Способ газового алитирования

PROCEDURE FOR THE SEPARATION OF A FILM OF MEANS OF AN ALKYL ALUMINUM HYDRIDE

PROCEDURE FOR SUPPLYING A PROPORTIONED STEAM FLOW AS WELL AS PLANT FOR THE EXECUTION OF THE PROCEDURE.

PROCEDURE AND DEVICE FOR THE SEPARATION OF A LAYER.

Extended combustion resistant long-life titanium fire protective coating and preparation method thereof

The invention discloses an extended combustion resistant long-life titanium fire protective coating and a preparation method thereof, belonging to the technical field of titanium alloy surface protection. The titanium fire protective coating consists of a halogenated TiAlx alloy bottom layer and a dense a-A1203 ceramic surface layer, and the preparation method comprises the following steps of: preparing a halogenated TiAlx alloy layer; Pre-oxidation of halogenated TiAlx alloy layer; preparation of dense a-A1203 coating. The titanium fire protective coating provided by the invention obviously improves the ignition resistance and extended combustion resistance of titanium alloy, and improves the service temperature of titanium alloy; And the coating has excellent thermal shock resistance and long service life. 'Odiffusioninfilttionor (Dsurface pre-treatment magnetrnon sputtering titanium alloy Pre-treatedtitaniumalloy Ti alloylayer '3'Halogenation nreatment 'EB-PVD ignitioo ignition times ...

METHOD OF DEPOSITING THIN GROUP IIIA METAL FILMS

A method of depositing a Group IIIA metal layer of high purity on a substrate comprises pyrolyzing contacting the substrate with a tritertiary butyl compound of the Group IIIA metal and pyrolyzing the compound to leave the Group IIIA metal deposited on the substrate. The method of the invention may be used on any suitable substrate, such as silicon or polyimide. The method of the invention may be used for the growth of Group IIIA/silicon alloys as well as for depositing semi-conducting III-V alloys such as, for example, AlGaAs, AlInAs and AlSb.

Verfahren zur Herstellung von reinem Aluminium

Mit einem Lichtstabilisator versehener Kunststoff

Verfahren zum Aufbringen von Leichtmetallschichten auf die Oberflächen von Gegenständen aus beliebigem Material und Vorrichtung zur Durchführung dieses Verfahrens

Procédé d'enrobage d'un filament, notamment de carbone, et application de ce procédé

SURFACE PASSIVATION TECHNIQUES FOR CHAMBER-SPLIT PROCESSING

Surface passivation techniques for chamber- split processing are described. A method includes forming a first Group III-V material layer above a substrate, the first Group III-V material layer having a top surface. A passivation layer is deposited on the top surface of the Group III- V material layer. The passivation layer is removed. Subsequently, a second Group III-V material layer is formed above the first Group III- V material layer.

Thin film formation on semiconductor wafer

A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

Process for the production of a protective film on a magnesium-based substrate, application to the protection of magnesium alloys, substrates thus obtained

The invention relates to a process for producing a protective film on a magnesium-based metal substrate. This process consists in successively depositing using vapour-phase chemical deposition, at least one intermediate metal layer of aluminium and at least one surface layer of a metal oxide especially titanium oxide. In the case of the intermediate aluminium layer the chosen precursor is triisobutylaluminium, the substrate being heated to a temperature of between 250° and 320°C. In the case of titanium oxide surface layer the chosen precursor is tetraisopropyl orthotitanate, the substrate being heated to a temperature of between 360° and 400°C. The protective film in accordance with the invention exhibits a high surface hardness and adheres perfectly to the magnesium-based substrate; by virtue of its perfect electrochemical inertness it constitutes effective protection not only under static conditions but also under dynamic conditions.

Aluminiumverbindungen zur Herstellung von Aluminiumschichten durch chemische Gasphasen-Abscheidung und deren Herstellung

Verfahren zum Herstellen einer mit dem Grundmetall intermetallisch verbundenen Aluminium-Oberflaechenschicht auf Elektroden aus im wesentlichen Eisen oder Nickel fuer Elektronenroehren

Verfahren zum Anbringen einer Borschicht auf einem stählernen Substrat und Werkzeug mit einer Borschicht.

Thermoplastische Formmasse auf Grundlage von Polyoxymethylen mit endstaendigen AEther- oder Estergruppen

Lewis Addukte von Aluminium Organylen zur Erzeugung aluminiumhaltiger Schichten durch Gasphasenabscheidung

Organometallic complexes of aluminium, gallium and indium

Novel organometallic complexes of aluminium, gallium and indium are disclosed, having improved stability and volatility for use in CVD processes. These are donor ligand complexes of the formula RM.L2 where M is the metal, R is an alkyl group and L is a ligand containing an amidine (R'N---C(R')---NR') group, where R' is H, alkyl etc.

PROCEDURE FOR THE SEPARATION OF AN ALUMINUM AS MAIN PART ABSTENTION METALLIC FILM OF MEANS OF AN ALKYL ALUMINUM HYDRIDE.

MANUFACTURE PROCEDURE FOR AN ALUMINUM LAYER

METHOD OF PREPARING POROUS NICKEL-ALUMINUM STRUCTURES

This process provides a method of fabricating porous aluminide articles. First the process consists of plating a preform with nickel and aluminum to create a metal-plated structure. The plating of nickel consists of electrodeposition or gaseous plating. The plating of aluminum consists of gaseous deposition of an organometallic-aluminum compound. The preform has either an open felt, woven fabric or a reticulated foam shape. Reactive sintering the metal-plated structure leaves an open nickel-aluminum structure having porosity and excellent strength and oxidation properties above 400°C.

METHOD FOR TREATING SURFACE OF REACTION CHAMBER

PURPOSE: A method for treating a surface of a reaction chamber is provided to lengthen a cleaning period of the reaction chamber and increase an operation ratio by restricting the deposition of the second aluminum layer. CONSTITUTION: A substrate including a conductive material is loaded into a reaction chamber(S100). An aluminum precursor is provided to the reaction chamber and the first aluminum layer is formed on the substrate(S200). The substrate including the first aluminum layer is unloaded from the reaction chamber(S300). The loading process, the deposition process for forming the aluminum layer, and the unloading process are performed repeatedly(S400). The reaction material including oxygen and nitrogen is provided to the reaction chamber and the loading process, the deposition process, and the unloading process are performed repeatedly(S500). © KIPO 2004 ...

Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride

Area selective nanoscale-thin layer deposition via precise functional group lithography

A method of depositing a nanoscale-thin film onto a substrate is disclosed. The method generally comprises depositing a layer of a solid or gaseous state functionalizing molecule onto or adjacent to the first surface of the substrate and exposing the first surface to a source of ionizing radiation, thereby functionalizing the first surface of the substrate. Once the layer of functionalizing molecule is removed, a nanoscale-thin film is then deposited onto the functionalized first surface of the substrate.

Method for forming a metal contact

Chemical vapor deposition method and apparatus making use of liquid starting material

A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled. ...

Verfahren zur Fertigung eines Aluminiumleitkontakts unter Verwendung einer selektiven chemischen Dampfabscheidung

Enhancing catalytic activity of nanoprous materials

Method of fabricating an aluminum plug using selective chemical vapour deposition

Electroactive materials for metal-ion batteries

An electroactive particulate material consists of a plurality of composite particles. The composite particles comprise a conductive porous particle framework, wherein the total pore volume of pores having pore diameter in the range from 3.5 to 100 nm is in the range from 0.6 to 2.4 cm3 per gram of the porous particle framework, as determined by nitrogen gas adsorption. The internal pore surfaces of the porous particle framework are at least partially occupied by a multilayer coating. The multilayer coating comprises at least a first electroactive material layer, a second electroactive material layer, and a first interlayer material disposed between the first and second electroactive material layers. The porous particle framework preferably comprises a conductive carbon material. The first and second electroactive material layers may independently comprise elemental silicon, tin, germanium or aluminium, or mixtures or alloys thereof. Preferably, both layers comprise Si. The first interlayer ...

PROCEDURE FOR COATING WITH THIN LAYERS OF METAL OF GROUP OF [...] A-METALS

GAS SUPPLY DEVICE AND YOUR USE FOR A FILM SEPARATION PLANT

Nanomatrix powder metal composite

A powder metal composite is disclosed. The powder metal composite includes a substantially-continuous, cellular nanomatrix comprising a nanomatrix material. The compact also includes a plurality of dispersed particles comprising a particle core material that comprises Mg, Al, Zn or Mn, or a combination thereof, dispersed in the nanomatrix, the core material of the dispersed particles comprising a plurality a plurality of distributed carbon nanoparticles, and a bond layer extending throughout the nanomatrix between the dispersed particles. The nanomatrix powder metal composites are uniquely lightweight, high-strength materials that also provide uniquely selectable and controllable corrosion properties, including very rapid corrosion rates, useful for making a wide variety of degradable or disposable articles, including various downhole tools and components.

PROCESS FOR THE PREPARATION OF A COATED SUBSTRATE, COATED SUBSTRATE, AND USE THEREOF

The invention relates to a process for preparing a substrate with a multizone metallic coating comprising the steps of heating a metallic material optionally comprising a metallic outer layer having a different composition than said metallic material, to a temperature T1, depositing a coating of aluminium, magnesium, and/or zinc, and cooling down to a temperature T2 and continuing the deposition. It furthermore relates to a substrate with a multizone metallic coating obtainable with said process.

METALLIZATION OF SUBSTRATE(S) BY A LIQUID/VAPOR DEPOSITION PROCESS

A process for depositing a substantially pure, conformal metal layer on one or more substrates through the decomposition of a metal-containing precursor. During this deposition process, the substrate(s) is maintained at a temperature greater than the decomposition temperature of the precursor while the surrounding atmosphere is maintained at a temperature lower than the decomposition temperature of the precursor. The precursor is dispersed within a transport medium, e.g., a vapor phase. The concentration of the metal- containing precursor(s) in the vapor phase, which also contains liquid therein, can be at a level to provide conditions at or near saturation for the metal precursor(s). In ensuring the aforementioned temperature control between the transport media and substrate, and in maintaining saturation conditions for the transport media, the quality of the deposited metal thin film is markedly improved and the production of by-product metal dust is greatly reduced or substantially eliminated ...

METHOD OF PREPARING POROUS NICKEL-ALUMINUM STRUCTURES

This process provides a method of fabricating porous aluminide articles. First t he process consists of plating a preform with nickel and aluminum to create a metal -plated structure. The plating of nickel consists of electrodeposition or gaseous platin g. The plating of aluminum consists of gaseous deposition of an organometallic-aluminum compound. The preform has either an open felt, woven fabric or a reticulated foam shape. React ive sintering the metal-plated structure leaves an open nickel-aluminum structure having porosity and excellent strength and oxidation properties above 400.degree.C.

MANUFACTORING PROCESS Of an ALUMINIUM STOPPER BY CHEMICAL PLATING IN VAPOUR PHASE SELECTIVE

On forme initialement un composant à semi-conducteurs dans un substrat (20) ayant une couche isolante (24) formée sur sa surface. Une ouverture de prise de contact (26) formée dans la couche isolante met à nu une région conductrice (22) du composant. On applique ensuite au substrat un traitement de recuit thermique rapide. On utilise du diméthyléthylaminealane (DMEAA) à titre de précurseur pour déposer ensuite sélectivement un bouchon d'aluminium (28) dans l'ouverture de prise de contact, en utilisant une procédure de dépôt chimique en phase vapeur à une température de substrat ne dépassant pas 250 deg.C. A semiconductor component is initially formed in a substrate (20) having an insulating layer (24) formed on its surface. A contact opening (26) formed in the insulating layer exposes a conductive region (22) of the component. A rapid thermal annealing treatment is then applied to the substrate. Dimethylethylaminealan (DMEAA) is used as a precursor to then selectively deposit an aluminum plug (28) into the contact opening, using a chemical vapor deposition procedure at a substrate temperature not exceeding 250 deg.C.

REFLECTIVE AND RESISTANT COATINGS AND METHODS FOR APPLYING TO COMPOSITE STRUCTURES

REFLECTIVE AND RESISTANT COATINGS AND METHODS FOR APPLYING TO COMPOSITE STRUCTURES Coated composite articles and methods of applying the coatings are provided. The composite articles are preferably polymeric composites capable of withstanding temperatures of at least 600 degrees Fahrenheit prior to coating. The coating can be selected to impart resistance to higher temperatures as a result of the reflective properties of the coating. Additionally, the coating may be selected to provide desired electrical properties when an electrical current is applied. For example, electrically resistant coatings can impart deicing properties to the component, and may be particularly useful in aircraft components. The coatings can thus be selected to impart one or more useful properties to the composite component. (Fig. 2) ...

Methods, complexes, and systems for forming metal-containing films

A method of forming a film on a substrate using, Group III metal complexes, including Group IIIA metals and Group IIIB metals, which include the lanthanides. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

PROCESS FOR THE PREPARATION OF A COATED SUBSTRATE, COATED SUBSTRATE, AND USE THEREOF

Method for cleaning substrate and depositing protective coating

A method is disclosed to deposit aluminum coatings on high temperature superalloys for corrosion, oxidation, and erosion protection using low temperature chemical vapor deposition and an organometallic halide precursor, specifically an aluminum alkyl halide. The process is adapted to protective coatings for turbine parts having internal passages. Due to the lower temperatures used during chemical vapor deposition, a broad range of substrate materials can be utilized. The precursor vapors clean the substrate surfaces by removing native oxides while simultaneously depositing aluminum.

METHOD FOR FORMING WIRING ALUMINUM FILM

PROBLEM TO BE SOLVED: To completely bury an aluminum film in the contact hole and the through hole of a high aspect ratio, which are formed on an interlayer insulating film without a void. SOLUTION: A core forming layer 14 having a core forming operation on the gas phase chemical growth of aluminum is formed on the surface of an insulating film 12 containing the inner part of a contact hole 13. Then, an aluminum film 15 having film thickness thinner than the minimum radius in the radii of the contact hole 13 is formed on the surface of the insulating film 12, containing the inner wall of the contact hole 13 with gas phase chemical growth. Then, heat treatment is executed before the surface of the aluminum film 15 is coated with a natural oxide film and aluminum is re-flowed. Thus, the aluminum film 15 is completely buried in the contact hole 13. COPYRIGHT: (C)1999,JPO ...

МЕТАЛЛИЗАЦИЯ ОСНОВЫ (ОСНОВ) СПОСОБОМ ОСАЖДЕНИЯ ИЗПАРОЖИДКОСТНОЙ ФАЗЫ

... 1. Способ регулирования металлизации путем процесса осаждения, включающий транспортировку металлсодержащего предшественника в транспортной среде через камеру к основе, причем температура в транспортном объеме меньше температуры разложения металлсодержащего предшественника; осаждение металлического слоя на основу путем разложения основы металлсодержащего предшественника, причем температура у основы больше температуры разложения металлсодержащего предшественника; причем температуру основы и температуру металлсодержащего предшественника в транспортном объеме измеряют напрямую; и скорость осаждения и качество указанного металлического слоя на указанной основе регулируются путем регулирования указанной температуры основы, температуры металлсодержащего предшественника в транспортном объеме и путем сохранения условий насыщения для указанного предшественника в указанном транспортном объеме. 2. Способ по п.1, включающий, кроме того, измерение количества реакционного газа; недопущение входа металлсодержащего ...

Verfahren zur Beschichtung von Aluminiden, die leicht oxidierbare Metalle enthalten

Verfahren zur Abscheidung von einem Film mittels eines Alkylaluminiumhydrids

PROVIDING CONDUCTIVE TRACKS ON SEMICONDUCTOR DEVICES

Metallizing semiconductor devices

A process for metallizing semiconductor wafers with a silicon/aluminium alloy. The wafers mounted on a carrier are placed in a vacuum chamber and surface activated with titanium tetrachloride vapour. The batch of wafers is then exposed at elevated temperatures simultaneously or sequentially to an aluminium alkyl vapour and to silane. The deposition temperature or temperatures is/are adjusted to provide the desired degree of alloying.

Apparatus and method for gas plating with aluminium

... 882,214. Coating with aluminium. UNION CARBIDE CORPORATION. June 16, 1958, No. 19257/58. Class 82(2). A substrate is coated with aluminium by first cleaning it to remove foreign matter and moisture from the surface and then contacting it in a non-oxidising atmosphere free of water vapour with the vapour of an organo-aluminium compound while it is at a temperature such as to cause thermal decomposition of the compound. Surfaces of iron, steel, copper, magnesium, glass, synthetic resin, wood and paper may be coated by the decomposition of isobutyl-, triisobutyl-, tripropyl-, trimethyl- and triethyl-aluminium, dimethylaluminium chloride, diethylaluminium chloride, diethylaluminium hydride, diethylaluminium bromide, dipropylaluminium chloride, dibromoaluminium hydride and chloroaluminium dihydride. As shown, articles 26 to be coated are suspended in tube 21 and heated by oven 22. A solution of aluminium compound in heptane is injected from cylinder 18 through hypodermic needle 17 into heated ...

METALLIZATION OF SUBSTRATE (EN) BY A LIQUID - A STEAM SEPARATION PROCEDURE

PROCEDURE FOR THE PRODUCTION OF A PROTECTIVE FILM ON A SUBSTRATE ON MAGNESIUM BASIS, APPLICATION FOR THE PROTECTION SUBSTRATES RECEIVED FROM MAGNESIUM ALLOYS, THEREBY.

METALLIZATION OF SUBSTRATE (S) BY A LIQUID/VAPOR DEPOSITION PROCESS

A process for depositing a substantially pure, conformal metal layer on one or more substrates through the decomposition of a metal-containing precursor. During this deposition process, the substrate(s) is maintained at a temperature greater than the decomposition temperature of the precursor while the surrounding atmosphere is maintained at a temperature lower than the decomposition temperature of the precursor. The precursor is dispersed within a transport medium, e.g., a vapor phase. The concentration of the metal- containing precursor(s) in the vapor phase, which also contains liquid therein, can be at a level to provide conditions at or near saturation for the metal precursor(s). In ensuring the aforementioned temperature control between the transport media and substrate, and in maintaining saturation conditions for the transport media, the quality of the deposited metal thin film is markedly improved and the production of by-product metal dust is greatly reduced or substantially eliminated ...

METAL PROCESS OF COATING BY DEPOSIT IN THE FORM OF VAPORS, FOR THE FORMATION OF CONDUCTING WAYS ON A SEMICONDUCTOR BODY

PROCESS AND METAL DEVICE OF COATING BY DEPOSIT IN THE FORM OF VAPORS

Deposit of aluminium starting from a gas compound, in particular of the aluminium triisobutyl

Process for the aluminium deposit on a support

PROCEDE DE REVETEMENT METALLIQUE PAR DEPOT SOUS FORME DE VAPEURS, POUR LA FORMATION DE TRAJETS CONDUCTEURS SUR UN CORPS SEMI-CONDUCTEUR

Procédé de dépôt d'aluminium à partir de composés volatils d'aluminium pour la formation de trajets conducteurs sur des dispositifs à semi-conducteurs. La présente invention prévoit un procédé qui comprend l'activation de la surface du corps à revêtir dans une décharge d'hydrogène, le dépôt d'aluminium sur la surface activée par décomposition thermique de triisobutylaluminium fourni sous forme de vapeurs dans une chambre de réaction maintenue à une température comprise entre 250 et 270 degrés C, et une attaque sélective de l'aluminium de façon à définir les trajets conducteurs, le triisobutylaluminium étant maintenu avant son entrée dans la chambre de réaction à une température inférieure à 90 degrés C. Application à la formation de trajets conducteurs sur des dispositifs à semi-conducteurs.

Method for producing metal-containing film

Method for producing oxide crystal thin film

Provided is a method for producing a thin film, whereby it becomes possible to achieve both the reduction in concentration of carbon impurities and a high film formation speed and it also becomes possible to produce different crystal structures in accordance with the intended use steadily. According to the present invention, a method for producing an oxide crystal thin film is provided, which comprises a step of supplying raw material microparticles into a film formation chamber by the action of a carrier gas to form an oxide crystal thin film on a film formation sample placed in the film formation chamber, wherein the raw material microparticles are produced by transforming a raw material solution, which is a solution comprising a gallium compound and/or an indium compound and water, into microparticles, and wherein the gallium compound and/or the indium compound is a bromide or an iodide.

The compound for the aluminum film from chemical vapor deposition and the method of synthesis

Organometallic precursor compounds useful for forming aluminum films by chemical vapor deposition are disclosed. Also disclosed are methods of preparing the organometallic precursor compounds and methods of forming aluminum films. An organometallic compound of the formula H(R')2Al: Ln (I), wherein R' is an alkyl or perfluoroalkyl group having 1 to 4 carbons; and L is one or more Lewis bases capable of providing an unshared electron pair to the aluminum and is selected from thiophene, thiopyran or an organic amine of formula II or III, wherein R is an alkyl having a carbon number of 1 to 4; R1, R2, R21, R22, R23 and R24 are each independently hydrogen or an alkyl group having carbon numbers of 1 to 2; X is oxygen or an alkyl group containing nitrogen; m is an integer from 2 to 8; k and l are each independently integers from 1 to 3; and n is 1 or 2.

PROCESS FOR DEPOSITING METAL ON ONE OR MORE SUBSTRATES, COATED SUBSTRATE, AND USE THEREOF

The invention relates to a MOCVD process for coating of one or more substrates with a metal such that the coating is essentially free of surface defects, wherein the substrates are supported in a CVD apparatus and brought into contact with metal-organic compound-containing chemical vapour which decomposes to form the metal coating on the substrate essentially free of surface defects. The process comprises two or more coating steps wherein the substrate(s) is/are essentially not in motion in relation to one another and/or the support,and one or more movement steps wherein the substrate(s) is/are in motion in relation to one another and/or the support,with at least part of the metal, preferably most of the metal, being deposited during the coating steps.

Thin film formation on semiconductor wafer

A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

Low temperature chemical vapor deposition of protective coating containing platinum

A method is disclosed to deposit aluminum and platinum on substrates for improved corrosion, oxidation, and erosion protection. Low temperature chemical vapor deposition is used. A homogeneous biphase coating of aluminum and platinum may be deposited, as well as sequential layers of aluminum and platinum.

CVD apparatus and CVD method

The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

Method of coating gas turbine components

A method of forming a metal coating on surfaces of internal passages of a turbine blade includes, in an exemplary embodiment, the steps of positioning the turbine blade in a CVD chamber, coupling a reagent gas manifold to at least one internal passage inlet, and coating the surfaces of the at least one internal passage by a CVD process using metal coating reagent gases to form a metal coating on the surfaces of the at least one internal passage.

Method for low temperature aluminum coating of an article

A method is provided for coating a surface of an article with aluminum at a low temperature no greater than about 310° C and less than a selected temperature exposure above which adversely can affect article integrity. The method includes providing an aluminizing vapor, for example a vapor of an organo-metallic material, which can decompose to substantially pure Al in a low decomposition temperature range. At least the portion of the surface to be coated is heated to the decomposition temperature range and then exposed to the vapor which decomposes and deposits a layer of Al on the surface portion. The Al then is diffused into the portion at a temperature consistent with other heat treatment of the article and which will not affect adversely properties and conditions previously introduced and desired to be retained in the article. The method is particularly useful in aluminizing a portion of an article surface associated with or near another portion which includes a thermal barrier coating ...

СПОСОБ ПОЛУЧЕНИЯ ПОДЛОЖКИ С ПОКРЫТИЕМ, ПОДЛОЖКА С ПОКРЫТИЕМ И ЕЕ ПРИМЕНЕНИЕ

1. Способ получения подложки с многозонным металлическим покрытием, включающий следующие стадии:(i) нагревание металлического материала, необязательно включающего металлический наружный слой, имеющий иной состав, чем упомянутый металлический материал, до температуры Т1;(ii) при Т1 осаждение в течение периода времени между 10 с и 12 мин покрытия из алюминия, магния и/или цинка на упомянутый металлический материал методом химического осаждения из паровой фазы металлоорганических соединений с использованием одного или более металлосодержащих предшественников, выбранных из группы, состоящей из алюминийсодержащих предшественников и/или магнийсодержащих предшественников и/или цинксодержащих предшественников, причем Т1 представляет собой температуру, при которой скорость диффузии осажденного(ых) металла(ов) и металла(ов) металлического материала и/или металлического наружного слоя выше или равна скорости осаждения осажденного(ых) металла(ов), но которая ниже точки плавления металлического материала или металлического наружного слоя, либо которая ниже точки плавления сформированного металлического покрытия, в зависимости от того, какая точка плавления является наиболее низкой, при условии, что состав металла на внешней стороне металлического материала не идентичен составу осажденного(ых) металла(ов); и(iii) охлаждение до температуры Т2 и продолжение осаждения, причем Т2 представляет собой температуру, при которой скорость диффузии металлов ниже скорости осаждения металла(ов), но которая по меньшей мере равна температуре, при которой скорость осаждения осаждаемого(ых) металла(ов) составляет более 0,2 мкм в минуту. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК C23C 16/20 (13) 2012 107 435 A (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2012107435/02, 28.07.2010 (71) Заявитель(и): АКЦО НОБЕЛЬ КЕМИКАЛЗ ИНТЕРНЭШНЛ Б.В. (NL) Приоритет(ы): (30) Конвенционный приоритет: 31.07.2009 US 61/230,265; 12.08.2009 EP 09167692.4 (85) ...

Gas plating with aluminium using aluminium triisobutyl

An article is plated with aluminium by the thermal decomposition of aluminium triisobutyl, which may contain up to 50% diisobutyl aluminium hydride. As described, the article is heated to 275 DEG C.-325 DEG C. in an inert gas such as nitrogen, helium or argon and contacted with aluminium triisobutyl entrained in inert gas. The plated article may be subsequently heat-treated at 400 DEG C. Materials which may be plated include iron, steel, copper, brass, magnesium, glass, plastics, wood and paper. Two forms of plating apparatus are disclosed which respectively comprise horizontal and vertical plating chambers. Specifications 788,619 and 868,844 are referred to.

METHOD FOR APPLYING ALUMINUM COATING TO FABRICATED CATALYTIC EXHAUST SYSTEM COMPONENT

A method is provided for forming a component used in hot waste gas exhaust systems, such as for automotive catalytic converters, including selecting an alloyed steel sheet, such as stainless steel, forming the component, coating with aluminum by thermally decomposing a gaseous mixture comprising an aluminumbearing compound, such as triethyl aluminum and trimenthyl aluminum, and a carrier gas, such as argon, nitrogen, and helium, then heating the aluminum of the coating to corrosively protect the exhaust component by either oxidizing the aluminum to form an alumina layer, or diffusing aluminum into the steel, or both.

Procédé de réalisation d'un film protecteur sur un substrat à base de magnésium, application à la protection des alliages de magnésium, substrats obtenus

L'invention concerne un procédé de réalisation d'un film protecteur sur un substrat métallique à base de magnésium. Ce procédé consiste à déposer successivement par dépôt chimique en phase vapeur au moins une couche intermédiaire métallique notamment à base d'aluminium, et au moins une couche de surface d'un oxyde métallique notamment oxyde de titane. Dans le cas d'une couche intermédiaire d'aluminium, le précurseur choisi est du triisobutylaluminium, le substrat étant chauffé à une température comprise entre 250degre(s) et 320 degre(s)C. Dans le cas d'une couche de surface en oxyde de titane, le précurseur choisi est du tétraisopropylorthotitanate, le substrat étant chauffé à une température comprise entre 360degre(s) et 400 degre(s)C. Le film protecteur conforme à l'invention présente une grande dureté superficielle et adhère parfaitement sur le substrat à base de magnésium; grâce à sa parfaite inertie sur le plan électrochimique, il constitue une protection efficace non seulement en ...

ORGANOMETALLIC PRECURSOR, METHOD OF FORMING A THIN FILM USING THE ORGANOMETALLIC PRECURSOR AND METHOD OF MANUFACTURING A METAL WIRING, CAPABLE OF MAINTAINING INFLOW SEED OF ORGANOMETALLIC CONSTANT

PURPOSE: An organometallic precursor, method of forming a thin film using the same is provided to reduce intermolecular interaction of organometallic precursors by adding polarizability reduction amine-based ligand into organometallic precursor. CONSTITUTION: An organometallic precursor includes a core metal, borohydride around the core metal and polarizability reduction amine-based ligand. A thin film of the semiconductor device is formed on the substrate by proving an organometallic precursor on the substrate and disassembling organometallic precursor. The polarizability reduction amine-based ligand comprises amine or the nonaromatic heterocyclic the amine, which comprises the C2-C10 alkyl group and the cycloalkyl radical or the aromatic hydrocarbon group. © KIPO 2009 ...

반사기 막 성장을 위한 방법들

... 반사기 막들을 형성하기 위한 방법들 및 장치가 기술된다. 라이너와 반사기 층 형성 사이에 산소 노출이 없도록, 기판 표면 상에 라이너가 형성된 후에 반사기 층이 형성된다. 일부 실시예들에서, 고종횡비 구조는, 구조의 최상부 부분에서 성장이 억제되는 동안 반사기 재료로 구조를 부분적으로 충전하고, 기판의 최상부 부분을 재활성화시키고, 이후에 구조를 반사기 재료로 충전함으로써 반사기 재료로 충전된다.

PROCESS FOR THE GENERATION OF METAL-CONTAINING FILMS

Aluminum complex derivatives for chemical vacuum evaporation and the method of producing the same

Organometallic compounds useful for forming aluminum films by chemical vapor deposition are disclosed. Also disclosed are methods of preparing the organimetallic compounds and methods of forming aluminum films.

Process for selectively depositing copper aluminum alloy onto a substrate

An improved method is provided for depositing a thin copper aluminum alloy film on a patterned silicon substrate. A copper base layer conforming to the existing pattern is initially formed on the surface of the substrate, followed by contact with vapors of an aminealane compound, which causes aluminum to be selectively deposited on the copper base layer portion of the substrate. Preferably, copper is applied to a diffusion barrier surface such as tungsten using chemical vapor deposition from a complex of copper (I) perfluoroalkyl- beta -diketonate and an olefin or silylolefin. The entire process of developing an alloy film can be carried out without exceeding 200 DEG C.

METHOD FOR FORMING PROTECTIVE FILM ON BASE BODY OF MAGNESIUM BASE MATERIAL, AND APPLICATION TO PROTECTION OF MAGNESIUM ALLOY AND RESULTED BASE BODY

PURPOSE: To form an electrochemically inert protective film on a magnesium base body, and to eliminate the danger of corrosion, by chemically depositing an intermediate layer consisting of an aluminum base material and an oxide layer in a vapor phase on the magnesium base body and executing the deposition by the decomposition of precursors at a specified temp. CONSTITUTION: The base body is arranged within a reaction apparatus 1. The precursor is sent from a generator 6 of the precursor of the metal oxide to the reaction apparatus 1. At least two layers are formed by chemical deposition in a vapor phase on the magnesium base body. Namely, the two layers, one of which is the intermediate layer of the metallic aluminum base material and the other is the layer consisting of the metal oxide, such as titanium oxide or alumina as the base material superposed thereon are deposited. The precursors are deposited by contact decomposition on the base body in the vapor phase by using the precursor ...

COMPOUND FOR CHEMICAL VACUUM DEPOSITION AND ITS PRODUCTION

PROBLEM TO BE SOLVED: To obtain a new compound which is useful for the vacuum deposition of an alumina film used as a dielectric material in semiconductor devices. SOLUTION: An organic metal complex expressed by the formula: R'R"R'''Al: Ln {R', R", R''' are each a 1 to 5C alkyl, a perfluoroalkyl or the like: L is one or more organic Lewis bases which can give one or more non-covalent electron pairs to the aluminum central metal and are selected from thiophene and an organic amine of formula I or II [R is a 1 to 4C alkyl; R1, R2, R21 to R24 are H or a 1 to 2C alkyl; X is O or an alkyl-substituted N; (k), (l) are each an integer of 1 to 3; (m) is an integer of 2 to 8]; (n) is 1 or 2}, and is useful for the vacuum deposition of a highly pure alumina film on a substrate by a chemical deposition method. For example, 1- methylpyrrolidinetrimethylaluminum. The compound of the formula is obtained by reacting a trialkylaluminum compound with a Lewis base such as an alkylpyrrolidine, an alkylpiperidine ...

МЕТАЛЛИЗАЦИЯ ОСНОВЫ (ОСНОВ) СПОСОБОМ ОСАЖДЕНИЯ ИЗПАРОЖИДКОСТНОЙ ФАЗЫ

FIELD: technological processes. SUBSTANCE: invention is related to metal coatings that are applied by means of chemical-thermal deposition from steam phase, and also to products and methods. Metal-containing precursor is transported in transport medium via chamber to base at temperature in transport volume that is less than temperature of metal-containing precursor decomposition. Deposition of metal layer onto base is carried out by means of decomposition of metal-containing precursor on base. Temperature at base is higher than decomposition temperature of metal-containing precursor. Temperature of base and temperature of metal-containing precursor in transport volume are measured directly. Rate of deposition and quality of mentioned metal layer on specified base is controlled by means of regulation of specified base temperature and temperature of metal-containing precursor in transport volume with application of transport mediums that are saturated with precursor. Temperature is regulated between transport mediums and base and during maintenance of conditions for transport mediums that are at least close to saturation. EFFECT: improves quality of thin film from deposited material and significantly reduces formation of metal dust. 44 cl, 10 dwg, 2 tbl, 12 ex ÐÎÑÑÈÉÑÊÀß ÔÅÄÅÐÀÖÈß RU (19) (11) 2 330 122 (13) C2 (51) ÌÏÊ C23C 16/52 C23C 16/06 C23C 16/44 (2006.01) (2006.01) (2006.01) ÔÅÄÅÐÀËÜÍÀß ÑËÓÆÁÀ ÏÎ ÈÍÒÅËËÅÊÒÓÀËÜÍÎÉ ÑÎÁÑÒÂÅÍÍÎÑÒÈ, ÏÀÒÅÍÒÀÌ È ÒÎÂÀÐÍÛÌ ÇÍÀÊÀÌ (12) ÎÏÈÑÀÍÈÅ ÈÇÎÁÐÅÒÅÍÈß Ê ÏÀÒÅÍÒÓ (21), (22) Çà âêà: 2006113115/02, 16.09.2004 (72) Àâòîð(û): ÄÈÂÅÍÏÎÐÒ Äåííèñ Ëåîí (US), ÒÎÐÍÒÎÍ Äæîí Ëîðåíñ Ìë. (US), ÒÐÝÍ Íýì Õàíã (US), ÍÜÞÁÅÐà Ñýìþýëü Ñ. (US) (24) Äàòà íà÷àëà îòñ÷åòà ñðîêà äåéñòâè ïàòåíòà: 16.09.2004 (73) Ïàòåíòîîáëàäàòåëü(è): ÀÊÖÎ ÍÎÁÅËÜ Í.Â. (NL) (43) Äàòà ïóáëèêàöèè çà âêè: 20.11.2007 R U (30) Êîíâåíöèîííûé ïðèîðèòåò: 19.09.2003 US 60/504,641 (45) Îïóáëèêîâàíî: 27.07.2008 Áþë. ¹ 21 2 3 3 0 1 2 2 (56) Ñïèñîê äîêóìåíòîâ, öèòèðîâàííûõ â îò÷åòå î ïîèñêå: ...

Vorrichtung zur chemischen Abscheidung aus der Dampfphase unter Gebrauch von flüssigem Ausgangsmaterial

Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage

DEPOSITION TECHNIQUES

Polyoxymethylenes with high molecular weights stabilized with respect to the photod' gradation

Process and apparatus of metallization

PROCEDE ET DISPOSITIF DE REVETEMENT METALLIQUE PAR DEPOT SOUS FORME DE VAPEURS

Procédé et dispositif de dépôt de pellicules d'aluminium à partir de composés d'aluminium volatils. Le procédé selon l'invention permet le dépôt par pyrolyse d'aluminium à partir de triisobutyle d'aluminium. Il comprend les étapes suivantes : le passage d'un courant d'argon ou d'azote secs, exempts d'oxygène, dans une certaine quantité de triisobutylaluminium liquide maintenu à une température inférieure à 90 degrés C de façon à entraîner une certaine partie des vapeurs de triisobutylaluminium, l'introduction d'argon et du triisobutylaluminium entraîné dans une chambre de réaction contenant les pièces à revêtir, l'introduction sélective par pulsations d'argon ou d'azote secs, exempts d'oxygène, dans la chambre de réaction de façon à assurer une répartition de triisobutylaluminium sensiblement uniforme à l'intérieur du récipient, et le maintien des pièces à une température comprise entre 250 et 270 degrés C, ce qui provoque le dépôt par pyrolyse d'aluminium sur lesdites pièces. Application ...

METHOD OF MANUFACTURING ALUMINIUM-COATED CARBON FIBRE

Reflective and resistant coatings and methods for applying to composite structures

A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM AND METHOD

A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber, and introducing a second process material within the process chamber. A first level of electromagnetic power is coupled to the process chamber to generate a plasma that releases contaminants from at least one of a process chamber component or the substrate, and a second level of electromagnetic power higher than the first level is coupled to the process chamber during introduction of the second process material to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate.

A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM AND METHOD

A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber, and introducing a second process material within the process chamber. A first level of electromagnetic power is coupled to the process chamber to generate a plasma that releases contaminants from at least one of a process chamber component or the substrate, and a second level of electromagnetic power higher than the first level is coupled to the process chamber during introduction of the second process material to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate.

ENHANCING CATALYTIC ACTIVITY OF NANOPOROUS MATERIALS

The present invention relates to the use of atomic layer deposition (ALD) techniques to enhance the acid catalytic activity of nanoporous materials.

Method of coating gas turbine components

A method of forming a metal coating on surfaces of internal passages of a turbine blade includes, in an exemplary embodiment, the steps of positioning the turbine blade in a CVD chamber, coupling a reagent gas manifold to at least one internal passage inlet, and coating the surfaces of the at least one internal passage by a CVD process using metal coating reagent gases to form a metal coating on the surfaces of the at least one internal passage.

Method and Apparatus for Fabricating Fibers and Microstructures from Disparate Molar Mass Precursors

The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain ...

Surface passivation techniques for chamber-split processing

Surface passivation techniques for chamber-split processing are described. A method includes forming a first Group III-V material layer above a substrate, the first Group III-V material layer having a top surface. A passivation layer is deposited on the top surface of the Group III-V material layer. The passivation layer is removed. Subsequently, a second Group III-V material layer is formed above the first Group III-V material layer.

Forming aluminium@ plug by selective chemical vapour deposition

An improved method of fabricating an aluminum plug using a selective chemical vapor deposition (CVD) procedure. A semiconductor component is first formed in a substrate having an insulating layer formed over the surface thereof. The insulating layer has a contact opening formed therein that exposes a conductive region of the semiconductor component. Then, a vacuum thermal annealing treatment is performed on the device substrate. Dimethylethylamine alane (DMEAA) is used as a precursor for then depositing an aluminum layer over the surface of the substrate, using a CVD procedure performed at a substrate temperature not exceeding 250 {C, for fabricating an aluminum plug in the contact opening. The aluminum plug is selectively deposited over the surface of the exposed conductive region, while relatively not deposited over the surface of the insulating layer.

VERFAHREN ZUM VERSORGEN EINER DOSIERTEN DAMPFSTRÖMUNG SOWIE ANLAGE ZUR DURCHFÜHRUNG DES VERFAHRENS.

Apparatus for treating a gas stream

CORROSION PROTECTION OF METAL SURFACES

METAL DEPOSITION

METHOD OF MAKING A DEVICE COMPRISING A PATTERNED ALUMINUM LAYER

METHOD OF MAKING A DEVICE COMPRISING A PATTERNED ALUMINUM LAYER Abstract This invention relates to a method of making a device comprising a patterned aluminum layer, wherein the aluminum layer is produced by chemical vapor deposition of an aluminum layer on a substrate. The deposition is facilitated by surface activation prior to deposition. Surface activation is at relatively low temperature and results in a hydrated surface; low temperature surface activation is advantageous in the interest of keeping deposition apparatus free of additional chemicals, and substrates activated in this manner may be stored for considerable lengths of time prior to aluminum deposition. i Among suitable activating agents are organochromium, organosilane, and organoaluminum compounds.

Aluminum precursor composition

The present disclosure is related to an aluminum-containing precursor composition, especially a precursor composition which is vaporized to be used for vapor phase deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD).

Area selective nanoscale-thin layer deposition via precise functional group lithography

The present disclosure relates to a method of depositing a nanoscale-thin film onto a substrate. The method generally comprises depositing a layer of a solid or gaseous state functionalizing molecule onto or adjacent to the first surface of the substrate and exposing the first surface to a source of ionizing radiation, thereby functionalizing the first surface of the substrate. Once the layer of functionalizing molecule is removed, a nanoscale-thin film is then deposited onto the functionalized first surface of the substrate.

METHOD OF MANUFACTURING OXIDE CRYSTAL THIN FILM

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide. 1. A method of manufacturing an oxide crystal film comprising:preparing a raw material solution comprising water and at least one compound that is selected from among gallium bromide and indium bromide;forming raw material particles from the raw material solution comprising water and the at least one compound;supplying a carrier gas to the raw material particles;carrying the raw material particles to a surface of a sample by the carrier gas; andforming the oxide crystal film that is a corundum-structured gallium oxide film or a corundum-structured indium oxide film,wherein the oxide crystal film is for a semiconductor device.2. The method of claim 1 , whereinthe raw material solution includes gallium bromide.3. The method of claim 1 , whereinthe at least one compound with a concentration that is 0.001 to 10 mol/L is included in the raw material solution.4. The method of claim 1 , whereinthe sample includes a substrate having a corundum structure.5. The method of claim 1 , whereinthe sample includes a sapphire substrate.6. The method of claim 1 , whereinthe oxide crystal film is formed at a temperature that is in a range of from 400° C. to 700° C.7. The method of claim 1 , whereinthe oxide crystal film is a ...

Method and Apparatus for Fabricating Fibers and Microstructures from Disparate Molar Mass Precursors

The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication.

PROCESS FOR THE GENERATION OF METAL-CONTAINING FILMS

Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state 2. The process according to claim 1 , wherein R is methyl claim 1 , ethyl claim 1 , tert-butyl claim 1 , trimethylsilyl or two R form together a five membered ring and R′ is hydrogen.3. The process according to claim 1 , wherein a metal-containing compound is deposited from the gaseous state onto the solid substrate before bringing it in contact with a compound of general formula (I) or (II).4. The process according to claim 3 , wherein the metal-containing compound contains Ti claim 3 , Ta claim 3 , Mn claim 3 , Mo claim 3 , W claim 3 , Al claim 3 , Co claim 3 , Ga claim 3 , Ge claim 3 , Sb claim 3 , or Te.5. The process according to claim 3 , wherein the metal-containing compound is a metal halide.6. The process according to claim 1 , wherein the adsorbed compound of general formula (I) or (II) is decomposed.7. The process according to claim 1 , wherein the sequence containing bringing a solid substrate in contact with a compound of general formula (I) or (II) and depositing a metal-containing compound or decomposing the adsorbed compound of general formula (I) or (II) is performed at least twice.8. The process according to claim 1 , wherein the compound of general formula (I) has a molecular weight of not more than 600 g/mol.9. The process according to claim 1 , wherein the compound of general formula (I) has a vapor pressure at least 1 mbar at a temperature of 200° C.11. The compound according to claim 10 , wherein R′ is hydrogen and R is R is methyl claim 10 , ethyl claim 10 , tert-butyl or trimethylsilyl claim 10 , or two R form together a five-membered ring. The present invention is in the field of processes for the generation of inorganic metal-containing films on substrates, in particular atomic layer deposition processes.With the ongoing miniaturization, e.g. in the ...

PROCESS FOR THE GENERATION OF METAL-CONTAINING FILMS

Described herein is a process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state 2. The process according to claim 1 , wherein R is methyl claim 1 , ethyl claim 1 , tert-butyl claim 1 , trimethylsilyl or two R form together a five membered ring and R′ is hydrogen.3. The process according to claim 1 , wherein if E is NR or A is OR claim 1 , R in NR or OR bears no hydrogen atom in the 1-position.4. The process according to claim 1 , wherein a metal-containing compound is deposited from the gaseous state onto the solid substrate before bringing it in contact with a compound of general formula (I) claim 1 , (II) claim 1 , (III) claim 1 , or (IV).5. The process according to claim 4 , wherein the metal-containing compound contains Ti claim 4 , Ta claim 4 , Mn claim 4 , Mo claim 4 , W claim 4 , Al claim 4 , Co claim 4 , Ga claim 4 , Ge claim 4 , Sb claim 4 , or Te.6. The process according to claim 4 , wherein the metal-containing compound is a metal halide.7. The process according to claim 1 , wherein the adsorbed compound of general formula (I) claim 1 , (II) claim 1 , (III) claim 1 , or (IV) is decomposed.8. The process according to claim 4 , wherein the sequence containing bringing a solid substrate in contact with a compound of general formula (I) claim 4 , (II) claim 4 , (III) claim 4 , or (IV) and depositing a metal-containing compound or decomposing the adsorbed compound of general formula (I) claim 4 , (II) claim 4 , (III) claim 4 , or (IV) is performed at least twice.9. The process according to claim 1 , wherein the compound of general formula (I) has a molecular weight of not more than 600 g/mol.10. The process according to claim 1 , wherein the compound of general formula (I) has a vapor pressure at least 1 mbar at a temperature of 200° C.13. The compound according to claim 10 , wherein R′ is hydrogen and R is R is methyl claim 10 , ethyl claim 10 , tert-butyl or trimethylsilyl claim ...

SELECTIVE ALUMINUM OXIDE FILM DEPOSITION

Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant. 1. A method of depositing a film , the method comprising:positioning a substrate having a metal layer and a dielectric layer in a processing chamber;exposing the substrate, in the absense of trimethlyaluminum (TMA), to an organometallic precursor to selectively deposit a metal film on the metal layer relative to the dielectric layer, the metal film comprising aluminum;purging the processing chamber of the organometallic precursor,exposing the substrate to an oxidant to react with the metal film to form metal oxide film on the metal layer, the metal oxide film comprising aluminum oxide; andpurging the processing chamber of the oxidant.2. The method of claim 1 , wherein the organometallic precursor comprises one or more of tri-tertbutylaluminum (TTBA) claim 1 , bis(2-methyl-2-propanyl)-(2-methyl-1-propanyl)aluminum) claim 1 , (2-methyl-2-propanyl)bis(2-methyl-1-propanyl)aluminum) claim 1 , tris(2-methyl-1-propanyl)aluminum) claim 1 , triethyl aluminum (TEA) claim 1 , tri(neopentyl) aluminum claim 1 , or aluminum isopropoxide.3. The method of claim 2 , wherein the organometallic precursor comprises one or more of tri-tertbutylaluminum claim 2 , bis(2-methyl-2-propanyl)-(2-methyl-1-propanyl)aluminum) claim 2 , (2-methyl-2-propanyl)bis(2-methyl-1-propanyl)aluminum) claim 2 , tris(2-methyl-1-propanyl)aluminum).4. (canceled)5. The method of claim 1 , wherein the dielectric layer comprises one or more of oxides claim 1 , carbon doped oxides claim 1 , porous silicon dioxide (SiO) claim 1 , silicon oxide (SiO) claim 1 , silicon nitride (SiN) claim 1 , carbides claim 1 , oxycarbides claim 1 , nitrides claim 1 , oxynitrides claim 1 , oxycarbonitrides claim 1 , carbonitrides claim 1 , ...

METHOD OF MANUFACTURING OXIDE CRYSTAL THIN FILM

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide. 1. A method of manufacturing an oxide crystal film comprising:preparing a raw material solution comprising water and at least one compound that is selected from among gallium bromide, gallium iodide, indium bromide and indium iodide;forming raw material particles from the raw material solution comprising water and the at least one compound;carrying the raw material particles to a surface of a sample by a carrier gas; andforming an oxide crystal film comprising a corundum structure on the surface of the sample that comprises a corundum structure.2. The method of claim 1 , wherein{'sub': 2', '3, 'the oxide crystal film comprising the corundum structure comprises an α-phase InOcrystal.'}3. The method of claim 1 , wherein{'sub': 2', '3, 'the oxide crystal film comprising the corundum structure comprises an α-phase GaOcrystal.'}4. The method of claim 1 , whereinthe oxide crystal film comprising the corundum structure is a mixed crystal film.5. The method of claim 1 , whereinthe at least one compound with a concentration that is 0.005 to 2 mol/L is comprised in the raw material solution.6. The method of claim 1 , whereinthe carrier gas has a flow rate of 0.5 to 10 L/min.7. The method of claim 2 , wherein{'sub': 2', ...

TRIS(DIALKYLAMIDE)ALUMINUM COMPOUND, AND METHOD FOR PRODUCING ALUMINUM-CONTAINING THIN FILM USING SAME

The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): 3. A method of producing an aluminum-containing thin film by a chemical vapor deposition method claim 1 , wherein a tris(dialkylamide)aluminum compound as claimed in is used as an aluminum source. The present invention relates to a novel tris(dialkylamide)aluminum compound, and a method of producing an aluminum-containing thin film on an object by a chemical vapor deposition method (hereinafter, referred to as CVD method) using the aluminum compound.Conventionally, various aluminum compounds such as alkyl aluminums, aluminum hydride, aluminum amide, aluminum alkoxide and aluminum diketonato, for example, have been studied as aluminum compounds to be used for the formation of aluminum-containing thin films (See, for example, Patent Literatures 1 to 3). Among them, trimethyl aluminum, aluminum hydride, and analogs thereof are mostly employed.Patent Literature 1: JP-A-2006-526705Patent Literature 2: JP-B-4716193Patent Literature 3: JP-A-2007-138296However, the conventional aluminum compounds do not necessarily have optimal properties such as vapor pressure, heat stability and reactivity for the formation of aluminum-containing thin film, and it may not be said that these compounds are adequate aluminum compounds for the formation of aluminum-containing thin film. In addition, trimethyl aluminum, which is most commonly employed, is pyrophoric, and therefore is very dangerous and difficult to handle. Accordingly, there is a need for aluminum compound having all properties such as vapor pressure, heat stability, reactivity and safety satisfying the requirements.An object of the present invention is to solve the above-mentioned problems, and to provide an aluminum compound which is suitable for industrial use and from which an aluminum- ...

METHOD OF MANUFACTURING OXIDE CRYSTAL THIN FILM

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide. 1. A method for manufacturing an oxide crystal thin film , comprisingcarrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution comprising water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber,wherein at least one of the gallium compound and the indium compound is bromide or iodide.2. The method of claim 1 , whereinthe raw material solution comprises gallium bromide or gallium iodide.3. The method of claim 1 , whereinthe raw material solution comprises indium bromide or indium iodide.4. The method of claim 1 , whereinthe thin film comprises a crystal which is oriented to a certain crystal axis.5. The method of claim 1 , whereinthe thin film has a corundum structure.6. The method of claim 5 , wherein{'sub': X', 'Y', 'Z', '3, 'the thin film is α-phase InAlGaOwhere 0≦X≦2, 0≦Y≦2, 0≦Z≦2, and X+Y+Z=1.5 to 2.5.'}7. The method of claim 1 , whereinthe sample on which films are to be formed and the thin film each have a corundum structure.8. The method of claim 1 , ...

ALUMINUM COMPOUND AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1. 2. The aluminum compound of claim 1 , having a thermal decomposition temperature of 350° C. to 600° C.3. The aluminum compound of claim 1 , wherein claim 1 , in Formula 1 claim 1 , Rand Rare each independently any one selected from the group consisting of an alkyl group of 1 to 4 carbon atoms claim 1 , a dialkylamino group of 2 to 4 carbon atoms claim 1 , an alkoxide group of 1 to 4 carbon atoms claim 1 , and a halogen atom claim 1 ,{'sup': 4', '7, 'wherein Rand Rare each independently any one selected from the group consisting of an alkyl group of 1 to 4 carbon atoms and a (dialkylamino)alkyl group of 3 to 10 carbon atoms,'}{'sup': 5', '6, 'wherein Rand Rare each independently an alkyl group of 1 to 4 carbon atoms, and'}{'sup': '3', 'wherein Ris hydrogen.'}4. The aluminum compound of claim 1 , wherein claim 1 , in Formula 1 claim 1 , Ris any one selected from the group consisting of a methyl group claim 1 , a dimethylamino group claim 1 , and an isopropyl group.5. The aluminum compound of claim 1 , wherein claim 1 , in Formula 1 claim 1 , Ris any one selected from the group consisting of a methyl group claim 1 , a dimethylamino group claim 1 , and an isopropyl group.6. The aluminum compound of claim 1 , wherein claim 1 , in Formula 1 claim 1 , Ris any one selected from the group consisting of a methyl group claim 1 , an ethyl group claim 1 , and an isopropyl group.7. The aluminum compound of claim 1 , wherein claim 1 , in Formula 1 claim 1 , Ris any one selected from the group consisting of a methyl group claim 1 , an ethyl group claim 1 , and an isopropyl group.8. The aluminum compound of claim 1 , wherein claim 1 , in Formula 1 claim 1 , Ris a methyl group or an ethyl group.9. The aluminum compound of claim 1 , wherein claim 1 , in Formula 1 claim 1 , Ris a methyl group or an ethyl group.10. The aluminum ...

GLITTER AND METHOD FOR PRODUCING SAME

The presently disclosed subject matter relates to glitters having improved surface properties, improved brilliance and improved skinfeel, and also to methods for producing them, the glitters having a coating of a metal, such as aluminium, and comprising a substantially antimony-free, polyester-based foil, and also to methods for producing them. 1. Glitter comprising a polyester-based foil coated with a metal , the foil being substantially antimony-free.2. Glitter according to claim 1 , wherein the metal is aluminium.3. Glitter according to claim 1 , the foil being produced with an antimony-free catalyst.4. Glitter according to claim 1 , the metal layer or the foil and the metal layer having a coating based on polyurethane claim 1 , acrylate claim 1 , styrene-acrylate or epoxy or a coating based on a sol-gel-based coating solution.5. Glitter according to claim 2 , the aluminium layer or the foil and the aluminium layer having a coating based on polyurethane claim 2 , acrylate claim 2 , styrene-acrylate or epoxy or a coating based on a sol-gel-based coating solution.6. Glitter according to claim 1 , the foil comprising more than 50 wt % of a polyester.7. Glitter according to claim 1 , the foil further comprising a (meth)acrylate-based polymer in an amount of less than 50 wt %.8. Glitter according to claim 1 , the foil having a thickness of more than 5 μm.9. Glitter according to claim 1 , the antimony-free catalyst comprising at least one metal selected from Ti claim 1 , Al or Ge.10. Method for producing a glitter claim 1 , in which a polyester-based foil is produced with an antimony-free catalyst claim 1 , is coated with a metal claim 1 , and the foil is thereafter cut claim 1 , or the foil is cut and thereafter is coated with a metal.11. The method according to claim 10 , wherein the metal is aluminium12. Method according to claim 10 , the foil having a thickness of more than 5 μm.13. Method according to claim 10 , the foil comprising more than 50 wt % of a polyester ...

Pattern forming material, composition for pattern formation, pattern forming method and method of manufacturing semiconductor device

According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.

Method of fabricating semiconductor device

A method of fabricating a semiconductor device, the method including forming semiconductor patterns on a substrate such that the semiconductor patterns are vertically spaced apart from each other; and forming a metal work function pattern to fill a space between the semiconductor patterns, wherein forming the metal work function pattern includes performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate.

ALUMINUM PRECURSORS FOR THIN-FILM DEPOSITION, PREPARATION METHOD AND USE THEREOF

Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R, R, R, R, R, R, and Reach independently represent a hydrogen atom, C˜Calkyl, halo-C˜Calkyl, C˜Calkenyl, halo-C˜Calkenyl, C˜Ccycloalkyl, halo-C˜Ccycloalkyl, C˜Caryl, halo-C˜Caryl or —Si(R), and wherein Ris C˜Calkyl or halo-C˜Calkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation. 2. The aluminum precursor for thin-film deposition according to claim 1 , wherein Ris C˜Calkyl claim 1 , halo-C˜Calkyl claim 1 , C˜Calkenyl claim 1 , C˜Ccycloalkyl claim 1 , C˜Caryl or —Si(R) claim 1 , Rand Rare C˜Calkyl claim 1 , and R claim 1 , R claim 1 , R claim 1 , and Reach independently are a hydrogen atom or C˜Calkyl.3. The aluminum precursor for thin-film deposition according to claim 1 , wherein claim 1 , Ris isopropyl claim 1 , cyclohexyl claim 1 , ethenyl claim 1 , haloisopropyl or —Si(R) claim 1 , Rand Reach independently are methyl or isobutyl claim 1 , R claim 1 , R claim 1 , R claim 1 , and Rare a hydrogen atom claim 1 , and Ris methyl.5. The method according to claim 4 , wherein the low temperature below room temperature is selected from −78° C. to 0° C.6. The method according to claim 4 , wherein the stirring is performed at room temperature for a time selected from 1 to 8 hours.7. The method according to claim 4 , wherein the temperature for heating to reflux is selected from 20 to 150° C.8. The method according to claim 4 , wherein the molar ratio of the first reactant to the second reactant is selected from 1.0:1.0 to 1.0:2.0.9. The method according to claim 4 , wherein the solvent is selected from: straight or branched CH˜CHalkane claim 4 , CH˜CHcycloalkane claim ...

Method and Apparatus for Fabricating Fibers and Microstructures from Disparate Molar Mass Precursors

The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication. A method of fabricating fibers , comprising:a. introducing a low molar mass precursor species into a reaction vessel, wherein the low molar mass precursor species comprises carbon;b. introducing a high molar mass precursor species into said reaction vessel, the high molar mass precursor species having a molar mass at least 1.5 times greater than the low molar mass precursor species;c. creating (i) a reaction zone within the reaction vessel and (ii) a thermal diffusion region at or near the reaction zone, wherein at least one of the thermal diffusion region and reaction zone is at least partially created by a primary heating means, and the thermal diffusion region at least partially separates the low molar mass precursor species from the high molar mass precursor species and concentrates at least one of the ...

Method and Apparatus for Fabricating Fibers and Microstructures from Disparate Molar Mass Precursors

The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication. 1. A method of fabricating fibers , comprising:a. introducing a low molar mass precursor species into a reaction vessel,b. introducing a high molar mass precursor species into said reaction vessel, said high molar mass precursor species having a molar mass at least 1.5 times greater than the low molar mass precursor species,c. creating (i) a reaction zone within the reaction vessel and (ii) a thermal diffusion region at or near the reaction zone, wherein at least one of the thermal diffusion region and reaction zone is at least partially created by a primary heating means, and the thermal diffusion region at least partially separates the low molar mass precursor species from the high molar mass precursor species and concentrates at least one of the precursor species at the reaction zone, andd. decomposing the at ...

COATING FOR HALIDE PLASMA RESISTANCE

A method of forming a protective coating film for halide plasma resistance includes depositing a seed layer on a surface of an article via an atomic layer deposition (ALD) process, depositing a rare-earth containing oxide layer on the seed layer via an ALD process, and exposing the rare-earth containing oxide layer to fluorine-containing plasma. 1. A method of forming a protective coating film for halide plasma resistance , comprising:depositing a seed layer on a surface of an article via an atomic layer deposition (ALD) process;depositing a rare-earth containing oxide layer on the seed layer via an ALD process; andexposing the rare-earth containing oxide layer to fluorine-containing plasma.2. The method according to claim 1 , wherein the article comprises an aluminum chamber component.3. The method according to claim 1 , wherein the article comprises a silicon wafer.4. The method according to claim 1 , whereinthe seed layer comprises amorphous aluminum oxide, and exposing the surface of the article to gaseous trimethyl-aluminum (TMA); and', 'exposing the surface of the article to water vapor., 'the depositing of the seed layer includes5. The method according to claim 1 , whereinthe seed layer comprises amorphous aluminum oxide, and [{'sub': 2', '4, 'exposing the surface of the article to phydrazine (NH); and'}, 'exposing the surface of the article to hydrogen peroxide (HOOH)., 'the depositing of the seed layer includes6. The method according to claim 1 , wherein{'sub': 2', '3, 'the rare-earth containing oxide layer comprises lanthanum oxide (LaO), and'}{'sub': '3', 'the depositing of the rare-earth containing oxide layer includes exposing the surface of the article to tris(N,N′-diisopropylformamidinato) lanthanum La(PrfAMD)and ozone.'}7. The method according to claim 1 , wherein{'sub': 2', '3, 'the rare-earth containing oxide layer comprises lanthanum oxide (LaO), and'}the rare-earth containing oxide layer is exposed to fluorine-containing plasma for between 3 ...

Aluminum complex derivative for chemical vapor deposition and production of the same derivative

본 발명은 반도체 소자의 배선재료로 쓰이는 알루미늄 금속 박막을 화학 증착법에 의해 실리콘 기판상에 증착시키는데 사용되는 전구체 화합물과 그 화합물의 제조 방법 및 그 화합물을 이용하여 실리콘 기판에 알루미늄 박막을 증착시키는 방법에 관한 것으로, 본 발명은 하기의 화학식 1로 정의되는 유기 금속 착물 및 그 제조 방법을 제공한다. The present invention relates to a precursor compound used to deposit an aluminum metal thin film, which is used as a wiring material of a semiconductor device, on a silicon substrate by chemical vapor deposition, a method for preparing the compound, and a method of depositing an aluminum thin film on a silicon substrate using the compound. The present invention provides an organometallic complex defined by the following Chemical Formula 1 and a method for producing the same. H 3 Al : L n H 3 Al: L n 상기 화학식 1에서 L은 헤테로 사이클릭 아민 중 알킬 아지리딘(aziridine), 알킬 아제티딘(azetidine), 알킬 피롤리딘(pyrrolidine), 알킬 피페리딘(piperidine), 알킬 핵사메칠렌이민(hexamethyleneimeine), 알킬 헵타메칠렌이민(heptamethyleneimine), 알킬 모폴린(morpholine), 1,4-디알킬피페라진(piperazine)과 싸이오펜(thiophene), 싸이오피란(thiopyran)중에서 선택되며, n은 1 또는 2의 정수이다. In Formula 1, L is an alkyl aziridine, alkyl azetidine, alkyl pyrrolidine, alkyl piperidine, alkyl hexamethyleneimine in heterocyclic amine, Alkyl heptamethyleneimine, alkyl morpholine, 1,4-dialkylpiperazine, thiophene, thiopyran, n is 1 or 2 Is an integer.

Precursor for chemical vapor deposition of aluminum thin film and preparing the same

1. 청구 범위에 기재된 발명이 속하는 기술 분야 1. TECHNICAL FIELD OF THE INVENTION 본 발명은 반도체 소자의 배선재료로 쓰이는 알루미늄 금속 박막을 화학 증착법에 의해 실리콘 기판상에 증착시키는데 사용되는 전구체 화합물과 그 화합물의 제조 방법 및 그 화합물을 이용하여 실리콘 기판에 알루미늄 박막을 증착시키는 방법에 관한 것으로, 본 발명은 하기 화학식 1로 정의되는 유기 금속 착물 및 그 제조 방법을 제공한다. The present invention relates to a precursor compound used to deposit an aluminum metal thin film, which is used as a wiring material of a semiconductor device, on a silicon substrate by chemical vapor deposition, a method for preparing the compound, and a method of depositing an aluminum thin film on a silicon substrate using the compound. The present invention relates to an organometallic complex defined by the following formula (1) and a method for producing the same. [화학식 1] [Formula 1] H(R') 2 Al:L n H (R ') 2 Al: L n 상기 화학식 1에서 R'은 탄소수 1내지 4의 알킬, 퍼플루오르알킬(Perfluoroalkyl)중에서 선택되고, L은 헤테로사이클릭아민중 알킬아지리딘(Alkylaziridine), 알킬아제티딘(Alkylazetidine), 알킬피롤리딘(Alkylpyrrolidine), 알킬피페리딘(Alkylpiperidine), 알킬핵사메틸렌이민(Alkylhexamethyleneimine), 알킬헵타메틸렌이민(Alkylheptamethyleneimine), 알킬모폴린(Alkylmorpholine), 1,4-디알킬피페라진(1,4-Dialkylpiperazine)과 싸이오펜(thiophene), 싸이오피란(thiopyran)중에서 선택되며, n은 1또는 2의 정수이다. In Formula 1, R 'is selected from alkyl having 1 to 4 carbon atoms, perfluoroalkyl, L is alkylalziridine, alkylazetidine, alkylpyrrolidine (Alkylazetidine) in heterocyclic amine ( Alkylpyrrolidine, Alkylpiperidine, Alkylhexamethyleneimine, Alkylheptamethyleneimine, Alkylmorphtamline, Alkylmorpholine, 1,4-Dialkylpiperazine (1,4-Dialkylpiperazine) Thiophene or thiopyran, n is an integer of 1 or 2.

两种不同材料同时选择性沉积在两个不同表面上

在一些实施例中，提供了使用相同反应化学物质同时且选择性地将第一材料沉积在衬底的第一表面上和将第二不同材料沉积在同一衬底的第二不同表面上的方法。例如，第一材料可选择性地沉积在金属表面上，而第二材料同时且选择性地沉积在相邻的介电表面上。所述第一材料和所述第二材料具有不同的材料特性，如不同蚀刻速率。

Organometallic precursors solution for chemical deposition of metal thin films and preparation method there of

본 발명은 반도체 소자의 배선재료로 쓰이는 알루미늄 박막의 증착 공정에서 사용되는 유기알루미늄 전구체 용액 및 그 제조 방법에 관한 것으로서, 본 발명에서는 알랜계 전구체 화합물을 싸이클로펜타디엔계 유기화합물에 용해시켜 알루미늄 증착용 전구체 용액으로 사용함에 따라 싸이클로펜타디엔계 유기화합물이 알랜계 전구체 화합물의 열적 안정성을 향상시켜주어 증착과정에서 알랜계 전구체 화합물이 분해되는 것을 막아주며, 그에 따라 고순도의 알루미늄 박막을 재현성 있게 제조할 수 있도록 한 화학 증착용 유기 알루미늄 전구체 용액 및 그 제조방법을 제공한다. The present invention relates to an organoaluminum precursor solution used in a deposition process of an aluminum thin film used as a wiring material of a semiconductor device, and a method for manufacturing the same. In the present invention, an allan precursor compound is dissolved in a cyclopentadiene organic compound to deposit aluminum. By using as a precursor solution, cyclopentadiene-based organic compounds improve the thermal stability of the allan-based precursor compound to prevent decomposition of the allan-based precursor compound during the deposition process, thereby producing a high-purity aluminum thin film reproducibly. The present invention provides an organic aluminum precursor solution for chemical vapor deposition, and a method of manufacturing the same.

アルミニユ−ム被膜の作製方法

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Aluminium precursor for cvd and its preparation method thereof

An aluminum precursor for CVD(Chemical Vapor Deposition) and a preparation method thereof are provided to improve the deposition rate, resistance, purity, adhesive ability and reflectivity of aluminum thin film deposited to a silicon substrate by improving thermal stability of the aluminum precursor. An aluminum precursor for depositing high purity aluminum thin film on a substrate through chemical vapor deposition has the structure represented by the formula(1) of H3Al:Ln, wherein L is a Lewis base and an amine-based organic compounds represented by the formula(3), formula(4), formula(5) or formula(6) capable of supplying a noncovalent electron pair to the center of aluminum metal; n is 1; R^15 and R^16 are each independently C1-C5 alkyl group or perfluoroalkyl group; R^3, R^4, R^17 and R^18 are each independently hydrogen, C1-C5 alkyl group or perfluoroalkyl group; l is an integer from 1 to 4; k is an integer from 2 to 8; R^5, R^6, R^19, R^20, R^21 and R^22 are each independently hydrogen or C1-C5 alkyl group or perfluoroalkyl group; o is an integer from 1 to 4, i and j are each independently an integer from 2 to 8; R^23 and R^24 are each independently C1-C5 alkyl group or perfluoroalkyl group; R^7, R^8, R^25, R^26, R^27 and R^28 are each independently hydrogen or C1-C5 alkyl group or perfluoroalkyl group; X is oxygen, sulfur or nitrogen containing alkyl group or perfluoroalkyl group; p is an integer from 1 to 4; q and r are each independently an integer from 1 to 8; R^9, R^10, R^29, R^30, R^31, R^32, R^33, R^34, R^35 and R^36 are each independently hydrogen or C1-C5 alkyl group or perfluoroalkyl group; X' or X" are each independently oxygen, sulfur or nitrogen containing alkyl group or perfluoroalkyl group; s is an integer from 1 to 4; and t, u, v and w are each independently an integer from 1 to 8.

화학기상증착장치

본 발명은 생산성을 높일 수 있는 화학기상증착장치를 개시한다. 그의 장치는 불활성 기체의 버블링을 이용하여 소스 가스를 생성하는 소스 가스 박스와, 상기 소스 가스 박스에서 소스 가스 공급관을 통해 공급되는 상기 소스 가스를 이용하여 일정 온도 및 압력에서 웨이퍼 상에 금속 박막을 형성하는 챔버와, 상기 챔버에 연통하는 배출관을 통해 상기 챔버 내부의 잔류가스를 배기하는 진공펌프와, 상기 배출관 내부의 압력을 감지하는 배출관 압력 감지기와, 상기 소스 가스 공급관에서 상기 제 2 배출관으로 상기 소스 가스 또는 소스 산화물을 상기 진공펌프로 바이패스시키는 덤프 라인과, 상기 덤프 라인 및 상기 제 2 배출관을 통해 상기 소스 가스 또는 소스 산화물이 배기될 경우 상기 제 1 배출관에 형성된 제 2 압력 감지기로 상기 소스 가스가 유입되지 않도록 상기 소스 가스 또는 소스 산화물을 차단하는 압력 감지기 보호용 밸브를 포함하여 이루어진다.

Treatment to Overcome CVD Aluminum Selectivity Loss as Active PVD Aluminum

본 발명은 그 표면상에 형성된 불균질한 도전체 물질 증착물을 갖는 유전체 표면상에 평면 금속 막을 중착하기 위한 처리를 제공한다. 평면 금속 층은 약 150℃보다 큰 온도에서 활발한 물질적인 기상 증착 처리를 이용하는데 형성되며, 250℃보다 큰 것이 바람직하다. 전기적으로 불균질한 도전 물질의 증착물은 높은 가로세로 비인서브 하프 마이크론 개구부에서 금속의 선택 화학 기상 중착중에 일반적으로 형성된다. 선택 CVD 중착물은 평면 금속 막을 얻기 위해 활발한 물리적 기상 중착에 의해 바람직하게 수행된다. 금속화 처리는 PVD 및 CVD 처리 챔버 모두를 포함하는 집적 처리 시스테에서 바람직하게 수행되므로서 상기 기판이 진공 환경에 도입되면 상호 접속을 형성하기 위한 개구부의 금속화는 층사이의 산화물 형성없이 일어난다.

Process for the preparation of a coated substrate, coated substrate and use thereof

本发明涉及一种制备具有多区域金属涂层的基材的方法，其包括如下步骤：使任选包含具有不同于金属材料组成的金属外层的所述金属材料加热至温度T1，沉积铝、镁和/或锌涂层，和冷却至温度T2并继续沉积。此外，还涉及可用所述方法获得的具有多区域金属涂层的基材。

Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors

The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication.

Production method for oxide crystal thin film

提供能够同时实现碳杂质浓度的降低和高成膜速度、并且能够分别制作稳定的结晶结构的薄膜制造方法。本发明提供一种氧化物结晶薄膜的制造方法，其具备：使含有镓化合物和铟化合物中的至少一种和水的原料溶液进行微粒化，将所生成的原料微粒通过载气供给至成膜室中，在上述成膜室内配置的被成膜试样上形成氧化物结晶薄膜的工序，上述镓化合物和铟化合物中的至少一种为溴化物或碘化物。

Method of manufacturing oxide crystal thin film

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

Method for producing oxide crystal thin film

Aluminum thermal decomposition depositing method and apparatus

Method for making oxide crystal thin film

탄소 불순물 농도의 저감과 높은 성막속도를 양립시킬 수 있고, 또한 안정적인 결정구조의 형성 분리를 가능하게 하는 박막 제조 방법을 제공한다 본 발명에 의하면, 갈륨 화합물과 인듐 화합물의 적어도 한쪽과 물을 포함하는 원료 용액을 미립자화하여 생성되는 원료 미립자를 캐리어 가스에 의해 성막실에 공급하여 상기 성막실 내에 배치된 피성막 시료 위에 산화물 결정박막을 형성하는 공정을 구비하고, 상기 갈륨 화합물과 인듐 화합물의 적어도 한쪽은 브롬화물 또는 요오드화물인, 산화물 결정박막의 제조 방법이 제공된다. There is provided a thin film manufacturing method capable of achieving both a reduction in the carbon impurity concentration and a high film forming rate, and also capable of forming and separating a stable crystal structure According to the present invention, the raw material fine particles produced by making the raw material solution containing at least one of the gallium compound and the indium compound and water are made into fine particles are supplied to the film formation chamber by the carrier gas, And a step of forming a thin film, wherein at least one of the gallium compound and the indium compound is bromide or iodide.

Nanomatrix powder metal composite

A powder metal composite is disclosed. The powder metal composite includes a substantially-continuous, cellular nanomatrix comprising a nanomatrix material. The compact also includes a plurality of dispersed particles comprising a particle core material that comprises Mg, Al, Zn or Mn, or a combination thereof, dispersed in the nanomatrix, the core material of the dispersed particles comprising a plurality a plurality of distributed carbon nanoparticles, and a bond layer extending throughout the nanomatrix between the dispersed particles. The nanomatrix powder metal composites are uniquely lightweight, high-strength materials that also provide uniquely selectable and controllable corrosion properties, including very rapid corrosion rates, useful for making a wide variety of degradable or disposable articles, including various downhole tools and components.

Method of forming aluminum interconnection layer

A method of forming an aluminum-based layer mainly including aluminum on a surface of an insulating layer and within a hole formed in the insulating layer. The method includes the steps of: carrying out a chemical vapor deposition to deposit the aluminum-based layer on the surface of the insulating layer and also to incompletely fill the hole to not less than 75% by volume of the hole by use of a source including at least one of alkyl groups and hydrogen so that a surface of the aluminum-based layer is terminated by the at least one of alkyl groups and hydrogen included in the source, and so that the surface of the aluminum-based layer is free of any natural oxide film; and carrying out a heat treatment, without formation of any natural oxide film on the surface of the aluminum-based layer, for causing a re-flow of the aluminum-based layer, whereby the at least one of alkyl groups and hydrogen promotes a migration of aluminum atoms on the surface of the aluminum-based layer.

Method for forming aluminum thin film

PURPOSE: A method is provided to deposit an aluminum thin film for forming metal wiring on a substrate using as a precursor TMEDAA (tetramethylethylenediamine) having thermal stability which is synthesized by replacement reaction of neutral ligands using DMEAA (dimethylethylamine) as a reaction material in the manufacturing process of a semiconductor device. CONSTITUTION: The method for forming an aluminum thin film comprises the steps of loading a substrate into a reactor; maintaining a temperature of the substrate to 160 to 260 deg.C; maintaining the inside of the reactor in the state of vacuum; flowing TMEDAA (tetramethylethylenediamine) along with a carrier gas which is consisted of hydrogen and nitrogen and has a flow rate of 10 to 60 sccm into the reactor using hydrogen and nitrogen; and maintaining the reactor at a pressure of 0.5 to 2 torr for 10 seconds to 30 minutes, wherein a silicon substrate or a TiN/Si substrate is used as the substrate, wherein the method after the step of maintaining the reactor under the certain conditions further comprises the steps of sufficiently cooling the reactor; increasing the internal pressure of the reactor to an atmospheric pressure; and taking out the substrate from the reactor.

Method of forming aluminum film for wiring

콘택홀(13)내를 포함하는 절연막(12)의 표면에, 알루미늄 화학기상성장에 대한 핵형성작용을 가지는 핵형성층(14)을 형성하고, 다음에, 콘택홀(13)내벽을 포함하는 절연막(12)의 표면에, 콘택홀(13)의 반경중의 최소 반경보다 얇은 두께의 알루미늄막(15)을 화학기상성장에 의해 형성한다. 다음에, 알루미늄막(15)의 표면이 자연산화막에 피복되기 전에 열처리를 행하여 알루미늄의 리플로우를 행하고, 콘택홀(13)내가 완전히 알루미늄막(15)으로 매립되도록 함으로써, 층간절연막등에 형성된 높은 애스펙트비의 콘택홀 및 스루홀을 알루미늄막으로 보이드가 없이 완전히 매립한다. On the surface of the insulating film 12 including the contact hole 13, a nucleation layer 14 having a nucleation effect on aluminum chemical vapor growth is formed, and then an insulating film including an inner wall of the contact hole 13 On the surface of (12), an aluminum film 15 having a thickness thinner than the minimum radius of the radius of the contact hole 13 is formed by chemical vapor growth. Next, before the surface of the aluminum film 15 is coated with the natural oxide film, heat treatment is performed to reflow aluminum, and the contact hole 13 is completely filled with the aluminum film 15, thereby forming a high aspect formed on the interlayer insulating film or the like. Rain contact holes and through holes are completely filled with aluminum films without voids.

METHOD AND DEVICE FOR METAL COATING BY DEPOSIT IN THE FORM OF VAPORS

Procédé et dispositif de dépôt de pellicules d'aluminium à partir de composés d'aluminium volatils. Le procédé selon l'invention permet le dépôt par pyrolyse d'aluminium à partir de triisobutyle d'aluminium. Il comprend les étapes suivantes : le passage d'un courant d'argon ou d'azote secs, exempts d'oxygène, dans une certaine quantité de triisobutylaluminium liquide maintenu à une température inférieure à 90 degrés C de façon à entraîner une certaine partie des vapeurs de triisobutylaluminium, l'introduction d'argon et du triisobutylaluminium entraîné dans une chambre de réaction contenant les pièces à revêtir, l'introduction sélective par pulsations d'argon ou d'azote secs, exempts d'oxygène, dans la chambre de réaction de façon à assurer une répartition de triisobutylaluminium sensiblement uniforme à l'intérieur du récipient, et le maintien des pièces à une température comprise entre 250 et 270 degrés C, ce qui provoque le dépôt par pyrolyse d'aluminium sur lesdites pièces. Application au revêtement avec des pellicules d'aluminium des électrodes de condensateur ou des trajets conducteurs de dispositifs à semi-conducteurs. Method and device for depositing aluminum films from volatile aluminum compounds. The process according to the invention allows the deposition by pyrolysis of aluminum from triisobutyl aluminum. It comprises the following steps: passing a stream of dry argon or nitrogen, free of oxygen, through a certain quantity of liquid triisobutylaluminum maintained at a temperature below 90 degrees C so as to entrain a certain part of the triisobutylaluminum vapors, the introduction of argon and triisobutylaluminum entrained in a reaction chamber containing the parts to be coated, the selective introduction by pulses of dry, oxygen-free argon or nitrogen into the reaction chamber so as to ensure a substantially uniform distribution of triisobutylaluminum inside the container, and to ...

PROCESS FOR PRODUCING A PROTECTIVE FILM ON A MAGNESIUM BASED SUBSTRATE, APPLICATION TO THE PROTECTION OF MAGNESIUM ALLOYS, SUBSTRATES OBTAINED

L'invention concerne un procédé de réalisation d'un film protecteur sur un substrat métallique à base de magnésium. Ce procédé consiste à déposer successivement par dépôt chimique en phase vapeur au moins une couche intermédiaire métallique notamment à base d'aluminium, et au moins une couche de surface d'un oxyde métallique notamment oxyde de titane. Dans le cas d'une couche intermédiaire d'aluminium, le précurseur choisi est du triisobutylaluminium, le substrat étant chauffé à une température comprise entre 250degre(s) et 320 degre(s)C. Dans le cas d'une couche de surface en oxyde de titane, le précurseur choisi est du tétraisopropylorthotitanate, le substrat étant chauffé à une température comprise entre 360degre(s) et 400 degre(s)C. Le film protecteur conforme à l'invention présente une grande dureté superficielle et adhère parfaitement sur le substrat à base de magnésium; grâce à sa parfaite inertie sur le plan électrochimique, il constitue une protection efficace non seulement en conditions statiques mais également en conditions dynamiques.

Aluminide or chromide coating of turbine engine rotor component

A turbine engine rotor component (30), such as a compressor or turbine disk or seal element, is protected from corrosion by depositing an aluminum or chromium coating on the component (30). The deposition can be performed by a vapor deposition process, such as metal organic chemical vapor deposition (MOCVD), to a coating thickness of from about 0.2 to about 50 microns, typically from about 0.5 to about 3 microns. In one embodiment, the method is conducted in a vapor coating container (76) having a hollow interior coating chamber, and includes the steps of loading the coating chamber with the component (30) to be coated; and flowing a tri-alkyl aluminum or chromium carbonyl coating gas (76) into the loaded coating chamber at a specified temperature, pressure, and time to deposit an aluminum or chromium coating on the surface of the component (30). The coated component (30) is then heated (74) in a nonoxidizing atmosphere to a specified temperature to form an aluminide or chromide coating on the surface. The coated component (30) is typically then heated or maintained at an elevated temperature in the presence of oxygen to form an oxide coating on the surface of the component (30).

Process for the production of sheathed or sheathed fibers

Process for making an evaporated film

Process for the low-temperature coating of a body with aluminum

Method for low temperature chemical vapor deposition of aluminides containing easily oxidized metals

A method is disclosed to deposit aluminum and a metal oxide on substrates for improved corrosion, oxidation, and erosion protection. Low temperature chemical vapor deposition is used. A homogeneous biphase coating may be deposited, as well as layers of aluminum and metal oxides.

High-strength heat-resistant fiber material

Method for chemical vapor deposition and apparatus therefor

Aluminum contact formation method

Chemical vapor deposition and sputtering method and apparatus

An apparatus (35) for depositing material on a substrate (20) by chemical vapor deposition and sputtering is described. The apparatus (35) comprises a deposition chamber (40) having a support (65) for supporting the substrate (20) in the chamber. A sputtering target (60) facing the substrate (20) in the chamber (40), has a sputtering surface comprising sputtering material. A plasma generator in the chamber (40) is used to generate a plasma from process gas introduced into the chamber. A gas distributor (55) is used to distribute process gas in the chamber (40), the process gas selected from the group consisting of (i) deposition gas capable of depositing a CVD layer on the substrate (20) by chemical vapor deposition, or (ii) sputtering gas capable of forming a plasma for sputtering the target (60) to deposit a sputtered layer on the substrate. Optionally, the apparatus (35) can also include a heater (80) for heating the substrate (20) to diffuse the CVD and sputtered layers into one another to form a substantially homogeneous diffusion mixture of the deposited and sputtered layers. The apparatus (35) is particularly useful for depositing multicomponent alloys on the substrate (20).

Formation method of aluminium film for wiring

用铝膜使空隙消失并且完全掩埋在层间绝缘膜等上形成的高长宽比的接触孔和通孔。在包括接触孔13内的绝缘膜12的表面上，形成相对于铝的化学气相淀积具有核形成作用的核形成层，接着，在包括接触孔13内壁的绝缘膜12的表面上，通过化学气相淀积形成比接触孔13的半径中最小半径薄的膜厚的铝膜15。随后，在铝膜15的表面被自然氧化膜覆盖前进行热处理，并进行铝的回流，以使接触孔13内部完全被铝膜15掩埋。

Method for producing oxide crystal thin film

Provided is a method for producing a thin film, whereby it becomes possible to achieve both the reduction in concentration of carbon impurities and a high film formation speed and it also becomes possible to produce different crystal structures in accordance with the intended use steadily. According to the present invention, a method for producing an oxide crystal thin film is provided, which comprises a step of supplying raw material microparticles into a film formation chamber by the action of a carrier gas to form an oxide crystal thin film on a film formation sample placed in the film formation chamber, wherein the raw material microparticles are produced by transforming a raw material solution, which is a solution comprising a gallium compound and/or an indium compound and water, into microparticles, and wherein the gallium compound and/or the indium compound is a bromide or an iodide.

Lithium alkyl aluminates as alkyl transfer reagents

The invention relates to lithium alkyl aluminates according to the general formula Li[AIR4] and to a method for preparing same, starting from LiAIH4 and RLi in an aprotic solvent. The invention also relates to compounds according to the general formula Li[AIR4] which can be obtained using the claimed method, and to the use thereof. The invention also relates to the use of a lithium alkyl aluminate Li[AIR4] as a transfer reagent for transferring at least one radical R to an element halide or metal halide and to a method for transferring at least one radical R to a compound E(X)q for preparing a compound according to the general formula E(X)q-pRp, where E = aluminium, gallium, indium, thallium, germanium, tin, lead, antimony, bismuth, zinc, cadmium, mercury, or phosphorus, X = halogen, q = 2, 3 or 4, and p = 1, 2, 3 or 4. The invention also relates to compounds which can be obtained using such a method, to the use thereof, and to a substrate which has an aluminium layer or a layer containing aluminium on one surface.

Process for the generation of metal-containing films

本發明屬於製備無機含金屬膜之方法之領域。該方法包含使固體基板與呈氣態之通式(I)、(II)、(III)或(IV)化合物接觸 其中A為NR 2 或OR，其中R為烷基、烯基、芳基或矽烷基，E為NR或O，n為0、1或2，m為0、1或2，且R'為氫、烷基、烯基、芳基或矽烷基。

A method for thin film vapor deposition of dialkyl amido dihydro aluminium compound

A method for the vapor deposition of aluminum films is provided. Such method employs a dialkyl amido dihydroaluminum compound of the formula [H 2 AlNR 1 R 2 ] n wherein R 1 and R 2 are the same or different alkyl groups having 1 to 3 carbons, and n is an integer of 2 or 3. The aluminum films may be thick or thin and may be aluminum films or may be mixed metal films with aluminum metal. Both CVD and ALD methods may be employed.

Method and apparatus for depositing highly oriented and reflective crystalline layers using a low temperature seeding layer

The present invention is to a chemical vapor deposition process for depositing a substantially planar, highly reflective layer on a substrate, and is particularly useful for filling high aspect ratio holes in the substrate with metal-containing material. The substrate is placed in a process zone, and successive seeding and oriented crystal growth stages are performed on the substrate. In the seeding stage, the substrate is heated to temperatures T s , within a first lower range of temperatures Δ T s , and a seeding gas is introduced into the process zone. The seeding gas deposits a substantially continuous, non-granular, and planar seeding layer on the substrate. Thereafter, in an oriented crystal growth stage, the substrate is maintained at deposition temperatures T d , within a second higher range of temperatures Δ T D , and deposition gas is introduced into the process zone. The deposition gas forms an oriented crystal growth layer on the seeding layer, the oriented crystal growth layer having a highly reflective surface that results from highly oriented, relatively large crystals that grow on the seeding layer.

Method for cleaning substrate and depositing protective coating

CVD apparatus and CVD method

The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

복수의 기판에 대하여, 원료 가스와 반응 가스를 교호적으로 공급하여 기판 상에 막을 형성하는 경우에 가스의 분해에 의해 원료 가스를 공급하는 노즐의 내벽에 퇴적물이 부착되는 것을 억제한다. 복수의 기판의 적재 영역에 대응하는 위치에 개구되는 복수의 가스 공급공을 포함하는 원료 가스 노즐로부터 원료 가스를 공급하는 원료 가스 공급 공정과, 반응 가스를 공급하는 반응 가스 공급 공정을 교호적으로 1회씩 수행하는 것을 1사이클로 하여 1 또는 복수 회 수행하고, 다음의(1) 내지 (4)의 조건을 만족시켜서 복수의 기판 상에 막을 형성하는 기술이 제공된다. (1) 각 사이클의 상기 원료 가스 공급 공정에서의 상기 원료 가스의 공급 시간: 20초 이하 (2) 상기 원료 가스 공급 공정에서의 상기 원료 가스 노즐 내의 상기 원료 가스의 압력: 50Pa 이하 (3) 상기 원료 가스 공급 공정에서의 상기 처리실 내의 온도: 500℃ 이하 (4) 상기 기판 상의 막의 형성을 위해서 연속해서 수행하는 사이클 수: 100회 이하 When a film is formed on a substrate by alternately supplying a source gas and a reactive gas to a plurality of substrates, deposits are suppressed from adhering to the inner wall of a nozzle to which the source gas is supplied by decomposition of the gas. A source gas supply step of supplying a source gas from a source gas nozzle including a plurality of gas supply holes opened at positions corresponding to the loading regions of the plurality of substrates, and a reaction gas supply step of supplying a reaction gas are alternately performed in one There is provided a technique for forming a film on a plurality of substrates by performing one or a plurality of times as one cycle, and satisfying the following conditions (1) to (4). (1) Supply time of the source gas in the source gas supply step of each cycle: 20 seconds or less (2) The pressure of the source gas in the source gas nozzle in the source gas supply step: 50 Pa or less (3) Temperature in the processing chamber in the source gas supply step: 500° C. or less (4) Number of cycles continuously performed for forming a film on the substrate: 100 times or less

Synthesis of aluminum compound for forming aluminum films by chemical vapor deposition

The present invention relates to synthesis method of a precursor compound to deposit aluminum films on the substrate by chemical vapor deposition, and it provides the synthesis method of a compound defined as Formula 1 below. H2AlBH4 :N (CH3) 3

METHOD FOR APPLYING A DRILL COAT TO A STEEL SUBSTRATE AND TOOL WITH A DRILL COAT.

Method of gas plating light metals

Chemical vapor deposition of aluminum films using dimethylethylamine alane

This invention provides essentially pure dimethylethylamine alane, which is useful for the chemical vapor deposition of thin films of aluminum.

Method of manufacturing aluminium-coated carbon fibre

1,255,658. Al-coated C fibre. ROLLS ROYCE Ltd. Aug. 18, 1969 [Aug. 3, 1968], No. 37139/68. Heading C7F. Tri-isobutyl aluminium vapour is brought into contact with the surface of a carbon fibre whose temperature is sufficient to decompose the vapour to produce a metallic deposit. The Al i-Bu 3 may be mixed with a carrier gas, e.g. pre-heated Ar/isobutylene, and the process may be carried out batchwise or continuously, the C fibres being heated either by conduction from the coating furnace walls or by radiant heat; suitable apparatuses are described. A filament-wound artefact may be produced by simultaneously coating the filament with Al and winding on to a mandrel; a continuous Al matrix reinforced with C fibre is thus produced.

Lithium alkyl aluminates, use of a lithium alkyl aluminate as a transfer reagent, method for transferring at least one remainder r, e(x)q-prp compounds and their use, substrate and method for producing lithium alkyl aluminates

Die Erfindung betrifft Lithiumalkylaluminate gemäß der allgemeinen Formel Li[AlR₄] sowie ein Verfahren zu deren Herstellung, ausgehend von LiAlH₄und RLi in einem aprotischen Lösungsmittel. Gegenstand der Erfindung sind zudem Verbindungen gemäß der allgemeinen Formel Li[AlR₄], erhältlich nach dem beanspruchten Verfahren, sowie deren Verwendung. Die Erfindung betrifft weiterhin die Verwendung eines Lithiumalkylaluminats Li[AlR₄] als Transferreagenz zur Übertragung wenigstens eines Restes R auf ein Element- oder Metallhalogenid sowie ein Verfahren zur Übertragung wenigstens eines Restes R auf eine Verbindung E(X)_qzur Herstellung einer Verbindung gemäß der allgemeinen Formel E(X)_q-pR_p. Dabei ist E = Aluminium, Gallium, Indium, Thallium, Germanium, Zinn, Blei, Antimon, Bismut, Zink, Cadmium, Quecksilber oder Phosphor, X = Halogen, q = 2, 3 oder 4 und p = 1, 2, 3 oder 4. Zudem betrifft die Erfindung Verbindungen, erhältlich nach einem solchen Verfahren, deren Verwendung und ein Substrat, welches auf einer Oberfläche eine Aluminium-Schicht oder eine Aluminium enthaltende Schicht aufweist. The invention relates to lithium alkyl aluminates according to the general formula Li [AlR ₄] and to a process for their preparation, starting from LiAlH ₄ and RLi in an aprotic solvent. The invention also relates to compounds of the general formula Li [AlR ₄], obtainable by the claimed process, and to their use. The invention further relates to the use of a lithium alkylaluminate Li [AlR ₄] as a transfer reagent for transferring at least one radical R to an element or metal halide and to a method for transferring at least one radical R to a compound E (X) _q for the preparation of a compound according to the ...

Metal alloy plating process

Compound for forming A102 film by using chemical steam deposition and method for preparing said compound

本发明涉及用于由化学蒸汽沉积形成铝膜的有机金属化合物,本发明还涉及这些有机金属化合物的制备方法和形成铝膜的方法。

Apparatus for treating a gas stream

In a method of inhibiting the deposition of aluminium within a vacuum pump during the pumping from a process chamber of a gas stream containing an organoaluminium precursor, chlorine is supplied to the gas stream upstream of the vacuum pump to react with the precursor to form aluminium chloride, which can pass harmlessly through the pump in its vapour phase.

Method for depositing a metal film containing aluminium by use of alkylaluminium halide

This invention provides a method of forming a deposition film serving as a high-quality wiring layer having good stress migration durability against any material such as a non-monocrystalline material. A substrate is located in a deposition film formation space, a gas of an alkylaluminum halide is supplied to the deposition film formation space, and an aluminum film is selectively formed on an electron donor surface at a partial pressure of the alkylaluminum halide of 7 x 10⁻³ Torr to 9 x 10⁻² Torr in the range of a decomposition temperature or more of the alkylaluminum halide and 450°C or less. When deposition is to be performed on the non-monocrystalline material, a chemical treatment for terminating with hydrogen atoms a non-electron donor surface of a substrate having the electron donor surface and the non-electron donor surface is performed, and the deposition film is deposited by a non-selective deposition method.

High-strength refractory fibrous materials

【課題】開示の材料、方法、および機器は、繊維形態／構造の新たな超高温材料（UHTM）を提供する。【解決手段】本発明では、UHTM材料の少なくとも4つのクラスが開示される：（1）炭素、ドープ化炭素、および炭素合金材料、（2）ホウ素-炭素-窒化物-X系の材料、（3）ケイ素-炭素-窒化物-X系の材料、（4）タンタル-ハフニウム-炭素-窒化物-X系、およびタンタル-ハフニウム-炭素-ホウ素-窒化物-X系の高耐熱材料。これらの全ての材料クラスは、1800℃を超える温度で溶融しまたは昇華する、化合物／混合物を提供し、ある場合には、既知の最も融点の高い材料（3000℃を超える）に属する。多くの実施例において、1または2以上の低モル質量前駆体と、1または2以上の高モル質量前駆体とを用いて、気体、液体、半固体、臨界もしくは超臨界前駆体流体混合物から、合成／製造が行われる。【選択図】なし

Compositions for depositing material, synthesis methods and uses

本揭露係關於一種用於將含第13族金屬的材料沉積在一基材上之組成物。該組成物包含一金屬烷基前驅物，其中該金屬烷基前驅物包含一第13族金屬原子及兩個不同烷基配位子類型。第一配位子類型係一通過一碳原子而鍵結至該第13族金屬原子的支鏈C4至C8烷基，該碳原子係鍵結至三個碳原子，且第二配位子類型係一直鏈C1至C4烷基。該第13族金屬原子係鍵結至該第一配位子類型之兩個配位子，且該組成物中第一配位子類型對第二配位子類型之比率係約二比一。進一步地，本揭露係關於組成物之製造方法及其用途，以及將材料沉積在基材上之方法。

Organometallic Precursor, Method of Forming a Thin Film using the Organometallic Precursor and Method of Manufacturing a Metal Wiring

반도체 장치의 제조에 이용될 수 있는 유기 금속 전구체, 이를 이용한 박막의 형성 방법 및 금속 배선의 제조 방법에 있어서, 중심 금속과 이에 배위하는 보로하이드라이드 및 분극성 감소 아민계 리간드를 포함하는 유기 금속 전구체를 기판 상에 제공한 다음, 유기 금속 전구체를 분해하여 기판 상에 박막을 형성한다. 유기 금속 전구체는 분극성 감소 아민계 리간드를 포함하고 있어서 일정한 유입 속도로 챔버에 공급될 수 있다. 이에 따라 반도체 장치 제조 공정의 안정성과 효율을 개선할 수 있다. An organometallic precursor that can be used in the manufacture of a semiconductor device, a method for forming a thin film using the same, and a method for producing a metal wiring, comprising: an organometallic precursor including a central metal, a borohydride and a polarization-reducing amine ligand coordinated thereto Is provided on the substrate, and then the organic metal precursor is decomposed to form a thin film on the substrate. The organometallic precursor includes a polarization reducing amine based ligand so that it can be supplied to the chamber at a constant inflow rate. Accordingly, the stability and efficiency of the semiconductor device manufacturing process can be improved.

Metallizing semiconductor devices

Silicon semiconductor devices, e.g. integrated circuits are metallized with a silicon/aluminum alloy by exposure to silane and an aluminum alkyl vapour at an elevated temperature and reduced pressure. The process eliminates the prior hydrogen plasma treatment and subsequent annealing of conventional vacuum deposition of aluminum and provides good step and crack coverage.

Semiconductor device

Aluminum contact structure for integrated circuits

A method for forming an aluminum contact through an insulating layer includes the formation of an opening. A barrier layer is formed, if necessary, over the insulating layer and in the opening. A thin refractory metal layer is then formed over the barrier layer, and aluminum deposited over the refractory metal layer. Proper selection of the refractory metal layer and aluminum deposition conditions allows the aluminum to flow into the contact and completely fill it. Preferably, the aluminum is deposited over the refractory metal layer without breaking vacuum.

Organic aluminum precursor and method of manufacturing a metal wire using the same

An organic aluminum precursor and a method for manufacturing a metal wire using the same are provided to form an aluminum line having high electrical conductivity, a uniform surface, and prominent step coverage by minimizing generation of particles. An aluminum layer is formed on a substrate(100). A first interlayer dielectric pattern(110) is formed to expose an upper surface of a contact(105) connected with the substrate. A second interlayer dielectric pattern(120) having an aperture is formed on the first interlayer dielectric pattern. A barrier metal layer(130) is formed on the second interlayer dielectric pattern. A first aluminum layer(140) is formed on the barrier metal layer. A second aluminum layer(150) is formed thereon.

Method for producing metal-containing film

本发明属于制备无机含金属膜的方法的领域。该方法包括使固体基材与呈气态的通式(I)、(II)、(III)或(IV)化合物接触，其中A为NR 2 或OR，其中R为烷基、链烯基、芳基或甲硅烷基，E为NR或O，n为0、1或2，m为0、1或2，且R'为氢、烷基、链烯基、芳基或甲硅烷基。

Nanomatrix powder metal composite

公开了粉末金属复合材料。该粉末金属复合材料包括包含纳米基体材料的基本连续的蜂窝状纳米基体。该压块还包括分散在该纳米基体中的多个包含颗粒芯部材料的分散颗粒以及在所述分散颗粒之间在整个纳米基体中延伸的接合层，所述颗粒芯部材料包含Mg、Al、Zn或Mn或其组合，所述分散颗粒的芯部材料包含多个分布的碳纳米颗粒。该纳米基体粉末金属复合材料是独特的轻重量高强度材料，还可以提供独特地可选且可控的腐蚀性质，包括非常快的腐蚀速率，可用于制造多种可降解或可处置制品，包括各种井下工具和部件。

Patent JPS641550B2

Isopropanol catalyst for copper chemical vapor deposition

An alcohol having an alpha hydrogen with the remaining groupings attached to the carbon atom being either hydrogen or an alkyl group having from 1 to 5 carbon atoms, preferably isopropanol, is added to the flow stream of a copper chelate gas, preferably a copper diketonate, the copper diketonate preferably being Cu(hfac) 2 or a composition identical thereto wherein one or more of the fluorine atoms is replaced by one of hydrogen atoms, and alkyl group having from one to five carbon atoms and a gas, preferably a reducing agent, preferably hydrogen. As a second embodiment, some or all of the copper can be replaced by aluminum to provide either Al(hfac) 3 or a combination of Cu(hfac) 2 and Al(hfac) 3 . While the flow rates of each of the components is not critical and will vary with materials used and conditions, a flow rate for the reducing agent of from about 15 to about 60 SCCM and preferably 20 SCCM is appropriate with the amount of alcohol and metal chelate entering the flow stream being determined by the vapor pressure of the material involved. The flow stream enters as standard CVD reactor wherein the sample to be coated with copper is heated, thereby causing the copper to be deposited only on the heated area. The other reaction products are gaseous and are removed from the reactor by means of a pump or the like as is well known.

Synthesis of aluminum compound for forming aluminum films by chemical vapor deposition

A method for synthesis of an aluminum precursor compound for forming aluminum films on a substrate by chemical vapor deposition is provided to reduce flammability by increasing volatility, improve thermal stability, and enhance regulation of precursor transportation speed by reducing viscosity. A trimethylamine alane borane represented by the formula(1): H2AlBH4:N(CH3)3 as the aluminum precursor compound is prepared by reacting chloroalane compound represented by the formula(2): C1H2Al:N(CH3)3 which is prepared by reacting lithium aluminum hydride(LiAlH4), trichloroaluminum(AlCl3) and trimethylamine with lithium boron hydride(LiBH4) or sodium boron hydride(NaBH4) in benzene, diethylether or a mixed solvent of diethylether and hexane.

PRODUCTION PROCESS OF A DEPOSITED ALUMINUM FILM

Plasma enhanced atomic layer deposition system and method

Process of growing conductive layer from gas phase

A process of growing a conductive layer on a substrate by a chemical reaction of a source gas on the substrate includes preparing a substrate having an area covered with a coating layer of a material different from a material of the substrate and an area not covered with the coating layer; supplying a first source gas onto the substrate and causing a chemical reaction of the first source gas to occur on the substrate only in the area not covered with the coating layer, thereby selectively growing a first conductive layer on the substrate only in the area not covered with the coating layer; terminating the supplying of the first source gas; and supplying a second source gas onto the substrate and causing a chemical reaction of the second source gas to occur on both of the first conductive layer and the coating layer, thereby unselective growing a second conductive layer of the same conductive material as the first conductive layer, on both of the first conductive layer and the coating layer. A chemical vapor deposition process for growing a conductive layer, includes maintaining, in a container, an amount of a source liquid containing at least one of constituent elements of the conductive layer; introducing the source liquid from the container and a heated carrier gas into a vaporizer vaporizing the source liquid by heating to generate a source gas in the vaporizer; and supplying from the vaporizer the source gas together with the heated carrier gas immediately into a reactor for chemical vapor deposition.

Methods and apparatus for metal fill in metal gate stack

A method of filling a feature in a semiconductor structure includes forming a barrier layer in the feature by one of atomic layer deposition (ALD), chemical vapor deposition (CVD), or physical vapor deposition (PVD); wherein the barrier layer is one of cobalt (Co), molybdenum (Mo), molybdenum nitride (MoN) plus Mo, titanium (Ti), titanium aluminum carbide (TiAlC), or titanium nitride (TiN); and forming a metal layer in the feature and over the barrier layer by one of ALD or CVD; wherein the metal layer is one of aluminum (Al), Co, Mo, ruthenium (Ru), or tungsten (W).

Deposition of aluminum

Metallization of substrate (s) by a liquid/vapor deposition process

Packaging structure, electronic device and packaging method

一种封装结构、电子装置以及封装方法，该封装结构包括无机层、铝碳层和有机层。铝碳层位于所述无机层上且与所述无机层接触；有机层位于所述铝碳层上且与所述铝碳层接触。在该封装结构中，铝碳层能够提高无机层和有机层之间的结合强度，防止封装结构发生分层翘曲，并且，无机层能够更好地通过铝碳层和有机层释放其由于弯曲变形所产生的应力，从而改善或防止无机层产生裂隙，达到更好的封装效果。