PREPARATION OF CHALCOGENIDE ALLOYS

PROCEDURE FOR THE FORMATION OF LEWIS LIQUID GASSYSTEMEN AND RÜCKGWINNUNG FROM LEWIS GAS

Verfahren und Vorrichtung zur Herstellung von Metallchalkogeniden

Gezeigt wird ein Verfahren zur Herstellung von Metallchalkogeniden, insbesondere von Metallsulfiden, wie Zinnsulfid, wobei das Metall und das Chalkogen bei Temperaturen von 200-1700°C, insbesondere von 800-1200°C, in einem Behälter (2, 3) zu Metallchalkogeniden umgesetzt werden. Um den Einsatz von Metallpulver zu vermeiden, ist vorgesehen dass Metall in stückiger Form in den Behälter (2, 3) zugeführt wird, dass das Metall auf 800-1200°C erhitzt und geschmolzen wird, dass das Chalkogen, das feste oder flüssige Form aufweist, erst bei Vorliegen einer Metallschmelze in den Behälter (2, 3) zugeführt wird.

Procédé de fabrication d'un matériel électrophotographique

PROCEDE DE REDUCTION DE COMPOSES AYANT UNE FONCTIONNALITE ELECTRONEGATIVE REDUCTIBLE, PAR L'HYDRURE DE METAL ALCALIN

PROCEDE POUR REDUIRE DES COMPOSES AYANT UNE FONCTIONNALITE ELECTRO-NEGATIVE REDUCTIBLE. CE PROCEDE CONSISTE DANS LA MISE EN OEUVRE DE LADITE REDUCTION DANS UN MILIEU REACTIONNEL QUI COMPREND UN AGENT REDUCTEUR CONSTITUE PAR UN HYDRURE D'UN METAL ALCALIN, ET UN CATALYSEUR CONSTITUE PAR LE BOROHYDRURE D'UN METAL ALCALIN, AINSI QU'UN SOLVANT ETHERE DANS LEQUEL LE CATALYSEUR FORME PAR LE BOROHYDRURE EST SOLUBLE.

IRON CHALCOGENIDE NANOCOMPOSITE AND THE METHOD FOR PREPARATION THEROF

그래핀과 같은 서브마이크론의 2 차원 재료의 연속 생산 공정

... 현탁액을 서브마이크론 두께의 입자 획분의 현탁액과 잔류 입자 획분의 현탁액으로 분리하는, 고체 현탁액으로부터 서브마이크론 두께의 층상 고체 입자를 연속적으로 분리하는 시스템 및 방법으로서, 이 방법은 연속 원심분리 장치를 제공하는 단계; 고체 현탁액(고체 현탁액은 액체 연속상 중에 서브마이크론 두께의 고체 입자를 포함함)으로 서브마이크론 두께의 층상 고체 입자의 현탁액을 제공하는 단계; 및 상기 장치 내에서 고체 현탁액을 분리하는 단계를 포함한다.

Supplying method and supplier of hydrogen selenide-mixed gas

Способ получения селеноводорода

Quantum dot solar cells and methods for manufacturing such solar cells

Verfahren und Vorrichtung zur Herstellung von Metallchalkogeniden

Gezeigt wird ein Verfahren zur Herstellung von Metallchalkogeniden, insbesondere von Metallsulfiden, wie Zinnsulfid, wobei das Metall und das Chalkogen bei Temperaturen von 200-1700°C, insbesondere von 800-1200°C, in einem Behälter (2, 3) zu Metallchalkogeniden umgesetzt werden. Um den Einsatz von Metallpulver zu vermeiden, ist vorgesehen dass Metall in stückiger Form in den Behälter (2, 3) zugeführt wird, dass das Metall auf 800-1200°C erhitzt und geschmolzen wird, dass das Chalkogen, das feste oder flüssige Form aufweist, erst bei Vorliegen einer Metallschmelze in den Behälter (2, 3) zugeführt wird.

금속 칼코게나이드 화합물 및 이의 제조 방법

... 신규 금속 칼코게나이드 화합물 및 상기 금속 칼코게나이드 화합물의 제조 방법에 관한 것이다.

METAL/TWO-DIMENSIONAL NANOMATERIAL HYBRID HEATING ELEMENT AND MANUFACTURING METHOD THEREOF

The present invention relates to a metal/two-dimensional nanomaterial hybrid heating element and a manufacturing method thereof. The metal/two-dimensional nanomaterial hybrid heating element of the present invention comprises: a substrate; and a hybrid particle layer including a metal which is formed on a top portion of the substrate and is a core, and a two-dimensional nanomaterial which surrounds the outer wall of the metal in a shell shape. Therefore, the metal/two-dimensional nanomaterial hybrid heating element according to the present invention can obtain effects that the metal is prevented from being oxidized in the air, and thermal conductivity of the metal/two-dimensional nanomaterial hybrid heating element is increased at the same time by synthesizing the two-dimensional nanomaterial with excellent thermal conductivity on the outer wall of a non-precious metal based metal having high oxidation degree. Further, the manufacturing method according to the present invention can obtain ...

Method and apparatus for supplying gas mixture including hydrogen selenide

A calibration gas is made to flow, at identical flow rates, in a flow rate control means, which is provided at a supply channel for a raw material gas and which is used to control a flow rate of a hydrogen selenide gas as a raw material gas, and in a flow rate measurement means used for calibration; and the set value of the flow rate of the hydrogen selenide gas made to flow by the flow rate control means is corrected based on a difference between the flow rates of the calibration gas measured by each of the flow rate control means and the flow rate measurement means.

METHOD FOR REDUCING REDUCIBLE COMPOUNDS HAVING FUNCTIONALITY ELECTRONEGATIVE, ALKALI METAL HYDRIDE

Electrically conductive thin films

An electrically conductive thin film including a compound represented by Chemical Formula 1 or Chemical Formula 2 and having a layered crystal structure: M1Te2 Chemical Formula 1 wherein M1is titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), tantalum (Ta), or niobium (Nb); and M2Se2 Chemical Formula 2 wherein M2is vanadium (V) or tantalum (Ta).

A Gamma Radiation Source

A gamma radiation source comprising 75Selenium or a precursor thereof, is disclosed wherein the 75Selenium is provided in the form of one or more thermally stable compounds, alloys or mixtures with one or more nonmetals which upon irradiation do not produce products capable of sustained emission of radiation which would unacceptably interfere with the gamma radiation of 75Selenium. A further gamma radiation source is disclosed comprises 75Selenium or a precursor thereof, wherein the 75Selenium is provided in the form of one or more thermally stable compounds, alloys or mixtures with one or more metals or nonmetals, the neutron irradiation of which does produce products capable of sustained emission of radiation which would acceptably complement the gamma radiation of 75Selenium. Further, the gamma radiation source may have components that are separately irradiated before being combined and the components may be of natural isotopic composition or of isotopically modified composition so that ...

РАСТВОР ДЛЯ ГИДРОХИМИЧЕСКОГО ОСАЖДЕНИЯ ПОЛУПРОВОДНИКОВЫХ ПЛЕНОК СЕЛЕНИДА ИНДИЯ

FIELD: chemistry. SUBSTANCE: invention relates to the technology of obtaining indium selenide (III), widely used in microelectronics for producing nuclear radiation detectors and creating solar radiation inverters as the basis for such material as copper diselenide (I) and indium CuInSe 2 . The solution for hydrochemical precipitation of a thin semiconductor film of indium selenide (III) contains an indium (III) salt, selenocarbamide, tartaric acid and sodium sulfite at the following concentrations of reagents, mol/l: indium (III) salt 0.01-0.15; selenocarbamide 0.005-0.1; tartaric acid 0.01-0.06; sodium sulfite 0.005-0.1. Due to the presence of such additives as selenocarbamide and sodium sulfite, the process kinetics and the precipitation conditions are modified in comparison with the prototype. Selenocarbamide is a source of selenide ions. Sodium sulfite acts as an antioxidant, preventing the selenocarbamide oxidation in the solution. Tartaric acid simultaneously complexes indium ions and increases the buffering capacity of the reaction mixture, maintaining the pH of the solution at a certain level. EFFECT: layers obtained from said precipitation solution have good adhesion to substrate material and a mirror surface, their thickness is equal to 300 nm. 1 tbl, 2 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (51) МПК C23C 18/12 C23C 18/16 C01G 15/00 C01B 19/04 C30B 29/46 (11) (13) 2 617 168 C1 (2006.01) (2006.01) (2006.01) (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ФОРМУЛА (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ 2016113974, 11.04.2016 (24) Дата начала отсчета срока действия патента: 11.04.2016 Дата регистрации: Приоритет(ы): (22) Дата подачи заявки: 11.04.2016 (45) Опубликовано: 21.04.2017 Бюл. № 12 optical and microscopic properties of chemically deposited In 2 Se 3 thin films, "Journal of Materials Science: Materials in Electronics", 2008, Vol.19, No.12, p.p.1252-1257. US 2012094431 A1, 19.04.2012. MANIKSHETE A.H. et al, ...

КОМПОЗИЦИИ, СОДЕРЖАЩИЕ ХАЛЬКОГЕНИДЫ, И СВЯЗАННЫЕ СПОСОБЫ

... 1. Способ получения стабильной композиции, содержащей восстановленную форму халькогенида, включающий смешивание халькогена или кислоты халькогена и восстановителя в среде с пониженным содержанием кислорода в условиях и в течение периода времени, достаточных для обеспечения окисления большей части восстановителя и восстановления большей части халькогена, с получением, таким образом, стабильной композиции, содержащей восстановленную форму халькогенида.2. Способ по п. 1, в котором указанный халькоген представляет собой серу или селен.3. Способ по п. 1, в котором указанная кислота халькогена представляет собой селенистую кислоту, или селенит натрия, или элементарный селен.4. Способ по п. 1, в котором восстановитель имеет восстановительный потенциал (Е°) меньше или равный приблизительно 0,4 V.5. Способ по п. 1, в котором указанный восстановитель представляет собой борогидрид натрия (NaBH).6. Способ по п. 1, в котором молярное отношение восстановителя к халькогену или к кислоте халькогена составляет ...

PREPARATION OF CHALCOGENIDE ALLOYS

Improvements in or relating to the treatment of semiconductor materials

Hydrides are prepared by passage of activated hydrogen over an element. Elements specified are phosphorus, arsenic, antimony, boron, sulphur and selenium. Activation means specified are electric discharge devices and sources of high energy radiation. The degree of reaction may be controlled by varying the distance between the activation means and the elements, or by controlling the degree of vibration by varying the pressure or the distance between electrodes.ALSO:The invention comprises a method of introducing an element into a semiconductor by reacting the element with activated hydrogen and contacting the hydride or hydrides formed with the heat-treated semi-conductor. Activation means specified are electric discharge devices and sources of high energy radiation. Elements specified are phosphorus, arsenic, antimony, boron, sulphur and selenium. Semiconductors specified are germanium, silicon, and compounds of the AIIIBV series, e.g. a combination of boron, aluminium, gallium or indium ...

A nano-crystal preparation method

Improvements with the methods for the preparation and the use of chemical compounds, in particular of the hydrides, in adjustable quantities and devices for their application

METHOD FOR MANUFACTURING TRANSITION METAL CHALCOGENIDES BY USING LIQUID PRECURSOR

Disclosed is a method for manufacturing transition metal chalcogenides by dissolving a transition metal precursor which exists in a solid state at room temperature in organo chalcogenide and organic solvents, manufacturing the same in a liquid state and using the same as a liquid precursor. The transition metal chalcogenides are deposited on a substrate. By using the liquid precursor, a process of vaporizing existing chalcogenides in a solid state is not needed and the supply amount can be controlled in an easy manner so process costs are reduced. Also, the deposition thickness can be controlled in an easy manner. COPYRIGHT KIPO 2017 ...

Homogeneous anaerobic stable quantum dot concentrates

CONTACT METHODS FOR FORMATION OF LEWIS GAS/LIQUID SYSTEMS AND RECOVERY OF LEWIS GAS THEREFROM

액상 전구체를 이용하는 전이금속 칼코겐 화합물의 제조방법

... 상온에서 고체 상태로 존재하는 전이금속 전구체를 오가노 칼코게나이드 및 유기용매에 용해하여 액상으로 제조하고, 이를 액상 전구체로 이용하는 전이금속 칼코겐 화합물의 제조방법이 개시된다. 전이금속 칼코겐 화합물은 기판 상에 증착된다. 액상 전구체를 적용함으로써, 기존의 고체 상태의 칼코겐 화합물을 기화시키는 공정이 필요하지 않게 되고 공급량을 용이하게 제어할 수 있게 되므로 공정 단가를 낮춘다. 또한, 증착 두께를 제어하는 것이 용이하다.

THERMOELECTRIC GENERATING ELEMENT AND METHOD FOR MANUFACTURING THERMOELECTRIC GENERATING ELEMENT

A thermoelectric generating element disclosed in the present application comprises: a first electrode (E1) and a second electrode (E2) arranged opposite each other; and a laminated body (10L) having a first principal surface and a second principal surface, and a first end surface (25) and a second end surface (27) which are located between the first principal surface and the second principal surface and electrically connected to the first electrode and the second electrode respectively. The laminated body has a structure wherein a first layer made of a first material including metal and particles that have a lower heat conductivity than the metal and are dispersed in the metal, and a second layer made of a second material that has a higher Seebeck coefficient and lower heat conductivity than the first material are alternately laminated. The lamination planes between the plurality of first layers and plurality of second layers are inclined relative to the direction along which the first ...

BROAD-EMISSION NANOCRYSTALS AND METHODS OF MAKING AND USING SAME

In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to an inorganic nanoparticle capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the second electromagnetic region comprises an at least about 50 nm wide band of wavelengths and to methods for the preparation thereof. In further aspects, the invention relates to a frequency converter, a light emitting diode device, a modified fluorescent light source, an electroluminescent device, and an energy cascade system comprising the nanoparticle of the invention. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

APPARATUS, PROCESS, AND COMPOSITION FOR IN-SITU GENERATION OF POLYHYDRIDIC COMPOUNDS OF GROUP IV-VI ELEMENTS

A system for generating a gaseous polyhydridic Group IV-VI compound, comprising a vessel containing a solid precursor metal compound for the polyhydridic Group IV-VI compound, and a source of a fluid-phase protonic activator compound reactive with the precursor compound to yield as reaction product (a) the polyhydridic compound and (b) a solid reaction product compound containing the metal moiety, e.g., a non-volatile metal salt, together with means for flowing the activator compound from the source thereof to the vessel containing the solid precursor compound. The precursor compound may suitably comprise a metal moiety such as lithium, sodium, magnesium, zinc, potassium, aluminum, and intermetallic complexes and alloys thereof. In a preferred aspect, wherein arsine is generated, the precursor compound may suitably comprise a metal arsenide, and the protonic activator compound is water or an acid such as hydrogen chloride. An appertaining method of generating such polyhydridic Group IV-VI ...

Method for safe handling of unstable hydride gases

A method for safely handling unstable hydrides, such as germane, in an enclosure which has one or more openings, by partitioning the enclosure into smaller but interconnected volumes and providing heat storage and transfer within the enclosure to rapidly remove heat from any incipient hot spot before it can reach a temperature where it could rapidly propagate to the rest of the enclosure. A preferred embodiment includes where the partitioning material comprises part or all of the means to store the heat and has a large surface area to rapidly adsorb heat from the gases in the smaller volume. An even more preferred embodiment is where the partitioning material comprises materials that can be poured into the enclosure. The use of sensible heat, phase change or chemical reactions are feasible ways to store the heat.

Method for purifying gaseous hydrides

Способ получения селенида ванадия для активной части источника гамма-излучения

Изобретение относится к ядерной технике, преимущественно к области изготовления источников гамма-излучения, используемых в различных областях промышленности, например в гамма-дефектоскопии для проведения радиографического контроля. Задачей предлагаемого технического решения является сокращение трудоемкости и времени протекания процесса получения селенида ванадия VSeдля формирования активной части источников гамма-излучения, упрощение технологического оборудования и повышение безопасности процесса. Технический результат в предлагаемом способе получения селенида ванадия достигается за счет смешивания тонкодисперсных порошков селена и ванадия с размером частиц не более 200 мкм и последующей двухступенчатой термической обработки в инертном герметичном контейнере. 1 з.п. ф-лы, 2 ил.

Quantum dot solar cell and method of manufacture

A quantum dot solar cell 10 is manufactured in a number of stages including, dissolving a cadmium â containing compound in a first non-aqueous solvent to form a cadmium precursor solution, dissolving a selenium-containing compound in a second non-aqueous solvent to form a selenium precursor solution, combining the cadmium and selenium precursor solution to form a mixed solution , exposing a electron conductor film 16 to the mixed solution, such that the mixed solution causes a cadmium and selenium quantum dot layer 12 on the electron conductor film. In one embodiment , the cadmium containing compound may include a cadmium selenium or a cadmium â halogen compound or both, and may also contain one or more of CdSe, CdS, CdTe, CdCl2, CdBr2, and Cd(BH3C02)2. The selenium containing compound includes a seleniumâ amine and or a selenium-hydrazine compound, and may further comprise of any of H2Se, Na2SeS03, selenourea, or selenium containing hydrazine compound. The non aqueous solvent may be similar ...

Separation process for laminar materials, such as graphene

A scalable process for producing exfoliated defect-free, non-oxidised 2-dimens ional materials in large quantities

Contact methods for formation of lewis gas/liquid systems and recovery of lewis gas therefrom

Contact methods for formation of lewis gas/liquid systems and recovery of lewis gas therefrom

Method for the formation of PbSe nanowires in non-coordinating solvent

This disclosure concerns a method of making nanowires in a single flask and in non-coordinating solvent involving the reaction of PbO with oleic acid to produce Pb oleate, heating the Pb oleate to a preferred temperature with additional coordinating ligands, injecting a solution of Se to produce a second solution, heating the second solution, and maintaining the temperature, resulting in nucleation and growth of PbSe nanowires.

Способ получения коллоидных квантовых точек селенида кадмия в оболочке хитозана

FIELD: nanotechnologies.SUBSTANCE: invention relates to nanotechnology, specifically nanotechnology of interaction, sensors or actuation, for example, quantum dots as biomarkers. Method of producing quantum dots of cadmium selenide in a chitosan shell is based on interaction of selenide ions obtained from selenosulphate with cadmium (II) ions distributed in an aqueous solution of chitosan at room temperature.EFFECT: developed method is rather simple, economical, nontoxic and enables to obtain quantum points of cadmium selenide coated with chitosan, which can be used as biomarkers, at room temperature, because presence on their surface of a shell from molecules of chitosan provides them with good interaction with biological objects.1 cl, 3 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 695 130 C1 (51) МПК A61K 49/18 (2006.01) C01B 19/04 (2006.01) C01G 11/00 (2006.01) A61K 9/51 (2006.01) B82Y 15/00 (2011.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК A61K 49/18 (2019.02); C01B 19/04 (2019.02); C01G 11/00 (2019.02); B82Y 15/00 (2019.02) (21)(22) Заявка: 2018130245, 20.08.2018 (24) Дата начала отсчета срока действия патента: 22.07.2019 Приоритет(ы): (22) Дата подачи заявки: 20.08.2018 (45) Опубликовано: 22.07.2019 Бюл. № 21 2 6 9 5 1 3 0 R U (54) Способ получения коллоидных квантовых точек селенида кадмия в оболочке хитозана (57) Реферат: Изобретение относится к области Разработанный способ достаточно прост, нанотехнологии, а именно нанотехнологии экономичен, нетоксичен и позволяет при интерактивного взаимодействия, датчиков или комнатной температуре получать квантовые приведения в действие, например, квантовых точки селенида кадмия, покрытые хитозаном, точек в качестве биомаркеров. Способ получения которые могут использоваться в качестве квантовых точек селенида кадмия в оболочке биомаркеров, т.к. наличие на их поверхности хитозана основан на взаимодействии селенидоболочки из молекул хитозана обеспечивает им ионов, ...

Способ получения триселенида натрия

) СПОСОБ ПОЛУЧЕНИЯ ТРЙСЕЛЕНИДА НАТРИЯ путем взаимодействи  элементного селена с натрийсодержащим компонентом в щелочном растворе, о тличающийс  тем, что, с целью повьшени  чистоты продукта, в качестве щелочного раствора и натрийсодержащего компонента используют деоксигенизированный раствор едкого натра с концентрацией 0,1-0,2 М и взаимодействие осуществл ют методом внутреннего злектролиза в двухкамерном электролизере с использованием катода из ртути и анода из амальгам 1 натри  и при потенциале ртутного катода (-0,88)-(-1 ,9) В относительно потенциала насыщенного калломельного электрода. ) METHOD OF OBTAINING SODIUM TRYCELENIDE by reacting elemental selenium with a sodium-containing component in an alkaline solution, in which, in order to increase the purity of the product, a deoxygenated sodium hydroxide solution with a concentration of 0.1-0.2 M is used as an alkaline solution and sodium-containing component and the interaction is carried out by the method of internal electrolysis in a two-chamber electrolyzer using a mercury cathode and anode from sodium amalgam 1 and at a potential of a mercury cathode (-0.88) - (- 1, 9) the potential of the saturated callomer electrode.

Verfahren zum Stabilisieren von zur Herstellung von Fungiziden geeignetem Selendisulfid, das durch Zusatz eines hydrophilen kolloidalen Suspensionsmittels aktiviert ist

Separation process for laminar materials, such as graphene

electrophotographic element comprising a formed layer of a sulphur and selenium alloy

태양 전지용 셀렌화 수소 혼합가스의 공급방법 및 공급장치

본 발명의 태양 전지용 셀렌화 수소 혼합가스의 공급방법은, 기반가스 공급 유로(L1)로부터 공급되는 불활성 가스와, 원료가스 공급 유로(L2)에서 공급되는 100 % 셀렌화 수소가스를 혼합하는 것에 의해 소정의 농도로 조정한 셀렌화 수소 혼합가스를 공급하는 공정을 가지며, 상기 기반가스 공급 유로(L1)와 상기 원료가스 공급 유로(L2)에는 상호 연통하는 바이패스 유로(L7)가 설치되어 있으며, 소정의 량의 상기 100 % 셀렌화 수소가스를 상기 원료가스 공급 유로(L2)로부터 도출한 후에, 상기 바이패스 유로(L7)를 통해 상기 원료가스 공급 유로(L2)로부터 상기 불활성 가스를 도출하여 소정의 농도의 셀렌화 수소 혼합가스를 조제하고, 또한 상기 원료가스 공급 유로(L2)에 잔존하는 셀렌화 수소의 체적 농도를 10 % 이하로 한다.

Direct assembly of hydrophobic nanoparticles to multifunction structures

A process that allows convenient production of multifunctional composite particles by direct self-assembly of hydrophobic nanoparticles on host nanostructures containing high density surface thiol groups is present. Hydrophobic nanoparticles of various compositions and combinations can be directly assembled onto the host surface through the strong coordination interactions between metal cations and thiol groups. The resulting structures can be further conveniently overcoated with a layer of normal silica to stabilize the assemblies and render them highly dispersible in water for biomedical applications. As the entire fabrication process does not involve complicated surface modification procedures, the hydrophobic ligands on the nanoparticles are not disturbed significantly so that they retain their original properties such as highly efficient luminescence. Multifunctional nonspherical nanostructures can be produced by using mercapto-silica coated nano-objects of arbitrary shapes as hosts ...

SYNTHESIS OF OXYGEN AND BORON TRIHALOGENIDE FUNCTIONALIZED TWO-DIMENSIONAL LAYERED MATERIALS IN PRESSURIZED MEDIUM

A method that uses a pressurized reactive medium composed of inert solvents such as pressurized liquid or supercritical fluid carbon dioxide (C02), and sulfur hexafluoride (SF6) and reactive dissolved species ozone (03) and/or boron trifluoride (BF3) and general boron trihalogenides (BX3) to react with two-dimensional (2D) layered materials and thereby synthesize covalently oxygen and/or BX3 functionalized exfoliated 2D layered materials. When 2D layered materials are dispersed in these reactive liquids or fluids by ultrasound sonication or high shear mixing, a simultaneous covalent functionalization and exfoliation of the 2D layered materials happens. Following attainment of the required extent of functionalization and exfoliation, the unreacted 03, BX3, SF6 and C02 can be easily removed as gases by decompression leaving behind the solid phase, thereby leading to efficient and economical production of functionalized and exfoliated 2D layered materials. 1. A method for the synthesis of covalently or charge transfer functionalized and exfoliated two-dimensional layered materials comprising:providing a two-dimensional (2D) layered material;providing an inert solvent comprising chemical species that do not participate in any reactions during the synthesis;{'sub': 3', '1', '2', '3', '1', '2', '3, 'providing a primary mixture comprising a plurality of components including at least one of the inert solvent and at least one reactive component, the at least one reactive component including at least one of ozone (O) and boron trihalogenide, the boron trihalogenide represented by BXXX, where X, X, and/or Xare selected from the group consisting of fluorine, chlorine, bromine, and iodine;'}setting a temperature and pressure of the primary mixture, wherein the primary mixture is one of liquid and supercritical fluid at the set temperature and pressure;providing a secondary mixture comprising the two-dimensional layered material and the primary mixture, wherein the secondary ...

Способ получения коллоидных квантовых точек селенида цинка в оболочке хитозана

FIELD: physics.SUBSTANCE: invention relates to production of quantum dots used as biological markers. Method of producing colloidal semiconductor quantum dots of zinc selenide in a chitosan shell involves reaction of zinc chloride with selenide ions in the presence of ammonia and a coating agent. Chitosan solution, obtained by mixing 0.5 g of chitosan dry powder and 50 ml of 2 % acetic acid, is added with 8.0 ml of 0.008 M aqueous solution of zinc chloride at room temperature and constant stirring. Then 1.5 ml of 0.1 M aqueous solution of ammonia is added. Then 0.12 ml of 0.25 M solution of sodium selenosulphate is slowly added to the obtained solution by drops under constant vigorous stirring.EFFECT: invention enables to obtain zinc selenide quantum dots coated with chitosan at room temperature without using toxic reagents and complex equipment, to provide better interaction of quantum dots with biological objects.1 cl, 3 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 685 669 C1 (51) МПК C01B 19/04 (2006.01) C01G 9/00 (2006.01) C09K 11/54 (2006.01) C09K 11/88 (2006.01) B01J 13/00 (2006.01) B82B 3/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ B82Y 15/00 (2011.01) B82Y 30/00 (2011.01) A61K 49/18 (2006.01) (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК C01B 19/04 (2019.02); C01G 9/00 (2019.02); C09K 11/54 (2019.02); C09K 11/88 (2019.02); B01J 13/00 (2019.02); B82Y 40/00 (2019.02); B82Y 15/00 (2019.02); B82Y 30/00 (2019.02); A61K 49/18 (2019.02); C01P 2004/64 (2019.02) 01.08.2018 Дата регистрации: 22.04.2019 Приоритет(ы): (22) Дата подачи заявки: 01.08.2018 (56) Список документов, цитированных в отчете о поиске: RU 2601451 C1, 10.11.2016. RU (45) Опубликовано: 22.04.2019 Бюл. № 12 C 1 2 6 8 5 6 6 9 2381304 C1, 10.02.2010. RU 2607405 C2, 10.01.2017. US 9073751 B2, 07.07.2015. US 20180107065 A1, 19.04.2018. CN 106833650 A, 13.06.2017. LEPPERT et al., Structural and Optical Characteristics of ZnSe Nanocrystals Synthesized in the Presence of a Polymer ...

Separation process for laminar materials, such as graphene

A system and a method of continuously separating submicron thickness laminar solid particles from a solid suspension, segregating the suspension into a submicron thickness particle fraction suspension and a residual particle fraction suspension. The method comprises the steps of; providing a continuous centrifuge apparatus, such as a disc stack centrifuge (100); providing a solid suspension of submicron thickness laminar solid particles in a liquid continuous phase such as water and separating the solid suspension in the apparatus. Preferably the suspension is introduced to the rotating disc stack centrifuge (100) via an inlet pipe (120), and is accelerated in a distributor (130). Liquid may be discharged through an exit (150) and particles separated from the suspension may collect in a periphery (160) where they may be discharged by means of a gap (180) between a top (190) and bottom (200) of the rotating disc stack centrifuge. The system and method may allow for separation of boron nitride ...

Photoconductive material for use in an electro-photographic process

An alloy comprising a major proportion of Se and a minor proportion of S is made by mixing the powdered elements together, melting and fusing the mixture. The preferred alloy contains 5-25 wt. % S, an alloy of 25% S and 75% Se being disclosed.

COMPOUND SEMICONDUCTOR WITH HETERO METAL AND METHOD OF FABRICATING SAME

Disclosed in the present invention is a novel compound semiconductor usable in an application, such as a thermoelectric material, and a method of fabricating the same. According to the present invention, a compound semiconductor is a compound semiconductor in which a hetero metal is added thereto and the hetero metal is represented by chemical formula 1. In chemical formula 1, Me is at least one selected from the group comprising Zn, Mn, Ti, Mo, and Zr; x is between 2.5 and 3.0; a is more than or equal to 3.0 and is less than 3.5; y is more than 0; and z is less than 0. COPYRIGHT KIPO 2016 (S10) Formation of a mixture containing Bi, Te, Se (S20) Heat treatment (S30) Addition of In and Me (S40) Pressure sintering ...

h-BN을 보호층으로 사용하는 봉지 재료 및 이의 제조방법

... 본 발명은 h-BN이 적층된 봉지 재료 및 이의 제조방법에 관한 것으로서, 보다 상세하게는 물 또는 공기에 민감한 물질; 및 상기 물질 상에 육방정 질화붕소(hexagonal boron nitride; 이하 'h-BN')로 이루어진 층을 3층 이상 전사한 보호층을 포함하는, h-BN이 적층된 봉지 재료를 제공한다. 본 발명에 따른 h-BN이 전사된 물 또는 공기에 민감한 물질 중에서, 특히 3층 이상의 h-BN이 전사된 단일층의 전이금속 디칼코게나이드(Transition metal dichalcogenides; 이하 'TMDs') 상에 레이저를 조사하더라도 효율적으로 TMDs를 보호할 수 있다. 또한 3층 이상의 h-BN이 전사된 TMDs 상에 물방울을 떨어뜨린 후 레이저를 조사하더라도 TMDs 결정립계 영역에서 광분해가 일어나지 않는 바, 거친 조건 하에서도 안정성을 유지할 수 있어 다양한 반도체 및 광전자 소자에 응용될 수 있는 장점이 있다.

Semiconductor nanoparticle manufacturing device, and method of manufacturing semiconductor nanoparticle

ULTRATHIN NANOWIRE-BASED AND NANOSCALE HETEROSTRUCTURE-BASED THERMOELECTRIC CONVERSION STRUCTURES AND METHOD OF MAKING SAME

An ultrathin tellurium nanowire structure is disclosed, including a rod-like crystalline structure of tellurium, wherein the crystalline structure is defined by diameters of between 5 - 6 nm. In addition, an ultrathin tellurium-based nanowire structure is disclosed including a rod-like crystalline structure of one of lead telluride and bismuth telluride, wherein an ultrathin tellurium nanowire structure is used as a precursor to generate the rod-like crystalline structure. Furthermore, a nanoscale heterostructure tellurium-based nanowire structure is disclosed including a dumbbell-like crystalline heterostructure having a center rod-like portion and one octahedral structure connected to each end of each of the center rod- like portions, wherein the center rod-like portion is a tellurium-based nanowire structure and the octahedral structures are one of lead telluride, cadmium telluride, and bismuth telluride.

MATERIALS AND METHODS FOR CORROSION INHIBITION OF ATOMICALLY THIN MATERIALS

Methods and materials for providing corrosion protection for atomically thin materials are described. In some embodiments, an atomically thin material may have a coating that includes one or more alkyl amine species. The coating may cover at least a portion of the atomically thin material, and the coating may form a corrosion protection layer. Depending on the particular materials, a coating may be ionically bonded to at least a portion of an atomically thin material. In some embodiments, a method of forming a corrosion protection layer on at least a portion of an atomically thin material may involve exposing at least a portion of an atomically thin material that corrodes under normal atmospheric conditions to an alkyl amine.

Verfahren zur Herstellung aktiven Schwefel enthaltender Produkte

Quantum dot, wavelength conversion member using quantum dot, illumination member, backlight device, display device, and method for manufacturing quantum dot

The purpose of the present invention is to provide a quantum dot that has a small full width at half maximum and does not include cadmium. This quantum dot (5) is characterized by not including cadmium and by having a full width at half maximum of 30 nm or less. The quantum dot is preferably a nanocrystal containing zinc and tellurium, or containing zinc, tellurium, and sulfur, or containing zinc, tellurium, selenium, and sulfur. The quantum dot also preferably has a core-shell structure in which the nanocrystal is the core thereof and the surface of the core is covered by a shell.

IRON CHALCOGENIDE NANOCOMPOSITE AND THE METHOD FOR PREPARATION THEROF

METHOD AND DEVICE FOR PRODUCING METAL CHALCOGENIDES

Compositions comprising chalcogenides and related methods

This invention relates to compositions comprising chalcogenides in a reduced form, related methods of producing compositions comprising chalcogenides in a reduced form, devices for delivering a reduced form of a compound to a subject, as well as to methods for treating or preventing injuries or disease using a composition comprising a chalcogenide in a reduced form.

METHODS OF MAKING COOPER SELENIUM PRECURSOR COMPOSITIONS WITH A TARGETED COPPER SELENIDE CONTENT AND PRECURSOR COMPOSITIONS AND THIN FILMS RESULTING THEREFROM

Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

Method for preparing lead selenide nanocrystals

The invention discloses a method for preparing lead selenide nanocrystals. The method comprises the following steps of: putting selenium powder in a container; removing the air from the container and filling the container with inert gas; adding alkylamine which has a long chain with a boiling point of over 180 DEG C into the container; fully stirring and heating the selenium powder and the ammonia to perform full reaction so as to form ligand; adding lead chloride into the alkylamine which has the long chain with the boiling point of over 180 DEG C, fully stirring the mixture, vacuuming the container and then heating the mixture of the lead chloride and ammonia to fully dissolve the lead chloride in the ammonia; and injecting the mixture of selenium powder into the mixture of lead chloride to perform reaction so as to obtain the lead selenide nanocrystalline particles.

Inorganic electronic material with room temperature flexibility and preparation method thereof

Contact methods for formation of lewis gas/liquid systems and recovery of lewis gas therefrom

The invention relates to an improvement in apparatus and process for the formation of a complex of Lewis acidic or Lewis basic gases in a reactive liquid of opposite character and for the breaking (fragmentation) of said complex associated with the recovery of the Lewis gas therefrom. The improvement resides in forming finely divided droplets of reactive liquid and controlling the temperature, pressure and concentration of said Lewis gas of opposite character to provide for (a) the formation of said complex between said gas and reactive liquid or (b) the breaking of said complex and the recovery of the atomized droplets of reactive liquid.

Improvements with the manufactoring processes and the modes of application of selenium sulphide

PROCEEDED OF REDUCTION OF COMPOSE HAVING a REDUCIBLE ELECTRONEGATIVE FUNCTIONALITY, BY the ALKALINE METAL HYDRIDE

METHODS FOR FORMING A LEWIS GAS/LIQUID SYSTEM AND RECOLLECTING THE LEWIS GAS THEREFROM CAPABLE OF SAFELY HANDLING TOXIC AND VOLATILE LEWIS COMPOUNDS

PURPOSE: A method for forming a Lewis gas/liquid system and a method for recollecting the Lewis gas therefrom are provided to safely store and convey a toxic Lewis compound by generating a complex of the Lewis compound in an ionized liquid. CONSTITUTION: A reaction liquid(202) is contained in a container(200), which provides an upper space(204). A Lewis gas is introduced from the container by using a line(206). A spinning disk(208) is used to generate a differentiated volume of the reaction liquid. The spinning disk is driven by using a motor(210) is coupled with the spinning disk through a driving shaft(216). The driving shaft penetrates a rotation sealing unit(218). The liquid is introduced to the spinning disk through a partially-submerged liquid transfer line(212) and converted to the differentiated volume(214). A complex is formed by using the Lewis gas and the reaction gas. © KIPO 2008 ...

Control of crystallographic texture and grain size in bulk thermoelectric materials through constrained deformation

New methods for improving thermoelectric properties of bismuth telluride based materials are described. Constrained deformation, such as by canned/sandwich, or encapsulated, rolling and plane strain channel die compression, particularly at temperatures above 80% of the melting point of the material on an absolute temperature scale, changes the crystallographic texture and grain size to desirably increase the values of both the thermoelectric power factor and the thermoelectric figure of merit ZT for the material.

Preparation of chalcogenide alloys

Disclosed is a process for the preparation of chalcogenide alloys in high purity which comprises providing a solution mixture of oxides of the desired chalcogens, and subsequently subjecting this mixture to a simultaneous coreduction reaction.

COMPOSITIONS COMPRISING CHALCOGENIDES AND RELATED METHODS

This invention relates to compositions comprising chalcogenides in a reduced form, related methods of producing compositions comprising chalcogenides in a reduced form, devices for delivering a reduced form of a compound to a subject, as well as to methods for treating or preventing injuries or disease using a composition comprising a chalcogenide in a reduced form.

Improvements with the manufactoring processes and the modes of application of selenium sulphide

BAG MATERIAL USING H-BN AS PROTECTING LAYER AND MANUFACTURING METHOD THEREOF

The present invention relates to a bag material with stacked h-BN and a manufacturing method thereof. More specifically, the bag material with stacked h-BN includes: a substance sensitive to water or air; and a protecting layer formed by transferring at least three hexagonal boron nitride (h-BN) layers onto the substance. Even if a laser beam is emitted to transition metal dichalcogenides (TMDs) of a single layer transferred with at least three h-BN layers on the substance sensitive to water of the present invention, TMDs are able to be efficiently protected. Moreover, even if emission of a laser beam is performed after waterdrops are put onto the TMDs including at least three h-BN layers, photolysis does not occur in a TMDs crystal grain area, and thus, the material is able to maintain stability even in a tough condition, so the material is able to be applied to various semiconductors and photoelectronic elements. COPYRIGHT KIPO 2018 ...

Semiconductor nanoparticle complex composition, dilution composition, semiconductor nanoparticle complex cured membrane, semiconductor nanoparticle complex patterning membrane, display element, and semiconductor nanoparticle complex dispersion liquid

Provided is a semiconductor nanoparticle complex composition having high fluorescence quantum efficiency, in which composition a semiconductor nanoparticle complex is dispersed at a high concentration. A semiconductor nanoparticle complex composition according to an embodiment comprises a semiconductor nanoparticle complex dispersed in a dispersion medium. The semiconductor nanoparticle complex has a semiconductor nanoparticle and a ligand coordinated on the surface of the semiconductor nanoparticle; the ligand includes an organic group; and the dispersion medium is a monomer or a prepolymer. The semiconductor nanoparticle complex composition further includes a crosslinking agent. The mass fraction of the semiconductor nanoparticles of the semiconductor nanoparticle complex composition is 30 mass% or more.

BROAD-EMISSION NANOCRYSTALS AND METHODS OF MAKING AND USING SAME

In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to an inorganic nanoparticle capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the second electromagnetic region comprises an at least about 50 nm wide band of wavelengths and to methods for the preparation thereof. Li further aspects, the invention relates to a frequency converter, a light emitting diode device, a modified fluorescent light source, an electroluminescent device, and an energy cascade system comprising the nanoparticle of the invention. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Processes for preparing chalcogenide alloys

A process for the preparation of chalcogenide alloys which comprises crystallizing a chalcogenide alloy, grinding and pelletizing the crystallized product, and evaporating the alloy on, for example, a supporting substrate to form a photoreceptor.

HOMOGENEOUS ANAEROBICALLY STABLE QUANTUM DOT CONCENTRATES

The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one reactive diluent, at least one anaerobic stabilizer, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films. 1. A nanostructure composition , comprising:(a) at least one population of nanostructures;(b) at least one reactive diluent; and(c) at least one anaerobic stabilizer.23-. (canceled)4. The nanostructure composition of claim 1 , wherein the at least one population of nanostructures contains a core selected from the group consisting of InP claim 1 , InZnP claim 1 , InGaP claim 1 , CdSe claim 1 , CdS claim 1 , CdSSe claim 1 , CdZnSe claim 1 , CdZnS claim 1 , ZnSe claim 1 , ZnSSe claim 1 , InAs claim 1 , InGaAs claim 1 , and InAsP.59-. (canceled)10. The nanostructure composition of claim 1 , wherein the at least one reactive diluent is isobornyl acrylate.1113-. (canceled)14. The nanostructure composition of claim 1 , wherein the at least one anaerobic stabilizer is a nitroxide-containing compound or a nitroso-containing compound.16. (canceled)17. The nanostructure composition of claim 1 , wherein the at least one anaerobic stabilizer is 4-hydroxy-2 claim 1 ,2 claim 1 ,6 claim 1 ,6-tetramethyl-1-piperidinyloxy (4-hydroxy-TEMPO).18. (canceled)19. The nanostructure composition of claim 1 , wherein the at least one reactive diluent is isobornyl acrylate and the at least one anaerobic stabilizer is 4-hydroxy-TEMPO.20. The nanostructure composition of claim 19 , wherein the nanostructure composition comprises as a weight percentage about 200 ppm 4-hydroxy-TEMPO in relation to isobornyl acrylate.2122-. (canceled)23. A nanostructure composition claim 19 , comprising:(a) at least one population of nanostructures;(b) at least one reactive diluent;(c) ...

Application of lactam as solvent in nanomaterial preparation

The present invention disclosed use of lactam as a solvent in the preparation of nanomaterials by precipitation method, sol-gel method or high temperature pyrolysis. These methods are able to recycle lactam solvent, which meet requirements of environmental protection.

IRON CHALCOGENIDE NANOCOMPOSITE AND METHOD FOR PREPARING SAME

The present invention relates to an iron chalcogenide nanocomposite with photoluminescent properties. The present invention also relates to a method for preparing the iron chalcogenide nanocomposite. The method includes (a) dissolving a Fe precursor in an organic solvent to form a Fe solution, (b) dissolving a chalcogen powder or a chalcogen precursor in an organic solvent to form a chalcogen solution, (c) dropwise injecting the Fe solution into the chalcogen solution to prepare a mixture solution in which an iron chalcogenide is formed, and (d) purifying the iron chalcogenide from the mixture solution. 1. An iron chalcogenide nanocomposite with photoluminescent properties.2. The iron chalcogenide nanocomposite according to claim 1 , wherein the nanocomposite has a NiAs-type phase crystal structure.3. The iron chalcogenide nanocomposite according to claim 1 , wherein the chalcogen is S claim 1 , Se or Te.4. The iron chalcogenide nanocomposite according to claim 1 , wherein the iron chalcogenide is FeSe or FeSe.5. A method for preparing an iron chalcogenide nanocomposite claim 1 , comprising(a) dissolving a Fe precursor in an organic solvent to form a Fe solution,(b) dissolving a chalcogen powder or a chalcogen precursor in an organic solvent to form a chalcogen solution,(c) dropwise injecting the Fe solution into the chalcogen solution to prepare a mixture solution in which an iron chalcogenide is formed, and(d) purifying the iron chalcogenide from the mixture solution.6. The method according to claim 5 , wherein claim 5 , in step (a) or (b) claim 5 , the organic solvent is heated to 100 to 140° C.7. The method according to claim 5 , wherein the organic solvent used in step (a) or (b) is selected from the group consisting of ether-based compounds (COC claim 5 , C: hydrocarbon claim 5 , 4≦n≦30) claim 5 , hydrocarbons (CH claim 5 , 7≦n≦30) claim 5 , unsaturated hydrocarbons (CH claim 5 , 7≦n≦30) claim 5 , and organic acids (CCOOH claim 5 , C: hydrocarbon claim 5 , 5≦n ...

Multi-element anionic reagent complexes

Reagent complexes have two or more elements, formally in oxidation state zero, complexed with a hydride molecule. Complexation with the hydride molecule may be evidenced by shifts to lower binding energies, of one or more electrons in each of the two or more elements, as observed by x-ray photoelectron spectroscopy. The reagents can be useful for the synthesis of multi-element nanoparticles. Preparation of the reagents can be achieved by ball-milling a mixture that includes powders of two or more elements and a hydride molecule.

Separation process for laminar materials, such as graphene

A system and a method of continuously separating submicron laminar solid particles from a solid suspension, segregating the suspension into a submicron particle fraction suspension and a residual particle fraction suspension. The method comprises the steps of; providing a continuous centrifuge apparatus, such as a disc stack centrifuge (100); providing a suspension of submicron laminar solid particles in a solid suspension of the submicron solid particles in a liquid continuous phase such as water and separating the solid suspension in the apparatus. Preferably the suspension is introduced to the rotating disc stack centrifuge (100) via an inlet pipe (120), and is accelerated in a distributor (130). Liquid may be discharged through an exit (150) and particles separated from the suspension may collect in a periphery (160) where they may be discharged by means of a gap (180) between a top (190) and bottom (200) of the rotating disc stack centrifuge. The system and method may allow for separation ...

Multiple particles and method for preparation thereof

Preparation method of tellurium dioxide

층상 물질 함유액 및 그 제조 방법

... 특정의 카티온을 포함하는 이온 액체에, 2종류 이상의 원소를 구성 원소로서 포함하는 층상 물질의 적층물을 함유시켜, 그 적층물을 함유하는 이온 액체에, 음파 및 전파 중의 적어도 한쪽을 조사한다.

Heat treatment method and the product prepared therefrom

The present invention provides a heat treatment method, particularly a heat treatment method in which a protective layer is directly applied onto a precursor to ensure that the precursor on each portion of the substrate is treated based on substantially the same conditions so that the quality of the prepared product layer is improved. The method of the present invention comprises: (1) providing a substrate; (2) applying a precursor onto the surface of the substrate; (3) covering the precursor-applied substrate with a protective layer to bring the substrate and the protective layer into direct contact; (4) placing the substrate obtained from step (3) into a heat chamber for heat treatment; and (5) removing the protective layer. A product prepared by said heat treatment method is also provided.

Process for preparation of chalcogens and chalcogenide alloys of controlled average crystallite size

Chalcogens and chalcogenide alloys of controlled crystal size are prepared by subjecting the esters to a reduction reaction. The esters may be prepared by treating the corresponding oxides of the desired elements with an alcohol or glycol and then in one embodiment, converted into the desired chalcogen alloys by subjecting a solution mixture of the resulting esters to a co-reduction reaction at high temperatures. The resulting chalcogens and chalcogenide alloys are useful for the preparation of xerographic photoconductive compositions.

Separation process for laminar materials, such as graphene

Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

Abstract Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration 10 of heating controls the formation of a targeted species of copper selenide.

Method and apparatus for supplying hydrogen selenide mixed gas for solar cells

METHODS OF MAKING COPPER SELENIUM PRECURSOR COMPOSITIONS WITH A TARGETED COPPER SELENIDE CONTENT AND PRECURSOR COMPOSITIONS AND THIN FILMS RESULTING THEREFROM

AbstractPrecursor compositions containing copper and selenium suitable fordeposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and durationof heating controls the formation of a targeted species of copper selenide.

Quantum dot, and method for producing same

The purpose of the present invention is to provide a quantum dot which emits blue fluorescence having a narrow fluorescence half-value width and a high fluorescence quantum yield. A quantum dot (5) according to the present invention contains at least Zn and Se, does not contain Cd, and is characterized by having a particle size of 5-20 nm. In addition, the quantum dot (5) according to the present invention contains at least Zn and Se, does not contain Cd, and is characterized in that the fluorescence quantum yield is at least 5% and the fluorescence half-value width is 25 nm or less. In the present invention, the fluorescence lifetime can be 50 ns or less.

PHOTOCONDUCTIVE MATERIAL FOR USE IN AN ELECTRO- PHOTOGRAPHIC PROCESS

PROCESSES FOR PRODUCING HYDRIDES

... 1508749 Gaseous hydrides DEFENCE SECRETARY OF STATE FOR 4 March 1977 [16 March 1976] 10600/76 Heading C1A Gaseous hydrides of an element are produced by reacting H 2 with the molten element (e.g. Se or Te) in vessel 1, passing the resulting mixture of hydride and hydrogen into cooled vessel 8 where hydride is frozen out as 17; disconnecting 8 from I, e.g. by closing valve 7 and connecting 8 to another cooled vessel 14, allowing 8 to warm up to provide gaseous hydride, which passes into 14 and solidifies, so enabling 14 to be sealed to provide a store of hydride releasable as a gas under pressure.

Quantum dot, method for manufacturing same, wavelength conversion member using quantum dot, illumination member, backlight device, and display device

The purpose of the present invention is to provide a Cd-free quantum dot that has a narrow full width at half maximum and emits blue fluorescence. This quantum dot (1) is characterized by not containing cadmium and by having a full width at half maximum of no more than 25 nm. In the present invention, the quantum dot is preferably a nanocrystal either containing zinc and selenium or containing zinc, selenium, and sulfur. The quantum dot also preferably has a core-shell structure in which the nanocrystal serves as a core (1a) and the surface of the core is covered by a shell (1b).

그래핀 복합 소재 분말의 제조 방법

... 본 발명은 열전소재와 그래핀 분말 혼합체를 유도용융방식으로 가열하여 상기 열전소재 용융물 내에 그래핀이 분산된 혼합용융물을 얻는 단계; 및 상기 혼합용융물을 원통형 종축을 회전축으로 회전하는 원통형 휠(wheel)의 외면에 방사하여 급냉 응고시키는 단계를 포함하는, 그래핀 복합 소재 분말의 제조 방법을 제공한다.

Quantum dot and method for producing same

The purpose of the present invention is to provide: a quantum dot which absorbs near infrared light having wavelengths of 1300 nm or more and which is represented by the formula Ag2E (E is at least one of Te, Se and S); and a method for producing a quantum dot, the method enabling mass production and being highly safe. This quantum dot is characterized by: being a nanocrystal represented by the formula Ag2E (E is at least one of tellurium, selenium and sulfur), which contains silver and a chalcogen; and the absorption wavelength of the quantum dot falling within the near infrared region of 1300-1500 nm. This method for producing a quantum dot is characterized by having a step for obtaining a CuE intermediate (E is at least one of tellurium, selenium and sulfur) prepared from a silver raw material and a chalcogen raw material; and a step for subjecting the CuE intermediate to a cation exchange reaction using the Ag raw material so as to synthesize a quantum dot represented by Ag2E (E is ...

2H to 1T phase based transition metal dichalcogenide sensor for optical and electronic detection of strong electron donor chemical vapors

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

Seperation process for laminar materials, such as graphene

Quantum dot solar cells and methods for manufacturing such solar cells

METHOD OF FORMING PHASE CHANGE MATERIAL LAYER USING GE(II) SOURCE, AND METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE

In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NRRR, where R, Rand Rare each independently at least one selected from the group consisting of H, CH, CH, CH, CH, Si(CH), NH, NH(CH), N(CH), NH(CH) and N(CH). 1. A method of forming a phase change material layer , the method comprising:supplying a reaction gas including the composition of Formula 1 into a reaction chamber; andsupplying at least a first source which includes Ge(II) into the reaction chamber; {'br': None, 'sub': 1', '2', '3, 'NRRR\u2003\u2003Formula 1'}, 'wherein a start of supplying the reaction gas into the reaction chamber occurs after supplying of the first source into the reaction chamber is stopped;'}{'sub': 1', '2', '3', '3', '2', '5', '3', '7', '4', '9', '3', '3', '2', '3', '3', '2', '2', '5', '2', '5', '2, 'wherein R, Rand Rare each independently at least one selected from the group consisting of H, CH, CH, CH, CH, Si(CH), NH, NH(CH), N(CH), NH(CH) and N(CH).'}2. The method according to claim 1 , further comprising: supplying a second source wherein the reaction gas is not supplied to the reaction chamber during supplying the second source into the reaction chamber.3. The method according to claim 2 , wherein supplying of the first source and supplying of the second source are at least partially overlapped.4. The method according to claim 2 , wherein supplying of the second source occurs after supplying of the first source is stopped and before supplying of the reaction gas starts.5. The method according to claim 2 , wherein supplying the reaction gas occurs after supplying of the first source is stopped and before supplying the second source starts.6. The method according to claim 1 , wherein the first source ...

BROAD-EMISSION NANOCRYSTALS AND METHODS OF MAKING AND USING SAME

In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to an inorganic nanoparticle capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the second electromagnetic region comprises an at least about 50 nm wide band of wavelengths and to methods for the preparation thereof. In further aspects, the invention relates to a frequency converter, a light emitting diode device, a modified fluorescent light source, an electroluminescent device, and an energy cascade system comprising the nanoparticle of the invention. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention. 1. A method of preparing an inorganic nanoparticle comprising the steps of:{'sub': 8', '20, 'a) heating a reaction mixture comprising a Cto Calkyl- or arylphosphonic acid and a source of cadmium or zinc to a temperature of greater than about 300° C.;'}{'sub': 2', '10, 'b) adding to the reaction mixture an injection mixture comprising a Cto Ctrialkyl- or triarylphosphine and a source of selenium, sulfur, or tellurium; and'}c) decreasing the temperature of the reaction mixture to less than about 300° C.2. The method of claim 1 , wherein the reaction mixture further comprises at least one of a Cto Ctrialkyl- or triarylphosphine oxide claim 1 , or a Cto Calkylamine or arylamine claim 1 , or a mixture thereof.3. The method of claim 1 , wherein the injection mixture further comprises a Cto Chydrocarbon.4. The method of claim 1 , further comprising the step of adding a solvent to the reaction mixture so as to decrease the temperature of the reaction mixture to less than about 250° C.5. The method of claim 1 , wherein the source of cadmium or zinc comprises cadmium oxide.6. The method of claim 1 , ...

GAMMA RADIATION SOURCE

A gamma radiation source comprises Selenium wherein the Selenium is provided in the form of compounds, alloys or mixtures with one or more nonmetals which upon irradiation do not produce products capable of sustained emission of radiation which would unacceptably interfere with the gamma radiation of Selenium. A further gamma radiation source comprises Selenium wherein the Selenium is provided in the form of compounds, alloys or mixtures with one or more metals or nonmetals, the neutron irradiation of which does produce products capable of sustained emission of radiation which would acceptably complement the gamma radiation of Selenium. Further, the gamma radiation source may have components that are separately irradiated before being combined and the components may be of natural isotopic composition or of isotopically modified composition so that the subsequent radiation peaks may also be adjusted in relative frequency. 1. A gamma radiation source comprising: Selenium or a precursor thereof , wherein the Selenium is provided in the form of one or more thermally stable compounds or mixtures , and with one or more nonmetals the neutron irradiation of which does not produce products capable of sustained emission of radiation which would unacceptably interfere with the gamma radiation of Selenium.2. A gamma radiation source as defined in claim 1 , wherein the one or more nonmetals may comprise a natural isotopic composition claim 1 , an enriched isotopic composition claim 1 , or a depleted isotopic composition.3. A gamma radiation source as defined in claim 2 , wherein the gamma radiation peaks of the composition may be adjusted in relative frequency.4. The gamma radiation source as defined in claim 1 , wherein said one or more nonmetals comprises Germanium or Silicon.5. The gamma radiation source as defined in claim 3 , wherein said one or more nonmetals comprises Ge or Si.6. A gamma radiation source comprising: Selenium or a precursor thereof claim 3 , wherein the ...

EXFOLIATION OF THERMOELECTRIC MATERIALS AND TRANSITION METAL DICHALCOGENIDES USING IONIC LIQUIDS

Disclosed are methods of exfoliating a thermoelectric material, such as bismuth telluride or antimony telluride, using one or more ionic liquids. Also disclosed is the exfoliated thermoelectric material provided by the disclosed methods. Further disclosed are compositions comprising the exfoliated thermoelectric material and methods of making and using the compositions. Additionally disclosed are exfoliated transition metal dichalcogenide compositions, methods of making and using such compositions. 1. A method for making exfoliated two-dimensional sheets of a thermoelectric material or a transition metal dichalcogenide , the method comprising:homogenizing a mixture comprising the thermoelectric material or the transition metal dichalcogenide and at least one ionic liquid to form a homogenous suspension of the two dimensional sheets of the thermoelectric material or the transition metal dichalcogenide in the ionic liquid.2. The method of claim 1 , further comprising extracting the exfoliated two dimensional sheets of the thermoelectric material or the transition metal dichalcogenide from the mixture.3. The method of claim 1 , wherein substantially homogenizing the mixture comprises imparting energy to the mixture.4. The method of claim 1 , wherein substantially homogenizing the mixture comprises sonicating the mixture for a period of time sufficient to exfoliate the thermoelectric material or the transition metal dichalcogenide to form the two dimensional sheets of the thermoelectric material or the transition metal dichalcogenide and substantially homogenize the mixture.5. The method of claim 1 , wherein the two dimensional sheets of the thermoelectric material or the transition metal dichalcogenide are two-dimensional quintuple sheets or a few layer stacks of quintuple sheets.6. The method of claim 1 , wherein the at least one ionic liquid comprises an optionally substituted cation that comprises a stoichiometric or non-stoichiometric mixture of heterocyclic claim ...

A Scalable Process for Producing Exfoliated Defect-Free, Non-Oxidised 2-Dimensional Materials in Large Quantities

A process for exfoliating untreated 3-dimensional material to produce a 2-dimensional material, said process comprising the steps of mixing the untreated 3-dimensional material in a liquid to provide a mixture; applying shear force to said mixture to exfoliate the 3-dimensional material and produce dispersed exfoliated 2-dimensional material in solution; and removing the shear force applied to said mixture, such that the dispersed exfoliated 2-dimensional material remains free and unaggregated in solution. 1. A process for exfoliating an untreated 3-dimensional layered material to produce a 2-dimensional material , said process comprising the steps of:mixing the untreated 3-dimensional layered material in a liquid to provide a mixture;applying shear force to said mixture to exfoliate the 3-dimensional layered material and produce a dispersed and exfoliated 2-dimensional material in solution; andremoving the shear force applied to said mixture, such that the dispersed exfoliated 2-dimensional material remains free and unaggregated in solution.2. A process according to claim 1 , wherein flakes of 2-dimensional material and unexfoliated 3-dimensional layered material are removed from the solution by low-speed centrifugation claim 1 , gravity settling claim 1 , filtration or flow separation.3. A process according to where the shear force generates a shear rate greater than 1000 s-1.4. A process according to any one of claim 1 , wherein the 2-dimensional material is substantially non-oxidised.5. A process according to claim 1 , further comprising the step of allowing the formation of a thin film layer from said mixture.6. A process according to claim 1 , further comprising the step of allowing the formation of a thin film layer from said mixture and wherein the step of forming the thin film layer is formed by vacuum filtration or accelerated evaporation.7. A process according to claim 1 , wherein the layered material is selected from any 3-dimensional layered compound ...

CATHODES AND ELECTROLYTES FOR RECHARGEABLE MAGNESIUM BATTERIES AND METHODS OF MANUFACTURE

The invention relates to Chevrel-phase materials and methods of preparing these materials utilizing a precursor approach. The Chevrel-phase materials are useful in assembling electrodes, e.g., cathodes, for use in electrochemical cells, such as rechargeable batteries. The Chevrel-phase materials have a general formula of MoZand the precursors have a general formula of MMoZ. The cathode containing the Chevrel-phase material in accordance with the invention can be combined with a magnesium-containing anode and an electrolyte. 1. An electrochemical cell , comprising:an alkali-metal-containing anode; {'sub': 6', '8', 'x', '6', '8, 'a Chevrel-phase material of a formula MoZderived from a precursor material of a formula MMoZ, wherein M is a metallic element, x is a number from 1 to 4 and Z is a chalcogen with or without a presence of oxygen; and'}, 'a cathode, comprisingan electrolyte.2. The electrochemical cell of claim 1 , wherein the alkali-metal-containing anode comprises magnesium.3. The electrochemical cell of claim 1 , wherein the metallic element is selected from the group consisting of Li claim 1 , Na claim 1 , Mg claim 1 , Ca claim 1 , Sc claim 1 , Cr claim 1 , Mn claim 1 , Fe Co claim 1 , Ni claim 1 , Cu claim 1 , Zn claim 1 , Sr claim 1 , Y claim 1 , Pd claim 1 , Ag claim 1 , Cd claim 1 , In claim 1 , Sn claim 1 , Ba claim 1 , La claim 1 , Pb claim 1 , Ce claim 1 , Pr claim 1 , Nd claim 1 , Sm claim 1 , Eu claim 1 , Gd claim 1 , Tb claim 1 , Dy claim 1 , Ho claim 1 , Er claim 1 , Tm claim 1 , Yb claim 1 , Lu and mixtures thereof.4. The electrochemical cell of claim 1 , wherein the chalcogen Z is selected from chemical elements in Periodic Table Group 16.5. The electrochemical cell of claim 1 , wherein Z is selected from the group consisting of sulfur claim 1 , selenium claim 1 , tellurium and mixtures thereof.4. (canceled)5. (canceled)6. The electrochemical cell of claim 1 , wherein the Chevrel-phase material is of a formula MoSwhich is derived from a ...

CORE-SHELL TYPE QUANTUM DOT, PREPARATION METHOD AND USE THEREOF

The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties. 1. A core-shell type quantum dot comprising a quantum dot core , a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core , and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer.2. The core-shell type quantum dot according to claim 1 , wherein the filler is fixed in the mesopores by chemical bonding.3. The core-shell type quantum dot according to claim 1 , wherein the core-shell type quantum dot further comprises a light-transmitting metal oxide passivation layer on a surface of the light-transmitting inorganic mesoporous material layer away from the quantum dot core.4. The core-shell type quantum dot according to claim 1 , wherein the filler is a fluorescent-responsive substance.5. The core-shell type quantum dot according to claim 4 , wherein the fluorescent responsive substance is one or more substances selected from the group consisting of: a) an upconversion nanoparticle; b) a fluorescent dye; and c) a self-luminous material used in an OLED device not used for a) and b).6. The core-shell type quantum dot according to claim 5 , wherein the ...

Compound and Thermoelectric Conversion Material

A compound containing Sn, Te and Mn, and further containing either one or both of Sb and Bi.

Humic Acid-Based Supercapacitors

A supercapacitor electrode comprising a mixture of graphene sheets and humic acid, wherein humic acid occupies 0.1% to 99% by weight of the mixture and the graphene sheets are selected from a pristine graphene material having essentially zero % of non-carbon elements, or a non-pristine graphene material having 0.001% to 5% by weight of non-carbon elements wherein said non-pristine graphene is selected from graphene oxide, reduced graphene oxide, graphene fluoride, graphene chloride, graphene bromide, graphene iodide, hydrogenated graphene, nitrogenated graphene, chemically functionalized graphene, or a combination thereof; and wherein said mixture has a specific surface area greater than 500 m/g. 1. A supercapacitor electrode comprising a mixture of graphene sheets and humic acid , wherein said humic acid occupies 0.1% to 99% by weight of the mixture and said graphene sheets are selected from a pristine graphene material having essentially zero % of non-carbon elements , or a non-pristine graphene material having 0.001% to 5% by weight of non-carbon elements wherein said non-pristine graphene is selected from the group consisting of graphene oxide , reduced graphene oxide , graphene fluoride , graphene chloride , graphene bromide , graphene iodide , hydrogenated graphene , nitrogenated graphene , chemically functionalized graphene , and a combination thereof; and wherein said mixture has a specific surface area greater than 500 m/g.2. A supercapacitor electrode comprising humic acid molecules having an oxygen content of 0. 01% to 42% by weight as an electrode active material , wherein said electrode has a specific surface area greater than 500 m/g.3. The supercapacitor electrode of claim 2 , wherein said oxygen content is from 0.01% to 5% by weight.4. The supercapacitor electrode of claim 2 , wherein said electrode comprises multiple particulates that are porous and each particulate is composed of multiple humic acid molecules packed into a spherical or ellipsoidal ...

PROCESS FOR THE CONTINUOUS PRODUCTION OF SUB-MICRON TWO-DIMENSIONAL MATERIALS SUCH AS GRAPHENE

A system and a method of continuously separating submicron thickness laminar solid particles from a solid suspension, segregating the suspension into a submicron thickness particle fraction suspension and a residual particle fraction suspension, the method comprising the steps of; providing a continuous centrifuge apparatus; providing a suspension of submicron thickness laminar solid particles in a solid suspension; wherein the solid suspension comprises the submicron thickness solid particles in a liquid continuous phase; separating the solid suspension in the apparatus. 1. A method of continuously separating a solid suspension containing submicron thickness laminar solid particles into a submicron thickness particle fraction suspension and a residual particle fraction suspension , the method comprising the steps of:providing a continuous centrifuge apparatus;providing a solid suspension of submicron thickness laminar solid particles; 'wherein the solid suspension comprises the submicron thickness laminar solid particles in a liquid continuous phase.', 'separating the solid suspension in the apparatus;'}2. The method of wherein the continuous centrifuge apparatus is a disc stack centrifuge.3. The method of claim 1 , wherein the submicron scale laminar solid particles comprise particles of a material having a crystalline structure comprising atomically thin layers claim 1 , which have been partially delaminated into atomically thin nano-platelets.4. The method of claim 1 , wherein the submicron laminar solid particles comprise particles of partially delaminated graphite claim 1 , hexagonal boron nitride claim 1 , molybdenum disulphide claim 1 , tungsten diselenide or other transition metal dichalcogenides.5. The method of claim 1 , wherein the submicron laminar solid particles comprise particles of partially delaminated graphite or hexagonal boron nitride.6. The method of claim 1 , wherein the submicron laminar solid particles comprise particles of partially ...

2H TO 1T PHASE BASED TRANSITION METAL DICHALCOGENIDE SENSOR FOR OPTICAL AND ELECTRONIC DETECTION OF STRONG ELECTRON DONOR CHEMICAL VAPORS

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors. 1. A method for detecting whether an unknown chemical vapor comprises a strong electron donor , comprising:providing at least one sensor comprising a transition metal chalcogenide thin film comprising at least one region having a 2H phase;exposing the at least one sensor to an unknown chemical vapor;evaluating the transition metal chalcogenide thin film comprising at least one region having a 2H phase to determine whether the phase of the at least one region is 2H or 1T; anddetecting that the unknown chemical vapor comprises a strong electron donor if the phase of the at least one region of the transition metal chalcogenide thin film has changed from 2H to 1T.2. The method of claim 1 , wherein the transition metal chalcogenide thin film is evaluated using Raman spectroscopy claim 1 , photoluminescence spectroscopy claim 1 , or electronic resistance measurement.3. The method of claim 1 , further comprising annealing the at least one region of the transition metal chalcogenide thin film after the phase has changed from 2H to 1T claim 1 , thereby returning the at least one region of the transition metal chalcogenide thin film to the 2H phase.4. The method of claim 3 , wherein the annealing is carried out ...

METHOD FOR PREPARING NANOCRYSTAL WITH CORE-SHELL STRUCTURE

Method for preparing nanocrystals with a core-shell structure is provided. The method includes: providing quantum dot cores; and performing N growth processes of shell layers on a quantum dot core to form a nanocrystal with a core-shell structure. A shell source includes a shell source cation precursor and a shell source anion precursor, and the shell source cation precursor is a metal organic carboxylate. The N growth processes include one or more groups of M growth processes of adjacent shell layers, where N and M are positive integers, N≥2 and N/3≤M≤N−1. Before and/or after performing each group of the M growth processes of adjacent shell layers, one of organic amine and organic carboxylic acid is mixed into a shell-layer-growth-reaction-system after a previous shell layer has formed, to form a mixed system to heat. A subsequent shell layer is grown over the previous shell layer. 1. A method for preparing nanocrystals , the method comprising:providing quantum dot cores; a shell source for performing the N growth of the shell layers includes a shell source cation precursor and a shell source anion precursor, and the shell source cation precursor is a metal organic carboxylate, and', {'b': '1', 'the N growth processes include one or more groups of M growth processes of adjacent shell layers, N is a positive integer greater than or equal to 2, and M is a positive integer and N/3≤M≤N−; and'}], 'performing N growth processes of shell layers on the quantum dot cores, thereby preparing N shell layers on a quantum dot core to form a nanocrystal with a core-shell structure, whereinbefore and/or after performing each group of the M growth processes of adjacent shell layers, mixing one of organic amine and organic carboxylic acid into a shell-layer-growth-reaction-system after a previous shell layer has formed, to form a mixed system, and heating the mixed system, and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'growing a subsequent shell layer over the previous shell ...

HEAT TREATMENT METHOD AND THE PRODUCT PREPARED THEREFROM

The present invention provides a heat treatment method, particularly a heat treatment method in which a protective layer is directly applied onto a precursor to ensure that the precursor on each portion of the substrate is treated based on substantially the same conditions so that the quality of the prepared product layer is improved. The method of the present invention comprises: () providing a substrate; () applying a precursor onto the surface of the substrate; () covering the precursor-applied substrate with a protective layer to bring the substrate and the protective layer into direct contact; () placing the substrate obtained from step () into a heat chamber for heat treatment; and () removing the protective layer. A product prepared by said heat treatment method is also provided. 1. A heat treatment method , comprising the following steps:(1) providing a substrate;(2) applying a precursor onto a surface of the substrate;(3) covering the precursor-applied substrate with a protective layer to bring the substrate and the protective layer into direct contact;(4) placing the substrate obtained from step (3) into a heat chamber for heat treatment; and(5) removing the protective layer.2. The method according to claim 1 , wherein steps (2) to (4) or steps (2) to (5) are optionally repeated.3. The method according to claim 1 , wherein the substrate obtained from step (3) is placed in the heat chamber in a manner such that the protective layer faces the top of the heat chamber.4. The method according to claim 1 , wherein the heat treatment is carried out at a temperature ranging from room temperature to 1200° C.5. The method according to claim 1 , wherein the protective layer is a material consisting of carbon claim 1 , a quartz glass or a ceramic material.6. The method according to claim 1 , wherein the precursor comprises one or more elements selected from the group consisting of Cu claim 1 , In claim 1 , Zn claim 1 , Sn claim 1 , Ga and Cd and at least one element ...

NANOCRYSTAL PREPARATION METHOD, NANOCRYSTALS, AND APPARATUS FOR PREPARING AND STORING DISSOLVED GAS

A nanocrystal preparation method comprises the following steps: dissolving, in a first selected solvent, a first precursor which is in a gaseous state under normal temperature and normal pressure, to form a first precursor solution; dissolving a second precursor in a second selected solvent to form a second precursor solution, wherein the second precursor is a precursor of a metal element of Group I, Group II, Group III or Group IV; and in an inert gas atmosphere, adding the first precursor solution into a reaction vessel which contains the second precursor solution, wherein the first precursor chemically reacts with the second precursor to generate a nanocrystal. The present invention further discloses a nanocrystal prepared by the above method and an apparatus for preparing and storing a gas-dissolved solution. With the preparation method according to the invention, the amount of the first precursor in a gaseous state can be accurately controlled, the reaction is more uniform and more controllable, and the obtained nanocrystal has uniform volume distribution and a higher luminescent quantum yield. 1. A method for preparing nanocrystals , comprising the following steps:dissolving, in a first selected solvent, a first precursor which is in a gaseous state under normal temperature and normal pressure, to form a first precursor solution;dissolving a second precursor in a second selected solvent to form a second precursor solution, wherein the second precursor is a precursor of a metal element of Group I, Group II, Group III, or Group IV; andadding, in an inert gas atmosphere, the first precursor solution into a reaction vessel which contains the second precursor solution, wherein the first precursor chemically reacts with the second precursor to generate a nanocrystal.2. The method according to claim 1 , wherein dissolving the first precursor in the first selected solvent is a physical change.3. The method according to claim 1 , wherein the first precursor solution is ...

METHOD FOR PREPARING SEMICONDUCTOR NANOCRYSTALS

A method for making semiconductor nanocrystals is disclosed, the method comprising adding a secondary phosphine chalcogenide to a solution including a metal source and a liquid medium at a reaction temperature to form a reaction product comprising a semiconductor comprising a metal and a chalcogen, and quenching the reaction mixture to form quantum dots. Methods for overcoating are also disclosed. Semiconductor nanocrystals are also disclosed. 1. A method for making semiconductor nanocrystals , the method comprising:adding a secondary phosphine chalcogenide to a solution including a metal source and a liquid medium at a reaction temperature to form a reaction product comprising a semiconductor comprising a metal and a chalcogen, andquenching the reaction mixture resulting in quantum dots.25-. (canceled)6. A method in accordance with wherein the solution further includes a phosphonate species.7. A method in accordance with wherein the solution further includes a phosphonite species.8. A method in accordance with wherein the solution further includes carboxylate species.9. A method in accordance with wherein the solution further includes phosphonite species.10. (canceled)11. A method in accordance with wherein the reaction temperature is greater than 200° C.12. A method in accordance with wherein the step of quenching includes rapidly cooling the reaction mixture immediately upon completion of addition of the secondary phosphine chalcogenide.13. A method in accordance with wherein the step of quenching includes rapidly cooling the reaction mixture immediately upon completion of addition of the secondary phosphine chalcogenide to stop growth of the semiconductor nanocrystals formed in reaction mixture.14. A method in accordance with wherein the reaction mixture is cooled to a temperature that is about 200° C. or below.15. A method in accordance with wherein the reaction mixture is cooled to a temperature that is about 100° C. or below and further comprising isolating ...

SEMICONDUCTOR NANOCRYSTAL PARTICLE, METHOD FOR PREPARING SAME, AND DEVICE INCLUDING SAME

A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed. 1. A quantum dot comprisinga core comprising a first semiconductor nanocrystal comprising zinc and selenium, and optionally sulfur and/or tellurium, anda shell comprising a second semiconductor nanocrystal comprising zinc and at least one of sulfur or selenium,wherein the quantum dot has an average particle diameter of greater than or equal to about 13 nanometers, an emission peak wavelength in a range of about 440 nanometers to about 470 nanometers, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nanometers,wherein the quantum dot is cadmium-free.2. The quantum dot of claim 1 , wherein the quantum dot has an average particle diameter of about 13 nanometers to about 20 nanometers claim 1 , and an emission peak wavelength in a range of about 445 nanometers to about 460 nanometers.3. The quantum dot of claim 1 , wherein the quantum dot exhibits a quantum efficiency of greater than or equal to about 70%.4. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal comprises zinc and selenium claim 1 , or zinc claim 1 , selenium claim 1 , and tellurium.5. The quantum dot of claim 1 , wherein the second semiconductor nanocrystal comprises zinc and selenium claim 1 , or zinc and sulfur.6. The quantum dot of claim 1 , wherein the ...

NANOPARTICLES PASSIVATED WITH CATIONIC METAL-CHALCOGENIDE COMPOUND

Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle 1. A cationic metal-chalcogenide compound.2. The cationic metal-chalcogenide compound of claim 1 , wherein the cationic metal-chalcogenide compound is selected from the group consisting of ZnS claim 1 , ZnSe claim 1 , ZnTe claim 1 , CuS claim 1 , CuSe claim 1 , CuTe claim 1 , MnS claim 1 , MnSe claim 1 , MnTe claim 1 , FeS claim 1 , FeSe claim 1 , FeTe claim 1 , CoS claim 1 , CoSe claim 1 , CoTe claim 1 , and mixtures thereof.3. A passivated nanoparticle comprising:a core nanoparticle; anda cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle.4. The passivated nanoparticle of claim 3 , wherein the cationic MCC is selected from the group consisting of ZnS claim 3 , ZnSe claim 3 , ZnTe claim 3 , CuS claim 3 , CuSe claim 3 , CuTe claim 3 , MnS claim 3 , MnSe claim 3 , MnTe claim 3 , FeS claim 3 , FeSe claim 3 , FeTe claim 3 , CoS claim 3 , CoSe claim 3 , CoTe claim 3 , and mixtures thereof.5. The passivated nanoparticle of claim 3 , wherein the core nanoparticle is a quantum dot claim 3 , a metal nanocrystal (NC) claim 3 , a magnetic NC claim 3 , an oxide NC claim 3 , a nanowire claim 3 , or a nanoplate.6. The passivated nanoparticle of claim 5 , wherein the quantum dot is selected from the group consisting of CdS claim 5 , CdSe claim 5 , CdTe claim 5 , ZnS claim 5 , ZnSe claim 5 , ZnTe claim 5 , ZnO claim 5 , HgS claim 5 , HgSe claim 5 , HgTe claim 5 , CdSeS claim 5 , CdSeTe claim 5 , CdSTe claim 5 , ZnSeS claim 5 , ZnSeTe claim 5 , ZnSTe claim 5 , HgSeS claim 5 , HgSeTe claim 5 , HgSTe claim 5 , CdZnS claim 5 , CdZnSe claim 5 , CdZnTe claim 5 , CdHgS claim 5 , CdHgSe claim 5 , CdHgTe claim 5 , HgZnS claim 5 , HgZnSe claim 5 , CdHgZnTe claim 5 , CdZnSeS claim 5 , ...

2H TO 1T PHASE BASED TRANSITION METAL DICHALCOGENIDE SENSOR FOR OPTICAL AND ELECTRONIC DETECTION OF STRONG ELECTRON DONOR CHEMICAL VAPORS

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors. 1. A system for detecting whether a chemical vapor comprises a strong electron donor , comprising:at least one sensor comprising a transition metal chalcogenide thin film comprising at least one region having a 2H phase;an apparatus for evaluating the transition metal chalcogenide thin film comprising at least one region having a 2H phase to assess whether the phase of the at least one region is 2H or 1T; anda transmitter that generates a signal indicating that the chemical vapor comprises a strong electron donor if the phase of the at least one region of the transition metal chalcogenide thin film has changed from 2H to 1T.2. The system of claim 1 , wherein the apparatus for evaluating the transition metal chalcogenide thin film is a Raman spectrometer claim 1 , photoluminescence spectrometer claim 1 , or electronic resistance sensor.3. The system of claim 1 , further comprising a heating element for annealing the at least one region of the transition metal chalcogenide thin film after the phase has changed from 2H to 1T claim 1 , thereby returning the at least one region of the transition metal chalcogenide thin film to the 2H phase.4. The system of claim 3 , wherein the heating element is provided ...

THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION MODULE, AND OPTICAL SENSOR

A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element. 1. A thermoelectric conversion material comprising:a base material that is a semiconductor composed of a base material element;a first additional element, the first additional element being an element different from the base material element, the first additional element having a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element, the first additional element forming a first additional level in a forbidden band of the base material; anda second additional element, the second additional element being an element different from both of the base material element and the first additional element, the second additional element forming a second additional level in the forbidden band of the base material, whereina difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.2. The thermoelectric conversion material according to claim 1 , wherein a crystal phase having a grain size of less than or equal to 50 nm and composed of the base material element is included in a structure of ...

APPLICATION OF LACTAM AS SOLVENT IN NANOMATERIAL PREPARATION

The present invention disclosed use of lactam as a solvent in the preparation of nanomaterials by precipitation method, sol-gel method or high temperature pyrolysis. These methods are able to recycle lactam solvent, which meet requirements of environmental protection. 1. A method of synthesizing nanomaterials comprising the step of:providing lactam as a solvent in a method for synthesizing nanomaterials.2. The method according to claim 1 , wherein the lactam is one or more of substances selected cyclic amide or a cyclic amide derivative.5. The method according to claim 2 , wherein the cyclic amide derivatives are selected from N-methylvalerolactam claim 2 , N-methylcaprolactam claim 2 , N-vinylcaprolactam and N-methoxycaprolactam.6. The method according to claim 1 , wherein the nanomaterials refer to substances containing inorganic particles with 1 nm Подробнее

ENHANCED CONDUCTIVITY METAL-CHALCOGENIDE FILMS VIA POST ELECROPHORETIC DEPOSITION (EPD) TREATMENT

A facile room-temperature method for assembling colloidal copper sulfide (CuS) nanoparticles into highly electrically conducting calcogenide material layer films utilizes ammonium sulfide for connecting the nanoparticles, while simultaneously effecting templating surfactant ligand removal. The foregoing process steps transform an as-deposited insulating films into a highly conducting films (i.e., having a conductivity at least about 75 S·cm). The methodology is anticipated as applicable to copper chalcogenides other than copper sulfide, as well as metal chalcogenides other than copper chalcogenides. The comparatively high conductivities reported are attributed to better interparticle coupling through the ammonium sulfide treatment. This approach presents a scalable room temperature route for fabricating comparatively highly conducting nanoparticle assemblies for large area electronic and optoelectronic applications. 1. A composition comprising:a substrate; and{'sup': '−1', 'a copper chalcogenide material layer located over the substrate and having a conductivity at least about 50 S·cm.'}2. The composition of wherein the copper chalcogenide material layer comprises:a layer of bare copper chalcogenide nanoparticles; anda layer of chalcogenide material laminated to the layer of bare copper chalcogenide nanoparticles and bridging to individual nanoparticles within the layer of bare copper chalcogenide nanoparticles.3. The composition of wherein the substrate comprises at least one of a conductor substrate and a semiconductor substrate.4. The composition of wherein the copper chalcogenide material layer comprises at least one chalcogenide selected from the group consisting of selenium and tellurium.5. The composition of wherein the copper chalcogenide material layer has a copper:chalcogen atomic ratio is from about 1.0 to about 2.0.6. The composition of wherein the conductivity is at least about 60 S·cm.7. The composition of wherein the conductivity is at least about 70 ...

LAYERED SUBSTANCE-CONTAINING LIQUID AND METHOD FOR PRODUCING SAME

A laminate of layered substances each containing two or more kinds of elements as constituent elements is contained in an ionic liquid containing a specific cation, and the ionic liquid containing the laminate is irradiated with one or both of sonic waves and electric waves. 3. The method for producing the layered substance-containing liquid according to claim 2 , wherein ultrasonic waves are used as the sonic waves claim 2 , and microwaves are used as the electric waves.4. The method for producing the layered substance-containing liquid according to claim 2 , further comprising subjecting the ionic liquid irradiated with one or both of the sonic waves and the electric waves to centrifugal separation.5. The method for producing the layered substance-containing liquid according to claim 4 , wherein a liquid phase is collected from the ionic liquid having been subjected to the centrifugal separation.6. The method for producing the layered substance-containing liquid according to claim 3 , further comprising subjecting the ionic liquid irradiated with one or both of the sonic waves and the electric waves to centrifugal separation. The present invention relates to a layered substance-containing liquid containing an ionic liquid together with a layered substance, and a method for producing the same.A substance having a layered structure (layered substance) exhibits characteristic physical properties resulting from the layered structure, and many researchers have been conducting research on various layered substances.In particular, recently, there has been proposed to use a layered substance called “nanosheet” for improvement of performance of electronic devices (for example, refer to Non-Patent Literature 1). A laminate of a plurality of (two to five) layers of layered substances, as well as a single-layer (one layer) layered substance, is used as the nanosheet.Accordingly, attention has been focused on layered substances having various kinds of compositions, ...

METHOD FOR THE PREPARATION OF LOW-DIMENSIONAL MATERIALS

The present invention provides a method for the preparation of low-dimensional materials, comprising mixing a pristine material to be abraded with an organic solvent to form a mixture, abrading the material to be abraded by bead-milling, obtaining a suspension comprising the material of low dimension and the organic solvent, and removing the organic solvent from the suspension to obtain the low-dimensional material. 1. A method for the preparation of low-dimensional materials , comprising:(i) mixing a pristine material to be abraded with an organic solvent to form a mixture;(ii) abrading the material to be abraded in the mixture by bead-milling,(iii) obtaining a suspension comprising the material of low dimension and the organic solvent; and(iv) removing the organic solvent from the suspension to obtain the low-dimensional material.2. The method according to claim 1 , wherein in step (ii) claim 1 , the bead-milling is carried out by feeding the mixture into a wet-milling machine with abrading beads for abrasion claim 1 , and the amount of the abrading beads in the inner space of the wet-milling machine is about 30% to 80%.3. The method of claim 1 , wherein the abrading beads are ceramic beads.4. The method of claim 2 , wherein the ratio of the abrading beads and the solvent in step (ii) is 5:1 to 1:1.5. The method of claim 4 , wherein the ratio of the abrading beads and the solvent in step (ii) is 4:1 to 3:1.6. The method of claim 2 , wherein the size of the abrading beads is from 20 μm to 1 mm.7. The method of claim 6 , wherein the size of the abrading beads is from 20 μm to 200 μm.8. The method of claim 7 , wherein the size of the abrading beads is from 50 μm to 100 μm.9. The method according to wherein the rate of the rotating blades of the wet-milling machine is from 10 to 6000 rpm claim 1 , preferably 1000 to 3000 rpm claim 1 , and more preferably 1500 to 2000 rpm.10. The method according to wherein the time for abrasion is from 30 minutes to 840 minutes.11. ...

TWO-DIMENSIONAL MATERIALS, METHODS OF FORMING THE SAME, AND DEVICES INCLUDING TWO-DIMENSIONAL MATERIALS

According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps. 1. A two-dimensional (2D) material element comprising:a first 2D material including a first metal chalcogenide-based material; anda second 2D material bonded to a side of the first 2D material, the second 2D material including a second metal chalcogenide-based material, the first 2D material and the second 2D material being chemically bonded to each other.2. The 2D material element of claim 1 , wherein the first 2D material and the second 2D material are covalently bonded to each other.3. The 2D material element of claim 1 , whereinthe first 2D material and the second 2D material are interatomically bonded to each other, andthe first 2D material and the second 2D material have a continuous crystal structure at a bonding portion between the first 2D material and the second 2D material.4. The 2D material element of claim 1 , whereinthe first metal chalcogenide-based material is a first transition metal dichalcogenide (TMDC) material,the second metal chalcogenide-based material is a second transition metal dichalcogenide (TMDC) material, andthe first and second metal dichalcogenide (TMDC) materials are different from each other.5. The 2D material element of claim 1 , wherein at least one of the first metal chalcogenide-based material and the second metal chalcogenide-based material include:a metal atom including one of Mo, W, Nb, V, Ta, Ti, Zr, Hf, Tc, Re, Cu, Ga, In, Sn, Ge, and Pb, anda chalcogen atom including one of S, Se, and Te.6. ...

CdTe-BASED COMPOUND SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME

Provided are a high resistance CdTe-based compound single crystal with miniaturized Te precipitates and a method for producing the same. According to one embodiment of the present invention, a CdTe based compound single crystal is provided including a precipitate having a particle size of less than 0.1 μm obtained from an analysis by a light scattering tomography method. In the CdTe based compound single crystal, resistivity may be 1×10 7 Ωcm or more. In addition, in the CdTe based compound single crystal, a precipitate having a particle size of 0.1 μm or more obtained from the analysis by the light scattering tomography method is not detected. In the CdTe based compound single crystal, the precipitate may be a Te precipitate.

MASK FREE METHODS OF DEPOSITING COMPOSITIONS TO FORM HETEROSTRUCTURES

The present disclosure provides methods of preparing heterostructures of two or more transition metal dichalcogenides on a surface in a pattern in which the method does not require a mask or blocking agent to create a pattern on the surface. Also provided herein are ink compositions which are used in the methods described herein and include precursor materials that generate these transition metal dichalcogenides. 1. An ink composition comprising:{'sub': 2', '2, 'claim-text': X is a monovalent cation;', 'M is a transition metal; and', 'L is a divalent chalcogen ligand; and, '(A) a metal salt of the formula: XML, wherein(B) deionized water;wherein the ink composition is substantially free of particles greater than 0.2 μm; or an ink composition of the formula:{'sub': a', 'b, 'claim-text': Y is a monovalent cation;', 'Z is a transition metal oxide of Group 6; and', 'a and b are each independently integers sufficient to balance the charge of the transition metal ion of Group 6; and, '(A) a metal salt of the formula: YZ, wherein(B) deionized water;wherein the ink composition is substantially free of particles greater than 0.2 μm and the composition is formulated for use in deposition process.2. The ink composition of claim 1 , wherein the metal salt is homogenously dispersed in the deionized water.3. The ink composition of claim 1 , wherein X is a quaternary ammonium.46.-. (canceled)7. The ink composition of claim 1 , wherein M is tungsten(VI) or molybdenum(VI).8. The ink composition of claim 1 , wherein L is sulfide or selenide.9. (canceled)10. The ink composition of claim 1 , wherein the metal salt is (NH)MoSor (NH)WS.1116.-. (canceled)17. The ink composition of claim 1 , wherein M is a transition metal oxide of Group 6 is of the formula:{'br': None, 'sub': 1', 'x', '1', 'y, 'sup': 'z+', '(M)(L)'} [{'sub': '1', 'Mis a transition metal of Group 6;'}, {'sub': '1', 'Lis an oxide ligand;'}, 'x is 2, 3, 4, 5, 6, 7, 8, 9, or 10;', 'y is 3-24; and', 'z is the resultant charge ...

Nanocrystal synthesis

A method of preparing monodisperse MX semiconductor nanocrystals can include contacting an M-containing precursor with an X donor to form a mixture, where the molar ratio between the M containing precursor and the X donor is large. Alternatively, if additional X donor is added during the reaction, a smaller ratio between the M containing precursor and the X donor can be used to prepare monodisperse MX semiconductor nanocrystals.

QUANTUM DOT DEVICE, FILM HAVING MULTILAYERED STRUCTURE, AND ELECTRONIC DEVICE

A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film. 1. A quantum dot device , comprisinga first electrode and a second electrode,a quantum dot layer disposed between the first electrode and the second electrode, anda hole transport layer disposed between the quantum dot layer and the first electrode, a first hole transport layer comprising a three-dimensional structure perovskite thin film, and', 'a second hole transport layer comprising a two-dimensional structure perovskite thin film., 'wherein the hole transport layer comprises'}2. The quantum dot device of claim 1 , wherein the three-dimensional structure perovskite thin film comprises a perovskite compound represented by Chemical Formula 1:{'br': None, 'sub': '3', 'AMX\u2003\u2003Chemical Formula 1'}wherein, in Chemical Formula 1,A is an ammonium cation having a C1 or C2 alkyl group, an ammonium cation having a C1 or C2 haloalkyl group, an ammonium cation having a C1 or C2 cyanoalkyl group, an ammonium cation having a C1 or C2 alkoxy group, a formamidinium cation, a halogen-substituted formamidinium cation, an alkali metal ion, or a combination thereof,M is a transition metal, a rare earth metal, or a combination thereof, and{'sup': −', '−', '−, 'sub': 6', '4, 'X is a halide ion, a combination of two or more different halide ions, CNS, PF, or BF.'}4. The quantum dot device of claim 1 , wherein the two-dimensional structure perovskite thin film ...

Purification of Nanocrystals for Thermoelectric, Solar, and Electronic Applications

Disclosed herein is a method of purifying and doping a population of semiconductor nanocrystals. The method includes mixing the population of semiconductor nanocrystals having a first material system and a first ligand with a set of particles in the presence of a first solvent, the set of particles having a second material system which is different from the first material system and a second ligand which is different from the first ligand, to form a mixture. The method also includes facilitating a ligand exchange and an ionic exchange in the mixture, altering the first material system of the population of semiconductor nanocrystals to a third material system, different from the first material system and the second material system. The method includes sonicating the mixture and isolating the population of semiconductor nanocrystals having the third material system and the second ligand from the mixture. 1. A method of exchanging an ion in a population of semiconductor nanocrystals , the method comprising:mixing the population of semiconductor nanocrystals having a first material system with a set of particles in the presence of a first solvent, the set of particles having a second material system which is different from the first material system, to form a mixture;facilitating an ionic exchange in the mixture, altering the first material system of the population of semiconductor nanocrystals to a third material system, different from the first material system and the second material system;sonicating the mixture; andisolating the population of semiconductor nanocrystals having the third material system from the mixture.2. The method of claim 1 , further comprising:washing the mixture to remove the first solvent; andadding a second solvent.3. The method of claim 2 , wherein the second solvent is the same as the first solvent.4. The method of claim 2 , wherein the second solvent is different from the first solvent.5. The method of claim 1 , further comprising:drying ...

SELECTIVE EPITAXIAL ATOMIC REPLACEMENT: PLASMA ASSISTED ATOMIC LAYER FUNCTIONALIZATION OF MATERIALS

Forming a two-dimensional Janus layer includes forming a layer of MX, where M is a transition metal and X is a first chalcogen, plasma etching the layer of MXto remove X from the top layer, thereby yielding an etched layer, and contacting the etched layer with a second chalcogen Y. The second chalcogen is different than the first chalcogen, resulting in a two-dimensional Janus layer including MXY. 1. A method of forming a two-dimensional Janus layer , the method comprising:{'sub': '2', 'forming a layer comprising MX, wherein M is a transition metal and X is a first chalcogen;'}{'sub': '2', 'plasma etching the layer comprising MXto remove X from the top layer, thereby yielding an etched layer; and'}contacting the etched layer with a second chalcogen Y, wherein the second chalcogen is different than the first chalcogen, thereby yielding a two-dimensional Janus layer comprising MXY.2. The method of claim 1 , wherein forming the layer comprising MXcomprises reacting a transition metal-containing compound with a chalcogen in a tube furnace to yield a transition metal-containing chalcogenide compound.3. The method of claim 2 , wherein reacting the transition metal-containing chalcogenide compound with the hydrogen radicals removes a layer of a chalcogen surface to yield a reduced transition-metal containing compound.4. The method of claim 1 , further comprising reacting the reduced transition metal-containing compound with the first chalcogen to yield the layer comprising MX.5. The method of claim 1 , wherein removing X and adding Y occurs simultaneously.6. The method of claim 1 , wherein the transition metal is selected from the group consisting of Mo claim 1 , Nb claim 1 , Ti claim 1 , V claim 1 , Cr claim 1 , Mn claim 1 , and W.7. The method of claim 1 , wherein the first chalcogen and the second chalcogen are selected from the group consisting of O claim 1 , S claim 1 , Se claim 1 , and Te.8. The method of claim 1 , wherein plasma etching the layer comprising MXoccurs ...

CONTINUOUS MICROWAVE-ASSISTED SEGMENTED FLOW REACTOR FOR HIGH-QUALITY NANOCRYSTAL SYNTHESIS

Systems and methods for synthesizing high-quality nanocrystals via segmented, continuous flow microwave-assisted reactor were developed. 1. A continuous , microwave-assisted , segmented flow reactor system for nanocrystal synthesis , comprising:a. a nanocrystal precursor source configured to comprise a nanocrystal precursor solution;b. a microwave reactor in fluid communication with the nanocrystal precursor source and having a fluid passageway passing through the microwave reactor configured to allow the nanocrystal precursor solution to pass therethrough; andc. a segmentation fluid source disposed in fluid communication with the fluid passageway at a location between the nanocrystal precursor source and the microwave reactor, the segmentation fluid source configured to provide a segmentation fluid that is immiscible with the nanocrystal precursor solution.2. The system of claim 1 , wherein the segmentation fluid source comprises a valve.3. The system of claim 1 , wherein the segmentation fluid source comprises a pump.4. The system of claim 1 , wherein the segmentation fluid comprises a gas claim 1 , a liquid claim 1 , or a combination thereof.5. The system of claim 1 , wherein the segmentation fluid comprises a gas claim 1 , a liquid claim 1 , or a combination thereof where bubble or droplet flow occurs.6. The system of claim 1 , wherein the nanocrystal precursor solution comprises Ni claim 1 , Cu claim 1 , In claim 1 , S claim 1 , Ga claim 1 , Se claim 1 , Pb claim 1 , Sn claim 1 , Zn claim 1 , P claim 1 , Cd claim 1 , Te claim 1 , Ge claim 1 , Si claim 1 , Hg claim 1 , O claim 1 , Ag claim 1 , Sb claim 1 , Bi claim 1 , Na claim 1 , or a combination thereof.7. The system of claim 1 , wherein the nanocrystal precursor source comprises a first nanocrystal precursor source and second nanocrystal precursor source; and the nanocrystal precursor solution comprises a first nanocrystal precursor solution and a second nanocrystal precursor solution.8. The system of claim ...

METHOD FOR PREPARING CLEAN INSULATING SINGLE OR FEW SHEETS OF TOPOLOGICAL INSULATORS USING AN IONIC LIQUID

A method to produce high quality single or a few atomic layers thick samples of a topological insulating layered dichalcogenide. The overall process involves grinding layered dichalcogenides, adding them to an ionic liquid, and then using a mechanical method to cause intercalation of the ionic liquid into the van der Waals (VDW) gap between the layers of the metal chalcogenide. 1. A method for preparing clean , insulating sheets of a topological insulator , comprising:adding a layered dichalcogenide to an ionic liquid, wherein the dichalcogenide comprises bismuth;using a mechanical method to cause intercalation of the ionic liquid into a van der Waals gap between the layers of the dichalcogenide;continuing the mechanical method to cause an individual sheet of the layered dichalcogenide to break apart or to cause a few sheets of the layered dichalcogenide to break apart with no bismuth remaining between the layers.2. The method of claim 1 , wherein the layered dichalcogenide is BiX claim 1 , where X is Se or Te.3. The method of claim 1 , wherein the ionic liquid comprises a tri-substituted imidazolium cation paired with a hydrophobic anion.4. The method of claim 1 , wherein the ionic liquid comprises 1 claim 1 ,2-dimethyl-3-octylimidazolium paired with bis(trifluoromethanesulfonyl)imide.5. The method of claim 1 , wherein the ionic liquid comprises a cation comprising phosphonium claim 1 , ammonium claim 1 , pyridinium claim 1 , imidazolium claim 1 , triazolium claim 1 , or any combination thereof.6. The method of claim 1 , wherein the ionic liquid comprises an anion comprising nitrate claim 1 , hypophosphite claim 1 , bromate claim 1 , carbonate claim 1 , tetrafluoroborate claim 1 , acetate claim 1 , hydrogensulfate claim 1 , hexafluoro-phosphate claim 1 , hexafluoro-arsenate claim 1 , or any combination thereof.7. The method of claim 1 , wherein the mechanical method comprises a vibrational interaction.8. The method of claim 1 , wherein the mechanical method ...

Quantum dot and wavelength converting member, lighting member, back light unit, and display device using quantum dot, and method of producing quantum dot

The present invention seeks to provide cadmium-free quantum dots with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHM is 30 nm or less. The quantum dot is preferably a nanocrystal containing zinc and tellurium or zinc and tellurium and sulfur or zinc and tellurium and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.

Use of sulfur and selenium compounds as precursors to nanostructured materials

The presently disclosed subject matter provides processes for preparing nanocrystals, including processes for preparing core-shell nanocrystals. The presently disclosed subject matter also provides sulfur and selenium compounds as precursors to nanostructured materials. The presently disclosed subject matter also provides nanocrystals having a particular particle size distribution.

Sorting Two-Dimensional Nanomaterials by Thickness

The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s). 1. A method for separating planar nanomaterials by thickness , the method comprising:centrifuging a transition metal dichalcogenide nanomaterial composition in contact with an aqueous fluid medium comprising a density gradient, wherein the transition metal dichalcogenide nanomaterial composition comprises one or more surface active components and a polydisperse population of planar transition metal dichalcogenide nanomaterials which is polydisperse at least with respect to thickness and has a mean thickness on the order of nanometers; andseparating the transition metal dichalcogenide nanomaterial composition into two or more separation fractions each comprising a subpopulation of planar transition metal dichalcogenide nanomaterials from the polydisperse population, wherein the subpopulation of planar transition metal dichalcogenide nanomaterials in at least one of the two or more separation fractions has a mean thickness that is less than the mean thickness of the polydisperse population.2. The method of claim 1 , wherein the planar nanomaterials comprise MoS claim 1 , MoSe claim 1 , WSor WSeplanar nanomaterials.3. The method of claim 1 , wherein the one or more surface active components comprise a planar organic group.4. The method of claim 3 , wherein the one or more surface active components is a copolymer of oxyethylene and oxypropylene.5. A method for separating transition metal dichalcogenide nanomaterials by thickness claim 3 , the method comprising:sonicating transition metal dichalcogenide in a first fluid medium to provide a transition metal dichalcogenide nanomaterial composition;centrifuging the transition metal dichalcogenide nanomaterial composition in contact with an aqueous second fluid ...

MULTI-ELEMENT ANIONIC REAGENT COMPLEXES

Reagent complexes have two or more elements, formally in oxidation state zero, complexed with a hydride molecule. Complexation with the hydride molecule may be evidenced by shifts to lower binding energies, of one or more electrons in each of the two or more elements, as observed by x-ray photoelectron spectroscopy. The reagents can be useful for the synthesis of multi-element nanoparticles. Preparation of the reagents can be achieved by ball-milling a mixture that includes powders of two or more elements and a hydride molecule. 3. The reagent as recited in claim 2 , wherein Ris copper and R′ is selenium.4. The reagent as recited in claim 2 , wherein Ris nickel and R′ is germanium.5. The reagent as recited in claim 2 , wherein Ris selenium and R′ is germanium.6. The reagent as recited in claim 2 , wherein X is lithium borohydride.9. The reagent as recited in claim 8 , wherein Ris cadmium claim 8 , R′ is selenium claim 8 , and R″ is boron.10. The reagent as recited in claim 1 , wherein the hydride molecule claim 1 , X claim 1 , comprises lithium borohydride.12. The method as recited in claim 11 , wherein the first element is nickel and the second element is germanium.13. The method as recited in claim 11 , wherein the first element is copper and the second element is selenium.14. The method as recited in claim 11 , wherein the first element is selenium and the second element is germanium.15. The method as recited in claim 11 , wherein the powders of at least two elements comprises a powder of a third element of the second element type.16. The method as recited in claim 11 , wherein the powders of at least two elements comprises a powder of a third element of a third element type selected from the group including: metals claim 11 , metalloids claim 11 , and non-metals17. The method as recited in claim 16 , wherein the first claim 16 , second claim 16 , and third elements are cadmium claim 16 , selenium claim 16 , and boron. This application claims the benefit of U.S. ...

HUMIC ACID-BASED SUPERCAPACITORS

A supercapacitor electrode comprising a mixture of graphene sheets and humic acid, wherein humic acid occupies 0.1% to 99% by weight of the mixture and the graphene sheets are selected from a pristine graphene material having essentially zero % of non-carbon elements, or a non-pristine graphene material having 0.001% to 5% by weight of non-carbon elements wherein said non-pristine graphene is selected from graphene oxide, reduced graphene oxide, graphene fluoride, graphene chloride, graphene bromide, graphene iodide, hydrogenated graphene, nitrogenated graphene, chemically functionalized graphene, or a combination thereof; and wherein said mixture has a specific surface area greater than 500 m/g. 1. A supercapacitor electrode comprising humic acid molecules having an oxygen content of 0.01% to 42% by weight as an electrode active material , wherein said electrode has a specific surface area greater than 500 m/g.2. The supercapacitor electrode of claim 1 , wherein said oxygen content is from 0.01% to 5% by weight.3. The supercapacitor electrode of claim 1 , wherein said electrode comprises multiple particulates that are porous and each particulate is composed of multiple humic acid molecules packed into a spherical or ellipsoidal shape.4. The supercapacitor electrode of claim 1 , wherein said electrode has a specific surface area greater than 1 claim 1 ,000 m/g.5. The supercapacitor electrode of claim 1 , wherein said electrode has a specific surface area greater than 1 claim 1 ,500 m/g.6. A supercapacitor comprising an anode claim 1 , a cathode claim 1 , a porous separator disposed between said anode and said cathode claim 1 , a liquid electrolyte in ionic contact with said anode and said cathode claim 1 , wherein at least one of said anode and said cathode contains said supercapacitor electrode of .7. The supercapacitor as defined in claim 6 , wherein said humid acid molecules are bonded by or bonded to a conductive binder material selected from the group ...

POSITIVE-ELECTRODE ACTIVE MATERIAL FOR LITHIUM-ION SECONDARY BATTERY, POSITIVE ELECTRODE AND LITHIUM-ION SECONDARY BATTERY

An object of the present invention is to provide a novel sulfur-based positive electrode active material for a lithium-ion secondary battery which is excellent in cyclability and can largely improve a charging and discharging capacity, a positive electrode comprising the positive electrode active material and a lithium-ion secondary battery made using the positive electrode. The sulfur-based positive electrode active material is obtainable by subjecting a starting material comprising a polymer, sulfur and an organometallic compound dispersed in a form of fine particles to heat-treatment under a non-oxidizing atmosphere, wherein the particles of metallic sulfide resulting from sulfurization of the organometallic compound are dispersed in the heat-treated material, and particle size of the metallic sulfide particles is not less than 10 nm and less than 100 nm. 1. A sulfur-based positive electrode active material , which is obtainable by subjecting a starting material comprising a polymer , sulfur and an organometallic compound dispersed in a form of fine particles to heat-treatment under a non-oxidizing atmosphere , wherein particles of metallic sulfide resulting from sulfurization of the organometallic compound are dispersed in the heat-treated material , andparticle size of the metallic sulfide particles is not less than 10 nm and less than 100 nm.2. The sulfur-based positive electrode active material of claim 1 , wherein the metal comprises at least one selected from the group consisting of Period 4 metals claim 1 , Period 5 metals claim 1 , alkali metals and alkali-earth metals.3. The sulfur-based positive electrode active material of claim 1 , wherein the metal comprises at least one selected from the group consisting of Na claim 1 , Mg claim 1 , Ti claim 1 , Cr claim 1 , Fe claim 1 , Ni claim 1 , Cu claim 1 , Zn claim 1 , Ru claim 1 , Nb claim 1 , Sb and Te.4. The sulfur-based positive electrode active material of claim 1 , wherein the metal comprises at least ...

ATOMICALLY THIN CRYSTALS AND FILMS AND PROCESS FOR MAKING SAME

The invention provides a process for exfoliating a 3-dimensional layered material to produce a 2-dimensional material, said process comprising the steps of mixing the layered material in a solvent to provide a mixture; applying energy, for example ultrasound, to said mixture, and removing the energy applied to the mixture, such that sedimentation of the 2-dimensional material out of solution as a weakly re-aggregated, exfoliated 2-dimensional material is produced. The invention provides a fast, simple and high yielding process for separating 3-dimensional layered materials into individual 2-dimensional layers or flakes, which do not strongly re-aggregate, without utilising hazardous solvents. 1. A process for exfoliating a 3-dimensional layered material to produce a 2-dimensional material said process comprising the steps of:mixing the layered material in water to provide a mixture;applying energy, for example ultrasound, to said mixture to exfoliate the 3-dimensional layered material and produce dispersed exfoliated 2-dimensional material; andremoving the energy applied to the mixture, such that sedimentation of the 2-dimensional material out of solution as a weakly re-aggregated, exfoliated 2-dimensional material is produced.2. A process according to claim 1 , further comprising the step of removing the water from the re-aggregated exfoliated 2-dimensional material to form a solid of re-aggregated exfoliated 2-dimensional material.3. A process according to claim 1 , further comprising the step of removing the water from the re-aggregated exfoliated 2-dimensional material to form a solid of re-aggregated exfoliated 2-dimensional material claim 1 , wherein the step of removing the water is by decantation claim 1 , vacuum filtration or accelerated evaporation.41. A process according to claim 1 , further comprising the step of removing the water from the re-aggregated exfoliated 2-dimensional material to form a solid of re-aggregated exfoliated 2-dimensional material ...

A process for the continuous production of sub-micron two-dimensional materials such as graphene

A system and a method of continuously separating submicron thickness laminar solid particles from a solid suspension, segregating the suspension into a submicron thickness particle fraction suspension and a residual particle fraction suspension, the method comprising the steps of; providing a continuous centrifuge apparatus; providing a suspension of submicron thickness laminar solid particles in a solid suspension; wherein the solid suspension comprises the submicron thickness solid particles in a liquid continuous phase; separating the solid suspension in the apparatus.

ELECTRICALLY CONDUCTIVE THIN FILMS

An electrically conductive film including a compound represented by Chemical Formula 1 and having a layered crystal structure: 2. The electrically conductive film of claim 1 , which has transmittance of greater than or equal to about 80% at a thickness of less than or equal to 50 nm for light having a wavelength of 550 nm.3. The electrically conductive film of claim 1 , wherein Ch is tellurium.4. The electrically conductive film of claim 1 , wherein the compound of Chemical Formula 1 is PdTe claim 1 , AgTe claim 1 , IrTe claim 1 , PtTe claim 1 , AuTe claim 1 , or a combination thereof.5. The electrically conductive film of claim 1 , wherein the electrically conductive film does not comprise an oxide layer on a surface thereof.6. The electrically conductive film of claim 1 , wherein the electrically conductive film has an electrical conductivity of greater than or equal to about 4300 Siemens per centimeter.7. The electrically conductive film of claim 6 , wherein the electrically conductive film has an electrical conductivity after bending 180° around a rod having a diameter 10 millimeters which is about 80% to 100% of an electrical conductivity before the bending.8. The electrically conductive film of claim 1 , wherein a product of an absorption coefficient for light having a wavelength of 550 nm and a resistivity value is less than or equal to about 30 ohms per square.9. The electrically conductive film of claim 1 , wherein the layered crystal structure belongs to a hexagonal system and has a space group of P m1.10. The electrically conductive film of claim 1 , wherein the compound is monocrystalline.11. The electrically conductive film of claim 1 , wherein the electrically conductive film comprises a plurality of nanosheets comprising the compound of Chemical Formula 1 claim 1 , and wherein the nanosheets contact one another to provide an electrical connection.12. The electrically conductive film of claim 1 , wherein the electrically conductive film is in the form ...

ELECTRICALLY CONDUCTIVE THIN FILMS

An electrically conductive thin film including a compound represented by Chemical Formula 1 or Chemical Formula 2 and having a layered crystal structure: 2. The electrically conductive thin film of claim 1 , wherein the compound comprises TiTe claim 1 , NbTe claim 1 , TaTe claim 1 , or a combination thereof.3. The electrically conductive thin film of claim 1 , wherein the film has an electrical conductivity of greater than or equal to about 2200 Siemens per centimeter.4. The electrically conductive thin film of claim 1 , wherein for the compound claim 1 , a product of an absorption coefficient for light having a wavelength of about 550 nanometers and a resistivity value is less than or equal to about 30 ohms per square.5. The electrically conductive thin film of claim 1 , wherein the layered crystal structure belongs to a hexagonal system in space group P-3m1 or a monoclinic system in space group C12/m1.6. The electrically conductive thin film of claim 1 , which comprises a monocrystal of the compound.7. The electrically conductive thin film of claim 1 , which comprises a plurality of nanosheets including the compound claim 1 , wherein the nanosheets contact one another to provide an electrical connection.8. The electrically conductive thin film of claim 1 , which comprises a continuous deposition film including the compound.9. The electrically conductive thin film of claim 1 , which has transmittance of greater than or equal to about 50 percent at a thickness of about 10 nanometers for light having a wavelength of about 550 nm.10. The electrically conductive thin film of claim 1 , wherein when in a form of a 50 nanometer thick film on a 150 micrometer thick polyethylene substrate claim 1 , the film and the substrate can be bent 180° around a rod having a diameter of 5 centimeters with less than a 5% loss in electrical conductivity.12. The electronic device of claim 11 , wherein the electrically conductive thin film comprises TiTe claim 11 , NbTe claim 11 , TaTe ...

THREE-DIMENSIONAL ASSEMBLED ACTIVE MATERIAL FROM TWO-DIMENSIONAL SEMICONDUCTOR FLAKES FOR OPTOELECTRONIC DEVICES

A process for preparing stacks of metal chalcogenide flakes includes: (a) reacting together a source of the metal atom of the target metal chalcogenide with a source of the chalcogenide atom of the target metal chalcogenide, in the presence of a spacer, so as to produce flakes of the metal chalcogenide; (b) depositing metal chalcogenide flakes obtained using step (a) onto a substrate to form a stack of assembled metal chalcogenide flakes, wherein the spacer contains an alkyl chain linked to a functional group able to bond to the metal chalcogenide surface, said alkyl chain having a length of less than 18 carbon atoms, preferably between 6 and 14 carbon atoms. 1. Process for preparing stacks of metal chalcogenide flakes comprising the steps of:(a) reacting together a source of the metal atom of the target metal chalcogenide with a source of the chalcogenide atom of the target metal chalcogenide, in the presence of a spacer, so as to produce flakes of the metal chalcogenide;(b) depositing metal chalcogenide flakes obtained using step (a) onto a substrate to form a stack of assembled metal chalcogenide flakes,wherein the spacer contains an alkyl chain linked to a functional group able to bond to the metal chalcogenide surface, said alkyl chain having a length of less than 18 carbon atoms.2. Process according to claim 1 , wherein the metal chalcogenide is a sulfide claim 1 , selenide or telluride of Cd claim 1 , Pb claim 1 , In claim 1 , Sb claim 1 , Zn claim 1 , Mo claim 1 , W claim 1 , In and/or Ga.3. Process according to claim 1 , wherein the metal chalcogenide is selected from the group consisting of: indium selenide (InSe) claim 1 , molybdenum sulfide (MoS) claim 1 , lead telluride (PbTe) claim 1 , and lead sulfide (PbSe).4. Process according to any of claim 1 , wherein the functional group is selected from the group consisting of: primary amine (—NH) claim 1 , thiol (—SH) claim 1 , carboxylic acid (—COH) claim 1 , and phosphonic acid (—PO(OH)).5. Process according ...

METHODS OF PRODUCING METAL SULFIDES, METAL SELENIDES, AND METAL SULFIDES/SELENIDES HAVING CONTROLLED ARCHITECTURES USING KINETIC CONTROL

The present invention is directed to methods of preparing metal sulfide, metal selenide, or metal sulfide/selenide nanoparticles and the products derived therefrom. In various embodiments, the nanoparticles are derived from the reaction between precursor metal salts and certain sulfur- and/or selenium-containing precursors each independently having a structure of Formula (I), (II), or (III), or an isomer, salt, or tautomer thereof, where Q,Q,Q,R,R,R,R, and X are defined within the specification. 2. The method of claim 1 , comprising contacting two precursor metal salts with the sulfur-containing precursor claim 1 , the selenium-containing precursor claim 1 , or a combination of the sulfur-containing and selenium-containing precursors to form the nanoparticles.3. The method of comprising contacting a precursor metal salt with a combination of a sulfur-containing precursor and a selenium-containing precursor to form the nanoparticles.5. The method of claim 1 , wherein a mixture of a sulfur-containing and a selenium-containing precursor is used claim 1 , the sulfur-containing and selenium-containing precursors exhibiting pseudo first order kinetics with respect to the metal precursor salt claim 1 , the pseudo first kinetics of each having an associated pseudo first order rate constant claim 1 , the ratio of the pseudo first order rate constants being in a range of from 1 to 10 claim 1 , under the reaction conditions employed.6. The method of claim 5 , wherein the pseudo-first order rate constants claim 5 , k(s) associated with at least one of the sulfur-containing or selenium-containing precursors with the metal containing precursor salt is in a range from 1×10to 1×10.8. The method of claim 5 , wherein Rand Rare claim 5 , within the same structure claim 5 , linked to form a 5- to 10-membered heterocycle comprising an optionally substituted alkylene or an optionally substituted and/or conjugated alkenylene linkage.15. The method of claim 14 , wherein Qis phenyl or ...

MATERIALS AND METHODS FOR CORROSION INHIBITION OF ATOMICALLY THIN MATERIALS

Methods and materials for providing corrosion protection for atomically thin materials are described. In some embodiments, an atomically thin material may have a coating that includes one or more alkyl amine species. The coating may cover at least a portion of the atomically thin material, and the coating may form a corrosion protection layer. Depending on the particular materials, a coating may be ionically bonded to at least a portion of an atomically thin material. In some embodiments, a method of forming a corrosion protection layer on at least a portion of an atomically thin material may involve exposing at least a portion of an atomically thin material that corrodes under normal atmospheric conditions to an alkyl amine. 1. A material comprising:an atomically thin material that corrodes under normal atmospheric conditions; anda coating comprising an alkyl amine covering at least a portion of the atomically thin material, wherein the alkyl amine coating forms a corrosion protection layer.2. The material of claim 1 , wherein the coating covers substantially all exposed surfaces of the atomically thin material.3. The material of claim 1 , wherein the alkyl amine has the chemical formula CHNH claim 1 , wherein n is between or equal to 4 and 11.4. The material of claim 1 , wherein the alkyl amine comprises an alkyl group between or equal to 4 and 11 carbons in length.5. The material of claim 4 , wherein the alkyl group is unbranched.6. The material of claim 1 , wherein the alkyl amine comprises an unbranched alkyl amine.7. The material of claim 1 , wherein the alkyl amine comprises at least one of butylamine claim 1 , pentylamine claim 1 , hexylamine claim 1 , heptylamine claim 1 , octylamine claim 1 , nonylamine claim 1 , decylamine claim 1 , or undecylamine.8. The material of claim 1 , wherein the coating is a monolayer.9. The material of claim 1 , wherein the atomically thin material comprises at least one of black phosphorus claim 1 , a transition metal ...

Direct assembly of hydrophobic nanoparticles to multifunction structures

A general process that allows convenient production of multifunctional composite particles by direct self-assembly of hydrophobic nanoparticles on host nanostructures containing high density surface thiol groups is present. Hydrophobic nanoparticles of various compositions and combinations can be directly assembled onto the host surface through the strong coordination interactions between metal cations and thiol groups. The resulting structures can be further conveniently overcoated with a layer of normal silica to stabilize the assemblies and render them highly dispersible in water for biomedical applications. As the entire fabrication process does not involve complicated surface modification procedures, the hydrophobic ligands on the nanoparticles are not disturbed significantly so that they retain their original properties such as highly efficient luminescence. Many complex composite nanostructures with tailored functions can be efficiently produced by using this versatile approach. For example, multifunctional nonspherical nanostructures can be efficiently produced by using mercapto-silica coated nano-objects of arbitrary shapes as hosts for immobilizing functional nanoparticles. Multilayer structures can also be achieved by repeating the mercapto-silica coating and nanoparticle immobilization processes. Such assembly approach will provide the research community a highly versatile, configurable, scalable, and reproducible process for the preparation of various multifunctional structures.

Method for purifying gaseous hydrides

A method for purifying a gaseous hydride, which comprises bringing a crude gaseous hydride into contact with at least one material selected from copper arsenides, copper phosphides, copper silicides, copper selenides, copper borides or copper sulfides to remove oxygen contained in the crude gaseous hydride.

Patent JPWO2021111777A1

Preparation method of magic-size nanocrystal substance

魔尺寸纳米晶类物质的制备方法，以含有元素周期表ⅡB族、ⅢA和

Electrically conductive thin films

하기 화학식 1 로 나타내어지고, 층상 결정구조를 가지는 화합물을 포함하는 전도성 박막 및 이를 포함하는 전자 소자에 대한 것이다: [화학식 1] MeCh 2 여기서, Me는, Ru, Os, Re, Rh, Ir, Pd, Pt, Cu, Ag, 또는 Au이고, Ch는 황, 셀레늄, 또는 텔루리움임. A conductive thin film including a compound represented by the following Chemical Formula 1 and having a layered crystal structure, and an electronic device including the same: [Formula 1] MeCh 2 Here, Me is Ru, Os, Re, Rh, Ir, Pd, Pt, Cu, Ag, or Au, and Ch is sulfur, selenium, or tellurium.

Positive electrode active material for lithium-ion secondary battery, positive electrode and lithium-ion secondary battery

Method and Apparatus for Supplying Hydrogen Selenide Mixed Gas for Solar Cell

발명의 태양 전지용 셀렌화 수소 혼합 가스의 공급 방법은, 기반 가스 공급 유로(L1)로부터 공급되는 불활성 가스와, 원료 가스 공급 유로(L2)로부터 공급되는 100 % 셀렌화 수소 가스를 혼합하는 것에 의해 소정의 농도로 조정한 셀렌화 수소 혼합 가스를 공급하는 공정을 가지며, 상기 공급 공정에 있어서, 해당 원료 가스 공급 유로(L2)에 설치된 유량 제어 수단(12)에 의해, 상기 100 % 셀렌화 수소 가스의 유량을 소정의 유량으로 제어하고, 상기 유량 제어 수단(12)의 하류 측에 설치된 압력 제어 수단(13)에 의해, 상기 유량 제어 수단(12)과 해당 압력 제어 수단(13)과의 사이의 상기 100 % 셀렌화 수소 가스의 압력을 소정의 압력으로 제어한다.

Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

Method for safe handling of unstable hydride gases

A method for safely handling unstable hydrides in an enclosure which contains a hydride and has one or more openings, by partitioning the enclosure into smaller but interconnected volumes and providing heat storage and transfer within the enclosure to rapidly remove heat from any incipient hot spot before it can reach a temperature where it could rapidly propagate to the rest of the enclosure. The minimum temperature used to size the partitions is the thermal decomposition temperature for unstable gases which can decompose without oxidation such as hydrazine, silane and germane. A preferred embodiment includes where the partitioning material comprises part or all of the means to store the heat and has a large surface area to rapidly adsorb heat from the gases in the smaller volume. An even more preferred embodiment is where the partitioning material comprises materials that can be poured into the enclosure. The use of sensible heat, phase change or chemical reactions is feasible ways to store the heat. The materials chosen for the partitioning means and the heat sink are substantially free from adsorbing the gas contained in the enclosure.

A scalable process for producing exfoliated defect-free, non-oxidised 2-dimensional materials in large quantities

一种片状剥离未处理的三维材料来制备二维材料的方法,所述方法包含下述步骤：在液体中混合未处理的三维材料，以提供混合物；将剪切力施加到所述混合物，从而片状剥离三维材料和制备在溶液中分散的片状剥离的二维材料；和解除施加到所述混合物的剪切力,从而分散的片状剥离的二维材料在溶液中仍然是游离的和非聚集的。

Patent JPWO2020217649A1

Method and apparatus for supplying hydrogen selenide mixed gas for solar cell

本发明的太阳能电池用硒化氢混合气体的供给方法，具有供给工序，通过对从基本气体供给流路(L1)供给的惰性气体与从原料气体供给流路(L2)供给的100％硒化氢气体进行混合，来供给已调整为规定浓度的硒化氢混合气体，在所述供给工序中，通过设置于该原料气体供给流路(L2)的流量控制单元(12)，将所述100％硒化氢气体的流量控制为规定流量，并通过在所述流量控制单元(12)的下游侧设置的压力控制单元(13)，将所述流量控制单元(12)与该压力控制单元(13)之间的所述100％硒化氢气体的压力控制为规定压力。

Method for purifying gaseous hydrides

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Manufacturing method of coating liquid and thermoelectric member

Positive-electrode active material for lithium-ion secondary battery, positive electrode and lithium-ion secondary battery

An object of the present invention is to provide a novel sulfur-based positive electrode active material for a lithium-ion secondary battery which is excellent in cyclability and can largely improve a charging and discharging capacity, a positive electrode comprising the positive electrode active material and a lithium-ion secondary battery made using the positive electrode. The sulfur-based positive electrode active material is obtainable by subjecting a starting material comprising a polymer, sulfur and an organometallic compound dispersed in a form of fine particles to heat-treatment under a non-oxidizing atmosphere, wherein the particles of metallic sulfide resulting from sulfurization of the organometallic compound are dispersed in the heat-treated material, and particle size of the metallic sulfide particles is not less than 10 nm and less than 100 nm.

A scalable process for producing exfoliated defect-free, non-oxidised 2-dimensional materials in large quantities

A process for exfoliating untreated 3-dimensional material to produce a 2-dimensional material, said process comprising the steps of mixing the untreated 3-dimensional material in a liquid to provide a mixture; applying shear force to said mixture to exfoliate the 3-dimensional material and produce dispersed exfoliated 2-dimensional material in solution; and removing the shear force applied to said mixture, such that the dispersed exfoliated 2-dimensional material remains free and unaggregated in solution.

Compound semiconductors comprising hetero metal and method for fabricating the same

본 발명은 열전 재료 등의 용도로 사용될 수 있는 신규한 화합물 반도체 및 그 제조방법을 개시한다. 본 발명에 따른 화합물 반도체는, 이종 금속이 첨가된 화합물 반도체이며, 다음의 화학식 1과 같이 표시될 수 있다. <화학식 1> Bi 2 Te x Se a - x In y Me z 상기 화학식 1에서, Me는 Zn, Mn, Ti, Mo 및 Zr로 이루어진 군으로부터 선택된 어느 하나 이상이고, 2.5< x <3.0, 3.0≤ a <3.5, 0<y 및 0<z이다. The present invention discloses a novel compound semiconductor which can be used for a thermoelectric material or the like and a method for producing the same. The compound semiconductor according to the present invention is a compound semiconductor to which a dissimilar metal is added and can be represented by the following chemical formula (1). &Lt; Formula 1 > Bi 2 Te x Se a - x In y Me z In Formula 1, Me is at least one selected from the group consisting of Zn, Mn, Ti, Mo and Zr, and 2.5 <x <3.0, 3.0≤a <3.5, 0 <y and 0 <z.

Electrically conductive thin films

A kind of supper-fast preparation Ag2The method of X block thermoelectric materials

本发明首次公开了一种超快速制备Ag 2 X(X＝Se,Te)块体热电材料的方法，它以Ag粉和Se或Te粉为原料，首先将原料进行简单拌匀，将所得混合原料装入石墨模具中，置于等离子体活化烧结设备中在等离子体活化烧结工艺的等离子体活化阶段制备得到致密的Ag 2 X块体热电材料，使Ag 2 X化合物的反应合成和致密化过程一步完成。本发明涉及的工艺超简单、制备时间超短，所制备的Ag 2 X块体热电材料性能优越，为Ag 2 X化合物的规模化制备和大规模应用奠定了良好的基础。

Electrically conductive thin film and Electronic device comprising the same

本发明公开导电薄膜和包括其的电子器件。所述导电薄膜包括由化学式1或化学式2表示并且具有层状晶体结构的化合物，在化学式1中，M 1 是钛(Ti)、锆(Zr)、铪(Hf)、钒(V)、钽(Ta)、或铌(Nb)；和在化学式2中，M 2 是钒(V)或钽(Ta)。化学式1M 1 Te 2 化学式2M 2 Se 2 。

Method for producing vanadium selenide for the active part of a gamma radiation source

The invention relates to nuclear engineering, primarily to the field of producing gamma radiation sources that can be used in various fields of industry, for example in gamma-ray flaw detection for carrying out radiographic testing. The problem addressed by the proposed technical solution is that of reducing the labour intensity and lead time of a process for producing vanadium selenide VSe2 for forming the active part of gamma radiation sources, simplifying the production equipment and increasing the safety of the process. The technical result in the proposed method for producing vanadium selenide is achieved by the mixing of fine selenium and vanadium powders with a particle size of no more than 200 µm, and subsequent two-stage heat treatment in an inert, hermetically sealed container.

Layered substance-containing liquid and method for producing same

특정의 카티온을 포함하는 이온 액체에, 2종류 이상의 원소를 구성 원소로서 포함하는 층상 물질의 적층물을 함유시켜, 그 적층물을 함유하는 이온 액체에, 음파 및 전파 중의 적어도 한쪽을 조사한다. An ionic liquid containing a specific cation is made to contain a laminate of layered substances containing two or more elements as constituent elements, and the ionic liquid containing the laminate is irradiated with at least one of sound waves and radio waves.

Process for preparation of compound containing 6a group element using reductant

Provided is a process for preparation of a compound containing a group 6A element which includes reaction of at least one compound selected from a group consisting of group IB element containing compounds and group 3 A element containing compounds with a group 6A element containing compound carried out using a reductant in a desirable solvent to produce a compound containing group 1B-6A elements, a compound containing group 3 A-6A elements and/or a compound containing group 1B-3A-6A elements.

Synthesis process of hydrogen selenide

本发明公开了一种硒化氢的合成工艺：将硒粉和铝粉放于石英管式真空炉内形成密闭系统，将管式炉抽真空并反应；加入不锈钢反应釜内持续通入氮气流进行吹扫；开启搅拌，将蒸馏水经由注射器缓慢滴加到反应釜内，反应过程开始；反应产生的气体经一级冷肼和干燥管除去气体中的水分，经二级冷肼进行冷凝，收集制备的硒化氢。本发明采用两步法合成硒化氢，使用不锈钢反应釜提高了整个反应过程中的安全和稳定性。

Preparation method of high-purity arsenic telluride

本发明公开了一种高纯度碲化砷的制备方法，包括如下步骤：装料准备：在反应炉中的反应容器中装入原料碲和原料砷；抽真空，使得所述反应炉中的气压降至5×10‑4Pa以下，随后向所述反应炉中通入惰性气体至达到第一气压；一次反应：维持所述第一气压，控制所述反应炉中的温度以5℃/min至10℃/min的速度升高至500℃至550℃，并封闭所述反应容器，保温保压30mins至60mins；二次反应：在所述一次反应步骤结束后，向所述反应炉中继续通入惰性气体，使气压升高至第二气压；控制所述反应炉中的温度以15℃/min至20℃/min的速度升高至850℃至900℃，保温保压90mins至120mins，随后可得碲化砷成品。这种高纯度碲化砷的制备方法可以高收率地获得高纯度碲化砷。

Two-dimensional chalcogenide-based materials, methods of forming the same, and devices including the two-dimensional chalcogenide-based materials

According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.

Compound semiconductor particles and production process therefor

There are provided: compound semiconductor particles that can display more excellent performance in functions peculiar to the compound semiconductor (e.g. luminosity and luminescence efficiency); and a production process for obtaining such compound semiconductor particles with economy, good productivity, and ease. Compound semiconductor particles, according to the present invention, are characterized by comprising body particles and a metal oxide, wherein the body particles have particle diameters of smaller than 1 µm and are covered with the metal oxide and include a compound semiconductor including an essential element combination of at least one element X selected from the group consisting of C, Si, Ge, Sn, Pb, N, P, As, Sb, S, Se, and Te and at least one metal element M that is not identical with the element X, and wherein the metal oxide is a metal oxide to which an acyloxyl group is bonded.

Preparation method and application of copper selenide nanosheet array for sodium-ion battery with adjustable interlayer spacing

本发明提供了一种层间距可调的钠离子电池用硒化铜纳米片阵列的制备方法及其应用，所述硒化铜纳米片阵列是以高纯铜箔、硒源、氢氧化钠、强还原剂、插层剂为原料，以水为溶剂，在20～80℃下反应0.5～4 h，获得一种层间距可调的钠离子电池用硒化铜纳米片阵列。本发明的突出特点在于以较低的温度实现硒化铜层间距的调控，且该材料制备方法简单，能耗低，易于工业化大规模生产；其次硒化铜纳米片阵列排列一致性好，形貌可控，具有较高的比表面积。该材料用作钠离子电池负极材料时，表现出比容量高、倍率性能好、循环性能优越的优点。因此该材料有望在钠离子电池以及其他碱金属离子电池，热电材料等领域取得广泛应用。

Molybdenum selenide nanosheets/graphene nanoribbons composite material and preparation method thereof

本发明属于过渡金属硫族化合物-碳材料技术领域，具体为一种硒化钼/石墨烯纳米带复合材料及其制备方法。本发明通过溶液氧化法制备石墨烯纳米带，再通过溶剂热法在石墨烯纳米带上原位生长硒化钼纳米片。本发明所制备的石墨烯纳米带具有化学性质稳定、长径比高等优点；本发明制备的复合材料具有形貌可控的特点，硒化钼纳米片均匀地负载在石墨烯纳米带上，有效地抑制了硒化钼自身的团聚，充分利用了石墨烯纳米带独特的高比表面积和高导电性。本发明所制备的硒化钼纳米片/石墨烯纳米带复合材料可成为一种理想的高性能电化学析氢催化材料，以及锂离子电池和太阳能电池等新能源器件的电极材料。

Supplying method and supplier of hydrogen selenide-mixed gas

Ultrathin nanowire-based and nanoscale heterostructure-based thermoelectric conversion structures and method of making same

텔루륨의 막대형 결정질 구조를 포함하는 초박 텔루륨 나노와이어 구조가 개시되고, 상기 결정질 구조는 5㎚ 내지 6㎚의 직경으로 한정된다. 추가로, 텔루르화 납과 텔루르화 비스무트 중 하나의 막대형 결정질 구조를 포함하는 초박 텔루륨계 나노와이어 구조가 개시되고, 초박 텔루륨 나노와이어 구조는 전구체로 사용되어 막대형 결정질 구조를 만든다. 또한, 중심 막대형 부분과 상기 중심 막대형 부분 각각의 각 단부에 연결된 하나의 8면체 구조를 갖는 덤벨형 결정질 헤테로구조를 포함하는 나노규모의 헤테로구조 텔루륨계 나노와이어 구조가 개시되고, 상기 중심 막대형 부분은 텔루륨계 나노와이어 구조이고, 상기 8면체 구조는 텔루르화 납, 텔루르화 카드뮴, 및 텔루르화 비스무트 중 하나이다.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and light sensor

A thermoelectric conversion material including: a base material being a semiconductor comprising a base material element; a first additive element that is a different element from the base material element, has a spare d orbit or f orbit positioned on the inside of the outermost shell thereof, and forms a first additional level inside a forbidden band of the base material; and a second additive element that is different from both the base material element and the first additive element and forms a second additional level inside the forbidden band of the base material. The difference between the number of electrons in the outermost shell of the second additive element and the number of electrons in the outmost shell of at least one base material element is 1.

A scalable process for producing exfoliated defect-free, non-oxidised 2-dimensional materials in large quantities

미처리된 3차원 층상 물질을 박리하여 2차원 물질을 제조하기 위한 방법으로서, 상기 미처리된 3차원 층상 물질을 액체에서 혼합하여 혼합물을 제공하는 단계와, 상기 혼합물에 전단력을 가해 상기 3차원 층상 물질을 박리하고 용액 상태의 분산 및 박리된 2차원 물질을 제조하는 단계와; 상기 혼합물에 가해진 전단력을 제거하여, 상기 분산 박리된 2차원 물질이 용액에서 자유롭고 응집되지 않는 상태에 있도록 하는 단계를 포함하는 방법.

Method and apparatus for supplying hydrogen selenide mixed gas for solar cells

本发明的太阳能电池用硒化氢混合气体的供给方法具有供给工序，所述供给工序通过对从基本气体供给流路(L1)供给的惰性气体与从原料气体供给流路(L2)供给的100％硒化氢气体进行混合，来供给已调整为规定浓度的硒化氢混合气体，所述基本气体供给流路(L1)与所述原料气体供给流路(L2)上设置有将两者相互连通的旁通流路(L7)，在从所述原料气体供给流路(L2)中导出规定量的所述100％硒化氢气体之后，经由所述旁通流路(L7)，从所述原料气体供给流路(L2)中导出所述惰性气体，来配制出规定浓度的硒化氢混合气体，并且使所述原料气体供给流路(L2)中残留的硒化氢的体积浓度为10％以下。

The purposes of sulphur compound and selenium compound as the precursor of nano structural material

本文公开的主题提供用于制备纳米晶体的方法，其包括用于制备核‑壳纳米晶体的方法。本文公开的主题还提供作为纳米结构材料的前体的硫和硒化合物。本文公开的主题还提供具有特定粒度分布的纳米晶体。

Preparation method and application of rare earth selenide nano material

一种稀土硒化物纳米材料的制备方法及应用，其中方法包括：取稀土前驱体盐和硒粉，或者稀土前驱体盐、硒粉和无水乙醇加入反应容器中，室温下搅拌得到混合液；取油胺、油酸和辛胺，或者油酸和辛胺加入混合液中，继续室温搅拌，待溶液呈现悬浮状乳浊液之后，得到反应液；将反应容器密封后放至烘箱中保温使反应液进行反应，将反应容器冷却至室温并将其内的溶液转移至离心设备中，向离心设备中加入由无水乙醇和环己烷混合配制的清洗溶剂；将清洗得到的产物干燥得到粉末的稀土硒化物纳米材料。本发明通过调节反应条件，如时间/温度、稀土前驱体盐的种类、以及表面活性剂的种类和比例等制备条件，可合成不同种类的高质量稀土硒化物纳米材料。

Copper indium selenide nanoparticles and preparing method of the same

본원은 균일한 크기를 가지는 셀레늄화구리인듐(Copper Indium Selenide, CIS) 나노입자를 대량으로 생산할 수 있는 셀레늄화구리인듐 나노입자의 제조 방법 및 이에 의하여 제조되는 셀레늄화구리인듐 나노입자에 관한 것이다. The present invention relates to a method for preparing copper indium selenide nanoparticles capable of producing a large amount of copper indium selenide (CIS) nanoparticles having a uniform size and copper indium selenide nanoparticles produced thereby.

Metal/two-dimensional nanomaterial hybrid heating element and manufacturing method the same

본 발명은, 금속/이차원 나노소재 하이브리드 방열체 및 그 제조방법에 있어서, 기판과; 상기 기판의 상부에 형성되며, 코어(core)인 금속 및 상기 금속의 외벽을 쉘(shell) 형태로 둘러싸는 이차원 나노소재로 이루어진 하이브리드 입자층을 포함하는 것을 기술적 요지로 한다. 이에 의해 높은 산화도 특성을 가지는 비귀금속계 금속의 외벽에 열전도도가 우수한 이차원 나노소재를 합성하여, 공기로부터 금속이 산화되는 것을 방지함과 동시에 열전도도를 증가시키는 효과를 얻을 수 있다. 또한 마이크로파와 같은 고 에너지 광 흡수가 뛰어난 이차원 나노소재에 의해 급속 대기소성이 가능하며, 급속 소성에 의해 금속의 산화를 최소화하고 공정시간을 단축하는 효과를 얻을 수 있다. The present invention, a metal / two-dimensional nano-material hybrid heat sink and a method for manufacturing the same, the substrate; It is formed on the upper portion of the substrate, the technical core to include a hybrid particle layer made of a metal (core) and the outer wall of the metal in a shell (shell) two-dimensional nano-material. As a result, a two-dimensional nanomaterial having excellent thermal conductivity is synthesized on the outer wall of a non-precious metal-based metal having a high oxidation property, thereby preventing metal from being oxidized from air and at the same time increasing the thermal conductivity. In addition, rapid atmospheric firing is possible by a two-dimensional nanomaterial having excellent high energy light absorption such as microwave, and rapid firing can minimize metal oxidation and shorten the processing time.

Process for the production of gaseous chemical compounds in controllable quantities, processes for the application of these compounds and devices for carrying out these processes

Laminate structure and method for manufacturing same, and semiconductor device

Semiconductor nanocrystal particle, method for preparing same, and device including same

A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.