Method for manufacturing a perpendicular magnetic data recording media having a pseudo onset layer

A method for manufacturing a magnetic media for perpendicular magnetic data recording. The method includes depositing a Ru layer in a pure oxygen atmosphere and then further depositing Ru in the presence of oxygen to form a thin pseudo onset layer. The pseudo onset layer can advantageously be depositing in the same deposition chamber and using the same target as that used to deposit the underlying Ru layer. This saves a great deal of manufacturing cost and complexity. The presence of the pseudo onset layer reduces grains size and increases grain separation in a high Ku magnetic layer deposited thereon, thereby increasing signal to noise ratio and decreasing magnetic core width (MCW).

Method for deposition

Embodiments of the present invention include a method. The method includes producing a first vapor from a solid source material, reacting hydrogen telluride to form a second vapor comprising tellurium, and depositing on a support a coating material comprising tellurium within a deposition environment, the deposition environment comprising the first vapor and the second vapor. Another embodiment is a system. The system includes a deposition chamber disposed to contain a deposition environment in fluid communication with a support; a solid source material disposed in fluid communication with the deposition chamber; and a hydrogen telluride source in fluid communication in fluid communication with the deposition chamber.

Method for producing solid electrolyte membrane

An object of the present invention is to provide a solid electrolyte membrane which comprises Li 3x La 2/3-x TiO 3 (0.05≦x≦0.17) and has excellent ion conductivity. Disclosed is a method for producing a solid electrolyte membrane which comprises a solid electrolyte described by the composition formula Li 3x La 2/3-x TiO 3 (0.05≦x≦0.17), the method comprising the steps of: producing a gas phase material comprising lithium, lanthanum and titanium by converting into a gas phase at least one selected from the group consisting of a lithium metal, a lanthanum metal, a titanium metal, a lithium-lanthanum alloy, a lithium-titanium alloy, a lanthanum-titanium alloy and a lithium-lanthanum-titanium alloy, and depositing an Li 3x La 2/3-x TiO 3 (0.05≦x≦0.17) thin film on a substrate by a gas phase method for reacting the gas phase material with oxygen in a single element state.

Plasma Spray Method

The invention relates to a plasma spray method which can serve as a starting point for a manufacture of metal nanopowder, nitride nanopowder or carbide nanopowder or metal films, nitride films or carbide films. To achieve an inexpensive manufacture of the nanopowder or of the film, in the plasma spray in accordance with the invention a starting material (P) which contains a metal or silicon oxide is introduced into a plasma jet ( 113 ) at a process pressure of at most 1000 Pa, in particular at most 400 Pa. The starting material (P) contains a metal or silicon oxide which vaporizes in the plasma jet ( 113 ) and is reduced in so doing. After the reduction, the metal or silicon which formed the metal or silicon oxide in the starting material is thus present in pure form or in almost pure form. The metal or silicon can be deposited in the form of nanopowder or of a film ( 124 ). Nitride nanoparticles or films or carbide nanoparticles or films can be generated inexpensively by addition of a reactant (R) containing nitrogen or carbon.

Method for depositing a transparent barrier layer system

The invention relates to a method for producing a transparent bather layer system, wherein in a vacuum chamber at least two transparent barrier layers and a transparent intermediate layer disposed between the two barrier layers are deposited on a transparent plastic film, wherein for deposition of the barrier layers aluminium is vaporised and simultaneously at least one first reactive gas is introduced into the vacuum chamber and wherein for deposition of the intermediate layer aluminium is vaporised and simultaneously at least one second reactive gas and a gaseous or vaporous organic component are introduced into the vacuum chamber.

Evaporating device and vaccum evaporation device using the same

An evaporating device comprises a gas guiding element, an evaporating boat received in the gas guiding element to define a receiving space between the evaporation tray and the gas guiding element, and a gas channel. The evaporation tray comprises a bottom wall and two opposing first sidewalls and two opposing second sidewalls extending from the periphery of the first bottom wall. At least one of the first sidewalls and/or at least one of the second sidewalls defines a number of gas holes. The gas holes communicate with the receiving space. One end of the gas channel connects the gas guiding element and communicates with the receiving space to feed gas into the receiving space. A vacuum evaporation device using the evaporating device is also provided.

NEGATIVE ELECTRODE PLATE, PREPARATION METHOD THEREOF AND ELECTROCHEMICAL DEVICE

The invention refers to negative electrode plate, preparation method thereof and electrochemical device. The negative electrode plate comprises: a negative current collector, a negative active material layer, and an inorganic dielectric layer which are provided in a stacked manner; the negative active material layer comprises opposite first surface and second surface, wherein the first surface is disposed away from the negative current collector; the inorganic dielectric layer is disposed on the first surface of the negative active material layer and consists of an inorganic dielectric material. The negative electrode plate provided by the application is useful in an electrochemical device, and can result in an electrochemical device having simultaneously excellent safety performance and cycle performance. 1. A negative electrode plate , comprising:a negative current collector;a negative active material layer, disposed on at least one surface of the negative current collector, said negative active material layer comprises opposite first surface and second surface, wherein said first surface is disposed away from the negative current collector; andan inorganic dielectric layer, disposed on the first surface of the negative active material layer, said inorganic dielectric layer consisting of an inorganic dielectric material; said inorganic dielectric layer comprises a first dielectric layer on an outer surface of the negative active material layer, and the first dielectric layer has a thickness of from 30 nm to 1000 nm;{'sup': 3', '3, 'wherein the negative electrode plate has a compact density of from 1.2 g/cmto 2.0 g/cm, a porosity of from 25% to 45% and a wetting velocity of electrolyte on per 10 cm×10 cm area of 2 μg/s or more.'}2. The negative electrode plate according to claim 1 , wherein the first dielectric layer has a thickness of from 50 nm to 600 nm.3. The negative electrode plate according to claim 1 , wherein the first dielectric layer has a thickness of ...

Hard aluminum oxide coating for various applications

A structure for a hardened optically transmissive material including a hard coating is provided. The structure for the hardened optically transmissive material including the hard coating includes a substrate, and an aluminum oxide film disposed over the substrate, wherein the aluminum oxide film is grown to between 100 nanometers (nm) and 5 microns (um). The aluminum oxide film demonstrates a hardness greater than 10 gigapascals (GPa) as measured by nanoindentation, and the aluminum oxide film exhibits a transparency value such that at least 84 percent of light waves transmit through the aluminum oxide film for light waves within a range of wavelengths.

MAGNETIC RECORDING MEDIUM

The average thickness tof a magnetic recording medium meets the requirement that t≤5.5 [μm], and the dimensional change amount Δw in the width direction of the magnetic recording medium with respect to the tension change in the longitudinal direction of the magnetic recording medium meets the requirement that 700 ppm/N≤Δw. 2. The magnetic recording medium according to claim 1 , wherein the dimensional change amount Δw satisfies 750 ppm/N≤Δw≤8000 ppm/N.3. The magnetic recording medium according to claim 1 , wherein the dimensional change amount Δw satisfies 800 ppm/N≤Δw≤8000 ppm/N.4. The magnetic recording medium according to claim 1 , whereina temperature expansion coefficient α of the magnetic recording medium satisfies 6 ppm/° C.≤α≤8 ppm/° C., anda humidity expansion coefficient β of the magnetic recording medium satisfies β≤5 ppm/% RH.5. The magnetic recording medium according to claim 1 , wherein a Poisson's ratio ρ of the magnetic recording medium satisfies 0.3≤ρ.6. The magnetic recording medium according to claim 1 , wherein an elastic limit value σin the longitudinal direction of the magnetic recording medium satisfies 0.8 N≤σand the elastic limit value σdoes not depend on a rate V in elastic limit measurement.7. The magnetic recording medium according to claim 1 , wherein an arithmetic mean roughness Ra of a magnetic surface of the magnetic recording medium is 2.0 nm or less.8. The magnetic recording medium according to claim 1 , further comprisinga magnetic surface and a back surface on an opposite side to the magnetic surface, whereinan interlayer friction coefficient μ between the magnetic surface and the back surface satisfies 0.20≤μ≤0.80.9. The magnetic recording medium according to claim 1 , wherein the squareness ratio in the perpendicular direction of the magnetic recording medium is 73% or more.10. The magnetic recording medium according to claim 1 , wherein a ratio R (=Hc(50)/Hc(25)*100) between a coercive force Hc (50) measured in a perpendicular ...

Surface-coated cutting tool

In a surface-coated cutting tool, a hard coating includes one or more layers. At least one layer thereof is a hard coating layer composed of a complex nitride or carbonitride layer of Al, Cr, and Si and satisfying (Al 1-x-y Cr x Si y )(C z N 1-z ) where x, y and z are atomic ratios and satisfy 0.1≦x≦0.4, 0.01≦y≦0.2, and 0≦z≦0.3, respectively. The hard coating layer contains particles including: less than 10 atomic % of non-metal components selected from C and N; and metal components selected from Cr, Al and Si. In the cross-section perpendicular to the tool body surface, the number ratio of oblate particles with an Al content of 50 atomic % or less, a long diameter of less than 0.5 μm, and an aspect ratio of 2.0 or more is 90% or more with respect to the total number of the particles.

Nanoparticle deposition in porous and on planar substrates

A method of preparing a metal nanoparticle on a surface includes subjecting a metal source to a temperature and a pressure in a carrier gas selected to provide a vapor metal species at a vapor pressure in the range of about 10 −4 to about 10 −11 atm; contacting the vapor metal species with a heated substrate; and depositing the metal as a nanoparticle on the substrate.

ARC EVAPORATION DEVICE

An arc evaporation device includes a bar-shaped target having a front end surface and a side surface to be melted and evaporated from the front end surface by arc discharge; an arc power supply; a target feed unit which moves the target axially and in a feed direction; an ignition rod capable of contact with the side surface of the target, in an intersecting direction intersecting the feed direction; a rotary actuator which moves the ignition rod along the intersecting direction from a retraction position apart from the side surface in the intersecting direction to make the ignition rod enter a transport region into which the target is fed; and a detection unit which detects whether or not the ignition rod has come into contact with the side surface of the target during movement of the ignition rod. 1. An arc evaporation device comprising:a bar-shaped target which has a front end surface as one end surface in an axial direction and a side surface extending in the axial direction, the side surface being continuous with a peripheral edge of the front end surface, the target being configured to be melted and evaporated from the front end surface thereof by arc discharge;an electrode for discharging between the electrode and the front end surface of the target;an arc power supply which applies a voltage between the target and the electrode to cause arc discharge between the front end surface and the electrode;a target feed unit which moves the target in a feed direction in which the front end surface advances and along the axial direction;a contact unit having a shape capable of making contact with the side surface of the target, at a predetermined position with respect to the feed direction, in an intersecting direction intersecting the feed direction;a contact-unit driving unit which moves the contact unit along the intersecting direction from a retraction position apart from the side surface in the intersecting direction, so as to make the contact unit enter a ...

Coating packaged chamber parts for semiconductor plasma apparatus

An advanced coating for parts used in plasma processing chamber. The advanced coating is formed over an anodized surface that has not been sealed. After the coating is formed, the coated area is masked, and the remaining anodized surface is sealed. The porous and rough structure of the anodized but un-sealed aluminum enhances adhesion of the coating. However, to prevent particle generation, the exposed anodized surface is sealed after formation of the coating. The coating can be of yttria, formed by plasma enhanced atomic deposition techniques which results in a dense and smooth coating.

GAS BARRIER MULTILAYER FILM AND METHOD FOR PRODUCING THE SAME

A gas barrier multilayer film includes a film substrate, a layer formed on at least one surface of the film substrate and made of an inorganic compound, and a gas barrier layer formed on the layer made of the inorganic compound and formed of a mixture, which contains an acrylic acid polymer made of poly(meth)acrylic acid or a partially neutralized product thereof wherein a degree of neutralization of the poly(meth)acrylic acid with zinc is not larger than about 25 mol %, a sugar or starch, and a hypophosphite wherein the hypophosphite is present at about 1 mass % to about 15 mass % of a total solid content of the mixture. 1. A gas barrier multilayer film comprising:a film substrate;a layer formed on at least one surface of the film substrate and made of an inorganic compound; anda gas barrier layer formed on the layer made of the inorganic compound and formed of a mixture, which contains an acrylic acid polymer made of poly(meth)acrylic acid or a partially neutralized product thereof wherein a degree of neutralization of the poly(meth)acrylic acid with zinc is not larger than about 25 mol %, a sugar or starch, and a hypophosphite wherein the hypophosphite is present at about 1 mass % to about 15 mass % of a total solid content of the mixture.2. The gas barrier multilayer film of claim 1 , wherein the layer made of the inorganic compound is formed by a vacuum deposition process and can be made of at least one member selected from the group consisting of aluminum claim 1 , aluminum oxide claim 1 , magnesium oxide and silicon oxide.3. A method for manufacturing a gas barrier multilayer film comprising:forming a gas barrier layer on a layer which is formed on at least one surface of a film substrate and made of an inorganic compound, wherein when the gas barrier layer is formed, a coating solution, which is comprised of a mixture of an acrylic acid polymer made of poly(meth)acrylic acid or a partially neutralized product thereof wherein a degree of neutralization of the ...

METHOD FOR MANUFACTURING NANOWIRES

A method of manufacturing a nanowire includes: forming a silicon oxide layer by performing deposition of a silicon oxide on a substrate; forming a metal layer by performing deposition of a metal on the silicon oxide layer; forming a metal agglomerate by performing heat treatment on the substrate where the metal layer is formed; and growing a nanowire in an area where the metal agglomerate is formed by performing plasma treatment on the substrate where the metal agglomerate is formed. 1. A method of manufacturing a nanowire , the method comprising:forming a silicon oxide layer by performing deposition of a silicon oxide on a substrate;forming a metal layer by performing deposition of a metal on the silicon oxide layer;forming a metal agglomerate by performing heat treatment on the substrate where the metal layer is formed; andgrowing a nanowire in an area where the metal agglomerate is formed by performing plasma treatment on the substrate where the metal agglomerate is formed.2. The method of claim 1 , wherein forming the silicon oxide layer comprises performing one of chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD).3. The method of claim 1 , wherein the silicon oxide layer has a thickness of 80 nm to 120 nm.4. The method of claim 1 , wherein the metal is one of silver (Ag) claim 1 , copper (Cu) claim 1 , gold (Au) claim 1 , aluminum (Al) claim 1 , magnesium (Mg) claim 1 , rhodium (Rh) claim 1 , iridium (Ir) claim 1 , tungsten (W) claim 1 , molybdenum (Mo) claim 1 , cobalt (Co) claim 1 , zinc (Zn) claim 1 , nickel (Ni) claim 1 , cadmium (Cd) claim 1 , ruthenium (Ru) claim 1 , osmium (Os) claim 1 , platinum (Pt) claim 1 , palladium (Pd) claim 1 , tin (Sn) claim 1 , rubidium (Rb) claim 1 , chromium (Cr) claim 1 , tantalum (Ta) claim 1 , niobium (Nb) and metal alloys thereof.5. The method of claim 4 , wherein the metal is silver (Ag) or a silver alloy.6. The method of claim 1 , wherein forming the metal layer comprises performing ...

AlCrN-Based Coating Providing Enhanced Crater Wear Resistance

Coating ( 210 ) deposited on a surface of a substrate ( 201 ) comprising a multi-layered film ( 216 ) consisting of a plurality of A-layers and a plurality of B-layers deposited alternating one on each other forming a A/B/A/B/A . . . architecture, the A-layers comprising aluminium chromium boron nitride and the B-layers comprising aluminium chromium nitride and not comprising boron, whereas the multi-layered film ( 216 ) comprises at least a first portion ( 216 a ) and a last portion ( 216 c ), wherein the average boron content in the first coating portion ( 216 a ) is higher than the average boron content in the last coating portion ( 216 c ), and both the first coating portion ( 216 a ) and the last coating portion ( 216 c ) exhibit inherent compressive stresses and wherein the inherent compressive stress in the first coating portion ( 216 a ) is lower than it in the last coating portion ( 216 c ).

SUPERALLOY TARGET

A superalloy target wherein the superalloy target has a polycrystalline structure of random grain orientation, the average grain size in the structure is smaller than 20 μm, and the porosity in the structure is smaller than 10%. Furthermore, the invention includes a method of producing a superalloy target by powder metallurgical production, wherein the powder-metallurgical production starts from alloyed powder(s) of a superalloy and includes the step of spark plasma sintering (SPS) of the alloyed powder(s). 1. Superalloy target whereinthe superalloy target has a polycrystalline structure of random grain orientation,the average grain size in the structure is smaller than 20 μm, andthe porosity in the structure is smaller than 10%.2. Superalloy target according to claim 1 , characterized in that the superalloy is a Co-based superalloy with cobalt as the main metallic component.3. Superalloy target according to claim 2 , characterized in that the Co-based superalloy comprises at least one element of C claim 2 , Cr claim 2 , W claim 2 , Ni claim 2 , Ti claim 2 , Al claim 2 , Ir claim 2 , and Ta as alloying element.4. Superalloy target according to claim 1 , characterized in that the superalloy is a Ni-based superalloy with nickel as main metallic component.5. Superalloy target according to claim 4 , characterized in that the Ni-based superalloy comprises at least one element of Cr claim 4 , Fe claim 4 , Co claim 4 , Mo claim 4 , W claim 4 , Ta claim 4 , Al claim 4 , Ti claim 4 , Zr claim 4 , Nb claim 4 , Re claim 4 , Y claim 4 , V claim 4 , C claim 4 , B claim 4 , and Hf as alloying element.6. Superalloy target according to claim 1 , characterized in that the superalloy is an aluminide-based alloy.7. Superalloy target according to claim 6 , characterized in that the aluminide-based superalloy is a TiAl-based superalloy claim 6 , a Ni-Aluminide claim 6 , a Fe-Aluminide claim 6 , a Hf-Aluminide claim 6 , a Cr-Aluminide claim 6 , a Nb-Aluminide claim 6 , a Ta-Aluminide ...

METHOD OF MANUFACTURING A HEMT DEVICE WITH REDUCED GATE LEAKAGE CURRENT, AND HEMT DEVICE

An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer. 1. A method , comprising: forming a gate electrode on a semiconductor body that includes a semiconductor heterostructure; and', forming a trench through the dielectric layer until a surface region of the heterostructure is reached;', 'forming a sacrificial layer in the trench and on the dielectric layer;', 'selectively removing the sacrificial layer from the trench, the selectively removing completely exposing said surface region of the heterostructure;', 'forming in the trench and on the sacrificial layer, by reactive evaporation, a protection layer made of a metal nitride;', 'forming a first metal layer on the protection layer; and', 'carrying out a lift-off step, simultaneously removing said sacrificial layer and portions of the protection layer and of the first metal layer on the sacrificial layer., 'forming a dielectric layer on the heterostructure, wherein forming the gate electrode comprises], 'manufacturing a high electron mobility transistor (HEMT) device of a normally-on type, the manufacturing including2. The method according to claim 1 , wherein forming the protection layer includes covering completely a bottom of the trench with said metal nitride.3. The method according to claim 1 , wherein forming the protection layer includes forming the protection layer with stuffed grain boundaries.4. The method according to claim 1 , wherein forming the protection layer includes depositing claim 1 , by a reactive-evaporation technique claim 1 , a material chosen from ...

REACTOR DEVICE WITH REMOVABLE DEPOSITION MONITOR

A reactor apparatus includes a first chamber coupled to a first source of vacuum, a monitor chamber isolated from the first chamber and coupled to a second source of vacuum, and at least one removable deposition monitor disposed in the monitor chamber. 115-. (canceled)16. A reactor apparatus comprising:a deposition chamber coupled to a first source of vacuum, the deposition chamber exposed to one or more evaporation sources;a monitor chamber isolated from the deposition chamber by a vacuum isolation valve and coupled to a second source of vacuum;a moveable face plate coupled to rails extending into an interior of the monitor chamber, the at least one removable deposition monitor disposed on the rails and oriented toward the vacuum isolation valve.17. The reactor apparatus according to claim 16 , wherein the first source of vacuum is different than the second source of vacuum.18. The reactor apparatus according to claim 16 , wherein the at least one removable deposition monitor comprises a plurality of removable deposition monitors.19. The reactor apparatus according to claim 16 , wherein each of the plurality of deposition monitors is directed to a different evaporation source.20. The reactor apparatus according to claim 19 , wherein the deposition monitors are rotatable on the rails to position one of the plurality deposition monitors toward the vacuum isolation valve.21. The reactor apparatus according to claim 19 , further comprising dividers separating each of the plurality of deposition monitors.22. The reactor apparatus according to claim 16 , wherein the one or more evaporation sources are contained in a source chamber separate from the deposition chamber.23. The reactor apparatus according to claim 16 , wherein the source chamber is coupled to a third source of vacuum. This Application is a continuation of U.S. application Ser. No. 11/293,346 filed on Dec. 2, 2005. Priority is claimed pursuant to 35 U.S.C. §120. The above-noted Application is incorporated by ...

RIGID DECORATIVE MEMBER HAVING WHITE RIGID COATING LAYER, AND METHOD FOR PRODUCING THE SAME

A rigid decorative member of the present invention is a rigid decorative member comprising a base and a rigid coating layer laminated on or above the base, wherein the rigid coating layer comprises a reaction compound of raw metal, in which a metal M1 and a metal M2, and in addition, selectively a metal M3 are combined, and of a non-metallic element selected from one or two or more of nitrogen, carbon, and oxygen, or comprises an alloy in which a metal M1 and a metal M2, and in addition, selectively a metal M3 are combined; the metal M1 is selected from one or two of Mo and W; the metal M2 is selected from one or two or more of Nb, Ta, and V; and the metal M3 is selected from one or two or more of Cr, Ti, Hf, and Zr. 1. A rigid decorative member comprising a base and a rigid coating layer laminated on or above the base , whereinthe rigid coating layer comprises a reaction compound of raw metal, in which a metal M1 and a metal M2, and in addition, selectively a metal M3 are combined, and of a non-metallic element selected from one or two or more of nitrogen, carbon, and oxygen, or comprises an alloy in which a metal M1 and a metal M2, and in addition, selectively a metal M3 are combined;the metal M1 is selected from one or two of Mo and W; the metal M2 is selected from one or two or more of Nb, Ta, and V; and the metal M3 is selected from one or two or more of Cr, Ti, Hf, and Zr.2. The rigid decorative member according to claim 1 , wherein the metal M2 is selected from one or two of Nb and Ta.3. The rigid decorative member according to claim 1 , wherein the raw metal is combined with the metal M3; and the metal M3 is Cr.4. The rigid decorative member according to claim 1 , wherein 70 mass % or more in total of the metal M1 and the metal M2 is contained in the raw metal.5. The rigid decorative member according to claim 1 , wherein the rigid coating layer has a thickness of 0.5 to 4 μm.6. The rigid decorative member according to claim 1 , wherein the appearance color ...

Systems, Devices, and/or Methods for Evaporating High Vapor Pressure Materials

Certain exemplary embodiments can provide a method, which can comprise via a transonic gas jet, depositing a thin film of LiPON on a substrate via a directed vapor deposition process. The transonic gas jet transports a thermally evaporated vapor cloud comprising the LiPON, wherein, the transonic gas jet comprises one of (a) substantially entirely nitrogen (N 2 ) gas; or (b) nitrogen (N 2 ) gas as a dopant in a concentration greater than 10% by volume in an inert carrier gas.

THERMOCYCLING SYSTEM, COMPOSITION, AND MICROFABRICATION METHOD

A system and method of manufacture for the system, comprising a set of heater-sensor dies, each heater-sensor die comprising an assembly including a first insulating layer, a heating region comprising an adhesion material layer coupled to the first insulating layer and a noble material layer, and a second insulating layer coupled to the heating region and to the first insulating layer through a pattern of voids in the heating region, wherein the pattern of voids in heating region defines a coarse pattern associated with a heating element of the heating region and a fine pattern, integrated into the coarse pattern and associated with a sensing element of the heating region; an electronics substrate configured to couple heating elements and sensing elements of the set of heater-sensor dies to a controller; and a set of elastic elements configured to bias each of the set of heater-sensor dies against a detection chamber. 1. A system for thermocycling biological samples detection chambers comprising: an assembly including a first insulating layer, a heating region comprising an adhesion material layer coupled to the first insulating layer and a noble material layer coupled to the adhesion material layer, and a second insulating layer coupled to the heating region and to the first insulating layer through a pattern of voids in the heating region,', 'wherein the pattern of voids in heating region defines a coarse pattern associated with a heating element of the heating region and a fine pattern, integrated into the coarse pattern and associated with a sensing element of the heating region;, 'a set of heater-sensor dies, each heater-sensor die in the set of heater-sensor dies comprisingan electronics substrate configured to couple heating elements and sensing elements of the set of heater-sensor dies to a controller; anda set of elastic elements coupled to a second substrate surface of the electronics substrate opposing a first substrate surface of the electronics ...

BIPOLAR ARC-COATING METHOD

An electric-arc evaporation method for coating surfaces, wherein at least two active consumption targets are used in the method, characterized in that the consumption targets are alternately connected as a cathode and an anode during the coating process. 1. An electric-arc evaporation method for coating surfaces , comprising:coating a surface using at least two active consumption targets alternately connected as a cathode and an anode during the coating process.2. The method according to claim 1 , comprising using at least one reactive gas in the method.3. The method according to claim 2 , wherein the at least one reactive gas comprises at least one constituent forming an electrically insulating compound with the target material.4. The method according to claim 2 , comprising using a mixture of gases claim 2 , wherein at least one gas is a non-reactive working gas.5. The method according to claim 1 , wherein the at least two different consumption targets differ in their composition claim 1 , and a buildup of a nanolayer multi-layer system occurs during coating.6. The method according to claim 1 , wherein the at least two active consumption targets may be disposed directly adjacent in such a manner that a plasma forming over a first target claim 1 , while a second target is operated as a cathode claim 1 , partially extends across the first target claim 1 , which at that point in time is operated as an anode.7. The method according to claim 1 , wherein claim 1 , over a total coating time t claim 1 , periods tto twith different lengths are used for respective modes of operation of the at least two consumption targets connected as a cathode or an anode.8. The method according to claim 7 , comprising using the periods to tto twith different lengths for the respective mode of operation of the at least two consumption targets connected claim 7 , as a cathode or an anode in a periodic sequence over the total coating time t.9. The method according to claim 1 , wherein the at ...

MAGNETIC RECORDING MEDIUM

A magnetic recording medium includes: an elongated substrate having flexibility; a first layer, being provided on the substrate, containing Cr, Ni, and Fe, and having a face-centered cubic lattice structure with a (111) plane preferentially oriented so as to be parallel to a surface of the substrate; a second layer, being provided on the first layer, containing Co and O, having a ratio of an average atomic concentration of O to an average atomic concentration of Co of 1 or more, and having a column structure with an average particle diameter of 3 nm or more and 13 nm or less; a third layer, being provided on the second layer, and containing Ru; and a perpendicular recording layer, being provided on the third layer. 1. A magnetic recording medium , comprising:an elongated substrate having flexibility;a first layer, being provided on the substrate, containing Cr, Ni, and Fe, and having a face-centered cubic lattice structure with a (111) plane preferentially oriented so as to be parallel to a surface of the substrate;a second layer, being provided on the first layer, containing Co and O, having a ratio of an average atomic concentration of O to an average atomic concentration of Co of 1 or more, and having a column structure with an average particle diameter of 3 nm or more and 13 nm or less;a third layer, being provided on the second layer, and containing Ru; anda perpendicular recording layer, being provided on the third layer.2. The magnetic recording medium according to claim 1 , whereinthe magnetic recording medium has an X-ray diffraction intensity ratio of 60 cps/nm or more in the first layer.4. The magnetic recording medium according to claim 1 , whereinthe first layer has a thickness of 5 nm or more and 40 nm or less.5. The magnetic recording medium according to claim 1 , whereinthe second layer has a thickness of 10 nm or more and 150 nm or less.6. The magnetic recording medium according to claim 1 , whereinthe column structure has an inclination angle of 60 ...

DECORATIVE ARTICLE AND TIMEPIECE

An external part of a timepiece has a substrate that includes a base layer and a surface layer, the surface layer including Ti or stainless steel; and a coating disposed on the substrate. The coating includes an outermost layer formed primarily of TiC defining an external surface, and an interior layer formed primarily of TiC positioned between the substrate and the outermost layer. An elastic modulus of the interior layer is greater than the elasticmodulus of the outermost layer. 1. An external part of a timepiece , comprising:a substrate that includes a base layer and a surface layer, the surface layer including Ti or stainless steel; anda coating disposed on the substrate,wherein the coating includes an outermost layer formed primarily of TiC defining an external surface, and an interior layer formed primarily of TiC positioned between the substrate and the outermost layer, andan elastic modulus of the interior layer is greater than the elastic modulus of the outermost layer.2. The external part of a timepiece according to claim 1 , wherein:the base layer includes metal.3. The external part of a timepiece according to claim 1 , wherein:the base layer includes non-metallic material.4. The external part of a timepiece according to claim 3 , wherein:the non-metallic material is at least one of ceramics, plastics, stone, and wood.5. The external part of a timepiece according to claim 1 , wherein:a thickness of the surface layer is greater than or equal to 0.1 μm and less than or equal to 50 μm.6. The external part of a timepiece according to claim 5 , wherein:the thickness of the surface layer is greater than or equal to 1.0 μm and less than or equal to 10 μm.7. The external part of a timepiece according to claim 1 , wherein:the C content of the outermost layer is greater than or equal to 45 wt % and less than or equal to 60 wt %.8. The external part of a timepiece according to claim 1 , wherein:the C content of the interior layer is greater than or equal to 35 wt % ...

DURABLE 3D GEOMETRY CONFORMAL ANTI-REFLECTION COATING

Methods and systems for depositing a thin film are disclosed. The methods and systems can be used to deposit a film having a uniform thickness on a substrate surface that has a non-planar three-dimensional geometry, such as a curved surface. The methods involve the use of a deposition source that has a shape in accordance with the non-planar three-dimensional geometry of the substrate surface. In some embodiments, multiple layers of films are deposited onto each other forming multi-layered coatings. In some embodiments, the multi-layered coatings are antireflective (AR) coatings for windows or lenses. 1. A method of depositing a film on a curved surface of a substrate , the method comprising:positioning the curved surface with respect to a source of a deposition system, wherein the source includes an effective surface having a curved shape in accordance with the curved surface of the substrate; andcausing the source to emit a plurality of particles such that the plurality of particles become deposited on the curved surface as the film, wherein the curved shape of the effective surface is associated with a thickness uniformity of the film.2. The method of claim 1 , wherein the deposition system is a sputter deposition system and the source is a sputter target claim 1 , wherein causing the source to emit the plurality of particles comprises directing a sputter gas at the sputter target such that the plurality of particles are sputtered from the sputter target.3. The method of claim 1 , wherein the deposition system is a plasma enhanced chemical vapor deposition (PECVD) system and the source is a hollow cathode source claim 1 , wherein causing the source to emit the plurality of particles comprises:supplying a reaction gas to the hollow cathode source, andcausing the hollow cathode source to discharge a plasma having ions and/or other reactive chemical species corresponding to the plurality of particles.4. The method of claim 3 , wherein the deposition system includes ...

Wear and/or friction reduction by using molybdenum nitride based coatings

A component including a substrate surface coated with a coating including at least one MoN layer having a thickness not less than 40 nm. Between the substrate surface and the at least one MoN layer the component includes: i) a substrate surface hardened layer, which is a hardened, nitrogen-containing substrate surface layer that is the result of a nitriding treatment carried out at the substrate surface and has a thickness not less than 10 nm, preferably not less than 20 nm and not greater than 150 nm, and/or ii) a layer system composed of more than 2 MoN layers and more than 2 CrN layers, wherein the MoN and CrN layers forming the layer system are individual layers deposited alternatingly one on each other forming a multilayer MoN/CrN coating film.

APPARATUS AND METHOD FOR DEPOSITING A COATING ON A SUBSTRATE AT ATMOSPHERIC PRESSURE

An apparatus for depositing a coating on a substrate at atmospheric pressure comprises (a) a plasma torch comprising a microwave source coupled to an antenna disposed within a chamber having an open end, the chamber comprising a gas inlet for flow of a gas over the antenna to generate a plasma jet; (b) a substrate positioned outside the open end of the chamber a predetermined distance away from a tip of the antenna; and (c) a target material to be coated on the substrate disposed at the tip of the antenna. 1. An apparatus for depositing a coating on a substrate at atmospheric pressure , the apparatus comprising: 'a microwave source coupled to an antenna disposed within a chamber having an open end, the chamber comprising a gas inlet for flow of a gas over the antenna to generate a plasma jet;', 'a plasma torch comprisinga substrate positioned outside the open end of the chamber a predetermined distance away from a tip of the antenna; anda target material to be coated on the substrate disposed at the tip of the antenna.2. The apparatus of claim 1 , further comprising a discharge tube surrounding the antenna and defining a pathway for gas flow over the antenna.3. The apparatus of claim 2 , further comprising a cylindrical nozzle disposed radially outside the discharge tube to direct a flow of nonreactive gas into a region surrounding the plasma jet.4. The apparatus of claim 1 , further comprising an arc source comprising an internal electrode separated from an external electrode claim 1 , the external electrode being in electrical contact with a first arc power source and the microwave source claim 1 , the internal electrode being in electrical contact with a second arc power source.5. The apparatus of claim 1 , wherein the target material is supported on the tip of the antenna.6. The apparatus of claim 1 , wherein the antenna comprises a hollow core claim 1 , and wherein the target material comprises a continuous feed to the tip of the antenna through the hollow core ...

RARE-EARTH OXIDE BASED COATINGS BASED ON ION ASSISTED DEPOSITION

A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is less than the first average surface roughness. 1. A chamber component for a processing chamber comprising:a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches; and{'sub': 2', '3', '2, 'a conformal protective layer on the at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film comprising 40 mol % to less than 100 mol % of YOand above 0 mol % to 60 mol % of ZrO, the conformal protective layer having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is less than the first average surface roughness.'}2. The chamber component of claim 1 , wherein the conformal protective layer has a thickness of 10-30 μm.3. The chamber component of claim 1 , wherein a porosity of the conformal protective layer is below 1%.4. The chamber component of claim 1 , wherein the conformal protective layer has a post polished roughness of less than 8 micro-inches.5. The chamber component of claim 1 , wherein the ceramic body is a bulk sintered ceramic body comprising at least one of YOor a ceramic compound comprising YAlOand a solid-solution of YO—ZrO.6. The chamber component of claim 1 , where the conformal protective layer comprises a conformal ...

ARC-DEPOSITED AL-CR-O COATINGS HAVING ENHANCED COATING PROPERTIES

The present invention relates to a method for coating AI-Cr-0 coatings with the help of a PVD-coating process. The PVD-coating process is performed with the help of Al and Cr comprising targets which are doped with Si. The doping of Si prevents the forming of oxide islands on the target during the reactive coating process. 1. Method for producing PVD-oxide-coatings with at least one layer consisting essentially of Al , Cr , Si and O , the method comprising at least the following steps:a) providing a PVD-coating chamberb) loading in such PVD-coating chamber substrates having at least one surface to be coatedc) performing a reactive PVD coating process wherein the process gas contains a reactive gas with reacts with metal ions produced from one or more targets for depositing the at least one layer consisting essentially of Al, Cr, Si and O on the substrate surface,{'sub': 1−x−y', 'x', 'y, 'characterized in that, the one or more targets used for performing the reactive PVD coating process in step c) have an element composition in atomic per cent given by the formula: AlCrSiwith 0.05≦y≦0.10 and 0.20≦x≦0.25 and the reactive gas is oxygen thereby producing a coating with at least one layer consisting essentially of Al, Cr, Si and O, wherein, if oxygen is not taken into account, in the at least one layer the silicon concentration is less than the silicon concentration in the one or more targets.'}2. Method according to characterized in that the PVD coating process is an arc evaporation process.3. Method according to characterized in that the process gas comprises essentially only oxygen.4. Method according to characterized in that x=0.05 and y=0.25.5. Method according to characterized in that wherein claim 1 , if oxygen is not taken into account claim 1 , in the at least one layer the silicon concentration is equal or less than half of the silicon concentration in the one or more targets.6. Coating system produced by a method according to .7. Substrate coated with a ...

LOW STRESS HARD COATINGS AND APPLICATIONS THEREOF

In one aspect, coated cutting tools are described herein comprising a substrate and a coating comprising a refractory layer deposited by physical vapor deposition adhered to the substrate, the refractory layer comprising MAlN wherein x≥0.68 and M is titanium, chromium or zirconium, the refractory layer including a cubic crystalline phase and having hardness of at least 25 GPa. 1. A method of making a coated cutting tool comprising:providing a cutting tool substrate; and{'sub': 1−x', 'x, 'depositing a coating over a surface of the substrate, the coating comprising a refractory layer including MAlN wherein x≥0.4 and M is titanium, chromium or zirconium, the refractory layer including a cubic crystalline phase, wherein the coating is deposited with a cathodic arc deposition apparatus comprising at least one cathode having diameter less than 80 mm.'}2. The method of claim 1 , wherein x≥0.68.3. The method of claim 1 , wherein x≥0.69.4. The method of claim 1 , wherein 0.7≤x≤0.85.5. The method of claim 1 , wherein the refractory layer has an Le of at least 100 kg.6. The method of claim 1 , wherein the refractory layer has an Lof at least 150 kg.7. The method of claim 4 , wherein the refractory layer has less than 15 weight percent hexagonal phase.8. The method of claim 1 , wherein the refractory layer is deposited directly on the substrate.9. The method of claim 1 , wherein the refractory layer is deposited on an intermediate refractory layer.10. The method of claim 9 , wherein the intermediate refractory layer comprises one or more metallic elements selected from the group consisting of aluminum and metallic elements of Groups IVB claim 9 , VB and VIB of the Periodic Table and one or more non-metallic elements of Groups IIIA claim 9 , IVA claim 9 , VA and VIA of the Periodic Table.11. The method of claim 1 , wherein each cathode of the cathodic arc deposition apparatus has a diameter less than 80 mm.12. The method of claim 1 , wherein the cathode has composition of AlTi. ...

Dielectric coated lithium metal anode

A method and apparatus for forming an anode electrode structure are provided. The deposition apparatus comprises a first spool chamber capable of housing a storage spool operable to provide the flexible substrate. The deposition apparatus further comprises a first deposition chamber arranged downstream from the first spool chamber. The first deposition chamber comprises a first coating drum capable of guiding the flexible substrate past a first plurality of deposition units capable of depositing lithium metal on the flexible substrate. The deposition apparatus further comprises a second deposition chamber arranged downstream from the first deposition chamber. The second deposition chamber comprises a second coating drum capable for guiding the flexible substrate past a second deposition unit comprising an evaporation crucible capable of depositing a ceramic protective film on the lithium metal film.

OPTICAL SENSOR FOR ANALYTE DETECTION

Devices, systems, and methods for detection of an analyte in a sample are disclosed. In some embodiments, an optical sensor can include a metallic layer and a plurality of dielectric pillars extending through the metallic layer. A plurality of regions of concentrated light can be supported in proximity to the ends of the plurality of dielectric pillars when a surface of the metallic layer is illuminated. Concentrated light within one or more of these regions can interact with an analyte molecule, allowing for detection of the analyte. 1. A device for detecting an analyte within a sample , the device comprising:a metallic layer; anda plurality of dielectric pillars extending through the metallic layer,wherein a plurality of regions of concentrated light are supported in proximity to the ends of the plurality of dielectric pillars when a surface of the metallic layer is illuminated.2. The device of claim 1 , further comprising a dielectric layer having a top surface and a bottom surface claim 1 , wherein the metallic layer is formed on the top surface of the dielectric layer claim 1 , and wherein the plurality of regions of concentrated light are supported in proximity to the ends of the plurality of dielectric pillars when the bottom surface of the metallic layer is illuminated.3. The device of claim 2 , further comprising a window formed on the bottom surface of the dielectric layer below the plurality of dielectric pillars.4. The device of claim 1 , wherein the plurality of regions of concentrated light comprise spatially-separated voxels above each of the plurality of dielectric pillars to which the light is substantially confined.5. The device of claim 1 , wherein the electric field strength of the light decays exponentially with height above the plurality of dielectric pillars.6. The device of claim 1 , wherein one or more of the plurality of dielectric pillars has a circular cross-section.7. The device of claim 1 , wherein one or more of the plurality of ...

WEAR AND/OR FRICTION REDUCTION BY USING MOLYBDENUM NITRIDE BASED COATINGS

A component including a substrate surface coated with a coating including at least one MoN layer having a thickness not less than 40 nm. Between the substrate surface and the at least one MoN layer the component includes: i) a substrate surface hardened layer, which is a hardened, nitrogen-containing substrate surface layer that is the result of a nitriding treatment carried out at the substrate surface and has a thickness not less than 10 nm, preferably not less than 20 nm and not greater than 150 nm, and/or ii) a layer system composed of more than 2 MoN layers and more than 2 CrN layers, wherein the MoN and CrN layers forming the layer system are individual layers deposited alternatingly one on each other forming a multilayer MoN/CrN coating film. 1. Component comprising a substrate surface coated with a coating comprising at least one MoN layer having a thickness not less than 40 nm , characterized in thatbetween the substrate surface and the at least one MoN layer: 'and/or', 'i) a substrate surface hardened layer is comprised, which is a hardened, nitrogen-containing substrate surface layer that is the result of a nitriding treatment carried out at the substrate surface and has a thickness not less than 10 nm,'}ii) a layer system composed of more than 2 MoN layers and more than 2 CrN layers is comprised, wherein the MoN and CrN layers forming the layer system are individual layers deposited alternate one on each other forming a multilayer MoN/CrN coating film.2. Component according to claim 1 , wherein no multilayer MoN/CrN coating film is comprised between the substrate surface and the at least one MoN layer claim 1 , and wherein said at least one MoN layer has a thickness not less than 500 nm.3. Component according to claim 1 , wherein no hardened claim 1 , nitrogen-containing substrate surface layer is comprised between the substrate surface and the at least one MoN layer claim 1 , and wherein said multilayer MoN/CrN coating film has a thickness not less than ...

Saw Blade or Other Cutting Tool Comprising a Coating

A cutting tool comprises a coating on a substrate. The coating comprises a first layer element having an overall composition comprising the metal or metalloid elements aluminum, chromium, titanium, and silicon. The first layer element comprises at least 2 N lay first layer element layers. Each of the first layer element layers comprises a nitride layer comprising the metal or metalloid elements aluminum, chromium, titanium and silicon. The N lay first layer element layers comprise at least two different types of layers that at least differ in a silicon content. A first type of the layers has a highest silicon content C Si,H , (in at. %) and a second type of the layers has a lowest silicon content C Si,L (in at. %), both relative to a total of the metal and metalloid elements, and with a ratio of the lowest silicon content C Si,L to the highest silicon content C Si,H in the range of 0.25≤C Si,L /C Si,H ≤0.9.

HIGH DURABILITY HEART VALVE

An improved heart bioprosthetic device having a metal frame wireform or stent having an outer external surface. The metal frame has a bond layer coating at least a portion of the external surface and a coating layer disposed on at least a portion of the bond layer. The bond layer comprises a metal selected from the group consisting of: chromium, titanium, zirconium, aluminum, platinum, palladium, and niobium. The coating layer is selected from the group consisting of: a metal nitride, a metal oxide, a metal carbide, and combinations thereof. The coating layer may have a thickness of about 10 μm or less and a grain size of about 10 nm to about 15 nm, and may be characterized as polycrystalline with randomly-oriented grains with both cubic and orthorhombic phases. In one embodiment, the bond layer comprises chromium and the coating layer comprises chromium nitride. 1. A prosthetic heart valve comprising:a metal frame;a bond layer disposed over at least a portion of the metal frame, the bond layer comprising at least one elemental metal;a coating layer disposed over at least a portion of the bond layer, the coating layer comprising at least one of a metal nitride, a metal oxide, or a metal carbide; anda plurality of flexible leaflets supported by the metal frame to form a one-way valve for blood flow therethrough.2. The prosthetic heart valve of claim 1 , wherein the metal frame comprises a radially collapsible and radially expandable stent or an undulating wireform.3. The prosthetic heart valve of claim 1 , wherein the metal frame comprises at least one of stainless steel claim 1 , cobalt-chromium claim 1 , titanium alloy claim 1 , nitinol claim 1 , a metal alloy claim 1 , a shape-memory metal claim 1 , or a super-elastic metal.4. The prosthetic heart valve of claim 1 , wherein the at least one elemental metal of the bond layer includes at least one of ruthenium claim 1 , palladium claim 1 , silver claim 1 , iridium claim 1 , platinum claim 1 , and gold.5. The ...

GAS SYSTEM FOR REACTIVE DEPOSITION PROCESS

A gas lance unit configured for a reactive deposition process with a plurality of spaced apart crucibles, wherein spaces are provided between the crucibles, is described. The gas lance unit includes a gas guiding tube having one or more outlets for providing a gas for the reactive deposition process, and a condensate guiding element for guiding a condensate, particularly an aluminum condensate, to one or more positions above the spaces. 1. A gas lance unit configured for a reactive deposition process with a plurality of spaced apart crucibles , wherein spaces are provided between the crucibles , the gas lance unit comprising:a gas guiding tube having one or more outlets for providing a gas for the reactive deposition process; anda condensate guiding element for guiding a condensate, to one or more positions above the spaces.2. The unit according to claim 1 , wherein the condensate guiding element comprises protrusions at the one or more positions.3. The unit according to claim 1 , wherein the condensate guiding element comprises a draining sheet having one or more protrusions.4. The unit according to claim 1 , wherein the condensate guiding element further comprises:a gas guiding tube support such that the gas guiding tube is supported upon the condensate guiding element.5. The unit according to claim 4 , wherein the gas guiding tube support has a recess for having the gas guiding tube at least partially embedded in the recess.6. An evaporation apparatus for a reactive deposition process claim 4 , comprising:a plurality of supports for a plurality of spaced apart crucibles, wherein spaces are provided between the crucibles;a deposition surface for depositing a material onto a substrate provided on the deposition surface; and a gas guiding tube having one or more outlets for providing a gas for the reactive deposition process; and', 'a condensate guiding element for guiding a condensate., 'a gas lance unit, wherein the gas lance unit is provided below the deposition ...

Package System for Packaging and Administering Controlled Dosages of Chemical Agents

A package system is disclosed for dispensing controlled amounts of a chemical agent. The package system includes an outer package that is generally gas and liquid impermeable. The outer package contains an inner package made from a degradable material, such as a material that is water degradable. The inner package contains a measured amount of a chemical agent. The chemical agent may be difficult to handle and may have corrosive properties, may be an oxidizer, or the like. The package system facilitates dispensing the chemical agent into a particular environment. In one embodiment, the package system is designed to hold a chemical agent for treating recreational water sources, such as swimming pools. 1. A package system for administering controlled dosages of a chemical comprising:{'sup': 2', '2, 'an outer package comprising a first film attached to a second film, the outer package having a periphery surrounding a compartment having an interior volume, the first film and the second film being attached together at the periphery, the first film and the second film having a moisture vapor transmission rate of less than about 0.5 g/100 in/24 hrs. and an oxygen transfer rate of less than about 0.5 cc/100 in/24 hrs., the outer package including a tear promoting portion for facilitating opening of the outer package; and'}an inner sealed package contained in the compartment of the outer package, the inner package being degradable when exposed to a degrading agent, the inner package containing a measured amount of a chemical agent;and wherein the outer package maintains a non-degradable environment for the inner package and the chemical agent.2. A package system as defined in claim 1 , wherein the inner sealed package is water degradable.3. A package system as defined in claim 1 , wherein the first film and the second film are comprised of a polyester claim 1 , a polypropylene claim 1 , a polyethylene claim 1 , an oriented polypropylene claim 1 , a polyvinylidene chloride ...

Electron-Beam Deposition of Striated Composite Layers for High-Fluence Laser Coatings

Striated composite layers are deposited using reactive electron-beam evaporation of hafnium dioxide and silicon dioxide sublayers in a planetary rotation or linear translation system in which the hafnia and silica vapor plumes are present at the same time, and yet the hafnia and silica sublayers are distinct. The resulting StriCom materials exhibit significant improvements in laser-induced damage thresholds, thin-film stresses, environmental sensitivity, and control of refractive indices relative to monolayer hafnia films.

Laminated materials, methods and apparatus for making same, and uses thereof

Systems and methods using PVD for producing materials, for example nitrides, are disclosed. The present application also relates to use of the materials for electrode materials.

PVD BOND COAT

Superalloy workpiece including a superalloy substrate and an interface layer (IF-1) of essentially the same superalloy composition directly on a surface of the superalloy substrate, followed by a transition layer (TL) of essentially the same superalloy and supperalloy oxides or a different metal composition and different metal oxides whereby oxygen content of the transition layer is increasing from IF-1 towards a barrier layer (IF-2) of super alloy oxides or of different metal oxides. 1. Coating method comprising the following steps:providing a superalloy (SA) substrate in a PVD-coating unit;providing a superalloy target as a cathode of an arc source of the coating unit;providing a substrate bias to the substrate;depositing an interface layer (IF-1) of superalloy on a surface of the substrate by vacuum arc deposition from the superalloy target;providing a supply for reactive gas containing oxygen to the coating unit;depositing a transition layer (TL) of the same superalloy or a different metal composition by vacuum arc deposition whereby an oxygen content of the layer is varied from (IF-1) towards the surface by changing a partial pressure of the reactive gas in the process atmosphere;depositing a barrier layer (IF-2) comprising a higher amount of super alloy oxides or of a different metal oxides composition than within the transition layer subsequent to the transition layer by vacuum arc deposition in a process atmosphere containing reactive gas in a higher concentration as with the deposition of the transition layer (TL).2. Coating method according to claim 1 , characterized in that the superalloy target has essentially the same composition as the superalloy.3. Coating method according to claim 1 , characterized in that at least one further target having a further metal composition is provided to deposit the transition layer of a different metal composition and/or the barrier layer (IF-2) of a different metal oxide composition.4. Coating method according to claim ...

IMC EVAPORATOR BOAT ASSEMBLY

An IMC evaporator boat assembly that includes an evaporator boat that has a top surface defining a pool. There is a thermal insulation package that has a thermal insulation body wherein the thermal insulation body contains a cavity. The evaporator boat is removably received within the cavity. The evaporator boat is operatively connected to a heater. 1. An IMC evaporator boat assembly comprising:an evaporator boat, the evaporator boat comprising a top surface defining a pool;a thermal insulation package comprising a thermal insulation body wherein the thermal insulation body contains a cavity;the evaporator boat being removably received within the cavity; andthe evaporator boat being operatively connected to a heater.2. The evaporator boat assembly according to wherein the evaporator boat comprising a side wall and an end wall and a bottom surface.3. The evaporator boat assembly according to wherein the cavity in the thermal insulation package comprising a side wall and a bottom surface.4. The evaporator boat assembly according to wherein when the evaporator boat is received within the cavity of the thermal insulation package claim 3 , the side wall of the evaporator boat contacts the side wall of the thermal insulation package and the bottom surface of the evaporator boat contacts the bottom surface of the thermal insulation package.5. The evaporator boat assembly according to wherein when the evaporator boat is received within the cavity of the thermal insulation package claim 4 , the end wall of the evaporator boat is exposed.6. The evaporator boat assembly according to wherein the evaporator boat comprising a pair of opposite ones of the end walls claim 1 , and a pair of the heaters wherein each heater is electrically connected to the evaporator boat adjacent its corresponding one of the end walls.7. The evaporator boat assembly according to wherein the evaporator boat comprises one of the following intermetallic composites selected from the following group: BN— ...

IMC EVAPORATOR BOAT-THERMAL INSULATION CARTRIDGE ASSEMBLY

An IMC evaporator boat-thermal insulation cartridge assembly that includes an IMC evaporator boat and a thermal insulation cartridge, which has a container containing a thermal insulation body containing a cavity. The IMC evaporator boat is received within the cavity so as to define an air space between the IMC evaporator boat and the thermal insulation body. A heater is contained within the air space. 1. An IMC evaporator boat-thermal insulation cartridge assembly comprising:an IMC evaporator boat;a thermal insulation cartridge comprising a container containing a thermal insulation body containing a cavity;the IMC evaporator boat being received within the cavity so as to define an air space between the IMC evaporator boat and the thermal insulation body; and{'b': '90', 'a heater () contained within the air space.'}2. The IMC evaporator boat-thermal insulation cartridge assembly according to wherein the IMC evaporator boat having a top surface that contains a pool claim 1 , and the IMC evaporator boat having side walls and a bottom surface.3. The IMC evaporator boat-thermal insulation cartridge assembly according to wherein a cavity surface defines the cavity claim 2 , and the cavity surface comprising a frusto-conical cavity section and an arcuate cavity section.4. The IMC evaporator boat-thermal insulation cartridge assembly according to wherein the IMC evaporator boat is received within the cavity claim 3 , the side walls of the IMC evaporator boat contact the frusto-conical cavity section of the cavity surface claim 3 , and the air space being defined between the bottom surface of the IMC evaporator boat and the arcuate cavity section of the cavity surface.5. The IMC evaporator boat-thermal insulation cartridge assembly according to wherein a thermocouple is positioned within the air space.6. The IMC evaporator boat-thermal insulation cartridge assembly according to wherein the IMC evaporator boat having a top surface that contains a pool claim 1 , and the IMC ...

Hard coating film and method for producing same

A hard film whose composition formula satisfies M 1-a-b C a N b , in which M is at least one element selected from Ti, Cr and Al, or is the element and at least one element selected from Group 4 elements except for Ti, Group 5 elements, Group 6 elements except for Cr, Si, Y, and rare earth elements. Atomic ratios of M, C and N satisfy: 0.01≦a≦0.50; 0.10≦b≦0.50; and 0<1-a-b. A ratio y of C-to-C bonding to all C bonding in the film is 0.20 or more.

Method of growing aluminum oxide onto substrates by use of an aluminum source in an environment containing partial pressure of oxygen to create transparent, scratch-resistant windows

A system and process for inter alia coating a substrate such as glass substrate with a layer of aluminum oxide to create a scratch-resistant and shatter-resistant matrix comprised of a thin scratch-resistant aluminum oxide film deposited on one or more sides of a transparent and shatter-resistant substrate for use in consumer and mobile devices such as watch crystals, cell phones, tablet computers, personal computers and the like. The system and process may include a sputtering technique. The system and process may produce a thin window that has a thickness of about 2 mm or less, and the matrix (i.e., the combination of the aluminum oxide film and transparent substrate) may have a shatter resistance with a Young's Modulus value that is less than that of sapphire, i.e., less than about 350 gigapascals (GPa). The thin window has superior shatter-resistant characteristics.

Separator, Method For Preparing Separator And Electrochemical Device Containing Separator

A separator, a method for preparing the separator, and an electrochemical device containing the separator. The separator includes a substrate and an inorganic layer disposed on at least one side of the substrate. The substrate is a porous substrate. The inorganic layer is a dielectric layer containing no binder. The inorganic layer has a thickness of 20 nm to 2000 nm. A mass of the inorganic layer is M1, a mass of the substrate is M2, and M1/M2 is greater than or equal to 0.05 but smaller than or equal to 7.5. An interfacial peeling force between the inorganic layer and the substrate is not smaller than 30 N/m. The interfacial wettability and thermal shrinkage resistance performance of the separator are effectively improved while the separator has a certain mechanical strength. The separator can have favorable mechanical strength and thermal shrinkage percentage and high energy density. 1. A separator , comprisinga substrate with a porous structure, andan inorganic layer disposed on at least one side of the substrate,wherein the inorganic layer is a dielectric layer containing no binder, the inorganic layer has a thickness of 20 nm to 2000 nm, a mass of the inorganic layer is M1, a mass of the substrate is M2, a mass ratio of the inorganic layer to the substrate is M1/M2 and M1/M2 is greater than or equal to 0.05 but smaller than or equal to 7.5, and an interfacial peeling force between the inorganic layer and the substrate is larger than or equal to 30 N/m.2. The separator according to claim 1 , wherein the inorganic layer has a thickness of 50 nm to 1500 nm claim 1 , preferably 100 nm to 1000 nm claim 1 , and more preferably 150 nm to 500 nm.3. The separator according to claim 1 , wherein the inorganic layer is a porous structure of stacked nanoclusters claim 1 , and the inorganic layer has a porosity of 10% to 60%.4. The separator according to claim 1 , wherein the inorganic layer is disposed on at least one surface of the substrate and at least a portion of ...

Coated Article Having A Vivid Color

An article is coated with a coating having a vivid primary color. In a preferred embodiment, the coating comprises a nickel or polymer basecoat layer, and a first color layer comprised of oxygen-rich refractory metal oxycarbides, a second color layer comprising oxygen-rich refractory metal oxycarbides and a top layer of refractory metal oxides.

Vapor Deposition Method For Preparing An Amorphous Lithium Borosilicate

The present invention provides a vapour deposition method for preparing an amorphous lithium borosilicate compound or doped lithium borosilicate compound, the method comprising: providing a vapour source of each component element of the compound, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source of boron and a source of silicon, and, optionally, a source of at least one dopant element; providing a substrate at a temperature of less than about 180° C.; delivering a flow of said lithium, said oxygen, said boron and said silicon, and, optionally, said dopant element, wherein the rate of flow of said oxygen is at least about 8×10m/s; and co-depositing the component elements from the vapour sources onto the substrate wherein the component elements react on the substrate to form the amorphous compound. 1. A vapour deposition method for preparing an amorphous lithium borosilicate compound or doped lithium borosilicate compound , the method comprising:providing a vapour source of each component element of the compound, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source of boron, and a source of silicon, and, optionally, a source of at least one dopant element;providing a substrate at a temperature of less than about 180° C.;{'sup': −8', '3, 'delivering a flow of said lithium, said oxygen, said boron and said silicon, and, optionally, said dopant element, wherein the rate of flow of said oxygen is at least about 8×10m/s; and'}co-depositing the component elements from the vapour sources onto the substrate wherein the component elements react on the substrate to form the amorphous compound;wherein the vapour source of oxygen is vapour source of atomic oxygen.2. The vapour deposition method according to claim 1 , wherein the substrate is provided at a temperature of no greater than about 150° C.3. The vapour deposition method according to claim 1 , wherein the substrate is provided at a ...

CHIP RESISTOR AND METHOD FOR MANUFACTURING THE SAME

A chip resistor includes an upper electrode provided on a substrate, a resistor element connected to the upper electrode, and a side electrode connected to the upper electrode. The side electrode, arranged on a side surface of the substrate, has two portions overlapping with the obverse surface and reverse surface of the substrate, respectively. An intermediate electrode covers the side electrode, and an external electrode covers the intermediate electrode. A first protective layer is disposed between the upper electrode and the intermediate electrode, and held in contact with the upper electrode and the side electrode. The first protective layer is more resistant to sulfurization than the upper electrode. A second protective layer is disposed between the first protective layer and intermediate electrode, and held in contact with the first protective layer, side electrode and intermediate electrode. 1. A chip resistor comprising:a substrate having a first surface, a second surface and a side surface, the first and the second surfaces being spaced apart from each other in a thickness direction of the substrate, the side surface being located between the first surface and the second surface;an upper electrode provided on the first surface of the substrate;a resistor element arranged on the first surface of the substrate and electrically connected to the upper electrode;a side electrode electrically connected to the upper electrode and has a first, a second and a third portion, the first portion being arranged on the side surface of the substrate, the second portion and the third portion overlapping with the first surface and the second surface in the thickness direction, respectively;an intermediate electrode covering the side electrode;an external electrode covering the intermediate electrode;a first protective layer located between the upper electrode and the intermediate electrode, the first protective layer being in contact with the upper electrode and the side ...

MANUFACTURING METHOD OF ESD PROTECTION DEVICE

A manufacturing method of the ESD protection device includes the following steps. A surface treatment is performed on the substrate. A link layer is formed on the substrate after the surface treatment, wherein a material of the link layer includes a metal material. A progressive layer is formed on the link layer, wherein a material of the progressive layer includes a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer. A composite layer is formed on the progressive layer, wherein the composite layer includes a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×10to 1×10Ω/sq. 1. A manufacturing method of an ESD protection device comprising the following steps:A. performing a surface treatment on a substrate;B. forming a link layer on the substrate after the surface treatment, wherein a material of the link layer comprises a metal material;C. forming a progressive layer on the link layer, wherein a material of the progressive layer comprises a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer; and{'sup': 7', '8, 'D. forming a composite layer on the progressive layer, wherein the composite layer comprises a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×10Ω/sq to 1×10Ω/sq.'}2. The manufacturing method of the ESD ...

LIGHT FILTER COATING AND METHOD OF PRODUCTION

The present disclosure provides methods of applying a filtering coating to a substrate, comprising: depositing a solution on a surface of a substrate, wherein the solution comprises an organic solvent with nanorods dispersed within the solvent. Evaporation of the solution is allowed and/or controlled to increase a volume fraction of the nanorods in the solution as a function of the evaporation. Thus, an aligned deposit of the nanorods is provided as a function of the evaporation, wherein the aligned deposit of nanorods includes at least thousands of the nanorods with at least a majority of the nanorods aligned relative to a length of the nanorods. 1. A method of applying a filtering coating to a substrate , comprising:depositing a solution on a surface of a substrate, wherein the solution comprises an organic solvent with nanorods dispersed within the solvent, wherein the nanorods comprise cadmium selenide (CdSe) nanorods;allowing evaporation of the solution to increase a volume fraction of the nanorods in the solution as a function of the evaporation; andproviding an aligned deposit of the nanorods, as a function of the evaporation, wherein the aligned deposit of nanorods comprises at least thousands of the nanorods with at least a majority of the nanorods aligned relative to a length of the nanorods.2. The method of claim 1 , wherein the nanorods comprise less than 4% by weight of the solution.3. The method of claim 1 , wherein the organic solvent comprises methylcyclohexane.4. The method of claim 3 , wherein the providing the aligned deposit of the nanorods comprises achieving alignment of the nanorods in less than 10 minutes from deposition of the solution on the surface per 0.10 ml of solution deposited on the substrate.5. The method of claim 4 , wherein the nanorods comprise nanorods having an average aspect ratio greater than 4 claim 4 , wherein an aspect ratio of each nanorod is defined by a length of the nanorod divided by a width of the nanorod.6. The ...

Ion Source Enhanced AlCrSiN Coating with Gradient Si Content and Gradient Grain Size

An ion source enhanced AlCrSiN coating for a cutting tool is provided. The ion source enhanced AlCrSiN coaling has gradient Si content and grain size, including sequentially an AlCrSiN working layer, an interlayer and an AlCrN bottom layer in order from a surface of the coating to a substrate, wherein from the AlCrN bottom layer to the AlCrSiN working layer, Si content in the interlayer is gradually increased, and the interlayer has a texture that changes from coarse columnar crystals to fine nanocrystals and amorphous body. A texture of the coating, in which the grain size is gradually decreased, sequentially includes coarse columnar crystals, fine columnar crystals and fine equiaxed crystals. A method for preparing the ion source enhanced AlCrSiN coating with the gradient Si content and grain size is provided as well as a cutting tool having the coating deposited thereon. 1. An ion source enhanced AlCrSiN coating with a gradient Si content and a gradient grain size , comprising sequentially an AlCrSiN working layer , an interlayer and an AlCrN bottom layer in order from a surface of the ion source enhanced AlCrSiN coating to a substrate , wherein from the AlCrN bottom layer to the AlCrSiN working layer , the Si content in the interlayer is gradually increased , and the interlayer comprises a texture changing from coarse columnar crystals to fine nanocrystals and amorphous body , the texture sequentially comprises coarse columnar crystals , fine columnar crystals and fine equiaxed crystals , the grain size of the interlayer is gradually decreased , in the interlayer , the Si content is gradually increased from 1 wt. % to 5 wt. % , and the grain size is gradually decreased from 60 nm to 20 nm.2. (canceled)3. The ion source enhanced AlCrSiN coating with the gradient Si content and the gradient grain size according to claim 1 , wherein Cr in the ion source enhanced AlCrSiN coating is completely or partially replaced by Ti to obtain an AlTiSiN coating or an AlCrTiSiN ...

Arrangement for coating substrate surfaces by means of electric arc discharge

The invention relates to an arrangement for coating substrate surfaces by means of electric arc discharge in a vacuum chamber, wherein electric arc discharges between a target (1) which is electrically connected as a cathode and is formed from a metal material are used. Arranged at a distance from the target (1) is an anode (2), with which the electric arc discharges are ignited to form a plasma formed with metal material of the target (1). The target (1) is connected to a first electric power source (3) and the anode (2) to a second electric power source (4), wherein the absolute values of the electric voltages connected to the target (1) and to the anode (2) different from one another.

WAVELENGTH SELECTIVE HEAT RADIATION MATERIAL SELECTIVELY RADIATING HEAT RADIATION LIGHT CORRESPONDING TO INFRARED RAY TRANSMISSION WAVELENGTH REGION OF RESIN MEMBER AND METHOD FOR MANUFACTURING THE SAME

An object is to provide a method for manufacturing a wavelength selective heat radiation material in which a surface roughness of an upper portion of a cavity wall defining each microcavity is suppressed or in which microcavities each having an aspect ratio larger than 3.0 are formed. For the wavelength selective heat radiation material, a base material having a mask having predetermined openings tightly adhered to a surface thereof, or a base material in which depressions are previously formed on one surface thereof by pressing a die having projections arrayed so as to correspond to positions of microcavities thereagainst, is subjected to anisotropic etching, thereby providing a wavelength selective heat radiation material in which the surface roughness of the upper portion of the cavity wall defining each of the microcavities is suppressed or a wavelength selective heat radiation material having microcavities whose each aspect ratio is larger than 3.0. 121.-. (canceled)22. A wavelength selective heat radiation material for selectively radiating heat radiation light corresponding to an infrared ray transmission wavelength region of a resin member , the wavelength selective heat radiation material selectively radiating the heat radiation light by being placed so as to allow the heat radiation light to pass through , the heat radiation light passing through the resin member after passing through the wavelength selective heat radiation material ,the wavelength selective heat radiation material having a heat radiation surface, the heat radiation surface having a multitude of microcavities formed therein, the microcavities having rectangular openings being periodically repeated and being two-dimensionally arrayed in a grating-like manner, andthe microcavities each having an opening ratio a/Λ (a: opening size, Λ: opening period) in a range of 0.5 to 0.9, each having an aspect ratio d/a (d: opening depth, a: opening size) of 3.3 or more, and each having 1 μm or less of a ...

EVAPORATION APPARATUS FOR DEPOSITING MATERIAL ON A FLEXIBLE SUBSTRATE AND METHOD THEREFORE

An evaporation apparatus () for depositing material on a flexible substrate () supported by a processing drum () is provided. The evaporation apparatus includes: a first set () of evaporation crucibles aligned in a first line () along a first direction for generating a cloud () of evaporated material to be deposited on the flexible substrate (); and a gas supply pipe () extending in the first direction and being arranged between an evaporation crucible of the first set () of evaporation crucibles and the processing drum (), wherein the gas supply pipe () includes a plurality of outlets () for providing a gas supply directed into the cloud of evaporated material, and wherein a position of the plurality of outlets is adjustable for changing a position of the gas supply directed into the cloud of evaporated material. 1. An evaporation apparatus for depositing material on a flexible substrate supported by a processing drum , the evaporation apparatus comprising:a first set of evaporation crucibles aligned in a first line along a first direction for generating a cloud of evaporated material to be deposited on the flexible substrate; anda gas supply pipe extending in the first direction and being arranged between an evaporation crucible of the first set of evaporation crucibles and the processing drum,wherein the gas supply pipe comprises a plurality of outlets for providing a gas supply directed into the cloud of evaporated material, andwherein a position of the plurality of outlets is adjustable for changing a position of the gas supply directed into the cloud of evaporated material.2. The evaporation apparatus according to claim 1 , wherein the first line of the first set of evaporation crucibles is defined through the center of at least two of the evaporation crucibles in the first set of evaporation crucibles claim 1 , wherein the position of the gas supply is adjustable in a second direction being different from the first direction claim 1 , and wherein the second ...

DURABLE 3D GEOMETRY CONFORMAL ANTI-REFLECTION COATING

Methods and systems for depositing a thin film are disclosed. The methods and systems can be used to deposit a film having a uniform thickness on a substrate surface that has a non-planar three-dimensional geometry, such as a curved surface. The methods involve the use of a deposition source that has a shape in accordance with the non-planar three-dimensional geometry of the substrate surface. In some embodiments, multiple layers of films are deposited onto each other forming multi-layered coatings. In some embodiments, the multi-layered coatings are antireflective (AR) coatings for windows or lenses.

MASK PLATE ASSEMBLY

A mask plate assembly for evaporation is provided, which includes matching mask plates forming a complete set. Each mask plate includes a main body and an opening region, and the opening region is provided with a block portion, at least one connector, and an evaporation zone. The connector is connected to the main body and the block portion. A size of the connector of one of the at least two mask plates is the same as a size of the evaporation zone of the other mask plate and the positions of the connector and the evaporation zone thereof are overlapped. The evaporation zones in the at least two mask plates are matched each other. 1. A mask plate assembly for evaporation , comprising at least two mask plates forming a complete set , the mask plate comprising:a main body;an opening region, in which is provided with a block portion, at least one connector, and an evaporation zone;wherein the connector is connected to the main body and the block portion;wherein a size of the connector of one of the at least two mask plates is the same as a size of the evaporation zone of the other mask plate and the positions of the connector and the evaporation zone thereof are overlapped, the evaporation zone of at least two mask plates are matched each other, the at least two mask plates each are one-piece structure, and the block portion, the connector, and the evaporation zone in each of the at least two mask plates are formed by the same etching process.2. The mask plate assembly according to claim 1 , wherein the mask plate assembly includes a first mask plate and a second mask plate.3. The mask plate assembly according to claim 2 , wherein the first mask plate forms a first connector claim 2 , a second connector claim 2 , a third connector and a fourth connector in the opening region thereof.4. The mask plate assembly according to claim 3 , wherein each of the first connector claim 3 , the second connector claim 3 , the third connector claim 3 , and the fourth connector has one ...

PROTECTIVE METAL OXY-FLUORIDE COATINGS

An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of MOF, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%. 1. A thin film comprising:{'sub': x', 'y', 'z, 'a metal oxy-fluoride having an empirical formula of MOF, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x;'}wherein the thin film has a thickness of 1 to 30 microns and a porosity of less than 0.1%.2. The thin film of claim 1 , wherein the metal comprises at least one of yttrium claim 1 , gadolinium claim 1 , aluminum claim 1 , cerium claim 1 , dysprosium claim 1 , zirconium claim 1 , calcium claim 1 , magnesium claim 1 , erbium claim 1 , lanthanum claim 1 , neodymium claim 1 , ytterbium or strontium.3. The thin film of claim 1 , wherein the thin film coats at least one surface of a chamber component for semiconductor processing equipment.4. The thin film of claim 1 , wherein the metal has a valence of 2 and the metal oxy-fluoride comprises approximately 37-48 at. % of the metal claim 1 , approximately 10-43 at. % oxygen claim 1 , and approximately 10-53 at. % fluorine.5. The thin film of claim 1 , wherein the metal has a valence of 3 and the metal oxy-fluoride comprises approximately 27-38 at. % of the metal claim 1 , approximately 10-52 at. % oxygen claim 1 , and approximately 10-63 at. % fluorine.6. The thin film of claim 1 , wherein the metal has a valence of 4 and the metal oxy-fluoride comprises approximately 22-32 at. % of the metal claim 1 , approximately 10-58 at. % oxygen claim 1 , and approximately 10-68 at. % fluorine.7. A method comprising:{'sub': x', 'y', '_', 'source', 'z', '_', 'source, 'providing a metal oxy-fluoride source material having ...

LCD AND ORGANIC EL DISPLAY

A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO(ZnO)(wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm/(V·sec) and an electron carrier concentration is less than 10/cm, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer. 1. A Liquid Crystal Display (LCD) including:a substrate; andswitching elements formed on the substrate;wherein the substrate is one of a glass substrate, a plastic substrate or a plastic film, and a gate terminal formed over the substrate;', 'a gate insulating film formed on the gate terminal;', 'an amorphous oxide channel layer formed on the gate insulating film, the amorphous oxide channel layer including In, Ga, Zn and O;', 'a drain terminal formed on the amorphous oxide channel layer, the drain terminal partially overlapping with the gate terminal; and', 'a source terminal formed on the amorphous oxide channel layer and apart from the drain terminal, the source terminal partially overlapping with the gate terminal., 'wherein each of the switching elements comprises a thin film transistor comprising2. The LCD according to claim 1 , wherein the switching element is operable in a normally off type.3. The LCD according to claim 1 , wherein the amorphous oxide channel layer is formed such that an electron mobility of the amorphous oxide channel layer increases with an electron carrier concentration of the amorphous oxide channel layer.4. The LCD according to claim 1 , wherein each thin film transistor further comprises a top-gate structure.5. The LCD according to claim 1 , ...

Vapour deposition method for preparing crystalline lithium-containing compounds

A vapour deposition method for preparing a crystalline lithium-containing transition metal oxide compound comprises providing a vapour source of each component element of the compound, including at least a source of lithium, a source of oxygen, and a source or sources of one or more transition metals; heating a substrate to between substantially 150° C. and substantially 450° C.; and co-depositing the component elements from the vapour sources onto the heated substrate wherein the component elements react on the substrate to form the crystalline compound.

Electrode material

A system which includes two electrodes for use as cathode and anode, respectively, can perform water electrolysis. Each of the two electrodes includes a self-supporting electrode material containing a porous core material and a coating material. The porous core material includes carbon, and the coating material contains a transition metal phosphide. The two electrodes include identical electrode material, and each of the electrodes contains a connector to connect to a power source. 1. A system for water electrolysis , comprising:two electrodes for use as cathode and anode, respectively,wherein each of the two electrodes comprises a self-supporting electrode material comprising a porous core material and a coating material,wherein the porous core material comprises carbon,wherein the coating material comprises a transition metal phosphide,wherein the two electrodes comprise identical electrode material, andwherein each of the electrodes can be connected to a power source.2. The system for water electrolysis according to claim 1 , further comprising:a power source for providing a driving voltage to the two electrodes.3. The system for water electrolysis according to claim 1 , whereinthe porous core material has a maximum average pore size of 1 mm or below.4. The system for water electrolysis according to claim 1 , whereinthe transition metal phosphide is in the form of nanoparticles having an extent in a range of 5 to 500 nm along at least one longitudinal axis.5. The system for water electrolysis according to claim 1 , whereinthe porous core material is in the form of a foam, a paper, or a fabric.6. The system for water electrolysis according to claim 1 , whereinthe transition metal phosphide comprises at least one transition metal selected from the group consisting of nickel, cobalt, iron, copper, molybdenum, and manganese.7. The system for water electrolysis according to claim 1 , wherein{'sub': 3', '12', '5', '2', '5', '4', '2', '12', '5', '2', '2', '3', '2', '2', ...

AlON COATED SUBSTRATE WITH OPTIONAL YTTRIA OVERLAYER

A fluorine plasma resistant coating on a substrate being a component in a semiconductor manufacturing system is disclosed. In one embodiment the composition includes an AlON coating that overlies a substrate, and an optional yttria coating layer that overlies the AlON coating, with a total coating thickness of about 5-6 microns.

Vapor deposition bearing coating

A method of providing electrical discharge machining protection for a bearing is provided. The method includes (a) providing a bearing ring, (b) ionizing pure aluminum and depositing a pure aluminum layer on at least a portion of the bearing ring, (c) immersing the bearing ring in acid to convert the pure aluminum layer to an aluminum oxide layer, and (d) immersing the bearing ring in deionized water to seal the aluminum oxide layer.

Esd protection composite structure, esd protection device, and manufacturing method thereof

An ESD protection composite structure includes a link layer, a progressive layer, and a composite layer. The link layer is used for disposing the ESD protection composite structure on a substrate, wherein a material of the link layer includes a metal material. The progressive layer is disposed on the link layer, wherein the material of the progressive layer includes a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer. The composite layer is disposed on the progressive layer, wherein the composite layer includes a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×10 7 Ω/sq to 1×10 8 Ω/sq.

OLEFIN SEPARATOR FREE LI-ION BATTERY

Implementations of the present disclosure generally relate to separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, and methods for fabricating the same. In one implementation, a method of forming a separator for a battery is provided. The method comprises exposing a metallic material to be deposited on a surface of an electrode structure positioned in a processing region to an evaporation process. The method further comprises flowing a reactive gas into the processing region. The method further comprises reacting the reactive gas and the evaporated metallic material to deposit a ceramic separator layer on the surface of the electrode structure. 1. A method of forming an electrode structure , comprising:exposing a metallic material to be deposited over a surface of a lithium metal layer formed on a negative electrode structure positioned in a processing region to an evaporation process to form an evaporated metallic material; exposing oxygen to water vapor to form moist oxygen; and', 'introducing the moist oxygen into the processing region; and, 'flowing a reactive gas into the processing region, comprisingreacting the reactive gas and the evaporated metallic material to deposit a ceramic layer on the surface of the lithium metal layer.2. The method of claim 1 , wherein the metallic material is selected from the group consisting of: aluminum (Al) claim 1 , silver (Ag) claim 1 , chromium (Cr) claim 1 , copper (Cu) claim 1 , indium (In) claim 1 , iron (Fe) claim 1 , magnesium (Mg) claim 1 , nickel (Ni) claim 1 , tin (Sn) claim 1 , ytterbium (Yb) claim 1 , or a combination thereof.3. The method of claim 1 , wherein the ceramic layer is an aluminum hydroxide oxide layer.4. The method of claim 1 , wherein the evaporation process is a thermal evaporation process or an electron beam evaporation process.5. The method of claim 1 , wherein the evaporation process comprises exposing the metallic ...

MAGNETIC RECORDING MEDIUM

The average thickness tof a magnetic recording medium meets the requirement that t≤5.5 [μm], and the dimensional change amount Δw in the width direction of the magnetic recording medium with respect to the tension change in the longitudinal direction of the magnetic recording medium meets the requirement that 700 ppm/N≤Δw. 1. A magnetic recording medium ,{'sub': T', 'T, 'wherein an average thickness tmeets the requirement that t≤5.5 [μm], and'}a dimensional change amount Δw in a width direction with respect to a tension change in a longitudinal direction meets the requirement that 700 [ppm/N]≤Δw.2. The magnetic recording medium according to claim 1 , wherein the dimensional change amount Δw meets the requirement that 750 [ppm/N]≤Δw.3. The magnetic recording medium according to claim 1 , wherein the dimensional change amount Δw meets the requirement that 800 [ppm/N]≤Δw.4. The magnetic recording medium according to claim 1 , wherein a temperature expansion coefficient α meets the requirement that 6 [ppm/° C.]≤α≤8 [ppm/° C.] claim 1 , and a humidity expansion coefficient β meets the requirement that β≤5 [ppm /% RH].5. The magnetic recording medium according to claim 1 , wherein a Poisson's ratio ρ meets the requirement that 0.3≤ρ.6. The magnetic recording medium according to claim 1 , wherein an elastic limit value σin the longitudinal direction meets the requirement that 0.8 [N]≤σ.7. The magnetic recording medium according to claim 6 , wherein the elastic limit value σis independent of a speed V for elastic limit measurement.8. The magnetic recording medium according to claim 1 , further comprising a recording layer that is a sputtered layer.9. The magnetic recording medium according to claim 8 , wherein an average thickness tof the recording layer meets the requirement that 9 [nm]≤t≤90 [nm].10. The magnetic recording medium according to claim 1 , further comprising a vertically oriented recording layer.11. The magnetic recording medium according to claim 1 , further ...

FILM-FORMATION METHOD

Provided is a film-formation method for a surface layer having high mechanical strength and a low refractive index. A step of film formation from a vapor deposition material by a vacuum vapor deposition method and a step of film formation by sputtering of a target constituent substance are repeated for the surfaces of substrates (S), thereby forming films with a lower refractive index than that of a film-forming material. 111-. (canceled)12. A film-formation method comprising:repeating, for a surface of a substrate, a step of film formation from a vapor deposition material by a vacuum vapor deposition method and a step of film formation by sputtering of a target constituent substance, thereby forming a film with a lower refractive index than that of a film-forming material,wherein a ratio of a film weight obtained by the sputtering to a total film weight obtained is 0.2% to 2.1%.13. A film-formation method comprising:repeating, for a surface of a substrate, a step of film formation from a vapor deposition material by a vacuum vapor deposition method and a step of film formation by sputtering of a target constituent substance, thereby forming a film with a lower refractive index than that of a film-forming material,{'sub': '2', 'wherein the film-forming material is MgFand the film is formed with a refractive index of less than 1.38.'}14. The film-formation method according to claim 12 , wherein the film-forming material is SiOand the film is formed with a refractive index of less than 1.46.15. The film-formation method according to claim 12 , wherein the film-forming material is MgFand the film is formed with a refractive index of less than 1.38.16. The film-formation method according to claim 14 , wherein the film is formed with a refractive index of 1.41 or less.17. The film-formation method according to claim 16 , wherein the film is formed with a pencil hardness of B or higher.18. The film-formation method according to claim 13 , wherein a film weight obtained by ...

Cutting tool and method for manufacturing same

A cutting tool includes: a substrate; and a coating film formed on the substrate, wherein the coating film includes a first layer formed on the substrate, and a second layer formed on the first layer, the first layer is composed of a boride including titanium as a component element, and the second layer is composed of a nitride including zirconium as a component element.

Multi-layer material for anti-erosion and anti-abrasion coating

The present invention relates to a multi-layer material intended particularly for making an anti-erosion and anti-abrasion coating, as well as to the method for fabricating such multi-layer material. The aim of the invention is to make a material which is more resistant and which may be deposited at low temperatures. This goal is reached by providing a multi-layer material characterized in that it is comprised of a substrate (2) covered with at least one ductile layer (4) of metal tungsten and at least one hard layer (6) of a solid solution of a deposit element selected among carbon, nitrogen, or a mixture of carbon and nitrogen in tungsten or in tungsten alloy, both types of layers (4 or 6) being alternated. The invention relates more particularly to the making of a coating for parts used in aeronautics.

Amorphous oxide and thin film transistor

An amorphous oxide and a thin film transistor using the amorphous oxide. More specifically, an amorphous oxide having an electron carrier concentration of less than 1018/cm3 and a thin film transistor using the amorphous oxide. The thin film transistor is provided with a source electrode (6), a drain electrode (5), a gate electrode (4), a gate insulating film (3) and a channel layer (2). As the channel layer (2), the amorphous oxide having an electron carrier concentration of less than 1018/cm3 is used.

Wire-grid polarizer manufacturing method and liquid-crystal display device

Disclosed is a method for manufacturing a wire-grid polarizer that has a high degree of polarization and a high transmittance of p-polarized light. One surface of said wire-grid polarizer has a high transmittance of s-polarized light and the other surface has a low transmittance of s-polarized light. Also disclosed is a high-brightness liquid-crystal display device that exhibits reduced contrast loss. In the disclosed wire-grid polarizer (10), a plurality of ridges (12) are formed at a prescribed pitch, parallel to each other with intervening flat areas (13), on the surface of a light-transmitting substrate (14). The wire-grid polarizer (10) is also provided with first coating layers (20), each comprising a metal layer (22) and a metal oxide layer (21), on first surfaces (16) of the ridges (12). The maximum thickness of each coating layer (20) within the section from the base of that ridge (12) to the half-height point of that ridge (12) is less than the maximum thickness of that coating layer (20) within the section from the half-height point of that ridge (12) to the apex (19) of that ridge. In the disclosed method for manufacturing the aforementioned wire-grid polarizer (10), aluminum is deposited to form the metal layers (22), and to form the metal oxide layers (21), aluminum is deposited in the presence of oxygen such that oxygen vacancies occur in said metal oxide layers (21).

抗高温循环氧化的厚Ti／TiAlYN多层涂层及其制备方法

本发明涉及高温防护涂层领域，具体为一种抗高温循环氧化的厚Ti/TiAlYN多层涂层及其制备方法。该Ti/TiAlYN多层涂层的制备方法包括基体清洗、TiAlYN子层和Ti子层交替沉积以及最外层TiAlYN子层沉积，利用多靶材先后沉积的方式，在TC4基体上交替沉积TiAlYN子层和Ti子层，沉积于基体和最外层均为TiAlYN子层。该Ti/TiAlYN多层涂层具有优异的抗高温循环氧化性能，并具有高韧性的优点，涂层的子层厚度容易控制且可控范围大，工艺简单。

Method to deposit electrically insulating layers

FIELD: electricity. SUBSTANCE: invention relates to the method for operation of an arc source, besides, the electric spark discharge is ignited and controlled on the surface of a target (5), and the spark gap is controlled simultaneously by DC, with comparable DC voltage DV, and pulse current generated by means of periodically applied voltage signal. At the same time the voltage on the arc source is increased within several microseconds, and the shape of the voltage signal is substantially freely chosen. EFFECT: increased voltage of a spark gap. 21 cl, 5 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 510 097 (13) C2 (51) МПК H01J 37/32 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2010123193/07, 29.02.2008 (24) Дата начала отсчета срока действия патента: 29.02.2008 (72) Автор(ы): РАММ Юрген (CH), ВОЛЬРАБ Кристиан (AT) (43) Дата публикации заявки: 20.12.2011 Бюл. № 35 2 5 1 0 0 9 7 (45) Опубликовано: 20.03.2014 Бюл. № 8 (56) Список документов, цитированных в отчете о поиске: EP 0666335 A1, 09.08.1995. WO 2006099754 A, 28.09.2006. WO 2006099758 A, 28.09.2006. EP 0729173 A1, 28.08.1996. RU 2246719 C1, 20.02.2005. 2 5 1 0 0 9 7 R U (86) Заявка PCT: EP 2008/052521 (29.02.2008) C 2 C 2 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 08.06.2010 (87) Публикация заявки РСТ: WO 2009/059807 (14.05.2009) Адрес для переписки: 129090, Москва, ул. Б. Спасская, 25, стр.3, ООО "Юридическая фирма Городисский и Партнеры" (54) СПОСОБ ОСАЖДЕНИЯ ЭЛЕКТРИЧЕСКИ ИЗОЛИРУЮЩИХ СЛОЕВ (57) Реферат: Изобретение относится к способу эксплуатации источника дуги, причем электрический искровой разряд поджигается и управляется на поверхности мишени (5), и искровой разряд управляется одновременно постоянным током, которому сопоставлено постоянное напряжение DV, и вырабатываемым посредством периодически прикладываемого сигнала напряжения импульсным током. При этом напряжение на источнике дуги повышается за несколько микросекунд, ...

Thin layer structure (THIN-LAYEREDSTRUCTURE)

フツ化物被膜の形成方法

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

高硬度鋼の高速切削加工できわめて優れた仕上げ面精度を長期にわたって発揮する表面被覆立方晶窒化ほう素基超高圧焼結材料製切削工具

Coated cemented carbide insert, method of making this and its use in milling cast iron

Low stress hard coatings and applications thereof

In one aspect, coated cutting tools are described herein comprising a substrate and a coating comprising a refractory layer deposited by physical vapor deposition adhered to the substrate, the refractory layer comprising M 1-x Al x N wherein x≧0.68 and M is titanium, chromium or zirconium, the refractory layer including a cubic crystalline phase and having hardness of at least 25 GPa.

Polycrystalline supperlattice coated substrate and method/apparatus for making same

The present invention provides a coated article comprising a substrate that can be non-crystalline or crystalline such as a polycrystalline engineering material, having advantageous mechanical properties and a superlattice-type protective composite coating on the substrate. The composite coating comprises a plurality of vapor deposited, ion bombarded, polycrystalline layers of different adjacent compositions formed one atop the other in lamellar manner. The polycrystalline layers have sufficiently thin individual layer thicknesses (e.g. not exceeding about 150 nanometers) and sufficiently distinct and different compositions proximate their interfaces despite being ion bombarded as to constitute superlattice layers that exhibit a collective hardness exceeding the hardness of any individual layer material in homogenous or bulk form. The composite coating is ion bombarded to an extent that the individual layers are substantially free of intragranular voids without adversely affecting the compositional modulation of the superlattice layers. Moreover, the composite coating can have planar or non-planar interlayer interfaces and still exhibit substantially improved hardness.

Method for deposition of system of transparent barrier layers

FIELD: technological processes. SUBSTANCE: invention relates to a method of multilayer barrier coating in form of a system of transparent layers. Deposition is carried out in vacuum chamber on a transparent polymer film at least two transparent barrier layers and one located between said two barrier layers transparent intermediate layer. Deposition of barrier layers is performed by evaporation of aluminium, wherein simultaneously in a vacuum chamber is supplied at least one first jet gas. Intermediate layer is deposited by evaporation of aluminium, wherein simultaneously in a vacuum chamber is supplied at least one second reactive gas and one gaseous or vaporous organic component. EFFECT: production of multilayer barrier coating in form of a system of transparent layers of coating having high barrier action with respect to oxygen and steam. 7 cl, 1 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК C23C 14/06 C23C 14/24 C23C 16/30 C23C 16/452 (13) 2 590 745 C2 (2006.01) (2006.01) (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2013136554/02, 15.02.2012 (24) Дата начала отсчета срока действия патента: 15.02.2012 Приоритет(ы): (30) Конвенционный приоритет: (43) Дата публикации заявки: 10.02.2015 Бюл. № 4 (45) Опубликовано: 10.07.2016 Бюл. № 19 C 2 C 2 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 05.08.2013 (86) Заявка PCT: 2 5 9 0 7 4 5 EP 2012/052537 (15.02.2012) R U 2 5 9 0 7 4 5 (56) Список документов, цитированных в отчете о поиске: Fahland М. et. al. Permeation barrier properties of thin oxide films on flexible polymer substrates, Thin solid films, 01.01.2007, с.3076, 3077. RU 2352683 C2, 20.04.2009. WO 2005073427 A2, 11.08.2005 . WO 2007072120 A1, 28.06.2007. Schiller S. et. al. PVD coating of plastic webs and sheets with high rates on large areas, Surface and coatings technology, 01.03.2000, с. 354-355. (73) Патентообладатель(и): ФРАУНХОФЕР-ГЕЗЕЛЛЬШАФТ ЦУР ФЕРДЕРУНГ ДЕР ...

Thin layer depositing apparatus

A thin layer depositing apparatus comprising a reaction vessel for putting therein substrates to be provided with a desired thin layer and a gas accelerating nozzle positioned at a desired portion of the reaction vessel so that reactive gas is introduced in the reaction vessel through the gas accelerating nozzle.

一种四元单层超硬薄膜材料及其制备方法

本发明提供了一种四元单层超硬薄膜材料及其制备方法，属于金属材料表面改性和机械加工技术领域。一种Zr‑Al‑O‑N四元单层超硬薄膜材料和利用电弧离子镀技术在工模具材料表面制备该薄膜的方法。该材料的成分设计依据化学键合及电子能带结构理论，遵循共价性耦合能带理论来完成；该制备方法利用电弧离子镀设备并通过分离靶弧流调控及氮、氧分压调控来进行，可沉积合成原材料简单、成本低、却硬度高于40GPa的耐磨损、抗腐蚀和抗氧化性能良好的高性价比Zr‑Al‑O‑N四元单层薄膜。该方法沉积速度快、生产效率高、操作简单、利于批量生产，特别适于机械加工技术领域。

锆合金表面氧化锆/氮化铬复合膜及其制备方法与应用

本发明提供一种锆合金表面氧化锆/氮化铬复合膜及其制备方法与应用。所述的复合膜由氧化锆和氮化铬组成，其中氧化锆的厚度为5~20μm，氮化铬的厚度为1~4μm。先采用微弧氧化技术在锆合金表面原位生长一层氧化锆膜，电解液为含有硅酸钠、氢氧化钾和甘油的水溶液；再采用浸没式等离子体沉积技术在氧化锆膜的多孔状外层上沉积一层氮化铬膜，靶材为铬，工作气体为氮气。本发明主要解决了现有技术在锆合金表面制备抗腐蚀膜的效率低、性能提升幅度有限，易引入杂质元素等问题。

一种周期性多层纳米结构AlTiN/AlCrSiN硬质涂层及其制备方法和应用

本发明属于材料涂层领域，公开了一种周期性多层纳米结构AlTiN/AlCrSiN硬质涂层及其制备方法和应用。制备时先沉积AlTi结合层，活化金属基体，再沉积约1μm厚的AlTiN过渡层，为多层结构提供支撑；最后沉积AlTiN/AlCrSiN功能层。多层结构中，AlCrSiN层以AlTiN层为模板，通过共格生长表现为面心立方结构。AlCrSiN层由AlCrN和非晶Si 3 N 4 组成，形成非晶Si 3 N 4 包覆AlCrN纳米晶的复合结构。纳米晶体的强化效应及非晶区域限制了晶粒的滑移和转动，对纳米晶的晶界起到强化作用，同时AlTiN/AlCrSiN纳米多层结构细化了柱状晶尺寸，提升涂层的力学与耐磨减摩性能。

功能梯度的类金刚石碳薄膜及其制备方法和制品

本发明涉及一种功能梯度的类金刚石碳薄膜及其制备方法和制品。该功能梯度的类金刚石碳薄膜的制备方法包括：(1)通过空心阴极电子束辅助脉冲偏压多弧离子镀在工件的表面沉积金属基底层；(2)通过空心阴极电子束辅助脉冲偏压多弧离子镀在所述金属基底层的表面沉积金属氮化物过渡层；(3)通过脉冲偏压离子束辅助磁控溅射在所述金属氮化物过渡层的表面沉积金属碳‑氮化物梯度层；(4)通过脉冲偏压离子束辅助磁控溅射在所述金属碳‑氮化物梯度层的表面沉积所述类金刚石碳装饰层。本发明提供的制备方法制得的类金刚石碳薄膜具有高光泽度、高界面结合强度、高表面硬度的优点，并且耐磨损、耐腐蚀、防刮花性能优良。

Insert for milling of cast iron

본 발명은 구상 주철 (NCI), 회주철 (GCI), 오스템퍼드 연성 철 (ADI) 및 강화 흑연강 주철 (CGI) 와 같은 주철의 습식 또는 건식 기계가공용 코팅된 초경합금 밀링용 인서트에 관한 것으로, 이 인서트는 균열에 대한 높은 내마모성과 훌륭한 저항성을 갖춘 것으로서, The present invention relates to coated cemented carbide milling inserts for wet or dry machining of cast iron such as spherical cast iron (NCI), gray cast iron (GCI), Austenford ductile iron (ADI) and reinforced graphite cast iron (CGI) Has high abrasion resistance and excellent resistance to cracking, - 5 - 7 wt-%의 Co, 140 - 250ppm의 Ti + Ta 및 밸런스 WC를 포함하고, Ti/Ta의 무게비는 0.8 - 1.3인 기재, - 5 - 7 wt-% Co, 140-250 ppm Ti + Ta and balance WC, the weight ratio of Ti / Ta being 0.8 - 1.3, - x=0.5 - 0.7 이고 두께가 1 ㎛ - 10 ㎛인 Al x Ti 1 - x N으로 구성되는 PVD 층을 포함한다. - a PVD layer consisting of Al x Ti 1 - x N with x = 0.5 - 0.7 and a thickness of 1 탆 - 10 탆. 본 발명은 또한 절삭 공구 인서트를 제조하는 방법에 관한 것이다. The present invention also relates to a method of manufacturing a cutting tool insert.

ПОКРЫТИЕ НА ОСНОВЕ AlCrN, ОБЕСПЕЧИВАЮЩЕЕ ПОВЫШЕННУЮ УСТОЙЧИВОСТЬ К КРАТЕРНОМУ ИЗНОСУ

РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2017 126 262 A (51) МПК C23C 14/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2017126262, 03.12.2015 (71) Заявитель(и): ЁРЛИКОН СЕРФИС СОЛЬЮШНС АГ, ПФЕФФИКОН (CH) Приоритет(ы): (30) Конвенционный приоритет: 22.12.2014 DE 102014018915.5 03 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 24.07.2017 EP 2015/078553 (03.12.2015) (87) Публикация заявки PCT: WO 2016/102170 (30.06.2016) A Адрес для переписки: 105082, Москва, Спартаковский пер., 2, стр. 1, секция 1, этаж 3, ЕВРОМАРКПАТ R U (57) Формула изобретения 1. Покрытие (210), нанесенное на поверхность подложки (201), содержащее многослойную пленку (216), состоящую из группы слоев А и группы слоев В, нанесенных чередующимися друг на друга и образующих структуру А/В/А/В/А…, в которой слои А содержат нитрид алюминийхромбора, а слои В содержат нитрид алюминийхрома и не содержат бора, и отличающееся тем, что: многослойная пленка (216) содержит по меньшей мере первую часть (216а) и последнюю часть (216с), причем среднее содержание бора в первой части (216а) покрытия выше, чем среднее содержание бора в последней части (216с) покрытия, и как в первой части (216а), так и в последней части (216с) покрытия присутствуют собственные напряжения сжатия, причем собственное напряжение сжатия в первой части (216а) ниже, чем в последней части (216с) покрытия. 2. Покрытие по п. 1, отличающееся тем, что среднее содержание бора в его первой части (216а) по меньшей мере в 1,2 раза выше, чем в его последней части (216с). 3. Покрытие по п. 2, отличающееся тем, что среднее содержание бора в его первой части (216а) по меньшей мере в 1,4 раза выше, чем в его последней части (216с). 4. Покрытие по одному из пп. 1-3, отличающееся тем, что среднее содержание бора в его первой части (216а) максимум в 6 раз выше, чем в его последней части (216с). 5. Покрытие по одному из предыдущих пунктов, отличающееся тем, что собственное Стр.: 1 A ...

低应力硬质涂层及其施用

一方面，在此描述了涂覆的切削刀具，该涂覆的切削刀具包括一个基体以及附着到该基体上的一个涂层，该涂层包括一个通过物理气相沉积而沉积的耐火层，该耐火层包含M 1-x Al x N，其中x≥0.68并且M是钛、铬或锆，该耐火层包括一个立方晶相并且具有至少25GPa的硬度。

피복된 초경합금 절삭 공구 인서트

본 발명은 금속 절삭 작업을 반다듬질 또는 다듬질하기 위한 PVD 피복된 초경합금 절삭 공구 인서트에 관한 것이다. 초경합금 절삭 공구 인서트는 기재와 내마모성 피복을 포함한다. 상기 기재는 WC 이외에도 Cr/Co 중량비가 0.08 ~ 0.12 인 5.5 ~ 8.5 wt% Co 및 Cr 을 포함한다. 상기 내마모성 피복은 균질한 Al x Ti 1-x N 층 (x = 0.6 ~ 0.67) 을 포함한다. 이 층의 두께는 1 ~ 3.8 ㎛ 이다.

アモルフアス半導体膜の形成方法

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

一种高温抗氧化AlCrYN涂层及其制备方法和应用

本发明属材料涂层制备技术领域，公开了一种高温抗氧化AlCrYN涂层及其制备方法和应用，所述AlCrYN涂层包括CrN过渡层和AlCrYN功能层；所述CrN过渡层中各元素的原子百分比含量为：Cr：45～75at％，N：25～55at％；所述AlCrYN功能层各元素的原子百分比含量为Al：16～33at.％，Cr：10～30at.％，Y：0.5～4at.％，N：40～56at.％。该涂层组织结构致密，表面光洁度高，具有良好的高温抗氧化性、高温耐磨性和结合力，能够与金属衬底牢固结合；本发明利用脉冲阴极电弧离子镀制备AlCrYN涂层，制备过程可控，工艺简单，重复性好，且沉积速率高。

一种新型at涂层

为了进一步提升现有的应用于滚刀或者齿轮的涂层的性能，本发明提出一种新型AT涂层，其包括：由内而外依附在基体1表面的第一打底层ALCrN涂层、第二打底层AlCrN涂层和第一功能层ALCrN涂层，其特征在于：还包括第二功能层ALCrB涂层，其中，第一打底层ALCrN涂层附着在机体1的表面，第二打底层AlCrN涂层附着在第一打底层ALCrN涂层表面，第二功能层ALCrN涂层与第一功能层ALCrB涂层依次重复10次，附着在第二打底层AlCrN涂层表面，其中，第一打底层ALCrN涂层的厚度为1um，第二打底层AlCrN涂层的厚度为1.5um，第一功能层ALCrB涂层与第二功能层ALCrN涂层的总厚度为um，且其中每一层第一功能层ALCrB的厚度为0.1um，第二功能层ALCrN涂层的厚度为0.15um，第一功能层第一功能层ALCrB涂层中AL、Cr和B的质量比为50～55：25～30：18～22。

薄膜晶体管的制造方法

本发明是有关非晶形氧化物和采用该氧化物的薄膜晶体管。具体来说，提供电子载流子浓度未满10 18 /cm 3 的非晶形氧化物和采用该氧化物的薄膜晶体管。于具有源极电极6、漏极电极5、栅极电极4、栅极绝缘膜3和沟道层2的薄膜晶体管上，采用电子载流子浓度未满10 18 /cm 3 的非晶形氧化物作为前述沟道层。

Method of depositing transparent barrier multilayer system

FIELD: chemistry. SUBSTANCE: invention relates to a method of producing transparent barrier multilayer system. Deposition is carried out in at least one vacuum chamber. On a transparent polymer film is deposited at least two transparent barrier layer and one located between both barrier layers of transparent intermediate layer. For deposition of barrier layers evaporated aluminium in presence of hollow cathode plasma and simultaneously in a vacuum chamber is at least one first reaction gas. As an intermediate layer is deposited silicon-containing layer by means of PECVD-process using plasma of hollow cathode. EFFECT: obtaining a transparent barrier multilayer system with high sealing effect, as well as with high rate of application. 7 cl, 1 tbl, 1 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 583 196 C2 (51) МПК C23C 16/30 (2006.01) C23C 16/452 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2013136544/02, 15.02.2012 (24) Дата начала отсчета срока действия патента: 15.02.2012 Приоритет(ы): (30) Конвенционный приоритет: (43) Дата публикации заявки: 10.02.2015 Бюл. № 4 (45) Опубликовано: 10.05.2016 Бюл. № 13 C 2 C 2 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 05.08.2013 (86) Заявка PCT: 2 5 8 3 1 9 6 EP 2012/052624 (15.02.2012) R U 2 5 8 3 1 9 6 (56) Список документов, цитированных в отчете о поиске: JP 2004-093560 A, 25.03.2004. RU 2352683 C2, 20.04.2009. JP 2006-297730 A, 02.11.2006. Schiller S. et. al. PVD coating of plastic webs and sheets with high rates on large areas, Surface and coatings technology, 01.03.2000, 354-355. Fahland М. et. al. Permeation barrier properties of thin oxide films on flexible polymer substrates, Thin solid films, 01.01.2007, c.3078, с.3079. (73) Патентообладатель(и): ФРАУНХОФЕР-ГЕЗ. ЦУР ФЕРДЕРУНГ ДЕР АНГЕВАНДТЕН ФОРШУНГ Е.Ф. (DE) R U 18.04.2011 DE 10 2011 017 403.6 (72) Автор(ы): ГЮНТЕР, Штеффен (DE), МЕЙЕР, Бьерн (DE), ШТРАХ, Штеффен (DE), КЮНЕЛЬ, ...

가스 배리어성 필름 및 그 제조 방법

굴곡에 대해서도 가스 배리어성이 저하하기 어렵고, 고투명하고 또한 고도의 가스 배리어성을 발현하는 가스 배리어성 필름을 제공하는 것을 과제로 한다. 고분자 필름 기재의 적어도 편측에 적어도 산화아연과 이산화규소를 함유하는 가스 배리어층을 갖는 가스 배리어성 필름으로서, 그 가스 배리어층이 소정 범위의 (9664.0eV의 스펙트럼 강도)/(9668.0eV의 스펙트럼 강도)의 값, 소정 범위의 구조 밀도 지수, 소정 범위의 920㎝ -1 에 피크를 가지는 스펙트럼의 면적 강도(A)와 1,080㎝ -1 에 피크를 가지는 스펙트럼의 면적 강도(B)의 비(A/B)의 값 중 어느 하나를 만족하는 구성으로 한다.

Preparation of coated high speed steel

Li-ion battery without olefin separator

본 개시내용의 구현들은 일반적으로, 분리기들, 전술된 분리기들을 포함하는 배터리들 및 커패시터들과 같은 고성능 전기화학적 디바이스들, 및 이를 제조하기 위한 방법들에 관한 것이다. 일 구현에서, 배터리에 대한 분리기를 형성하는 방법이 제공된다. 방법은, 처리 구역에 위치된 전극 구조의 표면 상에 증착될 금속성 물질을 증발 프로세스에 노출시키는 단계를 포함한다. 방법은, 반응성 가스를 처리 구역 내로 유동시키는 단계를 더 포함한다. 방법은, 전극 구조의 표면 상에 세라믹 분리기 층을 증착하기 위해 반응성 가스와 증발된 금속성 물질을 반응시키는 단계를 더 포함한다. Implementations of the present disclosure generally relate to separators, high performance electrochemical devices such as batteries and capacitors comprising the separators described above, and methods for making the same. In one implementation, a method of forming a separator for a battery is provided. The method includes exposing a metallic material to be deposited on a surface of an electrode structure located in a treatment region to an evaporation process. The method further includes flowing a reactive gas into the processing zone. The method further includes reacting the vaporized metallic material with the reactive gas to deposit a ceramic separator layer on the surface of the electrode structure.

磁気記録媒体の製造方法

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

用于铸铁铣削的刀片

本发明涉及一种涂层硬质合金铣削刀片，该涂层硬质合金铣削刀片用于铸铁，例如球墨铸铁(NCI)、灰口铸铁(GCI)、等温淬火球墨铸铁(ADI)和蠕墨铸铁(CGI)的湿式加工或干式加工，其中需要高的耐磨性和克服热裂纹的优良的抵抗力，该涂层硬质合金铣削刀片包括：基底，该基底包括5-7、wt％的Co、140-250ppm的Ti+Ta、和余量WC；和PVD层，该PVD层由Al x Ti 1-x N构成，其中x＝0.50-0.70，并且具有1-10μm的厚度。本发明还涉及用于制造切削工具刀片的方法。

Cemented carbide with refined structure

본 발명은 WC-Co 초경 합금에 관한 것이다. 극도로 작은 양의 Ti, V, Zr, Ta 또는 Nb 또는 이들의 혼합물을 첨가함으로써, 보다 적은 비정상 WC-입자를 갖는 입자 미세 초경 합금 조직이 얻어진다. The present invention relates to WC-Co cemented carbide. Addition of an extremely small amount of Ti, V, Zr, Ta or Nb or a mixture thereof results in a grain microcereal alloy structure with less unsteady WC-grains.