09-01-2020 дата публикации
Номер: US20200013665A1
Принадлежит:
The present invention relates to a conductive porous ceramic substrate and a method of manufacturing the same, and more particularly to a conductive porous ceramic substrate, in which a porous ceramic substrate used as a chuck or stage for fixing a thin semiconductor wafer substrate or display substrate through vacuum adsorption is imparted with antistatic performance so as to prevent the generation of static electricity, and a method of manufacturing the same. 1. A method of manufacturing a conductive porous ceramic substrate , the method comprising:{'sub': 2', '3', '2', '3, 'preparing a mixed powder by adding a titanium oxide (TiO) powder with MnCOand CrOpowders and a graphite powder and performing mixing and drying;'}{'sub': 3', '2', '3', '2, 'compacting the mixed powder of MnCO, CrO, TiOand graphite in a die under pressure to afford a shaped body; and'}sintering the shaped body thus obtained at a temperature ranging from 1000° C. to 1300° C. in an ambient air atmosphere,{'sub': 2', '3', '2', '3', '3', '2', '3', '3', '2', '3', '2, 'wherein in the preparing the mixed powder, the TiOpowder, as a main material, is added with the MnCOand CrOpowders, in which the MnCOand CrOpowders are mixed at a molar ratio of 9:1 and the mixed MnCOand CrOpowders are added in an amount of 5 mol % to 15 mol % relative to the TiOpowder.'}2. The method of claim 1 , wherein the graphite powder is added in an amount of 5 wt % to 15 wt % based on a total amount of the mixed powder of MnCO claim 1 , CrOand TiO.3. A conductive porous ceramic substrate claim 1 , having a microstructure a surface of which is formed with pores by Mn- and Cr-doped TiOparticles and (Mn claim 1 ,Cr)TiOparticles adjacent to each other claim 1 , and having a volume resistance ranging from 10Ω·cm to 10Ω·cm.4. The conductive porous ceramic substrate of claim 3 , having a porosity ranging from 20% to 50%. The present application claims priority based on Korean Patent Application No. 10-2018-0078138, filed Jul. 5, 2018, ...
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