Substrate components for packaging IC chips and electronic device packages of the same

Substrate components for packaging IC chips and electronic device packages are disclosed. A substrate component for packaging IC chips comprises: a glass core base with at least one conductive through via connecting a combination of metallization and dielectric structures on both an upper surface and a lower surface of the glass core base; and, tapered edges created at a peripheral region of the glass core base; wherein dielectric layers are disposed over the tapered edges at the peripheral region of the glass core base. In accordance with an embodiment of the invention, the dielectric layers have a substantial planar upper surface, a lower surface conformably interfaced with the tapered edges at peripheral region of the glass core base, and a steep cutting face with the tapered edges of the glass core base. Alternatively, the tapered edges at peripheral region of the glass core base are not covered by the dielectric layers, and an encapsulated material sealing the tapered edges at peripheral region of the glass core base.

Molding compound supported rdl for ic package

A molding compound supported redistribution layer (RDL) structure for an integrated circuit (IC) package is disclosed. A plurality of copper pillars is formed, a first redistribution layer (RDL1) is configured on a bottom side of the copper pillars. One of the embodiments shows a top side of the copper pillars is adaptive for being electrically coupled to a mother board. Another one embodiment shows a top side of the copper pillars is adaptive for being electrically coupled to a chip or chips. Still another one embodiment shows a second redistribution layer (RDL2) is configured on a top side of the copper pillars.

High density film for IC package

High density film for IC package

The present invention discloses a high density film for IC package. The process comprises: a redistribution layer is fabricated following IC design rule, with a plurality of bottom pad formed on bottom, and with a plurality of first top pad formed on top; wherein the density of the plurality of bottom pad is higher than the density of the plurality of first top pad; and a top redistribution layer is fabricated following PCB design rule, using the plurality of the first top pad as a starting point; with a plurality of second top pad formed on top; wherein a density of the plurality of first top pad is higher than a density of the plurality of second top pad.

Circuit board structure with embedded fine-pitch wires and fabrication method thereof

A formation method of circuit board structure is disclosed. The formation method comprises: forming an intermediate substrate having interconnections therein and circuit patterns on both upper and lower surfaces, wherein the interconnections electrically connect the upper and lower circuit patterns; forming an upper dielectric layer overlying the upper circuit patterns, wherein the upper dielectric layer has a plurality of trenches therein; forming conductive wires in the trenches using e-less plating; and forming at least one protective layer overlying the conductive wires using a surface finishing process. The circuit board structure features formation of embedded conductive wires in the dielectric layer so that a short circuit can be avoid.

Bonding film for signal communication between central chip and peripheral chips and fabricating method thereof

A bonding film has at least a left longitudinal branch, and a lower latitudinal branch; a first bonding area is configured in a first branch, and a second bonding area is configured in a second branch. A plurality of outer top metal pads and a plurality of inner top metal pads are exposed on a top surface within each bonding area. A central chip is configured in a central area of the bonding film and is electrically coupled to the inner top metal pad, and at least two peripheral chips are configured neighboring to the central chip and electrically coupled to the outer top metal pads. Each of the inner top metal pads is electrically coupled to a corresponding outer top metal pad through an embedded circuitry. The central chip communicates with the peripheral chips through the inner top metal pad, embedded circuitry, and outer top metal pad of the bonding film.