Preparation method of europium-doped yttrium borate thin film

The invention discloses a preparation method of a europium-doped yttrium borate thin film. The preparation method comprises the following steps: 1) mixing a water-soluble europium salt, a water-soluble yttrium salt, boric acid, water and an alcohols solvent, and mixing and dissolving the alcohols solvent with water; 2) adding a chelating agent and a cross-linking agent into the mixed system obtained in the step 1); 3) reacting the mixed system obtained in the step 2) for 3-5 hours, and leaving the mixed system subjected to reaction to stand for 24-48 hours; 4) performing film coating in a dipping and pulling manner: immersing a silicon substrate into a beaker with a solution according to a film coating speed of 0.3-0.5 cm/s, then performing standing for 5-10 seconds, and pulling the substrate according to the equal speed, so as to finish film coating; 5) after film coating of the silicon substrate, placing the coated silicon substrate into a muffle furnace, calcining the substrate at 400-600 DEG C for 10-15 minutes, and annealing at 400-1000 DEG C for 1-2 hours, so as to obtain the YBO3:Eu<3+> thin film. The preparation method disclosed by the invention has the advantages that the sol-gel dipping and pulling film coating method for preparing the YBO3:Eu<3+> nanomaterial is simple in equipment, low in cost and low in reaction temperature, and can easily control chemical components.