СПОСОБ ПОЛУЧЕНИЯ ХЛОРДИАЛКОКСИДОВ ИНДИЯ

Настоящее изобретение относится к способу получения галогендиалкоксидов индия (III) общей формулы InX(OR)с Х=F, Cl, Br, I и R = алкильный остаток, алкилоксиалкильный остаток. Способ включает взаимодействие композиции (А), включающей тригалогенид индия InX, где Х=F, Cl, Br и/или I и, по меньшей мере, один спирт общей формулы ROH, где R = алкильный остаток, алкилоксиалкильный остаток с, по меньшей мере, одним вторичным амином общей формулы R'NH, где R' = алкильный остаток. Изобретение позволяет снизить содержание хлора в целевом продукте. 7 з.п. ф-лы, 1 ил., 1 пр.

Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung

ORGANISCHES LUMINESZENTES ELEMENT UND SEIN SUBSTRAT

ORGANISCHES LUMINESZENTES ELEMENT UND SEIN SUBSTRAT

Elektrolumineszierende Anordnung von Verbindungshalbleitern.

Free-standing gallium nitride semiconductor substrate useful in light emitting device, comprises free standing compound semiconductor crystal based on nitride

The free-standing gallium nitride semiconductor substrate useful in light emitting device, comprises free standing compound semiconductor crystal based on nitride, which has a variation of the lattice constant of +-12 ppm. The variation of the lattice constant comprises a variation of the measured a-axis-length and a variation of the total measured lattice constant in the level of an area with exception of a part outwardly reaching from an extreme circumference in a direction of substrate radius of 2 mm. An independent claim is included for a light- emitting device.

Halbleiterkörper und Halbleiterchip mit einem Halbleiterkörper

Es wird ein Halbleiterkörper (2), der eine Halbleiterschichtenfolge mit einem zur Strahlungserzeugung geeigneten aktiven Bereich (3) umfasst, angegeben, wobei die Halbleiterschichtenfolge zwei Kontaktschichten (6, 7) umfasst, zwischen denen der aktive Bereich angeordnet ist, den Kontaktschichten jeweils eine auf dem Halbleiterkörper angeordnete Anschlussschicht (12, 13) zugeordnet ist, die jeweilige Anschlussschicht mit der zugeordneten Kontaktschicht elektrisch leitend verbunden ist, die jeweilige Anschlussschicht auf der von dem aktiven Bereich abgewandten Seite der zugeordneten Kontaktschicht angeordnet ist, die Anschlussschichten für die in dem aktiven Bereich zu erzeugende Strahlung durchlässig sind, und die Kontaktschichten vom gleichen Leitungstyp sind.

Elektrodenstruktur eines Verbindungshalbleiter-Bauelements

Verfahren zum Herstellen einer transparenten Elektrode

Ein Verfahren zum Herstellen einer transparenten Elektrode, die eine Elektrode für ein lichtemittierendes Halbleiterbauelement bildet, die auf einer Oberfläche eines Halbleiters ausgebildet ist, der einen Verbund auf Basis von p-leitendem Galliumnitrid umfasst, zusammen mit einer Drahtbondingelektrode, mit der die transparente Elektrode elektrisch verbunden ist, gekennzeichnet durch Ausbilden einer ersten Schicht auf der Oberfläche des Halbleiters, die aus einem Metall besteht, das aus der Gruppe gewählt wird, die aus Gold (Au), Platin (Pt) und Palladium (Pd) oder einer Legierung von zwei oder drei dieser Elemente besteht, durch Ausbilden einer zweiten Schicht auf der ersten Schicht, die aus zumindest einem Metall besteht, das aus der Gruppe gewählt wird, die aus Nickel (Ni), Titan (Ti), Zinn (Sb), Chrom (Cr), Kobalt (Co), Zink (Zn), Kupfer (Cu), Magnesium (Mg) und Indium (In) besteht, und Wärmebehandeln der ersten Schicht und der zweiten Schicht in einer Sauerstoff enthaltenden Atmosphäre ...

OPTOELEKTRONISCHES BAUELEMENT, PIXEL, DISPLAYANORDNUNG UND VERFAHREN

Elektrolumineszenzanzeige mit aktiver Matrix mit zwei TFTs und Speicherkondensator pro Bildelement

Licht emittierendes Bauteil

Licht emittierendes Bauteil mit: – einem Substrat (10); – einem auf dem Substrat (10) hergestellten n-Nitrid-Halbleiterstapel (12); – einer auf dem n-Nitrid-Halbleiterstapel (12) hergestellten Licht emittierenden Nitridschicht (13); – einem auf der Licht emittierenden Nitridschicht (13) hergestellten p-Nitrid-Halbleiterstapel (14) mit einer Anzahl von Sechseckpyramiden-Vertiefungen (141), die sich von der Oberfläche des p-Nitrid-Halbleiterstapels (14), die von der Licht emittierenden Nitridschicht (13) abgewandt ist, nach unten erstrecken; und – einer ersten transparenten, leitenden Oxidschicht (15), die auf dem p-Nitrid-Halbleiterstapel (14) ausgebildet ist, wobei die Sechseckpyramiden-Vertiefungen (141) des p-Nitrid-Halbleiterstapels (14) mit der ersten transparenten, leitenden Oxidschicht (15) aufgefüllt sind, wobei der Brechungsindex der transparenten, leitenden Oxidschicht (15) zwischen dem Brechungsindex des p-Nitrid-Halbleiterstapels (14) und dem Brechungsindex eines Gehäusematerials ...

LED und LED-Array mit einer jeweiligen Kleberschicht

LED mit einer Kleberschicht (13), mit: einem Substrat (10) mit hoher Wärmeabfuhr; einer auf dem Substrat (10) mit hoher Wärmeabfuhr gebildeten elektrisch isolierenden Schicht (111); einer auf der elektrisch isolierenden Schicht (111) ausgebildeten Kleberschicht (13); einem auf der elektrisch isolierenden Schicht (111) hergestellten LED-Stapel (17 bis 21); und einer Vielzahl von Wärmepfad-Erhebungen, die zwischen dem Substrat (10) mit hoher Wärmeabfuhr und der elektrisch isolierenden Schicht (111) ausgebildet sind, wobei ein Teil der Wärmepfad-Erhebungen die Kleberschicht (13) vollständig durchdringen, und wobei das Substrat (10) mit hoher Wärmeabfuhr aus Metall besteht.

Light emitting device having heat-dissipating element

A light emitting device (e.g. a GaN based III-V nitride device) having a heat dissipating element is provided. The device includes an active layer 160b between first and second material layers for inducing laser emission, a first electrode 154 contacting the lowermost layer 152 of the first material layers, a second electrode contacting the uppermost layer 164 of the second material layers, and a heat dissipating element in contact with the lowermost layer 152. The heat dissipating element is a thermal conductive layer 156 which contacts a region of the lowermost layer 152, while a substrate 150 is present on the remaining region of the lowermost layer 152. The thermal conductive layer may contact the lowermost layer 152 through one or more via holes formed in the substrate. A dent extending into the lowermost layer 152 may also be formed along with the via hole (figure 10).

Monolithic LED array and a precursor thereto

A monolithic LED array precursor with a plurality of LED structures is disclosed comprising: a 1st semiconductor layer shared by the LED structures; 2nd, 3rd and 4th semiconductor layer sequentially stacked on the 1st semiconductor layer and having a trapezoidal cross-section such that they have sloped sides, the sides being preferably parabolic or approximating a Bezier curve; an electrical contact 320 on the 4th semiconductor layer; electrically insulating, transparent spacers 300 on the sides of the 4th semiconductor layer; a reflective electrically conducting layer disposed over the spacers. The 3rd sub-layer has a plurality of quantum well-sublayers. The 2nd semiconductor layer may be formed by selectively masking or selectively treating the 1st semiconductor layer. The primary contact may be a transparent conducting oxide with a convex external surface, which may have a reflective electrically conducting layer disposed thereon.

SCHIRMELEKTRODEN

LICHTEMITTIERENDES SEMICONDUCTOR ELEMENT

LICHTEMITTIERENDES SEMICONDUCTOR ELEMENT AND ASSOCIATED PRODUCTION PROCEDURE

IMPROVED WINDOW FOR GAN-LED

LIGHT WITH ANIMAL END OF SEMICONDUCTOR DEVICE WITH METAL SUBSTRATE

SCHIRMELEKTRODEN

P-TYPE-SEMICONDUCTOR, PROCEDURE FOR ITS PRODUCTION, SEMICONDUCTOR ARRANGEMENT, PHOTOVOLTAI ELEMENT, AND PROCEDURE FOR THE PRODUCTION OF A SEMICONDUCTOR ARRANGEMENT

LIGHT EMITTING DIAMOND DEVICE

Improved window for gan led

Light-emitting diode electrode geometry

HIGH-RELIABILITY GROUP III-NITRIDE LIGHT EMITTING DIODE

LIGHT EMITTING DEVICE

A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 .OMEGA..cndot.cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.

COMPOSITION FOR FORMING A TRANSPARENT CONDUCTIVE FILM

OPTICALLY TRANSMISSIVE SCREENING ELECTRODE

In synthetic resin-sealed optocouplers, undesired field effects occur when high voltages are connected between the transmitter and the receiver. Such field effects can be eliminated by the provision of optically transmissive screening electrodes on the oxide frame of the collector-base diode and the base-emitter diode. As screening electrode material it is advisable to use polysilicon in a layer thickness such that the reflection at this layer of the optical radiation employed is minimised.

STRUCTURE OF P-ELECTRODE AT THE LIGHT-EMERGING SIDE OF LIGHT-EMITTING DIODE

A structure of a p-electrode formed at the light-emerging side of an LED that comprises (a) an n-type semiconductor substrate, (b) an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type contact layer formed on the substrate in this order, and (c) an n-electrode formed on the back face of the substrate. The structure of the p-electrode comprises a mesh-shaped semi- transparent thin-film metal electrode for diffusing electric current formed on the p-type contact layer and a bonding electrode for wire bonding. The metal electrode comprises a covering portion having a transmittance of at least 10% and an opening portion having an opening ratio of at least 20%. The bonding electrode is formed at the periphery of the p-type contact layer and is bonded directly to the mesh-shaped semi-transparent thin-film metal electrode. This structure can increase the intensity of the output light emerging from the p- side.

Transparent ohmic contacts on light emitting diodes with carrier substrates

A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bondingsystem joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure.

Preparation technological method for improving luminous efficiency of LED chip

Series connection PN junction emitting diode

Semiconductor light emitting device and method for manufacturing the same

According to one embodiment, a semiconductor light emitting device includes first and second conductive layers, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting part. The second semiconductor layer is provided between the first conductive layer and the first semiconductor layer. The light emitting part is provided between the first and second semiconductor layers. The second conductive layer is in contact with the second semiconductor layer and the first conductive layer between the second semiconductor layer and the first conductive layer. The first and second conductive layers are transmittable to light emitted from the light emitting part. The first conductive layer includes a polycrystal having a first average grain diameter. The second conductive layer includes a polycrystal having a second average grain diameter of 150 nanometers or less and smaller than the first average grain diameter.

Light emitting diode

The light emitting diode chip

Gallium nitride-based compound semiconductor multilayer structure and production method thereof

LED chip preparation method and LED chip

The invention provides an LED chip preparation method and an LED chip, and the method comprises the steps: 1, providing an epitaxial wafer, etching a first specified pattern on the epitaxial wafer, depositing a current blocking layer on the epitaxial wafer, and carrying out the photoetching of the current blocking layer, so that the shape of the current blocking layer is a second specified pattern, and obtaining a first semi-finished chip; 2, growing a copper grid transparent electrode on the first semi-finished chip, and enabling the shape of the copper grid transparent electrode to be a third specified pattern to obtain a second semi-finished chip; 3, photoetching a metal electrode pattern on the second semi-finished chip according to a fourth specified pattern, and evaporating a P metal electrode and an N metal electrode on the second semi-finished chip according to the metal electrode pattern to obtain a third semi-finished chip; and 4, growing an insulating layer on the third semi-finished ...

Light emitting diode with improved reliability and preparation method thereof

The invention provides a light emitting diode with improved reliability and a preparation method thereof, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises a substrate, an epitaxial layer, a current blocking layer, a transparent conductive layer and a first electrode, wherein the epitaxial layer and the current blocking layer are sequentially stacked on a bearing surface of the substrate; the surface, far away from the substrate, of the current blocking layer is provided with a groove, and the transparent conductive layer is located on the surface, far away from the substrate, of the epitaxial layer, the surface of the current blocking layer and in the groove; the first electrode is located on the transparent conductive layer, and at least part of the first electrode is located in the groove. The contact area of the electrode and the transparent conductive layer can be increased, and the connection reliability of the electrode and the ...

ELECTROLUMINESCENT SEMICONDUCTOR DEVICE

Use of a composition comprising diethylzinc and aryl compound, in chemical vapor deposition process for depositing zinc oxide film such as conductive transparent oxide film, which is useful to manufacture flat panel display

Utilisation d'une composition comprenant du diéthylzinc et un composé X choisi parmi les composés de formule (III) : R1 représente indépendamment un hydrogène, un radical alkyle, un radical oléfine conjugué avec le noyau aromatique, un radical aryle substitué ou non chacun ayant de 1 à 12 atomes de carbone dans un procédé de dépôt d'un film d'oxyde de zinc.

Light emitting device

SEMICONDUCTOR LIGHT EMITTING ELEMENT

Nitride semiconductor light emitting device

GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME

Light emitting device and method for fabricating the same

발광 다이오드

... 본 발명은 발광 다이오드에 관한 것으로, 본 발명의 일 실시예에 따른 발광 다이오드는, 기판; 상기 기판 상에 위치하는 제1 도전형 반도체층, 상기 제1 도전형 반도체층 상에 위치하는 제2 도전형 반도체층 및 상기 제1 도전형 반도체층 및 제2 도전형 반도체층 사이에 개재된 활성층을 포함하는 발광구조체; 상기 제2 도전형 반도체층 상에 형성된 투명전극층; 상기 제1 도전형 반도체층의 상부면에 접하고, 상기 기판의 제1 모서리 측에 배치된 제1 전극 패드; 상기 투명전극층 상에 형성되고, 상기 제1 모서리와 대향된 상기 기판의 제2 모서리 측에 배치된 제2 전극 패드; 상기 제1 전극 패드에서 연장된 하나 이상의 제1 연장부; 및 상기 제2 전극 패드에서 연장된 하나 이상의 제2 연장부를 포함한다. 본 발명에 의하면, 제1 및 제2 전극 패드를 기판의 대각 위치에 서로 대향하도록 배치하여 기판의 모서리 측에서 발광되지 않는 영역을 줄여 발광 다이오드의 발광 효율을 높일 수 있는 효과가 있다.

LIGHT EMITTING DIODE HAVING ELECTRODE PADS

... 전극패드들을 갖는 발광 다이오드가 개시된다. 이 발광 다이오드는, 기판, 상기 기판 상에 위치하고, 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 포함하는 발광 구조체, 상기 발광 구조체로부터 고립되고, 제1 도전형 반도체층을 포함하는 전극 패드 영역, 상기 발광 구조체의 제1 도전형 반도체층에 전기적으로 접속된 제1 전극 패드, 상기 전극 패드 영역의 상기 제2 도전형 반도체층 상에 위치하는 제2 전극 패드, 및 상기 제2 전극패드에 연결되어 상기 발광 구조체의 제2 도전형 반도체층에 전기적으로 접속된 적어도 하나의 상부 연장부를 포함한다. 제2 전극패드가 위치하는 전극 패드 영역이 발광 구조체로부터 고립되기 때문에, 제2 전극패드 근처에 전류가 밀집되는 것을 방지할 수 있다.

초소형 LED 및 조명 구조체 형성 프로세스

... 가요성 광 시트는 가요성 기판 상부에 위치한 하부 도체 층을 포함한다. 수직 발광 다이오드(VLED)의 어레이는 하부 도체 층 위에 잉크로서 프린팅되어 VLED의 하부 전극은 하부 도체 층과 전기적으로 접촉한다. VLED의 상부 전극은 제 1 투명 도체 층으로 형성되고, 임시 소수성 층은 제 1 투명 도체 층 위에 형성된다. 유전체 재료는 VLED들 사이에 증착되지만 소수성 층을 자동으로 디웨팅한다. 소수성 층이 또한 제거되고, 제 2 투명 도체 층은 VLED의 상부 전극과 전기적으로 접촉하도록 증착된다. VLED는 상부 금속 범프 전극이 사용되지 않기 때문에 직경이 10 마이크론 미만으로 만들어질 수 있다. VLED는 하부 도체 층과 제 2 투명 도체 층 사이의 전압 차동에 의해 조명된다.

발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템

... 실시예에 따른 발광 소자는 언도프트 영역, 상기 언도프트 영역의 내측에 형성되는 제1 도전영역 및 상기 언도프트 영역의 외측에 형성되는 제2 도전영역을 포함하는 전도성 지지부재; 상기 전도성 지지부재 상에 제1 도전형 반도체층, 활성층, 제2 도전형 반도체층을 포함하고, 상기 제2 도전형 반도체층이 상기 전도성 지지부재와 전기적으로 연결되는 발광부; 상기 발광부 상에 상기 제1 도전형 반도체층과 연결되는 제1 전극; 상기 전도성 지지부재 상에 제1 도전형 반도체층, 활성층, 제2 도전형 반도체층을 포함하고, 상기 발광부와 이격되는 정전기 보호부; 및, 일단이 상기 정전기 보호부의 제1 도전형 반도체층과 접하고 타단이 상기 전도성 지지부재의 제1 도전영역과 접하는 제2 전극;을 포함한다.

Luminescence device and Method of manufacturing the same

DISPLAY DEVICE

HIGH-EFFICIENCY LIGHT EMITTING DIODE

According to an embodiment of the present invention, a light emitting diode comprises: a light emitting structure including a first conductive semiconductor layer, an active layer arranged on top of the first conductive semiconductor layer, a second conductive semiconductor layer arranged on top of the active layer, and multiple contact holes which penetrate the active layer and second conductive semiconductor layer to expose the first conductive semiconductor layer; a second electrode arranged on top of the second conductive semiconductor layer while being electrically connected to the second conductive semiconductor layer; a first insulation layer including first openings arranged on top of the light emitting structure to partially expose the first conductive semiconductor layer which is exposed by the contact holes, and second openings which partially expose the second electrode; a first electrode arranged on the first insulation layer and on the first conductive semiconductor layer; ...

Semiconductor Light Emitting Diode Comprising Uneven Substrate

High resolution display device

LIGHT EMITTING DIODE HAVING ELECTRODE EXTENSIONS

A light emitting diode having electrode extensions is disclosed. The light emitting diode includes a lower contact layer having a first edge, a second edge facing the first edge, a third edge connecting the first edge to the second edge, and a fourth edge facing the third edge, a mesa structure disposed on the lower contact layer, and including an active layer and an upper contact layer, a first electrode pad disposed adjacently to the first edge, a second electrode pad disposed adjacently to the second edge, first and second lower extensions extending from the first electrode pad to the second edge, and having ends thereof spaced farther apart from each other as compared to front ends thereof in contact with the first electrode pad, and first to third upper extensions extending from the second electrode pad. The first and second upper extensions extend from the second electrode pad to surround the first and second lower extensions. The third upper extension extends to a region between ...

LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF, HAVING A REFLECTING LAYER HAVING A PLURALITY OF INSULATING LAYERS LAMINATED THEREIN

PURPOSE: A light emitting device and fabrication method thereof are provided to improve radiation efficiency and reflection angle by increasing the amount of light from the side of the light emitting diode through a DBR(Distributed Bragg Reflector) reflecting layer. CONSTITUTION: In a light emitting device and fabrication method thereof, an N type semiconductor layer(220) is formed on a substrate(100). An active layer(240) is formed on the N type semiconductor layer. A P-type semiconductor layer(260) is formed on the active layer. A P-type electrode pad(340) is formed on the p-type semiconductor layer. A reflecting layer(360) is formed in the edge of a transparent electrode and in the top side of the exposed P type semiconductor layer. COPYRIGHT KIPO 2012 ...

Nitride semiconductor structure

A nitride semiconductor structure is provided. The nitride semiconductor structure includes a substrate, a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer and a contact layer. The first nitride semiconductor layer is disposed on the substrate. The active layer is disposed on the first nitride semiconductor layer. The second nitride semiconductor layer is disposed on the active layer. The second nitride semiconductor layer has a rough surface far from the active layer. The first nitride semiconductor layer and the second nitride semiconductor layer have different conductivity types. The contact layer is disposed on the rough surface of the second nitride semiconductor layer. The contact layer includes a first transparent contact material and a second transparent contact material. The first transparent contact material is between the second nitride semiconductor layer and the second transparent contact material.

Compound semiconductor light-emitting element and manufacturing method thereof

An object of the present invention is to provide a compound semiconductor light-emitting element having good yield in the manufacturing process and outstanding light-emitting output. The compound semiconductor light-emitting element of the present invention is characterized in that an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are so laminated that the light-emitting layer is sandwiched between the n-type semiconductor and the p-type semiconductor, in the light-emitting element provided with a first conduction-type transparent electrode and a second conduction-type electrode, the first conduction-type transparent electrode consists of an IZO film comprising In2O3 crystal with Bixbyite structure.

Semiconductor light-emitting device

The luminous efficiency of an LED is improved. Disclosed is a light-emitting device (11) comprising a light-emitting layer (16) which is composed of a GaN semiconductor and interposed between an n-type GaN semiconductor layer (17) and a p-type GaN semiconductor layer (15). The light-emitting device (11) further comprises a transparent electrode layer (14) composed of ZnO or ITO.

Light-emitting device using multilayer composite metal plated layer as flip-chip electrode

The present invention relates to a light-emitting device using multilayer composite metal plated layer as flip-chip electrode, and more particularly to a LED using a transparent conducting layer and a metal with high index of reflection as a flip-chip electrode to enhance light-emitting efficiency. The device includes a transparent substrate; and a layer of group III nitride compound semiconductor die structure laminated on the transparent substrate and bonded with an interposer in a submount by flip-chip means. The device is characterized in having a flip-chip electrode composed of multilayer composite metal plated layers containing a current-spreading transparent conducting layer formed on a surface of a second type semiconductor layer; a metal reflective layer with high index of reflection formed on a surface of the transparent conducting layer; a barrier layer preventing metal diffusion formed on a surface of the metal reflective layer; and a bonding layer connected with an interposer ...

Display unit

The present invention relates to a display unit making use of current driven luminous element, characterized in adapting the driving method taking into consideration of TFT conductive type which controls the light emission of the luminous operating of the luminous element, not only lowering the voltage of and improving the display quality of the driving voltage, but when the second TFT (30) performing supply and cut driven current to the luminous element (40) is N channel type, a high gate voltage (V g cur) can be obtained by lowering the electric potential of the common feeder with reference to the electric potential of external electrode (OP) of the luminous element (40). In this case, when the first TFT (20) connected to the gate of second TFT (30) is made to be P channel and the potential of glowing potential holding electrode (st) is made as the reference, the lower potential of the scanning signal (S gate) and the potential of common feeder (com) is made to have the same polarity ...

Nitride semiconductor device and manufacturing method thereof

The present invention provides a nitride semiconductor device and manufacturing method thereof, which provides a p-type silicon substrate 1 doped with p-type dopant and having sufficient conductivity; the method includes steps of sequentially growing a buffer area 3 composed of n-type AlInGaN, a n-type nitride semiconductor layer 13 composed of n-type GaN, an active layer 14, and an epitaxy of p-type nitride semiconductor layer 15 composed of p-type GaN on the substrate 1; generating a low resistance p-type diffusion area 1a using III-group element Ga in the diffusion buffer area 3 on the p-type silicon substrate 1; and also generating the interface state assisting the carrier transmission of the p-type silicon substrate 1 at the hetero junction portion at the p-type silicon substrate 1 and the n-type buffer area 3 composed of n-type AlInGaN. The present invention can improve the carrier transmission efficiency toward the n-type buffer area 3 for the silicon substrate 1 with the interface ...

NANOWIRE STRUCTURE AND METHOD FOR PRODUCING SUCH A STRUCTURE

A method for producing a structure (100) comprising a membrane (3) made of a first material, in particular of indium-tin oxide, in contact with receiving ends (13) of a plurality of nanowires (1), the method comprising the following steps: - shaping a nanowire device (10) comprising the receiving ends (13), the receiving ends being shaped so as to form flat surfaces, - placing, in particular by transfer, a membrane device (3; 34) directly on the nanowires at the flat surfaces of the receiving ends of the membrane.

LED PACKAGE STRUCTURE HAVING FULLY TRANSPARENT ELECTRODE

An LED package structure having a fully transparent electrode, with an electrode layer (25) and protective layers (30) all being made of light-transmitting materials, and comprising a growth substrate (10), a plurality of chip units (20), a plurality of light-transmitting protective layers (30), a plurality of first light-transmitting connection layers (40), a plurality of second light-transmitting connection layers (50), a plurality of metal pads (60), and a reflective layer (70). In the present invention, the light emitted by an LED will not be blocked by a necessary electrode or a connection layer used for electrically connecting LEDs, thus achieving a perfect light-emitting effect.

METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE

The present disclosure relates to a method for manufacturing a semiconductor light-emitting device, the method comprising the steps of: providing a growth substrate on which a first semiconductor region, an active region, and a second semiconductor region are sequentially formed; bonding a first light-transmitting substrate to the second semiconductor region; removing the growth substrate from the first semiconductor region; attaching a second light-transmitting substrate to the first semiconductor region, from which the growth substrate has been removed, by using an adhesive layer; ablating the first light-transmitting substrate from the second semiconductor region by means of laser; exposing a portion of the first semiconductor region; and forming a first electrode of a flip chip and a second electrode of the flip chip in the exposed first semiconductor region and the second semiconductor region, respectively.

METHOD FOR STRUCTURING A TRANSPARENT CONDUCTIVE MATRIX COMPRISING SILVER NANO MATERIALS

The present invention refers to a method for selectively structuring of a polymer matrix comprising AgNWs (silver nano wires) or silver nano particles (Ag nano ink) or comprising mixtures of AgNWs and silver nano particles on a flexible plastic substructure or solid glass sheet. The method also includes a suitable etching composition, which allows to process the method in an industrial scale.

SEMICONDUCTOR LIGHT-EMITTING DEVICE

Disclosed is a semiconductor light-emitting device comprising: a hard substrate having one or more holes formed in the top and the bottom thereof; at least one semiconductor light-emitting device chip which is provided on the substrate and which includes an electrode; a pad which is formed a fixed distance apart from the electrode on a plane, and which is electrically connected to the outside through the holes of the substrate; an electrical connection which is electrically connected to the electrode of the at least one semiconductor light-emitting device chip, and which forms a connection between the pad and the electrode; and an encapsulant for covering the at least one semiconductor light-emitting device chip.

HIGHLY REFLECTIVE FLIP CHIP LED DIE

An LED die (40) includes an N-type layer (18), a P-type layer (22), and an active layer (20) epitaxially grown over a first surface of a transparent growth substrate (46). Light is emitted through a second surface of the substrate opposite the first surface and is wavelength converted by a phosphor layer (30). Openings (42, 44) are etched in the central areas (42) and along the edge (44) of the die to expose the first surface of the substrate (46). A highly reflective metal (50), such as silver, is deposited in the openings and insulated from the metal P-contact. The reflective metal may conduct current for the N- type layer by being electrically connected to an exposed side of the N-type layer along the inside edge of each opening. The reflective metal reflects downward light emitted by the phosphor layer to improve efficiency. The reflective areas provided by the reflective metal may form 10%-50% of the die area.

PATTERNS OF ELECTRICALLY CONDUCTING POLYMERS AND THEIR APPLICATION AS ELECTRODES OR ELECTRICAL CONTACTS

Electronic devices having patterned electrically conductive polymers providing electrical connection thereto and methods of fabrication thereof are described. Liquid crystal display cells are described having at least one of the electrodes providing a bias across the liquid crystal material formed from a patterned electrically conductive polymer. Thin film transistors having patterned electrically conductive polymers as source drain and gate electrodes are described. Light emitting diodes having anode and coated regions formed from patterned electrically conductive polymers are described. Methods of patterning using a resist mask; patterning using a patterned metal layer; patterning the metal layer using a resist; and patterning the electrically conductive polymer directly to form electrodes and anode and cathode regions are described.

LIGHT EMITTING DIODE WITH A CONDUCTIVE PHOSPHOR ELECTRODE AND A METHOD FOR ITS FABRICATION

In a method for forming a phosphor-converted LED, an array of vertical LEDs is printed over a conductive surface of a substrate such that a bottom electrode of the LEDs ohmically contacts the conductive surface. A dielectric layer then formed over the conductive surface. An electrically conductive phosphor layer is deposited over the dielectric layer and the LEDs to ohmically contact the top surface of the LEDs and connect the LEDs in parallel. The conductive phosphor layer is formed by phosphor particles intermixed with a transparent conductor material. One or more metal contacts over the conductive phosphor layer conduct current through the conductive phosphor layer and the LEDs to illuminate the LEDs. A portion of light generated by the LED leaks through the conductive phosphor layer, and the combination of the LED light and phosphor light creates a composite light.

TRANSPARENT LED WAFER MODULE AND METHOD FOR MANUFACTURING SAME

The present invention relates to a transparent LED wafer module and to a method for manufacturing same. In a conductor LED device epitaxial process, the conductor LED device is grown on a transparent material wafer, wherein both surfaces of the conductor LED device are entirely grown on the transparent material, and then a transparent glass substrate is restacked, thereby securing a high amount of light.

GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE

It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.

High resolution display device

A display device is provided. The display device includes a substrate, an emission layer configured to emit light, the emission layer including a first semiconductor layer provided on the substrate, an active layer provided on the first semiconductor layer, and a second semiconductor layer provided on the active layer, and a plurality of color converting layers provided on the emission layer and configured to emit light of certain colors from light emitted from the emission layer.

Light-emitting device with reflective layer

A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

LIGHT EMITTING DIODE HAVING AN ADHESIVE LAYER FORMED WITH HEAT PATHS

The present invention is related to a light emitting diode having an adhesive layer provided with heat paths. In the present invention, an adhesive layer is formed to bond the substrate and the LED stack. There are a plurality of metal protrusions or semiconductor protrusions passing through the adhesive layer to form heat-dissipation paths to improve the heat-dissipation effect of the LED so as to enhance the stability and the light-emitting efficiency of the LED.

Organic light-emitting display device and method of manufacturing the same

An organic light-emitting display device includes a capacitor lower electrode that includes a semiconductor material doped with ion impurities. A first insulating layer covers an active layer and the capacitor lower electrode. A gate electrode includes a gate lower electrode formed of a transparent conductive material and a gate upper electrode formed of metal. A pixel electrode is electrically connected to the thin film transistor. A capacitor upper electrode is at the same level as the pixel electrode. An etch block layer is formed between the first insulating layer and the capacitor upper electrode. Source and drain electrodes are electrically connected to the active layer. A second insulating layer has an opening completely exposing the capacitor upper electrode. A third insulating layer exposes the pixel electrode. An intermediate layer includes an emissive layer. An opposite electrode faces the pixel electrode.

TRANSPARENT CONDUCTIVE COATING AND PROCESS THEREFOR

HIGH-RESOLUTION DISPLAY DEVICE

A high-resolution display device is provided. The high-resolution display device includes a light-emitting layer including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of transparent electrodes respectively formed on the second semiconductor layer in sub-pixel regions, a first electrode connected to the first semiconductor layer, a plurality of second electrodes connected to the plurality of transparent electrodes, a color-converting layer arranged over the light-emitting layer and configured to emit light of a predetermined color based on light generated by the light-emitting layer, which are sequentially stacked on a substrate including a plurality of sub-pixel regions. One or more ion injection regions corresponding to current injection regions corresponding to the plurality of the sub-pixel regions is formed in the second semiconductor layer.

Light-emitting diode and method of manufacturing the same

A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface, and a peripheral region of the top surface of the mesa structure. The protective film includes an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. A continuous electrode film contacts the exposed compound semiconductor layer, covers the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent conductive film is formed between a reflecting layer and the layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window.

LED lamp for light source

Whereas incandescent light bulbs and other similar light sources known in the related art emit light in all directions, LED lamps can emit light in a single direction, and this is manifested in the problem of being unable to achieve light distribution characteristics satisfied by conventional headlamp designs. In accordance with an embodiment of the presently disclosed subject matter, an LED lamp for a light source of a headlamp can include an LED chip in the vicinity of the focus of a projection means and a shielding member covering a portion of the LED chip in a formation allowing a light distribution characteristic suitable for a vehicle front-illumination light to be obtained when light from the LED chip is magnified and projected in an illumination direction by a projection lens or the like constituting the projection means. Accordingly, accurate light distribution characteristics can be obtained in a simple manner by projecting in the illumination direction using the projection lens ...

METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE

The present invention provides a method for producing a semiconductor device exhibiting the improved emission efficiency by reducing a strain between a p-contact layer and a transparent electrode. A transparent electrode made of IZO (Zinc-doped Indium Oxide) was formed on a p-type contact layer by vapor deposition or sputtering. Subsequently, a p-type cladding layer and a p-type contact layer were p-type activated and a transparent electrode was crystallized by indirect resistance heating. This heat treatment was performed under a reduced pressure at a temperature of 700° C. Next, microwave heating was performed for three to thirty minutes at a temperature of 100° C. to 350° C. by microwave irradiation with a frequency of 5.8 GHz in a nitrogen atmosphere. This reduced a strain of the transparent electrode, and improved the conductivity or translucency of the transparent electrode.

Patterns of electrically conducting polymers and their application as electrodes or electrical contacts

Electronic devices having patterned electrically conductive polymers providing electrical connection thereto and methods of fabrication thereof are described. Liquid crystal display cells are described having at least one of the electrodes providing a bias across the liquid crystal material formed from a patterned electrically conductive polymer. Thin film transistors having patterned electrically conductive polymers as source drain and gate electrodes are described. Light emitting diodes having anode and coated regions formed from patterned electrically conductive polymers are described. Methods of patterning using a resist mask; patterning using a patterned metal layer; patterning the metal layer using a resist; and patterning the electrically conductive polymer directly to form electrodes and anode and cathode regions are described.

LIGHT EMITTING APPARATUS AND WINDOW

A light emitting apparatus and a window. The light emitting apparatus includes a liquid crystal device that includes a support substrate, a first electrode, a liquid crystal layer, and a sacrificial structure, separating the sacrificial structure from the liquid crystal layer to expose one surface of the liquid crystal layer, and a second electrode on the one surface of the liquid crystal layer.

LED chip with current spreading layer and method for producing same

An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.

Semiconductor light emission element

A semiconductor light emission element (1) includes: a substrate (110); multi-layered semiconductor layers (100) including a light emission layer (150) and layered on the substrate (110); a transparent electrode (170) including an indium oxide and layered on the multi-layered semiconductor layers (100); a first junction layer (190) including tantalum as a valve action metal and layered on the transparent electrode (170) in such a manner that a side of the first junction layer (190) being in contact with the transparent electrode (170) is a tantalum nitride layer or a tantalum oxide layer; and a first bonding pad electrode (200) layered on the first junction layer (190) and used for electrical connection with outside. This improves a bonding property of the transparent electrode or the semiconductor layer with the connection electrode and reliability of the electrodes.

Light emitting device with LED stack for display and display apparatus having the same

A light emitting device for a display includes a substrate and first, second, and third LED sub-units, a first transparent electrode between the first and second LED sub-units and in ohmic contact with the first LED sub-unit, a second transparent electrode between the second and third LED sub-units and in ohmic contact with the second LED sub-unit, a third transparent electrode between the second transparent electrode and the third LED sub-unit and in ohmic contact with the third LED sub-unit, at least one current spreader connected to at least one of the first, second, and third LED sub-units, electrode pads disposed on the substrate, and through-hole vias formed through the substrate, in which at least one of the through-hole vias is formed through the substrate and the first and second LED sub-units.

Light emitting structure

A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.

Optoelectronic component

An optoelectronic component may have a semiconductor chip designed to emit electromagnetic radiation. The semiconductor chip may have a radiation exit surface, and a protective layer arranged over the radiation exit surface. The protective layer may include at least one first layer comprising an aluminum oxide and at least one second layer comprising a silicon oxide a silicon oxide, and at least one third layer comprising a titanium oxide. A current spreading layer may include one or more transparent conductive oxides arranged between the radiation exit surface and the protective layer.

Method of manufacturing a semiconductor device

A semiconductor device array comprising highly densely arranged nano-size semiconductor devices is prepared by a simple method. The array comprises a porous body having cylinder-shaped pores formed by removing cylinder-shaped regions from a structure that includes a matrix member formed so as to contain silicon or germanium and the cylinder-shaped regions containing aluminum and dispersed in the matrix member, semiconductor regions formed in the pores, each having at least a p-n or p-i-n junction, and a pair or electrodes, arranged respectively on the top and at the bottom of the semiconductor regions. The semiconductor regions and the pair of electrodes form a plurality of semiconductor devices on a substrate.

METHOD FOR PRODUCING LIGHT-EMITTING DEVICE

An n-side flattening electrode and a p-side flattening electrode are formed apart from each other on a predetermined region on an insulating film. Recesses are formed according to the level difference due to holes on the surfaces of the n-side flattening electrode and the p-side flattening electrode. Subsequently, the surfaces of the n-side flattening electrode and the p-side flattening electrode are ground until the surfaces become flat. After removal of oxide film, an n-side junction electrode and a p-side junction electrode are formed on the n-side flattening electrode and the p-side flattening electrode, respectively. Since the surfaces of the n-side flattening electrode and the p-side flattening electrode are flattened, the surfaces of the n-side junction electrode and the p-side junction electrode become flat so that the thickness is uniform.

Optoelectronic device comprising three-dimensional diodes

An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

Quantum dot light enhancement substrate and lighting device including same

A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer comprising a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material comprising quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a ...

LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

A light-emitting diode including a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer, and a reflective pattern disposed on the second semiconductor layer and configured to reflect light emitted from the active layer, the reflective pattern having heterogeneous metal layers and configured to absorb stress caused by differences in coefficient of thermal expansion between the heterogeneous metal layers.

LIGHT EMITTING DIODE HAVING CARBON NANOTUBES

A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a second electrode and a carbon nanotube structure. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the substrate. The first semiconductor layer is a stepped structure and has a first surface and a second surface lower than the first surface. The first electrode is located on and electrically connected to the second semiconductor layer. The carbon nanotube structure is located on the second surface of the first semiconductor layer and electrically connected to the first semiconductor layer. The second electrode is located on and electrically connected to the carbon nanotube structure.

LIGHT EMITTING DEVICE HAVING COMMONLY CONNECTED LED SUB-UNITS

A display apparatus including a thin film transistor (TFT) substrate, a first LED sub-unit disposed on the TFT substrate, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, electrode pads disposed between the TFT substrate and the first LED sub-unit, and connectors connecting the first, second, and third LED sub-units to a respective one of the electrode pads, in which the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit are configured to be independently driven, light generated from the first LED sub-unit is configured to be emitted to the outside of the display apparatus by passing through the second LED sub-unit and the third LED sub-unit, and light generated from the second LED sub-unit is configured to be emitted to the outside of the display apparatus by passing through the third LED sub-unit.

MICRO LED DISPLAY PANEL, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE

A Micro LED display panel, a method for fabricating the Micro LED display panel and a display device are provided. When the LED chip array is transferred, it may only be required to embed the LED chip array into the adhesive film layer. The LED chip array is bonded to the array substrate through the adhesive film layer. Then, unnecessary portions of the adhesive film layer and unnecessary LED chips are removed. It is not necessary to attach LED chips in the LED chip array one by one to the substrate by soldering, in which case the process of fabricating the Micro LED display panel is simplified, the difficulty in fabricating the Micro LED display panel is reduced, the influence of the high temperature generated by the soldering process on the LED chips is avoided, and damage to the LED chips during the transfer process is avoided.

TRANSPARENT CONDUCTIVE STRUCTURE AND FORMATION THEREOF

Briefly, an embodiment comprises fabricating and/or uses of one or more zinc oxide crystals to form a transparent conductive structure.

Light emitting device and method of fabricating the same

Provided are a light emitting device and a method of fabricating the same. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer being formed of a semiconductor material. Also, the light emitting device further includes a current spreading layer comprising a plurality of carbon nanotube bundles physically connected to each other on one of the first and second conductive type semiconductor layers.

Light emitting element

A semiconductor light emitting element has a first electrode and a second electrode provided on a semiconductor layer; the first electrode has a first external connector and a first extended portion and second extended portion that extend from the first external connector, the second electrode has a second external connector, and a third extended portion, a fourth extended portion, and a fifth extended portion that extend from the second external connector, the third extended portion extends along the first extended portion and farther outside than the first extended portion, the fourth extended portion extends along the second extended portion and farther outside than the second extended portion, and the fifth extended portion extends an area between the third extended portion and the fourth extended portion to the first external connector side, and the fifth extended portion is either on a line that links a point on the first extended portion at the position closest to the second external connector and a point on the second extended portion at the position closest to the second external connector, or closer to the second external connector side than the line.

Semiconductor light emitting device

According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.

Light-emitting diode

An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

Semiconductor light emitting device and method for manufacturing same

A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

Semiconductor light emitting device and manufacturing method thereof

A semiconductor light emitting device which includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The semiconductor light emitting device comprises a first transparent electrode made of metal oxide transparent conductor provided on a surface of the p-type semiconductor layer; a second transparent electrode made of a metal oxide transparent conductor provided on the surface of the p-type semiconductor layer and electrically connected to the first transparent electrode; and a p-side electrode pad made of metal provided on a surface of the second transparent electrode. The second transparent electrode is higher in contact resistance with the p-type semiconductor layer than the first transparent electrode.

Light-emitting diode

A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

Lighting device

An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is formed to connect to the first electrode through an opening formed in the second electrode and the layer including a light emitting material. An effect of voltage drop due to relatively high resistivity of the first electrode can be reduced by electrically connecting the third electrode to the first electrode through the opening.

Light-emitting device and method for producing light emitting device

A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.

Light emitting diodes and method for manufacturing the same

An exemplary LED includes an electrode layer, an LED die, a transparent electrically conductive layer, and an electrically insulating layer. The electrode layer includes a first section and a second section electrically insulated from the first section. The LED die is arranged on and electrically connected to the second section of the electrode layer. The transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. The electrically insulating layer is located between the LED die and the transparent electrically conductive layer to insulate the transparent electrically conductive layer from the second section of the electrode layer.

Light Emitting Diode with a Current Concentrating Structure

A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED toward a peripheral region of the LED.

Light emitting diode chip and method of manufacturing the same

An LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first electrode and a second electrode formed on the substrate in sequence. A surface of the first type semiconductor layer away from the substrate comprises an exposed first area and a second area covered by the light-emitting layer. The first electrode is formed on the exposed first area of the substrate. A number of recesses are defined in the second area of the surface of the first type semiconductor layer. The recesses are spaced apart from each other and arranged in sequence in a direction away from the first electrode; depths of the recesses gradually decrease following an increase of a distance between the recesses and the first electrode. The second electrode is formed on the second type semiconductor layer.

Semiconductor light emitting device and manufacturing method of the same

There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bonding electrodes connected to the first and second conductive semiconductor layers, respectively; a transparent electrode layer formed on the second conductive semiconductor layer; a plurality of nano structures formed on the transparent electrode layer; and a passivation layer formed to cover the plurality of nano-structures, wherein refractive indexes of the transparent electrode layer, the plurality of nano-structures, and the passivation layer may be sequentially reduced.

Light emitting device and lighting system with the same

Embodiments provide a light emitting device including a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a metal filter of an irregular pattern on the light emitting structure, and openings between the irregular patterns in the metal filter.

Distributed current blocking structures for light emitting diodes

An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.

LED Device with Embedded Top Electrode

An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer. 120-. (canceled)21. A light emitting diode (LED) device comprising:an active light-emitting layer;a top contact layer having a top surface formed over the active light-emitting layer; anda first top electrode at least partially embedded in the top contact and having a non-conductive bottommost surface, wherein the first top electrode electrically contacts the top contact layer.22. The LED device of claim 21 , wherein the first top electrode comprises a metal claim 21 , a metal alloy claim 21 , a conductive material claim 21 , or combinations thereof.23. The LED device of claim 22 , wherein the conductive material is transparent.24. The LED device of claim 21 , wherein the top contact layer includes a transparent conductive material and the first top electrode includes a metal material.25. The LED device of claim 21 , further comprising:a bottom electrode;a buffer layer formed over the bottom electrode; anda bottom contact layer formed over the buffer layer, wherein the active light-emitting layer is formed over the bottom electrode, the buffer layer, and the bottom contact layer.26. The LED device of claim 25 , wherein the buffer layer is reflective.27. The LED device of claim 21 , further comprising a conductive web connecting the first top electrode and a second top electrode in the top contact layer.28. The LED device of claim 27 , wherein the conductive web comprises a metal claim 27 , a metal alloy claim 27 , a conductive material claim 27 , or combinations thereof.29. A method of forming a light emitting diode (LED) ...

TRANSPARENT LIGHT EMITTING DEVICE WITH CONTROLLED EMISSION

The present invention relates to a light emitting device comprising: a transparent substrate (); partially transparent an anode layer () or layer assembly arranged on said substrate (); a light emitting layer () arranged on said anode layer (); and a transparent cathode layer () arranged on said light emitting layer; () wherein said anode layer () or layer assembly comprises a first surface () facing said substrate () and a second surface () facing said light emitting layer () and is positioned opposite to said first surface (); said first surface () comprises a transparent conductive material; said second surface () comprises first () and second domains (); said first domains () are conductive and non-transparent; said second domains () are transparent and electrically isolating; and said first domains () are in direct contact with said light emitting layer () and are arranged to allow electrical contact between said first surface () and said light emitting layer (). The light emitting device can be applied in transparent OLED devices to allow for the possibility of controlled emission. 1. A light emitting device comprising:a transparent substrate;a partially transparent an anode layer or anode layer assembly arranged on said substrate;a light emitting layer arranged on said anode layer; anda transparent cathode layer arranged on said light emitting layer; whereinsaid anode layer or layer assembly comprises a first surface facing said substrate and a second surface facing said light emitting layer and is positioned opposite to said first surface;said first surface comprises a transparent conductive material;said second surface comprises a metal layer having first and second domains which metal layer comprises at least one metal or alloy which is in non-oxidized form in said first domains and oxidized in said second domains;said first domains are conductive and non-transparent;said second domains are transparent and electrically isolating; andsaid first domains are ...

Light Emitting Diodes with Smooth Surface for Reflective Electrode

A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.

Semiconductor light emitting device and fabrication method thereof

A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A reflective structure is formed on the light emitting structure and includes a nano-rod layer comprised of a plurality of nano-rods and air filling space between the plurality of nano-rods and a reflective metal layer formed on the nano-rod layer.

Semiconductor light-emitting element, lamp, electronic device and machine

A semiconductor light-emitting element ( 1 ) is provided which includes a semiconductor layer ( 10 ), an n-type electrode ( 18 ) which is provided on an exposed surface ( 12 a ) of an n-type semiconductor layer, wherein an exposed surface is exposed by removing a part of the semiconductor layer ( 10 ), a transparent conductive film which is provided on the semiconductor layer ( 10 ) and a p-type electrode ( 17 ) which is provided on the transparent conductive film; a light-reflecting layer ( 39 ) is provided between the semiconductor layer ( 10 ) and the transparent conductive film, wherein at least part of the light-reflecting layer overlaps with the p-type electrode ( 17 ) in the planar view; the p-type electrode ( 17 ) comprises a pad portion (P) and a linear portion (L) which linearly extends from the pad portion (P) and has an annular structure in the planar view; the n-type electrode ( 18 ) exists in an inner area which is surrounded by the linear portion (L) and exists on a straight line (L 1 ) which goes through a center ( 17 a ) of the pad portion (P) and a center ( 10 a ) of the semiconductor layer ( 10 ); and the distance (D 3 ) between the center ( 18 a ) of the n-type electrode ( 18 ) and the center ( 17 a ) of the pad portion (P) is greater than or equal to the distance (D 4 ) between the center ( 17 a ) of the pad portion (P) and the center ( 10 a ) of the semiconductor layer ( 10 ).

LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND METHOD FOR PRODUCING LIGHT-EMITTING ELEMENT

A light-emitter including: a transparent first electrode; a charge injection transport layer; a light-emitting layer; and a transparent second electrode, layered in this order. The light-emitting layer is defined by a bank. The charge injection transport layer has a recessed structure including: an inner bottom surface in contact with a bottom surface of the light-emitting layer; and an inner side surface continuous with the inner bottom surface. The inner side surface includes: a lower edge continuous with the inner bottom surface; and an upper edge continuous with the lower edge. The upper edge is aligned with a bottom periphery of the bank, or has contact with a bottom surface of the bank. The charge injection transport layer has contact with a side surface of the light-emitting layer. 1. A double-sided light-emitter that emits light from both sides thereof , comprising:a first electrode;a charge injection transport layer;a functional layer including a light-emitting layer; anda second electrode, the first electrode, the charge injection transport layer, the functional layer and the second electrode being layered in this order, at least the light-emitting layer being defined by a bank, whereinthe first electrode and the second electrode are transparent electrodes,at least a surface of the bank is liquid-repellent, and the charge injection transport layer is composed of a metal compound that is more liquid-philic than the surface of the bank,the charge injection transport layer has a recessed structure so that in a region defined by the bank, the charge injection transport layer is lower than a bottom surface of the bank, (i) an inner bottom portion having an inner bottom surface that is in contact with a bottom surface of the functional layer; and', '(ii) an inner side portion having an inner side surface that is continuous with the inner bottom surface, and, 'the recessed structure of the charge injection transport layer includesthe inner bottom portion has a ...

Light emitting element and light emitting device using the same

An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.

Light-emitting element, light-emitting device, and electronic device

The present invention provides a light-emitting element, a light-emitting device and an electronic device in which an optical path length through which generated light goes can be changed easily. The present invention provides a light-emitting element including a light-emitting layer between a first electrode and a second electrode, and a mixed layer in contact with the first electrode; in which the light-emitting layer includes a light-emitting substance; the mixed layer includes a hole transporting substance and a metal oxide showing an electron accepting property to the hole transporting substance, and has a thickness of 120 to 180 nm, and when a voltage is applied between the first electrode and the second electrode such that a potential of the first electrode is higher than that of the second electrode, the light-emitting substance emits light.

LIGHT EMITTING DEVICE, LIGHT EMITTING APPARATUS PROVIDED WITH A LIGHT EMITTING DEVICE, AND METHOD OF MANUFACTURING A LIGHT EMITTING DEVICE

The present disclosure aims to provide a light-emitter having a favorable luminescence property, a light-emitting device having the light-emitter, and a method of manufacturing the light-emitter. Specifically, the light-emitter has the following structure. A hole injection layer and a light-emitting layer are layered between a first electrode and a second electrode which are transparent, and a light-emitting layer exists in an area defined by a bank . Thus, organic EL elements and are formed. The hole injection layer has a recess in an upper surface of the area defined by the bank . An upper peripheral edge of the recess in the hole-injection layer is covered with a portion of the bank 1. A double-sided light-emitter that emits light from both sides thereof , comprising:a first electrode;a laminate disposed on the first electrode that includes a charge injection transport layer and a functional layer including a light-emitting layer;a second electrode disposed on the laminate; anda bank that is insulative and defines an area in which the light-emitting layer is to be formed, whereinthe first electrode and the second electrode are transparent electrodes,the charge injection transport layer has a recess in an upper surface of the area defined by the bank,an upper peripheral edge of the recess is covered with a portion of the bank,a part of the light-emitting layer is interposed between the second electrode and the upper peripheral edge of the recess,the part of the light-emitting layer is interposed between the second electrode and the portion of the bank, and undergoes charge injection from the second electrode, andthe portion of the bank is interposed between the upper peripheral edge of the recess and the part of the light-emitting layer.2. The light-emitter of claim 1 , whereinthe charge injection transport layer is a hole injection layer made from one of a metal oxide, a metal nitride, and a metal oxynitride.3. The light-emitter of claim 2 , whereinthe functional ...

Light-Emitting Element and Display Device

When a light-emitting element having an intermediate conductive layer between a plurality of light-emitting layers is formed, the intermediate conductive layer can have transparency; and thus, materials are largely limited and the manufacturing process of an element becomes complicated by a conventional method. A light-emitting element according to the present invention is formed by sequentially stacking a pixel electrode, a first light-emitting layer, an intermediate conductive layer (including an electron injecting layer and a hole-injecting layer, one of which is island-like), a second light-emitting layer and an opposite electrode. Therefore, the present invention can provide a light-emitting element typified by an organic EL element in which a range of choice of materials that can be used as the intermediate conductive layer is broadened extremely, and which can realize a high light-emitting efficiency, a low power consumption and a high reliability, and further a display device using the light-emitting element.

Semiconductor light emitting device

A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer.

LIGHT EMITTING DIODE PACKAGE AND A METHOD FOR MANUFACTURING LIGHT EMITTING DIODE PACKAGE

A light emitting diode (LED) package comprises a LED, and a lead frame electrically connected to the LED. The lead frame includes a notch which has a predetermined size and a predetermined shape configured to separate a solder paste into two regions on either side of the notch when the solder paste is disposed on the lead frame. 1. A light emitting diode (LED) package comprising:a LED; anda lead frame electrically connected to the LED, the lead frame including a notch.2. The LED of claim 1 , wherein the notch is configured to separate a solder paste into two regions on either side of the notch when the solder paste is disposed on the lead frame.3. The LED package of claim 2 , wherein the lead frame includes a first lead area and a second lead area physically separated from each other.4. The LED package of claim 3 , wherein the first lead area includes the notch.5. The LED package of claim 4 , wherein the second lead area includes another notch.6. The LED of claim 2 , wherein the notch includes a rectangular shape.7. The LED of claim 2 , wherein the notch includes a triangular shape.8. The LED of claim 2 , wherein the notch includes a U shape.9. An electronic system comprising:a printed circuit board (PCB);a light emitting diode (LED) package mounted on the PCB, wherein the LED package includes a lead frame including a notch; anda solder paste disposed between the lead frame and the PCB, the solder paste including a first solder area and a second solder area separated from each other and disposed on either side of the notch.10. The electronic system of claim 9 , wherein the notch is configured to separate the solder paste into the first and the second solder areas when the solder paste is disposed on the lead frame.11. A manufacturing method for mounting a light emitting diode (LED) package on a printed circuit board (PCB) claim 9 , the manufacturing method comprising:forming a LED package including a lead frame, wherein the lead frame includes a notch;forming a ...

LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SAME, AND LIGHT EMITTING DEVICE

Organic light-emitting elements each have the following structure: a transparent anode, a functional layer including a charge injection layer and an organic light-emitting layer, and a transparent cathode are layered on a substrate in the stated order; a bank defines a formation area of the organic light-emitting layer; the charge injection layer is a metal oxide layer formed by oxidizing an upper surface portion of the anode composed of the metal layer, and a portion of the charge injection layer that is positioned under the area is depressed so as to form a recess; and the upper peripheral edge of the recess is covered with a covering portion of the bank. 1. A double-sided light-emitter that emits light from both sides thereof , comprising:a first electrode;a layered body disposed on the first electrode, the layered body including a charge injection layer and a functional layer, the functional layer including a light-emitting layer;a second electrode disposed on the layered body; anda bank that defines a position of the light-emitting layer, whereinthe first electrode and the second electrode are transparent electrodes,the charge injection layer is formed by oxidation of an upper portion of a metal,the first electrode includes a metal layer that is a lower portion of the metal,an inner portion of the charge injection layer is depressed to define a recess,an upper peripheral edge of the recess is covered with a portion of the bank,a portion of the light-emitting layer is interposed between the second electrode and the upper peripheral edge of the recess,the portion of the light-emitting layer is interposed between the second electrode and the portion of the bank, and undergoes charge injection from the second electrode, andthe portion of the bank is interposed between the upper peripheral edge of the recess and the part of the light-emitting layer.2. The light emitter of claim 1 , whereinthe charge injection layer is a hole injection layer made from one of a metal ...

LIGHT-EMITTING PANEL, MANUFACTURING METHOD OF LIGHT-EMITTING PANEL, AND FILM FORMING SYSTEM

A light-emitting panel includes: a substrate; and a light-emitting functional multilayer formed on the substrate, wherein the light-emitting functional multilayer including a first functional layer and a second functional layer, a thickness of part of the first functional layer positioned in a first light-emitting region is smaller than a thickness of part of the first functional layer positioned in a second light-emitting region, a thickness of part of the second functional layer positioned in the first light-emitting region is greater than a thickness of part of the second functional layer positioned in the second light-emitting region, and when the light-emitting functional multilayer is viewed in a layering direction thereof, the first light-emitting region and the second light-emitting region are adjacent or distant from each other in a direction perpendicular to the layering direction, and each include a plurality of pixels that are each composed of a plurality of adjacent sub-pixels. 1. A light-emitting panel comprising:a substrate; anda light-emitting functional multilayer formed on the substrate, whereinthe light-emitting functional multilayer including a first functional layer and a second functional layer,a thickness of part of the first functional layer positioned in a first light-emitting region is smaller than a thickness of part of the first functional layer positioned in a second light-emitting region,a thickness of part of the second functional layer positioned in the first light-emitting region is greater than a thickness of part of the second functional layer positioned in the second light-emitting region, andwhen the light-emitting functional multilayer is viewed in a layering direction thereof, the first light-emitting region and the second light-emitting region are adjacent or distant from each other in a direction perpendicular to the layering direction, and each include a plurality of pixels that are each composed of a plurality of adjacent ...

Light emitting diode with multiple transparent conductive layers and method for manufacturing the same

An LED includes a first semiconductor layer, a second semiconductor layer, an active layer, a first transparent conductive layer, and a second transparent conductive layer. The first transparent conductive layer is formed on the second semiconductor layer. The second transparent conductive layer is formed on the first transparent conductive layer. The thickness of the first transparent conductive layer is less than that of the second transparent conductive layer. The density of the first transparent conductive layer is larger than that of the second transparent conductive layer. The disclosure further includes a method for manufacturing the LED.

SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FORMING THE SAME

A semiconductor light-emitting device has a first principal surface, a second principal surface formed on a side opposite to the first principal surface, and a light-emitting layer. A p-electrode on the second principal surface is in the region of the light-emitting layer and surrounds an n-electrode. An insulating layer on the side of the semiconductor layer surrounds the p- and the n-electrodes. A p-metal pillar creates an electrical connection for the p-electrode, and an n-metal pillar creates an electrical connection for the n-electrode. A resin layer surrounds the end. portions of the p- and the n-metal pillars, and also covers the side surface of the semiconductor layer, the second principal surface, the p-electrode, the n-electrode, the insulating layer, the p-metal pillar and the n-metal pillar. 1. A semiconductor light-emitting device comprising:a semiconductor layer comprising a first principal surface, a second principal surface formed on a side opposite to the first principal surface, and a light-emitting layer;a p-electrode arranged on the second principal surface;an n-electrode arranged on the second principal surface and surrounded by the p-electrode; andan insulating layer arranged on side surfaces of the semiconductor layer and on the second principal surface of the semiconductor layer to surround the p-electrode and the n-electrode.2. The semiconductor light-emitting device according to claim 1 , whereinthe n-electrode includes a first portion electrically connected to an n-metal pillar and a second portion arranged continuously with the first portion to disperse current flowing through the n-electrode.3. The semiconductor light-emitting device according to claim 2 , whereina plurality of the n-electrodes are arranged on the second principal surface; and a distance from a central axis of an outermost n-electrode and a longitudinal edge of the p-electrode is one-half of a distance between central axes of adjacent n-electrodes.4. The semiconductor ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE

A semiconductor light-emitting device includes a lamination of semiconductor layers including a first layer of a first conductivity type, an active layer, and a second layer of a second conductivity type; a transparent conductive film formed on a principal surface of the lamination and having an opening; a pad electrode formed on part the opening; and a wiring electrode connected with the pad electrode, formed on another part of the opening while partially overlapping the transparent conductive film; wherein contact resistance between the transparent conductive film and the lamination is larger than contact resistance between the wiring electrode and the lamination. Field concentration at the wiring electrode upon application of high voltage is mitigated by the overlapping transparent conductive film. 1. A semiconductor light-emitting device comprising:a lamination of semiconductor layers including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer;a transparent conductive film formed on one of the principal surfaces of the lamination of semiconductor layers and having an opening;a pad electrode formed on part of the one principal surface exposed in the opening of the transparent conductive film; anda wiring electrode formed on another part of the one principal surface exposed in the opening of the transparent conductive film, connected with the pad electrode, and overlapping with part of the transparent conductive film; whereincontact resistance between the transparent conductive film and the lamination of semiconductor layers is larger than contact resistance between the wiring electrode and the lamination of semiconductor layers.2. A semiconductor light-emitting device according to claim 1 , wherein the contact resistance between the transparent conductive film and the lamination of semiconductor layers is in a ...

LIGHT EMITTING DEVICE, AND PACKAGE ARRAY FOR LIGHT EMITTING DEVICE

A light emitting device includes a substantially cuboid package and a light emitting element. The package is made up of a molded article, and first and second leads each embedded in the molded article. The first lead has a first terminal component exposed at the boundary between a first side face, a bottom face, and a rear face contiguous with the bottom face and opposite a light emission face. The second lead has a second terminal component exposed at the boundary between a second side face opposite the first side face, the bottom face, and the rear face. The first terminal component has a first terminal concavity whose opening is contiguous with the first side face, the bottom face, and the rear face. The second terminal component has a second terminal concavity whose opening is contiguous with the second side face, the bottom face, and the rear face. 1. A light emitting device , comprising:a package constituted by a molded article and first and second leads, the first and second leads being each embedded in the molded article, the package formed in a substantially cuboid shape; anda light emitting element installed in the package,the first lead has a first terminal component, the first terminal component exposed from the molded article at a boundary between a first side face, a bottom face, and a rear face of the package, the rear face being opposite to a light emission face contiguous with the bottom face,the second lead has a second terminal component, the second terminal component exposed from the molded article at a boundary between a second side face, the bottom face, and the rear face, the second side face being opposite to the first side face,the first terminal component having a first terminal concavity, the first terminal concavity continuously opening on the first side face, the bottom face, and the rear face, andthe second terminal component having a second terminal concavity, the second terminal concavity continuously opening on the second side face, ...

Group iii nitride semiconductor light-emitting device

The invention provides a Group III nitride semiconductor light-emitting device which has a light extraction face at the n-layer side and which provides high light emission efficiency. The light-emitting device is produced through the laser lift-off technique. The surface of the n-GaN layer of the light-emitting device is roughened. On the n-GaN layer, a transparent film is formed. The transparent film satisfies the following relationship: 0.28≦n×d 1 ×2/λ≦0.42 or 0.63≦n×d 1 ×2/λ≦0.77, wherein n represents the refractive index of the transparent film, d 1 represents the thickness of the transparent film in the direction orthogonal to an inclined face thereof, and λ represents the wavelength of the light emitted from the MQW layer.

Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods

Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.

LIGHT-EMITTING DIODE CHIP

A light-emitting diode (LED) chip comprising a first semiconductor layer; an active layer disposed on said first semiconductor layer; a second semiconductor layer disposed on said active layer; metal layers which disposed on said second semiconductor layer and overlapped with each other indirectly, comprising a first metal layer which connected to a first electrode deposited on said first semiconductor, and a second metal layer which connected to a transparent conductive layer and a second electrode deposited on said second semiconductor layer; wherein said second metal layer deposited on said first metal layer which further connected to said first semiconductor layer through an indentation. 1. A light-emitting diode (LED) chip comprising:a first semiconductor layer;an active layer disposed on said first semiconductor layer;a second semiconductor layer disposed on said active layer;a plurality of metal layers which disposed on said second semiconductor layer and overlapped with each other indirectly, comprising a first metal layer which connected to a first electrode deposited on said first semiconductor, and a second metal layer which connected to a transparent conductive layer and a second electrode deposited on said second semiconductor layer;wherein said second metal layer deposited on said first metal layer which further connected to said first semiconductor layer through an indentation.2. The LED chip as claimed in claim 1 , wherein said indentation deposited on and penetrated said second semiconductor layer and said active layer claim 1 , and reached said first semiconductor layer; and said first metal layer deposited therein and connected to said first semiconductor layer.3. The LED chip as claimed in further comprising a plurality of insulating layers deposited between said first and second metal layer claim 1 , and between said first metal layer and said second semiconductor layer.4. The LED chip as claimed in claim 1 , wherein said metal layers branched ...

Light-emitting element and method for manufacturing same

The present invention provides a light-emitting element comprising: a carbon layer comprising a graphene; a plurality of fine structures having grown toward the upper side of the carbon layer; a thin film layer for coating the fine structures; and a light-emitting structure layer formed on the thin film layer.

MOLDED PACKAGE AND LIGHT EMITTING DEVICE

A molded package includes a molded resin and a lead. The molded resin has a recess portion provided on an upper surface of the molded resin to accommodate a light emitting component. The lead is partially exposed from a bottom surface of the recess portion of the molded resin to be electrically connected to the light emitting component and extends below a side wall of the recess portion. The lead has a groove formed on a surface of the lead at least partially along the side wall. The groove has an inside upper edge and an outside upper edge and is filled with the molded resin so that the inside upper edge is exposed from the bottom surface of the recess portion and the outside upper edge is embedded within the molded resin. 1. A molded package comprising:a molded resin having a recess portion provided on an upper surface of the molded resin to accommodate a light emitting component; anda lead partially exposed from a bottom surface of the recess portion of the molded resin to be electrically connected to the light emitting component and extending below a side wall of the recess portion, the lead having a groove formed on a surface of the lead at least partially along the side wall, the groove having an inside upper edge and an outside upper edge and being filled with the molded resin so that the inside upper edge is exposed from the bottom surface of the recess portion and the outside upper edge is embedded within the molded resin.2. The molded package according to claim 1 , wherein the groove is enclosed by connecting the inside upper edge and the outside upper edge to each other.3. The molded package according to claim 1 , wherein a cross section of the groove has a width larger than a width between the inside upper edge and the outside upper edge.4. The molded package according to claim 1 , wherein the lead has a rear-surface exposed portion exposed from a rear surface of the molded resin claim 1 , and a concave extending from an edge of the rear-surface exposed ...

Display Device and Manufacturing Method Thereof

A display device in which a plurality of gate wires and a plurality of drain wires that intersect the gate wires are provided, and thin film transistors connected to the gate wires and the drain wires are formed for respective pixel regions. At least one of the gate wires, the drain wires, and lead wires drawn from the gate wires or the drain wires is formed of a light-transmitting patterned conductive film. The light-transmitting patterned conductive film is formed of at least a first light-transmitting patterned conductive film, and a second light-transmitting patterned conductive film laminated on the first light-transmitting patterned conductive film. The second light-transmitting patterned conductive film is formed of a conductive film for coating only the surface of the first light-transmitting patterned conductive film including its side wall surface. 1. A display device in which a plurality of gate wires and a plurality of drain wires which intersect the gate wires are formed on a substrate , pixel regions are defined by the gate wires and the drain wires , and a thin film transistor connected to the gate wire and the drain wire is formed for each of the pixel regions ,wherein at least one of the gate wires, the drain wires, and a leading wire extending from the gate wire or the drain wire is formed of a light-transmitting patterned conductive film;the light-transmitting patterned conductive film is formed of at least a first light-transmitting patterned conductive film, and a second light-transmitting patterned conductive film laminated on the first light-transmitting patterned conductive film; andthe second light-transmitting patterned conductive film coats a surface of the first light-transmitting patterned conductive film including its side wall surface.2. The display device according to claim 1 , wherein each of the first light-transmitting patterned conductive film and the second light-transmitting patterned conductive layer is formed of a crystallized ...

LED LAMP ASSEMBLY

Provided is a light emitting diode (LED) lamp assembly having an increased light incidence angle by fixing unit LED lamps fixed on a substrate at various angles. The LED lamp assembly includes a substrate having a socket portion and an LED mounting portion, first unit LED modules installed on both surfaces of the substrate and irradiating light onto the both surfaces of the substrate in a frontward direction, and second unit LED modules irradiating light onto the both surface of the substrate in directions other than the frontward direction. In the LED lamp assembly, since first and second unit LED modules having light irradiation units formed at different positions are installed on both surfaces of a single substrate, light can be irradiated in a radial direction. 1. A light emitting diode (LED) lamp assembly comprising:a substrate having a socket portion and an LED mounting portion;first unit LED modules installed on both surfaces of the substrate and irradiating light onto the both surfaces of the substrate in a frontward direction; andsecond unit LED modules irradiating light onto the both surface of the substrate in directions other than the frontward direction.2. The LED lamp assembly of claim 1 , wherein the second unit LED modules include light irradiation portions formed on side surfaces of an LED module main body having a mounting portion mounted on the substrate.3. The LED lamp assembly of claim 1 , wherein a second light irradiation portion formed on a second main body of the second unit LED module and a first light irradiation portion formed on a first main body of the first unit LED module are formed at different positions.4. The LED lamp assembly of claim 1 , wherein electrode terminals each having an elastically deformed part that is outwardly deformed are formed on both side surfaces coupled to the socket portion.5. The LED lamp assembly of claim 4 , wherein a volume forming member having a locking protrusion for preventing deviation when coupled to ...

LIGHT EMITTING ELEMENT

A light emitting element is provided in this application, including a carrier; a conductive connecting structure disposed on the carrier and including a transparent conductive connecting layer; and an epitaxial stack structure disposed on the conductive connecting structure and including a plurality of electrically connected epitaxial light-emitting stacks, which substantially have the same width. 1. A light emitting element comprising:a carrier;a conductive connecting structure disposed on the carrier; andan epitaxial stack structure disposed on the conductive connecting structure and comprising a plurality of electrically connected epitaxial light-emitting stacks, which substantially have the same width.2. The light emitting element according to claim 1 , wherein the conductive connecting structure comprises a transparent conductive connecting layer.3. The light emitting element according to claim 1 , wherein the conductive connecting structure comprises a conductive connecting layer formed on the carrier claim 1 , a reflective layer formed on the conductive connecting layer claim 1 , and a transparent conductive layer formed between the reflective layer and the epitaxial stack structure.4. The light emitting element according to claim 1 , wherein the electrically connected epitaxial light-emitting stacks are electrically connected via at least a metal layer.5. The light emitting element according to claim 4 , wherein the electrically connected epitaxial light-emitting stacks are formed in a serial connection.6. The light emitting element according to claim 1 , further comprising a transparent conductive layer connecting one of the electrically connected epitaxial light-emitting stacks to another.7. The light emitting element according to claim 6 , wherein the electrically connected epitaxial light-emitting stacks are formed in a serial connection.8. The light emitting element according to claim 6 , wherein transparent conductive layer includes at least one ...

Semiconductor light-emitting device having a photonic crystal pattern formed thereon, and method for manufacturing same

The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties. 1. A semiconductor device comprising:a substrate; a first conductive layer on the substrate;', 'an insulating layer on the first conductive layer;', 'a second conductive layer on the insulating layer; and', 'a third conductive layer on and in contact with the second conductive layer; and, 'a terminal portion comprisingan FPC overlapping the third conductive layer and connected to the third conductive layer,wherein the second conductive layer and the third conductive layer each have a light transmitting property, andwherein the first conductive layer is in electrical contact with the second conductive layer and the third conductive layer.2. A display panel comprising:a substrate; a capacitor comprising a first electrode layer and a second electrode layer;', a transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer;', 'a protective insulating layer on the transistor; and', 'a pixel electrode layer on the protective insulating layer, and electrically connected to one of the source electrode layer and the drain electrode layer; and, 'a pixel, the pixel ...

LIGHT EMITTING ELEMENT AND PRODUCTION METHOD FOR SAME, PRODUCTION METHOD FOR LIGHT-EMITTING DEVICE, ILLUMINATION DEVICE, BACKLIGHT, DISPLAY DEVICE, AND DIODE

A light-emitting element includes a first conductivity type semiconductor base, a plurality of first conductivity type protrusion-shaped semiconductors formed on the semiconductor base, and a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors. 1. A light-emitting element comprising:a first conductivity type semiconductor base;a plurality of first conductivity type protrusion-shaped semiconductors formed on the first conductivity type semiconductor base; anda second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors.2. The light-emitting element as claimed in claim 1 , wherein the first conductivity type protrusion-shaped semiconductors comprise first conductivity type rod-shaped semiconductors.3. The light-emitting element as claimed in claim 2 , whereinthe first conductivity type rod-shaped semiconductors have a length ten times larger than a thickness thereof.4. The light-emitting element as claimed in claim 1 , whereinthe first conductivity type protrusion-shaped semiconductors comprise first conductivity type plate-shaped semiconductors.5. (canceled)6. The light-emitting element as claimed in claim 1 , whereina transparent electrode layer is formed on the second conductivity type semiconductor layer.7. The light-emitting element as claimed in claim 6 , whereina facing gap between first conductivity type protrusion-shaped semiconductors, across which parts of the transparent electrode layer face each other, is filled with a transparent member made from a material higher in transparency than the transparent electrode layer.8. A light-emitting element production method comprising:a step of patterning a mask layer on a surface of a first conductivity type semiconductor layer forming part or entirety of a first substrate;a semiconductor core formation step of forming a plurality of first conductivity type protrusion-shaped semiconductors by anisotropically etching the semiconductor layer ...

LIGHT EMITTING DIODE AND A MANUFACTURING METHOD THEREOF, A LIGHT EMITTING DEVICE

The present invention provides an LED and the manufacturing method thereof, and a light emitting device. The LED includes a first electrode, for connecting the LED to a negative electrode of a power supply; a substrate, located on the first electrode; and an LED die, located on the substrate; in which a plurality of contact holes are formed extending through the substrate, the diameter of upper parts of the contact holes is less than the diameter of lower parts of the contact holes, and the contact holes are filled with electrode plugs connecting the first electrode to the LED die. The light emitting device includes the LED, and further includes a susceptor and an LED mounted on the susceptor. The manufacturing method includes: forming successively an LED die and a second electrode on a substrate; patterning a backsurface of the substrate to form inverted trapezoidal contact holes which expose the LED die; and filling the contact holes with conductive material till the backface of the substrate is covered by the conductive material. The LED has a high luminous efficiency and the manufacturing method is easy to implement. 1. An LED comprising:a first electrode for connecting the LED to a negative electrode of a power supply;a substrate located on the first electrode; andan LED die located on the substrate;wherein a plurality of contact holes are formed through the substrate, a diameter of upper parts of the contact holes is less than a diameter of lower parts of the contact holes, and the contact holes are filled with electrode plugs for connecting the first electrode to the LED die.2. The LED of claim 1 , wherein a diameter of lower parts of the contact holes ranges form 5 μm to 20 μm.3. The LED of claim 1 , further comprising a second electrode located on the LED die claim 1 , and the second electrode connects the LED to a positive electrode of the power supply.4. A light emitting device comprising an LED of claim 1 , further comprising a susceptor claim 1 , on ...

OPTOELECTRONIC DEVICE

A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer. 1. An optoelectronic element , comprising:a semiconductor stack layer comprising a first surface and a second surface;a first transparent conductive oxide layer formed on the first surface of the semiconductor stack layer, wherein the first transparent conductive oxide layer comprises at least an opening exposing the first surface of the semiconductor stack layer; anda second transparent conductive oxide layer filled into the opening and covering the first transparent conductive oxide layer.2. The optoelectronic element of claim 1 , wherein the semiconductor stack layer comprises a first conductive type semiconductor layer claim 1 , an active layer formed on the first conductive type semiconductor layer claim 1 , and a second conductive type semiconductor layer formed on the active layer.3. The optoelectronic element of claim 1 , wherein the semiconductor stack layer comprises an element selected from a group consisting of Al claim 1 , Ga claim 1 , In claim 1 , N claim 1 , P and As.4. The optoelectronic element of claim 1 , wherein the first transparent conductive oxide layer and the second transparent conductive oxide layer have the same constituent material with different refractive indexes.5. The optoelectronic element of claim 1 , wherein the first transparent conductive oxide layer and the second transparent conductive oxide layer have the same constituent material with different grain sizes.6. The optoelectronic element of claim 1 , ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure. 1. A semiconductor light-emitting device , comprising:a conductive support member;a metal layer on the conductive support member;an electrode layer on the metal layer;a plurality of compound semiconductor layers on the electrode layer and at least comprising a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer;a channel layer having a bottom surface that directly contacts the metal layer;an insulating layer surrounding the plurality of compound semiconductor layers;an electrode on the second conductivity type semiconductor layer, wherein the metal layer comprises a top surface and a bottom surface opposite to each other, the top surface comprising a first top surface and a second top surface around the first top surface and the bottom surface being substantially flat, wherein at least a portion of the first top surface directly contacts the electrode, and wherein a first height between the first top surface and the bottom surface is different from a second height of the second top surface from the bottom surface.2. The semiconductor light-emitting device according to claim 1 , wherein the first top surface is at a center area and the second top surface is at a peripheral area claim 1 , the first ...

Light emitting diode chip having electrode pad

Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

WIRING STRUCTURE, THIN FILM TRANSISTOR ARRAY SUBSTRATE INCLUDING THE SAME, AND DISPLAY DEVICE

In a wiring conversion part which connects a lower conductive film to a first conductive film each functioning as a wiring, a first transparent conductive film is formed into a pattern in which it covers an end surface of the first conductive film, and an angle formed at a corner part in a portion of the first transparent conductive film making contact with a lower first insulating film (outside a width of the first conductive film) is larger than 90 degrees and smaller than 270 degrees or the corner part has an arc shape. A second transparent conductive film is connected to the lower conductive film and the first transparent conductive film, and the first transparent conductive film is connected to the first conductive film, so that the lower conductive film and the first conductive film are electrically connected to each other. 1. A wiring structure comprising:a first insulating film;a first conductive film formed on said first insulating film; anda first transparent conductive film formed on said first conductive film, whereinsaid first transparent conductive film covers at least one part of an end surface of said first conductive film, andan angle formed at a corner part of said first transparent conductive film in a region where said first transparent conductive film makes contact with said first insulating film is larger than 90 degrees and smaller than 270 degrees or the corner part has an arc shape.2. The wiring structure according to claim 1 , whereina shape of said first transparent conductive film is substantially similar to a shape of said first conductive film, andeach of said first transparent conductive film and said first conductive film has a substantially line-symmetric shape.3. The wiring structure according to claim 1 , whereinsaid first conductive film is a laminated film formed by laminating different kinds of conductive films.4. The wiring structure according to claim 3 , whereinan uppermost layer of said laminated film is a film made of ...

GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME

A method for producing a group III nitride semiconductor light-emitting device, by which a non-light-emitting region is easily formed, is disclosed. Mg is activated to convert a p-type layer into p-type, and a p-electrode is then formed on the p-type layer. An Ag paste is applied to a region on the p-electrode and overlapping an n-electrode formed in a subsequent step. Heat treatment is conducted to solidify the Ag paste, thereby forming an Ag paste solidified body. By this, a region overlapping the Ag paste solidified body in a planar view, of the p-type layer converts into a region having high resistance, and a high resistance region is formed. As a result, a region overlapping the high resistance region in a planar view, of a light-emitting layer becomes a non-light-emitting region. 1. A method for producing a group III nitride semiconductor light-emitting device having a part of a region of a light-emitting layer as a non-light-emitting region , the method comprising:a first step of sequentially laminating an n-type layer, a light-emitting layer and a p-type layer comprising a group III nitride semiconductor on a growth substrate;a second step of activating the p-type layer to p-type activation by heat treatment and then forming a p-contact electrode on the p-type layer;a third step of applying a metal paste comprising conductive metal particles dispersed in a solvent comprising a material containing hydrogen as a constituent element, to a desired region on the p-contact electrode; anda fourth step of solidifying the metal paste by heat treatment to form a part of a region of the p-type layer into a high resistance region, thereby forming a region overlapping a region having the metal paste applied thereto in a planar view, of the light-emitting layer into a non-light-emitting region.2. The method for producing a group III nitride semiconductor light-emitting device according to claim 1 ,wherein the p-contact electrode comprises Ag or an Ag alloy, andthe method ...

LIQUID CRYSTAL DISPLAY DEVICE AND FABRICATION METHOD OF A CONDUCTIVE SUBSTRATE

A liquid crystal display device includes: a first substrate; a second substrate spaced apart from the first substrate; and a plurality of liquid crystal molecules disposed between the first and second substrates. The first substrate includes a transparent substrate, an insulator layer formed on a surface of the transparent substrate and formed with a plurality of grooves, and a pixel electrode formed on a surface of the insulator layer and formed with a plurality of electrode slits. 1. A liquid crystal display device , comprising:a first substrate;a second substrate spaced apart from the first substrate; anda plurality of liquid crystal molecules disposed between the first and the second substrates,wherein the first substrate includes:a transparent substrate;an insulator layer formed on a surface of the transparent substrate and formed with a plurality of grooves; anda pixel electrode formed on a surface of the insulator layer and formed with a plurality of electrode slits.2. The liquid crystal display device of claim 1 , wherein the insulator layer further includes a plurality of spaced apart scan lines arranged in a first direction claim 1 , and a plurality of spaced apart data lines arranged in a second direction transverse to the first direction claim 1 , the scan lines being electrically isolated from the data lines claim 1 , the grooves extending in a first extending direction that forms an acute angle with the scan lines claim 1 , the acute angle ranging from 35 degrees to 55 degrees.3. The liquid crystal display device of claim 1 , wherein the grooves have a depth from the upper surface of the insulator layer ranging from 1500 Å to 3000 Å claim 1 , each of the grooves being defined by a bottom surface and two lateral surfaces connected to and extending upwardly from two opposite sides of the bottom surface claim 1 , the bottom surface and each of the lateral surfaces forming an angle larger than 90 degrees and up to 120 degrees.4. The liquid crystal display ...

Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structure

The light extraction surface of a nitride semiconductor light-emitting element, including a crystal plane other than a c plane, is subjected to a surface modification process to control its wettability, and then covered with a layer of fine particles. By etching that layer of fine particles after that, an unevenness structure, in which roughness curve elements have an average length (RSm) of 150 nm to 800 nm, is formed on the light extraction surface.

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film, a p-side interconnection section, an n-side interconnection section, a phosphor layer, and a metal film. The semiconductor layer is formed on a substrate which is then removed. The p-side interconnection section is provided on the insulating film and electrically connected to the p-side electrode. The n-side interconnection section is provided on the insulating film and electrically connected to the n-side electrode. The phosphor layer is provided on the first surface and includes a step portion continued to the side surface of the semiconductor layer. The metal film is provided on the side surface of the semiconductor layer and a side surface of the step portion of the phosphor layer. 1. A semiconductor light emitting device comprising:a semiconductor layer formed on a substrate which is then removed, the semiconductor layer including a first surface, a second surface opposite to the first surface, a side surface continued to the first surface, and a light emitting layer;a p-side electrode provided on the second surface in a region including the light emitting layer;an n-side electrode provided on the second surface in a region not including the light emitting layer;an insulating film covering the p-side electrode and the n-side electrode;a p-side interconnection section provided on the insulating film and electrically connected to the p-side electrode through a p-side via penetrating through the insulating film;an n-side interconnection section provided on the insulating film and electrically connected to the n-side electrode through an n-side via penetrating through the insulating film;a phosphor layer provided on the first surface and including a step portion continued to the side surface of the semiconductor layer; anda metal film provided on the side surface of the semiconductor layer and a side surface ...

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor light emitting device includes a light emitting unit, a first and second electrode, a first and second metal pillar, a sealing unit, a rectifying element, and a first and second interconnection. The light emitting unit includes a first and second semiconductor layer, and a light-emitting layer. The light-emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light-emitting layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first metal pillar and the second metal pillar. The rectifying element is provided below the first semiconductor layer, including a rectifying unit. 1. A semiconductor light emitting device comprising:a light emitting unit including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, the first semiconductor layer having a first conductivity type and having a first portion and a second portion, the light-emitting layer provided on the first portion, the second semiconductor layer having a second conductivity type and provided on the light-emitting layer;a first electrode provided on the second portion and electrically connected to the first semiconductor layer;a second electrode provided on the second semiconductor layer and electrically connected to the second semiconductor layer;a first metal pillar electrically connected to the first electrode, extending in a first direction from the first semiconductor layer to the second semiconductor layer, and having an end not parallel to the first direction;a second metal pillar electrically connected to the second electrode, extending in the first direction, and having an end not parallel to the first direction;a sealing unit for sealing ...

LIGHT-EMITTING DEVICE

Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending portion which does not overlap the second conductivity type semiconductor layer; a first electrode substantially joined with only the first extending portion or a part of the first extending part; and a second electrode substantially joined with only the second extending portion or a part of the second extending portion. 1. A light-emitting device , comprising: a first conductivity type semiconductor layer;', 'an active layer on the first conductivity type semiconductor layer; and', 'a second conductivity type semiconductor layer on the active layer;, 'a light-emitting stack with a length and a width, comprisinga conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first ...

LIQUID CRYSTAL DISPLAY DEVICE

A liquid crystal display device includes a terminal in which a first insulating film and a second insulating film are formed on a terminal metal, a contact hole is formed on the first insulating film and the second insulating film, and a first ITO is formed on the contact hole and the second insulating film. The terminal is connected to a different circuit through an ACF including conductive particles. The contact hole includes a region in which a second ITO is stacked on the first insulating film and the first ITO is stacked on the second ITO in the contact hole. A width s of a portion where the terminal metal contacts the first ITO in the contact hole is s Подробнее

PACKAGE AND METHOD FOR MANUFACTURING PACKAGE

A package for mounting a light emitting element includes a housing and a flat plate-shaped electrode. The electrode is exposed from a lower surface of the housing. An upper surface of the electrode includes a mounting area on which the light emitting element is mounted. An insulator is arranged on the upper surface of the electrode. An element connector is connected to the insulator. A tubular reflective portion extends from the element connector to a height corresponding to the upper surface of the housing. A terminal is arranged on the side surface of the housing and connected to the reflective portion. A recess accommodates the light emitting element. The recess is formed in an upper portion of the housing, and the recess is formed by the upper surface of the electrode, the element connector, and the reflective portion. 1. A package for mounting a light emitting element , the package comprising:a housing including an upper surface, a lower surface, and a side surface;a flat plate-shaped electrode including a lower surface and an upper surface, wherein the lower surface of the electrode is exposed from the lower surface of the housing, and the upper surface of the electrode includes a mounting area on which the light emitting element is mounted;an insulator arranged on a periphery of the upper surface of the electrode;a frame-shaped element connector connected to an upper surface of the insulator;a tubular reflective portion that extends from a periphery of the element connector to a height corresponding to the upper surface of the housing;a terminal arranged on the side surface of the housing and connected to the reflective portion; anda recess that accommodates the light emitting element, wherein the recess is formed in an upper portion of the housing, and the recess is formed by the upper surface of the electrode, the element connector, and the reflective portion.2. The package according to claim 1 , wherein the upper surface of the electrode and the element ...

LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

According to one embodiment, a light emitting element, includes: a semiconductor stacked body including a light emitting layer; a first upper electrode being connected directly to the semiconductor stacked body; at least one second upper electrode extending from the first upper electrode, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer; a lower electrode; a transparent conductive layer; an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer; a light reflecting layer; and a current-blocking layer, at least one slit being provided selectively in the current-blocking layer as viewed from a direction perpendicular to a major surface of the light emitting layer. 1. A light emitting element , comprising:a semiconductor stacked body including a light emitting layer;a first upper electrode provided on the semiconductor stacked body, the first upper electrode being connected directly to the semiconductor stacked body;at least one second upper electrode extending from the first upper electrode on the semiconductor stacked body, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer;a lower electrode provided under the semiconductor stacked body;a transparent conductive layer provided between the semiconductor stacked body and the lower electrode, the transparent conductive layer transmitting light emitted from the light emitting layer;an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer;a light reflecting layer provided between the transparent conductive layer and the lower electrode; anda current-blocking layer provided between the semiconductor stacked body and the transparent conductive layer and between the semiconductor stacked body and a pair of the first upper electrode and the second upper electrode, or ...

Semiconductor light emitting device

A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

A group III nitride semiconductor light-emitting element having a rectangular shape in a planar view, the element comprises an n-electrode connecting to an n-type layer and a p-electrode connecting to a p-type layer, on a same plane side; wherein the n-electrode has a n-wiring-shaped part that is wiring-shaped and extending along a first side of the rectangular shape; the p-electrode has a p-wiring-shaped part that is wiring-shaped and extending along the first side of the rectangular shape; when a distance that is between the n-wiring-shaped part and the p-wiring-shaped part is a, and a distance that is between the one side of the rectangular shape and at least one of the n-wiring-shaped part and the p-wiring-shaped part and that is nearest to the first side is b, the n-wiring-shaped part and the p-wiring-shaped part are arranged such that the distances a and b satisfy 1.65≦a/b≦7.00. 1. A group III nitride semiconductor light-emitting element having a rectangular shape in a planar view , the element comprising:an n-electrode connecting to an n-type layer and a p-electrode connecting to a p-type layer, on a same plane side;wherein the n-electrode has a n-wiring-shaped part that is wiring-shaped and extending along a first side of the rectangular shape;the p-electrode has a p-wiring-shaped part that is wiring-shaped and extending along the first side of the rectangular shape; andwhen a distance that is between the n-wiring-shaped part and the p-wiring-shaped part is a, and a distance that is between the one side of the rectangular shape and at least one of the n-wiring-shaped part and the p-wiring-shaped part and that is nearest to the first side is b, the n-wiring-shaped part and the p-wiring-shaped part are arranged such that the distances a and b satisfy 1.65≦a/b≦7.00.2. The group III nitride semiconductor light-emitting element according to claim 1 , wherein the n-wiring-shaped part and the p-wiring-shaped part are arranged such that the distances a and b satisfy ...

TOUCH SENSOR INTEGRATED TYPE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

A display device includes a plurality of first electrodes arranged on a substrate in parallel in a first direction; a plurality of second electrodes arranged in parallel in the first direction and a second direction crossing the first direction without contacting with the plurality of first electrodes; a plurality of first connecting wires, each first connecting wire being connected with at least one of the plurality of the first electrodes; and a plurality of second connecting wires, each second connecting wire connecting the second electrodes to each other in the second direction, wherein a touch driving voltage is supplied to the plurality of first connecting wires and a common voltage is supplied to the plurality of second connecting wires so that mutual capacitance is generated between the a plurality of first electrodes and the plurality of second electrodes. 1. A display device comprising:a plurality of first electrodes arranged in parallel on a first layer, where the plurality of first electrodes operate as a common electrode or a first touch electrode depending on a voltage applied to the first plurality of electrodes;a plurality of first sub-pixel electrodes disposed on at least one side of the first electrode on the first layer, and spaced from the first electrode;a plurality of second electrodes arranged in parallel on a second layer, where the plurality of second electrodes operate as a common electrode or a second touch electrode depending on a voltage applied to the second plurality of electrodes; anda plurality of second sub-pixel electrodes disposed on at least one side of the second electrode on the second layer, and spaced from the second electrode,wherein the plurality of first electrodes form a plurality of electrode lines arranged in a first direction, and each of the plurality of first electrodes overlaps with at least one of the plurality of second sub-pixel electrodes, andwherein the plurality of second electrodes form a plurality of ...

LED HAVING VERTICAL CONTACTS REDISTRUTED FOR FLIP CHIP MOUNTING

A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-Type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface though which light is emitted. A copper layer has a first portion electrically connected to and opposing the bottom surface of the p-type layer. A dielectric wall extends through the copper layer to isolate a second portion of the copper layer from the first portion. A metal shunt electrically connects the second portion of the copper layer to the top surface of the n-type layer. P-metal electrodes electrically connect to the first portion, and n-metal electrodes electrically connect to the second portion, wherein the LED structure forms a flip chip. Other embodiments of the methods and structures are also described. 1. A light emitting diode (LED) structure comprising:semiconductor layers, including a first conductivity layer of a first type of semiconductor, an active layer, and a second conductivity layer of a second type of semiconductor, the first conductivity layer having a an interior surface adjacent to the active layer and an exterior surface, and the second conductivity layer having an interior surface adjacent to the active layer and an exterior surface though which light is emitted;a first metal layer parallel to the exterior surface of the first conductivity layer and having first and second portions, the first portion being electrically connected to the exterior surface of the first conductivity layer;a metal shunt electrically connecting the second portion of the first metal layer to the exterior surface of the second conductivity layer;one or more first electrodes electrically connected to the first portion of the first metal layer; andone or more second electrodes electrically connected to the second portion of the first metal layer such that the LED structure forms a flip chip,wherein the first portion is electrically isolated from the second ...

Led with surface roughening

An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a roughened emitting-side surface to further enhance light extraction.

LIGHT EMITTING ELEMENT AND METHOD OF PRODUCING THE SAME

A light emitting element includes: a substrate; a first electrically conductive semiconductor layer located on the substrate; a light emitting layer located on a top surface of the first electrically conductive semiconductor layer; a second electrically conductive semiconductor layer located on a top surface of the light emitting layer; a positive electrode located on a top surface of the second electrically conductive semiconductor layer; and a negative electrode at least partially located on a side surface of the first electrically conductive semiconductor layer. 1. A light emitting element , comprising:a substrate;a first electrically conductive semiconductor layer located on the substrate;a light emitting layer located on a top surface of the first electrically conductive semiconductor layer;a second electrically conductive semiconductor layer located on a top surface of the light emitting layer;a positive electrode located on a top surface of the second electrically conductive semiconductor layer; anda negative electrode at least partially located on a side surface of the first electrically conductive semiconductor layer.2. The light emitting element according to claim 1 , wherein the negative electrode is further at least partially located on the surface substantially parallel to the top surface of the first electrically conductive semiconductor layer.3. The light emitting element according to claim 1 , wherein the negative electrode is further at least partially located on a side surface of the light emitting layer claim 1 , on a side surface of the second electrically conductive semiconductor layer claim 1 , and on the top surface of the second electrically conductive semiconductor layer.4. The light emitting element according to claim 1 , wherein the side surface of the first electrically conductive semiconductor layer on which the negative electrode is formed is an inclined surface.5. The light emitting element according to claim 2 , wherein the side ...

METHOD FOR MANUFACTURING LED PACKAGE

A method of manufacturing an LED package including steps: providing an electrode, the electrode including a first electrode, a second electrode, a channel defined between the first electrode and the second electrode, the first electrode and the second electrode arranged with intervals mutually, a cavity arranged on the first electrode, and the cavity communicating with the channel; arranging an LED chip electrically connecting with the first electrode and the second electrode and arranged inside the cavity; providing a shield covering the first electrode and the second electrode; injecting a transparent insulating material to the cavity via the channel, and the first electrode, the second electrode, and the shield being interconnected by the transparent insulating material; solidifying the transparent insulating material to obtain the LED package. 1. A method of manufacturing an LED package comprising steps:providing an electrode, the electrode including a first electrode, a second electrode, a channel defined between the first electrode and the second electrode, the first electrode and the second electrode arranged with intervals mutually, a cavity arranged on the first electrode, and the cavity communicating with the channel;arranging an LED chip electrically connecting with the first electrode and the second electrode and arranged inside the cavity;providing a shield covering the first electrode and the second electrode;injecting a transparent insulating material to the cavity via the channel, and the first electrode, the second electrode, and the shield being interconnected by the transparent insulating material;solidifying the transparent insulating material to obtain the LED package.2. The method of claim 1 , wherein the shield is a lens claim 1 , the lens covers the electrodes claim 1 , the lens comprises a light emitting surface and a light incident surface claim 1 , a protrusion portion is formed on the light emitting surface claim 1 , a space is formed by ...

SOLID STATE LIGHTING DEVICES WITH LOW CONTACT RESISTANCE AND METHODS OF MANUFACTURING

Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a contact on one of the first or second semiconductor materials. The contact includes a first conductive material and a plurality of contact elements in contact with one of the first or second conductive materials. The contact elements individually include a portion of a second conductive material that is different from the first conductive material. 1. A solid state lighting (SSL) device , comprising:a first semiconductor material;a second semiconductor material spaced apart from the first semiconductor material;an active region between the first and second semiconductor materials; anda contact on one of the first and second semiconductor materials, the contact including a first material that is transparent and conductive and a second material having a generally uniform composition, the second material being in contact with both the first material and the one of the first and second semiconductor materials, wherein the second material forms an Ohmic contact with both the first material and the one of the first and second semiconductor material.2. The SSL device of wherein:the first material includes at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide;the second material includes silver; andthe first material encapsulates the second material.3. The SSL device of wherein:the first material includes at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide;the second material includes silver; andthe first material is also in contact with the first semiconductor material.4. The SSL device of wherein:the first material includes at least ...

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE DISPLAY APPARATUS

A display apparatus includes a base substrate and a buffer layer disposed on the base substrate. The display apparatus further includes an oxide semiconductor layer disposed on the buffer layer and including a source electrode, a drain electrode, and a channel portion. The display apparatus further includes a gate insulating layer disposed on the channel portion, a gate electrode disposed on the gate insulating layer, and a protective layer disposed on the gate electrode and the buffer layer and having a contact hole. The display apparatus further includes a transparent electrode overlapping a portion of the protective layer and electrically connected to one of the source electrode and the drain electrode through the contact hole. The transparent electrode includes a transparent metal layer and a transparent conductive oxide layer overlapping the transparent metal layer. 1. A display apparatus comprising:a base substrate;a buffer layer disposed on the base substrate;an oxide semiconductor layer disposed on the buffer layer and including a source electrode, a drain electrode, and a channel portion;a gate insulating layer disposed on the channel portion;a gate electrode disposed on the gate insulating layer;a protective layer disposed on the gate electrode and the buffer layer and having a first contact hole; anda first transparent electrode overlapping a first portion of the protective layer and electrically connected to one of the source electrode and the drain electrode through the first contact hole, wherein the first transparent electrode includes a first transparent metal layer and a first transparent conductive oxide layer overlapping the first transparent metal layer.2. The display apparatus of claim 1 , further comprising an oxide insulating layer overlapping a second portion of the protective layer and abutting the first transparent metal layer.3. The display apparatus of claim 2 , wherein the first transparent metal layer comprises titanium and has a ...

Metal Oxide Thin Film Substrate, Method Of Fabricating The Same, Photovoltaic Cell And OLED Including The Same

A metal oxide thin film substrate which can increase light trapping efficiency and light extraction efficiency, a method of fabricating the same and a photovoltaic cell and organic light-emitting device (OLED) including the same. The metal oxide thin film substrate includes a base substrate, and a metal oxide thin film formed on the base substrate. The metal oxide thin film has voids which are formed inside the metal oxide thin film to scatter light. 1. A metal oxide thin film substrate comprising:a base substrate; anda metal oxide thin film formed on the base substrate, the metal oxide thin film having voids which are formed inside the metal oxide thin film to scatter light.2. The metal oxide thin film substrate of claim 1 , wherein the metal oxide thin film comprises:a first metal oxide thin film formed on the base substrate, and having a first texture on a surface thereof; anda second metal oxide thin film formed on the first metal oxide thin film, and having a second texture on a surface of thereof, the second metal oxide thin film comprising an assembly of unit elements, a width of each of the unit elements increasing in a direction toward an upper end such that the second metal oxide thin film defines the voids together with the first metal oxide thin film.3. The metal oxide thin film substrate of claim 2 , wherein the voids are connected to each other in a direction parallel to the base substrate.4. The metal oxide thin film substrate of claim 3 , wherein a width of each of the voids ranges from 50 to 400 nm.5. The metal oxide thin film substrate of claim 1 , wherein the metal oxide thin film comprises a material claim 1 , a refractive index of which is higher than a refractive index (1.0) of the voids claim 1 , so as to increase a scattering characteristic.6. The metal oxide thin film substrate of claim 5 , wherein the metal oxide thin film comprises one selected from the group consisting of ZnO claim 5 , SnO claim 5 , SiO claim 5 , TiOand NiO.7. The metal ...

Light Emitting Diode with a Current Concentrating Structure

A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED. 1. A light-emitting diode (LED) comprising:a transparent insulating layer; andat least one transparent conductive oxide layer substantially enclosing the transparent insulating layer,wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.2. The LED of claim 1 , wherein the at least one transparent conductive oxide layer comprises:a first transparent conductive oxide layer; anda second transparent conductive oxide layer,wherein the transparent insulating layer is substantially sandwiched between the first and second transparent conductive oxide layers.3. The LED of claim 2 , wherein the transparent insulating layer has an inward recess relative to the first transparent conductive oxide layer of about 1-50 microns.4. The LED of claim 3 , wherein the inward recess is about 20 microns or less.5. The LED of claim 3 , wherein the first and second transparent oxide layers are electrically coupled at the peripheral region of the LED corresponding to the inward recess.6. The LED of claim 3 , further comprising:a sapphire substrate;a light-emitting epitaxy layer disposed over the sapphire substrate and comprising an n-type GaN-based epitaxial layer, an active layer, and a p-type GaN-based epitaxial layer;a p-electrode formed over the second transparent conductive oxide layer; andan n-electrode formed over the n-type GaN-based epitaxial layer,wherein the first transparent conductive oxide layer is over the p-type GaN-based epitaxial layer, ...

LIGHT EMITTING DEVICE, ELECTRODE STRUCTURE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM

Provided are a light emitting device, an electrode structure, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer comprising a first semiconductor layer, a second semiconductor layer, and an active layer. An electrode disposed on a top surface of the first semiconductor layer, a first layer includes a transmittive oxide material between the top surface of the first semiconductor layer and the electrode, and a second layer disposed is disposed between the first layer and the electrode, wherein the first layer is formed in a different material from the second layer, wherein the electrode comprises a lower portion connected to the first semiconductor layer and an upper portion on a top surface of the second layer. 1. A light emitting device comprising:a light emitting structure layer comprising a first semiconductor layer, a second semiconductor layer under a top surface of the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;an electrode on a top surface of the first semiconductor layer;a first layer including a transmittive oxide material between the top surface of the first semiconductor layer and the electrode; anda second layer disposed between the first layer and the electrode to transmit a light incident through the first layer,wherein the first layer is formed in a different material from the second layer,wherein the electrode comprises a lower portion connected to the first semiconductor layer and an upper portion on a top surface of the second layer.2. The light emitting device of claim 1 , wherein the lower portion of the electrode is directly contacted with the top surface of the first semiconductor layer.3. The light emitting device of claim 1 , wherein a top surface of the upper portion of the electrode has a width wider than that of a bottom surface of the lower portion.4. The light emitting device of claim 1 , ...

DISTRIBUTED CURRENT BLOCKING STRUCTURES FOR LIGHT EMITTING DIODES

An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers. 121-. (canceled)22. A light emitting device comprising:a semiconductor layer;a strip-shaped electrode formed on the semiconductor layer and including at least one opening, wherein current flows through the strip-shaped electrode causes light to be emitted from the light emitting device;a strip-shaped current blocking structure disposed directly underneath the strip-shaped electrode;a first row of a plurality of current blocking structures formed along a periphery of the opening; anda second row of a plurality of current blocking structures formed parallel to the first row such that the first row is disposed between the second row and the strip-shaped current blocking structure,wherein a proportion of a region covered by the plurality of current blocking structures decreases in a direction away from the strip-shaped current blocking structure in the plan view.23. The light emitting device of claim 22 , ...

Electrode Foil and Electronic Device

There is provided an electrode foil, which can show superior light scattering, while preventing short circuit between electrodes. The electrode foil of the present invention comprises a metal foil having a thickness of from 1 μm to 250 μm, wherein the electrode foil comprises, on at least one outermost surface thereof, a light-scattering surface having a Pv/Pp ratio of 2.0 or higher, wherein the Pv/Pp ratio is a ratio of a maximum profile valley depth Pv of a profile curve to a maximum profile peak height Pp of the profile curve as measured in a rectangular area of 181 μm×136 μm in accordance with JIS B 0601-2001. 1. An electrode foil comprising a metal foil having a thickness of from 1 μm to 250 μm , wherein the electrode foil comprises , on at least one outermost surface thereof , a light-scattering surface having a Pv/Pp ratio of 2.0 or higher , wherein the Pv/Pp ratio is a ratio of a maximum profile valley depth Pv of a profile curve to a maximum profile peak height Pp of the profile curve as measured in a rectangular area of 181 μm×136 μm in accordance with JIS B 0601-2001.2. The electrode foil according to claim 1 , wherein the Pv/Pp ratio is 2.5 or higher.3. The electrode foil according to claim 1 , wherein the light-scattering surface has an arithmetic average roughness Ra of 60 nm or less as measured in accordance with JIS B 0601-2001.4. The electrode foil according to claim 1 , having a thickness of from 10 μm to 150 μm.5. The electrode foil according to claim 1 , having a thickness of from 1 μm to 50 μm.6. The electrode foil according to claim 1 , wherein the metal foil is a copper foil.7. The electrode foil according to claim 1 , further comprising a reflective layer provided at least one side of the metal foil claim 1 , wherein a surface of the reflective layer constitutes the light-scattering surface.8. The electrode foil according to claim 1 , further comprising a transparent or translucent buffer layer provided directly on at least one side of the ...

SEMICONDUCTOR LIGHT EMITTING ELEMENT

A semiconductor light emitting element suppressing non-uniformity in light emission on a light emitting surface is provided. An n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated in order, and a translucent electrode film is laminated on the p-type semiconductor layer and a p-electrode is provided on the translucent electrode film. On the other hand, an n-electrode is provided on a semiconductor layer exposure surface that exposes the n-type semiconductor layer. The p-electrode includes a connecting portion having a circular planar shape and an extending portion that extends like a long and slender strip from the connecting portion to encircle and face the n-electrode. Holes in the translucent electrode film are provided such that the density thereof is decreased along with a move from the n-electrode side toward the p-electrode side. 1. A semiconductor light emitting element comprising:a first semiconductor layer composed of a group III-V semiconductor having a first conduction type;a light emitting layer composed of a group III-V semiconductor, which is provided on and in contact with the first semiconductor layer, the light emitting layer emitting light by passing a current;a second semiconductor layer composed of a group III-V semiconductor having a second conduction type that is opposite to the first conduction type, the second semiconductor layer being provided on and in contact with the light emitting layer;a translucent electrode film provided on and in contact with the second semiconductor layer, the translucent electrode film having permeability to the light emitted from the light emitting layer;a first electrode provided on and in contact with part of the translucent electrode film, the first electrode serving as one of terminals for passing a current through the light emitting layer; anda second electrode connected to the first semiconductor layer and provided on the same surface side with the first ...

SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch. 119-. (canceled)20. A semiconductor light emitting device comprising:a first conductive semiconductor layer including first and second areas in a plan view;an active layer disposed on the second area;a second conductive semiconductor layer disposed on the active layer;first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively;a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; anda second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch,wherein the first and second electrode branches have a stripe shape in the plan view.21. A semiconductor light emitting device comprising:a first conductive semiconductor layer including first and second areas;an active layer disposed on the second area;a second conductive semiconductor layer disposed on the active layer;first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively;an insulating part disposed on the first and second conductive semiconductor layers, the insulating part allows at least a portion of each of upper surfaces of the first and second electrode branches to be exposed,a first electrode pad covering the upper surface of the first electrode branch and at least a portion of upper surface of ...

LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM

Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode electrically connected to the first conductive type semiconductor layer, an insulating support member under the light emitting structure layer, and a plurality of conductive layers between the light emitting structure layer and the insulating support member. At least one of the plurality of conductive layers has a width greater than that of the light emitting structure layer and includes a contact part disposed further outward from a sidewall of the light emitting structure layer. 1. A light emitting device comprising:a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed a lower surface of the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;a first electrode electrically connected to the first conductive type semiconductor layer;an insulating support member under the light emitting structure layer;a plurality of conductive layers between the light emitting structure layer and the insulating support member; anda second electrode disposed on a top surface of one of the plurality of conductive layers and connected to the plurality of conductive layers,wherein at least two of the plurality of conductive layers has a width greater than that of the light emitting structure layer,wherein one of the plurality of conductive layers comprises a first contact part disposed further outward from a first sidewall of the light emitting structure layer and a second contact part disposed further outward from a second sidewall of the ...

LIGHT EMITTING DIODE CHIP

A Light emitting diode (LED) chip includes a substrate, an N-type semiconductor layer, a luminous layer, a P-type semiconductor layer, an N-type electrode layer and a P-type electrode layer. The N-type semiconductor layer is mounted on the substrate. The luminous layer is mounted on the N-type semiconductor layer. The P-type semiconductor layer is mounted on the luminous layer. The N-type electrode layer is mounted on the N-type semiconductor layer. The P-type electrode layer is mounted on the P-type semiconductor layer, and includes a plurality of enclosed circuit patterns. These enclosed circuit patterns respectively encompass different parts of the N-type electrode layer. 1. A light emitting diode (LED) chip , comprising:a substrate;an N-type semiconductor layer mounted on the substrate;a luminous layer mounted on the N-type semiconductor layer;a P-type semiconductor layer mounted on the luminous layer;an N-type electrode layer mounted on the N-type semiconductor layer; anda P-type electrode layer mounted on the P-type semiconductor layer, wherein the P-type electrode layer comprises a plurality of enclosed circuit patterns, and the enclosed circuit patterns respectively encompass different parts of the N-type electrode layer.2. The LED chip of claim 1 , wherein the enclosed circuit patterns are adjoined in a column claim 1 , and the N-type electrode layer comprises a plurality of N-type electrode patterns respectively encompassed by the enclosed circuit patterns.3. The LED chip of claim 2 , wherein each of some or all of the N-type electrode patterns comprises an N-type bonding area claim 2 , and each of some or all of the enclosed circuit patterns comprises a P-type bonding area claim 2 , and the P-type bonding area of any one of said each of some or all of the enclosed circuit patterns is positioned at a first corner of the enclosed circuit pattern farthest from the N-type bonding area of the N-type electrode pattern that the enclosed circuit pattern encloses. ...

VERTICAL STRUCTURE LEDS

A vertical structure light-emitting device includes a conductive support, a light-emitting semiconductor structure disposed on the conductive support structure, the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, a first electrode electrically connected to the first-type semiconductor layer, a second electrode electrically connected to the second-type semiconductor layer, wherein the second electrode has a first electrode surface, a side electrode surface and a second electrode surface, wherein the first electrode surface, relative to the second electrode surface, is proximate to the semiconductor structure; and wherein the second electrode surface is opposite to the first electrode surface, and a passivation layer disposed on the side semiconductor surface and the second semiconductor surface. 1. A light-emitting device , comprising:a conductive support structure;a semiconductor structure disposed on the conductive support structure, wherein the semiconductor structure comprises a first-type semiconductor layer, an active layer and a second-type semiconductor layer, wherein the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, wherein the first semiconductor surface, relative to the second semiconductor surface, is proximate to the conductive support structure, and wherein the second semiconductor surface is opposite to the first semiconductor surface;a first electrode electrically connected to the first-type semiconductor layer;a second electrode electrically connected to the second-type semiconductor layer, wherein the second electrode has a first electrode surface, a side electrode surface and a second electrode surface, wherein the first electrode surface, relative to the second electrode surface, is proximate to the semiconductor structure; and wherein the second electrode surface is opposite to the first ...

METHOD FOR FORMING CURRENT DIFFUSION LAYER IN LIGHT EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME

A method of forming a current diffusion layer is provided that comprises providing an epitaxial wafer. The method further comprises depositing ITO source material on the epitaxial wafer to form a base ITO layer by a direct current electron gun and depositing ZnO source material, during simultaneous deposition of the ITO source material, on the base ITO layer to form a ZnO doped ITO layer by a pulse current electron gun. The ZnO source material is deposited at a deposition rate higher than the rate at which the ITO source material is deposited. Generation and termination of current may be controlled by adjusting a duty cycle of pulse current provided by the pulse current electron gun and result in discontinuous deposition of the ZnO source material. The method further comprises depositing the ITO source material on the ZnO doped ITO layer to cover the ZnO doped ITO layer and form a finished ITO layer. 1. A method for forming a current diffusion layer in a light emitting diode device , the method comprising:providing an epitaxial wafer, the epitaxial wafer comprising a substrate, an n-type nitride layer formed on the substrate, a light emitting diode layer formed on the n-type nitride layer, and a p-type nitride layer formed on the light emitting diode layer;depositing ITO source material on the epitaxial wafer to form a base ITO layer by a direct current electron gun;depositing ZnO source material, during simultaneous deposition of the ITO source material, on the base ITO layer to form a ZnO doped ITO layer by a pulse current electron gun, the ZnO source material being deposited at a deposition rate higher than the rate at which the ITO source material is deposited, generation and termination of current being controlled by adjusting duty cycle of pulse current provided by the pulse current electron gun and resulting in discontinuous deposition of the ZnO source material; anddepositing the ITO source material on the ZnO doped ITO layer to cover the ZnO doped ITO layer ...

SEMICONDUCTOR STRUCTURE FOR EMITTING LIGHT, AND METHOD FOR MANUFACTURING SUCH A STRUCTURE

A semiconductor structure for emitting light including a substrate made of a first semi-conductor material having a first type of conductivity, a first electrical contact, a second semiconductor material, having a second type of conductivity to form a junction, a second electrical contact contacting the second semiconductor material, a polarizer configured to polarize at least one portion of the semiconductor structure, and a plurality of micro- or nano-structures each including a first end connected to the substrate. Each micro- or nano-structure includes at least one portion made from the second semiconductor material, or each micro- or nano-structure having the first type of conductivity, a second end contacting the second semiconductor material to form the junction. 120-. (canceled)21. A semiconductor structure for emitting light , comprising:a substrate made of a first semi-conductor material having a first type of conductivity, the substrate including a first face and a second face;a first electrical contact on the first face;at least one second semiconductor material, having a second type of conductivity forming a first portion of the semiconductor structure and in electrical contact with a second portion of the semiconductor structure having the first conductivity so as to form a junction;a second electrical contact electrically connected with the second semiconductor material;a polarization means configured to polarize at least one portion of the semiconductor structure among the first portion and the second portion, the polarization means being laid out so that its polarization leads to an inversion of type of carriers in the portion by injection into the portion of majority carriers of the other portion, so as to move the junction in the portion;a plurality of micro- or nano-structures each including a first end and a second end, each of the first ends being connected to the second face, each micro- or nano-structure comprising at least one portion made ...

LIGHTING DEVICE

For integration of light-emitting elements and for suppression of a voltage drop, plural stages of light-emitting element units provided over a substrate having an insulating surface and each including a plurality of light-emitting elements which is connected in parallel are connected in series. Further, besides a lead wiring with a large thickness, a plurality of auxiliary wirings with different widths and different thicknesses is used, and the arrangement of the wirings, electrodes of the light-emitting elements, and the like is optimized. Note that in the lighting device, light emitted from the light-emitting element passes through the substrate having an insulating surface and then is extracted. 1. (canceled)2. A lighting device comprising: a first electrode comprising a transparent conductive material;', 'a second electrode comprising metal;', 'a layer between the first electrode and the second electrode; and', 'an insulating layer over the first electrode and under the layer, the insulating layer having an opening;, 'a light emitting element comprisinga first conductive layer electrically connected to the first electrode through a second conductive layer, wherein the first conductive layer comprises metal and the second conductive layer comprises an alloy; anda third conductive layer electrically connected to the second electrode, the third conductive layer having a comb-like shape.3. The lighting device according to claim 2 , wherein a resistivity of the first conductive layer is lower than a resistivity of the first electrode.4. The lighting device according to claim 2 , wherein the second conductive layer has a narrower width than the first conductive layer.5. The lighting device according to claim 2 , wherein the second conductive layer is thinner than the first conductive layer.6. The lighting device according to claim 2 ,wherein the metal comprised in the first conductive layer is aluminum, andwherein the alloy comprised in the second conductive layer is ...

SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer. 118.-. (canceled)19. A semiconductor light emitting device having a first conductivity type semiconductor layer , an active layer , a second conductivity type semiconductor layer , a second electrode layer , and insulating layer , a first electrode layer , and a conductive substrate sequentially laminated ,wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, andthe first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.20. The semiconductor light emitting device of claim 19 , further comprising an electrode pad unit formed at the exposed area of the second electrode layer.21. The semiconductor light emitting ...

Electrode Foil and Electronic Device

An electrode foil functioning as both a supporting substrate and an electrode and suitable for low-cost high-efficiency production of flexible electronic devices having functionality on their both sides is provided. An electrode foil of the present invention comprises a metal foil, wherein the metal foil has a thickness of 1 to 250 μm, and wherein the outermost surfaces on both sides of the electrode foil are ultra-smooth surfaces each having an arithmetic mean roughness Ra of 30.0 nm or less as determined in accordance with JIS B 0601-2001. 1. An electrode foil comprising a metal foil , wherein the metal foil has a thickness of 1 to 250 μm , and wherein the outermost surfaces on both sides of the electrode foil are ultra-smooth surfaces each having an arithmetic mean roughness Ra of 30.0 nm or less as determined in accordance with JIS B 0601-2001.2. The electrode foil according to claim 1 , wherein the arithmetic mean roughness Ra is 10.0 nm or less.3. The electrode foil according to claim 1 , wherein the electrode foil is used as an electrode functioning as a supporting substrate for a flexible electronic device.4. The electrode foil according to claim 1 , wherein the electrode foil is used as an electrode functioning as a supporting substrate for an electronic device having functionality on both sides.5. The electrode foil according to claim 1 , wherein the electrode foil is used as an electrode for at least one selected from the group consisting of a light-emitting element claim 1 , a photoelectric element claim 1 , and a thermoelectric element.6. The electrode foil according to claim 1 , wherein the metal foil has a thickness of 10 μm to 150 μm.7. The electrode foil according to claim 1 , wherein the metal foil has a thickness of 1 μm to 50 μm.8. The electrode foil according to claim 1 , wherein the metal foil is a nonmagnetic metal foil.9. The electrode foil according to claim 1 , wherein the metal foil is a copper foil.10. The electrode foil according to ...

LIGHT EMITTING DIODE WITH ZnO EMITTER

A light emitting diode (LED) includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. A p-type confinement layer is provided on the p-type substrate. An emission layer is provided on the p-type confinement layer. An n-type confinement layer is provided on the emission layer. A transparent II-VI n-type contact layer is formed on the n-type confinement layer as a replacement for a current spreading layer, a III-V contact layer and an n-type ohmic contact. 1. A light emitting diode (LED) , comprising:a p-type ohmic contact;a p-type substrate in direct contact with the p-type ohmic contact;a p-type confinement layer directly on the p-type substrate;an emission layer on the p-type confinement layer;an n-type confinement layer on the emission layer; anda transparent II-VI n-type contact layer formed directly on the n-type confinement layer as a replacement for a current spreading layer, a III-V contact layer and an n-type ohmic contact.2. The LED as recited in claim 1 , wherein the II-VI n-type contact layer includes ZnO.3. The LED as recited in claim 2 , wherein the ZnO is Al doped.4. The LED as recited in claim 1 , wherein the II-VI n-type contact layer is between about 200 nm to about 700 nm in thickness.5. The LED as recited in claim 1 , wherein the LED produces red light.6. The LED as recited in claim 1 , wherein the II-VI n-type contact layer includes an amorphous phase.7. The LED as recited in claim 1 , wherein the p-type substrate claim 1 , the p-type confinement layer claim 1 , the emission layer and the n-type confinement layer include III-V materials.8. The LED as recited in claim 1 , wherein the emission layer includes AlGaInP.9. A light emitting diode (LED) claim 1 , comprising:a p-type monocrystalline III-V substrate;a p-type ohmic contact formed directly on the substrate on a first side;a p-type confinement layer formed directly on a second side on the substrate opposite the first side;an emission layer formed on the ...

Light-emitting device

Device successively including a substrate including a metal layer capable of reflecting a radiation; a first layer of a III/N type alloy, p-type doped, and including a first surface, opposite the metal layer, the first surface being provided with cavities; a light-emitting layer made of a III/N-type alloy, capable of generating the radiation; a second layer of a III/N-type alloy, n-type doped, having the radiation coming out therethrough; wherein a non-metallic filling material transparent in the spectral range is arranged within the cavities. 2. The device according to claim 1 , wherein the filling material forms a planar layer extending between the metal layer and the first surface of the first layer claim 1 , and the filling material is electrically conductive.3. The device according to claim 2 , wherein the filling material is an oxide claim 2 , preferably selected from the group comprising indium-tin oxide claim 2 , aluminum-doped zinc oxide ZnO claim 2 , indium-doped zinc oxide ZnO claim 2 , gallium-doped zinc oxide ZnO.4. The device according to claim 1 , wherein the filling material is flush with the first surface of the first layer claim 1 , and wherein the first surface of the first layer is in contact with the metal layer.5. The device according to claim 4 , wherein the filling material is selected from the group comprising titanium dioxide TiO claim 4 , silicon dioxide SiO claim 4 , zinc oxide ZnO claim 4 , aluminum-doped zinc oxide ZnO claim 4 , indium-doped zinc oxide ZnO claim 4 , gallium-doped zinc oxide ZnO claim 4 , silicon nitride SiN claim 4 , indium tin oxide.6. The device according to claim 1 , wherein the filling material forms dielectric balls claim 1 , and wherein the first surface of the first layer is in contact with the metal layer.7. The device according to claim 6 , wherein the filling material is selected from the group comprising titanium dioxide TiO claim 6 , silicon nitride SiN claim 6 , silicon dioxide SiO claim 6 , zinc oxide ZnO. ...

LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients. 112-. (canceled)13. A light emitting diode , comprising:a substrate;a nitride light emitting structure disposed on the substrate; anda transparent electrode layer disposed on the nitride light emitting structure and includes a plurality of protrusions, wherein each of the plurality of protrusions has a lower portion and an upper portion, anda side of the lower portion and a side of the upper portion have different gradients.14. The light emitting diode of claim 13 , wherein the transparent electrode layer includes zinc oxide.15. The light emitting diode of claim 13 , wherein the side of the lower portion is substantially vertical to a bottom surface of the transparent electrode.16. The light emitting diode of claim 13 , wherein the side of the upper portion has a gradient of 20 to 80° with respect to the side of the lower portion.17. The light emitting diode of claim 13 , wherein the side of the upper portion has a gradient continuously decreasing or increasing with respect to the side of the lower portion.18. The light emitting diode of claim 13 , wherein a horizontal width of the upper portion is smaller than that of the lower portion.19. The light emitting diode of claim 13 , wherein each of the plurality of protrusions has a disc shape or a hexagonal prism shape.20. The light emitting diode of claim 13 , wherein the nitride light ...

Multi-Layered Contact to Semiconductor Structure

A multi-layered contact to a semiconductor structure and a method of making is described. In one embodiment, the contact includes a discontinuous Chromium layer formed over the semiconductor structure. A discontinuous Titanium layer is formed directly on the Chromium layer, wherein portions of the Titanium layer extend into at least some of the discontinuous sections of the Chromium layer. A discontinuous Aluminum layer is formed directly on the Chromium layer, wherein portions of the Aluminum layer extend into at least some of the discontinuous sections of the Titanium layer and the Chromium layer. 1. A device , comprising:a semiconductor structure; a discontinuous Chromium layer formed over the semiconductor structure;', 'a discontinuous Titanium layer formed directly on the Chromium layer, wherein portions of the Titanium layer extend into at least some discontinuous sections of the Chromium layer; and', 'a discontinuous Aluminum layer formed directly on the Titanium layer, wherein portions of the Aluminum layer extend into at least some discontinuous sections of the Titanium layer and the Chromium layer., 'a contact to the semiconductor structure, comprising2. The device of claim 1 , wherein at least some portions of the Aluminum layer extend only into some discontinuous sections of the Titanium layer and other portions of the Aluminum layer extend into at least some discontinuous sections of both the Titanium layer and the Chromium layer.3. The device of claim 1 , further comprising an ultraviolet transparent material formed in at least some discontinuous sections of the Aluminum layer.4. The device of claim 3 , wherein the ultraviolet transparent material interpenetrates into at least some discontinuous sections of the Titanium layer and the Chromium layer.5. The device of claim 4 , wherein at least some portions of the ultraviolet transparent material interpenetrate only to at least some discontinuous sections of the Titanium layer and other portions of the ...

Light emitting device

Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, disposed on the substrate, a first electrode disposed on the first conductivity-type semiconductor layer, and a second electrode disposed on the second conductivity-type semiconductor layer. The first electrode includes an ohmic contact layer disposed on the first conductivity-type semiconductor layer and formed of a transparent conductive oxide and a reflective layer disposed on the ohmic contact layer, and the thickness of the ohmic contact layer is 1 nm or more and less than 60 nm.

OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

An optoelectronic device, comprising: a first semiconductor layer comprising four boundaries, a corner formed by two of the neighboring boundaries, a first surface, and a second surface opposite to the first surface; a second semiconductor layer formed on the first surface of the first semiconductor layer; a second conductive type electrode formed on the second semiconductor layer; and two first conductive type electrodes formed on the first surface, wherein the first conductive type electrodes are separated and formed a pattern. 1. An optoelectronic device , comprising:a first semiconductor layer comprising four boundaries, a corner formed by two of the neighboring boundaries, a first surface, and a second surface opposite to the first surface;a second semiconductor layer formed on the first surface of the first semiconductor layer;a second conductive type electrode formed on the second semiconductor layer; andtwo first conductive type electrodes formed on the first surface, wherein the first conductive type electrodes are separated and formed a pattern.2. The optoelectronic device of claim 1 , further comprising a substrate formed on the second surface of the first semiconductor layer.3. The optoelectronic device of claim 1 , further comprising a first semiconductor layer claim 1 , a second semiconductor layer claim 1 , and an active layer formed between the first semiconductor layer and the second semiconductor layer.4. The optoelectronic device of claim 1 , wherein the pattern are selected from the following:(i) one or more first parts of the first conductive type electrode, wherein the first part of the first conductive type electrode is formed on the corner of the first semiconductor layer;(ii) one or more second parts of the first conductive type electrode, wherein the second part of the first conductive type electrode is surrounded by the second semiconductor layer;(iii) one or more third parts of the first conductive type electrode, wherein the third part ...

LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE

In a light-emitting element a light-emitting layer a second conductivity type semiconductor layer a transparent electrode layer a reflecting electrode layer and an insulating layer are stacked in this order on a first conductivity type semiconductor layer while a first electrode layer and a second electrode layer are stacked on the insulating layer in an isolated state. The light-emitting element includes a plurality of insulating tube layers discretely arranged in plan view, passing through the reflecting electrode layer the transparent electrode layer the second conductivity type semiconductor layer and the light-emitting layer continuously from the insulating layer and reaching the first conductivity type semiconductor layer first contacts continuous from the first electrode layer connected to the first conductivity type semiconductor layer through the insulating layer and the insulating tube layers and second contacts continuous from the second electrode layer passing through the insulating layer to be connected to the reflecting electrode layer 1. A light-emitting element comprising:a first conductivity type semiconductor layer;a light-emitting layer stacked on the first conductivity type semiconductor layer;a second conductivity type semiconductor layer stacked on the light-emitting layer;a transparent electrode layer, stacked on the second conductivity type semiconductor layer, transparent with respect to an emission wavelength of light emitted from the light-emitting layer;a reflecting electrode layer, stacked on the transparent electrode layer, reflecting light transmitted through the transparent electrode layer;an insulating layer stacked on the reflecting electrode layer;a first electrode layer stacked on the insulating layer; anda second electrode layer stacked on the insulating layer in a state isolated from the first electrode layer, whereinrespective regions of the light-emitting layer, the second conductivity type semiconductor layer, the transparent ...

TRANSPARENT CONDUCTIVE STRUCTURE AND FORMATION THEREOF

Briefly, an embodiment comprises fabricating and/or uses of one or more zinc oxide crystals to form a transparent conductive structure. 122-. (canceled)23. A method of fabricating a transparent conductive structure comprising one or more zinc oxide crystals , the method comprising:forming a patterned layer on previously deposited zinc oxide, wherein the patterned layer comprises one of a patterned template layer or a patterned mask layer;selective etching of the previously deposited zinc oxide if the patterned layer comprises the patterned mask layer; andselective depositing of zinc oxide by an aqueous solution type deposition if the patterned layer comprises the patterned template layer;wherein the selective etching or selective depositing to at least partially form one or more three dimensional geometric features to provide additional electrical-type and/or optical-type properties for the transparent conductive structure.24. The method of claim 23 , wherein the selective etching is substantially in accordance with a pattern of openings in the patterned mask layer exposing surface locations of the previously deposited zinc oxide.25. The method of claim 23 , wherein the selective depositing is substantially in accordance with a pattern of openings in the patterned template layer exposing surface locations of the previously deposited zinc oxide.26. The method of claim 23 , wherein the previously deposited zinc oxide is deposited by an aqueous solution type deposition.27. The method of claim 26 , wherein the deposition by an aqueous solution type deposition comprises seeding zinc oxide by nucleation followed by bulk deposition.28. The method of claim 23 , and further comprising:depositing more zinc oxide;forming another patterned layer on the more zinc oxide, wherein the another patterned layer comprises one of a patterned template layer or a patterned mask layer;selective etching of the more zinc oxide if the patterned layer comprises the patterned mask layer; ...

OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body. 112-. (canceled)13. An optoelectronic semiconductor component comprising:a light-emitting semiconductor body having a radiation side,a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, andan electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.14. The optoelectronic semiconductor component according to claim 13 , wherein the particles of the further material have a refractive index n3 claim 13 , which is different from a refractive index n1 of the transparent material.15. The optoelectronic semiconductor component according to claim 13 , wherein the refractive index n3 of the particles of the further material is higher than the refractive index n1 of the transparent material.16. The optoelectronic semiconductor component according to claim 13 , wherein the particles of the further material include TiO.17. The optoelectronic semiconductor component according to claim 13 , wherein the transparent material includes a transparent conductive oxide.18. The optoelectronic semiconductor component according to claim 13 , wherein the current expansion layer has an average refractive index n2 of equal to or higher than 2.19. The optoelectronic ...

ENHANCED LIGHT EXTRACTION

There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs. 1. A light emitting structure comprising:a light emitter capable of emitting electromagnetic radiation including in the visible spectrum;an integrated transparent electrically conductive layer located adjacent the light emitter through which the light may be transmitted;wherein the integrated transparent conductive layer is shaped in order to increase the amount of light capable of being extracted from the light emitting structure.2. A light emitting structure according to claim 1 , wherein the light emitting structure is a light emitting diode (LED) or a micro-LED.3. A light emitting structure according to claim 1 , wherein the light emitter is a quantum well region from which light is capable of being emitted; and wherein the quantum well region is about 0.05-0.2 microns thick or about 0.1 micron thick.4. (canceled)5. A light emitting structure according to claim 3 , wherein the quantum well region is made from InGaN/GaN; and wherein the light emitted from the light emitter has a wavelength of about 300-700 nm.6. (canceled)7. A light emitting structure according to claim 1 , wherein the integrated transparent conductive layer is in the form of a shaped cap which is formed with the rest of the light emitting structure during fabrication e.g. etching of the cap layer which has been deposited by electron beam evaporation or physical vapor deposition claim 1 , or a range of sputter deposition techniques or from a liquid phase technique or where the transparent conductive layer has been bonded under high pressure and temperature to the light emitting structure wherein optionally the cap has a dome shaped cross-section in one or two dimensions e.g. a round claim 1 , conical or sloped cross-section or ...

REFLECTIVE ELECTRODE STRUCTURE, LIGHT EMITTING DEVICE AND PACKAGE

The present invention describes a buried reflective electrode with vias and mesh current spreader isolated by a reflective stack of dielectric layers (BREVMIRS). The BREVMIRS includes a reflective stack of dielectric layers, a conducting mesh, a transparent conducting layer and a first electrode layer with vias going through the stack of reflective dielectric layers, the conducting mesh and the transparent conducting layer. There is at least one via going through the conductive reflective mesh and transparent conducting electrode. The BREVMIRS may be integrated into semiconductor light emitting diode devices to improve the device efficiency and light output power. 1. A buried reflective electrode structure for a light emitting device , comprising:a first electrode layer having at least one first type via extending from one surface thereof;a reflective stack of dielectric layer;a reflective mesh;a conducting mesh; anda transparent conducting layer;wherein the reflective stack of dielectric layer is positioned between the first electrode layer and the transparent conducting layer and electrically insulates the first electrode layer from the transparent conducting layer, and the reflective and conducting mesh is positioned adjacent to and electrically connected with the transparent conducting layer;the first type via penetrates through the reflective and conducting mesh, the transparent conducting layer, and the reflective stack of dielectric layer, and the first type via is electrically insulated from the reflective and conducting mesh and the transparent conducting layer.2. The buried reflective electrode structure of claim 1 , wherein the first electrode layer has a plurality of first type vias extending from one surface thereof claim 1 , the reflective stack of dielectric layer has a plurality of first type via holes claim 1 , the reflective and conducting mesh has a plurality of openings claim 1 , the transparent conducting layer has a plurality of holes; the ...

Light Emitting Diode

A light emitting diode including a substrate, a first type semiconductor layer, a luminous layer, a second type semiconductor layer, a first electrode, a transparent conductive layer, and a second electrode. The first type semiconductor layer is disposed on the substrate. The luminous layer is disposed on a portion of the first type semiconductor layer. The second type semiconductor layer is disposed on the luminous layer. The first electrode is disposed on a portion of the first type semiconductor layer not covered by the luminous layer. The transparent conductive layer disposed on the second type semiconductor layer has a plurality of through holes exposing the surface of the second type semiconductor layer. The second electrode is disposed on the transparent conductive layer. The distribution density D of the through holes near the second electrode is different from the distribution density D of the through holes near the first electrode. 1. A light emitting diode , comprising:a substrate;a first type semiconductor layer disposed on the substrate;a luminous layer disposed on a portion of the first type semiconductor layer;a second type semiconductor layer disposed on the luminous layer;a first electrode disposed on a portion of the first type semiconductor layer not covered by the luminous layer;a transparent conductive layer disposed on the second type semiconductor layer, wherein the transparent conductive layer has a plurality of through holes exposing the surface of the second type semiconductor layer; anda second electrode disposed on the transparent conductive layer,{'b': 1', '2, 'wherein vertical projections of the first electrode, the second electrode, and the through holes on the substrate shows a distribution density D of the through holes near the second electrode is different from a distribution density D of the through holes near the first electrode.'}212. The light emitting diode of claim 1 , wherein D larger than D.312. The light emitting diode of ...

Quantum Dot Light Enhancement Substrate And Lighting Device Including Same

A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer comprising a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material comprising quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein. 1. A component comprising a substrate comprising a material that is transparent to light within a predetermined range of wavelengths , a color conversion material comprising quantum dots disposed over a predetermined region of a surface of the substrate , and a conductive material disposed over at least a portion of the color conversion material , the conductive material being transparent to light within a second predetermined range of wavelengths , wherein the component further includes one or more outcoupling features disposed on a surface of the substrate opposite the color conversion material.2. A component in accordance with wherein the quantum dots comprise semiconductor nanocrystals.316-. (canceled)17. A component in accordance with wherein the substrate comprises a waveguide.18. A component in accordance with wherein the substrate is flexible.19. A component in accordance with wherein the substrate is rigid.20. A component in accordance with ...

ACTIVE MATRIX EMISSIVE MICRO LED DISPLAY

A display panel and a method of forming a display panel are described. The display panel may include a thin film transistor substrate including a pixel area and a non-pixel area. The pixel area includes an array of bank openings and an array of bottom electrodes within the array of bank openings. An array of micro LED devices are bonded to the corresponding array of bottom electrodes within the array of bank openings. An array of top electrode layers are formed electrically connecting the array of micro LED devices to a ground line in the non-pixel area. 1. A display panel comprising:a lower conductive layer including a ground line;a planarization layer over the lower metal layer;an opening in the planarization layer; an array of bottom electrodes; and', 'a ground contact within the opening in the planarization layer and in electrical contact with the ground line;, 'a patterned top conductive layer over the planarization layer, wherein the patterned top conductive layer includesa corresponding plurality of light emitting diodes (LEDs) bonded to the plurality of bottom electrodes; andone or more top electrode layers on and in electrical contact with the plurality of LEDs and the ground contact.2. The display panel of claim 1 , wherein each LED comprises an inorganic semiconductor-based p-n diode.3. The display panel of claim 2 , wherein each LED is a vertical LED with a maximum width of 1 μm-100 μm.4. The display panel of claim 3 , wherein each bottom electrode is independently addressable.5. The display panel of claim 4 , wherein each LED device has a maximum width of 1 μm-20 μm.6. The display panel of claim 3 , wherein the one or more top electrode layers includes a single top electrode layer on and in electrical contact with the plurality of LEDs and the ground contact.7. The display panel of claim 3 , wherein the one or more top electrode layers includes a plurality of top electrode layers.8. The display panel of claim 7 , wherein each top electrode layer spans ...

LIGHT-EMITTING ELEMENT

A light-emitting element includes a light-emitting stack which has an active layer, and a non-oxide insulative layer below the light-emitting stack, wherein a refractive index of the non-oxide insulative layer is less than 1.4.

PIXEL STRUCTURE, DISPLAY APPARATUS INCLUDING THE PIXEL STRUCTURE, AND METHOD OF MANUFACTURING THE PIXEL STRUCTURE

A pixel structure of a display apparatus includes an electrode line, at least one ultra small light-emitting diode, and a connection electrode. The electrode line includes a second electrode separated from a first electrode and at a same level as the first electrode on a base substrate. The at least one ultra small light-emitting diode is on the base substrate and has a length less than a distance between the first and second electrodes. A connection electrode includes a first contact electrode connecting the first electrode to the ultra small light-emitting diode and a second contact electrode connecting the second electrode to the ultra small light-emitting diode. 1. A pixel structure of a display apparatus , the pixel structure comprising:an electrode line including a second electrode separated from a first electrode and at a same level as the first electrode on a base substrate;at least one ultra small light-emitting diode on the base substrate and having a length less than a distance between the first and second electrodes; anda connection electrode including a first contact electrode connecting the first electrode to the ultra small light-emitting diode and a second contact electrode connecting the second electrode to the ultra small light-emitting diode.2. The pixel structure of a display apparatus as claimed in claim 1 , wherein the first and second contact electrodes are transparent electrodes.3. The pixel structure of a display apparatus as claimed in claim 1 , wherein a surface of at least one of the first or second electrodes facing the ultra small light-emitting diode is a reflection surface that reflects light to be emitted from the ultra small light-emitting diode.4. The pixel structure of a display apparatus as claimed in claim 3 , wherein each of the first and second electrodes has a thickness greater than a thickness of the ultra small light-emitting diode.5. The pixel structure of a display apparatus as claimed in claim 3 , wherein an angle of the ...

Oxides with Thin Metallic Layers as Transparent Ohmic Contacts for P-Type and N-Type Gallium Nitride

Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5 nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide. 1. An optoelectronic device , comprising:a transparent conductive layer in direct contact with a III-V semiconductor region on a substrate;wherein the transparent conductive layer comprises an oxide of a first metal and wherein the transparent conductive oxide further comprises a second metal.2. The device of claim 1 , wherein a work function of the transparent conductive layer matches a work function of the III-V semiconductor within±0.2 eV.3. The device of claim 1 , wherein the second metal comprises aluminum or titanium.4. The device of claim 1 , wherein the oxide of the first metal comprises indium tin oxide.5. The device of claim 4 , wherein the indium tin oxide comprises about 90 wt % indium oxide and about 10 wt % tin oxide.6. The device of claim 1 , wherein the oxide of the first metal comprises zinc oxide.7. The device of claim 6 , wherein the oxide comprises aluminum zinc oxide having 0.1-5 wt % aluminum or indium zinc oxide having 0.1-5 wt % indium.8. The device of claim 1 , wherein the oxide of the first metal further comprises an oxide of the second metal.9. The device of claim 1 , wherein the transparent conductive layer comprises a layer of the second metal in contact with a surface of the III-V semiconductor region.10. The device of claim 1 ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE

A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width. 1. A semiconductor light-emitting device comprising:an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the side surface and the first portion;wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion;wherein in a cross-sectional view the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.2. The semiconductor light-emitting device according to claim 1 , wherein the main light-extraction surface comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion claim 1 , and when the semiconductor light-emitting device is driven claim 1 , a near-field luminous intensity in the first light-extraction region is larger than a near-field luminous intensity in the second light-extraction region.3. The semiconductor light-emitting device according to claim 2 , wherein the main light-extraction surface ...