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Method and a device for determining a shifting parameter to be used by a telecommunication device for transferring symbols

Номер патента: US20120002629A1. Автор: Cristina Ciochina, Damien Castelain, David Mottier, Loic Brunel. Владелец: Mitsubishi Electric Corp. Дата публикации: 05-01-2012.
A method for determining a shifting parameter P to be used by a telecommunication device for mapping symbols on sub-carriers, the telecommunication device including at least two transmit antennas, the symbols being transferred through each antenna of the telecommunication device on at least an even number K, strictly greater than two, of sub-carriers allocated to the telecommunication device. The telecommunication device transfers on a first antenna on each sub-carrier ‘k’, a signal representing a symbol ‘X k ’ in the frequency domain. The telecommunication device transfers on a second antenna on each sub-carrier ‘k’, a signal representing a symbol ‘X′ k ’ derived from the signal transferred on the first transmit antenna, for each frequency k, by the formula X K secondAnt =ε(−1) k+1 X* (p-l-k)mod K . Sub-carriers grouped in at least two clusters are allocated to the telecommunication device, and the shifting parameter p is even and determined according to clusters of sub-carriers allocated to the telecommunication device.

Method for manufacturing silicon carbide semiconductor device

Номер патента: US20120009801A1. Автор: Masayuki Furuhashi, Masayuki Imaizumi, Toshikazu Tanioka. Владелец: Mitsubishi Electric Corp. Дата публикации: 12-01-2012.
In a silicon carbide MOSFET, interface state generated at an interface between a silicon carbide layer and a gate insulating film cannot be reduced sufficiently, and mobility of a carrier is decreased. To solve this problem, a silicon carbide semiconductor device according to this invention includes a substrate introduction step of introducing a substrate, which includes a silicon carbide layer on which a gate insulating film is formed, in a furnace, and a heating step of heating the furnace having the substrate introduced therein while introducing nitrogen monoxide and nitrogen therein, wherein, in the heating step, nitrogen is reacted to nitride an interface between the gate insulating film and the silicon carbide layer.

Hand dryer apparatus

Номер патента: US20120011739A1. Автор: Jun Nakamura. Владелец: Mitsubishi Electric Corp. Дата публикации: 19-01-2012.
A hand dryer apparatus includes a high-pressure airflow generator that generates a high pressure airflow, a control circuit that controls the high-pressure airflow generator, a power connecting unit that connects a commercial power source to the control circuit, a main body that forms a hull by housing the high-pressure airflow generator, the control circuit, and the power connecting unit, and nozzles that are formed in the main body and blows out the high pressure airflow created by the high-pressure airflow generator; further includes a panel composing a part of the main body and is detachable by a tool, and switching units that are housed in the main body and can switch a setting of the hand dryer apparatus, and enables access to the power connecting unit and the switching unit by removing the panel.

Plate heat exchanger and refrigeration air conditioner

Номер патента: US20120012291A1. Автор: Daisuke Ito, Satoru Yanachi, Takehiro Hayashi. Владелец: Mitsubishi Electric Corp. Дата публикации: 19-01-2012.
It is aimed to enhance the strength of a plate heat exchanger while maintaining the heat exchange capability of the plate heat exchanger. A plate heat exchanger 20 is configured with a plurality of stacked plates 2 and 3 . Each of the plates 2 and 3 includes at four corners thereof a first inlet hole 5 which acts as an inlet for a first fluid, a first outlet hole 6 which acts as an outlet for the first fluid, a second inlet hole 7 which acts as an inlet for a second fluid, and a second outlet hole 8 which acts as an outlet for the second fluid. Each of the plates 2 and 3 and an adjacent plate define therebetween a first flow path for passing the first fluid and a second flow path for passing the second fluid, so as to exchange heat between the first fluid and the second fluid. In each of the plates 2 and 3 , a longitudinal length L 1 is 4 or more times a lateral length L 2.

Semiconductor device

Номер патента: US20120012947A1. Автор: Hisao Kondo, Junichi Yamashita, Khalid Hassan Hussein, Shigeto Fujita. Владелец: Mitsubishi Electric Corp. Дата публикации: 19-01-2012.
A semiconductor device includes a gate pad, a gate wiring conductor connected to the gate pad, and a gate electrode formed under the gate pad and the gate wiring conductor. Portions of the gate electrode closer to the gate pad have a higher resistance per unit area than portions of the gate electrode farther away from the gate pad.

Electrostatic atomizing apparatus, appliance, air conditioner, and refrigerator

Номер патента: US20120017630A1. Автор: Hiroshi Nakashima, Katsumasa Sakamoto, Makoto Okabe, Masumi Handa, Reiji Morioka. Владелец: Mitsubishi Electric Corp. Дата публикации: 26-01-2012.
It is an object to provide an electrostatic atomizing apparatus which is simply structured, is easy to assemble, is low in cost, has clogging resistance against foreign matter, can be used for a long time, and is highly reliable, or a home electrical appliance such as a refrigerator, air conditioner, etc. including the electrostatic atomizing apparatus. A discharge electrode formed of foam metal, whereto water that attaches to a surface is supplied by capillary action, a counter electrode provided so as to be opposed to the discharge electrode, and a water supply means that is provided directly above the discharge electrode via a predetermined clearance, supplying water to the discharge electrode or the electrode holding part, are included.

Photovoltaic device and method for manufacturing the same

Номер патента: US20120017986A1. Автор: Mitsunori Nakatani. Владелец: Mitsubishi Electric Corp. Дата публикации: 26-01-2012.
The method includes: steps of forming an n-type diffusion layer having an n-type impurity diffused thereon at a first surface side of a p-type silicon substrate; forming a reflection prevention film on the n-type diffusion layer; forming a back-surface passivation film made of an SiONH film on a second surface of the silicon substrate; forming a paste material containing silver in a front-surface electrode shape on the reflection prevention film; forming a front surface electrode that is contacted to the n-type diffusion layer by sintering the silicon substrate; forming a paste material containing a metal in a back-surface electrode shape on the back-surface passivation film; and forming a back surface electrode by melting a metal in the paste material by irradiating laser light onto a forming position of the back surface electrode and by solidifying the molten metal.

Infrared sensor and air conditioner

Номер патента: US20120018639A1. Автор: Takashi Matsumoto, Toshiaki Yoshikawa. Владелец: Mitsubishi Electric Corp. Дата публикации: 26-01-2012.
In an infrared sensor 1 including a condenser lens 3 and a multi-element light-receiving unit 2 with a plurality of light-receiving elements 2 a to 2 h aligned therein on a straight line, a position of receiving an intensity distribution peak of infrared rays which have passed through the condenser lens 3 is deviated from the center position of the multi-element light-receiving unit 2 to a desired light-receiving element position. Especially when the infrared sensor 1 is included in an air conditioner, the position of receiving the intensity distribution peak of the infrared rays is set to the position of a light-receiving element used for detecting heat in a location far from the installment position of the air conditioner.

Noise canceller and noise cancellation program

Номер патента: US20120020489A1. Автор: Tomohiro Narita. Владелец: Mitsubishi Electric Corp. Дата публикации: 26-01-2012.
A directivity control unit 10 calculates a main beam signal with its directivity turned toward an object sound direction and a sub-beam signal with its blind spot turned toward the object sound direction from output signals of a plurality of microphones 2 and 3 through signal processing, and a frequency analyzing unit 20 converts them to spectra. A sound source decision unit 30 decides on whether a sound source is voice, stationary noise or unstationary noise from the spectra of the main beam signal and sub-beam signal and outputs as a sound source decision result, and calculates the average spectrum which is a statistic of noise for the main beam signal. An interfering sound removing unit 50 subtracts the average spectrum from the spectrum of the main beam signal to remove interfering sounds.

Motor, electric equipment, and method of manufacturing motor

Номер патента: US20120025746A1. Автор: Hiroki Aso, Hiroyuki Ishii, Mamoru Kawakubo, Mineo Yamamoto, Togo Yamazaki, Tomoyuki Hasegawa. Владелец: Mitsubishi Electric Corp. Дата публикации: 02-02-2012.
In a motor driven by a drive circuit such as an inverter, there is a problem that electric current flowing through a bearing causes electric corrosion, which impairs the durability of the bearing. A motor of the invention includes: a stator in which a winding is applied through an insulating part to a stator core formed by laminating a predetermined number of electromagnetic steel plates which have been punched into a predetermined shape; a rotor assembly in which a rotor and bearings and formed by rolling bearings are fitted to a shaft; a printed wiring board which is arranged at an end part of the stator in an axial direction and to which a drive circuit is mounted; a bracket imposed to at least the end part of the stator in the axial direction to which the printed wiring board is arranged; and a conductive sheet provided between the printed wiring board and the bracket.