Composition and Method for Making Picocrystalline Artificial Borane Atoms
Номер патента: US20170076942A1
Опубликовано: 16-03-2017
Автор(ы): Patrick Curran
Принадлежит: Seminuclear Inc
Опубликовано: 16-03-2017
Автор(ы): Patrick Curran
Принадлежит: Seminuclear Inc
Реферат: Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of boron icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B 12 H w ) x Si y O z with 3≦w≦5, 2≦x≦4, 2≦y≦5 and 0≦z≦3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.
Non-spherical cavity electrophoretic displays and methods and materials for making the same
Номер патента: US7109968B2. Автор: Barrett Comiskey,Jonathan D. Albert. Владелец: E Ink Corp. Дата публикации: 2006-09-19.