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Применить Всего найдено 3. Отображено 3.
07-01-2004 дата публикации

静电放电保护装置

Номер: CN0001466209A
Принадлежит:

This invention relates to a static discharge protection unit designed between a connecting pad coupling to a first potential, memory and second potential including multiple doped areas and an isolation component. The first second type of doped areas are formed on a first type base and coupled to the first potential, the second doped area forms on the first type base coupled to the second potential, the third second type doped area forms on the first type base. The second well zone forms between second doped areas for and third and the isolation components are designed between the second type doped areas of the second and third.

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01-09-2004 дата публикации

高压输入垫的静电放电保护装置及方法

Номер: CN0001525489A
Принадлежит:

The invention is a kind of electrostatic discharging protection device fro high voltage inputting pad. It includes an adjuster which is connected between the inputting pad and the back element, it forms the first protection ring and the second protection ring around the adjuster, it forms the third protection ring around the back element, the first protection ring control circuit and the second protection control circuit control the three protection rings, thus the protection device has a higher igniting voltage and maintaining voltage in the normal manipulation state of the protection device, and it has a lower igniting voltage and maintaining voltage in electrostatic discharging state.

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07-01-2004 дата публикации

双极性输入垫的静电放电保护装置及方法

Номер: CN0001466208A
Принадлежит:

A static protection device of a bipolar input pad and its method includes a triple-well constituting a silicon-control rectifier composed of a first conductive first zone, second conductive second zone and first conductive third zone, a first and second conductive earth-end connecting zone is formed in the first zone, a first and second conductive input terminal connecting zone is formed in the third zone. A second conductive bridge zone crosses the said second zone and extends to the first and third zones, the first, second and third form two back-to-back serial diode structures. During the positive (negative) polar static discharging, collapse happens to the zone between the bridge first (third) to trigger a silicon control rectifier eliminating residual diode between input pad and earth pad.

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