Methods of processing semiconductor wafers having silicon carbide power devices thereon
Номер патента: EP1935007A1
Опубликовано: 25-06-2008
Автор(ы): Anant Agarwal, Matt Donofrio, Sei-Hyung Ryu
Принадлежит: Cree Inc
Опубликовано: 25-06-2008
Автор(ы): Anant Agarwal, Matt Donofrio, Sei-Hyung Ryu
Принадлежит: Cree Inc
Реферат: Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.
Method of grinding back surface of semiconductor wafer and semiconductor wafer grinding apparatus
Номер патента: SG131917A1. Автор: Tomoo Hayashi,Motoi Nezu. Владелец: Tokyo Seimitsu Co Ltd. Дата публикации: 2007-05-28.