21-05-2015 дата публикации
Номер: US20150140823A1
Принадлежит:
A silicon etching method of etching a silicon substrate to form silicon trenches having different width dimensions includes: S providing a silicon substrate; S depositing a mask layer on the silicon substrate; S corroding the mask layer to form windows having different width dimensions, wherein a mask layer having a certain thickness is reserved at least at a bottom portion of a window having a non-minimum width dimension, such that all the silicon trenches have the same depth after step S and S corroding the mask layer at the bottom portion of the window and the silicon substrate to form the silicon trenches. The mask layer having a certain thickness is reserved at the bottom portion of the window having the non-minimum width dimension, a relatively large window is protected, and a relatively small window is etched first, so that the finally obtained silicon trenches have the same depth. 1. A silicon etching method of etching a silicon substrate to form silicon trenches having different width dimensions , comprising:{'b': '1', 'S, providing a silicon substrate;'}{'b': '2', 'S, depositing a mask layer on the silicon substrate;'}{'b': 3', '4, 'S, corroding the mask layer to form windows having different width dimensions, wherein a mask layer having a certain thickness is reserved at least at a bottom portion of a window having a non-minimum width dimension, such that all the silicon trenches have the same depth after step S; and'}{'b': '4', 'S, corroding the mask layer at the bottom portion of the window and the silicon substrate to form the silicon trenches.'}2. The silicon etching method according to claim 1 , wherein the mask layer is made of silicon dioxide claim 1 , silicon nitride or photoresist.34. The silicon etching method according to claim 1 , wherein in the step S claim 1 , the mask layer at the bottom portion of the window and the silicon substrate are corroded using a deep reactive ion etching method.44. The silicon etching method according to claim 1 , ...
Подробнее