PHASE INVERSION BLANK MASK FOR FLAT PANEL DISPLAYS, PHOTOMASK, AND PRODUCTION METHOD THEREOF

In hereinafter, with reference to the drawing of the present invention in the embodiment described specifically but through the present invention, in the embodiment of the present invention is employed for the purposes of example and description only has meaning not limiting of the present invention claim in a number range for valve timing used are not correct. Thus, in the embodiment of the present invention if in the art person with skill in the art from various deformation and equally to the other in the embodiment is enabling understand it will rain. The, scope of protection of the present invention is true given technical identity defined by claim will be.

Hereinafter, forms of the present invention embodiment implemented in liquid crystal display device (LCD) FPD (Flat Panel Display) of phase shift blank mask and photo mask, plasma display panel (PDP), organic light emitting diode (OLED) high pressure liquid coolant like article including FPD for phase shift blank mask and photo mask number number are disclosed. In addition, in the present invention exposure storehouse i a-line (365 nm), h a-line (405 nm), g a-line (436 nm) including one or more is referred to and, preferably, i a-line (365 nm), h a-line (405 nm), g a-line (436 nm) wavelength composite including both refer to.

Figure 1 shows a form of the present invention number 1 embodiment also according to phase shift blank mask (100) shown is a cross-sectional drawing, according to the form shown in Figure 2 of the present invention embodiment phase reversal screen are disclosed.

The reference also 1, according to an embodiment of the present invention phase shift blank mask (100) includes a transparent substrate (102) has a phase shift (104) and a resist film (108) sequentially stacked structure.

Transparent substrate (102) is at least 300 mm and the side of a transparent substrate, a synthetic quartz glass, a soda lime glass substrate, alkali-free glass substrate or low thermal expansion glass substrate have diameters less than 2000.

Phase shift (104) at least 2 at least one layer of thin (104a, .. 104n) has a structure formed by a, preferably, 2 to 10 layer layer, more preferably, 2 to 8 in terms of a dielectric thin film layer laminated layer.

Films (104a, .. 104n) has a form which continuous film or multilayer film, each thin (104a, .. 104n) single film or continuous film shape. Wherein, said continuous film in the reactive sputtering process gas plasma is sensed, power, pressure changing process variables such as polish the ID and password.

Phase shift (104) in each of the films (104a, .. 104n) is expected as the etching solution is composed of a material and dry-etched, has a composition different from each other, said layers of each thin (104a, .. 104n) and laminating at least 1 or more times, different film composition has a different etch rate.

Phase shift (104) has a thickness of 500 Å ∼ 1,500 Å total, each thin (104a, .. 104n) is a thickness of 50 Å ∼ 1,450 Å. Each thin (104a, .. 104n) has a thickness of, for example, may be the same or different each other, transparent substrate (102) can be placed from the gradually increasing or decreasing, specific portions may be thicker than other parts such as etching and optical properties such as according to the characteristics required for tube can be.

Phase shift (104) constituting films (104a, .. 104n) is, chromium (Cr), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), [...] (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), namely (Se), copper (Cu), yttrium (Y), sulfur (S), indium (In), tin (Sn), boron (B), beryllium (Be), sodium (Na), tantalum (Ta), hafnium (Hf), niobium (Nb), silicon (Si) formed compound including one or more metal materials. In addition phase shift (104) constituting films (104a, .. 104n) said material is nitrogen (N), oxygen (O), can be further comprises at least one of carbon (C).

Phase shift (104) constituting films (104a, .. 104n) is, preferably, chromium (Cr) and compound, Cr, CrN, CrC, CrO, CrCN, CrON, CrCO, CrCON films one combustion chamber. To this end, thin (104a, .. 104n) N the₂ , NO, N₂ O, NO₂ , O₂ , C_x H_y (X, y is natural number), CO₂ , At least one reactive gas sputtering process CO gas formed.

Phase shift (104) constituting films (104a, .. 104n) phase shift can become so steep slope is an edge portion of a substrate is preferably a flat cross-section, to this end, thin (104a, .. 104n) content of carbon (C) included in a boundary region of changing method can control the rate of etching. Wherein, thin (104a, .. 104n) carbon (C) is included in said content database engine can be relatively slow.

The, phase shift (104) each thin (104a, .. 104n) different carbon (C) content and, based on the content of carbon (C) covered by the phase shift films in a variety of sequences (104) can be cross-sectional shapes of pattern control.

Phase shift (104) is, preferably, thin (104a, .. 104n) top of thin film (104a) carbon (C) content placed on carbon (C) content is highest and at the upper and low etching rate slow down by a phase shift placed (104) cross-sectional shapes of a constellation pattern can be formed. In addition, phase shift (104) is, for example, top thin film (104a), second layer thin film 3 (104c), second layer thin film 2 (104b) order content of carbon (C) possessing said engine order set, appropriate cross-sectional shapes of a constellation pattern thickness can be formed. And, second layer thin film 3 (104c), top thin film (104a) 2 and a second thin film (104b) in the order of said order by setting a content of carbon (C) possessing an etch rate, thickness of said thin cross-sectional shape forming a constellation can be appropriate.

Films (104a, .. 104n) content of carbon (C) etching rate of which varies, this, sputtering film forming process of a reactive gas including carbon (C) injected through doping concentration can be adjusted by the change. Said reactive gas is a reactive gas including carbon (C) and any gas including a carbon (C) there also, preferably, CH₄ , CO₂ , CO, CxHy (x, y is natural number) regulating the content of carbon (C) one or more gas gas eliminating the clearance as follows.

In addition, films (104a, .. 104n) for sputtering film-forming process, the aforementioned reactive gas injected with engine control for regulating the concentration of inert gas can be. I.e., films (104a, .. 104n) (Ar) argon, helium (He), using at least one of an inert gas and forming a non-number (Xe) gas, top films (104) of the centrally located by reducing the clearance of the inert gas in the formation of the pattern, phase shift inclination cross-section can be improved.

In addition, phase shift (104) constituting films (104a, .. 104n) a thin film of at least one of form a transfer pattern for the wafer, oxygen (O) to adjust the reflectance can be. Wherein, thin (104a, .. 104n) oxygen (O) is included in said content database can be relatively reduce reflectance. Phase shift (104) is thin (104a, .. 104n) top of thin film (104a) oxygen (O) preferably possess the highest a flat, top thin film (104a) content of oxygen (O) can be formed so as to centrally located.

Phase shift (104) including the composite wavelength phase difference 160° ∼ 200° i line has translucency to exposure to g line, this phase shift (104) exposure with storehouse passing through a transparent substrate (102) phase difference of exposure light passing through said substrate. In addition, phase shift (104) said 40° hereinafter translucency to exposure is, preferably, a phase difference deviation 20° hereinafter. Since other exposure light the extracted phase difference, the phase difference of the exposure light to reduce variations preferably. When the uniformity of multi-wavelengths i provided Line, h a-Line, either g-a Line 180° as such a phase difference shift film translucency to exposure not design door number are disclosed.

Phase shift (104) including multi-wavelengths of the translucency to exposure to g line i line 1% ∼ 30%, preferably, 1% to 15% has a luminous transmittance of, said 10% hereinafter translucency to exposure, preferably, 5% hereinafter has transmittance of deviation. Wherein, the aforementioned variation of optical properties including multi-wavelengths to g line line i translucency to exposure difference refer to an item that is a maximum value.

Phase shift (104) including multi-wavelengths of the translucency to exposure to g line 20% hereinafter i line reflection.

Laser diode, the present invention refers to phase shift (104) in each of the films (104a, .. 104n) adjust etching rate of patterning of a special cross-section boundary phase shift according to steep slope of a finer transcription patterns according to an edge portion of a hole formed on one disclosed.

Figure 3 shows a form of phase shift photomask of the present invention number 1 embodiment shown and also according to FPD cross-sectional drawing, Figure 4 of the present invention embodiment shown in cross-section in the form according to phase shift are disclosed.

The reference also 3 and 4, of the present invention embodiment form according to phase shift photo mask (300) are patterned to form a resist pattern is formed on the aforementioned of Figure 1 is resist, resist pattern by etching phase shift the phase reversal screen (104p) method number can be forming the high pressure liquid coolant.

Phase shift (104p) the lower edge of the top edge of the horizontal distance (Tail Size: d) adjusting a 100 nm hereinafter can be, preferably top edge of the lower edge of a horizontal distance (d) can be adjusted to 50 nm hereinafter. In addition phase shift (104p) the top surface of the edge in a single face or phase shift (104p) upper surface of 70 degrees to 110 degrees angle section edge constituting each membrane patterns, more preferably, 80 to 100 degrees angles also.

Figure 5 shows a form of the present invention number 2 embodiment according to phase shift blank mask is also shown cross-sectional drawing, Figure 6 of the present invention number 3 embodiment form according to phase shift blank mask shown cross-sectional are disclosed.

5 and 6 may also reference surface, the present invention according to FPD for phase shift blank mask (200) includes a phase shift (104) film top or the bottom of the mobile phone (106) can be further.

Function film (106) may be the shielding film, the, light shielding film to prevent reflection by the immunochromatography function and having both the same construction and composition may have a single layer or light blocking film comprising different configurations and at the same time can be. Also in form of a phase shift film to have a cross-section perpendicular pattern shape shielding film etching rate adjustable 2 can be at least one layer of multi-layer films or continuous membrane.

Function film (106) chromium (Cr), aluminum (Al), cobalt (Co), tungsten (W), hafnium (Mo) to grade molybdenite concentrates, vanadium (V), palladium (Pd), titanium (Ti), [...] (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), namely (Se), copper (Cu), yttrium (Y), sulfur (S), indium (In), tin (Sn), boron (B), beryllium (Be), sodium (Na), tantalum (Ta), hafnium (Hf), niobium (Nb), silicon (Si) or one or more of said materials containing a nitrogen (N), oxygen (O), at least one of carbon (C) than can be formed.

Function film (106) the phase shift (104) may be sintered material being etched by the same etching solution has an etching selectivity ratio can be formed. Film function (106) and phase shift (104) is, preferably, can be a stand-alone number is patterned etching, etching material and etching method using a number of material and can be publicly known conventional method.

Function film (106) has a thickness of 150 nm hereinafter to composite wavelength optical density (Optical Density) securing, preferably a thickness of 110 nm hereinafter.

Phase shift (104) and function film (106) chemical vacuum deposition (Chemical Vapor Deposition) method, physical vacuum deposition (Physical Vapor Deposition) method, electron beam deposition, laser deposition method, such as ALD can be formed by, specifically a third physical vacuum deposition (Physical Vapor Deposition) product in a legal entity by sputtering preferably.

In addition, function film (106) said in addition to the shielding film the transflector, etch stop layer, hard mask main, FPD number of phase shift in the quartz and high pressure liquid coolant, can be using the same phase shift photo mask.

In the form of the present invention embodiment according to FPD of phase shift photomask on a transparent substrate and a resist film phase shift, or, phase shift, after resist film film-forming and function are sequentially formed, the patterning method number can be high pressure liquid coolant.

Laser diode, constituting the present invention refers to phase reversal screen thin carbon (C) regulating the content of one or more thin layer constituting the phase reversal screen 2 by regulating the speed of the mask, a special cross-section an edge portion of the boundary to correct the inclination portion is capable of forming more constellation pattern causes.

For phase shift blank mask according to an embodiment of the present invention FPD hereinafter detailed in respect to other.

(In the embodiment)

Phase shift Formed according to transmittance and the phase shift quantity evaluating

A transparent substrate has a phase reversal screen according to an embodiment of the present invention FPD for phase shift blank mask layer 2 to 5 layer semiconductor device is provided, comparison phase reversal screen side walls interconnected heat treatment was assessed. In addition, in 2 to 5 of the present invention in the embodiment phase reversal screen layer formed on the semiconductor substrate but, according to the method of structure and at least one layer or continuous film form can be implementing as number 6.

Phase reversal screen side according to an embodiment of the present invention is 300 mm or more chromium (Cr) on a transparent substrate and target, and inactive gases are Ar gas, reactive gases are N₂ , CO₂ , CH₄ Phase reversal screen using sputtering method weight percent.

The, improved shift film in the embodiment 1 to 4 is inclined cross-section is formed on the bottom to the top of carbon (C) and an amount of injection, i.e., CH₄ To facilitate the clearance of the highest, an upper or lower the films are carbon (C) injecting repeatedly several layers of carbon (C) increasing an amount of injection are increasing weight percent.

In the embodiment 5 is a Ar gas to inert gas decreases from a underlying layer, a transparent conductive layer controlling the content of carbon (C), in the embodiment 6 N in₂ Content is increased, the content of carbon (C) can be regulated.

Comparison example 1 a phase reversal screen surface in a single layer film of the CrCON, comparison example 2 of the centrally located at the bottom layer of multilayer phase reversal screen method and an amount of injection carbon (C) increasing weight percent.

Number 1 to 6 of the present invention in the embodiment 1 according to the below table 6 shift film forming conditions and properties etc. multilayered phase produced therewith.

Example 7 and 8 below table 1 and 2 compared to the shift film forming conditions and properties etc. the number produced therewith.

Table 1 with reference to the 6, 5 of the present invention in the embodiment 1 to 6 according to the thickness of 365 nm wavelength phase reversal screen 136 nm ∼ 141 nm translucency to exposure. 97% ∼ 6. 03% 177° ∼ 182° crystal has a phase shift of phase shift amount available characteristics and viscoelasticity.

In addition, 7 and 8 the reference table, the thickness of 365 nm wavelength phase reversal screen 136 nm ∼ 138 nm according to comparison example 5 translucency to exposure. 95% ∼ 6. 01% 178° ∼ 179° crystal display device of the present invention in the embodiment has a phase shift amount of available properties on similarly phase shift and viscoelasticity.

According to examples of the present invention in the embodiment described above are compared with each multilayer thin film forming a resist film on phase shift and formed patterned by a photolithography process, each phase shift his cross-sectional shape. The lower edge of the top edge of the phase shift pattern has a trapezoidal shape of a SEM (Scanning Electron Microscope) was assessed by measuring the horizontal distance (Tail Size: d).

Referencing the table 9, of the present invention in the embodiment according to phase shift are 100 nm hereinafter edge cross-section horizontal distance, more preferably 50 nm hereinafter distance satisfies the boundary patterned by clear are manufactured by a fine pattern has been confirmed.

However, comparison example 1 and 2 according to phase shift the phase shift boundary edge cross-section horizontal distance at least 100 nm beam to borderline formate, in particular, in the case of comparison example 2, the lower layer upper layer carbon (C) on which the disk is extremely fine pattern has been confirmed by horizontal distance increases to impossible.

Or more, but most preferred embodiment through a browser using the present invention, technical range of the present invention, a range said in the embodiment is not limited. Applying said in the embodiment it is possible to various modification or improvements corresponding typical techniques for user can be art hereinafter if it will rain. Such modification or improvements added aspect of the technical range of the present invention can be in the range of from the substrate patent claimed that a special disclosed.