12-09-2013 дата публикации
Номер: US20130237011A1
Автор:
Bae Byeong-Soo,
Choi Tae-Young,
HWANG Young-Hwan,
JEON Jun-Hyuck,
JEONG Yeon-Taek,
Jo Kang-Moon,
JUNG Seung-Ho,
KIM Bo-Sung,
KIM DOO-NA,
LEE Byung-Ju,
Lee Doo-Hyoung,
YANG Chan-Woo
Принадлежит:
A method of manufacturing a thin-film transistor substrate includes: applying a composition on a substrate to form a thin-film on the substrate, heating the thin-film, and patterning the thin-film to form an oxide semiconductor pattern. The composition includes a metal nitrate and water. The potential of hydrogen (pH) of the composition is about 1 to about 4. 1. A composition for an oxide semiconductor , comprising:a metal nitrate; andwater,wherein the potential of hydrogen (pH) of the composition is about 1 to about 4.2. The composition of claim 1 , wherein the metal nitrate comprises a hydrate or an anhydride.3. The composition of claim 2 , wherein the metal nitrate comprises at least two different metal nitrates.4. The composition of claim 2 , wherein the metal nitrate comprises at least one nitrate of a metal selected from the group consisting of Li claim 2 , Na claim 2 , K claim 2 , Rb claim 2 , Cs claim 2 , Be claim 2 , Mg claim 2 , Ca claim 2 , Sr claim 2 , Ba claim 2 , Ti claim 2 , Zr claim 2 , Hf claim 2 , V claim 2 , Y claim 2 , Nb claim 2 , Ta claim 2 , Cr claim 2 , Mo claim 2 , W claim 2 , Mn claim 2 , Tc claim 2 , Re claim 2 , Fe claim 2 , Ru claim 2 , Os claim 2 , Co claim 2 , Rh claim 2 , Ir claim 2 , Ni claim 2 , Pd claim 2 , Pt claim 2 , Cu claim 2 , Ag claim 2 , Au claim 2 , Cd claim 2 , Hg claim 2 , B claim 2 , Zn claim 2 , Al claim 2 , Ga claim 2 , In claim 2 , Tl claim 2 , Si claim 2 , Ge claim 2 , Sn claim 2 , Pb claim 2 , P claim 2 , As claim 2 , Sb claim 2 , Bi claim 2 , and La.5. The composition of claim 2 , wherein the metal nitrate comprises at least one selected from the group consisting of aluminum nitrate hydrate claim 2 , indium nitrate hydrate claim 2 , zinc nitrate 6-hydrate claim 2 , zinc nitrate hydrate claim 2 , yttrium nitrate hydrate claim 2 , barium nitrate hydrate claim 2 , lanthanum nitrate hydrate claim 2 , strontium nitrate hydrate claim 2 , indium nitrate anhydride claim 2 , aluminum nitrate anhydride claim 2 , and zinc ...
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