Method of manufacturing a semiconductor device having a patterned multi-layer structure

Dry etching of metal film

DRY ETCHING OF METAL FILM ABSTRACT OF THE DISCLOSURE A process for dry etching an aluminum film and an aluminum based film in the production of a semiconductor device, wherein a mixed gas of carbon chloride and boron chloride is used as an etchant gas.

Method of etching

ABSTRACT A method of manufacturing a semiconductor device having a multi-layer structure comprises the steps of patterning in accordance with a predetermined pattern a thin film of photoresist formed on a film to be etched which has been formed on a semiconductor substrate, etching the film to be etched partly by an isotropic etching using said patterned film as a mask, etching the film to be etched completely by an anisotropic etching in the direction of its depth, and forming to the etched film a pattern having tapered or inclined sides. These isotropic and anisotropic etchings may be carried out in the same apparatus by changing reactive gases used in these etchings and conditions of each etching such as the amount of gas, gas pressure and radio frequency power to be applied.

Method of manufacturing a semiconductor device