Wafer treatment for achieving defect-free self-assembled monolayers

01-02-2019 дата публикации

Номер:

TW0201905971A

Автор: 柯常, 周磊, 劉彪, 潘鋮, 郭淵泓, 立其吳, 麥可Ｓ傑克森, 魯多維葛迪, 托賓高夫曼歐斯柏恩, 伊宗陳, 伯方馬, KE CHANG, ZHOU LEI, LIU BIAO, PAN CHENG, GUO YUAN-HONG, WU LIQI, JACKSON MICHAEL S, GODET LUDOVIC, KAUFMAN-OSBORN TOBIN, CHEN ERICA, MA PAUL F, KE, CHANG, ZHOU, LEI, LIU, BIAO, PAN, CHENG, GUO, YUAN-HONG, WU, LIQI, JACKSON, MICHAEL S., GODET, LUDOVIC, KAUFMAN-OSBORN, TOBIN, CHEN, ERICA, MA, PAUL F.

Принадлежит: 美商應用材料股份有限公司

Контакты:

Номер заявки: 44-19-10712

Дата заявки: 06-06-2018

Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/020 H01L21/0205 H01L21/02057 H01L21/0206 H01L21/021 H01L21/0218 H01L21/02181 H01L21/022 H01L21/0226 H01L21/02266 H01L21/0227 H01L21/02274 H01L21/0228 H01L21/023 H01L21/0233 H01L21/02334 H01L21/027 H01L21/0271 H01L21/3 H01L21/31 H01L21/310 H01L21/3105 H01L21/32 H01L21/6 H01L21/67 H01L21/672 H01L21/6720 H01L21/67207 H01L21/68 H01L21/683 H01L21/6831

IPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/2 H01L21/20 H01L21/205