21-07-2023 дата публикации
Номер: CN116469955A
Принадлежит:
The invention relates to the field of research, development and application of nanometer semiconductor material photoelectric detectors and photoelectric memories, in particular to a photoelectric device light-operated diode and a manufacturing method thereof. The light-operated diode is composed of a hexagonal boron nitride (h-BN) protective layer, a graphene electrode, a molybdenum disulfide (MoS2) n-n-junction, an h-BN grating layer and a gate dielectric layer. On the basis of a light-operated diode taking MoS2n-n-junction and h-BN as a grating layer heterostructure, the current state can be converted from an off state to a rectification state under illumination, so that an external gating device is not needed during integration. Along with the increase of the thickness of the h-BN grating layer, the light-operated diode is changed into a multifunctional photoelectric memory from a single-function photoelectric detector. The photoelectric memory based on the light-operated diode has ...
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