THIO(DI)SILANES

A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (RRRCS)(RN)(Si—Si)XH(I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R, R, R, R, and X are as described herein. 1. A method of forming a silicon-containing film on a substrate , the method comprising: heating a thiodisilane according to formula (I){'br': None, 'sup': 1a', '1b', '1c', '2, 'sub': s', '2', 'n', 'x', 'h, '(RRRCS)(RN)(Si—Si)XH\u2003\u2003(I),'}wherein: subscript s is an integer from 1 to 6; subscript n is an integer from 0 to 5; subscript x is an integer from 0 to 5; subscript h is an integer from 0 to 5; with the proviso that sum s+n+x+h=6;each H, when present in formula (I), is independently bonded to the same or different one of the silicon atoms in formula (I);each X is a monovalent halogen atom F, Cl, I, or Br and, when present in formula (I), is independently bonded to the same or different one of the silicon atoms in formula (I);{'sup': 1a', '1b', '1c, 'wherein R, R, and Rare defined by limitation (a), (b), or (c){'sup': 1a', '1a', '1b', '1c, 'sub': 2', '20', '1', '20, '(a) at least one Rindependently is (C-C)alkyl or phenyl and each of any remaining R, R, and Rindependently is H or (C-C)hydrocarbyl; or'}{'sup': 1a', '1b', '1c', '1a', '1b', '1c, 'sub': 6', '20', '1', '20, '(b) there is at least one group RRRC that independently is a substituted or unsubstituted (C-C)aryl, and each of any remaining R, R, and Rindependently is H or (C-C)hydrocarbyl; or'}{'sup': 1a', '1b', '1c', '1', '1a', '1b', '1c', '11', '11', '1a', '1b', '1c, 'sub': 2', '3', '20', '1', '20, '(c) any two of R, R, and R(collectively Rgroups), in the same or different RRRC group, are bonded together to form a divalent group, —R—, wherein —R— is a CHor a (C-C)hydrocarbylene and each of any remaining ...

THIO(DI)SILANES

Thio(di)silanes comprising a thiosilane of formula (A): (RRRCS)(Si)XH(A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (RRRCS)(RN)(Si—Si)XH(I) wherein subscript s is from 1 to 6, and wherein R, R, R, R, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom. 1. A thiodisilane of formula (I):{'br': None, 'sup': 1a', '1b', '1c', '2, 'sub': s', '2', 'n', 'x', 'h, '(RRRCS)(RN)(Si—Si)XH\u2003\u2003(I),'}wherein:subscript s is an integer from 1 to 6;subscript n is an integer from 0 to 5;subscript x is an integer from 0 to 5;subscript h is an integer from 0 to 5;with the proviso that sum s+n+x+h=6;each H, when present in formula (I) (i.e., when subscript h is 1 to 5), is independently bonded to the same or different one of the silicon atoms in formula (I);each X is a monovalent halogen atom F, Cl, I, or Br and, when present in formula (I) is independently bonded to the same or different one of the silicon atoms in formula (I);{'sup': 1a', '1b', '1c, 'wherein R, R, and Rare defined by limitation (a), (b), or (c){'sup': 1a', '1a', '1b', '1c, 'sub': 2', '20', '1', '20, '(a) at least one Rindependently is (C-C)alkyl or phenyl and each of any remaining R, R, and Rindependently is H or (C-C)hydrocarbyl; or'}{'sup': 1a', '1b', '1c', '1a', '1b', '1c, 'sub': 6', '20', '1', '20, '(b) there is at least one group RRRC that independently is a substituted or unsubstituted (C-C)aryl and each of any remaining R, R, and Rindependently is H or (C-C)hydrocarbyl; or'}{'sup': 1a', '1b', '1c', '1', '1a', '1b', '1c', '11', '11', '1a', '1b', '1c, 'sub': 2', '3', '20', '1', '20, '(c) any two of R, R, and R(collectively Rgroups), in the same or different RRRC group, are bonded together to form a divalent group, —R—, wherein —R— is a CHor a (C-C)hydrocarbylene and each of any remaining R, R, and Rindependently is H or (C-C)hydrocarbyl ...

AMINOCHLOROHYDRIDODISILANES

Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising a compound which is a disilane and which comprises at least one chloro group, at least one dialkylamino group and at least one hydrido group. A composition for film forming is also disclosed, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, a nitrogen precursor, and an oxygen precursor. Further disclosed is a process of synthesizing the Silicon Precursor Compound; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound; the silicon-containing film formed thereby; and a method of forming the Silicon Precursor Compound. 1. A compound which is a disilane and which comprises at least one chloro group , at least one dialkylamino group and at least one hydrido group.2. The compound of claim 1 , in which the compound has the formula:{'br': None, 'sup': 1', '2', '1', '2, 'sub': a', 'b', 'c', 'd', 'e', 'f, '(RRN)ClHSiSiHCl(RRN);'}{'sup': 1', '2', '1', '2', '1a', '2a', '1a', '2a, 'sub': 1', '6', '3', '6', '2', '6', '2', '6', '1', '6', '3', '6', '2', '6', '2', '6', '2', '5, 'wherein each Rindependently is H, (C-C)alkyl, (C-C)cycloalkyl, (C-C)alkenyl, (C-C)alkynyl, or phenyl; and each Rindependently is (C-C)alkyl, (C-C)cycloalkyl, (C-C)alkenyl, (C-C)alkynyl, or phenyl; or Rand Ron a same or different nitrogen atom are bonded together to be —R-R— wherein —R-R— is (C-C)alkylene; and'}wherein a, b, c, d, e and f are integers which range independently from zero to three; provided that at least one of a and f is not zero, at least one of b and e is not zero, and at least one of c and d is not zero.3. The compound of claim 2 , including one or more of limitations a) claim 2 , b) claim 2 , c) and d):{'sup': 1', '2, 'sub': 2', '6, 'a) Rand Rindependently are C-Calkyl;'}b) only one of a and f is one, and the other is zero;c) b and e independently are zero, one or ...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING FORMING A DIELECTRIC LAYER ON A STRUCTURE HAVING A HEIGHT DIFFERENCE USING ALD

A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

LIQUID COMPOSITION HAVING AMMONIA BORANE AND DECOMPOSING TO FORM HYDROGEN AND LIQUID REACTION PRODUCT

Liquid compositions of ammonia borane and a suitably chosen amine borane material were prepared and subjected to conditions suitable for their thermal decomposition in a closed system that resulted in hydrogen and a liquid reaction product. 1. A liquid composition comprising ammonia borane and a suitably chosen amine-borane material such that said liquid composition undergoes thermal decomposition to form hydrogen (H) and a liquid reaction product.2. The composition of claim 1 , wherein the liquid composition is neat.3. The composition of claim 1 , wherein the suitably chosen amine-borane material comprises an alkylamine-borane.4. The composition of claim 1 , wherein the suitably chosen amine-borane material comprises n-hexylamine-borane.5. The composition of claim 1 , wherein the suitably chosen amine-borane material comprises an ionic liquid.6. The liquid reaction product of claim 1 , wherein the suitable amine-borane material comprises methoxypropylamine-borane.7. A process for forming hydrogen claim 1 , comprising:Providing a liquid composition comprising ammonia borane and a suitably chosen amine-borane material such that said liquid composition undergoes thermal decomposition to form hydrogen and a liquid reaction product, andsubjecting the liquid composition to conditions suitable for thermal decomposition of the liquid composition to form hydrogen and a liquid reaction product.8. The process of claim 7 , wherein the liquid composition is neat.9. The process of claim 7 , wherein the suitably chosen amine-borane material comprises an alkylamine-borane.10. The process of claim 7 , wherein the suitably chosen amine-borane material comprises n-hexylamine-borane.11. The process of claim 7 , wherein the suitably chosen amine-borane material comprises an ionic liquid.12. The process of claim 7 , wherein the suitably chosen amine-borane material comprises methoxypropylamine-borane. This application claims the benefit of U.S. Provisional Application 61/615,650, filed ...

Aminochlorohydridodisilanes

Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising a compound which is a disilane and which comprises at least one chloro group, at least one dialkylamino group and at least one hydrido group; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a process of synthesizing the Silicon Precursor Compound; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound; the silicon-containing film formed thereby; and a method of forming the Silicon Precursor Compound.

Process of synthesizing diisopropylaminw-disilanes

Chemical processes comprise selectively synthesizing diisopropylamino-disilanes and reduction of chloride in aminosilanes, and the compositions comprise the diisopropylamino- disilanes and at least one reaction by-product prepared thereby. The diisopropylamino- disilanes are diisopropylamino-pentachlorodisilane and diisopropylamino-disilane.

Monoaminosilane compounds

Thio(di)silanes

A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (R 1a R 1b R 1c CS) s (R 2 2 N) n (Si—Si)X x H h (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R 1a , R 1b , R 1c , R 2 2 , and X are as described herein.

Thio(di)silanes

A method of forming a film on a substrate, the method comprising: heating a thiodisilane according to formula (I) (R 1a R 1b R 1c CS) s (R 2 2 N) n (Si-Si)X x H h (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscripts s, n, x, h and R 1a , R 1b , R 1c , R 2 2 , and X are as described herein.