ИСТОЧНИК ДЛЯ НАНЕСЕНИЯ ПОКРЫТИЯ И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

Изобретение относится к источнику(1) для нанесения покрытия катодно-дуговым осаждением из паровой фазы и способу изготовления источника для нанесения покрытия. Источник (1) содержит по меньшей мере один компонент (2, 7), изготовленный из по меньшей мере одного порошкообразного исходного материала посредством порошковой металлургии, и по меньшей мере одну ферромагнитную область (5a, 5b, 6), встроенную в компонент (2, 7). Упомянутую ферромагнитную область (5a, 5b, 6) вводят в компонент (2, 7) и неподвижно соединяют с компонентом во время процесса изготовления способом порошковой металлургии. Изобретение позволяет обеспечить высокую плотность магнитного поля на поверхности мишени источника нанесения покрытия. 2 н. и 9 з.п. ф-лы, 11 ил.

СЛОИ TixSi1-xN И ИХ ПОЛУЧЕНИЕ

Изобретение относится к способу нанесения покрытия на заготовку (варианты). Выполняют покрытие, содержащее по меньшей мере один слой TixSi1-xN, где x≤0,85. Слой TixSi1-xN содержит нанокристаллы, которые имеют средний размер зерна не более 15 нм и имеют текстуру (200). Для получения покрытия применяют метод распыления. Наносят покрытие при плотности тока на поверхности распыляемой мишени выше 0,2 А/см2 и используют мишень из TixSi1-x, где x≤0,85. Между слоем TixSi1-xN и основой заготовки предусмотрен промежуточный слой с TiAlN или CrAlN. 5 н. и 9 з.п. ф-лы, 7 ил.

ПЛАЗМЕННО-ИММЕРСИОННАЯ ИОННАЯ ОБРАБОТКА И ОСАЖДЕНИЕ ПОКРЫТИЙ ИЗ ПАРОВОЙ ФАЗЫ ПРИ СОДЕЙСТВИИ ДУГОВОГО РАЗРЯДА НИЗКОГО ДАВЛЕНИЯ

Изобретение относится к системе для плазменного напыления покрытий (варианты) и установке для плазменного напыления покрытий (варианты). Система содержит катод магнетрона с длинной кромкой и короткой кромкой. Магнитный полюс магнетрона обеспечивает создание электромагнитного барьера. По меньшей мере один удаленный дуговой разряд зажигается отдельно от катода магнетрона и в непосредственной близости от катода так, что он удерживается в пределах объема вблизи мишени магнетрона. Удаленный дуговой разряд распространяется параллельно длинной кромке мишени магнетрона и ограничивается поверхностью мишени с одной стороны и электромагнитным барьером со всех других сторон. Защитный кожух катода удаленного дугового разряда и защитный кожух анода проходят поверх дугового разряда и поперек короткой кромки катода магнетрона. Снаружи узла формирования плазмы расположена магнитная система, создающая магнитные силовые линии, которые проходят в плазму и удерживают плазму перед подложкой. Технический результат ...

УСТРОЙСТВО ДЛЯ ЛИЧНОЙ ГИГИЕНЫ, ИМЕЮЩЕЕ СКОЛЬЗЯЩУЮ ПОВЕРХНОСТЬ

Изобретение относится к области устройств для срезания волос. Устройство для срезания волос содержит поверхность для скользящего взаимодействия с кожей и/или волосами пользователя и зону для срезания волос. Поверхность имеет твердое покрытие со смазывающей способностью. Твердое покрытие содержит внедренные в него частицы. Указанные частицы содержат соединенные с ними ковалентными связями концевые гидрофильные полимерные цепи. Плотность частиц увеличивается по направлению к наружной поверхности твердого покрытия. Изобретение также включает способ получения твердого покрытия со смазывающей способностью на поверхности устройства для срезания волос. Техническим результатом является обеспечение продолжительного смазывающего эффекта при срезании волос. 2 н. и 8 з.п. ф-лы.

МАТЕРИАЛ, СНАБЖЕННЫЙ СИСТЕМОЙ ТОНКИХ СЛОЕВ С ТЕРМИЧЕСКИМИ СВОЙСТВАМИ

Изобретение относится к материалу, содержащему прозрачную подложку, покрытую системой тонких слоев, и может быть использовано, в частности, для остекления как в зданиях, так и в транспортных средствах. Техническим результатом является улучшение термических свойств и свойств пропускания. В частности, предложен материал, содержащий прозрачную подложку, покрытую системой тонких слоев, содержащей последовательное, начиная от подложки, чередование трех функциональных металлических слоев на основе серебра, обозначенных, считая от подложки, как первый, второй и третий функциональные слои, причем толщина функциональных металлических слоев, начиная от подложки, увеличивается в зависимости от удаленности от подложки, и чередование четырех диэлектрических покрытий, обозначенных, считая от подложки, как M1, M2, M3 и M4, причем каждое диэлектрическое покрытие содержит по меньшей мере один диэлектрический слой, так что каждый функциональный металлический слой находится между двумя диэлектрическими покрытиями ...

АБРАЗИВЫ С ПОКРЫТИЕМ

Изобретение относится к металлообработке и может быть использовано при изготовлении режущего инструмента с применением сверхтвердого абразива с покрытием. Последний выполнен с сердцевиной из сверхтвердого абразивного материала на основе алмаза или кубического нитрида, бора и с внутренним и внешним слоями. Внутренний слой выполнен из карбида, нитрида, карбонитрида или борида металла и химически связан с наружной поверхностью сверхтвердого абразивного материала. Наружный слой не карбидизирован и выполнен из вольфрама, физически осажденного на внутреннем слое. В результате обеспечивается надежная защита частиц из сверхтвердого абразива, исключающая их контакт с компонентами связки при изготовлении инструмента, что способствует повышению долговечности инструмента и производительности обработки. 6 з.п. ф-лы.

УСТРОЙСТВО ДЛЯ НАНЕСЕНИЯ ПОКРЫТИЙ В ВАКУУМЕ

Изобретение относится к устройствам для нанесения покрытий в вакууме. Устройство содержит плоскую мишень, установленную на основании, первую магнитную систему, расположенную внутри корпуса с первым каналом водяного охлаждения, источник питания электрического разряда и источник ионов газа. Основание установлено на корпусе. Источник ионов газа содержит внутренний полюсный наконечник с первой стенкой, внешний полюсный наконечник со второй стенкой, кольцевой анод со вторым каналом водяного охлаждения, плиту с третьим каналом водяного охлаждения, вторую магнитную систему и высоковольтный источник питания. Первая стенка и вторая стенка расположены напротив друг друга и образуют выходную апертуру, расположенную со стороны плоской мишени, а внутренний полюсный наконечник и внешний полюсный наконечник охватывают корпус с внешней стороны и отделены от него изолятором. В результате снижается рабочее давление и повышается качество наносимых покрытий. 2 з.п. ф-лы, 4 ил.

РЕЖУЩИЙ ИНСТРУМЕНТ С ПОКРЫТИЕМ И СПОСОБ ИЗГОТОВЛЕНИЯ РЕЖУЩЕГО ИНСТРУМЕНТА С ПОКРЫТИЕМ

Настоящее изобретение относится к режущему инструменту с покрытием для механической обработки металла, такой как механическая обработка с формированием стружки, к способу изготовления указанного режущего инструмента с покрытием и режущей пластине, выполненной в виде режущего инструмента с покрытием. Режущий инструмент с покрытием содержит подложку и покрытие на упомянутой подложке, содержащее слой, состоящий из TiZrAlN, причем 0<х≤0,3, 0,2≤y≤0,8 и 0,1≤(1-х-y)≤0,7. Способ изготовления режущего инструмента с покрытием включает размещение подложки в камере осаждения и нанесение покрытия, содержащего слой, состоящий из TiZrAlN, причем 0<х≤0,3, 0,2≤y≤0,8 и 0,1≤ (1-x-y) ≤0,7. Обеспечивается режущий инструмент с покрытием с улучшенными свойствами во время цикла механической обработки резанием, в частности с покрытием, которое является более стабильным при повышенных температурах. 3 н. и 16 з.п. ф-лы, 3 ил., 1 табл.

ТЕРМООБРАБАТЫВАЕМОЕ ПОКРЫТОЕ ИЗДЕЛИЕ БРОНЗОВОГО ЦВЕТА, ИМЕЮЩЕЕ НИЗКОЕ ЗНАЧЕНИЕ СОЛНЕЧНОГО ФАКТОРА

Изобретение относится к стеклу с покрытием бронзового цвета. Изделие с покрытием включает стекло, на которое нанесены слои в следующей последовательности по мере удаления от стекла: первый диэлектрический слой, содержащий нитрид кремния; первый отражающий инфракрасное излучение слой, содержащий NbZr; второй диэлектрический слой, содержащий нитрид кремния; второй отражающий ИК-излучение слой, содержащий NbZr; третий диэлектрический слой, содержащий нитрид кремния. Изделие с покрытием имеет коэффициент отражения в видимой области спектра со стороны стекла не более 15%. Изделие с покрытием имеет бронзовую окраску на отражение снаружи/со стороны стекла, включая цветовое значение а* со стороны стекла/снаружи от -2,0 до +16,0 и цветовое значение b* со стороны стекла/снаружи от 0 до +20. При измерении на одинарном стекле изделие с покрытием имеет значение солнечного фактора (СФ) не более 0,31 и значение коэффициента теплопритока от солнечного излучения (КТСИ) не более 0,36 и/или при теплоизоляционном ...

СПОСОБ ИЗГОТОВЛЕНИЯ СВЕРХПРОВОДЯЩЕГО ПРОВОДА

Изобретение относится к области электротехники, а именно к способу изготовления сверхпроводящего провода, и может быть использовано при изготовлении сверхпроводящих проводов методом реактивного магнетронного напыления. Повышение скорости изготовления буферных слоев сверхпроводящего провода с высоким критическим током является техническим результатом изобретения. C этой целью металлооксидные пленки сверхпроводящего провода стабильно формируют с высокой скоростью посредством регулирования реакций в переходной области реактивного магнетронного напыления, а способ включает в себя формирование на подложке буферного слоя, содержащего слой Al2O3, причем слой Al2O3 формируют методом реактивного магнетронного напыления, в котором применяют первый газообразный кислород в качестве реакционного газа и распыляемую мишень, выполненную из металлического алюминия, при этом слой Al2O3 формируют с подачей первого газообразного кислорода при первой концентрации, являющейся концентрацией первого газообразного ...

Система прецизионного автоматического позиционирования подложек вакуумной установки магнетронного распыления

Полезная модель относится к плазменной технике и предназначена для получения тонкопленочных покрытий с различными характеристиками на различных подложках. Полезная модель может быть использована в электронике, оптике, нанотехнологиях, машиностроении. Задачей разработанной полезной модели является автоматическое прецизионное позиционирование подложек с малым углом поворота в вакуумной камере магнетронной распылительной установки, для повышения точности напыления и возможности физического изменения текстуры и свойств тонких пленок за счет изменения угла наклона подложки относительно магнетрона. Технический результат достигается тем, что в установку магнетронного распыления, содержащую вакуумную камеру, магнетронную распылительную систему и распыляемую мишень установлен через вакуумный ввод, состоящий из вала, подшипников и уплотнительных сальников, привод шагового двигателя с редуктором, управляемый через драйвер шагового двигателя, особенностью является то, что драйвер шагового двигателя ...

Способ получения тонких металлических пленок на основе вольфрама

Изобретение относится к области нано- и микроэлектроники, а именно к созданию проводниковых межсоединений металлизации высокотемпературных кремниевых полупроводниковых приборов и ИС. Способ получения тонких металлических пленок на основе вольфрама включает магнетронное распыление в газовой среде, содержащей аргон, мишени на основе вольфрама для осаждения тонкой пленки двухкомпонентного сплава вольфрама, при этом в качестве мишени используют мишень на основе сплава вольфрама, содержащего 5-10 ат.% титана, и осаждают на окисленную поверхность кремниевой подложки тонкую пленку сплава, содержащего 5-10 ат.% титана, вольфрам - остальное. Если в качестве мишени используют вольфрамовую мишень, магнетронное распыление проводят в аргон- азотной среде и осаждают на окисленную поверхность кремниевой подложки тонкую пленку сплава вольфрама, содержащего 10-15 ат.% азота, вольфрам - остальное. Полученные пленки двухкомпонентных сплавов W(Ti) и W(N) характеризуются пониженным уровнем встроенных механических ...

Устройство для синтеза и осаждения покрытий

Изобретение относится к области машиностроения, в частности к устройствам для синтеза и осаждения износостойких покрытий на изделиях в вакуумной камере. Устройство содержит вакуумную камеру, планарный магнетрон с плоской мишенью и источник питания разряда, соединенный положительным полюсом с вакуумной камерой и отрицательным полюсом с мишенью. На камере установлен и электрически соединен с ней полый корпус. Планарный магнетрон установлен на дне корпуса. На стенках корпуса вблизи поверхности мишени выполнены каналы подачи в него инертного газа, а на стенках камеры - каналы подачи в нее реактивного газа. Техническим результатом изобретения является повышение производительности устройства за счет повышения скорости осаждения покрытий. 1 ил.

Устройство для нанесения тонкопленочных покрытий

Предназначено для нанесения с помощью плазменного факела покрытий на детали различных размеров. Оно содержит вакуумную камеру, средства откачки и напуска рабочих газов, расположенные в вакуумной камере держатель подложек и дуговой испаритель, состоящий из корпуса дугового испарителя, охлаждаемого катода, соосной с катодом катушки стабилизации дугового разряда, корпус которой охватывает катод и электрически не связан с катодом и соосной с катодом катушки фокусировки, корпус которой примыкает к корпусу катушки стабилизации и электрически изолирован от корпуса вакуумной камеры изолирующим слоем, а между катушками фокусировки и стабилизации, электрически изолированными друг от друга пространственным промежутком на оси дугового испарителя, размещена выполненная из немагнитного металла заслонка, например в форме диска и электрически изолированная от корпусов катушки фокусировки и стабилизации и от корпуса вакуумной камеры, а внутри корпуса катушки фокусировки установлены вплотную к стенкам выполненные ...

МОДИФИЦИРОВАННЫЙ МАТЕРИАЛ, МОДИФИЦИРОВАННЫЙ АНТИМИКРОБНЫЙ МАТЕРИАЛ, СПОСОБ ПОЛУЧЕНИЯ МОДИФИЦИРОВАННОГО МАТЕРИАЛА, СПОСОБ ФОРМИРОВАНИЯ АНТИМИКРОБНОГО ПОКРЫТИЯ НА УСТРОЙСТВЕ И МЕДИЦИНСКОЕ УСТРОЙСТВО, КОТОРОЕ ПРЕДПОЛАГАЕТСЯ ИСПОЛЬЗОВАТЬ В КОНТАКТЕ С ЭЛЕКТРОЛИТОМ НА ОСНОВЕ СПИРТА ИЛИ ВОДЫ, ИМЕЮЩЕЕ НА СВОЕЙ ПОВЕРХНОСТИ АНТИМИКРОБНОЕ ПОКРЫТИЕ

Предлагается антимикробное покрытие и способ его нанесения на медицинские устройства. Покрытия получают нанесением биосовместимого металла методами осаждения из паровой фазы с целью создания атомной неупорядоченности в покрытии, так что становится возможным длительное выделение ионов металла в количестве, достаточном для того, чтобы вызывать антимикробное воздействие. Предпочтительными условиями осаждения для создания атомной неупорядоченности являются более низкая, чем обычно, температура подложки и либо большее, чем обычно, давление рабочего газа, либо меньший, чем обычно, угол потока вещества. Предлагаются также антимикробные порошки, получаемые механической обработкой. Изобретение может быть использовано для других покрытий металлов и порошков металлов, получаемых аналогичным образом, с целью повышения их растворимости. 5 с. и 91 з.п.ф-лы. 7 табл.

Распыляемый узел магнетрона для осаждения композиционных многокомпонентных пленок Ni0.60Co0.3Fe0.1

Изобретение относится к распыляемому узлу магнетрона для осаждения композиционных многокомпонентных пленок Ni0,60Co0,3Fe0,1. Упомянутый узел магнетрона содержит мишень, выполнен с возможностью жесткого прикрепления к магнетрону соосно с ним и дополнительно содержит нижнюю пластину, выполненную охлаждаемой и изготовленную из меди. Мишень содержит первую пластину, выполненную из железа, вторую пластину – из кобальта и внешнюю пластину – из никеля. Упомянутые четыре пластины расположены параллельно и установлены на одной оси. В зонах эмиссии второй и внешней пластин выполнены прорези, расположенные на одной оси симметрично относительно их центра. Для внешней пластины площадь зоны, с которой осуществляется эмиссия частиц никеля, равна sNi=s-sпрNi. Для второй пластины из кобальта суммарная площадь зоны, с которой осуществляется эмиссия частиц кобальта, равна sCo=sпрNi-sпрCo. Суммарная площадь зоны на первой пластине из железа, с которой осуществляется эмиссия частиц железа, равна sFe=sпрCo.

Способ функционализации поверхности медицинского изделия путем наклонного осаждения структурированного антибактериального покрытия на основе фосфатов кальция

Изобретение относится к медицинской технике, а именно к способу функционализации поверхности имплантата путем осаждения структурированного антибактериального покрытия на основе фосфатов кальция. Способ включает распыление мишени из цинк- или медьсодержащего гидроксиапатита в форме плоского диска толщиной 2-4,5 мм с диаметром, совпадающим с диаметром катода магнетрона, закрепленной на катоде магнетрона, в плазме высокочасточного (ВЧ) магнетронного разряда в атмосфере аргона при размещении имплантата на держателе поворотного стола вакуумной камеры на расстоянии 37-80 мм от нижней плоскости мишени. При формировании антибактериального покрытия имплантата откачивают вакуумную камеру до остаточного давления не выше 6,0*10-4 Па, заполняют затем аргоном и доводят до рабочего давления (1,0-3,0)*10-1 Па, зажигают ВЧ магнетронный разряд на мощности 50 Вт с последующим ступенчатым, через интервал в 50 Вт, подъемом мощности до 200-300 Вт и выдержкой по 10 минут на каждой ступени, проводят процесс ВЧ ...

УСТРОЙСТВО ДЛЯ ПОЛУЧЕНИЯ ЭЛЕКТРОПРОВОДЯЩЕГО ПОКРЫТИЯ В ВИДЕ МЕТАЛЛ-УГЛЕРОДНОЙ ИЛИ МЕТАЛЛИЧЕСКОЙ ПЛЕНКИ МАГНЕТРОННЫМ РАСПЫЛЕНИЕМ С МЕХАНИЧЕСКОЙ ВИБРАЦИЕЙ ПОДЛОЖКИ

Изобретение относится к устройству для получения электропроводящего покрытия в виде металл-углеродной или металлической пленки магнетронным распылением с механической вибрацией подложки. Указанное устройство содержит магнетронную камеру, в которой размещены мишень и магнетронный излучатель, и виброгенератор, к которому одним из своих концов прикреплен шток, колеблющийся под действием подаваемого на него переменного напряжения, выполненный с возможностью соединения с подложкой. Шток виброгенератора выполнен П-образным. На имеющем возможность размещения в магнетронной камере конце П-образного штока закреплен Т-образный кронштейн, который жестко зажат между полками П-образного штока виброгенератора и выполнен с возможностью закрепления подложки. Вышеупомянутый конец П-образного штока виброгенератора расположен в Т-образном кронштейне. Упомянутый шток выполнен с возможностью прохождения сквозь боковую стенку магнетронной камеры с герметизацией уплотнительными манжетами и с возможностью постоянного ...

УСТРОЙСТВО ДЛЯ НАНЕСЕНИЯ ПОКРЫТИЯ ВАКУУМНО-ДУГОВЫМ ИСПАРЕНИЕМ

Изобретение относится к устройствам для нанесения покрытий вакуумно-дуговым испарением и может быть использовано при производстве триботехнических изделий и металлорежущего инструмента с функциональными покрытиями легированных карбидных соединений. Устройство содержит вакуумную камеру, систему доступа к ее внутреннему объему, систему подачи газа, систему управления и систему нанесения покрытия. Система нанесения покрытия включает соединяемый с вакуумной камерой фланцевым соединением полый цилиндрический корпус вакуумно-дугового испарителя с дополнительным концевым фланцем. В теле корпуса выполнены изолированный токоввод электрода поджига, изолированный токоввод кольцевого анода, изолированный токоввод катода-мишени, вход и выход воды системы охлаждения, ввод магнитопровода и токовводы магнитных катушек.В полости корпуса размещены кольцевой анод, дисковый катод-мишень, держатель катода-мишени, две магнитные катушки постоянного тока, размещенные одна за другой соосно катоду-мишени. Торец ...

СПОСОБ НАНЕСЕНИЯ ПЛЕНОЧНОГО ПОКРЫТИЯ

... 1. Способ нанесения пленочных покрытий, в котором поочередно осуществляют импульсную генерацию плазмы за счет распыления катодной мишени, осаждение вещества на подложку в течение времени t1 с последующим, через временной промежуток τ, воздействием на покрытие импульсным пучком высокоэнергетических ионов, отличающийся тем, что в вакууме формируют стационарную плазму магнетронного разряда, осаждение покрытия осуществляют с помощью сильноточного высоковольтного диффузионного разряда, формируемого путем пропускания через стационарную плазму магнетронного разряда импульсов тока с плотностью 0,3-100 А/см2 и длительностью t1=10-6...1 с частотой следования от однократного до 103 Гц, временной промежуток τ выбирают больше, чем время рекомбинации плазмы сильноточного высоковольтного диффузионного разряда в объеме камеры распыления, воздействие импульсным пучком осуществляют с энергией пучка не более 106 эВ, и при этом осуществляют подавление потока вторичных частиц в ускорительный промежуток при ...

СПОСОБ ГОМОГЕННОГО НАНЕСЕНИЯ ПОКРЫТИЙ HIPIMS

... 1. Способ физического нанесения покрытия из газовой фазы путем распыления в вакуумированой камере для нанесения покрытий, в частности, с помощью процесса HIPIMS, включающий следующие этапы:a) подготовка генератора с заданной постоянной отдачей мощности, предпочтительно, по меньшей мере после подключения и по окончании интервала увеличения мощности,b) подключение генератора,c) присоединение первого частичного катода к генератору так, чтобы мощность генератора подавалась на первый частичный катод,d) отсоединение генератора от первого частичного катода по окончании заданного первого интервала импульсов высокой мощности, соответствующего первому частичному катоду,e) присоединение второго частичного катода к генератору так, чтобы мощность генератора подавалась на второй частичный катод,f) отсоединение генератора от второго частичного катода по окончании заданного второго интервала импульсов высокой мощности, соответствующего второму частичному катоду,отличающийся тем, что длительность первого ...

СПОСОБ МАГНЕТРОННОГО РАСПЫЛЕНИЯ ИМПУЛЬСАМИ ВЫСОКОЙ МОЩНОСТИ, ОБЕСПЕЧИВАЮЩИЙ ПОВЫШЕННУЮ ИОНИЗАЦИЮ РАСПЫЛЕННЫХ ЧАСТИЦ, И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

... 1. Способ осуществления процесса нанесения покрытий методом HIPIMS, включающий следующие стадии:- размещают по меньшей мере одну подложку, имеющую покрываемую поверхность, внутри камеры осаждения устройства нанесения покрытий, содержащего по меньшей мере одну являющуюся источником материала покрытия мишень и предназначенного для работы во время процесса нанесения покрытия посредством технологии HIPIMS, причем размещают подложку таким образом, что покрываемая поверхность может была расположена перед мишенью в течение по меньшей мере некоторого времени во время процесса нанесения покрытия;- осуществляют работу устройства нанесения покрытий методом HIPIMS для того, чтобы покрыть упомянутую по меньшей мере одну подложку, при этом прикладывая напряжение смещения к подложке во время процесса нанесения покрытия и таким образом генерируя ток смещения, который может быть измерен на подложке,отличающийся тем, чтоминимальное расстояние (5) между подложкой и мишенью, которое задается, когда покрываемая ...

СЛОИ HIPIMS

... 1. Способ осаждения систем слоев PVD из газовой фазы с помощью напыления по меньшей мере на одну подложку, при этом система слоев содержит по меньшей мере один первый слой, отличающийся тем, что по меньшей мере на одном этапе способа применяют способ HIPIMS с плотностью мощности по меньшей мере 250 Вт/см, при этом используют длину импульсов по меньшей мере с длительностью 5 мс, в то время как к подложке приложено напряжение смещения, так что возникающий во время этого этапа слой имеет морфологию, которая при рассматривании с помощью растрового электронного микроскопа имеет более грубый вид, чем морфология сравнимого слоя, который осажден при длительности импульсов 250 мкс при прочих равных условиях.2. Способ по п. 1, отличающийся тем, что плотность мощности не превышает 2000 Вт/см.3. Способ по п. 1 или 2, отличающийся тем, что дополнительно по меньшей мере к одному первому слою наносят по меньшей мере один второй слой при более низком по величине напряжении смещения.4. Способ по п. 1 или ...

Установка магнетронного напыления покрытий на движущуюся тонкую металлическую проволоку или оптоволокно

Изобретение относится к установке для магнетронного напыления покрытия на протяженное гибкое изделие в виде металлической проволоки или оптоволокна. Указанная установка включает вакуумную систему, систему перемотки металлической проволоки или оптоволокна и магнетронную распылительную систему. Указанная магнетронная распылительная система содержит цилиндрический катод с водяным охлаждением, аноды и соленоид. Указанные аноды и цилиндрический катод расположены с зазорами для подачи рабочего газа. Система перемотки проволоки или оптоволокна содержит подающую катушку, установленную в вакуумной камере указанной вакуумной системы на ось с асинхронной муфтой, ролики, принимающую катушку и раскладчик, которые выполнены с возможностью протягивания металлической проволоки или оптоволокна при обеспечении постоянной разницы скоростей вращения принимающей катушки и привода асинхронной муфты. Раскладчик представляет собой ролик, закрепленный на манипуляторе и выполненный с возможностью осуществления возвратно-поступательных ...

СПОСОБ ЭНДОТЕЛИЗАЦИИ ПРОТЕЗОВ КРОВЕНОСНЫХ СОСУДОВ

Группа изобретений относится медицине, в частности к способу нанесения несплошного покрытия из металла, выбранного из титана, циркония, гафния, ванадия, ниобия или тантала, на внутреннюю и внешнюю поверхность полимерного протеза кровеносного сосуда из полиэтилентерефталата; а также к протезу кровеносного сосуда, содержащему каркас из полиэтилентерефталата с нанесенным несплошным покрытием из металла. Осуществление изобретения позволяет сократить время образования неоинтимы по всей внутренней поверхности протеза кровеносного сосуда за счет технологии нанесения несплошного покрытия на внутреннюю или внешнюю поверхность протеза. 2 н. и 10 з.п. ф-лы, 1 табл., 5 ил.

Способ формирования трибологического покрытия

Изобретение может быть использовано в машиностроении и микромеханике для уменьшения трения и износа в подшипниках скольжения. Сначала подготавливают рабочую поверхность изделий 1 путём полировки, обезжиривания в ультразвуковой ванне, обработки бензино-спиртовой смесью и термообработки в сушильном шкафу. Подготовленные изделия 1 размещают в вакуумной камере 2, изолируют от её корпуса и подключают к источнику импульсного отрицательного напряжения (напряжение смещения). Одновременно с откачиванием вакуумной камеры 2 ее нагревают нагревателями 5 для интенсификации процесса дегазации. После подачи в вакуумную камеру 2 плазмообразующего газа - аргона металлическую поверхность изделий 1 подвергают ионному травлению, для чего включают магнетрон 4. Затем напускают азот и проводят одновременное азотирование при нагреве поверхности изделий 1 до 200÷500°С. После этого на поверхность изделий 1 наносят переходный слой покрытия из по крайней мере одного слоя металла, карбида металла или нитрида металла ...

МОДИФИЦИРОВАННЫЙ МАТЕРИАЛ, МОДИФИЦИРОВАННЫЙ АНТИМИКРОБНЫЙ МАТЕРИАЛ, СПОСОБ ПОЛУЧЕНИЯ МОДИФИЦИРОВАННОГО МАТЕРИАЛА, СПОСОБ ФОРМИРОВАНИЯ АНТИМИКРОБНОГО ПОКРЫТИЯ НА УСТРОЙСТВЕ И МЕДИЦИНСКОЕ УСТРОЙСТВО, КОТОРОЕ ПРЕДПОЛАГАЕТСЯ ИСПОЛЬЗОВАТЬ В КОНТАКТЕ С ЭЛЕКТРОЛИТОМ НА ОСНОВЕ СПИРТА ИЛИ ВОДЫ, ИМЕЮЩЕЕ НА СВОЕЙ ПОВЕРХНОСТИ АНТИМИКРОБНОЕ ПОКРЫТИЕ

Предложено антимикробное покрытие и способ его нанесения на медицинские устройства. Покрытия получают нанесением биосовместимого металла методами осаждения из паровой фазы с целью создания атомной неупорядоченности в покрытии так, что становится возможным длительное выделение ионов металла в количестве, достаточном для того, чтобы вызывать антимикробное воздействие. Предпочтительными условиями осаждения для создания атомной неупорядоченности являются более низкая, чем обычно, температура подложки и либо большее, чем обычно, давление рабочего газа либо меньший, чем обычно, угол потока вещества. Предложены также антимикробные порошки, получаемые механической обработкой. Изобретение может быть использовано для других покрытий металлов и порошков металлов, получаемых аналогичным образом, с целью повышения их растворимости.

СПОСОБ ПОЛУЧЕНИЯ ПРОЗРАЧНОГО ПРОВОДЯЩЕГО ПОКРЫТИЯ ИЗ ОКСИДА МЕТАЛЛА ПУТЕМ ИМПУЛЬСНОГО ВЫСОКОИОНИЗИРУЮЩЕГО МАГНЕТРОННОГО РАСПЫЛЕНИЯ

... 1. Способ нанесения прозрачного проводящего покрытия из оксида металла на подложку, при котором, по меньшей мере, один компонент покрытия из оксида металла распыляют высокоионизирующим импульсным высокоэффективным магнетронным способом и конденсируют на подложке, отличающийся тем, что: ! - импульсы магнетрона имеют пиковую плотность мощности свыше 1,5 кВт/см2, ! - длительность импульсов магнетрона составляет ≤200 мкс и ! - среднее увеличение плотности протекающего тока при воспламенении плазмы во временном интервале ≤0,025 мс составляет не менее 106 А/(мс см2). ! 2. Способ по п.1, отличающийся тем, что пиковая плотность мощности импульсов магнетрона составляет не менее 3,0 кВт/см2. ! 3. Способ по п.1, отличающийся тем, что длительность импульсов магнетрона составляет ≤100 мкс. ! 4. Способ по п.1, отличающийся тем, что длительность импульсов магнетрона составляет ≤50 мкс, предпочтительно ≤40 мкс, в частности ≤35 мкс. ! 5. Способ по п.1, отличающийся тем, что частота импульсов магнетрона ...

СПОСОБЫ НАНЕСЕНИЯ ПОКРЫТИЙ НА ТРУБЧАТЫЕ УСТРОЙСТВА, ИСПОЛЬЗУЕМЫЕ В ОПЕРАЦИЯХ БУРЕНИЯ, ЗАКАНЧИВАНИЯ СКВАЖИНЫ И ДОБЫЧИ НА НЕФТЕГАЗОВЫХ МЕСТОРОЖДЕНИЯХ

... 1. Способ нанесения покрытия на часть внешней поверхности трубчатого устройства, используемого в операциях бурения, заканчивания скважины и добычи на нефтегазовых месторождениях, включающий: предоставление одного или более трубчатых устройств и одной или более вакуумных камер для нанесения покрытия, размещение одного или более трубчатых устройств в одной или более вакуумных камерах для нанесения покрытия, где по меньшей мере часть одного или более трубчатых устройств находится вне одной или более вакуумных камер для нанесения покрытия, формирования одного или более вакуумных герметичных уплотнений между внешней поверхностью одного или более трубчатых устройств и одной или более стенок одной или более вакуумных камер для нанесения покрытия, приложение вакуума внутри одной или более вакуумных камер для нанесения покрытия вокруг одной или более частей внешней поверхности одного или более трубчатых устройств для нанесения покрытия, и формирование покрытия на одной или более частях внешней поверхности ...

МНОГОСЛОЙНАЯ ПОДЛОЖКА И СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ

Способ получения износостойкого покрытия на основе борида алюминия-магния

СПОСОБЫ, ИСПОЛЬЗУЮЩИЕ УДАЛЕННУЮ ПЛАЗМУ ДУГОВОГО РАЗРЯДА

... 1. Система для нанесения покрытий, содержащая:вакуумную камеру и узел нанесения покрытий, включающий:источник паров;подложкодержатель для удерживания подложек, на которые наносятся покрытия, таким образом, чтобы эти подложки располагались перед источником паров;узел катодной камеры, включающий катодную мишень, необязательный первичный анод и экран, изолирующий катодную мишень от вакуумной камеры, при этом указанный экран имеет отверстия для пропускания тока электронной эмиссии от катодной мишени в вакуумную камеру;удаленный анод, электрически связанный с катодной мишенью;первичный источник питания, присоединяемый между катодной мишенью и первичным анодом; ивторичный источник питания, присоединяемый между катодной мишенью и удаленным анодом, причем источник паров располагается между узлом катодной камеры и удаленным анодом, линейные размеры удаленного анода, источника паров, катодной мишени и подложкодержателя параллельны друг другу, и линейные размеры удаленного анода равны или превышают ...

СИСТЕМА НАНЕСЕНИЯ ПОКРЫТИЯ (ВАРИАНТЫ)

ПОДЛОЖКА, СНАБЖЕННАЯ СИСТЕМОЙ ТОНКИХ СЛОЕВ С ТЕРМИЧЕСКИМИ СВОЙСТВАМИ

ИСТОЧНИК ДЛЯ НАНЕСЕНИЯ ПОКРЫТИЯ И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

... 1. Источник (1) для нанесения покрытия физическим осаждением из паровой фазы, включающий по меньшей мере один компонент (2, 7, 8), изготовленный из по меньшей мере одного порошкообразного исходного материала в процессе изготовления способом порошковой металлургии, и по меньшей мере одну ферромагнитную область (5a, 5b, 6), встроенную в компонент, причем по меньшей мере одна ферромагнитная область (5a, 5b, 6) введена в компонент (2, 7, 8) и неподвижно соединена с компонентом в процессе изготовления способом порошковой металлургии.2. Источник для нанесения покрытия по п.1, отличающийся тем, что по меньшей мере одна ферромагнитная область (5a, 5b, 6) включает по меньшей мере одну область (6), изготовленную из ферромагнитного материала, введенного в порошковой форме в процессе изготовления способом порошковой металлургии.3. Источник для нанесения покрытия по п.1, отличающийся тем, что по меньшей мере одна ферромагнитная область (5a, 5b, 6) включает по меньшей мере одну область с постоянной намагниченностью ...

ВЫСОКОПРОИЗВОДИТЕЛЬНЫЙ ИСТОЧНИК ДЛЯ ПРОЦЕССА РАСПЫЛЕНИЯ

... 1. Способ создания плазменного разряда с плотностью тока разряда, по меньшей мере в некоторых областях, локально свыше 0,2 А/см, включающий следующие этапы:- обеспечение блока энергоснабжения с предварительно заданной максимальной мощностью;- обеспечение по меньшей мере двух магнетронных источников распыляемого материала с предварительно заданной в каждом случае зоной распыления и предварительно заданным термическим пределом, причем зона распыления выполнена настолько малой, что при воздействии максимальной мощности от блока энергоснабжения соответствующий в каждом случае магнетронный источник распыляемого материала плотность тока разряда составляет свыше 0,2 А/см;- подачу энергии с помощью блока энергоснабжения с первой мощностью на первый из по меньшей мере двух магнетронных источников распыляемого материала в течение первого интервала времени, причем первая мощность выбирается достаточно высокой, чтобы на магнетронном источнике распыляемого материала, по меньшей мере в одной области, ...

Устройство для нанесения покрытий на порошковые материалы и способ покрытия керамической микросферы металлом методом магнетронного напыления

Группа изобретений относится к устройству для нанесения металлического покрытия на алюмосиликатные полые микросферы магнетронным напылением и способу нанесения металлического покрытия с использованием упомянутого устройства. Упомянутое устройство содержит следующие элементы: вакуумную камеру, расположенные в ней электрод с возможностью использования в виде катода, виброперемешиватель-держатель указанных микросфер, содержащий вибропривод и металлическую мембрану, а также защитную сетку. Защитная сетка для защиты от разлета упомянутых микросфер установлена между катодом и указанной мембраной. Вакуумная камера заземлена. Упомянутый электрод снабжен магнитами и дополнительно установленным экраном для локализации области горения разряда. Виброперемешиватель-держатель выполнен с возможностью создания псевдокипящего слоя упомянутых микросфер. Упомянутый способ содержит следующие этапы: предварительное промывание указанных микросфер с добавлением в раствор кислот или солей для сенсибилизации и ...

Способ получения слоистого композиционного материала на основе алюминия

Изобретение относится к металлургии цветных металлов и может быть использовано для изготовления композиционных материалов на основе алюминия, упрочненных базальтовой тканью, методом заливки в форму. Способ включает обработку базальтовой ткани, плавление алюминия, установку базальтовой ткани в форму, заливку алюминия в форму и охлаждение. В качестве армирующего компонента используется базальтовая ткань следующего состава, мас.%: SiO2 - 47÷56; CaO - 5,5÷12; Al2O3 - 12÷17; MgO - 4,4÷9,0; Fe2O3+FeO - 10÷14; TiO2 - 1÷2; K2O - 0,9; P2O5 - 0,5. Обработка базальтовой ткани включает последовательное нанесение на поверхность слоёв хрома и алюминия, при этом общая толщина слоя не должна превышать 100 мкм. Изобретение позволяет получить слоистый композиционный материал на основе алюминия с повышенными механическими свойствами. 1 ил., 1 табл.

Мишень магнетрона для осаждения пленки бинарного сплава TaxTi1-x

Изобретение относится к мишени магнетрона для осаждения пленки бинарного сплава из тантала и титана TaxTi1-x, при этом x > 0,5. Упомянутая мишень содержит две металлические пластины, расположенные параллельно друг другу и выполненные с возможностью жесткого прикрепления к магнетрону соосно с ним. Внутренняя охлаждаемая пластина выполнена из титана, а внешняя пластина – из тантала. Во внешней пластине выполнены две прорези в виде секторов кольца с углом менее 120°. Упомянутые прорези расположены симметрично относительно центра мишени. Обеспечивается создание мишени магнетрона, позволяющей осаждать пленки из бинарного сплава TaxTi1-x при x > 0,5. 4 ил., 1 пр.

Устройство для катодного распыления материалов

Einrichtung zum Beschichten von Substraten

Lichtbogen-Magnetron-Vorrichtung

Cathodic sputtering apparatus with adjustable target

A cathodic sputter deposition apparatus has one or more sputter targets (32, 42, 52) which match the substrate (60). The targets can be inserted into one or more cavities (70, 80, 90) defined by one or more substrate faces (72, 74, 82, 84, 92, 94) to be coated. Preferably, the or each sputter cathode (30, 40, 50) is loosely mounted on a holder plate (15), so that the distance between the or each cathode and the holder plate can be varied. There is a tubular anode (37, 47, 57) which holds the insulated target at one end and which can be displaced through an opening in the holder plate (15). Also claimed is a magnetron sputter cathode for use in the above apparatus. The cathode includes a cylindrical target which has side and front sputter faces and which contains a cavity for accommodating a magnet. Further claimed is an arrangement for use in the above apparatus, comprising several individually controllable sputter cathodes with target surfaces matching the shape of the substrate to be ...

Method for protecting tube target of tube magnetron from corrosion, involves maintaining potential difference between magnet system and tube target so that potential difference is smaller than potential barrier

The method involves operating the tube target (1) as a cathode. The tube target comprises a rotatable base tube (11) with a target material (12). The tube target is cooled by a cooling circuit with a cooling agent, where the cooling circuit is arranged in the inner space of the tube target. A potential difference is maintained between a magnet system (4) and the tube target so that the potential difference is smaller than the potential barrier for electrochemical corrosion reactions at the surface of the base tube standing in contact with the cooling agent. An independent claim is included for an arrangement for protecting a tube target of a tube magnetron from corrosion.

Verfahren zur Beschichtung eines Werkstückes aus Kunststoff mit einer Metallschicht.

Magnetronanordnung

Gemäß verschiedenen Ausführungsformen kann eine Magnetronanordnung, aufweisen: eine Lageranordnung, welche einen Träger (102) aufweist, zum drehbaren Lagern eines rohrförmigen Targets (302), in welches der Träger (102) hineinerstreckt ist; eine oder mehr als eine Magnetsystemgruppe (150), von denen jede Magnetsystemgruppe (150) aufweist: eine optionale Rückschlussplatte (202), mindestens zwei Magneten (104), ein elektrisches Stellglied, welches eingerichtet ist, eine Lage der Rückschlussplatte (202) und/oder der mindestens zwei Magneten (104) relativ zu dem Träger (102) in Antwort auf ein dem Stellglied zugeführtes elektrisches Steuersignal zu stellen; einen optionalen elektrischen Generator (308), welcher eingerichtet ist, eine Drehbewegung des Targets (302) in elektrische Leistung umzuwandeln und dem Stellglied zuzuführen.

Eine Magnetron-Zerstäubungsvorrichtung, in der zwischen zwei Magnetflußverteilungsmodi (ausgeglichener Modus/nicht-ausgeglichener Modus) umgestellt werden kann, ein Filmbildungsverfahren zur Bildung eines Films aus einem anorganischen Filmbildungsmaterial unter Verwendung der Vorrichtung und eine Dualmodus-Magnetron-Zerstäubungsvorrichtung und ein Filmbildungsverfahren zur Bildung eines Films aus einem anorganischen Filmbildungsmaterial bei einer niedrigen Temperatur unter Verwendung der Vorrichtung

Magnetron-Zerstäubungsvorrichtung, in der eine Zerstäubungskathode angeordnet ist, um eine ausgeglichene Verteilung von Magnetflüssen zu erzeugen, und in der der ausgeglichene Modus in den nichtausgeglichenen Modus umgewandelt werden kann, indem ein Artikel, der Ferromagnetismus bei Raumtemperatur aufweist, auf oder nahe der Oberfläche der Zerstäubungskathode zum Halten eines Materialtargets plaziert wird, und der nichtausgeglichene Modus wieder in den ausgeglichenen Modus umgewandelt werden kann, indem der ferromagnetische Artikel entfernt wird.

KATHODE FUER KATHODENZERSTAEUBUNGSVORRICHTUNGEN

Vacuum treatment chamber

The vacuum treatment chamber is provided with a sputtering electrode (20) and a counter electrode (22) which together with the sputtering electrode form a discharge space (I), with area regions of the counter electrode excluded from the sight of the sputtering electrode. The chamber is characterised by the fact that there is a third electrode (26) forming a further discharge space (II). For electrons there is an essentially obstacle-free connection between the discharge spaces (I, II). Also claimed are a method and a magnet arrangement.

Artikel mit einer dekorativen und schützenden mehrschichtigen Beschichtung

Magnetron sputtering device comprises a target and a magnetic system that are movable with respect to each other

Magnetron sputtering device (1) comprises a target (2) and a magnetic system (3) that are movable with respect to each other and the magnet system form a magnetic field penetrating the target, for producing rotating race tracks. The magnetic field lines (4) run asymmetrically over a surface of a target material (22) in the reversal region of the race tracks relative to the normal direction of the surface of the target material.

Sputterkathode-Magnetsystem und Vakuumanordnung

Gemäß verschiedenen Ausführungsformen kann ein Sputterkathode-Magnetsystem (100 bis 1200) aufweisen: einen Außenmagnetpol (165a), welcher eine Aneinanderreihung (102) von Polkörpern (102a, 102b, 102c, 102d, 102s) aufweist, wobei die Aneinanderreihung (102) zwei längserstreckte erste Abschnitte aufweist, einen längserstreckten Innenmagnetpol (165i), welcher zwischen den zwei ersten Abschnitten (1121) angeordnet ist; wobei die Aneinanderreihung (102) zumindest einen zweiten Abschnitt (112e) aufweist, welcher die zwei ersten Abschnitte (1121) miteinander verbindet und um einen Endabschnitt (114e) #des Innenmagnetpols (165i) herum erstreckt ist; wobei zumindest ein Polkörper des zweiten Abschnitts (112e) eine größere Duktilität aufweist als der Innenmagnetpol (165i) und/oder die zwei ersten Abschnitte (1121).

Sputter coating device, useful in vacuum coating plant, comprises support unit having flange and carrier profile, and sputtering magnetron arranged parallel to profile, where magnetron is fixed at adjustable distance relative to profile

The device comprises a support unit (1) having a mounting flange (11) and a carrier profile (12), which has a free end connected to a terminal end of the mounting flange, a sputtering magnetron (2) arranged parallel to the carrier profile attached to the support unit, where the sputtering magnetron is fixed at an adjustable distance relative to the carrier profile. The sputtering magnetron comprises a firmly attached terminal box (3), which is distance-adjustable with the sputtering magnetron relative to the carrier profile. The device comprises a support unit (1) having a mounting flange (11) and a carrier profile (12), which has a free end connected to a terminal end of the mounting flange, a sputtering magnetron (2) arranged parallel to the carrier profile attached to the support unit, where the sputtering magnetron is fixed at an adjustable distance relative to the carrier profile. The sputtering magnetron comprises a firmly attached terminal box (3), which is distance-adjustable with ...

Apparatus for sputter coating of substrates with use of variable plasma potential has an additional electrode in at least one plasma space between magnetrons and substrate

The apparatus has an additional electrode (5) located in at least one plasma space between the individual magnetrons (3.1, 3.2) and the substrate (2), and is provided with an added positive potential relative to earth.

Vakuumbeschichtungsanlage zum Beschichten von längserstreckten Substraten

Der Erfindung, die eine Vakuumbeschichtungsanlage zur Beschichtung längserstreckter Substrate mit einer oder mehreren Beschichtungssektionen und einer oder mehreren Pumpsektionen, mit mindestens einem Magnetron in einer Anordnung als Sputter-down-Variante oberhalb des Substrates mit einer der Oberseite des Substrates zugewandten Targetfläche und/oder mit einer Anordnung als Sputter-up-Variante unterhalb des Substrates mit einer der Unterseite des Substrates zugewandten Targetfläche und einer Transporteinrichtung betrifft, liegt die Aufgabe zugrunde, eine In-line-Beschichtungsanlage für die Zweiseitenbeschichtung von längserstreckten Substraten zu gestalten, bei der der konstruktive Aufwand und der Platzbedarf verringert werden. Die Aufgabe wird dadurch gelöst, dass die Transporteinrichtung (9) in einer Antriebsebene (10) und in einer Transportebene (11) unterteilt angeordnet ist, wobei die Antriebsebene (10) so angeordnet ist, dass in der Sputter-up-Variante die Unterseite eines das Magnetron ...

Sputtering apparatus

Article having a sandwich layer coating

An article is coated with a multi-layer coating comprising a nickel layer, a tin-nickel alloy layer, a non-precious refractory metal layer, a sandwich layer comprised of a plurality of alternating layers of non-precious refractory metal compound and of a non-precious refractory metal, a non-precious refractory metal compound layer, and optionally a layer comprised of a non-precious refractory metal oxide or the reaction products of a non-precious refractory metal, oxygen and nitrogen.

Article having a coating thereon

Apparatus and methods for sputtering

Electromagnet arrangement for generating a uniform planar magnetic field

An electromagnet comprises a winding or windings 13, 15 arranged such that each effective turn of the winding or windings follows the perimeter of a U-shaped core 11, 16. The said electromagnet generates a uniform magnetic field about a planar object 20 which is parallel to the internal base section of the U-shaped perimeter. The U-shaped electromagnet may be formed by a planar electromagnet 13 with an auxiliary coil 15 and core 16 positioned adjacent respective edges of the windings of the planar electromagnet 13 such that they project beyond the face of the planar electromagnet 13. One or more independent power supplies may be used to activate one or more coils. The auxiliary coils may include various tapping points such that the number of windings of respective coils can be adjusted. Current level and number of windings may be adjusted to tune the coils. There is also disclosed a uniform magnetic field generating apparatus comprising a planar electromagnet with auxiliary coils disposed ...

Sputtering apparatus

A dielectric material, e.g. quartz, aluminium oxide, mullite, boron nitride and various glasses, in the form of a target T carried by an electrode 22 is sputtered on to substrates of e.g. silicon mounted in holders 80 on the bottom of an anode 18 by applying a radio frequency voltage between the electrodes 18, 22. An anti-sputtering shield 26 is arranged around the electrode 22 at a distance which allows sputtering to take place and at most is equal to the thickness of the Croobes dark space. The cathode may be cooled by a circulating fluid, and the substrates may be either heated or cooled. Magnets 90 provide a magnetic field in the inter-electrode space. The sputtering atmosphere may be argon. ...

Plasma assisted sputter deposition.

A plasma-assisted sputter deposition system 1 comprising a reactor into which a process gas is introduced to be used for producing plasma and an annular electrode 2 made of a material for sputtering by said plasma. The lower surface of said annular electrode is arranged at an angle or parallel to the surface of a wafer 9 to be deposited with said material. Two or more circular magnets with different diameters 19a, 19b are arranged above the electrode. The magnets are arranged to have alternate polarities facing the electrode so as to generate one or more close loop magnetic flux lines 37 below the electrode. The electrode is connected to an electrical power source 10 and a wafer holder 5 for holding said wafer in a stationary position for film deposition is provided.

Sputtering device

Sputter deposition

A sputter deposition apparatus comprising a plasma generation arrangement arranged to provide plasma for sputter deposition of target material 102 within a sputter deposition zone 112, a conveyor system 114, 118 for conveying a continuous web of substrate 104 through the sputter deposition zone in a conveyance direction D, and one or more target support assemblies 108 to support one or more targets in the sputter deposition zone to provide for sputter deposition of the target material on the substrate utilising the plasma such that as the substrate is conveyed through the sputter deposition zone, in use, there is deposited a first stripe of target material on the substrate and a second stripe of target material on the substrate wherein the first stripe comprises at least one of a different density of the target material or a different composition of the target material than the second stripe. Ideally, the apparatus comprises a first target support assembly supporting a first target 102a ...

High power impulse magnetron sputtering vapour deposition

A method of plasma vapour deposition

RADIO FREQUENCY SPUTTERING APPARATUS

... 1284224 Sputtering apparatus EDWARDS HIGH VACUUM INTERNATIONAL Ltd 13 Nov 1969 [12 Dec 1968] 59093/68 Heading C7F A R. F. sputtering apparatus comprises a vacuum chamber which may be water cooled, target electrodes 5, 6 with earthed shields 7, 8, and a rotatable drum 9 carrying the substrates. A magnet field is provided by an electromagnet 10. The electrodes may be arranged in one or more pairs; and they may be inside the substrate carrying drum. Alternatively the substrates may be passed in line across the electrodes. The temperature of the substrates may be controlled by radiant heaters 12.

Improved method of disintegration by means of an electric glow discharge

... 476,208. Depositing metals by electric discharge; high vacua. NAAMLOOZE VENNOOTSCHAP PHILIPS' GLOEILAMPENFABRIEKEN. Dec. 24, 1936, No. 35369. Convention date, Dec. 28, 1935. [Class 41] . [Also in Group XXVIII] In the method of metallizing articles by cathode disintegration by a glow discharge at a pressure below 0À2 mm. a magnetic field, which may be of strength about 300 gauss, is provided whereby the electrons are caused to follow a path between cathode and anode which is materially longer than the direct path along the electric lines of force; by this means the current for a given gas pressure is increased and the ignition voltage reduced. The arrangement is also of use when the discharge is employed for the purpose of reducing the gas pressure in a vessel. The angle between the magnetic and electric fields is preferably greater than 45‹ and is preferably about 90‹ in at least one part of the discharge space. In an arrangement for coating a cylinder 12, Fig. 3, the cathode 4 consists ...

An apparatus

Deposition method

Sputter deposition

Method of forming a crystalline layer, method of forming a battery half cell

Improved method of sputter deposition

... In order to control the degree of gas sorption of e.g. argon or reaction, e.g. oxidation, during sputtering of a film of e.g. zinc on a substrate 16 supported on the anode, a controlled voltage is supplied to an additional electrode 60. Both the electrode 60 and the anode are adjustable vertically. The cathode 12 is supplied with D.C. and has a shield 50 as described in Specification 1,050,855. The electrode 60 is in the form of crossed tantalum mixes or in a modification Fig. 3 (not shown) a ring. The anode and cathode are water cooled. A magnetic field is applied by external coils.

Method of deposition

Treatment of metals and article obtained.

NONSTOICHIOMETRIC NIOX CERAMIC(S) TARGET

PROCEDURE FOR THE USE OF HYDROGEN AND OXYGEN GAS IN SPUTTERING SEPARATION OF ALUMINUM-BEARING FILMS AND AFTERWARDS MANUFACTURE ALUMINUM-BEARING ONE OF FILMS

PROCEDURE FOR THE PRODUCTION RESTAURANT OF FUNCTIONAL OF PHOTO-CATALYTIC RANGES AND THUS AVAILABLE ARTICLES

ZERSTÄUBUNGSKATODE FOR COATING PROCESSES

MAGNETRONSPUTTERVORRICHTUNG IN FORM OF A SHEET METAL

DEVICE AND PROCEDURE FOR THE ATOMIZATION WITH A MOVABLE PLANAR TARGET

PROCEDURE FOR THE PRODUCTION OF A HEATDAMMING, HIGH TRANSPARENCIES OF LAYER SYSTEM AND WITH THIS PROCEDURE MANUFACTURE LAYER SYSTEM

VERFAHREN ZUR ABLAGERUNG BEI EINER GLIMMENT- LADUNG, SOWIE ANORDNUNG FUER DIE GLIMMENTLADUNG ZUR DURCHFUEHRUNG DES VERFAHRENS

VORRICHTUNG ZUM UEBERZIEHEN DER OBERFLAECHE EINES ELEKTRISCH LEITENDEN WERKSTUECKS

PROCEDURE FOR THE PRETREATMENT OF SUBSTRATES FOR PVD PROCEDURE

Verfahren und eine Vorrichtung zur kontinuierlichen Erzeugung einer flüssigen Stahlschmelze aus Schrott

Das Verfahren zur kontinuierlichen Erzeugung einer flüssigen Stahlschmelze aus Schrott umfasst:-Einschmelzen von Schrott in einem Schachtofen (1), -Austragen der erzeugten Stahlschmelze und der anfallenden Schlacke über eine im unteren Teil des Schachtofens (1) angeordnete Austragsöffnung (11), -Einbringen der ausgetragenen Stahlschmelze und der Schlacke in einen Durchlaufofen (13),-Überhitzen und Raffinieren der Schmelze im Durchlaufofen (13),-voneinander gesondertes kontinuierliches Austragen der Stahlschmelze und der Schlacke aus dem Durchlaufofen (13),-Abziehen von Ofengas aus dem Durchlaufofen (13), -Verwenden des Ofengases, ggf. nach einer zumindest teilweisen Entstaubung und/oder Reinigung, als Brenngas für einen Brenner (7) des Schachtofens (1).

PROCEDURE FOR APPLYING COATS ON THES SUBJECT OF MEANS OF MAGNETIC FIELD-SUPPORTED CATHODIC SPUTTERING IN THE VACUUM.

Lichtbogenverdampfungs-Beschichtungsquelle

The invention relates to an arc evaporation coating source (1), comprising: a target (2) made of a coating material to be evaporated, a ferromagnetic yoke (3) for influencing the evaporation of the coating material to be evaporated and at least one permanently magnetic body (4) for influencing the evaporation of the coating material to be evaporated. The ferromagnetic yoke (3) is arranged in contact with the target (2). The permanently magnetic body (4) is fastened to the target (2) by means of the ferromagnetic yoke (3).

MECHANISM TO THE VACUUM COATING OF SLIDING BEARINGS

DEVICE FOR THE COATING OF SUBSTRATES

MULTILEVEL ELECTRICALLEADING ANTI-REFLECTING COATING

PROCEDURE AND DEVICE FOR SPUTTERING MAGNETIC TARGET MATERIAL

DEVICE FOR THE CONDENSATION PRODUCTION OF A SCHICHTES ON A SUBSTRATE

NONSTOICHIOMETRIC NIOX CERAMIC(S) TARGET

NONSTOICHIOMETRIC NIOX CERAMIC(S) TARGET

NONSTOICHIOMETRIC NIOX CERAMIC(S) TARGET

Оснастка подложкодержателя для нанесения контактов на гетероструктурные солнечные элементы

Обеспечивается одиночная загрузка гетероструктурных солнечных элементов в магнетронные системы орбитального типа с небольшой производительностью. Техническим результатом является недопущение осаждения материала мишени на край или торец гетероструктурного солнечного элемента, недопыления материала мишени в местах, близких к изоляционной кромке гетереструктурного солнечного элемента, обеспечение низкого веса оснастки. Оснастка подложкодержателя содержит в целом прямоугольные сплошной держатель и маску. На фронтальной стороне маски и на тыльной стороне держателя выполнены заглубления под клипсы, скрепляющие маску и держатель. Держатель и маска выполнены со скруглениями по их контурам и имеют скошенные углы. Маска содержит внутреннюю наклонную стенку. На тыльной стороне маски выполнена выемка, ограниченная внутренней вертикальной стенкой и внутренней горизонтальной стенками, образующая посадочное место для гетероструктурного солнечного элемента. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 190 811 U1 (51) МПК C23C 14/04 (2006.01) C23C 14/35 (2006.01) C23C 14/50 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК C23C 14/04 (2019.05); C23C 14/35 (2019.05); C23C 14/50 (2019.05) (21)(22) Заявка: 2018127547, 26.07.2018 (24) Дата начала отсчета срока действия патента: 12.07.2019 Приоритет(ы): (22) Дата подачи заявки: 26.07.2018 (45) Опубликовано: 12.07.2019 Бюл. № 20 2539487 C2, 20.01.2015. RU 2437964 C2, 27.12.2011. RU 2308538 C1, 20.10.2007. JP 2009161817 A, 23.07.2009. (54) Оснастка подложкодержателя для нанесения контактов на гетероструктурные солнечные элементы (57) Реферат: Обеспечивается одиночная загрузка маску. На фронтальной стороне маски и на гетероструктурных солнечных элементов в тыльной стороне держателя выполнены магнетронные системы орбитального типа с заглубления под клипсы, скрепляющие маску и небольшой производительностью. Техническим держатель. Держатель и маска выполнены со результатом является ...

Устройство для нанесения многослойных покрытий

Полезная модель относится к плазменной технике, а именно к устройствам для нанесения оптических, защитных и других многослойных покрытий на поверхности подложек путем вакуумного распыления металлов, и может быть использована для нанесения наноструктурированных покрытий, применяющихся в рентгеновской и нейтронной оптике. Устройство для нанесения многослойных покрытий содержит герметизированную рабочую камеру с закрепленными на боковой стенке по меньшей мере одним ионным источником, и по меньшей мере двумя магнетронами, многоканальную систему напуска рабочего газа, вакуумную систему, шлюзовую камеру, отделенную от рабочей камеры вакуумным затвором, реверсивную камеру, транспортную систему линейного перемещения с держателем подложек и контрольно-измерительные элементы расхода газа и давления, взаимосвязанные с блоком управления технологическими процессами, связанным с запорно-регулирующими элементами. Устройство также содержит контрольно-измерительные элементы скорости осаждения покрытия, установленные напротив каждого магнетрона и взаимосвязанные с блоком управления технологическими процессами, связанным с приводом транспортной системы, выполненным на основе сервопривода и прецизионного безлюфтового редуктора с возможностью управления скоростью перемещения в диапазоне 10-300 мм/с. Технический результат заключается в оптимизации контроля динамики осаждения пленкообразующих материалов для своевременной стабилизации режима напыления с возможностью высокоточной корректировки скорости движения подложки при каждом проходе, что обеспечивает напыление наноструктурированных слоев заданной толщины и межслойной шероховатости, расширяя функциональные возможности устройства. 1 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 196 898 U1 (51) МПК C23C 14/35 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК C23C 14/35 (2020.02) (21)(22) Заявка: 2019137249, 19.11.2019 (24) Дата начала отсчета срока действия патента: Дата ...

Integrated anode and activated reactive gas source for use in a magnetron sputtering device

The invention relates to an integrated anode and activated reactive gas source for use in a magnetron sputtering device and a magnetron sputtering device incorporating the same. The integrated anode and activated reactive gas source comprises a vessel having an interior conductive surface, comprising the anode, and an insulated outer body isolated from the chamber walls of the coating chamber. The vessel has a single opening with a circumference smaller that that of the vessel in communication with the coating chamber. Sputtering gas and reactive gas are coupled through an input into the vessel and through the single opening into the coating chamber. A plasma is ignited by the high density of electrons coming from the cathode and returning to the power supply through the anode. A relatively low anode voltage is sufficient to maintain a plasma of activated reactive gas to form stoichiometric dielectric coatings.

Film forming apparatus and film forming method

The present invention provides a film forming apparatus and a film forming method which are unlikely to be affected by changes in size and shape of a shield board caused by a recovery process. A film forming apparatus includes a shield board surrounding a sputtering space between a process-target substrate on a stage and a target facing each other in a vacuum chamber, and forms a film on the process-target substrate by causing at least one kind of reactive gas and a film forming material to react with each other. The film forming apparatus is configured to control a ratio of the flow rate of the gas to be introduced into the sputtering space to the flow rate of the gas to be introduced into a space between an inner wall of the vacuum chamber and the shield board, based on a pressure value of the sputtering space measured by pressure detection means.

Reactive sputtering with multiple sputter sources

The apparatus ( 1 ) for coating a substrate ( 14 ) by reactive sputtering comprises an axis ( 8 ), at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ) and a power supply connected to the targets ( 11,12 ), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate ( 14 ) by coating a substrate ( 14 ) by reactive sputtering in an apparatus ( 1 ) comprising an axis ( 8 ). The method comprises a) providing a substrate ( 14 ) to be coated; b) providing at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ); c) alternatively operating said targets ( 11,12 ) as cathode and anode during coating. Preferably, the targets ( 11,12 ) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

Coating, article coated with coating, and method for manufacturing article

A coating includes a zirconium yttrium carbon-nitride layer including a first surface and an opposite second surface, the atomic carbon content and the atomic nitrogen content in the zirconium yttrium carbon-nitride layer gradually increasing from the first surface to the second surface.

Slide Parts and Equipment Including Same

It is an objective of the invention to provide a slide part in which a seal member formed of an elastic body is in sliding contact with a hard member. There is provided a slide part comprising: a hard member having an amorphous carbon coating containing nitrogen formed on an outermost surface of a substrate; and a seal member formed of an elastic body, the seal member being in sliding contact with the hard member, wherein: content of the nitrogen in the coating is 3 at. % or more and 25 at. % or less, taking a total content of the carbon and the nitrogen in the coating as 100 at. %; the seal member contains fluorine at least in a sliding contact surface region thereof; and content of the fluorine in the surface region of the seal member is equal to or more than the nitrogen content in the coating.

Wear resistant coating for brake disks with unique surface appearance and methods for coating

A brake disk including carbon steel, stainless steel or a ceramic composite material and coated with a coating material that is wear and corrosion resistant and when applied properly allows for the coated surface to have a variety of “textured” appearances. For example, the coated surface can be made to look like woven carbon fiber. The aesthetically pleasing, wear and corrosion resistant coating overlays wear surfaces and portions of the brake disk that will be, in many cases, visible when the brake disk is installed on the vehicle. The coating includes a first layer of a metal, such as a pure titanium metal, and a second layer that can include a Nitride, Boride, Carbide or Oxide of the metal used in the first layer. The coating can be applied using a physical vapor deposition source such as a cathodic arc source with a controlled gas atmosphere.

Method and apparatus to produce high density overcoats

A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.

High density plasma etchback process for advanced metallization applications

A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.

Sputtering apparatus

A sputtering apparatus includes a target electrode capable of mounting a target, a first support member which supports the target electrode, a magnet unit which forms a magnetic field on a surface of the target, a second support member which supports the magnet unit, and a force generation portion which is provided between the first support member and the second support member, and generates a second force in a direction opposite to a first force that acts on the second support member by an action of the magnetic field formed between the target and the magnet unit, wherein the second force has a magnitude which increases as the magnet unit comes closer to the target electrode.

Methods of forming molybdenum sputtering targets

In various embodiments, tubular sputtering targets are produced by forming a tubular billet at least by pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet, and heat treating the worked billet.

Method for determining process-specific data of a vacuum deposition process

A method for determining process-specific data of a vacuum deposition process, in which a substrate is coated in a vacuum chamber by a material detached from a target connected to a magnetron, an optical emission spectrum being recorded and process-significant data of the vacuum deposition process being determined therefrom for further processing in measurement or regulating processes, is optimized to minimize errors in the determination of process-significant data. At least three intensities of spectral lines of at least two process materials are determined from the optical emission spectrum. From these, single and multiple intensities are mathematically correlated with and to one another and a process-significant datum, which is used in subsequent measurement or regulating processes, is determined from the relation results by a further mathematical relation.

Method of coating metal shell with pure white film

A method of coating a pure white film includes a first step of providing a metal shell, a second step of forming a bonding layer on a surface of the metal shell by a first magnetron sputtering process, and a third step of forming a pure white layer on a surface of the bonding layer by a second magnetron sputtering process. The bonding layer includes chromium nitride. In the second process, aluminum and chromium corporately serves as targets. Oxygen serves as a reactive gas. A ratio of a bombarding power of the aluminum to that of the chromium is about 12:1. A bias voltage ranges from 180 volts to 220 volts. The second magnetron sputtering process lasts for about 58 to 62 minutes and goes on under a temperature ranged from 180° C. to 220° C. And the pure white layer includes aluminum oxide and chromium oxide.

Coated article having antibacterial effect and method for making the same

A coated article is described. The coated article includes a substrate, a copper layer formed on the substrate, a compound copper-zinc layer formed on the copper layer, and a zinc oxide layer formed on the compound copper-zinc layer. A method for making the coated article is also described.

SPUTTER DEPOSITION APPARATUS

A sputter deposition apparatus can sputter the entire sputtering surface of a target, and thereby increase the usage efficiency of the target and prevent arcing. An adhesion-preventing member, which surrounds the outer periphery of a sputtering surface of an electrically-conductive target , is formed by insulating ceramic. The target is sputtered in a reaction gas atmosphere while moving a magnet device between a position where the entire outer periphery of an outer peripheral magnet is on the inside of the outer periphery of the sputtering surface and a position where a part of the outer periphery of the outer peripheral magnet protrudes to the outside of the outer periphery of the sputtering surface. Since the entire sputtering surface of the target is sputtered, an insulating compound does not accumulate on the target and arcing does not occur. 1. A sputter deposition apparatus , comprising:a vacuum chamber;a vacuum evacuation device evacuating the inside of the vacuum chamber;a gas introduction system introducing gas into the vacuum chamber;a target having a sputtering surface exposed inside the vacuum chamber;an adhesion-preventing member disposed inside the vacuum chamber and provided to the target so as to surround a periphery of the sputtering surface of the target;a magnet device arranged on a rear surface side opposite to the sputtering surface of the target;a power source device applying a voltage to the target; anda moving device which moves the magnet device in a direction parallel to the rear surface of the target,wherein the magnet device has a substantially ring-shaped outer peripheral magnet which faces toward the rear surface of the target and a center magnet disposed on the inside of the ring formed by the outer peripheral magnet,wherein a polarity of a magnetic pole of a portion at which the outer peripheral magnet faces toward the rear surface of the target and a polarity of a magnetic pole of a portion at which the center magnet faces toward ...

SPUTTER DEPOSITION APPARATUS

A sputter deposition apparatus can sputter a wider surface area of a sputtering surface of a target in comparison to an area that could be sputtered by a conventional apparatus. An adhesion-preventing member surrounding the outer periphery of a sputtering surface of a target made of a metal material is formed by insulating ceramic. The target is sputtered while moving a magnet device between a position where the entire outer periphery of an outer peripheral magnet is on the inside of the outer periphery of the sputtering surface and another position where a part of the outer periphery of the outer peripheral magnet protrudes out to the outside of the outer periphery of the sputtering surface. 1. A sputter deposition apparatus , comprising:a vacuum chamber;a vacuum evacuation device evacuating the inside of the vacuum chamber;a gas introduction system introducing a sputtering gas into the vacuum chamber;a target having a sputtering surface to be sputtered which is exposed inside the vacuum chamber;a magnet device arranged on a rear side of the sputtering surface of the target and movable relative to the target; anda power source device applying a voltage to the target,wherein the magnet device has a center magnet disposed with an orientation to generate a magnetic field on the sputtering surface and an outer peripheral magnet disposed in a continuous shape on a periphery of the center magnet,wherein the center magnet and the outer peripheral magnet are disposed in such a manner that the magnetic poles of reverse polarities thereof are oriented toward the sputtering surface,the sputter deposition apparatus, further comprising:an adhesion-preventing member made of insulating ceramic disposed at an end of the target,wherein a surface including the sputtering surface among the surface of the target is discontinuous, so as to surround a periphery of the sputtering surface, andwherein the magnet device moves between a position where the entire outer periphery of the outer ...

SPUTTERING DEPOSITION APPARATUS AND ADHESION PREVENTING MEMBER

An adhesion-preventing member from which a thin film of an adhered material is not peeled off during a film deposition process and a sputter deposition apparatus having the adhesion-preventing member. Adhesion-preventing members to and are made of AlO; and an arithmetically average roughness of that adhering surface to which the sputtered particles are to be attached is between at least 4 μm and at most 10 μm to make the adhered materials difficult to be peeled off. The sputter deposition apparatus includes the adhesion-preventing members to and , arranged at positions such as surrounding outer peripheries of sputtering surfaces to of targets to , or surrounding an outer periphery of a film-forming face of a substrate 1. A sputter deposition apparatus for forming a film on a film deposition surface of a substrate arranged at a position facing a sputtering surface of a target , said sputter deposition apparatus comprising:a vacuum chamber;a vacuum evacuation device evacuating the inside of the vacuum chamber;a gas introduction system introducing a gas into the vacuum chamber;a target having a sputtering surface exposed inside the vacuum chamber;an electric power supply for applying a voltage to the target; andan adhesion-preventing member arranged at a position in which sputtered particles sputtered from the sputtering surface of the target are to be attached,{'sub': 2', '3, 'wherein the adhesion-preventing member comprises AlO, and an arithmetically average roughness of that adhering face of a surface of the adhesion-preventing member to which the sputtered particles are attached is between at least 4 μm and at most 10 μm.'}2. The sputter deposition apparatus according to claim 1 , wherein the adhesion-preventing member comprises a target-side adhesion-preventing member arranged for the target such that the target-side adhesion-preventing member surrounds the sputtering surface of the target.3. The sputter deposition apparatus according to claim 2 , whereinthe ...

Film formation apparatus and film formation method

A film formation apparatus of the present invention has two sputtering evaporation sources each of which includes an unbalanced magnetic field formation means formed by an inner pole magnet arranged on the inner side and an outer pole magnet arranged on the outer side of this inner pole magnet, the outer pole magnet having larger magnetic line density than the inner pole magnet, and a target arranged on a front surface of the unbalanced magnetic field formation means, and further has an AC power source for applying alternating current whose polarity is switched with a frequency of 10 kHz or more between the targets of the two sputtering evaporation sources so as to generate discharge between both the targets and perform film formation.

ARC DEPOSITION SOURCE HAVING A DEFINED ELECTRIC FIELD

The invention relates to an arc deposition device, comprising a cathode, an anode, as well as a voltage source for putting the anode at positive potential relative to the cathode. The device also comprises magnetic elements, which cause a magnetic field over the cathode surface, wherein the anode is arranged in the vicinity of the cathode in such a way that the magnetic field lines exiting from the cathode surface hit the anode. 1. Arc deposition device , comprising:a cathode comprising a surface with the material that is to be evaporated,magnetic means that lead to a magnetic field over the surface,an anode for absorbing the electrons that are extracted out of the cathode during the evaporation process,a voltage source for putting the anode at least partly at positive potential relative to the cathode,characterized in thatthe anode in the vicinity of the cathode is designed in such a way that the magnetic field lines that exit from the surface of the cathode hit the anode if they do not exit from the surface at a central area of the cathode.2. Arc deposition device according to claim 1 , characterized in that the position and geometry of the anode in relation to the cathode are chosen in such a manner that the magnetic field lines hit the surface of the anode at an angle of over 45° and preferably essentially perpendicularly.3. Arc deposition device according to claim 2 , characterized in that the position and geometry of the anode in relation to the cathode are chosen in such a manner that the magnetic field lines and the electric field lines that hit the anode run essentially parallel to one another.4. Arc deposition device according to claim 1 , characterized in that in the central area measures have been taken that essentially prevent its erosion during operation of the deposition device.5. Arc deposition device according to claim 4 , characterized in that the measures comprise a shutter in the central area of the cathode surface.6. Vacuum treatment device with ...

Glazing panel

The subject of the invention is a glazing unit comprising a glass substrate ( 1 ) equipped on one of its faces, intended to form face 1 of said glazing unit in the use position, with a thin-film multilayer comprising, from the substrate ( 1 ), a film ( 2 ) of a transparent electrically conductive oxide, an intermediate film ( 3 ) having a refractive index lying in the range from 1.40 to 1.55 and having an optical thickness Y, and a photocatalytic film ( 4 ) the optical thickness X of which is at most 50 nm, said optical thicknesses X and Y, expressed in nanometers, being such that: 110· e −0.025X ≦Y ≦135· e −0.018X

Thin film manufacturing method, thin film manufacturing device, and liquid crystal display device manufacturing method

Provided is a thin film manufacturing method which is capable of reducing foreign matters to be adhered to a substrate in number while lowering the arcing count. The thin film manufacturing method involves placing a magnet unit ( 5 ) which includes a first magnet ( 51 ) and a second magnet ( 52 ). The first magnet ( 51 ) has a first polarity on its top face which is opposed to a target ( 94 ). The second magnet ( 52 ) has a second polarity on its top face and is arranged around the first magnet ( 51 ). The method also involves reducing a closest distance between an edge ( 52 a ) of the magnet unit ( 5 ) and an edge ( 94 a ) of the target ( 94 ) in a Y-direction as an amount of the target ( 94 ) used increases.

LIGHT-EMITTING PANEL, MANUFACTURING METHOD OF LIGHT-EMITTING PANEL, AND FILM FORMING SYSTEM

A light-emitting panel includes: a substrate; and a light-emitting functional multilayer formed on the substrate, wherein the light-emitting functional multilayer including a first functional layer and a second functional layer, a thickness of part of the first functional layer positioned in a first light-emitting region is smaller than a thickness of part of the first functional layer positioned in a second light-emitting region, a thickness of part of the second functional layer positioned in the first light-emitting region is greater than a thickness of part of the second functional layer positioned in the second light-emitting region, and when the light-emitting functional multilayer is viewed in a layering direction thereof, the first light-emitting region and the second light-emitting region are adjacent or distant from each other in a direction perpendicular to the layering direction, and each include a plurality of pixels that are each composed of a plurality of adjacent sub-pixels. 1. A light-emitting panel comprising:a substrate; anda light-emitting functional multilayer formed on the substrate, whereinthe light-emitting functional multilayer including a first functional layer and a second functional layer,a thickness of part of the first functional layer positioned in a first light-emitting region is smaller than a thickness of part of the first functional layer positioned in a second light-emitting region,a thickness of part of the second functional layer positioned in the first light-emitting region is greater than a thickness of part of the second functional layer positioned in the second light-emitting region, andwhen the light-emitting functional multilayer is viewed in a layering direction thereof, the first light-emitting region and the second light-emitting region are adjacent or distant from each other in a direction perpendicular to the layering direction, and each include a plurality of pixels that are each composed of a plurality of adjacent ...

METHOD FOR IMPROVING HYDROPHILICITY OF A COATING FILM THROUGH TREATMENT ON A SURFACE MORPHOLOGY AND SUPER-HYDROPHILIC GLASS COATING LAYER PRODUCED BY THE SAME

The present disclosure provides a method of improving hydrophilicity of a coating layer through surface morphology treatment and a super-hydrophilic glass coating layer produced using the same. The method includes forming a photocatalyst layer on a substrate; and heating the substrate having the photocatalyst layer formed thereon to a temperature of 500° C. to 600° C. to perform post-heat treatment, and increasing surface roughness of the photocatalyst layer. The photocatalyst layer has a surface contact angle of 30 degrees or less. 1. A method of improving hydrophilicity of a coating layer through surface morphology treatment , comprising:forming a photocatalyst layer on a substrate; andheating the substrate having the photocatalyst layer formed thereon to a temperature of 500° C. to 600° C. to perform post-heat treatment while increasing surface roughness of the photocatalyst layer, such that the photocatalyst layer has a surface contact angle of 30 degrees or less.2. The method according to claim 1 , wherein the forming a photocatalyst layer is performed by room temperature RF magnetron sputtering.3. The method according to claim 1 , wherein the photocatalyst layer comprises at least one oxide layer selected from among titanium oxide claim 1 , silicon oxide claim 1 , aluminum oxide claim 1 , iron oxide claim 1 , silver oxide claim 1 , copper oxide claim 1 , tungsten oxide claim 1 , zinc/tin alloy oxide claim 1 , zinc titanate claim 1 , molybdenum oxide claim 1 , zinc oxide claim 1 , strontium titanate claim 1 , cobalt oxide claim 1 , and chromium oxide layers.4. The method according to claim 1 , further comprising: forming a barrier layer between the substrate and the photocatalyst layer.5. The method according to claim 1 , wherein the post heat treatment is performed for 1 to 10 minutes.6. A super-hydrophilic glass coating layer subjected to surface morphology treatment to have a surface roughness (RMS) of 1.5 nm or higher by the method according to .7. The ...

Apparatus and method for depositing hydrogen-free ta-c layers on workpieces and workpiece

An apparatus for the manufacture of at least substantially hydrogen-free ta-C layers on substrates, which includes a vacuum chamber, which is connectable to an inert gas source and a vacuum pump, a support device in the vacuum chamber, at least one graphite cathode having an associated magnet arrangement forming a magnetron that serves as a source of carbon material, a bias power supply for applying a negative bias voltage to the substrates on the support device, at least one cathode power supply for the cathode, which is connectable to the at least one graphite cathode and to an associated anode and which is designed to transmit high power pulse sequences spaced at intervals of time, with each high power pulse sequence comprising a series of high frequency DC pulses adapted to be supplied, optionally after a build-up phase, to the at least one graphite cathode.

System and Method for Aligning Sputter Sources

Embodiments provided herein describe systems and methods for aligning sputtering sources, such as in a substrate processing tool. The substrate processing tool includes at least one sputtering source and a device. Each of sputtering sources includes a target having a central axis. The device has an axis and is detachably coupled to the at least one sputtering source. The device indicates to a user a direction in which the central axis of the target of the at least one sputtering source is oriented.

APPARATUS FOR FORMING GAS BLOCKING LAYER AND METHOD THEREOF

A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/mor more; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object. 1. A gas blocking layer forming apparatus comprising:a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed;a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed;a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam; andcommon sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.2. The apparatus of claim 1 , further comprising:a plasma limiter that is provided among the holding unit, the neutral particle generation unit, and the common sputtering unit and generates a magnetic field in a horizontal direction in order for negative ions not to move toward the target object by confining electrons in plasma.4. The apparatus of claim 3 ,wherein the holding unit is configured to make a reciprocating movement within the vacuum chamber.5. The apparatus of ...

METHOD OF MAKING COATED ARTICLES

A method of making a coated article includes providing a substrate; forming a nickel layer on the substrate by magnetron sputtering; forming a titanium layer on the nickel layer by magnetron sputtering; and applying a thermal oxidative treatment to the nickel and titanium layered substrate to form a catalyst layer and a self-cleaning layer. The self-cleaning layer includes metallic titanium, metallic nickel, nickel oxide and titanium dioxide. 1. A method of making a coated article , comprising steps of:providing a substrate;forming a nickel layer on the substrate by magnetron sputtering;forming a titanium layer on the nickel layer by magnetron sputtering; andapplying a thermal oxidative treatment to the nickel and titanium layered substrate to form a catalyst layer and a self-cleaning layer, the self-cleaning layer including metallic titanium, metallic nickel, nickel oxide and titanium dioxide.2. The method as claimed in claim 1 , wherein in the step of applying thermal oxidative treatment claim 1 , the metallic nickel in the nickel layer and the metallic titanium in the titanium layer partially oxidize claim 1 , forming the self-cleaning layer; and the remainder of the non-oxidized nickel layer forms the catalyst layer.3. The method as claimed in claim 2 , wherein in the step of thermal oxidative treatment claim 2 , the substrate with the nickel layer and the titanium layer is heated to reach a temperature in a range of 400° C. to 700° C. at a speed in a range of 15° C./min to 30° C./min claim 2 , and the temperature is maintained for 40 min to 90 min.4. The method as claimed in claim 3 , wherein during the thermal oxidative treatment claim 3 , the substrate with the nickel layer and the titanium layer is placed in a air chamber containing less than 2% oxygen by volume but greater than 0%.5. The method as claimed in claim 1 , wherein in the step of forming the nickel layer claim 1 , a nickel target is provided and a bias voltage in a range of −100 V to −200 V is ...

MAGNETRON SPUTTERING APPARATUS

A magnetron sputtering apparatus comprises, within a vacuum chamber (), a substrate support () holding a substrate () with an upward-facing plane substrate surface () which is to be coated. The substrate () may be a disk of, e.g., 200 mm diameter. At a distance from a centre plane () two oblong targets (77) are symmetrically arranged which are inclined towards the centre plane () so as to enclose an acute angle (β; −β) of between 8° and 35° with the plane defined by the substrate surface (). Above the substrate surface () a collimator () with equidistant rectangular collimator plates is arranged. With this configuration high uniformity of the coating is achievable, in particular, if the distance of the collimator () from the substrate surface () is chosen as a multiple n of the extension of the collimator () perpendicular to the said surface, preferably with n equalling 1 or 2, for suppressing ripple. 116-. (canceled)17. A magnetron sputtering apparatus comprising:{'b': 2', '4', '5', '4', '6', '3, 'a substrate support () defining a plane substrate surface () within a substrate plane, with a longitudinal centre plane () perpendicularly intersecting the substrate surface () along a longitudinal centre line (), for carrying a substrate (),'}{'b': 7', '7', '2', '5', '7', '7', '8', '8', '9', '9', '4', '8', '8', '5', '9', '9', '11', '11', '9', '9', '4', '9', '9', '10', '10', '8', '8', '9', '9', '8', '8', '4, 'i': a,', 'b', 'a,', 'b', 'a;', 'b', 'a;', 'b', 'a;', 'b', 'a;', 'b', 'a;', 'b', 'a;', 'b', 'a,', 'b', 'a;', 'b', 'a;', 'b', 'a;', 'b', 'a,', 'b, 'a target assembly with two substantially oblong targets () arranged in parallel above the substrate support () at opposite sides of the longitudinal centre plane (), each target () having a target plate () with a target surface () facing the substrate surface (), the target plate () being inclined with respect to the substrate plane towards the centre plane () about a longitudinal axis such that the surface normal of the ...

MAGNETIC FIELD GENERATOR, MAGNETRON CATHODE AND SPATTERING APPARATUS

A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines can include a ring-shaped outer magnetic body having a pole axis in a parallel direction (X-direction) with respect to the target surface, a center magnetic body arranged on an inner side of the outer magnetic body and having a pole axis in a parallel direction (X-direction) with the direction of the pole axis of the outer magnetic body, a yoke plate for supporting the outer magnetic body and the center magnetic body from behind, and a magnetic permeable plate for changing a magnetic field distribution of the front surface of the target. The magnetic permeable plate is arranged so as to be supported by the yoke plate from behind. 1. A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines , comprising:a ring-shaped first magnetic body having a pole axis in a parallel direction with respect to a surface of the target,a second magnetic body arranged on an inner side of the first magnetic body and having a pole axis in a parallel direction with the pole axis direction of the first magnetic body,a magnetic permeable base supporting the first magnetic body and the second magnetic body from behind, anda magnetic field distribution change member for changing a magnetic field distribution on a front surface of the target;wherein the magnetic field distribution change member is arranged to be supported by the base from behind between the first magnetic body and the second magnetic body.2. The magnetic field generator according to claim 1 , whereinthe second magnetic body is configured by a ring-shaped magnetic body, andboth of the first magnetic body and the second magnetic body are configured by a magnet component formed by arranging a plurality of small magnets in an array so that one magnetic pole directs an outer side and the ...

MAGNETRON SPUTTERING APPARATUS AND FILM FORMING METHOD

A target is provided opposite to a wafer mounted on in a vacuum chamber, and a magnet array body is disposed above the target. In the magnet array body, ring-shaped magnet arrays are arranged to generate annular magnetic fields in the circumferential direction of the wafer, and a sputtering film formation is performed by switching between the magnetic fields. 1. A magnetron sputtering apparatus in which a target is disposed opposite to a substrate to be processed mounted in a vacuum chamber and magnet members are disposed on a back surface of the target , the apparatus comprising:a power supply unit configured to apply a voltage to the target;a plurality of magnetic pole array sets, each of which includes an outer ring-shaped magnetic pole array formed of magnetic poles arranged in a circumferential direction of the substrate and an inner ring-shaped magnetic pole array formed of magnetic poles arranged in the circumferential direction of the substrate inwardly of the outer ring-shaped magnetic pole array, arranged concentrically with each other, each of the magnetic pole array sets serving to generate a cusp magnetic field between the outer and the inner ring-shaped magnetic pole array and allow electrons to drift in the circumferential direction of the substrate;an operating unit configured to move the inner and/or the outer ring-shaped magnetic pole array of each of the magnetic pole array sets to temporally switch the magnetic pole array set which generates the cusp magnetic field; anda rotation unit configured to rotate the magnetic pole array sets along the circumferential direction of the substrate.2. The apparatus of claim 1 , wherein the gas supply path is provided in a processing space between the target and the substrate to supply a reactant gas for generating active species that reacts with the target and a plasma generating gas that is needed to activate the reactant gas.3. The apparatus of claim 1 , wherein a distance between the target and the ...

METHOD OF SWITCHING MAGNETIC FLUX DISTRIBUTION

In a method of switching magnet flux distribution, a magnet is arranged on a rear side of a backing plate with respect to a target holding side thereof in a magnetron sputtering cathode, and placing an article that exhibits ferromagnetism at room temperature on the target holding side of the backing plate or removing the article therefrom so that the magnet flux distribution is switched between a balanced distribution of the magnetic flux and unbalanced distribution of the magnetic flux. 1. A method of switching magnet flux distribution , comprising:arranging a magnet on a rear side of a backing plate with respect to a target holding side thereof in a magnetron sputtering cathode, andplacing an article that exhibits ferromagnetism at room temperature on the target holding side of the backing plate or removing the article therefrom so that the magnet flux distribution is switched between a balanced distribution of the magnetic flux and unbalanced distribution of the magnetic flux.2. The method of switching magnetron flux distribution according to claim 1 , wherein in case the article that exhibits ferromagnetism at the room temperature is removed claim 1 , an article that does not exhibit ferromagnetism at the room temperature is placed instead.3. The method of switching magnetron flux distribution according to claim 2 , wherein the article placed on the target holding side of the backing plate of the magnetron sputtering cathode is one selected from a group consisting of a middle pole claim 2 , a middle pole cover claim 2 , or an insulating body.4. The method of switching magnetron flux distribution according to claim 1 , wherein the magnetron sputtering cathode is a square-shaped sputtering cathode. This is a continuation application of Ser. No. 11/631,957 filed on Jan. 9, 2007, which is a PCT National Phase of PCT/JP2005/012968 filed on Jul. 7, 2005, which claims priorities of Japanese Patent Application No. 2004-203156 filed on Jul. 9, 2004 and No. 2004-232709 ...

Method and Apparatus for Producing Controlled Stresses and Stress Gradients in Sputtered Films

An enhanced sputtered film processing system and associated method comprises one or more sputter deposition sources each having a sputtering target surface and one or more side shields extending therefrom, to increase the relative collimation of the sputter deposited material, such as about the periphery of the sputtering target surface, toward workpiece substrates. One or more substrates are provided, wherein the substrates have a front surface and an opposing back surface, and may have one or more previously applied layers, such as an adhesion or release layer. The substrates and the deposition targets are controllably moved with respect to each other. The relatively collimated portion of the material sputtered from the sputtering target surface travels beyond the side shields and is deposited on the front surface of the substrates. The increase in relative collimation results in deposited films with desirable properties including but not limited to high levels of both readily controllable compressive stress and mechanical integrity without the use of ion bombardment. 1. A method of depositing a film on substrates by sputter deposition , comprising the steps of:providing a substrate holder adapted to receive at least one substrate, said substrate holder being affixed to a substantially circular carrier plate, wherein both the substrate and the carrier plate are adapted to synchronously rotate about their respective normal axes;providing at least two elongated, substantially identical deposition sources that are angularly spaced to average-out X-V anisotropy in a plane parallel to the substrate, said sources comprising substantially the same materials and operated to provide substantially the same deposition characteristics, having a long dimension positioned parallel to a carrier plate radius, with their surfaces facing the substrate substantially coplanar, said long dimension being substantially larger than a substrate dimension, and having a perpendicular ...

CRYSTALLINE ORIENTATION AND OVERHANG CONTROL IN COLLISION BASED RF PLASMAS

Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures. 1. A method of processing a substrate in a physical vapor deposition (PVD) chamber , comprising:applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas;sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; andcontrolling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure on the substrate.2. The method of claim 1 , further comprising:applying a DC power to the target to direct the plasma towards the target.3. The method of claim 1 , wherein controlling the plasma sheath voltage further comprises:controlling impedance between the substrate and ground.4. The method of claim 1 , wherein controlling the plasma sheath voltage further comprises:applying an RF energy to the substrate.5. The method of claim 1 , wherein controlling the plasma sheath voltage further comprises:controlling impedance between a process kit shield and ground, wherein the ...

Sputtering sources for high-pressure sputtering with large targets and sputtering method

A sputtering head comprises a receiving area for a sputtering target (target receptacle). The sputtering head comprises one or more magnetic field sources so as to generate a stray magnetic field. The magnetic north and the magnetic south of at least one magnetic field source, between which the stray field forms, are located 10 mm or less, preferably 5 mm or less, and particularly preferably approximately 1 mm apart. It was found that, notably when sputtering at a high sputtering gas pressure of 0.5 mbar or more, the degree of ionization of the sputtering plasma, and consequently also the ablation rate of the sputtering target, can be locally adjusted by such a locally effective magnetic field. This allows the thicknesses of the layers that are obtained to be more homogeneous over the surface of the substrate. Advantageously, the sputtering head additionally comprises a solid state insulator, which surrounds the base body comprising the target receptacle and the sputtering target (all connected to potential) and electrically insulates the same from the shield that spatially limits the material ablation to the sputtering target (connected to ground).

Coating of shield surfaces in deposition systems

A deposition chamber shield having a stainless steel coating of from about 100 microns to about 250 microns thick wherein the coated shield has a surface roughness of between about 300 microinches and about 800 microinches and a surface particle density of less than about 0.1 particles/mm 2 of particles between about 1 micron and about 5 microns in size and no particles below about 1 micron in size, and process for production thereof is disclosed.

PVD Hybrid Method for Depositing Mixed Crystal Layers

The present invention concerns a method for depositing mixed crystal layers with at least two different metals on a substrate by means of PVD methods. To provide a method of depositing mixed crystal layers with at least two different metals on a substrate by means of PVD methods, which gives mixed crystal layers which are as free as possible of macroparticles (droplets) and which have a proportion as high as possible of a desired crystalline phase and which are highly crystalline, it is proposed according to the invention that deposition of the mixed crystal layer is effected with simultaneous application of i) the cathode sputtering method of dual magnetron sputtering or high power impulse magnetron sputtering and ii) arc vapour deposition. 1. A method for depositing mixed crystal layers with at least two different metals on a substrate by means of PVD methods , wherein deposition of the mixed crystal layer is effected with simultaneous application of i) the cathode sputtering method of dual magnetron sputtering or high power impulse magnetron sputtering and ii) arc vapour deposition.2. A method according to claim 1 , wherein the mixed crystal layers are single-phase mixed crystal layers of mixed oxides claim 1 , carbides claim 1 , nitrides claim 1 , carbonitrides claim 1 , oxynitrides claim 1 , oxycarbides claim 1 , oxycarbonitrides claim 1 , borides claim 1 , boronitrides claim 1 , borocarbides claim 1 , borocarbonitrides claim 1 , borooxynitrides claim 1 , borooxocarbides claim 1 , borooxocarbonitrides and oxoboronitrides of the at least two different metals claim 1 , preferably single-phase mixed crystal layers of mixed oxides of the at least two different metals.3. A method according to claim 1 , wherein the first metal and the second metal are selected from the elements of the subgroups IVa to Vila of the periodic system claim 1 , lithium claim 1 , boron claim 1 , aluminium and silicon.4. A method according claim 1 , wherein the two different metals are ...

ELECTRICAL CONDUCTIVE MEMBER, METHOD FOR MANUFACTURING THE SAME, SEPARATOR FOR FUEL CELL, AND POLYMER ELECTROLYTE FUEL CELL

An electrical conductive member () includes a metal substrate (), an intermediate layer () formed on the metal substrate (), and an electrical conductive layer () formed on the intermediate layer (). The intermediate layer () contains a constituent of the metal substrate (), a constituent of the electrical conductive layer (), and a crystallization inhibiting component that inhibits crystallization in the intermediate layer (). According to this configuration, the electrical conductive member having excellent electrical conductivity and resistance to corrosion can be obtained. 112-. (canceled)13. An electrical conductive member , comprising:a metal substrate;an intermediate layer formed on the metal substrate and having a thickness of 30 nm to 200 nm; andan electrical conductive layer formed on the intermediate layer,wherein the intermediate layer contains: a constituent of the metal substrate; a constituent of the electrical conductive layer; and at least one element selected from the group consisting of helium, argon, krypton, boron, phosphorus, silicon, carbon and germanium, anda content ratio of the at least one element in the intermediate layer is in a range from 3 to 5 atom %.14. The electrical conductive member according to claim 13 , wherein the intermediate layer has at least one of an amorphous structure and a quasi-crystalline structure having a crystallite diameter smaller than a crystallite diameter of each of the metal substrate and the electrical conductive layer.15. The electrical conductive member according to claim 13 , wherein the metal substrate is constituted by aluminum or an aluminum alloy.16. A method for manufacturing an electrical conductive member claim 13 , comprising:removing an oxide film on a surface of a metal substrate;forming an intermediate layer on the metal substrate after removing the oxide film; andforming an electrical conductive layer on the intermediate layer after forming the intermediate layer,wherein the intermediate ...

MAGNETRON SPUTTERING DEVICE, METHOD FOR CONTROLLING MAGNETRON SPUTTERING DEVICE, AND FILM FORMING METHOD

A magnetron sputtering device is provided with: a target part positioned in such a manner as to face a substrate held by a substrate holding part; a power source that supplies power to the target part; a magnet part that moves back and forth along the rear of the target part; a chamber having side walls that are electrically grounded; and a power source control part that controls the power source in such a manner that, while the magnet part is away from approach points, which are points respectively closest to the side walls, a prescribed voltage is applied to the target part by the power source, but the prescribed voltage is reduced when the magnet part reaches one of the approach points. 1. A magnetron sputtering device , comprising:a substrate holding part that holds a substrate;a target part disposed so as to face the substrate held by the substrate holding part;a power source that supplies power to the target part;a magnet part that is disposed on a rear side of the target part, the rear side being a side of the target part opposite to the substrate, the magnet part moving back and forth along the rear side of the target part;a chamber with electrically grounded side walls that stores the substrate holding part, the target part, the power source, and the magnet part therein; anda power source control part that controls the power source such that when the magnet part is away from approach points, the approach points being points respectively closest to the side walls of the chamber, a prescribed voltage is applied from the power source to the target part, and when the magnet part reaches one of the approach points, the prescribed voltage is decreased.2. The magnetron sputtering device according to claim 1 , wherein the power source control part stops applying a voltage from the power source to the target part when the magnet part reaches one of the approach points.3. The magnetron sputtering device according to claim 1 , wherein the magnet part has a plurality ...

TARGET UTILIZATION IMPROVEMENT FOR ROTATABLE MAGNETRONS

Rotatable magnetron sputtering apparatuses are described for depositing material from a target while reducing premature burn through issues. The rotatable magnetron sputtering apparatus includes electric coils wound on pole pieces to modulate the magnetic fields at the ends of the magnetron magnetic assembly. Changing the direction of electric current moves the sputtering region alternately around its normal central position to decrease the rate of erosion depth at the ends of the target material. 1. A magnetic assembly for use in a cylindrical rotatable magnetron , comprising;a first magnet disposed toward a central portion of the magnetic assembly, the first magnet having a first magnetic orientation;a second magnet disposed toward an outer portion of the magnetic assembly, the second magnet having a second magnetic orientation that is opposite to the first magnetic orientation; andone or more electromagnetic coils between the first and second magnets, the one or more electromagnetic coils wound around one or more pole pieces, the one or more electromagnetic coils configured to provide a magnetic field having a third magnetic orientation that is parallel to one of the first and second magnetic orientations and opposite to the other of the first and second magnetic orientations.2. The magnetic assembly of claim 1 , wherein the one or more electromagnetic coils are disposed at end portions of the magnetic assembly.3. The magnetic assembly of claim 1 , wherein the one or more electromagnetic coils are arranged in an approximately curved fashion along a sputtering path at each end of the magnetic assembly.4. The magnetic assembly of claim 1 , wherein the first and third magnetic orientations are parallel.5. The magnetic assembly of claim 1 , wherein the second and third magnetic orientations are parallel.6. The magnetic assembly of claim 1 , wherein the first magnet comprises a plurality of magnets.7. The magnetic assembly of claim 1 , wherein the second magnet ...

Vehicle piston ring having multi-layer coating

Disclosed is a piston ring having a multi-layer coating. The piston ring includes a buffer layer, a intermediate layer, a TiAlN/CrN nano multilayer, and a TiAlCN layer. The buffer layer is coated over a base material of a piston ring. The intermediate layer is coated over the buffer layer. The TiAlN/CrN nano multilayer is coated over the intermediate layer. The TiAlCN layer is coated over the TiAlN/CrN nano multilayer as an outermost surface layer.

Apparatus and method for multi-source deposition

Exemplary embodiments provide a multi-source deposition method and apparatus for the provision of coatings within relatively tight tolerances. An apparatus may be provided including control circuitry and a plurality of deposition sources for coating a substrate. The sources may be disposed a selectable distance away from the substrate and/or may be tilted at a selected angle. The control circuitry may utilize information indicative of an emission pattern associated with each of the sources to adjust a power to each of the sources during coating of the substrate. By rotating the substrate relative to the sources and/or controlling parameters such as source height, tilt angle, and source power, a substantially uniform coating thickness may be achieved on the substrate.

SPUTTERING APPARATUS INCLUDING TARGET MOUNTING AND CONTROL

A sputtering chamber includes at least two sputtering targets, one of the at least two targets disposed on a first side a substrate conveyor extending within the chamber, and another of the at least two targets disposed on a second side of the conveyor. The at least two targets may be independently operable, and at least one of the targets, if inactivated, may be protected by a shielding apparatus. Both of the at least two targets may be mounted to a first wall of a plurality of walls enclosing the sputtering chamber. 168-. (canceled)69. A sputtering target assembly for a single sputtering chamber of a sputter coating apparatus , comprising:a lid to seal off an opening to the chamber, the lid including a first part and a second part, the first part being separable from the second part;a first pair of sputtering targets mounted to the first part of the lid for placement within the chamber, at a first distance from the lid, when the lid seals off the opening, each target of the first pair of sputtering targets being cylindrical and including a longitudinal axis about which the corresponding target of the first pair rotates, and both longitudinal axes of the first pair being located at the first distance, when the lid seals off the chamber; anda second pair of sputtering targets mounted to the second part of the lid for placement within the chamber, at a second distance from the lid, when the lid seals off the opening, each target of the second pair of sputtering targets being cylindrical and including a longitudinal axis about which the corresponding target of the second pair rotates, and both longitudinal axes of the second pair being located at the second distance, when the lid seals off the chamber;wherein the second distance is greater than the first distance such that the second pair of sputtering targets are spaced apart from the first pair of sputtering targets to allow conveyance of a substrate in between the first and second pairs of sputtering targets in a ...

COMPOSITE TARGET AND METHOD FOR MANUFACTURING THE SAME

A composite target and method for manufacturing the same are described, which manufactures the composite target according an etching condition of a waste target. The waste target is generated after an original target at least haying a substrate layer and a metal layer is processed through a sputtering process by a sputtering apparatus with a first magnetic field line distribution. By determining the etching condition caused by the first magnetic field line distribution, a magnetic layer with a second magnetic field line distribution is decided to dispose on the original target. The metal layer is formed on the substrate layer and/or the magnetic layer. The substrate layer, the magnetic layer and the metal layer are combined by a connection layer to form the composite target. The composite target can provide the second magnetic field line distribution to adjust the first magnetic field line distribution. 1. A method for manufacturing a composite target , which manufactures the composite target according an etching condition of a waste target , wherein the waste target is generated after an original target at least having a substrate layer and a metal layer is processed through a sputtering process by a sputtering apparatus with a first magnetic field line distribution , and the method includes:determining the etching condition of the waste target caused by the first magnetic field line distribution to decide a second magnetic field line distribution, wherein the second magnetic field line distribution is used to adjust the first magnetic field line distribution applied on the composite target while being disposed on the sputtering apparatus;disposing a magnetic layer corresponding to the second magnetic field line distribution on the substrate layer of the original target;disposing the metal layer on the magnetic layer and the substrate layer; anddisposing a connection layer among the substrate layer, the magnetic layer and the metal layer to combine the substrate ...

HIGH TARGET UTILIZATION MOVING MAGNET PLANAR MAGNETRON SCANNING METHOD

A method for operating a moving magnet magnetron is provided enhanced target utilization. A magnet pack is moved in a first 2-D motion profile with a variable velocity. The magnet pack is then translated in a second 2-D motion profile that varies relative to the first profile. This process moving and translating is repeated to provide enhanced target utilization. These varied movement and translation profiles preclude the formation of a diamond-shaped erosion area common to the prior art. Representative to such profiles are intersecting sigmoidal curves. The resultant target is characterized by a metal from that has better target utilization as the wear pattern precludes the diamond shaped erosion area common to the prior art and instead has a multiple erosion peaks. 1. A method for operating a moving magnet magnetron to provide enhanced target utilization comprising:moving a magnet pack in a first 2-D motion profile, said first motion profile having a variable velocity;translating the magnet pack in a second 2-D motion profile that varies relative to the first profile;repeating the moving and the translating steps to provide enhanced target utilization.2. The method of wherein said first motion profile is a pair of 2-D intersecting sigmoidal curves forming a butterfly pattern.3. The method of wherein the butterfly pattern has zero acceleration at a point of inflection thereof4. The method of wherein said second motion profile has a non-constant velocity.5. The method of wherein the repeating step varies a ratio between said first motion profile and said second motion profile.6. The method of wherein the enhanced target utilization has a diamond pattern and additional wear proximal to at least one side of the diamond pattern.7. The method of wherein the first motion profile has the variable velocity such that said magnet pack spends approximately an equal amount of time at each location within said target and across a substrate transfer direction.8. The method of ...

RF SUBSTRATE BIAS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS)

An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias. 1. An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cmcomprising:a power supply operably connected to the magnetron to charge the magnetron and configured for administering a first pulse to the magnetron;a RF electrical bias device operably connected to the substrate and configured to discharge the magnetron according to a bias pulse; anda synchronization device operably connected to the power supply and to the RF electrical bias device; wherein the synchronization device is configured to synchronize a frequency and a time delay of the first pulse with the bias pulse.2. The apparatus according to claim 1 , wherein the power supply is configured for administering the first pulse to the magnetron with a duty cycle for the first pulse between 0.01% and 20% claim 1 , and the frequency in the range of 1 Hz to 20 kHz.3. The apparatus according to claim 1 , wherein the power supply is configured for administering the first pulse to the magnetron with a duty cycle for the first pulse between 2% and 50%.4. The apparatus according to claim 1 , wherein the synchronization device is configured to administer the bias pulse before the first pulse with the time delay between 0.1 μs to 500 μs.5. The apparatus according to claim 1 , further comprising:a matching unit ...

COATING SUBSTRATES WITH AN ALLOY BY MEANS OF CATHODE SPUTTERING

The invention relates to a target for coating a substrate with an alloy by means of cathode sputtering, said alloy having at least one first material and one second material as alloy components. The surface of the target has at least one first section made of the first material and one second section made of the second material. The two sections adjoin each other and form a common boundary line. The invention further relates to a device and a method for coating a substrate with an alloy by means of cathode sputtering using the target according to the invention. 13. A method for coating a substrate () , which has a width and a length , with an alloy comprising at least a first and a second material as alloy components and having a variable alloy ratio by means of magnetron cathode sputtering , comprising [{'b': '1', '(a1) a target () comprising the alloy components and'}, {'b': 2', '1', '3', '5', '1, '(a2) a magnet arrangement () which is arranged behind the target () when viewed from the substrate () for forming at least one erosion section () on the surface of the target (),'}, 'wherein, '(a) a magnetron sputtering cathode with'}{'b': 1', '11', '12, '(b) the surface of the target () comprises at least a first section () of the first material and a second section () of the second material,'}{'b': 11', '12', '4', '1, '(c) the first section () and the second section () adjoin each other and form a common boundary line () on the surface of the target (), and'}{'b': 5', '4', '5', '1', '5', '11', '5', '2', '5', '12, '(d) the erosion section () is positioned in the area of the boundary line () so that a first part (-) of the erosion section () lies on the first target section () and a second part (-) of the erosion section () lies on the second target section (),'}characterized by [{'b': 5', '4, 'claim-text': 'and/or', '(e1) moving the erosion section () substantially transversely with respect to the boundary line (),'}, {'b': 4', '1, 'claim-text': 'and/or', '(e2) ...

SOFT SPUTTERING MAGNETRON SYSTEM

A sputtering method and apparatus having at least one set of dual rotatable cylindrical sputtering targets mounted in a vacuum chamber. Magnet assemblies in hollow target cylinders provide erosion zones running long the parallel sides of a racetrack that act as target flux sources towards a substrate. These parallel erosion zones have a highly concentrated plasma density for rapid sputtering of the target and any reactive material. Features include the angular distance between normals to adjacent parallel erosion zones, the angle greater than 45° subtended at the center of the cylindrical target, placement of the substrate with respect to the targets, and pointing angles (orientation or tilt) of the racetracks toward the substrate and/or each other. These parameters form a relatively wide and efficient constant flux deposition region at the substrate, and allows for high deposition rates at constant reactive gas partial pressures with substantially uniform film stoichiometry and thickness. 117-. (canceled)18. A vacuum sputtering system for eroding and depositing target material on a substrate , comprising:at least a first and a second cylindrical tubular target, each target having a longitudinal axis, an outside surface and a fixed length, each of the at least first and second cylindrical tubular targets being rotatable about the longitudinal axis of the cylindrical tubular target, wherein the second rotatable cylindrical tubular target is positioned relative to the first target such that axes of the at least first and second targets are parallel to each other;at least a first and a second magnet assembly respectively disposed within and along the length of the at least first and the second tubular targets, each magnet assembly configured to provide a magnetic field racetrack over the outside surface of each tubular target, the magnetic field racetrack confining a plasma gas to erode target material of each target from a pair of substantially parallel erosion zones ...

THERMOELECTRIC CONVERTER ELEMENT AND CONDUCTIVE MEMBER FOR THERMOELECTRIC CONVERTER ELEMENT

Disclosed is a low-cost thermoelectric converter element which is not decreased in electrical conductivity and thermal conductivity even under high temperature conditions. Specifically disclosed is a thermoelectric converter element () which is characterized by comprising a single element composed of a sintered cell () and a pair of electrodes () respectively attached to a heating surface which is one surface of the sintered cell () and a cooling surface which is a surface opposite to the heating surface, a conductive member () for electrical connection with an electrode other than the electrodes (), and a metal layer () composed of at least one of gold and platinum. The thermoelectric converter element () is also characterized in that an electrode () of the single element is electrically connected with the conductive member () through the metal layer (). 1. A method of manufacturing a thermoelectric conversion element including a single member , a conductive member , and a conductive layer ,the single member including a rectangular cuboid or cubic sintered body cell having a heating surface and a cooling surface opposite the heating surface, a first electrode on the heating surface, and a second electrode on the cooling surface,the conductive member configured to be connected to a third electrode, including nickel, and a ratio of an area of each of the first electrode and the second electrode to a cross-sectional area of the conductive member from about 50:1 to about 500:1,the conductive layer including at least one of gold and platinum, and provided at the conductive layer,the method comprising:(A) sintering a first conductive paste on the heating surface and the cooling surface of the sintered body cell to form the first electrode and the second electrode, thereby forming the single member;(B) forming the conductive layer on a surface of the conductive member by sputtering or vacuum evaporation; and(C) sintering a second conductive paste including metal particles ...

ELECTRICALLY CONDUCTIVE FILM, PREPARATION METHOD AND APPLICATION THEREFOR

An electrically conductive film is provided, which comprises a film formed of zinc oxide adulterated with alumina, silicon dioxide and magnesia. The transparence of the zinc oxide film is increased by means of magnesium ion in the adulterated magnesia widening the transparent window of the zinc oxide film, the conductivity is increased and thus the resistivity is reduced by means of adulterating with alumina and silicon dioxide, and the resistivity during working is stabilized by means of adulterating with alumina, silicon dioxide and magnesia. A method for manufacturing the electrically conductive film and an application therefor are also provided. The method has simple process, mild conditions, low cost and high productivity, which is suit for industrialized produce. 1. An electrically conductive film comprising a film formed of zinc oxide , wherein said film formed of zinc oxide is doped with alumina , magnesia and silicon dioxide.2. The electrically conductive film as claimed in claim 1 , wherein mass percentages of said zinc oxide claim 1 , alumina claim 1 , magnesia and silicon dioxide are as follows: zinc oxide 70˜94% claim 1 , alumina 0.5˜3% claim 1 , silicon dioxide 0.5˜3% claim 1 , magnesia 5˜25%.3. The electrically conductive film as claimed in claim 2 , wherein mass percentages of said alumina claim 2 , silicon dioxide and magnesia are as follows: zinc oxide 75˜90% claim 2 , alumina 1˜2% claim 2 , silicon dioxide 1˜1.5% claim 2 , magnesia 10˜20%.4. The electrically conductive film as claimed in claim 3 , wherein having a transmittance in the range of 80%˜99% at wavelength between 500 nm and 700 nm.5. The electrically conductive film as claimed in claim 3 , wherein resistivity of said electrically conductive film is in the range of 5×10Ω·cm˜7.6×10Ω·cm.6. A method for preparing electrically conductive film claim 3 , comprising:mixing zinc oxide with magnesia, alumina and silicon dioxide, stirring to produce mixture;mass percentages of zinc oxide, alumina, ...

HARD FILM SLIDING PART AND METHOD OF MANUFACTURING THE SLIDING PART

Disclosed herein is a hard film containing boron and carbon, wherein the hard film includes a plurality of concave portions and a plurality of convex portions formed on a surface of the hard film, and wherein carbon concentration in the concave portion is higher than that in the convex portion and boron concentration in the convex portion is higher than that in the concave portion. Further, disclosed herein is a method of manufacturing a sliding part having a hard film containing boron and carbon disposed over a substrate; wherein the hard film is manufactured by using at least one of an unbalanced magnetron sputtering method or a high power pulsed magnetron sputtering method, both sputtering methods using a target containing at least one of elements of silicon, chromium, titanium, and tungsten and a boron carbide target. 1. A hard film containing boron and carbon ,wherein the hard film includes a plurality of concave portions and a plurality of convex portions formed on a surface of the hard film, andwherein carbon concentration in the concave portion is higher than that in the convex portion and boron concentration in the convex portion is higher than that in the concave portion.2. The hard film according to claim 1 , whereinthe concave portion forms a groove in the surface and a plurality of the grooves are arranged.3. The hard film according to claim 2 , whereina plurality of clusters are formed on the surface, a plurality of the grooves are formed in the cluster and the plurality of the grooves is different in orientation for each cluster.4. The hard film according to claim 2 , whereinthe width of each of the plurality of the grooves is less than 100 μm, and the step between the concave portion and the convex portion is less than 0.5 μm.5. The hard film according to claim 1 , whereinThe hard film further contains at least one of hydrogen and nitrogen, the hydrogen being 20 atomic % or less, the nitrogen being less than 1.1 times the boron concentration.6. The ...

Substrate processing system with mechanically floating target assembly

Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

PLASMA PROCESSING APPARATUS

A plasma processing apparatus includes a chamber () and a target () above the chamber (). The surface of the target () contacts the processing area of the chamber (). The chamber () includes an insulating sub-chamber () and a first conductive sub-chamber (), which are superposed. The first conductive sub-chamber () is provided under the insulating sub-chamber (). The insulating sub-chamber () is made of insulating material, and the first conductive sub-chamber () is made of metal material. A Faraday shield component () which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (). An inductance coil () surrounds the exterior of the insulating sub-chamber (). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus. 1. A plasma processing apparatus , including: a chamber and a target above the chamber , the target is located above the chamber so that the surface of the target contacts the processing area inside the chamber , characterized in that ,The chamber includes an insulating sub-chamber and a first conductive sub-chamber which are superposed, the first conductive sub-chamber is provided under the insulating sub-chamber, the insulating sub-chamber is made of insulating material, the first conductive sub-chamber is made of metal material;A Faraday shield component is provided inside the insulating sub-chamber, the Faraday shield component is made of metal material, or insulating material electroplated with conductive coatings, the Faraday shield component includes at least one slit; andThe insulating sub-chamber is externally surrounded by an induction coil.2. The plasma processing apparatus according to claim 1 , characterized in that claim 1 , the insulating sub-chamber is a hollow cylinder.3. The plasma processing apparatus according ...

Continuous plasma and rf bias to regulate damage in a substrate processing system

Systems and methods include supplying process gas to a processing chamber including a substrate. Plasma is created in the processing chamber. After performing a first substrate processing step, the plasma is maintained in the processing chamber and at least one operating parameter is adjusted. The operating parameters may include RF bias to a pedestal, a plasma voltage bias, a gas admixture, a gas flow, a gas pressure, an etch to deposition (E/D) ratio and/or combinations thereof. One or more additional substrate processing steps are performed without an interruption in the plasma between the first substrate processing step and the one or more additional substrate processing steps.

Production of Nanoparticles

A production method for nanoparticles is disclosed which allows excellent control of the production parameters and elevated production rates. It comprises a plurality of sputter targets arranged in a coplanar manner, a first gas supply located between the plurality of sputter targets, for emitting a stream of gas; and a plurality of magnetrons, one located behind each of the sputter targets. Each magnetron can have an independently controlled power supply, allowing close control. For example, the targets could be of different materials allowing variation of the alloying compositions. A plurality of further gas supplies can be provided, each further gas supply providing a supply of gas over a sputter target. The sputter targets can be arranged in a rotationally symmetric manner, ideally symmetrically around the first gas supply. It is particularly convenient for the sputter targets to be located at a surface of a support, within a recessed portion on that surface bounded by an upstand, as this allows the plurality of further gas supplies to be located on the upstand, each directed towards a sputter target. This then permits close control of the gas flow rate and direction over each sputter target. 1. An apparatus for producing nanoparticles , comprising:a plurality of sputter targets arranged in a coplanar manner;a first gas supply located between the plurality of sputter targets, for emitting a stream of gas; anda plurality of magnetrons, one located behind each of the sputter targets.2. An apparatus according to claim 1 , wherein each magnetron has an independently controlled power supply.3. An apparatus as claimed in further comprising a plurality of further gas supplies claim 1 , each further gas supply providing a supply of gas over a sputter target.4. An apparatus as claimed in in which the sputter targets are arranged in a rotationally symmetric manner.5. An apparatus as claimed in in which the sputter targets are arranged symmetrically around the first gas ...

HIGH DENSITY MICROWAVE PLASMA GENERATION APPARATUS, AND MAGNETRON SPUTTERING DEPOSITION SYSTEM USING THE SAME

A microwave plasma generation apparatus () includes: a rectangular waveguide () that transmits a microwave; a slot antenna () that has a slot () through Which the microwave passes; and a dielectric portion () that is arranged so as to cover the slot () and of which a plasma generating region-side front face is parallel to an incident direction in which the microwave enters from the slot (). The microwave plasma generation :apparatus () is able to generate microwave plasma (P) under a low pressure of lower than or equal to 1 Pa. A magnetron sputtering deposition system () includes the microwave plasma generation apparatus (), and carries out film deposition using magnetron plasma. (P) while radiating microwave plasma (P) between a base material () and a target (). With the magnetron sputtering deposition system (), it is possible to form a thin film having small asperities on its surface. 1. A microwave plasma generation apparatus that generates microwave plasma in a vacuum casing , characterized by comprising:a rectangular waveguide that transmits a microwave;a slot antenna that is arranged at one face of the rectangular waveguide and that has a slot through which the microwave passes; anda dielectric portion that is arranged so as to cover the slot of the slot antenna and of which a plasma generating region-side front face is parallel to an incident direction in which the microwave enters from the slot.2. The microwave plasma generation apparatus according to claim 1 , wherein the microwave plasma generation apparatus is able to generate the microwave plasma under a pressure of higher than or equal to 0.5 Pa and lower than or equal to 100 Pa.3. The microwave plasma generation apparatus according to claim 1 , further comprising:a support plate that is arranged on a back face of the dielectric portion and that supports the dielectric portion; anda permanent magnet that is arranged on a back face of the support plate and that forms a magnetic field in the plasma ...

MAGNETRON SOURCE, MAGNETRON SPUTTERING APPARATUS AND MAGNETRON SPUTTERING METHOD

Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided. 1. A magnetron source , characterized by comprising:a target material;a magnetron located above the target material; and a peach-shaped track, with the magnetron movably disposed thereon;', 'a first driving shaft, with the bottom end thereof connected with the origin of polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate around the axis of the first driving shaft;', 'a first driver connected to the first driving shaft, for driving the first driving shaft to rotate; and', 'a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly., 'a scanning mechanism connected to the magnetron for controlling the movement of magnetron above the target material, wherein the scanning mechanism comprises2. The magnetron source according to claim 1 , characterized in that claim 1 , the transmission assembly comprising:a first transmission gear connected with the second driver and is driven by the second driver;a hollow shaft and a second gear, the said hollow shaft is rotatably nested outside the first driving shaft, ...

SPUTTERING APPARATUS

The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit of change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part. 1. A sputtering apparatus , comprising:a magnet unit capable of forming a magnetic field on a surface of a target;a changing unit capable of driving the magnet unit to change a magnetic field pattern including a position and intensity of the magnetic field formed on the surface of the target;a discharge state measuring unit configured to measure a discharge stare value when discharge voltage is applied to a target electrode to which the target is attached;a memory unit configured to store a reference discharge state value acquired corresponding to each magnetic field pattern producible by the changing unit;a determination unit configured to determine a state of the surface of the target based on a comparison between the discharge state value measured by the discharge state measuring unit at a first magnetic field pattern and a discharge state reference value corresponding to the first magnetic field pattern stored in the memory unit; anda controller configured to select a second magnetic field pattern, which is different from the first magnetic field pattern, based on the result of determination by the determination unit, control the changing unit to ...

Radio frequency tuned substrate biased physical vapor deposition apparatus and method of operation

A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.

SYSTEMS AND METHODS FOR FORMING A LAYER OF SPUTTERED MATERIAL

The present disclosure describes a method of coating a substrate, the method including forming a layer of sputtered material on the substrate. Forming the layer of sputtered material may include: sputtering material from at least one rotatable target over the substrate; varying the relative position between the at least one target and the substrate. In addition, the present disclosure describes varying the distance between a target and a substrate during the sputter process. The present disclosure further describes a system for coating a substrate. 1. A method of coating a substrate , comprising: sputtering material from at least one rotatable target over said substrate; and', 'varying the relative position between said at least one rotatable target and said substrate to a first position (I), which first position is maintained for a predetermined first time interval; and', 'varying the relative position between said at least one rotatable target and said substrate to a second position (II), which second position is maintained for a predetermined second time interval,', 'wherein at least one of the predetermined first time interval and the predetermined second time interval is at least 1 second., 'forming a layer of sputtered material on said substrate, wherein forming said layer of sputtered material includes2. (canceled)3. The method of coating according to claim 1 , wherein the at least one rotatable target is an array of rotatable targets.4. The method of coating according to claim 1 , further comprising:providing a voltage to a cathode assembly associated to said rotatable target, wherein varying said relative position includes to vary said relative position from said first position to said second position, said voltage being higher when said relative position corresponds to said first or second position than when said relative position corresponds to a position between said first position and said second position.5. The method of coating according to claim 4 , ...

Liquid Crystal Display Device and Manufacturing Method Thereof

The present invention provides a liquid crystal display device, which includes: a plurality of pixel units. Each of the pixel units further includes: a liquid crystal layer; a pixel electrode and corresponding electrode, disposed on two opposite sides of liquid crystal layer; the corresponding electrode further including: first electrode pattern, disposed oppositely to pixel electrode; second electrode pattern, connected to the first electrode pattern, for applying an external voltage to the first electrode pattern so as to form an alignment electric field for liquid crystal layer between the first electrode pattern and pixel electrode. The present invention changes the way external voltage is applied, and introduce external voltage from one side of color filter substrate to improve success rate of liquid crystal alignment, reduce energy-consumption and reduce waste.

SPUTTERING APPARATUS

A sputtering apparatus is provided with an elongated target holder, a substrate holder having a substrate receiving surface, and a mask assembly having an opening configured between the target holder and the substrate holder. The mask assembly is comprised of a first and second masking part having facing edges that form the opening and are disposed parallel to the substrate receiving surface and independently movable in a direction perpendicular to the length of the target holder and parallel to the substrate receiving surface, or in a direction perpendicular to the substrate receiving surface. 1. A sputtering apparatus for forming a magnetic layer on a substrate , comprising:a vacuum enclosure;a first target holder, having a first elongated target with a short axis and a long axis;a first magnet unit provided adjacent to said first target holder;a substrate holder comprising a substrate receiving surface;a translating mechanism that moves the substrate holder or the first target holder along a direction substantially parallel to the substrate receiving surface and perpendicular to said elongated target long axis; anda mask assembly formed with an opening between the first target holder and the substrate holder, whereinsaid mask assembly comprises a first masking part and a second masking part which are disposed substantially parallel to the substrate receiving surface,said opening being formed between facing edges of the first masking part and the second masking part, andsaid first masking part and second masking part being independently movable in a direction substantially perpendicular to the long axis of the target and substantially parallel to the substrate receiving surface, or in a direction which is substantially perpendicular to the substrate receiving surface.2. The sputtering apparatus according to claim 1 , further comprising a second target holder having a second elongated target and an adjacent second magnet unit wherein claim 1 ,said first target ...

MAGNETIC-FIELD-GENERATING APPARATUS FOR MAGNETRON SPUTTERING

A racetrack-shaped magnetic-field-generating apparatus for magnetron sputtering comprising a linear portion and corner portions, the linear portion comprising a magnetic base, a center permanent magnet disposed on its surface, and side permanent magnets disposed on both sides thereof with a gap; the center and side permanent magnets being vertically magnetized with opposite polarities; the corner portions comprising a non-magnetic base, a center magnetic pole member disposed on its surface, a semicircular or semi-polygonal, peripheral magnetic pole member, and plural permanent magnets arranged between both magnetic pole members with their magnetization directions in parallel to a target surface; and the magnetic poles of plural permanent magnets opposing the center magnetic pole member having the same polarity as those of the center permanent magnet opposing the target. 1. A racetrack-shaped magnetic-field-generating apparatus for magnetron sputtering , which comprises a linear portion and corner portions to generate a magnetic field on a target surface ,said linear portion comprising a magnetic base, a center rectangular permanent magnet disposed on a surface of said magnetic base, and two side rectangular permanent magnets disposed on a surface of said magnetic base in parallel to and on both sides of said center permanent magnet with a gap;said center permanent magnet and said side permanent magnets being arranged with their magnetization directions perpendicular to said target surface and their polarities opposite;each of said corner portions comprising a non-magnetic base, a center magnetic pole member disposed on a surface of said non-magnetic base, a peripheral magnetic pole member disposed in a semicircular or semi-polygonal form with said center magnetic pole member as a center, and plural permanent magnets arranged between said center magnetic pole member and said peripheral magnetic pole member;said plural permanent magnets being arranged with their ...

MAGNETRON SPUTTERING COATING DEVICE, A NANO-MULTILAYER FILM, AND THE PREPARATION METHOD THEREOF

A magnetron sputtering coating device includes a deposition chamber, sputtering cathodes, a rotating stand within the deposition chamber, a support platform on the rotating stand, a first rotation system for driving the rotating stand to rotate around a central axis of the rotating stand, and a baffle fixed on the rotating stand. The sputtering cathodes are arranged around and perpendicular to the rotating stand. 1. A magnetron sputtering coating device , comprising:a deposition chamber;a rotating stand positioned within the deposition chamber and having a rotating axis;two first sputtering cathodes and a second sputtering cathode located on a circumference concentric with the rotating axis, wherein the second sputtering cathode contains a material different from the two first sputtering cathodes; anda baffle fixed on the rotating stand and divides the deposition chamber into at least two areas, wherein at least one first sputtering cathode is in one area, and the second sputtering cathode is in another area.2. The magnetron sputtering coating device according to claim 1 , wherein the first sputtering cathodes each include a graphite target claim 1 , and the second sputtering cathode includes a titanium or tantalum target.3. The magnetron sputtering coating device according to claim 1 , wherein the baffle extends along a diameter of the rotating stand.4. The magnetron sputtering coating device according to claim 1 , wherein the two first sputtering cathodes form an arc of substantially 180°-240° therebetween claim 1 , and the second sputtering cathode is positioned substantially in the middle of the two first sputtering cathodes.5. The magnetron sputtering coating device according to claim 1 , wherein the baffle is made of titanium claim 1 , aluminum claim 1 , stainless steel claim 1 , or a combination thereof.6. The magnetron sputtering coating device according to claim 1 , further comprising a support platform on the rotating stand for supporting an article to be ...

Prediction and compensation of erosion in a magnetron sputtering target

When a magnetron is scanned about the back of a target in a selected complex path having radial components, the erosion profile has a form depending upon the selection of paths. A radial erosion rate profile for a given magnetron is measured. Periodically during scanning, an erosion profile is calculated from the measured erosion rate profile, the time the magnetron spends at different radii, and the target power. The calculated erosion profile may be used to indicate when erosion has become excessive at any location prompting target replacement or to adjust the height of the magnetron above the target for repeated scans. In another aspect of the invention, the magnetron height is dynamically adjusted during a scan to compensate for erosion. The compensation may be based on the calculated erosion profile or on feedback control of the present value of the target voltage for a constant-power target supply. 1. A method of scanning a magnetron in back of a target in a plasma sputter chamber , comprising the steps of:applying power to the target to excite a plasma within the chamber and sputter from the target;scanning the magnetron about a central axis of the chamber along a selected path having radial and azimuthal components with respect to the central axis;calculating an erosion profile produced by the sputtering from operational parameters used during the scanning; andremoving the target from service when the calculated erosion profile indicates a predetermined limit of erosion of the target.2. The method of claim 1 , wherein the operation parameters include the power applied to the target and the selected path.3. The method of claim 2 , wherein the operation parameters include radial positions but not azimuthal positions of the selected path.4. The method of claim 1 , further comprising adjusting a vertical position of the magnetron along the central axis based upon the calculated erosion profile.5. The method of claim 1 , further comprising a calibration step of ...

MAGNETRON SPUTTERING DEVICE, METHOD FOR CONTROLLING MAGNETRON SPUTTERING DEVICE, AND FILM FORMING METHOD

A magnetron sputtering device includes alternating current power supplies each connected to a first target and a second target in a pair, and a controller configured to control a phase difference between voltages output from the alternating current power supplies connected to the first targets and the second targets in the pairs adjacent to each other. 113-. (canceled)14. A magnetron sputtering device comprising:a target section, where a substrate to be processed is arranged to face the target section;alternating current power supplies each configured to supply power to the target section; anda magnet section configured to move back and forth along the target section, whereina plurality of first targets and a plurality of second targets are alternately disposed in the target section to provide a plurality of pairs each including the first target and the second target adjacent to each other,each of the alternating current power supplies are connected to the first and the second target in the pair,a controller configured to control a phase difference between voltages output from the alternating current power supplies connected to the first targets and the second targets in the pairs adjacent to each other is provided,the controller controls a phase difference θ between voltages applied to the first target and the second target included in different ones of the pairs and adjacent to each other so that the phase difference θ lies within the range −90°≦θ≦90°, andone of the alternating current power supplies connected to the first targets and the second targets in the pairs adjacent to each other is configured to output voltages each having a frequency which is not an integer multiple of a frequency of voltages output from the other of the alternating current power supplies.15. The magnetron sputtering device of claim 14 , whereinthe controller is connected to the alternating current power supplies.16. A method for controlling a magnetron sputtering device includinga ...

SPUTTERING PROCESS

In a process for coating a substrate, the substrate is arranged opposite a removal surface of a target and the coating material is atomized by sputtering under an inert or reactive-gas-containing process gas and deposited on the substrate. The coating takes place from a mixed target with at least one target component A and a target component B. At the beginning of the sputtering process, the distribution of the target components A and B in a superficial target layer of the removal surface is modified by high-power impulse magnetron sputtering. 1. Process for coating a substrate , comprising: arranging a substrate to be coated opposite a removal surface of a target , atomizing coating material of the removal surface by sputtering under an inert or reactive-gas-containing process gas and depositing the coating material on the substrate , employing as a coating material source a mixed target with at least one target component A and a target component B and , at a beginning of the sputtering , modifying distribution of the target components A and B in a superficial target layer of the removal surface by high-power impulse magnetron sputtering.2. Process for coating a substrate according to claim 1 , wherein after modification of the distribution of the target components in the target layer of the mixed target claim 1 , the coating process is continued by DC or MF sputtering.3. Process for coating a substrate according to claim 2 , further comprising: modifying the distribution of the target components in the target layer of the mixed target at least one more time in the course of the coating process.4. Process for coating a substrate according to claim 1 , wherein after modification of the distribution of the target components in the target layer of the mixed target claim 1 , the coating process is continued by high-power impulse magnetron sputtering.5. Process for coating a substrate according to claim 1 , wherein target component A comprises a material of the layer to ...

Magnetron sputtering system

A magnetron sputtering system is disclosed in the present invention. A chamber includes a target holder, a substrate holder and a magnetic-field generating component. The magnetic-field generating component is configured to generate a magnetic field in a surrounding area of a substrate to be sputtered and deposited. The present invention can avoid the charged molecules and the cathode ions generated by the target hitting the to-be-sputtered/deposited substrate with higher energy. Therefore, it can avoid the damage of the to-be-sputtered/deposited substrate and decrease the stress of depositing the thin film on the substrate, as so to increase the yield of the products.

METHOD FOR MANUFACTURING A DECORATED GLASS SHEET

The invention relates to a method for manufacturing a decorated glass sheet covered with a functional coating, including the sequential steps of applying at least one decorative pattern onto at least a portion of a surface of the glass sheet by printing, drying the printed decorative pattern, and depositing the functional coating such that it at least partially covers said decorative pattern, by magnetron cathode sputtering. The invention further relates to the use of the resulting covered decorated glass sheet as a facing element. 2. The method according to claim 1 , a further comprising:cutting the decorated glass sheet, directly or indirectly, after the depositing.3. The method according to claim 1 ,wherein the decorated glass sheet has a PLF or DLF format.4. The method according to claim 1 , of further comprising: thermally treating the decorated glass sheet claim 1 , directly or indirectly claim 1 , after the depositing claim 1 ,wherein the thermally treating is firing an enamel-based print composition of the decorative pattern.5. The method according to claim 1 ,wherein the printing is at least one printing method selected from the group consisting of a screen printing, a laser printing, and an ink jet printing.6. The method according to claim 1 ,wherein the functional coating is a low-emissivity functional coating, solar shield functional coating, protective functional coating, electrically conductive functional coating, or a combination thereof based on at least one doped oxide.7. The method according to claim 6 ,wherein the functional coating is a protective functional coating comprising:i) at least one oxide or at least one mixed oxide of an element selected from the group consisting of titanium, zirconium, vanadium, niobium, tantalum, aluminium, zinc, silicon, tin, bismuth, and indium,ii) at least one nitride or at least one mixed oxide of an element selected from the group consisting of titanium, zirconium, aluminium, and silicon, orboth i) and ii).8. ...

Misaligned sputtering systems for the deposition of complex oxide thin films

Thin film sputtering apparatus and methods for depositing thin films using the apparatus are provided. The sputtering apparatus comprise a sputtering chamber that houses a deposition substrate and a sputtering source configured to deposit a thin film of material onto the deposition substrate. The deposition substrate has a deposition surface with a central axis running parallel with the deposition surface normal. The magnetron sputtering source comprises two or more sputtering targets, each sputtering target having a sputtering surface with a central axis running parallel with the sputtering surface normal. The sputtering surfaces are disposed opposite the deposition surface, such that the sputtering surfaces face the deposition surface in a parallel or substantially parallel arrangement, and the central axes of the sputtering surfaces run parallel with, but are transversely offset with respect to, the central axis of the deposition surface.

MAGNETRON ELECTRODE FOR PLASMA PROCESSING

The invention aims to provide a magnetron electrode for plasma treatment that is free of significant abnormal electrical discharge and able to perform electrical discharge with long-term stability. A second electrode is provided only at a position outside the inner side surface of the outer magnetic pole of a first electrode or at a position where the magnetic flux density is low. 1. A magnetron electrode for plasma treatment comprising at least a first electrode having an electrical discharging surface , a magnet to form a magnetic circuit for magnetron on the electrical discharging surface of the first electrode , and a second electrode electrically insulated from the first electrode so as to allow an electric potential to be maintained between the first electrode and the second electrode , wherein the second electrode is disposed so as to hang over the electrical discharging surface of the first electrode with a gap between them extending from the first electrode in the direction perpendicular to its electrical discharging surface , and wherein an inner edge of the second electrode is located outside an inner side surface of an outer magnetic pole of the magnetic circuit and simultaneously inside an outer side surface of the first electrode.2. A magnetron electrode for plasma treatment of claim 1 , wherein the second electrode is disposed at such a position that at the surface of the second electrode opposite to the first electrode claim 1 , the magnetic flux density in the perpendicular direction to the second electrode is 20 millitesla or less.3. A magnetron electrode for plasma treatment comprising at least a first electrode having an electrical discharging surface claim 1 , a magnet to form a magnetic circuit for magnetron on the electrical discharging surface of the first electrode claim 1 , and a second electrode electrically insulated from the first electrode so as to allow an electric potential to be maintained between the first electrode and the second ...

ENERGY-SHIELDING PLASTICS FILM

A plastics film with improved energy-shielding properties, suitable for application on a transparent or translucent surface, such as glass, and which is at least 50% transparent for visible light, further characterized in that it includes at least one plastic carrier layer with on top thereof as a functional layer a metallic layer consisting of antimony and/or arsenic together with indium and/or gallium, wherein the plastics film contains a total of indium (In), gallium (Ga), antimony (Sb) and arsenic (As) together, which are present as an alloy, such as indium andmonide, gallium andmonide, indium arsenide, indium gallium arsenide and/or gallium arsenide, of at least 4.0 ppm by weight and at most 25.0 ppm by weight. A glass plate to which the film is attached, is described as are objects provided with the glass plate. Methods are described for the production of the film, the glass plate and the objects. 128-. (canceled)29. Energy-shielding plastics film , suitable for application on a surface selected from a transparent and a translucent surface , such as glass , and which is at least for 50% transparent for visible light , meaning the wavelength range ranging from 380 to 780 nm and measured according to the standard NBN EN 410 , characterized in that the film comprises at least one plastic carrier layer with , on top thereof , a metallic layer comprising nickel and further comprising at least one element selected from antimony and arsenic together with at least one element selected from indium and gallium , the metallic layer being applied by sputter deposition , wherein the plastics film contains at least 10 ppm and at most 50 ppm by weight of nickel and further contains a total of indium (In) , gallium (Ga) , antimony (Sb) and arsenic (As) together , which are present as an alloy , such as indium antimonide , gallium antimonide , indium arsenide , indium gallium arsenide and/or gallium arsenide , of at least 4.0 ppm by weight and at most 25.0 ppm by weight , ...

Compliant implantable medical devices and methods of making same

Implantable medical grafts fabricated of metallic or pseudometallic films of biocompatible materials having a plurality of microperforations passing through the film in a pattern that imparts fabric-like qualities to the graft or permits the geometric deformation of the graft. The implantable graft is preferably fabricated by vacuum deposition of metallic and/or pseudometallic materials into either single or multi-layered structures with the plurality of microperforations either being formed during deposition or after deposition by selective removal of sections of the deposited film. The implantable medical grafts are suitable for use as endoluminal or surgical grafts and may be used as vascular grafts, stent-grafts, skin grafts, shunts, bone grafts, surgical patches, non-vascular conduits, valvular leaflets, filters, occlusion membranes, artificial sphincters, tendons and ligaments.

SYNTHESIS OF ADVANCED SCINTILLATORS VIA VAPOR DEPOSITION TECHNIQUES

Transparent optical ceramic coating materials have been fabricated from europium-doped lutetium oxide (LuO:Eu) using physical vapor deposition and chemical vapor deposition techniques. The non-pixilated film coatings have columnar microcrystalline structure and excellent properties for use as radiological scintillators, namely very high density, high effective atomic number, and light output and emission wavelength suitable for use with silicon-based detectors having a very high quantum efficiency. The materials can be used in a multitude of high speed and high resolution imaging applications, including x-ray imaging in medicine. 1. A method of preparing a radiological scintillator coating material by vapor deposition , the method comprising depositing a layer of LuOand EuOonto a substrate by vapor deposition , the layer having a preferentially oriented grain structure.2. The method of claim 1 , wherein the vapor deposition method comprises the steps of:{'sub': 2', '3', '2', '3, '(a) providing a target comprising a compressed powder consisting essentially of from about 85 to 95 mol % LuOand from about 5 to 15 mol % EuOand a substrate to be coated with the scintillator coating material; and'}{'sub': 2', '3', '2', '3, '(b) subjecting the target to physical vapor deposition to release material from the target and deposit the material as a scintillator coating comprising LuOand EuOonto the substrate.'}3. The method of claim 2 , wherein the vapor deposition comprises plasma sputtering in a radio frequency magnetron sputtering system.4. The method of claim 3 , wherein the plasma comprises argon.5. The method of claim 4 , wherein the plasma comprises less than 1% oxygen.6. The method of claim 3 , wherein the pressure of the sputtering system is from about 0.5 to 20 mTorr.7. The method of claim 3 , wherein the radio frequency power of the magnetron sputtering system is from about 16 to about 32 watts per square inch of target area.8. The method of claim 3 , wherein the ...

DEVICE FOR PRODUCING NANOPARTICLES AT HIGH EFFICIENCY, USE OF SAID DEVICE AND METHOD OF DEPOSITING NANOPARTICLES

The nanoparticle production device includes a target provided with a nanoparticle source surface, and a magnetron generating a first magnetic field, the target being mounted on the magnetron and the first magnetic field forming field lines at the level of the nanoparticle source surface. The device further includes balancing means of the first magnetic field at the level of the target, arranged to close fleeing field lines of the first magnetic field and to keep said lines closed at the level of said nanoparticle source surface, said balancing means being distinct from the magnetron. 110-. (canceled)12. The device according to claim 11 , wherein the balancing device comprises a plate provided with a ferromagnetic element claim 11 , said plate being arranged between the target and the magnetron.13. The device according to claim 12 , wherein the plate comprises at least one material chosen from Fe claim 12 , Co claim 12 , Ni claim 12 , Mn.14. The device according to claim 11 , wherein the balancing device comprises:a magnetic coil configured for generating a second magnetic field,a control system configured for controlling the magnetic coil so as to define a first state wherein fleeing field lines of the first magnetic field are closed, said closed lines being kept at the level of said nanoparticle source surface.15. The device according to claim 11 , wherein an absolute value of a difference between Band Bis less than 5*10Tesla.16. The device according to claim 14 , comprising a temperature measurement sensor arranged facing the source surface.17. Nanoparticle deposition device comprising a nanoparticle production device according to .18. Nanoparticle deposition device according to comprising:an enclosure in which the magnetron, the target and the balancing device are arranged, said enclosure comprising a sputtering gas inlet and an outlet opening of the nanoparticles,a first chamber into which the outlet opening of the enclosure opens,a second chamber provided with ...

Method for using sputtering target and method for manufacturing oxide film

A method for using a sputtering target which enables an oxide film with a high degree of crystallinity, which contains a plurality of metal elements, to be formed is provided. In the method for using a sputtering target including a polycrystalline oxide containing a plurality of crystal grains which include a cleavage plane, an ion is made to collide with the sputtering target to separate sputtered particles from the cleavage plane, and the sputtered particles are positively charged, so that the sputtered particles are deposited uniformly on a deposition surface while repelling each other.

THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD

A thin film forming apparatus includes a substrate holding portion and a target portion. The target portion has a plurality of targets arranged at predetermined intervals and parallel to a substrate held by the substrate holding portion. The substrate holding portion is configured to move the substrate parallel to the target portion. A shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate so as to face a gap between adjoining ones of the targets. 1. A thin film forming apparatus , comprising:a substrate holding portion configured to hold a substrate; anda target portion placed so as to face a substrate held by the substrate holding portion, whereinthe target portion has a plurality of targets arranged at predetermined intervals and parallel to the substrate held by the substrate holding portion,the substrate holding portion is configured to move the substrate held by the substrate holding portion, parallel to the target portion, anda shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate held by the substrate holding portion, so as to face a gap between adjoining ones of the targets.2. The thin film forming apparatus of claim 1 , whereinthe substrate holding portion is configured to reciprocate by a width corresponding to a region facing one of the targets and at least a part of the gap located on each of both right and left sides of this target.3. The thin film forming apparatus of claim 1 , further comprising:a partition wall portion provided between adjoining ones of the targets, and configured to block the sputtered particles flying from the targets, whereinthe partition wall portion has a flange portion that faces a portion on the gap side of a surface on the substrate holding portion side of the target.4. A method of forming a thin film on a substrate by a thin film forming apparatus which ...

MAGNETRON SPUTTERING APPARATUS

A magnetron sputtering apparatus for processing a substrate includes a target holding member for holding a target installed to face the substrate and a magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma is confined on a surface of the target by forming a magnetic field on the target surface by the magnet, on the target surface, a plasma loop is formed around a region on a loop where a vertical magnetic field component perpendicular to the target does not substantially exist while a horizontal magnetic field component parallel to the target mainly exists, and the horizontal magnetic field component at all position on the loop where the horizontal magnetic field mainly exists is in a range of about 500 Gauss to 1200 Gauss. 1. A magnetron sputtering apparatus for processing a substrate , the apparatus comprising:a target holding member for holding a target installed to face the substrate; anda magnet installed at a side opposite to the substrate across the target,wherein plasma is confined on a surface of the target by forming a magnetic field on the target surface by the magnet,on the target surface, a plasma loop is formed around a region on a loop where a vertical magnetic field component perpendicular to the target does not substantially exist while a horizontal magnetic field component parallel to the target mainly exists, andthe horizontal magnetic field component at all position on the loop where the horizontal magnetic field mainly exists is in a range of about 500 Gauss to 1200 Gauss.2. A magnetron sputtering apparatus for processing a substrate , the apparatus comprising:a target holding member for holding a target installed to face the substrate; anda magnet installed at a side opposite to the substrate across the target,wherein plasma is confined on a surface of the target by forming a magnetic field on the target surface by the magnet,on the target surface, a plasma loop is formed around a ...

THIN FILM DEPOSITION APPARATUS AND METHOD OF DEPOSITING THIN FILM USING THE SAME

A thin film deposition apparatus includes a process chamber that includes a reaction space, a plasma generating unit, and a sputtering unit. The plasma generating unit generates a plasma in the reaction space. The sputtering unit is independently driven from the plasma generating unit to form an electric field in the reaction space and to perform a sputtering process on a target using the plasma. 1. A thin film deposition apparatus comprising:a process chamber that includes a reaction space;a plasma generating unit that generates a plasma in the reaction space; anda sputtering unit to form an electric field in the reaction space and to perform a sputtering process on a target using the plasma, the sputtering unit independently driven from the plasma generating unit.2. The thin film deposition apparatus of claim 1 , wherein the plasma generating unit includes an electrodeless-type plasma generating unit.3. The thin film deposition apparatus of claim 1 , wherein the plasma generating unit generates the plasma using an induction field.4. The thin film deposition apparatus of claim 3 , wherein the plasma generating unit includes an electron cyclone resonance plasma generating unit.5. The thin film deposition apparatus of claim 4 , wherein the plasma generating unit comprises:a gas supply unit that provides a gas used to generate the plasma into the reaction space;an electromagnetic wave generating unit that generates an electromagnetic wave;a wave guide connected to the electromagnetic wave generating unit;at least one slot antenna formed on the wave guide, the at least one slot antenna being connected to the reaction space, the electromagnetic wave flowing through the at least one slot antenna; anda magnet disposed adjacent to the slot antenna to form a magnetic field in a path through which the electromagnetic wave flows.6. The thin film deposition apparatus of claim 5 , wherein the wave guide surrounds the process chamber.7. The thin film deposition apparatus of ...

Magnetron Sputtering Process

To control reactive magnetron sputtering process using a reactive gas or reactive gases the process overall pressure is regulated by means of the flow of the re-active gas or the reactive gases, respectively. Oscillations of the flow of the reactive gas or the reactive gases, respectively are determined and used as feedback to determine the process overall pressure. 1. A method of controlling a reactive magnetron sputtering process , wherein said magnetron sputtering process uses a reactive gas or reactive gases , characterized by regulating the process overall pressure by means of the flow of the reactive gas or the reactive gases , respectively , wherein oscillations of the flow of the reactive gas or the reactive gases , respectively are determined and used as feedback to determine the process overall pressure.2. The method according to claim 1 , characterized in that the regulation of the process overall pressure using the flow of the reactive gas or the reactive gases claim 1 , respectively claim 1 , is controlled by means of a PID regulator.4. The method according to claim 3 , characterized in that N is selected in the range of 8 to 12 claim 3 , preferably as 10 claim 3 , for an initial rough claim 3 , fast search.5. The method according to claim 3 , characterized in that N is selected in the range of 25 to 35 claim 3 , preferably as 30 claim 3 , for slow fine tuning.6. The method according to claim 1 , characterized in that the reactive gas used is selected of the group including nitrogen and oxygen and a mixture of nitrogen and oxygen.8. The method according to claim 4 , characterized in that N is selected in the range of 25 to 35 claim 4 , preferably as 30 claim 4 , for slow fine tuning.9. The method according to claim 2 , characterized in that the reactive gas used is selected of the group including nitrogen and oxygen and a mixture of nitrogen and oxygen.10. The method according to claim 3 , characterized in that the reactive gas used is selected of the ...

MAGNETRON DESIGN FOR EXTENDED TARGET LIFE IN RADIO FREQUENCY (RF) PLASMAS

Embodiments of magnetrons suitable to provide extended target life in radio frequency (RF) plasmas are provided. In some embodiments, apparatus and methods are provided to control film uniformity whilst extending the target life in an RF plasma. In some embodiments, the present invention may facilitate one or more of very high target utilization, more uniform metal ionization, and more uniform deposition on a substrate. In some embodiments, a magnetron may include a magnet support member having a center of rotation; and a plurality of magnetic tracks, each track comprising a pair of open loop magnetic poles parallel to and spaced apart from each other, wherein one track is disposed near the center of the magnet support member, and wherein a different track is disposed in a position corresponding to an outer edge of a target material to be deposited on a substrate when installed in the PVD process chamber. 1. A magnetron for use in a physical vapor deposition (PVD) process chamber:a magnet support member having a center of rotation; anda plurality of magnetic tracks, each track comprising a pair of open loop magnetic poles that are parallel to and spaced apart from each other, wherein one track is disposed near the center of the magnet support member and wherein a different track is disposed in a position corresponding to an outer edge of a target material to be deposited on a substrate when installed in the PVD process chamber.2. The magnetron of claim 1 , wherein the plurality of magnetic tracks consist of three magnetic tracks.3. The magnetron of claim 1 , wherein a length of each magnetic track is proportional to a radial position of the magnetic track on the magnet support member.4. The magnetron of claim 1 , wherein each pair of open loop magnetic poles in each magnetic track comprises a plurality of magnets.5. The magnetron of claim 4 , wherein each magnet in the plurality of magnets in a given open loop magnetic pole has a common polar orientation.6. The ...

Coating material for aluminum die casting mold and method of manufacturing the coating material

Disclosed is a coating material for an aluminum die casting mold and a method of manufacturing the coating material. The coating material includes a CrN bonding layer formed on a surface of a substrate, a TiAlN/CrN nano multi-layer disposed on a surface of the CrN bonding layer, and a TiAlN/CrSi(C)N nano multi-layer disposed on a surface of the TiAlN/CrSiCN nano multi-layer. The coating material for an aluminum die casting mold may maintain the physical properties of a mold under a high temperature environment due to the superior seizure resistance, heat resistance and high-temperature stability of the coating material, thereby extending the lifespan of the mold.

METHOD FOR MANUFACTURING THERMAL ABSORBER FOR SOLAR THERMAL COLLECTOR

A method () for manufacturing a thermal absorber for a solar thermal collector includes arranging () a substrate of the thermal absorber on a vacuum coating line and depositing () by way of a physical vapour deposition on the substrate that is arranged on the vacuum coating line layers configured to absorb light. 1100120160. A method () for manufacturing a thermal absorber for a solar thermal collector that comprises arranging () a complete substrate of the thermal absorber on a vacuum coating line and depositing () by means of a physical vapour deposition on the complete substrate that is arranged on the vacuum coating line layers configured to absorb light.2140. The method of claim 1 , which further comprises cleaning () the complete substrate before the layers are deposited on the complete substrate by plasma ion cleaning in an entrance chamber of the vacuum coating line.3. The method of claim 1 , which comprises depositing three layers in coating chambers of a chamber section of the vacuum coating line of which three layers a first layer on the complete substrate has a composition comprising titanium claim 1 , aluminium claim 1 , nitrogen claim 1 , and one of following elements: silicon claim 1 , yttrium claim 1 , cerium claim 1 , and chromium; a second layer on the first layer has a composition comprising titanium claim 1 , aluminium claim 1 , nitrogen claim 1 , oxygen and one of following elements: silicon claim 1 , yttrium claim 1 , cerium claim 1 , and chromium; and a third layer on the second layer has a composition that comprises titanium claim 1 , aluminium claim 1 , silicon claim 1 , nitrogen claim 1 , and oxygen.4130150180. The method of claim 1 , which further comprises conveying ( claim 1 , claim 1 , ) the complete substrate along the vacuum coating before the complete substrate enters into the chamber section claim 1 , after the cleaning of the complete substrate or one of the depositions of the layers has been provided inside the chamber section ...

FILM-FORMING APPARATUS

There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state. 1. A film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method , the film forming apparatus comprising:a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other;an exhaust unit for reducing a pressure inside the chamber;a magnetic field generating unit for generating a magnetic field in front of a sputtering surface of the target;a direct current power supply for applying a negative direct current voltage to the target;a gas introducing unit for introducing a sputtering gas into the chamber; anda unit for preventing entering of sputtered particles to the object until plasma generated between the target and the object reaches a stable state, wherein the unit is a magnetic field generating unit for forming a magnetic field between the object and the target so as to deflect a trajectory of the sputtered particles from the object.25-. (canceled)1. A film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method , the film forming apparatus comprising:a ...

DEPOSITION APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD

A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber. 18.-. (canceled)9. An electronic device manufacturing method using a deposition apparatus including:a processing chamber configured to perform deposition processing;an exhaust chamber connected to the processing chamber via an exhaust port;an exhaust device connected to the exhaust chamber and evacuates the processing chamber via the exhaust chamber;a substrate holder disposed in the processing chamber and supports a substrate;a deposition unit disposed in the processing chamber;a shutter configured to move to a shielding state in which the shutter shields the substrate holder and the deposition unit from each other, or a retracted state in which the shutter is retracted from between the substrate holder and the deposition unit;a driving unit configured to drive the shutter to set the shutter in the shielding state or the retracted state;a shutter storage unit connected to the processing chamber via an opening and stores the shutter in the retracted state into the exhaust chamber; anda shield member formed around the opening of the shutter storage unit and configured to cover the exhaust port of the exhaust chamber,the shield member having, at a position of a predetermined height between the opening of the shutter storage unit and the deposition unit, a first exhaust path which communicates with the exhaust port of the exhaust chamber, the method comprising:a first step of setting the shutter in the shielding state by the driving unit;a ...

Apparatus for cylindrical magnetron sputtering

A cathode target assembly for use in sputtering target material onto a substrate includes a generally cylindrical target and a magnetic array. The magnetic array is adapted to provide a plasma confinement region adjacent an outer surface of the target. End portions of the magnetic array are adapted to make the shape and strength of the confinement field at the turns of the racetrack closely match the shape and strength of the confinement field along the straight part of the racetrack so as to significantly reduce cross-corner effect.

SPUTTERING APPARATUS

One embodiment is directed to a magnetron assembly comprising a plurality of magnets, and a yoke configured to hold the plurality of magnets in at least four straight, parallel, independent linear arrays. The plurality of magnets is arranged in the yoke so as to form a pattern comprising an outer portion and an inner portion, wherein the outer portion substantially surrounds the perimeter of the inner portion. The end portions of the linear array comprise a pair of turnaround sections, wherein each turnaround section substantially spans respective ends of the pair of elongated sections of the outer portion. The magnets in each turnaround section are arranged to form at least two or more different curves in the magnetic field that are offset from each along the target rotation axis. 1. A magnetron assembly comprising:a plurality of magnets; anda yoke configured to hold the plurality of magnets in at least four straight, parallel, independent linear arrays;wherein the plurality of magnets is arranged in the yoke so as to form a pattern comprising an outer portion and an inner portion, wherein the outer portion substantially surrounds the perimeter of the inner portion;wherein the end portions of the linear array comprise a pair of turnaround sections, wherein each turnaround section substantially spans respective ends of the pair of elongated sections of the outer portion;wherein the magnets in each turnaround section are arranged to form at least two or more different curves in the magnetic field that are offset from each along the target rotation axis.2. The magnetron assembly of claim 1 , wherein the magnets in each turnaround section are arranged to form at least two or more different curves in the magnetic field that are offset from each along the target rotation axis so resulting target erosion components of each curve do not overlap each other as a target material rotates.3. The magnetron assembly of claim 1 , wherein the magnets are arranged in each turnaround ...

HIGH-POWER SPUTTERING SOURCE

The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cmare obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded. 1. Method for generating a plasma discharge with a discharge current density that is in at least some areas locally greater than 0.2 A/cm2 , with the steps of:providing a power supply unit with a predefined maximum outputproviding at least two magnetron sputtering sources with a predefined racetrack each and predefined thermal limit, wherein the racetrack is designed so small that when the maximum output of the power supply unit is applied on one each of the magnetron sputtering sources, the discharge current density is greater than 0.2 A/cm2;by means of the power supply unit, feeding a first output in a first of the at least two magnetron sputtering sources for a first time interval, wherein the first output is chosen sufficiently high so that a discharge current density greater than 0.2 A/cm2 is generated at least in one area locally and wherein the first time interval is chosen sufficiently small so that the predefined thermal limit of the first magnetron sputtering source is not exceeded;by means of the power supply unit, feeding a second output in a second of the magnetron sputtering sources for a second time interval, wherein the second output is chosen high enough so that so that a discharge current ...

High quality reflectance coatings

Low-emissivity coatings that are highly reflective to infrared-radiation. The coating includes three infrared-reflection film regions, which may each include silver.

SPUTTERING DEVICE

A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device. 1. A sputtering device , comprising:a sputtering target;a substrate supporter facing the sputtering target and upon which a substrate is disposed;an anode mask between the sputtering target and the substrate which is on the substrate supporter; anda gas distribution member between the anode mask and the sputtering target, and comprising a plurality of gas distribution tubes separated from each other,wherein each gas distribution tube comprises a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.2. The sputtering device of claim 1 , wherein:the plurality of discharge holes is parallel to a plane of the anode mask.3. The sputtering device of claim 2 , wherein:the plurality of gas distribution tubes comprise a plurality of rods separated from and parallel to each other.4. The sputtering device of claim 3 , wherein:the plurality of discharge holes faces the substrate.5. The sputtering device of claim 3 , wherein:the plurality of discharge holes faces the sputtering target.6. The sputtering device of claim 3 , wherein:the plurality of discharge holes comprises a first discharge hole facing the sputtering target and a second discharge hole facing the substrate.7. The sputtering device of claim 1 , wherein:the gas discharge member is connected with a mass inflow meter.8. The sputtering device of claim 1 , ...

Low Pressure Arc Plasma Immersion Coating Vapor Deposition and Ion Treatment

A coating system includes a vacuum chamber and a coating assembly. The coating assembly includes a vapor source, a substrate holder, a remote anode electrically coupled to the cathode target, and a cathode chamber assembly. The cathode chamber assembly includes a cathode target, an optional primary anode and a shield which isolates the cathode target from the vacuum chamber. The shield defines an opening for transmitting an electron emission current of a remote arc discharge from the cathode target to the remote anode that streams along the target face long dimension. A primary power supply is connected between the cathode target and the primary anode while a secondary power supply is connected between the cathode target and the remote anode. Characteristically, a linear remote anode dimension and a vapor source short dimension are parallel to a dimension in which an arc spot is steered along the cathode target. 1. A coating system comprising:a vacuum chamber; and a vapor source having a target face with a vapor source long dimension and a vapor face short dimension;', 'a substrate holder to hold substrates to be coated such that the substrates are positioned in front of the vapor source, the substrate holder having a linear holder dimension;', 'a remote anode electrically coupled to the cathode target, the remote anode having a linear remote anode dimension, the vapor source having a linear vapor source dimension;', 'a cathode chamber assembly including a cathode target, an optional primary anode and a shield which isolates the cathode target from the vacuum chamber, the cathode target having a linear cathode target long dimension and a linear cathode target short dimension, the shield defining at least one opening for transmitting an electron emission current of a remote arc discharge from the cathode target to the remote anode that streams along the target face long dimension;', 'a primary power supply connected between the cathode target and the primary anode; ...

Low Pressure Arc Plasma Immersion Coating Vapor Deposition And Ion Treatment

A vacuum coating and plasma treatment system includes a magnetron cathode with a long edge and a short edge. The magnetic pole of the magnetron results in an electromagnetic barrier. At least one remote arc discharge is generated separate from the magnetron cathode and in close proximity to the cathode so that it is confined within a volume adjacent to the magnetron target. The remote arc discharge extends parallel to the long edge of the magnetron target and is defined by the surface of the target on one side and the electromagnetic barrier on all other sides. There is a remote arc discharge cathode hood and anode hood extending over the arc discharge and across the short edge of the magnetron cathode. Outside of the plasma assembly is a magnetic system creating magnetic field lines which extend into and confine the plasma in front of the substrate. 1. A vacuum coating and plasma treatment system comprising: a magnetron cathode with a long edge, a short edge and a magnetic pole forming a sputtering racetrack within a magnetron target having a surface; the magnetic poles form an electromagnetic barrier;', 'an anode electrically connected to the magnetron cathode;', 'at least one remote arc discharge generated separate from the magnetron cathode and adjacent to the magnetron target, the remote arc discharge extending along a direction parallel to the long edge of the magnetron target wherein the remote arc discharge is confined within a remote arc volume adjacent to the magnetron target, the remote arc volume is defined by the surface of the target on one side and the electromagnetic barrier on all other sides;', 'a remote arc discharge cathode hood extending over the arc discharge and across the short edge of the magnetron cathode; and', 'a remote arc discharge anode hood;, 'a plasma assembly facing a substrate, the plasma assembly includinga magnetic system creating magnetic field lines which extends into and confines a plasma in front of the plasma assembly and a ...

Remote Arc Discharge Plasma Assisted Processes

A coating system includes a vacuum chamber and a coating assembly positioned within the vacuum chamber. The coating assembly includes a vapor source that provides material to be coated onto a substrate, a substrate holder to hold substrates to be coated such that the substrates are positioned in front of the vapor source, a cathode chamber assembly, and a remote anode. The cathode chamber assembly includes a cathode, an optional primary anode and a shield which isolates the cathode from the vacuum chamber. The shield defines openings for transmitting an electron emission current from the cathode into the vacuum chamber. The vapor source is positioned between the cathode and the remote anode while the remote anode is coupled to the cathode. 1. A coating system comprising:a vacuum chamber; and a vapor source;', 'a substrate holder to hold substrates to be coated such that the substrates are positioned in front of the vapor source;', 'a cathode chamber assembly including a cathode target, an optional primary anode and a shield which isolates the cathode target from the vacuum chamber, the shield defining openings for transmitting an electron emission current from the cathode target into the vacuum chamber;', 'a remote anode electrically coupled to the cathode target;', 'a primary power supply connected between the cathode target and the primary anode; and', 'a secondary power supply connected between the cathode target and the remote anode, the vapor source being positioned between the cathode chamber assembly and the remote anode, the remote anode having a linear remote anode dimension, the vapor source having a linear vapor source dimension, the cathode target having a linear cathode target dimension, and the substrate holder having a linear holder dimension such that the linear remote anode dimension, the linear vapor source dimension, the linear cathode target dimension, and the linear holder dimension are parallel to each other, with the linear remote anode ...

Racetrack-shaped magnetic-field-generating apparatus for magnetron sputtering

A racetrack-shaped magnetic-field-generating apparatus for magnetron sputtering having a linear portion and corner portions, which comprises a center magnetic pole member; a peripheral magnetic pole member surrounding the center magnetic pole member; pluralities of permanent magnets arranged between the center magnetic pole member and the peripheral magnetic pole member to have magnetic poles aligned in one direction; and a non-magnetic base member supporting them; permanent magnets arranged in at least the linear portion being inclined with their surfaces on the side of the center magnetic pole member lower, and with their outside magnetic pole surfaces not in contact with the peripheral magnetic pole member in lower portions; the distance between the center magnetic pole member and the target being the same as the distance between the peripheral magnetic pole member and the target, thereby generating a uniform magnetic field on a target surface.

FILM FORMING METHOD BY SPUTTERING APPARATUS AND SPUTTERING APPARATUS

The present invention provides a film forming method which can reduce deterioration of film thickness distribution even if the thickness of a film to be formed is extremely small while improving use efficiency of a target and a sputtering apparatus. A film forming method by a sputtering apparatus according to one embodiment of the present invention has a first step of fixing a magnet to a first position and performing film formation on a substrate on a substrate support surface, a second step of moving the magnet to a second position different from the first position after finishing the film formation on the substrate and then fixing it thereto, and a third step of performing film formation on the substrate on the substrate support surface by using the magnet fixed to the second position. 118-. (canceled)19. A film forming method using an apparatus including a cathode having a sputtering target support surface for holding a sputtering target , a stage having a substrate support surface for holding a substrate , and a magnet disposed in the cathode , the method comprising:a first step of generating a plasma by applying a power to the cathode and depositing a film on the substrate, while the magnet is kept still with respect to the sputtering target by being fixed at a first position in the cathode and the stage is moved in a first direction;a second step of moving the magnet in a plane parallel with the sputtering target support surface to a second position different from the first position, in a state where a power is not applied to the cathode; anda third step of generating a plasma by applying a power to the cathode and depositing a film on the substrate, while the magnet is kept still with respect to the sputtering target by being fixed at the second position in the cathode and the stage is moved in a second direction that is opposite to the first direction.20. The film forming method according to claim 19 , wherein the apparatus further includes a shield plate ...

SPUTTERING MAGNETRON AND METHOD FOR DYNAMICALLY INFLUENCING THE MAGNETIC FIELD

A sputtering magnetron for coating a substrate includes a target and a magnet system that can be displaced relative to one another. The magnet system forms a magnetic field that penetrates the target, and has a support apparatus, a support plate with magnets arranged thereon, and actuators. The support apparatus is connectable to the support plate by the actuators such that distance between the magnet system and the target can be set, at least in sections. A cooling circuit cools the magnet arrangement and the target by a coolant. A layer measuring device obtains data of layer properties of at least one layer deposited on the substrate. Magnet system controls evaluate the data obtained and generate manipulated variables employed as the input variables of the actuators. A method for dynamically influencing the magnetic field is also provided. 1. A sputtering magnetron for coating a substrate , comprisinga target and a magnet system, wherein the target and the magnet system can be displaced relative to one another and the magnet system forms a magnetic field that penetrates the target,wherein the magnet system has a support apparatus, a support plate with magnets arranged thereon, and actuators, and the support apparatus is connected to the support plate by the actuators such that distance between the magnet system and the target can be set, at least in sections,a cooling circuit for cooling the magnet system and the target by a coolant,layer measuring means for obtaining data of layer properties of at least one layer deposited on the substrate, andmagnet system controls for evaluating the data obtained and for generating manipulated variables, wherein the manipulated variables comprise input variables of the actuators.2. The sputtering magnetron as claimed in claim 1 , further comprising a contactless connection between the magnet system controls and the actuators for information interchange.3. The sputtering magnetron as claimed in claim 2 , wherein the actuators ...

COPPER-BASED ANTIMICROBIAL PVD COATINGS

A coated substrate includes a substrate, a zirconium-containing layer disposed over the substrate, and one or more copper alloy layers disposed over the substrate. Variations include coated substrate with a single copper alloy layer, alternating copper layers, or a combined copper alloy/zirconium-containing layer. 1. A coated substrate comprising:a substrate;a zirconium-containing base layer disposed over the substrate, the zirconium-containing base layer being a zirconium carbonitride base layer or a zirconium nitride base layer; andone or more copper alloy layers disposed over the zirconium carbonitride base layer.2. The coated substrate of wherein the zirconium-containing base layer includes zirconium in an amount of at least 50 mole percent claim 1 , carbon in an amount of at least 0.02 mole percent claim 1 , and nitrogen in an amount of at least 0.02 mole percent.5. The coated substrate of wherein the zirconium-containing base layer includes zirconium carbonitride having formula ZrCN.6. The coated substrate of wherein each copper alloy layer includes copper and nickel.7. The coated substrate of wherein nickel is present in an amount from about 10 to 25 weight percent of the total weight of each copper alloy layer with copper being present in an amount form about 75 to 90 weight percent of the total weight of each copper alloy layer.8. The coated substrate of wherein each copper alloy layer includes additional elements selected from the group consisting of iron claim 1 , zirconium claim 1 , tungsten claim 1 , chromium claim 1 , and combinations thereof.9. The coated substrate of wherein each of the additional elements are dependently present in an amount from about 0.01 to about 5 weight percent of the total weight of the copper alloy layer.10. The coated substrate of wherein a single copper alloy layer is disposed over the substrate.11. The coated substrate of wherein the zirconium-containing base layer has a thickness from about 100 to 800 nm and a single ...

HOMOGENEOUS HIPIMS COATING METHOD

The invention relates to a HiPIMS method by means of which homogeneous layers can be deposited over the height of a coating chamber. Two partial cathodes are used for said purpose. According to the invention, the length of the individual power pulse intervals applied to the partial cathodes is chosen individually and thus a required coating thickness profile over the height of the coating chamber is achieved. 1. Method for the physical vapor deposition by means of sputtering in an evacuated coating chamber , in particular by means of HiPIMS , comprising the steps of:a) providing a generator with a predefined power output, preferably a power output that is constant at least after switching on and after expiration of a power buildup interval,b) switching on the generator,c) connecting the first partial cathode to the generator so that the first partial cathode is fed with power from the generator,d) separating the generator from the first partial cathode after expiration of a predefined first power impulse interval corresponding to the first partial cathode,e) connecting the second partial cathode to the generator so that the second partial cathode is fed with power from the generator,f) separating the generator from the second partial cathode after expiration of a predefined second power impulse interval corresponding to the second partial cathode,characterized in that the length of the one power pulse interval is adapted in such a way to the length of the other power pulse interval that the layer resulting from the coating has a predefined layer thickness distribution over the height of the coating chamber.2. Method according to claim 1 , characterized in that a homogeneous layer thickness distribution is selected as prescribed layer thickness distribution.3. Method according to claim 1 , characterized in that the first power impulse interval starts time-wise before the second power impulse interval and the first power impulse interval ends time-wise before the ...

Razor blade coating

A razor blade that includes a substrate with a cutting edge, the substrate includes (a) a thin-film of a first material disposed thereon, the thin-film having a thickness less than 1 μm; (b) a mixed nitride-thin-film interregion disposed at or adjacent a surface of the thin-film and a surface of the substrate; and (c) a nitride region disposed adjacent the mixed nitride-thin-film interregion.

SUBSTRATE COATED WITH A LOW-E MULTILAYER

A material including a substrate coated on at least some of at least one of its faces with a thin-film multilayer including at least two films based on a transparent electrically conductive oxide, the films being separated by at least one dielectric intermediate film the physical thickness of which is at most 50 nm, no metal films being deposited between the films based on a transparent electrically conductive oxide, the multilayer furthermore including at least one oxygen barrier film above that film based on a transparent electrically conductive oxide which is furthest from the substrate, each film based on a transparent electrically conductive oxide possessing a physical thickness comprised in a range extending from 20 to 80 nm. 1. A material comprising a substrate coated on at least some of at least one of its faces with a thin-film multilayer comprising at least two films based on a transparent electrically conductive oxide , said at least two films being separated by at least one dielectric intermediate film , a physical thickness of which is at most 50 nm , no metal films being deposited between said at least two films based on a transparent electrically conductive oxide , said thin-film multilayer furthermore comprising at least one oxygen barrier film above a film of the at least two films based on a transparent electrically conductive oxide which is furthest from the substrate , each film of the at least two films based on a transparent electrically conductive oxide possessing a physical thickness comprised in a range extending from 20 to 80 nm.2. The material as claimed in claim 1 , wherein the substrate is made of glass.3. The material as claimed in claim 1 , wherein each transparent electrically conductive oxide is chosen from mixed indium tin oxide claim 1 , mixed indium zinc oxide claim 1 , gallium- or aluminum-doped zinc oxide claim 1 , niobium-doped titanium oxide claim 1 , zinc or cadmium stannate and antimony- and/or fluorine-doped tin oxide.4. ...