METHOD AND STRUCTURE FOR REDUCING PRIOR LEVEL EDGE INTERFERENCE WITH CRITICAL DIMENSION MEASUREMENT

A method for reducing edge effect interference with critical dimension (CD) measurement of semiconductor via structures includes forming a test structure in a kerf region of a semiconductor wafer, the test structure including at least a via structure and a trench structure in contact with the via structure. The via structure is formed in accordance with a critical dimension associated with a corresponding via structure in a circuit region of the semiconductor wafer, and the trench structure is formed in accordance with a widened dimension with respect to a minimum ground rule dimension associated with a corresponding trench structure in a circuit region of the semiconductor wafer.

Metrology tool error log analysis methodology and system

A method of identifying failures in a metrology tool system used to measure desired dimensions in microelectronic features. Each metrology tool in the system runs a plurality of recipes for measuring desired dimensions in microelectronic features, with each recipe comprising a set of instructions for measuring at least one dimension in a microelectronic feature. The system includes an error log having stored thereon failures in measurement of microelectronic feature dimensions. The method includes determining normalized number of errors for the recipes used by the metrology tool from the failures stored in the error log, identifying one or more recipes having the greatest normalized number of errors in the error log, identifying, in a list of jobs to be performed by the metrology tool, the one or more identified recipes having the greatest normalized number of errors, and from the identified one or more recipes having the greatest normalized number of errors, determining the cause of the ...

Structure, system and method for dimensionally unstable layer dimension measurement

A structure, a system and a method are directed towards determination of a dimension of a patterned dimensionally unstable layer when the dimension is measured using an apparatus that induces a variation of the dimension. The structure, system and method use a patterned dimensionally unstable layer pattern design that correlates with an algorithm used to determine the dimension when the dimension is measured using the apparatus that induces the variation of the dimension.

METROLOGY TOOL RECIPE VALIDATOR USING BEST KNOWN METHODS

A method of preparing recipes for operating a metrology tool, each recipe including a set of instructions for measuring dimensions in a microelectronic feature. A database includes a plurality of known instructions with best known methods for measuring different feature dimensions by creating a summary of a recipes used by the tool, and adding categorization attributes to identify the summary for retrieval from the database. There is provided a desired recipe having instructions for measuring desired dimensions, including a summary of parameters relating to tool function for the feature dimension to be measured. The method includes comparing the instructions in the desired recipe with the instructions in the database, identifying differences there between, modifying the desired recipe instructions to conform to the database instructions, verifying the desired recipe prior to using the modified desired recipe by the tool, and using the desired recipe to execute a feature measurement on the ...

Apparatus and method for characterizing features at small dimensions

Prediction of a functional characteristic(s) and/or description of a physical characteristic(s) of structural features on a substrate is performed using a method where a combination of a weighting function(s) and a correlation function(s) is applied to feedback information from the structural feature. The combination of functions is preferably selected using a calibration database containing (A) information describing a functional performance characteristic of reference structural features, and/or (B) information describing a physical characteristic of reference structural features, and information describing feedback from the reference structural features as a function of position over such reference structural features.

Determining fleet matching problem and root cause issue for measurement system

Methods, systems and program products are disclosed for determining whether a measurement system under test (MSUT) matches a fleet including at least one other measurement system. The invention implements realistic parameters for analyzing a matching problem including single tool precision, tool-to-tool non-linearities and tool-to-tool offsets. A bottom-line tool matching precision metric that combines these parameters into a single value is then implemented. The invention also includes methods for determining a root cause of a matching problem, and for determining a fleet measurement precision metric.

MEASUREMENT SYSTEM OPTIMIZATION

Optimizing a measurement system under test (MSUT) is disclosed. In one embodiment, a method includes selecting a first set of adjustable parameters of the MSUT that affect a quality metric for the MSUT, calculating the quality metric over a range of values of each adjustable parameter in the first set of adjustable parameters, generating a first multidimensional response space based on the calculating step, and determining which value of each adjustable parameter optimizes the quality metric based on the first multidimensional response space. The multidimensional response space may be stored for later recall for other optimization exercises.

DETERMINING FLEET MATCHING PROBLEM AND ROOT CAUSE ISSUE FOR MEASUREMENT SYSTEM

Methods, systems and program products are disclosed for determining whether a measurement system under test (MSUT) matches a fleet including at least one other measurement system. The invention implements realistic parameters for analyzing a matching problem including single tool precision, tool-to-tool non-linearities and tool-to-tool offsets. A bottom-line tool matching precision metric that combines these parameters into a single value is then implemented. The invention also includes methods for determining a root cause of a matching problem, and for determining a fleet measurement precision metric.

Method for monitoring lateral encroachment of spacer process on a CD SEM

A process implementing steps for determining encroachment of a spacer structure in a semiconductor device having thick and thin spacer regions, including a transition region formed therebetween. The method steps comprise: obtaining a line width roughness (LWR) measurement at at least one location along each thick, thin and transition spacer regions; determining a threshold LWR measurement value based on the LWR measurements; defining a region of interest (ROI) and obtaining a further LWR measurement in the ROI; comparing the LWR measurement in the ROI against the threshold LWR measurement value; and, notifying a user that either encroachment of the spacer structure is present when the LWR measurement in the ROI is below the threshold LWR measurement value, or that no encroachment of the spacer structure is present when the LWR measurement in the ROI is above the threshold LWR measurement value.

Method for monitoring lateral encroachment of spacer process on a CD SEM

A process implementing steps for determining encroachment of a spacer structure in a semiconductor device having thick and thin spacer regions, including a transition region formed therebetween. The method steps comprise: obtaining a line width roughness (LWR) measurement at at least one location along each thick, thin and transition spacer regions; determining a threshold LWR measurement value based on the LWR measurements; defining a region of interest (ROI) and obtaining a further LWR measurement in the ROI; comparing the LWR measurement in the ROI against the threshold LWR measurement value; and, notifying a user that either encroachment of the spacer structure is present when the LWR measurement in the ROI is below the threshold LWR measurement value, or that no encroachment of the spacer structure is present when the LWR measurement in the ROI is above the threshold LWR measurement value.

AUTOMATED DYNAMIC METROLOGY SAMPLING SYSTEM ADN METHOD FOR PROCESS CONTROL

A system and method for optimizing and implementing a metrology sampling plan. A system is provided that includes a system for collecting historical metrology data from a metrology tool; and a reduction analysis system that compares an initial capability calculated from the historical metrology data with a recalculated capability for a reduced data set, wherein the reduced data set is obtained by removing a subset of data from the historical metrology data.

Measurement Tool Monitoring Using Fleet Measurement Precision and Tool Matching Precision Analysis

A method for monitoring a fleet comprising a plurality of measurement tools includes collecting data for a current time interval from the fleet by a data collection module; and performing fleet measurement precision (FMP)/tool matching precision (TMP) analysis on the collected data by a FMP/TMP analysis module, wherein FMP/TMP analysis comprises determining a TMP for each of the plurality of measurement tools using a static and a dynamic benchmark measuring system (BMS); and determining a FMP for the fleet using the static and the dynamic BMS; and determining if the FMP is above a predetermined threshold by a fleet improvement module, and in the event the FMP is above the predetermined threshold, identifying at least one tool of the plurality of tools as poorly performing based on the TMPs; and flagging the identified at least one tool for improvement.

Determining root cause of matching problem and/or fleet measurement precision problem for measurement system

Methods, systems and program products are disclosed for determining whether a measurement system under test (MSUT) matches a fleet including at least one other measurement system. The invention implements realistic parameters for analyzing a matching problem including single tool precision, tool-to-tool non-linearities and tool-to-tool offsets. A bottom-line tool matching precision metric that combines these parameters into a single value is then implemented. The invention also includes methods for determining a root cause issue of a matching problem, and for determining a fleet measurement precision metric. Method, system and program product are also disclosed for attempting to determine a root cause of a subject problem related to at least one of a measurement system under test (MSUT) and a fleet of at least one other measurement system.

METROLOGY TOOL RECIPE VALIDATOR USING BEST KNOWN METHODS

A method of preparing recipes for operating a metrology tool, wherein each recipe comprises a set of instructions for measuring at least one dimension in a microelectronic feature. A database includes a plurality of known instructions with best known methods for measuring different dimensions in a microelectronic feature by creating a summary of a recipes used by the metrology tool, and adding to the summary categorization attributes to identify the recipe summary for retrieval from the database. There is provided a desired recipe having instructions for measuring one or more desired dimensions, the desired recipe or portion thereof including a summary of parameters relating to metrology tool function with respect to the microelectronic feature dimension to be measured. The method includes comparing the instructions in the desired recipe with the instructions in the database, identifying differences between the instructions in the desired recipe and the instructions in the database, modifying the instructions in the desired recipe to conform to the instructions in the database, Verifying the desired recipe prior to using the modified desired recipe by the metrology tool, and using the desired recipe to execute a microelectronic feature measurement on the metrology tool.

Measurement tool monitoring using fleet measurement precision and tool matching precision analysis

A method for monitoring a fleet comprising a plurality of measurement tools includes collecting data for a current time interval from the fleet by a data collection module; and performing fleet measurement precision (FMP)/tool matching precision (TMP) analysis on the collected data by a FMP/TMP analysis module, wherein FMP/TMP analysis comprises determining a TMP for each of the plurality of measurement tools using a static and a dynamic benchmark measuring system (BMS); and determining a FMP for the fleet using the static and the dynamic BMS; and determining if the FMP is above a predetermined threshold by a fleet improvement module, and in the event the FMP is above the predetermined threshold, identifying at least one tool of the plurality of tools as poorly performing based on the TMPs; and flagging the identified at least one tool for improvement.

Methods and Systems Involving Measuring Complex Dimensions of Silicon Devices

A method for measuring a dimension of a device includes receiving an image of a portion of the device, receiving a first offset value and a second offset value, processing the image to define a least one graph of a line of pixels, the at least one graph including the brightness level of each pixel in a line of pixels, identifying a location of a first peak and a second peak in the graph, defining a first exclusion area boundary, defining a second exclusion area boundary, setting the brightness level of the pixels between the first exclusion area boundary and the second exclusion area boundary to zero, identifying a first portion of the feature of interest and a second portion of the feature of interest, and measuring a distance between the first portion of the feature of interest and the second portion of the feature of interest. 1. A method for measuring a dimension of a device , the method including:receiving an image of a portion of the device, the image including lines of pixels, each pixel having a brightness level;receiving a first offset value associated with the image and a second offset value associated with the image;processing the image to define a least one graph of a line of pixels, the at least one graph including the brightness level of each pixel in a line of pixels;identifying a location of a first peak in the graph;identifying a location of a second peak in the graph;defining a first exclusion area boundary as a function of the location of the first peak in the graph and the first offset value;defining a second exclusion area boundary as a function of the location of the second peak in the graph and the second offset value;setting the brightness level of the pixels between the first exclusion area boundary and the second exclusion area boundary to zero;identifying a first portion of the feature of interest at least partially defined by the first peak and a second portion of the feature of interest at least partially defined by the second peak; ...

Sem repair for sub-optimal features

A method and system for repairing photomasks is disclosed. A scanning electron microscope (SEM) is used to identify, measure, and correct defects. The SEM is operated in multiple modes, including a measuring mode and a repair mode. The repair mode is of higher landing energy and exposure time than the measuring mode, and induces shrinkage in the photoresist to correct various features, such as vias that are too small.

Metrology Management

A method for managing a metrology system includes receiving a part, identifying, with a processing device, a part type associated with the part, retrieving, with the processing device, test rule logic associated with the part type from a database, retrieving, with the processing device, measurement data associated with the identified part type, processing, with the processing device, the measurement data, applying, with the processing device, the test rule logic to the processed measurement data to determine whether the part should be measured, outputting the part responsive to determining that the part should not be measured, and incrementing, with the processing device, a counter and saving a value of the counter in the database responsive to outputting the part responsive to determining that the part should not be measured. 1. A method for managing a metrology system , the method comprising:receiving a part;identifying, with a processing device, a part type associated with the part;retrieving, with the processing device, test rule logic associated with the part type from a database;retrieving, with the processing device, measurement data associated with the identified part type;processing, with the processing device, the measurement data;applying, with the processing device, the test rule logic to the processed measurement data to determine whether the part should be measured;outputting the part responsive to determining that the part should not be measured; andincrementing, with the processing device, a counter and saving a value of the counter in the database responsive to outputting the part responsive to determining that the part should not be measured.2. The method of claim 1 , further comprising:measuring the part responsive to determining that the part should be measured;outputting measured data to the database; andoutputting the part.3. The method of claim 1 , further comprising:counting a number of parts of the identified part type that have been ...

Charged beam apparatus and method that provide charged beam aerial dimensional map

A charged beam apparatus, such as an electron microscopy apparatus, and a method for determining an aerial dimensional map of a charged beam within the charged beam apparatus, each use a test structure that includes a feature located upon a substrate. One of the feature and the substrate is conductive and the other of the feature and the structure is non conductive. The charged beam within the charged beam apparatus is scanned in a plurality of non-parallel linear directions with respect to the substrate and the feature to provide a corresponding plurality of current versus position response curves from which may be determined the aerial dimensional map of the charged beam within the charged beam apparatus.

Determining fleet matching problem and root cause issue for measurement system

Methods, systems and program products are disclosed for determining whether a measurement system under test (MSUT) matches a fleet including at least one other measurement system. The invention implements realistic parameters for analyzing a matching problem including single tool precision, tool-to-tool non-linearities and tool-to-tool offsets. A bottom-line tool matching precision metric that combines these parameters into a single value is then implemented. The invention also includes methods for determining a root cause of a matching problem, and for determining a fleet measurement precision metric.

A method for measuring and reducing angular deviations of a charged particle beam

Determining fleet matching problem and root cause issue for measurement system

Determining fleet matching problem and root cause issue for measurement system

Methods, systems and program products are disclosed for determining whether a measurement system under test (MSUT) matches a fleet including at least one other measurement system. The invention implements realistic parameters for analyzing a matching problem including single tool precision, tool-to-tool non-linearities and tool-to-tool offsets. A bottom-line tool matching precision metric that combines these parameters into a single value is then implemented. The invention also includes methods for determining a root cause of a matching problem (sl0), and for determining a fleet measurement precision metric (s4).

A method for measuring and reducing angular deviations of a charged particle beam

The invention provides a system and method for determining an angular deviation of a charged particle beam and for calibrating a charged particle beam system that are based upon multiple measurements of a test object that include sidewalls of high sidewall angle uniformity. A path of a charged particle beam is controlled by multiple beam control parameters. The method determines the parameters that will substantially reduce the angular deviation and applies them in order to calibrate a charged particle beam system.

A method for measuring and reducing angular deviations of a charged particle beam

Determining fleet matching problem and root cause issue for measurement system

Methods, systems and program products are disclosed for determining whether a measurement system under test (MSUT) matches a fleet including at least one other measurement system. The invention implements realistic parameters for analyzing a matching problem including single tool precision, tool-to-tool non-linearities and tool-to-tool offsets. A bottom-line tool matching precision metric that combines these parameters into a single value is then implemented. The invention also includes methods for determining a root cause of a matching problem (sl0), and for determining a fleet measurement precision metric (s4).

超小型電子機構の所望寸法を測定するのに用いられる計測ツールにおける障害を識別する方法、該寸法を測定するのに用いられる計測ツールシステムにおける障害を識別する方法、及び、該システムにおける障害を識別するコンピュータプログラム（計測ツールエラーログ解析方法及びシステム）

【課題】超小型電子機構の所望寸法を測定するのに用いられる計測ツールシステムの障害を識別する方法を提供する。 【解決手段】システムの各計測ツールは超小型電子機構の所望寸法を測定するため、複数のレシピを実行し、各レシピは、超小型電子機構の少なくとも１つの寸法を測定するために一連の命令を含む。システムは、超小型電子機構寸法の測定の際に障害を記憶するエラーログを含む。方法は、計測ツールにより用いられたレシピに対して、正規化された数のエラーを、エラーログに記憶されている障害から決定する工程と、エラーログ内の最大の正規化された数のエラーを有する１つ以上のレシピを識別する工程と、最大の正規化された数のエラーを有する１つ以上の識別されたレシピを、測定ツールにより実行すべきジョブのリストにて識別する工程と、最大の正規化された数のエラーを有する１つ以上の識別されたレシピから１つ以上のレシピのエラーの原因を決定する工程とを含む。 【選択図】図２

Structure, system and method for dimensionally unstable layer dimension measurement

A structure, a system and a method are directed towards determination of a dimension of a patterned dimensionally unstable layer when the dimension is measured using an apparatus that induces a variation of the dimension. The structure, system and method use a patterned dimensionally unstable layer pattern design that correlates with an algorithm used to determine the dimension when the dimension is measured using the apparatus that induces the variation of the dimension.

Quantification of adsorbed molecular contaminant using thin film measurement

A test method for measuring adsorbed molecular contamination uses a test structure that includes a substrate comprising a plurality of separated test sites having a plurality separate thicknesses having a base design thickness and a designed thickness interrelationship. The test structure is exposed to a molecular contaminant environment to provide an adsorbed molecular contaminant layer upon each of the plurality of separated test sites. The plurality of separated test sites with the adsorbed molecular contaminant layer thereon is measured. An appropriate algorithm that considers the designed thickness interrelationship is used to determine at least one of: (1) the base design thickness; and (2) a thickness of the adsorbed molecular contaminant layer.

Quantification of adsorbed molecular contaminant using thin film measurement

A test method for measuring adsorbed molecular contamination uses a test structure that includes a substrate comprising a plurality of separated test sites having a plurality separate thicknesses having a base design thickness and a designed thickness interrelationship. The test structure is exposed to a molecular contaminant environment to provide an adsorbed molecular contaminant layer upon each of the plurality of separated test sites. The plurality of separated test sites with the adsorbed molecular contaminant layer thereon is measured. An appropriate algorithm that considers the designed thickness interrelationship is used to determine at least one of: (1) the base design thickness; and (2) a thickness of the adsorbed molecular contaminant layer.

Method for monitoring lateral encroachment of spacer process on a CD SEM

A process implementing steps for determining encroachment of a spacer structure in a semiconductor device having thick and thin spacer regions, including a transition region formed therebetween. The method steps comprise: obtaining a line width roughness (LWR) measurement at at least one location along each thick, thin and transition spacer regions; determining a threshold LWR measurement value based on the LWR measurements; defining a region of interest (ROI) and obtaining a further LWR measurement in the ROI; comparing the LWR measurement in the ROI against the threshold LWR measurement value; and, notifying a user that either encroachment of the spacer structure is present when the LWR measurement in the ROI is below the threshold LWR measurement value, or that no encroachment of the spacer structure is present when the LWR measurement in the ROI is above the threshold LWR measurement value.

Sem repair for sub-optimal features

A method and system for repairing photomasks is disclosed. A scanning electron microscope (SEM) is used to identify, measure, and correct defects. The SEM is operated in multiple modes, including a measuring mode and a repair mode. The repair mode is of higher landing energy and exposure time than the measuring mode, and induces shrinkage in the photoresist to correct various features, such as vias that are too small.

Metrology management

A method for managing a metrology system includes receiving a part, identifying, with a processing device, a part type associated with the part, retrieving, with the processing device, test rule logic associated with the part type from a database, retrieving, with the processing device, measurement data associated with the identified part type, processing, with the processing device, the measurement data, applying, with the processing device, the test rule logic to the processed measurement data to determine whether the part should be measured, outputting the part responsive to determining that the part should not be measured, and incrementing, with the processing device, a counter and saving a value of the counter in the database responsive to outputting the part responsive to determining that the part should not be measured.