Method for self- supported transfer of a fine layer by pulsation after implantation or co-implantation
Номер патента: EP1678754A1
Опубликовано: 12-07-2006
Автор(ы): Aurelie Tauzin, Christelle Lagahe-Blanchard, Franck Fournel, Ian Cayrefourcq, Konstantin Bourdelle, Nguyet-Phuong Nguyen
Принадлежит: Commissariat a lEnergie Atomique CEA, Soitec SA
Опубликовано: 12-07-2006
Автор(ы): Aurelie Tauzin, Christelle Lagahe-Blanchard, Franck Fournel, Ian Cayrefourcq, Konstantin Bourdelle, Nguyet-Phuong Nguyen
Принадлежит: Commissariat a lEnergie Atomique CEA, Soitec SA
Реферат: The invention relates to a method for self-supported transfer of a fine layer, wherein: at least one species of ions is implanted in a source-substrate at a given depth in relation to the surface of the source-substrate according to a certain dosage; a stiffener, which is in intimate contact with the source-substrate, is applied; said source-substrate undergoes heat treatment at a given temperature during a given period of time in order to create an embrittled, buried area substantially at said given depth without causing the fine layer to become thermally detached; a controlled energy pulse is applied to the source-substrate in a temporally localized manner in order to cause self-supported detachment of a fine layer which is defined between the surface and the embrittled buried layer in relation to the rest of the source-substrate.
Method for forming a two-layered hard mask on top of a gate structure
Номер патента: US09607892B2. Автор: Chih-Sen Huang,Chih-Wei Yang,Yu-Cheng Tung,En-Chiuan Liou. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-28.