21-07-2023 дата публикации
Номер: CN116465929A
Принадлежит:
The invention belongs to the technical field of gas sensing, and particularly provides an improved graphene gas sensor based on a buried gate structure, which is used for solving the problem of poor gate control capability of a traditional graphene gas sensor with a back gate structure. According to the invention, the buried gate structure is provided, the gate metal layer is embedded in the rectangular groove of the silicon substrate layer, and aluminum oxide is introduced as the gate dielectric, so that the thickness of the gate dielectric can be greatly reduced, and the relative dielectric constant of the gate dielectric can be increased, thereby improving the gate control capability of the device; moreover, the buried gate structure realizes the patterning of the gate metal layer, ensures that the gate metal, the drain metal and the source metal have no overlapping part in the vertical direction, and effectively improves the reliability of the gas sensor; in addition, the buried gate ...
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