Standard cell circuits employing voltage rails electrically coupled to metal shunts for reducing or avoiding increases in voltage drop
Номер патента: EP3559992A1
Опубликовано: 30-10-2019
Автор(ы): Jeffrey Junhao XU, John Jianhong ZHU, Mustafa Badaroglu
Принадлежит: Qualcomm Inc
Опубликовано: 30-10-2019
Автор(ы): Jeffrey Junhao XU, John Jianhong ZHU, Mustafa Badaroglu
Принадлежит: Qualcomm Inc
Реферат: Standard cell circuits employing voltage rails electrically coupled to metal shunts for reducing or avoiding increases in voltage drop are disclosed. In one aspect, a standard cell circuit is provided that employs active devices that include corresponding gates disposed with a gate pitch. First and second voltage rails having a line width are disposed in a first metal layer. Employing the first and second voltage rails having substantially a same line width reduces the height of the standard cell circuit as compared to conventional standard cell circuits. Metal lines are disposed in a second metal layer with a metal pitch less than the gate pitch such that the number of metal lines exceeds the number of gates. Electrically coupling the first and second voltage rails to the metal shunts increases the conductive area of each voltage rail, which reduces a voltage drop across each voltage rail.
Standard cell circuits employing voltage rails electrically coupled to metal shunts for reducing or avoiding increases in voltage drop
Номер патента: WO2018118913A1. Автор: Mustafa Badaroglu,John Jianhong ZHU,Jeffrey Junhao XU. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2018-06-28.