Lithography using a phase-shifting reticle with reduced transmittance

A reticle and method of forming a patterned resist layer on a semiconductor substrate using the reticle is described. The substrate is coated with a resist layer. The resist layer is selectively exposed to a radiation wave having a wavelength that is transmitted through the reticle. The reticle includes at least one first, second, and third areas. The first area has a first transmittance. The second area is adjacent to the first area and has a second transmittance that is less than the first transmittance. The second area shifts radiation transmitted through the second area approximately 180° out of phase relative to radiation transmitted through the first area. The third area is adjacent to the second area. The third area is substantially opaque to prevent virtually any transmission of radiation. The resist layer is developed to form the patterned resist layer including at least one resist layer opening and at least one resist element.