10-10-2013 дата публикации
Номер: US20130267082A1
Disclosed are chalcogenide-containing precursors for use in the manufacture of semiconductor, photovoltaic, LCD-TFT1 or fiat panel type devices. Also disclosed a methods of synthesizing the chalcogenide-containing precursors and vapor deposition methods, preferably thermal ALD, using the chaicogenide-containing precursors to form chaicogenide-containing films. 1. A method for the deposition of a chalcogenide-containing film , comprising the steps of:{'sub': 2', '2', '2', '2', '2', '2', '2', '3', '2', '3', '2', '3', '2', '2', '2', '2', '2', '2', '2', '2', '3', '2', '3', '2', '3', '2', '3', '3', '3', '3', '3', '3', '3', '3', '3, 'a) introducing into a reactor containing at least one substrate a vapor of at least one chalcogenide-containing precursor selected from the group consisting of MeGe(TeMe), MeGe(TetBu), tBuGe(TetBu), MeGe(TeSiMe), (MeSi)Ge(TeSiMe), MeSi(TeMe), MeSi(TetBu), tBuSi(TetBu), MeSi(TeSiMe), (MeSi)Si(TeSiMe), MeGe(TeMe), MeGe(TetBu), (SiMe)Ge(TeSiMe), MeSi(TeMe), MeSi(TetBu)and (SiMe)Si(TeSiMe); and'}b) depositing at least part of the at least one chalcogenide-containing precursor onto the at least one substrate to form a chalcogenide-containing film on at least one surface of the at least one substrate using a vapor deposition process.2. The method of claim 1 , wherein the at least one chalcogenide-containing precursor is (MeTe)GeMe.3. The method of claim 1 , further comprising introducing one or more doping elements to the chalcogenide-containing film claim 1 , wherein the one or more doping elements are selected from the group consisting of silicon claim 1 , nitrogen claim 1 , and oxygen.4. The method of claim 1 , further comprising introducing a reactant into the reactor claim 1 , wherein the reactant is selected from the group consisting of H claim 1 , NH claim 1 , amines claim 1 , imines claim 1 , hydrazines claim 1 , SiH claim 1 , SiH claim 1 , SiH claim 1 , BH claim 1 , hydrogen-containing fluids claim 1 , oxygen claim 1 , ozone claim 1 , ...
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