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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 4. Отображено 4.
29-01-2013 дата публикации

Method for performing electron beam lithography

Номер: US0008361699B2
Автор: Theodor Kamp Nielsen, Brian Bilenberg, Peixiong Shi, NIELSEN THEODOR KAMP, BILENBERG BRIAN, SHI PEIXIONG
Принадлежит: Nil Technology APS, NIL TECHNOLOGY APS, NIELSEN THEODOR KAMP, BILENBERG BRIAN, SHI PEIXIONG

The present invention relates to a method for performing high speed electron beam lithography (EBL). An electron beam source (EBS), capable of emitting an electron beam towards the energy sensitive resist, forms a first pattern (P1) on the substrate, the first pattern defining a first direction (D1) on the substrate. The electron beam source then forms a second pattern (P2) on the substrate. The energy and/or dose delivered to the energy sensitive resist during the exposure of the first and the second pattern is dimensioned so that the threshold dose/energy of the energy sensitive resist is reached on the overlapping portions of the first and the second patterns (P1, P2). The invention provides a high speed technique for the production of substrates with high quality developed patterns, e.g. hole or dot arrays, by electron beam lithography. Each hole or dot may be defined by the mutually overlapping portions of the first and second pattern, e.g. exposed lines forming a grid, instead of ...

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Номер записи: 1
03-03-2011 дата публикации

METHOD FOR PERFORMING ELECTRON BEAM LITHOGRAPHY

Номер: US20110053087A1
Автор: Theodor Kamp Nielsen, Brian Bilenberg, Peixiong Shi
Принадлежит:

The present invention relates to a method for performing high speed electron beam lithography (EBL). An electron beam source (EBS), capable of emitting an electron beam towards the energy sensitive resist, forms a first pattern (P1) on the substrate, the first pattern defining a first direction (D1) on the substrate. The electron beam source then forms a second pattern (P2) on the substrate. The energy and/or dose delivered to the energy sensitive resist during the exposure of the first and the second pattern is dimensioned so that the threshold dose/energy of the energy sensitive resist is reached on the overlapping portions of the first and the second patterns (P1, P2). The invention provides a high speed technique for the production of substrates with high quality developed patterns, e.g. hole or dot arrays, by electron beam lithography. Each hole or dot may be defined by the mutually overlapping portions of the first and second pattern, e.g. exposed lines forming a grid, instead of ...

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Номер записи: 2
13-08-2009 дата публикации

A method for performing electron beam lithography

Номер: WO2009097859A1
Автор: Brian Bilenberg, Peixiong Shi, Theodor Kamp Nielsen
Принадлежит: Nil Technology Aps

The present invention relates to a method for performing high speed electron beam lithography (EBL). An electron beam source (EBS), capable of emitting an electron beam towards the energy sensitive resist, forms a first pattern (Pl) on the substrate, the first pattern defining a first direction (Dl) on the substrate. The electron beam source then forms a second pattern (P2) on the substrate. The energy and/or dose delivered to the energy sensitive resist during the exposure of the first and the second pattern is dimensioned so that the threshold dose/energy of the energy sensitive resist is reached on the overlapping portions of the first and the second patterns (Pl, P2). The invention provides a high speed technique for the production of substrates with high quality developed patterns, e.g. hole or dot arrays, by electron beam lithography. Each hole or dot may be defined by the mutually overlapping portions of the first and second pattern, e.g. exposed lines forming a grid, instead of addressing each dot or hole separately.

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Номер записи: 3
03-11-2010 дата публикации

A method for performing electron beam lithography

Номер: EP2245646A1
Автор: Brian Bilenberg, Peixiong Shi, Theodor Kamp Nielsen
Принадлежит: Nil Tech APS

The present invention relates to a method for performing high speed electron beam lithography (EBL). An electron beam source (EBS), capable of emitting an electron beam towards the energy sensitive resist, forms a first pattern (Pl) on the substrate, the first pattern defining a first direction (Dl) on the substrate. The electron beam source then forms a second pattern (P2) on the substrate. The energy and/or dose delivered to the energy sensitive resist during the exposure of the first and the second pattern is dimensioned so that the threshold dose/energy of the energy sensitive resist is reached on the overlapping portions of the first and the second patterns (Pl, P2). The invention provides a high speed technique for the production of substrates with high quality developed patterns, e.g. hole or dot arrays, by electron beam lithography. Each hole or dot may be defined by the mutually overlapping portions of the first and second pattern, e.g. exposed lines forming a grid, instead of addressing each dot or hole separately.

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Номер записи: 4