05-01-2017 дата публикации
Номер: US20170005230A1
Device successively including a substrate including a metal layer capable of reflecting a radiation; a first layer of a III/N type alloy, p-type doped, and including a first surface, opposite the metal layer, the first surface being provided with cavities; a light-emitting layer made of a III/N-type alloy, capable of generating the radiation; a second layer of a III/N-type alloy, n-type doped, having the radiation coming out therethrough; wherein a non-metallic filling material transparent in the spectral range is arranged within the cavities. 2. The device according to claim 1 , wherein the filling material forms a planar layer extending between the metal layer and the first surface of the first layer claim 1 , and the filling material is electrically conductive.3. The device according to claim 2 , wherein the filling material is an oxide claim 2 , preferably selected from the group comprising indium-tin oxide claim 2 , aluminum-doped zinc oxide ZnO claim 2 , indium-doped zinc oxide ZnO claim 2 , gallium-doped zinc oxide ZnO.4. The device according to claim 1 , wherein the filling material is flush with the first surface of the first layer claim 1 , and wherein the first surface of the first layer is in contact with the metal layer.5. The device according to claim 4 , wherein the filling material is selected from the group comprising titanium dioxide TiO claim 4 , silicon dioxide SiO claim 4 , zinc oxide ZnO claim 4 , aluminum-doped zinc oxide ZnO claim 4 , indium-doped zinc oxide ZnO claim 4 , gallium-doped zinc oxide ZnO claim 4 , silicon nitride SiN claim 4 , indium tin oxide.6. The device according to claim 1 , wherein the filling material forms dielectric balls claim 1 , and wherein the first surface of the first layer is in contact with the metal layer.7. The device according to claim 6 , wherein the filling material is selected from the group comprising titanium dioxide TiO claim 6 , silicon nitride SiN claim 6 , silicon dioxide SiO claim 6 , zinc oxide ZnO. ...
Подробнее