СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО, ФОРМИРУЮЩЕЕ ЦВЕТНОЙ И БЕЛЫЙ СВЕТ

... 1. Светоизлучающее устройство для формирования цветного и белого света, содержащее: ! по меньшей мере, один источник (1, 4) света, испускающий голубой или ультрафиолетовый свет, ! блок (2, 5) преобразования цвета для преобразования упомянутого голубого или ультрафиолетового света в видимый свет, содержащий, по меньшей мере, две секции (2a, 2b, 2c, 6a, 6b, 6c, 6d), по меньшей мере, одна секция (2c, 6d) из которых является прозрачной или полупрозрачной секцией преобразования цвета, упомянутый блок (2, 5) преобразования цвета выполнен с возможностью попеременного освещения упомянутых, по меньшей мере, двух секций (2a, 2b, 2c, 6a, 6b, 6c, 6d) упомянутым голубым или ультрафиолетовым светом, упомянутая, по меньшей мере, одна секция преобразования цвета содержит прозрачный люминесцентный материал, при этом упомянутый прозрачный люминесцентный материал является люминесцентным органическим красителем в полимерной матрице или кристаллическим неорганическим люминесцентным материалом. ! 2. Светоизлучающее ...

Manufacturing phosphor, comprises mixing starting materials comprising mixture of cationic component containing strontium, silicon, aluminum, europium and anionic component containing nitrogen and oxygen, and heating at reduced atmosphere

Manufacturing a phosphor, comprises: (a) mixing the starting materials comprising mixture of a cationic component containing 10-60 mole% strontium, 40-90 mole% silicon, more than 0-40 mole% aluminum and more than 0-40 mole% europium, and an anionic component containing 40-100 mole% nitrogen and 0-60 mole% oxygen; and (b) heating the starting materials to a temperature of at least 1200[deg] C under reduced atmosphere. The reaction products comprising phosphor are obtained at least after the step (b). The phosphor absorbs at least a part of an electromagnetic primary radiation in UV or blue region. Manufacturing a phosphor, comprises: (a) mixing the starting materials comprising a mixture of cationic component containing 10-60 mole% strontium, 40-90 mole% silicon, more than 0-40 mole% aluminum and more than 0-40 mole% europium, and an anionic component containing 40-100 mole% nitrogen and 0-60 mole% oxygen; and (b) heating the starting materials to a temperature of at least 1200[deg] C under ...

LICHTEMITTIERENDES BAUELEMENT MIT EINEM EU(II)-AKTIVIERTEN LEUCHTSTOFF

Ladungskompensierte Nitridleuchtstoffe und deren Verwendung

Verwendung eines Leuchtstoffmaterials zum Emittieren von weißem Licht, umfassend: eine Lichtquelle, die Strahlung mit einem Peak bei 250 nm bis 550 nm emittiert, und ein Leuchtstoffmaterial, das mittels Strahlung mit der Lichtquelle verbunden ist, wobei das Leuchtstoffmaterial wenigstens eines von Ca1-a-bCeaEubAl1+aSi1-aN3, worin 0 < a ≤ 0,2, 0 ≤ b ≤ 0,2; Ca1-c-dCecEudAl1-c(Mg, Zn)cSiN3, worin 0 < c ≤ 0,2, 0 ≤ d ≤ 0,2; Ca1-2e-fCee(Li, Na)eEufAlSiN3, worin 0 < e ≤ 0,2, 0 ≤ f ≤ 0,2, e + f > 0; oder Ca1-g-h-iCeg(Li, Na)hEulAl1+g-hSi1-g+hN3, worin 0 ≤ g ≤ 0,2, 0 < h ≤ 0,4, 0 ≤ i ≤ 0,2, g + i > 0, umfasst.

Optoelektronisches Bauelement und Hintergrundbeleuchtung für ein Display

Die Erfindung betrifft ein optoelektronisches Bauelement (100) aufweisend einen Halbleiterchip (2) zur Erzeugung einer Primärstrahlung im blauen Spektralbereich, ein Konversionselement (4), das im Strahlengang des Halbleiterchips (2) angeordnet ist und zur Erzeugung einer Sekundärstrahlung aus der Primärstrahlung eingerichtet ist, wobei das Konversionselement (4) zumindest einen ersten Leuchtstoff (9) und einen zweiten Leuchtstoff (10) umfasst, wobei der erste Leuchtstoff (9) Sr(Sr1-xCax)Si2Al2N6:Eu2+ und/oder (Sr1-yCay)[LiAl3N4]:Eu2+ mit 0 ≤ x ≤ 1 und 0 ≤ y ≤ 1 ist, wobei eine aus dem Bauelement (100) austretende Gesamtstrahlung (G) weißes Mischlicht ist.

Method for manufacturing light-emitting device

A method for manufacturing a light-emitting device includes firstly, flip-chip mounting separate first and second light emitting elements 31,32 (such as LED chips) on a substrate 10. Secondly, bonding a light transmissive member 51,52 (for example, a silicon resin maxtrix with a wavelength conversion fluorescent material such as SiAlON or manganese-activated fluoride) to each light emitting element 31,32, so that a surface 51L,52L of one light transmissive member faces a surface of the other light transmissive member, separated by a gap. Thirdly, scraping at least one of the surfaces 51L,52L (for example, using a dry cutting blade 90, to remove projections from the surface). Fourthly, providing a light reflective covering (70, figure 3E) on the substrate 10, and the surfaces 51L,52L, before cutting the substrate and the covering at a location between the surfaces.

Nanoparticles

LIGHTING INSTALLATION WITH RADIATION SOURCE AND LUMINESZIERENDEM MATERIAL

GREEN LIGHT EMITTING PHOSPHOR

LICHTEMITTIERENDES ELEMENT WITH A FLUORESZENTEN SUBSTANCE

LIGHTING INSTALLATION WITH A MONOLITHIC CERAMIC COMPOUND LUMINESCENCE CONVERTER

PHOSPHOR MIXTURE FOR A GLOW LAMP AND GLOW LAMP, IN PARTICULAR HGNIEDERDRUCKENTLADUNGSLAMPE

PROCEDURE FOR THE PRODUCTION RARE-EARTHENDOWED OF AN ALKALINE-EARTH SILICON NITRIDE PHOSPHOR, IN THIS WAY PRODUCIBLE ONES OF RARE-EARTHENDOWED ALKALINE-EARTH SILICON NITRIDE PHOSPHOR AND RADIATION-EMITTING DEVICE WITH SUCH RARE-EARTHENDOWED ALKALINE-EARTH SILICON NITRIDE PHOSPHOR

LIGHT WITH ANIMAL END OF DEVICE WITH A POLYPHASE CERAMIC(S) MATERIAL ON SIALONBASIS

LIGHTING INSTALLATION WITH RADIATION SOURCE AND FLUORESCENT MATERIAL

FOTOLUMINESZENTES MATERIAL AND LIGHT EMITTING DIODE

SEMICONDUCTOR WHITE LIGHT SOURCE

LIGHT EMITTING DEVICE, PHOSPHOR AND METHOD FOR PREPARING PHOSPHOR

Method for producing beta-sialon fluorescent material

A method for producing β-sialon fluorescent material having excellent emission intensity is provided. The method for producing β-sialon fluorescent material includes providing a composition comprising silicon nitride that contains aluminium, an oxygen atom, and europium, heat treating the composition, and contacting the heat-treated composition with a basic substance.

NITRIDE PHOSPHOR AND METHOD FOR PREPARATION THEREOF, AND LIGHT EMITTING DEVICE

To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula L X M Y N((2/3)X+(4/3)Y):R or L X M Y O Z N((2/3)X+(4/3)Y-(2/3)Z):R (wherein L is at least one or more selected from the group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Px, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.

PHOSPHOR, METHOD FOR PRODUCING A PHOSPHOR AND USE OF A PHOSPHOR

An embodiment of the invention relates to a luminescent material, comprising an inorganic substance which includes in its composition at least the element D, the element A1, the element AX, the element SX and the element NX (D representing one, two or more elements from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb, A1 representing one, two or more elements from the group of divalent metals which are not included in D, SX representing one, two or more elements from the group of tetravalent metals, AX representing one, two or more elements from the group of trivalent metals, and NX representing one, two or more elements from the group consisting of O, N, S, C, C1, F) and has the same crystal structure such as Sr (SraCa1-a) Si2A12N6.

SIZE-TUNABLE NANOPARTICLE SYNTHESIS

The present disclosure relates to a method (1) for synthesizing nanoparticles with a predetermined size at high or full yield. The method comprises mixing (2) a first precursor material (6) comprising a first compound comprising a halide moiety and a metal or a metalloid, a second precursor material (7) comprising a second compound comprising a polyatomic nonmetal, and a solvent (8). The method further comprises heating (3) the mixture to colloidally form nanoparticles comprising the polyatomic nonmetal and the metal or metalloid. The halide moiety is selected such as to colloidally form the nanoparticles in a predetermined size range that is at least partially determined by this halide moiety.

LED-BASED ILLUMINATION MODULES WITH THIN COLOR CONVERTING LAYERS

An illumination module includes a plurality of Light Emitting Diodes (LEDs). The illumination module may include a reflective color converting element with a PTFE layer and a color converting layer fixed to the PTFE layer. The color converting layer includes phosphor particles embedded in a polymer matrix and has a thickness that is less than five times an average diameter of the phosphor particles. The illumination module may include a transmissive color converting element. The color converting elements may be produced by mixing a polymer binder with a solvent and phosphor particles to form a homogeneous suspension of the phosphor particles. The homogeneous suspension is applied to a surface to form an uncured color converting layer, which is heated to vaporize the solvent. The cured color converting layer includes the phosphor particles suspended in the polymer binder ...

Leuchtstoff und Verfahren zu dessen Herstellung

Wavelength conversion member and light-emitting device

Phosphor, production method thereof and light emitting instrument

The present invention aims at providing a blue-aimed phosphor powder which is more excellent in emission characteristic than the conventional rare-earth activated sialon phosphors and which is more excellent in durability than the conventional oxide phosphors. The solving means resides in: firing a starting material mixture in a nitrogen atmosphere at a temperature range between 1,500 DEG C inclusive and 2,200 DEG C inclusive, wherein the starting material mixture is a mixture of metallic compounds, and is capable of constituting a composition comprising M, A, Si, Al, O, and N (M is one kind or two or more kinds of element(s) selected from Mn, Ce, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb; and A is one kind or two or more kinds of element(s) selected from C, Si, Ge, Sn, B, Ga, In, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, Lu, Ti, Zr, Hf, Ta, and W) by firing; to obtain a phosphor which emits fluorescence having a peak at a wavelength within a range of 400nm to 700nm, by irradiation of an excitation source ...

Conversion led with high color rendition index

Light emitting apparatus and method for manufacturing thereof

Colored and white light generating lighting device

A lighting device for generating colored and white light. According to the invention the lighting device comprises at least one light source (1, 4) emitting blue or ultraviolet light and a color conversion unit (2, 5) for converting said blue or ultraviolet light into visible light comprising at least two sections (2a, 2b, 2c, 6a, 6b, 6c, 6d), at least one section (2c, 6d) of which being a transparent or translucent color converting section, said color conversion unit (2, 5) being arranged for alternately illuminating said at least two sections (2a, 2b, 2c, 6a, 6b, 6c, 6d) with said blue or ultraviolet light, said at least one color converting section containing luminescent material, wherein said luminescent material is a luminescent organic dye in a polymer matrix or a crystalline inorganic luminescent material.

The light-emitting particle, its identification method and light-emitting device including the same

White-light light-emitting diode and backlight module

Phosphor and light-emitting device

Provided is a phosphor comprising a europium-activated sialon crystal indicated by formula (1), that emits a green light by being excited by ultraviolet light-blue light, and includes carbon at a ratio of 1-5,000 ppm. Formula (Sr1-x, Eux)alphaSibetaAlgammaOdeltaNomega (1) (wherein, x is 0 Подробнее

Plastic light-conversion fluorescent granules and application thereof

The invention relates to plastic light-conversion fluorescent granules for replacing the traditional LED packaging process. A preparation method of the plastic light-conversion fluorescent granules comprises the following steps of: selecting polymer resin which is suitable for being prepared into an LED lamp; selecting a special method to treat fluorescent materials; successfully combining the polymer resin, an addition agent and the fluorescent materials together to prepare the plastic light-conversion fluorescent granules. The plastic light-conversion fluorescent granules avoid uneven dispersion and blackened products in a processing process, can be directly used for processing plastic lenses and lens parts in various LED lamps or outer shells of lamps and also can be used for processing plastic fittings of a luminous indicator. Because a piece processed by the plastic light-conversion fluorescent granules has a light conversion function, the piece is converted into white light or other ...

Oxycarbonitride phosphors and light emitting devices using the same

Disclosed herein is a novel family of oxycarbonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M-Al-Si-O-N-C-Ln and quintuplet system of M-Si-O-N-C-Ln (M = alkaline earth element, Ln = rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

Red phosphor, the method of manufacturing the red phosphor, white light source, illuminating device, and liquid crystal display device

Alpha-Sialon phosphor

Phosphor and light-emitting device

Method for preparing nitride phosphor by using oxides as raw materials, and nitride phosphor

For high reliability ceramic phosphor plate glass composition and ceramic phosphor plate using the same

산질화물계 형광체 및 이를 포함하는 발광장치

... 본 발명은 산질화물계 형광체 및 이를 포함하는 발광장치에 관한 것으로서, 본 발명의 일 측면은 모체 구성 원소로서 적어도 Ca, Ba, Si, O 및 N를 함유하며, 상기 모체에 부활제로 금속 원소를 고용시킨 형광체로서, 상기 금속 원소는 Mn, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Tb, Ho, Er, Tm 및 Yb으로 구성된 그룹으로부터 선택된 1종 이상이고, 상기 모체는 분말 X선 회절 패턴의 피크에 따른 결정 격자가 a = 7.076, b = 23.888, c = 4.827, α = γ = 90˚, β = 109.110˚인 단사정계 결정 구조를 갖되 상기 a, b, c, α, β 및 γ 값의 변화가 각각 5% 이하인 구조를 갖는 것을 특징으로 하는 산질화물계 형광체를 제공한다.

FLUORESCENT SUBSTANCE, PROCESS FOR PRODUCING THE SAME, AND LUMINESCENT DEVICE

-TYPE SIALON FLUORESCENT SUBSTANCE

GREEN-EMITTING LED

PHOSPHOR AND LIGHT-EMITTING DEVICE

COMPOSITION, QUANTUM DOT-POLYMER COMPOSITE, AND DISPALY DEVICE INCLUDING SAME

Li-CONTAINING α-SIALON FLUORESCENT PARTICLES, METHOD FOR PRODUCING SAME, ILLUMINATION DEVICE, AND IMAGE DISPLAY DEVICE

NITRIDE-BASED NANO-FUSED SPHERICAL BODY HAVING SINGLE OR MULTI CORE-SHELL STRUCTURE

The present invention relates to a nitride-based nano-fused spherical body having a core-shell structure capable of exhibiting quantum dot properties and, more specifically, to a nitride-based nano-fused spherical body having a single or multi core-shell structure, which is produced through a spheroidization process of shell raw materials and nano-crystallization of core raw materials by a plasma method, and to various uses thereof. COPYRIGHT KIPO 2017 (AA) Compound of In, Ga, and Al Nitride ...

넓은 색 역을 가진 LED 기반 장치

... 본 발명은 청색 광원, 녹색 광원, 광대역 스펙트럼 광 분포를 가진 적색 광을 제공하도록 구성되는 제1 적색 형광 물질을 포함하는 제1 적색 광원, 및 하나 이상의 적색 방출 선들을 포함하는 스펙트럼 광 분포를 가진 적색 광을 제공하도록 구성되는 제2 적색 형광 물질을 포함하는 제2 적색 광원을 포함하는 조명 유닛을 제공한다. 특히, 제1 적색 형광 물질은 (Mg,Ca,Sr)AlSiN3:Eu 및/또는 (Ba,Sr,Ca)2Si5-xAlxOxN8-x:Eu을 포함하고, 제2 적색 형광 물질은 K2SiF6:Mn을 포함한다.

LIGHT EMITTING DEVICE

Provided is a light emitting device having excellent color reproducing performance. The light emitting device has a light emitting element, a red phosphor composed of a nitride phosphor, and a green phosphor composed of halosilicate. The emission spectrum has a first peak wavelength of 440nm or more but not more than 470nm, a second peak wavelength of 510nm or more but not more than 550nm, and a third peak wavelength of 630nm or more but not more than 670nm. The lowest relative emission strength value between the second peak wavelength and the third peak wavelength is 80% of the lower value of either the relative emission intensity value at the second peak wavelength or the relative emission intensity at the third peak wavelength or is lower than 80% of such value. COPYRIGHT KIPO & WIPO 2010 ...

ENHANCED COLOR-PREFERENCE LIGHT SOURCES

Light-converting material

The present invention relates to a light-converting material which comprises a luminescent material with semiconductor nanoparticles (quantum materials), where the semiconductor nanoparticles are located on the surface of the luminescent material and the emission from the semiconductor nanoparticles is in the region of the emission from the luminescent material. The present invention furthermore relates to a process for the preparation of the light-converting material and to the use thereof in a light source. The present invention furthermore relates to a light-converting mixture, a light source, a lighting unit which contains the light-converting material according to the invention, and a process for the production thereof.

Liquid composition, quantum dot-containing film, optical film, luminescent display element panel, and luminescent display device

The present invention provides: a liquid composition containing quantum dots (A), which is suitable for the production of an optical film that has good fluorescence efficiency; a quantum dot-containing film which is obtained by drying and/or curing this liquid composition; an optical film for luminescent display elements, which is formed of this quantum dot-containing film; a luminescent display element panel which comprises this optical film; and a luminescent display device which is provided with this luminescent display element panel. According to the present invention, a liquid composition containing quantum dots (A) is configured to contain an ionic liquid (B) and a solvent (S) which contains a solvent (S1) that is a compound which has a cyclic skeleton, while containing a heteroatom other than a carbon atom and a hydrogen atom.

NITRIDE PHOSPHORS WITH INTERSTITIAL CATIONS FOR CHARGE BALANCE

Phosphors comprising a nitride-based composition represented by the chemical formula: M(x/v)(M'aM"b)Si(c-x)A1xNd :RE, wherein: M is a divalent or trivalent metal with valence v; M' is at least one divalent metal; M" is at least one trivalent metal; 2a + 3b + 4c = 3d; and RE is at least one element selected from the group consisting of Eu, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb. Furthermore, the nitride-based composition may have the general crystalline structure of M'aM"bSicNd, where A1 substitutes for Si within the crystalline structure and M is located within the crystalline structure substantially at the interstitial sites.

LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF SAME

A light emitting device (2) for emitting white light, provided with a light emitting element (7) for emitting near-ultraviolet light or visible light, is further equipped with a blue-green light fluorescent body (20) for absorbing the near-ultraviolet light or the visible light and emitting blue-green light, and a red fluorescent body (21) for absorbing the near-ultraviolet light or the visible light and emitting red light in order to emit white light. The light emitting device (2) can thereby be provided, whereby there is little scattering loss of light and two types of fluorescent bodies are used which emit light in a balanced manner through the visible light range.

PHOSPHOR, PRODUCTION METHOD FOR SAME, LIGHT-EMITTING DEVICE, IMAGE DISPLAY DEVICE, PIGMENT, AND ULTRAVIOLET ABSORBER

Provided is a phosphor having light emission characteristics different from those of conventional phosphors, which has high light emission intensity even when combined with LEDs of less than 450 nm, and which is chemically and thermally stable. This phosphor includes: crystals containing an element A, an element D, an element E, and an element X (where A is at least one element selected from Li, Mg, Ca, Sr, Ba, and La; D is at least one element selected from Si, Ge, Sn, Ti, Zr, and Hf; E is at least one element selected from B, Al, Ga, In, Sc, and Y; and X is at least one element selected from O, N, and F), and represented by Ba1Si4Al3N9; inorganic crystals having a crystal structure identical to that of crystals represented by Ba1Si4Al3N9; or an inorganic compound in the form of a solid solution of an element M (where M is at least one element selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb) in a solid solution of the crystals represented by Ba1Si4Al3N9 and the inorganic crystals ...

LIGHT EMITTING DEVICE

Disclosed is a light emitting device that has a broad color gamut and can expand a color reproduction range. The light emitting device comprises a red light emitting phosphor comprising one or more nitride phosphors selected from (I) and (II) and two or more green light emitting phosphors represented by formulae (III) and (IV). MwAlxSiyBzN((2/3)w+x+(4/3)y+z):Eu2+ (I) wherein M is selected from Mg, Ca, Sr, and Ba; 0.5 ≤ w ≤ 3; x = 1; 0.5 ≤ y ≤ 3; and 0 ≤ z ≤ 0.5, MpSiqN((2/3)p+(4/3)q):Eu2+ (II) wherein M is selected from Mg, Ca, Sr, and Ba; 1.5 ≤ p ≤ 2.5; and 4.5 ≤ q ≤ 5.5, MxMgSizOaXb:Eu2+ (III) wherein M is selected from Ca, Sr, Ba, Zn, and Mn; X represents F, Cl, Br, and I; 6.5 ≤ x < 8.0; 3.7 ≤ z ≤ 4.3; a = x+1 + 2z-b/2; and 1.0 ≤ b ≤ 1.9, and SicAldOfNg:Eu2+ (IV) wherein c + d = 6; 5.0 ≤ c < 6; 0 < d ≤ 1.0; 0.001 < f ≤ 1; and 7 ≤ g < 8.

PHOTOCHROMIC TOY

The present invention relates to a photochromic toy which is composed of: a light irradiation unit that is provided with a light source; and a toy main body that contains a photochromic compound. The light source has a peak wavelength within the range from 400 nm to 495 nm. The photochromic compound has a characteristic such that the integrated value (x) of absorbance within a wavelength range from a wavelength less than 400 nm, at said wavelength the absorbance being maximum, to 400 nm and the integrated value (y) of absorbance within a wavelength range from 400 nm to 700 nm satisfy the following formula (1). y/x ≥ 0.02 (1) ...

CONVERSION LED WITH HIGH COLOR RENDITION INDEX

A conversion LED with high color rendition index has a luminophore mixture comprising a first luminophore of the LuAGaG type and a second luminophore of the calsine type, allowing a very high color rendition index for warm white color temperatures.

FLUORESCENT MATERIAL, PROCESS FOR PRODUCING THE SAME, AND LUMINESCENT DEVICE

A blue fluorescent material having excellent durability and a high luminance, especially one emitting a high-luminance light by the action of electron rays. The fluorescent material comprises inorganic crystals having a crystal structure which is an AlN crystalline, AlN polycrystalline, or AlN solid-solution crystalline structure. It is characterized in that the inorganic crystals contain at least europium in solution and have an oxygen content of 0.4 mass% or lower and that the fluorescent material emits fluorescence derived from divalent europium ions upon irradiation with an excitation source. More preferably, the fluorescent material contains a given metallic element and silicon. Also provided are a process for producing the fluorescent material and an illuminator including the blue fluorescent material.

ALUMINATE LUMINESCENT SUBSTANCES

The invention relates to compounds of the general formula (I) SrLu2-xSiAl4O12:Cex (I), where x stands for a value from the range of 0.01 to 0.15, to a method for producing said luminescent substances, and to the use of said luminescent substances as conversion luminescent substances or in lamps.

FLUORESCENT SUBSTANCE AND METHOD FOR PREPARING SAME

Disclosed is a method for preparing a fluorescent substance, which is represented by the formula M1-zEuzSiaObNc (M=Sr1-x-yBaxCay, 0≤x≤0.5, 0≤y≤0.2, 0 Подробнее

Light emitting apparatus

An object of the present invention is to provide a light emitting apparatus that allows it to easily control the driving of LED and has high color rendering properties. The light emitting apparatus comprises the first light emitting device 108 a that has first peak emission wavelength in blue region and emits blue light, the fluorescent material 140 that is excited by the light from the first light emitting device 108 a and emits red light, the second light emitting device 108 b that has second peak emission wavelength which is longer than the first peak emission wavelength and is shorter than peak emission wavelength of the fluorescent material 140 , and the second light emitting device 108 b that emits green light of second peak emission wavelength which is longer than the first peak emission wavelength, so as to emit light generated by blending of blue light, green light and red light to the outside.

CARBONITRIDE AND CARBIDONITRIDE PHOSPHORS AND LIGHTING DEVICES USING THE SAME

Disclosed herein is a novel group of carbonitride and carbidonitride phosphors and light emitting devices which utilize these phosphors. In certain embodiments, the inventive phosphors are expressed as follows: Cam/2Si12-(m+n)xCxAlm+nN16-nOn:EU2+(1) M(II)m/2Si12-(m+n)xCxM(III)m+nN16-nOn-y/2Hy:A(2) Mm/vSi12-(m+n)xCxM(III)m+nN16-nOn-y/2Hy:A(3) Cam/2Si12-(m+n)+xAlm+nxN16-nxCxOn:Eu2+(4) M(II)m/2Si12-(m+n)+xM(III)m+nxN16-nxCxOn-y/2Hy:A(5) Mm/vSi12-(m+n)+xM(III)m+nxN16-nxCxOn-y/2Hy:A(6) wherein v is the valence number of M, 0m<5, 0n3, 0x<4, and 0y<1, M is at least one cation, M(II) is at least one divalent cation, M(III) is at least one trivalent cation, H is at least one monovalent anion, and A is a luminescence activator.

ELECTRONIC DEVICE INCLUDING QUANTUM DOTS

An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m2).

Method for manufacturing red phosphor

Provided is a process for producing a red phosphor, said process achieving enhanced productivity. Also provided are: a red phosphor having excellent luminescence characteristics; and a white light source, a lighting system, and a liquid crystal display device, using the red phosphor. This process comprises: mixing an A-containing compound, a nitrogen-free europium source, a silicon-containing compound, an aluminum-containing compound and a carbon-containing reducing agent so as to form a mixture wherein the atomic ratio among A, europium (Eu), silicon (Si), aluminum (Al) and carbon (C) is a value represented by compositional formula (1); firing the mixture; and pulverizing the fired mixture. (AmxEux)Aly(Si1zCz)90 nN[12+y2(nm)/3] (1) [wherein A is at least one element selected from among magnesium (Mg), calcium (Ca), strontium (Sr) and barium (Ba), and m, x, z and n satisfy the relationships: 3.

Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor Device

The present invention relates to a curable silicone composition comprising: (A) an organopolysiloxane having at least two alkenyl groups and at least one aryl group in a molecule, (B) an organopolysiloxane having at least two silicon atom-bonded hydrogen atoms in a molecule, (C) an organopolysiloxane having at least one aryl group in a molecule and containing a metal atom selected from the group consisting of V, Ta, Nb and Ce, and (D) a hydrosilylation-reaction catalyst. The present invention can provide the curable silicone composition, which does not develop a crack by thermal aging and further can form a cured material that exhibits less yellowing.

Phosphor and manufacturing method for the same, and light source

To provide a phosphor having an emission characteristic such that a peak wavelength of light emission is in a range from 580 to 680 nm, and having a high emission intensity, and having a flat excitation band with high efficiency for excitation light in a broad wavelength range from ultraviolet to visible light (wavelength range from 250 nm to 550 nm). For example, Ca3N2(2N), AlN(3N), Si3N4(3N), Eu2O3(3N) are prepared, and after weighing and mixing a predetermined amount of each raw material, raw materials are fired at 1500° C. for 6 hours, thus obtaining the phosphor including a product phase expressed by a composition formula CaAlSiN3:Eu and having an X-ray diffraction pattern satisfying a predetermined pattern.

Light emitting device and lighting fixture provided with the same

Provided is a light emitting device, comprising: a light emitting element including a light emission peak wavelength in a range of 440 nm or more and 470 nm or less; a first fluorescent material having a light emission peak wavelength in a range of 480 nm or more and 518 nm or less; a second fluorescent material having a light emission peak wavelength in a range of 510 nm or more and less than 590 nm and having an x value of the chromaticity coordinate in CIE1931 in a range of 0.27 or more and 0.40 or less; and a third fluorescent material having a light emission peak wavelength in a range of 590 nm or more and 670 nm or less. The light emitting device is capable of reducing the human eye fatigue and having a light emission spectrum with excellent visual work.

White light LED production method

The traditional production method of white light LED is adding YAG phospher on blue light chips which causes two-wavelength white light that is only suitable for indication usage. Moreover, the difficulty in controlling adequate amount of phosphor powder leads to inaccurate color of light. Another production method for three wavelength white light by UV ehip arousing R.G.B.-mixed phosphor powder is degenerated in its life and quality due to lack of high-efficiency UV LED chips and UV-typed encapsulating resin. The production method of white light LED of the present invention consists of packaging substrate, purple light LED chip and R.G.B.-mixed phosphor powder. With purple light produced by purple light LED chips to arouse phosphor powder on the surface, the three-wavelength (tri-color) white light formed by R.G.B. lights takes shape. The present invention is the best choice in producing high brightness and three-wavelength (tri-color) white light LED.

Light emitting diode lamp and light emitting device

A bullet type light emitting diode lamp or a chip-type light emitting diode lamp includes a semiconductor light emitting element, and a plurality of fluorescent materials that absorb part or whole of light emitted from the semiconductor light emitting element, and emit fluorescence at a wavelength different from that of the absorbed light. The fluorescent materials include a phosphor of a CaAlSiN3 crystalline phase.

LIGHT EMITTING DIODE

A light emitting apparatus, including: a substrate; a light emitting diode disposed on the substrate; and a lens covering the light emitting diode. The light emitting diode includes a light emitting diode chip; a first molding portion covering the light emitting diode chip; a second molding portion covering the first molding portion. The first molding portion includes one or more kinds of phosphors and the second molding portion contains no phosphors. The light emitting diode chip is covered by a first molding portion having a high index of refraction and a second molding portion having a low index of refraction and covering the first molding portion in order to reduce total reflection in the molding portions through reduction in difference in index of refraction between external air and the molding portion having a high index of refraction, thereby increasing the quantity of light.

Phosphor

A phosphor is disclosed. In an embodiment the phosphor includes an inorganic compound having at least one activator E and N and/or O in its empirical formula, wherein E is selected from the group consisting of Mn, Cr, Ni, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Yb, Tm, Li, Na, K, Rb, Cs and combinations thereof, and wherein the inorganic compound crystallizes in a crystal structure with the same atomic sequence as in K2Zn6O7.

Illumination device

Proposed is an illumination device (100), comprising a light source (110) such as an LED or a laser diode, a wavelength conversion medium (120) such as a phosphor, and a periodic antenna array (300) made of a highly polarisable material such as a metal. The light source emits primary wavelength light that at least partially is converted in secondary wavelength light by the wavelength conversion medium. The periodic antenna array is positioned in close proximity to the wavelength conversion medium and functions to enhance the efficiency of the absorption and/or emission processes in the wavelength conversion medium through the coupling of the incident primary wavelength light or the emitted secondary light to surface lattice resonances that arise from the diffractive coupling of localized surface plasmon polaritons in the individual antennas of the array. This is especially advantageous for forming low étendue illumination device suitable for use in projection systems, or for controlling ...

ILLUMINATING DEVICE

An illuminating device comprises one or more luminescent devices (1). The luminescent device comprises a semiconductor light emitting element (10) emitting a excitation light having an peak within a wavelength range from 350 nm to 430 nm, and a luminescent part (20) comprising a sealing member (22) and a phosphor (21) absorbing the light from the semiconductor light emitting element (10) and emitting a light with different emission spectrum. For the luminescent device (1), an excitation light contribution degree E, an index quantitatively representing what extent of a visible component of the excitation light is involved in color mixing of a combined light of the luminescent device (1), is 0.005 or less, and a mean color rendering index Ra is 70 or more.

PHOSPHOR COMPOSITION

A method is disclosed for forming a blended phosphor composition. The method includes the steps of firing precursor compositions that include europium and nitrides of at least calcium, strontium and aluminum, in a refractory metal crucible and in the presence of a gas that precludes the formation of nitride compositions between the nitride starting materials and the refractory metal that forms the crucible. The resulting compositions can include phosphors that convert frequencies in the blue portion of the visible spectrum into frequencies in the red portion of the visible spectrum.

Process for production of phosphors

The present invention relates to a process for the preparation of a europium-doped alkaline-earth metal siliconitride or silicooxynitride having increased emission efficiency. The present invention furthermore relates to europium-doped alkaline-earth metal siliconitrides or silicooxynitrides which are obtainable by the preparation process according to the invention, and to the use of the europium-doped alkaline-earth metal siliconitrides or silicooxynitrides according to the invention as conversion phosphors. The present invention furthermore also relates to a light-emitting device which comprises a europium-doped alkaline-earth metal siliconitride or silicooxynitride according to the invention.

Oxynitride-based phosphor

Disclosure relates to a phosphor formed by using oxynitride having a good durability and possibly emits diverse color of light from green to yellow when using a blue emitting diode or a ultraviolet emitting diode as an excitation source. The phosphor includes a host material represented by the general formula of (Ca1-xM1x)a(La1-yM2y)bSicNdOe (in which 0.5b/a7, 1.5c/(a+b)3.5, 1d/c1.8, 0.6e/(a+b)2, 0x0.5, and 0y0.5) and having a monoclinic crystalline structure, and at least one dissolved activator selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Tb, Ho, Er, Tm and Yb. M1 is at least one element selected from Ba, Mg, Sr, Mn and Zn, and M2 being at least one element selected from Y, Lu, Sc, Gd, Tb, Ce, Nd, Sm, Dy, Ho, Er, Tm, Yb, Al, Ga, Ge, Sn and In.

LUMINESCENCE CONVERSION MATERIAL AND FABRICATION METHOD THEREOF

A luminescence conversion material is provided. The luminescence conversion material includes: a hybrid luminescence conversion particle, a first cladding material covering the hybrid luminescence conversion particle, and a second cladding material formed on the first cladding material and covering the first cladding material. The hybrid luminescence conversion particle includes a matrix and a plurality of quantum dots uniformly dispersed in the matrix. The first cladding material includes silicon oxide. The ratio α (absorbance ratio α: A939/A1000-1150) of the absorbance at 939 cm−1(A939) to the absorbance peak at 1000-1150 cm−1(A1000-1150) in a FTIR spectrum of the first cladding material is less than or equal to 0.8.

LIGHT EMITTING DEVICE WITH IMPROVED WARM-WHITE COLOR POINT

A light emitting device is disclosed and includes an emission source configured to emit a primary blue light and a wavelength-converting element configured to convert the primary blue light to a secondary light, where the wavelength-converting element including a red phosphor material having a peak emission wavelength that is less than 620 nm and a green phosphor material having a peak emission wavelength that is greater than 530 nm. The device may have a correlated color temperature (CCT) in the range of 1600K-2500K, may exhibit a melanopic/photopic ratio less than 0.25 and/or may exhibit a radiometric power fraction of light having a wavelength below 530 nm below 0.1.

Illumination device

... [Object] To provide an illumination device that can efficiently obtain a desired spectral characteristic with a simple configuration. [Means for Settlement] The illumination device is provided with a light emitting part 11a that has at least: an LED element 15a having a blue wavelength range; and a blue-green phosphor 15b that has a peak wavelength in the range of 480 to 520 nm and a half bandwidth of 20 to 50 nm.

ILLUMINATION SYSTEM COMPRISING A CERAMIC LUMINESCENCE CONVERTER

COMPLEX OXYNITRIDE PHOSPHOR, LIGHT-EMITTING DEVICE USING SAME, IMAGE DISPLAY, ILLUMINATING DEVICE, PHOSPHOR-CONTAINING COMPOSITION AND COMPLEX OXYNITRIDE

蛍光体

FLUORESCENT SUBSTANCE, METHOD FOR PRODUCING THE SAME, AND LIGHT-EMITTING DIODE

PROBLEM TO BE SOLVED: To provide a fluorescent substance having improved stability to water and/or heat by forming a glass-coated layer on the surface of a particle; and to provide a method for producing the fluorescent substance and a light-emitting diode. SOLUTION: The fluorescent substance containing fluorescent substance particles excitable by light has a glass-coated layer on the surface of the fluorescent substance particle. The method for producing the fluorescent substance includes a step for preparing the fluorescent substance particles excitable by the light, and a step for forming the glass-coated layer on the surface of the prepared fluorescent substance particle. The step for forming the glass-coated layer comprises a step for mixing the fluorescent substance particles with a glass composition, a step for heat-treating the mixture of the fluorescent substance particles and the glass composition so that the glass composition may be melted and may surround the fluorescent substance ...

СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО

Светоизлучающее устройство содержит светоизлучающий элемент, красный люминофор, сформированный из нитридного люминофора, который излучает свет при возбуждении светом, излучаемым светоизлучающим элементом, зеленый люминофор, сформированный из галогенсиликата, который излучает свет при возбуждении светом, излучаемым светоизлучающим элементом, и люминофор АИГ (алюмоиттриевый гранат), который излучает свет при возбуждении светом, излучаемым светоизлучающим элементом. Предлагается светоизлучающее устройство, которое обладает высоким качеством цветопередачи. 6 з.п. ф-лы, 14 ил.

СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО

Светоизлучающее устройство согласно изобретению содержит светоизлучающий элемент, красный люминофор, сформированный из нитридного люминофора, и зеленый люминофор, сформированный из галогенсиликата, в спектре излучения которого имеется первый пик при длине волны от 440 нм до 470 нм, второй пик при длине волны от 510 нм до 550 нм и третий пик при длине волны от 630 нм до 670 нм, при этом минимальная относительная интенсивность светового излучения между второй пиковой длиной волны и третьей пиковой длиной волны составляет 80% или менее от меньшей из относительных интенсивностей излучения света при второй и третьей пиковой длине волны. Предлагается светоизлучающее устройство, которое обладает высоким качеством цветопередачи. 6 з.п. ф-лы, 17 ил.

ПОЛУПРОВОДНИКОВЫЙ ИСТОЧНИК БЕЛОГО СВЕТА

Изобретение относится к оптоэлектронике, а именно к конструкциям полупроводниковых источников излучения белого цвета. Техническим результатом изобретения является создание полупроводникового источника белого света, обладающего высокой оптической эффективностью и стабильностью параметров. Сущность изобретения заключается в том, что в полупроводниковом источнике белого света, включающем полупроводниковый излучающий кристалл на основе многокомпонентной Al-In-Ga-N системы, генерирующий свет в фиолетово-синей области спектра, и покрытие, содержащее люминофор, поглощающий часть излучаемого кристаллом света и испускающий свет в желтой области спектра. В качестве люминофора использован активированный двухвалентным европием оксонитридный α-сиалоновый материал. 2 з.п. ф-лы, 10 ил.

СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО С ПО МЕНЬШЕЙ МЕРЕ ОДНИМ КЕРАМИЧЕСКИМ СФЕРИЧЕСКИМ ПРЕОБРАЗУЮЩИМ МАТЕРИАЛОМ

... 1. Светоизлучающее устройство, содержащее по меньшей мере один источник (40) света и по меньшей мере один керамический сферический преобразующий цвет материал (10) со средним диаметром от ≥100 до ≤2500 мкм. ! 2. Светоизлучающее устройство по п.1, в котором среднее отклонение формы по меньшей мере одного керамического сферического преобразующего цвет материала (10) от идеальной сферической формы составляет ≤10%. ! 3. Светоизлучающее устройство по п.1 или 2, в котором по меньшей мере один керамический сферический преобразующий цвет материал (10) имеет плотность ≥95 и ≤100% теоретической плотности соответствующего монокристалла. ! 4. Светоизлучающее устройство по п.1, в котором диаметры сфер по меньшей мере одного керамического сферического преобразующего материала (10) подчиняются по существу логарифмически нормальному распределению с шириной s≤0,1. ! 5. Светоизлучающее устройство по п.1, в котором по меньшей мере один керамический сферический преобразующий цвет материал (10) имеет шероховатость ...

ЛЮМИНЕСЦЕНТНЫЕ ЧАСТИЦЫ С ЗАЩИТНЫМ СЛОЕМ И СПОСОБ ПОЛУЧЕНИЯ ЛЮМИНЕСЦЕНТНЫХ ЧАСТИЦ С ЗАЩИТНЫМ СЛОЕМ

ELEKTROLUMINESZENTE LICHTQUELLE

Gelber Leuchtstoff und Konversions-LED

Es wird ein Leuchtstoff angegeben. Der Leuchtstoff weist die allgemeine Summenformel ZXSiNO: E auf. Dabei gilt:- Z = Mg, Ca, Sr und/oder Ba;- X = Li, Na, K, Rb und/oder Cs und- E = Eu, Ce, Yb und/oder Mn.

Konversions-LED mit hoher Effizienz

Eine Konversions-LED weist eine Leuchtstoffmischung auf, mit einem ersten Leuchtstoff vom Typ LuAGaG und einem zweiten Leuchtstoff vom Typ Nitridosilikat. Damit wird eine sehr hohe Effizienz erzielt.

Verfahren zur Herstellung eines pulverförmigen Precursormaterials, pulverförmiges Precursormaterial und seine Verwendung

Es wird ein Verfahren zur Herstellung eines pulverförmigen Precursormaterials der allgemeinen Formel M1xM2y(Si,Al)12(O,N)16 oder M12-zM2zSi8Al4N16 mit den Verfahrensschritten A) Herstellen einer pulverförmigen Mischung von Edukten, B) Glühen der Mischung unter Schutzgasatmosphäre und anschließendes Mahlen, wobei im Verfahrensschritt A) als Edukt mindestens ein Nitrid mit einer spezifischen Oberfläche von mehr als 2 m2/g ausgewählt wird, angegeben. Weiterhin wird ein pulverförmiges Precursormaterial sowie seine Verwendung angegeben.

REGELN FÜR EFFIZIENTE LICHTQUELLEN MIT MITTELS LEUCHTSTOFF KONVERTIERTEN LEDS

Leuchtvorrichtung

Die Erfindung betrifft eine Leuchtvorrichtung, die umfasst: mindestens einen blauen Chip (11), mindestens einen roten Chip (12), und eine Lumineszenzschicht (13), die durch ein Gemisch von einem gelben Lumineszenzpulver, einem roten Lumineszenzpulver und einer transparenten Masse gebildet ist und einen Teil des Lichtes und erzeugt ein Licht absorbiert, dessen Wellenlänge gleich oder anders als die des absorbierten Lichts, wodurch die Beleuchtungsstärke und der Farbwiedergabeindex des Weißlichts erhöht wird.

Leuchtstoffpartikel mit einer Schutzschicht und Verfahren zur Herstellung der Leuchtstoffpartikel mit der Schutzschicht

Gegenstand der vorliegenden Erfindung ist ein Verfahren zur Herstellung von Leuchtstoffpartikeln eines Si-haltigen und/oder Al-haltigen Leuchtstoffs mit einer Schutzschicht umfassend die Verfahrensschritte: A) Behandeln des Si-haltigen und/oder Al-haltigen Leuchtstoffs mit einer Säurelösung, wobei der pH-Wert der Säurelösung innerhalb eines Bereichs von pH 3,5 bis 7 für einen Zeitraum von zumindest 1 h gehalten wird und wobei eine Si-haltige Schicht auf den Leuchtstoffpartikeln gebildet wird, die einen höheren Gehalt an Si aufweist auf der Oberfläche als die Leuchtstoffpartikel und/oder eine Alhaltige Schicht auf den Leuchtstoffpartikeln gebildet wird, die einen geringeren Gehalt an Al aufweist auf der Oberfläche als die Leuchtstoffpartikel B) Tempern der behandelten Leuchtstoffpartikel bei einer Temperatur von zumindest 100°C unter Erzeugung der Schutzschicht. Durch ein derartiges Verfahren können besonders einfach stabile Schutzschichten auf Leuchtstoffpartikeln erzeugt werden.

Fluoreszierende Substanz und Verfahren zum Bereitstellen derselben

Light emitting apparatus and method for manufacturing thereof

A light emitting apparatus includes a light emitting device emitting primary light and a wavelength conversion unit absorbing a part of the primary light to emit secondary light. The wavelength conversion unit includes a first wavelength conversion unit containing at least a nanocrystalline phosphor and a second wavelength conversion unit containing a rare-earth-activated phosphor or a transition-metal-element-activated phosphor. In the light emitting device, the first wavelength conversion unit and the second wavelength conversion unit are closely stacked in order.

Phosphor, production method thereof and light emitting instrument

A light emitting element includes a light-emitting source for emitting light at a wavelength of 330 to 500 nm and a constituent phosphor. The constituent phosphor includes a compound including M, A, Al, O, and N, where M is at least one kind of element selected from Mn, Ce, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb, and A is at least one kind of element selected from C, Si, Ge, Sn, B, Ga, In, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, Lu, Ti, Zr, Hf, Ta, and W.

Light emitting device and manufacturing method thereof

A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the following equation (1) and an average particle diameter of 12 μm or more. (M 1−x1 Eu x1 ) 3−y Si 13−z Al 3+z O 2+u N 21−w   (1) (In the equation ( 1 ), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x1, y, z, u, and w satisfy the following relationship. 0<x1<1, −0.1<y<0.3, −3<z≦1, −3<u−w≦1.5)

Light emitting device

A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.

Red light-emitting flourescent substance and light-emitting device employing the same

The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M 1-x EC x ) a M 1 b AlO c N d   (1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M 1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0<x<0.2, 0.55<a<0.80, 2.10<b<3.90, 0<c≦0.25 and 4<d<5, respectively. This substance emits luminescence having a peak in the wavelength range of 620 to 670 nm when excited by light of 250 to 500 nm.

Phosphor particle group and light emitting apparatus using the same

Provided is a phosphor particle group of divalent europium-activated oxynitride green light emitting phosphor particles each of which is a β-type SiAlON substantially represented by a general formula: EuaSibAlcOdNe, where 0.005≦a≦0.4, b+c=12, d+e=16, wherein 60% or more of the phosphor particle group is composed of the phosphor particles in which a value obtained by dividing a longer particle diameter by a shorter particle diameter is greater than 1.0 and not greater than 3.0. A high-efficiency and stable light emitting apparatus using a β-type SiAlON, which includes a light converter using the phosphor particle group, and a phosphor particle group therefor are also provided.

Green emitting material

The invention relates to an improved green emitting material of the form M I 3-x-y M II x Si 6-x Al x O 12 N 2 :Eu y , whereby M I is an earth alkali metal and M II is a rare earth metal or Lanthanum. This material can be made as a ceramic using a low temperature sintering step, resulting in a better and more uniform ceramic body.

Cerium and Europium Doped Phosphor Compositions and Light Emitting Devices Including the Same

Compounds of Formula I, which include both cerium and europium, may be useful as phosphors in solid state light emitting devices. Light emitting devices including such phosphors may emit warm white light.

(oxy) nitride phosphor, white light-emitting device including the (oxy) nitride phosphor, method of preparing phosphor, and nitride phosphor prepared by the method

Provided is an (oxy)nitride phosphor, which is a compound represented by Formula 1 below: {M( 1-x) Eu x } a Si b O c N d   <Formula 1> wherein, M is an alkaline earth metal; and 0<x<1, 1.8<a<2.2, 4.5<b<5.5, 0≦c<8, 0<d≦8, and 0<c+d≦8. The (oxy)nitride phosphor produces red light suitable for use in UV-LED and blue-LED type white light-emitting devices and achieves good efficiency.

Phosphor and led light emitting device using the same

An LED light emitting device is provided that has high color rendering properties and is excellent color uniformity and, at the same time, can realize even luminescence unattainable by conventional techniques. A phosphor having a composition represented by formula: (Sr 2-X-Y-Z-ω Ba X Mg Y Mn Z Eu ω )SiO 4 wherein x, y, z, and u are respectively coefficients satisfying 0.1<x<1, 0<y<0.5, 0<z<0.1, y>z, and 0.01<ω<0.2. is provided. The phosphor is used in combination with ultraviolet and blue light emitting diodes having a luminescence peak wavelength of 360 to 470 nm to form an LED light emitting device.

Red nitride phosphors

Provided according to embodiments of the invention are phosphor compositions that include Ca 1-x-y Sr x Eu y AlSiN 3 , wherein x is in a range of 0.50 to 0.99 and y is less than 0.013. Also provided according to embodiments of the invention are phosphor compositions that include Ca 1-x-y Sr x Eu y AlSiN 3 , wherein x is in a range of 0.70 to 0.99 and y is in a range of 0.001 and 0.025. Also provided are methods of making phosphors and light emitting devices that include a phosphor composition according to an embodiment of the invention.

Light-emitting device

Disclosed is a light-emitting device that exhibits good color rendering and highly efficiently emits white light in an incandescent bulb color range. The semiconductor light-emitting device ( 1 ) of the present invention includes: a semiconductor light-emitting element ( 2 ) that emits blue light; a green phosphor ( 14 ) that absorbs the blue light and emits green light; and an orange phosphor ( 13 ) that absorbs the blue light and emits orange light. The orange phosphor ( 13 ) produces an emission spectrum having a peak at a wavelength of equal to or greater than 590 nm but equal to or less than 630 nm and having a full width at half maximum of 130 nm or greater at the peak, the full width at half maximum of the emission spectrum of the orange phosphor ( 13 ) being broader than a full width at half maximum of an emission spectrum of the green phosphor ( 14 ). The orange phosphor ( 13 ) exhibits an absorptance having a peak wavelength of 420 nm or greater. ABS(530) and ABS(MAX) satisfy a relation, ABS(530)/ABS(MAX)<0.60, where ABS(MAX) is an absorptance of the orange phosphor ( 13 ) at the peak wavelength thereof, and ABS(530) is an absorptance of the orange phosphor ( 13 ) at a wavelength of 530 nm.

Luminescent particles, methods and light emitting devices including the same

A luminescent particle includes an interior portion of the luminescent particle comprising a luminescent compound that reacts with atmospherically present components and a passivating layer on an outer surface of the luminescent particle that is operable to inhibit the reaction between the luminescent compound and the atmospherically present components.

White light emitting lamp and white led lighting apparatus including the same

An object is to provide a white light emitting lamp 1 comprising: a semiconductor light emitting element 2 which is placed on a board 3 and emits ultraviolet light or blue light; and a light emitting portion that is formed so as to cover a light emitting surface of the semiconductor light emitting element 2 , the light emitting portion containing a blue phosphor B, a green phosphor G, a red phosphor R and a deep red phosphor DR that are excited by the light emitted from the semiconductor light emitting element 2 to respectively emit blue light, green light, red light and a deep red light, the white light emitting lamp 1 emitting white light by mixing light emission colors from the blue phosphor B, the green phosphor G, the red phosphor R and a deep red phosphor DR with one another, wherein the deep red phosphor DR has a main emission peak in a longer wavelength region than a main emission peak of the red phosphor, the red phosphor R comprises at least one component selected from: a europium-activated SiAlON phosphor and a europium-activated CASN phosphor each having a predetermined composition, while the deep red phosphor DR comprises a manganese-activated magnesium florogermanate phosphor having a predetermined composition. According to the above white light emitting lamp, when the BGR phosphor is used in combination with the semiconductor element such as an LED or the like, and a deep red phosphor DR having a predetermined composition is further added in addition to the red phosphor R, so that luminance characteristics can be improved, whereby there can be provided a white light emitting lamp excellent in both high luminance and high color rendering properties.

Semiconductor light-emitting device, semiconductor light-emitting system and illumination fixture

The present invention provides a semiconductor light-emitting device that emits light with a specific low correlated color temperature and with a high Ra, and a semiconductor light-emitting system provided with the semiconductor light-emitting device. This object is attained by the semiconductor light-emitting device having the below-described configuration. A semiconductor light-emitting device includes a LED chip as a semiconductor light-emitting element, and a phosphor emitting light using the LED chip as an excitation source, and emits light with a correlated color temperature equal to or higher than 1600 K and lower than 2400 K. The phosphor includes at least a green phosphor and a red phosphor. In the spectrum of light emitted from the semiconductor light-emitting device, the value of the peak intensity of the light emitted by the LED chip is less than 60% of the maximum peak intensity of the light emitted by the phosphor.

Highly reliable photoluminescent materials having a thick and uniform titanium dioxide coating

Described herein are coated photoluminescent materials and methods for preparing such coated photoluminescent materials. More particularly, provided herein are phosphors coated with titanium dioxide, methods for preparing phosphors coated with titanium dioxide, and solid-state light emitting devices which include phosphors coated with titanium dioxide.

Oxynitride-based phosphor and light emitting device including the same

There are provided an oxynitride-based phosphor and a light emitting device including the same, the oxynitride-based phosphor containing at least calcium (Ca), barium (Ba), silicon (Si), oxygen (O), and nitrogen (N) as host material components in a host material and having a rare-earth element dissolved in the host material as an activator, wherein the rare-earth element is at least one from a group consisting of manganese (Mn), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), dysprosium (Dy), terbium (Tb), holmium (Ho), erbium (Er), thulium (Tm), and ytterbium (Yb), and the host material has a monoclinic crystal structure in which a crystal lattice according to a peak of an X-ray powder diffraction pattern has values of a=7.076, b=23.888, c=4.827, α=y=90°, and β=109.110°.

Oxynitride luminescent material, preparation method thereof and illumination light source made from such material

A nitrogen oxide luminescence material, with chemical formula: M 1−y X 4−x Z 1+x O x N 7−x x: R y , in which M represents one or several alkali, alkaline earth, rare earth and transition metals. X represents Si with one or several of Si, Ge, B and Al. Z represents Al with one or several of Al, Ga, In. R represents one or several of luminescence center elements Eu, Ce, Tb, Yb, Sm, Pr and Dy. In the formula, 0≦x<0.5, 0<y<1.0. The luminescence material can be excited by ultraviolett, near ultraviolet or blue light, and emits yellow or red light with wavelength between 500-750 nm. With the ultraviolet, near ultraviolet or blue lights, and other types of luminescence materials, such as green fluorescent powder, a new white LED can be obtained. The luminescence material has a wider excitation spectrum range, and is efficient and stable. Preparation is simple, easy to mass-produce and pollution-free.

RED FLUORESCENT MATERIAL, METHOD FOR PRODUCING RED FLUORESCENT MATERIAL, WHITE LIGHT SOURCE, ILLUMINATING DEVICE, AND LIQUID CRYSTAL DISPLAY

[Problems to Be Solved] 1. A red fluorescent material containing an element A , europium (Eu) , silicon (Si) , carbon (C) , oxygen (O) , and nitrogen (N) , at an atomic ratio of the following composition formula (1):{'br': None, 'i': 'A', 'sub': (m-x)', 'x', '(9-y)', 'y', 'n', '[12-2 (n-m)/3 ], '[Eu][SiC]ON'}wherein the element A is an group 2 element including at least calcium (Ca) and strontium (Sr); andm, x, y, and n satisfy 3 Подробнее

Carbidonitride phosphors and LED lighting devices using the same

A red phosphor is provided. Also provided is a lighting apparatus containing a red phosphor.

White-Light LED Red Phosphor and Method of Manufacturing the Same

A white-light LED red phosphor and method of manufacturing the same are provided. The luminescent materials are represented by the general formula: Ca 1-y-m-e-r Y y M m X x-p P p Z z N n :Eu e , R f , wherein M is at least one selected from Sr, Ba, Sc, Li, Na and K; X is at least one selected from B, Al and Ga, and Al must be contained; Z is at least one selected from Si, V and Nb, and Si must be contained; R is at least one selected from Dy, Er, Tm and Lu, and Dy must be contained; 0.001≦y≦0.2, 0.001≦m≦0.2, 0.5≦x,z≦1.5, 0.001≦p≦0.1, 2≦n≦4, 0.001≦e≦0.2 and 0.001≦r≦0.1. The phosphor according to the present invention has features such as good chemical stability, high luminous efficiency, and good anti-luminous attenuation performance, etc.

Light-emitting device

Disclosed is a light-emitting device ( 1 ) including a light-emitting element ( 2 ) emitting primary light, and a light converter ( 3 ) absorbing a part of the primary light emitted from the light-emitting element ( 2 ) and emitting secondary light having a longer wavelength than the primary light. The light converter ( 3 ) contains a green light-emitting phosphor ( 4 ) and a red light-emitting phosphor ( 5 ). The green light-emitting phosphor ( 4 ) is composed of at least one phosphor selected from a divalent europium-activated oxynitride phosphor substantially represented by the following formula: Eu a Si b Al c O d N e and a divalent europium-activated silicate phosphor substantially represented by the following formula: 2(Ba 1-f-g MI f Eu g )O.SiO 2 , while the red light-emitting phosphor ( 5 ) is composed of at least one phosphor selected from tetravalent manganese-activated fluoro-tetravalent metalate phosphors substantially represented by the following formulae: MII 2 (MIII 1-h Mn h )F 6 and/or MIV(MIII 1-h Mn h )F 6 . Consequently, the light-emitting device ( 1 ) has excellent color gamut (NTSC ratio).

Luminescent material

According to one embodiment, the luminescent material emits light having an luminescence peak within a wavelength range of 550 to 590 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material has a composition represented by the following formula 1. (Sr 1-x Eu x ) a Si b AlO c N d   formula 1 wherein x, a, b, c and d satisfy following condition: 0<x≦0.16, 0.50≦a≦0.70, 2.0≦b≦2.5 0.45≦c≦1.2, 3.5≦d≦4.5, and 3.6≦d/c≦8.0.

Luminescent material

According to one embodiment, the luminescent material exhibits a luminescence peak in a wavelength ranging from 500 to 600 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The luminescent material has a composition represented by Formula 1 below: (M 1-x Ce x ) 2y Al z Si 10-z O u N w   Formula 1 wherein M represents Sr and a part of Sr may be substituted by at least one selected from Ba, Ca, and Mg; x, y, z, u, and w satisfy following conditions: 0<x≦1, 0.8≦y≦1.1, 2≦z≦3.5, u≦1 1.8≦z−u, and 13≦u+w≦15.

Phosphors and method for producing thereof

The present embodiments provide a europium-activated oxynitride phosphor and a production method thereof. This phosphor emits red luminescence having a peak at 630 nm or longer and can be produced by use of inexpensive oxides as raw materials containing alkaline earth metals such as strontium. The oxynitride phosphor is activated by a divalent europium and represented by the formula (1): (M 1-x Eu x )Al a Si b O c N d C e   (1). In the formula, M is an alkaline earth metal, and x, a, b, c, d and e are numbers satisfying the conditions of 0<x<0.2, 1.3≦a≦1.8, 3.5≦b≦4, 0.1≦c≦0.3, 6.7≦d≦7.2 and 0.01≦3≦0.1, respectively.

Fluorescent substance and method for preparing same

Disclosed is a method for preparing a fluorescent substance, which is represented by the formula M 1-z Eu z Si a O b N c (M=Sr 1-x-y Ba x Ca y , 0 x 0.5, 0 y 0.2, 0<z 0.3, 2 a 2.5, 1.5 b 2, and 2 c 2.5), and the present invention provides the method for preparing a nitride-based fluorescent substance comprising the following steps: a preliminary firing step further comprising a first firing step of creating a first firing product by mixing and firing a first precursor group including an M precursor and a first silicon precursor, and a second firing step of creating a second firing product by mixing and firing a second precursor group including an Eu precursor and a second silicon precursor; and a secondary firing step of mixing and firing the first firing product and the second firing product.

Semiconductor light-emitting device, exhibit-irradiating illumination device, meat-irradiating illumination device, vegetable-irradiating illumination device, fresh fish-irradiating illumination device, general-purpose illumination device, and semiconductor light-emitting system

The present invention provides a semiconductor light-emitting device which emits light with high chroma, and an exhibit-irradiating illumination device, a meat-irradiating illumination device, a vegetable-irradiating illumination device, a fresh fish-irradiating illumination device, a general-purpose illumination device, and a semiconductor light-emitting system which include the semiconductor light-emitting device. A semiconductor light-emitting device 1 comprises an LED chip 10 as a semiconductor light-emitting element and a phosphor 20 which uses the LED chip 10 as an excitation source to emit light. The phosphor contains at least a green phosphor and a red phosphor, and a value of intensity of light with a wavelength of 660 nm in a spectrum of beam-normalized light emitted from the semiconductor light-emitting device 1 is 170% or more and 300% or less of a value of intensity of light with a wavelength of 660 nm in a spectrum of beam-normalized reference light for color rendering evaluation.

White emitting light source and luminescent material

The invention relates to a white emitting light source with an improved luminescent material of the formula (AEN2/3)*b(MN)*c(SiN4/3)*d1CeO3/2*d2 EuO*xSiO2*yAlO3/2 wherein AE is an alkaline earth metal chosen of the group of Ca, Mg, Sr and Ba or mixtures thereof and M is a trivalent element chosen of the group of Al, B, Ga, Sc with d1>10*d2. In combination with a UV to blue light generating device this material leads to an improved light quality and stability, especially an improved temperature stability for a wide range of applications.

METHOD OF PRODUCING NITRIDE FLUORESCENT MATERIAL

A method of producing a nitride fluorescent material having relatively high light emission intensity is provided. The method of producing a nitride fluorescent material includes preparing a calcined product having a composition containing at least one first element selected from the group consisting of Ba, Sr, Ca, and Mg, at least one second element selected from the group consisting of Eu, Ce, Tb, and Mn, and Si and N, and bringing the calcined product into contact with a fluorine-containing substance at a temperature in a range of −20° C. or higher and lower than 150° C. 1. A method of producing a nitride fluorescent material , comprising:preparing a calcined product having a composition that contains at least one first element selected from the group consisting of Ba, Sr, Ca, and Mg, at least one second element selected from the group consisting of Eu, Ce, Tb, and Mn, and Si and N, andbringing the calcined product into contact with a fluorine-containing substance at a temperature in a range of −20° C. or higher and lower than 150° C.2. The method of producing a nitride fluorescent material according to claim 1 , wherein the at least one first element includes Ba.3. The method of producing a nitride fluorescent material according to claim 1 , wherein the temperature at which the calcined product is brought into contact with the fluorine-containing substance is at a temperature in a range of 0° C. or higher and lower than 140° C.4. The method of producing a nitride fluorescent material according to claim 1 , wherein the fluorine content in the nitride fluorescent material is in a range of 1% by mass or more and 10% by mass or less.5. The method of producing a nitride fluorescent material according to claim 1 , wherein the calcined product has a composition represented by the following formula (I):{'br': None, 'sub': 1-y', 'y', '2', '5', '8, '(M1M2)SiN\u2003\u2003(I)'}wherein M1 represents at least one element selected from the group consisting of Ba, Sr, Ca, and Mg ...

Beta-sialon phosphor and method for producing the same, and light-emitting member and light emitting device

Provided is a β-sialon phosphor having a β-sialon as a host crystal and containing Eu as a luminescent center, wherein when chemical states of Eu are classified into three states: Eu 2+ , Eu 3+ and an intermediate state thereof (hereinafter, referred to as Eu m ), a ratio of them present in the β-sialon phosphor satisfies the relationships: 0.1<Eu m /(Eu 2+ +Eu 3+ +Eu m )<0.4 and Eu 2+ /(Eu 2+ +Eu 3+ )>0.7.

METHOD FOR PRODUCING BETA-SIALON FLUORESCENT MATERIAL

Provided is a method for producing a β-sialon fluorescent material, comprising preparing a composition containing a silicon nitride that contains aluminium, oxygen, and europium; heat-treating the composition at a temperature in a range of 1300° C. or more and 1600° C. or less to obtain a heat-treated product; subjecting the heat-treated product to a temperature-decrease of from the heat treatment temperature to 1000° C. as a first temperature-decrease step; and subjecting the heat-treated product to a temperature-decrease of from 1000° C. to 400° C. as a second temperature-decrease step. The first temperature-decrease step has a temperature-decrease rate in a range of 1.5° C./min or more and 200° C./min or less, and the second temperature-decrease step has a temperature-decrease rate in a range of 1° C./min or more and 200° C./min or less 1. A method for producing a β-sialon fluorescent material , comprising:preparing a composition containing a silicon nitride that contains aluminium, oxygen, and europium;heat-treating the composition at a temperature in a range of 1300° C. or more and 1600° C. or less to obtain a heat-treated product;subjecting the heat-treated product to a temperature decrease from the temperature of the heat-treating to 1000° C. as a first temperature-decrease step; andsubjecting the heat-treated product to a temperature decrease from 1000° C. to 400° C. as a second temperature-decrease step,wherein the first temperature-decrease step has a temperature-decrease rate in a range of 1.5° C./min or more and 200° C./min or less, and the second temperature-decrease step has a temperature-decrease rate in a range of 1° C./min or more and 200° C./min or less.2. The method for producing a β-sialon fluorescent material according to claim 1 , wherein the first temperature-decrease step has a temperature-decrease rate in a range of 2° C./min or more and 200° C./min or less.3. The method for producing a β-sialon fluorescent material according to claim 1 , ...

LIGHTING APPARATUS

A LED device includes LED chips mounted on a substrate, a first fluorescent layer, a second fluorescent layer and a package housing. The LED chips emit a blue light. The first fluorescent layer has a first side facing to the LED chips for converting the blue light to a red light. The second fluorescent layer has a first side attached to a second side of the first fluorescent layer for converting the blue light to a red light emitted from a second side of the second fluorescent layer. The package housing holds the substrate and the first fluorescent layer. 1. A lighting apparatus , comprising:a LED device comprising a LED module comprising multiple LED chips mounted on a first terminal area and a second terminal area, the first terminal area being mounted with more LED chips than and the second terminal area, a first fluorescent layer with a first side facing to the LED module, and a package housing for holding a substrate and the first fluorescent layer; anda driver for supplying a driving current to the first terminal area and the second terminal area.2. The lighting apparatus of claim 1 , wherein the multiple LED chips emit a blue light claim 1 , the first terminal area and the second terminal area are provided for respectively connected to a positive terminal and a negative terminal of a power source claim 1 , there are wires electrically connected the LED chips on the first terminal area and the second terminal area.3. The lighting apparatus of claim 1 , wherein the first fluorescent layer comprises red phosphor material contained in first silicone part claim 1 , a second fluorescent layer upon the first fluorescent layer comprises green phosphor material contained in a second silicone part claim 1 , and wherein a part of the green light excites the red phosphor if the green light hits the red phosphor.4. The lighting apparatus of claim 3 , wherein a first volume ratio of the red phosphor to the first silicone part is larger than a second volume ratio of the ...

Lighting device

A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; −3.5≤u≤4; 3.5≤v≤4; (−0.2) w≤0.2 and 0≤m<0.875 v and/or v≥l>0.125 v.

FILM, ILLUMINATION DEVICE, PROJECTOR COLOR WHEEL AND METHOD OF MANUFACTURING A FILM

A film for changing a wavelength of light, including: a nano-porous membrane including a plurality of pores each having a first opening at a first surface of the nano-porous membrane and each extending in an extension direction towards a second surface of the nano-porous membrane opposite to the first surface of the nano-porous membrane, wherein the plurality of pores is arranged according to a predetermined pattern; a plurality of first quantum dots of a first quantum dot type, provided in the plurality of pores; and a plurality of second quantum dots of a second quantum dot type, provided in the plurality of pores. 1. A film for changing a wavelength of light , comprising:a nano-porous membrane including a plurality of pores each having a first opening at a first surface of the nano-porous membrane and each extending in an extension direction towards a second surface of the nano-porous membrane opposite to the first surface of the nano-porous membrane, wherein the plurality of pores is arranged according to a predetermined pattern;a plurality of first quantum dots of a first quantum dot type, provided in the plurality of pores, the plurality of first quantum dots being configured to emit light according to a first emission profile with at least a first emission peak at a first emission wavelength when light of a predetermined wavelength incidents;a plurality of second quantum dots of a second quantum dot type, provided in the plurality of pores, the plurality of second quantum dots being configured to emit light according to a second emission profile with at least a second emission peak at a second emission wavelength when light of the predetermined wavelength incidents; andwherein the first emission wavelength is larger than the second emission wavelength.2. The film according to claim 1 , wherein each of the plurality of pores has a second opening at the second surface of the nano-porous membrane by extending the respective pore in the extension direction to the ...

QUANTUM DOT-CONTAINING MATERIAL, METHOD OF PREPARING THE SAME, AND OPTICAL MEMBER AND APPARATUS INCLUDING THE QUANTUM DOT-CONTAINING MATERIAL

A quantum dot-containing material includes: a quantum dot-containing complex including a quantum dot and a first matrix material; and a second matrix material, wherein the quantum dot is dispersed in the first matrix material, the quantum dot-containing complex is dispersed in the second matrix material, and a refractive index of the first matrix material is greater than that of the second matrix material. 1. A quantum dot-containing material comprising:a quantum dot-containing complex comprising a quantum dot and a first matrix material; anda second matrix material,wherein the quantum dot is dispersed in the first matrix material,the quantum dot-containing complex is dispersed in the second matrix material, anda refractive index of the first matrix material is greater than a refractive index of the second matrix material.2. The quantum dot-containing material of claim 1 ,wherein the quantum dot comprises a group III-V semiconductor compound and a group II-VI semiconductor compound.3. The quantum dot-containing material of claim 1 ,wherein the refractive index of the first matrix material is from 1.55 to 2.00, and the refractive index of the second matrix material is from 1.30 to 1.55.4. The quantum dot-containing material of claim 1 ,wherein a difference between the refractive index of the first matrix material and the refractive index of the second matrix material is from 0.05 to 0.60.5. The quantum dot-containing material of claim 1 ,wherein the first matrix material comprises a first polymer derived from polymerization of a first monomer by solution polymerization, andthe first monomer is a water-soluble vinyl-based monomer, a water-soluble acryl-based monomer, a water-soluble acrylamide-based monomer, or any combination thereof.6. The quantum dot-containing material of claim 1 ,the second matrix material comprises a second polymer derived from polymerization of a second monomer by photopolymerization, andthe second monomer comprises an acryl-based monomer.7. ...

RED FLUORESCENT BODY AND LIGHT-EMITTING DEVICE

A red phosphor represented by general formula: MSiAlN, wherein M is at least one or more elements selected from Mg, Ca, Sr and Ba, and is partially replaced with Eu and has, as a host crystal, a crystal structure identical to that of a CaAlSiNcrystal phase, and the phosphor has a bulk density of 0.70 g/cmor more and 2.30 g/cmor less. There is also provided a light-emitting element including the red phosphor and a semiconductor light-emitting element capable of exciting the red phosphor. 1. A red phosphor represented by general formula: MSiAlN , wherein M is at least one or more elements selected from Mg , Ca , Sr and Ba , wherein the phosphor comprises M partially replaced with Eu and having , as a host crystal , a crystal structure identical to that of a CaAlSiNcrystal phase , wherein the phosphor has a bulk density of 0.70 g/cmor more and 2.30 g/cmor less.2. The red phosphor according to claim 1 , having an angle of repose of 60° or less.3. The red phosphor according to claim 1 , wherein M is Ca claim 1 , and the phosphor has a bulk density of 0.70 g/cmor more and 1.80 g/cmor less.4. The red phosphor according to claim 1 , wherein M is Ca or Sr claim 1 , and the phosphor has a bulk density of 1.20 g/cmor more and 2.30 g/cmor less.5. The red phosphor according to claim 1 , having an angle of repose of 20° or more.6. The red phosphor according to claim 1 , having an angle of repose of 45° or less.7. A light-emitting element comprising the red phosphor according to claim 1 , and a semiconductor light-emitting element capable of exciting the red phosphor.8. A light-emitting apparatus comprising the light-emitting element according to . The invention relates to a red phosphor for a LED (Light Emitting Diode) or a LD (Laser Diode), and a light-emitting apparatus using the red phosphor.White LEDs are devices that emit pseudo-white light by combinations of semiconductor light-emitting elements and phosphors, and combinations of blue LEDs and YAG yellow phosphors are known ...

QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME

A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device. 1. A quantum dot , comprisinga core comprising a semiconductor nanocrystal comprising a Group III-V compound; anda first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and optionally sulfur, anda second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell comprising zinc, sulfur, and optionally selenium,wherein the quantum dot does not comprise cadmium,an emission peak wavelength of the quantum dot is in a range of about 500 nanometers to about 550 nanometers, andan ultraviolet-visible absorption spectrum of the quantum dot comprises a first exciton absorption peak and a second exciton absorption peak.2. The quantum dot of claim 1 , wherein an absolute value of a second derivative of the second exciton absorption peak is greater than or equal to about 0.001.3. The quantum dot of claim 1 , wherein a difference between an energy of the first exciton absorption peak and an energy of the second exciton absorption peak is greater than or equal to about 0.34 ...

BLUE-EMITTING NANOCRYSTALS WITH CUBIC SHAPE AND FLUORIDE PASSIVATION

This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided. 1. A nanostructure comprising:a nanocrystal core; andat least one shell disposed on the core,wherein at least one shell comprises ZnS and fluoride.2. The nanostructure of claim 1 , wherein the core comprises ZnSeTe claim 1 , and wherein 0≤x<1.3. The nanostructure of claim 1 , wherein at least one shell comprises ZnSe.4. The nanostructure of claim 1 , wherein the at least one shell comprises a first shell comprising ZnSe and a second shell comprising ZnS and fluoride.5. The nanostructure of claim 1 , wherein the fluoride is in the form of a metal fluoride claim 1 , ammonium fluoride claim 1 , or tetraalkylammonium fluoride.6. (canceled)7. The nanostructure of claim 1 , wherein the molar ratio of fluoride in the nanostructure to zinc in the nanostructure is between about 0.05 and about 0.35.8. The nanostructure of claim 1 , wherein the nanostructure comprises:{'sub': '2', 'a core comprising ZnSe, and at least one shell comprising ZnS and ZnF;'}{'sub': '2', 'a core comprising ZnSe, at least one shell comprising ZnSe, and at least one shell comprising ZnS and ZnF;'}{'sub': 1-x', 'x', '2, 'a core comprising ZnSeTe, wherein 0≤x<1, and at least one shell comprising ZnS and ZnF; or'}{'sub': 1-x', 'x', '2, 'a core comprising ZnSeTe, wherein 0≤x<1, at least one shell comprising ZnSe, and at least one shell comprising ZnS and ZnF.'}11. The nanostructure of claim 10 , wherein the first metal fluoride comprises ZnF claim 10 , HfF claim 10 , or ZrF.12. The ...

PHOSPHOR-INTEGRATED NANOPARTICLES USED IN FLUORESCENCE OBSERVATION

The present invention may provide phosphor-integrated nanoparticles whose precipitation and/or aggregation, particularly aggregation can be inhibited upon carrying out immunostaining therewith and which can thus be used for staining even after long-term storage without requiring a complicated operation, the phosphor-integrated nanoparticles preferrably maintaining excellent performance, such as staining properties, even after long-term storage. The phosphor-integrated nanoparticles of the present invention have an average sphericity (f) of 0.80 to 0.95 and preferably have an average circumference ratio (R) of 0.50 to 0.95. More preferably, the matrix of the particles contains an organic compound, the phosphor-integrated nanoparticles have an average particle size of 300 nm or less, and a biological component-binding molecule is bound on the particle 1. Phosphor-integrated nanoparticles having an average value of the sphericity (f) represented by the following Formula (1) of 0.80 to 0.95:{'br': None, 'i': f=[M', '/N, 'sup': '0.5', '/(π/4)]max\u2003\u2003(1)'}{'sup': '2', '(wherein, M represents the area of a projected cross-section (nm) of a fine particle, and Nmax represents the maximum diameter (nm) of said cross-section).'}2. The phosphor-integrated nanoparticles according to claim 1 , which have an average value of the circumference ratio (R) represented by the following Formula (2) of 0.50 to 0.95:{'br': None, 'i': R=', 'M/π]', 'r, 'sup': '0.5', '2π([)/1\u2003\u2003(2)'}{'sup': '2', '(wherein, M represents the area of a projected cross-section (nm) of a fine particle, and r1 represents the circumferential length (nm) of said cross-section).'}3. The phosphor-integrated nanoparticles according to claim 1 , wherein the matrix of said particles comprises an organic compound.4. The phosphor-integrated nanoparticles according to claim 1 , wherein said organic compound is a thermosetting resin.5. The phosphor-integrated nanoparticles according to claim 1 , which have ...

LIGHT SOURCE DEVICE

A light source device includes an excitation light source, and a fluorescence layer configured to emit fluorescence by receiving excitation light emitted from the excitation tight source. The fluorescence layer includes at least one selected from a group consisting of a first fluorescent substance and a second fluorescent substance. The first fluorescent substance is configured to emit fluorescence having a peak wavelength ranging :from 400 nm to 510 nm, inclusive, by receiving the excitation light. The second fluorescent substance is configured to emit fluorescence having a peak wavelength ranging from 580 nm to 700 nm, inclusive, by receiving the excitation light. The first fluorescent substance and the second fluorescent substance each have a fluorescence lifetime ranging from 0.1 nanoseconds to 250 nanoseconds, inclusive. Energy density of the excitation light is 10 W/mmor more. 1. A light source device comprising:an excitation light source; anda fluorescence layer configured to emit fluorescence by receiving excitation light emitted from the excitation light source,wherein:{'b': 400', '510, 'the fluorescence layer includes at least one selected from a group consisting of a first fluorescent substance and a second fluorescent substance, the first fluorescent substance being configured to emit fluorescence having a peak wavelength ranging from nm to nm, inclusive, by receiving the excitation light, the second fluorescent substance being configured to emit fluorescence having a peak wavelength ranging from 580 nm to 700 nm, inclusive, by receiving the excitation light,'}the first fluorescent substance and the second fluorescent substance each have a fluorescence lifetime ranging from 0.1 nanoseconds to 250 nanoseconds, inclusive, and{'sup': '2', 'energy density of the excitation light is 10 W/mmor more.'}2. The light source device according to claim 1 , wherein the first fluorescent substance includes a chemical compound represented by Lu(GaAl)O:Ce claim 1 , where ...

Ceramic Wavelength Converter Having a High Reflectivity Reflector

There is herein described a ceramic wavelength converter having a high reflectivity reflector. The ceramic wavelength converter is capable of converting a primary light into a secondary light and the reflector comprises a reflective metal layer and a dielectric buffer layer between the ceramic wavelength converter and the reflective metal layer. The buffer layer is non-absorbing with respect to the secondary light and has an index of refraction that is less than an index of refraction of the ceramic wavelength converter. Preferably the reflectivity of the reflector is at least 80%, more preferably at least 85% and even more preferably at least 95% with respect to the secondary light emitted by the converter. 1. A ceramic wavelength converter having a high reflectivity reflector , the ceramic wavelength converter being capable of converting a primary light into a secondary light , the reflector comprising a reflective metal layer and a dielectric buffer layer between the ceramic wavelength converter and the reflective metal layer , the buffer layer being non-absorbing and non-wavelength selective with respect to the secondary light and having an index of refraction that is less than an index of refraction of the ceramic wavelength converter.2. The ceramic wavelength converter of claim 1 , wherein the reflectivity of the reflector is at least 80% with respect to the secondary light.3. The ceramic wavelength converter of claim 1 , wherein the reflectivity of the reflector is at least 85% with respect to the secondary light.4. The ceramic wavelength converter of claim 1 , wherein the reflectivity of the reflector is at least 95% with respect to the secondary light.5. The ceramic wavelength converter of claim 1 , where the converter comprises at least one phosphor selected from (Y claim 1 ,Lu claim 1 ,Gd)AlO:Ce and (Ba claim 1 ,Ca claim 1 ,Sr)SiON:Eu.6. The ceramic wavelength converter of claim 1 , wherein the converter is in the form of a flat plate having a thickness ...

PHOSPHOR AND ILLUMINATION DEVICE UTILIZING THE SAME

A phosphor is provided, which has a composition of SrLiAlN:Ce, wherein 0 Подробнее

LIGHT EMITTING DEVICE

A light emitting device, comprising a light emitting element having a peak emission wavelength in a range of from 440 nm to 460 nm, and a phosphor member. The phosphor member contains: a first phosphor having a peak emission wavelength in a range of from 440 nm to 550 nm and comprising at least one selected from the group consisting of an Eu-activated alkaline earth aluminate or an Eu-activated silicate containing Ca, Mg, and Cl; a second phosphor having a peak emission wavelength in a range of from 500 nm to 600 nm and comprising a Ce-activated rare earth aluminate; a third phosphor having a peak emission wavelength in a range of from 610 nm to 650 nm and comprising an Eu-activated silicon nitride containing Al and at least one selected from the group consisting of Sr and Ca; and a fourth phosphor having a peak emission wavelength in a range of from 650 nm to 670 nm and comprising a Mn-activated fluorogermanate. 1. A light emitting device , comprising:a light emitting element having a peak emission wavelength in a range of from 440 nm to 460 nm, anda phosphor member, whereinthe phosphor member contains:a first phosphor having a peak emission wavelength in a range of from 440 nm to 550 nm and comprising at least one selected from the group consisting of an Eu-activated alkaline earth aluminate and an Eu-activated silicate containing Ca, Mg, and Cl,a second phosphor having a peak emission wavelength in a range of from 500 nm to 600 nm and comprising a Ce-activated rare earth aluminate,a third phosphor having a peak emission wavelength in a range of from 610 nm to 650 nm and comprising an Eu-activated silicon nitride containing Al and at least one selected from the group consisting of Sr and Ca, anda fourth phosphor having a peak emission wavelength in a range of from 650 nm to 670 nm and comprising a Mn-activated fluorogermanate.2. The light emitting device according to further comprising claim 1 ,a fifth phosphor having a peak emission wavelength in a range of from ...

Light-Emitting Device

A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel comprising at least three sub-pixels, wherein a first sub-pixel includes a first conversion element having a green phosphor, wherein a second sub-pixel includes a second conversion element having a red phosphor and wherein a third sub-pixel is free of a conversion element, the third sub-pixel configured to emit blue primary radiation, wherein each sub-pixel has an edge length of at most 100 μm, and wherein the light-emitting device is configured to enhance a gamut coverage of an emitted radiation. 1. A light-emitting device comprising:a pixel comprising at least three sub-pixels;a first sub-pixel comprising a first conversion element, wherein the first conversion element comprises a green phosphor;a second sub-pixel comprising a second conversion element, wherein the second conversion element comprises a red phosphor; anda third sub-pixel free of a conversion element, wherein the third sub-pixel is configured to emit blue primary radiation,wherein each sub-pixel has an edge length of at most 100 μm, andwherein the light-emitting device is configured to enhance a gamut coverage of an emitted radiation.2. The light-emitting device according to claim 1 , wherein the red phosphor and/or the green phosphor comprises quantum dots.3. The light-emitting device according to claim 1 , wherein the first conversion element and/or the second conversion element has a thickness of at most 5 μm.4. The light-emitting device according to claim 1 , wherein the first conversion element and/or the second conversion element is free of non-converter nanoparticles.5. The light-emitting device according to claim 1 , further comprising an absorption layer arranged on the first conversion element and/or the second conversion element claim 1 , wherein the absorption layer is configured to absorb blue primary radiation.6. The light-emitting device according to claim 5 , wherein the absorption layer ...

Ceramic Phosphor Target

There is herein described a ceramic phosphor target which may be used in a laser-activated remote phosphor application. The target comprises a substantially flat ceramic phosphor converter comprised of a photoluminescent polycrystalline ceramic which is attached to a reflective metal substrate by a high thermal conductivity adhesive. 1. A ceramic phosphor target , the target comprising:a substantially flat ceramic phosphor converter comprised of a photoluminescent polycrystalline ceramic, the ceramic phosphor converter being attached to a reflective surface of a metal substrate by a high thermal conductivity adhesive whereby a bond line between the ceramic phosphor converter and the substrate has a thermal conductance of at least 0.05 W/K.2. The target of wherein the bond line thickness between the ceramic phosphor converter and the substrate is less than 10 micrometers.3. The target of wherein the adhesive has a thermal conductivity of at least 0.4 W/m/K.4. The target of wherein the adhesive is a zinc-oxide filled silicone.5. The target of wherein the ceramic phosphor converter is comprised of at least one of Ce:YAG claim 1 , Ce:LuAG claim 1 , Ce:GdYAG claim 1 , or Eu:SrSiON.6. The target of herein the reflective surface has a reflectivity of at least 85% with respect to the light emitted by the ceramic phosphor converter.7. The target of wherein the bond line has a thermal conductance of greater than 0.1 W/K.8. The target of wherein the ceramic phosphor converter has a scattering length between 0.02 t and 0.2 t where t is the thickness of the ceramic phosphor converter.9. The target of wherein the target provides a radiance of at least 1.0×10W/m/sr.10. The target of wherein the ceramic phosphor converter is comprised of Ce:YAG and the adhesive is a zinc oxide-filled silicone.11. The target of wherein the ceramic phosphor converter has a slightly concave surface which faces away from the reflective substrate.12. The target of herein the reflective surface has a ...

SUPERTETRAHEDRON PHOSPHOR FOR SOLID-STATE LIGHTING

The invention provides a lighting unit () comprising a light source (), configured to generate light source light () and a luminescent material (), configured to convert at least part of the light source light () into luminescent material light (), wherein the luminescent material () comprises a phosphor (), wherein this phosphor comprises an alkaline earth aluminum nitride based material having a cubic crystal structure with T5 supertetrahedra, wherein the T5 supertetrahedra comprise at least Al and N, and wherein the alkaline earth aluminum nitride based material further comprises a luminescent lanthanide incorporated therein. 2. The lighting unit according to claim 1 , wherein (a) the luminescent lanthanide is selected from the group consisting of Eu (II) claim 1 , Sm claim 1 , Yb claim 1 , Ce claim 1 , Pr claim 1 , Nd claim 1 , Sm claim 1 , Eu (III) claim 1 , Gd claim 1 , Tb claim 1 , Dy claim 1 , Ho claim 1 , Er claim 1 , and Tm claim 1 , and wherein (b) the alkaline earth aluminum nitride based material is of the space Fd-3m.3. The lighting unit according to claim 1 , wherein the T5 supertetrahedra comprise AlNtetrahedra.4. The lighting unit according to claim 1 , wherein G=Al.5. The lighting unit according to claim 1 , wherein M comprises one or more of Ca claim 1 , Sr claim 1 , and Mg claim 1 , wherein A comprises Li claim 1 , wherein G at least comprises Al claim 1 , wherein Q comprises Mg claim 1 , wherein D comprises Si claim 1 , wherein R comprises O claim 1 , wherein Es comprises Eu claim 1 , and wherein RE comprises Ce claim 1 , wherein further x/y<0.1 or y/x<0.1 claim 1 , and wherein d=n=c=0.6. The lighting unit according to claim 1 , wherein the light source comprises a light emitting diode (LED) claim 1 , and wherein the alkaline earth aluminum nitride based material comprises MAAlN:EU claim 1 , with δ in the range of 0-2.7. The lighting unit according to claim 1 , wherein the luminescent material further comprise one or more other phosphors ...

Phosphor composition, light-emitting device package comprising same, and lighting apparatus

An embodiment relates to a phosphor composition, a light-emitting device package comprising the same, and a lighting apparatus and, more particularly, to a phosphor composition comprising a first phosphor, excited by an excitation light source, for emitting a first wavelength range of light, a second phosphor, excited by the excitation light source, for emitting a second wavelength range of light, and a third phosphor, excited by the excitation light source, for emitting a third wavelength range of light. The light emitted from the phosphor composition exhibits an increased intensity of light in a blue-green wavelength region with the consequent improvement of color rendering index and a shortened wavelength of light in a red wavelength region with the consequent improvement of luminous flux.

ALUMINUM NITRIDE SINTERED BODY, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR MANUFACTURING EQUIPMENT COMPONENT USING ALUMINUM NITRIDE SINTERED BODY

An aluminum nitride sintered body for use in a semiconductor manufacturing apparatus is provided. The aluminum nitride sintered body exhibits, in a photoluminescence spectrum thereof in a wavelength range of 350 nm to 700 nm obtained with 250 nm excitation light, a highest emission intensity peak within a wavelength range of 580 nm to 620 nm. 1. An aluminum nitride sintered body for use in a semiconductor manufacturing apparatus , wherein , in a photoluminescence spectrum thereof in a wavelength range of 350 nm to 700 nm obtained with 250 nm excitation light , the aluminum nitride sintered body exhibits a highest emission intensity peak within a wavelength range of 580 nm to 620 nm.2. A method for producing the aluminum nitride sintered body of claim 1 ,the method comprising:a step of forming a compact, a debindered compact, or a calcined compact, containing aluminum nitride as a predominant ingredient, anda firing step of firing the compact, the debindered compact, or the calcined compact, to yield the aluminum nitride sintered body, wherein{'b': 2', '1', '1', '1', '2, 'a water absorption ratio (W-W)/W is lower than 0.2 wt. %, where W is the weight of the compact, the debindered compact, or the calcined compact, as measured immediately after formation thereof, and W is the weight of the compact, the debindered compact, or the calcined compact, as measured just before firing thereof.'}3. A semiconductor manufacturing equipment component employing the aluminum nitride sintered body of .4. The semiconductor manufacturing equipment component according to claim 3 , wherein the semiconductor manufacturing apparatus is an electrostatic chuck claim 3 , a ceramic heater claim 3 , or a susceptor. This application claims priority from Japanese Patent Application No. 2019-132906 filed on Jul. 18, 2019 and Japanese Patent Application No. 2020-117613 filed on Jul. 8, 2020, the entire contents of which are incorporated herein by reference.The present disclosure relates to an ...

COMPOSITION, PATTERNED FILM, AND ELECTRONIC DEVICE INCLUDING THE SAME

A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal. 1. A composition , comprisinga quantum dot not comprising cadmium;a dispersing agent;a polymerizable monomer comprising a carbon-carbon double bond;an initiator; anda solvent, a seed comprising a first semiconductor nanocrystal,', 'a quantum well comprising a second semiconductor nanocrystal, the quantum well surrounding the seed, and', 'a shell disposed on the quantum well, the shell comprising a third semiconductor nanocrystal,, 'wherein the quantum dot comprises'}the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, andan energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.2. The composition of claim 1 , whereinwhen the quantum dot emits red light, a thickness of the quantum well is greater than or equal to about 0.9 nanometers and less than or equal to about 1.9 nanometers andwhen the quantum dot emits green light, a ...

QUANTUM DOT

The present disclosure provides a quantum dot. The quantum dot includes a group III-V quantum dot core, and at least one type of halide ions, acetylacetonate ions, or hydroxyl ions bound to a surface of the group III-V quantum dot core, where the halide ions, the acetylacetonate ions and the hydroxyl ions are bound with group III cations on the surface of the group III-V quantum dot core. 1. A quantum dot , comprising a group III-V quantum dot core , and at least one type of halide ions , acetylacetonate ions , or hydroxyl ions bound to a surface of the group III-V quantum dot core , wherein the halide ions , the acetylacetonate ions and the hydroxyl ions are bound with group III cations on the surface of the group III-V quantum dot core.2. The quantum dot according to claim 1 , wherein:bound to the surface of the group III-V quantum dot core are the halide ions; orbound to the surface of the group III-V quantum dot core are the hydroxyl ions; orbound to the surface of the group III-V quantum dot core are the acetylacetonate ions; orbound to the surface of the group III-V quantum dot core are the halide ions and the hydroxyl ions; orbound to the surface of the group III-V quantum dot core are the acetylacetonate ions and the hydroxyl ions; orbound to the surface of the group III-V quantum dot core are the halide ions and the acetylacetonate ions; orbound to the surface of the group III-V quantum dot core are the halide ions, the acetylacetonate ions and the hydroxyl ions.3. The quantum dot according to claim 1 , wherein a material of the group III-V quantum dot core is selected from at least one of GaP claim 1 , GaN claim 1 , GaAs claim 1 , GaSb claim 1 , AlN claim 1 , AlP claim 1 , AlAs claim 1 , AlSb claim 1 , InP claim 1 , InAs claim 1 , InSb claim 1 , GaNP claim 1 , GaNAs claim 1 , GaNSb claim 1 , GaPSb claim 1 , AlNP claim 1 , AlNAs claim 1 , AlPAs claim 1 , AlPSb claim 1 , InNP claim 1 , InNAs claim 1 , InNSb claim 1 , InPAs claim 1 , InPSb claim 1 , or InPGa. ...

PHOSPHOR AND LIGHT-EMITTING DEVICE USING SAME

A phosphor in which an element represented by R is solid-solutionized in a phosphor host crystal represented by M(L, A)X, wherein M is at least one type of element selected from Mg, Ca, Sr, Ba and Zn, L is at least one type of element selected from Li, Na and K, A is at least one type of element selected from Al, Ga, B, In, Sc, Y, La and Si, X is at least one type of element selected from O, N, F and Cl (where all of X being N is excluded), R is at least one type of element selected from Mn, Cr, Ti, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho and Yb, α, β, γ and δ satisfy α+β+γ+δ=9, 0.00<α≤1.30, 3.70≤β≤4.30, 3.70≤γ≤4.30, and 0.00<δ≤1.30. 1. A phosphor in which an element represented by R is solid-solutionized in a phosphor host crystal represented by M(L , A)X ,wherein,M is at least one type of element selected from Mg, Ca, Sr, Ba and Zn,L is at least one type of element selected from Li, Na and K,A is at least one type of element selected from Al, Ga, B, In, Sc, Y, La and Si,X is at least one type of element selected from O, N, F and Cl (where all of X being N is excluded),R is at least one type of element selected from Mn, Cr, Ti, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho and Yb, andα, β, γ and δ satisfy α+β+γ+δ=9,0.00<α≤1.30,3.70≤β≤4.30,3.70≤γ≤4.30, and0.00<δ≤1.30.2. The phosphor according to claim 1 ,wherein, in the phosphor host crystal,M is at least one type of element selected from Mg, Ca, Sr, Ba and Zn,some or all of L is elemental Li,some or all of A is at least one type of element selected from Al, Ga and Si,X is one type or two types of elements selected from O and N (where all of X being N is excluded), andR is at least one type of element selected from Mn, Cr, Ti, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho and Yb.3. The phosphor according to claim 1 ,wherein the phosphor host crystal is represented by any of the following composition formulae:{'sub': 3−p', '1+p', '4−2p', '2p', '3−p', '1+p', '4−2p', '2p', '3−p', '1+p', '4−2p', '2p', '3−p', '1+p', '4−2p', '2p', '3−p', '1+p', '4−2p', '2p', ' ...

LIGHT EMITTING DEVICE WITH IMPROVED WARM-WHITE COLOR POINT

A light emitting device is disclosed and includes an emission source configured to emit a primary blue light and a wavelength-converting element configured to convert the primary blue light to a secondary light having a correlated color temperature (CCT) in the range of 1600K-2500K and color rendering index (CRI) in the range of 40-60, the wavelength-converting element including a red phosphor material having a peak emission wavelength that is less than 620 nm and a green phosphor material having a peak emission wavelength that is greater than 530 nm. The device may exhibit a melanopic/photopic ratio of less than 0.25 and/or may exhibit a radiometric power fraction of light having a wavelength below 530 nm below. 1. A light emitting device , comprising:an emission source configured to emit a primary blue light; anda wavelength-converting element configured to convert the primary blue light to a secondary light having a melanopic/photopic ratio of less than 0.25, the wavelength-converting element including a red phosphor material having a peak emission wavelength that is less than 620 nm and a green phosphor material having a peak emission wavelength that is greater than 530 nm.2. The light emitting device of claim 1 , wherein the red phosphor has a peak emission wavelength of approximately 604 nm claim 1 , and the green phosphor has a peak emission wavelength of approximately 543 nm.3. The light emitting device of claim 1 , wherein the emission source includes at least one light emitting diode.4. The light emitting device of claim 1 , wherein the peak emission wavelength of the green phosphor material is approximately in a range 530-560 nm and the peak emission wavelength of the red phosphor material is approximately in a range of 580-620 nm.5. The light emitting device of claim 1 , wherein the wavelength-converting element has a green-to-red phosphor weight ratio of approximately 1.6.6. The light emitting device of claim 1 , wherein the wavelength-converting ...

WAVELENGTH CONVERSION MEMBER, BACKLIGHT UNIT AND IMAGE DISPLAY DEVICE

A wavelength conversion member which contains a quantum dot phosphor and is capable of converting incident light into green light and red light, and which is configured such that the half-value width of the green light emission spectrum (FWHM-G) is 30 nm or less. 1. A wavelength conversion member which comprises a quantum dot phosphor and is able to convert incident light into a green light and a red light , in which a half-value width of a green light emission spectrum (FWHM-G) is 30 nm or less.2. The wavelength conversion member according to claim 1 , wherein a concentration of Cd is 100 ppm or less.3. A wavelength conversion member which comprises a quantum dot phosphor containing Cd and is able to convert incident light into a green light and a red light claim 1 , in which a half-value width of a green light emission spectrum (FWHM-G) is 30 nm or less claim 1 , and a concentration of Cd is 100 ppm or less.4. The wavelength conversion member according to claim 1 , wherein the half-value width of a red light emission spectrum (FWHM-R) is 40 nm or more.5. The wavelength conversion member according to claim 1 , wherein a peak wavelength of the green light emission spectrum is in a range of 530±20 nm claim 1 , and a peak wavelength of a red light emission spectrum is in a range of 630±20 nm.6. The wavelength conversion member according to claim 1 , wherein the quantum dot phosphor comprises a quantum dot phosphor that emits green light and a quantum dot phosphor that emits red light claim 1 , the quantum dot phosphor that emits green light comprises a compound containing Cd claim 1 , and the quantum dot phosphor that emits red light comprises a compound containing In.7. The wavelength conversion member according to claim 1 , further comprising a resin cured product.8. The wavelength conversion member according to claim 7 , further comprising a covering material that covers at least a part of the resin cured product.9. The wavelength conversion member according to ...

White Light Illumination System with Narrow Band Green Phosphor and Multiple-Wavelength Excitation

A white light illumination system may comprise: a phosphor package; a first radiation source for providing co-excitation radiation to the phosphor package, the source emitting in wavelengths ranging from about 250 nm to about 410 nm; and a second radiation source for providing co-excitation radiation to the phosphor package, the source emitting in wavelengths ranging from about 410 nm to about 540 nm; wherein the phosphor package is configured to emit photoluminescence in wavelengths ranging from about 440 nm to about 700 nm upon co-excitation from the first and second radiation sources, and wherein the phosphor package comprises at least one narrow band green phosphor with a photoluminescence peak with a full width at half maximum of less than 60 nm, and wherein the narrow band green phosphor is configured to emit photoluminescence in wavelengths ranging from about 500 nm to about 550 nm.

QUANTUM DOT ENSEMBLE AND MANUFACTURING METHOD THEREOF

A manufacturing method of a quantum dot ensemble including quantum dots each having a composition represented by a formula ABCD(0≦x≦1, 0≦y≦1, A and B are elements selected from Zn and Mg, and C and D are elements selected from the group consisting of O, S, Se, and Te). The quantum dots forming the ensemble in a mixed manner, including (a) step of preparing a plurality of quantum dots each having a composition represented by a formula ABCD(0≦x≦1, 0≦y≦1, A and B are elements selected from the group consisting of Zn and Mg, and C and D are elements selected from the group consisting of O, S, Se, and Te); and (b) step of uniformizing band gap energy of the plurality of quantum dots by optically etching the plurality of quantum dots which are prepared in the step (a). In the step (a), target values of x and y in the formula ABCDare set in such a manner that band gap energy of ABCDattains an approximately minimal value. In the step (b), the quantum dot ensemble including the quantum dots in which at least one of x and y in the formula ABCDis varied by equal to or greater than 0.05 is processed, the quantum dot ensemble having an emission spectrum of which the half-width is less than 50 nm is processed, the quantum dot ensemble having a band gap energy which is greater than a band gap energy of a bulk mixed crystal having a same composition as the composition of each of the plurality of quantum dots included in the quantum dot ensemble is processed, and the plurality of quantum dots are processed such that the average particle size thereof is equal to or less than 20 nm. 1. A manufacturing method of a quantum dot ensemble including quantum dots each having a composition represented by a formula ABCD(0≦x≦1 , 0≦y≦1 , A and B are elements selected from the group consisting of Zn and Mg , and C and D are elements selected from the group consisting of O , S , Se , and Te) , the quantum dots forming the ensemble in a mixed manner , comprising:{'sub': x', '1-x', 'y', '1-y, '(a) ...

Phosphor, method for producing phosphor and light emitting device

The present invention provides a phosphor comprising a cerium-activated sialon crystal having a basic composition represented by formula (1): (Sr 1-x Ce x ) α Si β Al γ O δ N ω   formula: (1) (wherein, x is 0<x<1, α is 0<α≦3, and β, γ, δ and ω are numbers such that numerical values converted when α is 2 satisfy 5≦β≦9, 1≦γ≦5, 0≦δ≦1.5, and 10≦ω≦20), wherein the phosphor includes particles having a sphericity of 0.65 or more and emits yellow light by being excited by ultraviolet light, violet light or blue light.

LIGHT EMITTING DEVICE

A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm. 1. A white light emitting device , comprising:a housing including a mounting region;a light emitting diode chip mounted on the mounting region and configured to emit light having a peak wavelength in a blue wavelength band and a Full Width at Half Maximum (FWHM) of 40 nm or less at the peak wavelength;a wavelength converter disposed on the light emitting diode chip;a first phosphor distributed in the wavelength converter and configured to emit light having a peak wavelength in a green wavelength band;a second phosphor distributed in the wavelength converter and configured to emit light having a peak wavelength in a red wavelength band; anda third phosphor distributed in the wavelength converter and configured to emit light having a peak wavelength in a blue wavelength band,wherein:the first phosphor includes a first green phosphor and a second green phosphor and the first green phosphor and the second green phosphor are formed of different materials;the second phosphor includes a first red phosphor and a second red phosphor and the first red phosphor and the second red phosphor are formed of different materials;the third phosphor is excited by the light emitted from the light emitting diode chip to emit light having a peak wavelength of 450 nm to 480 nm, anda white light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, ...

WAVELENGTH CONVERSION MEMBER AND LIGHT EMITTING DEVICE

A light emitting device includes a light source and a wavelength converter that includes a resin including a constitutional unit that includes an ionic liquid or a derivative of the ionic liquid, and a semiconductor nanoparticle phosphor included in the resin and provided on at least a portion of the light source. A wavelength converter includes a resin including a constitutional unit that includes an ionic liquid or a derivative of the ionic liquid, and a semiconductor nanoparticle phosphor included in the resin and emitting fluorescence upon receiving excitation light. A light emitting device includes the wavelength converter and a light source emitting excitation light to the wavelength converter, which is provided separately from the wavelength converter. 120-. (canceled)21. A light emitting device comprising:a light source; anda wavelength converter that includes a resin including a constitutional unit that includes an ionic liquid or a derivative of the ionic liquid, and a semiconductor nanoparticle phosphor included in the resin and provided on at least a portion of the light source.22. The light emitting device according to claim 21 , wherein the ionic liquid includes a polymerizable functional group.23. The light emitting device according to claim 22 , wherein the polymerizable functional group is a (meth)acrylic acid ester group.24. The light emitting device according to claim 23 , wherein the ionic liquid including the acrylic acid ester group is 2-(methacryloyloxy)-ethyltrimethylammonium bis(trifluoromethanesulfonyl) imide or 1-(3-acryloyloxy-propyl)-3-methylimidazolium bis(trifluoromethanesulfonyl) imide.25. The light emitting device according to claim 21 , wherein the semiconductor nanoparticle phosphor emits visible light including a wavelength from about 380 nm to about 780 nm.26. The light emitting device according to claim 21 , wherein the semiconductor nanoparticle phosphor includes at least one material selected from the group consisting of InP ...

REFLECTIVE ARTICLES COMPRISING A MICRO-CELLULAR STRUCTURE AND CHARACTERIZED BY IMPROVED (BLUE) LED AGING PERFORMANCE

Provided are articles having a cellular structure and also having improved aging performance under certain types of illumination. Also provided are methods of utilizing the disclosed articles. 1. An article , comprising:a region having a cellular structure comprising a plurality of cells,the plurality of cells having a number-average cross-sectional dimension in the range of from about 0.3 micrometers up to about 100 micrometers, and{'sup': '2', 'the article having a YI of less than 15 upon exposure for 100 hours to 35 kW/m'}2. The article of claim 1 , wherein the article has a YI according of less than 15 upon exposure for 200 hours to 35 kW/millumination having a peak centered at about 450 nm.3. The article of claim 1 , wherein the article has a YI according of less than 15 upon exposure for 300 hours to 35 kW/millumination having a peak centered at about 450 nm.4. The article of claim 1 , wherein the article is characterized as injection-molded.5. The article of claim 1 , wherein the region comprises an amount of phosphor.6. The article of claim 5 , wherein at least some of the phosphor resides on a surface of the article.7. The article of claim 1 , wherein the region comprises plastic claim 1 , metal claim 1 , glass claim 1 , carbon claim 1 , or any combination thereof.8. The article of claim 7 , wherein the plastic comprises a thermoplastic.9. The article of claim 8 , wherein the thermoplastic comprises polycarbonate.10. The article of claim 9 , wherein the plastic comprises a thermoset.11. The article of claim 1 , wherein the region comprises a nucleant.12. The article of claim 11 , wherein the nucleant comprises talc claim 11 , silica claim 11 , siloxane claim 11 , clay claim 11 , or any combination thereof.13. The article of claim 12 , wherein the nucleant comprises siloxane.14. The article of claim 1 , wherein the plurality of cells has a spatial density in the range of from 10cells/cmto 10cells/cm.15. The article of claim 1 , wherein the plurality of cells ...

NANOPHOSPHORS FOR VISIBLE LIGHT ENHANCEMENT

Disclosed herein are composite materials that comprise one or more nanophosphors capable of converting higher frequency, lower wavelength radiation into visible light. As used, the produced visible light enhances the amount of visible light already present from natural or artificial sources. 1. A method for preparing delaminated graphitic-phase nitrogen carbon (g-CN) , comprising:{'sub': 3', '4, '(a) dispersing from about 2% to about 10% weight/volume of g-CNinto a nitric acid solution;'}(b) heating the dispersion; and{'sub': 3', '4, '(c) isolating the delaminated g-CN.'}2. The method according to claim 1 , wherein the nitric acid solution contains from about 30% to about 70% by weight nitric acid.3. The method according to claim 1 , wherein the dispersion is heated at temperature from about 80° C. to about 100° C.4. The method according to claim 1 , wherein the g-CNis isolated by centrifuging the dispersion after cooling to room temperature.5. A composite claim 1 , comprising: i) a first phosphor that emits visible light in the range of from about 520 nm to about 700 nm when exposed to UV radiation; and', 'ii) a second phosphor that emits visible light in the range of from about 400 to about 520 nm when exposed to UV radiation; and, 'a) a visible light enhancing composition, comprisingb) a substrate.6. The composite according to claim 5 , wherein the composition comprises delaminated graphitic-phase nitrogen carbon (g-CN) and a phosphor chosen from copper-cysteamine (Cu-Cy) claim 5 , zinc sulfide (ZnS) claim 5 , silver-and manganese doped zinc sulfide (ZnS:Ag claim 5 , Mn) claim 5 , or activated zinc sulfide (ZnS(Mn)).7. The composite according to claim 5 , wherein the composition comprises g-CNand Cu-Cy.8. The composite according to claim 5 , wherein the composition comprises g-CNand ZnS.9. The composite according to claim 5 , wherein the composition comprises g-CNand ZnS:Ag claim 5 , Mn.10. The composite according to claim 5 , wherein the composition comprises g- ...

PHOSPHOR, LIGHT EMITTING DEVICE, ILLUMINATION APPARATUS, AND IMAGE DISPLAY APPARATUS

The present invention provides an LYSN phosphor having an emission peak in a long wavelength range, and having high emission luminance and a high temperature maintenance rate. The present invention is a phosphor including a tetragonal crystal phase, in which the crystal phase includes M element, La, A element, Si, and N, and satisfies a specific expression, and a lattice constant a is 10.104 Å or more and 10.154 Å or less. 1. A phosphor comprising ,a tetragonal crystal phase,wherein the crystal phase includes M element, La, A element, Si, and N, and satisfies the following formulae [I] and [II], and [{'br': None, 'i': x', 'w+x, '0.10≤/()≤0.50\u2003\u2003[I]'}, {'br': None, 'i': 'w+x+z≤', '2.80≤3.20\u2003\u2003[II]'}], 'a lattice constant a is 10.104 Å or more and 10.154 Å or lesswherein M element represents one or more of elements selected from activation elements; andA element represents one or more of elements selected from rare earth elements other than La and the activation elements,in formulae [I] and [II],w represents a content of La element when a molar ratio of Si is 6;x represents a content of A element when a molar ratio of Si is 6; andz represents a content of M element when a molar ratio of Si is 6.2. A phosphor comprising ,a tetragonal crystal phase,wherein the crystal phase includes M element, La, A element, Si, and N,a lattice constant a is 10.104 Å or more and 10.154 Å or less, and [{'br': None, 'i': x', 'w', 'x, '0.1≤2/(2+2)≤0.5\u2003\u2003[III]'}, {'br': None, 'i': 'w', '2.85≤2≤≤3.2\u2003\u2003[IV]'}], 'the phosphor is obtained by preparing raw materials such that a ratio of each element included in the raw materials satisfies the following formulae [III] and [IV] and firing the raw materialswherein M element represents one or more of elements selected from activation elements; andA element represents one or more of elements selected from rare earth elements other than La and the activation elements,in formulae [III] and [TV],w2 represents a ...

Semiconductor Illuminating Device

A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the LED phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope m 1 and a y-intercept n 1 in a CIE standard chromaticity diagram, with the slope m 1 =1.189 and the y-intercept n 1 =0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 K.

QUANTUM DOT MATERIAL, AND PREPARATION METHOD AND USE THEREOF

Provided are a quantum dot material, a preparation method and use thereof. The quantum material includes a quantum dot, and a first cladding layer and a second cladding clad outside of the quantum dot, wherein the first cladding layer is located between the quantum dot and the second cladding layer. The quantum dot material provided herein has good water and oxygen barrier properties and good stability. 1. A quantum dot material , comprising a quantum dot , and a first cladding layer and a second cladding layer clad outside of the quantum dot;wherein the first cladding layer is located between the quantum dot and the second cladding layer.2. The quantum dot material according to claim 1 , wherein the first cladding layer is made of any one or a combination of at least two materials selected from a group consisting of SiO claim 1 , ZnO claim 1 , AlO claim 1 , TiO claim 1 , FeO claim 1 , and FeO.3. The quantum dot material according to claim 1 , wherein the first cladding layer has a thickness of 5 nm to 100 μm.4. The quantum dot material according to claim 1 , wherein the quantum dot is any one or a combination of at least two selected from a group consisting of CdSe claim 1 , CdTe claim 1 , CdS claim 1 , ZnSe claim 1 , CdTe claim 1 , CuInS claim 1 , InP claim 1 , CsPbX claim 1 , CuZnSe claim 1 , and ZnMnSe.5. The quantum dot material according to claim 1 , wherein the second cladding layer is made of any one or a combination of at least two materials selected from a group consisting of AlO claim 1 , ZrO claim 1 , ZnO claim 1 , ZnS claim 1 , and TiO.6. The quantum dot material according to claim 1 , wherein the second cladding layer has a thickness of 1 nm to 100 μm.7. A preparation method for the quantum dot material according to claim 1 , comprising:(1) mixing a quantum dot solution and a precursor material of a first cladding layer, cladding by a reaction to obtain a quantum dot material with the first cladding layer; and(2) depositing a second cladding layer ...

B-SIALON PHOSPHOR AND LIGHT-EMITTING APPARATUS

A β-sialon phosphor represented by general formula: SiAlON(0 Подробнее

LIGHT EMITTING DEVICE

A light emitting device is provided. The light emitting device includes a light emitting element, which emits blue light, and a light transmissive member having a first principal face bonded to the light emitting element and a second principal face opposite the first principal face. The light transmissive member has a light transmissive base material and wavelength conversion substances, which are contained in the base material and which absorb the light from the light emitting element and emit light. The wavelength conversion substances are localized in the base material towards the first principal face, and include a first phosphor which emits green to yellow light and a second phosphor which emits red light. The first phosphor is more localized towards the first principal face than the second phosphor. The second phosphor is a manganese-activated fluoride phosphor. 1. A method of producing a light emitting device comprising the steps of:preparing a wavelength conversion sheet by successively adhering together a first sheet including a base material and a first phosphor, a second sheet including a base material and a second phosphor, and a third sheet including a base material in this order;preparing a light transmissive member by cutting the wavelength conversion sheet into small pieces using an ultrasonic cutter;applying a light guide member on a light emitting device and placing the light transmissive member on the light emitting device via the light guide member;forming a cover member that embed the light emitting device, the light guide member and the light transmissive member; andexposing an upper face of the light transmissive member by grinding the cover member using a grinder.2. The method of producing the light emitting device according to claim 1 , further comprising the step of flip-chip mounting the light emitting device on an aggregate substrate before the applying and placing step.3. The method of producing the light emitting device according to ...

LIGHTING DEVICE WITH A FIRST PHOSPHOR AND FILTER PARTICLES

A lighting device includes a radiation source that emits primary radiation in the wavelength range of 300 nm to 570 nm, a first phosphor arranged in a beam path of the primary radiation source that converts at least part of the primary radiation into secondary radiation in an orange to red wavelength range of 570 nm to 800 nm, and filter particles arranged in a beam path of the secondary radiation that absorb at least part of the secondary radiation. 118-. (canceled)19. A lighting device comprising:a radiation source that emits primary radiation in the wavelength range of 300 nm to 570 nm;a first phosphor arranged in a beam path of the primary radiation source that converts at least part of the primary radiation into secondary radiation in an orange to red wavelength range of 570 nm to 800 nm; andfilter particles arranged in a beam path of the secondary radiation that absorb at least part of the secondary radiation.20. The lighting device according to claim 19 , wherein a transmission spectrum of the filter particles has a cut-off-wavelength of 590 nm to 640 nm.21. The lighting device according to claim 19 , wherein the particles of the filter particles have a grain size of >50 μm.22. The lighting device according to claim 19 , wherein the filter particles comprise or consist of ground filter glass.23. The lighting device according to claim 19 , wherein the filter particles comprise or consist of a second phosphor claim 19 , and the second phosphor absorbs at least part of the secondary radiation and converts it into tertiary radiation.24. The lighting device according to claim 19 , wherein the first or the second phosphor has general formula M(Al claim 19 , Si)(N claim 19 ,O)with M=Ca claim 19 , Sr claim 19 , Ba and Eu as activator.25. The lighting device according to claim 19 , wherein the first or second phosphor comprises elements M claim 19 , A claim 19 , D claim 19 , E claim 19 , and X claim 19 , wherein M is one or more element(s) selected from the group ...

METHOD FOR PRODUCING BETA-SIALON FLUORESCENT MATERIAL

A method for producing a β-sialon fluorescent material can be provided. The method includes preparing a composition containing silicon nitride that contains aluminium, an oxygen atom, and europium, heat-treating the composition in a rare gas atmosphere or in a vacuum, and contacting the heat-treated composition with a gas containing elemental fluorine. 1. A method for producing a β-sialon fluorescent material , comprising:providing a composition comprising silicon nitride that contains aluminium, an oxygen atom, and europium;heat-treating the composition in a rare gas atmosphere or in a vacuum; andcontacting the heat-treated composition with a gas comprising elemental fluorine.2. The method according to claim 1 , wherein the gas comprising elemental fluorine comprises at least one selected from the group consisting of F claim 1 , CHF claim 1 , CF claim 1 , BrF claim 1 , BrF claim 1 , NHHF claim 1 , NHF claim 1 , SiF claim 1 , SF claim 1 , SF claim 1 , ClF claim 1 , KrF claim 1 , XeF claim 1 , XeF claim 1 , PF claim 1 , PF claim 1 , BF claim 1 , and NF.3. The method according to claim 1 , wherein contacting the heat-treated composition with a gas comprising elemental fluorine is performed in presence of an inert gas.4. The method according to claim 1 , wherein contacting the heat-treated composition with a gas comprising elemental fluorine is performed at a temperature of above 50° C. to less than 500° C.5. The method according to claim 1 , wherein heat-treating the composition in a rare gas atmosphere or in a vacuum is performed in presence of a europium compound.6. The method according to claim 1 , wherein heat-treating the composition in a rare gas atmosphere or in a vacuum is performed at a temperature of from 1300° C. to 1600° C.7. The method according to claim 1 , wherein providing the composition comprises heat-treating a mixture comprising an aluminium compound claim 1 , a europium compound claim 1 , and silicon nitride to obtain the composition.8. The method ...

PHOSPHOR, LIGHT-EMITTING DEVICE, IMAGE DISPLAY DEVICE, PIGMENT, AND ULTRAVIOLET ABSORBER

Provided are an oxynitride phosphor comprising a JEM crystal as a main component and being characterized by light-emitting properties (light emission color or excitation property, light emission spectrum) that is different from the known JEM phosphor, and an application thereof. The phosphor of the present invention comprises the JEM crystal activated with Eu and represented by MAl(Si, Al)(O, N)(where the M element is one or more elements selected from the group consisting of Ca, Sr, Eu, La, Sc, Y, and lanthanoid elements; and includes at least Eu as well as Ca and/or Sr). 1. A phosphor comprising a JEM crystal activated with Eu and represented by MAl(Si , Al)(O , N)(wherein an M element is one or two or more kinds of elements selected from a group consisting of Ca , Sr , Eu , La , Sc , Y , and lanthanoid elements; the M element includes at least Eu; and the M element includes Ca and/or Sr).2. The phosphor according to claim 1 , wherein the phosphor is represented by CaSrEuLaSiAlONand the parameters: a claim 1 , b claim 1 , c claim 1 , d claim 1 , e claim 1 , f claim 1 , g claim 1 , and h (wherein a+b+c+d+e+f+g+h=1) satisfy condition:{'br': None, 'i': 'a+b+d≦', '0.02≦0.06,'}{'br': None, 'i': 'c≦', '0.0003≦0.03,'}{'br': None, 'i': 'e≦', '0.1≦0.5,'}{'br': None, 'i': 'f≦', '0.02≦0.3,'}{'br': None, 'i': 'g≦', '0.02≦0.3,'}{'br': None, 'i': 'h≦', '0.3≦0.6, and'}{'br': None, 'i': 'a+b.', '0<'}3. The phosphor according to wherein the JEM crystal activated with Eu is represented by{'sub': t', 'u', 'x', '6-z', 'z', '10-z−t−u', 'z+t+u, '((Ca), Eu, La)AlSiAlNO;'}{'sub': t', 'u', 'x', '6-z', 'z', '10-z−t−u', 'z+t+u, '((Sr), Eu, La)AlSiAlNO, or'}{'sub': t', 'u', 'x', '6-z', 'z', '10-z−t−u', 'z+t+u, 'claim-text': [{'br': None, 'i': 't<', '0.3≦1,'}, {'br': None, 'i': 'u≦', '0.005≦0.2, and'}, {'br': None, 'i': 'z≦', '0.5≦2.'}], '((Ca, Sr), Eu, La)AlSiAlNO, and parameters: t, u, x, and z (wherein t+u+x=1) satisfy condition4. The phosphor according to wherein the parameter x satisfies ...

InP-based NANOCLUSTER, AND METHOD OF PREPARING InP-based NANOPARTICLE

The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof. 1. InP-based nanoclusters comprising indium and phosphorus , and further comprising zinc , chlorine , or a combination thereof.2. The InP-based nanoclusters of comprising the zinc.3. The InP-based nanoclusters of exhibiting a maximum absorption peak at a wavelength of about 393 nanometers.4. The InP-based nanoclusters of claim 3 , wherein a half-width at half-maximum of the maximum emission peak is less than or equal to about 15 nanometers.5. The InP-based nanoclusters of exhibiting a maximum absorption peak at a wavelength of about 408 nanometers.6. The InP-based nanoclusters of claim 5 , wherein a half-width at half-maximum of the maximum emission peak is less than or equal to about 20 nanometers.7. The InP-based nanoclusters of exhibiting a maximum absorption peak at the wavelength of about 360 nanometers.8. The InP-based nanoclusters of claim 7 , wherein a half-width at half-maximum of the maximum emission peak is less than or equal to about 30 nanometers.9. The InP-based nanoclusters of claim 2 , wherein the zinc is present in an amount of about 10 mole percent to about 40 mole percent relative to moles of indium.10. The InP-based nanoclusters of comprising chlorine.11. The InP-based nanoclusters of exhibiting a maximum absorption peak at the wavelength of about 399 nanometers.12. The InP-based nanoclusters of claim 11 , wherein a half-width at half-maximum of the maximum emission peak is less than or equal to about 10 nanometers.13. The InP-based nanoclusters of exhibiting a maximum absorption peak at the wavelength of about 360 nanometers.14. The InP-based nanoclusters of comprising zinc and chlorine claim 1 , wherein the chlorine is present in an amount of ...

PHOSPHOR AND LIGHT-EMITTING EQUIPMENT USING PHOSPHOR

Phosphors include a CaAlSiNfamily crystal phase, wherein the CaAlSiNfamily crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb. 1. Light-emitting equipment , comprising at least one light source , the light source comprising at least one light-emitting source and a phosphor , wherein:the light-emitting source emits a light having a wavelength of 330 to 500 nm; andthe phosphor comprises an inorganic compound which is a composition containing at least M Element, A Element, D Element, E Element, and X Element;the M Element is one or two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb;the A Element is one or two or more elements selected from the group consisting of divalent metal elements other than M Element;the D Element is one or two or more elements selected from the group consisting of tetravalent metal elements;the E Element is one or two or more elements selected from the group consisting of trivalent metal elements;the X Element is one or two or more elements selected from the group consisting of O, N, and F;the M Element comprises at least Eu;the A Element comprises at least Ca or at least Ca and Sr;the D Element comprises at least Si;the E Element comprises at least Al;the X Element comprises at least N; and {'br': None, 'sub': a', 'b', 'c', 'd', 'e, 'MADEX'}, 'the inorganic compound is a composition given bywhere:a+b=1;0.00001≤a≤0.1;0.5≤c≤1.8;0.5≤d≤1.8;0.8×(2/3+4/3×c+d)≤e; ande≤1.2×(2/3+4/3×c+d).2. The light-emitting equipment according to claim 1 , wherein the light-emitting source emits a light having a wavelength of 420 to 500 nm.3. The light-emitting equipment according to claim 2 , wherein the phosphor further comprises at least one of:a phosphor having an emission peak at a wavelength of 500 to 570 nm; anda phosphor having an emission peak at a wavelength of 550 to 600 nm.4. The light-emitting equipment according ...

RED PHOSPHOR, WHITE LIGHT EMITTING DEVICE AND LIGHTING APPARATUS

A red phosphor contains a nitride having a formula of SrMgSiN:Eu, in which x, y, z, and w satisfy the relationships 0.5≦x≦2, 2.5≦y≦3.5, 0.5≦z≦1.5 and 0 Подробнее

SURFACE-MODIFIED PHOSPHOR AND LIGHT EMITTING DEVICE

A surface-modified phosphor includes: a phosphor matrix represented by Chemical Formula 1, 1. A surface-modified phosphor comprising: {'br': None, 'sub': 2', '6, 'sup': '4+', 'KSiF:Mn; and \u2003\u2003Chemical Formula 1'}, 'a phosphor matrix comprising a compound represented by Chemical Formula 1'}a nano-sized phosphor disposed on the phosphor matrix.2. The surface-modified phosphor of claim 1 , wherein the phosphor matrix has a particle size ranging from about 2 micrometers to about 200 micrometers.3. The surface-modified phosphor of claim 1 , wherein the phosphor matrix has a crack claim 1 , andwherein the nano-sized phosphor is disposed in the crack.4. The surface-modified phosphor of claim 1 , wherein the nano-sized phosphor has a particle size ranging from about 20 nanometers to about 1000 nanometers.5. The surface-modified phosphor of claim 1 , wherein the nano-sized phosphor emits a color which is the same as a color emitted by the phosphor matrix.6. The surface-modified phosphor of claim 1 , wherein the nano-sized phosphor comprises at least a compound represented by any one of Chemical Formulas 2 and 3 claim 1 ,{'br': None, 'sub': 2', '3, 'sup': '4+', 'LiTiO:Mn, and \u2003\u2003Chemical Formula 2'}{'br': None, 'sup': '2+', 'CaAlSiN:Eu. tm Chemical Formula 3'}7. A method of manufacturing a surface-modified phosphor claim 1 , the method comprising:mixing an alcohol and a phosphor matrix and agitating the mixture to obtain first agitated material;mixing a nano-sized phosphor and the first agitated material and agitating the mixture to obtain second agitated material;adding a solvent comprising Zn to the second agitated material and agitating the mixture to obtain third agitated material; andremoving the solvent from the third agitated material to manufacture the surface-modified phosphor.8. The method of claim 7 , wherein the phosphor matrix comprises a compound represented by Chemical Formula 1{'br': None, 'sub': 2', '6, 'sup': '4+', 'KSiF:Mn. \u2003\ ...

UNIFORMLY ENCAPSULATED NANOPARTICLES AND USES THEREOF

Disclosed is a composite particle including a plurality of nanoparticles encapsulated in an inorganic material, wherein the plurality of nanoparticles is uniformly dispersed in the inorganic material. Also disclosed is relates to a light emitting material, a support supporting at least one composite particle and/or a light emitting material and an optoelectronic device including at least one composite particle and/or a light emitting material. 1132. A composite particle () comprising a plurality of nanoparticles () encapsulated in an inorganic material () ,{'b': 3', '2, 'wherein the plurality of nanoparticles () is uniformly dispersed in said inorganic material ().'}21333. The composite particle () according to claim 1 , wherein each nanoparticle () of the plurality of nanoparticles () is spaced from its adjacent nanoparticle () by an average minimal distance.31. The composite particle () according to claim 1 , wherein the average minimal distance is at least 2 nm.4132. A composite particle () comprising a plurality of nanoparticles () encapsulated in an inorganic material () claim 1 ,{'b': '2', 'wherein the inorganic material () is a thermally conductive material.'}512. The composite particle () according to claim 4 , wherein the inorganic material () has a thermal conductivity at standard conditions ranging from 0.1 to 450 W/(m·K).6132. A composite particle () comprising a plurality of nanoparticles () encapsulated in an inorganic material () claim 4 ,{'b': '1', 'wherein the composite particle () is impermeable to molecular species, gas or liquid.'}711. The composite particle () according to claim 6 , wherein the composite particle () has an intrinsic permeability to fluids less or equal to 10cm.8122. The composite particle () according to claim 1 , wherein the inorganic material () limits or prevents the diffusion of outer molecular species or fluids (liquid or gas) into said inorganic material ().913. The composite particle () according to claim 1 , wherein the ...

COMPOSITION, QUANTUM DOT-POLYMER COMPOSITE, AND DISPLAY DEVICE INCLUDING SAME

A composition including a quantum dot, a dispersing agent for dispersing the quantum dot, a polymerizable monomer including a carbon-carbon double bond, an initiator, a hollow metal oxide particulate, and a solvent, and a quantum dot-polymer composite manufactured from the composition. 1. A composition comprisinga quantum dot,a dispersing agent for dispersing the quantum dot,a polymerizable monomer comprising a carbon-carbon double bond,an initiator,a hollow metal oxide particulate, anda solvent.2. The composition of claim 1 , wherein the hollow metal oxide particulate comprises a titanium oxide claim 1 , a silicon oxide claim 1 , a barium oxide claim 1 , a zinc oxide claim 1 , a zirconium oxide claim 1 , or a combination thereof.3. The composition of claim 1 , wherein the hollow metal oxide particulate comprises TiO claim 1 , SiO claim 1 , BaTiO claim 1 , BaTiO claim 1 , ZnO claim 1 , ZrO claim 1 , or a combination thereof.4. The composition of claim 1 , wherein an average particle size of the hollow metal oxide particulate ranges from about 200 nanometers to about 500 nanometers.5. The composition of claim 1 , wherein an average particle size of the hollow metal oxide particulate ranges from about 250 nanometers to about 450 nanometers.6. The composition of claim 1 , wherein an average size of a hollow portion in the hollow metal oxide particulate is greater than or equal to about 10 nanometers and less than about 500 nanometers.7. The composition of claim 1 , wherein an average size of a hollow portion in the hollow metal oxide particulate is greater than or equal to about 30 nanometers and less than or equal to about 450 nanometers.8. The composition of claim 1 , wherein the quantum dot comprises a Group II-VI compound claim 1 , a Group III-V compound claim 1 , a Group IV-VI compound claim 1 , a Group IV element or compound claim 1 , a Group I-III-VI compound claim 1 , a Group I-II-IV-VI compound claim 1 , or a combination thereof.9. The composition of claim 1 , ...

Phosphor Particles with a Protective Layer, and Method for Producing the Phosphor Particles with the Protective Layer

Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.

Phosphor, Method of Producing the Same, and Light Emitting Apparatus

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): EuSiAlON, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MIEuSiAlONor a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MIIEu)MIIISiN, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency. 1. A phosphor comprising a yellow emitting phosphor having an α-SiAlON crystal structure comprising Eu , Si , Al , O , N , and at least one element selected from the group consisting of Li , Na , K , Cs , Mg , Ca , Sr , and Ba ,wherein the yellow emitting phosphor has a reflectance of 95% or larger in a region of visible light having wavelengths longer than a peak wavelength of the yellow emitting phosphor, andwherein the yellow emitting phosphor has an average particle diameter from 2 micrometers to 8 micrometers.2. A light converter claim 1 , comprising the phosphor of .3. A light emitting apparatus comprising:a light emitting device that emits primary light; and{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'the light converter of .'}4. The light emitting apparatus according to claim 3 , wherein the light emitting device is a gallium nitride-based semiconductor device claim 3 , and primary light from the light-emitting device has a wavelength ranging from 430 to 480 nm.5. A liquid crystal display comprising a backlight source comprising the light ...

Phosphor and led light emitting device using the same

An LED light emitting device is provided that has high color rendering properties and is excellent color uniformity and, at the same time, can realize even luminescence unattainable by conventional techniques. A phosphor having a composition represented by formula: (Sr 2-X-Y-Z-ω Ba X Mg Y Mn Z Eu ω )SiO 4 wherein x, y, z, and ω are respectively coefficients satisfying 0.1<x<1, 0<y<0.5, 0<z<0.1, y>z, and 0.01<ω<0.2 is provided. The phosphor is used in combination with ultraviolet and blue light emitting diodes having a luminescence peak wavelength of 360 to 470 nm to form an LED light emitting device.

Phosphor and light emitting device having the same

Disclosed are a phosphor and a light emitting device including the same. The light emitting device includes a light emitting chip, a phosphor layer on the light emitting chip, and a phosphor added into the phosphor layer to absorb a light emitted from the light emitting chip and emit a central wavelength having a first blue color. The phosphor has a composition formula of La x O y Si 6 Al 4 N 12 :Ce 3+ z , a range of the x is 2≦x≦8, and a range of the y is 3≦y≦12.

QUANTUM DOT, LIGHTING EMITTING ELEMENT AND DISPLAY DEVICE INCLUDING THE SAME

A quantum dot includes a first core layer and a shell layer surrounding the first core layer, wherein a difference in lattice constants between the first core layer and the shell layer is controlled to be 3% or less. The quantum dot according to an embodiment may be applied to a light emitting element and a display device, thereby providing improved luminous efficiency. 1. A quantum dot comprising:a first core layer; anda shell layer around the first core layer,wherein a difference in lattice constants between the first core layer and the shell layer is 3% or less.2. The quantum dot of claim 1 , whereinthe first core layer comprises a Group 13 element and a Group 15 element, andthe shell layer comprises a Group 12 element and a Group 16 element.3. The quantum dot of claim 1 , further comprising a second core layer between the first core layer and the shell layer claim 1 , the second core layer being around the first core layer.4. The quantum dot of claim 3 , whereinthe second core layer comprises a Group 13 element and a Group 15 element, andthe first core layer comprises all elements comprised in the second core layer and further comprises at least one Group 13 element.5. The quantum dot of claim 3 , wherein the first core layer is greater in thickness than the second core layer.6. The quantum dot of claim 5 , whereinthe first core layer is about 1 nm to about 2 nm in thickness, andthe second core layer is about 0 nm to about 1 nm in thickness.7. The quantum dot of claim 3 , wherein a difference in lattice constants between the shell layer and the second core layer is 4% or greater.8. The quantum dot of claim 3 , wherein the shell layer is greater in thickness than the second core layer.9. The quantum dot of claim 1 , wherein the shell layer is 1 nm or greater in thickness.10. The quantum dot of claim 1 , wherein the shell layer comprises a compound represented by Formula 3 below:{'br': None, 'sub': z', '1-z, 'EFF′\u2003\u2003Formula 3'}wherein, in Formula 3 above, ...

LIGHT EMITTING DEVICE AND LED LIGHT BULB

A light emitting device includes: a first white light source which includes N pieces of first white light emitting diodes and emits a first white light; and a second white light source which includes M pieces of second white light emitting diodes and a first resistance element electrically connected in series to the second white light emitting diodes and having a first resistance value, is electrically connected in parallel to the first white light source, and emits a second white light, the light emitting device emitting a mixed white light of the first white light and the second white light. The drive voltage of the first white light source is higher than a drive voltage of the second white light source, and a color temperature of the mixed white light is higher as a total luminous flux of the mixed white light is higher. 1. A light emitting device comprising:a first white light source, including N pieces is a natural number equal to or more than 2) of first white light emitting diodes electrically connected in series to one another in a forward direction, and emitting a first white light having a first color temperature; anda second white light source, including M pieces (M is a natural number less than N) of second white light emitting diodes electrically connected in series to one another in a forward direction and a first resistance element electrically connected in series to the second white light emitting diodes and having a first resistance value, the second white light source being electrically connected in parallel to the first white light source, and emitting a second white light having a second color temperature lower than the first color temperature,the device emitting a mixed white light of the first white light and the second white light,wherein a drive voltage of the first white light source is higher than a drive voltage of the second white light source, andwherein a color temperature of the mixed white light is higher as a total luminous flux of ...

Method for Producing Luminescent Particles with a Protective Layer and Luminescent Particles Having a Protective Layer

A method for producing phosphor particles with at least one first protective layer and a phosphor particles having at least one protective layer are disclosed. In an embodiment, a method includes providing phosphor particles and applying at least one first protective layer to the surface of the phosphor particles, wherein the at least of first protective layer include depositing a first starting compound by a first atomic layer deposition on the surface of the phosphor particles and depositing a second starting compound by a second atomic layer deposition on the surface of the phosphor particles. 114-. (canceled)15. A method for producing phosphor particles with at least one first protective layer , the method comprising:providing the phosphor particles; and depositing a first starting compound by a first atomic layer deposition on the surface of the phosphor particles; and', 'depositing a second starting compound by a second atomic layer deposition on the surface of the phosphor particles., 'applying the at least one first protective layer to a surface of the phosphor particles, wherein the at least of first protective layer comprises16. The method according to claim 15 , wherein the first starting compound comprises organometallic compounds and metal halides claim 15 , and wherein the second starting compound comprises HO claim 15 , HS claim 15 , NHand O.17. The method according to claim 16 , wherein the metal of the organometallic compound or of the metal halide is selected from the group consisting of boron claim 16 , aluminum claim 16 , silicon claim 16 , tin claim 16 , zinc claim 16 , titanium claim 16 , zirconium claim 16 , tantalum claim 16 , niobium and hafnium.18. The method according to claim 15 , wherein the first starting compound comprises MCl claim 15 , MBr claim 15 , M(CH) claim 15 , M(CH—CH) claim 15 , M(CH—CH—CH) claim 15 , M(OCH) claim 15 , M(OCH—CH)or M(OCH—CH—CH) claim 15 , and wherein M is one of B claim 15 , Al claim 15 , Si claim 15 , Sn ...

Semiconductor nanoparticles and core/shell semiconductor nanoparticles

An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

LIGHT SOURCE UNIT, AND DISPLAY AND LIGHTING DEVICE EACH INCLUDING SAME

A light source unit includes: a light emitting body; and a color conversion film including an organic luminescent material configured to convert at least a part of incident light incident from the light emitting body into light having a wavelength longer than a wavelength of the incident light. The light emitting body includes a light source, and a layer including a green phosphor and formed on the light source. The organic luminescent material has a light emission wavelength peak in a wavelength region of 580 nm or longer and 750 nm or shorter. 1. A light source unit , comprising:a light emitting body; anda color conversion film including an organic luminescent material configured to convert at least a part of incident light incident from the light emitting body into light having a wavelength longer than a wavelength of the incident light, a light source, and', 'a layer including a green phosphor and formed on the light source, and, 'wherein the light emitting body Includes'}wherein the organic luminescent material has a light emission wavelength peak in a wavelength region of 580 nm or longer and 750 nm or shorter.2. The light source unit according to claim 1 , wherein the green phosphor Is an Eu-activated β-sialon phosphor.3. The light source unit according to claim 1 , wherein the green phosphor has a light emission wavelength peak in a range of 525 nm or longer and 545 nm or shorter.4. The light source unit according to claim 1 , wherein a laminated film including eleven or more of alternating layers of different thermoplastic resins is provided between the light emitting body and the color conversion film.5. The light source unit according to claim 4 , wherein the laminated film has a reflectivity of 70% or higher when light having a wavelength of 580 nm or longer and 750 nm or shorter enters the laminated film at an Incident angle of 60°.6. The light source unit according to claim 4 , wherein the laminated film has a reflectivity of 20% or lower when light ...

NITROXIDE FLUORESCENT POWDER AND METHOD FOR PREPARING SAME, NITROXIDE ILLUMINANT, AND LUMINESCENT DEVICE

The present invention discloses a nitroxide fluorescent powder comprising an inorganic compound containing M, A, B, O, N, and R elements; in which the M element is at least one of Ca, Sr, Ba, Mg, Li, Na, and K, the A element is at least one of B, Al, Ga, and In, the B element is at least one of C, Si, Ge, and Sn, the R element is at least one of Ce, Eu, Lu, Dy, Gd, and Ho, characterized in that the inorganic compound forms a crystal in a crystalline phase, and the oxygen atom content in the crystal in a crystalline phase is in an increasing structural distribution from a core to surface of the crystal. The nitroxide fluorescent powder and the nitroxide illuminant of the present invention have the advantages of good chemical stability, good aging and light decay resistance, and high luminescent efficiency, and are useful for various luminescent devices. The preparation method of the present invention is easy and reliable and useful for industrial mass production. 1. A nitroxide fluorescent powder comprising an inorganic compound containing M , A , B , O , N , and R elements; in which the M element is at least one of Ca , Sr , Ba , Mg , Li , Na , and K , the A element is at least one of B , Al , Ga , and In , the B element is at least one of C , Si , Ge , and Sn , the R element is at least one of Ce , Eu , Lu , Dy , Gd , and Ho , wherein the inorganic compound forms a crystal in a crystalline phase , and the oxygen atom content in the crystal in a crystalline phase is in an increasing structural distribution from a core to surface of the crystal.2. The nitroxide fluorescent powder of claim 1 , wherein the increasing structural distribution means that an inner core zone claim 1 , a transition zone claim 1 , and a crystal surface layer zone of the crystal in a crystalline phase are respectively formed depending on the distribution of the oxygen atom content in the crystal in a crystalline phase; the oxygen atom content in the inner core zone is in a gently increasing ...

SYSTEM AND METHOD FOR SELECTED PUMP LEDS WITH MULTIPLE PHOSPHORS

An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency. 1. A light emitting system for emitting white light , said light emitting system comprising:a first set of LEDs comprising at least one first LED and emitting a first light having a first peak wavelength in a range 405-430 nm,a second set of LEDs comprising at least one second LED and emitting a second light having a second peak wavelength which is longer than the first peak wavelength; anda wavelength-converting material, configured to substantially absorb a portion of light from one of the first or second sets of LEDs and convert it to a third light, without substantially absorbing light from the other set of LEDs;wherein said white light comprise at least a portion of said first, second and third lights.220-. (canceled) This application is a continuation of U.S. application Ser. No. 15/077,387 filed Mar. 22, 2016, now allowed, which is a continuation of U.S. application Ser. No. 13/211,145 filed on Aug. 16, 2011, now U.S. Pat. No. 9,293,667 which claims the benefit under 35 U.S.C. § 119(e) of U.S. Application No. 61/502,212 filed on Jun. 28, 2011, all of which are hereby incorporated by reference in their entireties.This invention is directed to lighting systems, and in particular, to light emitting diodes (LED) pump light with multiple phosphors.Solid state lighting is known. Solid state lighting relies upon semiconductor materials to produce light, e.g., by light emitting diodes. Red LEDs are known and use Aluminum Indium Gallium Phosphide or AlInGaP semiconductor materials, among others. Most recently, Shuji Nakamura pioneered the use of InGaN materials to produce LEDs emitting blue light. The blue LEDs led to other innovations such as solid state white ...

COMPOSITION

The present invention relates to a composition comprising a nanoparticle and a process for preparation thereof. 1. A process for preparing a composition comprising;{'sup': st', 'st, 'a) mixing at least a 1organic compound with a semiconducting light emitting nanoparticle comprising a core, optionally the nanoparticle comprises at least one shell layer, to get a 1mixture, optionally with another material,'}{'sup': 'st', 'claim-text': {'br': None, 'sub': 'n', 'A(B)C\u2003\u2003(I)'}, 'wherein said 1organic compound is represented by following chemical formula (I),'}where A represents a first end group; B is a divalent bond; C is a second end group; n is 0 or 1.2. A process of claim 1 , wherein the amount of the 1organic compoundis in the range from 0.01 wt. % to 100 wt. % based on the total amount of the inorganic part of the semiconducting light emitting nanoparticle, including the range from 10 wt. % to 50 wt. %, particularly including the range from 20 wt. % to 30 wt. %.3. A process according to claim 1 , wherein the 1organic compound is represented by following chemical formula (I);{'br': None, 'sup': 1', '2', '3, 'sub': 'n', 'XRR(R)'}wherein X is selected from P, O, S, or N;n is 0 in case X is O or S, n is 1 in case X is P or N;{'sup': 1', 'a', 'a', 'a', 'a', 'a', 'a', 'a', 'a', 'a', 'a, 'sub': 2', '2', '2', '2', '2, 'Ris selected from one or more members of the group consisting of a hydrogen atom, a linear alkyl group or alkoxyl group having 1 to 40 carbon atoms, including 1 to 25 carbon atoms, particularly including 1 to 15 carbon atoms, a branched alkyl group or alkoxyl group having 3 to 40 carbon atoms, including 3 to 25 carbon atoms, particularly including 3 to 15 carbon atoms, a cycloalkane group having 3 to 40 carbon atoms, including 3 to 25 carbon atoms, particularly including 3 to 15 carbon atoms, an alkenyl group having 2 to 40 carbon atoms, including 2 to 25 carbon atoms, an aryl group having 3 to 40 carbon atoms, including 3 to 25 carbon atoms, a ...

METHOD FOR PRODUCING QUANTUM DOT DISPERSION AND QUANTUM DOT DISPERSION

Provided are: a method for producing a quantum dot dispersion enabling formation of a substrate having quantum dots or a film comprising quantum dots which exhibits desired quantum dots, when the quantum dot dispersion is used for dispersing quantum dots on a surface of the substrate or preparing a composition for producing the film containing quantum dots, and a quantum dot dispersion that can be suitably produced by the above method. The quantum dot dispersion is produced by using quantum dots containing chalcogenide as a material of surface and dispersing the quantum dots (A) in the dispersion medium (B) comprising an organic solvent (B1) comprising a chalcogen element. 1. A method for producing a quantum dot dispersion in which quantum dots (A) are dispersed in a dispersion medium (B) , the method comprising:dispersing the quantum dots (A) in the dispersion medium (B),wherein a material of surface of the quantum dots (A) comprises a chalcogenide,a ligand can bound to the surface of the quantum dots (A),the dispersion medium (B) comprises an organic solvent (B1) comprising a chalcogen element.2. The method for producing the quantum dot dispersion according to claim 1 ,wherein the dispersing the quantum dots (A) in the dispersion medium (B) comprises:preparing a preliminary dispersion containing the quantum dots (A) and a preliminary dispersion medium (pB), andreplacing the preliminary dispersion medium (pB) contained in the preliminary dispersion with the dispersion medium (B).3. The method for producing the quantum dot dispersion according to claim 2 ,wherein the replacing comprises:removing at least a part of the preliminary dispersion medium (pB) from the preliminary dispersion,adding the dispersion medium (B) to the mixture containing the quantum dots (A) and the remaining preliminary dispersion medium (pB), or quantum dots (A) after removal of the preliminary dispersion medium (pB).4. The method for producing the quantum dot dispersion according to claim 3 , ...

Method for Producing a Powdery Precursor Material, Powdery Precursor Material and Use Thereof

A method can be used for producing a powdery precursor material of the following general composition I or II or III or IV: I: (CaSr)AlSiN:X1 II: (CaSrLi)AlSi(NF)3:X2 III: ZAlSiN: X3 IV: (ZLi)AlSi(NF): X4. The method includes A) producing a powdery mixture of starting materials, wherein the starting materials comprise ions of the aforementioned compositions I and/or II and/or III and/or IV, B) annealing the mixture under a protective gas atmosphere, subsequent milling. In method step A), at least one silicon nitride having a specific area of greater than or equal to 5 m/g and smaller than or equal to 100 m/g is selected as starting material. The annealing in method step B) is carried out at a temperature of less than or equal to 1550° C. 118-. (canceled)19. A process for producing a pulverulent precursor material of the general composition I or II or III or IV:{'br': None, 'sub': y', '1-y', '3, '(CaSr)AlSiN:X1\u2003\u2003I'}{'br': None, 'sub': b', 'a', '1-a-b', '1-c', 'c', '3, '(CaSrLi)AlSi(NF):X2\u2003\u2003II'}{'br': None, 'sub': 5-δ', '4-2δ', '8+2δ', '18, 'ZAlSiN:X3\u2003\u2003III'}{'br': None, 'sub': 1-d', 'd', '5-δ', '4-2δ', '8+2δ', '1-x', 'x', '18, '(ZLi)AlSi(NF):X4\u2003\u2003IV'}wherein X1 and X2 and X3 and X4 are each one activator or a combination of two or more activators;{'sup': 2+', '4+, 'wherein the activator is selected from the group consisting of the lanthanoids, Mn and Mn, and combinations thereof;'}wherein Z is selected from the group consisting of Ca, Sr, Mg, and combinations thereof;wherein: 0≦y≦1 and 0≦a≦1 and 0≦b≦1 and 0 Подробнее

Vapor-phase curing catalysis and passivation of siloxane resins in led applications

The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

ELECTRONIC DEVICE AND METHOD FOR PRODUCING SAME

The present invention relates to a fluorescent quantum dot-containing electronic device including a protective sheet. The protective sheet includes a multilayer structure (W) including a base (X) and a layer (Y) stacked on the base (X), the layer (Y) contains a reaction product (D) of an aluminum-containing compound (A) and a phosphorus compound (B), and the reaction product (D) has an average particle diameter of 5 to 50 nm. 1. A fluorescent quantum dot-containing electronic device , comprising a protective sheet , wherein:the protective sheet comprises a multilayer structure (W) comprising a base (X) and a layer (Y) stacked on the base (X);the layer (Y) comprises a reaction product (D) of an aluminum-containing compound (A) and a phosphorus compound (B); andthe reaction product (D) has an average particle diameter of 5 to 50 nm.2. The electronic device according to claim 1 , comprising a layer containing fluorescent quantum dots claim 1 , wherein the protective sheet is disposed on one side or both sides of the layer.3. The electronic device according to claim 1 , wherein the phosphorus compound (B) is an inorganic phosphorus compound (BI).4. The electronic device according to claim 1 , wherein the aluminum-containing compound (A) is an aluminum-containing metal oxide (Aa).5. The electronic device according to claim 1 , wherein the average particle diameter of the reaction product (D) is 20 to 40 nm.6. The electronic device according to claim 1 , wherein a moisture permeability at 40° C. and 90% RH is 1.0 g/(m·day) or less.7. The electronic device according to claim 1 , wherein the base (X) comprises a thermoplastic resin film.8. The electronic device according to claim 1 , wherein the layer (Y) comprises a polymer (F) having at least one functional group selected from the group consisting of a carbonyl group claim 1 , a hydroxy group claim 1 , a carboxyl group claim 1 , a carboxylic anhydride group claim 1 , and a salt of a carboxyl group.9. The electronic device ...

NITRIDE FLUORESCENT MATERIAL, METHOD OF PRODUCING NITRIDE FLUORESCENT MATERIAL AND LIGHT EMITTING DEVICE

Provided is a method of producing a nitride fluorescent material containing silicon nitride particles containing Eu, at least one alkaline earth metal selected from the group consisting of Mg, Ca, Sr, and Ba, Al, and fluorine in a composition of the silicon nitride particles. The method includes heat treating a raw material mixture containing an Eu source, a source of the alkaline earth metal, an Al source, an Si source, and an alkaline earth metal fluoride containing at least one selected from the group consisting of Mg, Ca, Sr, and Ba, wherein a molar content ratio of fluorine atom to Al is from 0.02 to 0.3. 1. A method of producing a nitride fluorescent material containing silicon nitride particles containing Eu , at least one alkaline earth metal selected from the group consisting of Mg , Ca , Sr , and Ba , Al , and fluorine in a composition of the silicon nitride particles , the method comprising:heat treating a raw material mixture containing an Eu source, a source of the alkaline earth metal, an Al source, an Si source, and an alkaline earth metal fluoride containing at least one selected from the group consisting of Mg, Ca, Sr, and Ba, wherein a molar content ratio of fluorine atom to Al ranges from 0.02 to 0.3.2. The method according to claim 1 , wherein the molar content ratio of fluorine atom to Al in the raw material mixture is from 0.02 to 0.27.3. The method according to claim 1 , wherein the silicon nitride particles have a composition represented by formula (I):{'br': None, 'sup': 'a', 'sub': s', 't', 'u', 'v', 'w', 'x', 'y', 'z, 'MSrEuSiAlNOF\u2003\u2003(I)'}{'sup': 'a', 'wherein Mis at least one element selected from the group consisting of Ca, Ba and Mg, and s, t, u, v, w, x, y, and z satisfy 0 Подробнее

NITRIDE FLUORESCENT MATERIAL AND LIGHT EMITTING DEVICE

A nitride fluorescent material containing at least one element selected from the group consisting of Ca, Sr, Ba and Mg, at least one element selected from the group consisting of Li, Na and K, at least one element selected from the group consisting of Eu, Ce, Tb and Mn, Al and N is provided, wherein when the maximum value of absorbance in 450 cmor more and less than 900 cmis taken as 1 in an FT-IR spectrum, an integrated value Z1 of a domain surrounded by a base line A connecting absorbance values at 1,200 cmand 1,600 cmand an absorbance spectrum of 1,200 cmor more and less than 1,600 cmis 4.0 or less, and/or an integrated value Z2 of a domain surrounded by a base line B connecting absorbance values at 2,700 cmand 3,680 cmand an absorbance spectrum of 2,700 cmor more and less than 3,680 cmis 5.0 or less. 1. A nitride fluorescent material having a composition comprising:at least one element selected from the group consisting of Ca, Sr, Ba and Mg;at least one element selected from the group consisting of Li, Na and K;at least one element selected from the group consisting of Eu, Ce, Tb and Mn;Al; andN,{'sup': −1', '−1', '−1', '−1', '−1', '−1', '−1', '−1', '−1', '−1, 'wherein when the maximum value of absorbance in a wavenumber domain of 450 cmor more and less than 900 cmis taken as 1 in an infrared absorption spectrum of the nitride fluorescent material measured by a Fourier transform infrared spectrometer, an integrated value Z1 of a domain surrounded by a base line A that is a straight line connecting absorbance values at both ends of a wavenumber domain of from 1,200 cmto 1,600 cmand an absorbance spectrum in a wavenumber domain of 1,200 cmor more and less than 1,600 cmis 4.0 or less, and/or an integrated value Z2 of a domain surrounded by a base line B that is a straight line connecting absorbance values at both ends of a wavenumber domain of from 2,700 cmto 3,680 cmand an absorbance spectrum in a wavenumber domain of 2,700 cmor more and less than 3,680 cmis 5.0 ...

Phosphor, Method for Producing a Phosphor and Use of a Phosphor

A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element A1, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, A1 includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SrCa)SiAlN. 1. A phosphor including an inorganic substance which includes , in its composition , at least an element D , an element A1 , an element AX , an element SX and an element NX whereD comprises one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb,A1 comprises one, two or more elements selected from the group consisting of divalent metals not included in D,SX comprises one, two or more elements selected from the group consisting of tetravalent metals,AX comprises one, two or more elements selected from the group consisting of trivalent metals, andNX comprises one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F,{'sub': a', '1−a', '2', '2', '6', '1, 'o': {'@ostyle': 'single', '1'}, 'wherein the inorganic substance has the same crystal structure as Sr(SrCa)SiAlNand crystallizes in space groups P1, P2, P or P2.'}2. The phosphor according to claim 1 , wherein the inorganic substance crystallizes in the monoclinic P2space group.3. The phosphor according to claim 1 , wherein the inorganic substance is described by the following formula:{'br': None, ...

NITRIDE FLUORESCENT MATERIAL, METHOD FOR PRODUCING THE SAME, AND LIGHT EMITTING DEVICE

A method for producing a nitride fluorescent material having high emission luminance can be provided. The method includes heat-treating a raw material mixture containing silicon nitride, silicon, an aluminium compound, a calcium compound, and a europium compound. 1. A method for producing a nitride fluorescent material , the method comprising heat-treating a raw material mixture comprising silicon nitride , silicon , an aluminium compound , a calcium compound , and a europium compound.2. The method according to claim 1 , wherein the aluminium compound comprises aluminium nitride.3. The method according to claim 1 , wherein the calcium compound comprises calcium nitride.4. The method according to claim 1 , wherein the europium compound comprises europium oxide.5. The method according to claim 1 , wherein the raw material mixture is heat-treated at 1200° C. or more.6. The method according to claim 1 , wherein the raw material mixture is heat-treated at from 1900° C. to 2050° C.7. The method according to claim 1 , wherein content of silicon is from 10% by weight to 85% by weight relative to the total amount of silicon nitride and silicon in the raw material mixture.8. The method according to claim 1 , wherein content of silicon is from 30% by weight to 80% by weight relative to the total amount of silicon nitride and silicon in the raw material mixture.9. The method according to claim 1 , wherein content of oxygen atom contained in the silicon nitride is from 0.3% by weight to less than 2% by weight.10. The method according to claim 1 , wherein the nitride fluorescent material has a specific surface area by BET method of from 0.05 cm/g to less than 0.3 cm/g.11. The method according to claim 1 , wherein the nitride fluorescent material has an average particle diameter of from 15 μm to 30 μm.12. The method according to claim 1 , wherein the nitride fluorescent material has a specific surface area by BET method of from 0.1 cm/g to 0.16 cm/g claim 1 , and the nitride ...

ILLUMINATION DEVICE

To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%. 1. An illumination device comprising:a holding case;a plurality of light emitting device disposed at the holding case, each of the plurality of light emitting devices comprises a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and a phosphor; anda diffusion plate disposed over the plurality of light emitting devices and diffusing the light from the plurality of light emitting devices;{'sup': '4+', 'wherein the phosphor comprises a red emitting phosphor containing Mn as an activated element and a green emitting phosphor.'}2. An illumination device according to claim 1 , wherein the red emitting phosphor containing at least one element selected from the group consisting of alkali metal elements claim 1 , alkaline earth metal elements and Zn claim 1 , at least one element selected from the group consisting of Si claim 1 , Ti claim 1 , Zr claim 1 , Hf claim 1 , Sn claim 1 , Al claim 1 , Ga and In claim 1 , and at least one member selected from halogen elements.3. An illumination device according to claim 1 , wherein the red emitting phosphor having a chemical composition represented by the following formula (1′):{'sup': I′', 'IV′', 'I′', 'IV′', '4+, 'sub': 2', ' ...

METHOD OF IMPROVING PERFORMANCE OF DEVICES WITH QDS COMPRISING THIN METAL OXIDE COATINGS

The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core/shell and a thin metal oxide on the outer shell of the nanostructure. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures. 1. A nanostructure comprising a core/shell nanostructure and a metal oxide on the outer shell of the nanostructure , wherein the outer shell is less than 1 nm thick.2. (canceled)3. The nanostructure of claim 1 , wherein the core comprises InP.4. (canceled)5. The nanostructure of claim 1 , wherein the shell has a thickness of between about 0.2 nm and about 1 nm.68.-. (canceled)9. The nanostructure of claim 1 , wherein the shell comprises ZnSe.10. (canceled)11. The nanostructure of any one of claim 1 , wherein the metal oxide comprises ZnO or ZnOSe.12. A method of making the nanostructures of claim 1 , comprising:(a) admixing a plurality of the core/shell nanostructures and solvent;(b) raising the temperature to between about 180° C. and about 360° C.; and(c) exposing the composition obtained in (b) to water in an amount that is a molar ratio of 2,000 to 10,000 water:core/shell nanostructures.1315.-. (canceled)16. The method of claim 12 , wherein the exposing the composition in (c) to water is by admixing a metal hydrate.17. The method of claim 16 , wherein the metal hydrate is zinc acetate dihydrate.18. The method of claim 16 , wherein the molar ratio of the zinc acetate dihydrate to the core/shell nanostructures range is from about 1000 to about 90000 claim 16 , wherein the QDs size ranges from about 1 nm to 20 nm.1920.-. (canceled)21. The method of claim 18 , wherein the molar ratio of the zinc acetate dihydrate to the number of QDs is about 2900 claim 18 , wherein the QDs size is about 5 nm.22. (canceled)23. The method of claim 16 , wherein the exposing the composition in (c) ...

Fluorescent substance and light-emitting device employing the same

The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element M 1 other than the metal element M, a tetravalent element M 2 other than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as Sr 3 Al 3 Si 13 O 2 N 21 , but the chemical bond lengths of M 1 -N and M 2 -N are within the range of ±15% based on those of Al—N and Si—N calculated from the lattice constants and atomic coordinates of Sr 3 Al 3 Si 13 O 2 N 21 , respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.

LIGHT-EMITTING APPARATUS AND ILLUMINATION APPARATUS

A light-emitting apparatus is provided. The light-emitting apparatus includes: a substrate; an LED chip on the substrate; and a sealant which seals the LED chip. The sealant includes at least 0.05 wt % oxide of a transition metal as an additive for inhibiting deterioration of a base material of the sealant. Additionally or alternatively, the sealant includes at least one of a metal salt of a transition metal and an organic complex of a transition metal, as the additive. 1. A light-emitting apparatus , comprising:a substrate;a light-emitting element on the substrate: anda sealant which seals the light-emitting element, whereinthe sealant includes at least 0.05 wt % oxide of a transition metal as an additive for inhibiting deterioration of a base material of the sealant.2. The light-emitting apparatus according to claim 1 , whereinthe transition metal is a group 4 element.3. The light-emitting apparatus according to claim 2 , whereinthe transition metal is titanium or zirconium.4. The light-emitting apparatus according to claim 1 , whereinthe transition metal is a rare earth element.5. The light-emitting apparatus according to claim 4 , whereinthe transition metal is yttrium, cerium, or gadolinium.6. The light-emitting apparatus according to claim 1 , whereinthe sealant further includes phosphor which is excitable by light emitted by the light-emitting element, andthe additive is not excitable by the fitted by the light-emitting element.7. The light-emitting apparatus according to claim 6 , whereinthe light-emitting element is configured to emit the light of a first color,the phosphor is configured to wavelength-convert a first portion of the light emitted by the light-emitting element into second light of a second color, andthe sealant is configured to diffuse and mix a second portion of the light emitted by the light-emitting element which is not absorbed by the phosphor and the second light to emit a third light of a third color, the third color being different ...

Method for Producing an Output Coupling Element for an Optoelectronic Component and Output Coupling Element

A method for producing an output coupling element and an output coupling element are disclosed. In an embodiment a method includes producing a suspension having quantum dots in a suspension medium, wherein each quantum dot comprises a core having a semiconductor material, directly applying the suspension onto a surface of an optoelectronic component and/or onto a surface of a carrier and removing the suspension medium for producing the output coupling element, wherein the output coupling element is matrix-free and transparent to radiation of a red range and/or a IR range. 117-. (canceled)18. A method for producing an output coupling element , the method comprising:producing a suspension having quantum dots in a suspension medium, wherein each quantum dot comprises a core having a semiconductor material;directly applying the suspension onto a surface of an optoelectronic component and/or onto a surface of a carrier; andremoving the suspension medium for producing the output coupling element, wherein the output coupling element is matrix-free and transparent to radiation of a red range and/or a IR range.19. The method according to claim 18 , wherein the semiconductor material is selected from the group consisting of GaP claim 18 , InP claim 18 , GaAs and InGaAlP.20. The method according to claim 18 , wherein the output coupling element consists essentially of the quantum dots.21. The method according to claim 18 , wherein the semiconductor material is GaP or InP.22. The method according to claim 18 , wherein the output coupling element is formed as a lens.23. The method according to claim 18 ,wherein the suspension is directly applied onto the surface of the carrier, and subsequently the suspension medium is removed so that the output coupling element is produced directly on the surface of the carrier,wherein a further suspension comprising quantum dots is produced as a layer on the surface of the optoelectronic component, wherein subsequently the carrier is removed ...

ELECTROLUMINESCENT DEVICE, AND DISPLAY DEVICE COMPRISING THE SAME

An electroluminescent device and a display device including the device are disclosed, wherein the electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; an emission layer disposed on the hole transport layer, the emission layer including quantum dots; 1. An electroluminescent device comprisinga first electrode;a hole transport layer disposed on the first electrode;an emission layer disposed on the hole transport layer, the emission layer comprising quantum dots;a self-assembled monomolecular layer disposed on the emission layer, the self-assembled monomolecular layer comprising self-assembled monomolecules;an electron transport layer disposed on the self-assembled monomolecular layer; anda second electrode disposed on the electron transport layer.2. The electroluminescent device of claim 1 , wherein the self-assembled monomolecules are attached to the surface of the quantum dots.3. The electroluminescent device of claim 2 , whereinthe self-assembled monomolecules have a first terminal end proximate to the surface of the quantum dots and a second terminal end distal from the surface of the quantum dots, andthe first terminal end forms a chemical bond with the surface of the quantum dots.4. The electroluminescent device of claim 3 , wherein the first terminal end comprises carboxylate claim 3 , phosphoryl claim 3 , or a combination thereof.7. The electroluminescent device of claim 1 , wherein the self-assembled monomolecules are dissolved in a solvent comprising water claim 1 , ethanol claim 1 , methanol claim 1 , propanol claim 1 , butanol claim 1 , acetic acid claim 1 , ethylene glycol claim 1 , diethylene glycol claim 1 , glycerine claim 1 , isopropyl alcohol claim 1 , 2-methoxy ethanol claim 1 , acetone claim 1 , acetonitrile claim 1 , or a combination thereof.8. The electroluminescent device of claim 1 , wherein the self-assembled monomolecular layer has an average thickness of about 0.1 nanometers to about 5 ...