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Применить Всего найдено 9. Отображено 7.
03-04-2014 дата публикации

HOT-CARRIER INJECTION RELIABILITY CHECKS BASED ON GATE VOLTAGE DEPENDENCY

Номер: US20140095126A1
Автор: Banoo Kausar, Bell David Averill, Weir Bonnie E.
Принадлежит: LSI Corporation

A method for checking for reliability problems includes measuring, for a MOS integrated circuit fabrication process, a dependence of a saturation current (I) degradation versus gate voltage (V). The saturation current (I) degradation versus drain voltage (V) is also measured for the MOS integrated circuit process. The measured data points of an amount of time until a threshold degradation occurs versus Vdivided by Vis fitted to a curve in order to determine a first expected lifetime equation that is based on V. A circuit having at least one MOS transistor that includes a first MOS transistor is simulated. Based on the results of this simulation, and the first expected lifetime equation, a first expected lifetime for the first MOS transistor is calculated. If the first expected lifetime is less than a lifetime limit, a warning message is generated. 1. A method for checking for reliability problems , comprising:{'sub': dsat', 'gs, 'measuring, for an MOS integrated circuit fabrication process, a dependence of a saturation current (I) degradation versus gate voltage (V);'}{'sub': dsat', 'ds, 'measuring, for the MOS integrated circuit fabrication process, a dependence of the saturation current (I) degradation versus drain voltage (V);'}{'sub': gs', 'ds', 'gs, 'fitting measured data points of an amount of time until a threshold degradation occurs to Vdivided by Vto determine a first expected lifetime equation that is based on V;'}simulating a circuit having at least one MOS transistor that includes a first MOS transistor;{'sub': 'gs', 'based on the results of the simulation of the circuit, and the first expected lifetime equation that is based on V, determining a first expected lifetime for the first MOS transistor;'}if the first expected lifetime for the first MOS transistor is less than a lifetime limit, generating a warning message.2. The method of claim 1 , further comprising:{'sub': gs', 'ds', 'gs', 'gs', 'gs, 'fitting the amount of time until the threshold ...

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Номер записи: 1
03-04-2014 дата публикации

HOT-CARRIER INJECTION RELIABILITY CHECKS BASED ON BIAS TEMPERATURE INSTABILITY - HOT CARRIER INJECTION INTERACTION

Номер: US20140095127A1
Автор: Bell David Averill, Weir Bonnie E.
Принадлежит: LSI Corporation

A method of adjusting an expected lifetime equation that includes measuring, for a MOS integrated circuit fabrication process, a first dependence of a saturation current (I) degradation versus gate voltage (V). This first dependence is indicative of Idegradation at least partially caused by hot carrier injection (HCI). A second dependence of the saturation current (I) degradation versus gate voltage (V) is also measured. This second dependence is indicative of Idegradation caused by bias temperature instability (BTI). An artificial HCI lifetime equation is determined. This artificial HCI lifetime equation is based on the second dependence subtracted from the first dependence. A circuit having at least one MOS transistor that includes a first MOS transistor is simulated. Based on the results of the simulation, and the artificial HCI lifetime equation, an Idegradation for the first MOS transistor is calculated. 1. A method of adjusting an expected lifetime equation , comprising:{'sub': dsat', 'gs', 'dsat, 'measuring, for a MOS integrated circuit fabrication process, a first dependence of a saturation current (I) degradation versus gate voltage (V), the first dependence indicative of Idegradation at least partially caused by hot carrier injection (HCI);'}{'sub': dsat', 'gs', 'dsat, 'measuring, for the MOS integrated circuit fabrication process, a second dependence of the saturation current (I) degradation versus gate voltage (V), the second dependence indicative of Idegradation caused by bias temperature instability (BTI);'}determining an artificial HCI lifetime equation that is based on the second dependence subtracted from the first dependence;simulating a circuit that includes a first MOS transistor;{'sub': 'dsat', 'based on the results of the simulation of the circuit, and the artificial HCI lifetime equation, determining an Idegradation for the first MOS transistor.'}2. The method of claim 1 , further comprising:based on the results of the simulation of the ...

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Номер записи: 2
03-04-2014 дата публикации

CHECKING FOR HIGH BACK-BIAS IN LONG GATE-LENGTH, HIGH TEMPERATURE CASES

Номер: US20140095138A1
Автор: Bell David Averill, Kuehne Stephen C., Weir Bonnie E.
Принадлежит: LSI Corporation

A method for checking for reliability problems includes simulating a circuit having at least one MOS transistor that includes a first MOS transistor. Based on the results of this simulation of the circuit, a gate-to-bulk voltage (V) for the first MOS transistor is calculated. A voltage limit based on the length of the channel of the first MOS transistor is selected. If Vis greater than the voltage limit, a warning message is generated. 1. A method for checking for reliability problems , comprising:simulating a circuit having at least one MOS transistor that includes a first MOS transistor;{'sub': 'gb', 'based on the results of the simulation of the circuit, determining a gate-to-bulk voltage (V) for the first MOS transistor;'}selecting a voltage limit based on the length of the channel of the first MOS transistor; and,{'sub': 'gb', 'if Vis greater than the voltage limit, generating a warning message.'}2. The method of claim 1 , further comprising:{'sub': 'gb', 'in response to Vbeing greater than the voltage limit, modifying a design of the circuit.'}3. The method of claim 1 , wherein the voltage limit selection is further based on a temperature parameter.4. The method of claim 1 , wherein the voltage limit is selected as a first voltage limit when the length of the channel of the first MOS transistor meets a first threshold and the voltage limit is selected as a second voltage limit when the length of the channel of the first MOS transistor does not meet the first threshold.5. The method of claim 1 , further comprising:{'sub': gb', 'gs', 'ds, 'calculating, based on the results of the simulation of the circuit, an expected lifetime of the first MOS transistor based on V, a temperature parameter, the length of the channel of the first MOS transistor, a determined gate-to-source voltage (V), and, a determined drain-to-source voltage (V).'}6. The method of claim 1 , wherein the voltage limit is selected from a plurality of voltage limits based on when the length of the ...

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Номер записи: 3
03-04-2014 дата публикации

HOT-CARRIER INJECTION RELIABILITY CHECKS BASED ON BACK BIAS EFFECT ON THRESHOLD VOLTAGE

Номер: US20140095139A1
Автор: Bell David Averill, Weir Bonnie E.
Принадлежит: LSI Corporation

A method for checking for reliability problems that includes simulating a circuit having at least one MOS transistor. The circuit includes at least a first MOS transistor. Based on the results of the simulation of the circuit, a bulk-to-source voltage (V) is calculated for the first MOS transistor. Based on the calculated Vfor the first MOS transistor, a threshold voltage (V) for the first MOS transistor is calculated. Based on the V, an effective Vfor the first MOS transistor is calculated. And, based on the effective V, a reliability indicator associated with the first MOS transistor is calculated. 1. A method for checking for reliability problems , comprising:simulating a circuit having at least one MOS transistor that includes a first MOS transistor;{'sub': 'bs', 'based on the results of the simulation of the circuit, determining a bulk-to-source voltage (V) for the first MOS transistor;'}{'sub': bs', 'th, 'based on said Vfor the first MOS transistor, determining a threshold voltage (V) for said first MOS transistor;'}{'sub': th', 'gs, 'based on said V, determine an effective Vfor said first MOS transistor; and,'}{'sub': 'gs', 'based on said effective V, calculating a reliability indicator of said first MOS transistor.'}2. The method of claim 1 , wherein said Vis further based on a drain-to-source voltage (V) determined based on the results of the simulation of the circuit.3. The method of claim 1 , further comprising:determining an expected lifetime of an integrated circuit based on the reliability indicator of said first MOS transistor.4. The method of claim 3 , wherein said Vis further based on a drain-to-source voltage (V) determined based on the results of the simulation of the circuit.5. The method of claim 1 , further comprising:{'sub': gb', 'gs', 'ds, 'determining an expected lifetime of the first MOS transistor based on V, a temperature parameter, the length of the channel of the first MOS transistor, V, and, V.'}6. The method of claim 5 , further ...

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Номер записи: 4
03-04-2014 дата публикации

Bias-temperature instability reliability checks based on gate voltage threshold for recovery

Номер: US20140095140A1
Автор: Bonnie E. Weir, Cynthia Lee, David Averill Bell, Kausar Banoo
Принадлежит: LSI Corp

A method of determining a saturation current degradation that includes measuring, for a MOS integrated circuit fabrication process, a first dependence of a saturation current (I dsat ) degradation with gate voltage (V gs ) at a level that causes I dsat degradation by bias temperature instability (BTI). A second dependence of the saturation current (I dsat ) recovery versus gate voltage (V gs ) is also measured for the MOS integrated circuit fabrication process. A recovery voltage threshold value is determined. The recovery voltage threshold value is indicative of V gs voltages below which BTI recovery occurs. A circuit having at least one MOS transistor that includes a first MOS transistor is simulated. Based on the results of the simulation, a BTI recovery factor is calculated based on an amount of time the V gs of the first MOS transistor is below the recovery voltage threshold value.

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Номер записи: 5
03-04-2014 дата публикации

Breaking up long-channel field effect transistor into smaller segments for reliability modeling

Номер: US20140096094A1
Автор: Bonnie E. Weir, David Averill Bell
Принадлежит: LSI Corp

A first MOS transistor has a channel length. Based on a parameter associated with the first MOS transistor, the first MOS transistor is selected to be simulated as at least a first transistor and a second transistor in series. The circuit is simulated with the first transistor and the second transistor in place of the first MOS transistor. Based on the results of the simulation, device degradations are calculated for the first transistor the second transistor. A degraded netlist is created. In the degraded netlist, the first transistor is degraded by a device degradation for the first transistor. The second transistor is degraded by a device degradation for the second transistor. The circuit is re-simulated with the first degraded transistor and the second degraded transistor in place of the first MOS transistor.

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Номер записи: 6
28-10-2014 дата публикации

Breaking up long-channel field effect transistor into smaller segments for reliability modeling

Номер: US8875070B2
Автор: Bonnie E. Weir, David Averill Bell
Принадлежит: LSI Corp

A first MOS transistor has a channel length. Based on a parameter associated with the first MOS transistor, the first MOS transistor is selected to be simulated as at least a first transistor and a second transistor in series. The circuit is simulated with the first transistor and the second transistor in place of the first MOS transistor. Based on the results of the simulation, device degradations are calculated for the first transistor the second transistor. A degraded netlist is created. In the degraded netlist, the first transistor is degraded by a device degradation for the first transistor. The second transistor is degraded by a device degradation for the second transistor. The circuit is re-simulated with the first degraded transistor and the second degraded transistor in place of the first MOS transistor.

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Номер записи: 7