Phosphor particle, composite, light-emitting device, and method for producing phosphor particle

An α-sialon phosphor particle containing Eu. At least one minute recess is formed on a surface of the α-sialon phosphor particle. The α-sialon phosphor particle is preferably produced by undergoing a raw material mixing step, a heating step, a pulverizing step, and an acid treatment step.

Phosphor, light-emitting device, illumination device, image display device, and indicator lamp for vehicle

A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and having a minimum reflectance of 20% or more in a specific wavelength region, in which the specific wavelength region is from the emission peak wavelength of the phosphor to 800 nm, and a light-emitting device comprising the phosphor.

METHOD OF PRODUCING BETA-SIALON FLUORESCENT MATERIAL

Provided a method of producing a β-sialon fluorescent material having excellent emission intensity. The method includes providing a first composition containing aluminum, an oxygen atom, and a europium-containing silicon nitride, heat treating the first composition, contacting the heat-treated composition and a basic substance to obtain a second composition, and contacting the second composition resulting from contacting the heat-treated composition with the basic substance and an acidic liquid medium containing an acidic substance.

Reflector and irradiation device

A reflector includes a reflector body that reflects light emitted from a light source and a phosphor layer that is provided on the reflector body and includes a phosphor excited by the light emitted from the light source.

PHOSPHOR POWDER, COMPOSITE, AND LIGHT-EMITTING DEVICE

A phosphor powder composed of α-sialon phosphor particles containing Eu. In a case where an internal quantum efficiency after the phosphor powder is held at 600° C. for 1 hour in an air atmosphere is defined as P1 and an internal quantum efficiency after the phosphor powder is held at 700° C. for 1 hour in an air atmosphere is defined as P2, P1 is equal to or more than 70% and (P1−P2)/P1×100 is equal to or less than 2.8%. 1. A phosphor powder composed of α-sialon phosphor particles containing Eu ,{'sub': x', 'y', 'z', '12−(m+n)', 'm+n', 'n', '16−n, 'wherein the α-sialon phosphor particles are composed of an α-sialon phosphor containing an Eu element, represented by General Formula: (M1, M2, Eu)(SiAl)(ON) (provided that M1 is a monovalent Li element and M2 is a divalent Ca element), and in the general formula, x=0, 0 Подробнее

FLUORESCENT MEMBER, METHOD FOR PRODUCING SAME, AND LIGHT-EMITTING DEVICE

A fluorescent member according to present invention is composed of a sintered body for wavelength conversion containing a matrix containing magnesium oxide and magnesium hydroxide as main components, and phosphor particles dispersed in the matrix. A thermal conductivity of the fluorescent member is preferably 5 W/(m·K) or higher. A fluorescent member having both a satisfactory thermal conductivity and a satisfactory fluorescent property is provided without requiring a high-temperature sintering process (a high-temperature process at a temperature higher than 250°C). Further, a method for manufacturing such a fluorescent member and a light-emitting apparatus using such a fluorescent member are provided.

Дисперсия, содержащая допированные Eu2+ неорганические люминесцентные наночастицы, для применения в теплицах и листовых конструкциях, а также покрытия для теплиц, содержащие такие наночастицы

Изобретение относится к дисперсии люминесцентных наночастиц для покрытия конструкции остекления теплицы. Дисперсия содержит: органическую или водную среду и люминесцентные наночастицы, где наночастицы содержат или по существу состоят из частиц допированного Eu2+ SiAlON, где концентрация Si составляет от 31 до 33 ат. %, концентрация Al – от 0,3 до 4 ат. %, концентрация O – от 63 до 66 ат. %, концентрация N – 0 ат. % и Eu2+ – от 0,3 до 1 ат. %. Также предложены прозрачный полимерный лист для теплицы, люминесцентная конструкция остекления для теплицы и теплица, содержащие указанные наночастицы. Люминесцентные наночастицы SiAlON:Eu2+ обладают сильным поглощением в УФ-области и испусканием в области АФИ и не перекрываются или, по меньшей мере, почти не перекрываются с областью поглощения, при этом квантовая эффективность люминесценции (КЭЛ) близка к единице. Кроме того, наночастицы обладают превосходными свойствами с точки зрения долговечности, включая, например, химическую стабильность, термическую ...

Beta-Sialon-Leuchststoff und lichtemittierende Vorrichtung

Es wird bereitgestellt ein β-Sialon-Leuchtstoff bereitgestellt, der durch die allgemeine Formel: Si6-zAlzOzN8-z(0 < z < 4,2) dargestellt ist, wobei der Leuchtstoff, als Wirtskristall, eine Kristallstruktur, die identisch mit der einer β-Sialon-Kristallphase ist, aufweist und eine Schüttdichte von 0,80 g/cm3oder mehr und 1,60 g/cm3oder weniger aufweist. Es wird außerdem ein lichtemittierendes Element bereitgestellt, das den β-Sialon-Leuchtstoff und ein lichtemittierendes Halbleiterelement, das imstande ist, den β-Sialon-Leuchtstoff anzuregen, umfasst.

PHOSPHOR PLATE AND LIGHT EMITTING DEVICE USING THE SAME

A phosphor plate including a base material, and a plate-shaped composite including phosphors dispersed in the base material, in which in a case in which an absorption spectrum of light having a wavelength of 300 nm to 700 nm is measured, when an absorbance at 455 nm is defined as A455(%), an absorbance at 700 nm is defined as A700(%), and a thickness of the phosphor plate is defined as T (mm), (A700/A455)/T satisfies 0.01 or more and 1.00 or less.

WHITE LIGHT SOURCE SYSTEM

Fluorescent member, its manufacturing method, and light-emitting apparatus

A fluorescent member according to present invention is composed of a sintered body for wavelength conversion containing a matrix containing magnesium oxide and magnesium hydroxide as main components, and phosphor particles dispersed in the matrix. A thermal conductivity of the fluorescent member is preferably 5 W/(m·K) or higher. A fluorescent member having both a satisfactory thermal conductivity and a satisfactory fluorescent property is provided without requiring a high-temperature sintering process (a high-temperature process at a temperature higher than 250° C.). Further, a method for manufacturing such a fluorescent member and a light-emitting apparatus using such a fluorescent member are provided.

PHOSPHOR, LIGHT-EMITTING DEVICE, ILLUMINATION DEVICE, IMAGE DISPLAY DEVICE, AND INDICATOR LAMP FOR VEHICLE

A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and when, in a powder X-ray diffraction spectrum of the phosphor, the intensity of a peak that appears in a region where 2θ=38-39° is designated as Ix and the intensity of a peak that appears in a region where 2θ=37-38° is designated as Iy, the relative intensity Ix/Iy of Ix to Iy is 0.140 or less, and a light-emitting device comprising the phosphor.

Optoelectronic semiconductor device and flashlight

In one embodiment, the optoelectronic semiconductor device comprises a carrier having electrical connection surfaces on a carrier upper side. At least four semiconductor chips are configured to emit light of different colors from each other. The semiconductor chips are mounted close to each other on the connection surfaces so that a distance between adjacent semiconductor chips is at most 100 μm in a top view on the carrier upper side.

WHITE LIGHT SOURCE INCLUDING LED AND PHOSPHORS

According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.

STRAHLUNGSEMITTIERENDES OPTOELEKTRONISCHES BAUELEMENT

[beta]-SiAlON fluorescent body and light-emitting device

Provided is a [beta]-SiAlON fluorescent body that is represented by general formula: Si6-zAlzOzN8-z (0 < z < 4.2), that has, as a host crystal, the same crystal structure as that of the [beta]-SiAlON crystal phase, and that has a bulk density of 0.80-1.60 g/cm3. Also, provided is a light-emitting element having the [beta]-SiAlON fluorescent body and a semiconductor light-emitting element capable of exciting the [beta]-SiAlON fluorescent body.

Green-emitting phosphors and devices thereof

LIGHT EMITTING DEVICE AND LIGHTENING FIXTURE PROVIDED WITH SAME

To provide a light emitting device that has an excellent color rendering property and a high light emission efficiency, and a lightening fixture provided with the same. A light emitting device including a light emitting element having a light emission peak wavelength in a range of 430 nm or more and 470 nm or less, and a fluorescent member including two or more kinds of rare earth aluminate fluorescent materials including at least one kind selected from the group consisting of a first fluorescent material having a composition represented by the following formula (I) (Y3(Al,Ga)5O12:Ce), a second fluorescent material having a composition represented by the following formula (II) (Lu3Al5O12:Ce), and a third fluorescent material having a composition represented by the following formula (III) (Y3Al5O12:Ce), a fourth fluorescent material having a composition represented by the following formula (IV) (A2[M11-pMn4+pF6]), and a fifth fluorescent material having a composition represented by the following ...

OXIDE FLUORESCENT MATERIAL AND LIGHT EMITTING DEVICE

To provide an oxide fluorescent material that has a light emission peak wavelength in a wavelength range of from red light to near infrared light. The oxide fluorescent material has a composition encompassed in a compositional formula represented by the following formula (1): (Li1-tM1t)u(Ga1-vM2v)5Ow:Crx,Niy,M3z, (1) wherein in the formula (1), M1represents at least one kind of an element selected from the group consisting of Na, K, Rb, and Cs; M2represents at least one kind of an element selected from the group consisting of B, Al, Sc, In, and a rare earth element; M3represents at least one kind of an element selected from the group consisting of Si, Ge, Sn, Ti, Zr, Hf, Bi, V, Nb, and Ta; and t, u, v, w, x, y, and z each satisfy 0≤t≤1.0, 0.7≤u≤1.6, 0≤v<1.0, 7.85≤w≤11.5, 0.05≤x≤1.2, 0≤y≤0.5, 0.25 Подробнее

LIGHT EMITTING DEVICE

Phosphor-converted red LEDs and color-tunable multi-LED lighting devices

A lighting device comprising: a first LED having a wavelength of maximum emission intensity from 620 nm to 640 nm; a second LED having a wavelength of maximum emission intensity from 500 nm to 565 nm; a third LED having a wavelength of maximum emission intensity from 430 nm to 480 nm; and a fourth LED for generating light comprising a CCT in a range from 1800K to 5000K. The first LED comprises a Phosphor-Converted LED comprising a first LED chip having a maximum emission intensity wavelength from 400 nm to 480 nm, and a narrowband red phosphor with a FWHM less than 55 nm. Light generated by the device comprises a combination of light generated by the first, second, third, and fourth LEDs and a CCT of light generated by the device is tunable by independently controlling power to the first, second, third, and fourth LEDs.

Phosphor, light-emitting device, image display device, and illumination device

Provided is a phosphor that includes a crystal phase represented by the following Formula [1] and has a microstrain of 0.049% or less as calculated by the Halder-Wagner method: EuaSibAlcOdNe [1] (wherein, a, b, c, d, and e represent values satisfying the following respective ranges: 0 Подробнее

Light emitting device emitting light bright in both scotopic vision and photipic vision

A light emitting device includes a light emitting element having a dominant wavelength in a range of 400 nm or more and 500 nm or less, and a wavelength conversion member that is arranged on a light emitting side of the light emitting element and includes a rare earth aluminate fluorescent material having a composition represented by the following formula (I), wherein the light emitting device emits light having a dominant wavelength in a range of 475 nm or more and 500 nm or less, and wherein the light emitting device emits light having an S/P ratio of 6.5 or less derived from the formula (1), which is the ratio of a luminous flux in scotopic vision relative to a luminous flux in photopic vision: (Lu1-p-nLnpCen)3(Al1-mGam)5kO12 (I) wherein in the formula (I), Ln represents at least one rare earth element selected from the group consisting of Y, La, Gd, and Tb, and the parameters k, m, n, and p satisfy 0.95≤k≤1.05, 0.05≤m≤0.70, 0.002≤n≤0.050, and 0≤p≤0.30, respectively.

LIGHT EMITTING DEVICE

Provided is a light emitting device that is bright in both scotopic vision and photopic vision, and has reduced glare for humans. The light emitting device includes a light emitting element having a dominant wavelength in a range of 430 nm or more and 500 nm or less, and a fluorescent material that is excited by light emitted from the light emitting element and has a light emission peak wavelength in a range of 507 nm or more and 660 nm or less, wherein the light emitting device emits light having a dominant wavelength in a range of 490 nm or more and 500 nm or less, wherein the light emitting device has an S/P ratio, which is the ratio of a luminous flux in photopic vision to a luminous flux in scotopic vision, being 6.5 or less, and wherein the light emitting device has a light emission intensity in the light emission peak wavelength of the light emitting element that is greater than that in the light emission peak wavelength of the fluorescent material.

Method of producing beta-sialon fluorescent material

Provided a method of producing a β-sialon fluorescent material having excellent emission intensity. The method includes providing a first composition containing aluminum, an oxygen atom, and a europium-containing silicon nitride, heat treating the first composition, contacting the heat-treated composition and a basic substance to obtain a second composition, and contacting the second composition resulting from contacting the heat-treated composition with the basic substance and an acidic liquid medium containing an acidic substance.

Light-emitting device

A light-emitting device is provided. The light-emitting device includes a light-emitting element having a peak light-emitting wavelength in the range of 440 nm to 470 nm, and a fluorescent member. The fluorescent member includes a first fluorescent material having a peak light-emitting wavelength in the range of 480 nm to less than 520 nm, a second fluorescent material having a peak light-emitting wavelength in the range of 520 nm to less than 600 nm, and a third fluorescent material having a peak light-emitting wavelength in the range of 600 nm to 670 nm. The light-emitting device has a ratio of an effective radiant intensity for melatonin secretion suppression to an effective radiant intensity for blue-light retinal damage of 1.53 to 1.70 when the light-emitting device emits light with a correlated color temperature of 2700 K to less than 3500 K; 1.40 to 1.70 when the light-emitting device emits light with a correlated color temperature of 3500 K to less than 4500 K; 1.40 to 1.70 when ...

Wavelength conversion member, and light emitting device using same

Provided is a wavelength conversion member that is less decreased in luminescence intensity with time by irradiation with light of an LED or LD and a light emitting device using the wavelength conversion member. A wavelength conversion member is formed of an inorganic phosphor dispersed in a glass matrix, wherein the glass matrix contains, in % by mole, 30 to 85% SiO2, 0 to 20% B2O3, 0 to 25% Al2O3, 0 to 3% Li2O, 0 to 3% Na2O, 0 to 3% K2O, 0 to 3% Li2O+Na2O+K2O, 0 to 35% MgO, 0 to 35% CaO, 0 to 35% SrO, 0 to 35% BaO, 0.1 to 45% MgO+CaO+SrO+BaO, and 0 to 4% ZnO, and the inorganic phosphor is at least one selected from the group consisting of an oxide phosphor, a nitride phosphor, an oxynitride phosphor, a chloride phosphor, an oxychloride phosphor, a halide phosphor, an aluminate phosphor, and a halophosphate phosphor.

SEMICONDUCTOR LIGHT-EMITTING DEVICE, EXHIBIT-IRRADIATING ILLUMINATION DEVICE, MEAT-IRRADIATING ILLUMINATION DEVICE, VEGETABLE-IRRADIATING ILLUMINATION DEVICE, FRESH FISH-IRRADIATING ILLUMINATION DEVICE, GENERAL-PURPOSE ILLUMINATION DEVICE, AND SEMICONDUCTOR LIGHT-EMITTING SYSTEM

METHOD FOR PRODUCING FLUORIDE PHOSPHOR

Provided is a method for producing a fluoride phosphor. The method includes: providing a first solution containing an element M1containing at least one selected from the group consisting of group 13 elements, manganese, and fluorine, a second solution containing an element M2containing at least one selected from the group consisting of group 4 elements and group 14 elements, and a third solution containing at least one selected from the group consisting of alkali metal elements; and adding the second solution and the third solution to the first solution at substantially the same time.

Solution for use in filling micrometer-size cavities

Solution for use in filling micrometer-size cavities (10), the solution comprising a first solvent, a first polymer (102) having a first molecular weight, a second polymer (103) having a second molecular weight, luminophores (101) and a surfactant, the second molecular weight being 10 to 50 times greater than the first molecular weight.

BETA-SIALON PHOSPHOR AND LIGHT EMITTING DEVICE

A europium-doped β-sialon phosphor, in which, when the ratio of an aluminum element at a depth of 8 nm from the surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P[at %], and the ratio of an aluminum element at a depth of 80 nm from the surface of the phosphor is indicated by P[at %], P/P≤0.9 is satisfied. A light emitting device containing this β-sialon phosphor. 1. A europium-doped β-sialon phosphor ,{'sub': 8', '80', '8', '80, 'wherein, when a ratio of an aluminum element at a depth of 8 nm from a surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P(Al)[at %], and a ratio of an aluminum element at a depth of 80 nm from the surface of the phosphor is indicated by P(Al)[at %], P(Al)/P(Al)≤0.9 is satisfied.'}2. The β-sialon phosphor according to claim 1 ,{'sub': '8', 'wherein the P(Al)is 0.8 [at %] or less.'}3. The β-sialon phosphor according to claim 1 ,{'sub': '80', 'wherein the P(Al)is 0.9 [at %] or more and 5 [at %] or less.'}4. The β-sialon phosphor according to claim 1 ,{'sub': 0', '0, 'wherein, when a ratio of an aluminum element on an outermost surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P(Al)[at %], P(Al)is 0.1 [at %] or less.'}5. The β-sialon phosphor according to claim 1 ,{'sub': 'V50', 'wherein a 50% diameter Din a cumulative volume in particle size distribution is 5 μm or more and 50 μm or less.'}6. The β-sialon phosphor according to claim 1 ,{'sub': 6-Z', 'Z', 'Z', '8-Z, 'sup': '2+', 'wherein the β-sialon phosphor is represented by general formula SiAlON:Eu (0≤Z≤4.2).'}7. The β-sialon phosphor according to claim 1 ,{'sub': 8', '80', '8', '80, 'wherein, when a ratio of a silicon atom at a depth of 8 nm from the surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P(Si)[at %], and a ratio of a silicon atom at a depth of 80 nm from the surface of the phosphor is indicated ...

Phosphor, light-emitting device, illumination device, image display device, and indicator lamp for vehicle

A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and having a minimum reflectance of 20% or more in a specific wavelength region, in which the specific wavelength region is from the emission peak wavelength of the phosphor to 800 nm, and a light-emitting device comprising the phosphor.

WAVELENGTH CONVERSION MEMBER, AND LIGHT EMITTING DEVICE USING SAME

Provided is a wavelength conversion member that is less decreased in luminescence intensity with time by irradiation with light of an LED or LD and a light emitting device using the wavelength conversion member. A wavelength conversion member is formed of an inorganic phosphor dispersed in a glass matrix, wherein the glass matrix contains, in % by mole, 30 to 85% SiO2, 0 to 20% B2O3, 0 to 25% Al2O3, 0 to 3% Li2O, 0 to 3% Na2O, 0 to 3% K2O, 0 to 3% Li2O+Na2O+K2O, 0 to 35% MgO, 0 to 35% CaO, 0 to 35% SrO, 0 to 35% BaO, 0.1 to 45% MgO+CaO+SrO+BaO, and 0 to 4% ZnO, and the inorganic phosphor is at least one selected from the group consisting of an oxide phosphor, a nitride phosphor, an oxynitride phosphor, a chloride phosphor, an oxychloride phosphor, a halide phosphor, an aluminate phosphor, and a halophosphate phosphor.

NITRIDE PHOSPHOR, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE

A nitride phosphor having a composition containing Eu, Si, Al, N, and a group 2 element including at least one selected from the group consisting of Mg, Ca, Sr, and Ba. In the composition, a ratio of a total molar content of the group 2 element and Eu to a molar content of Al is 0.8 or more and 1.1 or less, a molar ratio of Eu is 0.002 or more and 0.08 or less, a molar ratio of Si is 0.8 or more and 1.2 or less, and a total molar ratio of Si and Al is 1.8 or more and 2.2 or less. The nitride phosphor has a first peak in a range of 17° 2θ or more and 19° 2θ or less and a second peak in a range of 34° 2θ or more and 35.5° 2θ or less in a CuKα powder X-ray diffraction pattern.

SYSTEM AND METHOD FOR SELECTED PUMP LEDS WITH MULTIPLE PHOSPHORS

An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Phosphor, Method for Producing Same and Light Emitting Element

Provided is a phosphor which emits near-infrared light upon irradiation of visible light or ultraviolet light. A phosphor in an embodiment of the present invention includes an inorganic substance which contains at least an Eu element, an M[3] element (M[3] is at least one selected from the group consisting of Al, Y, La and Gd.), a Si element and nitrogen element, and also contains, if necessary, at least one element selected from the group consisting of M[1] element (M[1] is Li element.), an M[2] element (M[2] is at least one element selected from the group consisting of Mg, Ca, Ba and Sr.) and an oxygen element, while the phosphor has a maximum value of an emission peak at a wavelength in the range of 760 nm or more and 850 nm and less upon irradiation by an excitation source. 1. A phosphor comprising an inorganic substance comprising an Eu element , an M[3] element (M[3] is at least one kind of element selected from a group consisting of Al , Y , La , and Gd) , a Si element , a nitrogen element , and , if necessary , at least one kind of element selected from a group consisting of an M[1] element (M[1] is a Li element) , an M[2] element (M[2] is at least one kind of element selected from a group consisting of Mg , Ca , Ba , and Sr) , and an oxygen element , the phosphor emitting light having a local maximum value of a emission peak at a wavelength in a range of 760 nm or more and 850 nm or less upon irradiation by an excitation source.2. The phosphor according to wherein the inorganic substance is represented by a composition of M[1]EuM[2]M[3]SiON(where a+b+c+d+e+f+g=1) wherein parameters a claim 1 , b claim 1 , c claim 1 , d claim 1 , e claim 1 , f claim 1 , and g are represented by values respectively satisfying:0≤a≤0.01,0.006≤b≤0.15,0≤c≤0.15,0.001≤d≤0.07,0.3≤e≤0.35,0≤f≤0.05, and0.5≤g≤0.56.3. The phosphor according to wherein the inorganic substance is represented by a composition of M[1]EuM[2]M[3]SiON(where a+b+c+d+e+f+g=1) wherein parameters a claim 2 , b ...

FLUORESCENT BODY, METHOD FOR MANUFACTURING SAME, AND LIGHT-EMITTING DEVICE USING SAME

WHITE LIGHT SOURCE AND WHITE LIGHT SOURCE SYSTEM USING WHITE LIGHT SOURCE

LED-filaments and LED-filament lamps

An LED-filament comprising: a partially light transmissive substrate; a plurality of LED chips on a front face of the substrate; a photoluminescence material that is in direct contact with and covers all of the plurality of LED chips; and a light scattering layer that is in direct contact with and covers at least the photoluminescence material, wherein the light scattering layer comprises particles of light scattering material, and wherein the photoluminescence material comprises broadband green to red photoluminescence materials and narrowband red photoluminescence material.

OPTOELEKTRONISCHES HALBLEITERBAUTEIL UND BLITZLICHT

In einer Ausführungsform umfasst das optoelektronische Halbleiterbauteil (1) einen Träger (2) mit elektrischen Anschlussflächen (22) an einer Trägeroberseite (20). Mindestens vier Halbleiterchips (31, 32, 33, 34, 35) sind dazu eingerichtet, Licht voneinander verschiedener Farben zu emittieren. Die Halbleiterchips (31, 32, 33, 34, 35) sind nah beieinander auf den Anschlussflächen (22) angebracht, sodass ein Abstand zwischen benachbarten Halbleiterchips (31, 32, 33, 34, 35) in Draufsicht auf die Trägeroberseite (20) gesehen höchstens 100 µm beträgt.

B-sialon phosphor and light emitting device

A β-sialon phosphor that is a solid solution of europium, in which D50is 7.0 μm or more and 20.0 μm or less and (D50−D10)/D50is 0.60 or less, where D50is a 50% area diameter of primary particles of the β-sialon phosphor, and D10is a 10% area diameter of the primary particles of the β-sialon phosphor. Primary particles are defined as single-crystal particles distinguished for each crystal orientation by identifying the crystal orientation of individual particles of the β-sialon phosphor by an electron backscatter diffraction image method. D50and D10are obtained by image analysis of the cross-sectional area of the primary particles.

Nitridfluoreszenzstoff und Lichtemittierende Vorrichtung mit derartigen Fluoreszenzstoff

Ein Nitridfluoreszenzstoff und eine lichtemittierende Vorrichtung, die den Nitridfluoreszenzstoff enthält, die zum technischen Gebiet anorganischer Leuchtmaterialien gehört. Der Nitridfluoreszenzstoff enthält eine Verbindung mit einer Struktur von MAlSiN: aR, bEu, cCe. Der Fluoreszenzstoff weist eine hohe physikalische Stabilität und chemische Stabilität auf und der Fluoreszenzstoff kristallisiert besser. Daher hat er eine hohe Externen-Quanten-Effizienz. Wenn der Fluoreszenzstoff auf eine lichtemittierende Vorrichtung aufgebracht wird, können die Vorteile einer guten Stabilität und einer hohen Externen-Quanten-Effizienz ausreichend gezeigt werden und damit die Lichtausbeute und die Stabilität der lichtemittierenden Vorrichtung verbessert werden.

PHOSPHOR AND LIGHT-EMITTING DEVICE

A phosphor which has a main crystal phase having the same crystal structure as that of CaAlSiN3, wherein the phosphor satisfies conditions of a span value (d90−d10)/d50 of 1.70 or less and a d50 of 10.0 μm or less, as represented with d10, d50, and d90 on a volume frequency measured according to a laser diffraction method; wherein the d10, d50, and d90 on a volume frequency in a particle distribution measured are each a measured by loading 0.5 g of a phosphor into 100 ml of a solution of 0.05% by weight of sodium hexametaphosphate mixed in ion exchange water, and subjecting the resultant to a dispersing treatment for 3 minutes with an ultrasonic homogenizer at an oscillation frequency of 19.5±1 kHz, a chip size of 20φ, and an amplitude of vibration of 32±2 μm, with a chip placed at a central portion.

RED PHOSPHOR AND LIGHT EMITTING DEVICE

A phosphor having a main crystal phase having a crystal structure identical to that of CaAlSiN, and including a Ca element partially replaced with an Eu element, wherein the phosphor has a median size d50 of 12.0 μm or more and 22.0 μm or less, as measured according to a laser diffraction scattering method, and has a specific surface area of 1.50 m/g or more and 10.00 m/g or less, as measured according to a BET method. 1. A phosphor having a main crystal phase having a crystal structure identical to that of CaAlSiN , and comprising a Ca element partially replaced with an Eu element , wherein the phosphor has a median size d50 of 12.0 μm or more and 22.0 μm or less , as measured according to a laser diffraction scattering method , and has a specific surface area of 1.50 m/g or more and 10.00 m/g or less , as measured according to a BET method.2. The phosphor according to claim 1 , having a content of oxygen of 1.00% by mass or more and 3.50% by mass or less.3. The phosphor according to claim 1 , wherein an emission peak wavelength in excitation by light at a wavelength of 455 nm is 645 nm or more and 680 nm or less claim 1 , and an x value and a y value of CIE chromaticity coordinates of an emission color are 0.662 or more and 0.710 or less and 0.290 or more and 0.328 or less claim 1 , respectively.4. A light-emitting apparatus comprising the phosphor according to claim 1 , and a light-emitting element. The invention relates to a red phosphor for a LED (Light Emitting Diode) or a LD (Laser Diode), and a light-emitting apparatus using the red phosphor. More specifically, the invention relates to a red phosphor high in brightness, and a light-emitting apparatus excellent in brightness by use of the red phosphor.White LEDs are devices that emit pseudo-white light by combinations of semiconductor light-emitting elements and phosphors, and combinations of blue LEDs and YAG yellow phosphors are known as typical examples. However, the white LEDs of such systems, while are ...

PHOSPHOR MIXTURE FOR USE IN A CONVERSION LAYER ON A SEMICONDUCTOR LIGHT SOURCE

A phosphor composition may include first and second phosphors configured to emit light of a first and a second unsaturated color, respectively. The first unsaturated color may be associated with a first position in a CIE standard color chart adjacent to and above a position of a selected target color of the phosphor composition in the CIE standard color chart. The second unsaturated color may be associated with a second position in a CIE chromaticity diagram adjacent to and below the position of the selected target color of the phosphor composition in the CIE chromaticity diagram. Thereby, the position of the selected target color of the phosphor composition in the CIE chromaticity diagram may be located in an area defined by corner positions R=(cx; cy) given by R1=(0.645; 0.335), R2=(0.665; 0.335), R3=(0.735; 0.265), and R4=(0.721; 0.259).

Phosphor process for producing a phosphor and optoelectronic device

A phosphor having the general formula EA7A2T1t1T2t2T3t3NnOo:RE. EA is selected from the group of divalent elements. A is selected from the group of monovalent elements. T1 is selected from the group of trivalent elements. T2 is selected from the group of tetravalent elements. T3 is selected from the group of pentavalent elements. RE is an activator element. 16+3 t1+4 t2+5 t3−3n−2 o=0. t1+t2+t3=5; n+o=16; 0≤t1≤4; 0≤t2≤5; 0≤t3≤5; 0≤n≤9; 7≤o≤16.

OPTOELEKTRONISCHES BAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINESOPTOELEKTRONISCHEN BAUELEMENTS

Die Anmeldung bezieht sich auf ein optoelektronisches Bauelement, das einen Halbleiterchip mit einer Vielzahl von Pixeln umfasst, wobei jedes Pixel elektromagnetische Primärstrahlung aus einer Strahlungsaustrittsfläche emittiert, wobei auf mindestens einem Teil der Strahlungsaustrittsflächen Konversionsschichten aufgebracht sind,wobei die Konversionsschichten eine quervernetzte Matrix mit einem dreidimensionalen Netzwerk auf Siloxanbasis und mindestens einen in die Matrix eingebetteten Leuchtstoff umfassen. Die Konversionsschichten haben eine Dicke von ≤ 30 µm.

Wavelength conversion member and white light emitting device using same

A wavelength conversion member converts a wavelength of laser light. The wavelength conversion member includes a substrate having reflectivity with respect to the laser light, and a phosphor layer including a phosphor for converting the laser light into light having a longer wavelength than that of the laser light, the phosphor layer being on the substrate. The phosphor layer includes a plurality of concave parts, each having a depth of 50% or more and 80% or less with respect to a film thickness of the phosphor layer and an opening width of 50 μm or more, on a surface of the phosphor layer, the surface irradiated with the laser light. A distance between adjacent concave parts of the plurality of concave parts is smaller than a spot diameter of the laser light to be emitted to the surface of the phosphor layer.

FLUORIDE PHOSPHOR, PRODUCTION METHOD THEREFOR, AND LIGHT-EMITTING DEVICE

Provided is a fluoride phosphor having higher durability. The fluoride phosphor includes a first fluoride and a second fluoride deposited on at least part of a surface of the first fluoride. The first fluoride has a composition containing an alkali metal, Si, Al, Mn, and F, wherein, when the number of moles of the alkali metal is taken as 2, the total number of moles of Si, Al, and Mn is 0.9 to 1.1; the number of moles of Al is more than 0 and less than 0.10; the number of moles of Mn is more than 0 and less than 0.20; and the number of moles of F is 5.9 to 6.1. The second fluoride has a composition which contains an alkali metal, Si, and F, and which is substantially free of Al and Mn.

Strahlungsemittierendes optoelektronisches Bauelement

Es wird ein strahlungsemittierendes optoelektronisches Bauelement (1) angegeben. Das Bauelement (1) umfasst einen Halbleiterchip (2) oder einen Halbleiterlaser, der im Betrieb des Bauelements eine Primärstrahlung im UV-Bereich oder im blauen Bereich des elektromagnetischen Spektrums emittiert und ein Konversionselement (3) umfassend- einen ersten Leuchtstoff, der dazu eingerichtet ist die Primärstrahlung zumindest teilweise in eine erste Sekundärstrahlung mit einer Peakwellenlänge im grünen Bereich des elektromagnetischen Spektrums zwischen einschließlich 475 nm bis einschließlich 500 nm zu konvertieren und wobei der erste Leuchtstoff aus einer Gruppe ausgewählt ist, die BaSiAlN, SrSiAlNO, BaSiNO, ALiSiOmit A = Alkalimetall und Kombinationen daraus umfasst.

OPTOELECTRONIC SEMICONDUCTOR DEVICE AND FLASHLIGHT

In one embodiment, the optoelectronic semiconductor device comprises a carrier having electrical connection surfaces on a carrier upper side. At least four semiconductor chips are configured to emit light of different colors from each other. The semiconductor chips are mounted close to each other on the connection surfaces so that a distance between adjacent semiconductor chips is at most 100 μm in a top view on the carrier upper side.

Method of producing beta-sialon fluorescent material

Provided a method of producing a β-sialon fluorescent material having excellent emission intensity. The method includes providing a first composition containing aluminum, an oxygen atom, and a europium-containing silicon nitride, heat treating the first composition, contacting the heat-treated composition and a basic substance to obtain a second composition, and contacting the second composition resulting from contacting the heat-treated composition with the basic substance and an acidic liquid medium containing an acidic substance.

OPTICAL DEVICE

An optical device includes an LED chip, a visible-light luminescent material, and a near-infrared luminescent material, wherein a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 650-1000 nm under the excitation of the LED chip is A, and a sum of a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 350-650 nm under the excitation of the LED chip and a luminous power of residual light emitted by the LED chip in the band of 350-650 nm after the LED chip excites the near-infrared and visible-light luminescent materials is B, with B/A*100% being 0.1%-10%. According to the implementation where the optical device employs the LED chip to combine the near-infrared luminescent material and the visible-light luminescent material simultaneously. 1. An optical device , comprising an LED chip , a visible-light luminescent material and a near-infrared luminescent material ,wherein a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 650-1000 nm under the excitation of the LED chip is A;a sum of a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 350-650 nm under the excitation of the LED chip and a luminous power of residual light emitted by the LED chip in the band of 350-650 nm after the LED chip excites the near-infrared and visible-light luminescent materials is B; andB/A*100% is 0.1%-10%.2. The optical device according to claim 1 , wherein the LED chip in the optical device has a peak-emission wavelength in a range of 420-470 nm; and a mixture of the light emitted by the visible-light and near-infrared luminescent materials under the excitation of the LED chip and the residual light of the LED chip after the excitation has a color temperature of 1000-5000 K.3. The optical device according to claim 1 , wherein the near-infrared luminescent material ...

PHOSPHOR PLATE AND LIGHT EMITTING DEVICE

A phosphor plate according to the present invention is a phosphor plate including: a plate-like composite including a base material and a phosphor dispersed in the base material, in which both Ry1and Ry2are 5.00 μm or less, where Ry1is a maximum height on a front surface of the phosphor plate and Ry2is a maximum height on a back surface.

Nitride phosphor, method for manufacturing the same, and light emitting device

A nitride phosphor having a composition containing Eu, Si, Al, N, and a group 2 element including at least one selected from the group consisting of Mg, Ca, Sr, and Ba. In the composition, a ratio of a total molar content of the group 2 element and Eu to a molar content of Al is 0.8 or more and 1.1 or less, a molar ratio of Eu is 0.002 or more and 0.08 or less, a molar ratio of Si is 0.8 or more and 1.2 or less, and a total molar ratio of Si and Al is 1.8 or more and 2.2 or less. The nitride phosphor has a first peak in a range of 17° 2θ or more and 19° 2θ or less and a second peak in a range of 34° 2θ or more and 35.5° 2θ or less in a CuKα powder X-ray diffraction pattern.

WAVELENGTH CONVERSION MEMBER AND WHITE LIGHT EMITTING DEVICE USING SAME

A wavelength conversion member converts a wavelength of laser light. The wavelength conversion member includes a substrate having reflectivity with respect to the laser light, and a phosphor layer including a phosphor for converting the laser light into light having a longer wavelength than that of the laser light, the phosphor layer being on the substrate. The phosphor layer includes a plurality of concave parts, each having a depth of 50% or more and 80% or less with respect to a film thickness of the phosphor layer and an opening width of 50 μm or more, on a surface of the phosphor layer, the surface irradiated with the laser light. A distance between adjacent concave parts of the plurality of concave parts is smaller than a spot diameter of the laser light to be emitted to the surface of the phosphor layer.

Radiation-emitting optoelectronic component

A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi4Al3N9, SrSiAl2O3N2, BaSi2N2O2, ALi3XO4, M*(1−x*−y*−z*)Z*z*[A*a*B*b*C*c*D*d*E*e*N4-n*On*], and combinations thereof.

Optoelectronic Component and Method for Producing an Optoelectronic Component

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.

NITRIDE PHOSPHOR, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE

A nitride phosphor having a composition containing Eu, Si, Al, N, and a group 2 element including at least one selected from the group consisting of Mg, Ca, Sr, and Ba. In the composition, a ratio of a total molar content of the group 2 element and Eu to a molar content of Al is 0.8 or more and 1.1 or less, a molar ratio of Eu is 0.002 or more and 0.08 or less, a molar ratio of Si is 0.8 or more and 1.2 or less, and a total molar ratio of Si and Al is 1.8 or more and 2.2 or less. The nitride phosphor has a first peak in a range of 17° 2θ or more and 19° 2θ or less and a second peak in a range of 34° 2θ or more and 35.5° 2θ or less in a CuKα powder X-ray diffraction pattern.

LIGHT CONVERSION DEVICE WITH HIGH UNIFORMITY

Disclosed is a blue to white light conversion device, comprising: a light conversion subassembly comprising at least one light conversion layer, sandwiched between two light transmitting members, wherein the light conversion layer comprises a light conversion material comprising phosphors and/or quantum dots; at least one light diffusing subassembly neighboring the light conversion subassembly; and a top frame and a bottom frame surrounding the light diffusing subassembly and light conversion subassembly, respectively.

LIGHT EMITTING DEVICE

A light emitting diode package including: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

Method for producing nitride fluorescent material, and nitride fluorescent material

A method for producing a nitride fluorescent material includes preparing fluorescent material core particles having a composition containing Sr, Ca, Eu, Al, Si, and N, in which, when a molar ratio of Al in the composition is 1, a molar ratio of Sr is in a range of 0.45 or more and 1.1 or less, a molar ratio of Ca is in a range of more than 0 and less than 0.55, a molar ratio of Eu is in a range of more than 0 and 0.033 or less, a total molar ratio of Sr, Ca, and Eu is 1.1 or less, a molar ratio of Si is in a range of 0.81 or more and 1.21 or less, and a molar ratio of N is in a range of 2.25 or more and 3.85 or less, subjecting them to a first heat treatment and a second heat treatment.

Optical device

An optical device includes an LED chip, a visible-light luminescent material, and a near-infrared luminescent material, wherein a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 650-1000 nm under the excitation of the LED chip is A, and a sum of a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 350-650 nm under the excitation of the LED chip and a luminous power of residual light emitted by the LED chip in the band of 350-650 nm after the LED chip excites the near-infrared and visible-light luminescent materials is B, with B/A*100% being 0.1%-10%. According to the implementation where the optical device employs the LED chip to combine the near-infrared luminescent material and the visible-light luminescent material simultaneously.

Nitride fluorescent material and light-emitting device containing same

The present invention belongs to the technical field of inorganic luminescent materials, particularly relates to a nitride fluorescent material, and further discloses a light-emitting device containing such a fluorescent material. The nitride fluorescent material contains a compound with a structure like MmAlxSiyN3: aR, bEu, cCe. The fluorescent material has very high physical stability and chemical stability, and the fluorescent material is better in crystallization, and thus has relatively high external quantum efficiency. When being applied to a light-emitting device, the fluorescent material can fully exert the advantages of good stability and high external quantum efficiency, and the light-emitting efficiency and stability of the light-emitting device can be further improved.

Red phosphor and light emitting device

The primary crystal phase of this phosphor has the same crystal structure as CaAlSiN3, and part of the element Ca therein is substituted with the element Eu, wherein the median radius d50 measured with laser diffraction scattering is 12.0-22.0 [mu]m, and the specific surface area measured with the BET method is 1.50-10.00 m2/g.

PHOSPHOR AND METHOD FOR PRODUCING PHOSPHOR

A phosphor including a crystal phase of an aluminate compound containing a metal element M constituting a luminescent center ion and aluminum, in which the crystal phase contains crystallites, and an average size of the crystallites is 2 to 100 μm.

Light emitting device with improved warm-white color point

A light emitting device is disclosed and includes an emission source configured to emit a primary blue light and a wavelength-converting element configured to convert the primary blue light to a secondary light, where the wavelength-converting element including a red phosphor material having a peak emission wavelength that is less than 620 nm and a green phosphor material having a peak emission wavelength that is greater than 530 nm. The device may have a correlated color temperature (CCT) in the range of 1600K-2500K, may exhibit a melanopic/photopic ratio less than 0.25 and/or may exhibit a radiometric power fraction of light having a wavelength below 530 nm below 0.1.

GREEN-EMITTING PHOSPHORS AND DEVICES THEREOF

A device including an LED light source optically coupled to a green-emitting U6+-doped phosphor having a composition selected from the group consisting of U6+-doped phosphate-vanadate phosphors, U6+-doped halide phosphors, U6+-doped oxyhalide phosphors, U6+-doped silicate-germanate phosphors, U6+-doped alkali earth oxide phosphors, and combinations thereof, is presented. The U6+-doped phosphate-vanadate phosphors are selected from the group consisting of compositions of formulas (A1)-(A12). The U6+-doped halide phosphors are selected from the group consisting of compositions for formulas (B1)-(B3). The U6+-doped oxyhalide phosphors are selected from the group consisting of compositions of formulas (C1)-(C5). The U6+-doped silicate-germanate phosphors are selected from the group consisting of compositions of formulas (D1)-(D11). The U6+-doped alkali earth oxide phosphors are selected from the group consisting of formulas (E1)-(E11).

A DISPERSION COMPRISING EU2+ DOPED INORGANIC LUMINESCENT NANOPARTICLES FOR GREENHOUSE APPLICATIONS AND SHEET STRUCTURES AND COATINGS FOR GREENHOUSES COMPRISING SUCH NANOPARTICLES

NITRIDE FLUORESCENT MATERIAL AND LIGHT-EMITTING DEVICE CONTAINING SAME

The present invention belongs to the technical field of inorganic luminescent materials, particularly relates to a nitride fluorescent material, and further discloses a light-emitting device containing such a fluorescent material. The nitride fluorescent material contains a compound with a structure like MAlSiN: aR, bEu, cCe. The fluorescent material has very high physical stability and chemical stability, and the fluorescent material is better in crystallization, and thus has relatively high external quantum efficiency. When being applied to a light-emitting device, the fluorescent material can fully exert the advantages of good stability and high external quantum efficiency, and the light-emitting efficiency and stability of the light-emitting device can be further improved. 1. A nitride fluorescent material , wherein the fluorescent material contains a compound with the chemical formula MAlSiN3:aR , bEu , cCe , wherein the M element is selected from Ca element and/or Sr element;the R element is selected from at least one of Er element, Nd element, Yb element, Cr element, and Fe element; andthe parameters m, x, y, a, b and c meet the following relationships: 0.8≤m≤1.0, 0.9≤x≤1.1, 0.9≤y≤1.1, 0.001≤a≤0.20, 0≤b≤0.20 and 0≤c≤0.1.2. The nitride fluorescent material according to claim 1 , wherein the fluorescent material has the same crystal structure as CaAlSiN.3. The nitride fluorescent material according to claim 1 , wherein the M element is the Ca element and Sr element claim 1 , and a molar ratio of the Ca element to the M element is not less than 0.8.4. The nitride fluorescent material according to claim 1 , wherein the parameters b and c meet the following relationships: 0.001≤b≤0.10 and 0.001≤c≤0.05; andpreferably, 3≤b/c≤6.5. The nitride fluorescent material according to claim 1 , wherein the parameters x and y meets the following relationship: 1≤y/x≤1.3.6. The nitride fluorescent material according to claim 1 , wherein the M element is the Ca element and the R ...

PHOSPHOR COATING MATERIAL, COATING FILM, PHOSPHOR BOARD, AND ILLUMINATION DEVICE

A phosphor coating material containing phosphor particles and a curable resin component. In the phosphor coating material, a content of the phosphor particles in all non-volatile components is equal to or more than 25 vol % and equal to or less than 60 vol %. Using the phosphor coating material, it is possible to produce a coating film (phosphor layer), a phosphor board, and an illumination device.

SINTERED PHOSPHOR, LIGHT EMITTING DEVICE, ILLUMINATION DEVICE, VEHICLE HEADLAMP, AND METHOD FOR MANUFACTURING SINTERED PHOSPHOR

METHOD FOR PRODUCING NITRIDE FLUORESCENT MATERIAL

Provided is a method for producing a nitride fluorescent material including: preparing a raw material mixture including a hydride containing at least one first alkaline earth metal element, at least one compound containing at least one second alkaline earth metal element and selected from an amide compound and an imide compound, a compound containing europium, a compound containing aluminum, and a compound containing silicon, wherein at least one of the compound containing europium, the compound containing aluminum, and the compound containing silicon is a nitride; and subjecting the raw material mixture to a heat treatment to obtain the nitride fluorescent material.

PHOSPHOR POWDER, COMPOSITE, AND LIGHT-EMITTING DEVICE

A phosphor powder composed of α-sialon phosphor particles containing Eu. With regard to the phosphor powder, a volume-based median diameter (D) determined by a laser diffraction scattering method is equal to or more than 10 μm and equal to or less than 20 μm, and a diffuse reflectance with respect to light at a wavelength of 600 nm is equal to or more than 93% and equal to or less than 99%. 111-. (canceled)12. A phosphor powder composed of α-sialon phosphor particles containing Eu ,{'sub': x', 'y', 'z', '12−(m+n)', 'm+n', 'n', '16−n, 'wherein the α-sialon phosphor particles are composed of an α-sialon phosphor containing an Eu element, represented by General Formula: (M1, M2, Eu)(SiAl)(ON) (provided that M1 is a monovalent Li element and M2 is a divalent Ca element), and in the general formula, x=0, 0 Подробнее

Phosphor powder and light emitting device

A phosphor powder of the present invention is a phosphor powder which contains an inorganic compound in which Eu as an activator is solid-soluted in a crystal represented by Ba26Si51O2N84or in an inorganic crystal having the same crystal structure as the crystal represented by Ba26Si51O2N84, and which is constituted such that in an emission spectrum obtained by irradiating the phosphor powder with excitation light having a wavelength of 450 nm, when a luminescence intensity at a peak wavelength in a range of equal to or more than 750 nm and equal to or less than 950 nm is P0, and when a luminescence intensity at a peak wavelength in a range of equal to or more than 520 nm and equal to or less than 600 nm is P1, 0.01≤P1/P0≤0.12 is satisfied by P0 and P1.

Phosphor powder, composite, and light-emitting device

A phosphor powder composed of α-sialon phosphor particles containing Eu. In a case where an internal quantum efficiency after the phosphor powder is held at 600° C. for 1 hour in an air atmosphere is defined as P1 and an internal quantum efficiency after the phosphor powder is held at 700° C. for 1 hour in an air atmosphere is defined as P2, P1 is equal to or more than 70% and (P1−P2)/P1×100 is equal to or less than 2.8%.

Narrow band emitting SiAION phosphor

This specification discloses methods of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4crystal structure type and having a composition of AE1−xLi3−2yAl1+y−zSizO4−4y−zN4y+z:Eux(AE=Ca, Sr, Ba, or a combination thereof, 0 Подробнее

OXIDE FLUORESCENT MATERIAL, LIGHT EMITTING DEVICE, AND METHOD FOR PRODUCING OXIDE FLUORESCENT MATERIAL

An oxide fluorescent material comprises: at least one first element Mselected from Li, Na, K, Rb, and Cs; at least one second element Mselected from Mg, Ca, Sr, Ba, and Zn; at least one third element Mselected from B, Al, Ga, In, and rare earth elements; at least one fourth element Mselected from Si, Ti, Ge, Zr, Sn, Hf, and Pb; O; and Cr, wherein when the molar ratio of the at least one fourth element Min 1 mol of the composition is 5, the molar ratio of the at least one first element Mis 0.7 or more and 1.3 or less, the molar ratio of the at least one second element Mis 1.5 or more and 2.5 or less, the molar ratio of the at least one third element Mis 0.7 or more and 1.3 or less, the molar ratio of oxygen is 12.9 or more and 15.1 or less, and the molar ratio of Cr is more than 0 and 0.2 or less, and wherein the oxide fluorescent material has a light emission peak wavelength in a range of 700 nm or more and 1,050 nm or less in a light emission spectrum of the oxide fluorescent material. 1. An oxide fluorescent material , having a composition comprising:{'sup': '1', 'at least one first element Mselected from the group consisting of Li, Na, K, Rb, and Cs;'}{'sup': '2', 'at least one second element Mselected from the group consisting of Mg, Ca, Sr, Ba, and Zn;'}{'sup': '3', 'at least one third element Mselected from the group consisting of B, Al, Ga, In, and rare earth elements;'}{'sup': '4', 'at least one fourth element Mselected from the group consisting of Si, Ti, Ge, Zr, Sn, Hf, and Pb;'}O (oxygen);Cr; and{'sup': '5', 'optionally at least one fifth element Mselected from the group consisting of Eu, Ce, Tb, Pr, Nd, Sm, Yb, Ho, Er, Tm, Ni, and Mn,'}{'sup': 4', '1', '2', '3, 'wherein when the molar ratio of the at least one fourth element Min 1 mol of the composition of the oxide fluorescent material is 5, the molar ratio of the at least one first element Mis in a range of 0.7 or more and 1.3 or less, the molar ratio of the at least one second element Mis in a range ...

Red phosphor and light emitting device

A phosphor having a main crystal phase having a crystal structure identical to that of CaAlSiN3, and including a Ca element partially replaced with an Eu element, wherein the phosphor has a median size d50 of 12.0 μm or more and 22.0 μm or less, as measured according to a laser diffraction scattering method, and has a specific surface area of 1.50 m2/g or more and 10.00 m2/g or less, as measured according to a BET method.

NARROW BAND EMITTING SIALON PHOSPHOR

PHOSPHOR POWDER, COMPOSITE, AND LIGHT-EMITTING DEVICE

A phosphor powder consisting of a red phosphor represented by a general formula (Srx, Ca1-x-y, Euy)AlSi(N,O)3having the same crystal phase as that of CaAlSiN3. In the general formula, relationships of x<1 and 1−x−y>0 are satisfied. In a case where a cumulative 10% value of the phosphor powder in a volume-based particle size distribution curve is defined as D10, a cumulative 50% value is defined as D50, and a cumulative 90% value is defined as D90, a value of D50is more than 20 μm and 40 μm or less, and a value of (D90−D10)/D50is 1.12 or less.

Method for producing nitride fluorescent material

Provided is a method for producing a nitride fluorescent material including: preparing a raw material mixture including a hydride containing at least one first alkaline earth metal element, at least one compound containing at least one second alkaline earth metal element and selected from an amide compound and an imide compound, a compound containing europium, a compound containing aluminum, and a compound containing silicon, wherein at least one of the compound containing europium, the compound containing aluminum, and the compound containing silicon is a nitride; and subjecting the raw material mixture to a heat treatment to obtain the nitride fluorescent material.

PHOSPHOR, LIGHT-EMITTING DEVICE, ILLUMINATION DEVICE, IMAGE DISPLAY DEVICE, AND INDICATOR LAMP FOR VEHICLE

A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and when, in a powder X-ray diffraction spectrum of the phosphor, the intensity of a peak that appears in a region where 2θ=38-39° is designated as Ix and the intensity of a peak that appears in a region where 2θ=37-38° is designated as Iy, the relative intensity Ix/Iy of Ix to Iy is 0.140 or less, and a light-emitting device comprising the phosphor.

PHOSPHOR PARTICLE, COMPOSITE, LIGHT-EMITTING DEVICE, AND METHOD FOR PRODUCING PHOSPHOR PARTICLE

An α-sialon phosphor particle containing Eu. At least one slit is formed on a surface of the α-sialon phosphor particle. The α-sialon phosphor particle is preferably produced by undergoing a raw material mixing step, a heating step, a pulverizing step, and an acid treatment step. 118-. (canceled)19. An α-sialon phosphor particle containing Eu ,wherein at least one slit is formed on a surface of the α-sialon phosphor particle,wherein a distance from the surface of the α-sialon phosphor particle to a bottom of the slit is equal to or more than 200 nm and equal to or less than 1,500 nm in at least one cross-section of the slit, and{'sub': x', 'y', 'z', '12−(m+n)', 'm+n', 'n', '16−n), 'wherein the α-sialon phosphor particle is formed of an α-sialon phosphor containing an Eu element, represented by General Formula: (M1, M2, Eu)(SiAl)(ON(provided that M1 is a monovalent Li element and M2 is a divalent Ca element), and in the general formula, x=0, 0P is ...

Methods For Generating Melatonin-Response-Tuned White Light With High Color Rendering

The present disclosure provides methods for generating tunable white light with controllable circadian energy performance. The methods use a plurality of LED to generate light with color points that fall within blue, yellow/green, red, and cyan color ranges, with each LED being driven with a separately controllable drive current in order to tune the generated light output. Different light emitting modes can be selected that utilize different combinations of the plurality of LED in order to tune the generated white light.

Fluorescent body and light-emitting device

A fluorescent body that has the same crystal structure as the crystal structure of CaAlSiN3 in the main crystal phase and is represented by the general formula MAlSiN3:Eu (wherein M represents one or more kinds of elements selected from among Sr, Mg, Ca and Ba), said fluorescent body satisfying the following requirements: the span value represented by (d90-d10)/d50 is 1.70 or less wherein d10, d50 and d90 (each expressed by [[mu]m]) are based on volume frequencies in particle size distribution measured by a laser diffraction scattering method; and d50 is 10.0 [mu]m or less [wherein d10, d50 and d90, which are based on volume frequencies in particle size distribution measured by a laser diffraction scattering method as described above, are measurement values obtained by using a liquid, which is prepared by adding 0.5 g of the fluorescent body to be measured into 100 ml of an ion-exchanged water solution containing 0.05 wt% of sodium hexametaphosphate, placing a chip of an ultrasonic homogenizer ...

PHOSPHOR, LIGHT-EMITTING DEVICE, IMAGE DISPLAY DEVICE, AND ILLUMINATION DEVICE

Provided is a phosphor that includes a crystal phase represented by the following Formula [1] and has a microstrain of 0.049% or less as calculated by the Halder-Wagner method: EuaSibAlcOdNe [1] (wherein, a, b, c, d, and e represent values satisfying the following respective ranges: 0 Подробнее

PHOSPHOR POWDER, COMPOSITE, AND LIGHT-EMITTING DEVICE

A phosphor powder composed of α-sialon phosphor particles containing Eu. The phosphor powder has an ammonium ion concentration Cof the phosphor powder of equal to or more than 15 ppm and equal to or less than 100 ppm, which is determined from the following extracted ion analysis. (Extracted Ion Analysis A) 0.5 g of a phosphor powder is added to 25 ml of distilled water in a polytetrafluoroethylene (PTFE)-made container with a lid and held at 60° C. for 24 hours, and then a total mass Mof ammonium ions included in an aqueous solution obtained by removing a solid content from the solution by filtration is determined using ion chromatography. Then, Cis determined by dividing Mby the mass of the phosphor powder. 1. A phosphor powder composed of α-sialon phosphor particles containing Eu ,{'sub': 'A', 'wherein an ammonium ion concentration Cof the phosphor powder, determined from the following extracted ion analysis A, is equal to or more than 15 ppm and equal to or less than 100 ppm,'}(Extracted Ion Analysis A){'sub': A', 'A', 'A, '0.5 g of a phosphor powder is added to 25 ml of distilled water in a polytetrafluoroethylene (PTFE)-made container with a lid and held at 60° C. for 24 hours, a total mass Mof ammonium ions included in an aqueous solution obtained by removing a solid content from the solution by filtration is then determined using ion chromatography. Then, Cis determined by dividing Mby a mass of the phosphor powder.'}2. The phosphor powder according to claim 1 ,{'sub': 'B', 'wherein an ammonium ion concentration Cof the phosphor powder, determined from the following extracted ion analysis B, is equal to or more than 50 ppm and equal to or less than 250 ppm,'}(Extracted Ion Analysis B){'sub': B', 'B', 'B, '0.5 g of a phosphor powder is added to 25 ml of distilled water in a polytetrafluoroethylene (PTFE)-made container with a lid and held at 80° C. for 24 hours, a total mass Mof ammonium ions included in an aqueous solution obtained by removing a solid content ...

LED white light device, preparation method thereof, and LED backlight module

The disclosure provides an LED white light device, including a blue light chip and phosphors. The blue light chip has a band of (455-470) nm. The phosphors include a dual-band yellow phosphor and a red phosphor having an excited light peak wavelength range of (610-660) nm. The yellow phosphor and the red phosphor are mixed according to a proportion of 1:(0.03-0.2) and cover the blue light chip, such that blue light emitted by the packaged LED white light device has a peak wavelength range of (450-465) nm. The disclosure also provides a preparation method of an LED white light device and an LED backlight module adopting the above LED white light device. The disclosure achieves the effects of blue light prevention, high color gamut and pure white simultaneously, Color uniformity and consistency are good, and a blue-green-red three-color continuous spectrum is provided, which is closer to a solar spectrum.

Narrow Band Emitting SiAlON Phosphor

This specification discloses methods of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4crystal structure type and having a composition of AE1−xLi3−2yAl1+y−zSizO4−4y−zN4y+z:Eux(AE=Ca, Sr, Ba, or a combination thereof, 0 Подробнее

DISPLAYS WITH EXPANDED GAMUT COVERAGE AND LOW BLUE LIGHT EMISSION

A display including a red subpixel, a green subpixel, a blue subpixel and a fourth subpixel including a teal subpixel or a saturated green pixel and an LED light source. Liquid crystal display devices including U6+-containing phosphors are also provided. Applications for the display include televisions, mobile phones and computer monitors.

PHOSPHOR POWDER AND LIGHT EMITTING DEVICE

A phosphor powder of the present invention is a phosphor powder which contains an inorganic compound in which Eu as an activator is solid-soluted in a crystal represented by Ba26Si51O2N84or in an inorganic crystal having the same crystal structure as the crystal represented by Ba26Si51O2N84, and which is constituted such that in an emission spectrum obtained by irradiating the phosphor powder with excitation light having a wavelength of 450 nm, when a luminescence intensity at a peak wavelength in a range of equal to or more than 750 nm and equal to or less than 950 nm is P0, and when a luminescence intensity at a peak wavelength in a range of equal to or more than 520 nm and equal to or less than 600 nm is P1, 0.01≤P1/P0≤0.12 is satisfied by P0 and P1.

LUMINESCENT GREENHOUSE GLAZING STRUCTURES

Fluorescent material and light-emitting device

This -type sialon fluorescent material is represented by formula 1, wherein with respect to D10, D50 and D90 (unit: [mu]m) as measured by a volume-basis laser diffraction/scattering method, D50 is 10 [mu]m or less, and the values of D10, D50 and D90 satisfy the relationship represented by formula 2. Formula 1: Si12-aAlaObN16-b:Eux (in the formula, 0 < a ≤ 3; 0 < b ≤ 3; 0 < x ≤ 0.1) Formula 2: (D90-D10)/D50 < 1.6 (Herein, D10, D50 and D90 (unit: [mu]m) are measured by a volume-basis laser diffraction/scattering method, and they are obtained by measuring 0.5 g of a fluorescent substance charged into 100 ml of an ion exchange aqueous solution with 0.05 wt% sodium hexametaphosphate mixed therein, the solution subjected to dispersion treatment using an ultrasonic homogenizer with a tip thereof placed at the center of the solution for 3 minutes at an oscillation frequency of 19.5 ± 1 kHz and an amplitude of 32 ± 2 [mu]m.).

PHOSPHOR AND LIGHT-EMITTING DEVICE

A β-type sialon phosphor represented by the following expression 1, in which D50 is 10 μm or less, and values of D10, D50, and D90 satisfy a relationship of the following expression 2 with respect to D10, D50, and D90 (each unit is [μm]) on a volume frequency basis as measured according to a laser diffraction/scattering method. Expression 1: SiAlON:Eu(wherein 0 Подробнее

Packaged white light emitting devices comprising photoluminescence layered structure

A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

Narrow band emitting SiAlON phosphor

This specification discloses a method of enhancing the stability and performance of Eu2+doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4crystal structure type and having a composition of AE1−xLi3−2yAl1+2y−zSizO4−4y−zN4y+z:EUx(AE=Ca, Sr, Ba; 0 Подробнее

LED-Filaments and LED-Filament Lamps

An LED-filament comprising: a partially light transmissive substrate; a plurality of LED chips on a front face of the substrate; a photoluminescence material that is in direct contact with and covers all of the plurality of LED chips; and a light scattering layer that is in direct contact with and covers at least the photoluminescence material, wherein the light scattering layer comprises particles of light scattering material, and wherein the photoluminescence material comprises broadband green to red photoluminescence materials and narrowband red photoluminescence material.

Green-emitting phosphors and devices thereof

A device including an LED light source optically coupled to a green-emitting U6+-doped phosphor having a composition selected from the group consisting of U6+-doped phosphate-vanadate phosphors, U6+-doped halide phosphors, U6+-doped oxyhalide phosphors, U6+-doped silicate-germanate phosphors, U6+-doped alkali earth oxide phosphors, and combinations thereof, is presented. The U6+-doped phosphate-vanadate phosphors are selected from the group consisting of compositions of formulas (A1)-(A12). The U6+-doped halide phosphors are selected from the group consisting of compositions for formulas (B1)-(B3). The U6+-doped oxyhalide phosphors are selected from the group consisting of compositions of formulas (C1)-(C5). The U6+-doped silicate-germanate phosphors are selected from the group consisting of compositions of formulas (D1)-(D11). The U6+-doped alkali earth oxide phosphors are selected from the group consisting of formulas (E1)-(E11).

B-SIALON PHOSPHOR AND LIGHT-EMITTING APPARATUS

A β-sialon phosphor represented by general formula: Si6−zAlzOzN8−z (0 Подробнее

Light emitting apparatus and method for manufacturing thereof

A light emitting apparatus includes a light emitting device emitting primary light and a wavelength conversion unit absorbing a part of the primary light to emit secondary light. The wavelength conversion unit includes a first wavelength conversion unit containing at least a nanocrystalline phosphor and a second wavelength conversion unit containing a rare-earth-activated phosphor or a transition-metal-element-activated phosphor. In the light emitting device, the first wavelength conversion unit and the second wavelength conversion unit are closely stacked in order.

Phosphor, production method thereof and light emitting instrument

A light emitting element includes a light-emitting source for emitting light at a wavelength of 330 to 500 nm and a constituent phosphor. The constituent phosphor includes a compound including M, A, Al, O, and N, where M is at least one kind of element selected from Mn, Ce, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb, and A is at least one kind of element selected from C, Si, Ge, Sn, B, Ga, In, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, Lu, Ti, Zr, Hf, Ta, and W.

Process for producing fluorescent substance and fluorescent substance produced thereby

The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a process for producing the fluorescent substance. This fluorescent substance is an oxynitride phosphor having a low paramagnetic defect density and comprising aluminum, silicon, either or both of oxygen and nitrogen, and a metal element M, provided that the metal element M is partly replaced with an emission center element R. That phosphor can be produced by the steps of: subjecting a mixture of starting materials to heat treatment under a nitrogen atmosphere so as to obtain an intermediate fired product, and then further subjecting the intermediate fired product to heat treatment under an atmosphere of nitrogen-hydrogen mixed gas.

Light emitting device and manufacturing method thereof

A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the following equation (1) and an average particle diameter of 12 μm or more. (M 1−x1 Eu x1 ) 3−y Si 13−z Al 3+z O 2+u N 21−w   (1) (In the equation ( 1 ), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x1, y, z, u, and w satisfy the following relationship. 0<x1<1, −0.1<y<0.3, −3<z≦1, −3<u−w≦1.5)

Light emitting device

A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.

Red light-emitting flourescent substance and light-emitting device employing the same

The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M 1-x EC x ) a M 1 b AlO c N d   (1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M 1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0<x<0.2, 0.55<a<0.80, 2.10<b<3.90, 0<c≦0.25 and 4<d<5, respectively. This substance emits luminescence having a peak in the wavelength range of 620 to 670 nm when excited by light of 250 to 500 nm.

Phosphor particle group and light emitting apparatus using the same

Provided is a phosphor particle group of divalent europium-activated oxynitride green light emitting phosphor particles each of which is a β-type SiAlON substantially represented by a general formula: EuaSibAlcOdNe, where 0.005≦a≦0.4, b+c=12, d+e=16, wherein 60% or more of the phosphor particle group is composed of the phosphor particles in which a value obtained by dividing a longer particle diameter by a shorter particle diameter is greater than 1.0 and not greater than 3.0. A high-efficiency and stable light emitting apparatus using a β-type SiAlON, which includes a light converter using the phosphor particle group, and a phosphor particle group therefor are also provided.

Efficient led-based illumination modules with high color rendering index

An illumination module includes a light mixing cavity with an interior surface area and window that are physically separated from an LED. A portion of the window is coated with a first wavelength converting material and a portion of the interior surface area is coated with a second wavelength converting material. The window may be coated with LuAG:Ce. The window may also be coated with a third wavelength converting material with a peak emission wavelength between 615-655 nm where the spectral response of light emitted from the window is within 20% of a blackbody radiator at the same CCT. The LED may emit a light that is converted by the light mixing cavity with a color conversion efficiency ratio greater than 130 lm/W where the light mixing cavity includes two photo-luminescent materials with a peak emission wavelengths between 508-528 nm and 615-655 nm.

Cerium and Europium Doped Phosphor Compositions and Light Emitting Devices Including the Same

Compounds of Formula I, which include both cerium and europium, may be useful as phosphors in solid state light emitting devices. Light emitting devices including such phosphors may emit warm white light.

Liquid crystal display

A liquid crystal display including a backlight and a filter, the backlight including a light-emitting device having a light-emitting element emitting blue light, and a green phosphor and a red phosphor absorbing a part of primary light emitted from the light-emitting element and emitting first secondary light and second secondary light, respectively, the green phosphor being a β-type SiAlON phosphor containing Eu and Al dissolved in a crystal of a nitride or an oxynitride having a β-type Si 3 N 4 crystal structure, and the filter including filters for colors of red (R), green (G), blue (B) and yellow (Y), respectively, arranged in a plane for subpixels provided in each pixel of the liquid crystal display, which attains excellent color reproducibility (NTSC ratio) and high luminance, can be provided.

Light-emitting device, white light-emitting device, illuminator, and image display

To achieve a light-emitting device emitting light with high brightness, closer to natural light, and less color shift due to a small change in intensity of emitted light, in a light-emitting device including a light source emitting light by driving current and at least one wavelength-converting material absorbing at least part of the light from the light source and emitting light having a different wavelength, the color coordinate x 1 (17.5) and the color coordinate y 1 (17.5) of the light emitted at a driving current density of 17.5 A/cm 2 and the color coordinate x 1 (70) and the color coordinate y 1 (70) of the light emitted at a driving current density of 70 A/cm 2 satisfy the following Expressions (D) and (E): −0.006≦ x 1 (17.5)− x 1 (70)≦0.006  (D), −0.006≦ y 1 (17.5)− y 1 (70)≦0.006  (E).

Red nitride phosphors

Provided according to embodiments of the invention are phosphor compositions that include Ca 1-x-y Sr x Eu y AlSiN 3 , wherein x is in a range of 0.50 to 0.99 and y is less than 0.013. Also provided according to embodiments of the invention are phosphor compositions that include Ca 1-x-y Sr x Eu y AlSiN 3 , wherein x is in a range of 0.70 to 0.99 and y is in a range of 0.001 and 0.025. Also provided are methods of making phosphors and light emitting devices that include a phosphor composition according to an embodiment of the invention.

Light-emitting device

Disclosed is a light-emitting device that exhibits good color rendering and highly efficiently emits white light in an incandescent bulb color range. The semiconductor light-emitting device ( 1 ) of the present invention includes: a semiconductor light-emitting element ( 2 ) that emits blue light; a green phosphor ( 14 ) that absorbs the blue light and emits green light; and an orange phosphor ( 13 ) that absorbs the blue light and emits orange light. The orange phosphor ( 13 ) produces an emission spectrum having a peak at a wavelength of equal to or greater than 590 nm but equal to or less than 630 nm and having a full width at half maximum of 130 nm or greater at the peak, the full width at half maximum of the emission spectrum of the orange phosphor ( 13 ) being broader than a full width at half maximum of an emission spectrum of the green phosphor ( 14 ). The orange phosphor ( 13 ) exhibits an absorptance having a peak wavelength of 420 nm or greater. ABS(530) and ABS(MAX) satisfy a relation, ABS(530)/ABS(MAX)<0.60, where ABS(MAX) is an absorptance of the orange phosphor ( 13 ) at the peak wavelength thereof, and ABS(530) is an absorptance of the orange phosphor ( 13 ) at a wavelength of 530 nm.

White light emitting lamp and white led lighting apparatus including the same

An object is to provide a white light emitting lamp 1 comprising: a semiconductor light emitting element 2 which is placed on a board 3 and emits ultraviolet light or blue light; and a light emitting portion that is formed so as to cover a light emitting surface of the semiconductor light emitting element 2 , the light emitting portion containing a blue phosphor B, a green phosphor G, a red phosphor R and a deep red phosphor DR that are excited by the light emitted from the semiconductor light emitting element 2 to respectively emit blue light, green light, red light and a deep red light, the white light emitting lamp 1 emitting white light by mixing light emission colors from the blue phosphor B, the green phosphor G, the red phosphor R and a deep red phosphor DR with one another, wherein the deep red phosphor DR has a main emission peak in a longer wavelength region than a main emission peak of the red phosphor, the red phosphor R comprises at least one component selected from: a europium-activated SiAlON phosphor and a europium-activated CASN phosphor each having a predetermined composition, while the deep red phosphor DR comprises a manganese-activated magnesium florogermanate phosphor having a predetermined composition. According to the above white light emitting lamp, when the BGR phosphor is used in combination with the semiconductor element such as an LED or the like, and a deep red phosphor DR having a predetermined composition is further added in addition to the red phosphor R, so that luminance characteristics can be improved, whereby there can be provided a white light emitting lamp excellent in both high luminance and high color rendering properties.

Light emitting device and method for producing the same

A light emitting device includes a light emitting element that emits primary light and a wavelength conversion unit that absorbs part of the primary light and emits secondary light. In the light emitting device, the wavelength conversion unit includes a plurality of types of phosphors that emit secondary light having wavelengths different from each other, and at least one of the phosphors is a covered phosphor covered with a surface film that reflects secondary light emitted from a phosphor other than the covered phosphor.

Semiconductor light-emitting device, semiconductor light-emitting system and illumination fixture

The present invention provides a semiconductor light-emitting device that emits light with a specific low correlated color temperature and with a high Ra, and a semiconductor light-emitting system provided with the semiconductor light-emitting device. This object is attained by the semiconductor light-emitting device having the below-described configuration. A semiconductor light-emitting device includes a LED chip as a semiconductor light-emitting element, and a phosphor emitting light using the LED chip as an excitation source, and emits light with a correlated color temperature equal to or higher than 1600 K and lower than 2400 K. The phosphor includes at least a green phosphor and a red phosphor. In the spectrum of light emitted from the semiconductor light-emitting device, the value of the peak intensity of the light emitted by the LED chip is less than 60% of the maximum peak intensity of the light emitted by the phosphor.

Oxynitride luminescent material, preparation method thereof and illumination light source made from such material

A nitrogen oxide luminescence material, with chemical formula: M 1−y X 4−x Z 1+x O x N 7−x x: R y , in which M represents one or several alkali, alkaline earth, rare earth and transition metals. X represents Si with one or several of Si, Ge, B and Al. Z represents Al with one or several of Al, Ga, In. R represents one or several of luminescence center elements Eu, Ce, Tb, Yb, Sm, Pr and Dy. In the formula, 0≦x<0.5, 0<y<1.0. The luminescence material can be excited by ultraviolett, near ultraviolet or blue light, and emits yellow or red light with wavelength between 500-750 nm. With the ultraviolet, near ultraviolet or blue lights, and other types of luminescence materials, such as green fluorescent powder, a new white LED can be obtained. The luminescence material has a wider excitation spectrum range, and is efficient and stable. Preparation is simple, easy to mass-produce and pollution-free.

METHOD FOR PREPARING A ß-SIAION PHOSPHOR

There is provided a method for preparing a β-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a β-SiAlON phosphor represented by Formula: Si (6-x) Al x O y N (8-y) :Ln z (wherein, Ln is a rare earth element, and the following requirements are satisfied: 0<x≦4.2, 0<y≦4.2, and 0<z≦1.0) includes: mixing starting materials to prepare a raw material mixture; and heating the raw material mixture in a nitrogen-containing atmospheric gas, wherein the starting materials includes a host raw material including a silicon raw material including metallic silicon, and at least one aluminum raw material selected from the group consisting of metallic aluminum and aluminum compound, and at least activator raw material selected from the rare earth elements for activating the host raw material.

Carbidonitride phosphors and LED lighting devices using the same

A red phosphor is provided. Also provided is a lighting apparatus containing a red phosphor.

Light-emitting device

Disclosed is a light-emitting device ( 1 ) including a light-emitting element ( 2 ) emitting primary light, and a light converter ( 3 ) absorbing a part of the primary light emitted from the light-emitting element ( 2 ) and emitting secondary light having a longer wavelength than the primary light. The light converter ( 3 ) contains a green light-emitting phosphor ( 4 ) and a red light-emitting phosphor ( 5 ). The green light-emitting phosphor ( 4 ) is composed of at least one phosphor selected from a divalent europium-activated oxynitride phosphor substantially represented by the following formula: Eu a Si b Al c O d N e and a divalent europium-activated silicate phosphor substantially represented by the following formula: 2(Ba 1-f-g MI f Eu g )O.SiO 2 , while the red light-emitting phosphor ( 5 ) is composed of at least one phosphor selected from tetravalent manganese-activated fluoro-tetravalent metalate phosphors substantially represented by the following formulae: MII 2 (MIII 1-h Mn h )F 6 and/or MIV(MIII 1-h Mn h )F 6 . Consequently, the light-emitting device ( 1 ) has excellent color gamut (NTSC ratio).

Phosphors and method for producing thereof

The present embodiments provide a europium-activated oxynitride phosphor and a production method thereof. This phosphor emits red luminescence having a peak at 630 nm or longer and can be produced by use of inexpensive oxides as raw materials containing alkaline earth metals such as strontium. The oxynitride phosphor is activated by a divalent europium and represented by the formula (1): (M 1-x Eu x )Al a Si b O c N d C e   (1). In the formula, M is an alkaline earth metal, and x, a, b, c, d and e are numbers satisfying the conditions of 0<x<0.2, 1.3≦a≦1.8, 3.5≦b≦4, 0.1≦c≦0.3, 6.7≦d≦7.2 and 0.01≦3≦0.1, respectively.

Semiconductor light-emitting device, exhibit-irradiating illumination device, meat-irradiating illumination device, vegetable-irradiating illumination device, fresh fish-irradiating illumination device, general-purpose illumination device, and semiconductor light-emitting system

The present invention provides a semiconductor light-emitting device which emits light with high chroma, and an exhibit-irradiating illumination device, a meat-irradiating illumination device, a vegetable-irradiating illumination device, a fresh fish-irradiating illumination device, a general-purpose illumination device, and a semiconductor light-emitting system which include the semiconductor light-emitting device. A semiconductor light-emitting device 1 comprises an LED chip 10 as a semiconductor light-emitting element and a phosphor 20 which uses the LED chip 10 as an excitation source to emit light. The phosphor contains at least a green phosphor and a red phosphor, and a value of intensity of light with a wavelength of 660 nm in a spectrum of beam-normalized light emitted from the semiconductor light-emitting device 1 is 170% or more and 300% or less of a value of intensity of light with a wavelength of 660 nm in a spectrum of beam-normalized reference light for color rendering evaluation.

Phosphor manufacturing method

A method for producing a silicate-based oxynitride phosphor, comprising a step of firing a raw material mixture while contacting the raw material mixture with a Si-containing gas containing gas phase Si to generate a silicate-based oxynitride phosphor.

Process for producing fluorescent substance and fluorescent substance produced thereby

The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a process for producing the fluorescent substance. This fluorescent substance is an oxynitride phosphor having a low paramagnetic defect density and comprising aluminum, silicon, either or both of oxygen and nitrogen, and a metal element M, provided that the metal element M is partly replaced with an emission center element R. That phosphor can be produced by the steps of: subjecting a mixture of starting materials to heat treatment under a nitrogen atmosphere so as to obtain an intermediate fired product, and then further subjecting the intermediate fired product to heat treatment under an atmosphere of nitrogen-hydrogen mixed gas.

Beta-sialon phosphor and method for producing the same, and light-emitting member and light emitting device

Provided is a β-sialon phosphor having a β-sialon as a host crystal and containing Eu as a luminescent center, wherein when chemical states of Eu are classified into three states: Eu 2+ , Eu 3+ and an intermediate state thereof (hereinafter, referred to as Eu m ), a ratio of them present in the β-sialon phosphor satisfies the relationships: 0.1<Eu m /(Eu 2+ +Eu 3+ +Eu m )<0.4 and Eu 2+ /(Eu 2+ +Eu 3+ )>0.7.

Lighting device

A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; −3.5≤u≤4; 3.5≤v≤4; (−0.2) w≤0.2 and 0≤m<0.875 v and/or v≥l>0.125 v.

Phosphor composition, light-emitting device package comprising same, and lighting apparatus

An embodiment relates to a phosphor composition, a light-emitting device package comprising the same, and a lighting apparatus and, more particularly, to a phosphor composition comprising a first phosphor, excited by an excitation light source, for emitting a first wavelength range of light, a second phosphor, excited by the excitation light source, for emitting a second wavelength range of light, and a third phosphor, excited by the excitation light source, for emitting a third wavelength range of light. The light emitted from the phosphor composition exhibits an increased intensity of light in a blue-green wavelength region with the consequent improvement of color rendering index and a shortened wavelength of light in a red wavelength region with the consequent improvement of luminous flux.

Composite Ceramic Wavelength Converter and Light Source Having Same

There is herein described a composite ceramic wavelength converter having a first phase of an α-SiAlON:Eu phosphor and a second phase of a β-SiAlON:Eu phosphor. The converter may be used in a phosphor-converted light emitting diode to form a light source having a correlated color temperature (CCT) from 2000K to 4500K.

White Light Illumination System with Narrow Band Green Phosphor and Multiple-Wavelength Excitation

A white light illumination system may comprise: a phosphor package; a first radiation source for providing co-excitation radiation to the phosphor package, the source emitting in wavelengths ranging from about 250 nm to about 410 nm; and a second radiation source for providing co-excitation radiation to the phosphor package, the source emitting in wavelengths ranging from about 410 nm to about 540 nm; wherein the phosphor package is configured to emit photoluminescence in wavelengths ranging from about 440 nm to about 700 nm upon co-excitation from the first and second radiation sources, and wherein the phosphor package comprises at least one narrow band green phosphor with a photoluminescence peak with a full width at half maximum of less than 60 nm, and wherein the narrow band green phosphor is configured to emit photoluminescence in wavelengths ranging from about 500 nm to about 550 nm.

Semiconductor Illuminating Device

A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the LED phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope m 1 and a y-intercept n 1 in a CIE standard chromaticity diagram, with the slope m 1 =1.189 and the y-intercept n 1 =0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 K.

Phosphor Particles with a Protective Layer, and Method for Producing the Phosphor Particles with the Protective Layer

Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.

Fluorescent substance and light-emitting device employing the same

The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element M 1 other than the metal element M, a tetravalent element M 2 other than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as Sr 3 Al 3 Si 13 O 2 N 21 , but the chemical bond lengths of M 1 -N and M 2 -N are within the range of ±15% based on those of Al—N and Si—N calculated from the lattice constants and atomic coordinates of Sr 3 Al 3 Si 13 O 2 N 21 , respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.

Compositions for led light conversions

Systems and methods to provide multiple channels of light to form a blended white light output, the systems and methods utilizing recipient luminophoric mediums to alter light provided by light emitting diodes. The predetermined blends of luminescent materials within the luminophoric mediums provide predetermined spectral power distributions in the white light output.

PHOSPHOR PARTICLE, COMPOSITE, LIGHT-EMITTING DEVICE, AND METHOD FOR PRODUCING PHOSPHOR PARTICLE

An α-sialon phosphor particle containing Eu. At least one minute recess is formed on a surface of the α-sialon phosphor particle. The α-sialon phosphor particle is preferably produced by undergoing a raw material mixing step, a heating step, a pulverizing step, and an acid treatment step. 1. An α-sialon phosphor particle containing Eu ,wherein at least one minute recess is formed on a surface of the α-sialon phosphor particle;wherein in one cross-section that crosses the minute recess, a depth is equal to or more than 5 nm and equal to or less than 500 nm, and{'sub': x', 'y', 'z', '12−(m+n', 'm+n', 'n', '16−n, 'wherein the α-sialon phosphor particle is formed of an α-sialon phosphor containing an Eu element, represented by General Formula: (M1, M2, Eu) (SiAl)(ON) (provided that M1 is a monovalent Li element and M2 is a divalent Ca element), and in the general formula, x=0, 0 Подробнее

Method for manufacturing light-emitting device

A method of manufacturing a light-emitting device includes applying a light-guiding member to a light-emitting element. A light-transmissive member is mounted on the light-guiding member, and the light-guiding member is cured. A width of the light-transmissive member is narrowed. Lateral surfaces of the light-transmissive member and lateral surfaces of the light-guiding member are covered.

Fluorophor and method for production thereof and illuminator

A fluorophor includes: α-type sialon crystal which is expressed by a general formula: (Li x1 , Eu x2 ) (Si 12−(m+n) Al m+n )(O n N 16−n ), wherein x1 is an amount of solid solution of Li in a sialon unit cell, and x2 is an amount of solid solution of Eu in the sialon unit cell, wherein the parameters x1, x2, m, and n satisfy: 1.6≦x1≦2.4 (1), 0.001≦x2≦0.4 (2), 1.8≦m≦2.4 (3), 0.8≦n≦1.2 (4), wherein the α-type sialon crystal emits fluorescence with a peak in a wavelength region of from 550 nm to 575 nm upon irradiation of an excitation source.

Lighting device

A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA) a (MB) b (MC) c (MD) d (TA) e (TB) f (TC) g (TD) h (TE) i (TF) j (XA) k (XB) l (XC) m (XD) n :E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; −3.5≤u≤4; 3.5≤v≤4; (−0.2)≤w≤0.2 and 0≤m<0.875 v and/or v≥l>0.125 v.

REFLECTOR AND IRRADIATION DEVICE

A reflector includes a reflector body that reflects light emitted from a light source and a phosphor layer that is provided on the reflector body and includes a phosphor excited by the light emitted from the light source. 1. A reflector comprising:a reflector body that reflects light emitted from a light source; anda phosphor layer that is provided on the reflector body and includes a phosphor excited by the light emitted from the light source.2. The reflector according to claim 1 ,wherein the phosphor is at least one selected from the group consisting of an α-type sialon phosphor containing Eu, a β-type sialon phosphor containing Eu, a CASN phosphor containing Eu, and a SCASN phosphor containing Eu.3. An irradiation device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the reflector according to ; and'}a light source that emits light which is reflected by the reflector and excites the phosphor.4. The irradiation device according to claim 3 , further comprising:another reflector that further reflects the light reflected by the reflector or reflects the light emitted from the light source toward the reflector.5. The irradiation device according to claim 4 ,wherein the other reflector is the reflector that further reflects the light reflected by the reflector, andan area of a light reflecting surface in the reflector is smaller than an area of a light reflecting surface in the other reflector.6. An irradiation device comprising:a light source;a first reflector that is disposed at a predetermined reflection position and reflects light emitted from the light source;a second reflector that is disposed at the reflection position and reflects the light emitted from the light source; anda moving portion that moves the first reflector and the second reflector and is capable of switching between a first state in which one of the first reflector and the second reflector is disposed at the reflection position and the other is disposed at a non-reflection position ...

Methods for generating melatonin-response-tuned white light with high color rendering

The present disclosure provides methods for generating tunable white light with controllable circadian energy performance. The methods use a plurality of LED strings to generate light with color points that fall within blue, yellow/green, red, and cyan color ranges, with each LED string being driven with a separately controllable drive current in order to tune the generated light output. Different light emitting modes can be selected that utilize different combinations of the plurality of LED strings in order to tune the generated white light. One or more of the LED strings can have ultraviolet or violet LEDs.

Light-emitting device

Provided is a light-emitting device including a light-emitting element having a peak emission wavelength in a range of from 400 nm to 470 nm, and a fluorescent member including a first fluorescent material including an aluminate that contains Mg, Mn, and at least one alkali earth metal selected from the group consisting of Ba, Sr, and Ca, a second fluorescent material having a different composition from the first fluorescent material, and a third fluorescent material. The first, second and third fluorescent materials have a peak emission wavelength in a range of from 510 nm to 525 nm, from 510 nm to 550 nm, and from 620 nm to 670 nm, respectively.

Wavelength conversion member, and light emitting device using same

Provided is a wavelength conversion member that is less decreased in luminescence intensity with time by irradiation with light of an LED or LD and a light emitting device using the wavelength conversion member. A wavelength conversion member is formed of an inorganic phosphor dispersed in a glass matrix, wherein the glass matrix contains, in % by mole, 30 to 85% SiO2, 4.3 to 20% B2O3, 0 to 25% Al2O3, 0 to 3% Li2O, 0 to 3% Na2O, 0 to 3% K2O, 0 to 3% Li2O+Na2O+K2O, 0 to 35% MgO, 0 to 35% CaO, 0 to 35% SrO, 0 to 35% BaO, 0.1 to 45% MgO+CaO+SrO+BaO, and 0 to 5% ZnO, and the inorganic phosphor is at least one selected from the group consisting of an oxide phosphor, a nitride phosphor, an oxynitride phosphor, a chloride phosphor, an oxychloride phosphor, a halide phosphor, an aluminate phosphor, and a halophosphoric acid chloride phosphor.

A DISPERSION COMPRISING EU2+ DOPED INORGANIC LUMINESCENT NANOPARTICLES FOR GREENHOUSE APPLICATIONS AND SHEET STRUCTURES AND COATINGS FOR GREENHOUSES COMPRISING SUCH NANOPARTICLES

A luminescent layer is described comprising an Eu doped inorganic luminescent material comprising or consisting essentially of the elements Al and/or Si and the elements O and/or N, the doped inorganic luminescent material converting radiation of the UV region between 200 nm and 400 nm of the solar spectrum into the photosynthetically active radiation (PAR) region (400 nm-700 nm) of the solar spectrum, wherein the Si concentration in the inorganic luminescent material is selected between 0 and 45 at. %, the Al concentration between 0 and 50 at. %, the O concentration between 0 and 70 at. %, the N concentration between 0 and 60 at. % and the Eu between 0.01 and 30 at. %. 1. A dispersion of luminescent nanoparticles for coating a greenhouse glazing structure , said dispersion comprising:an organic or aqueous medium; andluminescent nanoparticles,{'sup': 2+', '2+', '2+, 'wherein the nanoparticles comprise Eu doped SiAlON and the Eu doped SiAlON has a Si concentration between 0 at. % and 33 at. %, an Al concentration between 0 at. % and 40 at. %, an O concentration between 50 at. % and 66 at. %, an N concentration between 0 at. % and 10 at. % and an Eu concentration between 0.0001 at. % and 5 at. %.'}2. The dispersion according to claim 1 ,{'sup': '2+', 'wherein the Si concentration is between 15 at. % and 33 at. %, the Al concentration is between 0.001 at. % and 12 at. %, the O concentration is between 50 at. % and 66 at. %, the N concentration is between 0.1 at. % and 5 at. % and the Eu concentration is between 0.0001 at. % and 3 at. %.'}3. The dispersion according to claim 1 , wherein the nanoparticles have an average particle size between 1 nm and 1000 nm.4. The dispersion according to claim 1 , wherein the dispersion comprises between 1 wt. % and 80 wt. % of the nanoparticles.5. The dispersion according to claim 1 , wherein the dispersion comprises the organic medium and the organic medium comprises an organic solvent and between 0.5 wt. % and 10 wt. % of polymer ...

White light source system

According to one embodiment, there is provided a white light source system including white light sources. An absolute value of a difference between (P(λ)×V(λ))/(P(λmax1)×V(λmax1)) and (B(λ)×V(λ))/(B(λmax2)×V(λmax2)) for each of the white light sources satisfies a relational expression represented by |(( P (λ)× V (λ))/( P (λmax1)× V (λmax1))−( B (λ)× V (λ))/( B (λmax2)× V (λmax2))|≤0.15 The white light source system has a light emission characteristic of white light emitted by the system is continuously changed along with an elapse of time by changing a mixing ratio of light beams from the white light sources.

LED white light device, preparation method thereof, and LED backlight module

The disclosure provides an LED white light device, including a blue light chip and phosphors. The blue light chip has a band of (455-470) nm. The phosphors include a dual-band yellow phosphor and a red phosphor having an excited light peak wavelength range of (610-660) nm. The yellow phosphor and the red phosphor are mixed according to a proportion of 1:(0.03-0.2) and cover the blue light chip, such that blue light emitted by the packaged LED white light device has a peak wavelength range of (450-465) nm. The disclosure also provides a preparation method of an LED white light device and an LED backlight module adopting the above LED white light device. The disclosure achieves the effects of blue light prevention, high color gamut and pure white simultaneously, the color uniformity and consistency are good, and a blue-green-red three-color continuous spectrum is provided, which is closer to a solar spectrum. 1. An LED white light device , comprising a blue light chip and phosphors , wherein the blue light chip has a band of (455-470) nm;the phosphors comprise a dual-band yellow phosphor and a red phosphor having an excited light peak wavelength range of (610-660) nm; andthe yellow phosphor and the red phosphor are mixed according to a proportion of 1:(0.03-0.2) and cover the blue light chip, such that blue light emitted by the packaged LED white light device has a peak wavelength range of (450-465) nm, and a ratio of energy of a spectrum of the packaged LED white light device to energy of a blue light spectrum having a wavelength range of (400-450) nm is 1:(0.05-0.2).2. The LED white light device as claimed in claim 1 , wherein white light of the LED white light device has a chromaticity coordinate range of CIE x: 0.22-0.32 and CIE y: 0.20-0.32.3. The LED white light device as claimed in claim 1 , wherein the LED white light device has an NTSC color gamut value that is greater than or equal to 70%.4. The LED white light device as claimed in claim 1 , wherein the ...

NARROW BAND EMITTING SiAlON PHOSPHOR

This specification discloses a method of enhancing the stability and performance of Eudoped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCrCcrystal structure type and having a composition of AELiAlSiON:EU(AE=Ca, Sr, Ba; 0 Подробнее

Green-emitting, garnet-based phosphors in general and backlighting applications

Disclosed herein are green-emitting, garnet-based phosphors having the formula (Lu 1−a−b−c Y a Tb b A c ) 3 (Al 1−d B d ) 5 (O 1−e C e ) 12 :Ce,Eu, where A is selected from the group consisting of Mg, Sr, Ca, and Ba; B is selected from the group consisting of Ga and In; C is selected from the group consisting of F, Cl, and Br; and 0≦a≦1; 0≦b≦1; 0<c≦0.5; 0≦d≦1; and 0<e≦0.2. These phosphors are distinguished from anything in the art by nature of their inclusion of both an alkaline earth and a halogen. Their peak emission wavelength may lie between about 500 nm and 540 nm; in one embodiment, the phosphor (Lu,Y,A) 3 Al 5 (O,F,Cl) 12 :Eu 2+ has an emission at 540 nm. The FWHM of the emission peak lies between 80 nm and 150 nm. The present green garnet phosphors may be combined with a red-emitting, nitride-based phosphor such as CaAlSiN 3 to produce white light.

Led drive circuit

An LED drive circuit ( 1 ) includes a controller ( 5 ) which controls a duty ratio of a PWM signal and driving current for driving a blue LED chip ( 7 B) with a blue LED driver ( 3 B) based on blue light, green light, and red light which are received by a photo sensor ( 4 ).

Oxynitride phosphor powder, silicon nitride powder for production of oxynitride phosphor powder, and production method of oxynitride phosphor powder

An oxynitride phosphor powder contains α-SiAlON and aluminum nitride, obtained by mixing a silicon source, an aluminum source, a calcium source, and a europium source to produce a composition represented by a compositional formula: Ca x1 Eu x2 Si 12-(y+z) Al (y+z) O z N 16-z (wherein x1, x2, y and z are 0<x1≦3.40, 0.05≦x2≦0.20, 4.0≦y≦7.0, and 0≦z≦1), and firing the mixture.

Dimmable Solid-State Light Emitting Devices

A white light emitting device or LED-filament comprises: a solid-state light emitter (LED) operable to generate excitation light; a first phosphor associated with the solid-state light emitter to generate light with a peak emission wavelength in a range 500 nm to 575 nm; and a second phosphor associated with the solid-state light emitter to generate light with a peak emission wavelength in a range 600 nm to 650 nm, wherein a percentage decrease in conversion efficiency corresponding to an increase in excitation light photon density exhibited by the second phosphor is larger than a percentage decrease in conversion efficiency corresponding to the same increase in excitation light photon density exhibited by the first phosphor.

Lighting device comprising at least two sets of LEDs

The invention provides a lighting device ( 100 ) comprising a first set of light emitting diodes ( 10 ) arranged to emit light ( 14 ) in a first wavelength range of 300 nm-490 nm, a second set of light emitting diodes ( 11 ) arranged to emit light ( 15 ) in a second wavelength range of 300 nm-490 nm, a first luminescent element ( 12 ) radiationally coupled to the first and second set of light emitting diodes and arranged to convert at least a part of the light of the first wavelength range and at least a part of the light of the second wavelength range into first luminescent element light, a second luminescent element ( 13 ) radiationally coupled to at least a subset of the second set of light emitting diodes and arranged to convert at least a part of the light ( 15 ) of the second wavelength range into second luminescent element light, wherein, during operation, the brightness level of the light ( 14 ) emitted by the first set of light emitting diodes ( 10 ) and the brightness level of the light ( 15 ) emitted by the second set of light emitting diodes ( 11 ), respectively, is controllable independently of each other and wherein the lighting device is arranged to generate white lighting device light ( 101 ).

Wavelength converting member, light-emitting device, and method for producing wavelength converting member

A wavelength converting member includes silica glass and a plurality of fluorescent material particles including an oxynitride or nitride fluorescent material and dispersed in the silica glass. The plurality of fluorescent material particles include at least two kinds of fluorescent material particles including (i) first fluorescent material particles that emit a fluorescence having a first peak wavelength and (ii) second fluorescent material particles that emit a fluorescence having a second peak wavelength. The wavelength converting member has a density within a range from 0.8 g/cm 3 to 1.2 g/cm 3 .

Fluorescent body, light source, and biochemical analyzer

The present invention improves the performance of an analyzer and facilitates the maintenance of the analyzer. This fluorescent body is produced by firing a raw material which contains: an alumina; and at least one among Fe, Cr, Bi, Tl, Ce, Tb, Eu, and Mn, wherein the raw material contains 6.1-15.9 wt % of sodium with respect to the total amount of the raw material.

Wavelength converter, light-emitting device using same, and production method for wavelength converter

A wavelength converter is provided with a light-transmitting substrate and with a thin film that is formed on a surface of the light-transmitting substrate and that contains a phosphor. A sintered body that constitutes the light-transmitting substrate has an average particle size of 5-40 μm. The light-transmitting substrate contains at least 10-500 ppm by mass of MgO. The principal component of the phosphor is an α-sialon that is indicated by the general formula (Ca α ,Eu β ) (Si,Al) 12 (O,N) 16 (provided that 1.5<α+β<2.2, 0<β<0.2, and O/N≦0.04).

Led-based illumination modules with thin color converting layers

An illumination module includes a plurality of Light Emitting Diodes (LEDs). The illumination module may include a reflective color converting element with a PTFE layer and a color converting layer fixed to the PTFE layer. The color converting layer includes phosphor particles embedded in a polymer matrix and has a thickness that is less than five times an average diameter of the phosphor particles. The illumination module may include a transmissive color converting element. The color converting elements may be produced by mixing a polymer binder with a solvent and phosphor particles to form a homogeneous suspension of the phosphor particles. The homogeneous suspension is applied to a surface to form an uncured color converting layer, which is heated to vaporize the solvent. The cured color converting layer includes the phosphor particles suspended in the polymer binder

Charged Particle Radiation Measuring Method And Charged Particle Radiation Measuring Device

[Problem] To provide highly heat-resistant and radiation-resistant radiation measuring equipment. [Solution] Provided are a charged particle radiation measuring method and a charged particle radiation measuring device using a scintillator comprising a phosphor in which the main component is a SiAlON phosphor.

Conversion Element, Radiation-Emitting Semiconductor Device and Method for Producing a Conversion Element

A conversion element, a radiation-emitting semiconductor device and a method for producing a conversion element are disclosed. In an embodiment a conversion element includes a ceramic luminescent material and a flux material, wherein the flux material has a boiling temperature above 1500° C. and/or a melting temperature below 1500° C., and wherein the flux material has a concentration in the conversion element between at least 0.01 wt % and at most 1 wt %.

System and method for selected pump leds with multiple phosphors

An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Led based device with wide color gamut

The invention provides a lighting unit comprising a source of blue light, a source of green light, a first source of red light comprising a first red luminescent material, configured to provide red light with a broad band spectral light distribution, and a second source of red light comprising a second red luminescent material, configured to provide red light with a spectral light distribution comprising one or more red emission lines. Especially, the first red luminescent material comprises (Mg,Ca,Sr)AlSiN 3 :Eu and/or (Ba,Sr,Ca) 2 Si 5-x Al x O x N 8-x :Eu, and the second red luminescent material comprises K 2 SiF 6 :Mn.

Red phosphor, method for producing red phosphor, white light source, illuminating device, and liquid crystal display device

A compound is provided containing silicon, aluminum, strontium, europium, nitrogen, and oxygen is used that enables a red phosphor having strong luminous intensity and high luminance to be obtained, and that enables the color gamut of a white LED to be increased with the use of red phosphor. The red phosphor contains element A, europium, silicon, aluminum, oxygen, and nitrogen at the atom number ratio of the following formula: [A m−x )Eu x ]Si 9 Al y O n N [12+y−2(n−m)/3] . The element A in the formula is at least one of magnesium, calcium, strontium, and barium, and m, x, y, and n in the formula satisfy the relations 3<m<5, 0<x<1, 0<y<2, and 0<n<10.

Materials for photoluminescence wavelength converted solid-state light emitting devices and arrangements

A photoluminescence material paste comprises: a first inorganic photoluminescence material having a first density, a second inorganic photoluminescence material having a second density and a light transmissive non-curable silicone fluid that is not curable by itself. The first density of the first inorganic photoluminescence material is different from the second density of the second inorganic photoluminescence material. The first and second inorganic photoluminescence materials are substantially homogenously distributed within the light transmissive non-curable silicone fluid to form the photoluminescence material paste. A weight loading of the first and second photoluminescence materials in the photoluminescence material paste is in a range of about 60% to about 95%.

Light emitting diode

A light emitting apparatus, including: a substrate; a light emitting diode disposed on the substrate; and a lens covering the light emitting diode. The light emitting diode includes a light emitting diode chip; a first molding portion covering the light emitting diode chip; a second molding portion covering the first molding portion. The first molding portion includes one or more kinds of phosphors and the second molding portion contains no phosphors. The light emitting diode chip is covered by a first molding portion having a high index of refraction and a second molding portion having a low index of refraction and covering the first molding portion in order to reduce total reflection in the molding portions through reduction in difference in index of refraction between external air and the molding portion having a high index of refraction, thereby increasing the quantity of light.

Light emitting device

This light emitting device is provided with: a light emitting element which emits excitation light; and a far-red phosphor which is excited by the light of the light emitting element and emits light that has a peak wavelength within the range of 700-800 nm. The far-red phosphor has a median diameter within the range of 1-20 μm.

Phosphor Particles with a Protective Layer, and Method for Producing the Phosphor Particles with the Protective Layer

Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.

Method for producing beta-sialon fluorescent material

A method for producing a β-sialon fluorescent material is provided. The method includes heat-treating a mixture containing an aluminium compound, a first europium compound, and silicon nitride to obtain a first heat-treated product; and heat-treating the first heat-treated product with a second europium compound in a rare gas atmosphere to obtain a second heat-treated product.

Light-converting material

The present invention relates to a light-converting material which comprises a luminescent material with semiconductor nanoparticles (quantum materials), where the semiconductor nanoparticles are located on the surface of the luminescent material and the emission from the semiconductor nanoparticles is in the region of the emission from the luminescent material. The present invention furthermore relates to a process for the preparation of the light-converting material and to the use thereof in a light source. The present invention furthermore relates to a light-converting mixture, a light source, a lighting unit which contains the light-converting material according to the invention, and a process for the production thereof.

Nitride-based red phosphors

Embodiments of the present invention are directed to the fluorescence of a nitride-based deep red phosphor having at least one of the following novel features: 1) an oxygen content less than about 2 percent by weight, and 2) a halogen content. Such phosphors are particularly useful in the white light illumination industry, which utilizes the so-called “white LED.” The selection and use of a rare earth halide as a raw material source of not only the activator for the phosphor, but also the halogen, is a key feature of the present embodiments. The present phosphors have the general formula M a M b B C (N,D):Eu 2+ , where M a is a divalent alkaline earth metal such as Mg, Ca, Sr, Ba; M b is a trivalent metal such as Al, Ga, Bi, Y, La, and Sm; and M c is a tetravalent element such as Si, Ge, P, and B; N is nitrogen, and D is a halogen such as F, Cl, or Br. An exemplary compound is CaAlSi(N 1-x F x ): Eu 2+ .

Nitride-based red-emitting phosphors in rgb (red-green-blue) lighting systems

Embodiments of the present invention are directed to nitride-based, red-emitting phosphors in red, green, and blue (RGB) lighting systems, which in turn may be used in backlighting displays and warm white-light applications. In particular embodiments, the red-emitting phosphor is based on CaAlSiN 3 type compounds activated with divalent europium. In one embodiment, the nitride-based, red emitting compound contains a solid solution of calcium and strontium compounds (Ca,Sr)AlSiN 3 :Eu 2+ , wherein the impurity oxygen content is less than about 2 percent by weight. In another embodiment, the (Ca,Sr)AlSiN 3 :Eu 2+ compounds further contains a halogen in an amount ranging from about zero to about 2 atomic percent, where the halogen may be fluorine (F), chlorine (Cl), or any combination thereof. In one embodiment at least half of the halogen is distributed on 2-fold coordinated nitrogen (N2) sites relative to 3-fold coordinated nitrogen (N3) sites.

Complex oxynitride phosphor, light-emitting device using same, image display, illuminating device, phosphor-containing composition and complex oxynitride

To provide a green phosphor with high conversion efficiency of blue of near-ultraviolet light and excellent color purity, a multinary oxynitride phosphor represented by the general formula [I] is proposed. M1 x Ba y M2 z L u O v N w   [I] In the formula [I], M1 represents Cr, Mn, Fe, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb, M2 represents Sr, Ca, Mg and Zn, L represents metal elements belonging to the fourth group or the fourteenth group of the periodic table, and x, y, z, u, v and w are the numeric values in the following ranges: 0.00001≦x≦3 0≦y≦2.99999 2.6≦x+y+z≦3 0<u≦11 6<v≦25 0<w≦17.

Group of phosphor particles, and light-emitting device using the same

Disclosed is a group of green-light-emitting bivalent europium-activated oxynitride phosphor particles each of which is a β-type SiAlON substantially represented by the general formula: EuaSibAlcOdNe [wherein a, b, c, d and e are numbers that meet the requirements represented by the following formulae: 0.005≤a≤0.4, b+c=12 and d+e=16], wherein the phosphor particles having a value produced by dividing the longer particle diameter by the shorter particle diameter of greater than 1.0 and not greater than 3.0 (1) constitute 60% or more of the whole phosphor particles. Also disclosed is a high-efficiency and stable light-emitting device utilizing a β-type SiAlON, which utilizes the group of the phosphor particles in a wavelength-converting unit thereof. Further disclosed is a group of phosphor particles for use in the device.

Illuminating apparatus

An illuminating device has a solid light-emitting element module (10) and a phosphor module (20) joined to the solid light-emitting element module (10). The solid light-emitting element module (10) has a plurality of the solid light-emitting elements. The phosphor module (20) has a plurality of phosphor-containing parts (22) corresponding to the individual solid light-emitting elements (12). Thus, a light-emitting part is provided, which has more than one kind of luminescence sources having the solid light-emitting element (12) and the phosphor-containing part (22). An illumination intensity of a composite light is 150 lux or more at a distance of 30 cm perpendicularly from the light-emitting surface of the light-emitting part.

Led-based device with wide color gamut

The invention provides a lighting unit comprising a source of blue light, a source of green light, a first source of red light comprising a first red luminescent material, configured to provide red light with a broad band spectral light distribution, and a second source of red light comprising a second red luminescent material, configured to provide red light with a spectral light distribution comprising one or more red emission lines. Especially, the first red luminescent material comprises (Mg,Ca,Sr)AlSiN 3 :Eu and/or (Ba,Sr,Ca) 2 Si 5 - x Al x O x N 8-x :Eu, and the second red luminescent material comprises K 2 SiF 6 :Mn.

Phosphor, method for preparing and using the same, light emitting device package, surface light source apparatus and lighting apparatus using red phosphor

Disclosed are a phosphor, a method for preparing and using the same, a light emitting device package, a surface light source apparatus, a lighting apparatus using the phosphor, and a display apparatus. The phosphor includes an inorganic compound represented by an empirical formula (Sr, M) 2 SiO 4-x Ny:Eu, where M is a metallic element, 0<x<4, and y=2x/3.

Green-emitting, garnet-based phosphors in general and backlighting applications

Disclosed herein are green-emitting, garnet-based phosphors having the formula (Lu 1-a-b-c Y a Tb b A c ) 3 (Al 1-d B d ) 5 (O 1-e C e ) 12 :Ce,Eu, where A is selected from the group consisting of Mg, Sr, Ca, and Ba; B is selected from the group consisting of Ga and In; C is selected from the group consisting of F, Cl, and Br; and 0≦a≦1; 0≦b≦1; 0<c≦0.5; 0≦d≦1; and 0<e≦0.2. These phosphors are distinguished from anything in the art by nature of their inclusion of both an alkaline earth and a halogen. Their peak emission wavelength may lie between about 500 nm and 540 nm; in one embodiment, the phosphor (Lu,Y,A) 3 Al 5 (O,F,Cl) 12 :Eu 2+ has an emission at 540 nm. The FWHM of the emission peak lies between 80 nm and 150 nm. The present green garnet phosphors may be combined with a red-emitting, nitride-based phosphor such as CaAlSiN 3 to produce white light.

Phosphor, method for producing same, and use of same

LED 등의 발광 소자의 광을 흡수하여 적색을 발광하는 CaAlSiN 3 결정상과 동일한 결정 구조를 모체 결정으로 하여 종래보다 발광 효율이 뛰어난 형광체 및 그 형광체 사용에 의해 고휘도이고 장수명의 발광 장치를 제공한다. 일반식 Ca x (Si,Al) 2 (N,O) 3+y (단, O.75≤x≤O.92, -O.2≤y≤O.2)로 나타나고, Ca 원소의 일부가 Eu 원소로 치환되어 있는 분말상 형광체로서, Si/Al비(몰비)가 0.9 이상 1.55 이하, Eu 함유율이 0.01at% 이상 0.3at% 이하, 입내 고용 산소량이 0.4질량% 이상 0.7질량% 이하인 형광체. A fluorescent material having the same crystal structure as the CaAlSiN 3 crystal phase which absorbs light of a light emitting element such as an LED and emits red light and has a luminescent efficiency higher than that of the prior art, and a light emitting device of high brightness and long life by using the phosphor. Appears by the general formula Ca x (Si, Al) 2 (N, O) 3 + y ( However, O.75≤x≤O.92, -O.2≤y≤O.2), a part of the elements Ca Eu phosphor having a Si / Al ratio (molar ratio) of 0.9 or more to 1.55 or less, a Eu content of 0.01 at% or more and 0.3 at% or less, and a phosphorus content in the mouth of 0.4 to 0.7% by mass.

Method for producing β-sialon

光转换材料

本发明涉及光转换材料，其包含具有半导体纳米粒子(量子材料)的发光材料，其中半导体纳米粒子位于发光材料的表面上并且来自半导体纳米粒子的发射在发光材料的发射区域中。此外，本发明涉及制备光转换材料的方法及其在光源中的用途。此外，本发明涉及包含根据本发明的光转换材料的光转换混合物、光源、照明元件及其制造方法。

Phosphor and light emitting device package including the same

실시예는 황색 파장 영역의 광을 방출하는 실리케이트(silicate) 계열의 제1 형광체; 녹색 파장 영역의 광을 방출하는 나이트라이드(nitride) 계열의 제2 형광체; 및 적색 파장 영역의 광을 방출하는 나이트라이트 계열의 제3 형광체를 포함하고, 상기 제1 형광체 내지 제3 형광체가 방출하는 광의 반치폭은 110 나노미터 이상인 형광체를 제공한다. Examples include a silicate-based first phosphor that emits light in the yellow wavelength range; A nitride-based second phosphor that emits light in the green wavelength region; And a third phosphor of a night light series emitting light in a red wavelength region, and a half width of light emitted by the first to third phosphors is 110 nanometers or more.

Red phosphor and light emitting device comprising the red phosphor

본 발명의 일실시예에 따른 적색형광체는 A z (Sr, M) 2 (Si, Al)O 4-x N y 　(0<x<3, y=2x/3, 0.001<z<0.1)의 조성식으로 표시되고, 상기 A는 리튬(Li), 칼륨(K) 및 나트륨(Na)으로 이루어진 군에서 선택된 적어도 1종의 원소이며, 상기 M은 바륨(Ba), 마그네슘(Mg) 및 칼슘(Ca)으로 이루어진 군으로부터 선택된 적어도 1종의 원소인 화합물을 포함하며, 6.9㎛ ≤ D50 ≤ 13.9㎛에 해당하는 입도 분포를 갖는 것을 특징으로 하는 적색형광체이다. The red phosphor according to an embodiment of the present invention may be a red phosphor of A z (Sr, M) 2 (Si, Al) O 4 -xN y (0 <x <3, y = 2x / 3, 0.001 < Wherein A is at least one element selected from the group consisting of lithium (Li), potassium (K) and sodium (Na), and M is at least one element selected from the group consisting of barium (Ba), magnesium (Mg) ), And has a particle size distribution corresponding to 6.9 탆? D50? 13.9 占 퐉.

Group of phosphor particles, light-emitting device using same, and liquid crystal television receiver

일반식 (I) : Eu a Si b Al c O d N e (식 중 0.005 ≤ a ≤ 0.4, b + c = 12, d + e = 16을 만족하는 수이다.)로 표시되는 β형 SiAlON인, 2가의 유로퓸 활성 산 질화물 녹색계 발광 형광체 입자(1)의 입자 군, 상기 형광체 입자(1) 입자 군을 파장 변환부(13)에 사용한 발광 장치(11), 및 상기 발광 장치(11)를 사용한 액정 텔레비젼 수상기에 의해, β형 SiAlON을 사용한 고효율로 안정된 발광 장치 및 그를 위한 형광체 입자군이 제공된다. Is a β-type SiAlON represented by the general formula (I): Eu a Si b Al c O d N e (wherein 0.005 ≦ a ≦ 0.4, b + c = 12, and d + e = 16) , A particle group of the divalent europium active oxynitride green luminescent phosphor particles (1), a light emitting device (11) using the phosphor particles (1) particle group for the wavelength conversion section (13), and the light emitting device (11) The liquid crystal television receiver used provides a light emitting device that is stable with high efficiency using β-type SiAlON and a phosphor particle group therefor.

β-sialon fluorescent material, Method of producing thereof, Light-emitting member and Light-emitting device

β형 사이알론을 호스트 결정으로 하고, 발광 중심으로서 Eu를 함유하는 β형 사이알론 형광체에 있어서, Eu의 화학 상태를 Eu 2 + , Eu 3 + 및 이들의 중간적인 상태(Eu m 이라고 표기함)의 3종류로 분류하였을 때에 이들의 존재 비율이 0.1<Eu m /(Eu 2+ +Eu 3+ +Eu m )<0.4이고 Eu 2 + /(Eu 2 + +Eu 3 + )>0.7의 관계를 만족하는 β형 사이알론 형광체로 한다. In a β-sialon phosphor having β-sialon as a host crystal and containing Eu as a luminescence center, the chemical states of Eu are Eu 2+ , Eu 3+ and intermediate states thereof ( referred to as Eu m ). When classified into three types of _ _ _ _ A satisfactory β-sialon phosphor is used.

New nitridoalumosilicate phosphor for solid state lighting

FIELD: lighting.SUBSTANCE: invention can be used in lighting devices and information display devices. Lighting element 100 comprises radiation source 10 and luminescent material 20, which converts at least part of radiation 11 from source 10 into radiation 51. Radiation source 10 comprises a light emitting diode. Luminescent material 20 contains a luminescent substance 40 having the formula MZABCDENO:ES,RE(I), where is M are selected from a group consisting of Ca, Sr and Ba; Z are selected from a group consisting of Na, K and Rb; A are selected from a group consisting of Li and Cu; B are selected from a group consisting of Mg, Mn, Zn and Cd; C are selected from a group consisting of B, Al and Ga; D are selected from a group consisting of tetravalent Si, Ge, Ti and Hf; E are selected from a group consisting of pentavalent P, V, Nb and Ta; ES are selected from a group consisting of divalent Eu, Sm and Yb; RE are selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm; 0≤x≤0.2; 0≤y≤0.2; 0<x+y≤0.4; 0≤z<1; x+y+z<1; 0≤n≤0.75; 0≤a≤2; 0≤b≤2; 0≤c≤4; 0≤d≤4; e=0; a+b=2; c+d+e=4; a+2b+3c+4d+5e+y-z=16-n. Phosphor particles may have a coating from a group consisting of AlPO, AlOand SiO. Luminescent material 20 may additionally include phosphors selected from BaSrMgGaN:Eu, BaMgGaN:Eu, SrMgSiN:Eu, SrMgAlN:Eu, SrMgGaN:Eu, BaMgSiN:Eu, CaLiAlN:Eu, SrLiAlN:Eu, CaLiMgAlN:Eu and SrLiMgAlN:Eu.EFFECT: high efficiency of lighting devices.16 cl, 9 dwg, 3 tbl, 8 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 683 077 C2 (51) МПК F21S 2/00 (2006.01) F21Y 115/10 (2016.01) C09K 11/08 (2006.01) C09K 11/77 (2006.01) G02F 1/13357 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК F21S 2/00 (2018.05); F21Y 2115/10 (2018.05); C09K 11/08 (2018.05); C09K 11/77 (2018.05); G02F 1/133603 (2018.05) (21)(22) Заявка: 2016116028, 23.09.2014 23.09.2014 Дата регистрации: 26.03.2019 26.09.2013 EP 13186161.9 (43) ...

Phosphor and light emitting device

下記一般式（１）［化１］一般式：（Ｓｒ１−ｘ，Ｅｕx）αＳｉβＡｌγＯδＮω（１）（式中、ｘは０＜ｘ＜１、αは０＜α≦４であり、β、γ、δおよびωはαが３のときに換算した数値が、９＜β≦１５、１≦γ≦５、０．５≦δ≦３、１０≦ω≦２５を満足する数である）で表されるユーロピウム付活サイアロン結晶体からなり、紫外光〜青色光で励起されることにより緑色発光する蛍光体であり、炭素を１ｐｐｍ以上５０００ｐｐｍ以下の割合で含む蛍光体。 The following general formula (1) [chemical formula 1] general formula: (Sr1-x, Eux) αSiβAlγOδNω (1) (wherein x is 0 <x <1, α is 0 <α ≦ 4, β, γ, δ and ω are numerical values converted when α is 3, and satisfying 9 <β ≦ 15, 1 ≦ γ ≦ 5, 0.5 ≦ δ ≦ 3, and 10 ≦ ω ≦ 25) A phosphor that is made of europium activated sialon crystal and emits green light when excited by ultraviolet light to blue light and contains carbon at a ratio of 1 ppm to 5000 ppm.

一种氮氧化合物发光材料、其制备方法及其应用

本发明涉及“一种氮氧化合物发光材料、其制备方法及其应用”，涉及半导体领域。一种氮氧化合物发光材料，其化学式为：A x B y O z N 2/3x+4/3y-2/3z :R，其中，A为下列物质中的一种或几种：Be，Mg，Ca，Sr，Ba，Zn，所述B为Si，Ge，Zr，Ti，B，Al，Ga，In，Li，Na中的一种或几种且至少含有Si。该发光材料化学性质稳定、发光性能优异，能被紫外或蓝光LED激发的白光LED用氮氧化物的蓝绿色到红色发光材料；其激发波长在300-500nm之间，发光波长在470-700nm之间，该类发光材料配合蓝色LED或紫外或近紫外LED能制成白光LED照明或显示光源。

半导体发光装置、半导体发光系统和照明设备

本发明的课题在于提供一种发出相关色温为1600K以上且小于2400K、并且Ra高的光的半导体发光装置以及具备该半导体发光装置的半导体发光系统。该课题通过具有以下构成的半导体发光装置而解决。半导体发光装置(1)具备作为半导体发光元件的LED芯片(10)和将LED芯片(10)作为激发源而发光的荧光体(20)，其发出相关色温为1600K以上且小于2400K的光。荧光体(20)至少包含绿色荧光体和红色荧光体。在由该半导体发光装置(1)发出的光的光谱中，由LED芯片(10)发出的光的峰强度的值为小于荧光体(20)发出的光的最大峰强度的60%的值。

형광체, 그 제조 방법, 발광 장치 및 화상 표시 장치

470 ㎚ 이하의 LED 와 조합한 경우라도 발광 강도가 높고, 화학적 및 열적으로 안정적인 형광체를 제공하는 것. 본 발명의 형광체는, Li 원소와 A 원소와 D 원소와 E 원소와 X 원소 (A 는, Mg, Ca, Sr, Ba, Sc, Y, La 에서 선택되는 적어도 1 종의 원소, D 는, Si, Ge, Sn, Ti, Zr, Hf 에서 선택되는 적어도 1 종의 원소, E 는, B, Al, Ga, In 에서 선택되는 적어도 1 종의 원소, X 는, O, N, F 에서 선택되는 적어도 1 종의 원소) 를 함유하고, Li 1 Ba 2 Al 1 Si 7 N 12 로 나타내는 결정, (Li,A) 3 (D,E) 8 X 12 로 나타내는 결정, Li 1 Ba 2 Al 1 Si 7 N 12 로 나타내는 결정과 동일한 결정 구조를 갖는 무기 결정, 또는 이들 고용체 결정에, M 원소 (M 은, Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Yb 에서 선택되는 적어도 1 종의 원소) 가 고용된 무기 화합물을 함유한다.

PROCESS FOR PRODUCING β­SIALON PHOSPHOR

β형 사이알론에 유로퓸 이온을 고용한 β형 사이알론 형광체의 제조 방법이며, β형 사이알론 형광체의 원료를 혼합하는 혼합 공정과, 혼합 공정 후의 원료를 소성하여 β형 사이알론 형광체를 형성하는 소성 공정과, 소성 공정 후의 β형 사이알론 형광체에 HIP 처리를 실시하는 HIP 처리 공정과, HIP 처리 공정 후의 β형사이알론 형광체에 어닐링 처리를 실시하는 어닐링 처리 공정과, 어닐링 처리 공정 후의 β형 사이알론 형광체에 산처리를 실시하는 산처리 공정을 포함하는 β형 사이알론 형광체의 제조 방법을 제공한다. 이 β형 사이알론 형광체의 제조 방법에 의하면, 발광 강도가 뛰어난 β형 사이알론 형광체를 얻을 수 있다. A method for producing a? -type sialon phosphor having? -type sialon dissolved therein with europium ions, comprising the steps of: mixing a raw material of a? -sialon phosphor; firing a raw material after the mixing step to form a? -sialon phosphor Type sialon phosphors after the sintering step, a HIP treatment step in which the S-type sialon phosphors after the sintering step are subjected to HIP treatment, an annealing treatment step in which an annealing treatment is applied to the? -Sialon phosphors after the HIP treatment step, And a step of performing an acid treatment on the? -Type sialon phosphor. According to this method for producing a? -Type sialon phosphor, a? -Type sialon phosphor excellent in light emission intensity can be obtained.

包括黄绿发光材料的照明系统

一种照明系统，包括辐射源和发光材料，该发光材料包含能吸收由辐射源发射出的一部分光并发射波长不同于所吸收光的光的荧光体；其中，所述荧光体是通式为AE 1-y-z Ln y Si 3-x Al x-a B a O 1+x-y N 4-x+y :Eu z 的铕活性氧氮化铝硅酸盐，其中，AE为选自Sr，Ca，Ba，Mg和Zn组成的组的碱土金属；Ln为选自La，Ce，Pr，Nd，Sm，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu和Y组成的组的镧系金属；B是选自硼，镓和钪组成的组的三价金属，并且0≤a＜2，0≤x＜2，0≤y≤1，0.001＜z≤0.1，该照明系统提供了具有高效率的白色或彩色照明。本发明还涉及发光材料，包括能吸收由辐射源发射出的一部分光并发射波长不同于所吸收光的光的荧光体，其中，所述荧光体是通式为AE 1-y-z Ln y Si 3-x Al x-a B a O 1+x-y N 4-x+y :Eu z 的铕活性氧氮化铝硅酸盐，其中，AE为选自Sr，Ca，Ba，Mg和Zn组成的组的碱土金属；Ln为选自La，Ce，Pr，Nd，Sm，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu和Y组成的组的镧系金属；B是选自硼、镓和钪组成的组的三价金属，并且0≤a＜2，0≤x＜2，0≤y≤1，0.001＜z≤0.1。

β형 사이알론 형광체 및 발광 장치

X선 광전자 분광 측정에 의해 얻어지는, 형광체의 표면으로부터 8nm의 깊이에 있어서의 알루미늄 원소의 비율을 P 8 [at％], 형광체의 표면으로부터 80nm의 깊이에 있어서의 알루미늄 원소의 비율을 P 80 [at％]으로 했을 때, P 8 /P 80 ≤0.9인, 유로퓸이 고용된 β형 사이알론 형광체. 또한, 이 β형 사이알론 형광체를 포함하는 발광 장치.

β―TYPE SIALON, PROCESS FOR PRODUCTION OF β―TYPE SIALON, AND LIGHT-EMITTING DEVICE

산화 알루미늄 또는 산화 규소의 적어도 하나와, 질화 규소와, 질화 알루미늄과, 유로퓸 화합물을 혼합하는 혼합 공정과, 혼합 공정 후의 혼합물을 1950℃를 초과하고 2200℃ 이하, 10 시간 이상의 조건으로 소성하는 소성 공정과, 소성 공정 후에 1300℃ 이상 1600℃ 이하, 분압 10 kPa 이하의 질소 이외의 불활성 가스의 분위기 중에서 열처리하는 열처리 공정을 가지는 β형 사이알론의 제조 방법이다. A mixing step of mixing at least one of aluminum oxide or silicon oxide with silicon nitride, aluminum nitride and a europium compound, and a sintering step of sintering the mixture after the mixing step at a temperature of 1950 占 폚 to 2200 占 폚 for 10 hours or longer And a heat treatment step of performing heat treatment in an atmosphere of an inert gas other than nitrogen having a partial pressure of 10 kPa or lower at 1300 DEG C or higher and 1600 DEG C or lower after the firing process.