RETICLE CHUCK CLEANER AND RETICLE CHUCK CLEANING METHOD

As a reticle chuck cleaner enabling easy cleaning of a reticle chuck in a vacuum chamber of an EUV exposure device without exposing the interior of the vacuum chamber to the atmosphere, and which can help improve the operating ratio of the EUV exposure device, provided is a reticle chuck cleaner (A) for cleaning a reticle chuck in an EUV exposure device, said reticle chuck cleaner (A) being provided with an adhesive layer (1) to be applied to a chuck area of a reticle chuck, a support layer (2) laminated adjacent to the adhesive layer (1), and a substrate (3) having a shape enabling transport to the reticle chuck. The support layer (2) is partially bonded to the substrate (3) via bonding areas (41) of a partial adhesion layer (4).

Mask inspection apparatus and mask inspection method

According to one embodiment, a mask inspection apparatus includes a decompression chamber, a holder, a light irradiation unit, a detection unit, an electrode, and a control unit. The holder is provided in the decompression chamber and holds a mask. The light irradiation unit irradiates a major surface of the mask held by the holder with a light. The detection unit is provided in the decompression chamber to detect electrons generated when the major surface of the mask is irradiated with the light. The electrode is provided between the holder and the detection unit and guides the electrons in a direction from the holder toward the detection unit. The control unit compares a detection result of the electrons detected by the detection unit with a reference value.

TEMPLATE SUBSTRATE AND METHOD FOR MANUFACTURING SAME

According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An impurity is introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region. The mask film is provided on the upper surface of the substrate. 1. A template substrate , comprising:a substrate including a mesa region formed in a central portion of an upper surface of the substrate, the mesa region being configured to protrude more than a region of the substrate around the mesa region, an impurity being introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region; anda mask film provided on the upper surface of the substrate.2. The template substrate according to claim 1 , wherein the partial region includes a region where an alignment mark is to be formed.3. The template substrate according to claim 2 , wherein a concentration profile along a vertical direction of the impurity of the partial region has a maximum value at a position higher than a position where a bottom surface of the alignment mark is to be formed.4. The template substrate according to claim 1 , wherein:a configuration of the mesa region is a rectangle as viewed from above; andthe partial region is disposed at least at each corner of the mesa region.5. A method for manufacturing a template substrate claim 1 , comprising:setting an impurity implantation region including a region where an alignment mark is to be formed in a substrate based on information of the alignment mark, the substrate including a mesa region in a central portion of an upper surface of the substrate, the mesa region being configured to protrude more than a region of the substrate around the mesa region;designating a position of the impurity implantation region of the ...

Mask Manufacturing Device

According to one embodiment, a mask manufacturing device includes a positional-deviation calculating unit that acquires positional deviation information between an actual position of a pattern formed on a mask substrate and a design position decided at the time of designing the pattern to a predetermined area of a square on the mask substrate; an irradiating-condition calculating unit that calculates an irradiating condition including an irradiating amount and an irradiating position of radiation to correct the positional deviation calculated to the predetermined area of a square on the mask substrate by using positional-deviation correction information, which indicates a relationship between the irradiating amount and the irradiating position of the radiation to the mask substrate and a pattern position change after irradiation of the radiation; and an irradiating unit that irradiates the mask substrate with the radiation under the irradiating condition calculated by the irradiating-condition calculating unit.

Mask Manufacturing Device

According to one embodiment, a mask manufacturing method includes acquiring positional deviation information between an actual position of a pattern formed on a mask substrate and a design position decided at the time of designing the pattern; calculating an irradiating amount and an irradiating position of radiation to be irradiated to a predetermined area of a square on the mask substrate according to the calculated positional deviation information; and irradiating the radiation based on the calculated irradiating amount and the calculated irradiating position to form in a part of the mask substrate a heterogeneous layer of which volume is expanded more greatly than that of the surrounding mask substrate region. 1. A mask manufacturing method comprising:acquiring positional deviation information between an actual position of a pattern formed on a mask substrate and a design position decided at the time of designing the pattern;calculating an irradiating amount and an irradiating position of radiation to be irradiated to a predetermined area of a square on the mask substrate according to the calculated positional deviation information; andirradiating the radiation based on the calculated irradiating amount and the calculated irradiating position to form in a part of the mask substrate a heterogeneous layer of which volume is expanded more greatly than that of the surrounding mask substrate region.2. The mask manufacturing method according to claim 1 , wherein the calculating an irradiating amount of radiation includes calculating the irradiating amount of the radiation according to positional-deviation correction information indicating a relationship between an irradiating amount of the radiation when an irradiating position of the radiation in a thickness direction of the mask substrate is fixed and a pattern position change after irradiation of the radiation.3. The mask manufacturing method according to claim 2 , wherein the irradiating position of the radiation ...

PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value. 119.-. (canceled)20. A photomask manufacturing apparatus , comprising:a first generating unit configured to generate a pattern dimensional map of a photomask in which a mask pattern is formed on a transparent substrate, the pattern dimensional map being generated by measuring a mask in plane distribution of dimensions of the pattern;a second generating unit configured to generate a transmittance correction coefficient map by dividing a formation region of the pattern into a plurality of subregions and determining a transmittance correction coefficient for each subregion in accordance with a size of a pattern of said each subregion;a third generating unit configured to generate a transmittance correction value map by calculating a transmittance correction value of said each subregion on the basis of the pattern dimensional map and the transmittance correction coefficient map; anda changing unit configured to change a transmittance of the transparent substrate corresponding to said each subregion on the basis of the transmittance correction value map.21. The apparatus according to claim 20 , wherein the mask pattern includes one of a halftone pattern and a light shielding pattern.22. The apparatus ...

Imprint mask, method for manufacturing the same, and method for manufacturing semiconductor device

According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate.

Reticle chuck cleaner

According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

Reticle chuck cleaner and reticle chuck cleaning method

There is provided a reticle chuck cleaner A for cleaning a reticle chuck of an apparatus, as a reticle chuck cleaner that allows easy cleaning of a reticle chuck in a vacuum chamber of an apparatus without exposing the chamber to the atmosphere and contributes to improvement of the operating ratio of the apparatus, including: an adhesive layer 1 to be adhered to a chuck region of the reticle chuck; a support layer 2 laminated on the adhesive layer 1; and a substrate 3 having a shape capable of being carried to the reticle chuck, the support layer 2 and the substrate 3 being partially bonded together in an adhesive region 41 of a partial adhesive layer 4.

Exposure mask manufacturing method, drawing apparatus, semiconductor device manufacturing method, and mask blanks product

A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.

Substrate processing apparatus and processing method by use of the apparatus

An apparatus for processing a substrate comprising a substrate holding mechanism for holding the substrate substantially horizontally, a chemical solution discharge/suction mechanism having a chemical solution discharge/suction portion which has a chemical solution outlet for discharging a chemical solution onto the substrate and chemical solution inlets for sucking up the chemical solution present on the substrate, and a chemical solution supply/suction system for supplying the chemical solution to the chemical solution discharge/suction mechanism simultaneously with sucking the chemical solution by the chemical solution supply/suction mechanism.

Photomask unit, exposing method and method for manufacturing semiconductor device

A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle θ (0°<θ<90°) is higher than transmittance of incident light of an incident angle 0°.

Developing method, substrate treating method, and substrate treating apparatus

A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Exposure mask manufacturing method, drawing device, and semiconductor device manufacturing method

Verfahren zum Herstellen einer Belichtungsmaske, gekennzeichnet durch: Vorbereiten von nativen Ebenheitsdaten (1) und vorhergesagten Ebenheitsdaten (2, 2M) in Bezug auf ein Maskenrohlingssubstrat, das in eine Belichtungsmaske zu verarbeiten ist, wobei die vorhergesagten Ebenheitsdaten (2, 2M) Daten in Bezug auf eine Änderung der Ebenheit des Maskenrohlingssubstrats sind, die verursacht wird, wenn das Maskenrohlingssubstrat durch eine Einspannungseinheit einer Belichtungsvorrichtung eingespannt ist; Generieren von Positionskorrekturdaten (4) eines Musters, das auf dem Maskenrohlingssubstrat zu zeichnen ist, basierend auf den nativen Ebenheitsdaten (1) und den vorhergesagten Ebenheitsdaten (2, 2M), derart, dass ein Maskenmuster der Belichtungsmaske auf eine vorbestimmte Position in einem Zustand, in dem die Belichtungsmaske durch die Einspannungseinheit eingespannt ist, gebracht wird; und Zeichnen eines Musters auf dem Maskenrohlingssubstrat, wobei das Zeichnen des Musters ein Zeichnen des Musters mit einer Korrektur einer Zeichnungsposition des Musters und Eingeben von Zeichnungsdaten (6) entsprechend dem Muster und den Positionskorrekturdaten (4) in eine Zeichnungsvorrichtung... A method of making an exposure mask, characterized by: preparing native flatness data (1) and predicted flatness data (2, 2M) with respect to a blank mask substrate to be processed into an exposure mask, the predicted flatness data (2, 2M) with respect to data to a change in the flatness of the mask blank substrate that is caused when the mask blank substrate is clamped by a clamping unit of an exposure device; Generating position correction data (4) of a pattern to be drawn on the mask blank substrate based on the native flatness data (1) and the predicted flatness data (2, 2M) such that a mask pattern of the exposure mask is at a predetermined position in a state, in which the exposure mask is clamped by the clamping unit; and drawing a pattern on the mask blank substrate, the drawing of ...

Developing method, substrate treating method, and substrate treating apparatus

A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Photomask manufacturing method and semiconductor device manufacturing method

This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.

Development process and method for producing a semiconductor device

Entwicklungsverfahren, dadurch gekennzeichnet, dass es umfasst: vorheriges Bestimmen der Abhängigkeit der Resistauflösungsgeschwindigkeit von der Konzentration des gelösten Resists (1, 2) in einer Entwicklungslösung (31); vorheriges Ermitteln der Konzentration des gelösten Resists (1, 2), bei welcher die Resistauflösungsgeschwindigkeit eine gewünschte Geschwindigkeit oder größer ist, aus der genannten Abhängigkeit; und Entwickeln in einem Zustand, in welchem die Konzentration des gelösten Resists (1, 2) in der Entwicklungslösung (31) kleiner oder gleich der ermittelten Konzentration ist, wobei zumindest entweder die Abgabegeschwindigkeit der Entwicklungslösung oder die relative Bewegungsgeschwindigkeit zwischen der Entwicklungslösungsabgabe/Saugeinheit (20) und dem Substrat (11) so gesteuert wird, dass die Konzentration des gelösten Resists (1, 2) in der Entwicklungslösung kleiner oder gleich der ermittelten Konzentration bei dem Entwicklungsvorgang ist. A developing method, characterized by comprising: previously determining the dependence of the resist dissolution rate on the concentration of the dissolved resist (1, 2) in a developing solution (31); previously determining the concentration of the dissolved resist (1, 2) at which the resist dissolution rate is a desired speed or greater, from said dependency; and developing in a state in which the concentration of the dissolved resist (1, 2) in the developing solution (31) is less than or equal to the detected concentration, wherein at least one of the developing solution discharging speed and the relative moving speed between the developing solution discharging / sucking unit (20 ) and the substrate (11) are controlled so that the concentration of the dissolved resist (1, 2) in the developing solution is less than or equal to the detected concentration in the developing process.

Patent TWI309853B

Exposure mask substrate manufacturing method and exposure mask manufacturing method

Verfahren zum Herstellen eines Belichtungsmaskensubstrats mit einem Substrat und einem lichtabschirmenden Film, gebildet auf dem Substrat, gekennzeichnet durch: Messen einer ersten Flachheit zumindest eines Substrats vor dem Bilden eines lichtabschirmenden Films (S101); Vorhersagen, auf der Grundlage der ersten Flachheit, einer zweiten Flachheit des Substrats, wenn das Substrat in ein Belichtungsgerät eingespannt ist (S103); Auswählen des Substrats mit einer vorgegebenen Flachheit auf der Grundlage der zweiten Flachheit (S104); Vorhersagen, für das ausgewählte Substrat, einer gewünschten dritten Flachheit des Substrats, nachdem ein lichtabschirmender Film auf dem Substrat gebildet ist (S105); Bilden eines lichtabschirmenden Films auf dem ausgewählten Substrat (S106); Messen einer vierten Flachheit des Substrats mit dem gebildeten lichtabschirmenden Film (S107); und Bestimmen, ob das Substrat mit dem lichtabschirmenden Film die gewünschte dritte Flachheit hat, durch Vergleichen der vierten Flachheit mit der dritten Flachheit (S109). A method of manufacturing an exposure mask substrate having a substrate and a light-shielding film formed on the substrate, characterized by: Measuring a first flatness of at least one substrate before forming a light-shielding film (S101); Predicting, based on the first flatness, a second flatness of the substrate when the substrate is clamped in an exposure apparatus (S103); Selecting the substrate having a predetermined flatness based on the second flatness (S104); Predicting, for the selected substrate, a desired third flatness of the substrate after a light-shielding film is formed on the substrate (S105); Forming a light-shielding film on the selected substrate (S106); Measuring a fourth flatness of the substrate with the formed light-shielding film (S107); and Determining whether the substrate having the light-shielding film has the desired third flatness by comparing the fourth flatness with the third flatness (S109).

Substrate for photomask blank, photomask blank and photomask

Substrat für einen Fotomaskenrohling, das viereckig ist und auf jeder Seite eine Länge von mindestens 6 Zoll (152,4 mm) aufweist, das ein Paar von streifenförmigen Bereichen (2) aufweist, die sich zwischen 2 und 10 mm innerhalb jeder eines Paares von gegenüberliegenden Seiten entlang eines äußeren Randes einer Deckfläche (1) des Substrats erstrecken, auf dem eine Maskenstruktur gebildet werden soll, jedoch an jedem Ende in Längsrichtung davon einen Kantenabschnitt von 2 mm ausnehmen, wobei jeder der streifenförmigen Bereiche nach unten in Richtung auf den äußeren Rand des Substrats geneigt ist und die Differenz zwischen Maximal- und Minimalwerten für die Höhe zwischen der Ebene der kleinsten Quadrate (21) für die streifenförmigen Bereiche (2) auf der Substratdeckfläche und den streifenförmigen Bereichen (2) selbst höchstens 0,5 µm beträgt. Substrate for a photomask blank that is quadrangular and has a length of at least 6 inches (152.4 mm) on each side that has a pair of strip-shaped areas (2) that are between 2 and 10 mm inside each of a pair of opposed ones Sides along an outer edge of a top surface (1) of the substrate on which a mask pattern is to be formed, but at each end in the longitudinal direction thereof, exclude an edge portion of 2 mm, each of the strip-shaped portions being directed downward toward the outer edge of the frame Substrate is inclined and the difference between maximum and minimum values for the height between the least squares (21) for the strip-shaped areas (2) on the Substratdeckfläche and the strip-shaped areas (2) itself is at most 0.5 microns.

Exposure mask blank manufacturing method and exposure mask manufacturing method

A method of manufacturing an exposure mask blank including a substrate and a light-shielding film formed on the substrate, comprising measuring a first flatness of each of a plurality of substrates before formation of a light-shielding film, predicting, on the basis of the first flatness, a second flatness of each substrate when chucked on an exposure apparatus, selecting from the plurality of substrates, at least one substrate having a predetermined flatness on the basis of the second flatness, predicting a desired third flatness of the at least one substrate after a light-shielding film is formed on the substrate, forming a light-shielding film on the selected at least one substrate, measuring a fourth flatness of the at least one substrate having the formed light-shielding film, and determining whether the at least one substrate having the light-shielding film has the desired third flatness by comparing the fourth flatness with the third flatness.

Image data correction method, lithography simulation method, image data correction system, program , mask and method of manufacturing a semiconductor device

An image data correction method includes preparing correction data for correcting a distortion of an image obtained by an image acquiring section, acquiring outline data of a desired pattern obtained by the image acquiring section, and correcting the outline data of the desired pattern using the correction data.

Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server

There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server

There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

Method of purifying distillers solubles and use of the purified matter

Distillers solubles are purified by a centrifugal separation to a degree above 50,000 which is the product of g x minute, or a filtration with addition of a filter aid. The clarified matter is purified by a molecular sieve ultrafiltration treatment, reverse osmosis or an organic solvent precipitation. The clarified matter or purified matter thus obtained is pulverized by spray drying, lyophilic drying or air drying. Said clarified matter, purified matter or pulverized matter is added to a fermentation medium or a feed as an available component.

Mask inspection apparatus and mask inspection method

According to one embodiment, a mask inspection apparatus includes a decompression chamber, a holder, a light irradiation unit, a detection unit, an electrode, and a control unit. The holder is provided in the decompression chamber and holds a mask. The light irradiation unit irradiates a major surface of the mask held by the holder with a light. The detection unit is provided in the decompression chamber to detect electrons generated when the major surface of the mask is irradiated with the light. The electrode is provided between the holder and the detection unit and guides the electrons in a direction from the holder toward the detection unit. The control unit compares a detection result of the electrons detected by the detection unit with a reference value.

Photomask blank substrate, photomask blank and photomask

Semiconductor device manufacturing method

A method of manufacturing a semiconductor device by forming an exposure mask blank including a substrate and a light-shielding film formed thereon, comprising measuring a first flatness of each of a plurality of substrates before formation of a light-shielding film, predicting, on the basis of the first flatness, a second flatness of each substrate when chucked on an exposure apparatus, selecting from the plurality of substrates, at least one substrate having a predetermined flatness on the basis of the second flatness, predicting a desired third flatness of the at least one substrate after a light-shielding film is formed on the substrate, forming a light-shielding film on the selected at least one substrate, measuring a fourth flatness of the at least one substrate having the formed light-shielding film, determining whether the at least one substrate having the light-shielding film has the desired third flatness by comparing the fourth flatness with the third flatness, then patterning an exposure mask, chucking it in the exposure apparatus, and transferring an image onto a predetermined substrate.

Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server

There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

Reticle chuck cleaner

According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

Imprint mask manufacturing method, imprint mask manufacturing device, and semiconductor device manufacturing method

A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved.

Manufacturing method for exposure mask, generating method for mask substrate information

Manufacturing method for exposure mask, generating method for mask substrate information

Photomask, method of manufacturing a photomask, and method of manufacturing an electronic product

Method for selecting photomask substrate, method for manufacturing photomask, and method for manufacturing semiconductor device

According to an aspect of the invention, there is provided a method for selecting a photomask substrate, including dividing a chip area scheduled to be arranged on the photomask substrate regarding a specific transfer pattern layer into a management pattern area in which an element pattern changed in shape by birefringence of the photomask substrate is arranged, and an area other than the management pattern area, setting a standard value of a size of birefringence of an area in which the management pattern area of the photomask substrate is arranged, inspecting the size of the birefringence of each of a plurality of photomask substrate candidates, and selecting a photomask substrate, in which the size of the birefringence satisfies the standard value, as a photomask substrate of the specific transfer pattern layer from the plurality of photomask substrate candidates.

光罩吸盤潔淨器及光罩吸盤清潔方法

本發明係提供一種用以清潔EUV曝光裝置之光罩吸盤的光罩吸盤潔淨器A，其係不需將EUV曝光裝置之真空腔室內部曝露在大氣下，即可簡易進行該腔室內之光罩吸盤的清潔，有助於提升EUV曝光裝置的運轉率，該光罩吸盤潔淨器A係具備：貼附於光罩吸盤之吸盤區域的黏著劑層1；積層於該黏著劑層1的支撐層2；及具有可搬運至光罩吸盤之形狀的基板3，支撐層2與基板3係與部分黏合層4之黏合區域41局部地接合。

Mask substrate and its manufacturing method

Reticle chuck cleaner

According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

Exposure mask and method for manufacturing same and method for manufacturing semiconductor device

An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region.

[UNK]

Pattern formation material, pattern formation method, and exposure mask fabrication method

This invention provides a pattern formation material for electron beam lithography, which contains an alkali-soluble resin, a photoacid generator, and dissolution inhibiting groups, and also provides a pattern formation method and exposure mask fabrication method using the material. As the dissolution inhibiting groups, this invention uses a first dissolution inhibiting group which increases the sensitivity of the pattern formation material when the material is left to stand in a vacuum after an electron beam irradiation, and a second dissolution inhibiting group which decreases the sensitivity under the same condition. In this invention, the ratio of the first dissolution inhibiting group to the second dissolution inhibiting group is so adjusted that the size of an alkali-soluble portion, which is made soluble in an alkali solution by an electron beam irradiation, is substantially held constant independently of the standing time in a vacuum.

Reticle chuck cleaner

According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

Reticle chuck cleaner and reticle chuck cleaning method

There is provided a reticle chuck cleaner A for cleaning a reticle chuck of an apparatus, as a reticle chuck cleaner that allows easy cleaning of a reticle chuck in a vacuum chamber of an apparatus without exposing the chamber to the atmosphere and contributes to improvement of the operating ratio of the apparatus, including: an adhesive layer 1 to be adhered to a chuck region of the reticle chuck; a support layer 2 laminated on the adhesive layer 1 ; and a substrate 3 having a shape capable of being carried to the reticle chuck, the support layer 2 and the substrate 3 being partially bonded together in an adhesive region 41 of a partial adhesive layer 4.

Imprint mask, method for manufacturing the same, and method for manufacturing semiconductor device

According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate.

Template substrate, method for manufacturing same, and template

According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An impurity is introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region. The mask film is provided on the upper surface of the substrate.