Non-contact measurement of the dopant content of semiconductor layers
Номер патента: EP2567217A1
Опубликовано: 13-03-2013
Автор(ы): E. Michael Heaven, Gordon Matthew Deans, Kenneth Cadien, Stephen Warren Blaine
Принадлежит: Aurora Control Technologies Inc
Опубликовано: 13-03-2013
Автор(ы): E. Michael Heaven, Gordon Matthew Deans, Kenneth Cadien, Stephen Warren Blaine
Принадлежит: Aurora Control Technologies Inc
Реферат: A system and method of non-contact measurement of the dopant content of semiconductor material by reflecting infrared (IR) radiation off of the material and splitting the radiation into two beams, passing each beam through pass band filters of differing wavelength ranges, comparing the level of energy passed through each filter and calculating the dopant content by referencing a correlation curve made up of known wafer dopant content for that system.
Non-contact measurement of the dopant content of semiconductor layers
Номер патента: EP2567217A4. Автор: Kenneth Cadien,Gordon Matthew Deans,E Michael Heaven,Stephen Warren Blaine. Владелец: Aurora Control Technologies Inc. Дата публикации: 2016-03-09.