Semiconductor device and a method of manufacturing the same

A semiconductor device includes an active pattern on a substrate, a source/drain pattern on the active pattern, a first metal layer on the source/drain pattern, the first metal layer comprising a power interconnection line, a through-via electrically connected to the power interconnection line, the through-via vertically extending to penetrate the substrate, a power delivery network layer on a bottom surface of the substrate, and a lower through-via between the power delivery network layer and the through-via. The through-via includes a first metal pattern connected to the lower through-via, and a second metal pattern stacked on the first metal pattern. A density of the first metal pattern is greater than a density of the second metal pattern. A resistivity of the first metal pattern is greater than a resistivity of the second metal pattern.