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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 331. Отображено 100.
23-05-2013 дата публикации

METHOD OF MATERIAL PROCESSING BY LASER FILAMENTATION

Номер: US20130126573A1
Автор: HERMAN PETER R., HOSSEINI S. ABBAS
Принадлежит: FILASER INC.

A method is provided for the internal processing of a transparent substrate in preparation for a cleaving step. The substrate is irradiated with a focused laser beam that is comprised of pulses having an energy and pulse duration selected to produce a filament within the substrate. The substrate is translated relative to the laser beam to irradiate the substrate and produce an additional filament at one or more additional locations. The resulting filaments form an array defining an internally scribed path for cleaving said substrate. Laser beam parameters may be varied to adjust the filament length and position, and to optionally introduce V-channels or grooves, rendering bevels to the laser-cleaved edges. Preferably, the laser pulses are delivered in a burst train for lowering the energy threshold for filament formation, increasing the filament length, thermally annealing of the filament modification zone to minimize collateral damage, improving process reproducibility, and increasing the processing speed compared with the use of low repetition rate lasers. 1. A method of preparing a substrate for cleavage , the method comprising the steps of:irradiating the substrate with a burst of pulses of a focused laser beam, wherein the substrate is transparent to the focused laser beam, wherein a time delay between successive pulses in the burst of pulses is less than a time duration over which relaxation of one or more material modification dynamics occurs, and wherein the burst of pulses have an energy and pulse duration selected to produce a filament within the substrate;translating the substrate relative to the focused laser beam to irradiate the substrate and produce an additional filament at one or more additional locations;wherein the filaments form an array defining an internally scribed path for cleaving the substrate.2. The method according to wherein substrate is translated relative to the focused laser beam with a rate selected to produce a filament spacing on a ...

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Номер записи: 1
23-05-2013 дата публикации

LASER LIFT-OFF APPARATUS

Номер: US20130128910A1
Автор: Matsuda Ryozo, Narumi Keiji
Принадлежит: USHIO INC.

In order to separate a material layer from a substrate at the boundary face between the substrate and the material layer, a laser light is applied to a workpiece from the substrate side through a mask, the work having the material layer formed on the substrate. The laser beam is split into a plurality of small area laser light by the mask , and two or more irradiation regions are formed on the workpiece. Adjacent irradiation regions are separated from each other, and an edge part of each irradiation region and an edge part of an adjacent irradiation region, which extend in a direction parallel to the relative moving direction of the workpiece, are arranged such that the edge of the irradiation region and the edge of the adjacent irradiation region are sequentially overlapped each other as the work is moved. 1. A laser lift-off apparatus comprising:a laser source for irradiating a workpiece, in which a base plate is formed on a material layer, with laser light passing through the base plate;a conveyance mechanism in which the workpiece and the laser source are moved relatively with respect to each other, anda laser light formation unit, which divides laser light emitted from the laser source into two or more laser lights, so that two or more irradiation regions, which are separated from each other by the respective divided laser light, are formed on the workpiece,{'sup': '2', 'wherein the two or more irradiation regions formed by the laser light formation unit, the area of which is 0.25 mmor less, are arranged so that end portions of adjoining irradiation regions which extend in a direction parallel to a moving direction of the workpiece, are overlapped each other in series and end portions of adjoining irradiation regions which extends in a direction perpendicular to the moving direction, are overlapped, workpiece is moved in a one direction relatively to the laser source and an entire face of the workpiece is irradiated with the laser light.'}2. The laser lift-off ...

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Номер записи: 2
18-07-2013 дата публикации

METHOD OF FORMING AN OPTICAL DEVICE

Номер: US20130180959A1
Автор: Ardron Marcus, Giet Stephanie, Hand Duncan Paul, Weston Nicholas John
Принадлежит: RENISHAW PLC

A method of forming an optical device comprises applying a laser beam to a target area of the surface so as to selectively heat material of the surface thereby to provide transfer of material due to a surface tension gradient, wherein the surface is such that, when liquid, parts of the surface at higher temperatures have a higher surface tension than adjacent parts of the surface at lower temperatures. 1. A method of forming an optical device comprising:applying a laser beam to a target area of the surface so as to selectively heat material of the surface thereby to provide transfer of material due to a surface tension gradient,wherein the surface is such that, when liquid, parts of the surface at higher temperatures have a higher surface tension than adjacent parts of the surface at lower temperatures.2. A method according to claim 1 , comprising controlling the atmosphere at the surface so as to provide that the surface claim 1 , when liquid claim 1 , is such that parts of the surface at higher temperatures have a higher surface tension than adjacent parts of the surface at lower temperatures.3. A method according to claim 2 , wherein controlling the atmosphere comprises providing an atmosphere at the surface rich in a gas that causes oxidation claim 2 , phosphorus evaporation claim 2 , carbide formation and/or chromium migration.4. A method according to claim 2 , wherein the controlling of the atmosphere comprises providing a CO-rich atmosphere at the surface during application of the laser beam to the surface.5. A method according to claim 1 , wherein the method comprises providing a surface comprising material having a composition such as to provide that claim 1 , when liquid claim 1 , parts of the surface at higher temperatures have a higher surface tension than adjacent parts of the surface at lower temperatures.6. A method according to claim 5 , wherein the composition is achieved by treating the surface of the material with a surface active agent that ...

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Номер записи: 3
19-12-2013 дата публикации

LASER MARKING PROCESS AND ARTICLES

Номер: US20130337213A1
Автор: Emslander Jeffrey O., Fleming Danny L., Smithson Robert L. W.
Принадлежит: 3M INNOVATIVE PROPERTIES COMPANY

A process to mark a multilayered article having a release layer and an adhesive layer, using a laser to produce markings within more than one layer of the article. The process includes providing a multilayered article including a laser-markable release liner having a release layer, and a laser-markable adhesive film; and marking the laser-markable release liner and the laser-markable adhesive film by directing laser radiation from at least a first source of laser radiation into the multilayered article through at least the first release layer to induce an interaction between a first light-sensitive pigment and a first organic polymer in the laser-markable release liner, and a second light-sensitive pigment and a second organic polymer in the laser-markable adhesive film, to form at least one visually perceptible marking in each of the laser-markable release liner and the laser-markable adhesive film. The release layer is substantially transparent to the laser radiation. Multilayered articles having multi-layer laser markings are also disclosed. 1. A process , comprising: a laser-markable release liner further comprising a first laser-markable layer comprised of at least a first organic polymer and at least a first light-sensitive pigment, a first release layer associated with an external major surface of the laser-markable release liner and comprised of at least one release agent, and a second release layer comprised of at least one release agent and associated with a second major surface of the laser-markable release liner opposite the first release layer; and', 'a laser-markable adhesive film further comprising a second laser-markable layer comprised of at least a second organic polymer and at least a second light-sensitive pigment, and an adhesive layer comprising at least one pressure sensitive adhesive associated with a major surface of the laser-markable adhesive film, wherein the adhesive layer is positioned between the laser-markable release liner and the ...

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Номер записи: 4
26-12-2013 дата публикации

METHOD OF CUTTING OBJECT TO BE PROCESSED

Номер: US20130344686A1
Автор: Fukumitsu Kenshi, FUKUYO Fumitsugu
Принадлежит: HAMAMATSU PHOTONICS K.K.

A method of cutting an object which can accurately cut the object is provided. An object to be processed such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region due to multiphoton absorption within the object , and cause the modified region to form a starting point region for cutting shifted from the center line CL of the thickness of the object toward the front face of the object along a line along which the object should be cut. Subsequently, the object is pressed from the rear face side thereof. This can generate a fracture from the starting point region for cutting acting as a start point, thereby accurately cutting the object along the line along which the object should be cut. 13-. (canceled)4. A method of cutting an object having a wafer-like shape , the object having a laminated portion including a functional device on a front face of the object , and a protective film attached to the front face of the object covering the functional device , the method comprising:a modified region forming step of irradiating the object with laser light while positioning a focusing point of the laser light within the object, thereby forming modified region within the object along a cutting line along which the object is to be cut, the modified region being deviated from a center position of the object in a thickness direction of the object towards a rear face of the object; anda pressing step of pressing the object from the front face of the object through the protective film to cut the object into chips, after the modified region forming step.5. The method according to claim 4 , wherein in the modified region forming step claim 4 , the laser light enters by the rear face of the object and the modified region is formed to be deviated from the center position of the object in the thickness direction of the object towards the rear face of the object.6. The method according to claim 4 , ...

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Номер записи: 5
02-01-2014 дата публикации

TRANSPARENT MATERIAL PROCESSING WITH AN ULTRASHORT PULSE LASER

Номер: US20140004318A1
Автор: ARAI Alan Y., Bovatsek James, Yoshino Fumiyo
Принадлежит: IMRA AMERICA, INC.

Methods for ultrashort pulse laser processing of optically transparent materials. A method for scribing transparent materials uses ultrashort laser pulses to create multiple scribe features with a single pass of the laser beam across the material, with at least one of the scribe features being formed below the surface of the material. This enables clean breaking of transparent materials at a higher speed than conventional techniques. Slightly modifying the ultrashort pulse laser processing conditions produces sub-surface marks. When properly arranged, these marks are clearly visible with side-illumination and not clearly visible without side-illumination. In addition, a method for welding transparent materials uses ultrashort laser pulses to create a bond through localized heating. The ultrashort pulse duration causes nonlinear absorption of the laser radiation, and the high repetition rate of the laser causes pulse-to-pulse accumulation of heat within the materials. The laser is focused near the interface of the materials, generating a high energy fluence at the region to be welded. This minimizes damage to the rest of the material and enables fine weld lines. 1. A laser-based method for generating visible patterns of optical defects comprising marks formed below the surface of a transparent material , said patterns having controllable contrast and visibility , said method comprising:forming a plurality of marks at different depths within the material using tightly focused ultrashort pulsed laser outputs, said tightly focused outputs having controllably varied focal points and sufficient fluence so as to create regions of material modification at said different depths below said surface, such that marks at different depths are arranged in such a way as to prevent shadowing where a first mark prevents directional illumination from impinging a second mark, and wherein said marks are sufficiently small and smooth to decrease visibility under ambient light while ...

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Номер записи: 6
02-01-2014 дата публикации

LASER DICING METHOD

Номер: US20140004639A1
Автор: SATO Shoichi
Принадлежит:

A laser dicing method of a work piece on a surface of which a metal film is provided, includes: a first metal film removing of irradiating a pulse laser beam defocused from the metal film, along a first line, and removing the metal film; a second metal film removing of irradiating the pulse laser beam defocused from the metal film, along a second line orthogonal to the first line, and removing the metal film; and a crack forming of irradiating the pulse laser beam in an area from which the metal film of the work piece is removed, and forming the crack in the work piece, and, in an area in which the first line and the second line cross, irradiation of the pulse laser beam is interrupted in the first metal film removing or the second metal film removing. 1. A laser dicing method of a work piece on a surface of which a metal film is provided , the laser dicing method comprising:setting the work piece on a stage;a first metal film removing of irradiating a pulse laser beam defocused from the metal film, along a first line, and removing the metal film;a second metal film removing of irradiating the pulse laser beam defocused from the metal film, along a second line orthogonal to the first line, and removing the metal film;and a crack forming of irradiating the pulse laser beam in an area from which the metal film of the work piece is removed, and forming the crack in the work piece,wherein, in an area in which the first line and the second line cross, irradiation of the pulse laser beam is interrupted in one of the first metal film removing and the second metal film removing.2. The laser dicing method according to claim 1 , wherein the work piece is a substrate on which a LED is formed.4. The laser dicing method according to claim 1 , wherein claim 1 , in the first or second metal film removing claim 1 , a irradiation control signal which comprises information of an interruption portion of irradiation of the pulse laser beam is generated claim 1 , and irradiation of the ...

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Номер записи: 7
27-03-2014 дата публикации

METHOD FOR CLEANING AND STRIPPING A TURBOSHAFT ENGINE BLADE USING A PULSED LASER

Номер: US20140082939A1
Автор: Bourdin Franck, FEVRIER Thierry, Gestin Jerome, Hugot Juliette
Принадлежит: SNECMA

A method for cleaning a turboshaft engine blade comprising a superalloy body covered with a coating, in which the coating of the blade is at least partially machined using a pulsed laser. At least the feed rate of the pulsed laser and the pulse frequency of the pulsed laser are parameterised such that the machined surface of the blade has a roughness of 4 μm to 10 μm. 110-. (canceled)11. A method for cleaning and stripping a turboshaft engine blade comprising a superalloy body covered with a coating , comprising:machining, at least partially, the coating of the blade using a pulsed laser, at least the feed rate of the pulsed laser and the pulse frequency of the pulsed laser being parameterised such that the machined surface of the blade has a roughness of 4 μm to 10 μm.12. The method according to claim 11 , wherein as the coating comprises at least one external ceramic layer and the pulsed laser is parameterised in order to machine only the external ceramic layer.13. The method according to claim 11 , wherein the coating comprises at least one external ceramic layer and one metal layer disposed between the superalloy body and the ceramic layer claim 11 , and the pulsed laser is parameterised in order to machine only the external ceramic layer and the metal layer.14. The method according to claim 11 , wherein the pulsed laser is parameterised in order to machine the entire coating of the blade.15. The method according to claim 11 , wherein the feed rate of the pulsed laser is between 25 mm/s and 1000 mm/s claim 11 , preferably between 100 mm/s and 600 mm/s.16. The method according to claim 11 , wherein the pulse frequency of the pulsed laser is between 12 kHz and 50 kHz claim 11 , preferably less than or equal to 16 kHz.17. The method according to claim 11 , wherein the roughness is constant over the machined coating.18. The method according to claim 11 , wherein the coating comprises a plurality of layers claim 11 , the pulsed laser machines the layers of the ...

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Номер записи: 8
03-04-2014 дата публикации

Method of welding by means of a laser

Номер: US20140091064A1
Автор: Christian Reiter, Holger Schulz, Olaf Petersen, Ralf Egerer
Принадлежит: Nexans SA

Method of welding edges which are placed against each other of at least one workpiece of metal by means of a laser is indicated, in which the areas of the workplace located at the edges are subjected to a pretreatment for increasing the absorption capacity of the light of the laser. For this purpose, initially color is sprayed or splashed onto the areas of the workpiece located at the edges, while avoiding any mechanical contact of the workpiece, by means of a device ( 7 ) which emits the color, and the edges of the workpiece are subsequently welded together by means of a laser ( 11 ).

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Номер записи: 9
04-01-2018 дата публикации

NONPLANAR WAFER AND METHOD FOR PRODUCING A NONPLANAR WAFER

Номер: US20180001416A1
Автор: Richter Jan
Принадлежит: SILTECTRA GmbH

The invention relates to a method for cutting off at least one portion (), in particular a wafer, from a solid body (). The method comprises at least the following steps: modifying the crystal lattice of the solid body () by means of a modifier (), wherein a number of modifications () are produced to form a nonplanar, in particular convex, detachment region () in the interior of the solid body, wherein the modifications () are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion () and a defined further treatment of the portion (), detaching the portion () from the solid body (). 142. A method for separating at least one solid body portion () , in particular a wafer , from a solid body () , comprising at least the following steps:{'b': 2', '18, 'modifying the crystal lattice of the solid body () by means of a modifier (),'}{'b': 19', '8', '2, 'wherein a number of modifications () are produced, to form a non-planar, in particular convex, detachment region () in the interior of the solid body (),'}{'b': 19', '4', '4, 'wherein the modifications () are produced in dependence of predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the solid body portion () in dependence of a defined further treatment of the solid body portion (),'}{'b': 4', '2, 'detaching the solid body portion () from the solid body ().'}2. The method according to claim 1 ,characterised in that{'b': 19', '2', '6', '4', '4, 'the modifications () inside the crystal lattice of the solid body () are produced by means of radiation () from at least one laser, in particular a picosecond or femtosecond laser, introduced into the interior of the solid body portion () via an outer surface of the solid body portion ().'}3. The method according to or claim 1 ,characterised in that{'b': 50', '40', '42', '4', '4', '50', '4', '50', '4, 'the further treatment ...

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Номер записи: 10
07-01-2016 дата публикации

Method for decorating parts and decorated parts

Номер: US20160001587A1
Автор: Tokinobu SHIMADA
Принадлежит: Trinity Industrial Corp

A method for decorating a given part is designed to print designs onto a coat layer deteriorating the coat layer on the surface of the given part. In the coat layer-forming process, in spreading the metallic-coating material containing aluminum flake onto the surface of the resin compact, the coat layer is formed on the surface of it. In a laser-printing process, a laser is irradiated on the condition of being able to maintain the same state of the coat layer before and after irradiating the laser, so as to reduce the aspect ratio of the micronized-metallic powder, which is the average value of the ratio of the maximum dimension of the micronized-metallic powder to the average value of the minimum dimension of the micronized-metallic powder, which laser irradiation eventually thermally deforms the first scale-shaped micronized-metallic powder into a spherical shape in the coat layer to print designs on the film.

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Номер записи: 11
05-01-2017 дата публикации

TEMPERED GLASS ARTICLE WITH SUB-SURFACE LASER ENGRAVING AND PRODUCTION METHOD

Номер: US20170001906A1
Автор: CURDT Axel, KARAGÖZ Hüda
Принадлежит:

A glass article is provided that has sub-surface laser engraving and a prestressing of the surface. A production method for the glass article and the use of the glass article are also provided. The sub-surface laser engraving is arranged in a partial volume of the glass article that is under tensile stress, with tempering of the glass article being performed after the introduction of the sub-surface laser engraving. 1. A glass article comprising:a surface having a compressive stress;an internal region having at least one region of compressive stress and at least one region of tensile stress; anda sub-surface laser engraving arranged in the internal region, wherein the sub-surface laser engraving is arranged in the least least one region of tensile stress.2. The glass article according to claim 1 , wherein the glass article is a thermally tempered article.3. The glass article according to claim 1 , wherein the surface has a compressive stress of at least 50 Mpa.4. The glass article according to claim 1 , wherein the surface has a compressive stress of at least 90 MPa.5. The glass article according to claim 1 , wherein the glass article is a pane with a pane thickness of 2 mm to 12 mm.6. The glass article according to claim 5 , wherein the pane thickness is 4 mm to 6 mm.7. The glass article according to claim 5 , wherein the sub-surface laser engraving is at a minimum distance from the surface of the pane thickness divided by 4.8. The glass article according to claim 5 , wherein the sub-surface laser engraving is at a minimum distance from the surface of the pane thickness divided by 3.9. The glass article according to claim 1 , wherein the sub-surface laser engraving comprises a plurality of defects each having an average size of 10 μm to 1000 μm.10. The glass article according to claim 9 , wherein the average size is 20 μm to 100 μm.11. The glass article according to claim 9 , wherein the plurality of defects together form a feature selected from the group ...

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Номер записи: 12
14-01-2016 дата публикации

GLASS SHEET PROCESSING METHOD AND GLASS SHEET PROCESSING APPARATUS

Номер: US20160009587A1
Автор: NAGATA Takahiro, SAITO Isao
Принадлежит: Asahi Glass Company, Limited

A glass sheet processing method is provided for irradiating a laser beam on a glass sheet and forming a cleavage in the glass sheet with thermal stress. If each of an irradiation area of the laser beam on the surface and an irradiation area of the laser beam on the back face of the glass sheet includes a peak position of a power density of the laser beam, each irradiation area has an asymmetrical power density distribution that is asymmetrical with respect to a reference line that passes through the peak position and is parallel to a moving direction of the peak position. If each irradiation area has no peak position, each irradiation area has an asymmetrical shape that is asymmetrical with respect to a reference line that passes through a centroid position of the irradiation area and is parallel to a moving direction of the centroid position. 1. A glass sheet processing method comprising the steps of:irradiating a laser beam on a glass sheet such that the laser beam is transmitted through the glass sheet from a surface to a back face of the glass sheet;moving an irradiating position of the laser beam with respect to the glass sheet; andforming a cleavage in the glass sheet with thermal stress that is generated by irradiating the laser beam;wherein the laser beam is emitted from a light source and is irradiated on the surface of the glass sheet to form an irradiation area of the laser beam on the surface, and the laser beam that has been transmitted through the surface of the glass sheet is irradiated on the back face of the glass sheet to form an irradiation area of the laser beam on the back face;wherein in a case where each irradiation area includes a peak position of a power density of the laser beam, each irradiation area is arranged to have an asymmetrical power density distribution that is asymmetrical with respect to a reference line that passes through the peak position of the irradiation area and is parallel to a moving direction of the peak position; ...

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Номер записи: 13
12-01-2017 дата публикации

WAFER PROCESSING METHOD

Номер: US20170011965A1
Автор: Nakamura Masaru
Принадлежит:

There is provided a wafer processing method including a modified layer forming step. In the wafer processing method, the power of a pulse laser beam set in the modified layer forming step is set to power that forms modified layers and cracks in such a manner that a wafer is allowed to be divided into individual device chips before the thickness of the wafer reaches a finished thickness and, after the wafer is divided into the individual device chips, the time until the thickness of the wafer reaches the finished thickness is such a time that damage due to rubbing of the individual device chips against each other is not caused through grinding under a predetermined grinding condition set in a back surface grinding step. 1a protective member disposing step of disposing a protective member on the front surface of the wafer;a modified layer forming step of positioning a light focus point of a pulse laser beam having such a wavelength as to be transmitted through the wafer on which the protective member is disposed at inside of the wafer along the planned dividing lines and irradiating the wafer with the pulse laser beam with predetermined power to form modified layers and cracks extending from the modified layers toward the front surface and a back surface; anda back surface grinding step of, after carrying out the modified layer forming step, holding a side of the protective member on a chuck table and grinding the back surface of the wafer by a grinding wheel under a predetermined grinding condition to divide the wafer into the individual device chips and carrying out grinding until the modified layers are removed and thickness of the wafer reaches a target finished thickness,wherein the predetermined power of the pulse laser beam set in the modified layer forming step is set to power that forms the modified layers and the cracks in such a manner that the wafer is allowed to be divided into the individual device chips before the thickness of the wafer reaches the ...

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Номер записи: 14
15-01-2015 дата публикации

Auger with Laser Cladding and/or Laser Heat Treatment and Method

Номер: US20150014127A1
Автор: Johnson Keith A.
Принадлежит: Kondex Corporation

An agricultural auger for conveying grain material is provided. The agricultural auger includes a shaft that is adapted to rotate about a central axis. A flight extends and spirals about the shaft. The flight further includes a base material of a first hardness. A laser treated material is formed on or into the base material along a portion of the flight. The laser treated material comprises a second hardness greater than the first hardness. 1. A fabricated agricultural auger for conveying grain material , comprising:a shaft adapted to rotate about a central axis;a flight extending and spiraling about the shaft, the flight comprising a base material of a first hardness;wherein the flight is separately fabricated from the shaft and welded or otherwise secured thereto; anda laser treated material formed on or into the base material along a portion of the flight, the laser treated material comprising a second hardness greater than the first hardness.2. The fabricated agricultural auger of claim 1 , wherein the base material is steel claim 1 , and the laser treated material comprises a laser hardened layer formed integrally with an outer surface of the base material.3. The fabricated agricultural auger of claim 2 , wherein the laser hardened layer is at least 0.5 millimeter in depth thickness along the base material.4. The fabricated agricultural auger of claim 3 , wherein the laser hardened layer is between 0.5 and 5 millimeters in depth thickness along the base material claim 3 ,5. The fabricated agricultural auger of claim 2 , wherein auger has a predetermined inlet end and a predetermined outlet end claim 2 , the flight includes an upstream face facing toward the outlet end and a downstream face facing toward the inlet end claim 2 , wherein rotation of the auger conveys material from the inlet end to the outlet end claim 2 , wherein the laser hardened layer is along the upstream face only claim 2 , the downstream face only having an outer untreated surface of the ...

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Номер записи: 15
15-01-2015 дата публикации

LASER-INDUCED PLASMA DEBURRING

Номер: US20150014289A1
Автор: Gao Yibo, Wu Benxin, Zhou Yun
Принадлежит:

Processes and corresponding or associated arrangements for removal of a burr from a workpiece, particularly micromachined workpieces, involving irradiating a plasma plume source material with a laser beam to generate a plasma plume. The plasma plume at least in part impacts the burr disposed on the workpiece to at least in part remove the burr from the workpiece. In select embodiments, the plasma plume source material can be a part of the workpiece or a non-workpiece sacrificial material. 1. A process for removing a burr from a workpiece , the process comprising:irradiating a plasma plume source material with a laser beam to generate a plasma plume, the plasma plume at least in part impacting the burr disposed on the workpiece to at least in part remove the burr from the workpiece.2. The process of wherein the plasma plume source material is a solid object.3. The process of wherein the solid object is at least in part the workpiece.4. The process of wherein the solid object comprises a non-workpiece sacrificial material.5. The process of wherein the burr is at least in part disposed on an outer surface of the workpiece.6. The process of wherein the burr is disposed at least in part on a side wall of a blind hole or channel in the workpiece.7. The process of wherein the burr is disposed at least in part on a side wall of a through hole or channel in the workpiece.8. The process of wherein the plasma plume source material is a gaseous medium.9. The process of wherein the plasma plume source material is a liquid medium.10. The process of wherein the workpiece is a micromachined object.11. The process of wherein the laser beam is produced by a continuous wave laser.12. The process of wherein the laser beam is produced by a pulsed laser.13. A process for removing a burr from a micromachined workpiece claim 1 , the process comprising:irradiating a plasma plume source material solid object with a laser beam from a laser to generate a plasma plume, the plasma plume at least ...

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Номер записи: 16
15-01-2015 дата публикации

PATTERNED THIN FILMS BY THERMALLY INDUCED MASS DISPLACEMENT

Номер: US20150014891A1
Автор: Amatucci Glenn G., Ferrer Anthony
Принадлежит:

The described invention provides a method of patterning a thin film deposited on a substrate comprising applying a moving focused field of thermal energy to the thin film deposited on the substrate; and dewetting the thin film from the substrate. Dewetting the thin film from the substrate is characterized by a negative space of a desired design; and displacement of the thin film into adjacent structures, thereby accumulating thin film in the adjacent structures. 1. A method of patterning a thin film deposited on a substrate comprising:(A) applying a moving focused field of thermal energy to the thin film deposited on the substrate; and(B) dewetting the thin film from the substrate, (i) a negative space of a desired design; and', '(ii) displacement of the thin film into adjacent structures, thereby accumulating thin film in the adjacent structures., 'the dewetting being characterized by2. The method according to claim 1 , wherein the focused field of thermal energy is from a laser.3. The method according to claim 1 , wherein the focused field of thermal energy is at a wavelength matched to the wavelength absorbed by the thin film.4. The method according to claim 3 , wherein the wavelength is not absorbed by the substrate.5. The method according to claim 1 , wherein the thin film is an inorganic compound.6. The method according to claim 1 , wherein the thin film is comprised of a metal or metal alloy.7. The method according to claim 6 , wherein the metal is comprised of bismuth.8. The method according to claim 6 , wherein the metal is comprised tin.9. The method according to claim 1 , wherein the substrate is an inorganic substance.10. The method according to claim 9 , wherein the inorganic substance is selected from the group consisting of glass claim 9 , ceramic claim 9 , silicon oxide and silicon nitride.11. The method according to claim 10 , wherein the inorganic substance is glass.12. The method according to claim 11 , wherein the glass is borosilicate glass.13. ...

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Номер записи: 17
19-01-2017 дата публикации

SYSTEM AND METHOD FOR PROCESSING RADIATION DETECTORS USING LASER BEAMS

Номер: US20170014943A1
Автор: Sabet Hamid
Принадлежит:

A system, and method, for processing optical materials, such as scintillation materials, using laser beams is provided. In some aspects, the provided system includes a laser system configured to direct a laser beam to a focus in a scintillation material, and a holder configured to engage the scintillation material and position a portion of the scintillation material at the focus. The system also includes a controller configured to drive at least one of the laser system and the holder to form microstructures in the scintillation material having an altered crystal structure. 1. A system for processing a scintillation material using laser beams , the system comprising:a laser system configured to direct a laser beam to a focus in a scintillation material;a holder configured to engage the scintillation material and position a portion of the scintillation material at the focus; anda controller configured to drive at least one of the laser system and the holder to form microstructures in the scintillation material having an altered crystal structure.2. The system of claim 1 , the laser system further comprising at least one laser source configured to generate light defined by a pulse energy claim 1 , or a pulse duration claim 1 , or a wavelength claim 1 , or a pulse repetition claim 1 , or combinations thereof.3. The system of claim 1 , the laser system further comprising at least one focusing lens configured to direct the laser beam to the focus claim 1 , and defined by a lens numerical aperture claim 1 , or a lens working distance claim 1 , or both.4. The system of claim 2 , wherein the pulse duration is in one of a nanosecond range claim 2 , or a picosecond range claim 2 , or a femtosecond range claim 2 , or combinations thereof.5. The system of claim 2 , wherein the wavelength of light is about 532 nanometers claim 2 , or about 946 nanometers claim 2 , or about 1064 nanometers.6. The system of claim 2 , the laser system further comprising a beam splitter for ...

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Номер записи: 18
19-01-2017 дата публикации

POLYCRYSTALLINE SiC WAFER PRODUCING METHOD

Номер: US20170014944A1
Автор: Hirata Kazuya, Nishino Yoko
Принадлежит:

There is provided a polycrystalline SiC wafer producing method. In this method, in a modified layer forming step for forming an interface for producing a polycrystalline SiC wafer from a polycrystalline SiC ingot, the formed interface is a surface formed by linking of modified layers formed in such a manner that an initial modified layer is formed through splitting of polycrystalline SiC into amorphous silicon and amorphous carbon at the light focus point of a pulse laser beam and then polycrystalline SiC splits into amorphous silicon and amorphous carbon at a position at which the power density is constant with absorption of the continuously-emitted pulse laser beam by amorphous carbon formed in advance. 1. A polycrystalline SiC wafer producing method for producing a polycrystalline SiC wafer from a polycrystalline SiC ingot , the method comprising:a modified layer forming step of positioning a light focus point of a pulse laser beam having such a wavelength as to be transmitted through the polycrystalline SiC ingot at a predetermined position from an irradiated surface of the polycrystalline SiC ingot and irradiating the polycrystalline SiC ingot with the pulse laser beam to form modified layers at a position at which an interface between the polycrystalline SiC wafer and the polycrystalline SiC ingot is to be formed; anda polycrystalline SiC wafer separating step of giving an external force to an upper side relative to the interface formed by the modified layer forming step and separating the polycrystalline SiC wafer from the interface,wherein the interface formed in the modified layer forming step is a surface formed by linking of modified layers formed in such a manner that an initial modified layer is formed through splitting of polycrystalline SiC into amorphous silicon and amorphous carbon at the light focus point of the pulse laser beam, the pulse laser beam emitted next is absorbed by the amorphous carbon formed by the pulse laser beam emitted in advance ...

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Номер записи: 19
19-01-2017 дата публикации

METHOD FOR PRODUCING A DECORATIVE COMPOSITE HAVING AT LEAST ONE LOCAL WEAKENING AND A WEAKENED SPACER FABRIC

Номер: US20170015268A1
Автор: Dorn Felix, Kaeppeler Karlheinz, TOPP JENNIFER
Принадлежит:

Method for producing a weakened decorative composite from at least one decorative material () and a spacer fabric (), in particular for producing coverings of airbags in motor vehicles, which spacer fabrics () have an upper cover layer () and a lower cover layer () and a layer () having spacer threads () is located between the cover layers (), wherein the weakenings in the spacer fabric () are blind holes () which are introduced into the lower cover layer () of the spacer fabric (), wherein the blind holes () substantially pass through the lower cover layer () and the layer () having the spacer threads () and the upper cover layer () is substantially not weakened. 1251111121315141213111613111613151412. Method for producing a weakened decorative composite from at least one decorative material () and a spacer fabric () for producing coverings of airbags in motor vehicles , which spacer fabrics () have an upper cover layer () and a lower cover layer () , and a layer () having spacer threads () is located between the cover layers ( , ) , characterised in that the weakenings in the spacer fabric () are blind holes () which are introduced into the lower cover layer () of the spacer fabric () , wherein the blind holes () substantially pass through the lower cover layer () and the layer () having the spacer threads () , and the upper cover layer () is substantially not weakened.21111121315141213111613111613151412. Method for producing a weakened spacer fabric () for producing coverings of airbags in motor vehicles , which spacer fabric () has an upper cover layer () and a lower cover layer () , and a layer () having spacer threads () is located between the cover layers ( , ) , characterised in that the weakenings in the spacer fabric () are blind holes () which are introduced into the lower cover layer () of the spacer fabric () , wherein the blind holes () substantially pass through the lower cover layer () and the layer () having the spacer threads () , and the upper ...

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Номер записи: 20
19-01-2017 дата публикации

METHOD FOR THE FABRICATION OF OPTICAL WAVEGUIDE DEVICES IN PHOTONIC CRYSTAL FIBERS AND IN WAVEGUIDES WITH HOLLOW STRUCTURES

Номер: US20170015585A1
Автор: BEST Garland, FERNANDES Luis Andre, KANE Saidou, Ng Mi Li, SEZERMAN Omur
Принадлежит:

There is provided a method to fabricate optical taps and waveguide devices in photonic crystal fibers and other fibers with hollow structures. The method involves a preparation step, where the hollow holes inside the fiber are collapsed or partially modified locally; and a waveguide fabrication step, where a femtosecond laser is focused inside the fiber and used to produce optical waveguides that interact in the region that was previously modified in the preparation step. 1. A method for making a femtosecond laser fabricated waveguide to couple light from a core of an optical fiber to a cladding of the optical fiber , the method comprising the steps of:a preparation step in which the optical fiber is heated in a localized region to modify a region of the core within the localized region; anda waveguide fabrication step in which a femtosecond laser is focused inside the optical fiber in order to define a waveguide that interacts with the modified core region.2. The method of wherein the preparation step modifies the region by producing a partial or complete collapse of any hollow structure surrounding the core within the localized region.3. The method of wherein the preparation step uses electrical arc discharge to heat the localized region.4. The method of wherein the preparation step uses electrical arc discharge to heat the localized region.5. The method of wherein the preparation step uses laser radiation to heat the localized region.6. The method of wherein the preparation step uses laser radiation to heat the localized region.7. The method of wherein the cladding of the optical fiber has a hollow structure.8. The method of wherein the optical fiber is a photonic crystal fiber.9. The method of wherein the optical fiber is a suspended core fiber. The present application claims priority to Canadian Application No. 2,897,130 filed Jul. 14, 2015, the content of which is incorporated by reference in its entirety.The present invention relates to the fabrication of ...

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Номер записи: 21
18-01-2018 дата публикации

CHIP AND METHOD OF MANUFACTURING CHIPS

Номер: US20180015569A1
Автор: LIN Po-Chun
Принадлежит:

A method of manufacturing chips from a semiconductor wafer having a plurality of streets on a front surface of the semiconductor wafer is provided. The method includes: forming a plurality of crack stopping structures on the semiconductor wafer at locations respectively aligned with intersections of the streets; irradiating a laser beam focused inside the semiconductor wafer along the streets to induce cracks; and breaking the irradiated semiconductor wafer along the cracks to the crack stopping structures, so as to separate the irradiated semiconductor wafer into the chips. 1. A method of manufacturing chips from a semiconductor wafer having a front surface on which a plurality of streets are defined and a back surface opposite to the front surface , the method comprising: 'etching the semiconductor wafer from the front surface to form a plurality of recesses, wherein the recesses serve as the crack stopping structures;', 'forming a plurality of crack stopping structures on the semiconductor wafer at locations respectively aligned with intersections of the streets, wherein the locations are on the front surface, and the forming comprises 'moving a focus point of the laser beam at a location in the semiconductor wafer between one of the recesses and the back surface during irradiating; and', 'irradiating a laser beam focused inside the semiconductor wafer along the streets to induce cracks, wherein the irradiating further comprisesbreaking the irradiated semiconductor wafer along the cracks to the crack stopping structures, so as to separate the irradiated semiconductor wafer into the chips.2. The method of claim 1 , wherein the breaking comprises:applying a tensile force to the irradiated semiconductor wafer.3. The method of claim 2 , wherein a protective tap is adhered to a back surface of the semiconductor wafer claim 2 , and the applying comprises:expanding the protective tap outwardly to apply the tensile force on the irradiated semiconductor wafer.48-. ( ...

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Номер записи: 22
21-01-2016 дата публикации

METHOD AND APPARATUS FOR PERFORMING LASER CURVED FILAMENTATION WITHIN TRANSPARENT MATERIALS

Номер: US20160016257A1
Автор: HOSSEINI S. ABBAS
Принадлежит: ROFIN-SINAR TECHNOLOGIES INC.

Systems and methods are described for forming continuous curved laser filaments in transparent materials. The filaments are preferably curved and C-shaped. Filaments may employ other curved profiles (shapes). A burst of ultrafast laser pulses is focused such that a beam waist is formed external to the material being processed without forming an external plasma channel, while a sufficient energy density is formed within an extended region within the material to support the formation of a continuous filament, without causing optical breakdown within the material. Filaments formed according to this method may exhibit lengths in the range of 100 μm-10 mm. An aberrated optical focusing element is employed to produce an external beam waist while producing distributed focusing of the incident beam within the material. Optical monitoring of the filaments may be employed to provide feedback to facilitate active control of the process. 1. A method of laser processing a transparent material , comprising the steps of:providing a laser beam, said laser beam includes a burst of laser pulses or a single laser pulse;providing a cubic phase plate or mask in said laser beam path to induce cubic phase in said laser pulses forming Airy beam;externally focusing said laser Airy beam relative to said transparent material to form a beam waist at a location that is external to said transparent material; and,said laser pulses are focused such that a sufficient energy density is maintained within said transparent material to form a continuous laser C-shaped curved filament therein without causing optical breakdown.2. A method of processing a transparent material , comprising the steps of:providing a laser beam, said laser beam having a plurality of bursts and each of said bursts include a plurality of pulses;generating an initial waist of said laser beam external to said transparent material;generating a weakly focused laser beam distributed within said transparent material in a C-shaped ...

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Номер записи: 23
26-01-2017 дата публикации

Method for Producing a Bird Protection Device and Bird Protection Device

Номер: US20170020123A1
Автор: ARNOLD Hans-Joachim, BISCHOFF Robert, KUERBITZ Steffen, LUSTER Andreas, RAINER Thomas
Принадлежит:

The invention relates to a method for producing a bird protection device arid to a bird protection device. According to the invention, a method for producing a bird protection device is proposed, wherein the bird protection device is made of an at least partially transparent material and contains an optical structure visible to a bird's eye. Here, the method comprises a radiation input, wherein the radiation input is implemented on and/or in the partially transparent material for forming the optical structure. The radiation input is preferably laser radiation. Suitable lasers for the radiation input are, for example, CO2 lasers with a wavelength of 1064 nm, picosecond lasers with a wavelength of 532 nm or nanosecond lasers with a wavelength of 532 nm. In one embodiment of the invention, the bird protection device furthermore comprises an element for increasing the contrast, wherein, for forming the optical structure, the radiation input is implemented on and/or in the element for increasing the contrast. 1. A method for producing a bird protection device , comprising the steps of:forming the bird protection device of an at least partially transparent material, andproviding an optical structure visible for a bird's eye, with a source of radiation, wherein the radiation is applied for forming the optical structure on and/or in the partially transparent material.2. The method for producing a bird protection device according to claim 1 , further comprising an element for contrast enhancement claim 1 , wherein for forming the optical structure the radiation is applied on and/or in the element for contrast enhancement.3. The method for producing a bird protection device according to claim 1 , wherein the optical structure is formed by employing laser radiation on and/or in the partially transparent material.4. The method for producing a bird protection device according to claim 1 , wherein the application of radiation into the optical structure causes a local change of ...

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Номер записи: 24
24-04-2014 дата публикации

METHOD AND APPARATUS FOR MARKING AN ARTICLE

Номер: US20140110384A1
Автор: Alpay Mehmet E., Howerton Jefferey, Kleinert Jan, MATSUMOTO Hisashi, MOORE Andy, Reichenbach Robert, Unrath Mark
Принадлежит: ELECTRO SCIENTIFIC INDUSTRIES, INC.

The invention is a method and an apparatus for marking an article and the article thus marked. It includes providing the article. Generating a plurality of groups of laser pulses. At least one of the plurality of groups is generated by modulating a beam of laser pulses to form a plurality of beamlets. Each, of the plurality of beamlets, include at least one laser pulse. It also includes directing the plurality of groups of laser pulses onto the article such that laser pulses within the at least one of the plurality of groups impinge upon the article at spot areas that do not overlap one another, wherein laser pulses within the plurality of groups are configured to produce a visible mark on the article. 1. A method of marking an article , comprising:providing an article having a preliminary visual appearance; and 'modulating a beam of laser pulses to form a plurality of beamlets, each of the plurality of beamlets including at least one laser pulse; and', 'generating a plurality of groups of laser pulses, wherein at least one of the plurality of groups is generated bydirecting the plurality of groups of laser pulses onto the article such that laser pulses within the at least one of the plurality of groups impinge upon the article at spot areas that do not overlap one another,wherein laser pulses within the plurality of groups are configured to produce a visible mark on the article, the mark having a modified visual appearance different from the preliminary visual appearance.2. The method of claim 1 , wherein the article includes a substrate and a passivation layer adjacent to the substrate.3. The method of claim 2 , wherein the substrate comprises a metal.4. The method of claim 3 , wherein the passivation layer comprises an oxide of the metal.5. The method of claim 2 , wherein the substrate comprises aluminum.6. The method of claim 1 , wherein at least one of the laser pulses includes light having a wavelength greater than 340 nm.7. The method of claim 1 , wherein at ...

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Номер записи: 25
02-02-2017 дата публикации

METHOD OF MATERIAL PROCESSING BY LASER FILAMENTATION

Номер: US20170028505A1
Автор: HERMAN PETER R., HOSSEINI S ABBAS
Принадлежит: ROFIN-SINAR TECHNOLOGIES INC.

A method is provided for the internal processing of a transparent substrate in preparation for a cleaving step. The substrate is irradiated with a focused laser beam that is comprised of pulses having an energy and pulse duration selected to produce a filament within the substrate. The substrate is translated relative to the laser beam to irradiate the substrate and produce an additional filament at one or more additional locations. The resulting filaments form an array defining an internally scribed path for cleaving said substrate. Laser beam parameters may be varied to adjust the filament length and position, and to optionally introduce V-channels or grooves, rendering bevels to the laser-cleaved edges. Preferably, the laser pulses are delivered in a burst train for lowering the energy threshold for filament formation and increasing the filament length. 124-. (canceled)25. A method of preparing a substrate for cleavage , the method comprising the steps of:irradiating said substrate with a single pulse of a focused laser beam, wherein said substrate is transparent to said focused laser beam, and wherein said single pulse has an energy and pulse duration selected to produce a single continuous filament within said substrate;translating said substrate relative to said focused laser beam to irradiate said substrate and produce additional single continuous filaments at locations in said substrate;said single continuous filaments form an array defining an internally scribed path for cleaving said substrate;each said single pulse of said focused laser beam is focused to provide a sufficient beam intensity within said substrate to cause self-focusing of the focused laser beam over an extended laser interaction focal volume, thereby producing a plasma channel within said substrate while avoiding optical breakdown, such that substantially uniform modification of said material occurs along said beam path, thereby forming a single continuous filament within said substrate; ...

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Номер записи: 26
01-02-2018 дата публикации

APPARATUSES AND METHODS FOR LASER PROCESSING

Номер: US20180029919A1
Автор: Schillinger Helmut, Schnitzler Daniel
Принадлежит:

A workpiece may be laser processed by a method that may include forming a contour line in the workpiece, and directing an infrared laser beam onto the workpiece along or near the contour line to separate the workpiece along the contour line. The contour line may include defects in the workpiece. The infrared laser beam may have a beam profile such that a greater distribution of cumulated energy from the infrared laser beam is located in areas adjacent to the contour line than directly on the contour line. 1. A method for laser processing a workpiece , the method comprising:forming a contour line in the workpiece, the contour line comprising defects in the workpiece; anddirecting an infrared laser beam onto the workpiece along or near the contour line to separate the workpiece along the contour line, wherein the infrared laser beam has an annular beam profile such that a greater distribution of cumulated energy from the infrared laser beam is located in areas adjacent to the contour line than directly on the contour line.2. The method of claim 1 , wherein an outer diameter of the annular beam profile is from about 0.5 mm to about 20 mm.3. The method of claim 2 , wherein an inner diameter of the annular beam profile is from about 5% to about 95% of the outer beam diameter.4. The method of claim 1 , wherein a greater distribution of cumulated energy from the infrared laser beam is located in areas adjacent to the contour line on both sides of the contour line than directly on the contour line.5. The method of claim 1 , wherein the infrared laser beam is centered on the contour line.6. The method of claim 1 , wherein the infrared laser beam is produced by a carbon dioxide laser claim 1 , a carbon monoxide laser claim 1 , a solid state laser claim 1 , a laser diode claim 1 , or combinations thereof.7. The method of claim 1 , wherein the workpiece comprises an alkaline earth boro-aluminosilicate glass claim 1 , sapphire claim 1 , fused silica claim 1 , or combinations ...

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Номер записи: 27
01-02-2018 дата публикации

PROCESSING 3D SHAPED TRANSPARENT BRITTLE SUBSTRATE

Номер: US20180029920A1
Автор: Marjanovic Sasha, Nieber Albert Roth, Piech Garrett Andrew, Tsuda Sergio, Wagner Robert Stephen
Принадлежит:

Methods are provided for laser processing arbitrary shapes of molded 3D thin transparent brittle parts from substrates with particular interest in substrates formed from strengthened or non-strengthened Corning Gorilla® glass (all codes). The developed laser methods can be tailored for manual separation of the parts from the panel or full laser separation by thermal stressing the desired profile. Methods can be used to form 3D surfaces with small radii of curvature. The method involves the utilization of an ultra-short pulse laser that may be optionally followed by a COlaser for fully automated separation. 1. A glass article having a 3D surface , the glass article having at least one edge having a plurality of defect lines extending at least 250 microns , the defect lines each having a diameter less than or equal to about 5 microns.2. The glass article of claim 1 , wherein the glass article comprises strengthened glass.3. The glass article of claim 1 , wherein the glass article comprises unstrengthened glass.4. The glass article of claim 1 , wherein the edge has an Ra surface roughness less than about 0.5 microns.5. The glass article of claim 1 , wherein the edge has subsurface damage up to a depth less than or equal to about 75 microns.6. The glass article of claim 1 , wherein a distance between the defect lines is less than or equal to about 7 microns. This application is a divisional of U.S. application Ser. No. 14/530,379 filed on Oct. 31, 2014, which claims the benefit of U.S. Provisional Application No. 61/917,127 filed on Dec. 17, 2013, U.S. Provisional Application No. 62/024,581 filed on Jul. 15, 2014, and U.S. Provisional Application No. 62/046,360 filed on Sep. 5, 2014; the entire disclosures of which are incorporated herein by reference.The next wave of consumer electronics products is incorporating not only software and hardware innovations, but also changes that have design and functional appeal. New products are being announced and released on a ...

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Номер записи: 28
02-02-2017 дата публикации

ABERRATION-CORRECTION METHOD, LASER PROCESSING METHOD USING SAID ABERRATION-CORRECTING METHOD, LASER IRRADIATION METHOD USING SAID ABERRATION-CORRECTING METHOD, ABERRATION-CORRECTING DEVICE AND ABERRATION-CORRECTING PROGRAM

Номер: US20170031158A1
Автор: Inoue Takashi, ITO Haruyasu, Matsumoto Naoya
Принадлежит:

In an aberration-correcting method according to an embodiment of the present invention, in an aberration-correcting method for a laser irradiation device which focuses a laser beam on the inside of a transparent medium , aberration of a laser beam is corrected so that a focal point of the laser beam is positioned within a range of aberration occurring inside the medium. This aberration range is not less than n×d and not more than n×d+Δs from an incidence plane of the medium , provided that the refractive index of the medium is defined as n, a depth from an incidence plane of the medium to the focus of the lens is defined as d, and aberration caused by the medium is defined as Δs. 110-. (canceled)11. A microscope for capturing an inside image of a sample , comprising:a light source configured to output illumination light,an illumination optical system including a spatial light modulator is configured to modulate the illumination light, and configured to irradiate an inside of a sample with the illumination light that is modulated by the spatial light modulator,a detection lens having an detection optical axis that intersects with an optical axis of the illumination optical system, anda light detector optically coupled to the detection lens and configured to capture an inside image of the sample.12. The microscope according to claim 11 , whereinthe illumination optical system includes a condenser lens optically coupled to the spatial light modulator.13. The microscope according to claim 12 , whereinthe condenser lens comprises an illumination objective lens.14. The microscope according to claim 12 , whereinthe illumination optical system includes relay lenses optically coupled to the spatial light modulator and the condenser lens.15. The microscope according to claim 12 , whereinthe spatial light modulator and an entrance pupil of the condenser lens are in an image forming relationship.16. The microscope according to claim 11 , whereinthe spatial light modulator ...

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Номер записи: 29
05-02-2015 дата публикации

High Connectivity Multiple Dimension Optical Network in Glass

Номер: US20150037032A1
Автор: Brunner Robert, LESSARD Stephane, Xu Qing
Принадлежит:

An optical communications system includes a first plurality of optical components having optical ports, a second plurality of optical components having optical ports and an optical cross-connect. The optical cross-connect includes a block of a single continuous construction and material having a first side adjacent the first optical components and a second side adjacent the second optical components, and a plurality of non-intersecting, continuous waveguides formed within the block and extending from the first side of the block to the second side of the block. The refractive index of each waveguide is different than the surrounding material of the block, and each waveguide changes direction at least once within the block. The waveguides are optically aligned with the optical ports of the first optical components at the first side of the block and with the optical ports of the second optical components at the second side of the block. 1. An optical communications system , comprising:a first plurality of optical components having optical ports;a second plurality of optical components having optical ports; and a block of a single continuous construction and material having a first side adjacent the first plurality of optical components and a second side adjacent the second plurality of optical components; and', 'a plurality of non-intersecting, continuous waveguides formed within the block and extending from the first side of the block to the second side of the block, the refractive index of each waveguide being different than the surrounding material of the block, each waveguide changing direction at least once within the block,, 'an optical cross-connect comprisingwherein the waveguides are optically aligned with the optical ports of the first plurality of optical components at the first side of the block and with the optical ports of the second plurality of optical components at the second side of the block.2. The optical communications system of claim 1 , wherein ...

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Номер записи: 30
05-02-2015 дата публикации

PROCESSING APPARATUS INCLUDING LASER BEAM APPLYING MECHANISM AND SEPARATING MEANS

Номер: US20150038062A1
Автор: KOBAYASHI Satoshi, UMEDA Yoshio, Yubira Yasuyoshi
Принадлежит:

A processing apparatus including a chuck table having a holding surface for rotatably holding a workpiece, a laser beam applying mechanism having a laser beam generating unit for generating a laser beam and focusing the laser beam to the inside of the workpiece held on the chuck table, a relatively moving unit for relatively moving the chuck table and the laser beam applying mechanism in a direction parallel to the holding surface of the chuck table while applying the laser beam to the workpiece to thereby form a modified layer inside of the workpiece, a separating unit for separating a part of the workpiece along the modified layer as a boundary formed inside the workpiece, and a grinding/polishing unit having a grinding/polishing wheel for grinding or polishing the modified layer left on the workpiece after separating the part and a spindle for rotatably mounting the grinding/polishing wheel. 1. A processing apparatus comprising:holding means having a holding surface for rotatably holding a workpiece;a laser beam applying mechanism having laser beam generating means for generating a laser beam and focusing means for focusing said laser beam generated by said laser beam generating means to the inside of said workpiece held by said holding means;relatively moving means for relatively moving said holding means and said laser beam applying mechanism in a direction parallel to said holding surface of said holding means while applying the laser beam to said workpiece to thereby form a modified layer inside of said workpiece;separating means for separating a part of said workpiece along said modified layer as a boundary formed inside said workpiece; andgrinding/polishing means having a grinding/polishing wheel for grinding or polishing said modified layer left on said workpiece after separating said part and a spindle for rotatably mounting said grinding/polishing wheel.2. The processing apparatus according to claim 1 , further comprisingpositioning means for selectively ...

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Номер записи: 31
09-02-2017 дата публикации

OPTICAL GLASS AND METHOD OF CUTTING GLASS SUBSTRATE

Номер: US20170036304A1
Автор: MASUDA Hidetaka
Принадлежит: Asahi Glass Company, Limited

Provided are a method of cutting a glass substrate which is capable of secure cutting by a simpler operation and an optical glass having high bending strength and dimension accuracy obtained by that method. The method of cutting the glass substrate comprising: forming selectively a plurality of reformed portions with a crack extending in the glass substrate from at least one of the plurality of reformed portions by radiating light to be focused inside the glass substrate so as to form a reformed region; and making a fracture occur in a thickness direction of the glass substrate along the reformed region so as to cut the glass substrate, wherein the crack has a tip portion at a depth of 3 to 20% of a thickness of the glass substrate from a cut surface, and an optical glass is obtained by the above cutting method. 1. An optical glass , comprising:a glass plate comprising a principal surface and an end surface;a reformed region formed on the end surface;a plurality of reformed portions formed by light radiated to be focused thereto in the reformed region; anda crack extending from the reformed portion on the end surface, having a tip portion at a depth of 3 to 20% of a plate thickness of the glass plate from the end surface.2. The optical glass according to claim 1 ,wherein a width in a plate thickness direction of the reformed region is from 13 to 50% of the plate thickness of the glass plate.3. The optical glass according to claim 1 ,wherein the reformed region is formed apart from the principal surface of the optical glass.4. The optical glass according to claim 1 ,wherein the plurality of reformed portions are formed at intervals of 3.0 to 38 μm.5. The optical glass according to claim 1 ,{'sup': '1/2', 'wherein a fracture toughness of the optical glass is from 0.2 to 0.74 MPa·m.'}6. The optical glass according to claim 1 ,{'sup': −7', '−7, 'wherein a thermal expansion coefficient of the optical glass is from 75×10to 150×10.'}7. A method of cutting a glass substrate ...

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Номер записи: 32
09-02-2017 дата публикации

METHODS OF CUTTING GLASS USING A LASER

Номер: US20170036942A1
Автор: Abramov Anatoli Anatolyevich, Zhou Naiyue
Принадлежит:

A method of cutting a glass article includes translating a laser beam relative to a first surface of the glass article. The laser beam includes a beam waist having a center. The center of the beam waist of the laser beam is positioned at or below a second surface of the glass article. The laser beam creates a plurality of defects along a score line in the glass article such that the plurality of defects extends a distance into the glass article, and at least some individual defects of the plurality of defects are non-orthogonal to the first surface of the glass article and are biased in a direction of translation of the laser beam. Glass articles having edge defects are also disclosed. 115-. (canceled)17. The glass article of claim 16 , wherein the plurality of defects extends into a majority of the thickness t of the glass article.18. The glass article of claim 16 , wherein the glass article comprises an ion-exchanged glass article having a first strengthened surface layer and a second strengthened surface layer under a compressive stress and extending from a surface of the ion-exchanged glass article to a depth of layer claim 16 , and a central region between the first strengthened surface layer and the second strengthened surface layer that is under tensile stress.19. The glass article of claim 18 , wherein the distance that at least a portion of the plurality of defects extends into the glass article is greater than the depth of layer.20. The glass article of claim 18 , wherein the central region has a tensile stress between about 20 and about 30 megapascals claim 18 , and the plurality of defects extends about halfway into the thickness of the ion-exchanged glass article. The present application is a divisional of, and claims the benefit of priority to, U.S. patent application Ser. No. 13/836,717 filed on Mar. 15, 2013, which claims the benefit of priority of U.S. Patent Application Ser. No. 61/655,690 entitled “Methods of Cutting Glass Using a Nanosecond Laser ...

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Номер записи: 33
07-02-2019 дата публикации

LASER CUTTING STRENGTHENED GLASS

Номер: US20190039940A1
Автор: Corden Barry B., KRASNOV Alexey
Принадлежит:

A laser beam(s) is used to cut heat strengthened (e.g., thermally tempered) glass. The heat strengthened glass may be coated in certain example embodiments, such as with a multi-layer low-emissivity (low-E) coating and/or an antireflective (AR) coating. It has been found that focusing the laser beam(s) in a tensile stress zone, in a central area of the heat strengthened glass (as opposed to in a compression stress zone), during a cutting process provides for improved cutting characteristics to avoid and/or reduce fragmenting of the glass and to provide for a clean cut edge. The wavelength emitted from the laser may be tailored based on spectral characteristics of the coating. 1. A method of cutting heat strengthened glass , the method comprising:having a sheet of heat strengthened glass comprising a compressive stress region and a tensile stress region, the compressive stress region being located between a first major surface of the glass and the tensile stress region;cutting the sheet of heat strengthened glass, said cutting comprising focusing a laser beam in the tensile stress region of the sheet of heat strengthened glass.2. The method of claim 1 , wherein the laser beam passes through the first major surface of the glass before focusing in the tensile stress region.3. The method of claim 1 , wherein said focusing the laser beam in the tensile stress region causes at least one filament to form at least in the tensile stress region of the glass.4. The method of claim 3 , wherein the filament extends toward a second major surface of the glass that is opposite the first major surface.5. The method of claim 1 , further comprising claim 1 , after said focusing the laser beam in the tensile stress region of the sheet of heat strengthened glass claim 1 , applying mechanical force in order to fully separate pieces of the sheet.6. The method of claim 1 , wherein the sheet of heat strengthened glass is thermally tempered.7. The method of claim 6 , further comprising ...

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Номер записи: 34
18-02-2016 дата публикации

LASER MACHINING DEVICE AND LASER MACHINING METHOD

Номер: US20160045979A1
Автор: Araki Keisuke, HIROSE Tsubasa, Kawaguchi Daisuke
Принадлежит:

A laser processing device comprises a laser light source emitting the laser light, a spatial light modulator modulating the laser light emitted from the laser light source, and a converging optical system converging the laser light modulated by the spatial light modulator at the object. A plurality of rows of modified regions include at least an entrance-surface-side modified region located on the laser light entrance surface side, an opposite-surface-side modified region located on the opposite surface side of the laser light entrance surface, and a middle modified region located between the entrance-surface-side modified region and opposite-surface-side modified region. When forming the middle modified region, the spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction. When forming the entrance-surface-side modified region and opposite-surface-side modified region, the spatial light modulator is restrained from displaying the axicon lens pattern as the modulation pattern. 1. A laser processing device for converging laser light at an object to be processed so as to form a plurality of rows of modified regions along a laser light irradiation direction within the object along a line to cut , the laser processing device comprising:a laser light source emitting the laser light;a spatial light modulator modulating the laser light emitted from the laser light source; anda converging optical system converging the laser light modulated by the spatial light modulator at the object;wherein the plurality of rows of modified regions include at least:an entrance-surface-side modified region located on the laser light entrance surface side;an opposite-surface-side modified region located on the opposite surface side of the laser light entrance surface; anda middle modified region located between the entrance-surface-side ...

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Номер записи: 35
15-02-2018 дата публикации

SiC WAFER PRODUCING METHOD

Номер: US20180043468A1
Автор: Hirata Kazuya
Принадлежит:

An SiC wafer is produced from a single crystal SiC ingot by a method that includes forming a plurality of breakable layers constituting a separation surface in the SiC ingot, each breakable layer including a modified layer and cracks extending from the modified layer along a c-plane, and separating part of the SiC ingot along the separation surface as an interface to thereby produce the SiC wafer. In forming the separation surface, the energy density of a pulsed laser beam is set to an energy density not causing the formation of an upper damage layer above the breakable layer previously formed due to the reflection of the pulsed laser beam from the breakable layer and not causing the formation of a lower damage layer below the breakable layer previously formed due to the transmission of the pulsed laser beam through the breakable layer. 1. An SiC wafer producing method for producing an SiC wafer from a single crystal SiC ingot having a first surface , a second surface opposite to said first surface , a c-axis extending from said first surface to said second surface , and a c-plane perpendicular to said c-axis , said c-axis being inclined by an off angle with respect to a normal to said first surface , said off angle being formed between said c-plane and said first surface , said SiC wafer producing method comprising:a breakable layer forming step of setting a focal point of a pulsed laser beam having a transmission wavelength to SiC inside said SiC ingot at a predetermined depth from said first surface, said predetermined depth corresponding to the thickness of said SiC wafer to be produced, and next applying said pulsed laser beam to said SiC ingot as relatively moving said SiC ingot and said focal point in a first direction perpendicular to a second direction where said off angle is formed, thereby forming a breakable layer inside said SiC ingot at said predetermined depth, said breakable layer including a modified layer extending in said first direction and ...

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Номер записи: 36
15-02-2018 дата публикации

SYSTEMS AND METHODS FOR MODIFYING ACOUSTIC WAVES BASED ON SELECTIVE HEATING

Номер: US20180043473A1
Автор: Helvajian Henry, Manzo Anthony J.
Принадлежит:

An acoustic wave is modified by initiating excitation of an acoustic wave from a first location on a substrate to a second location on the substrate and selectively heating the second location of the substrate so as to alter a property of the second location. With such arrangements, the altered property of the second location modifies the acoustic wave to result in a modified acoustic wave that is propagated from the second location to a third location on the substrate. Related apparatus, systems, and methods are also described. 1. A method for modifying an acoustic wave comprising:initiating excitation of an acoustic wave from a first location on a substrate to a second location on the substrate; andselectively heating the second location of the substrate so as to alter a property of the second location, the altered property of the second location modifying the acoustic wave to result in a modified acoustic wave that is propagated from the second location to a third location on the substrate.2. The method of claim 1 , wherein the selective heating is initiated subsequent or prior to the initiation of excitation of the acoustic wave but prior to the acoustic wave arriving at the second location on the substrate.3. The method of claim 1 , further comprising:selectively heating the third location of the substrate so as to alter a property of the third location, the altered property of the third location further modifying the acoustic wave to result in a further modified acoustic wave that is propagated from the third location to a fourth location on the substrate.4. The method of claim 1 , wherein the acoustic wave includes a surface acoustic wave.5. The method of claim 1 , wherein the acoustic wave includes a bulk acoustic wave.6. The method of claim 1 , wherein the altered property of the second location is selected from the group consisting of a thermal property claim 1 , a mechanical property claim 1 , and a chemical property.7. The method of claim 1 , wherein the ...

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Номер записи: 37
16-02-2017 дата публикации

PORTABLE DEFECT MITIGATOR FOR ELECTROCHROMIC WINDOWS

Номер: US20170044057A1
Автор: Baxter Bruce, Rozbicki Robert T.
Принадлежит:

Portable apparatus for identifying and mitigating defects in electronic devices disposed on substrates or windows are disclosed herein. Such defects can be visually perceived by the end user. The substrates or windows may include flat panel displays, photovoltaic windows, electrochromic devices, and the like, particularly electrochromic windows. 131-. (canceled)32. A portable apparatus for mitigating a defect in an electrochromic device on a window , the portable apparatus comprising:a first mechanism configured to detect the defect;a second mechanism configured to mitigate the defect;a third mechanism configured to align the portable apparatus with the window; andan illumination mechanism configured to illuminate the defect in the electrochromic device on the window and to substantially block energy from the second mechanism with a backstop when the second mechanism is mitigating the defect, the illumination mechanism being positioned on a first side of the window, and the first mechanism, the second mechanism, and the third mechanism being positioned on a second side of the window, opposite the first side.33. The portable apparatus of claim 32 , wherein:the first mechanism comprises at least one of a microscope, a camera, and a photo detector, andthe second mechanism comprises at least one of a laser, a heat source, an induction coil, a microwave source, and a voltage source.34. The portable apparatus of claim 32 , wherein the portable apparatus is configured to mount to the window.35. The portable apparatus of claim 32 , wherein the third mechanism includes a movable stage configured to align the first and second mechanisms.36. The portable apparatus of claim 32 , configured to mount to the window using suction.37. The portable apparatus of claim 32 , wherein the first mechanism employs at least one of reflection claim 32 , scattering claim 32 , and refraction to identify a defect signature.38. The portable apparatus of claim 32 , further comprising a controller ...

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Номер записи: 38
15-02-2018 дата публикации

EDGE CHAMFERING METHODS

Номер: US20180044219A1
Автор: Marjanovic Sasha, Nieber Albert Roth, Piech Garrett Andrew, Schillinger Helmut, Tsuda Sergio, Wagner Robert Stephen
Принадлежит:

Processes of chamfering and/or beveling an edge of a glass or other substrate of arbitrary shape using lasers are described herein. Three general methods to produce chamfers on glass substrates are disclosed. The first method involves cutting the edge with the desired chamfer shape utilizing an ultra-short pulse laser. Treatment with the ultra-short laser may be optionally followed by a COlaser for fully automated separation. The second method is based on thermal stress peeling of a sharp edge corner, and it has been demonstrated to work with different combination of an ultrashort pulse and/or COlasers. A third method relies on stresses induced by ion exchange to effect separation of material along a fault line produced by an ultra-short laser to form a chamfered edge of desired shape. 1. A glass article including at least one chamfered edge having a plurality of defect lines extending at least 250 μm , the defect lines each having a diameter less than or equal to about 5μm.2. The glass article of claim 1 , wherein the glass article comprises chemically strengthened glass.3. The glass article of claim 1 , wherein the glass article comprises non-strengthened glass.4. The glass article of claim 1 , wherein the chamfered edge has an Ra surface roughness less than about 0.5 μm.5. The glass article of claim 1 , wherein the chamfered edge has subsurface damage up to a depth less than or equal to about 75 μm. This application is a divisional of U.S. patent application Ser. No. 14/530,410 filed Oct. 31, 2014, which claims the benefit of U.S. Provisional Application No. 61/917,213 filed on Dec. 17, 2013 as well as the benefit of U.S. Provisional Application No. 62/022,885 filed on Jul. 10, 2014 the entire disclosures of which are incorporated herein by reference.In all cases where glass panels are cut for applications in architectural, automotive, consumer electronics, to mention a few areas, there will be edges, which will very likely require attention. There are as many ...

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Номер записи: 39
25-02-2016 дата публикации

LASER MACHINING DEVICE AND LASER MACHINING METHOD

Номер: US20160052083A1
Автор: Araki Keisuke, HIROSE Tsubasa, Kawaguchi Daisuke
Принадлежит: HAMAMATSU PHOTONICS K.K.

A laser processing device converges laser light at an object to be processed having a silicon part containing silicon mounted on a glass part containing glass with a resin part interposed therebetween so as to form a modified region within the object along a line to cut. The laser processing device comprises a laser light source emitting the laser light, a spatial light modulator modulating the laser light emitted from the laser light source, and a converging optical system converging the laser light modulated by the spatial light modulator at the object. When forming the modified region in the glass part, the spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction. 1. A laser processing device for converging laser light at an object to be processed having a silicon part containing silicon mounted on a glass part containing glass with a resin part interposed therebetween so as to form a modified region within the object along a line to cut , the laser processing device comprising:a laser light source emitting the laser light;a spatial light modulator modulating the laser light emitted from the laser light source; anda converging optical system converging the laser light modulated by the spatial light modulator at the object;wherein, when forming the modified region in the glass part, the spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction.2. A laser processing device according to claim 1 , wherein the laser processing device forms a plurality of modified spots within the object along the line and lets a plurality of the modified regions form the modified region;wherein, when forming the modified region in the glass part, the spatial light modulator forms ...

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Номер записи: 40
25-02-2016 дата публикации

LASER MACHINING DEVICE AND LASER MACHINING METHOD

Номер: US20160052084A1
Автор: Araki Keisuke, HIROSE Tsubasa, Kawaguchi Daisuke, Nakano Makoto, SUGIO Ryota
Принадлежит: HAMAMATSU PHOTONICS K.K.

The laser processing device comprises a laser light source emitting a laser light, a converging optical system converging the laser light at an object to be processed, and an aberration providing part for imparting an aberration to the laser light converged at the object by the converging optical system. In an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object, the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range and an intensity distribution in the optical axis direction with a continuous undulation in the elongated range. 1. A laser processing device for forming a modified region in an object to be processed by converging laser light at the object , the laser processing device comprising:a laser light source emitting the laser light;a converging optical system converging the laser light emitted from the laser light source at the object; andan aberration providing part imparting an aberration to the laser light converged at the object by the converging optical system;wherein, in an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object,the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range and an intensity distribution in the optical axis direction with a continuous undulation in the elongated range.2. A laser processing device ...

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Номер записи: 41
25-02-2016 дата публикации

LASER MACHINING DEVICE AND LASER MACHINING METHOD

Номер: US20160052085A1
Автор: Araki Keisuke, HIROSE Tsubasa, Kawaguchi Daisuke, Nakano Makoto, SUGIO Ryota
Принадлежит:

A laser processing device converges laser light at an object to be processed so as to form a modified region within the object along a line to cut. The laser processing device comprises a laser light source emitting the laser light, a spatial light modulator modulating the laser light emitted from the laser light source, and a converging optical system converging the laser light modulated by the spatial light modulator at the object. The spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction. 1. A laser processing device for converging laser light at an object to be processed so as to form a modified region within the object along a line to cut , the laser processing device comprising:a laser light source emitting the laser light;a spatial light modulator modulating the laser light emitted from the laser light source; anda converging optical system converging the laser light modulated by the spatial light modulator at the object;wherein the spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction.2. A laser processing device according to claim 1 , wherein the laser processing device forms a plurality of modified spots within the object along the line and lets a plurality of the modified regions form the modified region;wherein the spatial light modulator forms modified dots respectively at the plurality of positions juxtaposed close to each other along the laser light irradiation direction; andwherein a plurality of the modified dots constitute the modified spot elongated in the laser light irradiation direction.3. A laser processing device according to claim 1 , wherein claim 1 , in a display part of the spatial light modulator claim 1 , the axicon lens ...

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Номер записи: 42
25-02-2016 дата публикации

LASER MACHINING DEVICE AND LASER MACHINING METHOD

Номер: US20160052088A1
Автор: Araki Keisuke, HIROSE Tsubasa, Kawaguchi Daisuke, Nakano Makoto, SUGIO Ryota
Принадлежит:

A laser processing device forms a modified region in an object to be processed by converging ultrashort pulse laser light at the object and comprises a laser light source emitting the laser light, a converging optical system converging the laser light emitted from the laser light source at the object, and an aberration providing part imparting an aberration to the laser light converged at the object by the converging optical system. In an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object, the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range and an intensity distribution in the optical axis direction with a continuous undulation in the elongated range. 1: A laser processing device for forming a modified region in an object to be processed by converging ultrashort pulse laser light at the object , the laser processing device comprising:a laser light source emitting the laser light;a converging optical system converging the laser light emitted from the laser light source at the object; andan aberration providing part imparting an aberration to the laser light converged at the object by the converging optical system;wherein, in an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object,the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range ...

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Номер записи: 43
25-02-2016 дата публикации

METHOD FOR REALIZING AN OPTICAL WAVEGUIDE IN A SUBSTRATE BY MEANS OF A FEMTOSECOND LASER

Номер: US20160054522A1
Автор: CORRIELLI Giacomo, Crespi Andrea, Osellame Roberto, Sciarrino Fabio
Принадлежит:

A method for realizing an optical waveguide in a substrate by means of a femtosecond laser system, the waveguide including a birefringence axis tilted by a predetermined angle for at least a segment, is disclosed. The method includes preparing a substrate including a free surface, focusing a femtosecond laser beam into the substrate, in order to induce a refractive index modification of a volume of such substrate around the focal region. The method further includes varying a propagation direction of the femtosecond laser beam to reach a propagation direction describing a predetermined non-vanishing angle with respect to the normal to the free surface of the substrate, and translating the focal region with respect to the substrate, in order to generate the waveguide segment. 1. A method of fabricating a waveguide in a substrate using a femtosecond laser system , such waveguide having a birefringence axis tilted at a fixed angle for at least a segment , comprising:preparing a substrate in which the waveguide is to be fabricated, the substrate having a free surface upon which a femtosecond pulsed laser beam is configured to impinge;positioning an immersion lens apt to focus the laser beam in the substrate;introducing a first optical element;making the laser beam impinge on the first optical element, which directs the laser beam towards the immersion lens;focusing the femtosecond pulsed laser beam at a given depth inside the substrate, in order to induce a refractive index change in a volume of said substrate around the focus, wherein the laser beam propagates in the substrate along a direction, said focusing including making the laser beam impinge on said-immersion lens in a first position;varying the propagation direction of the laser beam in the substrate, maintaining the beam focused, translating or rotating the first optical element, in order to operate a translation of the laser beam, to modify the impinging position of the laser beam on the immersion lens, in ...

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Номер записи: 44
03-03-2016 дата публикации

HYBRID MECHANICAL-THERMAL PROCESS FOR COATING REMOVAL

Номер: US20160059346A1
Автор: Bruck Gerald J., Kamel Ahmed
Принадлежит:

A method of removing a coating () from a substrate () by applying both vibratory mechanical energy () and an energy beam () to the coating. Localized combination of thermally and mechanically induced stressed in the coating result in the formation of cracks () in the coating. 1. A method for removing a coating from a substrate , the method comprising introducing vibratory mechanical energy into the substrate while directing an energy beam onto the coating in a manner effective to fracture the coating.2. The method of claim 1 , further comprising:controlling the vibratory mechanical energy to form a standing wave in the substrate;directing the energy beam into a trough of the standing wave to heat a portion of the coating; andcontrolling the vibratory mechanical energy to move the standing wave such that the heated portion of the coating is on a crest of the moved standing wave.3. The method of claim 1 , further comprising:controlling the vibratory mechanical energy to form a standing wave in the substrate;directing the energy beam onto a crest of the standing wave to heat a portion of the coating; andcontrolling the vibratory mechanical energy to move the standing wave such that the heated portion of the coating is in a valley of the moved standing wave.4. The method of claim 1 , further comprising detecting a location of a wave in the substrate created by the vibratory mechanical energy and controlling the energy beam in response to the detected location of the standing wave.5. The method of claim 1 , further comprising controlling the vibratory mechanical energy effective to induce a wave to move across the substrate.6. The method of claim 5 , further comprising controlling the energy beam responsive to a path of the wave moving across the substrate.7. The method of claim 1 , further comprising selecting parameters of the energy beam such that a sufficient portion of the beam energy is absorbed by the coating to raise a temperature of the coating to above a ...

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Номер записи: 45
01-03-2018 дата публикации

METHOD OF PRODUCING SiC WAFER

Номер: US20180056440A1
Автор: Hirata Kazuya, YAMAMOTO RYOHEI
Принадлежит:

An SiC wafer is generated from an SiC ingot by a peel-off plane generating step for generating a peel-off plane by forming a separation layer made up of a modified layer, and cracks extending from the modified layer along a c-plane, a plurality of times by indexing-feeding a focused point of a pulsed laser beam and the SiC ingot relative to each other in a direction in which an off-angle is formed, thereby forming a plurality of separation layers to generate the peel-off plane. The peel-off plane generating step includes relatively moving the focused point from an end to an opposite end of the SiC ingot in a forward stroke and relatively moving the focused point from the opposite end to the end of the SiC ingot in a backward stroke to trace back the separation layer that has already been formed in the forward stroke. 1a peel-off plane forming step of forming a peel-off plane in the SiC ingot by performing a separation layer forming step by positioning a focused point of a pulsed laser beam having a wavelength with which SiC is transmittable in the SiC ingot at a depth, from the first surface, corresponding to the thickness of a wafer to be produced from the SiC ingot, and applying a pulsed laser beam to the SiC ingot while the SiC ingot and the focused point are relatively processing-fed in a first direction perpendicular to a second direction in which the off-angle is formed, thereby forming a separation layer made up of a modified layer where SiC is separated into Si and C by a pulsed laser beam applied thereto and a pulsed laser beam applied next thereto is absorbed by the previously formed C, separating SiC into Si and C in a chain reaction, and cracks extending from the modified layer along the c-plane, the separation layer forming step being performed a plurality of times by indexing-feeding the SiC ingot and the focused point relatively to each other in the second direction in which the off-angle is formed, thereby forming a plurality of separation layers to ...

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Номер записи: 46
03-03-2016 дата публикации

METHOD AND APPARATUS FOR THINNING WAFER

Номер: US20160064229A1
Автор: KIM Sung Wook
Принадлежит: HANWHA TECHWIN CO., LTD.

A method and an apparatus for thinning a wafer are provided. The method for thinning a wafer, according to one embodiment of the present invention, comprises the steps of: irradiating a line beam focused at a specific depth of the wafer; scanning the wafer by using the line beam so as to form an interface at the specific depth of the wafer; and cleaving the wafer on which the interface is formed into a pattern wafer and a dummy wafer. 1. A method for thinning a wafer , comprising:irradiating a line beam focused at a specific depth of a wafer;scanning the wafer by using the line beam and forming an interface at the specific depth of the wafer; andcleaving the wafer in which the interface is formed into a pattern wafer and a dummy wafer.2. The method of claim 1 , wherein the irradiating of the line beam includes:irradiating a laser beam; andshaping the laser beam to generate the line beam.3. The method of claim 1 , wherein the forming of the interface includes:adjusting at least one of a scan rate of the line beam or an intensity of the line beam; andforming grid pattern lines at the specific depth of the wafer.4. The method of claim 1 , further comprising: forming a circuit pattern on the dummy pattern and recycling the dummy pattern.5. An apparatus for thinning a wafer claim 1 , comprising:a wafer support unit supporting and fixing one surface of a wafer thereby;a laser light source unit irradiating a laser beam;a line beam-optical unit generating a line beam by shaping the laser beam, and irradiating the line beam to a specific depth of the wafer in accordance with a size of the wafer;a gantry unit transferring at least one of the line beam-optical unit or the wafer support unit in an XY direction in order to scan the wafer using the line beam;a wafer fixing unit fixing the other surface of the wafer; anda cleaving and transferring unit transferring the wafer support unit and the wafer fixing unit in opposite directions and cleaving the wafer into a pattern wafer ...

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Номер записи: 47
01-03-2018 дата публикации

LASER CUTTING OF MATERIALS WITH INTENSITY MAPPING OPTICAL SYSTEM

Номер: US20180062342A1
Автор: Comstock, Gollier Jaques, II Lovell Elgin, Nguyen Thien An Thi, Piech Garrett Andrew, Westcott Mark Ranney
Принадлежит:

A method of laser processing a workpiece, the method comprising focusing a pulsed laser beam into a laser beam focal line directed into the workpiece, the laser beam focal line generating an induced absorption within the material, and the induced absorption producing a defect line along the laser beam focal line within the workpiece, wherein the focal line has length L and a substantially uniform intensity profile such that the peak intensity distribution over at least 85% of the length L of the focal line does not vary by more 40%, and preferably by no more than 30 or 20% from its mean peak intensity. 1. A method of laser processing a workpiece , the method comprising:focusing a pulsed laser beam into a laser beam focal line directed into the workpiece, the laser beam focal line generating an induced absorption within the material, and the induced absorption producing a defect line along the laser beam focal line within the workpiece,wherein said focal line having length L and a substantially uniform intensity profile such that the peak intensity distribution over at least 85% of the length L of the focal line does not vary by more 20% from mean peak intensity.2. The method of claim 1 , further utilizing an optical system comprising at least one aspheric surface.3. The method of claim 1 , further utilizing an optical system comprising at least two aspheric surfaces.4. The method of claim 2 , wherein said aspheric surface is a curved surface of a refractive or a reflective element.5. The method of claim 1 , wherein said focal line has a substantially uniform intensity profile such that the peak intensity distribution over at least 90% of the length L of the focal line does not vary by more 20% from mean peak intensity.6. The method of claim 1 , wherein said focal line has a substantially uniform intensity profile such that the intensity distribution over the length L of the focal line does not vary by more 20% from mean peak intensity.7. The method of claim 1 , ...

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Номер записи: 48
10-03-2016 дата публикации

TRANSPARENT MATERIAL PROCESSING WITH AN ULTRASHORT PULSE LASER

Номер: US20160067822A1
Автор: ARAI Alan Y., Bovatsek James, CHO Gyu C., Xu Jingzhou, YOSHIDA Makoto, Yoshino Fumiyo, ZHANG Haibin
Принадлежит: IMRA AMERICA, INC.

Methods, devices, and systems for ultrashort pulse laser processing of optically transparent materials are disclosed, with example applications in scribing, marking, welding, and joining. For example, ultrashort laser pulses create scribe features with one pass of the laser beam across the material, with at least one of the scribe features being formed below the surface of the material. Slightly modifying the ultrashort pulse laser processing conditions produces sub-surface marks. When properly arranged, these marks are clearly visible with correctly aligned illumination. Reflective marks may also be formed with control of laser parameters. A transparent material other than glass may be utilized. A method for welding transparent materials uses ultrashort laser pulses to create a bond through localized heating. In some embodiments of transparent material processing, a multifocus beam generator simultaneously forms multiple beam waists spaced depthwise relative to the transparent material, thereby increasing processing speed. 1. A laser-based system for modification of a transparent material , comprising:a pulsed laser apparatus generating a pulsed laser output comprising at least one pulse having a pulse width in the range from about 10 fs to 100 ps;a multifocus beam generator receiving said output, said generator configured to form a plurality of focused beams using said pulsed laser output, each focused beam having a beam waist, said beam waists spaced depthwise relative to said material, at least one beam waist of said plurality of focused beams being within said material and causing modification of said material, said plurality of focused beams comprising different polarizations or different wavelengths generated in different optical paths;a motion system to produce relative movement between said material and said focused beams; anda controller coupled to said pulsed laser apparatus and to said motion system, and controlling said system in such a way that said ...

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Номер записи: 49
08-03-2018 дата публикации

Laminate structure for resealable package

Номер: US20180065788A1
Автор: Jacob Donald Prue Branyon
Принадлежит: Sonoco Development Inc

A laminate structure, package, and associated method of manufacturing are described, where the laminate structure includes a first film layer having an uncut laser-distorted region, a second film layer having an inner laser score line laminated to the first film layer, and a third film layer having an outer score line laminated to the second film layer. The inner laser score line is in line with the laser-distorted region, and the outer score line is offset from the inner laser score line and the laser-distorted region. When a consumer peels back the third film layer via the outer score line, the first film layer breaks along the laser-distorted region to form a first film layer cut line continuous with the inner laser score line, allowing the first film layer and the second film layer to be moved together with the third film layer for opening the package.

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Номер записи: 50
10-03-2016 дата публикации

METHODS AND SYSTEMS FOR PROCESSING MATERIALS, INCLUDING SHAPE MEMORY MATERIALS

Номер: US20160068938A1
Автор: KHAN Mohammad Ibrahem, ZHOU Yunhong Norman
Принадлежит:

A method for treating a material comprising: applying energy to a predetermined portion of the material in a controlled manner such that the local chemistry of the predetermined portion is altered to provide a predetermined result. When the material is a shape memory material, the predetermined result may be to provide an additional memory to the predetermined portion or to alter the pseudo-elastic properties of the shape memory material. In other examples, which are not necessarily restricted to shape memory materials, the process may be used to adjust the concentration of components at the surface to allow the formation of an oxide layer at the surface of the material to provide corrosion resistance; to remove contaminants from the material; to adjust surface texture; or to generate at least one additional phase particle in the material to provide a nucleation site for grain growth, which in turn, can strengthen the material. 1. A method for treating a material comprising:applying energy to a predetermined portion of the material in a controlled manner such that the local chemistry of the predetermined portion is altered to provide a predetermined result.2. The method of wherein the applying energy comprises processing the predetermined portion with a laser.3. The method of wherein the processing the predetermined portion with a laser comprises:selecting a power, beam size, and movement speed for the laser to produce the predetermined result;focusing the laser on a subset of the predetermined portion; andadjusting the spatial relationship of the laser and the material such that a beam from the laser contacts all of the predetermined portion.4. The method of wherein the laser is operated in a pulsed fashion to provide shorter bursts of energy to control the application of energy.5. The method of claim 1 , wherein the applied energy is controlled to reduce conduction outside the predetermined portion of the material.6. The method of claim 1 , wherein the material is ...

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Номер записи: 51
08-03-2018 дата публикации

Laser processing method and laser processing apparatus

Номер: US20180068897A1
Автор: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Toshimitsu Wakuda
Принадлежит: Hamamatsu Photonics KK

A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein at pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

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Номер записи: 52
19-03-2015 дата публикации

METHOD FOR CUTTING TOUGHENED GLASS PLATE

Номер: US20150075221A1
Автор: Kawaguchi Daisuke, NAGASAWA Ikuo
Принадлежит:

A method for cutting a strengthened glass sheet according to a first embodiment of the present invention includes: a step of collecting and scanning laser light in an intermediate layer, thereby forming a first reformed region along a first cutting-scheduled line; and a step of applying an external force to propagate a crack from the first reformed region as a start point in a thickness direction of the strengthened glass sheet, thereby dividing the strengthened glass sheet. In the step of forming the first reformed region, a width d1 (mm) of the first reformed region in the thickness direction is set to d1<2×10×K/{π×(CT)} based on a fracture toughness K(MPa·√m) of the strengthened glass sheet and the tensile stress CT (MPa) remaining in the intermediate layer. 1. A method for cutting a strengthened glass sheet comprising a front surface layer in which a compressive stress remains and a back surface layer in which a compressive stress remains , and an intermediate layer formed between the front surface layer and the back surface layer in which a tensile stress remains , the method comprising:a step of collecting and scanning laser light in the intermediate layer, thereby forming a first reformed region along a first cutting-scheduled line; anda step of applying an external force to propagate a crack from the first reformed region as a start point in a thickness direction of the strengthened glass sheet, thereby dividing the strengthened glass sheet,wherein, in the step of forming the first reformed region,{'sub': c', 'c, 'sup': 3', '2', '2, 'in a case where a fracture toughness of the strengthened glass sheet is represented by K(MPa·√m), the tensile stress remaining in the intermediate layer is represented by CT (MPa), and a width of the first reformed region in the thickness direction is represented by d1 (mm), a value of d1 is set to be smaller than 2×10×K/{π×(CT)}.'}2. The method for cutting a strengthened glass sheet according to claim 1 , wherein claim 1 , in ...

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Номер записи: 53
17-03-2016 дата публикации

LASER PROCESSING APPARATUS

Номер: US20160074959A1
Автор: Maeda Tsutomu, Ohsuga Kiyoshi
Принадлежит:

A laser processing apparatus is provided wherein a laser beam of a wavelength which passes through a wafer having a surface on which a plurality of devices are disposed is irradiated along a schedule division line to separate the adjacent devices from each other to form a modification layer which continuously extends in a given length in the inside of the wafer. A mark portion is displayed in an overlapping relationship with a picked up image obtained by image pickup of a wafer on a display unit. If the mark portion is moved to a desired position of the picked up image displayed on the display unit, then coordinates which correspond to the desired position of the picked up image are stored as a start point or an end portion of a scheduled division line, along which the modification layer is to be formed, into a storage unit. 1a chuck table configured to hold a wafer thereon;laser beam irradiation means for irradiating the laser beam on the wafer held on the chuck table;moving means for moving the chuck table and the laser beam irradiation means relative to each other in a processing feeding direction and an indexing feeding direction;display means for displaying a picked up image obtained by image pickup of the wafer held on the chuck table;inputting means for inputting a processing condition for processing of the wafer; andstorage means for storing the processing condition inputted by the inputting means;a mark portion being displayed in an overlapping relationship with the picked up image on the display means;coordinates which correspond to a desired position of the picked up image displayed on the display means when the mark portion is moved to the desired position of the picked up image being stored as a start point or an end portion of a scheduled division line, along which the modification layer is to be formed, into the storage means.. A laser processing apparatus wherein a laser beam of a wavelength which passes through a wafer having a surface on which a ...

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Номер записи: 54
17-03-2016 дата публикации

SiC INGOT SLICING METHOD

Номер: US20160074960A1
Автор: Hirata Kazuya, Nishino Yoko
Принадлежит:

Disclosed herein is an SiC ingot slicing method including: an initial separation layer formation step for scanning a focal point of a laser beam parallel to an end face of the SiC ingot along a scheduled separation plane, and forming a separation layer at a position at a distance from the end face; a repetition step for sequentially moving, after the initial separation layer formation step, the focal point by the distance equal to the thickness of an SiC plate from the separation layer toward the end face, scanning the focal point parallel to the end face, repeating the formation of the separation layer, and forming the plurality of separation layers; and a separation step for applying an external force to the plurality of separation layers formed by the repetition step, peeling off the SiC plates starting from the separation layers, and acquiring the plurality of SiC plates. 1. An SiC ingot slicing method comprising:an initial separation layer formation step for causing a laser beam at a wavelength that transmits through the SiC ingot to enter the SiC ingot from an end face thereof, forming a focal point inside the SiC ingot, scanning the focal point in a planar manner along a scheduled separation plane parallel to the end face to thereby form a separation layer at a depth corresponding to the scheduled separation plane;a repetition step for sequentially moving, after the initial separation layer formation step, the focal point by a distance equal to a thickness of an SiC plate to be peeled off from the separation layer toward the end face, scanning the focal point parallel to the end face in a planar manner to thereby form a plurality of separation layers; anda separation step for applying, after the repetition step, an external force to the plurality of separation layers formed by the repetition step, separating the SiC plates starting from the separation layers, and acquiring the plurality of SiC plates.2. The SiC ingot slicing method of claim 1 , further ...

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Номер записи: 55
15-03-2018 дата публикации

Wafer perforating device

Номер: US20180076060A1
Автор: Kyoung Whan OH, Min Seok MOON, Seung Hwan Lee, Won Ki Park, Won Yup KO, Yeon Woo CHOI, Yong Won Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A wafer perforating device includes a chuck stage configured to receive a wafer, a housing spaced apart in a vertical direction on the chuck stage, wherein at least one of the housing and the chuck stage moves in a first horizontal direction, and the housing and the chuck stage intersect each other on the first direction, a displacement sensor fixed within the housing and configured to measure a displacement with a surface of the wafer at a perforating point spaced apart periodically in the first direction of the wafer and a laser module fixed within the housing and configured to irradiate a laser into a perforating depth determined according to the displacement at the perforating point. The displacement sensor determines whether an upper particle and a lower particle are present at the perforating point by considering a step height of the displacement, and ignores the displacement of the perforating point with the presence of an upper particle.

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Номер записи: 56
22-03-2018 дата публикации

METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT

Номер: US20180083159A1
Автор: Musashi Naoki
Принадлежит:

A method of manufacturing a light emitting element includes: providing a wafer including a substrate and a semiconductor layered body formed at an upper surface of the substrate; irradiating the wafer with laser light by performing first and second patterns of scanning; and separating the substrate from the semiconductor layered body. In the first pattern of scanning, the wafer is irradiated with the laser light outwardly from an inner side of the wafer or inwardly from an outer side of the wafer, so that a region irradiated with the laser light enlarges. In the second pattern of scanning, the wafer is irradiated with the laser light so that the laser light intersects with a circumferential edge of the wafer at a plurality of portions. 1. A method of manufacturing a light emitting element comprising:providing a wafer including a substrate and a semiconductor layered body formed at an upper surface of the substrate; performing a first pattern of scanning in which the wafer is irradiated with the laser light outwardly from an inner side of the wafer or inwardly from an outer side of the wafer, so that a region irradiated with the laser light enlarges, and', 'performing a second pattern of scanning in which the wafer is irradiated with the laser light so that the laser light intersects with a circumferential edge of the wafer at a plurality of portions; and, 'irradiating the wafer with laser light by'}separating the substrate from the semiconductor layered body.2. The method of manufacturing a light emitting element according to claim 1 , further comprisingbefore the irradiating of the wafer with laser light, bonding an upper surface of the wafer to a supporting substrate.3. The method of manufacturing a light emitting element according to claim 1 , whereinthe performing of the second pattern of scanning includes irradiating the wafer with the laser light so that a perimeter length of the circumferential edge of the wafer within a region scanned by the laser light is ...

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Номер записи: 57
29-03-2018 дата публикации

SiC WAFER PRODUCING METHOD

Номер: US20180085851A1
Автор: Hirata Kazuya
Принадлежит:

A SiC wafer is produced from a single crystal SiC ingot. A modified layer is formed by setting a focal point of a pulsed laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced. The pulsed laser beam is applied to the ingot while moving the ingot in a first direction perpendicular to a second direction where an off angle is formed, thereby forming a modified layer in the first direction inside the ingot and cracks propagating from the modified layer along a c-plane. A separation surface is formed by indexing the ingot in the second direction and applying the laser beam plural times to thereby form a separation surface inside the ingot. Part of the ingot is separated along the separation surface to thereby produce the wafer. 1a modified layer forming step of setting a focal point of a pulsed laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the first surface, the predetermined depth corresponding to the thickness of the SiC wafer to be produced, and next applying the pulsed laser beam to the SiC ingot as relatively moving the SiC ingot and the focal point in a first direction perpendicular to a second direction where the off angle is formed, thereby forming a linear modified layer inside the SiC ingot at the predetermined depth so as to extend in the first direction and cracks extending from the modified layer in opposite directions along the c-plane, the modified layer being formed in such a manner that SiC is decomposed into Si and C by the pulsed laser beam first applied, and the pulsed laser beam next applied is absorbed by C previously produced to continue the decomposition of SiC into Si and C in a chain reaction manner with the relative movement of the SiC ingot and the focal point in the first direction;a separation surface forming step of relatively indexing the SiC ingot and the focal point ...

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Номер записи: 58
21-03-2019 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20190084080A1
Автор: FUJITA Tsutomu, ONO Takanobu, TOMONO Akira
Принадлежит: Toshiba Memory Corporation

A semiconductor device is provided with a semiconductor substrate. A semiconductor element is provided on a first face of the semiconductor substrate. An energy absorbing film is provided on the first face, to absorb optical energy to generate heat. A first insulation film is provided on the semiconductor element and on the energy absorbing film. A second insulation film is provided on a second face of the semiconductor substrate, the second face being opposite to the first face. A first modified layer is provided on a side face of the semiconductor substrate, the side face being located between an outer edge of the first face and an outer edge of the second face. A second modified layer is provided on the side face between the energy absorbing film and the first modified layer. A cleavage face is provided on the side face between the first and second modified layers. 1. A semiconductor device comprising:a semiconductor substrate;a semiconductor element provided on a first face of the semiconductor substrate;an energy absorbing film provided on the first face,the energy absorbing film absorbing optical energy to generate heat;a first insulation film provided on the semiconductor element and on the energy absorbing film;a second insulation film provided on a second face of the semiconductor substrate, the second face being opposite to the first face;a first modified layer provided on a side face of the semiconductor substrate, the side face being located between an outer edge of the first face and an outer edge of the second face, the first modified layer including a crystal defect;a second modified layer provided on the side face between the energy absorbing film and the first modified layer, the second modified layer including a crystal defect; anda cleavage face provided on the side face between the first and second modified layers.2. The semiconductor device according to claim 1 , wherein the second modified layer is provided on the side face directly under the ...

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Номер записи: 59
30-03-2017 дата публикации

Laser processing apparatus

Номер: US20170087663A1
Автор: Hidetoshi Mannami, Hiroshi Nomura, Hisatoshi Fujisawa, Kohei Tanaka, Taiki Sawabe, Wakana Onoe
Принадлежит: Disco Corp

A laser processing apparatus includes a first chuck table for holding a first workpiece, moving units for moving the first chuck table in X and Y directions, and a first focusing unit for focusing a first laser beam to the first workpiece. A second chuck table holds a second workpiece. Other moving units move the second chuck table in the X direction and Y directions, and a second focusing unit focuses a second laser beam to the second workpiece. A laser oscillator produces an original laser beam, and an optical system branches the original laser beam into the first laser beam and the second laser beam, and leads the first and second laser beams to the first and second focusing units, respectively.

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Номер записи: 60
31-03-2016 дата публикации

Method for Separating Chips from a Wafer

Номер: US20160093534A1
Автор: Kriebel Frank, Nieland Carsten, Singleton Laurence
Принадлежит:

The invention relates to a method for producing chips () by dividing a wafer along dividing lines () defining dimensions of the chip, wherein a focus () of a preferably pulsed laser radiation () is moved along the dividing lines on a first and at least a second path () within the wafer body, wherein the laser radiation is applied to the wafer from a rear side () of the wafer, and the power density for producing the defects () on the first path () is lower than the power density for producing the defects () on the second path (), and/or the number of defects on the first path is smaller than the number of defects on the second path. 1. A method for separating chips from a wafer , said method comprising:dividing the wafer along dividing lines defining dimensions of the chip;moving a focus of a pulsed laser radiation along the dividing lines on a first and at least a second path within the wafer body, wherein the first path runs between a functional layer arranged on a front side of the wafer and the second path in such a manner that polycrystalline defects for producing internal stresses in the silicon body are formed on the paths as a result of a partial melting of the monocrystalline silicon body, wherein the laser radiation is applied to the wafer from a rear side of the wafer, and a power density for producing a number of the defects on the first path is lower than a power density for producing a number of the defects on the second path, and/or the number of defects on the first path is smaller than the number of defects on the second path, such that a falling stress gradient is formed between internal stresses induced along the second path and the first path by the defects, and the first path forms a barrier against crack propagation beyond the first path in the direction of the functional layer of the wafer; andsubjecting the wafer to a mechanical load so as to separate the chips from the wafer by way of a material fracture in dividing planes defined by the ...

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Номер записи: 61
30-03-2017 дата публикации

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

Номер: US20170092554A1
Автор: Abe Yoshiyuki, HIGASHINO Tomoko, MIYAZAKI Chuichi, MUTOU Hideo
Принадлежит:

To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. 1. A method of manufacturing a semiconductor device , comprising the steps of: a substrate comprised of an monocrystalline silicon,', 'a multiple layer formed on a main surface of the substrate, the multiple layer having a wiring comprised of a first metal, a first insulating film comprised of SiO (silicon oxide), and a second insulating film having a dielectric constant lower than a dielectric constant of the first insulating film,', 'a first pad comprised of a second metal, and formed on a front surface of the multiple layer, the first pad being arranged in a first region, which is to be obtained as a first semiconductor chip, in the front surface of the multiple layer in plan view,', 'a second pad comprised of the second metal, and formed on the front surface of the multiple layer, the second pad being arranged in a second region, which is to be obtained as a second semiconductor chip, in the front surface of the multiple layer in plan view, and', 'a third pad comprised of the second metal, and formed on the front surface of the multiple layer, the third pad being arranged in a third region, which is to be removed by using a dicing saw, in the front surface of the multiple layer in plan view, the third region being located between the first region and the second region in plan view;, '(a) providing a semiconductor wafer having(b) after the step (a), irradiating both sides of the third pad of the semiconductor wafer with a laser beam so as not to contact with the first, second and third pads, thereby forming ...

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Номер записи: 62
05-04-2018 дата публикации

APPARATUSES AND METHODS FOR LASER PROCESSING TRANSPARENT WORKPIECES USING NON-AXISYMMETRIC BEAM SPOTS

Номер: US20180093914A1
Автор: Akarapu Ravindra Kumar, Piech Garrett Andrew, Tsuda Sergio, West James Andrew
Принадлежит:

A method for laser processing a transparent workpiece includes forming a contour line that includes defects, by directing a pulsed laser beam output by a beam source through an aspheric optical element positioned offset in a radial direction from the beam pathway and into the transparent workpiece such that the portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece that produces a defect within the transparent workpiece. The portion of the pulsed laser beam directed into the transparent workpiece includes a wavelength λ, an effective spot size w, and a non-axisymmetric beam cross section having a minimum Rayleigh range Zin an x-direction and a minimum Rayleigh range Zin a y-direction. Further, the smaller of Zand Zis greater than 2. The method of claim 1 , further comprising translating the transparent workpiece and the pulsed laser beam relative to each other along the contour line claim 1 , thereby laser forming a plurality of defects along the contour line within the transparent workpiece.3. The method of claim 2 , further comprising directing an infrared laser beam onto the transparent workpiece along or near the contour line to separate the transparent workpiece along the contour line.4. The method of claim 1 , wherein the aspheric optical element comprises a refractive axicon claim 1 , a reflective axicon claim 1 , waxicon claim 1 , negative axicon claim 1 , a spatial light modulator claim 1 , a diffractive optic claim 1 , or a cubically shaped optical element.5. The method of claim 1 , wherein:the aspheric optical element is offset from the beam pathway in the radial direction by an offset distance; andthe offset distance is a distance from about 10% to about 75% of a cross sectional diameter of the pulsed laser beam at a contact location between the pulsed laser beam and the aspheric optical element.6. The method of claim 1 , wherein the dimensionless divergence factor ...

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Номер записи: 63
05-04-2018 дата публикации

METHOD AND SYSTEM FOR PERFORMING AN IMPROVED SUPPORT FOR 3D DISPLAYING AND CORRESPONDING SUPPORT PERFORMED

Номер: US20180095288A1
Автор: DE MOLLI Daniele
Принадлежит:

The invention discloses a method for performing a support for D transmission, comprising the steps of providing an unprocessed transparent support (), performing a laser incision in the unprocessed transparent support () using a pulsed laser beam (), and driving the pulsed laser beam () in such a manner that incising into the unprocessed transparent support () gives rise to areas () with lower transmittance (TR_) with respect to a transmittance (TFM O) of the unprocessed transparent support (), the alternation of the areas (a; b) with lower transmittance (TR_) and the unprocessed transparent support () creating bands (BB) that implement an autostereoscopic barrier (B B). The invention further discloses a system for implementing the above-mentioned method and a transparent support with the characteristics conferred by the above-mentioned method. 1. A method for performing a support for 3D transmission , comprising the steps of:{'b': '10', 'providing an unprocessed transparent support ();'}{'b': 10', '21, 'performing a laser incision in said unprocessed transparent support () using a pulsed laser beam ();'}{'b': 21', '10', '11', '11', '11', '10', '10', '11', '11', '11', '10', '1', '2', '1', '2, 'i': a;', 'b', 'a;', 'b', 'i;', 'i;, 'driving said pulsed laser beam () in such a manner that incision into the unprocessed transparent support () gives rise to areas ( ) with lower transmittance (TR_) with respect to a transmittance (TR_) of said unprocessed transparent support (), the alternation of said areas ( ) with lower transmittance (TR_) and said unprocessed transparent support () creating bands (B Bwith i=1 . . . n) that implement an autostereoscopic barrier (B; B).'}211111110a;b. The method according to claim 1 , comprising the step of performing an anti-reflection treatment of said areas ( ) with lower transmittance (TR_) and/or on said unprocessed transparent support ().310211212i;i. The method according to claim 1 , wherein said step of performing a laser-incision ...

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Номер записи: 64
12-04-2018 дата публикации

FORMING WHITE METAL OXIDE FILMS BY OXIDE STRUCTURE MODIFICATION OR SUBSURFACE CRACKING

Номер: US20180099352A1
Автор: McDonald Daniel T., Nashner Michael S., Russell-Clarke Peter N., TATEBE Masashige
Принадлежит:

The embodiments described herein relate to forming white appearing metal oxide films by forming cracks within the metal oxide films. In some embodiments, the methods involve directing a laser beam at a metal oxide film causing portions of the metal oxide film to melt, cool, contract, and crack. The cracks have irregular surfaces that can diffusely reflect visible light incident a top surface of the metal oxide film, thereby imparting a white appearance to the metal oxide film. In some embodiments, the cracks are formed beneath a top surface of a metal oxide film, thereby leaving a continuous and uninterrupted metal oxide film top surface. 1. An enclosure for a portable electronic device , comprising:a substrate formed of a metal; anda metal oxide layer disposed over the substrate, the metal oxide layer having crystalline portions that include light-reflective facets, wherein the crystalline portions are separated by at least a separation distance such that visible light that passes through the metal oxide layer and impinges on the light-reflective facets is diffusely reflected out of the metal oxide layer at different angles, thereby imparting a white appearance to the metal oxide layer.2. The enclosure of claim 1 , wherein the metal oxide layer includes an exterior surface claim 1 , and the light-reflective facets include at least (i) a first light-reflective facet oriented at a first angle relative to the exterior surface claim 1 , and (ii) a second light-reflective facet oriented at a second angle relative to the exterior surface that is different than the first angle.3. The enclosure of claim 1 , wherein the separation distance between the crystalline portions is between about 1 micrometer to about 10 micrometers.4. The enclosure of claim 1 , wherein the metal oxide layer includes an oxidized portion of the metal having a first index of refraction claim 1 , and the light-reflective facets have a second index of refraction that is different than the first index ...

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Номер записи: 65
12-04-2018 дата публикации

WAFER PROCESSING METHOD

Номер: US20180102288A1
Автор: Bae Taewoo
Принадлежит:

A wafer processing method is provided. The wafer processing method includes a first laser processing step of forming a first modified layer inside the wafer by applying a laser beam at a wavelength which transmits the wafer along first projected division lines, a second laser processing step of forming a second modified layer inside the wafer excluding non-processed regions in intersecting regions where the first and second projected division lines intersect each other by applying a laser beam at a wavelength which transmits the wafer along the second projected division lines, and a grinding step of grinding a reverse side of the wafer to thin the wafer to a predetermined thickness and at the same time dividing the wafer into a plurality of chips starting from the first and second modified layers. In the second laser processing step, no second modified layers are formed in the non-processed regions. 1. A wafer processing method of processing a wafer with a device disposed in each of areas of a face side demarcated by a plurality of first projected division lines that extend in a first direction and a plurality of second projected division lines that extend in a second direction intersecting the first direction , the wafer processing method comprising:a first laser processing step of forming a first modified layer inside the wafer by applying a laser beam at a wavelength which transmits the wafer along the first projected division lines;a second laser processing step of forming a second modified layer inside the wafer excluding non-processed regions in intersecting regions where the first and second projected division lines intersect each other by applying a laser beam at a wavelength which transmits the wafer along the second projected division lines; anda grinding step of grinding a reverse side of the wafer to thin the wafer to a predetermined thickness and at the same time dividing the wafer into a plurality of chips starting from the first and second modified ...

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Номер записи: 66
13-04-2017 дата публикации

GLASS-BASED SUBSTRATE WITH VIAS AND PROCESS OF FORMING THE SAME

Номер: US20170103249A1
Автор: Jin Yuhui, Wilhelm Matthew Evan
Принадлежит:

A glass sensor substrate including metallizable through vias and related process is provided. The glass substrate has a first major surface, a second major surface and an average thickness of greater than 0.3 mm. A plurality of etch paths are created through the glass substrate by directing a laser at the substrate in a predetermined pattern. A plurality of through vias through the glass substrate are etched along the etch paths using a hydroxide based etching material. The hydroxide based etching material highly preferentially etches the substrate along the etch path. Each of the plurality of through vias is long compared to their diameter for example such that a ratio of the thickness of the glass substrate to a maximum diameter of each of the through vias is greater than 8 to 1. 1. A process for forming vias in a glass-based substrate having a first major surface and an opposing second major surface , the process comprising:creating a plurality of etch paths extending from the first major surface of the glass substrate by directing a laser at the substrate in a predetermined pattern; andetching a plurality of vias extending from the first major surface of the glass substrate along the etch paths using a hydroxide based etching material, wherein the hydroxide based etching material preferentially etches the substrate along the etch path such that an etch rate of the etching material along the etch path is at least 12 times greater than an etch rate of the etching material outside of the etch paths.2. The process of claim 1 , wherein each of the plurality of vias have a ratio of the length of the via to a maximum diameter of the via is greater than 8 to 1.3. The process of claim 1 , wherein at least one of the plurality of vias is a through via.4. The process of claim 1 , wherein at least one of the plurality of vias is a blind via.5. The process of claim 1 , wherein the laser is a picosecond laser.6. The process of claim 1 , wherein the maximum diameter of each of ...

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Номер записи: 67
19-04-2018 дата публикации

LASER LIFT-OFF METHOD OF WAFER

Номер: US20180108568A1
Автор: GAO Yunfeng, LI Fuhai, Wang Yanhua, Yin Jiangang, Zeng Wei, Zhu Wei, Zhuang Changhui
Принадлежит:

The present invention relates to a laser lift-off method of wafer. The method includes the steps as follows: focusing laser in an inside for a wafer () to form a plurality of cracking points (), the plurality of cracking points () are located on a separating surface (); and exerting, under a temperature of −400K to 0K, forces with opposite directions to opposite sides of the wafer (), thereby dividing the wafer () into two pieces along the separating surface (). 1. A laser lift-off method for a wafer , comprising:focusing a laser into an inside for a wafer to form a plurality of cracking points, the plurality of cracking points being located on a separating surface; andexerting, under a temperature of −400K to 0K, forces with opposite directions to opposite sides of the wafer, thereby dividing the wafer into two pieces along the separating surface.2. The method according to claim 1 , wherein exerting forces with opposite directions to opposite sides of the wafer claim 1 , thereby dividing the wafer into two pieces along the separating surface comprises:adhering opposite sides of the wafer to two substrates, respectively;pulling the two substrates along opposite directions to divide the wafer into two pieces along the separating surface; andseparating the substrate from the wafer.3. The method according to claim 2 , wherein opposite sides of the wafer are adhered to the two substrates via polymer glue.4. The method according to claim 1 , wherein the separating surface is flat claim 1 , and the separating surface is parallel to opposite sides of the wafer.5. The method according to claim 4 , wherein the separating surface is a cross-section of the wafer claim 4 , the plurality of cracking points are uniformly distributed on the separating surface.6. The method according to claim 5 , wherein a distance between adjacent two cracking points ranges from 1 micrometer to 20 micrometers.7. The method according to claim 1 , wherein the wafer has a thickness ranging from 0.1 ...

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Номер записи: 68
26-04-2018 дата публикации

LASER IRRADIATION METHOD AND APPARATUS

Номер: US20180111222A1
Автор: Inami Toshio, Sato Ryosuke, Yamashita Yasuhiro
Принадлежит: THE JAPAN STEEL WORKS, LTD.

A laser irradiation method sets scan lines in an x direction in parallel, and in a y direction to be separate by an inter-scan-line distance Py corresponding to laser irradiation areas of a processing target object, orients a length direction of a linear laser spot with length Wy and width Wx in the y direction, and irradiates target object with the laser spot in each of irradiation positions arranged at width direction intervals Λ while moving the laser spot relative to the target object along the scan lines. The method includes determining the inter-scan-line distance Py, the width direction interval Λ, and a position shift quantity Δx (where, 0<Δx<Λ) so that the irradiation positions on adjacent scan lines are shifted in the x direction by the position shift quantity Δx and a cumulative value of the applied laser intensity is substantially equalized. 1. A laser irradiation method that sets a plurality of scan lines extending in an x direction in parallel to one another and arranged in a y direction so as to be separate from one another by an inter-scan-line distance Py in correspondence with laser irradiation areas of a processing target object , orients a length direction of a linear laser spot having a length Wy and a width Wx in the y direction , and irradiates the processing target object with the laser spot in each of irradiation positions arranged at width direction intervals Λ while moving the laser spot relative to the processing target object along the scan lines , the laser irradiation method comprising:determining the inter-scan-line distance Py, the width direction interval Λ, and a position shift quantity Δx (where, 0<Δx<Λ) in such a way that the irradiation positions on adjacent scan lines are shifted from each other in the x direction by the position shift quantity Δx and a cumulative value of the applied laser intensity is substantially equalized.2. The laser irradiation method according to claim 1 , wherein in a case where an angle θ between the ...

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Номер записи: 69
27-04-2017 дата публикации

Laser machining device and laser machining method

Номер: US20170113298A1
Автор: Kenshi Fukumitsu
Принадлежит: Hamamatsu Photonics KK

The controllability of modified spots is improved. A laser processing apparatus 100 comprises a first laser light source 101 for emitting a first pulsed laser light L 1 , a second laser light source 102 for emitting a second pulsed laser light L 2 , half-wave plates 104, 105 for respectively changing directions of polarization of the pulsed laser light L 1 , L 2 , polarization beam splitters 106, 107 for respectively polarization-separating the pulsed laser light L 1 , L 2 having changed the directions of polarization, and a condenser lens 112 for converging the polarization-separated pulsed laser light L 1 , L 2 at an object to be processed 1 . When the directions of polarization of the pulsed laser light L 1 , L 2 changed by the half-wave plates 104, 105 are varied by a light intensity controller 121 in the laser processing apparatus 100 , the ratios of the pulsed laser light L 1 , L 2 polarization-separated by the polarization beam splitters 106, 107 are altered, whereby the respective intensities of the pulsed laser light L 1 , L 2 are adjusted.

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Номер записи: 70
17-07-2014 дата публикации

METHOD AND DEVICE FOR THE LASER-BASED MACHINING OF SHEET-LIKE SUBSTRATES

Номер: US20140199519A1
Автор: Grundmüller Richard, Schillinger Helmut
Принадлежит: Corning Laser Technologies GmbH

A method for the laser-based machining of a sheet-like substrate, in order to separate the substrate into multiple portions, in which the laser beam of a laser for machining the substrate is directed onto the latter, is characterized in that, with an optical arrangement positioned in the path of rays of the laser, an extended laser beam focal line, seen along the direction of the beam, is formed on the beam output side of the optical arrangement from the laser beam directed onto the latter, the substrate being positioned in relation to the laser beam focal line such that an induced absorption is produced in the material of the substrate in the interior of the substrate along an extended portion, seen in the direction of the beam, of the laser beam focal line, such that a material modification takes place in the material of the substrate along this extended portion. 1. A method comprising:focusing a pulsed laser beam into a laser beam focal line, viewed along the beam propagation direction, the laser beam focal line having a length in a range of between 0.1 mm and 100 mm; anddirecting the laser beam focal line into a material at an angle of incidence to a surface of the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a material modification along the laser beam focal line within the material.2. The method of claim 1 , further including translating the material and the laser beam relative to each other claim 1 , thereby producing a plurality of material modifications within the material claim 1 , the material modifications spaced apart so as to separate the material into at least two pieces.3. The method of claim 1 , wherein the laser beam has an average laser energy measured at the material less than about 400 μJ.4. The method of claim 3 , wherein the laser beam has an average laser energy measured at the material less than about 250 μJ.5. The method of claim 1 , wherein the pulse duration is ...

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Номер записи: 71
03-05-2018 дата публикации

METHOD FOR DIVIDING A COMPOSITE INTO SEMICONDUCTOR CHIPS, AND SEMICONDUCTOR CHIP

Номер: US20180117706A1
Автор: KAEMPF Mathias
Принадлежит:

The invention relates to a method for dividing a composite into a plurality of semiconductor chips along a dividing pattern. A composite, which comprises a substrate, a semiconductor layer sequence, and a functional layer, is provided. Separating trenches are formed in the substrate along the dividing pattern. The functional layer is cut through along the dividing pattern by means of coherent radiation. Each divided semiconductor chip has part of the semiconductor layer sequence, part of the substrate, and part of the functional layer. The invention further relates to a semiconductor chip. 1. Method for dividing a composite into a plurality of semiconductor chips along a dividing pattern , comprising the following steps:a) providing a composite which has a carrier, a semiconductor layer sequence and a functional layer;b) forming separating trenches in the carrier along the dividing pattern; and 'wherein the divided semiconductor chips each have a part of the semiconductor layer sequence, of the carrier and of the functional layer.', 'c) cutting through the functional layer by means of coherent radiation along the dividing pattern;'}2. Method according to claim 1 ,wherein step c) is carried out before step b).3. Method according to claim 1 ,wherein the semiconductor layer sequence is divided into a plurality of semiconductor bodies by means of mesa trenches prior to step c).4. Method according to claim 3 ,wherein the functional layer is cut through in step c) along the mesa trenches.5. Method according to claim 1 ,wherein the semiconductor layer sequence is divided into a plurality of semiconductor bodies by means of mesa trenches, the semiconductor layer sequence and the functional layer being cut through in a common production step in step c).6. Method according to claim 1 ,wherein the coherent radiation in step c) is laser radiation with a pulse duration in the nanosecond or picosecond range.7. Method according to claim 6 ,wherein the laser radiation comprises ...

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Номер записи: 72
03-05-2018 дата публикации

METHOD FOR THE LOW-LOSS PRODUCTION OF MULTI-COMPONENT WAFERS

Номер: US20180118562A1
Автор: Drescher Wolfram, Richter Jan, SCHILLING Franz
Принадлежит:

The present invention relates to a method for producing a multi-component wafer, in particular a MEMS wafer. The method according to the invention comprises at least the following steps: providing a bonding wafer (), wherein at least one surface portion () of the bonding wafer () is formed by an oxide film, providing a dispenser wafer (), wherein the dispenser wafer () is thicker than the bonding wafer (), bringing the dispenser wafer () into contact with the surface portion () of the bonding wafer () that is formed by the oxide film, forming a multilayer arrangement () by connecting the dispenser wafer () and the bonding wafer () in the region of the contact, producing modifications () in the interior of the dispenser wafer () for predefining a detachment region () for separating the multilayer arrangement () into a detaching part () and a connecting part (), wherein the production of the modifications () takes place before the formation of the multilayer arrangement () or after the formation of the multilayer arrangement (), separating the multilayer arrangement along the detachment region as a result of a weakening of the multilayer arrangement brought about by the production of a sufficient number of modifications or as a result of production of mechanical stresses in the multilayer arrangement, wherein the connecting part () remains on the bonding wafer () and wherein the split-off detachment part () has a greater thickness than the connecting part (). 11. A method for producing a multi-component wafer () , in particular a MEMS wafer , at least comprising the following steps:{'b': 2', '4', '2, 'providing a bonding wafer (), wherein at least one surface portion () of the bonding wafer () is formed by an oxide layer,'}{'b': 6', '6', '2, 'providing a donor wafer (), wherein the donor wafer () is thicker than the bonding wafer (),'}{'b': 6', '4', '2, 'bringing the donor wafer () into contact with the surface portion () of the bonding wafer () formed by the oxide ...

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Номер записи: 73
04-05-2017 дата публикации

PROCESSING OF MATERIAL USING NON-CIRCULAR LASER BEAMS

Номер: US20170120374A1
Автор: HENDRICKS Frank, MATYLITSKY Victor
Принадлежит: HIGH Q LASER GMBH

Method for processing of material by use of a pulsed laser. Each laser pulse is shaped regarding its beam profile so that a cross sectional area, which is defined by a cross section of the laser pulse in its focal point orthogonal to its propagation direction, is of particular shape and has a main extension axis of greater extent than its minor extension axis. One major crack is effected by each laser pulse, the major crack having a lateral extension basically oriented according to the main extension axis of the respective pulse in the focal point. Furthermore, each laser pulse is emitted so that the orientation of its main extension axis in the focal point corresponds to a pre-defined orientation relative to an orientation of a respective tangent to the processing path at the assigned processing point. 120.-. (canceled)21. Method for processing of material by use of a pulsed laser , the material being transparent or semi-transparent regarding a wavelength of the pulsed laser , the method comprising:generating a series of ultra-short laser pulses with pulse durations of less than 1 ns;directing each laser pulse to the material with defined reference to a respectively assigned processing point of a processing path;focusing each laser pulse so that respective focal points of the focused laser pulses comprise pre-defined spatial relations to a first surface of the material, wherein each emitted laser pulse effects a respective crack within the material;shaping each laser pulse regarding its beam profile so that a cross sectional area, which is defined by a cross section of the laser pulse in its focal point orthogonal to its propagation direction, is of a particular shape and has a main extension axis of significantly greater extent than a minor extension axis which is orthogonal to the main extension axis;effecting one major micro-crack by each laser pulse, the major micro-crack having a lateral extent basically oriented according to the orientation of the main ...

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Номер записи: 74
10-05-2018 дата публикации

SPLITTING OF A SOLID USING CONVERSION OF MATERIAL

Номер: US20180126484A1
Автор: BEYER Christian, Richter Jan, Rieske Ralf
Принадлежит:

The invention relates to a method for creating a detachment zone () in a solid () in order to detach a solid portion (), especially a solid layer (), from the solid (), said solid portion () that is to be detached being thinner than the solid from which the solid portion () has been removed. According to the invention, the method comprises at least the steps of: providing a solid () which is to be processed and which is preferably made of a chemical compound; providing a LASER light source; subjecting the solid () to LASER radiation from the LASER light source so that the laser beams penetrate into the solid () via a surface () of the solid portion () that is to be cut off; the LASER radiation is applied in a defined manner to a predefined portion of the solid () inside the solid () such that a detachment zone () or a plurality of partial detachment zones () is formed; the method is characterized in that a number of modifications () is successively created in the crystal lattice by the applied laser radiation, and the crystal lattice fissures at least partially in the regions surrounding the modifications () as a result of the modifications (), said fissures in the region of the modifications () predefining the detachment zone () or a plurality of partial detachment zones (). 116-. (canceled)17. A method for creating a detachment zone in a solid in order to detach a solid portion , in particular a solid layer , from the solid , wherein the solid portion to be detached is thinner than the solid from which the solid portion has been removed , at least comprising the steps:providing a solid to be processed, wherein the solid preferably consists of a chemical compound;providing a laser light source;subjecting the solid to laser radiation from the laser light source,wherein the laser beams penetrate into the solid via a surface of the solid portion to be cut off,wherein the laser radiation is applied in a defined manner to a predefined portion of the solid inside the ...

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Номер записи: 75
21-05-2015 дата публикации

METHODS AND SYSTEMS FOR LASER PROCESSING OF COATED SUBSTRATES

Номер: US20150136744A1
Автор: ARAI Alan Y., Cho Gyu Cheon, Xu Jingzhou
Принадлежит:

Examples of methods and systems for laser processing of materials are disclosed. Methods and systems for singulation of a wafer comprising a coated substrate can utilize a laser outputting light that has a wavelength that is transparent to the wafer substrate but which may not be transparent to the coating layer(s). Using techniques for managing fluence and focal condition of the laser beam, the coating layer(s) and the substrate material can be processed through ablation and internal modification, respectively. The internal modification can result in die separation. 1. A system for processing a workpiece , the workpiece comprising a substrate and a layer formed on the substrate , the layer having an ablation threshold that is less than an ablation threshold of the substrate , the system comprising:a laser source configured to provide laser pulses having a pulse energy and a wavelength, wherein the substrate is substantially transparent to the laser pulses at the wavelength;a beam delivery system configured to deliver the laser pulses to the workpiece;focusing optics; and (1) intensity of the laser pulses in or near the layer is at or above the ablation threshold of the layer and below the ablation threshold of the substrate, and', '(2) intensity of the laser pulses near a focal spot in the substrate is at or above the ablation threshold of the substrate., 'a controller configured to adjust fluence of the laser pulses and to adjust the focusing optics to provide desired focal conditions of the laser pulses at the layer and at a focal spot inside the substrate such that2. The system of claim 1 , wherein the substrate is substantially transparent to the laser pulses at the wavelength.3. The system of claim 1 , wherein said layer comprises a conductive film.4. The system of claim 3 , wherein said conductive film comprises ITO.5. The system of claim 3 , wherein said conductive film comprises gold.6. The system of claim 3 , further comprising at least one dielectric ...

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Номер записи: 76
17-05-2018 дата публикации

Splitting of a solid using conversion of material

Номер: US20180133834A1
Автор: Christian Beyer
Принадлежит: SILTECTRA GmbH

A method for creating a detachment zone in a solid is contemplated, such as in order to detach a solid portion, especially a solid layer, from the solid, said solid portion that is to be detached being thinner than the solid from which the solid portion has been removed. The method may comprise at least the steps of: providing a solid which is to be processed and which is made of a chemical compound; providing a LASER light source; and subjecting the solid to LASER radiation from the LASER light source so that the laser beams penetrate into the solid via a surface of the solid portion that is to be cut off; the LASER radiation controlling the temperature of a predefined portion of the solid inside the solid in a defined manner such that a detachment zone or a plurality of partial detachment zones is formed; characterized in that the temperature produced by the laser beams in a predefined portion of the solid is so high that the material forming the predefined portion is subject to modifications in the form of a predetermined conversion of material.

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Номер записи: 77
17-05-2018 дата публикации

METHOD AND DEVICE FOR SEPARATION OF GLASS PORTIONS OR GLASS CERAMIC PORTIONS

Номер: US20180134604A1
Автор: Lentes Frank-Thomas, Ortner Andreas, SEIDL Albrecht, Wagner Fabian
Принадлежит: SCHOTT AG

A method is provided that includes producing filamentary damages in a volume of a glass or glass ceramic element adjacently aligned along a separation line and extend obliquely relative to a surface of the glass or glass ceramic element; and separating a portion from the glass or glass ceramic element along the separation line. The step of producing the filamentary damages includes directing laser pulses of an ultrashort pulse laser obliquely on the surface so that the laser pulses have a light propagation direction that extends obliquely relative to the surface and so that the filamentary damages resulting from the laser pulses have the longitudinal extension that extends obliquely relative to the surface; generating a plasma within the volume with the laser pulses; and displacing the laser pulses at points of incidence over the surface along the separation line. 1. A method for separating portions from a glass or glass ceramic element , comprising:producing filamentary damages in a volume of the glass or glass ceramic element, the filamentary damages being adjacently aligned along a separation line and having a longitudinal extension that extends obliquely relative to a surface of the glass or glass ceramic element; andseparating a portion from the glass or glass ceramic element along the separation line, directing laser pulses of an ultrashort pulse laser obliquely on the surface so that the laser pulses have a light propagation direction that extends obliquely relative to the surface and so that the filamentary damages resulting from the laser pulses have the longitudinal extension that extends obliquely relative to the surface,', 'generating a plasma within the volume with the laser pulses, wherein the glass or glass ceramic element comprising a material that is transparent to the laser pulses, and', 'displacing the laser pulses at points of incidence over the surface along the separation line, wherein the separation line extends obliquely to a light incidence ...

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Номер записи: 78
17-05-2018 дата публикации

METHOD AND DEVICE FOR LASER-ASSISTED SEPARATION OF A PORTION FROM A SHEET GLASS ELEMENT

Номер: US20180134606A1
Автор: GERBAN Jörn, Lentes Frank-Thomas, Ortner Andreas, Schmitt Simon, SEIDL Albrecht, Wagner Fabian
Принадлежит: SCHOTT AG

A method for separating a portion from a sheet glass element having a thickness of at least 2 millimeters along an intended separation line that divides the sheet glass element into the portion and a remaining main part is provided. The method includes producing filamentary damages comprising sub-micrometer hollow channels in a volume of the glass sheet element adjacently aligned along the separation line; and heating and/or cooling the glass sheet element to cause expansion and/or contraction so that the portion detaches from the main part along the separation line. The portion and the remaining main part each remain intact as a whole. The step of producing the filamentary damages includes generating a plasma within the volume with laser pulses of an ultrashort pulse laser; and displacing points of incidence of the laser pulses over a surface of the glass sheet element along the separation line. 1. A method for separating a portion from a sheet glass element having a thickness of at least 2 millimeters along an intended separation line that divides the sheet glass element into the portion and a remaining main part , the method comprising:producing filamentary damages comprising sub-micrometer hollow channels in a volume of the glass sheet element adjacently aligned along the separation line; andheating and/or cooling the glass sheet element to cause expansion and/or contraction so that the portion detaches from the main part along the separation line, wherein the portion and the remaining main part each remain intact as a whole, generating a plasma within the volume with laser pulses of an ultrashort pulse laser, wherein the sheet glass element comprises a material that is transparent to the laser pulses, and', 'displacing points of incidence of the laser pulses over a surface of the glass sheet element along the separation line., 'wherein the step of producing the filamentary damages comprises2. The method as in claim 1 , wherein the heating step comprises heating ...

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Номер записи: 79
18-05-2017 дата публикации

SiC SUBSTRATE SEPARATING METHOD

Номер: US20170136572A1
Автор: Hirata Kazuya
Принадлежит:

Disclosed herein is an SiC substrate separating method for separating an SiC substrate into at least two parts in a planar manner. The SiC substrate separating method includes an adhesive tape attaching step of attaching a transparent adhesive tape to a first surface of the SiC substrate, a support member attaching step of attaching a support member to a second, opposite surface of the SiC substrate, and a separation start point forming step of setting the focal point of a laser beam at a predetermined depth from the adhesive tape and next applying the laser beam to the adhesive tape while relatively moving the focal point and the SiC substrate to thereby form a modified layer parallel to the first surface of the SiC substrate and cracks propagating from the modified layer, thus forming a separation start point. 1. An SiC substrate separating method for separating an SiC substrate into at least two parts in a planar manner , said SiC substrate having a first surface and a second surface opposite to said first surface , said SiC substrate separating method comprising:an adhesive tape attaching step of attaching a transparent adhesive tape to said first surface of said SiC substrate;a support member attaching step of attaching a support member to said second surface of said SiC substrate;a separation start point forming step of setting the focal point of a laser beam having a transmission wavelength to said SiC substrate and said adhesive tape inside said SiC substrate at a predetermined depth from said adhesive tape after performing said adhesive tape attaching step and said support member attaching step, and next applying said laser beam to said adhesive tape as relatively moving said focal point and said SiC substrate to thereby form a modified layer parallel to said first surface of said SiC substrate and cracks propagating from said modified layer, thus forming a separation start point; anda separating step of applying an external force to said SiC substrate ...

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Номер записи: 80
18-05-2017 дата публикации

LASER-COLORED SAPPHIRE MATERIAL

Номер: US20170137321A1
Автор: Fagan Christopher R., Li Michael M., Prasad Anubhav
Принадлежит:

A colored sapphire material and methods for coloring sapphire material using lasers are disclosed. The method for coloring the sapphire material may include positioning the sapphire material over an opaque substrate material, exposing the opaque substrate material to a laser beam passing through the sapphire material to impact the substrate material, and inducing a chemical change in a portion of the sapphire material exposed to the laser beam. The method may also include creating a visible color in the portion of the sapphire material as a result of the chemical change. The colored sapphire material may include a first transparent portion, and a second, colored portion substantially surrounded by the first portion. The second, colored portion may have a chemical composition different than that of the first portion. 120-. (canceled)21. A method of coloring a sapphire material , comprising:passing a laser beam through the sapphire material and an opaque substrate material abutting the sapphire material; andforming a colored region within a portion of the sapphire material exposed to the laser beam using atoms of the opaque substrate material.22. The method of claim 21 , wherein forming the colored region comprises inducing a chemical change in the portion of the sapphire material exposed to the laser beam.23. The method of claim 22 , wherein inducing the chemical change comprises moving atoms of the opaque substrate material into the sapphire material.24. The method of claim 21 , wherein passing the laser beam excites atoms of the opaque substrate material.25. The method of claim 24 , wherein forming the colored region comprises embedding the excited atoms of the opaque substrate material into the sapphire material.26. The method of claim 21 , wherein the colored region is optically distinct from a remainder of the sapphire material that is unexposed to the laser beam.27. The method of claim 21 , wherein:the sapphire material is substantially transparent; andthe ...

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Номер записи: 81
24-05-2018 дата публикации

Top-Side Laser for Direct Transfer of Semiconductor Devices

Номер: US20180141163A1
Автор: Huska Andrew, Peterson Cody, Wendt Justin
Принадлежит:

An apparatus includes a needle including a hole extending from a first end to a second end through the needle and an energy-emitting device arranged in the hole of the needle. The energy-emitting device being configured to emit a specific wavelength and intensity of energy directed at an electrically-actuatable element to bond a circuit trace and the electrically-actuatable element. 1. An apparatus configured to transfer an electrically-actuatable element directly from a first side of a wafer tape to a product substrate having a circuit trace thereon , the apparatus comprising:a needle disposed adjacent a second side of the wafer tape opposite the first side of the wafer tape, the needle including a first end opposite a second end and a hole extending from the first end to the second end through the needle;a needle actuator to move the needle to a position at which the second end of the needle presses on the second side of the wafer tape to press the electrically-actuatable element into contact with the circuit trace disposed adjacent the first side of the product substrate; andan energy-emitting device arranged in the hole of the needle, the energy-emitting device being configured to emit a specific wavelength and intensity of energy directed at the electrically-actuatable element when the second end of the needle presses the electrically-actuatable element into contact with the circuit trace to bond the circuit trace and the electrically-actuatable element.2. The apparatus according to claim 1 , wherein the hole is a first hole claim 1 , andwherein the apparatus further comprises a second hole located in the needle actuator, at least a portion of the energy-emitting device extending through the second hole.3. The apparatus according to claim 1 , further comprising a clamp connected to the end of the needle actuator and connected to the first end of the needle claim 1 ,wherein the hole is a first hole, andwherein the apparatus further comprises a second hole ...

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Номер записи: 82
04-06-2015 дата публикации

METHOD AND APPARATUS FOR LASER PROCESSING OF SILICON BY FILAMENTATION OF BURST ULTRAFAST LASER PULSES

Номер: US20150151380A1
Автор: HOSSEINI S. ABBAS
Принадлежит: ROFIN-SINAR TECHNOLOGIES INC.

A method for laser processing of Silicon includes placing a Kerr material into engagement with the Silicon forming an interface therebetween. A laser beam is applied having at least one subpulse in a burst envelope operating at a first wavelength. The laser beam passes through a distributive lens focusing assembly and to the Kerr material. The first wavelength is modified to a plurality of second wavelengths, some of which are effective for processing Silicon. Photoacoustic compression processing is produced by the laser pulse energy by a portion of second wavelengths delivered through the interface and to the Silcon which initiates Kerr Effect self focusing which is propagated in the Silicon by additional energy input to the Silicon thus producing a filament within the Silicon. 1. A method for laser processing of Silicon , comprising the steps of:providing a Silicon substrate, said Silicon substrate includes a top surface;providing a Kerr material and placing said Kerr material into engagement with said top surface of said Silicon substrate forming an interface therebetween;applying a laser beam having at least one subpulse in a burst envelope, said burst envelope includes 1-50 subpulses, said subpulses in said envelope operating at a first wavelength, from a laser source through a distributive lens focusing assembly and to said Kerr material; and,modifying said first wavelength of said subpulses as said subpulses travel through said Kerr material such that said subpulses are emitted from Kerr material at said interface between said Kerr material and said top surface of said Silicon substrate at a plurality of second wavelengths, said plurality of second wavelengths being white light;a portion of said plurality of said second wavelengths of said subpulses being greater than or equal to 1.3 μm;photoacoustic compression processing is produced by said portion of said plurality of said second wavelengths being greater than or equal to 1.3 μm delivered through said ...

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Номер записи: 83
25-05-2017 дата публикации

OPTICAL PLATE, LIGHT IRRADIATION DEVICE, LIGHT MEASUREMENT DEVICE, LIGHT IRRADIATION METHOD, AND LIGHT MEASUREMENT METHOD

Номер: US20170146720A1
Автор: Fukumitsu Kenshi, YAMAMOTO Satoshi
Принадлежит: HAMAMATSU PHOTONICS K.K.

An optical plate is an optical plate for irradiating a target with light, and includes a light input surface for inputting the light, a light output surface for outputting the light, a back surface opposite to the light output surface, and a light diffusion portion formed at least inside the optical plate by converging laser light, for diffusing the light. The light input surface is a surface between the light output surface and the back surface, and the light input from the light input surface is diffused in the light diffusion portion and output from the light output surface. 1: An optical plate for irradiating a target with light , comprising:a light input surface configured to input the light;a light diffusion portion formed at least inside the optical plate by converging laser light, and configured to diffuse the light input from the light input surface,a light output surface configured to output the light diffused in the light diffusion portion; anda back surface opposite to the light output surface,wherein the light input surface is a surface between the light output surface and the back surface.2: The optical plate according to claim 1 , further comprising:a light guide portion configured to guide the light between the light input surface and a surface facing the light input surface.3: The optical plate according to claim 2 , further comprising:a first portion in which the light diffusion portion is formed, and a second portion formed integrally with the first portion,wherein the light guide portion is formed in the second portion.4: The optical plate according to claim 2 ,wherein the optical plate is formed by coupling a first portion in which the light diffusion portion is formed to a second portion formed separately from the first portion, andthe light guide portion is formed in the second portion.5: The optical plate according to claim 1 ,wherein the light diffusion portion is formed over at least a portion between the light output surface and the back ...

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Номер записи: 84
21-08-2014 дата публикации

CONTINUOUS METHOD FOR THE PRODUCTION OF LIGHT GUIDE PLATES

Номер: US20140232027A1
Автор: BAUM Alexander, Machleid Gerd, PISULA Wojciech, SCHMIDT Jann
Принадлежит: Evonik Roehm GmbH

The present invention relates to a method for continuously producing light guide plates, e.g. for use as backlighting in LC displays, and to an apparatus for carrying out said method. 1. A method for producing a light guide plate having light-influencing structures , the method comprising:producing a plastic web by extrusion, in the presence of a device for smoothing the surface of a plastic plate web;continuously passing the plastic web below and/or above at least one laser engraving device;laser engraving light-influencing structures into at least one surface of the plastic web and/or in the interior of the plastic web with a laser engraving device, to obtain a structured plastic web; andproducing individual light guide plates from the structured plastic web,wherein the laser engraving device is arranged into a continuous extrusion apparatus downstream of an extrusion polishing stack such that the laser engraving occurs at a temperature of the surface of the plastic web, facing the laser engraving device, of 40 to 120° C.2. The method according to claim 1 , wherein:the laser engraving device is integrated into the continuous extrusion apparatus between the extrusion polishing stack and a plastic web separating device; and/ora feed rate of the plastic web to be engraved is between 0.5 and 10 m/min.3. The method of claim 1 , wherein:at least one laser beam is generated by at least one laser; and/orthe at least one laser beam is split into further beams which separately structure the plastic web; and/orthe at least one laser beam is guided by at least one laser head comprising a lens, at least one oscillatory mirror, or both.4. The method according to claim 3 , wherein at least one of the laser engraving device claim 3 , the at least one laser head claim 3 , and the at least one oscillatory mirror are moved parallel claim 3 , transversely claim 3 , or both claim 3 , with respect to a feed direction of the plastic web and/or their distance from the surface of the ...

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Номер записи: 85
11-06-2015 дата публикации

Method and apparatus for internally marking a substrate having a rough surface

Номер: US20150158116A1
Автор: Chuan Yang, Haibin Zhang, Mathew Rekow, Michael J. Darwin
Принадлежит: Electro Scientific Industries Inc

A method for laser processing provides a coating material ( 130 ) applied to a rough surface ( 42 ) of a substrate ( 44 ) to mitigate adverse optical effects that would be caused by roughness of the surface ( 42 ). Laser pulses ( 52 ) of the laser output of suitable parameters can be directed and focused to internally mark the substrate ( 44 ) material without damaging the rough surface ( 42 ) after passing through the coating material ( 130 ).

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Номер записи: 86
11-06-2015 дата публикации

SYSTEM AND METHOD FOR OBTAINING LAMINAE MADE OF A MATERIAL HAVING KNOWN OPTICAL TRANSPARENCY CHARACTERISTICS

Номер: US20150158117A1
Автор: Adam Joseph, Laswell Harry, Munoz David Callejo
Принадлежит:

A method is described for obtaining a plurality of laminae, made of a material having known optical transparency characteristics, from an ingot made of the material, the ingot having an axis of symmetry (X), the method comprising: creating, in the ingot by use of a pulsed laser beam, a plurality of sacrificial layers with modified structure, the plurality of sacrificial layers being distributed along the axis of symmetry (X), the plurality of sacrificial layers dividing the ingot in a plurality of residual layers; subjecting the plurality of sacrificial layers to chemical etching, thereby causing a separation of the residual layers; and detaching the residual layers to produce the plurality of laminae made of the material. 1. A method for obtaining a plurality of laminae , made of a material having known optical transparency characteristics , from an ingot made of the material , the ingot having an axis of symmetry (X) , the method comprising:creating, in the ingot by use of a pulsed laser beam, a plurality of sacrificial layers with modified structure, the plurality of sacrificial layers being distributed along the axis of symmetry (X), the plurality of sacrificial layers dividing the ingot in a plurality of residual layers;subjecting the plurality of sacrificial layers to chemical etching, thereby causing a separation of the residual layers; anddetaching the residual layers to produce the plurality of laminae made of the material.2. The method of wherein the material has a monocrystalline structure and is from the group consisting of: corundum claim 1 , sapphire claim 1 , diamond claim 1 , ruby claim 1 , quartz claim 1 , silicon claim 1 , silicon carbide claim 1 , carborundum claim 1 , fluorite claim 1 , copper claim 1 , germanium claim 1 , gallium nitride claim 1 , gallium arsenide claim 1 , indium phosphide claim 1 , padparadscha claim 1 , tungsten claim 1 , molybdenum oxide claim 1 , and yttrium aluminum garnet (YAG).3. The method of wherein the plurality of ...

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Номер записи: 87
01-06-2017 дата публикации

WAFER PRODUCING METHOD

Номер: US20170151627A1
Автор: Hirata Kazuya
Принадлежит:

A wafer having an off angle α is produced from a hexagonal single crystal ingot having an upper surface, a c-plane exposed to the upper surface, and a c-axis perpendicular to the c-plane. The ingot is supported by a wedge member having a wedge angle α equal to the off angle α, thereby inclining the upper surface of the ingot by the off angle α with respect to a horizontal plane. A modified layer is formed by setting the focal point of a laser beam inside the ingot and next applying it to the upper surface, thereby linearly forming a modified layer inside the ingot and cracks extending from the modified layer along the c-plane. The focal point is moved in the second direction to index the focal point by a predetermined amount. 1. A wafer producing method for producing a wafer having an off angle α from a hexagonal single crystal ingot having an upper surface , a c-plane exposed to the upper surface , and a c-axis perpendicular to the c-plane , the wafer producing method comprising:a supporting step of supporting the ingot through a wedge member having a wedge angle α to a support table having a horizontal supporting surface, the wedge angle α being equal to the off angle α, thereby inclining the upper surface of the ingot by the off angle α with respect to a horizontal plane;a first modified layer forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a fixed vertical position and next applying the laser beam to the upper surface as relatively moving the focal point and the ingot in a first direction perpendicular to a second direction where the off angle α is formed, thereby linearly forming a first modified layer inside the ingot and first cracks extending from the first modified layer along the c-plane;a first indexing step of relatively moving the focal point in the second direction to index the focal point by a predetermined amount; andan initial wafer producing step of separating an initial wafer ...

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Номер записи: 88
31-05-2018 дата публикации

Wafer processing method

Номер: US20180151370A1
Автор: Taewoo Bae
Принадлежит: Disco Corp

A processing method for a wafer having a plurality of streets inclined at 45° relative to a cleavage direction including a laser processing step of positioning a focusing point of a laser beam with a wavelength as to be transmitted through the wafer in the inside of the wafer, and applying the laser beam along the streets to form a plurality of modified layers, overlapping with one another in the wafer thickness direction, inside the wafer along each of the streets. In the laser processing step, m modified layers (m is a natural number not less than n·√2) are formed overlapping with one another in the wafer thickness direction, where n (n is a natural number) is the number of modified layers needing to be formed overlapping with one another in a wafer thickness direction when dividing a wafer having a plurality of streets parallel to a cleavage direction.

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Номер записи: 89
09-06-2016 дата публикации

METHOD AND DEVICE FOR SEPARATING A FLAT WORKPIECE INTO A PLURALITY OF SECTIONS

Номер: US20160158880A1
Автор: Allenstein Frank, Koitzsch Matthias, Lewke Dirk, Tobisch Alexander, Zühlke Hans-Ulrich
Принадлежит:

A method of separating a workpiece into a plurality of sections includes generating one or a plurality of lines of modified material along one or a plurality of predefined separating lines in the workpiece in a first step by local material processing using a laser beam through a surface of the workpiece, which results in a reduction of breaking stress of the workpiece along the separating lines, and dividing, in a second step, the workpiece into the sections along the separating lines by thermal laser beam separation, wherein the one or the plurality of lines are generated completely or at least in portions at a distance from the surface in the workpiece. 126-. (canceled)27. A method of separating a workpiece into a plurality of sections comprising:generating one or a plurality of lines of modified material along one or a plurality of predefined separating lines in the workpiece in a first step by local material processing using a laser beam through a surface of the workpiece, which results in a reduction of breaking stress of the workpiece along the separating lines, anddividing, in a second step, the workpiece into the sections along the separating lines by thermal laser beam separation, whereinthe one or the plurality of lines are generated completely or at least in portions at a distance from the surface in the workpiece.28. The method as claimed in claim 27 , wherein the one or the plurality of lines are generated such that they start at the surface of the workpiece and then extend at a varying distance with respect to the surface along the separating line in the workpiece.29. The method as claimed in claim 27 , wherein the one or the plurality of lines are generated such that they start at a marginal position of each section at the surface and then extend at a varying distance with respect to the surface along the separating line in the workpiece.30. The method as claimed in claim 27 , wherein the one or the plurality of lines are generated such that they ...

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Номер записи: 90
09-06-2016 дата публикации

Wafer producing method

Номер: US20160158881A1
Автор: Kazuya Hirata, Kunimitsu Takahashi, Yoko Nishino
Принадлежит: Disco Corp

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot includes a separation start point forming step of setting the focal point of a laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. In the separation start point forming step, the laser beam is applied to the ingot plural times with the focal point of the laser beam set at the modified layer previously formed, thereby separating the cracks from the modified layer.

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Номер записи: 91
09-06-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160158882A1
Автор: Hirata Kazuya, Nishino Yoko, Takahashi Kunimitsu
Принадлежит:

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. The wafer producing method includes a separation start point forming step of setting the focal point of a laser beam to the inside of the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. A plate-shaped member having a thickness corresponding to the thickness of the wafer is separated from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the ...

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Номер записи: 92
09-06-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160158883A1
Автор: Hirata Kazuya, Nishino Yoko, Takahashi Kunimitsu
Принадлежит:

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot is disclosed. The wafer producing method includes a separation start point forming step of forming a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer to thereby form a separation start point in the ingot. The separation start point forming step includes a first separation start point forming step of setting the focal point of a laser beam at a first depth which is N times (N is an integer not less than 2) the depth corresponding to the thickness of the wafer from the upper surface of the ingot and next applying the laser beam to the ingot to thereby form a first separation start point composed of a first modified layer and first cracks extending therefrom. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from ingot; a modified layer forming step of ...

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Номер записи: 93
09-06-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160158892A1
Автор: Hirata Kazuya, Nishino Yoko, Takahashi Kunimitsu
Принадлежит:

A wafer producing method produces a hexagonal single crystal wafer from a hexagonal single crystal ingot. The method includes a separation start point forming step of setting the focal point of a laser beam to the inside of the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. The separation start point forming step includes an indexing step of relatively moving the focal point in a direction of formation of an off angle to thereby index the focal point by a predetermined index amount. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from ingot; a ...

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Номер записи: 94
08-06-2017 дата публикации

METHOD AND DEVICE FOR THE LASER-BASED WORKING OF TWO-DIMENSIONAL, CRYSTALLINE SUBSTRATES, IN PARTICULAR SEMICONDUCTOR SUBSTRATES

Номер: US20170157700A1
Автор: Bohme Rico, Weber Daniel
Принадлежит:

The present invention relates to a method for laser-based machining of a planar, crystalline substrate in order to separate the substrate into a plurality of parts, in which the laser beam of a laser is directed, for machining the substrate, onto the latter, in which, with an optical arrangement positioned in the beam path of the laser, a laser beam focal surface which is expanded, viewed both along the beam direction and viewed in precisely a first direction perpendicular to the beam direction, but is not expanded in a second direction which is both perpendicular to the first direction and to the beam direction, is formed from the laser beam radiated onto said arrangement on the beam output side of the optical arrangement, the substrate being positioned relative to the laser beam focal surface such that the laser beam focal surface in the interior of the substrate, along an expanded surface portion of the substrate material, produces an induced absorption by means of which crack formations in the substrate material induced along this expanded surface portion are effected. 1. Method for laser-based machining of a planar , crystalline substrate in order to separate the substrate into a plurality of parts ,{'b': 2', '2', '3', '1, 'i': a', 'f, 'in which the laser beam (, ) of a laser () is directed, for machining the substrate (), onto the latter,'}{'b': 6', '3', '2', '2', '6', '6, 'i': f', 'a, 'in which, with an optical arrangement () positioned in the beam path of the laser (), a laser beam focal surface () which is expanded, viewed both along the beam direction (z) and in precisely a first direction (y) perpendicular to the beam direction (z), but which is not expanded in a second direction (x) which is both perpendicular to the first direction (y) and to the beam direction (z), is formed, from the laser beam () radiated onto said optical arrangement (), on the beam output side of the optical arrangement (),'}{'b': 1', '2', '2', '1', '2', '2, 'i': f', 'f', 'c', 'c, ...

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Номер записи: 95
08-06-2017 дата публикации

INTERFACE BLOCK; SYSTEM FOR AND METHOD OF CUTTING A SUBSTRATE BEING TRANSPARENT WITHIN A RANGE OF WAVELENGTHS USING SUCH INTERFACE BLOCK

Номер: US20170158550A1
Автор: Genier Michael Lucien
Принадлежит:

The present application describes a system for cutting a substrate () that is transparent within a predetermined range of wavelengths in the electromagnetic spectrum and will include an edge when extracted from a sheet of substrate (). The system generally includes a laser () capable of emitting light along a light path and of a predetermined wavelength that is within the range of wavelengths in which the substrate () is transparent; an optical device () positioned in the light path of the laser; and an interface block () composed of a material that is transparent over at least a portion of the predetermined range of wavelengths in the electromagnetic spectrum in which the substrate () is also transparent, wherein said interface block () is positioned in said light path and between the substrate () and said optical element (). 1. A system for cutting a substrate that is transparent within a predetermined range of wavelengths in the electromagnetic spectrum , said substrate will include at least one edge when extracted from a sheet , the system comprising:a. a laser capable of emitting light along a light path and of a predetermined wavelength that is within the range of wavelengths in which the substrate is transparent;b. an optical element positioned in said light path of said laser; andc. an interface block composed of a material that is transparent over at least a portion of the predetermined range of wavelengths in the electromagnetic spectrum in which the substrate is also transparent, wherein said interface block is positioned in said light path and between the substrate and said optical element.2. The system according to claim 1 , wherein said interface block is shaped in the form of a rectangular parallelepiped.3. The system according to claim 1 , wherein said interface block is shaped in the form of a triangular parallelepiped.4. The system according to claim 1 , wherein said interface block is composed of a gradient index material.5. The system according ...

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Номер записи: 96
08-06-2017 дата публикации

METHOD AND SYSTEM FOR FORMING PERFORATIONS

Номер: US20170158551A1
Автор: Bookbinder Dana Craig, Logunov Stephan Lvovich, Nieber Albert Roth, Tandon Pushkar, Tsuda Sergio
Принадлежит:

The embodiments disclosed herein relate to methods, systems, and system components for creating and arranging small (micron and smaller) defects or perforations in transparent materials in a particular manner, and, more particularly, to the arrangement of these defects, each of which has an average crack length, in a predetermined spaced-apart relation (each defect separated from an adjacent defect by a predetermined distance) defining a contour in a transparent material to lower the relative interface fracture toughness for subsequent planned induced separation. 1. A system for forming a plurality of defects defining a contour in a workpiece , said workpiece comprising a glass substrate comprising at least one layer and having a normalized pre-defect formation fracture toughness rating (1.0) , the system comprising:a laser assembly configured to provide a plurality of laser pulse emissions, each laser pulse emission of the plurality of laser pulse emissions having predetermined characteristics selected from the group consisting of wavelength, power level, pulse duration, and a laser pulse emission rate; each said different focal line is separated from an adjacent different focal line by a predetermined distance,', 'a corresponding defect with an average crack length is formed in said workpiece along each different focal line to form a plurality of defects defining a contour in said workpiece, and', 'each of said defects being substantially generated by induced absorption;, 'an optical assembly coupled to the laser assembly, the optical assembly being configured and moveable to focus each laser pulse emission to a different focal line at a different position within said workpiece, whereina workpiece holder configured to hold said workpiece at a position relative to the optical assembly, said workpiece holder or the optical assembly being configured to provide a relative motion between said workpiece and the optical assembly; anda controller coupled to the laser ...

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Номер записи: 97
16-06-2016 дата публикации

TOOL AND METHOD FOR REMOVING GAS HYDRATES FROM THE SURFACE OF SUBSEA OIL AND GAS EXPLORATION AND PRODUCTION EQUIPMENT THROUGH LASER RADIATION

Номер: US20160167168A1
Автор: Pereira Masiero Leone
Принадлежит:

A tool and related method for removing unwanted gas hydrates from the surface of equipment used in subsea exploration and production. The tool includes a main vessel and a power cable linked together by a connector. Inside the vessel a laser device is connected to an adjustable focus collimator by a cable, with the wavelength emitted by the laser being between 200 nm and 930 nm. When the radiation reaches the subsea exploration equipment it causes the heating thereof, which in turn heats the hydrate through conduction, breaking down the hydrate formation from the inside out. The front lid of the tools includes a window fitted with anti-reflection film that forms an interface between the vessel and the aqueous medium. 1. A tool for removing unwanted gas hydrates from the surface of equipment used in subsea oil and gas exploration and production by laser radiation , the tool comprising:a) a main vessel as its housing, holding a volume V filled with gases including air or nitrogen;b) a power cable inserted in the vessel through a first lid, with the vessel and said cable linked together by a connector; and, inside said vessel,c) a laser device seated on a first base and connected to an adjustable focus collimator seated on a second base by a cable, with the wavelength emitted by said laser and as the water and the hydrate are transparent or semi-transparent thereto, and with said wavelength being between 200 nm and 930 nm, whereby when the radiation reaches said subsea exploration equipment it causes heating thereof, which in turn heats said unwanted gas hydrates through conduction, breaking down said unwanted gas hydrates from the inside out; andd) said second lid including a window providing an interface between the vessel and an aqueous medium, with said window being fitted with anti-reflection film matching a refraction index with said medium inside said vessel and anti-reflection film matching the refraction index of said medium outside said vessel.2. The tool as ...

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Номер записи: 98
14-06-2018 дата публикации

METHOD AND APPARATUS FOR PERFORMING LASER CURVED FILAMENTATION WITHIN TRANSPARENT MATERIALS

Номер: US20180161916A1
Автор: HOSSEINI S. ABBAS
Принадлежит: ROFIN-SINAR TECHNOLOGIES INC.

Systems and methods are described for forming continuous curved laser filaments in transparent materials. The filaments are preferably curved and C-shaped. Filaments may employ other curved profiles (shapes). A burst of ultrafast laser pulses is focused such that a beam waist is formed external to the material being processed without forming an external plasma channel, while a sufficient energy density is formed within an extended region within the material to support the formation of a continuous filament, without causing optical breakdown within the material. Filaments formed according to this method may exhibit lengths in the range of 100 μm-10 mm. An aberrated optical focusing element is employed to produce an external beam waist while producing distributed focusing of the incident beam within the material. Optical monitoring of the filaments may be employed to provide feedback to facilitate active control of the process. 120-. (canceled)21. A method for machining a workpiece , comprising the steps of:providing a laser beam having bursts of ultrafast laser pulses, the workpiece being transparent to the laser beam;locating an optic in the path of the laser beam that induces a cubic phase in the laser beam;focusing the laser beam to form a distributed focus, the distributed focus having a C-shape due to the cubic phase in the focused laser beam;locating the workpiece such that at least a portion of the C-shaped distributed focus is within the workpiece, the focused laser beam having sufficient energy density to form a continuous C-shaped filament within the workpiece, the continuous filament inducing a C-shaped material modification in the workpiece; andtranslating the workpiece laterally with respect to the laser beam to form an array of C-shaped material modifications that define a scribed path for cleaving the workpiece.22. The method of claim 21 , wherein the optic that induces the cubic phase is selected from the group consisting of a cubic phase plate claim ...

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Номер записи: 99
14-06-2018 дата публикации

LASER PROCESSING APPARATUS

Номер: US20180161920A1
Автор: Nomura Hiroshi, Tsukamoto Masahiro
Принадлежит:

Disclosed herein is a laser processing apparatus for processing a plate-shaped workpiece by applying a laser beam to the workpiece. The laser processing apparatus includes a cassette table for placing thereon a cassette in which a plurality of workpieces are accommodated, a carrying-out unit for carrying out the workpiece from the cassette placed on the cassette table, and a laser beam applying unit including a focusing unit for applying the laser beam to the workpiece held on the chuck table. The carrying-out unit carries out the workpiece having been processed by the laser beam applying unit from the chuck table, and accommodates the workpiece into the cassette placed on the cassette table. 1. A laser processing apparatus for processing a plate-shaped workpiece by applying a laser beam to the workpiece , the laser processing apparatus comprising:a cassette table for placing thereon a cassette in which a plurality of the workpieces are accommodated;carrying-out means for carrying out the workpiece from the cassette placed on the cassette table;temporary placing means for temporarily placing the workpiece carried out by the carrying-out means;carrying means for carrying the workpiece from the temporary placing means to a chuck table;imaging means for detecting a region to be processed of the workpiece held on the chuck table; andlaser beam applying means including a focusing unit for applying a laser beam to the workpiece held on the chuck table,wherein the carrying-out means carries out the workpiece having been processed by the laser beam applying means from the chuck table and accommodates the workpiece into the cassette placed on the cassette table.2. The laser processing apparatus according to claim 1 ,wherein let a direction in which the carrying-out means is disposed in relation to the temporary placing means be an X-axis direction, and let a direction orthogonal to the X-axis direction be a Y-axis direction, then a receiving position at which the chuck table ...

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Номер записи: 100