Source of photochemically generated acid for microelectronic photoresists
Номер патента: CA2111632A1
Опубликовано: 06-09-1994
Автор(ы): Thomas A. Koes
Принадлежит: Morton International LLC
Опубликовано: 06-09-1994
Автор(ы): Thomas A. Koes
Принадлежит: Morton International LLC
Реферат: A SOURCE OF PHOTOCHEMICALLY GENERATED ACID FOR MICROELECTRONIC PHOTORESISTS ABSTRACT A new photoacid generator having the formula Formula I wherein R = hydrogen, hydroxyl, or the -O-S (=O)2-Q moiety; R1 = CH2OS(=O)2-Q, or -NO2; R2 = CH2OS(=O)2-Q, or -NO2; R3 = lower alkyl or hydrogen; R4 = hydrogen, -CH2OS(=O)2-Q, or -NO2; R5 = hydrogen, -CH2OS(=O)2-Q, or -NO2; and Q is a diazonaphthoquinone moiety; with the proviso that R3 is lower alkyl when R2 and R4 are NO2, and with the proviso that R1 ? R2 and R4 ? R5. exhibits unprecedented sensitivity to actinic radiation. This compound is photochemically transformed from a non-acidic entity to photoproducts which contain both sulfonic and carboxylic acid functuional groups. The acid generator is effective with polymers having acid labile groups, converting them into alkaline-soluble polymers, and with polymers which do not have such acid labile groups. Positive or negative working photoresist compositions containing the new photoacid generator have unparalleled performance characteristics because of the increased acidity generated per quantum of light. A preferred photoacid generator is made by reacting 2,6-dimethylol-3,5-dinitro-p-alkyl phenol with a diazonaphthoquinone sulfonyl chloride.
Method for creating extreme ultraviolet irradiation and source of such irradiation used in lithography
Номер патента: RU2249926C2. Автор: Даниель БАБОНО,Реми МАРМОРЕ,Лоранс БОННЕ. Владелец: Коммиссариат А Л`Энержи Атомик. Дата публикации: 2005-04-10.