ELECTROSTATIC CHUCK AND SUBSTRATE PROCESSING DEVICE HAVING SAME
The present invention refers to number of semiconductor device relates to tank, more particularly the resist including the electrostatic chuck and substrate processing device are disclosed. A plurality of semiconductor unit processes generally by number bath 1308. Unit processes are carried out thin film deposition process, lithography process, comprising a photolithography process can be. Thin film deposition process can be performed by mainly plasma etch process. Plasma substrate processing temperature can (treat). Electrostatic chuck positive voltage can be anchored into the substrate at an elevated temperature. The present invention calculates a difference method are provided to reduce the number and if the substrate is heated (extremely minimized temperature distribution) can be a number or a reversed F. [...] including electrostatic chuck and substrate processing device. The present invention refers to electrostatic chuck disclosure as follows. An electrostatic chuck comprises a, base; said base disposed on the dielectric plate; said dielectric plate disposed within the chuck electrode; and said chuck electrode disposed within said device between said dielectric plate number 1 comprises a heater portion. Wherein, the heater fire said number 1: directions number 1 number 1 a plurality of heaters; a plurality of number 1 and disposed between said base and said heater, said heater and said number 1 direction being separated from one another that are each coupled to a plurality of number 1 number 1 can be a plurality of top plate electrodes. According to one example of the present invention includes a substrate processing device, chamber; and said chamber comprising electrostatic chuck the substrate. Wherein, said electrostatic chuck comprises: base; said base disposed on the dielectric plate; said dielectric plate disposed within the chuck electrode; said chuck electrode disposed within said device between said dielectric plate heater can be radiotelephone number 1. The heater fire said number 1: directions number 1 number 1 a plurality of heaters; a plurality of number 1 and disposed between said base and said heater, said heater and said number 1 direction being separated from one another that are each coupled to a plurality of number 1 number 1 can be a plurality of top plate electrodes. According to one example of the present invention of the electrostatic chuck is dielectric plate; said dielectric plate disposed within chuck electrode; electrodes disposed within said chuck of said dielectric plate number 1 plate electrode; said number 1 plate electrode and said chuck electrode said dielectric plate in directions each other said number 1 plate layers having different number 1 are a plurality of heaters; and below said dielectric plate in said plate electrode heaters disposed and overlapping said number 1, directions of said number 1 to number 2 comprises the plate electrode electrically connected with said heater. Heaters of the present invention general outline according to an electrostatic chuck comprises a plate electrodes can be. Plate electrode and each of the heaters can be radially dielectric plate of an azimuth directions. Separate heaters are dielectric plate can be minimized temperature spraying on substrate heating. By using a plate electrodes are electrically connected to the heaters can be minimize the generation of heat line. Figure 1 shows a substrate processing device of the present invention general outline according to 06 surface also are disclosed. Figure 2 shows a cross-sectional drawing of Figure 1 is shown one example of electrostatic chuck are disclosed. Figure 3 shows a disassembled perspective view of Figure 1 show one example of electrostatic chuck are disclosed. Figure 4 shows a plane view of Figure 2 is shown one example of metal base are disclosed. Figure 5 shows a of Figure 2 2001 KIPO one example of a lower heater portion. Figure 6 shows a of Figure 2 2001 KIPO one example of an upper heater portion. Hereinafter, the present invention is embodiment of the present invention belongs to the technical idea in the art person with skill in the art for a jacket for detailed hereinafter, with reference to the attached drawing example of the present invention embodiment to explain less than 1000. The same components may then be dubbed inlater citation using the same reference number. Similar components may then be dubbed inlater citation using similar reference number. The present invention according to be described under test device, performed by the device and method described and to avoid a for example, within a range that the technical idea of the present invention from a heavy variety of changes change is pivotably. Figure 1 of the present invention general outline according to substrate processing device (100) 2001 KIPO. The reference also 1, of the present invention general outline according to substrate processing device (100) is ICP (Inductively Coupled Plasma) comprising etching device can be. Alternatively, substrate processing device (100) includes a CCP (Capacitively Coupled Plasma) etching device, physical vapor deposition device, or can be a chemical vapor deposition device. According to one example, substrate processing device (100) the chamber (10), lift portion (20), a gas supply unit (30), high frequency electrode portion (40), high frequency power supply (50), electrostatic chuck (60), positive voltage supply unit (70) is part number and temperature (80) can be a. Substrate (W) chamber (10) in number ball 1308. Lift portion (20) the chamber (10) and said chamber (10) can be moving substrate in (W). A gas supply unit (30) the chamber (10) in the reactor (16) can be [...] a number. High frequency electrode portion (40) sections (not shown) is using a reaction gas (16) be excite a plasma state. High frequency power supply (50) is a radio frequency electrode portion (40) [...] number can be a high-frequency power. Electrostatic chuck (60) atrough-voltage (W) can be fixed to a substrate. Positive voltage supply unit (70) sealer is coated in the electrostatic chuck voltage (60) can be [...] to number. The part temperature number (80) includes a electrostatic chuck (60) by monitoring the number and be [...]. Chamber (10) is independent from the space external to the substrate (W) can be [...] number. For example, chamber (10) about 10-3 Torr pressure may have. According to one example, chamber (10) at the bottom housing (12) and upper housing (14) can be comprising. The substrate (W) lower housing (12) in 1308. ball number. Upper housing (14) is a lower housing (12) can be disposed on. Lift portion (20) at the bottom housing (12) can be arranged underneath. Lift portion (20) at the bottom housing (12) can be moving. Upper housing (14) is a lower housing (12) can be fixed relative to. Alternatively, a lower housing (12) are secured, upper housing (14) is lift portion (20) can be moved by. According to one example, lift portion (20) to a lift cylinder (22), and lift pins (24) can be comprising. Lift cylinder (22) at the bottom housing (12) capable of over the moves. Alternatively, lift cylinder (22) includes a top housing (14) capable of over the moves. A lower housing (12) is lowered upper housing (14) separated from, substrate (W) (not shown) by robotic arm comprises a lower housing (12) in lift pins (24) on ball number can be disclosed. Lift pins (24) the lower housing (12) moves over the substrate in a (W) capable of lift pins (24) an electrostatic chuck substrate (W) (60) can be settled on an. A lower housing (12) are vertically moved upper housing (14) and prevents the, substrate (W) plasma process can be performed. On completion of the process for preparing number of substrate (W), a lower housing (12) and a descending, lift pins (24) and vertically moving substrate (W) can be. Then, substrate (W) chamber (10) can be discharged to the outside of. A gas supply unit (30) includes a top housing (14) can be connected. For example, a gas supply unit (30) the chamber (10) SF in6 , HF, CH3 , CH4 , Or N2 Reaction gas (16) can be [...] a number. High frequency electrode portion (40) includes a top housing (14) a lower housing (12) can be disposed. According to one example, high frequency electrode portion (40) antenna electrode (42) and bias electrode (44) can be comprising. The antenna electrode (42) an upper housing (14) can be disposed on. Bias electrode (44) is a lower housing (12) electrostatic chuck (60) can be disposed. High frequency power supply (50) the chamber (10) can be located outside. According to one example, the RF power supply (50) comprises a source power supply (52) to bias power supply (54) can be a. Source power supply (52) antenna electrode (42) can be [...] number source RF power. A reaction gas source radio frequency power (16) be excite a plasma state. Bias power supply (54) includes a bias electrode (44) can be [...] bias power to number. Bias sections of plasma state reaction gas (16) can be thereby as well as substrate (W). The substrate (W) by the reactive gas can be processed. For example, etching substrate (W) can be disclosed. Electrostatic chuck (60) the lower housing (12) can be disposed within. Lift pins (24) the lower housing (12) and the bottom of, electrostatic chuck (60) can be passed. Lift pins (24) is fall, electrostatic chuck (60) can be receiving substrate (W). Lift pins (24) are vertically moved when, the electrostatic chuck substrate (W) (60) can be separated from. Positive voltage supply unit (70) is an electrostatic chuck (60) can be connected. For example, positive voltage supply unit (70) degree about ± 2500V and switching voltage electrostatic chuck (60) can be [...] to number. A positive voltage is substrate (W) Johnson [...] effect electrostatic chuck (60) can be permanency. The part temperature number (80) includes a electrostatic chuck (60) can be connected. Temperature sensor (82) is an electrostatic chuck (60) can be disposed within. The part number (80) includes a electrostatic chuck (60) temperature sensor (82) through electrostatic chuck (60) can be detect a temperature. In addition, temperature is part number (80) includes a electrostatic chuck (60) for heating the substrate (W) can be. Figure 3 shows a of Figure 1 and 2 also electrostatic chuck (60) one example of 2001 KIPO. With reference also to the 3 1 also, electrostatic chuck (60) metal base (110), dielectric plate (120), chuck electrode (130), lower ground plate electrode (140), a lower heater unit (150), and upper heater unit (160) can be a. Metal base (110) can be carries an aluminium disk plate. Metal base (110) has a bias electrode (44) can be corresponding. I.e., metal base (110) includes a bias power supply (54) can be connected. Metal base (110) has a plurality of holes (114) may have a. A plurality of holes (114) metal base (110) can be through. A plurality of connectors (112) the holes (114) each in number ball 1308. Connectors (112) metal base (110) to said isolated metal base (110) can be passed through. Connectors (112) metal base (110) on chuck electrode (130), lower ground plate electrode (140), a lower heater unit (150), and an upper heater unit (160) can be connected. For example, connectors (112) dielectric plate (120) in wiring method of electrodes (122) connected to the electrode (130), lower ground plate electrode (140), a lower heater unit (150), and upper heater unit (160) can be connected. The reference 2 also and also 3, dielectric plate (120) the metal base (110) can be disposed on. For example, dielectric plate (120) the metal base (110) can be equal to the diameter of the. Alternatively, dielectric plate (120) has a diameter of metal base (110) smaller than the diameter of thereof can. For example, metal base (110) adhesive number or bolts is the dielectric plate (120) can be coupled to. Dielectric plate (120) carries an aluminium oxide (Al2 O3 ) Of ceramic can. Dielectric plate (120) the cooling gas line holes (124) may have a. Cooling gas line holes (124) (W) (not shown) the substrate cooling gas such as helium can be [...] number below. Substrate (W) cooling gas can be cooled. Dielectric plate (120) and the metal base (110) may have a different thermal expansion coefficients. For example, metal base (110) the thermal expansion coefficient of dielectric plate (120) may be bigger than the coefficients of thermal expansion. Connectors (112) empty contact electrodes (122) by the difference between the coefficient of thermal expansion can be electrically disconnection (disconnected). In addition, connectors (112) can be damaged. Figure 4 shows a of Figure 2 metal base (110) one example of 2001 KIPO. The reference also 4, connectors (112) is mainly metal base (110) a central area (118) can be dense. Metal base (110) refrigerant gas holes (113) the head holes (115) the end region (116) can be primarily. Bias sections connections (terminal, 111) metal base (110) can be centrally disposed of. At least one edge area (116) are in a connector (112) adjacent pins (118) are in a connector (112) than metal base (110) can be breakage of the vulnerable. Central region (118) are in a connector (112) metal base (110) to a radial direction (R) edge region (116) are in a connector (112) shorter than can be moved. The, central region (118) are in a connector (112) metal base (110) on a dielectric plate (120) coefficient of thermal expansion difference according to connectors (112) empty contact electrodes (122) electrical disconnection (disconnection) and connectors (112) can be preventing or reducing damage. The reference 2 also again and also 3, chuck electrode (130) dielectric plate (120) can be disposed within. E.g., chuck electrode (130) can be metal disk. Chuck electrode (130) the diameter of the dielectric plate (120) smaller than the diameter of thereof can. Empty contact electrodes (122) is chuck electrode (130) and connectors (112) can be connected. Lower ground plate electrode (140) is chuck electrode (130) and metal base (110) between the dielectric plate (120) can be disposed within. For example, lower ground plate electrode (140) can be tungsten metal disk. Lower ground plate electrode (140) and a via contact electrodes (122) by connectors (112) can be connected. A lower heater unit (150) includes a chuck electrode (130) and metal base (110) between the dielectric plate (120) can be disposed within. A lower heater unit (150) the diameter of the dielectric plate (120) smaller than the diameter of thereof can. According to one example, a lower heater unit (150) at the bottom heaters (152) and bottom plates electrodes (154) can be comprising. Lower heaters (152) be a macro-shaped heaters in concentric circles. For example, lower heaters (152) can be nickel chromium alloy. Empty contact electrodes (122) the lower heaters (152) and the lower plate electrodes (154) can be connected. Lower plate electrodes (154) the lower heaters (152) and lower ground plate electrode (140) can be disposed between. Empty contact electrodes (122) the lower plate electrodes (154) and connectors (112) can be connected. Empty contact electrodes (122), and bottom plates electrodes (154) connectors (112) and lower heaters (152) can be used as electrical connection between the lines. Empty contact electrodes (122) vertical connecting line and wherein one, lower plate electrodes (154) is be a horizontally connected to the lines. Empty contact electrodes (122), and bottom plates electrodes (154) is can be tungsten. Figure 5 shows a of Figure 2 of a lower heater unit (150) one example of 2001 KIPO. The reference also 5, lower heater unit (150) of the heaters (152) is number 1 to number 4 ring heaters (152a - 152d) can be comprising. Number 1 to number 4 ring heaters (152a - 152d) dielectric plate (120) can be divided into a radial direction (R). Number 1 to number 4 ring heaters (152a - 152d) can each radius increases in sequence. For example, number 1 ring heater (152a) is number 2 ring heater (152b) can be disposed within. Number 2 ring heater (152b) is number 3 ring heater (152c) can be disposed within. Number 3 ring heater (152c) is number 4 ring heater (152d) can be disposed within. Although not shown, number 4 ring heater (152d) located on the other heater ring disposed further disapproval. Lower plate electrodes (154) is number 1 to number 4 ring heaters (152a - 152d) which intersects the directions can be. Lower plate electrodes (154) azimuth directions can be. Lower plate electrodes (154) be a each of the arc plate electrode. For example, lower plate electrodes (154) is separated into two 8 may have arc shape. Lower plate electrodes (154) number 1 of each edge about 45° azimuth (θ1 ) May have a. Number 1 to number 4 lower heaters (152a - 152d) lower plate electrodes of the plurality (154) can be connected. Lower plate electrodes (154) number 1 to number 4 the lower heaters (152a - 152d) can be horizontally connected to minimize electrical heating lines. The reference 2 also again and also 3, upper heater unit (160) at the bottom heaters (152) chuck electrode (130) can be disposed between. Upper heater unit (160) the diameter of the lower heater unit (150) can be equal to the diameter of the. According to one example, upper heater unit (160) includes a top heaters (162), the top grounded plate electrode (164), and a roof plate electrodes (166) can be comprising. The upper heater (162) dielectric plate (120) can be disposed within the edge of. Alternatively, the upper heater (162) dielectric plate (120) located centrally of disapproval. The upper heater (162) the lower heaters (152) can be smaller than micro heater are. The upper heater (162) nickel chromium alloy can be. The top grounded plate electrode (164) upper heaters (162) and lower heaters (152) can be disposed between. The upper heater (162) and a via contact electrodes (122) by the top grounded plate electrode (164) can be commonly connected. Empty contact electrodes (122) is the top grounded plate electrode (164) lower ground plate electrode (140) may be joined to 2000. In addition, empty contact electrodes (122) the lower ground plate electrode (140) and connectors (112) can be-coupled. Top plate electrodes (166) is the top grounded plate electrode (164) and lower heaters (152) can be disposed between. The upper heater (162) and a via contact electrodes (122) the upper plate electrodes (166) can be individually connected. Empty contact electrodes (122) has a top plate electrodes (166) and connectors (112) can be-coupled. Empty contact electrodes (122), lower ground plate electrode (140), the top grounded plate electrode (164), and a roof plate electrodes (166) upper heaters (162) and connectors (112) can be used as electrical connection between the passage. Lower ground plate electrode (140), the top grounded plate electrode (164), and a roof plate electrodes (166) upper heaters (162) can be horizontally connected to minimize electrical heating lines. Figure 6 shows a of Figure 2 upper heater unit (160) one example of 2001 KIPO. 6 also reference surface, the upper heater (162) azimuth directions can be. According to one example, the upper heater (162) each of the outer arc heater (161) and the inner arc heater (163) can be a. External arc heater (161) and the inner arc heater (163) includes a radially (R) can be separated. External arc heaters (161) includes an inner arc heaters (163) can be placed about the. Arc heaters (163) includes an outer arc heaters (161) vertex than (168) can be disposed adjacent to. External arc heater (161) inner arc heater (163) may have plane present a large area. External arc heaters (161) and an inner arc heaters (163) can be arranged in the same way as it is possible. For example, external arc heaters (161) and an inner arc heaters (163) to rear direction about each of the 16 can be. Alternatively, external arc heaters (161) and an inner arc heaters (163) each of the 2n Two can be made. Implementation being nth "n". 6 also reference 2 and also the, external arc heaters (161) and an inner arc heaters (163) (R) a heated substrate (W) capable of radially azimuth directions. The, external arc heaters (161) and an inner arc heaters (163) calculates a difference (W) method are provided to reduce substrate can be heated. The reference also 6, top plate electrodes (166) upper heaters (162) and matched to 1 1 can be disclosed. The upper heater (162) has a top plate electrodes (166) can be confined to the area. For example, upper plate electrodes (166) each of the vertex (168) having arc shape may have. Top plate electrodes (166) azimuth directions can be. According to one example, top plate electrodes (166) each of the outer arc plate electrode (165) and an inner arc plate electrode (167) can be a. External arc plate electrodes (165) and an inner arc plate electrodes (167) azimuth directions can be. External arc plate electrodes (165) and an inner arc plate electrodes (167) is expected can be made possible. For example, external arc plate electrodes (165) and an inner arc plate electrodes (167) can be configured with each of the two about 16. External arc plate electrodes (165) and an inner arc plate electrodes (167) is expected number 2 azimuth (θ2 ) Can be arranged. For example, number 2 azimuth (θ2 ) Is about 22. Implementation being 5°. Alternatively, external arc plate electrodes (165) each azimuth angles is number 2 (θ2 ) And the first half of the, arc plate electrodes (167) each each azimuth angles is number 2 (θ2 ) Be a half. Arc plate electrodes (167) is vertex (168) can be disposed adjacent to. External arc plate electrodes (165) is vertex (168) extends out from the arc plate electrodes (167) can be disposed externally of the at least a portion of. A pair of internal arc plate electrodes (167) includes a pair of outer arc plate electrodes (165) can be disposed between. External arc plate electrodes (165) outer diameter of the inner arc plate electrodes (167) may be bigger than an outside diameter of. External arc plate electrodes (165) includes an inner arc plate electrodes (167) thereof can wider. External arc heaters (161) includes an outer arc plate electrodes (165) can be disposed on. For example, external arc heaters (161) and an outer arc plate electrodes (165) can be overlapping. Arc heaters (163) includes an inner arc plate electrodes (167) can be disposed on. Arc heaters (163) and an inner arc plate electrodes (167) can be overlapping. Alternatively, arc heaters (163) a portion of the outer arc plate electrodes (165) can be disposed on. External arc plate electrodes (165) and an inner arc plate electrodes (167) includes an outer arc heaters (161) and an inner arc heaters (163) can be horizontally connected to reduce electrical heating lines. Although not shown, the upper heater (162) includes an inner arc heaters (163) (not shown) can be further includes in arc heaters. (R) can be divided into arc heaters are the azimuth direction and radially. In addition, top plate electrodes (166) includes an inner arc plate electrodes (167) (not shown) which is disposed inside a arc plate further comprises at least a portion of electrodes can be. Arc plate electrodes azimuth directions can be. Arc heaters are arc plate electrodes can be connected to 1 1. Arc heaters are dielectric plate (120) calculates a difference (W) can be minimized to a substrate heating. Arc plater electrodes are horizontally connected to the line minimizing electrical arc heaters heat can be. Laser diode embodiment examples in drawing and specification been disclosure. The specific terms used but, for the purpose of the present invention is only to explain the previously used in claims of the present invention limiting patent meaning a number range for valve timing used are not correct. The person with skill in the art art therefrom if various deformation and equally to the other embodiment examples will understand enabling. The true range of technical idea of the present invention defined by claims appended patent techniques protection range generated by the will. Disclosed are an electrostatic chuck, and a substrate processing device having the same. The electrostatic chuck comprises: a metal base; a dielectric plate on the metal base; and a heater unit inside the dielectric plate. The heater unit comprises: heaters separated in the azimuth directions; and a plurality of plate electrodes disposed between the heaters and the base and overlapped with the heaters to be separated in the azimuth directions to be connected to each heater. The present invention can heat a substrate at extremely minimized temperature distribution. COPYRIGHT KIPO 2017 Base; said base disposed on the dielectric plate; said dielectric plate disposed within the chuck electrode; and said chuck electrode comprising a heater portion disposed within said device between said dielectric plate number 1, said number 1 heater portion having: a plurality of number 1 number 1 heaters directions; and a plurality of heaters disposed between said base and said number 1, said number 1 direction being separated from one another respectively connected to said plurality of number 1 number 1 upper plate including a plurality of heater electrodes electrostatic chuck. According to Claim 1, each of said number 1 upper plate electrode arc shape having vertices electrostatic chuck. According to Claim 2, upper plate electrode each of said number 1: vertex adjacent to said arc plate electrode; and at least a portion of said plate electrode arranged outside the arc extends out from the vertex said outer arc plate electrode According to Claim 3, said outer arc plate electrode arc plate electrode is expected azimuthally disposed said electrostatic chuck. According to Claim 3, each of the plurality of number 1 said heaters: external arc plate electrode disposed on said outer arc heater; and said plate electrode arc heater including arc disposed on the electrostatic chuck. According to Claim 1, top plate electrodes and said device between said plurality of number 1 number 2 further comprising a heater disposed within said dielectric plate portion, said number 2 the heater fire: number 1 drives a plurality of heaters and said plane, said number 1 number 2 directions direction crossing a number 2 a plurality of heaters; a plurality of number 2 located below said heaters, said lower plate including a plurality of number 1 number 2 coupled to the plurality of heater electrodes electrostatic chuck. According to Claim 6, the azimuth direction and the direction said number 1, number 1 the azimuth direction said plurality of electrodes are separated and said lower plate, said upper plate electrode of a plurality of number 1 number 2 number 1 azimuth greater than azimuth electrostatic chuck. According to Claim 6, a plurality of number 1 upper plate electrode disposed between said heater and said number 1 heater fire and said number 1, the electrostatic chuck further including upper plate electrode commonly connected heaters said number 1 number 2. According to Claim 8, a heater portion and disposed between said base and said number 2, number 2 bottom plate electrode upper plate electrode connected to said number 1 further including electrostatic chuck. According to Claim 1, said base comprising a central region which ball number further outlet, said outlet and said plurality of number 1 between the heater fire said number 1 top plate, said top plate electrodes and said plurality of number 1 and number 1 further including a plurality of empty heaters connected to a plurality of contact electrodes electrostatic chuck.
