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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 3227. Отображено 100.
21-06-2012 дата публикации

Bulk Nanocomposite Magnets and Methods of Making Bulk Nanocomposite Magnets

Номер: US20120153212A1
Автор: J. Ping Liu
Принадлежит: University of Texas at Arlington

The present invention relates to bulk magnetic nanocomposites and methods of making bulk magnetic nanocomposites.

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23-08-2012 дата публикации

Tube-shaped sputtering target

Номер: US20120213917A1

A tube-shaped sputtering target is provided having a carrier tube and an indium-based sputtering material arranged on the carrier tube. The sputtering material has a microstructure having a mean grain size of less than 1 mm, measured as the mean diameter of the grains on the sputtering-roughened surface of the sputtering material.

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18-10-2012 дата публикации

Anode Active Material For Lithium Secondary Battery And Lithium Secondary Battery Having The Same

Номер: US20120264015A1
Принадлежит: LG Chem Ltd

An anode active material for a lithium secondary battery and a lithium secondary battery having the same are disclosed. The anode active material for a lithium secondary battery includes a silicon alloy consisting of silicon and at least two kinds of metals other than silicon, each having the heat of mixing with the silicon of −23 kJ/mol or less. The anode active material for a lithium secondary battery has a high capacity, and thus, is useful in fabricating a high-capacity lithium secondary battery. Also, the anode active material for a lithium secondary battery has a small crystal size of a silicon phase and consequently a small change in volume during charging/discharging, and thus, ensures excellent cycle life characteristics in applications to batteries.

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21-02-2013 дата публикации

Method for manufacturing semiconductor device and semiconductor device

Номер: US20130043594A1
Принадлежит: Toshiba Corp

According to one embodiment, between the mounting substrate and the semiconductor chip, there is a joint support layer including a metal or its alloy selected from the group of Cu, Al, Ag, Ni, Cr, Zr and Ti and a melt layer laminated across the joint support layer, and formed of a metal selected from the group of Sn, Zn and In or of an alloy of at least two metals selected from the same metals. The process of joining the mounting substrate and the semiconductor chip includes intervening a joining layer which is formed, at least for its outermost layer, by the melt layer, maintaining the temperature to be higher than the melting point of the melt layer, then forming an alloy layer which has a higher melting point than the melt layer by liquid phase diffusion.

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22-08-2013 дата публикации

Metal Wire Rod Made of Iridium-Containing Alloy

Номер: US20130213107A1
Принадлежит: TANAKA KIKINZOKU KOGYO K.K.

The present invention is a metallic wire rod comprising iridium or an iridium-containing alloy and, the wire rod has in the cross section thereof biaxial crystal orientation of 50% or more of abundance proportion of textures in which crystallographic orientation has preferred orientation to <100> direction. In the present invention, crystal orientation in the outer periphery from semicircle of the cross section which is the periphery of the wire rod is important, and in this zone, abundance proportion of textures in which crystallographic orientation has preferred orientation to <100> direction is preferably not less than 50%. 1. A metallic wire rod comprising iridium or an iridium-containing alloy , wherein the wire rod has in a cross section thereof a biaxial crystal orientation of 50% or more of abundance proportion of textures in which crystallographic orientation has an orientation to <100> direction.2. The metallic wire rod according to claim 1 , wherein the wire rod has in the outer periphery from semicircle of the cross section 50% or more of the abundance proportion of textures in which crystallographic orientation has an orientation to <100> direction.3. The metallic wire rod according to claim 1 , wherein the iridium-containing alloy is an alloy containing rhodium claim 1 , platinum claim 1 , and nickel.4. A method of manufacturing the metallic wire rod claim 1 , the wire rod defined in claim 1 , comprising:a first step in which an ingot of iridium or an iridium-containing alloy is made into a rod-shape article by biaxial pressurization while intermediate heat treatment is performed, and a second step in which the rod-shape article undergoes wire drawing to be a wire rod, wherein hardness of the ingot in the first step is maintained in not more than 550 Hv, and temperatures of the intermediate heat treatment are set to be not more than the recrystallization temperature of the iridium or an iridium-containing alloy.5. The method of manufacturing the ...

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22-08-2013 дата публикации

Alloy material for high temperature having excellent oxidation resistant properties and method for producing the same

Номер: US20130216846A1

An Ir-based alloy material or Ru-based alloy material containing in Ir or Ru at least one member of Al, Sc, Ti, V, Cr, Mn, Y, Zr, Nb, Mo, Tc, Hf, Ta, W, and Re in such an amount that a precipitation phase is not formed, wherein the Ir-based alloy material or Ru-based alloy material has a surface uniformly covered with an IrAl intermetallic compound film or a RuAl intermetallic compound film.

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19-09-2013 дата публикации

Production Method for High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Composed of High-Purity Lanthanum, and Metal Gate Film Containing High-Purity Lanthanum as Main Component

Номер: US20130241010A1
Принадлежит: JX NIPPON MINING & METALS CORPORATION

A method for producing high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, wherein lanthanum having a purity of 4N or more is produced by reducing, with distilled calcium, a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, and the obtained lanthanum is subjected to electron beam melting to remove volatile substances. The method for producing high-purity lanthanum, in which Al, Fe, and Cu are respectively contained in the amount of 10 wtppm or less. The method for producing high-purity lanthanum, in which total content of gas components is 1000 wtppm or less. The present invention aims to provide a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target composed of high-purity lanthanum, and a thin film for metal gate that contains high-purity lanthanum as a main component. 1. A method for producing high-purity lanthanum , comprising the steps of reducing , with distilled calcium , a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components , and removing volatile substances by subjecting the obtained lanthanum to electron beam melting so that the purity excluding rare earth elements other than lanthanum and gas components is 4N5 or more , the content of Al and Fe is respectively 5 wtppm or less , the content of Cu is 1 wtppm or less , and the total content of gas components is 1000 wtppm or less.25.-. (canceled)6. The method for producing high-purity lanthanum according to claim 1 , wherein the high-purity lanthanum contains C in the amount of 200 wtppm or less.7. (canceled)8. The method for producing high-purity lanthanum according to claim 6 , wherein the high-purity lanthanum contains rare earth elements other than lanthanum in the amount of 10 wtppm or less.9. A high-purity lanthanum ...

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05-12-2013 дата публикации

Cu-Ga Target, Method of Producing Same, Light-absorbing Layer Formed from Cu-Ga Based Alloy Film, and CIGS System Solar Cell Having the Light-absorbing Layer

Номер: US20130319527A1
Принадлежит: JX NIPPON MINING & METALS CORPORATION

A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cmor more applied to the sintered mixed raw material powder. Provided are a sputtering target having very low compositional deviation and high density; a method of producing the target; a light-absorbing layer having a Cu—Ga based alloy film; and a CIGS solar cell including the light-absorbing layer. 1. A Cu—Ga alloy sintered compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance , wherein the relative density is 80% or higher , and no Ga phase is present.2. The Cu—Ga alloy sintered compact sputtering target according to claim 1 , wherein the target is produced by hot-pressing a pulverized raw material mixture prepared by melting and cooling Cu and Ga raw materials.3. A method of producing a Cu—Ga based alloy sintered compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance claim 1 , comprising the steps of:producing a Cu—Ga alloy raw material powder by melting, cooling and pulverizing Cu and Ga raw materials; and{'sup': '2', 'hot-pressing the raw material powder at a retention temperature being between the melting point of the mixed raw material powder ...

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02-01-2014 дата публикации

Negative electrode active material for electric device, negative electrode for electric device and electric device

Номер: US20140001401A1
Принадлежит: Nissan Motor Co Ltd

A negative electrode active material for an electric device includes an alloy containing silicon in a range from 27% by mass to 100% by mass exclusive, aluminum in a range from 0% by mass to 73% by mass exclusive, niobium in a range from 0% by mass to 58% by mass exclusive, and inevitable impurities as a residue. The negative electrode active material can be obtained with a multi DC magnetron sputtering apparatus by use of, for example, silicon, aluminum and niobium as targets. An electric device using the negative electrode active material can achieve a high cycle property while keeping a high discharge property.

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27-03-2014 дата публикации

Negative electrode active material for electric device, negative electrode for electric device and electric device

Номер: US20140086788A1
Принадлежит: Nissan Motor Co Ltd

A negative electrode active material for an electric device includes an alloy containing Si in a range from greater than or equal to 17% by mass to less than 90% by mass, Ti in a range from 10% by mass to 83% by mass exclusive, Ge in a range from 0% by mass to 73% by mass exclusive, and inevitable impurities as a residue. The negative electrode active material can be obtained with a multi DC magnetron sputtering apparatus by use of, for example, Si, Ti and Ge as targets. An electric device employing the negative electrode active material can achieve long cycle life, and ensure a high capacity and improved cycle durability.

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08-01-2015 дата публикации

ALLOY POWDER FOR ELECTRODE, NEGATIVE ELECTRODE FOR ALKALINE STORAGE BATTERY USING THE SAME, AND ALKALINE STORAGE BATTERY

Номер: US20150010812A1
Принадлежит: Panasonic Corporation

Provided is an alloy powder for an electrode which enables an alkaline storage battery to have both excellent discharge characteristics and excellent life characteristics. The alloy powder includes a hydrogen storage alloy including an element L, Mg, Ni, Al, and an element M. The element L is at least one selected from the group consisting of group 3 elements and group 4 elements of the periodic table (excluding Y). The element Mis at least two selected from the group consisting of Ge, Y, and Sn. A molar proportion x of Mg in a total of the element L and Mg is 0.008≦x≦0.54. A molar proportion y of Ni, a molar proportion α of Al, and a molar proportion ρ of the element M, per the foregoing total is 1.6≦y≦4, 0.008≦α≦0.32, and 0.01≦ρ≦0.12, respectively. 19-. (canceled)10. An alloy powder for an electrode comprising a hydrogen storage alloy ,{'sup': a', 'b, 'the hydrogen storage alloy including an element L, Mg, Ni, Al, an element M, and an element M,'}the element L being at least one selected from the group consisting of group 3 elements and group 4 elements of the periodic table, excluding Y,{'sup': 'a', 'the element Mbeing at least two selected from the group consisting of Ge, Y, and Sn,'}{'sup': 'b', 'the element Mis at least one selected from the group consisting of V, Nb, Ta, Cr, Mo, W, Mn, Fe, Cu, Ag, Zn, B, Ga, In, Si, and P,'}a molar proportion x of Mg in a total of the element L and Mg being 0.008≦x≦0.54,a molar proportion y of Ni per the total of the element L and Mg being 1.6≦y≦4,a molar proportion α of Al per the total of the element L and Mg being 0.008≦α≦0.32,{'sup': 'a', 'a molar proportion β of the element Mper the total of the element L and Mg being 0.01≦ρ≦0.12, and'}{'sup': 'b', 'a molar proportion z of the element Mper the total of the element and Mg is 0.01≦z≦0.8.'}11. The alloy powder for an electrode in accordance with claim 10 ,{'sup': 'c', 'wherein the hydrogen storage alloy further includes an element M,'}{'sup': 'c', 'the element Mis at least ...

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11-01-2018 дата публикации

METHOD FOR PRODUCING RFeB SYSTEM SINTERED MAGNET

Номер: US20180012701A1
Принадлежит: Intermetallics Co Ltd

A method for producing an RFeB system sintered magnet according to the present invention includes: a process (S 1 ) of preparing a lump of HDDR-treated raw material alloy that contains a polycrystalline substance including crystal grains having an average grain size of 1 μm or less in terms of an equivalent circle diameter calculated from an electron micrograph image, by an HDDR treatment including steps of heating a lump of RFeB system alloy containing 26.5 to 29.5% by weight of the rare-earth element R, in a hydrogen atmosphere at a temperature between 700 and 1,000° C., and changing the atmosphere to vacuum while maintaining the temperature within a range from 750 to 900° C.; a process (S 2 ) of preparing a lump of raw material alloy having a high rare-earth content by heating the lump of HDDR-treated raw material alloy at a temperature between 700 and 950° C. in a state where the HDDR-treated raw material alloy is in contact with a contact substance including a second alloy that contains the rare-earth element R at a higher content ratio than a content ratio of the rare-earth element R in the RFeB system alloy; a process (S 3 ) of preparing raw material alloy powder by fine pulverization of the lump of raw material alloy having a high rare-earth content into powder having an average particle size of 1 μm or less; an orienting process (S 4 ) including steps of placing the raw material alloy powder in a mold, and applying a magnetic field to the raw material alloy powder without conducting compression molding; and a sintering process (S 5 ) including a step of heating the oriented raw material alloy powder at a temperature between 850 and 1,050° C.

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03-02-2022 дата публикации

METHOD OF MANUFACTURING ALUMINUM ALLOY ARTICLES

Номер: US20220032374A1
Принадлежит:

A method for making an article is disclosed. The method involves inputting a digital model of an article into an additive manufacturing apparatus comprising an energy source. The additive manufacturing apparatus applies energy from the energy source to successively applied incremental quantities of a powder to fuse the powder to form the article corresponding to the digital model. The powder includes an aluminum alloy having 2.00-10.00 wt. % cerium, 0.50-2.50 wt. % titanium, 0-3.00 wt. % nickel, 0-0.75 wt. % nitrogen, 0-0.05 wt. % other alloying elements, and the balance of aluminum, based on the total weight of the aluminum alloy. 1. An aluminum alloy comprising greater than 2.00 and less than 4.00 wt. % cerium , 0.50-2.50 wt. % titanium , 0-3.00 wt. % nickel , 0-0.75 wt. % nitrogen , 0-0.05 wt. % other alloying elements , and the balance of aluminum , based on the total weight of the aluminum alloy aluminum alloy.2. The aluminum alloy of claim 1 , wherein the aluminum alloy comprises 0.50-1.50 wt. % titanium claim 1 , based on the total weight of the aluminum alloy.3. The aluminum alloy of claim 1 , wherein the aluminum alloy comprises 1.50-2.50 wt. % titanium claim 1 , based on the total weight of the aluminum alloy.4. The aluminum alloy of claim 1 , wherein the aluminum alloy comprises nickel in an amount up to 3.00 wt. % claim 1 , based on the total weight of the aluminum alloy.5. The aluminum alloy of claim 1 , wherein the aluminum alloy comprises 1.00-3.00 wt. % nickel claim 1 , based on the total weight of the aluminum alloy. The present application is a division of U.S. patent application Ser. No. 15/607,097, filed May 26, 2017, the entire contents of which are incorporated herein by reference.This disclosure relates to additive manufacturing of aluminum articles.Additive manufacturing technologies have been used and proposed for use for fabricating various types of articles from various types of materials. Broadly viewed, additive manufacturing can include ...

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03-02-2022 дата публикации

ALUMINUM ALLOY ARTICLES

Номер: US20220032375A1
Принадлежит:

An aluminum alloy comprising greater than 2.00 and less than 4.00 wt. % cerium, 0.25-3.00 wt. % silicon, 0.25-0.75 wt. % magnesium, 0-0.75 wt. % iron, 0-0.05 wt. % other alloying elements, and the balance of aluminum, based on the total weight of the aluminum alloy aluminum alloy. 1. An aluminum alloy comprising greater than 2.00 and less than 4.00 wt. % cerium, 0.25-3.00 wt. % silicon, 0.25-0.75 wt. % magnesium, 0-0.75 wt. % iron, 0-0.05 wt. % other alloying elements, and the balance of aluminum, based on the total weight of the aluminum alloy aluminum alloy The present application is a division of U.S. patent application Ser. No. 15/607,086, filed May 26, 2017, the entire contents of which are incorporated herein by reference.This disclosure relates to additive manufacturing of aluminum articles.Additive manufacturing technologies have been used and proposed for use for fabricating various types of articles from various types of materials. Broadly viewed, additive manufacturing can include any manufacturing process that incrementally adds material to an assembly during fabrication, and has been around in one form or another for many years. Modern additive manufacturing techniques, however, have been blended with three-dimensional computer imaging and modeling in various types to produce shapes and physical features on articles that are not readily produced with conventional molding, shaping, or machining techniques. Such techniques were initially developed using polymer compositions that are fusible or polymerizable in response to a controllable source of light or radiation such as a laser. Three-dimensional articles can be fabricated a layer at a time based on data from a corresponding layer of a three-dimensional computer model, which is generally known as stereolithography. With these techniques, a polymer powder or polymerizable liquid polymer composition is exposed to a source of energy such as a laser to fuse a thermoplastic polymer powder by heating it to a ...

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19-01-2017 дата публикации

Stable undercooled metallic particles for engineering at ambient conditions

Номер: US20170014958A1
Принадлежит:

Undercooled liquid metallic core-shell particles, whose core is stable against solidification at ambient conditions, i.e. under near ambient temperature and pressure conditions, are used to join or repair metallic non-particulate components. The undercooled-shell particles in the form of nano-size or micro-size particles comprise an undercooled stable liquid metallic core encapsulated inside an outer shell, which can comprise an oxide or other stabilizer shell typically formed in-situ on the undercooled liquid metallic core. The shell is ruptured to release the liquid phase core material to join or repair a component(s). 1. A method of joining under ambient conditions , comprising using one or more undercooled liquid metallic core-shell particles in a manner to join one or more metallic or nonmetallic components by rupturing the outer shell of the undercooled core-shell particles to release the undercooled liquid metallic core material to contact the one or more components and solidify.2. The method wherein the liquid metallic material of the undercooled particle core has a melting point Tin the range of 26 to 900° C.3. The method of wherein the chemistry of the one or more metallic components is the same or different from the chemistry of the liquid metallic material of the core.4. The method of for joining said one or more metallic or nonmetallic components that comprise non-particulate material.5. The method of for joining said one or more metallic or nonmetallic components that comprise one or more particulates.6. The method of wherein the one or more particulates comprise other of said liquid metallic core-shell particles that are joined together.7. The method of wherein the particulates are placed in a mold or a container and their outer shells then are ruptured to join the particulates in the mold or container.8. The method of wherein the one or more core-shell particles is/are assembled as a layer between metallic or non-metallic components to be joined and ...

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16-01-2020 дата публикации

Sb-Te-Based Alloy Sintered Compact Sputtering Target

Номер: US20200017955A1
Принадлежит:

An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 μm or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 μm or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering. 1. An Sb—Te-based alloy sputtering target having a composition containing Sb and Te as main constituent elements thereof and carbon or boron in an amount of more than 10 at % and equal to or less than 30 at % , having a relative density of 97.85% or more , and having a structure comprising grains of an Sb—Te-based alloy phase and a dispersion of grains of the carbon or boron , wherein the grains of the Sb—Te-based alloy phase have an average size of 3 μm or less and a standard deviation of less than 1.00 , the grains of the carbon or boron have an average size of 0.5 μm or less and a standard deviation of less than 0.20 , and , for the average size of the grains of the Sb—Te-based alloy phase expressed by X and the average size of the grains of the carbon or boron expressed by Y , a ratio Y/X is within a range of from 0.155 to 0.5.2. The Sb—Te-based alloy sputtering target according to claim 1 , containing one or more elements selected from the group consisting of Ag claim 1 , In claim 1 , Si claim 1 , Ge claim 1 , Ga claim 1 , Ti claim 1 , Au claim 1 , Pt claim 1 , and Pd in a total amount of 30 at % or less.3. The Sb—Te- ...

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22-01-2015 дата публикации

NEGATIVE ACTIVE MATERIAL, NEGATIVE ELECTRODE AND LITHIUM BATTERY INCLUDING THE NEGATIVE ACTIVE MATERIAL, AND METHOD OF PREPARING THE NEGATIVE ACTIVE MATERIAL

Номер: US20150021516A1
Принадлежит:

A negative active material, a lithium battery including the negative active material, and a method of preparing the negative active material. The negative active material includes a silicon-based alloy including Si, Al, and Fe. The silicon-based alloy includes an active phase of silicon nanoparticles and an inactive phase of SiAlFeand SiFe in a ratios suitable to improve the lifespan of the lithium battery. 1. A negative active material comprising a silicon-based alloy comprising silicon nanoparticles dispersed in an alloy matrix , the alloy matrix comprising SiAlFeand SiFe , wherein the ratio of the sum of the atomic fractions of Si , Al , and Fe as SiAlFeto the sum of the atomic fractions of Si and Fe as SiFe is about 2 to about 12.2. The negative active material of claim 1 , wherein the ratio of the sum of the atomic fractions of Si claim 1 , Al claim 1 , and Fe as SiAlFeto the sum of the atomic fractions of Si and Fe as SiFe is about 4 to about 10.3. The negative active material of claim 1 , wherein the silicon-based alloy comprises about 40 at % to about 80 at % of Si claim 1 , about 10 at % to about 40 at % of Al claim 1 , and about 5 at % to about 25 at % of Fe claim 1 , and the total sum of atomic fractions of Si claim 1 , Al claim 1 , and Fe is 100 at %.4. The negative active material of claim 1 , wherein in the silicon-based alloy claim 1 , a ratio of the atomic fraction of Al to the atomic fraction of Fe is about 0.7 to about 1.1.5. The negative active material of claim 1 , wherein the silicon-based alloy is a pulverized powder having a D50 of about 0.3 μm to about 10 μm.6. The negative active material of claim 1 , wherein the silicon-based alloy comprises inactive silicon and active silicon claim 1 , the alloy matrix comprising the inactive silicon and the silicon nanoparticles comprising the active silicon.7. The negative active material of claim 6 , wherein in the silicon-based alloy claim 6 , an amount of the active silicon is about 40 at % to about ...

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25-01-2018 дата публикации

METHOD FOR PRODUCING R-T-B SYSTEM SINTERED MAGNET

Номер: US20180025819A1
Принадлежит: HITACHI METALS, LTD.

A step of providing an R1-T1-X (where R1 is mainly Nd; T1 is mainly Fe; and X is mainly B) based sintered alloy compact mainly characterized by a molar ratio of [T1]/[X] being 13.0 or more; a step or providing an R2-Ga—Cu (where R2 is mainly Pr and/or Nd and accounts for not less than 65 mol % and not more than 95 mol %; and [Cu]/([Ga]+[Cu]) is not less than 0.1 and not more than 0.9 by mole ratio) based alloy; and a step of, while allowing at least a portion of a surface of the R1-T1-X based sintered alloy compact to be in contact with at least a portion of the R2-Ga—Cu based alloy, performing a heat treatment at a temperature which is not less than 450° C. and not more than 600° C. 1: A method for producing a sintered R-T-B (where R is at least one rare-earth element which always includes Nd; T is at least one transition metal element which always includes Fe; and B is partially replaceable with C) based magnet , comprising:a step of providing an R1-T1-X based sintered alloy compact, where R1 is at least one rare-earth element which always includes Nd, such that the R1-T1-X based sintered alloy compact contains R1 at a ratio of not less than 27 mass % and not more than 35 mass %; T1 is Fe, or Fe and M; M is one or more selected from the group consisting of Ga, Al, Si, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Ge, Zr, Nb, Mo and Ag; X is B, where B is partially replaceable by C; and a molar ratio of [T1]/[X] is not less than 13.0;a step of providing an R2-Ga—Cu based alloy, where R2 is at least one rare-earth element which always includes Pr and/or Nd; the R2-Ga—Cu based alloy contains R2 at a ratio of not less than 65 mol % and not more than 95 mol %; and [Cu]/([Ga]+[Cu]) is not less than 0.1 and not more than 0.9 by mole ratio; anda step of, while allowing at least a portion of the R2-Ga—Cu based alloy to be in contact with at least a portion of a surface of the R1-T1-X based sintered alloy compact, performing a heat treatment at a temperature which is not less than 450° C. ...

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25-01-2018 дата публикации

R-T-B BASED SINTERED MAGNET

Номер: US20180025820A1
Принадлежит: TDK Corporation

An R-T-B based sintered magnet containing a first heavy rare earth element, in which R includes Nd, T includes Co and Fe, the first heavy rare earth element includes Tb or Dy, the R-T-B based sintered magnet has a region in which a concentration of the first heavy rare earth element decreases from the surface toward the inside, a first grain boundary phase which contains the first heavy rare earth element and Nd but does not contain Co is present in one cross section including the region, and an area occupied by the first grain boundary phase in one cross section including the region is 1.8% or less. 1. An R-T-B based sintered magnet , whereinR includes Nd,T includes Co and Fe, anda total area of voids in one cross section of the R-T-B based sintered magnet is 0.2% or less of an area of the cross section.2. An R-T-B based sintered magnet comprising a first heavy rare earth element , whereinR includes Nd,T includes Co and Fe,the first heavy rare earth element includes Tb or Dy,the R-T-B based sintered magnet comprises a region having a concentration of the first heavy rare earth element decreasing from a surface toward an inside,a first grain boundary phase which contains the first heavy rare earth element and Nd but does not contain Co is present in one cross section including the region, andan area occupied by the first grain boundary phase in the cross section is 1.8% or less.3. The R-T-B based sintered magnet according to claim 2 , whereina second grain boundary phase which contains Nd and Co but does not contain the first heavy rare earth element is further present in the region anda ratio of an area of the first grain boundary phase to an area of the second grain boundary phase is 2.0 or less.4. The R-T-B based sintered magnet according to claim 2 , further comprising a second heavy rare earth element claim 2 , whereinthe second heavy rare earth element is substantially uniformly contained over the entire grain boundary phase of the R-T-B based sintered magnet ...

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23-01-2020 дата публикации

STABLE BINARY NANOCRYSTALLINE ALLOYS AND METHODS OF IDENTIFYING SAME

Номер: US20200025697A1
Принадлежит: Massachusetts Institute of Technology

Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase. In different aspects, an enthalpy of mixing of the binary alloy may be calculated as a first thermodynamic parameter, and an enthalpy of segregation of the binary alloy may be calculated as a second thermodynamic parameter. In another example, a diagram delineating a plurality of regions respectively representing different stable phases of at least one binary alloy is employed, wherein respective regions of the plurality of regions are delineated by at least one boundary determined as a function of at least two thermodynamic parameters associated with grain growth and phase separation of the at least one binary alloy. 143-. (canceled)44. An alloy comprising:a solvent element and a solute element;the alloy comprising at least one of Al—Pb, Co—Bi, Co—Cd, Co—Pb, Cr—Au, Cr—Bi, Cr—La, Cr—Na, Cr—Pb, Cr—Sc, Cr—Sn, Cr—Th, Cr—Y, Cu—Y, Fe—Ba, Fe—Bi, Fe—Ca, Fe—Cd, Fe—In, Fe—La, Fe—Mg, Fe—Pb, Hf—Mg, Hf—Ti, Ir—Cu, Ir—Ni, Ir—Rh, La—Mn, Mn—Ba, Mn—Ca, Mn—Cd, Mn—La, Mn—Mg, Mn—Pb, Mn—Sr, Mn—Tl, Mo—Au, Mo—Cr, Mo—In, Mo—Na, Mo—Sc, Mo—Th, Mo—V, Mo—Y, Nb—Bi, Nb—Cu, Nb—Ti, Nb—Tl, Nb—V, Ni—Pb, Ni—Sn, Ni—Tl, Os—Bi, Os—Co, Os—Ni, Os—Pb, Os—Pt, Os—Rh, Os—Ru, Pb—Al, Pd—Au, Pt—Au, Re—Bi, Re—Co, Re—La, Re—Ni, Re—Pd, Re—Rh, Re—Sb, Re—Sn, Re—Tc, Rh—Au, Rh—Co, Rh—Cu, Rh—Ni, Ru—Bi, Ru—Co, Ru—Hg, Ru—Ni, Ru—Pt, Ru—Sb, Ta—Bi, Ta—Cu, Ta—Hf, Ta—In, Ta—Ti, Ta—Tl, Ta—Zr, Tc—Ni, Tc—Pd, Tc—Rh, Th—La, Th—Sc, Th—Y, V—Bi, V—Cd, V—In, V—Ti, V—Tl, W—Au, W—Cr, W—In, W—Mn, W—Sb, W—Sc, W—Sn, W—Sr, W—Th, W—Ti, W—V, W ...

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02-02-2017 дата публикации

NANOWIRE FOR ANODE MATERIAL OF LITHIUM ION CELL AND METHOD OF PREPARING THE SAME

Номер: US20170033356A1
Принадлежит:

The disclosure describes a nanowire for an anode material of a lithium ion cell and a method of preparing the same. The nanowire includes silicon (Si) and germanium (Ge). The nanowire has a content of the silicon (Si) higher than a content of the germanium (Ge) at a surface thereof, and has the content of germanium (Ge) higher than the content of the silicon (Si) at an inner part thereof. 1. A nanowire for an anode material of a lithium ion cell , the nanowire comprising silicon (Si) and germanium (Ge) , wherein the nanowire has a content of the silicon (Si) higher than a content of the germanium (Ge) at a surface thereof , and has the content of germanium (Ge) higher than the content of the silicon (Si) at an inner part thereof.2. The nanowire of claim 1 , wherein the silicon (Si) has the content in a range of 1 wt % to 10 wt % claim 1 , and the germanium (Ge) has the content in a range of 90 wt % to 99 wt %.3. The nanowire of claim 1 , wherein a chemical composition of the nanowire is GeSi(0.01≦x≦0.1).4. A method of fabricating a nanowire for an anode material of a lithium ion cell claim 1 , the method comprising:performing heat treatment with respect to the nanowire including silicon (Si) and germanium (Ge) under a hydrogen atmosphere; anddistributing the silicon (Si) and the germanium (Ge) included in the nanowire to a surface of the nanowire and an inner part of the nanowire, respectively.5. The method of claim 4 , wherein the silicon (Si) has the content in a range of 1 wt % to 10 wt % claim 4 , and the germanium (Ge) has the content in a range of 90 wt % to 99 wt %.6. The method of claim 4 , wherein the heat treatment is performed at a temperature in a range of 700° C. to 900° C.7. A lithium ion cell including an anode including the nanowire for the anode material of the lithium ion cell according to . This application claims priority to Korean Patent Application No. 10-2015-0107138 filed on Jul. 29, 2015, and all the benefits accruing therefrom under 35 U.S. ...

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01-05-2014 дата публикации

Rh diffusion source, and method for producing r-t-b-based sintered magnet using same

Номер: US20140120248A1
Автор: Futoshi Kuniyoshi
Принадлежит: Hitachi Metals Ltd

[Problem] To provide a method for producing a sintered R-T-B based magnet which can get a heavy rare-earth element RH diffused efficiently inside a sintered R-T-B based magnet body. [Solution] This method for producing a sintered R-T-B based magnet includes the steps of: providing a sintered R-T-B based magnet body (where R is a rare-earth element and T is a transition metal element which is mostly comprised of Fe); providing an RH diffusion source which is an alloy comprising: 0.2 mass % to 18 mass % of light rare-earth element RL (which is at least one of Nd and Pr); 40 mass % to 70 mass % of Fe; and a heavy rare-earth element RH (which is at least one of Dy and Tb) as the balance, wherein the heavy rare-earth element RH and Fe have a mass ratio RH:Fe which falls within the range of three to two to three to seven; and performing an RH diffusion process by loading the sintered R-T-B based magnet body and the RH diffusion source into a processing chamber so that the sintered R-T-B based magnet body and the RH diffusion source are movable relative to each other and brought close to, or in contact with, each other, and by heating the sintered R-T-B based magnet body and the RH diffusion source to a processing temperature of 700° C. to 1000° C. while moving the sintered R-T-B based magnet body and the RH diffusion source in the processing chamber either continuously or discontinuously.

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11-02-2016 дата публикации

ELECTRONIC INTERCONNECTS AND DEVICES WITH TOPOLOGICAL SURFACE STATES AND METHODS FOR FABRICATING SAME

Номер: US20160043033A1
Принадлежит: THE TRUSTEES OF PRINCETON UNIVERSITY

An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states. 1. An interconnect comprising a material configured with an essentially insulating bulk portion having topological surface states occupied with charge carriers , wherein the topological surface states and the essentially insulating bulk portion each have an electrical mobility , the electrical mobility of the topological surface states being at least 12 times greater than the electrical mobility of the essentially insulating bulk portion.2. The interconnect of claim 1 , wherein the material has a mobility for the charge carriers of at least 9000 centimeter-squared per volt-second (cm/V-s).3. The interconnect of claim 1 , wherein the material comprises a non-stoichiometric material.4. The interconnect of claim 1 , wherein the material comprises an element from column 15 of the periodic table.5. The interconnect of claim 1 , wherein the material comprises an element from column 16 of the periodic table.6. The interconnect of claim 1 , wherein the material comprises an element from column 13 of the periodic table.7. The interconnect of claim 1 , wherein the material comprises an element from column 14 of the periodic table.8. The interconnect of claim 1 , wherein the material comprises a solid solution alloy.9. The interconnect of claim 1 , wherein the material has an atomic composition BiSb claim 1 , where 0.07≦x≦1.10. The interconnect of claim 1 , wherein the material has an atomic composition BiSbSeTewhere 0≦x≦1 and 0≦y≦1.11. The interconnect of claim 1 , wherein the material has an atomic composition TlBiSeTe claim 1 , where 0≦x≦1.12. ...

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07-02-2019 дата публикации

SPUTTERING TARGET AND METHOD OF MANUFACTURING SPUTTERING TARGET

Номер: US20190039131A1
Принадлежит:

Provided is a sputtering target having a composition comprising: 5 at % or more and 60 at % or less of Ga, and 0.01 at % or more and 5 at % or less of alkali metal, as metal components; and a Cu balance including inevitable impurities, wherein a concentration of the alkali metal on a surface on a sputtering surface side is less than 80% of a concentration of the alkali metal inside the target. 1. A sputtering target having a composition comprising: 5 at % or more and 60 at % or less of Ga; and 0.01 at % or more and 5 at % or less of alkali metal , as metal components; and a Cu balance including inevitable impurities , whereina concentration of the alkali metal on a surface on a sputtering surface side is less than 80% of a concentration of the alkali metal inside the target.2. The sputtering target according to claim 1 , wherein the alkali metal concentration on the sputtering surface is 1 at % or less.3. The sputtering target according to claim 1 , wherein a relative density is 90% or more.4. The sputtering target according to claim 1 , wherein an arithmetic average roughness Ra of the sputtering surface is 1.6 μm or less.5. The sputtering target according to claim 1 , wherein the composition further comprises one or more of metal elements selected from In claim 1 , Al claim 1 , Ag claim 1 , Zn claim 1 , Sn claim 1 , Bi claim 1 , Sb claim 1 , and Mg as metal components in a range of 0.1 at % or more and 5.0 at % or less in total.6. A method of manufacturing the sputtering target according to claim 1 , the method comprising:a mixing and crushing step of mixing and crushing a raw material powder including Cu and Ga, and an alkali metal compound powder to obtain a mixed powder;a sintering step of obtaining a sintered material by sintering the mixed powder obtained in the mixing and crushing step; andan alkali metal removing step of removing an alkali metal on a surface area on the sputtering surface side of the obtained sintered material,wherein the alkali metal ...

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19-02-2015 дата публикации

CONTAINMENT OF MOLTEN MATERIALS HAVING SILICON

Номер: US20150050183A1
Принадлежит:

Silicon eutectic alloy compositions and methods for making the same are disclosed. In one approach, a method may include using a glass carbon container to restrict contamination of the eutectic alloy melt. In an alternative approach, a method may include using a container having aluminum. The aluminum in the container may provide aluminum that is incorporated into the silicon eutectic alloy. Silicon eutectic bodies made by such methods are also disclosed. 1. A method of making a silicon eutectic alloy body , the method comprising:{'sub': 'a', 'heating a mixture in a container thereby forming a eutectic alloy melt, wherein the mixture includes silicon and a metallic element M, where portions of the container in contact with the eutectic alloy melt comprise glassy carbon; and'}{'sub': a', '2, 'removing heat from the eutectic alloy melt to solidify the eutectic alloy melt, thereby forming a silicon eutectic alloy body comprising having a eutectic aggregation including a first phase comprising the silicon and a second phase comprising the metallic element a, wherein the second phase has a formula MSi.'}2. The method of claim 1 , wherein the mixture comprises a third phase comprising the metallic element M claim 1 , and wherein claim 1 , after the removing step claim 1 , the body comprising the eutectic aggregation comprises a third phase comprising the metallic element M claim 1 , wherein the third phase has a formula MSi claim 1 , and wherein the second and third phases are immiscible.3. The method of claim 2 , wherein the metallic element Mcomprises chromium and the metallic element Mcomprises vanadium4. The method of claim 1 , wherein a carbide phase forms between the eutectic alloy melt and the container.5. The method of claim 4 , wherein the carbide phase comprises silicon carbide.6. The method of claim 1 , wherein the glassy carbon substantially does not contaminate the eutectic alloy melt.7. The method of claim 1 , wherein the eutectic alloy melt is substantially ...

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08-05-2014 дата публикации

HIGH-PURITY ERBIUM, SPUTTERING TARGET COMPRISING HIGH-PURITY ERBIUM, METAL GATE FILM HAVING HIGH-PURITY ERBIUM AS MAIN COMPONENT THEREOF, AND PRODUCTION METHOD FOR HIGH-PURITY ERBIUM

Номер: US20140124366A1
Автор: Takahata Masahiro
Принадлежит: JX NIPPON MINING & METALS CORPORATION

High-purity erbium having a purity of 5N or higher excluding rare earth elements and gas components, and containing Al, Fe, Cu, and Ta each in an amount of 1 wtppm or less, W in an amount of 10 wtppm or less, carbon in an amount of 150 wtppm or less, alkali metals and alkali earth metals each in an amount of 1 wtppm or less, other transition metal elements in a total amount of 10 wtppm or less, and U and Th as radioactive elements each in an amount of 10 wtppb or less. An object of this invention is to provide a method of highly purifying erbium, which has a high vapor pressure and is difficult to refine in a molten state, as well as technology for efficiently and stably providing high-purity erbium obtained with the foregoing method, a sputtering target made of high-purity erbium, and a metal gate film having high-purity erbium as a main component thereof. 1. High-purity erbium having a purity of 5N or higher excluding rare earth elements and gas components , and containing Al , Fe , Cu , and Ta each in an amount of 1 wtppm or less , W in an amount of 10 wtppm or less , carbon in an amount of 150 wtppm or less , alkali metals and alkali earth metals each in an amount of 1 wtppm or less , other transition metal elements in a total amount of 10 wtppm or less , and U and Th as radioactive elements each in an amount of 10 wtppb or less.2. A high-purity erbium sputtering target consisting of the high-purity erbium according to .3. A metal gate film having claim 1 , as its main component claim 1 , high-purity erbium having a purity of 5N or higher excluding rare earth elements and gas components claim 1 , and containing Al claim 1 , Fe claim 1 , Cu claim 1 , and Ta each in an amount of 1 wtppm or less claim 1 , W in an amount of 10 wtppm or less claim 1 , carbon in an amount of 150 wtppm or less claim 1 , alkali metals and alkali earth metals each in an amount of 1 wtppm or less claim 1 , other transition metal elements in a total amount of 10 wtppm or less claim 1 , and ...

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03-03-2022 дата публикации

COATED IRREGULAR SURFACES

Номер: US20220063144A1
Принадлежит:

Coated irregular surfaces, replicas made therefrom, and methods of making the same. A particle-coated substrate includes a coating including undercooled liquid metallic particles. The particles include a solid shell comprising a metal oxide, and a liquid metallic core that is below the melting point of the liquid metallic core. The particle-coated substrate also includes a substrate including an irregular surface, wherein the coating is on the irregular surface. 1. A method of forming a metallic-coated substrate , the method comprising: [ the solid shell comprising a metal oxide, and', 'a liquid metallic core that is below the melting point of the liquid metallic core, and, 'a particle coating comprising undercooled liquid metallic particles, the particles comprising'}, 'a substrate comprising an irregular surface,', 'wherein the coating is on the irregular surface of the substrate; and, 'rupturing solid shells of undercooled liquid metallic particles of a particle-coated substrate, the particle-coated substrate comprising'}wherein the rupturing forms the metallic-coated substrate, the metallic-coated substrate comprising a metallic coating on the irregular surface of the substrate, the metallic coating comprising a solidified metal and/or metal alloy and solid metal oxide shells.2. The method of claim 1 , wherein the rupturing comprises a chemical trigger claim 1 , light impingement claim 1 , ultrasound impingement claim 1 , vibrational forces claim 1 , heat application claim 1 , or a combination thereof.3. The method of claim 1 , wherein the metallic coating is electrically conductive claim 1 , thermally conductive claim 1 , or a combination thereof.4. The method of claim 1 , wherein the substrate is a soft substrate claim 1 , wherein the particle coating induces a texture on the substrate.5. The method of claim 1 , wherein the liquid metallic core comprises an alloy comprising Bi claim 1 , In claim 1 , Sn claim 1 , Ag claim 1 , Au claim 1 , or a combination ...

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16-02-2017 дата публикации

METHOD FOR MANUFACTURING THERMAL INTERFACE SHEET

Номер: US20170047269A1
Автор: NAKAMURA Naoaki
Принадлежит:

A thermal interface sheet includes a peripheral portion, in a surface direction, configured to have a melting point higher than the melting point of a central portion in the surface direction. 1. A method for manufacturing a thermal interface sheet , comprising:preparing a first solder region having a quadratic prism shape and being formed from a first solder;immersing the first solder region into a second solder which is melted so as to form a second solder region having a quadratic prism shape around the first solder region;immersing the first solder region and the second solder region into a third solder which is melted so as to form a third solder region having a quadratic prism shape around the second solder region; andcutting the first solder region, the second solder region and the third solder region,wherein a third melting point of the third solder is larger than a second melting point of the second solder and the second melting point is larger than a first melting point of the first solder.2. The method according to claim 1 , wherein the first solder region claim 1 , the second solder region and the third region are provided concentrically.3. The method according to claim 1 , wherein the first solder region is cooled before being immersed into the second solder claim 1 , and the first solder region and the second solder region are cooled before being immersed into the third solder.4. The method according to claim 1 , wherein the first solder region claim 1 , the second solder region and the third solder region contain one of an In—Ag solder claim 1 , a Sn—Cu solder claim 1 , a Sn—Ag—Cu solder claim 1 , and a Sn—Ag—Cu—Bi solder.5. A method for manufacturing a thermal interface sheet claim 1 , comprising:preparing a first solder region having a quadratic prism shape and being formed from a first solder;winding, onto the first solder region, a second solder which is sheet-shaped so as to form a second solder region having a quadratic prism shape around the ...

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15-02-2018 дата публикации

METHOD FOR MANUFACTURING R-T-B SINTERED MAGNET

Номер: US20180047504A1
Принадлежит:

[Problem] There is provided a method of producing a sintered R-T-B based magnet in which even the intergranular grain boundaries in the magnet interior can be made thick, which does not allow coercivity improvement effects to be significantly undermined even after a surface grinding, and which has high coercivity without the use of heavy rare-earth elements. 1. A method for producing a sintered R-T-B (where R is at least one rare-earth element which always includes Nd; T is at least one transition metal element which always includes Fe; and B is partially replaceable with C) based magnet , comprising: a step of providing an R1-T1-A-X (where R1 is at least one rare-earth element which always includes Nd and accounts for not less than 27 mass % and not more than 35 mass %; T1 is Fe , or Fe and M; M is one or more selected from among Ga , Al , Si , Cr , Mn , Co , Ni , Cu , Zn , Ge and Ag; A is at least one of Ti , Zr , Hf , V , Nb and Mo; a molar ratio of [T1]/([X]−2[A]) is not less than 13.0; and X is B , where B is partially replaceable by C) based sintered alloy compact;a step of providing an R2-Ga—Cu (where R2 is at least one rare-earth element which always includes Pr and/or Nd and accounts for not less than 65 mol % and not more than 95 mol %; and [Cu]/([Ga]+[Cu]) is not less than 0.1 and not more than 0.9 by mole ratio) based alloy; anda step of, while allowing at least a portion of the R2-Ga—Cu based alloy to be in contact with at least a portion of a surface of the R1-T1-A-X based sintered alloy compact, performing a heat treatment at a temperature which is not less than 450° C. and not greater than 600° C. in a vacuum or an inert gas ambient.2. The method for producing a sintered R-T-B based magnet of claim 1 , wherein T1 in the R1-T1-A-X comprises Fe and M claim 1 , where M is one or more selected from the group consisting of Al claim 1 , Si claim 1 , Cr claim 1 , Mn claim 1 , Co claim 1 , Ni claim 1 , Cu claim 1 , Zn claim 1 , Ge and Ag.3. The method for ...

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03-03-2022 дата публикации

Method for Manufacturing ScAlN Target

Номер: US20220064782A1
Принадлежит: Solmates Bv

The invention relates to a method for producing a scandium aluminum nitride (ScAlN) target body for pulsed laser deposition (PLD), which includes the steps of: providing a scandium aluminum alloy body; pulverizing the scandium aluminum alloy body into scandium aluminum particles; nitridizing the scandium aluminum particles into scandium aluminium nitride particles; and hot pressing the scandium aluminum nitride particles into a scandium aluminum nitride target body.

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15-05-2014 дата публикации

Ecological ammunition

Номер: US20140130698A1
Принадлежит: REAL FEDERACION ESPANOLA DE CAZA

The present invention relates to a composite material for the production of ecological ammunition characterized in that it comprises a) a metal matrix formed by a zinc and bismuth alloy, zinc and aluminum alloy, tin and bismuth alloy or zinc and tin alloy and a metal selected from aluminum, bismuth and the combination thereof and b) reinforcing metal particles distributed therein selected from wolframium, ferro-wolframium, ferro-wolframium carbides, wolframium carbides, wolframium oxides and ferro-wolframium oxides, subjected to oxidation before being added to the metal matrix.

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05-03-2015 дата публикации

SPARK PLUG AND SPARK PLUG ELECTRODE

Номер: US20150061486A1
Принадлежит: UNISON INDUSTRIES, LLC

A spark plug having a shell defining a cavity, an insulator disposed within the cavity, and an electrode at least partially encapsulated by the insulator. The electrode may be formed from a ruthenium (Ru) electrode material having a columnar grain structure. Further, the ruthenium (Ru) electrode material may have a purity greater than 99.90 wt. percentage. 1. A spark plug , comprising:a shell defining a cavity;an insulator disposed within the cavity; andan electrode at least partially encapsulated by an insulator and formed from a ruthenium (Ru) electrode material having a columnar grain structure.2. The spark plug of wherein the ruthenium (Ru) electrode material has a purity greater than 99.90 wt. percentage.3. The spark plug of wherein the Ru has a purity greater than 99.990 wt. percentage.4. The spark plug of wherein the Ru has a purity greater than 99.9995 wt. percentage.5. The spark plug of wherein the spark plug is a turbine igniter.6. The spark plug of wherein the electrode comprises a core and a Ru layer on the core.7. The spark plug of wherein the Ru layer is electroformed on the core.8. The spark plug of wherein the electrode is a center electrode.9. The spark plug of claim 1 , further comprising a terminal that may be selectively operably coupled to an ignition system.10. The spark plug of claim 9 , further comprising an internal conductor coupling the terminal to the electrode.11. The spark plug of claim 1 , further comprising a ground electrode coupled to the shell and spaced from the electrode.12. A spark plug electrode claim 1 , comprising:an electrode material having a columnar grain structure and formed from high purity ruthenium (Ru) having a purity greater than 99.90 wt. percentage.13. The spark plug electrode of wherein the Ru has a purity greater than 99.990 wt. percentage.14. The spark plug electrode of wherein the Ru has a purity greater than 99.9995 wt. percentage. Contemporary engines including automotive and aviation engines include spark ...

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05-03-2015 дата публикации

METAL DEPOSITION USING ORGANIC VAPOR PHASE DEPOSITION (VPD) SYSTEM

Номер: US20150064483A1
Принадлежит:

A method of depositing a film of a metal having a volatilization temperature higher than 350° C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film. 1. A method of depositing a film of a metallic material having a volatilization temperature higher than 350° C. from a source material , comprising:providing the source material in a vacuum deposition processing chamber, the vacuum deposition processing chamber having an internal pressure;providing a substrate in the vacuum deposition processing chamber, the substrate being maintained at a substrate temperature that is lower than the volatilization temperature and being spaced apart from, but in fluid communication with, said source material;reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals;volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; andtransporting said volatilized metal to said substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms said film.2. The ...

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22-05-2014 дата публикации

HIGH-PURITY YTTRIUM, PROCESS OF PRODUCING HIGH-PURITY YTTRIUM, HIGH-PURITY YTTRIUM SPUTTERING TARGET, METAL GATE FILM DEPOSITED WITH HIGH-PURITY YTTRIUM SPUTTERING TARGET, AND SEMICONDUCTOR ELEMENT AND DEVICE EQUIPPED WITH THE METAL GATE FILM

Номер: US20140140884A1
Автор: Takahata Masahiro
Принадлежит: JX NIPPON MINING & METALS CORPORATION

Provided are high-purity yttrium and a high-purity yttrium sputtering target each having a purity, excluding rare earth elements and gas components, of 5 N or more and containing 1 wt ppm or less of each of Al, Fe, and Cu; a method of producing high-purity yttrium by molten salt electrolysis of a raw material being a crude yttrium oxide having a purity, excluding gas components, of 4N or less at a bath temperature of 500° C. to 800° C. to obtain yttrium crystals, desalting treatment, water washing, and drying of the yttrium crystals, and then electron beam melting for removing volatile materials to achieve a purity, excluding rare earth elements and gas components, of 5N or more; and a technology capable of efficiently and stably providing high-purity yttrium, a sputtering target composed of the high-purity yttrium, and a metal-gate thin film mainly composed of the high-purity yttrium. 1. High-purity yttrium having a purity , excluding rare earth elements and gas components , of 5N or more and containing 1 wt ppm or less of each of Al , Fe , and Cu and 150 wt ppm or less of carbon.2. The high-purity yttrium according to claim 1 , containing 10 wt ppm or less of the total amount of W claim 1 , Mo claim 1 , and Ta claim 1 , and 50 wt ppb or less of each of U and Th.3. The high-purity yttrium according to claim 2 , having a purity claim 2 , excluding rare earth elements and gas components claim 2 , of 5N or more and containing 10 wt ppm or less of the total amount of Al claim 2 , Fe claim 2 , Cu claim 2 , W claim 2 , Mo claim 2 , Ta claim 2 , U claim 2 , Th claim 2 , and carbon.4. The high-purity yttrium according to claim 3 , wherein radiation dose (α-ray dose) is less than 0.001 cph/cm.5. A method of producing high-purity yttrium claim 3 , the method comprising:molten salt electrolysis of a raw material being a crude yttrium oxide having a purity, excluding gas components, of 4N or less at a bath temperature of 500° C. to 800° C. to obtain yttrium crystals;desalting ...

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04-03-2021 дата публикации

Magnetocaloric alloys useful for magnetic refrigeration applications

Номер: US20210065941A1

This invention relates to magnetocaloric materials comprising alloys useful for magnetic refrigeration applications. In some embodiments, the disclosed alloys may be Cerium, Neodymium, and/or Gadolinium based compositions that are fairly inexpensive, and in some cases exhibit only 2 nd order magnetic phase transitions near their curie temperature, thus there are limited thermal and structural hysteresis losses. This makes these compositions attractive candidates for use in magnetic refrigeration applications. Surprisingly, the performance of the disclosed materials is similar or better to many of the known expensive rare-earth based magnetocaloric materials.

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02-03-2017 дата публикации

FLUORIDE ION BATTERY

Номер: US20170062805A1
Принадлежит:

An object of the present invention is to provide a fluoride ion battery in which excess voltage at the time of charging is decreased. The present invention achieves the object by providing a fluoride ion battery comprising a cathode active material layer containing a cathode active material, an anode active material layer containing an anode active material, and an electrolyte layer formed between the cathode active material layer and the anode active material layer; wherein the anode active material is an alloy containing at least a Ce element and a Pb element. 1. A fluoride ion battery , comprising:a cathode active material layer containing a cathode active material, an anode active material layer containing an anode active material, and an electrolyte layer formed between the cathode active material layer and the anode active material layer;wherein the anode active material is an alloy containing at least a Ce element and a Pb element.2. The fluoride ion battery according to claim 1 , wherein the anode active material further contains an Al element. The present invention relates to a fluoride ion battery in which over voltage at the time of charging is decreased.As high-voltage and high-energy density batteries, for example, Li ion batteries are known. The Li ion battery is a cation-based battery utilizing a reaction between a Li ion and a cathode active material and a reaction between a Li ion and an anode active material. Meanwhile, as anion-based batteries, fluoride ion batteries utilizing a reaction of a fluoride ion are known.For example, Patent Literature 1 discloses an electrochemical cell (a fluoride ion battery) comprising a cathode, an anode, and an electrolyte capable of conducting an anion charge carrier (F). Also, in Patent Literature 1, CeFx is exemplified as a useful fluoride ion host material for the anode.Patent Literature 2 discloses a secondary solid state current source consisting of an anode (An) in a form of a metal or an alloy, whose ...

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28-02-2019 дата публикации

Rapid Synthesis of Gallium Alloys

Номер: US20190062868A1
Принадлежит:

The ability to generate complex gallium alloys using metal amides, Ga(NR)and M(NR), is easily accomplished by heating the two metal amides in predetermined ratios. The product can be isolated as GaMwhere x and y can vary. 1. A method to synthesize a gallium alloy , comprising:mixing a gallium amide with a rare earth metal amide; andheating the mixture to an elevated temperature in an inert environment to form an alloy comprising gallium and the rare earth metal.2. The method of claim 1 , wherein the gallium amide comprises gallium dimethylamide.3. The method of claim 1 , wherein the rare earth metal amide comprises scandium amide.4. The method of claim 3 , wherein the scandium amide comprises scandium dimethylamide. This application claims the benefit of U.S. Provisional Application No. 62/552,702, filed Aug. 31, 2017, which is incorporated herein by reference.This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.The present invention relates to metal alloys and, in particular, to the rapid synthesis of gallium alloys from metal amides.The present invention is directed to a method of heating metal amides together in an inert atmosphere to synthesize a gallium alloy. The method comprises mixing a gallium amide with a rare earth metal amide; and heating the mixture to an elevated temperature in an inert environment to form an alloy comprising gallium and the rare earth metal. For example, the gallium amide can comprise gallium dimethylamide. For example, the rare earth metal amide can comprise a scandium amide, such as scandium dimethylamide.Metal amides are a class of coordination compounds composed of a metal center with amide ligands of the form NR. The invention is directed to a method to synthesize complex gallium alloys using Ga(NR)and a series of M(NR)by heating the two metal amides in ...

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29-05-2014 дата публикации

Process-compatible sputtering target for forming ferroelectric memory capacitor plates

Номер: US20140147940A1
Принадлежит: Texas Instruments Inc

A sputtering target for a conductive oxide, such as SrRuO 3 , to be used for the sputter deposition of a conductive film that is to be in contact with a ferroelectric material in an integrated circuit. The sputtering target is formed by the sintering of a powder mixture of the conductive oxide with a sintering agent of an oxide of one of the constituents of the ferroelectric material. For the example of lead-zirconium-titanate (PZT) as the ferroelectric material, the sintering agent is one or more of a lead oxide, a zirconium oxide, and a titanium oxide. The resulting sputtering target is of higher density and lower porosity, resulting in an improved sputter deposited film that does not include an atomic species beyond those of the ferroelectric material deposited adjacent to that film.

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17-03-2016 дата публикации

PERMANENT MAGNET SOURCE POWDER FABRICATION METHOD, PERMANENT MAGNET FABRICATION METHOD, AND PERMANENT MAGNET RAW MATERIAL POWDER INSPECTION METHOD

Номер: US20160074936A1
Принадлежит: TOYOTA JIDOSHA KABUSHIKI KAISHA

A method for producing a raw material powder of a permanent magnet, includes: preparing a material powder of a permanent magnet, measuring magnetic characteristics of the material powder, and judging the quality of the material powder as the raw material powder based on a preliminarily determined relation between magnetic characteristics and the structure of the material powder. A method for producing a permanent magnet includes integrating material powders judged as good in the step of judging the quality as raw material powders by the method for producing a raw material powder of a permanent magnet. A method for inspecting a permanent magnet material powder includes transmitting a magnetic field to a material powder of a permanent magnet, receiving the magnetic field from the material powder, and measuring a magnetic field difference between the transmitted magnetic field and the received magnetic field as magnetic characteristics of the material powder. 19-. (canceled)10. A method for producing a raw material powder of a permanent magnet , which comprises the steps of:preparing a material powder of a permanent magnet,measuring magnetic characteristics of the material powder of the permanent magnet, andjudging the quality of the material powder as the raw material powder based on a preliminarily determined relation between magnetic characteristics and the structure of the material powder, wherein the step of measuring magnetic characteristics of the material powder includes the operation of:transmitting a magnetic field to the material powder, receiving the magnetic field from the material powder, and measuring a magnetic field difference between the transmitted magnetic field and the received magnetic field as the magnetic characteristics.11. The method for producing a raw material powder of a permanent magnet according to claim 10 , wherein an alternating magnetic field is used as the magnetic field.12. The method for producing a raw material powder of a ...

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14-03-2019 дата публикации

Processes for the recovery of uranium from wet-process phosphoric acid using dual or single cycle continuous ion exchange approaches

Номер: US20190078176A1
Принадлежит: K Technologies Inc, OCP SA

In alternative embodiments, the invention provides processes and methods for the recovery, removal or extracting of, and subsequent purification of uranium from a wet-process phosphoric acid using a continuous ion exchange processing approach, where the uranium is recovered from a phosphoric acid, or a phos-acid feedstock using either a dual or a single stage extraction methodology. In both cases an intermediate ammonium uranyl-tricarbonate solution is formed. In alternative embodiments, in the dual cycle approach, this solution is contacted in a second continuous ion exchange system with a strong anion exchange resin then subsequently recovered as an acidic uranyl solution that is further treated to produce an intermediate uranyl peroxide compound which is ultimately calcined to produce the final uranium oxide product. In alternative embodiments, in the single cycle case, the intermediate ammonium uranyl-tricarbonate solution is evaporated to decompose the ammonium carbonate and produce an intermediate uranium carbonate/oxide solid material. These solids are digested in an acid medium, and then processed in the same manner as the secondary regeneration solution from the dual cycle process to produce an intermediate uranyl peroxide that is calcined to produce a final uranium oxide product.

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22-03-2018 дата публикации

Surface-hardened aluminum-rare earth alloys and methods of making the same

Номер: US20180080102A1

Embodiments of surface-hardened aluminum-rare earth alloys and methods of making the alloys are disclosed. In some embodiments, the alloy comprises aluminum and 4 wt % to 60 wt % of a rare earth component X having a maximum solid solubility of ≦0.5 wt % in aluminum. The surface-hardened alloy component has an alloy bulk portion and a hardened alloy surface portion. At least a portion of the hardened alloy surface portion has a Vickers hardness that is at least 30% greater than a Vickers hardness of the alloy bulk portion.

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22-03-2018 дата публикации

Additive manufacturing methods using aluminum-rare earth alloys and products made using such methods

Номер: US20180080103A1

Described herein are additive manufacturing methods and products made using such methods. The alloy compositions described herein are specifically selected for the additive manufacturing methods and provide products that exhibit superior mechanical properties as compared to their cast counterparts. Using the compositions and methods described herein, products that do not exhibit substantial coarsening, such as at elevated temperatures, can be obtained. The products further exhibit uniform microstructures along the print axis, thus contributing to improved strength and performance. Additives also can be used in the alloys described herein.

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23-03-2017 дата публикации

CLAD ALUMINUM ALLOY MATERIAL WITH EXCELLENT CORROSION RESISTANCE AND BRAZEABILITY AND METHOD FOR PRODUCING THE SAME

Номер: US20170080528A1
Автор: Narita Wataru
Принадлежит: UACJ Corporation

A clad aluminum alloy material exhibiting favorable corrosion resistance and brazeability in an alkaline environment is shown by a clad aluminum alloy material with excellent brazeability and corrosion resistance in which one surface of an aluminum alloy core material is clad with a sacrificial anode material and the other surface is clad with brazing filler material. The core material includes an aluminum alloy of Si: 0.3-1.5%, Fe: 0.1-1.5%, Cu: 0.2-1.0%, Mn: 1.0-2.0%, and Si content+Fe content ≧0.8%, wherein the 1-20 μm equivalent circle diameter Al—Mn—Si—Fe-based intermetallic compound density is 3.0×10to 1.0×10pieces/cm, and the 0.1μm to less than 1μm equivalent circle diameter Al—Mn—Si—Fe-based intermetallic compound density is at least 1.0×10pieces/cm. The sacrificial anode material includes an aluminum alloy containing Si: 0.1-0.6%, Zn: 1.0-5.0%, and Ni: 0.1-2.0%. 1. A clad aluminum alloy material with excellent brazeability and corrosion resistance , comprising:an aluminum alloy core material,a sacrificial anode material clad on one surface of the core material andan Al—Si-based brazing filler metal clad on the other surface of the core material,{'sup': 5', '6', '2', '7', '2, 'wherein the core material comprises an aluminum alloy comprising Si: 0.3 to1.5 mass %, Fe: 0.1 to 1.5 mass %, Cu: 0.2 to 1.0 mass %, Mn: 1.0 to 2.0 mass % and a balance of Al and unavoidable impurities, the aluminum alloy satisfies the relation that Si content+Fe content ≧0.8 mass %, the 1-20 μm equivalent circle diameter Al—Mn—Si—Fe-based intermetallic compound density is 3.0×10to 1.0×10pieces/cm, and the 0.1 μm to less than 1 μm equivalent circle diameter Al—Mn—Si—Fe-based intermetallic compound density is at least 1.0×10pieces/cm, and'}the sacrificial anode material comprises an aluminum alloy comprising Si: 0.1 to 0.6 mass %, Zn: 1.0 to 5.0 mass %, Ni: 0.1 to 2.0 mass % and a balance of Al and unavoidable impurities.2. The clad aluminum alloy material with excellent brazeability ...

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22-03-2018 дата публикации

RARE EARTH MAGNET

Номер: US20180082772A1
Принадлежит: TDK Corporation

A rare earth magnet includes main phase grains having an RTB type crystal structure. The main phase grains include Ga. A concentration ratio A (A=αGa/βGa) of the main phase grains is 1.20 or more, where αGa and βGa are respectively a highest concentration of Ga and a lowest concentration of Ga in one main phase grain. 1. A rare earth magnet comprising main phase grains having an RTB type crystal structure ,whereinthe main phase grains comprise Ga, anda concentration ratio A (A=αGa/βGa) of the main phase grains is 1.20 or more, where αGa and βGa are respectively a highest concentration of Ga and a lowest concentration of Ga in one main phase grain.2. The rare earth magnet according to claim 1 , wherein the concentration ratio A is 1.50 or more.3. The rare earth magnet according to claim 1 , wherein a position showing βGa is located within 100 nm from an edge part of the main phase grain toward an inner part of the main phase grain.4. The rare earth magnet according to claim 1 ,whereinthe main phase grain comprises a concentration gradient of Ga increasing from an edge part of the main phase grain toward an inner part of the main phase grain, anda region with the concentration gradient of Ga has a length of 100 nm or more.5. The rare earth magnet according to claim 1 ,whereinthe main phase grain comprises a concentration gradient of Ga increasing from an edge part of the main phase grain toward an inner part of the main phase grain, anda region whose absolute value of the concentration gradient of Ga is 0.05 atom %/μm or more has a length of 100 nm or more.6. The rare earth magnet according to claim 2 , wherein a position showing βGa is located within 100 nm from an edge part of the main phase grain toward an inner part of the main phase grain.7. The rare earth magnet according to claim 2 ,whereinthe main phase grain comprises a concentration gradient of Ga increasing from an edge part of the main phase grain toward an inner part of the main phase grain, anda region ...

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31-03-2022 дата публикации

STABLE UNDERCOOLED METALLIC PARTICLES FOR ENGINEERING AT AMBIENT CONDITIONS

Номер: US20220098709A1
Автор: Tevis Ian, Thuo Martin
Принадлежит:

Undercooled liquid metallic core-shell particles, whose core is stable against solidification at ambient conditions, i.e. under near ambient temperature and pressure conditions, are used to join or repair metallic non-particulate components. The undercooled-shell particles in the form of nano-size or micro-size particles comprise an undercooled stable liquid metallic core encapsulated inside an outer shell, which can comprise an oxide or other stabilizer shell typically formed in-situ on the undercooled liquid metallic core. The shell is ruptured to release the liquid phase core material to join or repair a component(s). 1. A liquid metallic core-shell particle comprising:an undercooled liquid metallic core comprising a metal or alloy, the undercooled liquid metallic core having a melting point in the range of 62° C. to 250° C.; andan outer shell on the undercooled liquid metallic core, the outer shell comprising an inorganic or organic adlayer, wherein the inorganic or organic adlayer comprises acetate, phosphate, or a combination thereof;wherein the undercooled liquid metallic core is a liquid when the liquid metallic core-shell particle has a temperature that is less than the melting point of the liquid metal or alloy.2. The particle of claim 1 , wherein the undercooled liquid metallic core is a liquid when the liquid metallic core-shell particle has a temperature that is between room temperature and less than the melting point of the liquid metal or alloy.3. The particle of claim 1 , wherein the liquid metallic core-shell particle has a temperature that is less than the melting point of the liquid metal or alloy claim 1 , and wherein the undercooled liquid metallic core is a liquid.4. The particle of claim 1 , wherein the liquid metallic core-shell particle has a temperature that is greater than room temperature and less than the melting point of the liquid metal or alloy claim 1 , and wherein the undercooled liquid metallic core is a liquid.5. The particle of ...

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29-03-2018 дата публикации

SINTERED COMPACT TARGET AND METHOD OF PRODUCING SINTERED COMPACT

Номер: US20180085828A1
Принадлежит:

A sintered compact target containing an element(s) (A) and an element(s) (B) as defined below is provided. The sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μmof the target surface is 100 micropores or less. The element(s) (A) is one or more chalcogenide elements selected from S, Se, and Te, and the element(s) (B) is one or more Vb group elements selected from Bi, Sb, As, P, and N. The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles. 1. A sintered compact target comprising compositional constituents (A) and (B) , where (A) represents one or more chalcogenide elements selected from the group consisting of S , Se , and Te , and (B) represents one or more elements selected from the group consisting of Bi , Sb , As , P , and N , wherein the sintered compact target is free from pores having an average diameter of 1 μm or more , and the number of micropores having an average diameter of 0.1 to 1 μm existing in an area of 40000 μmof the target surface at random check is 100 micropores or less , and wherein the sintered compact target has a purity , excluding gas components , of 99.99% (4N) or higher , an oxygen content as a gas component of 2000 ppm or less , and an average crystal grain size of 50 μg or less.2. The sintered compact target according to claim 1 , wherein the sintered compact has an alloy system selected from the group consisting of Ge—Sb—Te claim 1 , Ag—In—Sb—Te claim 1 , and Ge—In—Sb—Te.3. The sintered compact target according to claim 1 , wherein the sintered compact target has a structure having a deflecting strength of 40 MPa or more claim 1 , a relative density of 99.8% or higher claim 1 , a standard deviation of less than 1% for the relative density claim 1 , and a variation in the ...

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29-03-2018 дата публикации

METHOD OF PRODUCING HIGH-PURITY ERBIUM

Номер: US20180087136A1
Автор: Takahata Masahiro
Принадлежит:

A method of purifying erbium is provided to produce a high-purity erbium having a purity of 5N or higher excluding rare earth elements and gas components, and containing Al, Fe, Cu, and Ta each in an amount of 1 wtppm or less, W in an amount of 10 wtppm or less, carbon in an amount of 150 wtppm or less, alkali metals and alkali earth metals each in an amount of 1 wtppm or less, other transition metal elements in a total amount of 10 wtppm or less, and U and Th as radioactive elements each in an amount of 10 wtppb or less. Erbium has a high vapor pressure and is difficult to refine in a molten state. The method provides technology for efficiently and stably providing high-purity erbium, a sputtering target made of high-purity erbium, and a metal gate film having high-purity erbium as a main component thereof. 1. A method of producing high-purity erbium , comprising the steps of:subjecting coarse erbium to molten salt electrolysis to produce an electrodeposit; andsubjecting the electrodeposit to distillation to obtain a high-purity erbium having a purity of 5N or higher, excluding rare earth elements and gas components, and containing Al, Fe, Cu, and Ta each in an amount of 1 wtppm or less, W in an amount of 10 wtppm or less, carbon in an amount of 150 wtppm or less, alkali metals and alkali earth metals each in an amount of 1 wtppm or less, other transition metal elements in a total amount of 10 wtppm or less, and U and Th as radioactive elements each in an amount of 10 wtppb or less.2. The method according to claim 1 , wherein a molten salt for the molten salt electrolysis is prepared using potassium chloride (KCl) claim 1 , lithium chloride (LiCl) claim 1 , erbium chloride (ErCl) and erbium (Er) raw materials claim 1 , and the molten salt electrolysis is performed at a bath temperature of 700° C. or higher and 900° C. or less.3. The method according to claim 2 , wherein tantalum (Ta) is used as an anode and tantalum (Ta) or titanium (Ti) is used as a cathode of the ...

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21-03-2019 дата публикации

MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME

Номер: US20190088280A1
Принадлежит:

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element. 1. A method of forming a near field transducer (NFT) layer , the method comprising:depositing a film of a primary element, the film having a film thickness and a film expanse; andimplanting at least one secondary element into the primary element,wherein the NFT layer comprises the film of the primary element doped with the at least one secondary element.2. The method according to claim 1 , wherein the at least one secondary element is implanted using beam line implanting claim 1 , or plasma immersion implanting.3. The method according to claim 1 , wherein the concentration of the at least one secondary element is not constant across the thickness of the film4. The method according to claim 1 , wherein the concentration of the at least one secondary element is not constant across the expanse of the film.5. The method according to claim 1 , wherein the at least one secondary element is implanted at more than one energy.6. The method according to further comprising annealing after implanting the at least one secondary element.7. The method according to further comprising depositing a metal or dielectric layer on the implanted film before annealing.8. The method according to further comprising implanting at least one secondary element after annealing.9. The method according to further comprising patterning the NFT layer into a NFT.10. The method according to further comprising depositing a metal or dielectric layer on the film of primary element before implanting the at least one secondary element.11. A method of forming a peg of a near field transducer (NFT) claim 1 , the method comprising:depositing a primary element to ...

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28-03-2019 дата публикации

Liquid Metal Ink

Номер: US20190092955A1
Принадлежит:

A method for forming a conductive trace on a substrate. A metallic liquid is mixed with a solvent to produce a metallic liquid mixture. The metallic liquid mixture is stimulated to produce a colloidal suspension of discrete metallic liquid particles surrounded by the solvent. The colloidal suspension is aerosolized with a carrier gas, and passed through a nozzle to deposit the discrete metallic liquid particles onto the substrate. The deposited discrete metallic liquid particles are annealed, thereby producing the conductive trace. The conductive trace has a substantially contiguous core of the metallic liquid within a substantially non-electrically conductive solid skin that substantially bounds the liquid core. 1. A method for forming a conductive trace on a substrate , the method comprising the steps of:combining a metallic liquid with a solvent to produce a metallic liquid mixture,stimulating the metallic liquid mixture to produce a colloidal suspension of discrete metallic liquid particles surrounded by the solvent,aerosolizing colloidal suspension with a carrier gas, andpassing the aerosolized colloidal suspension through a nozzle to deposit the discrete metallic liquid particles onto the substrate, andannealing the deposited discrete metallic liquid particles,thereby producing the conductive trace, where the conductive trace has a substantially contiguous core of the metallic liquid within a substantially non-electrically conductive solid skin that substantially bounds the liquid core.2. The method of claim 1 , wherein the metallic liquid comprises gallium.3. The method of claim 1 , wherein the metallic liquid comprises an alloy of gallium and indium.4. The method of claim 1 , further comprising annealing the conductive trace within a desired temperature range claim 1 , a desired time range claim 1 , and a desired pressure range.5. The method of claim 1 , wherein stimulating the metallic liquid mixture comprises ultrasonic vibration of the mixture.6. The ...

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14-04-2016 дата публикации

Braze materials and method for joining of ceramic matrix composites

Номер: US20160102576A1

A gas turbine engine includes at least two components. The first component is coupled to the second component by a melt alloy.

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12-05-2022 дата публикации

Method for Manufacturing Rare Earth Sintered Magnet

Номер: US20220148801A1
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A rare earth sintered magnet is manufactured by preparing a R-T-X sintered body having a major phase of RTX composition wherein Ris a rare earth element(s) and essentially contains Pr and/or Nd, T is Fe, Co, Al, Ga, and/or Cu, and essentially contains Fe, and X is boron and/or carbon, forming an alloy powder containing 5≤R≤60, 5≤M≤70, and 20 Подробнее

28-03-2019 дата публикации

METHOD FOR PRODUCING SINTERED R-T-B BASED MAGNET AND DIFFUSION SOURCE

Номер: US20190096575A1
Автор: Kuniyoshi Futoshi
Принадлежит:

A method for producing a sintered R-T-B based magnet includes the steps of: providing a sintered R1-T-B based magnet work (where R1 is a rare-earth element; T is Fe, or Fe and Co); providing a powder of an alloy in which a rare-earth element R2 accounts for 40 mass % or more of the entire alloy, the rare-earth element R2 always including Dy and/or Tb; subjecting the powder to a heat treatment to obtain a diffusion source; and heating the sintered R1-T-B based magnet work with the diffusion source to allow the at least one of Dy and Tb contained in the diffusion source to diffuse from the surface into the interior of the sintered R1-T-B based magnet work. The alloy powder is a powder produced by atomization. 1. A method for producing a sintered R-T-B based magnet , comprising:providing a sintered R1-T-B based magnet work (where R1 is a rare-earth element; T is Fe, or Fe and Co);providing a powder of an alloy in which a rare-earth element R2 accounts for 40 mass % or more of the entire alloy, the rare-earth element R2 always including at least one of Dy and Tb;subjecting the alloy powder to a heat treatment at a temperature which is not lower than a temperature that is 250° C. below a melting point of the alloy powder and which is not higher than the melting point, to obtain a diffusion source from the alloy powder; andplacing the sintered R1-T-B based magnet work and the diffusion source in a process chamber, and heating the sintered R1-T-B based magnet work and the diffusion source to a temperature which is not higher than a sintering temperature of the sintered R1-T-B based magnet work, to allow the at least one of Dy and Tb contained in the diffusion source to diffuse from the surface into an interior of the sintered R1-T-B based magnet work, whereinthe alloy powder is a powder produced by atomization.2. The method for producing a sintered R-T-B based magnet of claim 1 , wherein an oxygen content in the diffusion source is not less than 0.5 mass % and not more ...

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12-05-2022 дата публикации

SILICIDE ALLOY MATERIAL AND THERMOELECTRIC CONVERSION DEVICE IN WHICH SAME IS USED

Номер: US20220149258A1
Принадлежит: TOSOH CORPORATION

Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained. 1. A silicide-based alloy material comprising silicon and ruthenium as main components , [{'br': None, '45 atm %≤Si/(Ru+Si)≤70 atm %'}, {'br': None, '30 atm %≤Ru/(Ru+Si)≤55 atm %'}], 'wherein when contents of silicon and ruthenium are denoted by Si and Ru, respectively, an atomic ratio of devices constituting the alloy material satisfies the following2. The silicide-based alloy material according to claim 1 , wherein an average crystal grain size of the silicide-based alloy material is 50 μm or less.3. The silicide-based alloy material according to claim 2 , wherein the average crystal grain size of the silicide-based alloy material is 1 nm to 20 μm.4. The silicide-based alloy material according to claim 3 , wherein the average crystal grain size of the silicide-based alloy material is 3 nm to 1 μm.5. The silicide-based alloy material according to claim 4 , wherein the average crystal grain size of the silicide-based alloy material is 5 nm to 500 nm.6. The silicide-based alloy material according to claim 1 , wherein the silicide-based alloy material has a plurality of crystal phases in a texture.7. The silicide-based alloy material according to claim 1 , wherein the contents of silicon and ruthenium satisfy the following:{'br': None, '55 atm %≤Si/(Ru+Si)≤65 atm %'}{'br': None, '35 atm %≤Ru/(Ru+Si)≤45 atm %.'}8. The silicide-based alloy material according to claim 1 , wherein the silicide-based alloy material has at least two or more kinds of crystal phases selected from space groups 198 claim 1 , 64 claim 1 , and 60 in the texture.9. The silicide-based alloy material according to claim 1 , wherein the contents of silicon and ruthenium satisfy the following:{'br': None, '47 atm %≤Si/(Ru+Si)≤60 atm %'}{'br': None, '40 atm %≤Ru/(Ru+Si)≤53 atm %.'}10. The silicide-based alloy material according to claim 1 , wherein the ...

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14-04-2016 дата публикации

METHOD FOR MANUFACTURING PERMANENT MAGNET

Номер: US20160104573A1
Принадлежит:

Provided is a method for manufacturing an Nd—Fe—B-based permanent magnet having an improved coercive force while reducing the amount of Dy used. A method for manufacturing a permanent magnet according to an embodiment of the present invention may comprise the steps of: preparing powder including Nd, Fe, B, and Cu; preparing a shaped body by forming a specific magnetic field in the powder; sintering the shaped body at a specific sintering temperature; and subjecting the sintered, shaped body to annealing at a annealing temperature determined according to the content of Cu. 1. A method for manufacturing a permanent magnet , which comprises: preparing powder including Nd , Fe , B and Cu; preparing a shaped body by forming a specific magnetic field in the powder; sintering the shaped body at a specific sintering temperature; and subjecting the sintered , shaped body to annealing at an annealing temperature determined according to the Cu content.2. The method for manufacturing a permanent magnet of claim 1 , wherein the annealing step comprises a plurality of annealings claim 1 , and the annealing temperature determined according to the content of Cu is a first annealing of the plurality of annealings.3. The method for manufacturing a permanent magnet of claim 1 , wherein the content of Cu is 0.01 to 0.8 weight ratio to the powder.4. The method for manufacturing a permanent magnet of claim 3 , wherein the annealing temperature determined by the content of Cu is reduced as the content of Cu is increasing.5. The method for manufacturing a permanent magnet of claim 1 , wherein the specific sintering temperature is determined according to the content of Cu. This application is a continuation of International Application No. PCT/KR2014/004647, filed on May 23, 2014, which claims priority to Korean Patent Application No. 10-2013-0069517, filed on Jun. 18, 2013 and No. 10-2014-0030533, filed on Mar. 14, 2014. The applications are hereby incorporated by reference.1. Field of the ...

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12-04-2018 дата публикации

STABLE NANOCRYSTALLINE ORDERING ALLOY SYSTEMS AND METHODS OF IDENTIFYING SAME

Номер: US20180100817A1
Принадлежит: Massachusetts Institute of Technology

Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase. 144-. (canceled)45. An alloy comprising:a mixture of a solute element and a solvent element, the mixture having a phase including at least one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase,the phase having a first thermodynamic parameter associated with grain boundary segregation of the alloy system, a second thermodynamic parameter associated with phase separation of the alloy system, and a third thermodynamic parameter associated with intermetallic compound formation of the alloy system,wherein the phase is stable when the first thermodynamic parameter, the second thermodynamic parameter, and the third thermodynamic parameter are within a predetermined region of a stability map of the alloy.46. The alloy of claim 45 , wherein an enthalpy of mixing is negative.47. The alloy of claim 45 , wherein the alloy includes an intermetallic compound.48. The alloy of claim 45 , wherein the alloy is an ordered binary alloy comprising at least one of Ag—Sc claim 45 , Ag—La claim 45 , Ag—Y claim 45 , Ba—Pd claim 45 , Ba—Pt claim 45 , Be— ...

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13-04-2017 дата публикации

Molten metal temperature control method

Номер: US20170102185A1
Автор: Daisuke Sakuma
Принадлежит: Toyota Motor Corp

A molten metal temperature control method includes: with respect to relations among a spheroidization distance traveled by a molten metal of an alloy from a nozzle tip to a position where the molten metal turns into droplets, the temperature of the molten metal inside the crucible, and a pressure acting on the molten metal inside the crucible, obtaining a relation between the temperature and the spheroidization distance at a predetermined pressure, and setting a predetermined temperature range of the temperature; measuring a spheroidization distance when discharging the molten metal from the crucible at the predetermined pressure, and specifying a temperature corresponding to the measured spheroidization distance; and comparing the specified temperature and the predetermined temperature range, and when the specified temperature is outside the predetermined temperature range, controlling the specified temperature so as to be within the predetermined temperature range by adjusting the temperature inside the crucible.

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13-04-2017 дата публикации

R-T-B BASED SINTERED MAGNET

Номер: US20170103835A1
Принадлежит: TDK Corporation

An R-T-B based sintered magnet includes “R”, “T”, and “B”. “R” represents a rare earth element including at least Tb. “T” represents a metal element except rare earth elements including at least Fe, Cu, Mn, Al, and Co. “B” represents boron or boron and carbon. With respect to 100 mass % of a total mass of the R-T-B based sintered magnet, a content of “R” is 28.0 to 32.0 mass %, a content of Cu is 0.04 to 0.50 mass %, a content of Mn is 0.02 to 0.10 mass %, a content of Al is 0.15 to 0.30 mass %, a content of Co is 0.50 to 3.0 mass %, and a content of “B” is 0.85 to 1.0 mass %. Tb2/Tb1 is 0.40 to less than 1.0, where Tb1 and Tb2 (mass %) denote a content of Tb at a surface portion and at a core portion, respectively. 1. An R-T-B based sintered magnet comprising “R” , “T” , and “B” , wherein“R” represents a rare earth element including at least Tb,“T” represents a metal element other than rare earth elements including at least Fe, Cu, Mn, Al, and Co,“B” represents boron or boron and carbon,a content of “R” is 28.0 to 32.0 mass % with respect to 100 mass % of a total mass of the R-T-B based sintered magnet,a content of Cu is 0.04 to 0.50 mass % with respect to 100 mass % of a total mass of the R-T-B based sintered magnet,a content of Mn is 0.02 to 0.10 mass % with respect to 100 mass % of a total mass of the R-T-B based sintered magnet,a content of Al is 0.15 to 0.30 mass % with respect to 100 mass % of a total mass of the R-T-B based sintered magnet,a content of Co is 0.50 to 3.0 mass % with respect to 100 mass % of a total mass of the R-T-B based sintered magnet,a content of “B” is 0.85 to 1.0 mass % with respect to 100 mass % of a total mass of the R-T-B based sintered magnet, andTb2/Tb1 is 0.40 or more and less than 1.0, where Tb1 (mass %) denotes a content of Tb at a surface portion of the R-T-B based sintered magnet, and Tb2 (mass %) denotes a content of Tb at a core portion of the R-T-B based sintered magnet.2. The R-T-B based sintered magnet according to claim ...

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02-04-2020 дата публикации

METHOD FOR NANO POWDER LOADING INTO MICRO-CAPILLARY MOLD

Номер: US20200101532A1
Принадлежит:

A method loading powder into a mold can include immersing the mold comprising one or more microchannels into a suspension comprising the powder and a surfactant suspended in a dispersant, wherein the powder comprises particles having an average particle size of less than 100 μm, wherein the mold is substantially entirely covered by the suspension; heating the suspension having the mold immersed therein under a temperature condition suitable to lower the stability of the particles of the powder in the suspension such that the particles settle out of solution and into the one or more microchannels; and applying an ultrasonic wave to the heated suspension to further settle the particles of the powder into the one or more microchannels thereby filling the one or more microchannels of the mold with the powder. 1. A method loading powder into a mold , comprising:immersing the mold comprising one or more microchannels into a suspension comprising the powder and a surfactant suspended in a dispersant, wherein the powder comprises particles having an average particle size of less than 100 μm, wherein the mold is substantially entirely covered by the suspension;heating the suspension having the mold immersed therein under a temperature condition suitable to lower the stability of the particles of the powder in the suspension such that the particles settle out of solution and into the one or more microchannels; andapplying an ultrasonic wave to the heated suspension to further settle the particles of the powder into the one or more microchannels thereby filling the one or more microchannels of the mold with the powder.2. The method of claim 1 , wherein the ultrasonic wave has a vibration frequency in a range of 5 KHz to 5 MHz.3. The method of claim 1 , wherein the suspension is heated to a temperature of about 50° C. to about 150° C.4. The method of claim 1 , wherein the one or more microchannels has a width or diameter of about 1 μm to about 50 μm.5. The method of claim 1 , ...

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20-04-2017 дата публикации

PLATED STEEL SHEET

Номер: US20170107625A1

A plated steel sheet () includes: a steel sheet (); a pre-plating layer () on at least one surface of the steel sheet (), the pre-plating layer () containing Al, Cu, In, Zn, Sn, or Sb, or any combination thereof; and a plating layer () of a Zn—Ni alloy on the pre-plating layer (), a Ni content of the Zn—Ni alloy being 5 mass % to 15 mass %. A coating weight of the pre-plating layer () is 0.5 g/mor more, and a coating weight of the plating layer () is 5 g/mor more. 1. A plated steel sheet , comprising:a steel sheet;a pre-plating layer on at least one surface of the steel sheet, the pre-plating layer containing Al, Cu, In, Zn, Sn, or Sb, or any combination thereof; anda plating layer of a Zn—Ni alloy on the pre-plating layer, a Ni content of the Zn—Ni alloy being 5 mass % to 15 mass %, wherein{'sup': '2', 'a coating weight of the pre-plating layer is 0.5 g/mor more, and'}{'sup': '2', 'a coating weight of the plating layer is 5 g/mor more.'}2. The plated steel sheet according to claim 1 , further comprising a chromate-free film of 10 mg/mor more on the plating layer.3. The plated steel sheet according to claim 2 , wherein the chromate-free film contains a fluoro compound of hexafluorotitanic acid or hexafluorozirconic acid or both of them claim 2 , phosphoric acid claim 2 , and a vanadium compound.4. The plated steel sheet according to claim 2 , wherein the chromate-free film is formed by using a treatment solution containing a salt of Zr or Ti or both of them claim 2 , or a treatment solution containing a silane coupling agent.5. The plated steel sheet according to claim 4 , wherein the treatment solution containing the silane coupling agent contains a first silane coupling agent containing a single amino group in a molecule and a second silane coupling agent containing a single glycidyl group in a molecule. The present invention relates to a plated steel sheet provided with a Zn—Ni alloy plating layer.A steel sheet used for fuel tanks of an automobile, a motorcycle, ...

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26-04-2018 дата публикации

Rare earth magnet

Номер: US20180114616A1
Принадлежит: TDK Corp

A rare earth magnet includes main phase grains having an R 2 T 14 B type crystal structure. The main phase grains include B. A concentration ratio A (A=αB/βB) of the main phase grains is 1.05 or more, where αB and βB are respectively a highest concentration of B and a lowest concentration of B in one main phase grain.

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07-05-2015 дата публикации

INK COMPOSITION FOR MANUFACTURING LIGHT ABSORPTION LAYER INCLUDING METAL NANO PARTICLES AND METHOD OF MANUFACTURING THIN FILM USING THE SAME

Номер: US20150122335A1
Принадлежит:

Disclosed are an ink composition for manufacturing a light absorption layer including metal nano particles and a method of manufacturing a thin film using the same, more particularly, an ink composition for manufacturing a light absorption layer including copper (Cu)-enriched Cu—In bimetallic metal nano particles and Group IIIA metal particles including S or Se dispersed in a solvent and a method of manufacturing a thin film using the same. 1. An ink composition for manufacturing a light absorption layer comprising copper (Cu)-enriched Cu—In bimetallic metal nano particles and Group IIIA metal particles comprising S or Se dispersed in a solvent.2. The ink composition according to claim 1 , wherein the copper (Cu)-enriched Cu—In bimetallic metal nano particles are at least one selected from the group consisting of Cu11In9 claim 1 , Cu16In4 claim 1 , Cu2In claim 1 , Cu7In3 claim 1 , and Cu4In.3. The ink composition according to claim 2 , wherein the copper (Cu)-enriched Cu—In bimetallic metal nano particles are Cu2In.4. The ink composition according to claim 1 , wherein the Group IIIA metal particles comprising S or Se are represented by Formula 1 below:{'br': None, 'i': x', 'm', 'y', 'n, '(InxGa1−)(SySe1−)\u2003\u2003(1)'}wherein 0≦x≦1, 0≦y≦1 and 0<(n/m)≦10.5. The ink composition according to claim 4 , wherein a ratio of an amount of S and Se to an amount of In and Ga (n/m) in Formula 1 is 0.5<(n/m)≦3.6. The ink composition according to claim 4 , wherein the Group IIIA metal particles comprising S or Se are at least one compound selected from the group consisting of InS claim 4 , InSe claim 4 , In4S3 claim 4 , In4Se3 claim 4 , In2S3 claim 4 , In2Se3 claim 4 , GaS claim 4 , GaSe claim 4 , Ga2S3 claim 4 , Ga2Se3 claim 4 , (In claim 4 ,Ga)S claim 4 , (In claim 4 ,Ga)Se claim 4 , (In claim 4 ,Ga)2Se3 claim 4 , and (In claim 4 ,Ga)2S3.7. The ink composition according to claim 1 , wherein the copper (Cu)-enriched Cu—In bimetallic metal nano particles and Group IIIA metal ...

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26-04-2018 дата публикации

Hydrogen storage alloy, negative electrode using hydrogen storage alloy, and nickel-hydrogen secondary battery using negative electrode

Номер: US20180114981A1
Принадлежит: FDK Corp

A nickel-hydrogen secondary battery includes an electrode group that includes a separator, a positive electrode and a negative electrode, and the negative electrode contains a hydrogen storage alloy having a crystal structure in which an AB 2 type unit and an AB 5 type unit are laminated, in which a PCT characteristic diagram at 80° C. includes a first plateau region having a hydrogen pressure Pd1 when hydrogen is stored by 0.25 times an effective hydrogen storage amount that is a hydrogen storage amount when a hydrogen pressure is 1 MPa, and a second plateau region having a hydrogen pressure Pd2 when hydrogen is stored by 0.70 times the effective hydrogen storage amount, and Pd1 and Pd2 satisfy a relation of 0.6≤log 10 (Pd2/Pd1).

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17-07-2014 дата публикации

HIGH-PURITY LANTHANUM, METHOD FOR PRODUCING SAME, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT

Номер: US20140199203A1
Принадлежит: JX NIPPON MINING & METALS CORPORATION

A high-purity lanthanum, characterized by having a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cmor less. A method for producing the high-purity lanthanum characterized by obtaining lanthanum crystal by subjecting a crude lanthanum metal raw material having a purity of 4N or less excluding the gas component to molten salt electrolysis at a bath temperature of 450 to 700° C., subjecting the lanthanum crystal to de-salting treatment, and removing volatile substances by performing electron beam melting, wherein the high-purity lanthanum has a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cmor less. The object of the present invention is providing a technique capable of efficiently and stably providing a high-purity lanthanum with low α-ray, a sputtering target made from the high-purity lanthanum, and a metal gate thin film having the high-purity lanthanum as the main component. 1. A high-purity lanthanum , characterized by having a purity of 5N or more excluding rare earth elements and gas components , and α-ray count number of 0.001 cph/cmor less.2. The high-purity lanthanum according to claim 1 , characterized by having Pb content of 0.1 wtppm or less claim 1 , Bi content of 0.01 wtppm or less claim 1 , Th content of 0.001 wtppm or less claim 1 , and U content of 0.001 wtppm or less.3. The high-purity lanthanum according to claim 2 , characterized by having Al claim 2 , Fe claim 2 , Cu contents of 1 wtppm or less claim 2 , respectively.4. The high-purity lanthanum according to claim 3 , characterized by having a total content of W claim 3 , Mo and Ta of 10 wtppm or less.5. A sputtering target comprising the high-purity lanthanum according to .6. A metal gate film formed from the sputtering target according to .7. A semi-conductor element or device equipped with the metal gate film according to .8. A method for producing high-purity lanthanum ...

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05-05-2016 дата публикации

REACTIVE POWDER, BONDING MATERIAL USING REACTIVE POWDER, BONDED BODY BONDED WITH BONDING MATERIAL AND METHOD FOR PRODUCING BONDED BODY

Номер: US20160121395A1
Принадлежит: Hitachi, Ltd.

There is provided a reactive powder enabling a satisfactory and stable self-propagating high temperature synthesis (SHS) reaction. Also, there is provided a bonding material enabling reliable bonding, by using the reactive powder, while inhibiting thermal degradation of a joint member without depending on a surface shape to be bonded of the joint member. The reactive powder is a reactive powder enabling self-propagating high temperature synthesis including a first material and a second material that chemically react with each other, in which each grain constituting the reactive powder is in a state that first sub-grains made of the first material and second sub-grains made of the second material are disorderly mixed within the grain. 1. A reactive powder enabling self-propagating high temperature synthesis , comprising: a first material and a second material that chemically react with each other ,wherein each grain constituting the reactive powder is in a state that first sub-grains made of the first material and second sub-grains made of the second material are disorderly mixed within the grain.2. The reactive powder according to claim 1 , wherein:the first sub-grain and the second sub-grain each has a scaly shape and an average thickness of the scaly shape is 10 nm or more and 1 μm or less.3. The reactive powder according to claim 1 , wherein:the reactive powder has an average grain size of 3 μm or more and 40 μm or less.4. The reactive powder according to claim 1 , wherein:the reactive powder is obtained by intermixing and grinding powder of the first material and powder of the second material.5. A bonding material to bond two or more members to be bonded claim 1 , comprising: the reactive powder according to ; andan easy-flowing material fluidized at a temperature lower than a melting point of the members to be bonded.6. The bonding material according to claim 5 , wherein:the reactive powder and powder of the easy-flowing material are intermixed within the ...

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07-05-2015 дата публикации

STABLE BINARY NANOCRYSTALLINE ALLOYS AND METHODS OF IDENTIFYING SAME

Номер: US20150125338A1
Принадлежит:

Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase. 1. A method of identifying a stable phase of a binary alloy comprising a solute element and a solvent element , the method comprising:(A) determining at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy; and(B) identifying the stable phase of the binary alloy based on the first thermodynamic parameter and the second thermodynamic parameter by comparing the first thermodynamic parameter and the second thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase;wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.2. The method of claim 1 , wherein (A) further comprises at least one of:calculating an enthalpy of mixing of the binary alloy as a first thermodynamic parameter,calculating an enthalpy of segregation of the binary alloy as a second thermodynamic parameter, anddetermining a third thermodynamic parameter that is a free energy of mixing as a function of at least one of (i) concentration of grain boundary in the binary alloy, (ii) grain size of the binary alloy, (iii) concentration of the solute element in the binary alloy, and (iv) concentration of the solvent element in the binary alloy.3. (canceled)4. (canceled)5. The method of claim 1 , wherein the binary alloy has a positive enthalpy of mixing claim 1 , and at least one of the at least two thermodynamic parameters is ...

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18-04-2019 дата публикации

MAGNET STRUCTURE

Номер: US20190115125A1
Принадлежит: TDK Corporation

The present invention provides a magnet structure comprising a first magnet, a second magnet, and an intermediate layer joining the first magnet and the second magnet. In the magnet structure, each of the first magnet and the second magnet is a permanent magnet comprising a rare earth element R, a transition metal element T, and boron B. In addition, the rare earth element R comprises: a light rare earth element Rcomprising at least Nd; and a heavy rare earth element R, and the transition metal element T comprises Fe, Co, and Cu. Further, the intermediate layer comprises: an Roxide phase comprising an oxide of the light rare earth element R; and an R—Co—Cu phase comprising the light rare element R, Co, and Cu. 1. A magnet structure comprising:a first magnet;a second magnet; andan intermediate layer joining the first magnet and the second magnet; whereineach of the first magnet and the second magnet is a permanent magnet comprising: a rare earth element R; a transition metal element T; and boron B,{'sub': L', 'H, 'the rare earth element R comprises: a light rare earth element Rcomprising at least Nd; and a heavy rare earth element R,'}the transition metal element T comprises Fe, Co, and Cu, and [{'sub': L', 'L, 'an Roxide phase comprising an oxide of the light rare earth element R; and'}, {'sub': L', 'L, 'an R—Co—Cu phase comprising the light rare earth element R, Co, and Cu.'}], 'the intermediate layer comprises2. The magnet structure according to claim 1 , wherein the intermediate layer further comprises an Rrich phase.3. The magnet structure according to claim 1 , wherein{'sub': L', 'L', 'L, 'concentrations of the R, of Co, and of Cu in the R—Co—Cu phase are higher than concentrations of the R, of Co, and of Cu respectively in the magnet.'}4. The magnet structure according to claim 1 , wherein each of the first magnet and the second magnet has a region where a concentration of the heavy rare earth element in the magnet becomes lower as a distance from the ...

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18-04-2019 дата публикации

ELECTRICAL CONNECTOR HAVING CONTACTS PLATED WITH TWO DIFFERENT MATERIALS

Номер: US20190115678A1
Автор: ZHANG CAI-YUN, Zhao Jun
Принадлежит:

An electrical connector includes: an insulative housing; and a row of contacts secured to the insulative housing, the row of contacts including one or more power contacts and one or more signal and/or ground contacts, wherein the one or more power contacts are plated with a first material and the one or more signal and/or ground contacts are plated with a second material different from the first material. A related method of manufacturing such connector includes separate plating of the row of power contacts from the row of signal and ground contacts with a different material. 1. An electrical connector comprising:an insulative housing; anda row of contacts secured to the insulative housing, the row of contacts including one or more power contacts and one or more signal and/or ground contacts, whereinthe one or more power contacts are plated with a first material and the one or more signal and/or ground contacts are plated with a second material different from the first material.2. The electrical connector as claimed in claim 1 , wherein the first material contains rhodium claim 1 , ruthenium claim 1 , or rhodium ruthenium.3. The electrical connector as claimed in claim 1 , wherein the row of contacts comprises two pairs of power contacts claim 1 , three pairs of signal contacts interposed by the two pairs of power contacts claim 1 , and two outermost ground contacts.4. The electrical connector as claimed in claim 1 , wherein both the one or more power contacts and the one of more signal and/or ground contacts are integrally formed with the housing via an insert-molding process.5. The electrical connector as claimed in claim 4 , wherein the more power contacts are originally unitarily extend between a front carrier portion and a rear carrier portion at two opposite ends of the more power contacts in a front-to-back direction claim 4 , and the more signal and/or ground contacts are originally unitarily extend between another front carrier portion and another rear ...

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05-05-2016 дата публикации

Sputtering Target And Method For Production Thereof

Номер: US20160126072A1
Автор: Endo Yousuke
Принадлежит: JX NIPPON MINING & METALS CORPORATION

A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 μm or less. 1. A sputtering target comprising:5 wtppm to 10,000 wtppm of Cu; andthe balance of In,the sputtering target having a relative density of at least 99%, an average grain size of at most 3,000 μm and an oxygen concentration of at most 20 wtpmm.2. The sputtering target according to claim 1 , wherein the average grain size is from 10 μm to 1 claim 1 ,000 μm.3. The sputtering target according to claim 2 , wherein the average grain size is from 10 μm to 500 μm.4. The sputtering target according to claim 3 , wherein the average grain size is from 10 μm to 300 μm.5. (canceled)6. The sputtering target according to claim 1 , further comprising at most 100 wtppm of at least one selected from S claim 1 , Cd claim 1 , Zn claim 1 , Se claim 1 , Mg claim 1 , Ca claim 1 , and Sn.7. The sputtering target according to claim 1 , which has a cylindrical shape.8. A method for producing a sputtering target claim 1 , the method comprising:forming a sputtering target raw material in such a manner that the sputtering target raw material is bonded to a surface of a supporting substrate, wherein the sputtering target raw material comprises 5 wtppm to 10,000 wtppm of Cu and the balance of In; andthen subjecting the sputtering target raw material to plastic working in a thickness direction of the sputtering target raw material at a thickness reduction rate in the range of 10% to 80%.9. The method for producing a sputtering target according to claim 8 , wherein the sputtering target raw material further comprises at most 100 wtppm claim 8 , in total claim 8 , of at least one selected from S claim 8 , Cd claim 8 , Zn claim 8 , Se claim 8 , Mg claim 8 , Ca claim 8 , and Sn.10. The method for producing a sputtering target according to claim 8 , wherein the supporting substrate is a cylindrical backing ...

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25-08-2022 дата публикации

Kinetic Model for Molecular Beam Epitaxy Growth of III-V Bismide Alloys

Номер: US20220267924A1

The invention relates in part to a growth model for the growth of Group III-Group V (III-V) alloys by molecular beam epitaxy (MBE) based on the kinetics of adsorption, desorption, incorporation, anion exchange, anion-assisted removal, and surface droplet accumulation of the Group V elements. The invention also relates to methods to optimize MBE growth conditions used to produce a target III-V alloy composition. The invention is further related to methods of predicting III-V alloy compositions resulting from a set of MBE growth conditions. 2. The method of claim 1 , wherein the step of obtaining estimates of the model parameters in the obtaining step comprises performing MBE growths of the InAsSbBi alloys using operator controllable inputs claim 1 , and measuring droplet accumulation rate claim 1 , θR claim 1 , for each growth that exhibits surface droplet formation of Bi.3. The method of claim 1 , wherein the step of obtaining estimates of the model parameters in the obtaining step comprises performing MBE growths of InAsSbBi alloys using operator controllable inputs claim 1 , and performing experimental determination of alloy lattice constants and band gap energies for each growth.4. The method of wherein the step of performing the experimental determination of alloy lattice constants for each growth is ascertained claim 3 , at least for some portion of the As claim 3 , Sb and Bi elements claim 3 , from X-ray diffraction measurements.5. The method of wherein the step of performing the experimental determination of band gap energies for each growth is ascertained claim 3 , at least for some portion of the As claim 3 , Sb and Bi elements claim 3 , from steady state photoluminescence spectroscopy measurements.6. The method of claim 1 , wherein the step of performing the experimental determination of measured droplet accumulation rate claim 1 , θR claim 1 , for each growth is ascertained claim 1 , at least for some portion of As claim 1 , Sb and Bi claim 1 , from X-ray ...

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04-05-2017 дата публикации

Generation of a Splice Between Superconductor Materials

Номер: US20170125924A1
Принадлежит:

Technologies are described for methods and systems to generate a splice between a first and a second piece of conductor material. The methods may comprise identifying a first overlap area for the first piece on a first conductive surface. The first piece may include the first conductive surface and a first non-conductive surface. The methods may comprise identifying a second overlap area for the second piece on a second conductive surface. The second piece may include the second conductive surface and a second non-conductive surface. The methods may comprise pre-tinning the first and second overlap areas with solder to produce first and second pre-tinned areas. The methods may comprise stacking the first and second pieces so that the first and second pre-tinned areas are in contact and applying heat to the first non-conductive surface sufficient to melt the solder and generate the splice between the first and second pieces. 1. A method for generating a splice between a first and a second piece of conductor material , the method comprising:identifying a first overlap area for the first piece, where the first piece includes a first layer including a rare earth barium copper oxide, the first piece includes a first conductive surface that is part of a first conductive path to the rare earth barium copper oxide in the first piece, and the first piece includes a first non-conductive surface opposite the first conductive surface, where the first non-conductive surface does not provide the first conductive path to the rare earth barium copper oxide in the first piece, and the first overlap area is on the first conductive surface;identifying a second overlap area for the second piece, where the second piece includes a second layer including the rare earth barium copper oxide, the second piece includes a second conductive surface that is part of a second conductive path to the rare earth barium copper oxide in the second piece, and the second piece includes a second non- ...

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25-08-2022 дата публикации

GRAIN BOUNDARY ENGINEERING

Номер: US20220270819A1
Принадлежит:

This disclosure is directed to sintered bodies comprising grains and a grain boundary composition, wherein: (a) the grains comprise a composition substantially represented by a formula GMB, where G is Nd, Dy, Pr, Tb, or a combination thereof, and M is Co, Fe, Ni, or a combination thereof, wherein the grains are optionally doped with one or more rare earth elements; and (b) the grain boundary composition is an alloy composition substantially represented by the formula: NdDyCoCuFe, wherein the subscript values are atom percent relative to the total composition of the the alloy composition. Corresponding populations of particles are also disclosed 118-. (canceled)19. A method of making a homogeneous powder , comprising:pulverizing cast alloy flakes that include a plurality of 2:14:1 phase grains to form a first powder;sintering a first compact comprising the first powder to create a sintered compact;fragmenting the sintered compact to form a second powder while maintaining at least some of the 2:14:1 phase grains from the sintered compact;mixing the second powder with a) a rare earth material R and b) an elemental additive A to produce a homogeneous powder while maintaining at least some of the 2:14:1 phase grains from the second powder;wherein the rare earth material R includes at least one, at least two, or all three of: i) Nd, ii) Pr, or iii) Dy, and the elemental additive A includes at least one, at least two, or all three of: i) Co, ii) Cu, or iii) Fe.20. The method of claim 19 , further comprising:melting magnetic elements to create a molten alloy; andforming, from the molten alloy, the cast alloy flakes that include the plurality of 2:14:1 phase grains.21. The method of claim 19 , further comprising:pressing and aligning particles in the first powder to create the first compact.22. The method of claim 19 , further comprising:sintering and magnetizing the homogeneous powder.23. The method of claim 19 , wherein the 2:14:1 phase grains comprise Nd—Fe—B 2:14:1 phase ...

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16-04-2020 дата публикации

Method for producing active material, active material and battery

Номер: US20200119352A1
Принадлежит: Toyota Motor Corp

A main object of the present disclosure is to provide a novel active material of which volume change due to charge and discharge is small. The present disclosure achieves the object by providing a method for producing an active material having a composition represented by NaxMySi46 (M is a metal element other than Na, x and y satisfy 0<x, 0≤y, y≤x, and 0<x+y<8), and a silicon clathrate I type crystal phase, the method comprising: a preparing step of preparing a precursor compound having the silicon clathrate I type crystal phase; and a liquid treatment step of bringing the precursor compound into contact with a polar liquid so as to desorb a Na element from the precursor compound and obtain the active material.

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23-04-2020 дата публикации

LEAD FREE SOLDER COMPOSITION WITH HIGH DUCTILITY

Номер: US20200122278A1
Автор: HUANG Suixiang
Принадлежит:

A lead free solder composition is disclosed and includes: 0.02% to 6% by weight stibium, 0.03% to 3% by weight copper, 0.03% to 8% by weight bismuth, 55% to 68% by weight indium, 0.3% to 8% by weight silver, 5% to 11% by weight magnesium, 0.3% to 1.45% by weight scandium, 0.6% to 1.8% by weight cerium, and 10% to 45% by weight tin. The lead free solder composition of the invention has a solidus temperature no lower than 120° C., has good ductility and stability, and hence is suitable for soldering electrical connectors onto the metalized surface on the glass. 1. A lead free solder composition , comprising:0.02% to 6% by weight stibium,0.03% to 3% by weight copper,0.03% to 8% by weight bismuth,55% to 68% by weight indium,0.3% to 8% by weight silver,5% to 11% by weight magnesium,0.3% to 1.45% by weight scandium,0.6% to 1.8% by weight cerium, and10% to 45% by weight tin.2. The lead free solder composition of claim 1 , comprising 1.0% to 1.1% by weight scandium.3. The lead free solder composition of claim 1 , comprising 0.7% to 0.8% by weight cerium.4. The lead free solder composition of claim 1 , wherein the lead free solder composition has a solidus temperature in a range from 120° C. to 135° C.5. The lead free solder composition of claim 3 , wherein the lead free solder composition has a liquidus temperature in a range from 130° C. to 145° C. The present invention relates to a lead free solder composition, and particularly to a lead free solder composition with high ductility.Rear windows of automobiles typically include electrical devices, such as defrosters, located on the glass. In order to provide electrical connections to the electrical devices, a small area of metallic coating is generally applied to the glass to obtain a metalized surface which is configured to be electrically connected to the electrical device, and then an electrical connector of the electrical device can be soldered onto the metalized surface.In the prior art, the electrical connector is ...

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23-04-2020 дата публикации

THERMOELECTRIC ALLOY, METHOD FOR PRODUCING THE SAME AND THERMOELECTRIC ALLOY COMPOSITE

Номер: US20200123637A1
Принадлежит:

The present invention relates to a thermoelectric alloy and a method for producing the same. A starting material is firstly provided, and an oxidation process is performed to the starting material to obtain an oxidized material composition. Then, the oxidized material composition and a carburizing agent are added into a quartz tube, and a sealing process is performed to the quartz tube. And then, the sealed quartz tube is subjected to a carburization process, thereby obtaining the thermoelectric alloy with excellent thermoelectric figure-of-merit.

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11-05-2017 дата публикации

Electroactive Materials for Metal-Ion Batteries

Номер: US20170133674A1
Принадлежит:

A particulate material is provided consisting of a plurality of porous particles comprising an electroactive material selected from silicon, germanium or a mixture thereof, wherein the porous particles have a Dparticle diameter in the range of greater than 5 to 25 μm, an intra-particle porosity in the range of from 30 to 90%, and a pore diameter distribution having a peak in the range of from 50 to less than 400 nm as determined by mercury porosimetry. Also provided are electrodes and electrode compositions comprising the particulate material, a rechargeable metal-ion battery comprising the particulate material, and a process for the preparation of the particulate material. 1. A particulate material consisting of a plurality of porous particles comprising an electroactive material selected from silicon , germanium or a mixture thereof , wherein the porous particles have a Dparticle diameter in the range of greater than 5 to 25 μm , an intra-particle porosity in the range of from 30 to 90% , and a pore diameter distribution having at least one peak in the range of from 50 to less than 400 nm as determined by mercury porosimetry.2. A particulate material according to claim 1 , wherein the particulate material comprises at least 60 wt % claim 1 , preferably at least 70 wt % claim 1 , more preferably at least 75 wt % claim 1 , more preferably at least 80 wt % claim 1 , and most preferably at least 85 wt % of the electroactive material.3. A particulate material according to or claim 1 , wherein the electroactive material comprises at least 90 wt % claim 1 , preferably at least 95 wt % claim 1 , more preferably at least 98 wt % claim 1 , more preferably at least 99 wt % silicon.4. A particulate material according to any one of the preceding claims claim 1 , wherein the particulate material comprises a minor amount of one or more additional elements selected from aluminium claim 1 , antimony claim 1 , copper claim 1 , magnesium claim 1 , zinc claim 1 , manganese claim 1 , ...

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19-05-2016 дата публикации

SPHEROIDIZING TREATMENT METHOD FOR MOLTEN METAL OF SPHEROIDAL GRAPHITE CAST IRON

Номер: US20160138139A1
Принадлежит:

A graphite spheroidizing agent containing: 30-80 wt % of Si; Mg; RE (rare earth element) which comprises Ce with a purity level of 80-100 wt % or La with a purity level of 80-100 wt %; Ca; and Al is used. The graphite spheroidizing agent is added so as to satisfy the conditions that an amount of RE equivalent to 0.001-0.009 wt % of the total weight of the molten metal, an amount of Ca equivalent to 0.001-0.02 wt % of the total weight of the molten metal, and an amount of Al equivalent to 0.001-0.02 wt % of the total weight of the molten metal are added to the molten metal, and that the molten metal contains 0.03-0.07 wt % of Mg after the graphite spheroidizing treatment. It is possible to suppress crystallization of chunky graphite in a thick section of spheroidal graphite cast iron and deterioration of mechanical properties, with a low cost. 1. A spheroidizing treatment method for spheroidizing graphite by addition of a graphite spheroidizing agent to a molten metal , wherein:the graphite spheroidizing agent contains: 30-80 wt % of Si; Mg; RE (rare earth element) which comprises Ce with a purity level of 80-100 wt % or La with a purity level of 80-100 wt %; Ca; and Al; andthe graphite spheroidizing agent is added so as to satisfy the conditions that an amount of RE equivalent to 0.001-0.009 wt % of the total weight of the molten metal, an amount of Ca equivalent to 0.001-0.02 wt % of the total weight of the molten metal, and an amount of Al equivalent to 0.001-0.02 wt % of the total weight of the molten metal are added to the molten metal, and that the molten metal contains 0.03-0.07 wt % of Mg after the graphite spheroidizing treatment.2. The spheroidizing treatment method according to claim 1 , wherein the graphite spheroidizing agent further contains S claim 1 , and the graphite spheroidizing agent is added such that an amount of RE equivalent to 0.002-0.008 wt % of the total weight of the molten metal is added claim 1 , and a ratio of the amount of RE added to ...

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28-05-2015 дата публикации

Methods and Materials for the Improvement of Photovoltaic Device Performance

Номер: US20150144186A1
Автор: Timothy A. Gessert
Принадлежит: Alliance for Sustainable Energy LLC

Embodiments disclosed herein include photovoltaic absorber materials ( 302 ) and photovoltaic devices ( 300 ) having absorber materials ( 302 ) with intentionally increased permittivity. Alternative embodiments include methods ( 200 ) of producing thin film photovoltaic absorbers ( 302 ) from materials having increased permittivity or methods of producing devices having absorbers ( 302 ) with increased permittivity. In selected embodiments, the permittivity of an absorber material ( 302 ) is increased by incorporating a permittivity increasing material therein.

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18-05-2017 дата публикации

Method for production and identification of weyl semimetal

Номер: US20170138844A1
Принадлежит: PRINCETON UNIVERSITY

Disclosed is a method for producing and identifying a Weyl semimetal. Identification is enabled via a combination of the vacuum ultraviolet (low-photon energy) and soft X-ray (SX) angle resolved photoemission spectroscopy (ARPES). Production generally requires providing high purity raw materials, creating a mixture, heating the mixture in a container at a temperature sufficient for thermal decomposition of an impurity while preventing the possible reaction between the side walls of the container and the raw materials, depositing the resulting compound and a transfer agent onto the bottom surface of the ampule, differentially heating the ampule, and allowing a chemical vapor transport reaction to complete.

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17-05-2018 дата публикации

MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME

Номер: US20180137889A1
Принадлежит:

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element. 1. A method of forming a near field transducer (NFT) layer , the method comprising:depositing a film of a primary element, the film having a film thickness and a film expanse; andimplanting at least one secondary element into the primary element,wherein the NFT layer comprises the film of the primary element doped with the at least one secondary element.2. The method according to claim 1 , wherein the at least one secondary element is implanted using beam line implanting claim 1 , or plasma immersion implanting.3. The method according to claim 1 , wherein the concentration of the at least one secondary element is not constant across the thickness of the film4. The method according to claim 1 , wherein the concentration of the at least one secondary element is not constant across the expanse of the film.5. The method according to claim 1 , wherein the at least one secondary element is implanted at more than one energy.6. The method according to further comprising annealing after implanting the at least one secondary element.7. The method according to further comprising depositing a metal or dielectric layer on the implanted film before annealing.8. The method according to further comprising implanting at least one secondary element after annealing.9. The method according to further comprising patterning the NFT layer into a NFT.10. The method according to further comprising depositing a metal or dielectric layer on the film of primary element before implanting the at least one secondary element.11. A method of forming a peg of a near field transducer (NFT) claim 1 , the method comprising:depositing a primary element to ...

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08-09-2022 дата публикации

HYDROGEN STORAGE MATERIAL, HYDROGEN STORAGE CONTAINER, AND HYDROGEN SUPPLY APPARATUS

Номер: US20220282355A1
Принадлежит: SANTOKU CORPORATION

A low-cost hydrogen storage material has hydrogen absorption (storage) and desorption properties suitable for hydrogen storage. A hydrogen storage container including the hydrogen storage material and a hydrogen supply apparatus including the hydrogen storage container are disclosed. The hydrogen storage material includes an alloy having a specific elemental composition represented by Formula (1), in which, in a 1000×COMP image of a cross section of the alloy obtained by EPMA, a plurality of phases enriched with R are present, the phases having phase diameters of 0.1 μm or more and 10 μm or less, and 100 or more sets of combinations of two phases in the phases are present in a visual field of 85 μm×120 μm in the COMP image, the shortest separation distance between the two phases being 0.5 to 20 μm. 1. A hydrogen storage material comprising:an alloy having an elemental composition represented by the following Formula (1), [{'br': None, '[Chem. 1]'}, {'br': None, 'sub': (1-a-b)', 'a', 'b', 'c', 'd', 'e', 'f, 'TiRM1FeMnM2C\u2003\u2003(1)'}], 'wherein, in a 1000×COMP image of a cross section of the alloy obtained by EPMA, a plurality of phases enriched with R are present, the phases having phase diameters of 0.1 μm or more and 10 μm or less, and 100 or more sets of combinations of two phases in the phases are present in a visual field of 85 μm×120 μm in the COMP image, the shortest separation distance between the two phases being 0.5 to 20 μm,'}where R is at least one selected from the rare earth elements and contains Ce as an essential element, M1 is at least one selected from the group consisting of the group 4 elements and the group 5 elements in the periodic table, and M2 is at least one selected from the transition metal elements (excluding M1, Ti, Fe, and Mn), Al, B, Ga, Si, and Sn, where the rare earth elements include Sc and Y, and a satisfies 0.003≤a≤0.15, b satisfies 0≤b≤0.20, c satisfies 0.40≤c≤1.15, d satisfies 0.05≤d≤0.40, e satisfies 0≤e≤0.20, f satisfies ...

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08-09-2022 дата публикации

HEAT-RESISTANT IR ALLOY

Номер: US20220282358A1
Принадлежит:

Provided is an Ir alloy which is excellent in high temperature strength while ensuring oxidation wear resistance at high temperature. The Ir alloy consists of: 7 mass % or more, and less than 10 mass % of Rh; 0.5 mass % to 5 mass % of Ta; 0 mass % to 5 mass % of at least one kind of element selected from among Co, Cr, and Ni; and Ir as the balance, wherein a total content of the Ta and the at least one kind of element selected from among Co, Cr, and Ni is 5 mass % or less. 1. An Ir alloy consisting of:7 mass % or more, and less than 10 mass % of Rh;0.5 mass % to 5 mass % of Ta;0 mass % to 5 mass % of at least one kind of element selected from among Co, Cr, and Ni; andIr as the balance,wherein a total content of the Ta and the at least one kind of element selected from among Co, Cr, and Ni is 5 mass % or less.2. The Ir alloy according to claim 1 , wherein a content of the Rh is 8 mass % or more claim 1 , and less than 10 mass %. This application is a Continuation-in-Part of Application No. 16/471,054, filed Jun. 19, 2019, which is a national stage of PCT/JP2017/045632, filed Dec. 20, 2017, which claims priority to Japanese Application No. 2017-242366, filed Dec. 19, 2017, and Japanese Application No. 2016-249860, filed Dec. 22, 2016. The entire contents of the prior applications are hereby incorporated by reference herein in their entirety.The present invention relates to a heat-resistant Ir alloy.Various alloys have been developed as heat-resistant materials to be used for a crucible for high temperature, a heat-resistant device, a gas turbine, a spark plug, a sensor for high temperature, a jet engine, and the like. As major heat-resistant materials, there are given, for example, heat-resistant steel, a nickel-based superalloy, a platinum alloy, and tungsten. The heat-resistant steel, the nickel-based superalloy, the platinum alloy, and the like have solidus points of less than 2,000° C., and hence cannot be used at a temperature of 2,000° C. or more. Meanwhile, ...

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08-09-2022 дата публикации

Deformable Conductors and Related Sensors, Antennas and Multiplexed Systems

Номер: US20220285043A1
Автор: Ronay Mark
Принадлежит:

A conducting shear thinning gel composition and methods of making such a composition are disclosed. The conducting shear thinning gel composition includes a mixture of a eutectic gallium alloy and gallium oxide, wherein the mixture of eutectic gallium alloy and gallium oxide has a weight percentage (wt %) of between about 59.9% and about 99.9% eutectic gallium alloy, and a wt % of between about 0.1% and about 2.0% gallium oxide. Also disclosed are articles of manufacture, comprising the shear thinning gel composition, and methods of making article of manufacture having a shear thinning gel composition. Also disclosed are sensors and multiplexed systems utilizing deformable conductors. 1. (canceled)2. An electronic system , comprising:a flexible substrate; and (a) has an electrical property having a substantially linear response proportional over a predetermined range to the metal gel being stretched,', '(b) comprises a eutectic gallium alloy; and an amount of gallium oxide distributed within the bulk of the gallium alloy, wherein the bulk mixture of eutectic gallium alloy and gallium oxide has a weight percentage (wt %) of between about 59.9% and about 99.9% eutectic gallium alloy, and', '(c) the metal gel is stabilized by gallium oxide microstructures, 'a stretchable conductor disposed on the stretchable substrate, the stretchable conductor comprising a metal gel composition, wherein the metal gel compositionan encapsulant configured to encapsulate the stretchable conductor with the flexible substrate.3. The electronic system of claim 2 , further comprising a circuit claim 2 , operatively coupled to the stretchable conductor claim 2 , configured to determine the electrical property and output a signal based on the electrical property.4. The electronic system of claim 2 , wherein the metal gel composition has a viscosity that changes from about 10 claim 2 ,000 claim 2 ,000 Pa*s to about 40 claim 2 ,000 claim 2 ,000 Pa*s under low shear to about 150 Pa*s to about 180 ...

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08-09-2022 дата публикации

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and optical sensor

Номер: US20220285602A1

A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.

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07-05-2020 дата публикации

THERMOELECTRIC MATERIALS SYNTHESIZED BY SELF-PROPAGATING HIGH TEMPERATURE SYNTHESIS PROCESS AND METHODS THEREOF

Номер: US20200139440A1
Принадлежит:

The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion. 115-. (canceled)16. A method of preparing a thermoelectric material , comprising:1) weighing powders of reactants according to an appropriate stoichiometric ratio, mixing the powders in an agate mortar, and cold-pressing the powders into a pellet;{'sup': '−3', '2) sealing the pellet in a silica tube under a pressure of 10Pa, initiating a self-propagating high temperature synthesis (SHS) by point-heating a portion of the pellet wherein, once the SHS starts, a wave of exothermic reactions passes through the remaining portion of the pellet, cooling down the pellet after reaction in air or quenched in salt water to obtain a cooled-down pellet; and'} {'sub': 4-e', 'e', '12-f', 'f', '3, 'wherein the reactants include Co, M, Sb, and Te powders, M is Fe or Ni, the stoichiometric ratio is Co:M:Sb:Te=4−e:e:12−f:f, where 0≤e≤1.0, 0≤f≤1.0, the cooled-down pellet obtained in step (2) contains CoMSbTe; and parameters of the PAS include a reaction temperature of 650° C. with a heating rate of 100° C./min and a pressure of 40 MPa for 8 min, a final product is a CoSbbased thermoelectric material.'}, '3) crushing the cooled-down pellet obtained in step 2) into powder, and sintering the powder with plasma activated sintering (PAS) to form a bulk material,'} The present disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with plasma activated sintering (PAS) and a method for preparing the same. More specifically, the present disclosure relates to a new criterion for combustion synthesis and the method for preparing thermoelectric ...

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07-05-2020 дата публикации

RFeB SINTERED MAGNET AND METHOD FOR PRODUCING SAME

Номер: US20200143965A1
Автор: NAKAMURA Michihide
Принадлежит:

The present invention relates to an RFeB sintered magnet containing: 28% to 33% by mass of a rare-earth element R, 0% to 2.5% by mass of Co (cobalt) (i.e., Co may not be contained), 0.3% to 0.7% by mass of Al (aluminum), 0.9% to 1.2% by mass of B (Boron), and less than 1,500 ppm of O (oxygen), with the balance being Fe, containing an RFeAl phase having an RFeAlstructure in a crystal grain boundary, and having a coercivity of 16 kOe or more. 1. An RFeB sintered magnet , 28% to 33% by mass of a rare-earth element R,', '0% to 2.5% by mass of Co,', '0.3% to 0.7% by mass of Al,', '0.9% to 1.2% by mass of B, and', 'less than 1,500 ppm of O,', 'with the balance being Fe,, 'comprising{'sub': 6', '14-x', 'x, 'comprising an RFeAl phase having an RFeAlstructure in a crystal grain boundary, and'}having a coercivity of 16 kOe or more.2. The RFeB sintered magnet according to claim 1 , further comprising:0.1% to 0.5% by mass of Cu,wherein the total of the contents of Cu and Al exceeds 0.5% by mass, andwherein the content of Al is larger than the content of Cu.3. The RFeB sintered magnet according to claim 1 , further comprising:0.05% to 0.35% by mass of Zr.4. The RFeB sintered magnet according to claim 1 ,wherein the rare-earth element R comprises at least one element selected from the group consisting of Nb, Pr, Dy, and Tb.5. The RFeB sintered magnet according to claim 4 ,wherein the rare-earth element R comprises at least one element selected from the group consisting of Nb and Pr.6. The RFeB sintered magnet according to claim 1 , further comprising:0.2% by mass or less of Ga. The present invention relates to an RFeB sintered magnet containing a rare-earth element (hereinafter referred to as “R”), iron (Fe) and boron (B) as main constituting elements.RFeB sintered magnets were discovered in 1982 by Masato Sagawa et al. and have excellent characteristics that most of their magnetic characteristics such as residual magnetic flux density are far higher than those of conventional ...

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14-05-2020 дата публикации

High Entropy Alloy Having Composite Microstructure and Method of Manufacturing the Same

Номер: US20200149144A1
Автор: Hong Sun Ig, Song Jae Sook
Принадлежит:

A method of making a metallic alloy, more particularly, a high-entropy alloy with a composite structure that exhibits high strength and good ductility, and is used as a component material in electromagnetic, chemical, shipbuilding, machinery, and other applications, and in extreme environments, and the like. 1. A method of manufacturing a high-entropy alloy having a composite structure , comprising:preparing metallic elements comprising, by weight %, Fe greater than 5% to 35% or less, Mn greater than 5% to 35% or less, Ni greater than 5% to 35% or less, and Co greater than 5% to 35% or less, and comprising at least one of Cu greater than 3% to 40% or less and Ag greater than 3% to 40% or less;manufacturing an alloy by melting the metallic elements having been prepared in one of casting, arc melting, and powder metallurgy methods;homogenization heat treating the alloy having been manufactured; andcooling the alloy after the homogenization heat treating.2. The method of manufacturing a high-entropy alloy having a composite structure of claim 1 , wherein the homogenization heat treating is performed while the alloy is maintained in a temperature range of 900° C. to 1200° C. for 1 hour to 48 hours.3. The method of manufacturing a high-entropy alloy having a filamentary composite structure of claim 1 , further comprising:performing deformation processing,wherein the deformation processing includes hot working, rolling, drawing, at room temperature and elevated temperatures. This application is a divisional of application Ser. No. 15/455,649, filed Mar. 10, 2017, which claims the benefit of Korean Patent Application No. 10-2016-0029570, filed on Mar. 11, 2016, the disclosures of which are hereby incorporated in their entirety by reference.The present disclosure relates to a metal alloy for a component material used in electromagnetic, chemical, shipbuilding, machinery, and other applications, in addition to components, structural materials, and the like, used in an ...

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14-06-2018 дата публикации

IMPLANT AND METHOD FOR PRODUCTION THEREOF

Номер: US20180161144A1
Принадлежит:

An implant, in particular an intraluminal endoprosthesis, or a semi-finished part for an implant, having a hollow cylindrical body, wherein the body includes magnesium, and the body is enriched with gallium or a gallium alloy in a region close to a surface. 1. An implant , in particular an intraluminal endoprosthesis , comprising a hollow cylindrical body , wherein the body comprises magnesium , and the body is enriched with gallium or a gallium alloy in a region close to a surface.2. The implant according to claim 1 , wherein the intraluminal endoprosthesis is a stent.3. The implant according to claim 1 , wherein the magnesium forms part of a magnesium alloy.4. The implant according to claim 3 , wherein the magnesium alloy is a WE 43 alloy claim 3 , characterized as 4% Y claim 3 , 2% Nd claim 3 , 0.5% Gd claim 3 , 0.5% Dy claim 3 , 0.5% Zr claim 3 , and a remainder Mg.5. The implant according to claim 1 , wherein the region close to the surface is enriched with the gallium alloy claim 1 , wherein the gallium alloy comprises 65 to 95% gallium.6. The implant according to claim 5 , wherein the gallium alloy further comprises indium and tin.7. The implant according to claim 1 , wherein the region close to the surface comprises a depth of up to 40 μm from the surface.8. The implant according to claim 1 , wherein the region close to the surface comprises a depth of at least 10 μm from the surface.9. The implant according to claim 8 , wherein the depth is at least 15 μm from the surface.10. The implant according to claim 1 , wherein the region close to the surface comprises magnesium alloyed with gallium.11. The implant according to claim 1 , further comprising a polymer coating.12. A semifinished part for an intraluminal endoprosthesis claim 1 , the semifinished part comprising a hollow cylindrical body claim 1 , wherein the body comprises magnesium and diffused into a region close to a surface of the body is gallium or a gallium alloy.13. The semifinished part according ...

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15-06-2017 дата публикации

Method for producing La/Ce/MM/Y base alloys, resulting alloys, and battery electrodes

Номер: US20170166998A1
Принадлежит:

A carbothermic reduction method is provided for reducing a La-, Ce-, MM-, and/or Y-containing oxide in the presence of carbon and a source of a reactant element comprising Si, Ge, Sn, Pb, As, Sb, Bi, and/or P to form an intermediate alloy material including a majority of La, Ce, MM, and/or Y and a minor amount of the reactant element. The intermediate material is useful as a master alloy for in making negative electrode materials for a metal hydride battery, as hydrogen storage alloys, as master alloy additive for addition to a melt of commercial Mg and Al alloys, steels, cast irons, and superalloys; or in reducing SmOto Sm metal for use in Sm—Co permanent magnets. 116-. (canceled)17. A method of making a metal hydride battery electrode material , comprising carbothermically reducing an oxide selected from the group consisting of La-containing oxide , a Ce-containing oxide , and MM-containing oxide in the presence of carbon as a reducing agent and a source of a reactant element X wherein X is selected from the group consisting of Si , Ge , Sn , Pb , As , Sb , Bi , and P to achieve substantial completion of the carbothermic reduction reaction to form a low carbon rare earth-based alloy having a majority of a rare earth element selected from the group consisting of La , Ce , and MM , a minor amount of X , and a low carbon content of about 2 weight % or less and alloying the carbothermically reduced , low carbon rare earth-based alloy with a transition metal to form the electrode material.18. The method of wherein the transition metal is Ni.19. The method of wherein some of the Ni is substituted by at least one of B claim 18 , Al claim 18 , Si claim 18 , Ti claim 18 , V claim 18 , Cr claim 18 , Mn claim 18 , Co claim 18 , Fe claim 18 , Cu claim 18 , Zn claim 18 , and Mo.20. The method of wherein the rare earth-based alloy further includes an amount of Pr claim 17 , Nd claim 17 , and/or Zr.21. The method of wherein the rare earth-based alloy includes about 5 to about 50 ...

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25-06-2015 дата публикации

Nanowire preparation methods, compositions, and articles

Номер: US20150174659A1
Принадлежит: Carestream Health Inc

Nanomaterial preparation methods, compositions, and articles are disclosed and claimed. Such methods can provide nanomaterials with improved morphologies and reduced nitric oxide co-production relative to previous methods. Such materials are useful in electronic applications.

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15-06-2017 дата публикации

Magnet material, permanent magnet, motor, and power generator

Номер: US20170169923A1
Принадлежит: Toshiba Corp

A magnet material of an embodiment includes a composition expressed by R 1 N x (Cr p Si q M 1-p-q ) z , where R represents at least one element selected from Y, La, Ce, Pr, Nd, and Sm, M represents at least one element selected from Fe and Co, x is 0.5≦x≦1.5 (atomic ratio), p is 0.005≦p≦0.2 (atomic ratio), q is 0.005≦q≦0.2 (atomic ratio), and z is 6.0≦z≦7.5 (atomic ratio). The magnet material satisfies a condition of I α-Fe /I 2-17-3 <0.05, where I α-Fe is a maximum intensity of X-ray diffraction peaks from an α-Fe phase and I 2-17-3 is a maximum intensity of X-ray diffraction peaks from an R 2 M 17 N 3 phase, in an X-ray diffraction profile of the magnet material.

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29-09-2022 дата публикации

Method of Producing Sintered Magnet

Номер: US20220310292A1
Принадлежит: LG CHEM, LTD.

A method of producing a sintered magnet is disclosed herein. In some embodiments, a method of producing a sintered magnet comprises, sintering a R—Fe—B based magnetic powder to produce a sintered magnet; wherein the R is Nd, Pr, Dy, Ce or Tb, and infiltrating a eutectic alloy into the sintered magnet, wherein the eutectic alloy contains Pr, Al, Cu and Ga, and wherein infiltration the eutectic alloy includes applying the eutectic alloy to the sintered magnet and heat-treating the sintered magnet to which the eutectic alloy is applied. 1. A method of producing a sintered magnet comprising:sintering an R—Fe—B based magnetic powder to produce a sintered magnet;infiltrating a eutectic alloy into the sintered magnet,wherein the eutectic alloy contains Pr, Al, Cu and Ga,wherein R in the R—Fe—B based magnetic powder is Nd, Pr, Dy, Ce or Tb, andwherein infiltrating the eutectic alloy comprises:applying the eutectic alloy to the sintered magnet; andheat-treating the sintered magnet to which the eutectic alloy is applied.2. The method of claim 1 , wherein:heat treating the sintered magnet comprises heating the sintered magnet to 500 to 1000 degrees Celsius.3. The method of claim 1 , wherein:heat treating the sintered magnet treatment step comprises:a primary heat treatment step of heating the sintered magnet to 800 to 1000 degrees Celsius;and a secondary heat treatment step of heating the sintered magnet to 500 to 600 degrees Celsius.4. The method of claim 1 , further comprising:synthesizing the R—Fe—B based magnet powder by a reduction-diffusion method.5. The method of claim 1 , wherein:the eutectic alloy has a Ga content of 1 to 20 at %.6. The method of claim 1 , further comprising:{'sub': '2', 'mixing PrH, Al, Cu and Ga to produce a eutectic alloy mixture;'}pressing the eutectic alloy mixture by a cold isostatic pressing method;heating the pressed eutectic alloy mixture to produce the eutectic alloy.7. The method of claim 1 , wherein:the R—Fe—B based magnet powder comprises ...

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29-09-2022 дата публикации

SINTERED R-T-B BASED MAGNET AND METHOD FOR PRODUCING THE SAME

Номер: US20220310319A1
Автор: NOZAWA Noriyuki
Принадлежит:

A method for producing a sintered R-T-B based magnet includes: preparing a sintered R-T-B based magnet work (R is a rare-earth element; and T is at least one selected from the group consisting of Fe, Co, Al, Mn and Si, and contains Fe with no exception); preparing an RL-RH-B-M based alloy; and a diffusion step of performing heat treatment while at least a portion of the RL-RH-B-M based alloy is attached to at least a portion of a surface of the sintered R-T-B based magnet work. In the RL-RH-B-M based alloy, the content of RL is 50 mass % or higher and 95 mass % or lower, the content of RH is 45 mass % or lower (including 0 mass %), the content of B is 0.1 mass % or higher and 3.0 mass % is lower; and the content of M is 4 mass % or higher and 49.9 mass % or lower. 1. A method for producing a sintered R-T-B based magnet , comprising:preparing a sintered R-T-B based magnet work (R is a rare-earth element and contains, with no exception, at least one selected from the group consisting of Nd, Pr and Ce; and T is at least one selected from the group consisting of Fe, Co, Al, Mn and Si, and contains Fe with no exception);preparing an RL-RH-B-M based alloy (R is a light rare-earth element and contains, with no exception, at least one selected from the group consisting of Nd, Pr and Ce; RH is at least one selected from the group consisting of Tb, Dy and Ho; B is boron; and M is at least one selected from the group consisting of Cu, Ga, Fe, Co, Ni, Al, Ag, Zn, Si and Sn); anda diffusion step of heating the sintered R-T-B based magnet work and the RL-RH-B-M based alloy at a temperature not lower than 700° C. and not higher than 1100° C. in a vacuum or an inert gas atmosphere while at least a portion of the RL-RH-B-M based alloy is attached to at least a portion of a surface of the sintered R-T-B based magnet work,wherein the RL-RH-B-M based alloy contains RL at a content not lower than 50 mass % and not higher than 95 mass %, contains RH at a content not higher than 45 mass % ...

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22-06-2017 дата публикации

Sputtering Target Comprising Al-Te-Cu-Zr Alloy, and Method for Producing Same

Номер: US20170175252A1
Автор: Koido Yoshimasa
Принадлежит:

An Al—Te—Cu—Zr alloy sputtering target, comprising 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr and the remainder of Al, wherein a Te phase, a Cu phase and a CuTe phase are not present in a structure of the target. An object of the present invention is to provide an Al—Te—Cu—Zr alloy sputtering target capable of effectively reducing particle generation, nodule formation and the like upon sputtering and further capable of reducing oxygen contained in the target. 1. An Al—Te—Cu—Zr alloy sputtering target , comprising 20 at % to 40 at % of Te , 5 at % to 20 at % of Cu , 5 at % to 15 at % of Zr and the remainder of Al , wherein a Te phase , a Cu phase and a CuTe phase are not present in a structure of the target.2. The Al—Te—Cu—Zr alloy sputtering target according to claim 1 , wherein an Al phase claim 1 , a CuAl phase claim 1 , a TeZr phase and a Zr phase are present in the structure of the target.3. The Al—Te—Cu—Zr alloy sputtering target according to claim 1 , having a mean grain size of 10 μm or less.4. The Al—Te—Cu—Zr alloy sputtering target according to claim 1 , having a purity of 3N or more and an oxygen content of 3000 wt. ppm or less.5. The Al—Te—Cu—Zr alloy sputtering target according to claim 1 , comprising one or more elements selected from Si claim 1 , C claim 1 , Ti claim 1 , Hf claim 1 , V claim 1 , Nb claim 1 , Ta claim 1 , lanthanoid elements claim 1 , Ge claim 1 , Zn claim 1 , Co claim 1 , Ni claim 1 , Fe claim 1 , Mg claim 1 , Ga claim 1 , S and Se.6. The Al—Te—Cu—Zr alloy sputtering target according to claim 1 , having a relative density of 90% or more.7. A method of manufacturing an Al—Te—Cu—Zr alloy sputtering target claim 1 , the method comprising the steps of: dissolving a Cu raw material and a Te raw material to produce a CuTe alloy ingot; pulverizing the CuTe alloy ingot; then hot-pressing the pulverized CuTe powder and a Zr raw material powder to produce a CuTeZr alloy; then pulverizing the CuTeZr alloy; hot- ...

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22-06-2017 дата публикации

Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME

Номер: US20170178876A1
Принадлежит: Mitsubishi Materials Corp

A Cu—Ga alloy sputtering target includes, as a component composition, Ga: 0.1 to 40.0 at % and a balance including Cu and inevitable impurities, in which a porosity is 3.0% or lower, an average diameter of circumscribed circles of pores is 150 μm or less, and an average crystal grain size of Cu—Ga alloy particles is 50 μm or less.

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02-07-2015 дата публикации

ANODE MATERIALS FOR LI-ION BATTERIES

Номер: US20150188125A1
Принадлежит:

The subject matter disclosed herein relates generally to the field of the energy storage in Li-ion type batteries. More specifically, the subject matter disclosed herein relates to materials for the anode of a Li-ion battery, to their method of preparation and to their use in the anode of a Li-ion battery. Another subject matter disclosed herein are Li-ion batteries manufactured by incorporating the disclosed materials. Devices comprising the disclosed Li-ion batteries are also disclosed. 1. An anode for a Li-ion battery , comprising: a layer of nanowires as the anode active material having a thickness of greater than about 10 μm on a conductive substrate , wherein the nanowires comprise silicon and/or geranium , have an optional coating of graphitic carbon , and are prepared in a supercritical fluid with a seed material without attachment to a surface.2. The anode of claim 1 , wherein the amount of nanowires on the conductive substrate is from about 0.1 mg cmto about 1.5 mg cm.3. The anode of claim 1 , wherein the nanowires have an average diameter of from about 1 nm to about 100 nm and an average length of greater than about 1 μm.4. (canceled)5. (canceled)6. The anode of claim 1 , wherein the seed material comprises tin and the nanowires are silicon nanowires that comprise at least 0.5 wt. % tin in the body of the nanowire.7. (canceled)8. The anode of claim 1 , wherein the seed material comprises gold nanocrystal and the nanowires are germanium nanowires that are substantially free of gold.9. The anode of claim 1 , wherein the nanowires comprise a silicon and germanium alloy represented by a formula LiSiGewhere x=0-4.4 and y=0-1.10. (canceled)11. (canceled)12. (canceled)13. The anode of claim 1 , wherein the layer of nanowires further comprises a binder.14. The anode of claim 13 , wherein the binder comprises polyvinylidene fluoride (PVdF) claim 13 , annealed PVdF claim 13 , crosslinked sodium alginate claim 13 , crosslinked carboxymethyl cellulose claim 13 , ...

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28-05-2020 дата публикации

NOVEL TRIBOELECTRIC NANOGENERATORS

Номер: US20200169188A1
Автор: Gao Shengjie, Wu Wenzhuo
Принадлежит: PURDUE RESEARCH FOUNDATION

The present disclosure relates to novel triboelectric nanogenerators with flexible polymeric dielectric layer comprising liquid metal particles, and method of making and using the novel triboelectric nanogenerators. 1. A triboelectric nanogenerator (TENG) comprising:a flexible polymeric dielectric layer comprising liquid metal particles and a polymer,wherein the liquid metal particles are dispersed within the polymer;a first electrode; anda second electrode,wherein the second electrode is spaced apart from the first electrode with the flexible polymeric dielectric layer disposed between the first electrode and the second electrode.2. The triboelectric nanogenerator of claim 1 , whereinthe flexible polymeric dielectric layer comprises a first surface and an opposite second surface;the first electrode comprises a first surface and an opposite second surface; andthe second electrode comprises a first surface and an opposite second surface,wherein the flexible polymeric dielectric layer is disposed on the first surface of the first electrode.3. The triboelectric nanogenerator of claim 1 , wherein the liquid metal particles are substantially homogeneously dispersed within the flexible polymeric dielectric layer.4. The triboelectric nanogenerator of claim 2 , wherein the flexible polymeric dielectric layer is further provided a first contact layer and a second contact layer claim 2 , wherein the first contact layer is attached to the first surface of the flexible polymeric dielectric layer claim 2 , and the second contact layer is attached to the opposite second surface of the flexible polymeric dielectric layer.5. The triboelectric nanogenerator of claim 4 , wherein the first contact layer is disposed between the first surface of the flexible polymeric dielectric layer and the first surface of the first electrode.6. The triboelectric nanogenerator of claim 1 , wherein the opposite second surface of the first electrode is attached to a flexible substrate.7. The ...

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13-06-2019 дата публикации

Bismuth-Indium Alloy For Liquid-Tight Bonding of Optical Windows

Номер: US20190177218A1
Принадлежит: PIKE Technologies of Wisconsin, Inc.

Disclosed herein are seals for liquid-tight bonding of an optical window comprising a Bi—In alloy. Also disclosed are optical cells comprising the Bi—In alloy seals to provide a liquid-tight seal between a cell housing and a drilled optical window. 1. A seal for liquid-tight bonding of an optical window comprising an aperture and at least one conduit , wherein the seal comprises a Bi—In alloy.2. The seal of claim 1 , wherein the Bi—In alloy is a eutectic composition.3. The seal of claim 1 , wherein the Bi—In alloy comprises 66.0-67.0% In by weight and/or 33.0-34.0% Bi by weight.4. The seal of claim 1 , wherein the Bi—In alloy consists essentially of 66.0-67.0% In by weight and 33.0-34.0% Bi by weight.5. An optical cell comprising:(a) a cell housing, the cell housing comprising a housing aperture, an inlet port, and an outlet port;(b) a seal, the seal comprising a seal aperture, an inlet conduit, and an outlet conduit, wherein the seal comprises a Bi—In alloy;(c) a drilled optical window, the drilled optical window comprising an inlet and an outlet(d) a spacer, the spacer comprising a spacer aperture; and(e) an undrilled optical window,wherein the drilled optical window, the spacer, and the undrilled optical window form a chamber,wherein the housing aperture, the seal aperture, and the spacer aperture are aligned and form an optical path transverse to the drilled optical window and the undrilled optical window;wherein the seal is configured to form a liquid-tight seal between the housing and the drilled optical window and allow fluid communication between the inlet port and inlet via the inlet conduit and the outlet port and the outlet via the outlet conduit.6. The cell of claim 5 , wherein the Bi—In alloy comprises 66.0-67.0% In by weight and/or 33.0-34.0% Bi by weight.7. The cell of claim 5 , wherein the Bi—In alloy consists essentially of 66.0-67.0% In by weight and 33.0-34.0% Bi by weight.8. The cell of further comprising a mounting plate claim 5 , the mounting ...

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04-06-2020 дата публикации

THERMOELECTRIC MATERIALS SYNTHESIZED BY SELF-PROPAGATING HIGH TEMPERATURE SYNTHESIS PROCESS AND METHODS THEREOF

Номер: US20200171570A1
Принадлежит:

The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion. 115-. (canceled)16. A method of preparing a thermoelectric material , comprising:1) weighing powders of reactants according to an appropriate stoichiometric ratio, mixing the powders in an agate mortar, and cold-pressing the powders into a pellet;{'sup': '−3', '2) sealing the pellet in a silica tube under a pressure of 10Pa, initiating a self-propagating high temperature synthesis (SHS) by point-heating a portion of the pellet wherein, once the SHS starts, a wave of exothermic reactions passes through the remaining portion of the pellet, cooling down the pellet after reaction in air or quenched in salt water to obtain a cooled-down pellet; and'} {'sub': 2', '3-x', 'x', '2', '3, 'wherein the reactants include Bi, Te, and Se powders, the stoichiometric ratio is Bi:Te:Se =2:(3-x):x, where 0 Подробнее

04-06-2020 дата публикации

THERMOELECTRIC MATERIALS SYNTHESIZED BY SELF-PROPAGATING HIGH TEMPERATURE SYNTHESIS PROCESS AND METHODS THEREOF

Номер: US20200171571A1
Принадлежит:

The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion. 2. Based on the new criterion for combustion synthesis , those binary compounds include thermoelectric compounds , high temperature intermetalic and high temperature refractory.4. According to the above step , the pellet after SHS was crushed into powders and then sintered by spark plasma sintering to obtain the bulks5. According to the above step , the binary compounds are mostly thermoelectric material , high temperature ceramics and intermetallic.7. In step 1) of , what we choose for elemental A can be the elemental in IIIB , IVB , and VB column of periodic Table. What we choose for elemental B can be the elemental in VIIIB column of periodic Table. What we choose for elemental X can be the elemental in IIIA , IVA , VA column of periodic Table. In step 3) of , the parameter for spark plasma sintering is with the temperature above 850° C. and the pressure around 30-50 MPa.8. According to and , one of or the mixture of the Ti , Zr , Hf , Sc , Y , La , V , Nb , and Ta can be selected as elemental A. One of or the mixture of the Fe , Co , Ni , Ru , Rh , Pd , and Pt can be selected as elemental B. One of or the mixture of the Sn , Sb , and Bi can be selected as elemental X. The present disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with plasma activated sintering (PAS) and a method for preparing the same. More specifically, the present disclosure relates to a new criterion for combustion synthesis and the method for preparing thermoelectric materials which can meet the new criterion.In the heat flow of the energy ...

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04-06-2020 дата публикации

Thermoelectric materials synthesized by self-propagating high temperature synthesis process and methods thereof

Номер: US20200171572A1
Принадлежит: Wuhan University of Technology WUT

The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

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