Method of making connecting parts of semi-conducting devices or the like.
Реферат: 1,217,293. Semi-conductor devices. SONY CORP. 25 March, 1969 [25 March, 1968], No. 15549/69. Heading H1K. A contact bump on a semi-conductor device is produced by securing a metal electrode to a surface of the device, forming a metal layer over the surface and over the electrode, the metal of the layer having an affinity for the metal electrode but not for the surface, forming a metal bump over the electrode, and heating to a temperature at which the metal layer fuses and is aggregated into the bump. As shown, a region 12 of a silicon IC is contacted by depositing a glass layer on an existing glass or silicon dioxide coating to form an insulating layer 13, photoetching to form a window 13a and depositing an electrode 14 comprising a layer 14a of aluminium coated with a layer 14b of titanium and a layer 14c of nickel, Fig. 2A. A layer 15 of tin is deposited over the surface of glass layer 13 and electrode 14, Fig. 2B. A metal mask is placed on the surface and lead is vapour deposited to form a contact bump 17<SP>1</SP> which is provided with a surface layer 18 of silver if desired, Fig. 2C. The mask is then removed and the arrangement is heated to melt layer 15 which aggregates into the contact bump 17 due to surface tension, Fig. 2D. The excess lead portions 17a<SP>1</SP> (Fig. 2C) which form round the contact bump due to the gap G between the mask and the device are simultaneously aggregated into the contact bump. Any excess tin remaining on the surface may be removed by coating with a flux, e.g. resin, and heating. The electrode 14 may comprise a single layer of A1.
Semi-conductive device and method of producing same
Номер патента: US2844770A. Автор: Jan Coenraad Van Vessem. Владелец: US Philips Corp. Дата публикации: 1958-07-22.