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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 3844. Отображено 100.
26-04-2012 дата публикации

Elastic wave device and method for manufacturing the same

Номер: US20120098387A1
Автор: Hajime Kando, Takashi Iwamoto
Принадлежит: Murata Manufacturing Co Ltd

An elastic wave device includes a piezoelectric thin film formed from a piezoelectric single crystal substrate by peeling, an inorganic layer formed on a rear surface of the piezoelectric thin film, an elastic layer disposed on a surface of the inorganic layer opposite to the piezoelectric thin film, and a support member adhered to a surface of the elastic layer opposite to the inorganic layer. The elastic layer reduces stress generated when the piezoelectric thin film provided with the inorganic layer and the support member are adhered to each other and has a predetermined elastic modulus. The inorganic layer is formed of a material having a higher elastic modulus than that of the elastic layer and prevents damping generated when the elastic layer is provided.

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Номер записи: 1
26-04-2012 дата публикации

Surface Acoustic Wave Filter and Duplexer Using Same

Номер: US20120098618A1
Автор: Hiroyuki Tanaka
Принадлежит: Kyocera Corp

An SAW filter and a duplexer excellent in electrical characteristics will be provided. An SAW filter has a piezoelectric substrate 40 , a surface acoustic wave element 10 having a first IDT electrode 1 on the piezoelectric substrate 40 , a first signal line 31 electrically connected to the first IDT electrode 1 , and a ring-shaped reference potential line 9 which has a first intersecting portion intersecting with the first signal line 31 through an insulation member 41 and surrounds the surface acoustic wave element 10.

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Номер записи: 2
24-05-2012 дата публикации

Composite substrate and method for manufacturing the same

Номер: US20120126669A1
Автор: Hiroki Kobayashi, Yasunori Iwasaki, Yuji Hori
Принадлежит: NGK Insulators Ltd

The composite substrate is a substrate used to manufacture an acoustic wave device, and includes a support substrate, a piezoelectric substrate, and a adhesive layer with which the support substrate and the piezoelectric substrate are bonded to each other. In the composite substrate, assuming that a surface of the piezoelectric substrate that is bonded to the support substrate is defined as a first surface and a surface at the side opposite to the first surface is defined as a second surface, the piezoelectric substrate is formed such that the first surface is inside the second surface when the first surface is projected onto the second surface in a direction perpendicular to the second surface. In other words, the composite substrate has an outer peripheral surface that is formed such that the circumference thereof increases toward the top surface of the piezoelectric substrate.

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Номер записи: 3
27-09-2012 дата публикации

Electronic component, electronic device, and method for manufacturing the electronic component

Номер: US20120241211A1
Автор: Kazuhiro Matsumoto, Kazunori Inoue, Tsutomu Miyashita
Принадлежит: TAIYO YUDEN CO LTD

An electronic component includes: a substrate; a functional portion provided on the substrate; an interconnection line provided on the substrate and electrically connected to the functional portion; a metal wall provided on the substrate so as to surround the functional portion and the interconnection line; and a seal portion that contacts the metal wall and covers the functional portion and the interconnection line so as to define a cavity above the functional portion, the seal portion being made of liquid polymer.

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Номер записи: 4
25-04-2013 дата публикации

Acoustic wave device and antenna duplexer employing the same

Номер: US20130099875A1
Автор: Hidehito Shimizu, Hiroyuki Nakamura, Takahiro Sato
Принадлежит: Panasonic Corp

The present invention is an acoustic wave device including first and second acoustic wave resonators. A first tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the first acoustic wave resonator extend and a direction along which the electrode fingers are arranged is different from a second tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the second acoustic wave resonator extend and a direction along which the electrode fingers are arranged.

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Номер записи: 5
23-05-2013 дата публикации

Filter and duplexer

Номер: US20130127566A1
Автор: Masafumi Iwaki, Shogo Inoue
Принадлежит: TAIYO YUDEN CO LTD

A filter includes: first series resonators and first parallel resonators that are connected in a ladder shape between an input terminal and an output terminal; a first inductor that is connected in parallel to at least one first series resonator; one or more second parallel resonators that are provided separately from the first parallel resonators, are connected between the input terminal and the output terminal, and have a resonance frequency and an anti-resonance frequency at frequencies lower than a passband formed by the first series resonators and the first parallel resonators; wherein an attenuation region is formed by a first attenuation pole formed by the at least one first series resonator and the first inductor and a second attenuation pole formed by a resonant response of the one or more second parallel resonators.

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Номер записи: 6
20-06-2013 дата публикации

Elastic wave branching filter

Номер: US20130154763A1
Автор: Yuichi Takamine
Принадлежит: Murata Manufacturing Co Ltd

An elastic wave surface acoustic wave duplexer includes an antenna terminal, a transmission filter, a reception filter, and a plurality of elastic wave resonators connected in series between the antenna terminal and the reception filter. The reception filter is a longitudinally coupled resonator-type surface acoustic wave filter including a plurality of IDT electrodes and arranged along a propagation direction of elastic wave. A combined capacitance of the plurality of surface acoustic wave resonators is smaller than a capacitance of the IDT electrodes and included in the plurality of IDT electrodes and connected to the antenna terminal.

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Номер записи: 7
27-06-2013 дата публикации

LADDER-TYPE SURFACE ACOUSTIC WAVE FILTER AND DUPLEXER INCLUDING THE SAME

Номер: US20130162368A1
Автор: FUJIWARA Joji, NAKAMURA Hiroyuki, Nakanishi Hidekazu, TSURUNARI Tetsuya
Принадлежит: Panasonic Corporation

A ladder-type surface acoustic wave filter includes a first series resonator having the lowest resonance frequency among a plurality of series resonators; and a second series resonator having a resonance frequency higher than the first series resonator. The film thickness of a dielectric film in the region where the first series resonator is formed is larger than that of a dielectric film in the region where the second series resonator is formed. 1. A ladder-type surface acoustic wave filter comprising:a substrate;an input terminal;an output terminal;a ground terminal;a plurality of series resonators formed on the substrate and connected between the input terminal and the output terminal;a parallel resonator formed on the substrate and connected between the series resonators and the ground terminal; anda dielectric film coupled to at least one of the plurality of series resonators and having an inverse temperature coefficient of frequency to that of the substrate, wherein:the plurality of series resonators include a first series resonator and a second series resonator, the first series resonator having a lowest resonance frequency among the plurality of series resonators,the dielectric film is formed in a region where the first series resonator is formed, andthe dielectric film is not formed in a region where the second series resonator is formed or if the dielectric film is formed in the region where the second series resonator is formed, a film thickness of the dielectric film in the region where the second series resonator is formed is smaller than a film thickness of the dielectric film in the region where the first series resonator is formed.2. The ladder-type surface acoustic wave filter according to claim 1 , wherein the dielectric film is made of silicon oxide.3. The ladder-type surface acoustic wave filter according to claim 1 , wherein an antiresonant frequency of the first series resonator is lower than an antiresonant frequency of the second series ...

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Номер записи: 8
05-09-2013 дата публикации

ATOMIC LAYER DEPOSITION ENCAPSULATION FOR ACOUSTIC WAVE DEVICES

Номер: US20130230643A1
Автор: Hatcher, JR. Merrill Albert, Rao Jayanti Jaganatha, Siomkos John Robert
Принадлежит: RF MICRO DEVICES, INC.

Acoustic wave devices and methods of coating a protective film of alumina (AlO) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device. 1. A method of forming a film of a plurality of monolayers on a surface of an acoustic wave device , comprising:providing the acoustic wave device within a reaction chamber; introducing a first precursor within the reaction chamber during a first time period to form one of the plurality of monolayers wherein the first precursor comprises a trimethyaluminum gas and the one of the plurality of monolayers comprises methyaluminoxane; and', 'introducing a second precursor within the reaction chamber during a second time period, the second precursor reacting with the methyaluminoxane so that the one of the plurality of monolayers comprises alumina and a surface that is hydroxilated., 'implementing a plurality of layer deposition cycles within the reaction chamber to form the plurality of monolayers of the film, wherein each of the plurality of layer deposition cycles, comprises2. The method of wherein after implementing the plurality of layer deposition cycles within the reaction chamber to form the film claim 1 , the film has a thickness greater than or equal to about 50 Angstroms but less than or equal to about 300 Angstroms.3. The method of further comprising hydroxilating the surface of the acoustic wave device prior to implementing the plurality of layer deposition cycles within the reaction chamber.4. The method of wherein implementing the plurality of layer deposition cycles within the reaction chamber to form the plurality of monolayers of the film comprises: introducing the first precursor within the reaction chamber during the ...

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Номер записи: 9
02-01-2014 дата публикации

ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREFOR

Номер: US20140003017A1
Автор: HIRA Mitsuyoshi, Kai Seiji, MUKAI Takao, NAKATANI Shintaro, Yamazaki Hisashi
Принадлежит: MURATA MANUFACTURING CO., LTD.

An electronic component includes a frame-shaped supporting body including a heat-curable resin and surrounding a functional unit on one main surface of a substrate and so as to be separated from a periphery of the substrate on an inner side and in which a lid member is fixed to the supporting body such that an opening of the frame-shaped supporting body is sealed. The frame-shaped supporting body includes a frame-shaped supporting body main body, a first protrusion that protrudes toward an inside from the supporting body main body and a second protrusion that protrudes toward an outside from the supporting body main body at a portion where the supporting body main body and the first protrusion are continuous with each other. 1. (canceled)2. An electronic component comprising:a substrate;a functional unit located on one main surface of the substrate;a frame-shaped supporting body including a heat-curable resin that is arranged on the one main surface of the substrate so as to surround the functional unit and so as to be separated from a periphery of the substrate on an inner side; anda lid member that is fixed to the supporting body so as to seal an opening of the supporting body; whereinthe frame-shaped supporting body includes a frame-shaped supporting body main body, a first protrusion that protrudes toward an inside from the supporting body main body and a second protrusion that is provided at a portion in which the supporting body main body and the first protrusion are continuous with each other so as to protrude toward an outside from the supporting body main body.3. The electronic component according to claim 2 , further comprising a penetrating electrode that is electrically connected to the functional unit and penetrates through the first protrusion and the lid member claim 2 , and an outer terminal that is connected to an upper portion of the penetrating electrode.4. The electronic component according to claim 3 , wherein the penetrating electrode includes ...

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Номер записи: 10
09-01-2014 дата публикации

DUPLEXER

Номер: US20140009247A1
Автор: Moriya Akira
Принадлежит:

A duplexer includes: a transmission filter connected between a common terminal and a transmission terminal; and a reception filter connected between the common terminal and a reception terminal, wherein the reception filter includes resonators located on a piezoelectric substrate, at least one resonator of the resonators is grounded, and a resonator located at a side closest to the common terminal out of the grounded resonator is a divided resonator that is divided into two or more, and a resonance frequency fr of the divided resonator is in a range of fr=2×(fto f)−(fto f) when a pass frequency of the transmission filter is fto fand a pass frequency of the reception filter is fto f. 1. A duplexer comprising:a transmission filter connected between a common terminal and a transmission terminal; anda reception filter connected between the common terminal and a reception terminal, whereinthe reception filter includes resonators located on a piezoelectric substrate,at least one resonator of the resonators is grounded, and a resonator located at a side closest to the common terminal out of the grounded resonator is a divided resonator that is divided into two or more, and{'sub': TL', 'TH', 'RL', 'RH', 'TL', 'TH', 'RL', 'RH, 'a resonance frequency fr of the divided resonator is in a range of fr=2×(fto f)−(fto f) when a pass frequency of the transmission filter is fto fand a pass frequency of the reception filter is fto f.'}2. The duplexer according to claim 1 , whereinthe divided resonator is serially divided.3. The duplexer according to claim 2 , whereinthe divided resonator is divided in a propagation direction of an acoustic wave.4. The duplexer according to claim 3 , whereinthe divided resonator includes pairs of IDTs (Interdigital Transducer) arranged in the propagation direction of the acoustic wave,adjoining electrode fingers located in adjoining IDTs out of the pairs of IDTs face in a same direction.5. The duplexer according to claim 2 , whereinthe divided ...

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Номер записи: 11
20-02-2014 дата публикации

Acoustic wave filter, duplexer, and module

Номер: US20140049340A1
Автор: Shogo Inoue
Принадлежит: TAIYO YUDEN CO LTD

An acoustic wave filter includes: at least a parallel resonator, wherein at least one of the parallel resonator includes a piezoelectric substance, an IDT located on the piezoelectric substance, and reflectors located on the piezoelectric substance so as to sandwich the IDT, and a distance between a first electrode finger that is an electrode finger closest to the reflector among electrode fingers of the IDT and a second electrode finger that is an electrode finger closest to the IDT among electrode fingers of the reflector is less than 0.25(λ IDT +λ ref ) where a period of the electrode fingers of the IDT is λ IDT and a period of the electrode fingers of the reflector is λ ref .

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Номер записи: 12
06-01-2022 дата публикации

FILTER ASSEMBLY WITH TWO TYPES OF ACOUSTIC WAVE RESONATORS

Номер: US20220006444A1
Автор: Ando Yoshiaki, NAKAMURA Hiroyuki, Saito Yasuyuki
Принадлежит:

Multiplexers are disclosed. A multiplexer can include a first filter and a second filter that are coupled to a common node. The second filter can include a first type of acoustic wave resonators (e.g., bulk acoustic wave resonators) and a series acoustic wave resonator of a second type (e.g., a surface acoustic wave resonator) that is coupled between the acoustic wave resonators of the first type and the common node. The first filter can provide a single-ended radio frequency signal. In certain embodiments, the first filter can be a receive filter and the second filter can be a transmit filter. 1. (canceled)2. A filter assembly comprising:a transmit filter having an output coupled to a common node, the transmit filter including a first stage serially connected with at least a second stage, the first stage including a first plurality of acoustic wave resonators of a first type, the second stage including a second plurality of acoustic wave resonators of a second type but not the first type, the second plurality of acoustic wave resonators having a higher suppression of a second harmonic of a radio frequency signal than the first plurality of acoustic wave resonators; anda receive filter having an input coupled to the common node, the receive filter configured to provide a single-ended radio frequency signal output.3. The filter assembly of wherein the first plurality of acoustic wave resonators of the first type are bulk acoustic wave resonators and the second plurality of acoustic wave resonators of the second type are surface acoustic wave resonators.4. The filter assembly of wherein the bulk acoustic wave resonators and the surface acoustic wave resonators are implemented on a common filter die.5. The filter assembly of wherein the filter assembly includes a first die that includes the first plurality of acoustic wave resonators of the first type and a second die that includes the second plurality of acoustic wave resonators of the second type.6. The filter ...

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Номер записи: 13
05-01-2017 дата публикации

ELASTIC WAVE FILTER DEVICE

Номер: US20170005638A1
Автор: IWAMOTO Hideki, KIDO Syunsuke, OTAGAWA Masanori
Принадлежит:

A SAW filter device defines a filter including a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode are stacked in this order. A comb capacitive electrode electrically coupled to the filter is provided on the piezoelectric film. Where λc is a wavelength determined by an electrode finger pitch of the comb capacitive electrode, and, among modes of an elastic wave generated by the comb capacitive electrode, Vis an acoustic velocity of a P+SV wave, Vis an acoustic velocity of a SH wave, and Vis an acoustic velocity of, out of higher-order modes of a SH wave, a higher-order mode at the lowest frequency side, Vf, or V/λf. 2. The elastic wave filter device according to claim 1 , wherein ψ of the Euler angles claim 1 , the Euler angles being a propagation orientation of an elastic wave generated by the comb capacitive electrode claim 1 , is within a range from about 86° to about 94° inclusive.3. The elastic wave filter device according to claim 2 , wherein V/λf.4. The elastic wave filter device according to claim 1 , wherein the high acoustic velocity member is a high acoustic velocity film claim 1 , and the elastic wave filter device further comprises a support substrate with an upper surface on which the high acoustic velocity film is stacked.5. The elastic wave filter device according to claim 1 , wherein the high acoustic velocity member is made of a high acoustic velocity substrate.6. The elastic wave filter device according to claim 1 , whereinthe comb capacitive electrode includes a pair of busbars facing each other;the IDT electrode includes a first IDT electrode ...

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Номер записи: 14
04-01-2018 дата публикации

INTEGRATED MODULE OF ACOUSTIC WAVE DEVICE WITH ACTIVE THERMAL COMPENSATION AND AN ACTIVE THERMAL COMPENSATING METHOD THEREOF

Номер: US20180006633A1
Автор: Chiang Chih-Feng, Chou Tung-Yao, Huang Fan Hsiu, Lin Cheng Kuo, Lin Re Ching, Tsai Shu Hsiao
Принадлежит:

An integrated module of acoustic wave device with active thermal compensation comprises a substrate, an acoustic wave filter, an active adjustment circuit and at least one variable capacitance device. The acoustic wave filter comprises a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. Each of the variable capacitance device is connected in parallel to one of the series and shunt acoustic wave resonators. The active adjustment circuit outputs an active thermal compensation signal correlated to a thermal variation sensed by the thermal sensing acoustic wave resonator to the variable capacitance device. The active thermal compensation signal induces a capacitance variation of the variable capacitance device such that the impact of the thermal variation to the acoustic wave device is compensated. 1. An integrated module of acoustic wave device with active thermal compensation comprising:a first substrate; a plurality of first acoustic wave resonators formed on said first substrate, wherein each of said plurality of first acoustic wave resonators is a series acoustic wave resonator of said first acoustic wave filter;', 'at least one second acoustic wave resonator formed on said first substrate, wherein each of said at least one second acoustic wave resonator is a shunt acoustic wave resonator of said first acoustic wave filter; and', 'a first thermal sensing acoustic wave resonator for sensing a first thermal variation;, 'a first acoustic wave filter, wherein said first acoustic wave filter comprisesa first active adjustment circuit, wherein said first thermal sensing acoustic wave resonator is connected to said first active adjustment circuit; andat least one first variable capacitance device, wherein each of said at least one first variable capacitance device is connected in parallel to one of said plurality of first acoustic wave ...

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Номер записи: 15
07-01-2021 дата публикации

Acoustic wave device, filter, and multiplexer

Номер: US20210006231A1
Автор: Hitoshi Tsukidate, Naoki Kakita
Принадлежит: TAIYO YUDEN CO LTD

An acoustic wave device includes: a piezoelectric substrate bonded on a support substrate, a surface including protruding portions and/or recessed portions being interposed between the piezoelectric substrate and the support substrate; a first acoustic wave resonator that includes first electrode fingers with a first average pitch and is disposed on the piezoelectric substrate in a first region where an average interval between the protruding portions and/or the recessed portions in a direction in which the first electrode fingers are arranged is a first interval; and a second acoustic wave resonator that includes second electrode fingers with a second average pitch different from the first average pitch, and is disposed on the piezoelectric substrate in a second region where an average interval between the protruding portions and/or the recessed portions in a direction in which the second electrode fingers are arranged is a second interval different from the first interval.

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Номер записи: 16
07-01-2021 дата публикации

ACOUSTIC WAVE FILTER, MULTIPLEXER, RADIO FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION DEVICE

Номер: US20210006232A1
Автор: NOSAKA Koji
Принадлежит: MURATA MANUFACTURING CO., LTD.

A filter includes: a series-arm resonator; and a parallel-arm resonator. The series-arm resonator and the parallel-arm resonator each include: an interdigital transducer (IDT) electrode formed on a substrate and including a plurality of electrode fingers; and a protective film. The protective film included in the parallel-arm resonator is thinner than the protective film included in the series-arm resonator. The parallel-arm resonator has a first fractional bandwidth ((the higher-order resonance frequency−the resonant frequency)/the resonant frequency) greater than the first fractional bandwidth of the series-arm resonator. The parallel-arm resonator has a second fractional bandwidth ((the higher-order antiresonant frequency−the antiresonant frequency)/the antiresonant frequency) greater than the second fractional bandwidth of the series-arm resonator. 1. An acoustic wave filter , comprising:a series-arm resonant circuit that includes a first acoustic wave resonator, the series-arm resonant circuit being disposed on a first path that conveys radio-frequency (RF) signals between a first input/output terminal and a second input/output terminal; anda parallel-arm resonant circuit that includes a second acoustic wave resonator, the parallel-arm resonant circuit being disposed on a second path that connects a node on the first path and a ground, an interdigital transducer (IDT) electrode formed on a substrate and including a plurality of electrode fingers, the substrate being at least partially piezoelectric; and', 'a protective film that covers the IDT electrode,, 'wherein the first acoustic wave resonator and the second acoustic wave resonator each includethe protective film in the second acoustic wave resonator being thinner than the protective film in the first acoustic wave resonator,the first acoustic wave resonator having a higher-order mode resonance frequency and a higher-order mode antiresonant frequency that are higher than an antiresonant frequency of the ...

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Номер записи: 17
03-01-2019 дата публикации

BONDED BODIES AND ACOUSTIC WAVE DEVICES

Номер: US20190007022A1
Автор: ASAI Keiichiro, Goto Masashi, TAI Tomoyoshi, UNO Yudai
Принадлежит:

An object is to improve insulation in a bonding layer and to improve a bonding strength of a supporting body and piezoelectric single crystal substrate, in a bonded body having the supporting body made of a polycrystalline material or single crystal material, the piezoelectric single crystal substrate and the bonding layer provided between the supporting body and piezoelectric single crystal substrate. 1. A bonded body comprising:a supporting body comprising a polycrystalline ceramic material or a single crystal material;a piezoelectric single crystal substrate; and{'sub': (1-x)', 'x, 'a bonding layer provided between said supporting body and said piezoelectric single crystal substrate, said bonding layer having a composition of SiO(0.008≤x≤0.408).'}2. The bonded body of claim 1 , wherein said bonding layer has an electrical resistivity of 4.9×10Ω·cm or higher.3. The bonded body of claim 1 , wherein a surface of said bonding layer and a surface of said piezoelectric single crystal substrate are bonded by direct bonding.4. The bonded body of claim 1 , wherein a surface of said supporting body and said bonding layer is bonded by direct bonding.5. The bonded body of claim 1 , wherein said supporting body comprises a material selected from the group consisting of silicon claim 1 , sapphire claim 1 , mullite claim 1 , cordierite claim 1 , translucent alumina and sialon.6. The bonded body of claim 1 , wherein said piezoelectric single crystal substrate comprises lithium niobate claim 1 , lithium tantalate or lithium niobate-lithium tantalate solid solution.7. An acoustic wave device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'said bonded body of ; and'}an electrode provided on said piezoelectric single crystal substrate. This is a continuation of International Application No. PCT/JP2018/011256, filed Mar. 22, 2018, which claims priority of Japanese Patent Application No. 2017-070219, filed Mar. 31, 2017, the entire contents of which are incorporated ...

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Номер записи: 18
03-01-2019 дата публикации

COMPOSITE FILTER DEVICE, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION DEVICE

Номер: US20190007030A1
Автор: SAJI Mari, YASUDA Junpei
Принадлежит:

A composite filter device includes an antenna common terminal, a first band pass filter having a first pass band, and a second band pass filter having a second pass band located at higher frequencies than the first pass band. The first band pass filter includes an elastic wave resonator. The elastic wave resonator includes a LiNbO3 substrate, an IDT electrode on the LiNbO3 substrate, and a dielectric film that covers the IDT electrode and includes a silicon oxide as a main component. When f1′ is the frequency of a Sezawa wave of the first band pass filter and f2 is the center frequency of the second pass band, f1′ is located at a different position from f2. 1. A composite filter device for use in carrier aggregation , the composite filter device comprising:an antenna common terminal that is connected to an antenna; anda plurality of band pass filters that are connected to the antenna common terminal and have different pass bands from each other; whereinthe plurality of band pass filters include:a first band pass filter that has a first pass band;a second band pass filter that is connected to the antenna common terminal and has a second pass band located at higher frequencies than the first band pass filter;the first band pass filter includes an elastic wave resonator;{'sub': 3', '3', '3, 'the elastic wave resonator includes a LiNbOsubstrate, an IDT electrode that is provided on the LiNbOsubstrate, and a dielectric film that covers the IDT electrode on the LiNbOsubstrate and includes a silicon oxide as a main component;'}{'sub': '3', 'the elastic wave resonator utilizes Rayleigh waves that propagate along the LiNbOsubstrate; and'}{'b': 1', '2', '1', '2, 'when f′ is a frequency of a Sezawa wave of the first band pass filter and f is a center frequency of the second pass band, f′ is located at a different position from f.'}31. The composite filter device according to claim 1 , wherein f′ is located outside the second pass band.41121. The composite filter device ...

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Номер записи: 19
02-01-2020 дата публикации

ACOUSTIC WAVE ELEMENT, ACOUSTIC WAVE FILTER DEVICE, AND MULTIPLEXER

Номер: US20200007110A1
Автор: DAIMON Katsuya, KONAKA Yohei
Принадлежит:

An acoustic wave element includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate, and a reflector. The IDT electrode includes plural electrode fingers, and the reflector includes plural reflector electrode fingers. An IDT-reflector gap that is a distance between a center of the electrode finger located closest to the reflector and a center of the reflector electrode finger located closest to the IDT electrode is not more than about 0.45 times an IDT wave length as a repetition pitch of the electrode fingers, and a reflector wave length that is twice a repetition pitch of the reflector electrode fingers is longer than the IDT wave length. 2. The acoustic wave element according to claim 1 , wherein the substrate includes:the piezoelectric layer on one main surface of which the IDT electrode is provided;a high acoustic velocity support substrate in which an acoustic velocity of a propagating bulk wave is higher than an acoustic velocity of an acoustic wave which propagates through the piezoelectric layer; anda low acoustic velocity film disposed between the high acoustic velocity support substrate and the piezoelectric layer, and in which an acoustic velocity of a propagating bulk wave is lower than the acoustic velocity of the acoustic wave which propagates through the piezoelectric layer.3. The acoustic wave element according to claim 1 , wherein a frequency of a spurious response that is generated due to the IDT-reflector gap which is not more than about 0.45 times the IDT wave length is lower than a resonant frequency of an acoustic wave resonator defined by the IDT electrode and the reflector.4. The acoustic wave element according to claim 1 , wherein in a case where the IDT wave length is set as λ claim 1 , the IDT-reflector gap is set as IRGAP claim 1 , and the reflector wave length is set as λ claim 1 , the IDT-reflector gap and the reflector wave length satisfy a relational expression:{'br': None, 'sub': IDT', 'REF', 'IDT, '1.003170 ...

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Номер записи: 20
11-01-2018 дата публикации

LADDER FILTER AND DUPLEXER

Номер: US20180013405A1
Автор: TAKATA Toshiaki
Принадлежит:

A ladder filter in which the pass band is defined by serial arm resonators and first and second parallel arm resonators includes the serial arm resonators, the first and second parallel arm resonators, and a third parallel arm resonator. The third parallel arm resonator is connected in parallel to the first parallel arm resonator, the electrostatic capacitance of the third parallel arm resonator is smaller than that of the first parallel arm resonator, and the anti-resonant frequency of the third parallel arm resonator is positioned outside the pass band of the ladder filter. The anti-resonant frequency of the first parallel arm resonator is positioned at the high frequency side of the anti-resonant frequencies of the second parallel arm resonators. 1. A ladder filter that has a certain pass band comprising:at least one serial arm resonator and first and second parallel arm resonators; whereina resonant frequency of the at least one serial arm resonator and anti-resonant frequencies of the first and second parallel arm resonators are positioned in the certain pass band;the anti-resonant frequency of the first parallel arm resonator is positioned at a high frequency side of the anti-resonant frequency of the second parallel arm resonator; andthe ladder filter further includes a third parallel arm resonator that is connected in parallel to the first parallel arm resonator, that has an electrostatic capacitance smaller than that of the first parallel arm resonator, and that has an anti-resonant frequency positioned outside the certain pass band.2. The ladder filter according to claim 1 , wherein the anti-resonant frequency of the first parallel arm resonator is positioned at a high frequency side of the resonant frequency of the at least one serial arm resonator directly connected to the first parallel arm resonator without any serial arm resonator interposed therebetween.3. The ladder filter according to claim 1 , whereinthe second parallel arm resonator includes a ...

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Номер записи: 21
10-01-2019 дата публикации

MULTIPLEXER

Номер: US20190013793A1
Автор: TAKAMINE Yuichi
Принадлежит:

A multiplexer includes a common connection terminal on a first surface of a substrate and to be connected to an antenna element, and transmission-side and reception-side elastic wave filters of Band25 and Band66 mounted on a second surface of the substrate opposite the first surface, that are connected to the common connection terminal, and that have pass bands different from each other. The transmission-side elastic wave filter of Band66 is located nearest on the substrate to the common connection terminal among the elastic wave filters. 1. A multiplexer that transmits and receives high-frequency signals via an antenna element , the multiplexer comprising:a substrate including a first surface and a second surface opposite the first surface;a common connection terminal that is disposed on the first surface of the substrate and that is to be connected to the antenna element; andat least three elastic wave filters that are mounted on the second surface of the substrate, that are connected to the common connection terminal, and that have pass bands different from each other; whereina first elastic wave filter of the at least three elastic wave filters, which generates a spurious wave at a frequency that is included in a pass band of a second elastic wave filter that is at least one of the elastic wave filters that differs from the first elastic wave filter among the at least three elastic wave filters, is located nearest on the substrate to the common connection terminal among the at least three elastic wave filters.2. The multiplexer according to claim 1 , wherein the second elastic wave filter is located nearer on the substrate to the common connection terminal than at least one elastic wave other than the first elastic wave filter and the second elastic wave filter among the at least three elastic wave filters.3. The multiplexer according to claim 1 , whereinthe substrate includes a plurality of layers; anda wiring line connecting the first elastic wave filter and ...

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Номер записи: 22
14-01-2021 дата публикации

SYSTEMS AND METHODS FOR SAW WAFER LEVEL ASSEMBLY WITH TOP SIDE CONTACTS

Номер: US20210013866A1
Автор: Iannotti Joseph Alfred, Kapusta Christopher James
Принадлежит:

A wafer level assembly is disclosed. The wafer level assembly includes a device wafer, and a plurality of electrodes disposed on the device wafer, wherein the device wafer the plurality of electrodes form a surface acoustic wave (SAW) device, a plurality of device pads disposed on the device wafer, wherein each of the plurality of electrodes are coupled to one of the device pads, a cap wafer coupled to the device wafer through a seal layer, the cap wafer having a plurality of contact pads and a plurality of interconnect pads integral with a surface of the cap wafer, wherein each of the plurality of contact pads is coupled to one of the plurality of interconnect pads, and a plurality of conductive interconnects, wherein each of the plurality of conductive interconnects is coupled between one of the plurality of device pads and one of the plurality of interconnect pads. 1. A device assembly comprising:a device wafer;a plurality of electrodes disposed on said device wafer, wherein said device wafer and said plurality of electrodes form a surface acoustic wave (SAW) device;a plurality of device pads disposed on said device wafer, wherein each of said plurality of electrodes are electrically coupled to at least one of said device pads;a cap wafer coupled to said device wafer through a seal layer, said cap wafer having a plurality of contact pads and a plurality of interconnect pads integral with a surface of said cap wafer, wherein each of said plurality of contact pads is electrically coupled to one of said plurality of interconnect pads; anda plurality of conductive interconnects, wherein each of said plurality of conductive interconnects is electrically coupled between one of said plurality of device pads and one of said plurality of interconnect pads.2. The device assembly of claim 1 , wherein each of said plurality of conductive interconnects comprises a wirebond.3. The device assembly of claim 1 , further comprising a coating covering at least a portion of said ...

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Номер записи: 23
09-01-2020 дата публикации

ELASTIC WAVE DEVICE, DUPLEXER, AND COMMUNICATION DEVICE

Номер: US20200014365A1
Автор: NAMBU Masaki, Tanaka Hiroyuki
Принадлежит:

A surface acoustic wave (SAW) device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode located on an upper surface of the piezoelectric substrate, a cover covering the upper surface of the piezoelectric substrate from above the IDT electrode, at least one first via conductor extending through at least part of the cover from the upper surface of the piezoelectric substrate to an upper surface of the cover, at least one second via conductor located, on the piezoelectric substrate, inward from the first via conductor in a plan view, extending through at least part of the cover from the upper surface of the piezoelectric substrate to the upper surface of the cover, and having a smaller diameter than the first via conductor, and a conductive layer located on the upper surface of the cover and extending over an upper end of the second via conductor. 1. An elastic wave device , comprising:a substrate comprising a piezoelectric substrate;at least one excitation electrode located on an upper surface of the piezoelectric substrate;a cover covering the upper surface of the substrate from above the at least one excitation electrode;at least one first via conductor extending through at least part of the cover from the upper surface of the substrate to an upper surface of the cover;at least one second via conductor located, on the substrate, inward from the at least one first via conductor in a plan view, the at least one second via conductor extending through at least part of the cover from the upper surface of the substrate to the upper surface of the cover, the at least one second via conductor having a smaller diameter than the at least one first via conductor; anda conductive layer located on the upper surface of the cover or in the cover, the conductive layer extending over an upper end of the at least one second via conductor.2. The elastic wave device according to claim 1 , whereinthe conductive layer is on the upper surface of the cover.3. ...

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Номер записи: 24
09-01-2020 дата публикации

FILTER DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20200014369A1
Автор: KAWASAKI Koichiro
Принадлежит:

A filter device includes a piezoelectric substrate, first and second functional elements provided on a surface of the piezoelectric substrate, a first conductive layer provided on the surface of the piezoelectric substrate, the first conductive layer connecting the first and second functional elements to each other, an insulating layer provided at least on the first conductive layer, a cover that faces the surface of the piezoelectric substrate, a support layer located between the surface of the piezoelectric substrate and the cover, the support layer defining hollow portions, in which the first and second functional elements are provided, between the piezoelectric substrate and the cover, and a first conductor that connects the insulating layer to the cover. 1. A filter device comprising:a piezoelectric substrate;first and second functional elements provided on a surface of the piezoelectric substrate;a first conductive layer provided on the surface of the piezoelectric substrate, the first conductive layer electrically connecting the first and second functional elements to each other;an insulating layer provided at least on the first conductive layer;a cover that faces the surface of the piezoelectric substrate;a support layer located between the surface of the piezoelectric substrate and the cover, the support layer defining hollow portions, in which the first and second functional elements are provided, between the piezoelectric substrate and the cover; anda first conductor that connects the insulating layer to the cover.2. The filter device according to claim 1 , whereinthe support layer is provided on the insulating layer; andthe first conductor is a first via conductor that extends through the cover and the support layer and that is in contact with the insulating layer.3. The filter device according to claim 2 , wherein the first via conductor overlaps the first conductive layer in plan view viewed in a thickness direction of the piezoelectric substrate.4. ...

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Номер записи: 25
18-01-2018 дата публикации

Saw-based electronic elements and filter devices

Номер: US20180019727A1
Автор: Hiroyuki Nakamura, Satoshi Niwa, Yoshiaki Ando
Принадлежит: Skyworks Filter Solutions Japan Co Ltd

Aspects and examples provide electronic elements and filter devices configured to prevent deterioration of the propagation characteristics caused by input and output signals being electromagnetically coupled to an electric conductor side wall. In one example an electronic filter includes an element substrate having a top surface, a bottom surface, a side surface, and piezoelectric body. A circuit including a plurality of SAW resonators is formed on the top surface of the element substrate. The electronic filter further includes a sealing substrate having a top surface and a bottom surface, and a side wall including an electric conductor and formed to define a cavity between the top surface of the element substrate and the bottom surface of the sealing substrate, the side wall enclosing a periphery of the circuit and being connected to a ground potential of the circuit.

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Номер записи: 26
18-01-2018 дата публикации

HIGH-FREQUENCY FILTER, FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS

Номер: US20180019731A1
Автор: TANI Masakazu, Tsukamoto Hideki
Принадлежит:

A high-frequency filter () includes resonators ( and ), an inductor (), and a switch (). The resonator () is connected between a first input/output terminal (P) and a second input/output terminal (P). One end of the inductor () is connected between the resonator () and the first input/output terminal (P). One end of the resonator () is connected to the other end of the inductor (). The switch () selects either a connection portion that connects the inductor () and the resonator () or the resonator () and connects either the connection portion or the resonator (), which has been selected, to a terminal of the resonator () on the side of the second input/output terminal (P). The switching between the connection modes of the switch () changes the circuit configuration of the high-frequency filter (). 1. A high-frequency filter comprising:a first resonator connected between a first input/output terminal and a second input/output terminal;a first reactance element having one end connected between the first resonator and the first input/output terminal;a second resonator having one end connected to another end of the first reactance element;a third resonator; anda switch configured to select either the third resonator or a connection portion connecting the first reactance element to the second resonator and connecting a selected one of the third resonator and the connection portion to a terminal of the first resonator on a side of the second input/output terminal.2. The high-frequency filter according to claim 1 , wherein the second resonator and the third resonator are connected to a ground.3. The high-frequency filter according to claim 1 , wherein the switch connects an unselected one of the third resonator and the connection portion to the ground.4. The high-frequency filter according to claim 1 , further comprising a second reactance element connected in parallel to the third resonator.5. The high-frequency filter according to claim 1 , further comprising:a fourth ...

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Номер записи: 27
22-01-2015 дата публикации

Ladder surface acoustic wave filter

Номер: US20150022283A1
Автор: Kazushi Watanabe
Принадлежит: Murata Manufacturing Co Ltd

A ladder surface acoustic wave filter includes a series arm connecting an input terminal and an output terminal, at least one parallel arm connecting the series arm and a ground terminal, at least one series arm resonator provided in the series arm, and at least two parallel arm resonators provided in at least one parallel arm and connected to each other in series. In the ladder surface acoustic wave filter, a connection point between at least the two parallel resonators connected to each other in series is grounded through an inductor.

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Номер записи: 28
16-01-2020 дата публикации

REFLECTIVE STRUCTURES FOR SURFACE ACOUSTIC WAVE DEVICES

Номер: US20200021266A1
Автор: Swamy Manjunath
Принадлежит:

Interdigital transducer (IDT) and reflective structure arrangements for surface acoustic wave (SAW) devices are disclosed. Representative SAW devices are described herein with reduced overall size while maintaining good quality factors. In certain embodiments, a SAW device may include an IDT arranged between reflective structures on a piezoelectric material. The reflective structures may include reflective IDTs that are configured to have a phase difference with the IDT to reflect and confine acoustic waves in the piezoelectric material. In certain embodiments, the reflective structures may be electrically connected to at least one of an input signal or an output signal. In this manner, the reflective structures may be configured with reduced size as compared to conventional reflective structures such as gratings, thereby providing a SAW device with reduced dimensions without a negative impact on device performance. 1. A surface acoustic wave (SAW) device , comprising:a piezoelectric material;an interdigital transducer (IDT) on the piezoelectric material and electrically connected to an input signal and an output signal; anda first reflective structure and a second reflective structure on the piezoelectric material, wherein the IDT is arranged between the first reflective structure and the second reflective structure;wherein the first reflective structure comprises a first reflective IDT and the second reflective structure comprises a second reflective IDT.2. The SAW device of claim 1 , wherein the first reflective IDT and the second reflective IDT comprise a phase difference with the IDT.3. The SAW device of claim 1 , wherein the first reflective IDT and the second reflective IDT are out of phase with the IDT.4. The SAW device of claim 1 , wherein the first reflective IDT and the second reflective IDT are electrically connected to the input signal and the output signal.5. The SAW device of claim 1 , wherein the first reflective IDT and the second reflective IDT are ...

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Номер записи: 29
16-01-2020 дата публикации

INTERDIGITAL TRANSDUCER ARRANGEMENTS FOR SURFACE ACOUSTIC WAVE DEVICES

Номер: US20200021267A1
Автор: Swamy Manjunath
Принадлежит:

Acoustic wave devices and interdigital transducer (IDT) arrangements for surface acoustic wave (SAW) devices are disclosed. Representative SAW devices are described herein that provide sharp transitions between passband frequencies and frequencies that are outside of desired passbands. A SAW device may include several IDTs arranged between reflective structures on a piezoelectric material and one or more additional IDTs or electrode pairs that are configured to modify the influence of parasitic capacitance, or other internal device capacitance, thereby improving steepness on the upper side of a passband as well as improving rejection for frequencies outside of the passband. The one or more additional IDTs or electrode pairs may be configured as at least one of a capacitor, an IDT capacitor, an IDT with a floating electrode, or combinations thereof. 1. A surface acoustic wave (SAW) device , comprising:a piezoelectric material;at least one input interdigital transducer (IDT) on the piezoelectric material and electrically connected to an input signal and ground;at least one output IDT on the piezoelectric material and electrically connected to an output signal and ground; andan additional IDT on the piezoelectric material and electrically connected to the input signal and the output signal, wherein the additional IDT is arranged between the at least one input IDT and the at least one output IDT.2. The SAW device of claim 1 , wherein the additional IDT comprises an IDT capacitor.3. The SAW device of claim 1 , wherein the additional IDT comprises a first electrode electrically connected to the input signal and a second electrode electrically connected to the output signal.4. The SAW device of claim 1 , further comprising a first reflective structure and a second reflective structure on the piezoelectric material claim 1 , wherein the at least one input IDT claim 1 , the at least one output IDT and the additional IDT are arranged between the first reflective structure and ...

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Номер записи: 30
21-01-2021 дата публикации

SURFACE ACOUSTIC WAVE DEVICE ON DEVICE ON COMPOSITE SUBSTRATE

Номер: US20210021255A1
Автор: Ballandras Sylvain, LAROCHE Thierry
Принадлежит:

A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange. 1. A surface acoustic wave device , comprising:a base substrate;a piezoelectric layer;an electrode layer in between the piezoelectric layer and the base substrate; anda comb electrode formed on the piezoelectric layer comprising a plurality of electrode fingers with a pitch ρ, defined as ρ=λ, with λ being a wavelength of a standing acoustic wave generated by applying opposite potentials to the electrode layer and the comb electrode,wherein, the piezoelectric layer comprises at least one region located in between the electrode fingers in which at least one physical parameter is different compared to the region underneath the plurality of electrode fingers.2. The surface acoustic wave device of claim 1 , wherein the at least one physical parameter of the piezoelectric layer being different in the at least one region is elasticity of the piezoelectric layer.3. The surface acoustic wave device of claim 1 , wherein the at least one physical parameter of the piezoelectric layer being different in the at least one region is a dopant concentration.4. The surface acoustic wave device of claim 1 , wherein a thickness tin the at ...

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Номер записи: 31
25-01-2018 дата публикации

FILTER, MULTIPLEXER, AND COMMUNICATION APPARATUS

Номер: US20180026605A1
Автор: Ito Motoki, URATA Tomonori
Принадлежит:

An input port, an output port, and a plurality of serial resonators and a plurality of parallel resonators connected in a ladder type between the input port and the output port and including IDT electrodes are provided. The plurality of parallel resonators include at least one first parallel resonator having a resonance frequency lower than resonance frequencies of the plurality of serial resonators, and at least one second parallel resonator having a resonance frequency higher than antiresonance frequencies of the plurality of serial resonators. 1. A filter comprising:an input port,an output port, anda plurality of serial resonators and a plurality of parallel resonators connected in a ladder type between the input port and the output port and comprising IDT electrodes, wherein at least one first parallel resonator having a resonance frequency lower than resonance frequencies of the plurality of serial resonators and', 'at least one second parallel resonator having a resonance frequency higher than antiresonance frequencies of the plurality of serial resonators., 'the plurality of parallel resonators comprises'}2. The filter according to claim 1 , wherein each of the at least one second parallel resonator comprises open type reflectors arranged on the two sides of the IDT electrode in a propagation direction of an acoustic wave and comprising pluralities of strips.3. The filter according to claim 1 , whereineach of the at least one first parallel resonator and the at least one second parallel resonator comprises reflectors arranged on the two sides of the IDT electrode in a propagation direction of an acoustic wave and comprising pluralities of strips, andthe number of strips of the reflector in the at least one second parallel resonator is smaller than the number of strips of the reflector in the at least one first parallel resonator.4. The filter according to claim 3 , wherein the reflector provided in the at least one second parallel resonator is open type.5. ...

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Номер записи: 32
25-01-2018 дата публикации

DUPLEXER

Номер: US20180026606A1
Автор: TAKATA Toshiaki
Принадлежит:

A duplexer includes elastic wave resonators disposed on a piezoelectric substrate to define a ladder elastic wave filter including shunt-arm resonators and series-arm resonators. The duplexer includes an inductance component connected between an antenna terminal and a ground potential. A transmitting filter includes the ladder elastic wave filter. The inductance component is disposed outside a short side of the piezoelectric substrate such that the electromagnetic coupling between the shunt-arm resonator located closest to a transmitting terminal in the ladder circuit configuration, and the inductance component is stronger than the electromagnetic coupling between the inductance component and the remaining shunt-arm resonators. 1. A duplexer comprising:an antenna terminal;a transmitting terminal;a receiving terminal;a transmitting filter connected between the antenna terminal and the transmitting terminal;a receiving filter connected between the antenna terminal and the receiving terminal; andan inductance component connected at one end to the antenna terminal, and connected at another end to a ground potential; whereinthe transmitting filter includes an elastic wave filter with a ladder circuit configuration, the elastic wave filter including a piezoelectric substrate, a series-arm resonator, and a plurality of shunt-arm resonators, the series-arm resonator including an elastic wave resonator provided on the piezoelectric substrate, the plurality of shunt-arm resonators each including an elastic wave resonator provided on the piezoelectric substrate;one of the plurality of shunt-arm resonators that is provided in a shunt arm located closest to the transmitting terminal in the ladder circuit configuration includes a transmitting-side shunt-arm resonator that is positioned closer to one side of the piezoelectric substrate than a remainder of the plurality of shunt-arm resonators, the one side extending in a direction parallel or substantially parallel to a direction ...

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Номер записи: 33
24-01-2019 дата публикации

MULTIPLEXER, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS

Номер: US20190028086A1
Автор: TAKAMINE Yuichi
Принадлежит:

A multiplexer includes a common terminal, a Band66 transmission-side filter, a Band30 transmission-side filter, and an inductance element. The Band66 transmission-side filter includes series arm resonators and parallel arm resonators. The frequency of spurious waves generated by the Band66 transmission-side filter is included in a pass band of the Band30 transmission-side filter. A transmission output terminal is connected to a common terminal with the inductance element interposed therebetween and is directly connected to one parallel arm resonator. The one parallel arm resonator has a largest capacitance, among the parallel arm resonators. 1. A multiplexer comprising:a common terminal;a first elastic wave filter and a second elastic wave filter having different pass bands; andan inductance element; wherein two input-output terminals;', 'one or more series arm resonators disposed in a path between the two input-output terminals; and', 'two or more parallel arm resonators disposed between the path and ground;, 'the first elastic wave filter includesa frequency of spurious waves generated by the first elastic wave filter is included in the pass band of the second elastic wave filter;the second elastic wave filter is directly connected to the common terminal;the input-output terminal at the common terminal side, among the two input-output terminals, is connected to the common terminal with the inductance element interposed therebetween and is directly connected to one parallel arm resonator, among the two or more parallel arm resonators; andthe one parallel arm resonator has a largest capacitance, among the two or more parallel arm resonators.2. The multiplexer according to claim 1 , wherein a piezoelectric film including one surface on which interdigital transducer electrodes of the one or more series arm resonators and the two or more parallel arm resonators are provided;', 'a high acoustic velocity support substrate in which an acoustic velocity of bulk waves ...

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Номер записи: 34
23-01-2020 дата публикации

COMMUNICATION MODULE

Номер: US20200028491A1
Автор: KUROYANAGI Takuma
Принадлежит: TAIYO YUDEN CO., LTD.

A communication module includes: a first substrate having a first surface; a second substrate having a second surface, the second surface facing the first surface across an air gap; a first filter located on the first surface, a passband of the first filter being either one of a transmit band and a receive band of a first band, the first band being a frequency division duplex band; and a second filter located on the second surface, at least a part of the second filter overlapping with at least a part of the first filter in a stacking direction in which the first substrate and the second substrate are stacked, a passband of the second filter being at least one of a transmit band and a receive band of a second band, the second band differing from the first band. 1. A communication module comprising:a first substrate having a first surface;a second substrate having a second surface, the second surface facing the first surface across an air gap;a first filter located on the first surface, a passband of the first filter being either one of a transmit band and a receive band of a first band, the first band being a frequency division duplex band; anda second filter located on the second surface, at least a part of the second filter overlapping with at least a part of the first filter in a stacking direction in which the first substrate and the second substrate are stacked, a passband of the second filter being at least one of a transmit band and a receive band of a second band, the second band differing from the first band.2. The communication module according to claim 1 , whereinthe first filter and the second filter are not used for communication at the same time.3. The communication module according to claim 1 , whereinat least a part of a ground terminal of the first filter and at least a part of a ground terminal of the second filter are electrically connected on at least one of the first surface and the second surface.4. The communication module according to claim 1 ...

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Номер записи: 35
28-01-2021 дата публикации

ELASTIC WAVE DEVICE, HIGH FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS

Номер: US20210028761A1
Автор: Mimura Masakazu
Принадлежит:

An elastic wave device includes an LiNbOsubstrate, a first elastic wave resonator including a first IDT electrode and a first dielectric film, and a second elastic wave resonator including a second IDT electrode and a second dielectric film. A Rayleigh wave travels along at least one surface of the elastic wave device. A thickness of the first dielectric film differs from a thickness of the second dielectric film. A propagation direction of an elastic wave in the first elastic wave resonator coincides with a propagation direction of an elastic wave in the second elastic wave resonator. Euler angles of the LiNbOsubstrate fall within a range of (0°±5°, θ, 0°±10°). 1. An elastic wave device comprising:{'sub': '3', 'an LiNbO(Lithium Niobate) substrate;'}{'sub': '3', 'a first elastic wave resonator including a first IDT (Interdigital Transducer) electrode provided on the LiNbOsubstrate and a first dielectric film provided to cover the first IDT electrode; and'}{'sub': '3', 'a second elastic wave resonator including a second IDT electrode provided on the LiNbOsubstrate and a second dielectric film provided to cover the second IDT electrode; wherein'}a thickness of the first dielectric film is different from a thickness of the second dielectric film;{'sub': '3', 'Euler angles (φ, θ, ψ) of the LiNbOsubstrate fall within a range of (0°±5°, θ, 0°±10°);'}the first IDT electrode includes a main electrode that is an electrode layer that occupies a largest mass in the first IDT electrode; and{'sub': 1', '1', '1', 'Pt', '1', 'Pt', '1', '3', '1', '1', '1, 'claim-text': {'br': None, 'i': T', '×r', 'T', '×r, 'sub': 1', '1', '1', '1, '−0.033/(−0.037)+29.99≤θ≤−0.050/(−043)+32.45\u2003\u2003(1).'}, 'in a case where a thickness of the main electrode of the first IDT electrode normalized by a wave length λthat is determined by an electrode finger pitch of the first IDT electrode is denoted as T, and a density ratio (ρ/ρ) of density of the main electrode of the first IDT electrode (ρ) to ...

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Номер записи: 36
28-01-2021 дата публикации

HIGH-FREQUENCY MODULE

Номер: US20210028767A1
Автор: SUGAYA Yukiteru
Принадлежит:

A high-frequency module includes a module substrate including an internal wiring pattern, and a SAW filter including a piezoelectric substrate, an electrode pattern on the piezoelectric substrate, a support surrounding the electrode pattern, and a cover on the support covering the electrode pattern to define a hollow space together with the support and the piezoelectric substrate. The module substrate, the cover, and the piezoelectric substrate are disposed in this order in a perpendicular or substantially perpendicular direction with respect to the module substrate, and a shield electrode is provided on a surface of the cover that faces the module substrate or on a surface of the cover that faces the piezoelectric substrate. 1. A high-frequency module comprising:a module substrate that includes an internal wiring pattern;a surface acoustic wave filter that is disposed on the module substrate; anda resin member that covers the surface acoustic wave filter; wherein a piezoelectric substrate;', 'an electrode pattern that is provided on the piezoelectric substrate;', 'a support that is provided on a surface of the piezoelectric substrate so as to surround the electrode pattern; and', 'a cover that is provided on the support and that covers the electrode pattern so as to define a hollow space together with the support and the piezoelectric substrate;, 'the surface acoustic wave filter includesthe module substrate, the cover, and the piezoelectric substrate are disposed in this order in a perpendicular or substantially perpendicular direction with respect to the module substrate; anda shield electrode that is grounded is provided in or on a surface of the cover that faces the module substrate or is provided in or on a surface of the cover that faces the piezoelectric substrate.2. The high-frequency module according to claim 1 , wherein the shield electrode overlaps at least a portion of the electrode pattern when the module substrate is viewed in plan view.3. The high- ...

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Номер записи: 37
02-02-2017 дата публикации

Electronic component and manufacturing method therefor

Номер: US20170033763A1
Автор: Mitsuyoshi Hira, Taku KIKUCHI
Принадлежит: Murata Manufacturing Co Ltd

An electronic component includes a functional electrode provided on a first substrate that has a rectangular or substantially rectangular plate shape and a support layer including resin that surrounds the functional electrode. A cover member closes an opening of the support layer. A via conductor penetrating the support layer is provided in at least one corner portion of the support layer. A resin reinforcing portion having the same height or substantially the same height as the support layer is provided in an outer side portion of the corner portion provided with the via conductor.

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Номер записи: 38
01-02-2018 дата публикации

ACOUSTIC WAVE RESONATOR

Номер: US20180034440A1
Автор: Gilbert Stephen Roy, RUBY Richard C.
Принадлежит:

An acoustic resonator structure includes an acoustic stack. The acoustic stack comprises: a substrate having a first surface and a second surface; a piezoelectric layer disposed over the substrate, the piezoelectric layer having a first surface, and a second surface. The first surface of the substrate, or the second surface of the piezoelectric layer, comprises a plurality of features; and a plurality of electrodes disposed over the first surface of the piezoelectric layer. The plurality of electrodes is configured to generate acoustic waves in the piezoelectric layer. The acoustic stack also includes a temperature compensation layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer. 1. A acoustic resonator structure , comprising:an acoustic stack, comprising: a substrate having a first surface and a second surface;a piezoelectric layer disposed over the substrate, the piezoelectric layer having a first surface, and a second surface, wherein the first surface of the substrate, or the second surface of the piezoelectric layer, comprises a plurality of features; a plurality of electrodes disposed over the first surface of the piezoelectric layer, the plurality of electrodes configured to generate surface acoustic waves in the piezoelectric layer; anda temperature compensation layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer, wherein a temperature coefficient of frequency (TCF) of the acoustic stack is less negative compared to an acoustic stack that does not comprise the temperature compensation layer.2. The acoustic resonator structure of claim 1 , wherein a temperature coefficient of frequency (TCF) of the acoustic stack is approximately zero (0.0) over a frequency range of Band 13.3. The acoustic resonator structure of claim 1 , wherein the temperature compensation layer comprises silicon dioxide.4. The acoustic resonator structure of claim 3 , wherein the ...

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Номер записи: 39
01-02-2018 дата публикации

MULTIPLEXER

Номер: US20180034443A1
Автор: Iwaki Masafumi, MATSUDA Takashi, NAKAZAWA Hidetaro
Принадлежит: TAIYO YUDEN CO., LTD.

A multiplexer includes: a first filter including a series resonator connected in series and a parallel resonator connected in parallel between a common terminal and a first terminal, each of the series resonator and the parallel resonator including an IDT located on a piezoelectric substrate, first and second regions being alternately located in an extension direction of electrode fingers, which excite an acoustic wave, within an overlap region of the IDT in which the electrode fingers overlap, a width of at least one of the electrode fingers in the second region being greater than that in the first region, one or some resonators of the parallel resonator and the series resonator having a larger number of the second regions than a remaining resonator; and a second filter connected between the common terminal and a second terminal and having a passband higher than a passband of the first filter. 1. A multiplexer comprising:a first filter including one or more series resonators connected in series between a common terminal and a first terminal and one or more parallel resonators connected in parallel between the common terminal and the first terminal, each of the one or more series resonators and the one or more parallel resonators including an IDT located on a piezoelectric substrate, a first region and a second region being alternately located in an extension direction of electrode fingers, which excite an acoustic wave, within an overlap region of the IDT, a width of at least one of the electrode fingers in the second region being greater than the width of the at least one of the electrode fingers in the first region, the electrode fingers overlapping in the overlap region, one or some resonators of the one or more parallel resonators and the one or more series resonators having a larger number of the second regions than a remaining resonator of the one or more parallel resonators and the one or more series resonators; anda second filter connected between the ...

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Номер записи: 40
31-01-2019 дата публикации

ACOUSTIC WAVE RESONATOR, ACOUSTIC WAVE FILTER, MULTIPLEXER, AND COMMUNICATION APPARATUS

Номер: US20190036554A1
Автор: Ito Motoki, KISHINO Tetsuya, Nakai Tsuyoshi
Принадлежит:

An SAW resonator includes a piezoelectric substrate, an IDT electrode, and a pair of reflectors. The IDT electrode includes pluralities of electrode fingers which are aligned on the piezoelectric substrate in a direction of propagation of a SAW. The pair of reflectors are located on the two sides of the pluralities of electrode fingers on the piezoelectric substrate in the direction of propagation. The IDT electrode includes a plurality of areas which includes pluralities of electrode fingers distributed to them and have different resonance frequencies from each other. The plurality of areas include at least three areas. The second highest resonance frequency among all areas is lower than an intermediate value between the lowest resonance frequency among all areas and the highest resonance frequency among all areas. 1. An acoustic wave resonator , comprising:a piezoelectric substrate,an IDT electrode comprising pluralities of electrode fingers aligned in a direction of propagation of an acoustic wave on the piezoelectric substrate, anda pair of reflectors on the two sides of the pluralities of electrode fingers on the piezoelectric substrate in the direction of propagation, whereinthe IDT electrode comprises a plurality of areas, a plurality of electrode fingers among the pluralities of electrode fingers being distributed to each of the areas, the areas having resonance frequencies different from each other,the plurality of areas comprise at least an area having the lowest resonance frequency among all areas, an area having the highest resonance frequency among all of the areas, and an area having a resonance frequency which is higher than the lowest resonance frequency and is second highest among all of the areas, andthe second highest resonance frequency is lower than an intermediate value between the lowest resonance frequency and the highest resonance frequency.2. The acoustic wave resonator according to claim 1 , wherein:in each of the plurality of areas, the ...

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Номер записи: 41
30-01-2020 дата публикации

ACOUSTIC WAVE FILTER DEVICE, DUPLEXER, RADIO FREQUENCY FRONT END CIRCUIT AND COMMUNICATION APPARATUS

Номер: US20200036365A1
Автор: NOSAKA Koji
Принадлежит:

The acoustic wave filter (A) includes a parallel-arm resonant circuit (). The parallel-arm resonant circuit () includes a parallel-arm resonator (p) and a frequency variable circuit () that are connected in parallel. The frequency variable circuit () includes a parallel-arm resonator (p) that has a resonant frequency higher than that of the parallel-arm resonator (p) and a switch (SW) element. A frequency difference between a resonant frequency on a higher frequency side of the parallel-arm resonant circuit () in a case where the switch (SW) is OFF and a resonant frequency on a higher frequency side of the parallel-arm resonant circuit () in a case where the switch (SW) is ON is equal to or more than a frequency difference between a low frequency end frequency of the second attenuation band and a low frequency end frequency of the first attenuation band. 1. An acoustic wave filter device that switches between first filter characteristics that transmit a radio frequency signal in a first pass band and attenuate a radio frequency signal in a first attenuation band allocated to a higher frequency side than the first pass band and second filter characteristics that transmit a radio frequency signal in a second pass band that is allocated to a higher frequency side than the first pass band and attenuate a radio frequency signal in a second attenuation band allocated to a higher frequency side than the second pass band , the acoustic wave filter device comprising:a series-arm circuit that is connected between a first input/output terminal and a second input/output terminal; anda parallel-arm resonant circuit that is connected to a node on a path connecting the first input/output terminal to the second input/output terminal and a ground, a first acoustic wave resonator, and', 'a frequency variable circuit that is connected in parallel with the first acoustic wave resonator, the frequency variable circuit varying a resonant frequency and an anti-resonant frequency of the ...

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Номер записи: 42
08-02-2018 дата публикации

SAW FILTER DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20180041191A1
Автор: Park Jang Ho
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A surface acoustic wave (SAW) filter device includes: a first layer disposed on a substrate; an inter-digital transducer (IDT) electrode layer disposed on the first layer; a second layer covering the IDT electrode layer and the first layer; and an overlay layer covering the second layer, wherein the first layer includes any one or any combination of any two or more of a metal layer, a metal oxide layer, and an oxide layer. 1. A surface acoustic wave (SAW) filter device , comprising:a first layer disposed on a substrate;an inter-digital transducer (IDT) electrode layer disposed on the first layer;a second layer covering the IDT electrode layer and the first layer; andan overlay layer covering the second layer,wherein the first layer comprises any one or any combination of any two or more of a metal layer, a metal oxide layer, and an oxide layer.2. The SAW filter device of claim 1 , wherein the first layer comprises the metal layer claim 1 , and the metal layer comprisesany one or any combination of any two or more of titanium (Ti), chromium (Cr), and aluminum (Al), oran alloy layer comprising titanium (Ti), chromium (Cr), and aluminum (Al).3. The SAW filter device of claim 2 , wherein the first layer further comprises a metal oxide layer comprising any one or any combination of any two or more of titanium oxide (TiO) claim 2 , chromium oxide (CrO) claim 2 , and aluminum oxide (AlO).4. The SAW filter device of claim 3 , wherein the metal layer is disposed under the IDT electrode layer.5. The SAW filter device of claim 1 , wherein the second layer comprises a metal oxide layer comprising any one or any combination of any two or more of titanium oxide (TiO) claim 1 , chromium oxide (CrO) claim 1 , and aluminum oxide (AlO).6. The SAW filter device of claim 5 , wherein a material of the first layer is the same as a material of the second layer.7. The SAW filter device of claim 5 , wherein the second layer comprises a thickness in a range of 3 nm to 20 nm.8. The SAW filter ...

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Номер записи: 43
08-02-2018 дата публикации

ACOUSTIC FILTERING CIRCUITRY INCLUDING CAPACITOR

Номер: US20180041193A1
Автор: Abbott Benjamin P., Briot Jean, Chen Alan S., Kook Taeho, Shive Scott, Steiner Kurt G.
Принадлежит:

Acoustic filtering circuitry includes a piezoelectric layer, a dielectric layer, a plurality of acoustic resonators, and a capacitor. The dielectric layer is over a surface of the piezoelectric layer. The plurality of acoustic resonators each includes a transducer on the surface of the piezoelectric layer such that the transducer is between the piezoelectric layer and the dielectric layer. The capacitor includes a first plate on the surface of the piezoelectric layer such that the first plate is between the piezoelectric layer and the dielectric layer and a second plate over the first plate such that the second plate and the first plate are separated by at least a portion of the dielectric layer. 1. Acoustic filtering circuitry comprising:a piezoelectric layer;a dielectric layer over a surface of the piezoelectric layer;a plurality of acoustic resonators each comprising a transducer on the surface of the piezoelectric layer such that the transducer is between a portion of the piezoelectric layer and the dielectric layer; and a first plate on the surface of the piezoelectric layer such that the first plate is between a portion of the piezoelectric layer and the dielectric layer; and', 'a second plate over the first plate such that the second plate and the first plate are separated by at least a portion of the dielectric layer., 'a capacitor comprising2. The acoustic filtering circuitry of wherein:the piezoelectric layer comprises one of lithium niobate and lithium tantalate;the dielectric layer comprises silicon oxide;the first plate comprises multiple metal layers; andthe second plate comprises titanium.3. The acoustic filtering circuitry of further comprising a plurality of metal traces over the surface of the dielectric layer such that the plurality of metal traces electrically couple the plurality of acoustic resonators and the capacitor between an input node and an output node to provide a desired filter response.4. The acoustic filtering circuitry of wherein ...

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Номер записи: 44
08-02-2018 дата публикации

Multiplexer

Номер: US20180041194A1
Автор: Masato Ito, Ryo Miyamoto, Yuki Endo
Принадлежит: TAIYO YUDEN CO LTD

A multiplexer includes: a first filter that includes a piezoelectric thin film resonator and is connected between a common terminal and a first terminal, the piezoelectric thin film resonator being located on a substrate; a second filter that includes an acoustic wave resonator and is connected between the common terminal and a second terminal, the acoustic wave resonator including an IDT located on a piezoelectric substrate; and a capacitor that includes a pair of electrodes facing each other in a planar direction and is coupled to the first filter, the pair of electrodes being located on the piezoelectric substrate.

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Номер записи: 45
07-02-2019 дата публикации

COMPOSITE FILTER DEVICE, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS

Номер: US20190044496A1
Автор: TAKAMINE Yuichi
Принадлежит:

A composite filter device includes a common terminal disposed on an element substrate including a piezoelectric layer, first and second band pass filters disposed on the element substrate, and connected at one end thereof to the common terminal, a shield electrode interposed between a signal line and the first band pass filter, the signal line being disposed on the element substrate and connecting the common terminal to the first and second band pass filters, and an inductor connected between the shield electrode and a reference potential line. 1. A composite filter device comprising:an element substrate including a piezoelectric layer;a common terminal disposed on the element substrate;a first band pass filter connected at one end thereof to the common terminal, disposed on the element substrate, and including an acoustic wave resonator;a second band pass filter connected at one end thereof to the common terminal, disposed on the element substrate, and including an acoustic wave resonator;a signal line disposed on the element substrate and connecting the one end of each of the first and second band pass filters to the common terminal;a reference potential line disposed on the element substrate and connected to the second band pass filter;a shield electrode disposed on the element substrate, interposed between the signal line and the first band pass filter, and electrically connected to the reference potential line; andan inductor electrically connected between the shield electrode and the reference potential line.2. The composite filter device according to claim 1 , wherein the signal line is opposite to the second band pass filter claim 1 , with the first band pass filter interposed therebetween.3. The composite filter device according to claim 1 , wherein the first band pass filter includes a plurality of acoustic wave resonators.4. The composite filter device according to claim 3 , wherein the plurality of acoustic wave resonators include series arm resonators ...

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Номер записи: 46
07-02-2019 дата публикации

ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20190044498A1
Автор: KAWASAKI Kentaro
Принадлежит:

An elastic wave device includes a piezoelectric substrate, first to third IDT electrodes provided on the piezoelectric substrate, a dielectric film provided on the piezoelectric substrate and covering the first to third IDT electrodes, the thickness of the dielectric film in a first region in which the dielectric film covers the first IDT electrodes is different from the thickness of the dielectric film in a second region in which the dielectric film covers the second IDT electrodes and the thickness of the dielectric film in a third region in which the dielectric film covers the third IDT electrodes. The density equivalent thickness of each of the first IDT electrodes and the second IDT electrodes are equal to each other, and the density equivalent thickness of each of the third IDT electrodes is different from the density equivalent thickness of each of the first IDT electrodes and the second IDT electrodes. 1. An elastic wave device comprising:a piezoelectric substrate;first, second, and third IDT electrodes that are provided on the piezoelectric substrate; anda dielectric film that is provided on the piezoelectric substrate such that the dielectric film covers the first, second, and third IDT electrodes, and such that a thickness of the dielectric film in a region in which the dielectric film covers the first IDT electrode is different from a thickness of the dielectric film in a region in which the dielectric film covers the second IDT electrode and a thickness of the dielectric film in a region in which the dielectric film covers the third IDT electrode; whereinfirst, second, and third elastic wave elements that include the first, second, and third IDT electrodes and the dielectric film are provided; andwhen a thickness is converted into a density equivalent thickness on an assumption that materials of the first, second, and third IDT electrodes have a same or substantially a same density, the density equivalent thicknesses of the first and second IDT ...

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Номер записи: 47
07-02-2019 дата публикации

FRONT END MODULE FOR CARRIER AGGREGATION OPERATION

Номер: US20190044548A1
Автор: FREISLEBEN Stephan
Принадлежит:

For improved band separation in a front-end module, it is proposed to extract an extractor band using an extractor arrangement comprising a notch filter and an extractor path including bandpass filters. The front-end module further has a diplexer that separates a first and a second frequency range with a diplexer spacing. The extractor band lies between the two frequency ranges such that it does not overlap with any of the two frequency ranges. In this way, the distance between the two frequency ranges is increased beyond the actual diplexer spacing. 1. Front-end module that is equipped for carrier aggregation mode ,{'b': '1', 'with a first signal path (SP) that connects a first antenna connection (AT) to a first diplexer (DPX) or a higher multiplexer,'}with a notch filter (NF) that is connected to the diplexer and has a first stopband,with a first extractor path (EP) that can be connected at a node arranged in the signal path between the antenna connection and the first notch filter,with a bandpass filter (BP) for a first extractor band, which is arranged in the first extractor path (EP), wherein the notch filter and the bandpass filter form an extractor arrangement (EA),{'b': 1', '2, 'wherein the diplexer separates a first and a second frequency range, which are separated by a first diplexer spacing, and respectively assigns them to a first partial path (TP) or a second partial path (TP),'}wherein the stopband of the notch filter and the first extractor band overlap at least partially,wherein the stopband is arranged between the first and second frequency ranges such that it does not overlap with any of the frequency ranges.2. Front-end module according to claim 1 ,{'b': 2', '3, 'in which a second diplexer (DPX) or a higher multiplexer that separates at least a third frequency range from the first signal path and feeds it into a third partial path (TP) is arranged in the first signal path (SP) between the first antenna connection (AT) and the notch filter (NF).'}3 ...

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Номер записи: 48
06-02-2020 дата публикации

METHOD FOR ADJUSTING THE STRESS STATE OF A PIEZOELECTRIC FILM AND ACOUSTIC WAVE DEVICE EMPLOYING SUCH A FILM

Номер: US20200044140A1
Автор: Bethoux Jean-Marc, Radisson Damien, Sinquin Yann
Принадлежит:

A method for adjusting the stress state of a piezoelectric film having a first stress state at room temperature includes a step of forming an assembly including a carrier having a thermal expansion coefficient, a compliant layer placed on the carrier, and the piezoelectric film placed on the compliant layer, the piezoelectric film having a thermal expansion coefficient different from that of the carrier. The method also includes a step of heat treating the assembly, in which the assembly is heated to a treatment temperature above the glass transition temperature of the compliant layer. The present disclosure also relates to a process for fabricating an acoustic wave device comprising the piezoelectric layer the stress state of which was adjusted as described herein. 117-. (canceled)18. A method for adjusting the stress state of a piezoelectric film , having a first stress state at room temperature , the method comprising: a support having a coefficient of thermal expansion;', 'a creep layer arranged on the support, the creep layer having a glass transition temperature (Tg) higher than ambient temperature; and', 'the piezoelectric film arranged on the creep layer, the piezoelectric film having a different thermal expansion coefficient than that of the support; and, 'forming an assembly comprising a first heat treatment phase bringing the assembly to a treatment temperature higher than the glass transition temperature (Tg) of the creep layer so as to release at least part of stress of the piezoelectric film generated by the difference in thermal expansion between the support and the piezoelectric film and so as to place the piezoelectric film in a second stress state; and', 'a second heat treatment phase, subsequent to the first heat treatment phase, bringing the assembly to room temperature so as to modify the second stress state of the piezoelectric film by the difference in thermal contraction between the support and the piezoelectric film and place the ...

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Номер записи: 49
18-02-2021 дата публикации

ELASTIC WAVE DEVICE WITH SUB-WAVELENGTH THICK PIEZOELECTRIC LAYER AND HIGH VELOCITY LAYER

Номер: US20210050840A1
Автор: GOTO Rei, Lam Chun Sing, NAKAMURA Hiroyuki, Zou Jie
Принадлежит:

Aspects of this disclosure relate to an elastic wave device. The elastic wave device includes a sub-wavelength thick piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a high velocity layer configured to inhibit an elastic wave from leaking from the piezoelectric layer at anti-resonance. 1. (canceled)2. An elastic wave device comprising:a piezoelectric layer having a cut angle in a cut angle range from −10° to 30°;an interdigital transducer electrode on the piezoelectric layer; anda high velocity layer in physical contact with the piezoelectric layer, the high velocity layer having a higher bulk velocity than a velocity of the elastic wave, the elastic wave device configured to generate an elastic wave having a wavelength of λ, and the piezoelectric layer having a thickness in a thickness range from 0.35λ to 0.8λ.3. The elastic wave device of wherein the piezoelectric layer includes a lithium niobate layer.4. The elastic wave device of wherein the piezoelectric layer includes a lithium tantalate layer.5. The elastic wave device of wherein the high velocity layer is a silicon layer.6. The elastic wave device of wherein the cut angle is in a range from 20° to 30°.7. The elastic wave device of wherein the high velocity layer is configured to inhibit the elastic wave from leaking from the piezoelectric layer at anti-resonance claim 2 , the elastic wave device being included in a ladder filter.8. The elastic wave device of further comprising a temperature compensating layer having a positive temperature coefficient of frequency claim 2 , the interdigital transducer electrode being disposed between the temperature compensating layer and the piezoelectric layer claim 2 , and the elastic wave being a surface acoustic wave.905. The elastic wave device of wherein the temperature compensating layer has a thickness of less than .A.10. An elastic wave device comprising:a lithium niobate layer having a cut angle in a cut angle range from −10 ...

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Номер записи: 50
18-02-2021 дата публикации

ACOUSTIC WAVE RESONATOR WITH ROTATED AND TILTED INTERDIGITAL TRANSDUCER ELECTRODE

Номер: US20210050842A1
Автор: GOTO Rei, Tang Gong Bin
Принадлежит:

Acoustic wave resonators are disclosed that include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a rotation angle and a tilt angle. The rotation angle and the tilt angle can together increase a figure of merit of the acoustic wave device. The rotation angle and the tilt angle can both be non-zero. 1. An acoustic wave resonator with increased figure of merit , the acoustic wave resonator comprising:a piezoelectric layer; andan interdigital transducer electrode over the piezoelectric layer, the interdigital transducer electrode having a rotation angle and a tilt angle, the rotation angle and the tilt angle both being non-zero, and the rotation angle and the tilt angle together configured to cause an increase in a figure of merit of the acoustic wave resonator relative to a configuration having a zero rotation angle and a zero tilt angle.2. The acoustic wave resonator of wherein a sum of the rotation angle and the tilt angle is in a range from 2° to 14°.3. The acoustic wave resonator of wherein a magnitude of the rotation angle is greater than 1°.4. The acoustic wave resonator of wherein the rotation angle is in a range from 1° to 45°.5. The acoustic wave resonator of wherein the rotation angle is greater than the tilt angle.6. The acoustic wave resonator of wherein a magnitude of the rotation angle is greater than 1°.7. The acoustic wave resonator of wherein the rotation angle is no greater than 15°.8. The acoustic wave resonator of wherein the tilt angle is at least 6°.9. The acoustic wave resonator of wherein the figure of merit of acoustic wave resonator is above 140.10. The acoustic wave resonator of further comprising a support substrate claim 1 , the piezoelectric layer positioned between the support substrate and the interdigital transducer electrode.11. The acoustic wave resonator of further comprising a low velocity layer positioned between the support substrate and the ...

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Номер записи: 51
18-02-2021 дата публикации

MULTIPLEXER

Номер: US20210050844A1
Автор: ISAKA Fumiaki
Принадлежит: TAIYO YUDEN CO., LTD.

A multiplexer includes: first and second substrates overlapping with each other with an air gap interposed therebetween; a first filter disposed on the first substrate and including first series resonators connected in series with a first path, and first parallel resonators; and a second filter disposed on the second substrate and including second series resonators connected in series with a second path, and second parallel resonators connected between the second path and a ground, each of the second series resonators and the second parallel resonators including a piezoelectric film, a first electrode interposed between the piezoelectric film and the second substrate, a second electrode interposed between the piezoelectric film and the air gap, and a resonance region, in at least one second parallel resonator, the first electrode being coupled to the second path, the second electrode being coupled to the ground, the resonance region overlapping with the first path. 1. A multiplexer comprising:a first substrate having a first surface;a second substrate having a second surface that overlaps with the first surface with an air gap interposed between the first surface and the second surface in a plan view;a first filter disposed on the first surface, the first filter including one or more first series resonators connected in series with a first series path from a common terminal to a first terminal, and one or more first parallel resonators each having a first end coupled to the first series path and a second end coupled to a ground; anda second filter disposed on the second surface, the second filter including one or more second series resonators connected in series with a second series path from the common terminal to a second terminal, and one or more second parallel resonators each having a first end coupled to the second series path and a second end coupled to a ground,each of the one or more second series resonators and the one or more second parallel resonators ...

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Номер записи: 52
18-02-2016 дата публикации

ACOUSTIC WAVE ELEMENT, DUPLEXER, AND COMMUNICATION MODULE

Номер: US20160049920A1
Автор: KISHINO Tetsuya
Принадлежит:

An acoustic wave element of the present disclosures has a piezoelectric substrate and an acoustic wave resonator S on a main surface of the piezoelectric substrate. The acoustic wave resonator S is one being divided into a first IDT electrode and a second IDT electrode which are electrically connected to the first IDT electrode. The first IDT electrode includes a first comb-shaped electrode on the signal input side and a second comb-shaped electrode on the signal output side. The second IDT electrode includes a third comb-shaped electrode on the signal input side and a fourth comb-shaped electrode on the signal output side. The direction of arrangement of the third comb-shaped electrode and the fourth comb-shaped electrode from the third comb-shaped electrode toward the fourth comb-shaped electrode is different from the direction of arrangement from the first comb-shaped electrode toward the second comb-shaped electrode. 1. An acoustic wave element , comprising:a piezoelectric substrate; andan acoustic wave resonator on a main surface of the piezoelectric substrate, whereinthe acoustic wave resonator is being divided into a first IDT electrode and a second IDT electrode which is electrically connected to the first IDT electrode,the first IDT electrode comprises a first comb-shaped electrode on a signal input side and a second comb-shaped electrode on a signal output side,the second IDT electrode comprises a third comb-shaped electrode on a signal input side and a fourth comb-shaped electrode on a signal output side, anda direction of arrangement from the third comb-shaped electrode toward the fourth comb-shaped electrode is different from a direction of arrangement from the first comb-shaped electrode toward the second comb-shaped electrode.2. The acoustic wave element according to claim 1 , further comprising:a signal input line which is electrically connected to the first comb-shaped electrode anda signal output line which is electrically connected to the second ...

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Номер записи: 53
15-02-2018 дата публикации

BONDED SUBSTRATE, SURFACE ACOUSTIC WAVE ELEMENT, SURFACE ACOUSTIC WAVE DEVICE, AND METHOD OF MANUFACTURING BONDED SUBSTRATE

Номер: US20180048282A1
Автор: KAKIO Shoji, KAYANO Rinzo, KISHIDA Kazuhito, KURIMOTO Kouhei, Mizuno Jun
Принадлежит:

There is provided a bonded substrate including: a quartz substrate; and a piezoelectric substrate which is bonded on the quartz substrate and on which a surface acoustic wave propagates, wherein the quartz substrate and the piezoelectric substrate are bonded at a bonding interface through covalent bonding, and a surface acoustic wave element having a higher phase velocity and a higher electromechanical coupling factor than conventional one is obtained by disposing an interdigital electrode on a principal surface of the piezoelectric substrate. 1. A bonded substrate comprising: a quartz substrate; and a piezoelectric substrate which is bonded on or above the quartz substrate and on which a surface acoustic wave propagates , wherein the quartz substrate and the piezoelectric substrate are covalently bonded at an interface.2. The bonded substrate according to claim 1 , wherein the piezoelectric substrate is for exciting a longitudinal-type leaky surface acoustic wave.3. The bonded substrate according to claim 1 , further comprising an amorphous layer between the quartz substrate and the piezoelectric substrate claim 1 , wherein the amorphous layer is covalently bonded to both of the quartz substrate and the piezoelectric substrate.4. The bonded substrate according to claim 3 , wherein the amorphous layer has 100 nm or less of thickness.5. The bonded substrate according to claim 3 , wherein the amorphous layer comprises silicon dioxide or aluminum oxide.6. The bonded substrate according to claim 1 , wherein a thickness of the piezoelectric substrate corresponds to 0.05 to 10 wavelengths with respect to a wavelength of the surface acoustic wave.7. The bonded substrate according to claim 1 , wherein the quartz substrate has 150 to 500 μm of thickness.8. The bonded substrate according to claim 1 , wherein the piezoelectric substrate is composed of lithium tantalate or lithium niobate.9. The bonded substrate according to claim 8 , wherein the piezoelectric substrate is 36° ...

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Номер записи: 54
15-02-2018 дата публикации

ACOUSTIC WAVE ELEMENT, DUPLEXER, AND COMMUNICATION MODULE

Номер: US20180048289A1
Автор: KISHINO Tetsuya
Принадлежит:

An acoustic wave element of the present disclosures has a piezoelectric substrate and an acoustic wave resonator on a main surface of the piezoelectric substrate. The acoustic wave resonator is one being divided into a first IDT electrode and a second IDT electrode which are electrically connected to the first IDT electrode. The first IDT electrode includes a first comb-shaped electrode on the signal input side and a second comb-shaped electrode on the signal output side. The second IDT electrode includes a third comb-shaped electrode on the signal input side and a fourth comb-shaped electrode on the signal output side. The direction of arrangement of the third comb-shaped electrode and the fourth comb-shaped electrode from the third comb-shaped electrode toward the fourth comb-shaped electrode is different from the direction of arrangement from the first comb-shaped electrode toward the second comb-shaped electrode. 1. An acoustic wave element , comprising:a piezoelectric substrate; andan acoustic wave resonator on a main surface of the piezoelectric substrate, whereinthe acoustic wave resonator is being divided into a first IDT electrode and a second IDT electrode which is electrically connected to the first IDT electrode,the first IDT electrode comprises a first comb-shaped electrode on a signal input side and a second comb-shaped electrode on a signal output side,the second IDT electrode comprises a third comb-shaped electrode on a signal input side and a fourth comb-shaped electrode on a signal output side, anda direction of arrangement from the third comb-shaped electrode toward the fourth comb-shaped electrode is different from a direction of arrangement from the first comb-shaped electrode toward the second comb-shaped electrode.2. The acoustic wave element according to claim 1 , further comprising:a signal input line which is electrically connected to the first comb-shaped electrode anda signal output line which is electrically connected to the second comb- ...

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Номер записи: 55
15-02-2018 дата публикации

DUAL PASSBAND RADIO FREQUENCY FILTER AND COMMUNICATIONS DEVICE

Номер: US20180048292A1
Автор: Hey-Shipton Gregory L.
Принадлежит:

Multi-band filters, communications devices, and methods of designing multi-band filters are disclosed. A multi-band filter has a lower pass-band and an upper pass-band separated by an intervening stop-band. The multi-band filter includes a first ladder network and a second ladder network coupled in series. The first ladder network provides transmission zeros at frequencies below a lower edge of the lower pass-band and transmission zeros at frequencies above an upper edge of the upper pass-band. The second ladder network provides transmission zeros at frequencies within the intervening stop-band. 1. A communications device , comprising: a first ladder network and a second ladder network coupled in series between a first port and a second port, wherein', 'the first ladder network is configured to provide transmission zeros at frequencies below a lower edge of the lower pass-band and transmission zeros at frequencies above an upper edge of the upper pass-band, and', 'the second ladder network is configured to provide transmission zeros at frequencies within the intervening stop-band., 'a multi-band filter having a lower pass-band and an upper pass-band separated by an intervening stop-band, comprising2. The communications device of claim 1 , wherein the first ladder network comprises:two or more first-network shunt resonators having respective motional resonant frequencies below the lower edge of the lower pass-band, andtwo or more first-network series resonators having respective anti-resonant frequencies above the upper edge of the upper pass-band.3. The communications device of claim 2 , wherein the second ladder network comprises:two or more second-network shunt resonators and two or more second-network series resonators, whereinrespective motional resonant frequencies of each of the second-network shunt resonators and respective anti-resonant frequencies of each of the second network series resonators are within the intervening stop band.4. The communications ...

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Номер записи: 56
03-03-2022 дата публикации

SUBSTRATE COMPRISING ACOUSTIC RESONATORS CONFIGURED AS AT LEAST ONE ACOUSTIC FILTER

Номер: US20220069797A1
Автор: Dutta Ranadeep, Kim Jonghae, Lan Je-Hsiung
Принадлежит:

A substrate that includes an encapsulation layer, a first acoustic resonator, a second acoustic resonator, at least one first dielectric layer, a plurality of first interconnects, at least one second dielectric layer, and a plurality of second interconnects. The first acoustic resonator is located in the encapsulation layer. The first acoustic resonator includes a first piezoelectric substrate comprising a first thickness. The second acoustic is located in the encapsulation layer. The second acoustic resonator includes a second piezoelectric substrate comprising a second thickness that is different than the first thickness. The at least one first dielectric layer is coupled to a first surface of the encapsulation layer. The plurality of first interconnects is coupled to the first surface of the encapsulation layer. The plurality of first interconnects is located at least in the at least one first dielectric layer.

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Номер записи: 57
25-02-2016 дата публикации

LADDER-TYPE SURFACE ACOUSTIC WAVE FILTER INCLUDING SERIES AND PARALLEL RESONATORS

Номер: US20160056793A1
Автор: FUJIWARA Joji, NAKAMURA Hiroyuki, Nakanishi Hidekazu, TSURUNARI Tetsuya
Принадлежит:

A ladder-type surface acoustic wave filter assembly includes a plurality of series resonators formed on a substrate and connected between an input terminal and an output terminal. A first series resonator has a lowest resonance frequency among the plurality of series resonator. A parallel resonator formed on the substrate and connected between the plurality of series resonators and the ground terminal. A dielectric film is coupled to at least one of the plurality of series resonators and has an inverse temperature coefficient of frequency to that of the substrate. A film thickness of the dielectric film in a region where the second series resonator is formed is smaller than a film thickness of the dielectric film in a region where the first series resonator is formed. 1. A ladder-type surface acoustic wave filter assembly comprising:a substrate for receiving a plurality of components;an input terminal, an output terminal, and a ground terminal;a plurality of series resonators formed on the substrate and connected between the input terminal and the output terminal, the plurality of series resonators including a first series resonator and a second series resonator, each of the first series resonator and the second series resonator having interdigital transducer (IDT) fingers, the first series resonator having a lowest resonance frequency among the plurality of series resonators, at least one of i) a capacitance of the first series resonator being larger than a capacitance of the second series resonator, ii) the first series resonator having more interdigital transducer electrode fingers than the second series resonator, and iii) the first series resonator being separated from the input terminal by at least one series resonator of the plurality of series resonators; anda parallel resonator formed on the substrate and connected between the plurality of series resonators and the ground terminal.2. The ladder-type surface acoustic wave filter assembly of further ...

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Номер записи: 58
14-02-2019 дата публикации

MULTIPLEXER, TRANSMISSION APPARATUS, AND RECEPTION APPARATUS

Номер: US20190052248A1
Автор: OTA Noriyoshi, TAKAMINE Yuichi, YONEDA Toshimaro
Принадлежит:

A multiplexer includes filters and a common terminal connected to an antenna element by a connection path, a first inductance element being connected between the connection path and a reference terminal. A terminal closer to the antenna element among an input terminal and an output terminal of one filter among the filters is connected to a parallel resonator and is connected to the common terminal with a second inductance element interposed therebetween. A terminal closer to the antenna element among an input terminal and an output terminal of each of other filters other than the one filter among the filters is connected to the common terminal and a series resonator. 1. A multiplexer that transmits and receives a plurality of high-frequency signals via an antenna element , the multiplexer comprising:a plurality of elastic wave filters that have pass bands different from one another; anda common terminal that is connected to the antenna element by a connection path, a first inductance element being connected between the connection path and a reference terminal; whereineach of the plurality of elastic wave filters includes at least one of a series resonator connected between an input terminal and an output terminal of each of the plurality of elastic wave filters, and a parallel resonator connected between the reference terminal and a connection path connecting the input terminal and the output terminal to each other;a terminal closer to the antenna element among the input terminal and the output terminal of one elastic wave filter among the plurality of elastic wave filters is connected to the parallel resonator and is connected to the common terminal with a second inductance element interposed therebetween;a terminal closer to the antenna element among the input terminal and the output terminal of each of other elastic wave filters other than the one elastic wave filter among the plurality of elastic wave filters is connected to the common terminal and the series ...

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Номер записи: 59
22-02-2018 дата публикации

GUIDED ACOUSTIC WAVE DEVICE

Номер: US20180054179A1
Автор: Abbott Benjamin P., Chen Alan S., Gamble Kevin J., Steiner Kurt G.
Принадлежит:

An acoustic wave device includes a piezoelectric layer, an interdigital transducer, and a slow wave propagation overlay over a portion of the interdigital transducer. By providing electrode fingers of the interdigital transducer such that a portion of the width thereof is dependent on an electrode period, a desirable wave mode may be maintained in the acoustic wave device. Further, by varying a width of the slow wave propagation overlay based on the electrode period, the desirable wave mode may be further maintained. 1. A device comprising:a piezoelectric layer; a first bus bar parallel to a longitudinal axis; and', 'a first plurality of electrode fingers extending transversely from the first bus bar parallel to a lateral axis;, 'a first interdigital electrode on a surface of the piezoelectric layer and comprising a second bus bar parallel to the longitudinal axis; and', 'a second plurality of electrode fingers extending transversely from the second bus bar parallel to the lateral axis and interleaved with the first plurality of electrode fingers such that a distance between adjacent electrode fingers in the first plurality of electrode fingers and the second plurality of electrode fingers measured along the longitudinal axis is varied; and, 'a second interdigital electrode on the surface of the piezoelectric layer and comprisinga slow wave propagation overlay over at least a portion of the first plurality of electrode fingers and the second plurality of electrode fingers such that a width of the slow wave propagation overlay measured along the lateral axis varies based on the distance between adjacent electrode fingers in the first plurality of electrode fingers and the second plurality of electrode fingers located directly beneath the slow wave propagation overlay.2. The device of wherein the first interdigital electrode and the second interdigital electrode form an interdigital transducer configured to transduce a piston wave in the piezoelectric layer.3. The ...

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Номер записи: 60
25-02-2021 дата публикации

Acoustic wave device with varying electrode pitch

Номер: US20210058060A1
Автор: Rei GOTO
Принадлежит: Skyworks Solutions Inc

A surface acoustic wave resonator comprises interdigital transducer (IDT) electrodes disposed on an upper surface of a piezoelectric substrate between first and second reflector gratings each including reflector electrodes. The IDT electrodes include a central region having a first width in a direction perpendicular to an extension direction of the IDT electrodes and edge regions each having a second width on opposite sides of the central region. The IDT electrodes have a lesser average pitch in the central region than an average pitch of the IDT electrodes in each of the edge regions. The reflector electrodes have a lesser average pitch than the average pitch of the IDT electrodes in the central region.

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Номер записи: 61
25-02-2021 дата публикации

ACOUSTIC WAVE FILTER DEVICE

Номер: US20210058068A1
Автор: MICHIGAMI Akira
Принадлежит:

An acoustic wave filter includes a series-arm resonator, a first parallel-arm resonator, and a second parallel-arm resonator. The series-arm resonator is disposed on a path connecting first and second input/output terminals. The first parallel-arm resonator is disposed on a path that connects ground with a node, which is located on a path connecting the series-arm resonator with the first input/output terminal. The second parallel-arm resonator is disposed on a path that connects ground with a node, which is located on a path connecting the series-arm resonator with the second input/output terminal. The parallel-arm resonator has a resonant frequency lower than the resonant frequency of the second parallel-arm resonator. The first parallel-arm resonator has an anti-resonant frequency higher than the anti-resonant frequency of the second parallel-arm resonator. The second parallel-arm resonator has the highest resonant frequency of all the parallel-arm resonators. 1. An acoustic wave filter device comprising:a first input/output terminal and a second input/output terminal to which a radio frequency signal is input or from which a radio frequency signal is output;a first series-arm resonator including an acoustic wave resonator and disposed on a path that connects the first input/output terminal with the second input/output terminal; anda first parallel-arm resonator disposed on a path that connects a first node with ground, the first node being located on the path that connects the first input/output terminal with the second input/output terminal; whereinthe first series-arm resonator and the first parallel-arm resonator each include at least a piezoelectric body and an IDT electrode;the first parallel-arm resonator further includes a first dielectric layer that adjusts an effective electromechanical coupling coefficient, the first dielectric layer being provided between the piezoelectric body and the IDT electrode of the first parallel-arm resonator; anda dielectric ...

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Номер записи: 62
25-02-2021 дата публикации

MULTIPLEXER WITH ACOUSTIC WAVE FILTER INCLUDING RESONATORS ON A PLURALITY OF DIE

Номер: US20210058069A1
Автор: Komatsu Tomoya
Принадлежит:

Aspects of this disclosure relate to a multiplexer that includes an acoustic wave filter including acoustic wave resonators on at least two die with a transmission line electrically connecting the acoustic wave resonators on the two die. The acoustic wave filter can include a plurality of acoustic wave resonators on a first die electrically connected to at least one acoustic wave resonator on a second die via the transmission line. The acoustic wave resonator on the second die can provide a relatively high impedance at a respective passband of one or more other filters of the multiplexer. This can reduce effects of the transmission line of the acoustic wave filter on a respective passband of one or more other filters of the multiplexer. 1. A multiplexer for filtering radio frequency signals , the multiplexer comprising:a multi-die acoustic wave filter including a first acoustic resonator on a first die and a second acoustic resonator on a second die, the first acoustic resonator being electrically connected to the second acoustic resonator via a transmission line, and the first acoustic resonator being electrically connected to a common node via the transmission line; andan acoustic wave filter coupled to the multi-die acoustic wave filter at the common node, the acoustic wave filter including a plurality of series acoustic resonators and a plurality of shunt acoustic resonators on the second die.2. The multiplexer of further comprising an additional acoustic wave filter coupled to the common node claim 1 , the additional acoustic wave filter including a third acoustic resonator on the second die.3. The multiplexer of wherein the additional acoustic wave filter further includes a fourth acoustic resonator on a third die claim 2 , the third acoustic resonator coupled to the fourth acoustic resonator via a second transmission line.4. The multiplexer of further comprising a switch coupled between the second acoustic resonator and the common node.5. The multiplexer of ...

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Номер записи: 63
13-02-2020 дата публикации

COMPOSITE SUBSTRATE AND METHOD OF MANUFACTURING COMPOSITE SUBSTRATE

Номер: US20200052189A1
Автор: Akiyama Shoji, Kato Koji, Nagata Kazutoshi, TANNO Masayuki
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

An object of the present invention is to provide a method of manufacturing a composite substrate including a piezoelectric layer with less Li amount variation and a support substrate. A method of manufacturing a composite substrate of the present invention includes a step of performing ion implantation into a piezoelectric substrate, a step of bonding the piezoelectric substrate and the support substrate, a step of separating the bonded substrate, at an ion-implanted portion of the piezoelectric substrate, into the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate after the step of bonding the piezoelectric substrate and the support substrate, and a step of diffusing Li into the piezoelectric layer after the separating step. 1. A method of manufacturing a composite substrate including a piezoelectric layer and a support substrate , the method comprising: performing ion implantation into a piezoelectric substrate; bonding the piezoelectric substrate and the support substrate; separating the bonded substrate , at an ion-implanted portion of the piezoelectric substrate , into the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate after the bonding the piezoelectric substrate and the support substrate; and diffusing Li into the piezoelectric layer after the separating.2. The method of manufacturing a composite substrate according to claim 1 , the method further comprising: increasing a temperature of the piezoelectric substrate to a temperature equal to or higher than a Curie temperature and decreasing the temperature of the piezoelectric substrate to a temperature equal to or lower than the Curie temperature while an electric field is applied after the bonding the piezoelectric substrate and the support substrate.3. The method of manufacturing a composite substrate according to claim 1 , the method further comprising: increasing a temperature of the piezoelectric substrate to recover ...

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Номер записи: 64
13-02-2020 дата публикации

ACOUSTIC WAVE DEVICE, FILTER, AND COMPOSITE FILTER DEVICE

Номер: US20200052675A1
Автор: KANAZAWA Tomio, KIDO Syunsuke, NAKAGAWA Ryo, SHIMIZU Hiroshi
Принадлежит:

An acoustic wave device includes an interdigital transducer electrode provided on a piezoelectric substrate, the interdigital transducer electrode includes first and second electrode fingers. The second electrode fingers are connected to an electric potential different from that of the first electrode fingers. A direction orthogonal or substantially orthogonal to a direction in which the first electrode fingers and the second electrode fingers extend is an acoustic wave propagation direction, the interdigital transducer electrode includes a first area centrally provided in the acoustic wave propagation direction, second areas provided on one side and another side of the first area in the acoustic wave propagation direction, and third areas each provided on a side of each of the second areas opposite to the first area in the acoustic wave propagation direction. 1. An acoustic wave device comprising:a piezoelectric substrate; andan interdigital transducer electrode provided on or above the piezoelectric substrate; whereinthe interdigital transducer electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers, the plurality of second electrode fingers being connected to an electric potential different from an electric potential connected to the plurality of first electrode fingers,a direction orthogonal or substantially orthogonal to a direction in which the first electrode fingers and the second electrode fingers extend is an acoustic wave propagation direction; andthe interdigital transducer electrode includes a first area centrally provided in the acoustic wave propagation direction, second areas provided on one side and another side of the first area in the acoustic wave propagation direction, and third areas provided on a side of each of the second areas opposite to the first area in the acoustic wave propagation direction;in the second areas, the first electrode finger and the second electrode finger are alternately ...

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Номер записи: 65
10-03-2022 дата публикации

MULTI-LAYER PIEZOELECTRIC SUBSTRATE WITH CONTROLLABLE DELTA TEMPERATURE COEFFICIENT OF FREQUENCY

Номер: US20220077840A1
Автор: Caron Joshua James
Принадлежит:

An electronic device includes a multi-layer piezoelectric substrate including a carrier substrate, a layer of piezoelectric material disposed on a front side of the carrier substrate, and a back-side layer of material disposed on a rear side of the carrier substrate, the back-side layer of material having a coefficient of thermal expansion different than a coefficient of thermal expansion of the carrier substrate, and one or more acoustic wave devices disposed on a front side of the multi-layer piezoelectric substrate, the one or more acoustic wave devices exhibiting a lesser difference in temperature coefficient of frequency at respective resonant and antiresonant frequencies than in a substantially similar device lacking the back-side layer of material. 1. An electronic device comprising:a multi-layer piezoelectric substrate including a carrier substrate, a layer of piezoelectric material disposed on a front side of the carrier substrate, and a back-side layer of material disposed on a rear side of the carrier substrate, the back-side layer of material having a coefficient of thermal expansion different than a coefficient of thermal expansion of the carrier substrate; andone or more acoustic wave devices disposed on a front side of the multi-layer piezoelectric substrate, the one or more acoustic wave devices exhibiting a lesser difference in temperature coefficient of frequency at respective resonant and antiresonant frequencies than in a substantially similar device lacking the back-side layer of material.2. The electronic device of wherein the one or more acoustic wave devices are included in an acoustic wave filter.3. The electronic device of wherein the one or more acoustic wave devices form a radio frequency filter.4. The electronic device of one of wherein the filter has a near-zero temperature coefficient of bandwidth.5. The electronic device of wherein the temperature coefficient of frequency at the resonant frequency of the one or more acoustic wave ...

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Номер записи: 66
21-02-2019 дата публикации

MULTIPLEXER

Номер: US20190058452A1
Автор: TAKATA Toshiaki
Принадлежит:

A multiplexer includes a transmission-side filter, a reception-side filter, and a cancel circuit connected between a node M and a node N to cancel out a component in a predetermined frequency band that flows along first and second paths. The cancel circuit includes at least one longitudinally-coupled resonator. An average pitch between electrode fingers of interdigital transducer electrodes of the at least one longitudinally-coupled resonator is narrower than an average pitch between electrode fingers of interdigital transducer electrodes of each of series arm resonators and parallel arm resonators that determine the pass band of the transmission-side filter and an average pitch between electrode fingers of interdigital transducer electrodes of each of series arm resonators and parallel arm resonators that determine the pass band of the reception-side filter. 1. A multiplexer comprising:a common connection terminal into which a high-frequency signal is input and from which a high-frequency signal is output;a first terminal;a second terminal;a first filter circuit having a pass band in a first frequency band, the first filter circuit being connected between the common connection terminal and the first terminal;a second filter circuit having a pass band in a second frequency band that differs from the first frequency band, the second filter circuit being connected between the common connection terminal and the second terminal; anda cancel circuit connected between a first node on a first path that connects the common connection terminal and the first terminal to each other or to the first terminal and a second node on a second path that connects the common connection terminal and the second terminal to each other or to the second terminal to cancel out a component in a predetermined frequency band that flows along the first path and the second path; whereinthe cancel circuit includes at least one longitudinally-coupled resonator, and an average pitch between electrode ...

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Номер записи: 67
03-03-2016 дата публикации

ADVANCED THERMALLY COMPENSATED SURFACE ACOUSTIC WAVE DEVICE AND FABRICATION

Номер: US20160065162A1
Автор: Desbonnets Eric, Zinke Christophe
Принадлежит:

This disclosure relates to a method of fabrication of a surface acoustic wave device comprising the step (a) of providing a piezoelectric structure, the step (b) of providing a dielectric structure, wherein the step (b) comprises a step (b1) of metalizing the dielectric structure, and the method further comprising the step (c) of bonding the metalized dielectric structure to the piezoelectric structure. 1. A method of fabrication of a surface acoustic wave device comprising:providing a piezoelectric structure;providing a dielectric structure and metalizing the dielectric structure; andbonding the metalized dielectric structure to the piezoelectric structure.2. The method according to claim 1 , wherein metalizing the dielectric structure is performed so as to form an interdigitated electrode structure.3. The method according to claim 2 , wherein the interdigitated electrode structure has a spacing lower than 100 nm claim 2 , and the dielectric structure exhibits a dielectric constant suitable for allowing a breakdown voltage of higher than 100 V.4. The method according to claim 1 , wherein metalizing the dielectric structure is performed by metal deposition and providing a dielectric structure comprises forming a dielectric layer prior to the metal deposition at a formation temperature claim 1 , the formation temperature being greater than the diffusion temperature of the deposited metal in either the dielectric layer or the piezoelectric structure.5. The method according to claim 1 , wherein the deposited metal is chosen among the group of Au claim 1 , Pt claim 1 , Cu claim 1 , Al claim 1 , Mo claim 1 , W.6. The method according to claim 1 , wherein the dielectric structure comprises a dielectric layer claim 1 , the dielectric layer being made of a material chosen from the group of materials consisting of SiO claim 1 , SiN claim 1 , SiON claim 1 , SiOC claim 1 , SiC claim 1 , DLC claim 1 , and alumina.7. The method according to claim 1 , wherein the dielectric ...

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Номер записи: 68
03-03-2016 дата публикации

ELASTIC WAVE FILTER DEVICE

Номер: US20160065176A1
Автор: ARAKI Masato, DAIMON Katsuya, Mimura Masakazu, TANIGUCHI Yasumasa
Принадлежит:

An elastic wave filter device includes serial and parallel arms and a plurality of elastic wave resonators. Each elastic wave resonator includes an IDT electrode. In the case where a direction in which electrode fingers extend is taken as a width direction of the IDT electrode, the IDT electrode includes a central area at a center in the width direction, a low acoustic velocity area at an outer side portion of the central area, and a high velocity area at a farther outer side portion thereof. A width of the low acoustic velocity area of at least one elastic wave resonator differs from a width of the low acoustic velocity area of the other elastic wave resonators. 1. An elastic wave filter device comprising:a serial arm connecting an input terminal to an output terminal;a parallel arm connecting the serial arm to a ground potential; anda plurality of elastic wave resonators; whereineach of the plurality of elastic wave resonators includes a piezoelectric substrate and an IDT electrode located on the piezoelectric substrate;the IDT electrode includes a first busbar, a second busbar spaced from the first busbar, a plurality of first electrode fingers, each base end of which is electrically connected to the first busbar, that extend toward the second busbar side, and a plurality of second electrode fingers, each base end of which is electrically connected to the second bus bar, that extend toward the first busbar side and are interleaved with the plurality of first electrode fingers;the IDT electrode includes a central area at a center in a direction in which the first and second electrode fingers of the IDT electrode extend, a low acoustic velocity area at an outer side portion of the central area in a direction in which the electrode fingers extend where an acoustic velocity is relatively low in comparison with the central area, and a high acoustic velocity area at an outer side portion in a direction in which the low acoustic velocity area extends where an elastic ...

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Номер записи: 69
20-02-2020 дата публикации

LADDER-TYPE SURFACE ACOUSTIC WAVE DEVICE

Номер: US20200059218A1
Автор: Swamy Manjunath
Принадлежит:

The present disclosure relates to a ladder-type surface acoustic wave (SAW) device, which includes a piezoelectric layer, two reflective structures, at least one series interdigital transducer (IDT) coupled between a first signal point and a second signal point, and at least one shunt IDT. The at least one shunt IDT is coupled at least between the first signal point and ground, or between the second signal point and ground. Herein, the two reflective structures, the at least one series IDT, and the at least one shunt IDT reside over the piezoelectric layer. The at least one series IDT and the at least one shunt IDT are arranged between the two reflective structures. 1. A surface acoustic wave (SAW) device , comprising:a piezoelectric layer;two reflective structures;at least one series interdigital transducer (IDT) coupled between a first signal point and a second signal point; and the two reflective structures, the at least one series IDT, and the at least one shunt IDT reside over the piezoelectric layer; and', 'the at least one series IDT and the at least one shunt IDT are arranged between the two reflective structures., 'at least one shunt IDT coupled at least between the first signal point and ground, or between the second signal point and ground, wherein2. The SAW device of wherein the at least one shunt IDT is coupled between the first signal point and ground.3. The SAW device of wherein the at least one shunt IDT is coupled between the second signal point and ground.4. The SAW device of wherein the at least one shunt IDT comprises a first shunt IDT and a second shunt IDT claim 1 , wherein the at least one series IDT is arranged between the first shunt IDT and the second shunt IDT.5. The SAW device of wherein the at least one series IDT comprises a first series IDT and a second series IDT claim 1 , wherein the at least one shunt IDT is arranged between the first series IDT and the second series IDT.6. The SAW device of wherein:the at least one shunt IDT ...

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Номер записи: 70
01-03-2018 дата публикации

HIERARCHICAL CASCADING IN TWO-DIMENSIONAL FINITE ELEMENT METHOD SIMULATION OF ACOUSTIC WAVE FILTER DEVICES

Номер: US20180062604A1
Автор: Koskela Julius, Plesski Viktor
Принадлежит: RESONANT INC.

A method of analyzing a microwave acoustic wave (AW) structure comprises defining a physical model of the AW structure, partitioning the physical model into a plurality of unit blocks, identifying at least one core block within the plurality of original unit blocks, computing characteristics of each of the at least one core block, deriving characteristics for each of the original unit blocks from the computed characteristics of the core block(s), combining the original unit blocks into a single block having computed characteristics derived from the characteristics of the unit blocks, such that the single block subsumes the plurality of original unit blocks, and deriving at least one electrical response of the physical model at least partially from the computed characteristics of the single block. 1. A method of analyzing a microwave acoustic wave (AW) structure , comprising:defining a physical model of the AW structure;partitioning the physical model into a plurality of unit blocks;identifying at least one core block within the plurality of original unit blocks;computing characteristics of each of the at least one core block;deriving characteristics for each of the original unit blocks from the computed characteristics of the at least one core block;combining the original unit blocks into a single block having computed characteristics derived from the characteristics of the unit blocks, such that the single block subsumes the plurality of original unit blocks; andderiving at least one electrical characteristic of the physical model at least partially from the computed characteristics of the single block.2. The method of claim 1 , further comprising identifying electrical connections to the plurality of original unit blocks claim 1 , wherein the electrical responses for each of the original unit blocks is further derived from the identified electrical connections.3. The method of claim 1 , wherein the computed characteristics of the at least one core block comprises ...

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Номер записи: 71
01-03-2018 дата публикации

HIGH FREQUENCY MODULE

Номер: US20180062615A1
Автор: Kato Masanori, MIZOGUCHI Shinya, SUGAYA Yukiteru
Принадлежит:

A transmission filter in a high frequency module includes serial arm resonators electrically connected in series to a serial arm electrically connecting a shared terminal and a transmission terminal, parallel arm resonators each electrically connected in series to each of parallel arms electrically connecting the serial arm and a ground, a first inductor electrically connected between the ground and a connection end electrically connecting at least the two parallel arm resonators of the parallel arm resonators, and a second inductor electrically connected between the ground and one parallel arm resonator different from the at least two parallel arm resonators of the parallel arm resonators. The second inductor is electromagnetic field coupled to at least one of an antenna side matching element, a transmission side matching element, and a portion of the serial arm in the transmission filter. The first and second inductors obstruct electromagnetic field coupling therebetween. 1. A high frequency module comprising:a shared terminal electrically connected to an antenna;a transmission terminal;a reception terminal;a transmission filter electrically connected between the shared terminal and the transmission terminal;a reception filter electrically connected between the shared terminal and the reception terminal; andan antenna side matching element electrically connected between the shared terminal and a connection portion of the transmission filter and the reception filter, or a transmission side matching element electrically connected between the transmission terminal and the transmission filter; wherein a plurality of serial arm resonators electrically connected in series to a serial arm electrically connecting the shared terminal and the transmission terminal;', 'a plurality of parallel arm resonators each electrically connected in series to each of a plurality of parallel arms electrically connecting the serial arm and a ground;', 'a first inductor electrically ...

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Номер записи: 72
02-03-2017 дата публикации

ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: US20170063328A1
Автор: TOCHISHITA Hikari
Принадлежит:

An elastic wave device includes an elastic wave element which includes a piezoelectric substrate, an IDT electrode, and a pad electrode including a joining layer, a package substrate provided with an electrode land, and a bump electrode which joins the pad electrode and the electrode land. The joining layer includes a first principal surface and a second principal surface, the first principal surface side of the joining layer and the bump electrode are joined together to define a joining portion, and an alloy layer is formed at the joining portion. The thickness of the joining layer is about 2,000 nm or less, the thickness of the alloy layer is about 2,100 nm or less, and the distance from a surface of the alloy layer on the piezoelectric substrate side to the second principal surface of the joining layer is about 1,950 nm or less. 1. An elastic wave device comprising:an elastic wave element which includes a piezoelectric substrate, an IDT electrode disposed on the piezoelectric substrate, and a pad electrode electrically connected to the IDT electrode, the pad electrode including a multilayer structure including a wiring layer, a barrier layer, and a joining layer that are provided in order on the piezoelectric substrate;a package substrate including an electrode land on a surface thereof; anda bump electrode that electrically and mechanically joins the pad electrode and the electrode land and provides a gap between the elastic wave element and the package substrate; whereinthe joining layer of the pad electrode includes a first principal surface on the package substrate side and a second principal surface opposite the first principal surface, the first principal surface side of the joining layer and the bump electrode are joined together to define a joining portion, and an alloy layer is located at the joining portion; anda thickness of the joining layer is about 2,000 nm or less, a thickness of the alloy layer is about 2,100 nm or less, and a distance from a ...

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Номер записи: 73
02-03-2017 дата публикации

SURFACE ACOUSTIC WAVE (SAW) RESONATOR

Номер: US20170063330A1
Автор: Gilbert Stephen Roy, RUBY Richard C.
Принадлежит:

A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the piezoelectric layer reflects acoustic waves and reduces the incidence of spurious modes in the piezoelectric layer. 1. A surface acoustic wave (SAW) resonator structure , comprising:substrate having a first surface and a second surface;a piezoelectric layer disposed over the substrate, the piezoelectric layer having a first surface, and a second surface comprising a plurality of features;a plurality of electrodes disposed over the first surface of the piezoelectric layer, the plurality of electrodes configured to generate surface acoustic waves in the piezoelectric layer; anda layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer, the second surface of the layer having a smoothness sufficient to foster atomic bonding between the second surface of the layer and the first surface of the substrate, wherein the plurality of features reflect acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.2. A SAW resonator structure as claimed in claim 1 , wherein the reflected acoustic waves destructively interfere with acoustic waves in the piezoelectric layer.3. A SAW resonator structure as claimed in claim 1 , wherein at least some of the plurality of features have substantially slanted sides.4. A SAW resonator structure as claimed in claim 3 , wherein at least some of the plurality of features are substantially not in a regular pattern.5. A SAW resonator structure as claimed in claim 3 , wherein the at least some of the plurality of features have a height of ...

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Номер записи: 74
02-03-2017 дата публикации

Surface acoustic wave (saw) resonator having trap-rich region

Номер: US20170063332A1
Автор: Richard C. Ruby, Stephen Roy Gilbert
Принадлежит: Avago Technologies General IP Singapore Pte Ltd

A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer.

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Номер записи: 75
02-03-2017 дата публикации

METHOD OF OPTIMIZING INPUT IMPEDANCE OF SURFACE ACOUSTIC WAVE FILTER

Номер: US20170063336A1
Автор: Costa James R., Willemsen Cortes Balam Quitze Andres
Принадлежит:

Methods of designing band-pass filters are disclosed. A baseline filter design is established, the baseline filter design including a plurality of surface acoustic wave resonators having respective resonant frequencies, the surface acoustic wave resonators organized by resonant frequency into two or more groups. One or more alternative filter designs are established, each alternative filter design derived from the baseline filter design by reordering the resonant frequencies of two or more surface acoustic wave resonators within at least one of the two or more groups. A respective performance metric related to input impedance over a pass band is calculated for each of the baseline filter design and the alternative filter designs. A final filter design is selected from the baseline filter design and the alternative filter designs based on the respective performance metrics. 1. A method of designing a band-pass filter , comprising:establishing a baseline filter design meeting first design criteria, the baseline filter design including a plurality of surface acoustic wave resonators, each surface acoustic wave resonator having a respective resonant frequency, the plurality of surface acoustic wave resonators organized by resonant frequency into two or more groups;establishing one or more alternative filter designs, each of the one or more alternative filter designs derived from the baseline filter design by reordering the resonant frequencies of two or more of the plurality surface acoustic wave resonators within at least one of the two or more groups;calculating a respective performance metric related to an input impedance over a pass band of each of the baseline filter designs and the one or more alternative filter designs; andselecting a final filter design from among the baseline filter design and the one or more alternative filter designs based on the respective performance metrics.2. The method of claim 1 , whereinthe two or more groups include a first group and ...

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Номер записи: 76
04-03-2021 дата публикации

SUPPRESSION OF SPURIOUS SIGNALS IN SURFACE ACOUSTIC WAVE DEVICES

Номер: US20210067127A1
Автор: FUJIWARA Joji, Sasaki Riho
Принадлежит:

An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate. The IDT electrodes having gap regions, edge regions, and center regions. A duty factor of the IDT electrodes in the edge regions is greater than the duty factor of the IDT electrodes in the center regions. A first dielectric film is disposed above the IDT electrodes and an upper surface of the substrate. The first dielectric film has a greater thickness in portions of the center regions than in portions proximate the gap regions. 1. An acoustic wave device comprising:a substrate including a piezoelectric material;interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a duty factor of the IDT electrodes in the edge regions being greater than the duty factor of the IDT electrodes in the center regions; anda first dielectric film disposed above the IDT electrodes and an upper surface of the substrate, the first dielectric film having a greater thickness in portions of the center regions than in portions proximate the gap regions.2. The acoustic wave device of wherein a velocity of an acoustic wave in the center regions is greater than the velocity of the acoustic wave in the edge regions.3. The acoustic wave device of wherein the first dielectric film has a greater thickness in the center regions and portions of the edge regions proximate the center regions than in portions of the edge regions distal to the center regions.4. The acoustic wave device of wherein lengths of the portions of the edge regions proximate the center regions are less than lengths of the portions of the edge regions distal to the center regions.5. The acoustic wave device of wherein lengths of the portions of the edge regions proximate the center regions are at least as long as lengths of the portions of the edge regions ...

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Номер записи: 77
04-03-2021 дата публикации

JOINED BODY OF PIEZOELECTRIC MATERIAL SUBSTRATE AND SUPPORT SUBSTRATE

Номер: US20210067129A1
Автор: Hori Yuji, TAKAGAKI Tatsuro
Принадлежит:

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate to the supporting substrate. 1. A bonded body comprising:a supporting substrate;a piezoelectric material substrate comprising a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; anda bonding layer bonding said supporting substrate and said piezoelectric material substrate and contacting a main surface of said piezoelectric material substrate,wherein said bonding layer comprises a void extending from said piezoelectric material substrate toward said supporting substrate, andwherein a recess is provided on said main surface of said piezoelectric material substrate and said void is communicated with said recess.2. The bonded body of claim 1 , wherein said void penetrates said bonding layer in a direction of thickness of said bonding layer.3. The bonded body of claim 1 , wherein said bonding layer comprises a material selected from the group consisting of silicon oxide and tantalum pentoxide.4. The bonded body of claim 1 , wherein said bonding layer contacts a main surface of said supporting substrate.5. The bonded body of claim 1 , further comprising an intermediate layer between said bonding layer and said supporting substrate.6. The bonded body of claim 1 , wherein said piezoelectric material substrate has a thickness of 20 μm or smaller.7. A bonded body comprising:a supporting substrate;a piezoelectric material substrate comprising a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate- ...

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Номер записи: 78
04-03-2021 дата публикации

JOINED BODY OF PIEZOELECTRIC MATERIAL SUBSTRATE AND SUPPORT SUBSTRATE

Номер: US20210067130A1
Автор: Hori Yuji, TAKAGAKI Tatsuro
Принадлежит:

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate toward the supporting substrate. A ratio (t/t) of a width t at an end of the void on a side of the supporting substrate with respect to a width t at an end of the void on a side of the piezoelectric material substrate is 0.8 or lower. 1. A bonded body comprising:a supporting substrate;a piezoelectric material substrate comprising a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; anda bonding layer bonding said supporting substrate and said piezoelectric material substrate and contacting a main surface of said piezoelectric material substrate,wherein said bonding layer comprises a void extending from said piezoelectric material substrate toward said supporting substrate, and{'b': 2', '1', '2', '1, 'wherein a ratio (t/t) of a width t at an end of said void on a side of said supporting substrate with respect to a width t at an end of said void on a side of said piezoelectric material substrate is 0.8 or lower.'}2. The bonded body of claim 1 ,wherein a recess is provided on said main surface of said piezoelectric material substrate and,wherein said end of said void on the side of said piezoelectric material substrate is communicated with said recess.3. The bonded body of claim 1 ,wherein said end of said void on the side of said supporting substrate reaches a bonding surface of said bonding layer on the side of said supporting substrate.4. The bonded body of claim 1 , wherein said end of said void on the side of said supporting substrate ...

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Номер записи: 79
04-03-2021 дата публикации

SUPPRESSION OF TRANSVERSE MODE SPURIOUS SIGNALS IN SURFACE ACOUSTIC WAVE DEVICES UTILIZING A DENSE FILM ABOVE GAP REGION OF INTERDIGITAL TRANSDUCER ELECTRODES

Номер: US20210067134A1
Автор: FUJIWARA Joji
Принадлежит:

An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on a surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a first dielectric film having a lower surface disposed on the IDT electrodes and the surface of the substrate, and a material having a density greater than a density of the first dielectric film disposed above the gap regions of the IDT electrodes. 1. An acoustic wave device comprising:a substrate including a piezoelectric material;interdigital transducer (IDT) electrodes disposed on a surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions;a first dielectric film having a lower surface disposed on the IDT electrodes and the surface of the substrate; anda material having a density greater than a density of the first dielectric film disposed above the gap regions of the IDT electrodes.2. The acoustic wave device of wherein a velocity of an acoustic wave in the gap regions is greater than the velocity of the acoustic wave in the center regions claim 1 , and the velocity of the acoustic wave in the center regions is greater than the velocity of the acoustic wave in the edge regions.3. The acoustic wave device of wherein the material is a same metal as a metal included in the IDT electrodes.4. The acoustic wave device of wherein the material is a different metal from a metal or metals included in the IDT electrodes.5. The acoustic wave device of wherein the material is a dielectric material.6. The acoustic wave device of wherein the material is disposed within the first dielectric film.7. The acoustic wave device of wherein the material is disposed on an upper surface of the first dielectric film.8. The acoustic wave device of wherein widths of the IDT electrodes in the edge regions are greater than widths of the IDT electrodes in the center regions claim 1 , the width direction being parallel to ...

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Номер записи: 80
04-03-2021 дата публикации

ELASTIC WAVE FILTER DEVICE

Номер: US20210067135A1
Автор: Okada Shinichi
Принадлежит:

An elastic wave filter device includes a ladder filter that includes series arm resonators and parallel arm resonators. In one series arm resonator in which the acoustic velocity in a first and second edge area is lower than in a central area, each first electrode finger includes a large-width portion having a width larger than in remaining portions in the second edge area, and each second electrode finger includes a large-width portion having a width larger than in remaining portions in the first edge area. In at least one of remaining series arm resonators and the parallel arm resonators, each first and second electrode finger includes a large-width portion having a width larger than in remaining portions in both of the first and second edge areas. 1. A filter device comprising:at least one series arm resonator and at least one parallel arm resonator; whereineach of the at least one series arm resonator and the at least one parallel arm resonator includes a first busbar and a second busbar facing each other, a plurality of first electrode fingers each including a base end connected to the first busbar and a leading end located on a side thereof closer to the second busbar, and a plurality of second electrode fingers each including a base end connected to the second busbar and a leading end located on a side thereof closer to the first busbar;the plurality of first electrode fingers and the plurality of second electrode fingers being interposed with one another;the plurality of first electrode fingers and the plurality of second electrode fingers overlap in a first direction in an intersection area;the intersection area includes a central area located centrally in a second direction in which the plurality of first electrode fingers and the plurality of second electrode fingers extend, a first edge area located on a side of the central area closer to the first busbar, and a second edge area located on a side of the central area closer to the second busbar, such that ...

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Номер записи: 81
04-03-2021 дата публикации

SUPPRESSION OF TRANSVERSE MODE SPURIOUS SIGNALS IN SURFACE ACOUSTIC WAVE DEVICES UTILIZING A GAP HAMMER STRUCTURE

Номер: US20210067136A1
Автор: FUJIWARA Joji, Sasaki Riho
Принадлежит:

An acoustic wave device comprises a substrate including a piezoelectric material, and interdigital transducer (IDT) electrodes disposed on a surface of the substrate. The IDT electrodes have gap regions, edge regions, and center regions. A maximum width of the IDT electrodes in the gap regions is greater than the maximum width of the IDT electrodes in the edge regions, thereby achieving a velocity of an acoustic wave in the gap regions being greater than the velocity of the acoustic wave in the center regions, and the velocity of the acoustic wave in the center regions being greater than the velocity of the acoustic wave in the edge regions. 1. An acoustic wave device comprising:a substrate including a piezoelectric material; andinterdigital transducer (IDT) electrodes disposed on a surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a maximum width of the IDT electrodes in the gap regions being greater than the maximum width of the IDT electrodes in the edge regions to cause a velocity of an acoustic wave in the gap regions to be greater than the velocity of the acoustic wave in the center regions, and the velocity of the acoustic wave in the center regions to be greater than the velocity of the acoustic wave in the edge regions.2. The acoustic wave device of wherein an average width of the IDT electrodes in the gap region is greater than the average width of the IDT electrodes in the edge regions and greater than the average width of the IDT electrodes in the center regions.3. The acoustic wave device of further comprising IDT electrode extensions extending from the IDT electrodes in a widthwise direction from the IDT electrodes in the gap regions.4. The acoustic wave device of wherein the IDT electrode extensions extend partially into extending regions of IDT electrodes adjacent to the IDT electrodes from which the IDT electrode extensions extend.5. The acoustic wave device of wherein the IDT electrode extensions ...

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Номер записи: 82
04-03-2021 дата публикации

MULTIPLEXER WITH FILTER HAVING INCREASED REFLECTION CHARACTERISTIC

Номер: US20210067139A1
Автор: Komatsu Tomoya, Wang Yiliu, Wu Nan
Принадлежит:

Aspects of this disclosure relate to a multiplexer that includes at least a first filter having a first passband and a second filter having a second passband. The first filter includes acoustic wave resonators coupled to a common node by a series inductor. The acoustic wave resonators start with a shunt acoustic resonator from the common node. The series inductor and the shunt acoustic resonator of the first filter are together arranged to increase a reflection coefficient of the first filter in the second passband. 1. A multiplexer for filtering radio frequency signals , the multiplexer comprising:a first filter having a first passband that is a lowest passband of all filters of the multiplexer, the first filter including a series inductor and a plurality of acoustic resonators coupled to a common node by way of the series inductor, the plurality of acoustic resonators starting with a shunt acoustic resonator from the common node; anda second filter coupled to the common node and having a second passband that is above the first passband, the series inductor and the shunt acoustic resonator of the first filter together arranged to increase a reflection coefficient of the first filter in the second passband.2. The multiplexer of further comprising a third filter having a third passband and coupled to the common node claim 1 , the third passband being above both the first and second passbands.3. The multiplexer of wherein the series inductor and the shunt acoustic resonator are together arranged to increase the reflection coefficient of the first filter in the third passband.4. The multiplexer of wherein the plurality of acoustic resonators includes a first ladder stage from the common node claim 1 , and the first ladder stage starts with the shunt acoustic resonator.5. The multiplexer of wherein all filters of the multiplexer are arranged as receive filters.6. The multiplexer of wherein the first filter is a transmit filter.7. The multiplexer of wherein the second ...

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Номер записи: 83
04-03-2021 дата публикации

FILTER DEVICE AND DUPLEXER

Номер: US20210067141A1
Автор: KAWASAKI Koichiro
Принадлежит:

In a filter device, a transversal elastic wave filter, which defines a delay element, is connected in parallel with a band pass filter. The transversal elastic wave filter has the same amplitude characteristic as and the opposite phase to the band pass filter at a desired frequency inside an attenuation range of the band pass filter. When a wavelength determined by an electrode finger period of IDTs and is denoted by λ, the distance between the first IDT and the second IDT of the elastic wave filter is about 12λ or less. 1. (canceled)2: A filter device comprising:a first terminal and a second terminal;a band pass filter including at least one series arm resonator and at least one parallel arm resonator connected between the first terminal and the second terminal; anda first acoustic wave filter that is connected in parallel with the band pass filter and between the first terminal and the second terminal.3: The filter device according to claim 2 , whereinthe at least one series arm resonator includes a plurality of series arm resonators;the at least one parallel arm resonator includes a plurality of parallel arm resonators; andthe plurality of series arm resonators and the plurality of parallel arm resonators define a ladder filter.4: The filter device according to claim 2 , wherein the first acoustic wave filter is connected to a ground potential.5: The filter device according to claim 2 , further comprising a second surface acoustic wave filter connected in parallel with the band pass filter and between the first terminal and the second terminal.6: A duplexer comprising:{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'the filter device according to ;'}an antenna terminal;a common connection terminal connected to the antenna terminal; anda second band pass filter connected to the common connection terminal.7: The duplexer according to claim 6 , further comprising a matching inductor connected between the common connection terminal and a ground potential. The ...

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Номер записи: 84
08-03-2018 дата публикации

Acoustic wave device and method of fabricating the same

Номер: US20180069526A1
Автор: Takashi Yamashita
Принадлежит: TAIYO YUDEN CO LTD

An acoustic wave device includes: a mounting substrate; a first wiring layer located on an upper surface of the mounting substrate, the first wiring layer including a first bond region and a first connection region connecting with the first bond region and having a thickness substantially equal to a thickness of the first bond region; an element substrate mounted on the mounting substrate; an acoustic wave element located on a lower surface of the element substrate; and a second wiring layer located on the lower surface of the element substrate, the second wiring layer including a second bond region and a second connection region, the second bond region directly bonding with the first bond region of the first wiring layer, the second connection region connecting the acoustic wave element with the second bond region and having a thickness substantially equal to a thickness of the second bond region.

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Номер записи: 85
08-03-2018 дата публикации

FILTER DEVICE WITH PHASE COMPENSATION, AND ELECTRONIC DEVICES INCLUDING SAME

Номер: US20180069529A1
Автор: BI Zhiqiang, GOTO Rei, Lam Chun Sing, TSURUNARI Tetsuya
Принадлежит:

Phase shift circuits including two or more slanted-finger IDT electrodes, and filters, duplexers, or other electronic devices incorporating same. In one example a filter includes a main filter circuit connected between an input and an output and having a first phase characteristic, and a phase shift circuit connected in parallel with the main filter circuit, the phase shift circuit including first and second capacitor elements and a pair of acoustic wave elements connected in series between the first and second capacitor elements, the pair of acoustic wave elements including a pair of slanted-finger IDT electrodes disposed apart from each other on a single acoustic wave path along which acoustic waves propagate through the acoustic wave elements, the phase shift circuit having a second phase characteristic opposite to the first phase characteristic in an attenuation band that corresponds to at least a portion of a stopband of the main filter circuit. 1. A filter comprising:an input terminal;an output terminal;a main filter circuit connected between the input terminal and the output terminal, the main filter circuit having a first phase characteristic, a first passband, and a first stopband; anda phase shift circuit connected in parallel with the main filter circuit between the input terminal and the output terminal, the phase shift circuit including a first capacitor element, a second capacitor element, and a pair of acoustic wave elements connected in series between the first capacitor element and the second capacitor element, the pair of acoustic wave elements including a pair of slanted-finger interdigitated transducer electrodes disposed apart from each other on a single acoustic wave path along which acoustic waves propagate through the acoustic wave elements, the phase shift circuit having a second phase characteristic that is opposite to the first phase characteristic in an attenuation band that corresponds to at least a portion of the first stopband.2. The ...

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Номер записи: 86
28-02-2019 дата публикации

ELASTIC WAVE DEVICE AND METHOD FOR PRODUCING THE SAME

Номер: US20190068155A1
Автор: Kimura Tetsuya, Kishimoto Yutaka, Omura Masashi
Принадлежит:

An elastic wave device includes a supporting substrate including an upper surface including a recessed portion, a piezoelectric thin film on the supporting substrate to cover the recessed portion of the supporting substrate, an IDT electrode on a main surface of the piezoelectric thin film, the main surface being adjacent to the supporting substrate, and an intermediate layer on a main surface of the piezoelectric thin film, the main surface being remote from the supporting substrate. A space is defined by the supporting substrate and the piezoelectric thin film. The IDT electrode faces the space. Through holes are provided in the piezoelectric thin film and the intermediate layer to extend from a main surface of the intermediate layer to the space, the main surface being remote from the piezoelectric thin film. The elastic wave device further includes a cover member on the intermediate layer and covering opening ends of the through holes. 1. An elastic wave device comprising:a supporting substrate including an upper surface with a recessed portion provided therein;a piezoelectric thin film including first and second main surfaces opposite to each other, the piezoelectric thin film being provided on the supporting substrate so as to cover the recessed portion of the supporting substrate;an IDT electrode provided on the first main surface of the piezoelectric thin film, the first main surface being adjacent to the supporting substrate; andan intermediate layer including third and fourth main surfaces opposite to each other, the intermediate layer being provided on the second main surface, the second main surface being remote from the supporting substrate; whereina space is defined by the supporting substrate and the piezoelectric thin film;the IDT electrode faces the space;a through hole is provided in the piezoelectric thin film and the intermediate layer to extend from the third main surface to the space, the third main surface being remote from the piezoelectric ...

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Номер записи: 87
27-02-2020 дата публикации

Electronic device and module including the same

Номер: US20200067481A1
Автор: Koichiro Kawasaki
Принадлежит: Murata Manufacturing Co Ltd

An electronic device includes a support layer is provided on a piezoelectric substrate and surrounds a functional element. A cover layer is located above the support layer, and faces the piezoelectric substrate. A protective layer seals the support layer and the cover layer. The support layer is provided on at least the outer periphery of the piezoelectric substrate, and defines a hollow portion within the outer periphery of the piezoelectric substrate. The protective layer includes a first portion above the hollow portion, a second portion above the support layer, and a curved surface that is convex in an opposite direction from the piezoelectric substrate.

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Номер записи: 88
27-02-2020 дата публикации

ACOUSTIC WAVE FILTER DEVICE, MULTIPLEXER AND COMPOSITE FILTER DEVICE

Номер: US20200067489A1
Автор: TAKATA Toshiaki
Принадлежит:

An acoustic wave filter device includes at least one series arm resonator and a parallel arm resonator. The series arm resonators and the parallel arm resonator are defined by acoustic wave resonators, an interdigital transducer electrode of the series arm resonators is an apodized interdigital transducer electrode subjected to apodization weighting, in the interdigital transducer electrode of the parallel arm resonator, an intersecting portion includes a central region and low acoustic velocity regions provided at both outer side portions of the central portion, an acoustic velocity of an acoustic wave in the low acoustic velocity region is lower than an acoustic velocity of an acoustic wave in the central region, and a high acoustic velocity region where an acoustic velocity of an acoustic wave is higher than that of the low acoustic velocity region is provided at an outer side portion of each of the low acoustic velocity regions. 1. An acoustic wave filter device comprising:at least one series arm resonator provided in a series arm connecting an input end and an output end; anda parallel arm resonator provided in at least one parallel arm connecting the series arm and a ground potential; whereinthe at least one series arm resonator and the parallel arm resonator are defined by acoustic wave resonators including a piezoelectric substrate and an interdigital transducer electrode provided on the piezoelectric substrate;the interdigital transducer electrode of the at least one series arm resonator is an apodized interdigital transducer electrode subjected to apodization weighting;the interdigital transducer electrode of the parallel arm resonator includes an intersecting portion at which a plurality of first electrode fingers and a plurality of second electrode fingers overlap each other in an acoustic wave propagation direction;the intersecting portion includes a central region, low acoustic velocity regions, and a high acoustic velocity region;the central region ...

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Номер записи: 89
05-06-2014 дата публикации

HETEROGENOUS ACOUSTIC STRUCTURE FORMED FROM A HOMOGENEOUS MATERIAL

Номер: US20140151151A1
Автор: REINHARDT Alexandre
Принадлежит: Commissariat A L'Energie Atomique Et Aux Energies Alternatives

An acoustic structure comprising comprises a layer of material having a first Young's modulus called the intrinsic modulus and a first density called the intrinsic density, characterized in that the layer comprises at least one first zone having said first Young's modulus and said first density and at least one second zone buried in the volume of said layer of material and having a second Young's modulus and/or a second density obtained by implanting and/or by diffusing atoms into the volume of said layer. 1. An acoustic structure comprising a layer of material having a first Young's modulus called the intrinsic modulus and a first density called the intrinsic density , characterized in that the layer comprises at least one first zone (Z) having said first Young's modulus and said first density and at least one second zone (Z) buried in the volume of said layer of material and having a second Young's modulus and/or a second density obtained by implanting and/or by diffusing atoms into the volume of said layer.2. The acoustic structure as claimed in claim 1 , wherein the second Young's modulus and/or the second density result from the creation of a new phase and/or inclusions in the second zone claim 1 , by said implantation and/or diffusion.3. The acoustic structure as claimed in either claim 1 , wherein the material is a piezoelectric material and said structure comprises electrodes on the surface of said layer claim 1 , so as to generate acoustic waves.4. The acoustic structure as claimed in claim 1 , further comprising a buried sublayer of inclusions and/or of a new phase so as to create a guide for elastic waves.5. The acoustic structure as claimed in claim 3 , further comprising at least one first upper electrode and one second upper electrode claim 3 , the second zone comprising periodic sublayers of inclusions and/or new phases defining a buried Bragg mirror structure claim 3 , so as to define a bulk SMR-type wave resonator.6. The acoustic structure as ...

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Номер записи: 90
19-03-2015 дата публикации

ELECTRONIC CIRCUIT

Номер: US20150077194A1
Автор: Ebihara Hitoshi, Hara Hiroshi
Принадлежит: TAIYO YUDEN CO., LTD.

An electronic circuit includes: a switch that includes ports, and selects a port to be connected to an antenna from among the ports; a first filter connected between a first port and a first terminal, and having a pass band which overlaps with a transmission band of a first band; a second filter connected between a second port and a second terminal, and having a pass band which overlaps with a transmission band of a second band; a third filter connected between a third port and a third terminal, and having a pass band which overlaps with reception bands of the first and the second bands; wherein when a signal in the first band is transmitted and received, the switch selects the first and the third ports, and when a signal in the second band is transmitted and received, the switch selects the second and the third ports. 1. An electronic circuit comprising:a switch that includes a plurality of ports, and selects a port to be connected to an antenna from among the plurality of ports;a first filter that is connected between a first port in the plurality of ports and a first terminal, and has a pass band which overlaps with a transmission band of a first band;a second filter that is connected between a second port in the plurality of ports and a second terminal, and has a pass band which overlaps with a transmission band of a second band;a third filter that is connected between a third port in the plurality of ports and a third terminal, and has a pass band which overlaps with a reception band of the first band and a reception band of the second band;wherein when a signal in the first band is transmitted and received, the switch selects the first port and the third port, andwhen a signal in the second band is transmitted and received, the switch selects the second port and the third port.2. The electronic circuit according to claim 1 , further comprising:a fourth filter that is connected between a fourth port in the plurality of ports and a fourth terminal, and has a ...

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Номер записи: 91
11-03-2021 дата публикации

ELECTRO-ACOUSTIC RESONATOR AND METHOD OF FORMING THEREOF

Номер: US20210075397A1
Автор: HONAL Matthias, Jewula Tomasz, KOH Siew Ling, POH Siew Li, QIAO Pei Wen
Принадлежит:

An electro-acoustic resonator comprises a piezoelectric substrate on which an electrode structure is disposed. The electrode structure comprises a metal layer of aluminum and copper, a barrier layer forming a barrier against the diffusion of copper and another metal layer disposed on the barrier layer comprising aluminum. An AlCu intermetallic phase formed after an anneal is restricted to the portion beneath the barrier layer so that Galvano-corrosion of the electrode structure is avoided. 1. An electro-acoustic resonator , comprising:a substrate, the substrate having piezoelectric properties;an electrode structure disposed on the substrate,the electrode structure comprising:a metal layer, the metal layer comprising aluminum and copper;a barrier layer disposed on the metal layer to form a barrier against the diffusion of copper; andanother metal layer disposed on the barrier layer, the other metal layer comprising aluminum.2. The electro-acoustic resonator of claim 1 , wherein the metal layer comprises grains of an intermetallic phase comprising aluminum and copper.3. The electro-acoustic resonator of any of to claim 1 , wherein the barrier layer comprises a metal or a metal nitride.4. The electro-acoustic resonator of any of to claim 1 , wherein the barrier layer comprises at least one of titanium claim 1 , chromium claim 1 , cobalt claim 1 , tantal claim 1 , tungsten claim 1 , a nitride of one of titanium claim 1 , tantal and tungsten.5. The electro-acoustic resonator of any of to claim 1 , wherein the thickness of the metal layer is at least half of the thickness of the other metal layer.6. The electro-acoustic resonator of any of to claim 1 , wherein claim 1 , within the metal layer claim 1 , the mass of copper is equal to the mass of aluminum.7. The electro-acoustic resonator of any of to claim 1 , wherein the thickness of the metal layer is larger than the thickness of the other metal layer claim 1 , wherein the thickness of the other metal layer is in the ...

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Номер записи: 92
07-03-2019 дата публикации

ELASTIC WAVE DEVICE, RADIO-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS

Номер: US20190074814A1
Автор: Kishimoto Yutaka, Mimura Masakazu
Принадлежит:

An elastic wave device includes a supporting substrate, an acoustic reflection layer on the supporting substrate, a piezoelectric layer on the acoustic reflection layer, and an IDT electrode on the piezoelectric layer. The acoustic reflection layer includes three or more low-acoustic impedance layers and two or more high-acoustic impedance layers. At least one of a first relationship in which in which, a film thickness of a first low-acoustic impedance layer closest to the piezoelectric layer is thinner than a film thickness of a low-acoustic impedance layer closest to the first low-acoustic impedance layer, and a second relationship in which a film thickness of a first high-acoustic impedance layer closest to the piezoelectric layer is thinner than a film thickness of a high-acoustic impedance layer closest to the first high-acoustic impedance layer, is satisfied. 1. An elastic wave device comprising:a supporting substrate;an acoustic reflection layer provided on the supporting substrate;a piezoelectric layer provided on the acoustic reflection layer; andan interdigital transducer (IDT) electrode provided on the piezoelectric layer; wherein three or more low-acoustic impedance layers; and', 'two or more high-acoustic impedance layers; and, 'the acoustic reflection layer includesat least one of a first relationship in which a film thickness of, among the three or more low-acoustic impedance layers, a first low-acoustic impedance layer closest to the piezoelectric layer is thinner than a film thickness of a low-acoustic impedance layer closest to the first low-acoustic impedance layer among the three or more low-acoustic impedance layers and a second relationship in which a film thickness of, among the two or more high-acoustic impedance layers, a first high-acoustic impedance layer closest to the piezoelectric layer is thinner than a film thickness of a high-acoustic impedance layer closest to the first high-acoustic impedance layer among the two or more high- ...

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Номер записи: 93
15-03-2018 дата публикации

SURFACE ACOUSTIC WAVE DEVICE, HIGH-FREQUENCY MODULE, AND METHOD OF FABRICATING SURFACE ACOUSTIC WAVE DEVICE

Номер: US20180076786A1
Автор: FUNAHASHI Kentaro
Принадлежит:

A surface acoustic wave device includes a piezoelectric substrate, an IDT electrode, a support layer, a cover layer, and a pillar-shaped electrode. The IDT electrode is provided on a main surface of the piezoelectric substrate. The support layer is disposed around a region where the IDT electrode is provided and has a larger height from the main surfaces than a height of the IDT electrode therefrom. The cover layer is disposed on the support layer and covers the IDT electrode. The pillar-shaped electrode is located on one of the main surfaces where the pillar-shaped electrode is in contact with the support layer. The pillar-shaped electrode is electrically connected to the IDT electrode. The pillar-shaped electrode includes a top surface and a side surface. Each of the top surface and the side surface includes a portion exposed to outside. 1. A surface acoustic wave device comprising:a piezoelectric substrate;an IDT electrode provided on one of main surfaces of the piezoelectric substrate and that vibrates to produce a surface acoustic wave;a support layer disposed around a region on the one of the main surfaces where the IDT electrode is provided and having a larger height from the one of the main surfaces than a height of the IDT electrode from the one of the main surfaces;a cover layer disposed on the support layer and covering the IDT electrode; anda pillar-shaped electrode disposed at a position on the one of the main surfaces where the pillar-shaped electrode is in contact with the support layer and electrically connected to the IDT electrode; whereinan inner space is defined by the piezoelectric substrate, the support layer, and the cover layer; a bottom surface that faces the one of the main surfaces;', 'a top surface; and', 'a side surface that connects the bottom surface and the top surface to each other; wherein, 'the pillar-shaped electrode includesthe top surface includes an exposed portion exposed to an outside; andthe side surface includes an exposed ...

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Номер записи: 94
16-03-2017 дата публикации

ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20170077900A1
Автор: JEONG Tae Sung, NA Seong Hun, Park Seung Wook, Romero Christian
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

An acoustic wave device includes a substrate comprising one surface on which an acoustic wave generator and at least one ground pad are included; a support component formed of an insulating material and disposed on the substrate along a circumference of the acoustic wave generator; and a shielding member electrically connected to the ground pad and blocking reception or emission of electromagnetic waves at the acoustic wave generator. 1. An acoustic wave device , comprising:a substrate comprising one surface on which an acoustic wave generator and at least one ground pad are included;a support component formed of an insulating material and disposed on the substrate along a circumference of the acoustic wave generator; anda shielding member electrically connected to the ground pad and blocking reception or emission of electromagnetic waves at the acoustic wave generator.2. The acoustic wave device of claim 1 , wherein the shielding member comprises:a protective member formed of a conductive material and bonded to the support component so as to be spaced apart from the acoustic wave generator by a predetermined distance; anda connection conductor connecting the ground pad and the protective member to each other while penetrating through the support component.3. The acoustic wave device of claim 2 , wherein the ground pad is formed on one surface of the substrate claim 2 , disposed outside of the support component claim 2 , and connected to the connection conductor through a wiring pattern formed on the substrate.4. The acoustic wave device of claim 2 , wherein a plurality of penetration components are formed in the protective member claim 2 , the support component is disposed in each of the penetration components claim 2 , and a connection terminal claim 2 , connected to the acoustic wave generator claim 2 , is disposed on a surface of the support component disposed in the penetration component.5. The acoustic wave device of claim 1 , further comprising:a protective ...

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Номер записи: 95
24-03-2022 дата публикации

SURFACE ACOUSTIC WAVE DEVICES WITH ULTRA-THIN TRANSDUCERS

Номер: US20220094327A1
Автор: Chen Zhuohui
Принадлежит:

A surface acoustic wave (SAW) device and methods of making the same are disclosed. The surface acoustic wave device includes a piezoelectric layer coupled to a high acoustic velocity layer at a first surface of the piezoelectric layer. At least one transducer is provided over a second surface of the piezoelectric layer. The at least one transducer comprises a plurality of IDT electrodes that are formed from a substantially two-dimensional (2D) conductive material and configured to propagate a surface acoustic wave having an operating wavelength along the piezoelectric layer. 1. A surface acoustic wave device comprising:a piezoelectric layer having a first surface and an opposing second surface;a high acoustic velocity layer operably coupled to the second surface of the piezoelectric layer; andat least one transducer formed on the first surface of the piezoelectric layer, wherein the at least one transducer comprises a plurality of interdigital transducer (IDT) electrodes configured to propagate a surface acoustic wave having an operating wavelength (λ) along the piezoelectric layer, the IDT electrodes being formed from a substantially two-dimensional (2D) conductive material.2. The surface acoustic wave device of claim 1 , further comprising an equipotential layer of the substantially 2D conductive material coupled between the piezoelectric layer and the high acoustic velocity layer claim 1 , the equipotential layer defining a short surface between the piezoelectric layer and the high acoustic velocity layer.3. The surface acoustic wave device of claim 1 , wherein the substantially 2D conductive material is one of monolayer graphene claim 1 , few-layer graphene claim 1 , monolayer borophene claim 1 , and few-layer borophene.4. The surface acoustic wave device of claim 2 , wherein a thickness of the equipotential layer is approximately 0.0034λ.5. The surface acoustic wave device of claim 1 , wherein the piezoelectric layer comprises lithium niobate (LN) or lithium ...

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Номер записи: 96
24-03-2022 дата публикации

Integration Method and Integration Structure for Control Circuit and Acoustic Wave Filter

Номер: US20220094337A1
Автор: QIN Xiaoshan
Принадлежит:

The present disclosure provides an integration method and integration structure for a control circuit and an acoustic wave filter. The method includes: providing a base, the base being provided with a control circuit; forming a first cavity and a second cavity on the base; providing a Surface Acoustic Wave (SAW) resonating plate and a Bulk Acoustic Wave (BAW) resonating structure, a first input electrode and a first output electrode being arranged on a surface of the SAW resonating plate, a second input electrode and a second output electrode being arranged on a surface of the BAW resonating structure, and the BAW resonating structure including a third cavity; facing the surface of the SAW resonating plate towards the base, such that the SAW resonating plate is bonded to the base and seals the first cavity, and facing the surface of the BAW resonating structure towards the base, such that the BAW resonating structure is bonded to the base and seals the second cavity; and electrically connecting the control circuit to the first input electrode, the first output electrode, the second input electrode and the second output electrode. The present disclosure may control the acoustic filters through the control circuit provided on the base, and may avoid the problems of the complex electrical connection process, large insertion loss and the like due to a fact that the existing acoustic filters are integrated to the Printed Circuit Board (PCB) as discrete devices. 128-. (canceled)29. An integration method for a control circuit and an acoustic wave filter , comprising:providing a base, the base being provided with a control circuit;forming a first cavity and a second cavity on the base;providing a Surface Acoustic Wave (SAW) resonating plate and a Bulk Acoustic Wave (BAW) resonating structure, a first input electrode and a first output electrode being arranged on a surface of the SAW resonating plate, a second input electrode and a second output electrode being arranged on a ...

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Номер записи: 97
26-03-2015 дата публикации

DUPLEXER AND MODULE INCLUDING THE SAME

Номер: US20150084712A1
Автор: YAMATO Syuji
Принадлежит:

A first filter channel with superior attenuation characteristics for transmission signals and is less susceptible to influence of transmission signals inputted to a transmission SAW filter device, is disposed closer to a transmission terminal, whereas a second filter channel with poor attenuation characteristics in a transmission band and is more susceptible to the influence of transmission signals inputted to the transmission SAW filter device, is disposed farther from a transmission terminal to improve isolation characteristics in a differential mode of a duplexer. 1. (canceled)2. A duplexer comprising:a transmission SAW filter device configured to output, to a common terminal, an unbalanced transmission signal in a first frequency band that has been inputted from an unbalanced transmission terminal; anda reception SAW filter device configured to output, in a balanced state to balanced first and second reception terminals, an unbalanced reception signal in a second frequency band inputted to the common terminal; wherein a first filter channel spanning from the common terminal to the first reception terminal; and', 'a second filter channel spanning from the common terminal to the second reception terminal; and', 'of the first and second filter channels, the filter channel having poorer attenuation characteristics in the transmission signal band at the respective first and second reception terminals when the transmission signal is inputted to the common terminal is located farther from the transmission terminal than the other filter channel., 'the reception SAW filter device includes3. The duplexer according to claim 2 , further comprising:a piezoelectric substrate on one main surface of which a ladder transmission SAW filter device and a longitudinally coupled resonator-type reception SAW filter device are provided; whereinthe transmission SAW filter device is located in one region of the one main surface sectioned off by an imaginary line that is perpendicular or ...

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Номер записи: 98
26-03-2015 дата публикации

DUPLEXER

Номер: US20150084716A1
Автор: Inoue Shogo, Nakamura Hiroshi
Принадлежит: TAIYO YUDEN CO., LTD.

A duplexer includes a reception filter that is connected between a reception terminal and an antenna terminal and includes one or a plurality of series resonators that are acoustic wave resonators, and a transmission filter that is connected between a transmission terminal and the antenna terminal and includes one or a plurality of acoustic wave resonators, a resonance frequency of a first series resonator that is one of the one or the plurality of series resonators and is closest to the antenna terminal in the reception filter being higher than an upper limit frequency of a reception band of the reception filter. 1. A duplexer comprising:a reception filter that is connected between a reception terminal and an antenna terminal and includes one or a plurality of series resonators that are acoustic wave resonators; anda transmission filter that is connected between a transmission terminal and the antenna terminal and includes one or a plurality of acoustic wave resonators,a resonance frequency of a first series resonator that is one of the one or the plurality of series resonators and is closest to the antenna terminal in the reception filter being higher than an upper limit frequency of a reception band of the reception filter,wherein the first series resonator closest to the antenna terminal in the reception filter is divided into at least two resonators connected in series with each other, and an average resonance frequency of the at least two resonators is higher than the upper limit frequency of the reception band.2. The duplexer according to claim 1 , wherein the first series resonator closest to the antenna terminal in the reception filter is divided into two resonators connected in series with each other claim 1 , and an average resonance frequency of the two resonators is higher than 100.9% of the upper limit frequency of the reception band.3. The duplexer according to claim 1 , wherein the reception filter includes one or a plurality of parallel resonators ...

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Номер записи: 99
18-03-2021 дата публикации

SURFACE ACOUSTIC WAVE DEVICE HAVING MASS-LOADED ELECTRODE

Номер: US20210083645A1
Автор: KADOTA Michio, NAKAMURA Hiroyuki, Tanaka Shuji
Принадлежит:

Surface acoustic wave device having mass-loaded electrode. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength λ can include a quartz substrate and a piezoelectric plate formed from LiTaOor LiNbOdisposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2λ. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density p in a range 1.50 g/cm<ρ≤6.00 g/cm, 6.00 g/cm<ρ≤12.0 g/cm, or 12.0 g/cm<ρ≤23.0 g/cm, and a thickness greater than 0.148λ, greater than 0.079λ, or greater than 0.036λ, respectively. 1. A surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength λ , comprising:a quartz substrate;{'sub': 3', '3, 'a piezoelectric plate formed from LiTaOor LiNbOand disposed over the quartz substrate, the piezoelectric plate having a thickness greater than 2λ; and'}{'sup': 3', '3', '3', '3', '3', '3, 'an interdigital transducer electrode formed over the piezoelectric plate, the interdigital transducer electrode having a mass density ρ in a range 1.50 g/cm<ρ≤6.00 g/cm, 6.00 g/cm<ρ≤12.0 g/cm, or 12.0 g/cm<ρ≤23.0 g/cm, and a thickness greater than 0.148λ, greater than 0.079λ, or greater than 0.036λ, respectively.'}2. The surface acoustic wave device of wherein the interdigital transducer electrode has a metallization ratio (MR) of approximately 0.5 claim 1 , where MR=F/(F+G) claim 1 , the quantity F being a width of an electrode finger and the quantity G being a gap dimension between two electrode fingers.3. The surface acoustic wave device of wherein the interdigital transducer electrode includes aluminum claim 1 , titanium claim 1 , magnesium claim 1 , copper claim 1 , nickel claim 1 , silver claim 1 , molybdenum claim 1 , gold claim 1 , platinum claim 1 , tungsten claim 1 , tantalum claim 1 , hafnium ...

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Номер записи: 100