단일 구동 모드를 가진 미세기계화 모노리식 3축 자이로스코프

26-09-2017 дата публикации
Номер:
KR1020170108170A
Автор: 아카르 센크
Принадлежит:
Контакты:
Номер заявки: 70-17-102025834
Дата заявки: 18-09-2011

[1]

The present invention refers to gyroscope device relates to search, specifically chemical mechanical gyroscope device to fine are disclosed.

[2]

Several single axis or multi-axial fine chemical mechanical gyroscope structure forming a 3 axis gyroscope system integrated with each other. However separate flows in this cluster size and cost is a specific application will be excessive. Single or multi-axial directions microelectromechanical systems (MEMS: micro-a electro-a mechanical system) on the chip number one can be tank but, each sensor for electronic device require a separate driving and sensing elements.

[3]

In addition, customer/mobile, automobile and aerospace/defense application 3 axis acceleration detection etc. in need. Many single axis or multi-axial fine chemical mechanical accelerometer structure using each acceleration response from the axis in which discrete proof mass (proof-a mass). Several sensor or a plurality of proof mass die (die) on by combining, using an integrated 3 axis accelerometer sensor can be of the size and cost.

[4]

The disclosure of the device layer is x-a y plane defined single proof mass 3 axis gyroscope configured to encapsulating cap wafer and via wafer number [...] substrate. A single central anchor billowed around axis gyroscope has a single proof mass 3 main proof mass moiety, 3 main proof mass portion is arranged in a radial extension towards the edge of the gyroscope sensor axis, in addition 3 from a single central axis gyroscope axis gyroscope has a single proof mass 3 current configured to anchor central and suspension systems which a driving electrode portion formed on the moving parts and stop, with radial moving parts and bonded to the portion, the central driving electrode 3 is moved in a direction normal to the plane axis gyroscope suspension system x-a y z driving around a base shaft consists of vibrating frequency.

[5]

The item number is a number for [...] SUMMARY of the contents of the main patent application, the present invention relayed a number for endured. A detailed description is patent application number additional information [...] substrate.

[6]

The drawing elements are measured and must not, similar references other drawing can be similar indicate an element. In another example of a similar element having different [...] similar references may indicate the disclosed. For example drawing generally relates to various embodiment discussed in the specification for the definition and view hole tastes. Figure 1 shows a 3 also free (3 a-DOF) of inertial measurement unit (IMU) cross-section of coarse exhibits. Figure 2 3 examples of gyroscope axis exhibits. 3 axis gyroscope exhibits examples of driving movement in Figure 3. According to a single proof mass of rotating about an axis in Figure 4 x axis gyroscope including 3 exhibits examples of sensing motion. According to a single proof mass rotating about an axis in Figure 5 y including 3 exhibits examples of sensing motion of axis gyroscope. According to a single proof mass of rotating about an axis in Figure 6 z axis gyroscope including 3 exhibits examples of sensing motion. 7 and 8 is also coupled z axis gyroscope flexure bearing elements exercise and in-phase motion of examples of axis gyroscope including 3 exhibits. Figure 9 shows a 3 axis accelerometer example of also exhibits. Figure 10 shows a 3 axis accelerometer examples of x axis acceleration according to sensing movements also exhibits. Figure 11 shows a 3 axis accelerometer example of y axis acceleration according to sensing movements also exhibits. Figure 12 shows a 3 axis accelerometer example of z axis acceleration according to sensing movements also exhibits. Figure 13 via wafer including system exhibits an example of arrangement of electrodes. Figure 14 shows a side of a single proof mass also exhibits including 3 axis accelerometer. Figure 15 shows a 3 + 3 also free (3 + 3 DOF) inertial measurement unit (IMU) exhibits examples of. Figure 16 examples of anchor ring exhibits a central suspension. Examples of driving movement in central suspension exhibits a portion of Figure 17.

[7]

Cross-axis sensitivity (cross a-axis sensitivity) of the present invention in the embodiment is to minimize the number for each with respect to the axis while effectively answer mode, the angular speed (angular rate) about an axis 3 for detecting both of a single central stationary proof mass (single center non-anchored proof provided mass) is configured to use a monolithic 3 axis gyroscope (micromachined monolithic 3 a-axis gyroscope) S. a number [...] fine the proprietor.

[8]

In one embodiment, of the present invention in the embodiment inherent proof mass segmentation and flexure driving power, single drive mode vibration using 3 axis and angular velocity detecting electrode, the, all with respect to the axis is equal to the loop requires only a drive number. The, as compared to using two separate driving loop 3 of the existing method multi-axial gyroscope, the gyroscope axis by electronic device of the present invention in the embodiment 3 can be significantly the complexity of and cost of number for lengthening.

[9]

In addition, of the present invention in the embodiment includes, for each axis intersecting axis minimizes sensitivity to effectively answer mode while number, 3 around the axis of both operable to detect acceleration using a single central 3 axis accelerometer for chemical mechanical configuration to stationary proof mass number [...] substrate.

[10]

In one embodiment, of the present invention in the embodiment inherent proof mass and flexure structure fixed to the proof mass using a single central axis acceleration detection in accordance with the 3. The, each acceleration with respect to the axis of the existing method compared to separate proof mass using multi-axis accelerometer, of the present invention in the embodiment of a microelectromechanical system (MEMS) sensing element by 3 axis accelerometer and total cost significantly overall die size can be.

[11]

Device structure

[12]

Figure 1 shows a cap wafer also (cap wafer) (10), fine chemical mechanical structure (e.g., fine chemical mechanical 3 a-DOF IMU) having the device layer (device layer) (105), and via wafer (via wafer) (103) including a chip scale package (chip-a scale package) formed in, 3 a-DOF gyroscope or 3 a-DOF 3 fine chemical mechanical accelerometer such as free (3 a-DOF: degrees a-of a-freedom) inertial measurement unit (IMU: inertial measurement unit) (100) of coarse exhibits cross-section. In one embodiment, the device layer (105) is a cap (101) and the via wafer (103) can be disposed between, the device layer (105) and a cap (101) between the cavity can be sealed under vacuum wafer level.

[13]

In one embodiment, a cap (101) the metal bond (metal bond) (102) such as using the device layer (105) can be adhered to. Metal bond (102) formed on the bag-melt bond (non-a high temperature fusion bond) such as melt bond so that, based vacuum and, adhesive coating material applying gravity acceleration (anti-a stiction coating) to low acceleration sensor (low a-g acceleration sensors) which can be the result in preventing adhesive can. In one embodiment, the device layer (105) during operation, metal bond (102) by a cap (101) and the device layer (105) between thermal stress can be generated. In one embodiment, the device layer (105) for fine chemical mechanical structure separated from the thermal stress, the device layer (105) one or more elements of the additional layer can be, for example, one or more stress reducing groove (stress reducing groove) chemical mechanical structure can be formed in the vicinity of the periphery of the fine. In one embodiment, via wafer (103) includes a device layer (105) between the number for a stand-alone thermal stress, the device layer (105) to melt adhesive such as adhesive (e.g., silicon - silicon melt adhesive or the like) can be.

[14]

In one embodiment, via wafer (103) is further provided for example, by using one or more through - silicon via (TSV: through a-silicon provided vias) via wafer (103) one or more isolation regions are separated from other areas of number 1 (107) can be one or more of discrete like comprising, examples and insulating material (109) by means of a via wafer (103) separated from number 1 TSV (108) flow tides. In one embodiment, the at least one of discrete sensing gyroscope axis 3 polishing operation mode (out a-of a-plane operation mode) or can be used as the electrode operating, at least one TSV has a (100) external to the device layer (105) electrical connection from [...] number can be configured. In addition, via wafer (103) includes a contact number 1 (110) can be one or more of a gate, such contact insulating layer (104) using a via wafer (103) one or more portions of selectively be insulated and, via wafer (103) on at least one of discrete or TSV between outer components of one or more ASIC wafer bump, wire bond, or one or more other electrical connection to [...] number consists of using electrical connections.

[15]

In one embodiment, the device layer (105) of 3 degrees of freedom (3 a-DOF) gyroscope or fine chemical mechanical the accelerometer device layer (105) via a wafer (103) of protrusions (protruding portion) adhering to the wafer by patterning (103) can be supported or clamped. Examples of anchor (anchor) projection (106) etc.. In one embodiment, anchor (106) novel via wafer (103) can be located in the centre of, the anchor device layer (105) can be melt adhesive is, thereby, metal fatigue (metal fatigue) number associated with a door number can be a stand-alone.

[16]

Gyroscope device structure

[17]

Figure 2 3 a-DOF IMU (100) of the device layer (105) formed in a single side of such as, 3 axis gyroscope (200) exhibits examples of. In one embodiment, 3 axis gyroscope (200) also shown in the structure of the 2 x and y can be symmetrical about an axis, z axes on general outline drawing out from direction from which are disclosed. Also 2 from 3 axis gyroscope (200) for controlling and features a portion of reference each other. However in one embodiment, this reference and description is 3 axis gyroscope (200) such as the padded portions of drawing code can be applied to portions of the gate electrode.

[18]

In one embodiment, 3 axis gyroscope (200) as in the example of Figure 1, 3 a-DOF IMU (100) of the device layer (105) is patterned, 3 axis gyroscope operating mode can be a single proof mass includes designing [...] number.

[19]

In one embodiment, a single central anchor [e.g., anchor (106)] a single proof mass central suspension (central suspension) (111) center using a suspension 1308. Central suspension is, simultaneous mooring it is in,, its content is aided by the reference herein, such as by application to the disclosure of PCT patent application number US2011052006 Acar 16 September 2011 "FLEXURE BEARING TO REDUCE QUADRATURE FOR RESONATING MICROMACHINED DEVICES" call such as the name implies symmetric comprises central flexure bearing ("flexure"). The central suspension (111) by means of proof mass is x, y and z vibrate and is in torsion about an axis, a number of examples of operating mode gyroscope including 3 hereinafter [...] substrate:

[20]

(1) about an axis in z torsion plane (e.g., also shown in example 3) driving movement (torsional in a-plane drive motion),

[21]

(2) polishing y y axis gyroscope sensing motion about an axis in torsion (torsional out a-of a-plane y a-axis gyroscope sense motion) (e.g., also shown in example 4), and

[22]

(3) y x axis gyroscope sensing motion about an axis in torsion polishing (e.g., also shown in example 5).

[23]

In addition, single proof mass design can be configured into a plurality of sections. Examples thereof, main proof mass portion (115), and y is asymmetrical about an axis x axis proof mass portion (116) the pin is. In one embodiment, driving electrode (123) main proof mass portion (115) of y can be disposed along an axis. Driving electrode (123) is, central suspension (111) in combination with, the driving movement about an axis in torsion plane number [...] z, y x shaft and about an axis in a angular movement (angular motion) can be configured to allow detection of.

[24]

In one embodiment, x axis proof mass portion (116) is z axis gyroscope flexure bearing (120) using a main proof mass portion (115) can be coupled to. In one embodiment, z axis gyroscope flexure bearing (120) by, x axis proof mass portion (116) is a linear direction x z axis gyroscope sensing movement elements vibrate disclosed.

[25]

In addition, 3 axis gyroscope (200) is along an axis x x axis proof mass portion (116) of method for manufacturing single crystal, in phase with the z axis gyroscope sensing electrodes configured to detect (127) can be comprising.

[26]

In one embodiment, driving electrode (123) and z axis gyroscope sensing electrodes (127) each including a movable finger (moving finger) can be. Movable fingers anchor (124, 128) using a predetermined position of each anchor [e.g., via wafer (103)] associated with fixed stop finger set coupled to at least one proof mass portion.

[27]

Gyroscope operating mode

[28]

Figure 3 driving movements 3 axis gyroscope (300) exhibits examples of. In one embodiment, driving electrode (123) is number 1 driving anchor (124) [e.g., via wafer (103) electrically insulated portion and protruding] associated with a desired position using a stationary finger set main proof mass portion (115) can be coupled to a set of movable fingers. In one embodiment, stop fingers number 1 driving anchor (124) can be configured to receive energy through, each other associated driving electrode (123) forward via an interaction between fingers movable finger, a number [...] z a single proof mass angular force (angular force) can be pivoted.

[29]

Embodiment of Figure 3, driving electrode (123) rotate about an axis and has a single proof mass z, central suspension (111) comprises a fixed anchor (106) with respect to the restoring torque by number [...], single proof mass are formed (123) according to the energy applied to the driving frequency oscillating about an axis in plane is equal to z in torsion. In some examples, single proof mass driving movement of electrodes (123) can be detected using.

[30]

X axis rate response

[31]

Figure 4 x according to rotation about an axis to a single proof mass during sensing movement including 3 axis gyroscope (400) exhibits examples of. Single proof mass main proof mass portion (115), x axis proof mass portion (116), and a central suspension (111) comprises.

[32]

X when about an axis in each speed, the disclosure of Figure 3 example 3 axis gyroscope (400) associated with the driving movement of, z axis according to Coriolis force in the direction opposite the x axis proof mass portion (116) can be generated. This velocity vector is in the opposite direction along the axis y therefore are disclosed. The, single proof mass central suspension (111) for increasing bending stiffness about an axis by a y 1308. excited in torsion. Sensing response is e.g., via wafer (103) formed in x axis gyroscope electrode measures are detected by polishing can be, x axis proof mass portion (116) and via wafer (103) can be are detected by capacitive coupling.

[33]

Y axis rate response

[34]

Figure 5 y axis according to sensing movement including 3 a single proof mass during rotation about axis gyroscope (500) exhibits examples of. Single proof mass main proof mass portion (115), x axis proof mass portion (116), and a central suspension (111) comprises.

[35]

Y when about an axis in each speed, the disclosure of Figure 3 example 3 axis gyroscope (400) associated with the driving movement of, z axis according to the Coriolis force in the direction opposite the main proof mass portion (115) can be generated. This velocity vector is in the opposite direction along the axis x therefore are disclosed. The, single proof mass central suspension (111) for increasing bending stiffness by a y 1308. excited in torsion about an axis. Sensing response is e.g., via wafer (103) formed in electrode measures are detected by polishing y axis gyroscope can be, main proof mass portion (115) and via wafer (103) can be are detected by capacitive coupling.

[36]

Z axis rate response

[37]

Figure 6 z axis according to sensing movement including 3 a single proof mass during rotation about axis gyroscope (600) exhibits examples of. Single proof mass main proof mass portion (115), x axis proof mass portion (116), central suspension, z axis flexure bearing (120), and z axis gyroscope coupled flexure bearing (121) comprises.

[38]

When each speed about an axis in z, the disclosure of Figure 3 example 3 axis gyroscope (400) associated with the driving movement of, Coriolis force in the direction opposite the x axis according to x axis proof mass portion (116) can be generated. This velocity vector is in the opposite direction along the axis y therefore are disclosed. The, x axis proof mass portion (116) is z axis flexure bearing (120) in the opposite direction along the axis direction for increasing bending stiffness by a x x be excited linearly. In addition, z axis gyroscope coupled flexure bearing (121) elements is driven directly by the Coriolis force, x axis proof mass portion (116) linear method for manufacturing single crystal resonant modes can be used a number [...] (linear anti-a phase resonant mode). Sensing response is the device layer (105) formed in z axis gyroscope sensing electrodes (127) are detected by a plane parallel plate such as sensing electrodes (in a-plane parallel-a plate sense electrode) can be.

[39]

Figure 8 z axis gyroscope elements exercise and in-phase motion of 7 and also coupled flexure bearing (121) including 3 a axis gyroscope (700) exhibits examples of. X axis acceleration due to 3 axis gyroscope (700) a number of vibration (vibration rejection) in order to improve the wetting ability, z axis gyroscope coupled flexure bearing (121) is x axis proof mass portion (116) to number billion consists of inphase movement.

[40]

Method for manufacturing single crystal movement during (anti-a phase motion), of 2 x axis proof mass portion (116) a z axis gyroscope coupled flexure bearing (121) and a connecting beam (connection beam) applies a force in the same direction and the, low beam stiffness naturally connected in common substrate.

[41]

Alternatively, during in-phase motion (in a-phase motion), z axis gyroscope coupled flexure bearing (121) connected beam connection beam is applied to the opposite movement, the force acting on the connected beam forms a thermal movement in high stiffness are disclosed. The, in-phase movement to increase the rigidity and resonance frequency, vibration number are also resized to be coated.

[42]

Accelerometer device structure

[43]

Figure 9 shows a also 3 a-DOF IMU (100) of the device layer (105) formed on a single side of of 3 axis accelerometer (900) exhibits examples of. In one embodiment, 3 axis accelerometer (900) including a single proof mass design, such as defined in the example of Figure 1, 3 a-DOF IMU (100) of the device layer (105) patterned to 3 axis accelerometer operating mode number [...] substrate.

[44]

In one embodiment, single proof mass response mode for reducing cross-axis sensitivity and the number series of flexure bearing and frame using a single central anchor [e.g., anchor (106)] to a fixed central point suspension can be disclosed. In one embodiment, 3 axis accelerometer (900) is anchor (106) x-axis frame a (135) to bind the x-axis frame (135) is configured to deflect in response to acceleration along an axis x x axis flexure bearing (133) can be comprising. In addition, device x-axis frame (135) a y-axis frame (136) to bind the y-axis frame (136) according to acceleration in response to the y axis x-axis frame (135) configured to biased relative to the y axis flexure bearing (134) can be comprising. In addition y-axis frame device (136) a proof mass (138) configured to remaining number of bonded to the portion z axis flexure bearing (137) comprises. Z axis flexure bearing (137) to function as the torsional hinged (torsional hinge), proof mass has a concave about an axis passing through a center of a central axis of the torsion deflection at the cotton outside in to each other.

[45]

In addition, 3 axis accelerometer (900) is x-axis frame (135) x axis motion of inphase plane (in a-phase in a-plane x-a axis motion) configured to detect the x axis accelerometer sensing electrodes (125) and, y-axis frame (136) configured to detect a quadrature plane y axis motion of the y axis accelerometer sensing electrodes (131) can be comprising. In one embodiment, x axis accelerometer sensing electrodes (125) and y axis accelerometer sensing electrodes (131) each of the anchor (126, 132) using a predetermined position of each anchor [e.g., via wafer (103)] associated with the fixed stop finger set comprising one or more frames movable finger (moving finger) can be bonded to the portion.

[46]

X axis accelerometer response

[47]

Figure 10 shows a 3 axis accelerometer sensing movements also x axis acceleration according to (1000) exhibits examples of. 3 axis accelerometer is single proof mass, anchor (106), x axis flexure bearing (133), and x-axis frame (135) comprises.

[48]

X along its axis when the inner, proof mass, y-axis frame (136) and x-axis frame (135) anchor (106) can move together relative. As a consequence thereof the positions of the proof mass of an opposing x axis accelerometer sensing electrodes (125) detection using which, the differential deflection measurement in accordance with the. In one embodiment, dosage (variable gap capacitor variable region), piezoelectric, piezoresistive type, magnetic or heat a variety of detection method can be used.

[49]

Y axis accelerometer response

[50]

Figure 11 shows a 3 axis accelerometer sensing movements also y axis acceleration according to (1100) exhibits examples of. The 3 axis accelerometer is single proof mass, anchor (106), y axis flexure bearing (134), and y-axis frame (136) comprises.

[51]

Y along its axis when the inner, y-axis frame (136) a x-axis frame (135) y connecting axis flexure bearing (134) is y-axis frame (136) to deflect the electron beam to move along the axis and in proof mass with y, holds a includes a stationary x-axis frame. As a consequence thereof the positions of the proof mass of an opposing y axis accelerometer sensing electrodes (131) detection using which, the differential deflection measurement in accordance with the. In one embodiment, dosage (variable gap capacitor variable region), piezoelectric, piezoresistive type, magnetic or heat a variety of detection method can be used.

[52]

Z axis accelerometer response

[53]

Figure 12 shows a 3 axis accelerometer sensing movements also z axis acceleration according to (1200) exhibits examples of. The 3 axis accelerometer is single proof mass (138), anchor, and z axis flexure bearing (137) comprises.

[54]

In one embodiment of Figure 12, x axis flexure bearing (137) about an axis passing through the center of the beams is proof mass (138) positioned to offset from the center of the substrate. The, mass-unbalance horns, proof mass of moment of inertia than nearby portion located further away from the pivot line because, proof mass (138) z axis acceleration and is sensitive to, torsion pivot line about at the cotton outside in deflecting the other. X axis flexure bearing (133) and y axis flexure bearing (134) having high polishing rigid (high out-of-of a-plane stiffness) designed to. The, these bearing comprises z axis during acceleration holds the stop state.

[55]

Figure 13 via wafer arrangement of electrodes including system (1300) exhibits examples of. In one embodiment, z axis accelerometer electrode (140) is the device layer (105) under a via wafer (103) can be disposed on. Torsional response (torsional response) by only measuring electrode circular polishing can be differentially deflection. In one embodiment, dosage (variable gap capacitor variable region), piezoelectric, piezoresistive type, magnetic or heat a variety of detection method can be used.

[56]

Also Figure 14 shows a single proof mass, an exemplary "pivot", and z axis acceleration electrode (140) and including 3 axis accelerometer (1400) side by a goniophotometer.

[57]

3 + 3 degrees of freedom

[58]

Figure 15 shows a device layer of also IMU (105) be formed in a single side of such as, 3 + 3 degrees of freedom (3 + 3 DOF) inertial measurement unit (IMU) (200) (e.g., 3 axis gyroscope and 3 axis accelerometer) exhibits examples of. In one embodiment, have the same wafer 3 + 3 DOF 3 axis gyroscope (1505) on 3 axis accelerometer (1510) can be a.

[59]

In one embodiment, 3 axis gyroscope (1505) and 3 axis accelerometer (1510) has each of the separate proof mass, even when packaged, end device (e.g., chip scale package) is attached to the cap in sharing, 3 axis gyroscope (1505) and 3 axis accelerometer (1510) can be located in the same cavity. In addition, formed in the same way since the same time device made of a material, which is a deviation of the present invention in the embodiment is significantly higher risk, sensor need individual corrected is inclined, positioning (alignment) decreased number of wisdom, individually rather than to an adjacent device can be arranged closer.

[60]

In addition, associated with the final sealing device to save space other. For example, sealing of a width of 100 um being activated, fluorinated device by reducing the distance between the cap wafer, reducing the overall size end device can be. The individually packaged, twice the necessary space for sealing width is under or over.

[61]

In one embodiment, 100 um die size so that sealing width 2. 48x1. To the 8 mm can be reduce.

[62]

Drive and detection frequency

[63]

In one embodiment, the 20 kHz range of gyroscope sense mode 3 and driving mode can be set. In the case of open loop operation, such as 500 Hz to 100 Hz driving mode by separating mode (mode separation) can be separated from the sense mode. This mode can be determining separation gyroscope mechanical sensitivity. In order to enhance sensitivity, vibration specifications is to allow the application (vibration specifications), gyroscope operation resonant frequency can be reduce. Closed loop sensing operation is complete, increased mechanical sensitivity mode of separation can be reduced.

[64]

Orthogonal error reduction

[65]

Figure 16 anchor (106) are fastened around a central suspension of (111) exhibits examples of. Central suspension (111) orthogonal error (quadrature error) locally cancellation comprises configured to symmetrical "C - beam". Fine chemical mechanical gyroscope orthogonal error occurs in largely DRIE sidewall and each error, thereby straight sidewall from the etching stop profile caused by other. Each sidewall if there is error, the beam along the length of the skew angle by driving movement plane polishing when current to movement can be made. The, driving movement of the distorted compliant beam is opposite the base, as a consequence thereof polishing deflection by a quadrature error occurs in an other.

[66]

Figure 17 driving movement in central suspension (111) examples of part of exhibits. Central suspension (111) anchor (106) a to one side of the symmetrical "C - beam". C - beam for each one of the one side-effects caused by polishing movement may corresponding portions symmetrical to the data body. The, orthogonal error caused in each beam can be locally cancellation.

[67]

In the embodiment additional thresholds and

[68]

In in the embodiment 1, inertial measurement system includes x-a y plane defined single proof mass 3 axis gyroscope (3 a-axis gyroscope single proof-a mass) with which the device layer (device layer), single proof mass 3 axis gyroscope has, around a single central anchor is suspended and, 3 axis gyroscope (radial portion) including a radial portion extending outwardly toward the edge of the main proof mass portion (main proof-a mass section), from a single central axis gyroscope (central suspension system) current is configured to anchor said 3 central suspension system, and a movable portion and a stop portion are formed which (drive electrode), and bonded to the portion with radial moving parts, driving electrode 3 axis gyroscope is moved in a direction normal to the plane central suspension system is x-a y z driven about an axis in response to frequency (drive frequency) to consists of. In addition device layer bonded cap wafer surface axis gyroscope has a single proof mass 3 (cap wafer) number 1, number 2 and device layer bonded to the surface on which the via wafer (via wafer), thereby encapsulating the gyroscope axis consists of cap wafer vias wafer single proof mass 3.

[69]

In in the embodiment 2, in the embodiment 1 (z a-axis angular motion) the z axis angular movement in response to the elements along an axis x (anti-a phase) configured to move symmetrical x axis proof mass portions comprising (proof-a mass sections symmetrical x-a axis) can be.

[70]

In in the embodiment 3, in the embodiment 1 to at least one of the any of 2, x axis proof mass portion bind x axis proof mass between the parts of the in-phase motion (in a-phase motion) configured to interfere with a z axis gyroscope coupled flexure bearing (a z a-axis gyroscope coupling flexure bearing) can be.

[71]

In the embodiment 4 in, at least one of the any of the in the embodiment 1 to 3, and on the cotton outside of the device layer, each rotation (angular rotation) y x axis and means for detecting the rotational axis polishing can be configured to each electrode.

[72]

In in the embodiment 5, in the embodiment 1 to 4 can be located on one or more polishing during wafer via electrode.

[73]

In in the embodiment 6, in the embodiment 1 to 5 more driving electrode is any one of a plurality of sets of still finger (stationary finger) can be a movable finger (moving finger) communicates, via stop fingers can be to wafer.

[74]

In the embodiment 7 in, any of the one or more devices layer is 3 to 6 in the embodiment 1 x-a y axis gyroscope located adjacent to 3 axis accelerometer formed in a plane (3 a-axis accelerometer) can be comprising, 3 cap wafer and via the wafer 3 axis accelerometer and encapsulated in the same cavity axis gyroscope can be configured.

[75]

In in the embodiment 8, 7 in the embodiment 1 to at least one of the one or more layer is formed single proof mass 3 axis accelerometer x-a y plane (single proof-a mass 3 a-axis accelerometer) can be comprising, single proof mass 3 axis accelerometer is around a single central anchor is suspension, single proof mass 3 axis accelerometer may be a separate x, y, and z axis can be flexure bearing, x and y axis flexure bearing is symmetrical about a single central anchor which, z axis flexure bearing is not symmetrical about the single central anchor is divided.

[76]

In the embodiment 9 in, any of the at least one capping agent in the embodiment 1 to 8 3 3 axis gyroscope axis accelerometer and encapsulated in the same cavity via wafer and wafer can be configured.

[77]

In in the embodiment 10, one or more of the accelerometer in the embodiment 1 to 9 3 axis accelerometer sensing electrodes y axis plane x shaft and comprising (in a-plane x and y a-axis accelerometer sense electrode) can be.

[78]

In in the embodiment 11, in the embodiment 1 to 10 shaft and one or more of a single central anchor each other about a plane x y axis accelerometer the sensing electrodes can be symmetric.

[79]

In in the embodiment 12, in the embodiment 1 to 11 3 axis accelerometer is one or more of sensing electrodes comprising polishing z axis accelerometer (out a-of a-plane z a-axis accelerometer sense electrode) can be.

[80]

In the embodiment 13 in, one or more of 12 in the embodiment 1 to 3 axis accelerometer is longer than about an axis or axes x y z axis can be rectangular shape.

[81]

In in the embodiment 14, 13 in the embodiment 1 to one or more of x, y, and z axis flexure bearing high polishing may have a rigid (out a-of a-plane stiffness).

[82]

In in the embodiment 15, in the embodiment 1 to 14 x and y axis accelerometer sensing electrodes and one or more of a single proof mass plane x, y, and z axis flexure bearing surrounding a outer (outer portion) can be.

[83]

In the embodiment 16 in, the device layer is formed of fine chemical mechanical monolithic inertial sensor device x-a y plane axis gyroscope which single proof mass 3, single proof mass 3 axis gyroscope has, around a single central anchor is suspended, the gyroscope axis toward a radial extension portion formed on the edge portion 3 main proof mass portion, anchor 3 from a single central axis gyroscope central suspension system is configured to current, and a movable portion having a driving electrode at still portions which, with radial moving parts and bonded to the portion, the central driving electrode 3 is moved in a direction normal to the plane axis gyroscope suspension system x-a y z driven about an axis and consists of vibrating frequency.

[84]

In the embodiment 17 in, any of angular movement in response to at least one of the z axis in the embodiment 1 to 16 x elements along an axis configured to move symmetrical x can be axis proof mass portion.

[85]

In in the embodiment 18, in the embodiment 1 to 17 around a single central axis gyroscope to at least one of the any of the anchor adjacent device layer 3 billowed x-a y plane formed, separate x, y, and z axis flexure bearing having a single proof mass 3 axis accelerometer can be comprising, x y axis flexure bearing is symmetrical about a single central shaft and which anchor, said symmetrical about a single central anchor z axis flexure bearing is not disclosed.

[86]

In in the embodiment 19, 18 in the embodiment 1 to one or more of a single central plane 3 axis accelerometer is symmetrical about the axis accelerometer sensing electrodes and at least two anchor shaft and x y, z axis accelerometer sensing electrode polishing can be.

[87]

In the embodiment 20 in, at least one of the device layer bonded cap wafer surface 19 in the embodiment 1 to any of number 1, number 2 and device layer can be bonded to the surface on wafer formed on a via, the wafer cap wafer vias 3 axis gyroscope and 3 axis accelerometer can be configured to encapsulated in the same cavity.

[88]

In the embodiment 21 in, system or device is, at least one of the emitting diode or in the embodiment 1 - 20, in the embodiment 1 - 20 for performing functions of any one of means, or when performed by the machine, causes the machine to read the data of one of them in the embodiment 1 - 20 an instruction to include a computer readable medium including machine readable, in the embodiment 1 - 20 or a combination of any part of any part of one of the can.

[89]

Detailed description is appended drawing forming part of the description comprises a description is given. The drawing, as such a, can the present invention refers to embodiment exhibits particular disclosure in the embodiment. In the embodiment referred to here "embodiment form" or "example" them to each other. The specification mentioned all Official Gazette, patent, and patent document included in the specification by individually by the citation, the entire contents of the specification by citation to multiple myelomas are included. The specification contained by said synthesized on use in mismatch between when the citation, citation included in the configuration of the specification and can be considered as a portion of the supplement. For the use of a compatible (or configuration) is first applied to the substrate without contradiction specification.

[90]

In the specification, the term "one", as if it were common patent document, "at least one" or "one or more" or in other cases simplifies or one or two or more are used for independent. In the specification, the term "or" was a non-limiting, i.e. not specified otherwise, "A or B" is "A rather than B", "A rather than B", and "A and B" are used to indicate the. The preface is used in the claims the term "including (including)" and "(wherein) wherein" negative "including" English equivalent is a graphical representation of each term (comprising) and are used as "where (wherein)". In addition, in claim below, that the term "including" a second number one or hypermetropia, i.e., in terms other than elements listed in claim front including system, device, article, or process that fall within that still claim equal to the other. In addition, claim below in "number 1", "number 2", and "number 3" and like terms used as label only, the numerical requirements are not correct for adding a subject.

[91]

To explain the substrate and, adjacent frames are not correct. For example, the aforementioned examples (or one or its sides) can be used in combination with each other. For example regarding the corresponding substrate by said is one skilled in the art, can be using other in the embodiment. 37 C designates a abstract. F. R, §1. 72 (b) readers disclosure techniques according to indicate the number ball for rapidly content encoded. Abstract of claim designates a scope or meaning not used to interpret or limit based on encoded number defining base will understand. In addition, said detailed description, various features are grouped together in groups to simplify the disclosure content can be. This is not an essential feature claimed disclosure treatment for all claim interpreted meaning that don't substrate. Rather, in the embodiment of the invention has all the characteristics of a particular disclosure within content can be disclosed. Thus, the following claim is, in itself with each claim based on individual in the embodiment, the invention embodiment included for specific content, such in the embodiment are various combinations or permutation can be combined with one another. Claim of full range with a displaceable range of the present invention, with reference to the appended claim should be established.

[92]

The application to the application by the 18 September 2010 Acar "MICROMACHINED MONOLITHIC 3 provided AXIS GYROSCOPE WITH SINGLE DRIVE" America is patent application 61/384 name implies, 245 call (management number: 2921. 100PRV) on, to the application by 18 September 2010 Acar "MICROMACHINED 3 a-AXIS ACCELEROMETER WITH A SINGLE PROOF-a MASS" America is patent application 61/384 name implies, 246 (management number: 2921. 101PRV) for displaying call priority and, aided by the reference herein to about their respective contents.

[93]

The application by the application to the 3 August 2010 Acar "MICROMACHINED GYROSCOPE DEVICES" patent application 12/849 America name implies, call 742, 3 August 2010 by application to the Marx "MICROMACHINED DEVICES AND FABRICATING THE SAME" patent application 12/849 America name implies, associated with call 787 and, aided by the reference herein to about content.



[94]

This document discusses, among other things, a cap wafer and a via wafer configured to encapsulate a single proof-mass 3-axis gyroscope formed in an x-y plane of a device layer. The single proof-mass 3-axis gyroscope can include a main proof-mass section suspended about a single, central anchor, the main proof-mass section including a radial portion extending outward towards an edge of the 3-axis gyroscope sensor, a central suspension system configured to suspend the 3-axis gyroscope from the single, central anchor, and a drive electrode including a moving portion and a stationary portion, the moving portion coupled to the radial portion, wherein the drive electrode and the central suspension system are configured to oscillate the 3-axis gyroscope about a z-axis normal to the x-y plane at a drive frequency.



Inertial measurement system, comprising a device layer, said device layer is: The device layer of a single proof mass formed x-a y plane including 3 axis gyroscope; and Said 3 axis gyroscope to said adjacent device layer of a single proof mass formed including 3 axis accelerometer and x-a y plane, said 3 axis gyroscope has, around a single central gyroscope axis gyroscope single proof mass is configured to anchor said 3 and current central suspension, said 3 axis accelerometer, said 3 around a single central axis accelerometer anchor configured to separate a single proof mass acceleration current x axis, y z axis flexure bearing shaft and including, inertial measurement system.

According to Claim 1, said inertial measurement system includes: number 1 surface of said device layer bonded cap wafer; and said device layer bonded to the surface on which number 2 via wafer, said wafer and said cap wafer via said 3 axis accelerometer and said 3 encapsulated in the same cavity axis gyroscope compound is configured, inertial measurement system.

According to Claim 1, said inertial measurement system, and wafer formed on a surface of said device layer via adhesive around, said 3 axis gyroscope and a single proof mass of said anchor and said single central 3 axis accelerometer a single central gyroscope accelerometer anchors secured to said via wafer, inertial measurement system.

According to Claim 1, comprising a driving electrode portion formed on the 3 axis gyroscope is still moving parts, said moving parts said 3 the gyroscope single proof mass coupled to the shaft, said driving electrode and said 3 axis gyroscope is moved in a direction normal to the plane z x-a y said central suspension is driven about an axis and configured to vibrate at a frequency, inertial measurement system.

According to Claim 1, said x y axis flexure bearing is symmetrical about the shaft and a single central anchor and said accelerometer is divided, said z axis flexure bearing is symmetrical about the accelerometer is not a single central anchor is divided, inertial measurement system.

According to Claim 1, said 3 axis gyroscope single proof mass, z axis angular movement in response to the elements configured to move along an axis x x-a y plane symmetrical x axis proof mass portions including, inertial measurement system.

According to Claim 6, said 3 axis gyroscope single proof mass, said x axis proof mass portions is combining said x axis proof mass between the parts of the in-phase rotation axis gyroscope coupled flexure bearing configured to z including, inertial measurement system.

According to Claim 1, said inertial measurement system is adhered to the surface of said device wafer comprising a via, said via wafer: In the device layer of said polishing, said 3 axis of the gyroscope axis for each rotation and means for detecting the rotational axis configured to each single proof mass x y x shaft and y axis gyroscope sensing electrodes; and In the device layer of said polishing, said 3 axis accelerometer configured to detect acceleration z axis of single proof mass of the z axis accelerometer sensing pixel electrode, said device layer is: Said device layer plane, said 3 axis accelerometer configured to detect acceleration of single proof mass of x y y x shaft and shaft and the shaft axis accelerometer sensing electrodes; and Said device layer plane, each of said 3 axis z z axis gyroscope configured to means for detecting the rotational axis gyroscope single proof mass electrode measures including, inertial measurement system.

Inertial measurement system, device layer; said device layer bonded cap wafer number 1 surface; and said device layer bonded to the surface on number 2 via fabrication cost of the apparatus, said device layer is: The device layer of a single proof mass formed x-a y plane including 3 axis gyroscope; Said 3 axis gyroscope to said adjacent device layer of a single proof mass formed including 3 axis accelerometer which x-a y plane, said 3 axis gyroscope has, around a single central gyroscope axis gyroscope single proof mass is configured to anchor said 3 and current central suspension, said 3 axis accelerometer, said 3 around a single central axis accelerometer anchor configured to separate a single proof mass acceleration current x axis, y z axis flexure bearing and shaft and, said cap wafer and said cavity via said 3 axis accelerometer and said 3 axis gyroscope configured to encapsulated in the same wafer compound is, inertial measurement system.

According to Claim 9, via said device layer of number 2 attached to a periphery of a face of said wafer, said 3 axis gyroscope and a single proof mass of said anchor and said single central 3 axis accelerometer a single central gyroscope accelerometer anchors secured to said via wafer, inertial measurement system.

According to Claim 9, said 3 axis gyroscope single proof mass, z axis angular movement in response to the elements configured to move along an axis x x-a y plane symmetrical x axis proof mass portions including, inertial measurement system.

According to Claim 11, said 3 axis gyroscope single proof mass, said x axis proof mass portions is combining said x axis proof mass between the parts of the in-phase rotation axis gyroscope coupled flexure bearing configured to z including, inertial measurement system.

According to Claim 9, said inertial measurement system is adhered to the surface of said device wafer comprising a via, said via wafer: In the device layer of said polishing, said 3 axis of the gyroscope axis for each rotation and means for detecting the rotational axis configured to each single proof mass x y x shaft and y axis gyroscope sensing electrodes; and In the device layer of said polishing, said 3 axis accelerometer configured to detect acceleration z axis of single proof mass of the z axis accelerometer sensing pixel electrode, said device layer is: Said device layer plane, said 3 axis accelerometer configured to detect acceleration of single proof mass of x y y x shaft and shaft and the shaft axis accelerometer sensing electrodes; and Said device layer plane, each of said 3 axis z z axis gyroscope configured to means for detecting the rotational axis gyroscope single proof mass electrode measures including, inertial measurement system.

According to Claim 9, said 3 axis gyroscope is still moving parts comprising a driving electrode portions, said moving parts is the gyroscope single proof mass coupled to said 3 axis, said driving electrode and said axis gyroscope is moved in a direction normal to the plane z x-a y said 3 central suspension is driven about an axis and configured to vibrate at a frequency, inertial measurement system.

According to Claim 9, said x y axis flexure bearing is symmetrical about the shaft and a single central anchor and said accelerometer is divided, said z axis flexure bearing is symmetrical about the accelerometer is not a single central anchor is divided, inertial measurement system.

According to Claim 9, said 3 axis gyroscope single proof mass, z axis angular movement in response to the elements configured to move along an axis x x-a y plane symmetrical x axis proof mass portions including, inertial measurement system.

Inertial measurement system, device layer; said device layer bonded cap wafer number 1 surface; and said device layer bonded to the surface on number 2 via fabrication cost of the apparatus, said device layer is: The device layer of a single proof mass formed x-a y plane including 3 axis gyroscope; Said 3 axis gyroscope to said adjacent device layer of a single proof mass formed including 3 axis accelerometer which x-a y plane, said cap wafer and said encapsulating said 3 axis accelerometer and said 3 via the wafer cavity is configured to same axis gyroscope, inertial measurement system.

According to Claim 17, gyroscope comprises said 3 axis, the gyroscope axis said 3 around a single central gyroscope anchor is configured to and a single proof mass current central suspension, said 3 axis accelerometer, a single central anchor around said 3 axis accelerometer configured to separate a single proof mass acceleration current x axis, y z axis flexure bearing shaft and including, inertial measurement system.

According to Claim 18, via said device layer of number 2 attached to a periphery of a face of said wafer, said 3 axis gyroscope and a single proof mass of said anchor and said single central 3 axis accelerometer a single central gyroscope accelerometer anchors secured to said via wafer, inertial measurement system.

According to Claim 17, said 3 axis gyroscope single proof mass: z axis angular movement in response to the elements configured to move along an axis x x-a y plane symmetrical x axis proof mass portions; and said x axis proof mass portions is combining said x axis proof mass between the parts of the in-phase rotation axis gyroscope coupled flexure bearing configured to z including, inertial measurement system.