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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 11. Отображено 8.
21-05-2015 дата публикации

SILICON ETCHING METHOD

Номер: US20150140823A1
Автор: SU Jiale
Принадлежит:

A silicon etching method of etching a silicon substrate to form silicon trenches having different width dimensions includes: S providing a silicon substrate; S depositing a mask layer on the silicon substrate; S corroding the mask layer to form windows having different width dimensions, wherein a mask layer having a certain thickness is reserved at least at a bottom portion of a window having a non-minimum width dimension, such that all the silicon trenches have the same depth after step S and S corroding the mask layer at the bottom portion of the window and the silicon substrate to form the silicon trenches. The mask layer having a certain thickness is reserved at the bottom portion of the window having the non-minimum width dimension, a relatively large window is protected, and a relatively small window is etched first, so that the finally obtained silicon trenches have the same depth. 1. A silicon etching method of etching a silicon substrate to form silicon trenches having different width dimensions , comprising:{'b': '1', 'S, providing a silicon substrate;'}{'b': '2', 'S, depositing a mask layer on the silicon substrate;'}{'b': 3', '4, 'S, corroding the mask layer to form windows having different width dimensions, wherein a mask layer having a certain thickness is reserved at least at a bottom portion of a window having a non-minimum width dimension, such that all the silicon trenches have the same depth after step S; and'}{'b': '4', 'S, corroding the mask layer at the bottom portion of the window and the silicon substrate to form the silicon trenches.'}2. The silicon etching method according to claim 1 , wherein the mask layer is made of silicon dioxide claim 1 , silicon nitride or photoresist.34. The silicon etching method according to claim 1 , wherein in the step S claim 1 , the mask layer at the bottom portion of the window and the silicon substrate are corroded using a deep reactive ion etching method.44. The silicon etching method according to claim 1 , ...

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05-07-2018 дата публикации

Photolithography method and system based on high step slope

Номер: US20180188652A1
Автор: Jiale SU
Принадлежит: CSMC Technologies Fab1 Co Ltd

A photolithography system based on a high step slope may include a depositing unit configured to manufacture a sacrificial layer having high step slope on a substrate. The system may also include a coating unit configured to coat a photoresist layer on the sacrificial layer by performing a spin-on PR coating process to form a photolithographic layer. The system may further include a photolithography unit configured to perform one or more photolithography processes to the photolithographic layer. The photolithography unit may comprise a plurality of masks of compensation patterns. The compensation pattern may comprise a slope-top compensation pattern and a slope compensation pattern.

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13-08-2015 дата публикации

Photolithography method and system based on high step slope

Номер: US20150227048A1
Автор: Jiale SU
Принадлежит: CSMC Technologies Fab1 Co Ltd

A photolithography method and system based on a high step slope are provided. The method includes: S 1, manufacturing a sacrificial layer with a high step slope on a substrate; S 2, adopting a spin-on PR coating process to cover the sacrificial layer with a photoresist layer to form a photolithographic layer; S 3, forming a mask pattern and a compensation pattern on a mask; and S 4, performing photolithography processes, by a photolithography machine, on the photolithographic layer. By forming a slope-top compensation pattern and a slope compensation pattern on a mask to perform photolithography on the substrate of a sacrificial layer, a relatively wide compensation pattern is set in a part of the top of the slope with a small thickness, thereby compensating the overexposure at the top of the slope, reducing the error in the photolithographic pattern, and improving the precision of photolithography of the high step slope.

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30-07-2020 дата публикации

Method of forming cavity based on deep trench erosion

Номер: US20200243342A1
Принадлежит: CSMC Technologies Fab2 Co Ltd

A method of forming a cavity based on a deep trench erosion, comprising: providing a semiconductor substrate (200), and performing the deep trench erosion to the semiconductor substrate to form an array of a plurality of trenches (201) in the semiconductor substrate (200), a pitch (D1) between the outermost grooves in the array being greater than a pitch (D2) between the remaining trenches in the array; and preforming an annealing treatment to the semiconductor substrate (200) to form a cavity (202) in the semiconductor substrate (200).

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12-06-2024 дата публикации

Temperature sensor manufacturing method

Номер: EP3845485B1
Принадлежит: CSMC Technologies Fab2 Co Ltd

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25-06-2024 дата публикации

MEMS microphone and preparation method therefor

Номер: US12022270B2
Принадлежит: CSMC Technologies Fab2 Co Ltd

A preparation method for a micro-electromechanical systems (MEMS) microphone includes the steps of: providing a silicon substrate having a silicon surface; forming an enclosed cavity in the silicon substrate; forming a plurality of spaced apart acoustic holes in the silicon substrate, each acoustic hole having two openings, one of which communicating with the cavity and the other one located on the silicon surface; forming a sacrificial layer on the silicon substrate, which includes a first filling portion, a second filling portion and a shielding portion; forming a polysilicon layer on the shielding portion; forming a recess in the silicon substrate on the side away from the silicon surface; and removing the first filling portion, the second filling portion and part of the shielding portion so that the recess is brought into communication with the cavity to form a back chamber, and that the polysilicon layer, the remainder of the shielding portion and the silicon substrate together delimit a hollow chamber, the hollow chamber communicating with the opening of the plurality of acoustic holes away from the cavity, completing the MEMS microphone.

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10-04-2018 дата публикации

Photolithography method and system based on high step slope

Номер: US9939724B2
Автор: Jiale SU
Принадлежит: CSMC Technologies Fab1 Co Ltd

A photolithography method and system based on a high step slope are provided. The method includes: S 1 , manufacturing a sacrificial layer with a high step slope on a substrate; S 2 , adopting a spin-on PR coating process to cover the sacrificial layer with a photoresist layer to form a photolithographic layer; S 3 , forming a mask pattern and a compensation pattern on a mask; and S 4 , performing photolithography processes, by a photolithography machine, on the photolithographic layer. By forming a slope-top compensation pattern and a slope compensation pattern on a mask to perform photolithography on the substrate of a sacrificial layer, a relatively wide compensation pattern is set in a part of the top of the slope with a small thickness, thereby compensating the overexposure at the top of the slope, reducing the error in the photolithographic pattern, and improving the precision of photolithography of the high step slope.

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12-06-2024 дата публикации

Temperature sensor manufacturing method

Номер: EP3845485C0
Принадлежит: CSMC Technologies Fab2 Co Ltd

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