21-03-2013 дата публикации
Номер: US20130072411A1
A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures. 156.-. (canceled)57. A cleaning formulation comprising (i) a fluoride source , (ii) at least one organic amine , (iii) a nitrogen-containing carboxylic acid or an imine , (iv) water , and optionally at least one metal chelating agent , wherein the nitrogen-containing carboxylic acid or imine is selected from the group consisting of:iminodiacetic acid (IDA),glycine,1,1,3,3-tetramethylguanidine (TMG),{'sub': 3', '2', '2', '2', '3', '2, 'CHC(═NCHCHOH)CHC(O)N(CH),'}{'sub': 3', '2', '2', '2', '2', '2', '3', '2, 'CHC(═NCHCHOCHCHOH)CHC(O)N(CH),'}{'sub': 3', '2', '3, 'CHC(═NH)CHC(O)CH,'}{'sub': 3', '2', '2', '3', '2', '2, '(CHCH)NC(═NH)N(CHCH),'}{'sub': 2', '3', '2, 'HOOCCHN(CH), and'}{'sub': 2', '3', '2, 'HOOCCHN(CH)CHCOOH.'}58. The cleaning formulation of claim 57 , wherein the wafer cleaning composition has a pH greater than 7.59. The cleaning formulation of claim 57 , wherein the amount of nitrogen-containing carboxylic acid or imine is 0.1-40 weight percent claim 57 , based on the total weight of the composition.60. The cleaning formulation of claim 57 , wherein the fluoride source comprises a fluoride species selected from the group consisting of:any combination of ammonia gas or ammonium hydroxide and hydrogen fluoride gas or hydrofluoric acid,ammonium bifluoride,ammonium fluoride,triethanolammonium fluoride (TEAF),diglycolammonium fluoride (DGAF),tetramethylammonium fluoride (TMAF),methyldiethanolammonium fluoride (MDEAF), andtriethylamine tris(hydrogen fluoride) (TREAT-HF).61. The cleaning formulation of claim ...
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