Image forming device

Mode of execution

The following, with reference to the Figure an embodiment of the present invention to carry out a detailed description.

(Section 1 embodiment)

Figure 1 is section of the present invention 1 of the embodiment has a matrix of the Image forming apparatus the electron source of the electron emission element plan view of the base plate. In Figure 1 in, 23 is a positive side element electrode, 24 is the negative element electrode, 25 is Y direction wiring (lower wiring), 26 is X direction wiring (upper wiring), 27 of surface conduction type electron emission element is the element film, has an electron-emitting part.

Furthermore, 28 is the baffle, 29 in the baffle 28 near the electron-emitting element is provided in the vicinity of an electrode correcting the trajectory of the electron. if, states , the trajectory of the electron correcting electrode 29 is used for correcting the trajectory of the electron to the electrode. The trajectory of the electron correcting electrode 29 and the X direction wiring 26 is connected.

Element electrode 23, 24 is a sputtering method on the glass substrate to form a first layer of titanium Ti (5 nanometer) as the bottom layer, then forming a platinum Pt layer on it (40 nanometer), subsequently through the photoresist coating, exposure, developing, a series of the photolithography etching pattern and form. The trajectory of the electron correcting electrode 29 of the element electrode 23, 24 formed at the same time.

On X direction wiring 25 and Y direction wiring 26 of the wiring material, expect to have low resistance, in order to give a plurality of surface-conductive element providing a substantially equal voltage is, according to the appropriately setting a material, film thickness and width.

As the wiring for a total of Y direction wiring 25 (lower wiring), with an incline element electrode 23 are connected, and in order to connect their linear pattern is formed in such a manner. The wiring material slurry appearance of inks, by screen printing, drying, according to a predetermined pattern exposure, developing, and then, the temperature of the firing under about 480° forming wiring. Wiring has a thickness of from about 10 the  m, line thickness is about 50 the  m. Although Figure 1 there is no illustrated in, Y direction wiring 25 of the terminal part of the increased dimension, in order to take wiring used as the electrode.

Furthermore, in order to make the Y-direction wiring (lower wiring) 25 and X direction wiring (upper wiring) 26 insulating, forming the interlayer insulating layer (not shown). It forms is covered on the X direction wiring 26 (wiring) is formed first in the Y direction of the wiring 25 at an intersection of the (lower wiring), and, in the wiring part of the opening formed in the X direction wiring 26 (upper wiring) and the other a negative side element electrode 24 can be electrically connected with the contact hole (not shown).

In the interlayer insulating film is formed, to the main ingredient PbO photosensitive glass for after doing a silk-screen printing, the exposure, developing treatment repeated four times, the temperature of about 480° and fired in the presence. The overall thickness of the interlayer insulating layer is about 30 the  m, line width is about 150 the  m.

Furthermore, X direction wiring (upper wiring) 26 is formed in the first interlayer insulating film for screen printing after drying aluminum paste India medicinal preparation , the same processing on the same, the two coating after about 480° to the temperature of the firing under. X direction wiring 26 clamp the interlaminar insulating film and the Y-direction wiring (lower wiring) 25 cross, also through an interlayer insulating film of the contact hole portion and another negative side element electrode 24 is connected.

Through the wiring and the other a negative side element electrode 24 is connected with the, in kneading board for use as a scanning electrode. The X direction wiring 26 is about the thickness of the 20  m. According to the method for forming the same as the aforesaid with the not shown external driving circuit is connected with the draw-out wiring. Although not shown in the Figure, in accordance with the method for forming the same as the aforesaid external lead-out terminals of the driving circuit. Therefore, having XY matrix wiring is made of electron source substrate.

Secondly, the production of the electron source base plate to fully after washing, a solution containing the hydrophobic agent used for surface treatment, the surface to have a hydrophobic. The purpose of this kind of treatment in order to make the later is used for coating of the aqueous solution of the film forming element in the element electrode can properly be expanded on.

Furthermore, between the element electrodes by ink-jet coating and heating the firing process forms the element film 4. This element film 4 forming processing and to before treatment with the fig. 1 electronic part shown in 27. Figure 2 is shown a schematic diagram of the process. Figure 2A is element shown in of the substrate before film formation. Figure 21 is a glass substrate, 23, 24 is the element electrode, and Figure 1 the same as in.

In this embodiment, in order to get as the element film of palladium membrane, first of all, in the water and the isopropyl alcohol (IPA) to the 85 [...] 15 formed in the proportion of the aqueous solution, dissolving 0.15 weight % of palladium complex, of the solution containing organic machine arrowhead is made. In addition also add some additive.

Secondly, as shown in Figure 2B shown, using a piezoelectric element of the ink-jet ejecting device is used as the liquid droplet providing unit 37, the solution is adjusted to the diameter of the of the 60  m, between applied to the electrode. Furthermore, the substrate in the air firing is heated at 350° 10 minutes, of the generated (PdO). As a result, as shown in Figure by 2C diameter is about shown in the 60  m, the thickness is at most 10 nanometer the element film. According to the above treatment processes, of the component part has formed the PdO film.

Furthermore, the forming process described. The process of the referred to as forming processing means that the conductive film (element film 4) energization processing, in the inside, thereby forming the process of the electronic part. Specific method is, removing the glass substrate 21 of the surrounding, only the electrode portion, covering a mantle shape of the cover, in order to cover the whole substrate, the internal between the base plate forms the vacuum space. In this state, by the external power supply from the electrode terminal portion to the X direction wiring between the wiring and the Y direction of the voltage, is between the electrodes of the component, partial destruction of the conductive film, the nature of the deformation or change, to form the high-resistance state of the electron-emitting part.

At this time, if the vacuum atmosphere containing some hydrogen of heating is, because of hydrogen the promotion of reduction, of the Pd film into PdO. When the change, because of membrane reduction contraction is generated in a portion of the crack, the position and the shape of the crack generated on the original the homogeneity of the membrane have a great impact. The plurality of components in order to suppress the deviation of the characteristic, the above-mentioned crack in the element electrode desired intermediate part between, and is straight linear.

Furthermore, although formed in the vicinity of a crack forming, will also be under certain voltage to cause an electron emission, however, the reality condition probability of the occurrence of such a situation is very low. The obtained conductive film the resistance value of the value of Rs 10² -10⁷ Ω.

Figure 3 is shown in the voltage waveform of the forming treatment. The pulse waveform of the voltage applied. Figure 3A is shown in the pulse peak voltage is applied to the situation of the constant voltage, Figure 3B ridgy high slope is a pulse peak values shown in the position of the one side.

Figure 3A in, T1 and T2 that the voltage waveform of the pulse width and the pulse interval, T1 is 1 subsidence second-10msec, T2 to 10 the second-100msec the, proper choice of peak of the triangular waveform (the peak value of the voltage). On the other hand, in Figure 3B under the condition of, T1 and T2 is equal to the size of the, crest of the triangular wave (peak voltage during forming), for example in a certain step, 0.1V increment.

The end of the forming, the forming of the pulse is inserted between the conductive film will not lead to local damage, the voltage of the deformation degree, for example, 0.1V size of the pulse voltage, the element current is measured, and the resistance value from the result, for example, into a forming treatment before the resistance value of the resistance value of 1000 times the above, forming the end of processing.

Next, activation processing described. First of all, in this state, electron generating efficiency is very low. Therefore, in order to improve the electron emission efficiency, the above-mentioned element is referred to as the desired activation processing process. The processing containing the organic compounds under moderate vacuum environment, as the shaping processing, the shape of the cover cover lid in the base plate to form the vacuum space, through the X direction wiring and a Y-direction wiring from the outside to the element electrode to the repeated application of the pulse voltage. Furthermore, into the gas containing carbon atoms, in the vicinity of the cracks by the accumulation of the carbonaceous elements or carbonized compound as a carbon film.

In the activation process, the carbon source using phenmethyl cyanogen , through slow releases valve into the vacuum space, the maintenance of the air pressure as the 1.3 × 10^-4 Pa. Although the shape of the vacuum device and vacuum device use some effects of the parts and the like, but the pressure is preferably the phenmethyl cyanogen 1 × 10^-5 Pa -1 × 10^-2 Pa degree.

Figure 4A, B is activated process is shown for use in preferred examples of the applied voltage. The maximum voltage value of the applied 10-20V appropriate selection within the range of. Figure 4A of in T1 is the voltage waveform of the positive and negative pulse width, T2 is a pulse interval, voltage value is set as the positive and negative of the absolute value is equal to. Furthermore, chart 4B of in T1 and T1 the voltage waveform is [...] the masakazu negative pulse width, T2 is a pulse interval, T1> the T1 [...] , voltage value is set as the positive and negative of the absolute value is equal to.

At this time, in the element electrode 24 the voltage is positive, from the element electrode 24 to the element electrode 23 If the flow of the direction of the element current forward. Approximately 60 minutes after the substantially saturated Ie emission current when the energization stopping, slow releases valve is closed, activating the processing is finished. Through the above-mentioned processes, can be produced with electron source element of the electron source substrate.

Below, showed 5, Figure 6 to illustrate the structure and the manufacturing method of the above-mentioned component of the basic characteristics of the electron-emitting element. Figure 5 showing the determination of the component formed with the above-mentioned electron emission characteristic determination evaluation device. Determining the element electrode of the electron emission element of the element current flow between anode and If Ie of the emission current, element electrode 23, 24 and the power supply 51, and ammeter 50 is connected, in the electron emission element of the disposed above the power supply 53 and current meter 52 is connected with the anode 54.

In other words, 21 said glass substrate, 23, 24 said element electrode, 4 said film containing the electronic part, 27 representing the electronic transmission part. 51 is used for an element is applied on the component of the power supply voltage Vf, 50 flowing through the measuring electrode 23, 24 containing the electronic part of the conductive film 27 of the element current If of the current meter, 54 is to catch from the elements of the electronic part of the emission current emitted by the anode Ie, 53 is to the anode 54 of the high-voltage power supply voltage is applied, 52 is to determine from the electronic transmission part 27 Ie emission current emitted the current meter.

Electronic transmitting element and anode 54 is set in the vacuum device, the vacuum device including the not illustrated in the Figure and the exhaust in the vacuum apparatus such as vacuum apparatus, the vacuum under the desired measuring and evaluation of this element. Furthermore, anode 54 voltage of 1kV -10kV, anode 54 and electron emission element H is the distance of 1 mm -8 mm.

Figure 6 show the graphics 5 evaluation of the determination of the measurement of the emission current Ie and element current with the element voltage Vf If the typical example of the relationship between. Furthermore, emission current Ie and element current significantly different size If, Figure 6 If in order to to the current, the change of the Ie for qualitative comparison, the longitudinal axis of the respective mark by any units. Measuring voltage is applied between the element 12V voltage of the electric current that is to be transmitted, the result is an average of 0.6 the  A, the average electron emission efficiency to 0.15%. Uniformity between the component is good, each component of the current between the changes in Ie to 5%, is a good value.

The electron emission element has three Ie emission current characteristic. 1st, as shown in Figure 6 is shown in, when applying the voltage of the of the element to a certain voltage (called a threshold voltage, Figure 6 the in Vth) above, emission current increase sharply Ie, on the other hand, when the power is below the threshold voltage Vth, emission current on it is very difficult to detect the Ie. In other words, we can see, the the emission current Ie as having a clear threshold value Vth of the nonlinear element of the electric characteristic.

2nd, because the emission current Ie related to the element voltage Vf, the emission current can be Ie to control element voltage Vf. 3rd, anode 54 capture the transmission charge and the element voltage Vf applied time the relevant. In other words, anode 54 to catch the electric charge can be the amount of by the element voltage Vf is applied to control of time.

Figure 7 is the use of the above-mentioned electron source substrate of the Image forming apparatus when a strabismus Figure. Figure 7 is a part of the display is cut. In the Figure, 35 is panel, 36 is back plate. Panel 35 and the back plate 36 is arranged between the partition plate 28. 38 is a supporting frame, 39 are that the outer shell is. Housing 39 is by fig. 7 of the electron source substrate shown in 34, panel 35, back plate 36 and the support frame 38 are combined to form the.

Panel 35 is made of a glass substrate 93, fluorescent film 84, the metal back 85 composition. Fluorescent film 84 is only monochromatic membrane by phosphor to form, when the color fluorescent screen by phosphor formed by arranging such as is known as the black stripe or black matrix of the black conductors 91 and phosphor 92 form. Provided with black stripes, the purpose of the black matrix, is in order to make the necessary color display of each of the three primary colors of the phosphor of the phosphor 92 in order to color black coated between, or can inhibit because fluorescent film 84 to drop in the contrast ratio of the reflection light.

The fluorescent film 84 the inner surface side of the normal metal back 85. The metal back 85 is to improve from the purpose of the inner surface side of the phosphor to the panel 35 of the brightness of the light of mirror reflection, and applied to the anode of the electron beam accelerating voltage (accelerating electrode). In making metal back bottom after forming a fluorescent film, the inner surface side of the fluorescent film to smoothing processing (usually referred to as film coating), then, through the vacuum evaporation coating and other deposition and Al.

Furthermore, when in the sealed, under the condition in a color display, each color phosphor and must be one-to-one corresponding to the electron emission element, therefore, must be used for alignment of the substrate with the position of the full method.

In addition to the requirements for the vacuum degree during sealing 10^-5 Pa other than the extent, in order to in the housing 39 can maintain the vacuum degree after sealing, getter processing is sometimes needed. This is, in a housing 39 just before after or seal, use immediately such as resistance heating or high-frequency heating, the heating method, the predetermined position within the housing (not shown) is disposed on the heating of the getter, to form a vapor deposition film processing. The getter usually by the Ba as a main component such as, for example, by the adsorption of vapor deposition film, can maintain the 1 × 10^-5 Pa even 1 × 10^-10 Pa degree of vacuum.

According to the present invention of surface conduction type electron emission element of the basic characteristics, from the electronic part by of electrons emitted from the element electrode of the applied between relatively disposed greater than or equal to the threshold voltage of the peak value of the pulse voltage amplitude and the control of the width. Also can be used to control current to an intermediate value of the voltage, and can display an intermediate tone.

Furthermore, in disposing the plurality of electron-emitting element, of the line scanning line signals for selecting a line is determined, through the information signal lines applied to each element of the above-mentioned pulse-like voltage, to the arbitrary element can be combined with the appropriate voltage, on the element. Furthermore, as the use of an intermediate tone of the input signal to the electronic transmitting element of the modulation mode, can cite voltage modulation mode and a pulse wave amplitude modulation mode.

Furthermore, the driving mode of the concrete. Figure 8 based on the NTSC television signals to drive in order to use the electron source of the simple matrix configuration of the television signal of the display panel for display of the Image display device of the embodiment.

In Figure 8 in, 1101 is an Image display panel, 1102 is the scanning circuit, 1103 that the control circuit, 1104 is shift register, 1105 yes-line memory, 1106 is a synchronous signal separating circuit, 1107 is the information signal generator, and Vx Va is a direct current voltage source. The use of electron emission element to the Image display panel 1101 of the X wiring is applied to the scanning line signal scanning circuit (X driver) 1102, the information signal Y wiring is applied to the Y driver information signal generator 1107 are connected.

In the voltage modulation mode, as the information signal generator 1107 generates a fixed length of the voltage pulse wave, and according to the input data for the appropriate pulse peak adjustment circuit. In the implementation in pulse wave amplitude modulation mode, information signal generator 1107 generates a fixed peak voltage of the pulse wave, and according to the input data for the appropriate voltage amplitude adjustment circuit.

The control circuit 1103 based on from the synchronization signal separation circuit 1106 Tsync the synchronization signal sent out all the partial output Tscan, Tmry Tsft and each of the control signal. Synchronous signal separating circuit 1106 is input from the outside of the television signal of the NTSC separating the synchronous signal component and the luminance signal component of the circuit. This luminance signal component to provide the synchronizing signal to the shift register 1104.

Shift register 1104 each row of the Image to the time continuous Serial input of a Serial-parallel conversion of the luminance signal, and based on the control circuit 1103 transferred by the action of the clock signal. A Serial-parallel conversion of the data of the one line of the Image (equivalent to the electron emission element of the n element driving data) as the signal n which are arranged side by side, from the shift register 1104 in output.

Line memory 1105 is the time necessary for the internal memory of the Image data and the memory device, memory content is input to the information signal generator 1107. The information signal generator 1107 is based on the luminance signal to properly drive each electron emission element signal source, its output signal through the Y wiring provided to the display panel 1101 inner, and applied to the and through the X wiring selected scanning line on the crosspoint of the electron emission element. By sequentially scanning X wiring, of the display panel to drive all the electron-emitting element.

As mentioned above, the display panel of the XY wiring to each electron-emitting element with the voltage, the electron emission, the anode Hv through the high-voltage terminal of a metal back 85 is added on the high-pressure, so that the generated electron beam accelerating, collision fluorescent film 84, the Image can then be displayed.

The above form of the Image display device, is the Image forming device of the invention one of the examples. Based on the technology of the present invention and various deformation changes can be made. The input signal is NTSC signal, but the input signal is not limited to such a, PAL, HDTV signal are also the same.

Fig. 9 is chart 1 A-A line of the section of the Figure. Figure 1 and Figure 7 the same symbols to the same part. The trajectory of the electron correcting electrode 29 and the electron-emitting element, that is, by this embodiment the element electrode 23, 24 and electronic part of the element film of the surface conduction type electron emission element, arranged on the substrate (back plate 36) on the same surface, and with the negative element electrode 24 form a whole, when the negative potential applied to the electron emission. As a result, as shown in Figure 9, has formed the equipotential line, and the electron-emitting element 27 a formed in the vicinity of the electronic far away from the diaphragm 28 of the electric field, that is, in the Figure the shown A correcting electrode 29 which is repellent to the trajectory of the electron.

On the other hand, in the form shown in the diagram because B of the baffle 28 is charged and 28 attract the trajectory of the electron, because the correcting electrode 29 is offset of the trajectory of the electron A, because the baffle 28 is charged and 28 of the side of the trajectory of the electron is attracted to the correction. In this way, the baffle 28 is prevented from being charged the impact of the, is unbalanced the tune can be no Image.

Correcting the trajectory of the electron to the electrode 29 to correct the baffle 28 charged by the trajectory of the electron, may not also to the partition 28 providing high resistive film, to the baffle 28 to on the surface of the high resistance film is possible. If the baffle 28 give a high resistance film, it may has a wide control range.

In this embodiment, electron source substrate, and the distance between the acceleration electrode to 1.6 mm, is element spacing the 615 × 205  m, the trajectory of the electron correcting electrode 29 for the 100 × 20  m. If plus 10kV the accelerating voltage, element driving voltage negative side (X direction wiring) is -7V, the positive side of the (Y-direction wiring) + 7V to drive the element, because of the electron beam caused by the baffle-correction is attracted, the formation of the electron beam the deviation of the position of the point is suppressed, a high-quality Image can be formed.

In this embodiment, the element electrode 23, 24 and the trajectory of the electron correcting electrode 29 is formed at the same time, can not change process, correction to the trajectory of the electron.

Furthermore, in this embodiment, to determine the electron-emitting element on the substrate (back plate 36) the position of the on, as an electron-emitting element with use of the element electrode of the components 23, 24 the same process to form the electronic orbit correcting electrode 29, so electronic transmitting element and the trajectory of the electron that the relative position between the electrodes, for example, than on the surface of the separator is integrally formed on the trajectory of the electron correction electrode is more accurate, but also, in the described than the rear surface of the trajectory of the electron are formed on the wiring correction electrode is also more accurate.

In this embodiment, in order to in the manufacturing the Image forming apparatus is in the high vacuum degree, configuration the necessary minimum number of baffle 28 (thick the 200  m). In other words, the baffle 28 is not disposed on all of the X direction wiring 26 on, and by which is disposed a plurality of electronic transmission part 27 electron emission line of a configuration of the plurality of rows, the trajectory of the electron correcting electrode 29 is disposed in the baffle plate 28 and between the latest electronic emission line.

(Section 2 embodiment)

Figure 10 is section of the present invention 2 plan view of the embodiment. Furthermore, in the Figure 10 in, to the Figure 1 is the same as given in the Figure the part of the same marks, and the description is omitted. The section 1 compared with the mode of execution, the difference lies in the use of the cylindrical baffle 28, the other form with the section 1 in the same manner as the implementation.

In this embodiment, between the accelerating electrode of the electron source substrate, and a distance of 1.4 mm, is element spacing the 615 × 205  m, the trajectory of the electron correcting electrode 29 for the 100 × 20  m. The section 1 is the implementation of the different modes, the trajectory of the electron correcting electrode 29 in surrounding only φ 150 the cylindrical   m 28 near the 4 position formed on the element. The section 1 of the embodiment is the same as, the trajectory of the electron correcting electrode 29 and the element electrode 23, 24 is formed at the same time.

Here, plus 8kV the accelerating voltage, element driving voltage is negative side (X direction wiring) is a -7.5V, the positive side of the (Y-direction wiring) + 7.5V element to be driven, the formed position of the electron beam is suppressed, a high-quality Image can be formed.

In this embodiment also, since the element electrode 23, 24 and the trajectory of the electron correcting electrode 29 is formed at the same time, can not change process, correction to the trajectory of the electron. Furthermore, as shown in Figure 11, the baffle 28 position different times, the baffle 28 is formed in the vicinity of the trajectory of the electron surrounding the correcting electrode 29, the same correction can be carried out.

In this embodiment also is, to determine the electron-emitting element on the substrate (back plate 36) the position of the on, as an electron-emitting element with use of the element electrode of the components 23, 24 the same process to form the electronic orbit correcting electrode 29, so electronic transmitting element and the trajectory of the electron that the relative position between the electrodes, for example, than on the surface of the separator is integrally formed on the trajectory of the electron correction electrode is more accurate, but also, in the described than the rear surface of the trajectory of the electron are formed on the wiring correction electrode is also more accurate.

In this embodiment it is also, in order to in the manufacturing the Image forming apparatus is in the high vacuum degree, configuration the necessary minimum number of baffle 28. In other words, the baffle 28 is not disposed on all of the X direction wiring 26 on, and by which is disposed a plurality of electronic transmission part 27 electron emission line of a configuration of the plurality of rows, the trajectory of the electron correcting electrode 29 is disposed in the baffle plate 28 and between the latest electronic emission line.

(Section 3 embodiment)

Figure 12 is the section of the invention 3 plan view of the embodiment. Fig. 13 is fig. 12 A-A line of the section of the Figure. In this embodiment, and the section 2 in the same manner as the use of the cylindrical baffle 28, and, X direction wiring 26 formed by a part of the trajectory of the electron correcting electrode 29. The trajectory of the electron correcting electrode 29 using screen printing, on the wiring in the X direction is formed in the vicinity of the baffle. The trajectory of the electron correcting electrode 29 in order to surround the cylindrical baffle is 28 way of the 4 divided to form, each of the large and small for the 100 × 100  m, the line width of the 50  m, the thickness of the 10  m.

As shown in Figure 13, in order to make the electron beam convergence, in panel 35 on the electronic transmission part 27 is 0.4 mm is arranged at the height of the grid 30, plus 2.5kV voltage. Grid opening 31 is of the 300 × 120  m. Grid 30 of the upper and lower are respectively provided with a cylindrical, thick 200 the baffle   m 28, to clamp the grid wiring part 32 is fixed on the grid 30 is. Other form with the section 1 in the same manner as the implementation. Electron source substrate and accelerating the distance between the electrodes is 1.6 mm, the element spacing the 500 × 200  m.

Here, plus 10kV the accelerating voltage, element driving voltage is negative side (X direction wiring) is a -7.5V, the positive side of the (Y-direction wiring) + 7.5V to drive the element, as shown in Figure 13 of a modified electrode repel each other because of the baffle, and the trajectory of the electron A be charged by the trajectory of the electron B, the formed position of the electron beam is suppressed, is capable of forming a high-quality Image.

In this embodiment, electronic transmitting element and the trajectory of the electron that the relative position between the electrodes, for example, than on the surface of the separator is integrally formed on the trajectory of the electron correction electrode is more accurate.

In this embodiment it is also, in order to in the manufacturing the Image forming apparatus is in the high vacuum degree, configuration the necessary minimum number of baffle 28. In other words, the baffle 28 is not disposed on all of the X direction wiring 26 on, and by which is disposed a plurality of electronic transmission part 27 electron emission line of a configuration of the plurality of rows, the trajectory of the electron correcting electrode 29 is disposed in the baffle plate 28 and between the latest electronic emission line.

(Paragraph 4 embodiment)

Figure 14 is a section of this invention 4 plan view of the embodiment. Figure 15 Figure 14 A-A line of the section of the Figure. In this embodiment, the trajectory of the electron correcting electrode 29 and the Y-direction wiring 25 is connected. The trajectory of the electron correcting electrode 29 is disposed in the partition plate 28 adjacent electronic transmission part 27 and 28 on the position of the opposite side. The electronic orbit correcting electrode 29 positive voltage is added, in the electronic transmission part 27 electronic steering formed in the vicinity of the track of the partition on the side opposite to the electric field.

In this embodiment, element electrode after the formation, after a resist pattern is formed, using a sputtering method to form the thickness is 200 nanometer a is made of silicon oxide of the insulating layer 33, remove calcined (lift-off) make the desired pattern. Later, the use of the section 1 shown in the mode of execution of the component electrode the same method in order to size is 150 × 20 the trajectory of the electron formed   m correcting electrode 29. Other form with the section 1 in the same manner as the implementation. Furthermore, baffle 28 has a thickness of from about 200 the  m, electronic substrate and accelerating the distance between the electrodes is 1.8 mm, the element spacing the 640 × 210  m.

Here, plus 10kV the accelerating voltage, element driving voltage is negative side (X direction wiring) to -9V, the positive side of the (Y-direction wiring) + 6V to drive the element, as shown in Figure 15 of a correction electrode repel each other because of the baffle, and the trajectory of the electron A is attracted is caused by electrification of the known trajectory of the electron B, the trajectory of the electron is corrected, the formed position of the electron beam is suppressed, a high-quality Image can be formed. Furthermore, in this embodiment it is because the trajectory of the electron are formed on the wiring correcting electrode 29, the small spacing of the component high-definition Image forming device, is particularly effective.

In this embodiment, electronic transmitting element and the trajectory of the electron that the relative position between the electrodes, for example, than on the surface of the separator is integrally formed on the trajectory of the electron correction electrode is more accurate.

In this embodiment is, in order to in the manufacturing the Image forming apparatus is in the high vacuum degree, is also configured the necessary minimum number of baffle 28. In other words, the baffle 28 is not disposed on all of the X direction wiring 26 on, and by which is disposed a plurality of electronic transmission part 27 electron emission line of a configuration of the plurality of rows, the trajectory of the electron correcting electrode 29 to clamp the baffle plate 28 and its recent electron emission line configuration

As mentioned above, in accordance with the present invention, the baffle element in the vicinity of the transmitting part of the correcting the trajectory of the electron is formed in the vicinity of the electrode, will be able to correct the deviation of the electron beam caused by electrification baffle. Electron beam in the vicinity of the baffle plate can be realized without changing the position of the high quality of the Image forming apparatus. Even if it is not on the partition also forming a high-resistance film of the deviation of the electron beam can be corrected, but also, the high resistive film is formed on the partition board, the control range can be widened.