04-04-2023 дата публикации
Номер: CN115910129A
Принадлежит:
The invention discloses a nonvolatile memory and an electronic device. The memory includes: a memory cell array; a plurality of word lines and a plurality of bit lines; an array of sense amplifiers (SA); the reference unit is used for generating reference current; a first current mirror circuit; the first current mirror circuit is used for mirroring an obtained reference current, converting the mirrored reference current into a first reference voltage, providing the first reference voltage to a first group of SA units of the SA array, and providing a mirrored current of the reference current to the second current mirror circuit; the second current mirror circuit is used for mirroring mirror current of the reference current and converting the mirror current into second reference voltage, the second reference voltage is provided for a second group of SA units of the SA array, and the distance between the second group of SA units and the reference unit is larger than that between the first ...
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