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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 3. Отображено 3.
21-07-2023 дата публикации

CSTBT with self-biased pMOS and manufacturing method thereof

Номер: CN116469763A
Автор: ZHU HAO, GUO JIANBIN, SUN QINGQING
Принадлежит:

The invention discloses a CSTBT with a self-biased pMOS and a manufacturing method of the CSTBT. The CSTBT with the self-biased pMOS sequentially comprises a metal collector, a P + collector region, an N-type field stop layer, an N-type drift region, an N-type doped carrier storage layer and a P well region from bottom to top, the trench gate and the deep groove emitting electrodes penetrate through the P well region and the N-type doped carrier storage layer, and the deep groove emitting electrodes are formed on the two sides of the trench gate; the P-type compensation layer is formed on the first side of the trench gate and the first side of the deep groove emitter respectively; the P-type buried layers are formed in peripheral regions of the bottoms of the trench gate and the deep groove emitter respectively; the N + emitter region and the P + emitter region are formed on the upper portion of the P well region and located between the trench gate and the deep groove emitter, and the P ...

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Номер записи: 1
04-07-2023 дата публикации

Carrier storage groove type bipolar transistor structure and manufacturing method thereof

Номер: CN116387154A
Автор: GUO JIANBIN, XU HANG, SHI YIQUN, YANG YAFEN, SUN QINGQING
Принадлежит:

The invention discloses a carrier storage groove type bipolar transistor structure and a manufacturing method thereof. A deep groove emitter is introduced on the basis of a traditional CSTBT device structure, and a P-type layer is formed below an N-type doped carrier storage layer and in a peripheral region of the bottom of a groove structure, so that the problems of too small breakdown voltage, large conduction power consumption, too high turn-off loss and the like of the traditional CSTBT device are effectively solved.

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Номер записи: 2
02-05-2023 дата публикации

UWB (ultra wide band) wireless upgrading method, UWB wireless upgrading device and electronic equipment

Номер: CN116056066A
Автор: SHANG WEIDONG, WANG LEI, CHEN WEI, NIU JINJIE, CHANG YANHUI, GUO JIANBIN, ZHANG HAOYU, GUO YUJIE
Принадлежит:

The invention provides an ultra wide band (UWB) wireless upgrading method, which comprises the following steps of: judging whether the current state is an upgrading state or not, and obtaining a poll positioning request packet according to a judgment result; the poll positioning request packet is sent to a target positioning substation of the target coal mine, so that the target positioning substation obtains a resp positioning response packet according to the poll positioning request packet and sends the resp positioning response packet to the identification card; receiving a resp positioning response packet sent by the target positioning substation; and according to the resp positioning response packet, obtaining a final positioning end packet and sending the final positioning end packet to the target positioning substation. Therefore, the invention provides a stable, reliable and efficient UWB wireless upgrading method, a remote wireless upgrading method is adopted, the method is not ...

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Номер записи: 3