Dual gate metal-oxide-semiconductor field-effect transistor

10-03-2020 дата публикации

Номер:

US10586865B2

Автор: Alexander Barr, Christian Larsen, Justin Dougherty, Marc L. Tarabbia, Scott Warrick, YING Ying

Принадлежит: Cirrus Logic Inc

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

G G0 G06 G06F G06F3 G06F30 G06F30/G06F30/3 G06F30/30 G06F30/32 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/7 H01L21/76 H01L21/761 H01L21/762 H01L21/7622 H01L21/76224 H01L21/8 H01L21/82 H01L21/823 H01L21/8238 H01L21/82384 H01L21/823842 H01L29 H01L29/H01L29/0 H01L29/06 H01L29/066 H01L29/0661 H01L29/069 H01L29/0696 H01L29/4 H01L29/40 H01L29/402 H01L29/404 H01L29/407 H01L29/408 H01L29/42 H01L29/423 H01L29/4238 H01L29/7 H01L29/78 H01L29/783 H01L29/7831 H01L29/7833 H01L29/7835 H01L29/786 H01L29/7862 H01L29/78624 H01L29/7864 H01L29/78648

IPC - классификация

G G0 G06 G06F G06F3 G06F30 G06F30/G06F30/3 G06F30/30 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/7 H01L21/76 H01L21/761 H01L29 H01L29/H01L29/4 H01L29/40 H01L29/407

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