SELF-ASSEMBLED MONOLAYER BLOCKING WITH INTERMITTENT AIR-WATER EXPOSURE

Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.

Gas delivery system for high pressure processing chamber

A high-pressure processing system includes a first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second, a valve assembly to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to introduce a gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres, an exhaust line to remove gas from the first chamber, and a containment enclosure surrounding a portion of the gas delivery system and the exhaust line to divert gas leaking from the portion of the gas delivery system and the exhaust line to the foreline.

METHODS FOR FABRICATING NANOWIRE FOR SEMICONDUCTOR APPLICATIONS

The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer, maintaining a process pressure at greater than 5 bar, and selectively forming an oxidation layer on the second group of sidewalls in the second layer. 1. A method of forming nanowire structures on a substrate comprising:supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer;maintaining the oxygen containing gas mixture in the processing chamber at a process pressure at greater than 5 bar; andselectively forming an oxidation layer on the second group of sidewalls in the second layer in the presence of the oxygen containing gas mixture, wherein a ratio of an oxidation rate of the second group of sidewalls to the first group of sidewalls is greater than 5:1.2. The method of claim 1 , wherein supplying the oxygen containing gas mixture further comprises:maintaining a substrate temperature at greater than 200 degrees Celsius.3. The method of claim 1 , wherein oxygen containing gas mixture includes at least an oxygen containing gas selected from a group consisting of O claim 1 , O claim 1 , HO claim 1 , HO claim 1 , or steam.4. The method of ...

Seam-healing method upon supra-atmospheric process in diffusion promoting ambient

Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.

TUNGSTEN DEFLUORINATION BY HIGH PRESSURE TREATMENT

An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber. 1. An annealing system , comprising:a chamber body that defines a chamber;a support to hold a workpiece with an outer surface of the workpiece exposed to an environment in the chamber;a robot to insert the workpiece into the chamber;a first gas supply to provide a hydrogen gas;a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres; anda controller coupled to the robot, the first gas supply and the pressure source, the controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, wherein the metal film comprises fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.2. The annealing system of claim 1 , comprising a heater for heating the workpiece on the support to a temperature of about 250° C. to about 600° C.3. The annealing system of claim 2 , wherein the heater comprises a resistive heater embedded in the ...

GAS DELIVERY SYSTEM FOR HIGH PRESSURE PROCESSING CHAMBER

A high-pressure processing system includes a first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second, a valve assembly to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to introduce a gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres, an exhaust line to remove gas from the first chamber, and a containment enclosure surrounding a portion of the gas delivery system and the exhaust line to divert gas leaking from the portion of the gas delivery system and the exhaust line to the foreline. 1. A high-pressure processing system comprising:a first chamber comprising having a support to hold substrate in the first chamber while processing;a first slit valve assembly for sealing the first chamber; anda second chamber surrounding the first chamber and the first slit valve, wherein the first slit valve assembly is operable to selectively isolate the first chamber from the second chamber.2. The high-pressure processing system of claim 1 , further comprising a second slit valve assembly for sealing the second chamber.3. The high-pressure processing system of claim 1 , further comprising a gas delivery system configured to pressurize and depressurize the first chamber.4. The high-pressure processing system of claim 3 , wherein the gas delivery system comprises a first delivery line coupled to the first chamber; and wherein the gas delivery system is configured to introduce a first gas into the first chamber via the first delivery line.5. The high-pressure processing system of claim 4 , wherein the gas delivery system comprises a second delivery line coupled to the first chamber; and wherein the gas delivery system is configured to introduce a second gas into the first chamber via the second delivery line.6. The high- ...

HIGH-PRESSURE ANNEALING AND REDUCING WET ETCH RATES

Methods are described for reducing the wet etch rate of dielectric films formed on a patterned substrate by flowing the material into gaps during deposition. Films deposited in this manner may initially exhibit elevated wet etch rates. The dielectric films are treated by exposing the patterned substrate to a high pressure of water vapor in the gas phase. The treatment may reduce the wet etch rate of the dielectric films, especially the gapfill portion of the dielectric film. Scanning electron microscopy has confirmed that the quantity and/or size of pores is reduced or eliminated by the procedures described herein. The treatment has also been found to reduce the etch rate, e.g., at the bottom of gaps filled with the dielectric film. 1. A method of processing a gapfill dielectric on a patterned substrate , the method comprising:forming a gapfill dielectric in a gap on the patterned substrate, wherein the gapfill dielectric comprises pores but otherwise fills the gap on the patterned substrate and wherein a width of the gap is below 32 nm and a height of the gap is greater than 100 nm;placing the patterned substrate into a substrate processing region of a substrate processing chamber, and{'sub': '2', 'densifying the gapfill dielectric by exposing the gapfill dielectric to gas-phase HO at a partial pressure between 145 psi and 864 psi to form densified gapfill dielectric, wherein the gapfill dielectric comprises silicon and hydrogen and wherein a temperature of the patterned substrate is between 300° C. and 700° C. during the densifying of the gapfill dielectric'}2. (canceled)3. The method of further comprising exposing the gapfill dielectric to UV-light prior to densifying the gapfill dielectric.4. The method of further comprising etching the gapfill dielectric with HF or a buffered oxide etching solution.5. (canceled)6. The method of wherein a lowest temperature of an exposed surface within the substrate processing region is greater than 180° C.7. The method of ...

SELF-ASSEMBLED MONOLAYER BLOCKING WITH INTERMITTENT AIR-WATER EXPOSURE

Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials. 120-. (canceled)21. A method of processing a substrate , comprising:simultaneously exposing a substrate to a self-assembled monolayer (“SAM”) molecule and a hydroxyl moiety for a first period of time to achieve selective deposition of a SAM on a first material, wherein the substrate comprises an exposed first material and an exposed second material;repeating the simultaneously substrate to a self-assembled monolayer (“SAM”) molecule and a hydroxyl moiety for a second period of time to achieve selective deposition of a SAM on the first material;selectively depositing a third material on the exposed second material; andremoving the SAM from the first material.22. The method of claim 21 , wherein a hydroxyl moiety precursor is selected from the group consisting of ambient air claim 21 , water solution claim 21 , water vapor claim 21 , hydrogen peroxide solution claim 21 , hydrogen peroxide vapor claim 21 , organic alcohol solutions claim 21 , and organic alcohol vapors.23. The method of claim 22 , wherein the hydroxyl moiety precursor is selected from the group consisting of water solution claim 22 , water vapor claim 22 , and ambient air.24. The method of claim 21 , wherein a hydroxyl moiety precursor is water vapor.25. The method of claim 21 , wherein a hydroxyl moiety precursor is ambient air.26. The method of claim 21 , wherein the SAM molecule is selected from the group consisting of carboxylic acid materials claim 21 , phosphonic acid materials claim 21 , thiol materials claim 21 , silylamine materials claim 21 , chlorosilane materials claim 21 , oxysilane ...

INTEGRATED PLATFORM FOR TIN PVD AND HIGH-K ALD FOR BEOL MIM CAPACITOR

Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate in an integrated tool comprising a physical vapor deposition chamber and a thermal atomic layer deposition chamber comprises depositing, in the physical vapor deposition chamber, a bottom layer of titanium nitride on the substrate to a thickness of about 10 nm to about 80 nm, transferring, without vacuum break, the substrate from the physical vapor deposition chamber to the thermal atomic layer deposition chamber for depositing a nanolaminate layer of high-k material atop the bottom layer of titanium nitride to a thickness of about 2 nm to about 10 nm, and transferring, without vacuum break, the substrate from the thermal atomic layer deposition chamber to the physical vapor deposition chamber for depositing a top layer of titanium nitride atop the nanolaminate layer of high-k material to a thickness of about 10 nm to about 80 nm. 1. A method of processing a substrate in an integrated tool comprising a physical vapor deposition chamber and a thermal atomic layer deposition chamber , the method comprising:depositing, in the physical vapor deposition chamber, a bottom layer of titanium nitride on the substrate to a thickness of about 10 nm to about 80 nm;transferring, without vacuum break, the substrate from the physical vapor deposition chamber to the thermal atomic layer deposition chamber for depositing a nanolaminate layer of high-k material atop the bottom layer of titanium nitride to a thickness of about 2 nm to about 10 nm; andtransferring, without vacuum break, the substrate from the thermal atomic layer deposition chamber to the physical vapor deposition chamber for depositing a top layer of titanium nitride atop the nanolaminate layer of high-k material to a thickness of about 10 nm to about 80 nm.2. The method of claim 1 , further comprising depositing the bottom layer of titanium nitride and the top layer of titanium nitride to a thickness ...

Cluster processing system for forming a transition metal material

Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a two-dimensional transition metal dichalcogenide layer on a substrate in a first processing chamber disposed in a cluster processing system, thermally treating the two-dimensional transition metal dichalcogenide layer to form a treated metal layer in a second processing chamber disposed in the cluster processing system, and forming a capping layer on the treated metal layer in a third processing chamber disposed in the cluster processing system. 1. A method for a device structure for semiconductor devices , comprising:forming a two-dimensional transition metal dichalcogenide layer on a substrate in a first processing chamber disposed in a cluster processing system;thermally treating the two-dimensional transition metal dichalcogenide layer to form a treated metal layer in a second processing chamber disposed in the cluster processing system; andforming a capping layer on the treated metal layer in a third processing chamber disposed in the cluster processing system.2. The method of claim 1 , wherein the two-dimensional transition metal dichalcogenide layer is at least one of MoS claim 1 , WS claim 1 , MoSeand WSe.3. The method of claim 1 , wherein the two-dimensional transition metal dichalcogenide layer is formed from an atomic layer deposition process.4. The method of claim 1 , wherein the capping layer is formed from a chemical vapor deposition process.5. The method of claim 1 , wherein the capping layer is at least one of SiN claim 1 , SiO claim 1 , SiON claim 1 , SiC claim 1 , SiOC claim 1 , HfO claim 1 , ZrOand AlO.6. The method of claim 1 , wherein thermally treating the two-dimensional transition metal dichalcogenide layer further comprises:maintaining a substrate temperature between about 600 degrees ...

METHOD FOR FORMING A LAYER

Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved. 1. A device , comprising:a first material having a first surface;a second material having a second surface;a mask disposed on the first surface, the mask having an edge portion extending over the second surface; anda layer disposed between the edge portion and the second surface, the layer being in contact with the edge portion and the second surface.2. The device of claim 1 , wherein the first material comprises an electrically conductive material claim 1 , and the second material comprises a dielectric material.3. The device of claim 2 , wherein the first material comprises a metal claim 2 , and the second material comprises silicon carbide claim 2 , silicon oxycarbide claim 2 , silicon nitride claim 2 , tungsten carbide claim 2 , or tungsten oxide.4. The device of claim 3 , wherein the mask comprises a high-k dielectric material.5. The device of claim 4 , wherein the layer is distinct from the mask.6. The device of claim 4 , wherein the mask comprises hafnium oxide claim 4 , zirconium oxide claim 4 , aluminum oxide claim 4 , or titanium oxide.7. The device of claim 6 , wherein the layer comprises hafnium oxide claim 6 , zirconium oxide claim 6 , aluminum oxide claim 6 , or titanium oxide.8. The device of ...

HIGH PRESSURE WAFER PROCESSING SYSTEMS AND RELATED METHODS

A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber. 1. A high-pressure processing system comprising:a first chamber having a support to hold a substrate during processing;a second chamber; and an exhaust line passing through a top of the first chamber and a top of the second chamber; and', 'an input line passing through the top of the first chamber and the top of the second chamber., 'a gas delivery system configured to pressurize and depressurize the first chamber, the gas delivery system comprising2. The high-pressure processing system of further comprising a valve assembly disposed between the first chamber and the second chamber and configured to isolate the first chamber from the second chamber.3. The high-pressure processing system of claim 2 , wherein the valve assembly comprises:a slit that passes through a wall between the first chamber and the second chamber; andan arm configured cover and uncover the slit.4. The high-pressure processing system of claim 1 , wherein the second chamber at least partially surrounds the first chamber.5. The high-pressure processing system of claim 1 , wherein the gas delivery system is configured to depressurize the first chamber by removing a gas from the first chamber via the exhaust line claim 1 , and to pressurize the first chamber by ...

HIGH PRESSURE WAFER PROCESSING SYSTEMS AND RELATED METHODS

A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber. 1. A high-pressure processing system for processing a layer on a substrate , the system comprising:a first chamber;a pedestal to support the substrate, the pedestal being positioned within the first chamber;a second chamber adjacent the first chamber;a vacuum processing system configured to lower a pressure within the second chamber to near vacuum;a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber;a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber; and operate the gas delivery system to introduce the processing gas into the first chamber to process the layer on the substrate, and', 'open the valve assembly to enable the substrate to be transferred from the first chamber to the second chamber., 'a controller configured to'}2. The system of claim 1 , wherein the pedestal is fixed to walls defining the first chamber.3. The system of claim 1 , wherein the valve assembly comprises a slit valve between the ...

HIGH PRESSURE WAFER PROCESSING SYSTEMS AND RELATED METHODS

A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber. 1. A combined processing chamber for processing a layer on a substrate , the combined processing chamber comprising:a high-pressure chamber having a ceiling and an outer wall;a vacuum chamber, wherein the high-pressure chamber surrounds the outer wall of vacuum chamber;a pedestal to support the substrate, the pedestal being positioned within the high-pressure chamber;a gas delivery system configured to introduce a processing gas into the high-pressure through the ceiling of the high-pressure chamber and to increase the pressure within the high pressure chamber while the high-pressure chamber is isolated from the vacuum chamber; anda valve assembly configured to selectively isolate the pressure within the vacuum from the pressure within the high-pressure chamber.2. The combined processing chamber of claim 1 , further comprising a vacuum assembly configured to lower a pressure within the vacuum chamber to near vacuum.3. The combined processing chamber of claim 2 , further comprising a controller configured to operate the vacuum assembly.4. The combined processing chamber of claim 2 , wherein the valve assembly further comprises an isolation valve configured to adjust the pressure within the vacuum chamber and to release gases within ...

HIGH SELECTIVITY ATOMIC LAYER DEPOSITION PROCESS

Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate. 1. A method of forming a metal containing material on a substrate comprising:pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate;pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate;forming a metal containing material selectively on a first material of the substrate; andthermal annealing the metal containing material formed on the substrate.2. The method of claim 1 , wherein the first and the second gas precursors are alternatively supplied.3. The method of claim 1 , further comprising:supplying a third gas precursor comprising an oxygen containing gas to the surface of the substrate.4. The method of claim 1 , wherein the substrate comprises the first material and a second material different from the first material.5. The method of claim 4 , wherein the first material is a silicon material or a metal material.6. The method of claim 4 , wherein the second material is an insulating material.7. The method of claim 6 , wherein the insulating material is at least one of SiO claim 6 , SiON claim 6 , SiN claim 6 , SiOC and SiOCH.8. The method of claim 1 , wherein the metal containing precursor comprises molybdenum (Mo).9. The method of claim 8 , wherein the metal containing precursor is at least one of molybdenum hexafluoride (MoF) claim 8 , Mo(NMe ...

High selectivity atomic later deposition process

Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one example, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a carboxylic acid to the surface of the substrate, and forming a metal containing material selectively on a first material of the substrate. In another example, a method of forming a metal containing material on a substrate includes selectively forming a metal containing layer on a silicon material or a metal material on a substrate than on an insulating material on the substrate by an atomic layer deposition process by alternatively supplying a metal containing precursor and a water free precursor to the substrate.

HIGH PRESSURE TREATMENT OF SILICON NITRIDE FILM

Methods and systems relating to processes for treating a silicon nitride film on a workpiece including supporting the workpiece in a chamber, introducing an amine gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the silicon nitride film on the workpiece to the amine gas while the pressure in the chamber is at least 5 atmospheres. 1. A method of treating a dielectric film that include silicon-nitride bonds on a workpiece , comprising:supporting the workpiece that has the dielectric film that includes silicon-nitride bonds in a chamber;introducing an amine gas into the chamber;establishing a pressure of at least 5 atmospheres in the chamber; andexposing the dielectric film on the workpiece to the amine gas while the pressure in the chamber is at least 5 atmospheres.2. The method of claim 1 , comprising raising a temperature of the film to between 200-500° C.3. The method of claim 2 , wherein raising the temperature of the dielectric film comprises maintaining a support for the workpiece in the chamber at an elevated temperature.4. The method of claim 3 , wherein the temperature of the dielectric film is raised before establishing the pressure in the chamber of at least 5 atmospheres.5. The method of claim 1 , wherein establishing the pressure in the chamber comprises introducing the amine gas in the chamber.6. The method of claim 5 , wherein the amine gas comprises ammonia gas.7. The method of claim 5 , wherein the amine gas includes methylamine gas and/or dimethylamine gas.8. The method of claim 1 , wherein the dielectric film is a portion of a fin field-effect transistor in fabrication.9. The method of claim 1 , comprising exposing the dielectric film to the amine gas for at least 5 minutes.10. The method of claim 1 , wherein the dielectric film is a silicon nitride claim 1 , silicon oxynitride or silicon carbon nitride film.11. A method of forming a dielectric material on a workpiece claim 1 , comprising:depositing a ...

TUNGSTEN DEFLUORINATION BY HIGH PRESSURE TREATMENT

Methods and systems relating to processes for treating a tungsten film on a workpiece including supporting the workpiece in a chamber, introducing hydrogen gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the tungsten film on the workpiece to the hydrogen gas while the pressure in the chamber is at least 5 atmospheres. 1. A method of treating a tungsten film on a workpiece , comprising:supporting the workpiece in a chamber;introducing a hydrogen gas into the chamber; andestablishing a pressure of at least 5 atmospheres in the chamber; andexposing the tungsten film on the workpiece to the hydrogen gas for about 2 minutes to about 2 hours while the pressure in the chamber is at least 5 atmospheres.2. The method of claim 1 , comprising raising a temperature of the tungsten film to between 250-600° C.3. The method of claim 2 , wherein raising the temperature of the tungsten film comprises maintaining a support for the workpiece in the chamber at an elevated temperature.4. The method of claim 3 , wherein the temperature of the tungsten film is raised before establishing the pressure in the chamber of at least 5 atmospheres.5. The method of claim 1 , wherein establishing the pressure in the chamber comprises introducing the hydrogen gas and an inert gas to provide a gas mixture in the chamber.6. The method of claim 5 , wherein the hydrogen gas comprises at most 4.5% by volume percent of the gas mixture.7. The method of claim 6 , wherein the hydrogen gas comprises at least 1% by volume percent of the gas mixture.8. The method of claim 5 , wherein the tungsten film is exposed to the hydrogen gas while the hydrogen gas has a partial pressure of 1-10 bar.9. The method of claim 5 , wherein the inert gas comprises one or more of nitrogen or argon.10. The method of claim 1 , wherein the tungsten film is a portion of a 3D NAND in fabrication.11. A method of forming tungsten on a workpiece claim 1 , comprising:depositing a tungsten film on ...

Seam-healing method upon supra-atmospheric process in diffusion promoting ambient

Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.

METHODS OF PATTERNING A WAFER SUBSTRATE

Embodiments of the present disclosure provide for patterned substrates and methods of forming a patterned substrate, particularly a self-assembly pattern on a surface of a substrate, such as a host substrate, subsequently used in a chip to wafer (C2W) direct bonding process. In one embodiment, a method of patterning a substrate includes depositing a first material layer on a surface of a substrate, depositing a resist layer on the first material layer, patterning the resist layer to form a plurality of openings therethrough, transferring the pattern in the resist layer to the first material layer to form a plurality of self-assembly regions each comprising a hydrophilic assembly surface, and removing the resist layer to expose one or more hydrophobic bounding surfaces. Herein, the first material layer comprises a hydrophobic material. 1. A method of patterning a substrate , comprising:depositing a first material layer on a substrate, wherein the first material layer comprises a hydrophobic surface;depositing a resist layer on the first material layer;patterning the resist layer to form a plurality of openings therein;transferring the pattern in the resist layer to the first material layer to form a plurality of self-assembly regions each comprising a hydrophilic assembly surface; andremoving the resist layer to expose one or more hydrophobic surfaces bounding individual ones of the plurality of self-assembly regions.2. The method of claim 1 , further comprising depositing a second material layer on the substrate before depositing the first material layer.3. The method of claim 1 , wherein transferring the pattern in the resist layer to the first material layer comprises only partially extending the plurality of openings formed through the resist layer into the first material layer to form the plurality of self-assembly regions.4. The method of claim 1 , wherein the resist layer is removed using a solvent comprising an alkane claim 1 , an aromatic claim 1 , a ketone ...

FORMATION OF CRYSTALLINE, LAYERED TRANSITION METAL DICHALCOGENIDES

Embodiments of the present disclosure relate to forming a two-dimensional crystalline dichalcogenide by positioning a substrate in an annealing apparatus. The substrate includes an amorphous film of a transition metal and a chalcogenide. The film is annealed at a temperature from 500° C. to 1200° C. In response to the annealing, a two-dimensional crystalline structure is formed from the film. The two-dimensional crystalline structure is according to a formula MX, M includes one or more of molybdenum (Mo) or tungsten (W) and X includes one or more of sulfur (S), selenium (Se), or tellurium (Te). 1. A method for substrate processing , comprising:positioning a substrate in an annealing apparatus, wherein the substrate comprises an amorphous film of a transition metal and a chalcogenide;annealing the amorphous film at a temperature from 500° C. to 1200° C.; and{'sub': '2', 'forming, in response to the annealing, a two-dimensional crystalline structure from the amorphous film, wherein the two-dimensional crystalline structure is according to a formula MX, and wherein M comprises molybdenum (Mo) or tungsten (W) and X comprises sulfur (S), selenium (Se), or tellurium (Te).'}2. The method of claim 1 , wherein the substrate comprises a metal claim 1 , a semiconductor claim 1 , a polymer claim 1 , an inorganic oxide claim 1 , a metal oxide claim 1 , a metal sulfide claim 1 , a metal selenide claim 1 , an inorganic sulfide claim 1 , graphene claim 1 , an inorganic selenide claim 1 , or combinations thereof.3. The method of claim 1 , wherein the two-dimensional crystalline structure comprises a plurality of monolayers.4. The method of claim 1 , wherein the annealing further comprises annealing in an atmosphere comprising argon (Ar) and nitrogen (N).5. The method of claim 1 , wherein the annealing further comprises exposing the amorphous film to hydrogen sulfide (HS) and hydrogen selenide (HSe).6. The method of claim 1 , where the amorphous film comprises a thickness from 0.5 nm ...

SELECTIVE OXIDATION FOR 3D DEVICE ISOLATION

Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure is oxidized by a high pressure oxidation process to form a buried oxide layer adjacent the substrate. 1. A semiconductor process method , comprising: a first material layer;', 'a second material layer; and', 'a third material layer;, 'forming a superlattice structure on a substrate, wherein the superlattice structure comprisespatterning the superlattice structure;etching the superlattice structure; andperforming an oxidation process to oxidize at least one of the first material layer, the second material layer, or the third material layer to form a buried oxide layer, wherein the oxidation process is performed at a pressure of greater than about 30 bar.2. The method of claim 1 , wherein the oxidation process is performed at a temperature of between about 300° and about 400° C.3. The method of claim 1 , wherein a duration of the oxidation process is between about 10 minutes and about 20 minutes.4. The method of claim 1 , wherein the first material layer and the second material layer are disposed within the superlattice structure in an alternating stacked arrangement.5. The method of claim 4 , wherein the second material layer comprises about 70% silicon and about 30% germanium claim 4 , and the third material layer comprises about 30% silicon and about 70% germanium.6. The method of claim 5 , wherein the second material layer is disposed on the substrate and the third material layer is disposed on the second material layer.7. The method of claim 1 , wherein the substrate and the first material layer comprise a silicon containing material.8. The method of claim 1 , further comprising: ...

Improved self-assembled monolayer blocking with intermittent air-water exposure

Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.

Improved self-assembled monolayer blocking with intermittent air-water exposure

Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.

Methods for fabricating nanowire for semiconductor applications

The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer, maintaining a process pressure at greater than 5 bar, and selectively forming an oxidation layer on the second group of sidewalls in the second layer.

High-pressure annealing and reducing wet etch rates

Methods are described for reducing the wet etch rate of dielectric films formed on a patterned substrate by flowing the material into gaps during deposition. Films deposited in this manner may initially exhibit elevated wet etch rates. The dielectric films are treated by exposing the patterned substrate to a high pressure of water vapor in the gas phase. The treatment may reduce the wet etch rate of the dielectric films, especially the gapfill portion of the dielectric film. Scanning electron microscopy has confirmed that the quantity and/or size of pores is reduced or eliminated by the procedures described herein. The treatment has also been found to reduce the etch rate, e.g., at the bottom of gaps filled with the dielectric film.

高圧処理チャンバ用のガス供給システム

【課題】高圧処理チャンバ用のガス供給システムを提供する。【解決手段】高圧処理システム２００は、第１のチャンバ２０２と、第１のチャンバに隣接した第２のチャンバ２０４と、第２のチャンバからガスを除去するフォアラインと、第２のチャンバ内の圧力を真空近くまで低下させる真空処理システム２０８と、第１のチャンバ内の圧力を第２のチャンバ内の圧力から分離させるバルブアセンブリ２１２と、第１のチャンバへガスを導入して、第１のチャンバ内の圧力を少なくとも１０気圧まで上昇させるガス供給システム２０６と、第１のチャンバからガスを除去する排気ラインと、ガス供給システム及び排気ラインの一部を囲み、ガス供給システム及び排気ラインの一部から漏洩しているガスをフォアラインへそらす格納エンクロージャと、を含む。【選択図】図２

Gas delivery system for high pressure processing chamber

A high-pressure processing system comprising a first chamber having inner walls; a support to hold a substrate in the first chamber; a second chamber surrounding the first chamber, the second chamber being defined by a volume between the inner walls of the first chamber and outer walls; a valve assembly for isolating the first chamber from the second chamber, the valve assembly comprising a slit extending through a first wall of the inner walls and configured to allow the substrate to be moved in and out of the first chamber, and an arm extending through the slit, the arm comprising an internal gas channel configured for a cooling gas flow through the arm, wherein the arm of the valve assembly further extends through an aperture in the outer walls, and is configured to be moved relative to the inner walls of the first chamber to a position in which the arm forms a seal to isolate the first chamber from the second chamber.

Improved self-assembled monolayer blocking with intermittent air-water exposure

Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.

Improved self-assembled monolayer blocking with intermittent air-water exposure

Cluster processing system for forming a metal containing material

Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a two-dimensional transition metal dichalcogenide layer on a substrate in a first processing chamber disposed in a cluster processing system, thermally treating the two-dimensional transition metal dichalcogenide layer to form a treated metal layer in a second processing chamber disposed in the cluster processing system, and forming a capping layer on the treated metal layer in a third processing chamber disposed in the cluster processing system.

Tungsten defluorination by high pressure treatment

高圧処理チャンバ用のガス供給システム

【課題】高圧チャンバを有するプラットフォームにおいて、各チャンバ内で様々な圧力環境を維持する高圧処理システム及び装置を提供する。【解決手段】高圧処理システム２００は、第１のチャンバ２０２と、第１のチャンバに隣接した第２のチャンバ２０４と、第２のチャンバからガスを除去するフォアラインと、第２のチャンバ内の圧力を真空近くまで低下させるように構成された真空処理システム２０８と、第１のチャンバ内の圧力を第２のチャンバ内の圧力から分離させるバルブアセンブリ２１２と、第１のチャンバへガスを導入して、第１のチャンバ内の圧力を少なくとも１０気圧まで上昇させるガス供給システム２０６と、第１のチャンバからガスを除去する排気ラインと、ガス供給システム及び排気ラインの一部を囲み、ガス供給システム及び排気ラインの一部から漏洩しているガスをフォアラインへそらす格納エンクロージャと、を含む。【選択図】図２

Selective deposition of metal oxide by pulsed chemical vapor deposition

Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contain different types of metals which are selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

Selective deposition of metal oxide by pulsed chemical vapor deposition

Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

Selective deposition of metal oxide by pulsed chemical vapor deposition

Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate, In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non- passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contain different types of metals which are selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

Gas delivery system for high pressure processing chamber

A high-pressure processing system comprising a first chamber having inner walls; a support to hold a substrate in the first chamber; a second chamber surrounding the first chamber, the second chamber being defined by a volume between the inner walls of the first chamber and outer walls; a valve assembly for isolating the first chamber from the second chamber, the valve assembly comprising a slit extending through a first wall of the inner walls and configured to allow the substrate to be moved in and out of the first chamber, and an arm extending through the slit, the arm comprising an internal gas channel configured for a cooling gas flow through the arm, wherein the arm of the valve assembly further extends through an aperture in the outer walls, and is configured to be moved relative to the inner walls of the first chamber to a position in which the arm forms a seal to isolate the first chamber from the second chamber.

Gas delivery system for high pressure processing chamber

A high-pressure processing system includes a first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second, a valve assembly to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to introduce a gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres, an exhaust line to remove gas from the first chamber, and a containment enclosure surrounding a portion of the gas delivery system and the exhaust line to divert gas leaking from the portion of the gas delivery system and the exhaust line to the foreline.

Gas delivery system for high pressure processing chamber

A high-pressure processing system includes a first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second, a valve assembly to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to introduce a gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres, an exhaust line to remove gas from the first chamber, and a containment enclosure surrounding a portion of the gas delivery system and the exhaust line to divert gas leaking from the portion of the gas delivery system and the exhaust line to the foreline.

Selective oxidation for 3d device isolation

Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure is oxidized by a high pressure oxidation process to form a buried oxide layer adjacent the substrate.

Selective deposition of metal oxide by pulsed chemical vapor deposition

Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

High selectivity atomic layer deposition process

Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.

高圧処理によるタングステンの脱フッ素化

【課題】半導体ウエハ等の加工対象物上に堆積したタングステン膜の欠陥密度を低減させる処理方法を提供する。【解決手段】加工対象物上のタングステン膜を処理するためのプロセスに関連した方法及びシステムであって、該プロセスが、チャンバ内で加工対象物を支持すること、チャンバの中に水素ガスを導入すること、少なくとも５気圧の圧力を確立すること、及び、チャンバ内の圧力が少なくとも５気圧である間に、加工対象物上のタングステン膜を水素ガスに曝露することを含む。【選択図】図１

高圧処理によるタングステンの脱フッ素化

【課題】半導体ウェハ等の加工対象物上に堆積したタングステン膜の欠陥密度を低減させる処理方法及びアニーリングシステムを提供する。【解決手段】加工対象物上のタングステン膜を処理するためのプロセスに関連した方法であって、該プロセスが、チャンバ内で加工対象物を支持すること、チャンバの中に水素ガスを導入すること、少なくとも５気圧の圧力を確立すること及びチャンバ内の圧力が少なくとも５気圧である間に、加工対象物上のタングステン膜を水素ガスに曝露することを含む。【選択図】図２

Tungsten defluorination by high pressure treatment

An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.

Tungsten defluorination by high pressure treatment

Methods and systems relating to processes for treating a tungsten film on a workpiece including supporting the workpiece in a chamber, introducing hydrogen gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the tungsten film on the workpiece to the hydrogen gas while the pressure in the chamber is at least 5 atmospheres.

Tungsten defluorination by high pressure treatment

Methods and systems relating to processes for treating a tungsten film on a workpiece including supporting the workpiece in a chamber, introducing hydrogen gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the tungsten film on the workpiece to the hydrogen gas while the pressure in the chamber is at least 5 atmospheres.

High pressure treatment of silicon nitride film

Methods and systems relating to processes for treating a silicon nitride film on a workpiece including supporting the workpiece in a chamber, introducing an amine gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the silicon nitride film on the workpiece to the amine gas while the pressure in the chamber is at least 5 atmospheres.

High pressure treatment of silicon nitride film

Improved self-assembled monolayer blocking with intermittent air-water exposure

Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.

Seam-healing method upon supra-atmospheric process in diffusion promoting ambient

Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.

Seam-healing method upon supra-atmospheric process in diffusion promoting ambient

Improved self-assembled monolayer blocking with intermittent air-water exposure

Contact construction for semiconductor devices with low-dimensional materials

Two-dimensional (2D) materials formed in very thin layers improve the operation of semiconductor devices. However, forming a contact on 2D material tends to damage and penetrate the 2D material. A relatively gentle etch process has been developed that is very selective to the 2D material and allows vertical holes to be etched down to the 2D material without damaging or penetrating the 2D material. A low-power deposition process forms a protective liner when performing the metal fill to further prevent damage to the 2D material when forming the metal contacts in the holes. These processes allow a vertical metal contact to be formed on a planar 2D material or a vertical sidewall contact be formed in a 3D NAND without damaging the 2D material. This increases the contact area, reduces the contact resistance, and improves the performance of the 2D material in the device.

Contact construction for semiconductor devices with low-dimensional materials

Two-dimensional (2D) materials formed in very thin layers improve the operation of semiconductor devices. However, forming a contact on 2D material tends to damage and penetrate the 2D material. A relatively gentle etch process has been developed that is very selective to the 2D material and allows vertical holes to be etched down to the 2D material without damaging or penetrating the 2D material. A low-power deposition process forms a protective liner when performing the metal fill to further prevent damage to the 2D material when forming the metal contacts in the holes. These processes allow a vertical metal contact to be formed on a planar 2D material or a vertical sidewall contact be formed in a 3D NAND without damaging the 2D material. This increases the contact area, reduces the contact resistance, and improves the performance of the 2D material in the device.