METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

04-07-2013 дата публикации

Номер:

WO2013097573A1

Автор: WU, Hsiaochia, FANG, Shilin, LO, Tsehuang, CHEN, Zhengpei, ZHANG, Shu, HE, Yanqiang

Принадлежит: 无锡华润上华半导体有限公司

Контакты:

Номер заявки: CN53-08-201296

Дата заявки: 28-11-2012

[0000]

The present invention relates to the technical field of semiconductor manufacturing. Disclosed is a method for manufacturing a semiconductor device, which solves the problem in the prior art that the silicon on the edge of an oxide layer in an LDMOS drift region is easily exposed and causes breakdown of an LDMOS device. In the technical solution provided by the embodiment of the present invention, a method for manufacturing a semiconductor device is provided, which comprises: providing a semiconductor substrate comprising an LDMOS region and a CMOS region; forming a sacrificial oxide layer on the semiconductor substrate; removing the sacrificial oxide layer; forming a masking layer on the semiconductor substrate after the sacrificial oxidation treatment; using the masking layer as a mask to form an LDMOS drift region, and forming a drift region oxide layer above the drift region; and removing the masking layer. The embodiment of the present invention is applicable to a BCD process and the like.

[1]

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/8 H01L21/82 H01L21/823 H01L21/8234 H01L21/82341 H01L21/823412 H01L21/82345 H01L21/823456 H01L21/8238 H01L21/82380 H01L21/823807 H01L21/82385 H01L27 H01L27/H01L27/0 H01L27/08 H01L27/085 H01L27/09 H01L27/092 H01L27/0922

IPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/8 H01L21/82 H01L27 H01L27/H01L27/0 H01L27/08 H01L27/085 H01L27/09 H01L27/092 H03 H03K H03K3 H03K3/H03K3/3 H03K3/35 H03K3/356 H03K3/3568

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