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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 4365. Отображено 100.

08-03-2012 дата публикации

Polycrystalline diamond element

Номер: US20120055717A1

Автор: Bronwyn Annette Kaiser, Danny Eugene Scott, Humphrey Samkelo Lungisani Sithebe, John Hewitt Liversage, Kaveshini Naidoo, Michael Lester Fish

Принадлежит: Individual

An embodiment of a PCD insert comprises an embodiment of a PCD element joined to a cemented carbide substrate at an interface. The PCD element has internal diamond surfaces defining interstices between them. The PCD element comprises a masked or passivated region and an unmasked or unpassivated region, the unmasked or unpassivated region defining a boundary with the substrate, the boundary being the interface. At least some of the internal diamond surfaces of the masked or passivated region contact a mask or passivation medium, and some or ail of the interstices of the masked or passivated region and of the unmasked or unpassivated region are at least partially filled with an infiltrant material.

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Номер записи: 1

13-09-2012 дата публикации

Novel Etching Composition

Номер: US20120231632A1

Автор: Atsushi Mizutani, Bing Du, Kazutaka Takahashi, Tadashi Inaba, Tetsuya Kamimura, Tomonori Takahashi, William A. Wojtczak

Принадлежит: Fujifilm Corp, Fujifilm Electronic Materials USA Inc

This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.

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Номер записи: 2

27-09-2012 дата публикации

Application of treatment fluids to components

Номер: US20120241008A1

Автор: Daniel Clark, David W. Mills

Принадлежит: Rolls Royce PLC

A device for applying a treatment fluid to a target includes an application chamber that defines a substantially laminar application flow path from an inflow region to an outflow region of the application chamber; and a distribution chamber that communicates with the application chamber at an interface, in use, fluid being delivered from the distribution chamber to the application chamber via the interface across the full extent of the inflow region of the application chamber. A process for applying treatment fluid to a target region of a component surface using a treatment device operable to present the treatment fluid to the component surface is also disclosed. The process comprises introducing the treatment device to the target region of the component surface, and drawing treatment fluid through the device, across the target region of the component surface solely under the action of reduced pressure applied at an outlet of the device.

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Номер записи: 3

25-10-2012 дата публикации

Electrolyte Solution and Electropolishing Methods

Номер: US20120267254A1

Автор: James L. Clasquin, Thomas J. Christensen

Принадлежит: MetCon LLC

An aqueous electrolyte solution including a concentration of citric acid in the range of about 1.6 g/L to about 982 g/L and an effective concentration of ammonium bifluoride (ABF), and being substantially free of a strong acid. Methods of micropolishing a surface of a non-ferrous metal workpiece including exposing the surface to a bath of an aqueous electrolyte solution including a concentration of citric acid in the range of about 1.6 g/L to about 780 g/L and a concentration of ammonium bifluoride in the range of about 2 g/L to about 120 g/L and having no more than about 3.35 g/L of a strong acid, controlling the temperature of the bath to be between the freezing point and the boiling point of the solution, connecting the workpiece to an anodic electrode of a DC power supply and immersing a cathodic electrode of the DC power supply in the bath, and applying a current across the bath.

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Номер записи: 4

03-01-2013 дата публикации

Method of forming circuit on flexible laminate substrate

Номер: US20130001186A1

Автор: Hajime Inazumi, Kazuhiko Sakaguchi

Принадлежит: JX Nippon Mining and Metals Corp

Disclosed is a method of forming a circuit on a flexible laminate substrate. When forming a circuit using an adhesiveless flexible laminate which includes a polyimide film as the flexible laminate substrate in which at least one surface thereof is subject to plasma treatment, a tie-coat layer A formed on the polyimide film, a metal conductor layer B formed on the tie-coat layer, and a layer C which has the same components as the tie-coat layer that was formed on the metal conductor layer, the following method is used. The photoresist is coated on the layer C which has the same components as the tie-coat layer that was formed on the metal conductor layer, the photoresist is exposed and developed, the layer C other than the circuit forming parts thereof is selectively removed in advance via pre-etching, the conductor layer B is thereafter removed by supplemental etching with leaving the circuit portion, and the photoresist of the circuit portion is further removed so as to form the circuit. By forming a tie-coat layer or a metal or alloy that is equivalent to the tie-coat layer on the metal conductor layer of the adhesiveless flexible laminate, simultaneously achieved are the inhibition of side etching, which interferes with the achievement of finer pitches of circuit wiring, and the improvement of linearity of the wiring.

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Номер записи: 5

14-02-2013 дата публикации

Methods and apparatus for cleaning deposition chamber parts using selective spray etch

Номер: US20130037062A1

Автор: Anbei Jiang, Liyuan Bao, Smantha S.H. Tan

Принадлежит: QUANTUM GLOBAL TECHNOLOGIES LLC

In one aspect, a method of cleaning an electronic device manufacturing process chamber part is provided, including a) spraying the part with an acid; b) spraying the part with DI water; and c) treating the part with potassium hydroxide. Other aspects are provided.

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Номер записи: 6

28-02-2013 дата публикации

Etching liquid for a copper/titanium multilayer thin film

Номер: US20130048904A1

Автор: Kazuki Kobayashi, Keiichi Tanaka, Kenichi Kitoh, Satoshi Okabe, Taketo Maruyama, Tetsunori Tanaka, Tomoyuki Adaniya, Toshiyuki Gotou, Wataru Nakamura

Принадлежит: Mitsubishi Gas Chemical Co Inc, Sharp Corp

The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

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Номер записи: 7

06-06-2013 дата публикации

SLURRY FOR CHEMICAL MECHANICAL POLISHING OF COBALT

Номер: US20130140273A1

Автор: Lu Haisheng, Qu Xinping, Wang Jingxuan

Принадлежит:

A slurry for chemical mechanical polishing of Co. The slurry comprises components by weight as follows, Inhibitor 0.01-2%, Oxidant 0-5%, Abrasive 0.1-10%, Complexing agent 0.001-10%, and the rest of water. The pH value of the slurries is adjusted to 3-5 by a pH value adjustor. The inhibitor is chosen from one or more kinds of five-membered heterocycle compound containing S and N atoms or containing S or N atom. The oxidant is one or more chosen from HO, (NH)SO, KIO, and KClO. The abrasive is one or more chosen from SiO, CeO, and AlO. The complexing agent is one or more chosen from amino acid and citric acid. The slurry can effectively prevent Co over corrosion and reduce the polishing rate of Co in the polishing process. 1. A slurry for chemical mechanical polishing of Co , comprises components by weight as follows , inhibitor 0.01-2% , oxidant 0-5% , abrasive 0.1-10% , complexing agent 0.001-10% , and the rest of water; the pH value of the slurry is adjusted to 3-5 by pH value adjustor;said inhibitor is chosen from one or more kinds of five-membered heterocycle compound containing S and N atoms or containing S or N atom;{'sub': 2', '2', '4', '2', '2', '8', '4', '5, 'said oxidant is chosen one or more from HO, (NH)SO, KIO, KClO;'}{'sub': 2', '2', '2', '3, 'said abrasive is chosen one or more from SiO, CeO, and AlO;'}said complexing agent is chosen one or more from amino acid and citric acid.2. The slurry for chemical mechanical polishing of Co of claim 1 , wherein said slurry comprises components by weight as follows claim 1 , inhibitor 0.01-1% claim 1 , oxidant 0.5-2% claim 1 , abrasive 1-5% claim 1 , complexing agent 0.4% claim 1 , and the rest of water.3. The slurry for chemical mechanical polishing of Co of or claim 1 , wherein said five-membered heterocycle compound chosen as inhibitor has two heteroatoms in ring.4. The slurry for chemical mechanical polishing of Co of claim 3 , wherein said inhibitor is chosen one or more from Benzotriazole claim 3 , 2- ...

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Номер записи: 8

20-06-2013 дата публикации

Method and Composition for Chemical Mechanical Planarization of a Metal-Containing Substrate

Номер: US20130153820A1

Автор: Shi Xiaobo

Принадлежит: AIR PRODUCTS AND CHEMICALS, INC.

A composition and associated method for chemical mechanical planarization of a metal-containing substrate afford low dishing levels in the polished substrate while simultaneously affording high metal removal rates. Suitable metal-containing substrates include tungsten- and copper-containing substrates. Components in the composition include a silatrane compound, an abrasive, and, optionally, a strong oxidizing agent, such as a per-compound. 19-. (canceled)10. A polishing composition comprising:a) an abrasive;b) a silatrane compound comprising a polycyclic compound and having at least one silicon atom present in a first bridgehead position and having at least one nitrogen atom present in a second bridgehead position; andc) an oxidizing agent.12. The composition of wherein X is selected from the group consisting of C-C-alkyl claim 11 , C-C-alkoxy claim 11 , C-C-amino claim 11 , C-C-amino-alcohol claim 11 , C-C-carboxylic acid claim 11 , and C-C-glycol.15. The composition of wherein the polishing composition has a pH from about 1 to about 5.16. The composition of wherein the oxidizing agent is hydrogen peroxide. The present application claims the benefit of U.S. Provisional Patent Application Ser. No. 61/245,312 filed 09/24/2009.This invention relates generally to the chemical-mechanical planarization (CMP) of metal-containing substrates (e.g., tungsten) on semiconductor wafers and slurry compositions therefor. This invention is especially useful for tungsten CMP where low dishing/plug recess on planarized substrates is desired.Chemical mechanical planarization (chemical mechanical polishing, CMP) for planarization of semiconductor substrates is now widely known to those skilled in the art and has been described in numerous patents and open literature publications. An introductory reference on CMP is as follows: “Chemical-Mechanical Polish” by G. B. Shinn et al., Chapter 15, pages 415-460, in Handbook of Semiconductor Manufacturing Technology, editors: Y. Nishi and R. ...

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Номер записи: 9

11-07-2013 дата публикации

Method of forming a metal pattern and method of manufacturing a display substrate

Номер: US20130178010A1

Автор: Bong-Kyun Kim, Hong-Sick Park, Shin Il Choi, Wang-Woo LEE, Young-woo Park

Принадлежит: Samsung Display Co Ltd

A method of forming a metal pattern is provided. In the method, a first titanium layer, a copper layer and a second titanium layer are sequentially formed on a substrate. A photo pattern is formed on the second titanium layer. The first titanium layer, the copper layer and the second titanium layer are patterned using the photo pattern to form a first titanium pattern, a copper pattern formed on the first titanium pattern and a second titanium pattern formed on the copper pattern. Therefore, a fine metal pattern may be formed.

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Номер записи: 10

19-09-2013 дата публикации

Test piece and manufacturing method thereof

Номер: US20130240255A1

Автор: Yu-Lin Lin

Принадлежит: Individual

Disclosed are a test piece and the manufacturing method thereof The test piece includes an insulating substrate and a circuit pattern structure formed on the insulating substrate, wherein circuit pattern structure includes a first metal pattern layer, a second metal pattern layer, a third metal pattern layer, a fourth metal pattern layer, and a fifth metal pattern layer. The first metal pattern layer, the second metal pattern layer, the third metal pattern layer, the fourth metal pattern layer, and the fifth metal pattern layer have same pattern shapes and positions thereof are overlapping in a plane. The first metal pattern layer and the second metal pattern layer are nano-metal films formed by vacuum coating, therefore, the test piece has excellent uniformity of film and low resistance to provide a stable test current to prevent the judging mistakes and to improve the test efficiency.

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Номер записи: 11

24-10-2013 дата публикации

ETCHING AGENT FOR ALUMINUM OR ALUMINUM ALLOY

Номер: US20130277602A1

Автор: Kazuhiko Mori, Takakuwa Hideki, Yorozu Takayuki

Принадлежит:

A composition of an etching agent for aluminum or aluminum alloy and a treatment method thereof are provided. The etching agent does not contain a component not suitable for a wastewater treatment, such as boron and fluorine, and has stable etching performance even when performing an etching treatment continuously. The etching agent has excellent aging resistance providing good etching uniformity and corrosion resistance after etching. This etching agent is an etching agent for aluminum or aluminum alloy, including 50 parts by mass of an aminocarboxylic acid, 5 to 300 parts by mass of at least one selected from a hydroxycarboxylic acid, a dicarboxylic acid, a polycarboxylic acid, and salts thereof, and 10 to 800 parts by mass of at least one selected from a hydroxide, a carbonate, and a bicarbonate of an alkali metal, wherein an aqueous solution of the etching agent has a pH of 8 to 10. 1. An etching agent for aluminum or aluminum alloy , comprising:A) 50 parts by mass of an aminocarboxylic acid;B) 5 to 300 parts by mass of at least one selected from a hydroxycarboxylic acid, a dicarboxylic acid, a polycarboxylic acid, and salts thereof; andC) 10 to 800 parts by mass of at least one selected from a hydroxide, a carbonate, and a bicarbonate of an alkali metal.2. The etching agent for aluminum or aluminum alloy according to claim 1 , wherein the aminocarboxylic acid is an α-amino acid.3. The etching agent for aluminum or aluminum alloy according to claim 1 , wherein the alkali metal of C) is lithium.4. The etching agent for aluminum or aluminum alloy according to claim 1 , further comprising at least one of polyvinylamine claim 1 , polyallylamine claim 1 , polyethyleneimine claim 1 , and derivatives thereof.5. The etching agent for aluminum or aluminum alloy according to claim 1 , further comprising crystalline aluminum hydroxide particles.6. The etching agent for aluminum or aluminum alloy according to claim 1 , further comprising a surfactant.7. An aqueous etching ...

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Номер записи: 12

14-11-2013 дата публикации

METHOD OF REMOVING WORK-AFFECTED LAYER

Номер: US20130299456A1

Автор: KAMIOKA Taisuke

Принадлежит: MITSUBISHI HEAVY INDUSTRIES, LTD.

Disclosed is a method of removing a work-affected layer formed on the worked surface of a TiAl-based alloy (base material) by machining work, without exerting any adverse effect on the base material. The method of removing a work-affected layer includes a step of dipping a TiAl-based alloy, having a work-affected layer formed on the surface thereof by machining, in an etchant containing predetermined concentrations of hydrofluoric acid and nitric acid, wherein within the etchant, the concentration of the hydrofluoric acid is not less than 5 g/L and not more than 56 g/L, and the concentration of the nitric acid is selected from within a range from not less than 50 g/L to not more than 260 g/L in accordance with a combination of the concentration of the hydrofluoric acid within the etchant and the etching treatment temperature. 1. A method of removing a work-affected layer , the method comprising:a step of dipping a TiAl-based alloy, having a work-affected layer formed on a surface thereof by machining, in an etchant comprising predetermined concentrations of hydrofluoric acid and nitric acid, wherein within the etchant,a concentration of the hydrofluoric acid is not less than 5 g/L and not more than 56 g/L, anda concentration of the nitric acid is selected from within a range from not less than 50 g/L to not more than 260 g/L in accordance with a combination of a concentration of the hydrofluoric acid within the etchant and an etching treatment temperature.2. The method of removing a work-affected layer according to claim 1 , wherein phosphoric acid is also added to the etchant. The present invention relates to a method of removing a work-affected layer, and relates particularly to a method of removing a work-effected layer formed on the surface of a TiAl-based alloy by machining work.Conventionally, Ni-based alloys have been used as the base material for aircraft engine blades, but in recent years, the use of TiAl-based alloys, which exhibit high specific strength, ...

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Номер записи: 13

19-12-2013 дата публикации

Methods and Compositions for Acid Treatment of a Metal Surface

Номер: US20130334173A1

Автор: Basaly Mores

Принадлежит: Houghton Technical Corp.

The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning. 1. A method of etching aluminum , said method comprising contacting said aluminum with a composition consisting essentially of:(a) about 20 to about 80 grams per liter of ammonium bifluoride;(b) a surfactant; and(c) water.2. The method according to claim 1 , wherein said etching is performed at a temperature of about 100 to about 125° F.3. The method according to claim 1 , wherein said etching is performed at a temperature of about 115° F.4. The method according to claim 1 , wherein said etching is performed without bath cooling.5. The method according to claim 1 , wherein said etching is performed in about 0.5 to about 10 minutes.6. The method according to claim 5 , wherein said etching is performed in about 1 to about 3 minutes.7. The method according to claim 1 , wherein said etching is performed at a pH of about 2 to about 5.8. The method according to claim 1 , further comprising rinsing the etched aluminum.9. The method according to claim 1 , wherein said aluminum is an aluminum alloy.10. The method according to claim 1 , wherein the etched aluminum is resistant to pitting.11. The method according to claim 1 , wherein the etched aluminum has a uniform matte finish when analyzed using a reflectometer at a 60° angle.12. The method according to claim 1 , wherein extrusion lines on said etched aluminum are removed or minimized13. The method according to claim 1 , which results in a significant reduction of waste products from the aluminum etching process.14. The method according to ...

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Номер записи: 14

02-01-2014 дата публикации

MANUFACTURING METHOD OF MAGNETIC DISK SUBSTRATE

Номер: US20140001155A1

Автор: Hamaguchi Takeshi

Принадлежит: KAO CORPORATION

A magnetic disk substrate production method by which the embedded alumina and the waviness of the substrate surface can be reduced is provided. The magnetic disk substrate production method includes the steps of (1) polishing a polishing surface of a substrate to be polished using a polishing liquid composition A containing alumina particles and water; (2) polishing the polishing surface of the substrate obtained in the step (1) using a polishing liquid composition B containing water and silica particles having an average primary particle size (D50) of 40 to 110 nm and a primary particle size standard deviation of 40 to 60 nm; (3) cleaning the substrate obtained in the step (2); and (4) polishing the polishing surface of the substrate obtained in the step (3) using a polishing liquid composition C containing silica particles and water. 19.-. (canceled)10. A method for producing a magnetic disk substrate , the method comprising the steps of:(1) supplying a polishing liquid composition A containing alumina particles and water to a polishing surface of a substrate to be polished, and polishing the polishing surface by bringing a polishing pad into contact with the polishing surface and moving the polishing pad and/or the substrate to be polished;(2) supplying to the polishing surface of the substrate obtained in the step (1) a polishing liquid composition B containing water and silica particles having an average primary particle size (D50) of 40 to 110 nm and a primary particle size standard deviation of 40 to 60 nm, and polishing the polishing surface by bringing a polishing pad into contact with the polishing surface and moving the polishing pad and/or the substrate to be polished;(3) cleaning the substrate obtained in the step (2); and(4) supplying a polishing liquid composition C containing silica particles and water to the polishing surface of the substrate obtained in the step (3), and polishing the polishing surface by bringing a polishing pad into contact with ...

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Номер записи: 15

09-01-2014 дата публикации

Metal wire etchant and method of forming metal wire using the same

Номер: US20140011352A1

Автор: Gyu-Po Kim, Hong Sick Park, Hyun-Cheol Shin, In-Bae Kim, Jae Woo Jeong, Jong-Hyun Choung, Ki-Beom Lee, Sam-Young Cho, Seon-Il Kim, Seung-Yeon HAN, Won-Guk SEO

Принадлежит: Samsung Display Co Ltd

A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.

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Номер записи: 16

13-03-2014 дата публикации

Etching Composition

Номер: US20140073140A1

Автор: MIZUTANI Atsushi, Takahashi Kazutaka, Takahashi Tomonori

Принадлежит:

This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water. 1. An etching composition , comprising:about 60% to about 95% of at least one sulfonic acid;about 0.005% to about 0.04% of chloride anion;about 0.03% to about 0.27% of bromide anion;about 0.1% to about 20% of nitrate or nitrosyl ion; andabout 3% to about 37% of water.2. The composition of claim 1 , wherein the at least one sulfonic acid comprises a compound of formula (1):{'br': None, 'sup': '1', 'sub': '3', 'RSOH\u2003\u2003(1),'}{'sup': '1', 'sub': 1', '12', '3', '12', '1', '12', '3', '12, 'in which Ris substituted or unsubstituted C-Clinear or branched alkyl, substituted or unsubstituted C-Ccyclic alkyl, C-Clinear or branched fluoroalkyl ether, or C-Ccyclic fluoroalkyl ether.'}3. The composition of claim 2 , wherein Ris C-Clinear or branched alkyl or C-Ccyclic alkyl claim 2 , each of which is optionally substituted with halogen claim 2 , C-Calkyl claim 2 , sulfonic acid claim 2 , or phenyl optionally substituted with C-Calkyl or hydroxy.4. The composition of claim 3 , wherein the at least one sulfonic acid is methanesulfonic acid.6. The composition of claim 5 , wherein each of R claim 5 , R claim 5 , and R claim 5 , independently claim 5 , is C-Calkyl claim 5 , C claim 5 , NO claim 5 , OH claim 5 , F claim 5 , or COH; and n is 0 or 1.7. The composition of claim 1 , wherein the at least one sulfonic acid comprises a naphthalenesulfonic acid or anthracenesulfonic acid claim 1 , each of which is optionally substituted with C-Clinear or branched alkyl or SOH.8. The composition of claim 1 , wherein the composition comprises a first sulfonic acid and a second sulfonic acid.9. The composition of claim 8 , wherein the first sulfonic acid comprises a compound of formula (1):{'br': ...

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Номер записи: 17

04-01-2018 дата публикации

Methods and Compositions for Acid Treatment of a Metal Surface

Номер: US20180002818A1

Автор: Basaly Mores

Принадлежит:

The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning. 1. (canceled)2. A composition consisting essentially of:(a) one or more fluoride ion compounds; and(b) one or more grain refiners.3. The composition according to claim 2 , consisting essentially of ammonium bifluoride and diammonium phosphate.4. The composition according to claim 2 , consisting essentially of ammonium bifluoride and a mixture of ammonium phosphate and diammonium phosphate.5. A composition consisting essentially of:(a) about 20 to about 80 grams per liter of ammonium bifluoride; and(b) about 1 to about 50 grams per liter of diammonium phosphate or a mixture of ammonium phosphate and diammonium phosphate.6. The composition according to claim 5 , which has a pH of about 2 to about 5.7. The composition according to claim 5 , consisting essentially of about 5 to about 30 grams per liter of diammonium phosphate or a mixture of ammonium phosphate and diammonium phosphate.8. The composition according to claim 7 , consisting essentially of about 10 to about 20 grams per liter of diammonium phosphate or a mixture of ammonium phosphate and diammonium phosphate.9. The composition according to claim 5 , consisting essentially of about 60 to 70 grams per liter of ammonium bifluoride.10. The composition according to claim 5 , consisting essentially of:(a) about 20 to about 80 grams per liter of ammonium bifluoride; and(b) about 1 to about 50 grams per liter of diammonium phosphate.11. The composition according to claim 10 , which has a pH of about 2 to about 5.12. The composition ...

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Номер записи: 18

05-01-2017 дата публикации

THIN FILM TYPE COIL COMPONENT AND METHOD OF MANUFACTURING THE SAME

Номер: US20170004917A1

Автор: Choi Jae Yeol, LIM Jong Bong, YANG Ju Hwan, YOO Young Seuck

Принадлежит:

A thin film type coil component including coil patterns in a cross section shape having an undercut in lower portions thereof is provided. The coil patterns may reduce parasitic capacitance between the coil patterns, thereby minimizing electrical loss. The volume of the coil patterns may be increased, thereby improving inductance and resistance characteristics. 1. A thin film type coil component comprising:a substrate; anda coil including a plurality of coil patterns disposed on the substrate,wherein a cross-section of each coil pattern has a shape that a width of at least one region among inner regions located between upper and lower cross sections is greater than widths of the upper and lower cross sections.21212. The thin film type coil component of claim 1 , wherein the cross section of each coil pattern satisfies H>H claim 1 , in which H is a height from the upper cross section of the coil pattern to the at least one region and H is a height from the lower cross section thereof to the at least one region.3. The thin film type coil component of claim 1 , wherein an interval between adjacent coil patterns is in the range from about 0.15 to about 0.45 times the width of the at least one region.4. The thin film type coil component of claim 1 , wherein the plurality of coil patterns are made of at least one of gold claim 1 , silver claim 1 , platinum claim 1 , copper claim 1 , nickel claim 1 , and palladium or alloys thereof.5. The thin film type coil component of claim 1 , wherein the substrate is a magnetic substrate.6. The thin film type coil component of claim 1 , further comprising: an insulating layer provided on the substrate.7. The thin film type coil component of claim 6 , wherein the plurality of coil patterns are provided in the insulating layer .8. The thin film type coil component of claim 1 , wherein the cross section of each coil pattern has a double trapezoidal shape in which an undercut is formed in the lower cross section.9. A method of ...

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Номер записи: 19

07-01-2021 дата публикации

INCREASING CAPACITANCE OF A CAPACITOR

Номер: US20210005395A1

Автор: Bowen David, Hemphill Ralph Jason, King Justin, MARSHALL Timothy

Принадлежит:

A chemical etch is performed on a sheet of material. An electrochemical etch is performed on the sheet of material after the chemical etch is performed on the sheet of material. A capacitor is fabricated such that an electrode included in the capacitor includes material from the sheet of material after the electrochemical etch was performed on the sheet of material. In some instances, the chemical etch included at least partially immersing the sheet of material in an etch bath that includes molybdenum. Additionally or alternately, the chemical etch can be performed for a period of time less than 60 s. 1. A method fabricating a capacitor , comprising:performing a chemical etch on a sheet of material;performing an electrochemical etch on the sheet of material after performing the chemical etch on the sheet of material; andextracting an electrode from the sheet of material after performing the electrochemical etch on the sheet of material.2. The method of claim 1 , wherein the chemical etch is performed for less than 45 seconds.3. The method of claim 1 , wherein the chemical etch is performed for a time period between 0 seconds and 20 seconds.4. The method of claim 1 , wherein the chemical etch includes immersing the sheet of material in a chemical etch bath.5. The method of claim 4 , wherein the chemical etch bath includes molybdenum.6. The method of claim 4 , wherein the molybdenum included in the chemical etch bath is in element form or is included in a compound.7. The method of claim 6 , wherein the molybdenum is included in a chemical component selected from the group consisting of molybdic acid claim 6 , molybdenum trioxide claim 6 , sodium molybdate dihydrate claim 6 , molybdenum chloride claim 6 , and molybdenum sulfide claim 6 , molybdenum (IV) dioxide claim 6 , and molybdenum chloride.8. The method of claim 4 , wherein the chemical etch bath has a pH greater than 0.0 and less than or equal to 2.5.9. The method of claim 1 , wherein the electrochemical etch ...

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Номер записи: 20

04-01-2018 дата публикации

CHEMICAL LIQUID TREATMENT APPARATUS AND CHEMICAL LIQUID TREATMENT METHOD

Номер: US20180005854A1

Автор: Hizawa Takeshi, Ogawa Yoshihiro, Yamada Hiroaki

Принадлежит: Toshiba Memory Corporation

A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time. 1. A chemical liquid treatment apparatus comprising:processing chambers;a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; anda modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, being configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and being configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.2. The apparatus according to claim 1 , wherein the cumulative time of the chemical liquid discharge time is a sum of a time of chemical liquid discharge for each of the processing chambers obtained by measuring the time of chemical liquid discharge in each of the processing chambers.3. The apparatus according to claim 1 , wherein the chemical liquid feeding unit is configured to be capable of feeding one type of chemical liquid or a mixture of two or more types of chemical liquids.4. The apparatus according to claim 1 , wherein the chemical liquid feeding unit includes a chemical liquid tank configured to store the chemical liquid claim 1 , a pump configured ...

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Номер записи: 21

20-01-2022 дата публикации

COMPOSITION AND METHOD FOR CREATING NANOSCALE SURFACE GEOMETRY ON AN IMPLANTABLE DEVICE

Номер: US20220017822A1

Автор: Incerpi Jordan, Palanko Edward, Vaccaro Robert, Vidra Michael

Принадлежит: Tech Met, Inc.

Compositions and methods for etching a surface of an implantable device are disclosed. The compositions generally include one or more alkali components, such as a metal hydroxide and optionally an amine, one or more chelating agents, and certain dissolved metals, such as component metals of the metal or alloy to be etched and optionally iron. For example, when etching a titanium device, the metals may include titanium (Ti). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with accelerate osseointegration and healing after surgery. 1. An alkaline composition for etching a nanoscale surface geometry on a metal surface of a body implantable device , the composition comprising:a metal hydroxide; one or more chelating agents; and optionally component metals of the metal surface,wherein the body implantable device is a bone-contacting device and the nanoscale surface geometry enhances osseointegration when the bone-contacting device is implanted adjacent bone, orwherein the body implantable device is a tissue-contacting device and the nanoscale surface geometry enhances endothelial attachment and proliferation when the tissue-contacting device is implanted adjacent tissue.2. The composition of claim 1 , wherein the metal hydroxide is included in the composition at 5 wt. % to 75 wt. %.3. The composition of claim 1 , wherein the one or more chelating agents comprise a gluconate included in the composition at 0.1 wt. % to 40 wt. %.4. The composition of claim 3 , wherein the metal surface comprises a titanium surface claim 3 , and the component metal of the metal surface comprises dissolved titanium at 0.1 ppm to 7 claim 3 ,000 ppm.5. The composition of claim 4 , comprising:5 to 75 wt. % of the metal hydroxide; and100 to 7,000 ppm of the dissolved titanium.6. The composition of ...

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Номер записи: 22

08-01-2015 дата публикации

METHOD OF MANUFACTURING NANOSTRUCTURES ON A SURFACE, ON A MOLD AND ON AN OPTICAL ELEMENT, AND AN OPTICAL ELEMENT AS SUCH MANUFACTURED

Номер: US20150009571A1

Автор: Chin Patrick

Принадлежит:

A method of manufacturing nanostructures on a surface of a metal substrate is provided. The method includes forming the nanostructures by a forming step, which includes subsequently performing at least once the steps of anodizing the surface at a second voltage for forming at the surface a second oxidized metal layer comprising second pores, and performing an etching step on the surface for modifying the dimensions of the second pores. Prior to the forming step, the method comprises a substrate preparation step for enabling the forming a mix of different sized nanostructures during the forming step, the preparation step including the steps of anodizing the surface at a first voltage for forming at the surface an first oxidized metal layer comprising first pores, selectively etching the surface for extending the first pores into the metal underneath the first oxidized metal layer, and removing the first oxidized metal layer. 1. A method of manufacturing nanostructures on a surface of a metal substrate , comprising forming said nanostructures by means of a forming step , said forming step including subsequently performing at least once the steps of;anodizing said surface of said substrate at a second voltage for forming at said surface an second oxidized metal layer comprising second pores; andperforming an etching step on said surface for modifying the dimensions of said second pores;wherein prior to said forming step said method comprises a substrate preparation step for enabling the forming a mix of different sized nanostructures during said forming step, said preparation step including the steps of:anodizing said surface at a first voltage for forming at said surface an first oxidized metal layer comprising first pores;selectively etching said surface for extending said first pores into said metal underneath said first oxidized metal layer; andremoving said first oxidized metal layer.2. The method according to claim 1 , wherein said first voltage is larger than ...

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Номер записи: 23

12-01-2017 дата публикации

SLURRY COMPOSITION FOR POLISHING TUNGSTEN

Номер: US20170009353A1

Автор: HWANG Jin Sook, KONG Hyun Goo, PARK Han Teo

Принадлежит: K.C. Tech Co., Ltd.

A slurry composition for polishing tungsten is provided. The slurry composition for polishing tungsten may include a water-soluble polymer, abrasive particles and an etching adjuster. 1. A slurry composition for polishing tungsten , the slurry composition comprising:a water-soluble polymer;abrasive particles; andan etching adjuster.2. The slurry composition of claim 1 , wherein the water-soluble polymer comprises at least one selected from the group consisting of polystyrene sulfonic acid claim 1 , polyvinyl sulfonic acid claim 1 , polyacrylamide methylpropane sulfonic acid claim 1 , poly-α-methylstyrene sulfonic acid claim 1 , poly-ρ-methylstyrene sulfonic acid and salts thereof.3. The slurry composition of claim 1 , wherein the water-soluble polymer is present in an amount of 0.01% by weight (wt %) to 5 wt % in the slurry composition.4. The slurry composition of claim 1 , wherein the abrasive particles comprise at least one selected from the group consisting of a metal oxide claim 1 , a metal oxide coated with an organic material or inorganic material and the metal oxide in a colloidal phase claim 1 , andwherein the metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, mangania and magnesia.5. The slurry composition of claim 1 , wherein the abrasive particles have a particle size of 20 nanometers (nm) to 250 nm claim 1 , and comprise abrasive particles having the same particle size or at least two different particle sizes.6. The slurry composition of claim 1 , wherein the abrasive particles are present in an amount of 1 wt % to 5 wt % in the slurry composition.8. The slurry composition of claim 1 , wherein the etching adjuster comprises at least one selected from the group consisting of lactic acid claim 1 , propionic acid claim 1 , isovaleric acid claim 1 , caproic acid claim 1 , isobutyric acid claim 1 , valeric acid claim 1 , butyric acid claim 1 , cyclopentanecarboxylic ...

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Номер записи: 24

14-01-2021 дата публикации

MAGNESIUM ALLOY/RESIN COMPOSITE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20210008768A1

Автор: KURIYAGAWA Mizue, Okumura Hiroshi, TOMITA Yoshihiko

Принадлежит: Mitsui Chemicals, Inc.

A magnesium alloy/resin composite structure including a magnesium alloy member and a resin member integrated to the magnesium alloy member and made of a thermoplastic resin composition, in which the magnesium alloy member surface to which the resin member is not integrated is coated with a layer including a manganese atom, an oxygen atom, and a sulfur atom. 1. A magnesium alloy/resin composite structure comprising:a magnesium alloy member; anda resin member integrated to the magnesium alloy member and made of a thermoplastic resin composition,wherein a surface of the magnesium alloy member, to which the resin member is not integrated, is coated with a layer including a manganese atom, an oxygen atom, and a sulfur atom.2. The magnesium alloy/resin composite structure according to claim 1 ,wherein a surface of the magnesium alloy member, to which the resin member is integrated, is coated with a layer not including a sulfur atom and including a manganese atom and an oxygen atom.3. The magnesium alloy/resin composite structure according to claim 1 ,wherein an average thickness of the layer is equal to or more than 0.1 μm and equal to or less than 5 μm.4. A method for manufacturing a magnesium alloy/resin composite structure claim 1 , the method comprising:a step of preparing an integrated body in which a resin member is integrated to a magnesium alloy member surface on which a manganese oxide-containing film is formed through a fine protrusion and recess structure, anda step of treating at least a non-resin-member-integrated portion of the integrated body with an aqueous composition including a water-soluble reducing agent.5. The method for manufacturing a magnesium alloy/resin composite structure according to claim 4 ,wherein a magnesium alloy material is chemically etched with an acidic aqueous solution, and then the chemically etched magnesium alloy material is subject to a chemical conversion treatment with a permanganate aqueous solution, thereby obtaining the ...

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Номер записи: 25

09-01-2020 дата публикации

Method for selectively removing nickel platinum material

Номер: US20200010959A1

Автор: SeongJin Hong

Принадлежит: Entegris Inc

A method of selectively removing NiPt material from a microelectronic substrate, the method comprising contacting the NiPt material with an aqueous etching composition comprising: an oxidising agent; a strong acid; and a source of chloride.

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Номер записи: 26

15-01-2015 дата публикации

Self-aligned tunable metamaterials

Номер: US20150017466A1

Автор: Arturo A. Ayon, Diana Strickland, Ramakrishna Kotha

Принадлежит: Individual

A self-aligned tunable metamaterial is formed as a wire mesh. Self-aligned channel grids are formed in layers in a silicon substrate using deep trench formation and a high-temperature anneal. Vertical wells at the channels may also be etched. This may result in a three-dimensional mesh grid of metal and other material. In another embodiment, metallic beads are deposited at each intersection of the mesh grid, the grid is encased in a rigid medium, and the mesh grid is removed to form an artificial nanocrystal.

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Номер записи: 27

19-01-2017 дата публикации

METHOD FOR THE ELECTROPLATING OF TiAl ALLOYS

Номер: US20170016132A1

Автор: LINSKA Josef, Richter Sebastian

Принадлежит:

The present invention relates to a method for the coating of a surface of a TiAl alloy, in which at least one layer is electroplated on the surface of the TiAl alloy, wherein the surface of the TiAl alloy is subjected to an at least two-step surface treatment for the formation of a roughened surface, this treatment comprising at least one electrochemical processing and at least one electroless chemical processing. 1. A method for the coating of a surface of a TiAl alloy , in which at least one layer is electroplated on the surface of the TiAl alloy , wherein the surface of the TiAl alloy is subjected to an at least two-step surface treatment for the formation of a roughened surface , in which at least one electrochemical processing and at least one elecroless chemical processing are conducted.2. The method according to claim 1 , wherein in the two-step surface treatment claim 1 , the electrochemical processing occurs in a first step and the electroless chemical treatment occurs in a second step.3. The method according to claim 1 , wherein the electrochemical processing is conducted by anodic etching in an acetic acid-hydrofluoric acid solution claim 1 , wherein concentrations by weight of 800 to 900 g/L of acetic acid and 100 to 200 g/L of hydrofluoric acid are selected for the composition of the acetic acid-hydrofluoric acid solution.4. The method according to claim 1 , wherein the electroless chemical processing is produced by etching in a fluoroboric acid-sodium tetrafluoroborate solution.5. The method according to claim 1 , wherein claim 1 , between the electrochemical processing and the electroless chemical processing and/or prior to the electrochemical processing claim 1 , a cleaning step is carried out with compressed air and/or a water jet and followed by a drying step.6. The method according to claim 1 , wherein claim 1 , prior to the two-step surface treatment claim 1 , a chemical etching of the surface of the TiAl alloy is conducted with a nitric acid ...

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Номер записи: 28

16-01-2020 дата публикации

Chemical mechanical polishing method for tungsten

Номер: US20200017715A1

Автор: Cheng-Ping Lee, Lin-Chen Ho, Wei-Wen Tsai

Принадлежит: Rohm and Haas Electronic Materials CMP Holdings Inc

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; guar gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

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Номер записи: 29

21-01-2021 дата публикации

Method to increase barrier film removal rate in bulk tungsten slurry

Номер: US20210017421A1

Автор: Helin Huang, Ji Cui, Matthew E. CARNES, William J. Ward

Принадлежит: CMC Materials LLC

The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a cationic polymer, (d) an iron containing activator, (e) an oxidizing agent, and (f) water. The invention also relates to a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten and barrier layers (e.g., nitrides), with the polishing composition.

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Номер записи: 30

21-01-2021 дата публикации

SEMICONDUCTOR FILM COMPRISING AN OXIDE CONTAINING IN ATOMS, Sn ATOMS AND Zn ATOMS

Номер: US20210020784A1

Автор: Hirokazu Kawashima, Kazuyoshi Inoue, Koki Yano

Принадлежит: Idemitsu Kosan Co Ltd

A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

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Номер записи: 31

10-02-2022 дата публикации

ALUMINUM ALLOY BRAZING SHEET AND METHOD FOR MANUFACTURING THE SAME

Номер: US20220040803A1

Автор: Suzuki Taichi, Tanaka Hirokazu, Yamayoshi Tomoki

Принадлежит: UACJ Corporation

An aluminum alloy brazing sheet used for brazing in an inert gas atmosphere without using a flux includes an intermediate material and a brazing material cladded onto at least one side surface of a core material in this order from the core material side. An oxide is formed on a surface of the aluminum alloy brazing sheet by brazing heating, the oxide including any one or two or more of Mg, Li, and Ca and having a volume change ratio of 0.990 or less to a surface oxide film formed before brazing heating, and an atomic molar ratio of Mg, Li, and Ca to Al in the oxide formed on the surface of the aluminum alloy brazing sheet before brazing heating is 0.5 or less. The present invention provides an aluminum alloy brazing sheet having excellent brazability in brazing in an inert gas atmosphere without using a flux, and a method for manufacturing the same. 120-. (canceled)21. An aluminum alloy brazing sheet used for brazing in an inert gas atmosphere without using a flux , the aluminum alloy brazing sheet comprising:an intermediate material and a brazing material cladded onto at least one side surface of a core material in this order from the core material side,the core material being formed of aluminum or an aluminum alloy core material comprising any one or two or more of Fe of 1.50 mass % or less, Si of 1.50 mass % or less, Cu of 2.00 mass % or less, Mn of 2.00 mass % or less, Zn of 3.00 mass % or less, Cr of 0.30 mass % or less, Ti of 0.30 mass % or less, Zr of 0.30 mass % or less, In of 0.10 mass % or less, and Sn of 0.10 mass % or less, and optionally any one or two or more of Mg of 3.00 mass % or less, Li of 3.00 mass % or less, Ca of 3.00 mass % or less, and Bi of 1.00 mass % or less, with the balance being aluminum and inevitable impurities,the intermediate material being formed of aluminum or an aluminum alloy intermediate material comprising any one or two or more of Fe of 1.50 mass % or less, Si of 13.00 mass % or less, Cu of 2.00 mass % or less, Mn of 2.00 ...

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Номер записи: 32

23-01-2020 дата публикации

ETCHANT COMPOSITION FOR ETCHING TITANIUM LAYER OR TITANIUM-CONTAINING LAYER, AND ETCHING METHOD

Номер: US20200024750A1

Автор: SASAKI Ryou, Takahashi Hideki, YOKOYAMA Taiga

Принадлежит:

Provided are: an etchant composition for titanium or titanium alloy, the etchant composition being used for selectively etching a titanium layer or titanium-containing layer formed on an oxide semiconductor layer; and an etching method using said etchant composition. The etchant composition according to the present invention, which is used for etching a titanium layer or titanium-containing layer on an oxide semiconductor, comprises: a compound containing ammonium ions; hydrogen peroxide; and a basic compound, wherein the etchant composition has a pH of 7-11. 1. An etchant composition for etching a titanium layer or titanium-containing layer on an oxide semiconductor , comprising an ammonium ion-containing compound , hydrogen peroxide and a basic composition and having pH between 7 and 11.2. The etchant composition of claim 1 , further comprising phosphorus atom-containing oxo acid and/or an ion thereof.3. The etchant composition of claim 1 , further comprising aminocarboxylic acid and/or carboxylic acid.4. The etchant composition of claim 1 , further comprising a copper-anticorrosive agent.5. The etchant composition of claim 1 , wherein the concentration of the ammonium ion is between 0.01 to 1.00 mol/L.6. The etchant composition of claim 1 , wherein the ammonium ion-containing compound is one or more compounds selected from a group consisting of ammonium sulfate claim 1 , ammonium phosphate claim 1 , ammonium acetate claim 1 , ammonium nitrate claim 1 , ammonium chloride claim 1 , ammonium succinate and ammonia.7. The etchant composition of claim 1 , wherein the ammonium ion-containing compound is one or more compounds selected from a group consisting of ammonium sulfate claim 1 , ammonium phosphate claim 1 , ammonium acetate claim 1 , ammonium nitrate claim 1 , ammonium chloride and ammonium succinate.8. The etchant composition of claim 1 , wherein the basic composition is selected from a group consisting an inorganic alkali compound claim 1 , quaternary amine ...

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Номер записи: 33

04-02-2016 дата публикации

ETCHING COMPOSITION

Номер: US20160032185A1

Автор: Bae Sang Won, Han Sol, KIM Bo yun, KIM Hongjin, KO Yongsun, KWON Byoungho, Lee Hyosan, Lee Kuntack, PARK Sungoh

Принадлежит:

An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water. 1. An etching composition , comprising:about 1 wt % to about 7 wt % of hydrogen peroxide;about 20 wt % to about 80 wt % of phosphoric acid;about 0.001 wt % to about 1 wt % of an amine or amide polymer;0 wt % to about 55 wt % of sulfuric acid; andabout 10 wt % to about 45 wt % of deionized water having a content of.2. The etching composition as claimed in claim 1 , wherein the amine or amide polymer includes at least one of poly(2-dimethylaminoethyl methacrylate) claim 1 , poly(2-methacryloxyethyltrimethylammonium bromide) claim 1 , poly(2-vinyl-1-methylpyridinium bromide) claim 1 , poly(2-vinylpyridine N-oxide) claim 1 , poly(2-vinylpyridine) claim 1 , poly(3-chloro-2-hydroxypropyl-2-methacryloxyethyldimethylammonium chloride) claim 1 , poly(4-aminostyrene) claim 1 , poly(4-vinylpyridine N-oxide) claim 1 , poly(4-vinylpyridine) claim 1 , poly(allylamine) claim 1 , poly(allylamine hydrochloride) claim 1 , poly(butadiene/acrylonitrile) claim 1 , amine terminated claim 1 , poly(diallyldimethylammonium chloride) claim 1 , poly(ethylene glycol)bis(2-aminoethyl) claim 1 , poly(l-lysine hydrobromide) claim 1 , poly(N-methylvinylamine) claim 1 , poly(N-vinylpyrrolidone) claim 1 , poly(N-vinylpyrrolidone/2-dimethylaminoethyl methacrylate)dimethyl sulfate quaternary claim 1 , poly(vinylamine) hydrochloride claim 1 , polyaniline claim 1 , or polyethylenimine.3. The etching composition as claimed in claim 1 , wherein the etching composition is formulated to etch a metal layer that includes a first metal layer and a second metal layer claim 1 , wherein the first metal layer includes titanium (Ti) or titanium nitride (TiN) and the second metal layer includes tungsten (W).4. The etching ...

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Номер записи: 34

02-02-2017 дата публикации

ETCHANT COMPOSITION AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE BY USING THE SAME

Номер: US20170029958A1

Автор: An Soomin, Kim Youngjun, KUK Inseol, LEE JONGMUN, Lee Seungsoo, LIM Daesung, Park Hongsick, PARK Youngchul, YU Inho

Принадлежит:

An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition. 1. An etchant composition , comprising:about 0.5 wt % to about 20 wt % of persulfate,about 0.01 wt % to about 2 wt % of a fluorine compound,about 1 wt % to about 10 wt % of an inorganic acid,about 0.5 wt % to about 5 wt % of a cyclic amine compound,about 0.1 wt % to about 5 wt % of a chlorine compound,about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid,about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water,wherein the wt % is based on a total weight of the etchant composition.2. The etchant composition of claim 1 , wherein the persulfate is at least one selected from the group consisting of potassium persulfate claim 1 , sodium persulfate claim 1 , and ammonium persulfate.3. The etchant composition of claim 1 , wherein the fluorine compound is at least one selected from the group consisting of ammonium fluoride claim 1 , sodium fluoride claim 1 , potassium fluoride claim 1 , ammonium bifluoride claim 1 , sodium bifluoride claim 1 , and potassium bifluoride.4. The etchant composition of claim 1 , wherein the inorganic acid is at least one selected from the group consisting of nitric acid claim 1 , sulfuric acid claim 1 , phosphoric acid claim 1 , and perchloric acid.5. The etchant composition of claim 1 , wherein the cyclic amine compound is at least one selected from 5-aminotetrazole claim 1 , imidazole claim 1 , indole claim 1 , purine claim 1 , pyrazole claim 1 , pyridine claim 1 , pyrimidine claim ...

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Номер записи: 35

17-02-2022 дата публикации

METHOD FOR MANUFACTURING RUTHENIUM WIRING

Номер: US20220049361A1

Автор: KOGA Shinya, Mori Daijiro, Okawa Natsumi, Takahashi Kazuhiro, WADA Yukihisa

Принадлежит:

A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution. 1. A method for manufacturing a ruthenium wiring , the method comprising:(i) treating a metal surface including ruthenium using a first chemical solution comprising a compound having a functional group capable of coordinating to a ruthenium atom; and(ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.2. The method for manufacturing a ruthenium wiring according to claim 1 , wherein a cycle of (i) and (ii) is repeated two or more times.3. The method for manufacturing a ruthenium wiring according to claim 1 , wherein the second chemical solution comprises orthoperiodic acid.4. The method for manufacturing a ruthenium wiring according to claim 3 , wherein the second chemical solution further comprises ammonia.5. The method for manufacturing a ruthenium wiring according to claim 1 , wherein a pH of the second chemical solution is 8 or higher and 10 or lower.6. The method for manufacturing a ruthenium wiring according to claim 1 , wherein the compound included in the first chemical solution is at least one selected from the group consisting of a nitrogen-containing heterocyclic compound and an organic phosphonic acid.7. The method for manufacturing a ruthenium wiring according to claim 1 , the method further comprising cleaning the metal surface including ruthenium before (i). The present invention relates to a method for manufacturing a ruthenium wiring. Priority is claimed on Japanese Patent Application No. 2020-135864, filed in Japan on Aug. 11, 2020, the contents of which are ...

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Номер записи: 36

30-01-2020 дата публикации

Compositions and Methods for Activating Titanium Substrates

Номер: US20200032411A1

Автор: Subramaniaraja Sakurjayaram R.

Принадлежит: The Boeing Company

A method for pretreating a substrate prior to depositing a material thereon, the method including immersing the substrate in an activation solution for a predetermined period of time, the activation solution including a fluoride salt, hydrofluoric acid, sulfuric acid and water. 1. An activation solution comprising:water;a fluoride salt;hydrofluoric acid; andsulfuric acid.2. The activation solution of wherein the fluoride salt comprises at least one of an alkali metal cation and an alkaline earth metal cation.3. The activation solution of wherein the fluoride salt comprises at least one of potassium fluoride claim 1 , lithium fluoride claim 1 , sodium fluoride claim 1 , rubidium fluoride claim 1 , barium fluoride and strontium fluoride.4. The activation solution of wherein the fluoride salt is potassium fluoride.5. The activation solution of wherein the fluoride salt is present at a concentration ranging from about 5 grams per liter to about 120 grams per liter claim 1 , based on a total volume of the activation solution.6. The activation solution of wherein the fluoride salt is present at a concentration ranging from about 10 grams per liter to about 100 grams per liter claim 1 , based on a total volume of the activation solution.7. The activation solution of wherein the fluoride salt is present at a concentration of about 20 grams per liter claim 1 , based on a total volume of the activation solution.8. The activation solution of wherein the hydrofluoric acid is present at a concentration ranging from about 5 milliliters per liter to about 250 milliliters per liter claim 1 , based on a total volume of the activation solution.9. The activation solution of wherein the hydrofluoric acid is present at a concentration ranging from about 20 milliliters per liter to about 150 milliliters per liter claim 1 , based on a total volume of the activation solution.10. The activation solution of wherein the sulfuric acid is present at a concentration ranging from about 1 percent ...

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Номер записи: 37

01-02-2018 дата публикации

FERRITIC STAINLESS STEEL MATERIAL, SEPARATOR, POLYMER ELECTROLYTE FUEL CELL, AND METHOD FOR PRODUCING SEPARATOR

Номер: US20180034069A1

Автор: TARUTANI Yoshio

Принадлежит:

There is provided a ferritic stainless steel material that has a chemical composition comprising, in mass %: C: 0.001 to 0.030%, Si: 0.20 to 1.5%, Mn: 0.01 to 1.5%, P: 0.035% or less, S: 0.01% or less, Cr: 22.5 to 35.0%, Mo: 0.01 to 6.0%, Ni: 0.01 to 6.0%, Cu: 0.01 to 1.0%, Sn: 0.10 to 2.5%, In: 0.001 to 1.0%, N: 0.035% or less, V: 0.01 to 0.35%, Al: 0.001 to 1.0%, and the balance of Fe and inevitable impurities, and the calculated value of {Content of Cr (mass %)+3×Content of Mo (mass %)} being 22.5 to 45.0%. A polymer electrolyte fuel cell including a separator for which the steel material is used is remarkably excellent in corrosion resistance in an in-cell environment and has a contact electric resistance the same as that of a gold-plated member. 1. A ferritic stainless steel material used in a polymer electrolyte fuel cell separator , the ferritic stainless steel material having a chemical composition comprising , by mass %:C: 0.001 to 0.030%;Si: 0.20 to 1.5%;Mn: 0.01 to 1.5%;P: 0.035% or less;S: 0.01% or less;Cr: 22.5 to 35.0%;Mo: 0.01 to 6.0%;Ni: 0.01 to 6.0%;Cu: 0.01 to 1.0%;Sn: 0.10 to 2.5%;In: 0.001 to 1.0%;N: 0.035% or less,V: 0.01 to 0.35%;Al: 0.001 to 1.0%;REM: 0 to 0.1%;Nb: 0 to 0.35%;Ti: 0 to 0.35%, andthe balance: Fe and inevitable impurities, whereina calculated value of {Content of Cr (mass %)+3×Content of Mo (mass %)} is 22.5 to 45.0% by mass.2. The ferritic stainless steel material according to claim 1 , whereinthe chemical composition includesREM: 0.003 to 0.1%.3. The ferritic stainless steel material according to claim 1 , whereinthe chemical composition comprisesNb: 0.001 to 0.35% (the Nb content satisfies 3.0≦Nb/C≦25.0) and/orTi: 0.001 to 0.35% (the Ti content satisfies 3.0≦Ti/(C+N)≦25.0).4. A separator used for a polymer electrolyte fuel cell claim 1 , the separator using the ferritic stainless steel according to .5. A polymer electrolyte fuel cell comprising the separator according to .6. A method for producing a separator used for a ...

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Номер записи: 38

02-02-2017 дата публикации

METHOD FOR MANUFACTURING CIRCUIT BOARD AND CIRCUIT BOARD

Номер: US20170034920A1

Автор: IMAI Shinji, Kawashima Katsura, Koike Kazunori, TSUCHIYA Kenju, TSUJI Kosuke

Принадлежит: TOYO ALUMINIUM KABUSHIKI KAISHA

The present invention relates to a method for manufacturing a circuit board including the steps of preparing a substrate containing silicon at least at a surface, applying a paste containing aluminum particles onto the substrate, forming a conductor layer on the substrate by firing the substrate to which the paste has been applied, forming a resist film having a specific pattern on the conductor layer, and removing with an etchant, the conductor layer in a portion where the resist film has not been formed, the etchant containing fluoride ions and metal ions of a metal M of which standard electrode potential is higher in value than a standard electrode potential of aluminum, and to a circuit board which can be manufactured with such a method. 1. A method for manufacturing a circuit board , comprising the steps of:preparing a substrate containing silicon at least at a surface;applying a paste containing aluminum particles onto the substrate;forming a conductor layer on the substrate by firing the substrate to which the paste has been applied;forming a resist film having a specific pattern on the conductor layer; andremoving with an etchant, the conductor layer in a portion where the resist film has not been formed,the etchant containing fluoride ions and metal ions of a metal M of which standard electrode potential is higher in value than a standard electrode potential of aluminum.2. The method for manufacturing a circuit board according to claim 1 , whereinthe metal ions of the metal M are iron ions or copper ions, and the fluoride ions are derived from at least one compound selected from the group consisting of hydrogen fluoride, tetrafluorosilicon, hexafluorosilicic acid, hexafluorosilicate, boron trifluoride, fluoroboric acid, fluoroborate, phosphorus fluoride, ammonium fluoride, silver fluoride, aluminum fluoride, cesium fluoride, potassium fluoride, sodium fluoride, and lithium fluoride.3. The method for manufacturing a circuit board according to claim 1 , ...

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Номер записи: 39

24-02-2022 дата публикации

Method for manufacturing a composite of aluminum alloy

Номер: US20220055346A1

Автор: Naoki Andoh, Yoshihiro Yamaguchi

Принадлежит: Taisei Purasu Co Ltd

An aluminum alloy material is prepared that has surface configuration of threefold irregularities such that rough surface having surface roughness of 10 to 100 μm period is observed with an electron microscope in a magnification of 1000 times, surface having fine irregularities of 1 to 5 μm period based on crystal grain boundary is observed with an electron microscope in a magnification of 10000 times and surface having ultrafine irregularities of 30 to 100 nm period is confirmed with an electron microscope in a magnification of 100000 times. Aluminum alloy material is integrally joined with a resin composition consisting of a total resin part containing polyphenylene sulfide resin by 70 mass % or more of the resin part, modified polyolefin resin by 30 mass % or less of the resin part and a resin of third component having ability for promoting compatibility of polyphenylene sulfide resin and modified polyolefin resin.

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Номер записи: 40

07-02-2019 дата публикации

Method for etching the surface of aluminum fragments, aluminum fragments with an etched surface and material composites containing such fragments

Номер: US20190040532A1

Автор: Juergen Carstensen, Mark-Daniel Gerngroß, Melike Baytekin-Gerngroß, Rainer Adelung

Принадлежит: Christian Albrechts Universitaet Kiel

A method for etching fragments of aluminum or an aluminum alloy comprising the steps of: a. providing a hydrochloric acid solution in a trough-shaped container; b. inoculating the hydrochloric acid solution by chemically dissolving an amount of aluminum to produce an etching solution; c. adding the fragments to the etching solution immediately after the inoculation; d. etching the fragments for 0.5 to 10 minutes while stirring in such a way that the fragments are entrained by the motion of the etching solution; e. stopping the etching by diluting the etching solution with water; f. removing the etched fragments; g. repeatedly rinsing the fragments with water and h. rinsing the fragments with an organic desiccant. An etched fragment of aluminum or an aluminum alloy and also to a composite material comprising etched fragments.

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Номер записи: 41

15-02-2018 дата публикации

ETCHING LIQUID AND ETCHING METHOD

Номер: US20180044801A1

Автор: HAYASHIZAKI Masahiro, OGINO Yuki, Otani Minoru, Tojima Mami

Принадлежит:

An object of the present invention is to provide: an etching liquid which is capable of etching titanium selectively in the presence of copper, and is further low in toxicity and excellent in storage stability; and an etching method using this etching liquid. The etching liquid of the present invention which is a liquid includes at least one acid selected from the group consisting of sulfuric acid, hydrochloric acid, and trichloroacetic acid, and at least one organic sulfur compound selected from the group consisting of a thioketone compound and a thioether compound, and makes it possible to etch titanium selectively in the presence of copper. 1. An etching liquid for etching titanium selectively in the presence of copper , comprising:at least one acid selected from the group consisting of sulfuric acid, hydrochloric acid, and trichloroacetic acid; andat least one organic sulfur compound selected from the group consisting of a thioketone compound and a thioether compound.2. The etching liquid according to claim 1 , wherein the thioketone compound is at least one selected from the group consisting of thiourea claim 1 , diethylthiourea claim 1 , and trimethylthiourea.3. The etching liquid according to claim 1 , wherein the thioether compound is at least one selected from the group consisting of methionine claim 1 , ethionine claim 1 , and 3-(methylthio) propionic acid.4. The etching liquid according to claim 1 , further comprising an α-hydroxycarboxylic acid claim 1 , and/or a salt thereof.5. The etching liquid according to claim 4 , wherein the α-hydroxycarboxylic acid is at least one selected from the group consisting of tartaric acid claim 4 , malic acid claim 4 , citric acid claim 4 , lactic acid claim 4 , and glyceric acid.6. The etching liquid according to claim 1 , wherein the concentration of the acid(s) is from 20 to 70% by weight claim 1 , andthe concentration of the organic sulfur compound(s) is from 0.01 to 10% by weight.7. The etching liquid according to ...

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Номер записи: 42

26-02-2015 дата публикации

MACHINE AND METHOD TO CHEMICALLY ENGRAVE A PLATE OF STAINLESS STEEL

Номер: US20150053646A1

Автор: Dupuy Franck, Harmand Joël, Lapeyre François, Marcos Inocencio

Принадлежит: The Diller Corporation

A chemical engraving machine to engrave a plate of stainless steel moved along an horizontal direction, said machine comprising a base, an acid liquid circuit adapted to chemically attack said plate of stainless steel at locations where it is not protected by a protection mask, a lower guiding device, an upper guiding device, the lower and upper guiding devices being configured to maintain said plate of stainless steel substantially vertically, and a nozzle support bearing a plurality of spraying nozzles projecting horizontally the acid liquid toward the plate of stainless steel. A method chemically engraves a plate of stainless steel in a vertical position. 1. A chemical engraving machine to engrave a plate of stainless steel configured to be moved along a first direction , said machine comprising:a base,a housing,an acid liquid circuit adapted to chemically attack said plate of stainless steel with an acid liquid at locations where the plate is not protected by a protection mask,a lower guiding device borne by said base,an upper guiding device located above and substantially vertically with regard to the lower guiding device, the lower and upper guiding devices being configured to maintain said plate of stainless steel substantially vertically, andat least a nozzle support bearing a plurality of spraying nozzles configured to project the acid liquid toward the plate of stainless steel substantially horizontally.2. The machine according to claim 1 , wherein the nozzle support is configured to be moved according to an alternate movement claim 1 , said movement being substantially parallel to a plane defined by the first direction and the vertical direction.3. The machine according to claim 1 , comprising a driving system configured to drive the stainless steel plate along the first direction at a predetermined speed.4. The machine according to claim 1 , wherein the acid liquid comprises mainly ferric chloride.5. The machine according to claim 1 , comprising a ...

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Номер записи: 43

25-02-2016 дата публикации

STEEL MATERIAL, HYDROGEN CONTAINER, METHOD FOR PRODUCING THE STEEL MATERIAL, AND METHOD FOR PRODUCING THE HYDROGEN CONTAINER (AS AMENDED)

Номер: US20160053355A1

Автор: Nagao Akihide, Takagi Shusaku

Принадлежит: JFE STEEL CORPORATION

A steel material includes: a composition containing, by mass, C: 0.05% to 0.60%, Si: 0.01% to 2.0%, Mn: 0.3% to 3.0%, P: 0.001% to 0.040%, S: 0.0001% to 0.010%, N: 0.0001% to 0.0060%, Al: 0.01% to 1.5%, one or more elements selected from Ti: 0.01% to 0.20%, Nb: 0.01% to 0.20%, and V: 0.01% or more and less than 0.05%, and one or more elements selected from B: 0.0001% to 0.01%, Mo: 0.005% to 2.0%, and Cr: 0.005% to 3.0%, with the balance being Fe and inevitable impurities; and a steel microstructure that includes 95% or more of tempered martensite on a volume fraction basis, that includes a precipitate having a diameter of 100 nm or less and including one or more elements selected from Ti, Nb, and V and one or more elements selected from carbon and nitrogen at a density of 50 particles/μmor more, and that includes prior austenite having a grain diameter of 3 μm or more. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. A steel material comprising: a composition containing , by mass , C: 0.05% to 0.60% , Si: 0.01% to 2.0% , Mn: 0.3% to 3.0% , P: 0.001% to 0.040% , S: 0.0001% to 0.010% , N: 0.0001% to 0.0060% , Al: 0.01% to 1.5% , one or more elements selected from Ti: 0.01% to 0.20% , Nb: 0.01% to 0.20% , and V: 0.01% or more and less than 0.05% , and one or more elements selected from B: 0.0001% to 0.01% , Mo: 0.005% to 2.0% , and Cr: 0.005% to 3.0% , with the balance being Fe and inevitable impurities;and a steel microstructurethat includes 95% or more of tempered martensite on a volume fraction basis,{'sup': '2', 'that includes a precipitate having a diameter of 100 nm or less and including one or more elements selected from Ti, Nb, and V and one or more elements selected from carbon and nitrogen at a density of 50 particles/μmor more,'}and that includes prior austenite having a grain diameter of 3 μm or more.16. The steel ...

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Номер записи: 44

25-02-2016 дата публикации

LIQUID COMPOSITION USED IN ETCHING COPPER - AND TITANIUM - CONTAINING MULTILAYER FILM, ETCHING METHOD IN WHICH SAID COMPOSITION IS USED, METHOD FOR MANUFACTURING MULTILAYER-FILM WIRING, AND SUBSTRATE

Номер: US20160053384A1

Автор: ADANIYA Tomoyuki, Tamai Satoshi, Yube Kunio

Принадлежит: MITSUBISHI GAS CHEMICALCOMPANY, INC.

The present invention provides a liquid composition used for etching a copper- and titanium-containing multilayer film, a method for etching a copper- and titanium-containing multilayer film by using said liquid composition, a method for manufacturing multilayer-film wiring according to said etching method, and a substrate provided with multilayer-film wiring manufactured according to said manufacturing method. According to the present invention, a liquid composition comprising (A) a maleic acid ion source, (B) a copper ion source and (C) a fluoride ion source and having the pH value of 0-7 is used. 1. A liquid composition used for etching a multilayer film comprising a layer made of copper or a compound containing copper as a primary component and a layer made of titanium or a compound containing titanium as a primary component , the liquid composition comprising:(A) a maleic acid ion source;(B) a copper ion source; and(C) a fluoride ion source,wherein the pH value is 0-7.2. The liquid composition according to claim 1 , wherein the maleic acid ion source (A) is at least one species selected from the group consisting of maleic acid and maleic anhydride claim 1 , where the concentration thereof is 0.01-5 mol/kg.3. The liquid composition according to claim 1 , wherein the copper ion source (B) is at least one species selected from the group consisting of copper claim 1 , copper sulfate claim 1 , copper nitrate claim 1 , copper hydroxide and cupric chloride claim 1 , where the concentration thereof is 0.01-5 mol/kg.4. The liquid composition according to claim 1 , wherein the mix proportion of the maleic acid ion source (A) to the copper ion source (B) is 0.01-40 on molar basis.5. The liquid composition according to claim 1 , wherein the fluoride ion source (C) is at least one species selected from the group consisting of hydrofluoric acid claim 1 , ammonium fluoride claim 1 , ammonium acid fluoride and buffered hydrogen fluoride claim 1 , where the concentration ...

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Номер записи: 45

25-02-2016 дата публикации

ETCHING METHOD, ETCHING LIQUID AND ETCHING LIQUID KIT TO BE USED IN SAID METHOD, AND SEMICONDUCTOR SUBSTRATE PRODUCT MANUFACTURING METHOD

Номер: US20160056054A1

Автор: KAMIMURA Tetsuya, KOYAMA Akiko, MIZUTANI Atsushi, MURAYAMA Satoru, SUGISHIMA Yasuo, TAKAHASHI Satomi

Принадлежит: FUJIFILM Corporation

There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching liquid which contains a specific acid compound into contact with the second layer and selectively removing the second layer. 1. An etching method of a semiconductor substrate that includes a first layer containing germanium and a second layer containing at least one metal selected from nickel platinum , titanium , nickel , and cobalt , the method comprising:bringing an etching liquid which contains the following acid compounds into contact with the second layer and selectively removing the second layer.Acid compounds: at least one compound selected from halogen acid and a salt thereof; hexafluorosilicic acid and a salt thereof; tetrafluoroboric acid and a salt thereof, and hexafluorophosphoric acid and a salt thereof2. The etching method according to claim 1 , wherein the concentration of germanium of the first layer is 40% by mass or greater.3. The etching method according to claim 1 , further comprising:applying a heat treatment to at least one of the first layer and the second layer before or after etching with the etching liquid.4. The etching method according to claim 1 , wherein the second layer is selectively removed with respect to the first layer and the following third layer.Third layer: layer containing germanium interposed between the first layer and the second layer and component metals of the second layer5. The etching method according to claim 1 ,wherein the semiconductor substrate further includes a fourth layer containing at least one of TiN, Al, AlO, W, WOx, HfOx, HfSiOx, SiN, SiOCN, and TiAlC, andthe second layer is selectively removed also with respect to the fourth layer.6. The etching method according to claim 1 , wherein claim 1 , with respect to ...

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Номер записи: 46

22-02-2018 дата публикации

SEPARATOR FOR POLYMER ELECTROLYTE FUEL CELL AND METHOD FOR PRODUCING THE SAME

Номер: US20180053948A1

Автор: TARUTANI Yoshio

Принадлежит:

There is provided a separator for polymer electrolyte fuel cells having a substrate of a ferritic, having a chemical composition comprising, in mass %, C: 0.001 to 0.012%, Si: 0.01 to 0.6%, Mn: 0.01 to 0.6%, P: 0.035% or less, S: 0.01% or less, Cr: 22.5 to 35.0%, Mo: 0.01 to 4.5%, Ni: 0.01 to 2.5%, Cu: 0.01 to 0.6%, Sn: 0.01 to 1.0%, In: 0.001 to 0.30%, N: 0.015% or less, V: 0.01 to 0.35%, and Al: 0.001 to 0.050%, and the calculated value of {Content of Cr (%)+3×Content of Mo (%)} being 22.5 to 45.0, and includes a surface modified layer containing O: less than 30% and the balance: Sn and In. A polymer electrolyte fuel cell including the separator is remarkably excellent in corrosion resistance in an in-cell environment. 1. A separator for polymer electrolyte fuel cells having a substrate of a ferritic stainless steel , having a chemical composition comprising , in mass %:C: 0.001 to 0.012%;Si: 0.01 to 0.6%;Mn: 0.01 to 0.6%;P: 0.035% or less;S: 0.01% or less;Cr: 22.5 to 35.0%;Mo: 0.01 to 4.5%;Ni: 0.01 to 2.5%;Cu: 0.01 to 0.6%;Sn: 0.01 to 1.0%;In: 0.001 to 0.30%;N: 0.015% or less;V: 0.01 to 0.35%;Al: 0.001 to 0.050%;REM: 0 to 0.1%;Nb: 0 to 0.35%;Ti: 0 to 0.35%; andthe balance: Fe and inevitable impurities, whereina calculated value of {Content of Cr (mass %)+3×Content of Mo (mass %)} is 22.5 to 45.0 mass %, and further comprisinga surface modified layer that has an oxygen concentration of less than 30 mass % and includes the balance containing Sn and In.2. A method for producing a separator for polymer electrolyte fuel cells , the method comprisingforming, into a separator shape, a ferritic stainless sheet having a chemical composition including, in mass %:C: 0.001 to 0.012%;Si: 0.01 to 0.6%;Mn: 0.01 to 0.6%;P: 0.035% or less;S: 0.01% or less;Cr: 22.5 to 35%;Mo: 0.01 to 4.5%;Ni: 0.01 to 2.5%;Cu: 0.01 to 0.6%;Sn: 0.01 to 1.0%;In: 0.001 to 0.30%;N: 0.015% or less;V: 0.01 to 0.35%;Al: 0.001 to 0.050%;REM: 0 to 0.1%;Nb: 0 to 0.35%;Ti: 0 to 0.35%; andthe balance: Fe and ...

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Номер записи: 47

05-03-2015 дата публикации

Method and apparatus for producing detailed fabric applique

Номер: US20150060399A1

Автор: Dywan J. Michael

Принадлежит:

A method to produce a fabric applique includes the steps of providing a piece of steel, removing oxide layers from the steel, and forming a pattern on the steel. The steel is etched and coded. A die cutting laminate including the coded steel is prepared and compressed to cut fabric. 1. A method to produce a fabric applique , comprising the steps of: (i) more than 0.3% by weight carbon and', '(ii) exterior surfaces having oxide layers;, '(a) providing a piece of high carbon non-stainless steel including'}(b) removing oxide layers from said exterior surfaces; (i) a plurality of intermediate cover portions not comprising photo resist and,', '(ii) photo resist cover portions bounding said intermediate portions and having a width greater than the desired final thickness of a die cutting edge,', 'said photo resist cover portions having a thickness in the range of 0.0034 inch to 0.0055 inch;, '(c) forming a detailed pattern on said steel, said pattern comprising'} (i) in said steel beneath said intermediate cover portions a depth in the range of 0.027 inch to 0.035 inch,', '(ii) a rounded die cutting edge, and', '(iii) a safety die;, '(c) etching through said intermediate cover portions and etching said steel beneath said intermediate cover portions to produce'}(d) promptly after said etching is completed removing said photo resist cover portions from said safety die;(e) promptly after said photo resist cover portions are removed applying to said safety die a protective non-stick coating having a thickness in the range of 0.0008 to 0.0012 inch to round edges on said die and minimize corrosion of said safety die;providing a pair of spaced apart parallel rollers;(g) providing a stack of a plurality of fabric sections to be cut by said safety die, each fabric section having a thickness of less than 0.010 inch;(h) providing a thin metal plate having a thickness of at least 0.010 inch;(i) providing a pair of polymer bounding sheets; (i) fabric sections contacting and generally ...

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Номер записи: 48

04-03-2021 дата публикации

COMPOSITION AND METHOD FOR CREATING NANOSCALE SURFACE GEOMETRY ON A COBALT CHROMIUM IMPLANTABLE DEVICE

Номер: US20210062347A1

Автор: Incerpi Jordan, Schutzer Daniel Jon, Vidra Michael

Принадлежит: Tech Met, Inc.

Compositions and methods for etching an implantable device having a cobalt chrome surface are disclosed. The compositions generally include at least two mineral acids, iron (Fe), and certain component metals of the cobalt chrome to be etched. For example, when etching a cobalt chromium molybdenum alloy, the metals may include chromium (Cr), molybdenum (Mo), and optionally, cobalt (Co). The at least two mineral acids may include hydrochloric acid (HCl), nitric acid (HNO), and hydrofluoric acid (HF). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with improved osseointegration, biocompatibility, and healing after surgery. 1. A composition for etching a nanoscale surface geometry into a cobalt chromium surface of a body implantable device , the composition comprising:{'sub': 3', '2', '4, 'at least two mineral acids selected from the groups consisting of hydrochloric acid (HCl), nitric acid (HNO), sulfuric acid (HSO), and hydrofluoric acid (HF); and'}component metals of the cobalt chromium alloy,wherein the body implantable device is a bone-contacting device and the nanoscale surface geometry enhances osseointegration when the bone-contacting device is implanted adjacent living bone, orwherein the body implantable device is a tissue-contacting device and the nanoscale surface geometry enhances endothelial attachment and proliferation when the tissue-contacting device is implanted adjacent tissue.2. The composition of claim 1 , wherein the at least two mineral acids comprise hydrochloric acid (HCl) claim 1 , nitric acid (HNO) claim 1 , and hydrofluoric acid (HF).3. The composition of claim 2 , comprising:2N-10N hydrochloric acid (HCl);{'sub': '3', '05N-0.8N nitric acid (HNO); and'}0.6N-1.3N hydrofluoric acid (HF).4. The composition of claim 1 , wherein the component ...

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Номер записи: 49

20-02-2020 дата публикации

METHOD OF MANUFACTURING DEPOSITION MASK, INTERMEDIATE PRODUCT TO WHICH DEPOSITION MASK IS ALLOCATED, AND DEPOSITION MASK

Номер: US20200056279A1

Автор: Ikenaga Chikao, MARUOKA Takanori, MATSUURA Sachiyo

Принадлежит: Dai Nippon Printing Co., Ltd.

A deposition mask in which deformation of long sides is restrained is manufactured. A manufacturing method of a deposition mask includes a step of preparing a metal plate; a processing step of processing the metal plate into an intermediate product comprising: a plurality of deposition mask portions each including a pair of long sides and a pair of short sides, and having a plurality of through-holes formed therein; and a support portion that surrounds the plurality of deposition mask portions, and is partially connected to the short sides of the plurality of deposition mask portions; and a separation step of separating the deposition mask portions from the support portion to obtain the deposition mask. In the intermediate product, the long sides of the deposition mask portions are not connected to the support portion. 1. A manufacturing method of a deposition mask including a pair of long sides and a pair of short sides , and having a plurality of through-holes formed therein , the manufacturing method comprising:a step of preparing a metal plate;a processing step of processing the metal plate into an intermediate product comprising: a plurality of deposition mask portions each including a pair of long sides and a pair of short sides, and having a plurality of through-holes formed therein; and a support portion that surrounds the plurality of deposition mask portions, and is partially connected to the short sides of the plurality of deposition mask portions; anda separation step of separating the deposition mask portions from the support portion to obtain the deposition mask;wherein, in the intermediate product, the long sides of the deposition mask portions are not connected to the support portion.2. The manufacturing method of a deposition mask according to claim 1 , whereinin the intermediate product, the short side of the deposition mask portion includes a plurality of projections projecting toward the support portion so as to be connected to the support ...

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Номер записи: 50

22-05-2014 дата публикации

Etching composition and method of manufacturing semiconductor device using the same

Номер: US20140141616A1

Автор: Bo yun KIM, Byoungho Kwon, HongJin Kim, Hyosan Lee, Kuntack Lee, Sang Won Bae, Sol Han, Sungoh PARK, Yongsun Ko

Принадлежит: SAMSUNG ELECTRONICS CO LTD

An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

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Номер записи: 51

10-03-2016 дата публикации

METHOD OF PREPARING ALUMINUM-RESIN COMPLEX

Номер: US20160067894A1

Автор: Jo Yong Wan, LEE Eun Kyung

Принадлежит:

Provided is a method of preparing an aluminum-resin complex in which an aluminum alloy and a resin composition are integrated with each other. More particularly, the present invention is relates to a method of preparing an aluminum-resin complex having improved bonding strength by preparing an aluminum alloy having a more uniform etching surface using an alkaline aqueous solution to which a chelating agent and a cycloamine are added and an acidic aqueous solution to which a chelating agent is added and injection-molding a resin composition using the aluminum alloy. 1. A method of preparing an aluminum-resin complex comprising:preparing an aluminum alloy material having an etched surface; andinjection-molding a resin composition on the etched surface of the aluminum alloy material to thereby be integrated with each other,wherein the preparing of the aluminum alloy material includes:i) a primary processing process of treating the aluminum alloy material with an alkaline aqueous solution to which a chelating agent and a cycloamine are added; andii) a secondary processing process of treating the aluminum alloy material with an acidic aqueous solution to which a chelating agent is added.2. The method of preparing an aluminum-resin complex of claim 1 , wherein the etched surface of the aluminum alloy material has an average inner diameter of 0.1 to 10 μmand an average surface roughness of 50 to 200 μm.3. The method of preparing an aluminum-resin complex of claim 1 , wherein the chelating agent is added in a range of 0.001 to 0.5 parts by weight based on 100 parts by weight of the alkaline or acidic aqueous solution.4. The method of preparing an aluminum-resin complex of claim 1 , wherein the cycloamine is added in a range of 0.001 to 0.2 parts by weight based on 100 parts by weight of the alkaline aqueous solution.5. The method of preparing an aluminum-resin complex of claim 1 , wherein the primary processing process claim 1 , the secondary processing process claim 1 , or ...

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Номер записи: 52

28-02-2019 дата публикации

ALUMINUM ALLOY HAVING VISIBLE GRAINS AND ALUMINUM ALLOY COLORED BY DOUBLE ANODIZATION

Номер: US20190062885A1

Автор: Beadle Michael, Heley Richard, Prasannavenkatesan Rajesh

Принадлежит:

Embodiments relate to a type of aluminum alloy with grains visible to naked eyes. The aluminum alloy may have an average grain size of at least 100 μm. The aluminum alloy can be produced by a process such as casting, extrusion, solutionizing, aging, and etching. The solutionizing causes recrystallization of aluminum and causes grains of the aluminum to grow. Compared with the solutionizing, the aging is performed at lower temperature but enhances strength of the aluminum alloy. The etching makes grain boundaries of the aluminum alloy more prominent, rendering the grains of the aluminum alloy visible to a naked human eye. 1. A method for processing an aluminum alloy , the method comprising:reducing iron concentration in the aluminum alloy to obtain a concentration of iron below a threshold value;heating the aluminum alloy at a first temperature for a first period of time, wherein the heating causes recrystallization of aluminum;aging the aluminum alloy at a second temperature for a second period of time, the second temperature lower than the first temperature, wherein the aging enhances strength of the aluminum alloy; andrendering grain boundaries of the aluminum alloy visible to a human eye.2. The method of claim 1 , further comprising:growing average grain size of the aluminum alloy to at least 100 μm.3. The method of claim 2 , wherein the growing of the average grain size is performed during a solutionizing process.4. The method of claim 3 , wherein the solutionizing temperature is higher than 480° C.5. The method of claim 3 , wherein the aging is performed at a temperature lower than a temperature at which the solutionizing process is performed.6. The method of claim 1 , wherein the iron concentration is reduced during a casting process.7. The method of claim 1 , further comprising reducing one or more of zirconium claim 1 , scandium claim 1 , titanium and carbide.8. The method of claim 1 , wherein rendering of the grain boundaries visible comprises etching grain ...

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Номер записи: 53

08-03-2018 дата публикации

METHOD FOR PRODUCING BASE FOR METAL MASKS, METHOD FOR PRODUCING METAL MASK FOR VAPOR DEPOSITION, BASE FOR METAL MASKS, AND METAL MASK FOR VAPOR DEPOSITION

Номер: US20180065162A1

Автор: FUJITO Daisei, KURATA Masashi, MIKAMI Naoko, Nishi Takehiro, NISHITSUJI Kiyoaki, TAMURA Sumika, TERADA Reiji

Принадлежит:

A rolled metal sheet includes an obverse surface and a reverse surface that is a surface located opposite to the obverse surface. At least either one of the obverse surface and the reverse surface is a processing object. A method for manufacturing a metal mask substrate includes reducing a thickness of the rolled metal sheet to 10 μm or less by etching the processing object by 3 μm or more by use of an acidic etching liquid, and roughening the processing object so that the processing object becomes a resist formation surface that has a surface roughness Rz of 0.2 μm or more, thereby obtaining a metal mask sheet. 1. A method for manufacturing a metal mask substrate , the method comprising:preparing a rolled metal sheet, the rolled metal sheet including an obverse surface and a reverse surface that is a surface located opposite to the obverse surface, at least either one of the obverse surface and the reverse surface being an object to be processed; andreducing a thickness of the rolled metal sheet to 10 μm or less by etching the object to be processed by 3 μm or more by use of an acidic etching liquid, and roughening the object to be processed so that the processing object becomes a resist formation surface that has a surface roughness Rz of 0.2 μm or more, thereby obtaining a metal mask sheet.2. The method for manufacturing a metal mask substrate according to claim 1 , wherein the object to be processed comprises both the obverse surface and the reverse surface.3. The method for manufacturing a metal mask substrate according to claim 1 , wherein the object to be processed is either the obverse surface or the reverse surface claim 1 ,the method further comprising stacking a plastic support layer on a surface located opposite to the object to be processed,the object to be processed is etched in a state in which the rolled metal sheet and the support layer are stacked together, thereby obtaining a metal mask substrate, in which the metal mask sheet and the support ...

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Номер записи: 54

10-03-2016 дата публикации

STRIP PROCESS AND COMPOSITION FOR MCrAIY COATINGS AND A METHOD OF USING THE SAME

Номер: US20160068968A1

Автор: Minor Michael J., Stratton Eric W.

Принадлежит:

The present disclosure relates generally to strip process for removing a coating from a substrate comprising the steps of: providing a base alloy and a MCrAlY coating deposited over the base alloy substrate; and removing the MCrAlY coating by bringing the MCrAlY coating in contact with an acid solution comprising nitric acid, phosphoric acid and ammonium bifluoride in an aqueous solution, and maintaining the acid solution contact for sufficient time and at sufficient temperature to permit the coating to be stripped from the base alloy substrate. 1. A strip process for removing a coating from a substrate comprising the steps of: placing a MCrAlY coating deposited over a base alloy substrate in contact with an effective amount of an acid solution comprising nitric acid , phosphoric acid and ammonium bifluoride in an aqueous solution; and maintaining said acid solution at a temperature in the range of from about 140 to 160 degrees Fahrenheit for sufficient contact time to permit said coating to be stripped from said alloy.2. A strip process according to wherein the acidic component of said acid solution consists essentially of nitric acid claim 1 , phosphoric acid and ammonium bifluoride as active ingredients.3. A strip process according to wherein said acid solution is substantially free of any chloride-based chemicals or acids.4. A strip process according to wherein said acid solution comprising 12 to 16% by volume nitric acid claim 1 , comprising 3 to 7% by volume phosphoric acid and comprising 16 to 20% mass/volume ammonium bifluoride claim 1 , the balance being water.5. A strip process according to wherein said MCrAlY coating is subject to a series of de-smutting blasts during said contact time.6. A strip process according to wherein said acid solution is maintained in contact with said MCrAlY coating by spraying.7. A strip process according to wherein said acid solution is maintained in contact with said MCrAlY coating by immersion.8. A strip process according to ...

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Номер записи: 55

17-03-2022 дата публикации

Austenitic stainless steel sheet for fuel cell separators and production method therefor

Номер: US20220085388A1

Автор: Shin Ishikawa, Takayoshi Yano

Принадлежит: JFE Steel Corp

An austenitic stainless steel sheet for fuel cell separators comprises a textured structure at a surface of the stainless steel sheet, the textured structure having recessed parts and projected parts, an average height of the projected parts being 30 nm or more and 300 nm or less, and an average interval between the projected parts being 20 nm or more and 350 nm or less, wherein a ratio [Cr]/[Fe] of an atomic concentration of Cr existing in chemical form other than metal to an atomic concentration of Fe existing in chemical form other than metal at the surface of the stainless steel sheet is 1.0 or more.

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Номер записи: 56

19-03-2015 дата публикации

METHOD FOR THE PREPARATION OF SURFACES OF DEVICES MADE OF TITANIUM OR TITANIUM ALLOYS, ZIRCONIUM, ZIRCONIA, ALUMINA OR ZIRCONIA/ALUMINA COMPOUNDS, STAINLESS STEELS FOR MEDICAL USE AND COBALT-BASE SUPERALLOYS FOR MEDICAL USE IMPLANTABLE IN THE HUMAN OR ANIMAL BODY, HAVING AS A RESULT NANOMETER ROUGHNESS, FORMATION OF SELF-INDUCED SURFACE OXIDE, HIGH ANTI-METALOSIS CLEANING AND POSSIBLE PREPARATION OF PARTS WITH SURFACE ANTIMICROBIAL TREATMENT

Номер: US20150076114A1

Автор: CIRANNI Cristiano Ugo

Принадлежит:

A method for the surface preparation of devices made of titanium or titanium alloys, zirconium, zirconia, alumina or zirconia/alumina compounds, stainless steels and cobalt-base superalloys for medical use; the devices being implantable in the human body or in animals and attached extracorporeal parts made with the same materials, particularly for dental and orthopedic implantology. The implantable device is treated by exposing at least one portion of the surface of the device to a solution including hydrofluoric acid, phosphoric acid, at least one surfactant substance and water; for a time period and in conditions sufficient to provide the surface of the implant with the desired surface roughness and the formation of self-induced surface titanium dioxide, maintaining the structural integrity of the device and without altering the centesimal measurement size. The surface thus is rinsed with demineralized water and ultrasounds in order to prevent metalosis phenomena. 1. Method for the surface preparation of dental or orthopedic implants made of titanium , or titanium alloys , zirconium , zirconia , alumina or zirconia/alumina compounds , stainless steels for medical use and cobalt-base superalloys for medical use; the method being adapted to endow the surface of said implant with nanometer roughness in order to facilitate the growth of the bone tissue after the application of the implant; the method is characterized in that it provides for the exposure of at least one portion of the surface of said implant with a solution comprisinga. hydrofluoric acid,b. phosphoric acid,c. at least one surfactant substanced. water.the exposure occurring for a time period and in conditions sufficient to provide the surface of the implant with the desired surface roughness, maintaining the structural integrity of the dental or orthopedic implant.2. Method claim 1 , according to claim 1 , characterized in that after the exposure in said solution claim 1 , it provides for the immersion ...

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Номер записи: 57

07-03-2019 дата публикации

TREATMENT LIQUID, METHOD FOR WASHING SUBSTRATE, AND METHOD FOR REMOVING RESIST

Номер: US20190071623A1

Автор: KAMIMURA Tetsuya, Takahashi Tomonori

Принадлежит: FUJIFILM Corporation

A treatment liquid is a treatment liquid for a semiconductor device, containing a fluorine-containing compound, a corrosion inhibitor, and calcium, in which the mass content ratio of the calcium to the fluorine-containing compound in the treatment liquid is 1.0×10to 1.0×10. 1. A treatment liquid for a semiconductor device , comprising:a fluorine-containing compound;a corrosion inhibitor; andcalcium,{'sup': −10', '−4, 'wherein the mass content ratio of the calcium to the fluorine-containing compound in the treatment liquid is 1.0×10to 1.0×10.'}2. The treatment liquid according to claim 1 ,{'sup': −10', '−4, 'wherein the mass content ratio of the calcium to the corrosion inhibitor is 1.0×10to 1.0×10.'}3. The treatment liquid according to claim 1 ,wherein the content of the calcium is 0.1 ppt by mass to 1,000 ppb by mass with respect to the total mass of the treatment liquid.4. The treatment liquid according to claim 1 , further comprising an organic solvent.5. The treatment liquid according to claim 4 , further comprising water claim 4 ,wherein the content of the water is 20% to 98% by mass with respect to the total mass of the treatment liquid, andthe content of the organic solvent is 1% to 40% by mass with respect to the total mass of the treatment liquid.6. The treatment liquid according to claim 4 , further comprising water claim 4 ,wherein the content of the water is 1% to 40% by mass with respect to the total mass of the treatment liquid, andthe content of the organic solvent is 20% to 98% by mass with respect to the total mass of the treatment liquid.7. The treatment liquid according to claim 1 , further comprising an inorganic acid.8. The treatment liquid according to claim 7 ,wherein the mass content ratio of the inorganic acid to the corrosion inhibitor is 0.01 to 10.9. The treatment liquid according to claim 1 , further comprising lead.10. The treatment liquid according to claim 7 , further comprising lead claim 7 ,{'sup': −10', '−4, 'wherein the mass ...

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Номер записи: 58

24-03-2022 дата публикации

CONTINUOUS SURFACE TREATMENT FOR COILS MADE OF ALUMINUM ALLOYS SHEETS

Номер: US20220090269A1

Автор: BOEHM Matthieu, Li Jichao

Принадлежит:

The invention relates to a continuous coil surface treatment process suitable for both a coil of a 5XXX aluminum alloy sheet and of a 6XXX aluminum alloy sheet. The process comprises the successive steps of etching the surface with a fluorine-free acidic solution; rinsing with deionized water; applying a conversion solution comprising titanium and zirconium, and drying. The invention surface treatment method is environmentally friendly and enables the production of the treated surfaces in an efficient and reliable manner for both 5XXX and 6XXX alloys. It is particularly adapted for the production of aluminum alloy sheets for the automotive industry. 1. A continuous coil surface treatment process suitable for both a coil of a 5XXX aluminum alloy sheet and of a 6XXX aluminum alloy sheet having a surface , said process successively comprising:a) optionally cleaning the surface of the aluminum alloy sheet;b) etching the surface of the optionally cleaned aluminum alloy sheet with a fluorine-free acidic solution;c) rinsing the surface of the etched aluminum alloy sheet with deionized water;d) applying to the surface of the etched aluminum alloy sheet a conversion solution comprising titanium and zirconium, with a zirconium to titanium weight ratio of from about 3.0 to about 5.0 optionally from 3.2 to 4.0;e) optionally rinsing the surface of the converted aluminum alloy sheet with deionized water; and,f) drying the surface of the aluminum alloy sheet.2. The process of claim 1 , wherein the conversion solution comprises titanium and zirconium claim 1 , with a titanium content of from about 20 to about 200 mg/l and optionally of from 60 to 140 mg/l.3. The process of wherein the conversion solution comprises hexafluotitanic acid claim 1 , hexafluozirconic acid claim 1 , hydrofluoric acid and optionally ammonium hydrogendifluoride.4. The process of claim 1 , wherein the fluorine-free acidic solution comprises sulfuric acid claim 1 , nitric acid claim 1 , phosphoric acid claim ...

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Номер записи: 59

24-03-2022 дата публикации

METAL PLATE, DEPOSITION MASK, AND MANUFACTURING METHOD THEREFOR

Номер: US20220090270A1

Автор: KIM Yoon Tai, PAIK Jee Heum

Принадлежит: LG INNOTEK CO., LTD.

Discussed is a deposition mask including a metal plate having a first surface and a second surface opposite to the first surface, wherein the metal plate including an invar, wherein the metal plate includes a plurality of through-hole, wherein the through-hole includes a first surface hole forming in the first surface, a second surface hole forming in the second surface, and a connecting part through which the first surface hole and the second surface hole communicate with each other, and wherein an angle formed by a virtual line connecting the end of the connecting part and the end of the second surface hole, and a virtual line extending in a direction parallel to the second face from the end of the second surface hole is 30 to 60 degrees. 1. A deposition mask comprising;a metal plate comprising a first surface and a second surface opposite to the first surface,wherein the metal plate comprises an invar,wherein the metal plate comprises a plurality of through-hole,wherein the through-hole comprises a first surface hole forming in the first surface, a second surface hole forming in the second surface, and a connecting part through which the first surface hole and the second surface hole communicate with each other, andwherein an angle formed by a virtual line connecting the end of the connecting part and the end of the second surface hole, and a virtual line extending in a direction parallel to the second face from the end of the second surface hole is 30 to 60 degrees.2. The deposition mask of claim 1 , wherein the angle formed by a virtual line connecting the end of the connecting part and the end of the second surface hole claim 1 , and a virtual line extending in a direction parallel to the second face from the end of the second surface hole is 32 to 38 degrees.3. The deposition mask of claim 1 , wherein a width of the first surface hole is smaller than a width of the second surface hole claim 1 ,wherein the width of the first surface hole is greater than a ...

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Номер записи: 60

24-03-2022 дата публикации

Treatment Methods And Solutions For Improving Adhesion Of Gold Electroplating On Metal Surfaces

Номер: US20220090284A1

Автор: Grove Collin M., Pesavento Paul V., Riemer Douglas P.

Принадлежит:

Treatment solutions and methods for improving adhesion of gold electroplating onto metal surfaces are provided herein. More specifically, the disclosure relates to micro-etching stainless steel surfaces using to remove any organic contamination and chromium oxide formed on the surface, neutralize and strip the surface of any iron content, and repassivate the surface with a thin chromium oxide layer, prior to gold electroplating of the stainless steel surfaces. 1. A method of treating stainless steel surfaces , comprising:{'sub': '4', 'etching at least a portion of one or more stainless steel surfaces with an etchant solution comprised of potassium permanganate (KMnO) and sodium hydroxide (NaOH); and'}subsequently neutralizing the at least portion of one or more stainless steel surfaces with a neutralizer solution comprised of ascorbic acid and citric acid.2. The method of wherein the concentration of potassium permanganate in the etchant solution is between about 0.1 M and 0.4 M claim 1 , and the sodium hydroxide is added until the etchant solution has a pH greater than 12.5.3. The method of wherein the concentration of ascorbic acid in the neutralizer solution is between about 75 g/L and 250 g/L claim 1 , and the concentration of citric acid is between about 50 g/L and 200 g/L.4. The method of wherein the at least portion of one or more stainless steel surfaces is exposed to the etchant solution for a period of time between 1 second and 5 minutes.5. The method of wherein the at least portion of one or more stainless steel surfaces is exposed to the etchant solution at a temperature between 5.0 and 85 degrees Celsius.6. The method of wherein the at least portion of one or more stainless steel surfaces is exposed to the neutralizer solution for a period of time between 1 and 300 seconds.7. The method of wherein the at least portion of one or more stainless steel surfaces is exposed to the neutralizer solution at a temperature between 25 and 85 degrees Celsius.8. The ...

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Номер записи: 61

19-03-2015 дата публикации

METAL COMPOSITE AND METHOD OF PREPARING THE SAME, METAL-RESIN COMPOSITE AND METHOD OF PREPARING THE SAME

Номер: US20150079384A1

Автор: Chen Liang, CHENG YUN, GUO QIANG, TANG Lili, Zhang Xiao

Принадлежит:

A metal composite, a method of preparing the metal composite, a metal-resin composite, and a method of preparing the metal-resin composite are provided. The metal composite comprises: a metal substrate comprising a first layer formed on a surface of the metal substrate and an anodic oxidation layer formed on the first layer. The first layer comprises a first pore having an average diameter of about 10 nanometers to about 1 millimeter, and the metal composite comprises aluminum alloy or aluminum. The anodic oxidation layer comprises a second layer contacted with the first layer of the metal substrate and a third layer formed on an outer surface of the second layer, and the second layer comprises a second pore having an average diameter of about 10 nanometers to about 800 microns, and the third layer comprises a third pore having an average diameter of about 10 nanometers to about 800 microns. 1. A method of preparing a metal composite , comprising:providing a metal substrate comprising an anodic oxidation layer on a surface thereof, the metal substrate comprising a first layer, the anodic oxidation layer comprising a second layer in contact with the first layer and a third layer formed on the second layer, the third layer comprising at least one third pore, and the metal substrate comprising an aluminum alloy or aluminum; andimmersing the metal substrate in an etching solution to form at least one first pore in the first layer and to form at least one second pore in the second layer.2. The method according to claim 1 , wherein the etching solution comprises H claim 1 , and the H has a concentration of about 0.55 mol/L to about 5.5 mol/L.3. The method according to claim 2 , wherein the etching solution further comprises Cl and/or PO.4. The method according to claim 2 , wherein the etching solution comprises a hydrochloric acid solution having a concentration ranging from about 2 wt % to about 20 wt %.5. The method according to claim 2 , wherein the etching solution ...

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Номер записи: 62

19-03-2015 дата публикации

Substrate for suspension, process for producing the same, suspension for magnetic head, and hard disk drive

Номер: US20150079424A1

Автор: Katsuya Sakayori, Kiyohiro Takachi, Shinji Kumon, Terutoshi Momose, Tsuyoshi Yamazaki, Yoichi Hitomi, Yoichi Miura

Принадлежит: DAI NIPPON PRINTING CO LTD

A substrate for suspension comprises a metallic substrate, an insulating layer formed on the metallic substrate, a conductor layer formed on the insulating layer, and a cover layer covering the conductor layer. The insulating layer and the cover layer are formed from different materials, whose coefficients of hygroscopic expansion are in the range between 3×10 −6 /% RH and 30×10 −6 /% RH. The difference between the coefficients of hygroscopic expansion of the two materials is 5×10 −6 /% RH or less.

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Номер записи: 63

31-03-2022 дата публикации

Aluminum-based metal-resin composite structure, aluminum-based metal member, method for manufacturing aluminum-based metal member, and method for manufacturing aluminum-based metal-resin composite structure

Номер: US20220097311A1

Автор: Junya Shimazaki

Принадлежит: Mitsui Chemicals Inc

An aluminum-based metal-resin composite structure ( 106 ) includes an aluminum-based metal member ( 103 ) in which a dendritic layer ( 103 - 2 ) is formed on at least a part of a surface, and a resin member ( 105 ) bonded to the aluminum-based metal member ( 103 ) via the dendritic layer ( 103 - 2 ) and formed of a thermoplastic resin composition, in which, when analysis is conducted with a Fourier transform infrared spectrophotometer (FTIR) on a surface ( 104 ) of a bonding portion with at least the resin member ( 105 ) in the aluminum-based metal member ( 103 ) and an absorbance of an absorption peak observed at 3400 cm −1 is defined as A 1 and an absorbance at 3400 cm −1 of a straight line connecting an absorbance at 3800 cm −1 and an absorbance at 2500 cm −1 is defined as A 0 , an absorbance difference (A 1 −A 0 ) is in a range of 0.03 or less.

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Номер записи: 64

29-03-2018 дата публикации

Metal resin composite

Номер: US20180085977A1

Автор: Toshiaki Ezaki

Принадлежит: Kaneka Corp

A metal resin composite includes a first member made of thermally conductive resin composition and a second member made of metal. The second member includes recesses having a number average inner diameter of 1 to 200 nm formed by a surface treatment. The first and second members are joined by injection molding the thermally conductive resin composition onto the second member. The thermally conductive resin composition has a thermal conductivity of 1 W/(m·K) or more in a surface direction, and includes a thermoplastic resin and an inorganic filler that is either inorganic particles having a thermal conductivity of 2 W/(m·K) or more and a volume average particle diameter of 1 to 700 μm, or inorganic fibers having a thermal conductivity of 1 W/(m·K) or more, a number average fiber diameter of 1 to 50 μm, and a number average fiber length of 6 mm or less.

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Номер записи: 65

29-03-2018 дата публикации

PROCESS FOR NiFe FLUXGATE DEVICE

Номер: US20180087161A1

Автор: EISSA Mona M., JENSON Mark, ZHANG Yousong

Принадлежит:

An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern. 1. A method of forming an integrated circuit , comprising the steps:forming a first dielectric layer on a semiconductor wafer;forming an etch stop layer on the first dielectric layer;forming a first stress relief material layer on the etch stop layer;forming a stack of magnetic core material composed of alternating layers of NiFe permalloy and AlN dielectric on the first stress relief material layer;forming a first pattern on the stack of magnetic core material and etching the stack with a wet etchant to remove the magnetic core material where exposed by the first pattern to form a magnetic core wherein the wet etchant is comprised of phosphoric acid, acetic acid, nitric acid and deionized water;overetching the magnetic core material so that the first pattern extends laterally beyond the magnetic core;removing the first pattern;forming a second stress relief material layer on the first stress relief material layer and on the top and sides of the magnetic core;forming a second pattern on the second stress relief material wherein the second pattern extends beyond the bottom of the magnetic core;etching the first and the second stress ...

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Номер записи: 66

21-03-2019 дата публикации

CONTINUOUS COIL PRETREATMENT PROCESS

Номер: US20190085463A1

Автор: Abbot Janell Lyn, Dennis Alfred M., Marinelli James M., Shoemaker Phillip C., Sullivan Shawn P.

Принадлежит:

Described herein is a continuous coil pretreatment process used to treat the surface of an aluminum alloy sheet or coil for subsequent deposition of an acidic organophosphorus compound. The process can include applying a cleaner to a surface of an aluminum sheet or a coil; etching the surface of the aluminum sheet or the coil with an acidic solution; rinsing the surface of the aluminum sheet or the coil with deionized water; applying to the surface of the aluminum sheet or the coil a solution of an acidic organophosphorus compound; rinsing the surface of the aluminum sheet or the coil with deionized water; and drying the surface of the aluminum sheet or the coil. 1. A continuous coil pretreatment process comprising:a) applying a cleaner to a surface of an aluminum sheet or a coil;b) etching the surface of the aluminum sheet or the coil with an acidic solution;c) rinsing the surface of the aluminum sheet or the coil with deionized water;d) applying to the surface of the aluminum sheet or the coil a solution of an acidic organophosphorus compound;e) rinsing the surface of the aluminum sheet or the coil with deionized water; and,f) drying the surface of the aluminum sheet or the coil.2. The process of claim 1 , wherein the acidic organophosphorus compound is a vinylphosphonic acid-acrylic acid copolymer.3. The process of claim 1 , wherein the acidic organophosphorus compound is A951.4. The process of claim 1 , wherein the concentration of the acidic organophosphorus compound is about 0.4 wt. % to about 10 wt. %.5. The process of claim 1 , wherein the concentration of the acidic organophosphorus compound is about 0.6 wt. % to about 5 wt. %.6. The process of claim 1 , wherein the concentration of the acidic organophosphorus compound is about 0.7 wt. % to about 3 wt. %.7. The process of claim 1 , wherein the concentration of the acidic organophosphorus compound is about 0.8 wt. % to about 1.0 wt. %.8. The process of claim 1 , wherein the acidic solution comprises sulfuric ...

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Номер записи: 67

19-03-2020 дата публикации

ETCHING COMPOSITION, A METHOD OF ETCHING A METAL BARRIER LAYER AND A METAL LAYER USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20200087798A1

Автор: Han Hoon, KIM Jungah, KIM Keonyoung, Lee Hyosan, Lee Jin Uk, LEE Jinwoo, LIM Jung Hun, PARK Mihyun

Принадлежит:

Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof. 2. The method of claim 1 , wherein the metal layer includes at least one of tungsten claim 1 , aluminum claim 1 , copper claim 1 , molybdenum claim 1 , or cobalt.3. The method of claim 1 , wherein the metal barrier layer includes at least one of a titanium nitride (TiN) layer claim 1 , a tantalum nitride (TaN) layer claim 1 , a tungsten nitride (WN) layer claim 1 , a nickel nitride (NiN) layer claim 1 , a cobalt nitride (CoN) layer claim 1 , or a platinum nitride (PtN) layer.4. The method of claim 1 , whereinan amount of the oxidant is from 10% to 30% by weight relative to a total weight of the etching composition, andan amount of the metal etching inhibitor is from 0.01% to 10% by weight relative to the total weight of the etching composition.5. The method of claim 1 , whereinthe etching composition further includes water, andan amount of the water is from 10% to 30% by weight relative to a total weight of the etching composition.6. A method of etching a titanium nitride layer and a tungsten layer claim 1 , the method comprising:forming the titanium nitride layer and the tungsten layer on a substrate; andusing an etching composition to etch the titanium nitride layer and the tungsten layer,wherein the etching composition includes:an oxidant selected ...

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Номер записи: 68

01-04-2021 дата публикации

Method for manufacturing kitchen knife by using multilayer material, and kitchen knife manufactured thereby

Номер: US20210094132A1

Автор: Jeong Wook Han, Nam Chul Cho, Sung Mo Cho

Принадлежит: Industry Academic Cooperation Foundation of Kongju National University

This application relates to a method of manufacturing a knife using a multilayer material. In one aspect, the method includes preparing a multilayer material for manufacturing a knife, and heating and then forging the multilayer material to form a knife-shaped structure including a blade part and a handle part. The method also includes grinding the blade part to form a sharpened knife-edge and applying mud, including kaolin and white clay, to an entire surface of the knife-shaped structure and removing the mud applied to the blade part. The method further includes heating the knife-shaped structure applied with the mud, and quenching the heated knife-shaped structure through oil-cooling. The method further includes etching a surface of the quenched knife-shaped structure to form a pattern on the surface and grinding the surface-etched knife-shaped structure to form a knife having a final shape.

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Номер записи: 69

12-05-2022 дата публикации

COMPOSITIONS AND METHODS FOR CREATING NANOSCALE SURFACE GEOMETRIES ON METALS OF AN IMPLANTABLE DEVICE

Номер: US20220145474A1

Автор: Incerpi Jordan, Schutzer Daniel Jon, Vidra Michael

Принадлежит:

Compositions and methods for etching a nanoscale geometry on a metal or metal alloy surface are disclosed. Such surfaces, when included on an implantable medical device, enhance healing after surgery. When included on a bone contacting medical implant, the nanoscale geometry may enhance osseointegration. When included on a tissue contacting device, the nanoscale geometry may enhance endothelial cell attachment, proliferation, and restoration of a healthy endothelial surface. 1. A composition for etching a nanoscale geometry into a surface of a body implantable device formed of a metal or metal alloy , the composition comprising:{'sub': 3', '2', '4', '3', '4, 'at least one mineral acid selected from the group consisting of hydrochloric acid (HCl), nitric acid (HNO), sulfuric acid (HSO), phosphoric acid (HPO), and hydrofluoric acid (HF); and'}component metals of the body implantable device,wherein the body implantable device is a bone-contacting device and the nanoscale geometry enhances osseointegration when the bone-contacting device is implanted adjacent living bone, orwherein the body implantable device is a tissue-contacting device and the nanoscale geometry enhances endothelial attachment and proliferation when the tissue-contacting device is implanted adjacent tissue.2. The composition of claim 1 , wherein the metal or metal alloy of the body implantable device comprises stainless steel claim 1 , and the at least one mineral acid comprises 1.2N-3.0N hydrochloric acid (HCl) and 2.0N-4.0N nitric acid (HNO).3. The composition of claim 2 , comprising 0.1N-0.3N phosphoric acid (HPO) and 0.1N-0.3N hydrofluoric acid (HF).4. The composition of claim 2 , comprising 3.75 g/l-90 g/l of one or more of chromium (Cr) claim 2 , molybdenum (Mo) claim 2 , and nickel (Ni).5. The composition of claim 4 , comprising the component metals Cr claim 4 , Mo claim 4 , and Ni provided in a relative ratio that corresponds to a ratio of the metals in the stainless steel.6. The composition ...

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Номер записи: 70

14-04-2016 дата публикации

METHOD FOR TREATING A SURFACE AND DEVICE IMPLEMENTED

Номер: US20160102012A1

Автор: Belleville Philippe, Lambert Sébastien, Pilon Fabien, Rondeau Olivier, Thomas Sandrine

Принадлежит:

The present invention relates to a method for treating a surface of an object which comprises the steps consisting of bringing the surface to be treated in contact with a diffusion intermediate and then maintaining said surface to be treated in contact with said diffusion intermediate without any movement relatively to each other, said diffusion intermediate being impregnated with a corrosive solution prior to contacting or during said contacting. The present invention also relates to a device implemented during such a method. 2. The method according to claim 1 , wherein said surface is a surface in a metal claim 1 , a noble metal claim 1 , an oxidized metal claim 1 , a transition metal or a metal alloy.3. The method according to claim 1 , wherein said surface is a surface in silicon (Si) claim 1 , in silicon carbide (SiC) claim 1 , in gallium arsenide (AsGa) claim 1 , in gallium (Ga) claim 1 , in indium phosphide (InP) claim 1 , in mixtures thereof or alloys thereof.4. The method according to claim 1 , wherein said surface is a surface in silicon dioxide (SiO) claim 1 , in aluminium oxide (AlO) claim 1 , in magnesium oxide (MgO) claim 1 , in glass claim 1 , in silica glass claim 1 , in ceramic claim 1 , in diamond claim 1 , in mixtures thereof or in alloys thereof.5. The method according to claim 1 , wherein said corrosive solution is an acid corrosive solution selected from among hydrochloric acid (HCl) claim 1 , nitric acid (HNO) claim 1 , hydrofluoric acid (HF) claim 1 , sulfuric acid (HSO) claim 1 , phosphoric acid (HPO) claim 1 , ammonium fluoride (NHF) claim 1 , ammonium difluoride (NHHF) claim 1 , an aqueous HCl solution claim 1 , an aqueous HNOsolution claim 1 , an aqueous HF solution claim 1 , an aqueous HSOsolution claim 1 , an aqueous HPOsolution claim 1 , an aqueous NHF solution claim 1 , an aqueous NHHFsolution and mixtures thereof.6. The method according to claim 1 , wherein said corrosive solution is an alkaline corrosive solution selected from an ...

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Номер записи: 71

12-05-2022 дата публикации

METAL PLATE FOR DEPOSITION MASK, AND DEPOSITION MASK AND MANUFACTURING METHOD THEREFOR

Номер: US20220149283A1

Автор: Cho Su Hyeon, HAN Tae Hoon, Kim Hae Sik, LEE Sang Beum, LEE Sang Yu, Seong Dong Mug, SON Hyo Won, YUN Jong Min

Принадлежит:

A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region. 1. A deposition mask comprising;a metal plate comprising a first surface and a second surface opposite to the first surface,wherein the metal plate comprises a plurality of through-hole,wherein the through-hole comprises a first surface hole forming in the first surface, a second surface hole forming in the second surface, and a connecting part through which the first surface hole and the second surface hole communicate with each other,wherein a width of the first surface hole is smaller than a width of the second surface hole,{'b': 1', '3, 'wherein an angle formed by a virtual line connecting the end P of the first surface hole and the end P of the second surface hole, and the first surface is 70 degrees or less,'}{'b': 1', '3', '2, 'wherein an angle θ formed by a virtual line connecting the end P of the second surface hole and the end P of the connecting part and a virtual line extending parallel to the first surface from the end of the connecting part is 20 to 70 degrees.'}213. The deposition mask of claim 1 , wherein the angle formed by a virtual line connecting the end P ...

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Номер записи: 72

08-04-2021 дата публикации

METHOD FOR MANUFACTURING METAL PLATE

Номер: US20210102268A1

Автор: ENDO Shogo, HATSUTA Chiaki, Ikenaga Chikao, MATSUURA Sachiyo, NARITA Asako, OKA Hiroki

Принадлежит: Dai Nippon Printing Co., Ltd.

A method for manufacturing a metal plate, the metal plate including a first surface and a second surface positioned on the opposite side of the first surface, may include a step of rolling a base metal having an iron alloy containing nickel to produce the metal plate. The metal plate may include particles containing as a main component an element other than iron and nickel. In a sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) regarding the particles may be satisfied: 1. A method for manufacturing a metal plate used for manufacturing a deposition mask , the metal plate including a first surface and a second surface positioned on the opposite side of the first surface , the method comprising:a step of rolling a base metal having an iron alloy containing nickel to produce the metal plate, wherein:the metal plate comprises particles containing as a main component an element other than iron and nickel; [{'sup': '3', '(1) the number of the particles having an equivalent circle diameter of 1 μm or more is 50 or more and 3000 or less per 1 mmin the sample; and'}, {'sup': '3', '(2) the number of the particles having an equivalent circle diameter of 3 μm or more is 50 or less per 1 mmin the sample;'}], 'in a sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) regarding the particles are satisfieda first ratio of the metal plate is 70% or more;the first ratio is a ratio of a first quantity to a total quantity;{'sup': '3', 'the total quantity is the number of the particles per 1 mmin the sample, the particles having an equivalent circle diameter of 1 μm or more; and'}{'sup': '3', 'the first quantity is the number of the particles per 1 mmin the sample, the particles having an equivalent circle diameter of 1 μm or more and less than 3 μm.'}2. The method for manufacturing a metal plate according to claim 1 , comprising a surface treatment step of ...

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Номер записи: 73

04-04-2019 дата публикации

ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS

Номер: US20190103266A1

Автор: "DUrzo Lucia", Blomberg Tom E., de Roest David, Lindroos Linda, Maes Jan Willem, Matero Raija H., Pierreux Dieter, Sprey Hessel, van der Jeugd Kees

Принадлежит:

Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl, antimony alkylamines, and antimony alkoxides, such as Sb(OEt). The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers. 1. (canceled)2. A vapor deposition process for depositing an antimony oxide thin film comprising alternately and sequentially contacting a substrate in a reaction chamber with a vapor phase antimony source and a vapor phase oxygen source , wherein the antimony oxide thin film can be etched selectively relative to SiO , Si , or AlOin a wet etch comprising concentrated HCl , HO , or tartaric acid , or relative to SiN or SiOin a dry etch comprising Cl-containing plasma , F-containing plasma , Cl-plasma , or a mixture of CHFand Cl-plasma.3. The process of claim 2 , wherein the antimony oxide has an etch selectivity of at least 75% relative to SiO claim 2 , Si claim 2 , or AlOwhen a wet etch is performed.4. The process of claim 2 , wherein the antimony oxide has an etch selectivity of at least 50% relative to SiN or SiOwhen a dry etch is performed.5. The process of claim 2 , wherein the vapor phase antimony source has the formula SbXA claim 2 , wherein X is a halide claim 2 , z is from 1 to 3 claim 2 , and A is a ligand comprising alkylamine claim 2 , a halide different from X claim 2 , or an amine claim 2 , silyl claim 2 , alkoxide or alkyl group and the antimony source has an oxidation state of +III or +V.6. The process of claim 5 , wherein the vapor phase antimony source is selected from the group consisting of SbCl claim 5 , SbBr claim 5 , SbF claim 5 , or SbI.7. The process of claim 2 , wherein the vapor phase antimony source has the formula Sb(NR2)A claim 2 , wherein x is from 1 to 3 claim 2 , wherein ...

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Номер записи: 74

20-04-2017 дата публикации

METHOD FOR PREPARING TITANIUM-CONTAINING IMPLANT BY USING ENVIRONMENTALLY-FRIENDLY ETCHING COMPOSITION

Номер: US20170107627A1

Автор: Kim Kyo Han, Kwon Tae Yub, Son Jun Sik

Принадлежит:

The present invention provides a method for preparing an implant including preparing a mixed etching composition including hydrogen peroxide and a water-soluble carbonate compound and oxidatively etching an implant made of titanium or a titanium alloy by immersing the same in the etching composition; a titanium or titanium alloy implant prepared by oxidative etching with a mixed etching composition including hydrogen peroxide and a water-soluble carbonate compound; and a composition for treating surface of an implant containing hydrogen peroxide and a water-soluble carbonate compound. Further, the present invention relates to a titanium or titanium alloy implant which is prepared by oxidative etching with a mixed etching composition including hydrogen peroxide and a basic solution and on which surface bumps having continuous or discontinuous line-shaped open channel structures in nanoscale are irregularly formed, and a preparation method thereof. The surface of the titanium alloys treated with the mixed etching composition including hydrogen peroxide and a carbonate compound or the etching composition containing hydrogen peroxide and a basic solution of the present invention includes micrometer-sized bumps and channel-shaped nanometer-sized bumps, and thus has an increased surface area, and can not only improve wettability, but also effectively promote cell proliferation and osteocyte differentiation. In addition, the composition includes no chemical compounds such as a strong acid, etc. and is thus environmentally friendly, and such compounds can be prevented from remaining on the surface, which can improve biocompatibility, and therefore, the composition can be useful for implant surface treatment. 1. A method for preparing an implant comprising: preparing a mixed etching composition comprising hydrogen peroxide and a water-soluble carbonate compound; and oxidatively etching an implant made of titanium or a titanium alloy by immersing the same in the etching ...

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Номер записи: 75

29-04-2021 дата публикации

ETCHANT COMPOSITION AND METHOD FOR ETCHING

Номер: US20210123142A1

Автор: Kouno Ryou, Ohwada Takuo

Принадлежит:

An etchant composition that is capable of batch etching treatment of a tungsten film and a titanium nitride film and a method for etching using said etchant composition are provided. The etching composition of the present invention is an etchant composition comprising nitric acid and water for batch etching treatment of a tungsten film and a titanium nitride film. 1. A method for batch etching tungsten film and titanium nitride film , said method comprising treating the tungsten film and titanium nitride film via batch etching with an etchant composition comprising a nitric acid and water.2. The method of wherein the etchant composition further comprises at least one or a sulfuric acid and/or an aliphatic sulfonic acid.3. The method of claim 2 , wherein the aliphatic sulfonic acid is a methanesulfonic acid.4. The method of wherein the etchant composition further comprises a phosphoric acid.5. The method of claim 1 , wherein the temperature of the etchant composition at which the etching is performed is 50° C. or higher.6. The method of for generating a pattern having a three-dimensional structure. This patent application is a divisional of U.S. patent application Ser. No. 16/316,054 filed Jan. 8, 2019 which is the U.S. National Stage Application of International Application No. PCT/JP2017/024971, filed Jul. 7, 2017, which claims the benefit of priority from Japanese Patent Application No. 2016-136336, filed Jul. 8, 2016, teachings of each of which are herein incorporated by reference in their entirety.The present invention relates to an etchant composition for batch etching treatment of tungsten film and titanium nitride film, and a method for etching using said etchant composition.Tungsten and titanium nitride are both widely used for electric devices such as a semiconductor element. They are deposited as a film having film properties that are appropriate for a desired electric device, processed into a predetermined pattern, and used. As a method for processing ...

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Номер записи: 76

02-04-2020 дата публикации

METHOD OF METALLIC COMPONENT SURFACE MODIFICATION FOR ELECTROCHEMICAL APPLICATIONS

Номер: US20200102642A1

Автор: GONTARZ Gerald A., Tao Yong, WANG CONGHUA, Zhang Lin

Принадлежит: TREADSTONE TECHNOLOGIES, INC.

Method for forming a metallic component surface to achieve lower electrical contact resistance. The method comprises modifying a surface chemical composition and creating a micro-textured surface structure of the metallic component that includes small peaks and/or pits. The small peaks and pits have a round or irregular cross-sectional shape with a diameter between 10 nm and 10 microns, a height/depth between 10 nm and 10 microns, and a distribution density between 0.4 million/cmand 5 billion cm. 134-. (canceled)35. A method for forming a metallic component surface to achieve surface lower electrical contact resistance , comprising:modifying a surface of the metallic component using a cathodic arc deposition process to form peaks on the metallic component surface to be high-pressure contact points with other solid components of a device of which the metallic component is a part;{'sup': '2', 'wherein a diameter of the peaks is between 0.1 microns and 10 microns, and an electrical contact resistance of the metallic component with other solid components is less than 10 mΩ·cm.'}36. The method of claim 35 , wherein each peak has a round or irregular shape.37. The method of claim 35 , further comprising using the metallic component with the modified surface as one or more metal plates of a fuel cell.38. A metallic component having a superhydrophilic surface with low electrical contact resistance claim 35 , said component comprising pits on the surface claim 35 , the pits comprise holes having a diameter between 5 nm to 20 microns.39. The metallic component of claim 38 , wherein the surface comprises additional material formed thereon and the pits are naturally formed between the additional material.40. The metallic component of claim 39 , wherein the additional material comprises material thermally sprayed on to the surface or added to the surface by an additive manufacturing process.41. The metallic component of claim 38 , wherein the pits are formed in areas where ...

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Номер записи: 77

26-04-2018 дата публикации

MANUFACTURING METHOD OF METAL/RESIN COMPOSITE STRUCTURE AND MANUFACTURING METHOD OF SURFACE-ROUGHENED STEEL MEMBER

Номер: US20180111354A1

Автор: Inoue Goro, Okumura Hiroshi, Sugita Haruka

Принадлежит: Mitsui Chemicals, Inc.

A manufacturing method of a metal/resin composite structure of the invention is a manufacturing method for manufacturing a metal/resin composite structure obtained by bonding a steel member and a thermoplastic resin member formed of a thermoplastic resin or a resin composition including the thermoplastic resin, to each other, the method comprising. The manufacturing method of a metal/resin composite structure includes a first step of applying a metal plating layer that is formed of a metal having smaller ionization tendency than ionization tendency of iron and including a roughened surface on a side opposite to a surface to be in contact with the steel member, to at least a bonding portion surface of the steel member to be bonded to the thermoplastic resin member; 1. A manufacturing method of a metal/resin composite structure obtained by bonding a steel member and a thermoplastic resin member formed of a thermoplastic resin or a resin composition including the thermoplastic resin , to each other , the method comprising:a first step of applying a metal plating layer that is formed of a metal having smaller ionization tendency than ionization tendency of iron and including a roughened surface on a side opposite to a surface to be in contact with the steel member, to at least a bonding portion surface of the steel member to be bonded to the thermoplastic resin member;a second step of processing at least the surface of the metal plating layer with inorganic acid; anda step of molding the thermoplastic resin member and bonding the steel member and the thermoplastic resin member, so that at least a part of the thermoplastic resin member is in contact with the bonding portion surface of the steel member.2. The manufacturing method of a metal/resin composite structure according to claim 1 ,wherein the metal plating layer includes a copper plating.3. The manufacturing method of a metal/resin composite structure according to claim 2 ,wherein the first step includes a step of ...

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Номер записи: 78

27-04-2017 дата публикации

METHOD FOR MANUFACTURING A METALLIC COMPONENT WHICH IS POSSIBLE TO PICKLE

Номер: US20170113274A1

Автор: BERGLUND Tomas, WEDENSTRAND Jouni

Принадлежит:

A method for manufacturing a metallic component includes the steps of providing a component preform of a metallic material, which constitutes the metallic component and a shaping means which defines the shape of the metallic component. The component preform is subjected to Hot Isostatic Pressing for a predetermined time at a predetermined temperature and a predetermined pressure. The shaping means is removed by contacting the component preform with a pickling agent. The step of providing the component preform includes providing the component preform with an acid resistant metal layer, wherein the acid resistant metal layer is applied with electroplating and wherein the acid resistant metal layer is arranged such that it protects the metallic material from contact with the pickling agent. 1. A method for manufacturing a metallic component comprising the steps of:providing a component preform of a metallic material which constitutes the metallic component and shaping means which defines the shape of the metallic component;subjecting the component preform to Hot Isostatic Pressing for a predetermined time at a predetermined temperature and a predetermined pressure;removing the shaping means by contacting said component preform with a pickling agent, wherein the step of providing the component preform includes providing the component preform with an acid resistant metal layer, wherein the acid resistant metal layer is applied with electroplating and wherein the acid resistant metal layer is arranged such that it protects the metallic material from contact with the pickling agent.2. The method according to claim 1 , wherein the acid resistant metal layer contains nickel metal having a nickel content of at least 95 wt % remainder naturally occurring impurities of which the content of phosphorus is <5 wt %.3. The method according to claim 1 , wherein the acid resistant metal layer is chromium metal.4. The method according to claim 1 , wherein the acid resistant metal layer ...

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Номер записи: 79

13-05-2021 дата публикации

METAL PLATE, DEPOSITION MASK, AND MANUFACTURING METHOD THEREFOR

Номер: US20210140061A1

Автор: KIM Yoon Tai, PAIK Jee Heum

Принадлежит: LG INNOTEK CO., LTD.

A metal plate for use in manufacture of a deposition mask according to an embodiment is a multilayer metal plate having a thickness of 30 μm or less and containing an alloy of nickel (Ni) and iron (Fe), and comprises: a first outer portion occupying an area corresponding to 20% or less of the total thickness of the metal plate from one surface thereof; a second outer portion occupying an area corresponding to 20% or less of the total thickness from the other surface opposite to the one surface; and a central portion except the first outer portion and the second outer portion, wherein the first outer portion and the second outer portion each have a larger nickel content than that of the central portion. The multilayer metal plate for use in manufacture of a deposition mask according to an embodiment is a multilayer metal plate containing an alloy of nickel (Ni) and iron (Fe), and is manufactured by a method comprising the steps of: forming a nickel-plated layer; forming an iron-plated layer on the nickel-plated layer; forming a multilayer-plated plate in which the nickel-plated layer and the iron-plated layer are alternately and repeatedly arranged; and heat-treating the multilayer-plated plate at a temperature of 300° C. or higher. 110-. (canceled)11. A multi-layered metal plate used for manufacturing a mask for deposition has a thickness of 30 μm or less , the multi-layered metal plate comprising:an alloy of nickel (Ni) and iron (Fe);a first outer portion occupying a region of 20% or less of the total thickness from one surface of the multi-layered metal plate;a second outer portion occupying a region of 20% or less of the total thickness from the other surface opposite to the one surface; anda central portion other than the first outer portion and the second outer portion,wherein nickel contents of the first outer portion and the second outer portion are greater than that of the central portion, and the nickel contents of the first and second outer portions are 40 ...

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Номер записи: 80

09-04-2020 дата публикации

ETCHING METHOD

Номер: US20200109475A1

Автор: HAYASHIZAKI Masahiro, OGINO Yuki, Otani Minoru, Tojima Mami

Принадлежит:

An etching method is capable of etching titanium selectively in the presence of copper. An etching liquid used in the method is low in toxicity and excellent in storage stability. The etching liquid includes at least one acid, such as, sulfuric acid, hydrochloric acid, or trichloroacetic acid, and at least one organic sulfur compound, such as a thioketone compound or a thioether compound. 1. A method for etching titanium selectively in the presence of copper comprising: at least one acid selected from the group consisting of sulfuric acid, hydrochloric acid, and trichloroacetic acid; and', 'at least one organic sulfur compound selected from the group consisting of a thioketone compound and a thioether compound., 'etching the titanium in the presence of copper without etching the copper by exposing the titanium to an etching liquid comprising2. The etching method according to claim 1 , wherein the thioketone compound is at least one selected from the group consisting of thiourea claim 1 , diethylthiourea claim 1 , and trimethylthiourea.3. The etching method according to claim 1 , wherein the thioether compound is at least one selected from the group consisting of methionine claim 1 , ethionine claim 1 , and 3-(methylthio)propionic acid.4. The etching method according to claim 1 , wherein the etching liquid further comprises an α-hydroxycarboxylic acid claim 1 , and/or a salt thereof.5. The etching method according to claim 4 , wherein the α-hydroxycarboxylic acid is at least one selected from the group consisting of tartaric acid claim 4 , malic acid claim 4 , citric acid claim 4 , lactic acid claim 4 , and glyceric acid.6. The etching method according to claim 1 , wherein the concentration of the acid(s) is from 20 to 70% by weight claim 1 , and the concentration of the organic sulfur compound(s) is from 0.01 to 10% by weight.7. The etching method according to claim 4 , wherein the concentration of the α-hydroxycarboxylic acid and/or the salt thereof is from 0.2 to ...

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Номер записи: 81

04-05-2017 дата публикации

CYLINDER ETCHING APPARATUS

Номер: US20170120573A1

Автор: Shigeta Tatsuo

Принадлежит:

Provided is a cylinder etching apparatus, which is capable of performing etching more uniformly than in the prior art and is also capable of solving a problem in that a remaining etching solution in an etching solution supply tube flows down therefrom. The cylinder etching apparatus includes: a processing bath; chuck means; at least one etching solution supply tube; and a plurality of ejection nozzles juxtaposed in the etching solution supply tube and configured to eject an etching solution from the etching solution supply tube. The etching solution ejected from the ejection nozzles through the etching solution supply tube is caused to impinge against a surface of the cylinder to be processed, to thereby etch the surface of the cylinder to be processed. The ejection nozzles are oriented obliquely upward with respect to a horizontal direction. An ejection direction of the ejection nozzle is oriented toward a rotation center of the cylinder to be processed from a position that is obliquely downward of the cylinder to be processed. The ejection nozzles are arranged so as to be brought closer to and away from the surface of the cylinder to be processed. 1. A cylinder etching apparatus , comprising:a processing bath;a chuck means for rotatably holding both ends of a cylinder to be processed in a longitudinal direction of the cylinder to be processed and for accommodating the cylinder to be processed in the processing bath;at least one etching solution supply tube arranged at a predetermined distance from an outer peripheral surface of the cylinder to be processed along the longitudinal direction in parallel to the outer peripheral surface of the cylinder to be processed along the longitudinal direction; anda plurality of ejection nozzles juxtaposed in the at least one etching solution supply tube and said plurality of ejection nozzles being configured to eject an etching solution from the at least one etching solution supply tube, wherein the etching solution ejected ...

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Номер записи: 82

16-04-2020 дата публикации

MEDICAL IMPLANTS WITH IMPROVED ROUGHNESS

Номер: US20200113700A1

Автор: OGAWA Takahiro

Принадлежит:

A medical implant has a hierarchical surface roughness and includes an implant body, which includes a combination of meso-scale surface features, micro-scale surface features, and nano-scale surface features. 1. A medical implant having a hierarchical surface roughness , comprising:an implant body including a combination of meso-scale surface features, micro-scale surface features, and nano-scale surface features.2. The medical implant of claim 1 , wherein the meso-scale surface features have sizes in a range of 5 μm to 1 mm.3. The medical implant of claim 2 , wherein the meso-scale surface features have sizes in a range of 5 μm to 200 μm.4. The medical implant of claim 1 , wherein the meso-scale surface features include protruding structures.5. The medical implant of claim 4 , wherein the protruding structures have lateral sizes in a range of 5 μm to 200 μm claim 4 , and heights in a range of 5 μm to 200 μm.6. The medical implant of claim 4 , wherein the protruding structures include cone-shaped claim 4 , nodule-shaped claim 4 , pyramid-shaped claim 4 , trapezoidal claim 4 , hemispherical claim 4 , or hemispheroidal structures.7. The medical implant of claim 1 , wherein the micro-scale surface features have sizes in a range of 1 μm to 5 μm.8. The medical implant of claim 1 , wherein the nano-scale surface features have sizes in a range up to 1 μm.9. The medical implant of claim 8 , wherein the nano-scale surface features have sizes in a range of 10 nm to 1 μm.10. The medical implant of claim 1 , wherein the nano-scale surface features include protruding structures.11. The medical implant of claim 1 , wherein the nano-scale surface features include compartmental structures.12. The medical implant of claim 1 , wherein the nano-scale surface features and the micro-scale surface features are superimposed onto the meso-scale surface features.13. The medical implant of claim 1 , wherein the medical implant is a metallic implant.14. The medical implant of claim 13 , ...

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Номер записи: 83

25-08-2022 дата публикации

Etching compositions and methods for fabricating semiconductor devices by using the same

Номер: US20220267673A1

Автор: Hyo Joong YOON, Hyo San LEE, Jung Min Oh, Min Hyung Cho, Min Ju IM, Sang Won Bae

Принадлежит: Dongwoo Fine Chem Co Ltd, SAMSUNG ELECTRONICS CO LTD

Etching compositions are provided. The etching compositions can be used for etching cobalt. The etching compositions may include a chelator, water, an oxidizer, and an organic solvent, and the chelator may include an organic acid, an amine compound and/or a polyhydric alcohol. Water may be present in an amount of 1 wt % to 10 wt % based on a total weight of the etching composition.

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Номер записи: 84

25-08-2022 дата публикации

COMPOSITION, ITS USE FOR ACID PICKLING OF MAGNESIUM ALLOYS AND METHOD FOR ACID PICKLING OF MAGNESIUM ALLOYS

Номер: US20220267907A1

Автор: COTINOT Jérémie Christian André

Принадлежит:

Composition, characterized in that: —it comprises, in a solution of demineralized water: between 10 and 80, preferably between 15 and 20, more preferably 17, g/l of a composition of phosphoric acid HPO, and between 2 and 15, preferably between 4 and 8, more preferably 6, g/l of a composition of potassium permanganate KMnO, —the weight ratio HPO/KMnOis between 1.5 and 10, preferably between 1.8 and 5, mote preferably equal to 2.8, —said composition has a pH between 2.4 and 3, preferably 2.5. 1. A composition , characterised in that:it comprises, in a solution of water:{'sub': 3', '4, 'between 10 and 80 g/l of a composition of phosphoric acid HPO, and'}{'sub': '4', 'between 2 and 15 g/l of a composition of potassium permanganate KMnO,'}{'sub': 3', '4', '4, 'the weight ratio HPO/KMnOis between 1.5 and 10, preferably between 1.8 and 5, most preferably equal to 2.8,'}said composition has a pH between 2.4 and 3, preferably 2.5.2. The composition according to claim 1 , wherein:it comprises:{'sub': 3', '4, 'between 10 and 30 g/l, preferably between 15 and 20 g/l of a composition of phosphoric acid HPO, and'}{'sub': '4', 'between 4 and 8 g/l of a composition of potassium permanganate KMnO.'}3. The composition according to claim 1 , whereinit comprises:{'sub': 3', '4, '17 g/l of a composition of phosphoric acid HPO, and'}{'sub': '4', '6 g/l of a composition of potassium permanganate KMnO,'}said composition has a pH of 2.5.4. The composition according to claim 1 , wherein:it comprises:{'sub': 3', '4, 'between 20 and 80 g/l of a composition of phosphoric acid HPO, and'}{'sub': 3', '4', '4, 'the weight ratio HPO/KMnOis between 2.5 and 10, preferably between 2.5 and 5, most preferably equal to 2.8.'}5. The composition according to claim 1 , wherein it further comprises an agent for adjusting the pH different from nitric acid HNO claim 1 , preferably selected from acetic acid CHCOOH claim 1 , sulfuric acid HSO claim 1 , phosphoric acid HPO claim 1 , sodium hydroxide NaOH and ...

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Номер записи: 85

02-05-2019 дата публикации

SURFACE TREATMENT METHOD OF ALUMINUM FOR BONDING DIFFERENT MATERIALS

Номер: US20190127857A1

Автор: KONG Byung-Seok, Yoo Chang-Yeol

Принадлежит:

Disclosed is a method of fabricating an aluminum alloy member for bonding different materials. The method may include etching the aluminum alloy member with one or more etching solutions, and forming one or more undercuts on a surface of the aluminum alloy member. 1. A method of fabricating an aluminum alloy member , comprising:etching a surface of the aluminum alloy member using one or more etching solutions; andforming one or more undercuts on the surface of the aluminum alloy member.2. The method of claim 1 , wherein the etching the surface of the aluminum alloy member is repeated one or more times.3. The method of claim 1 , wherein the one or more undercuts are formed by:{'sub': '3', 'a first etching of immersing the aluminum alloy member in an CrOaqueous solution;'}{'sub': '3', 'a second etching of immersing the aluminum alloy member in an FeClaqueous solution; and'}a third etching of immersing the aluminum alloy member in an HCl aqueous solution.4. The method of claim 3 , wherein the first etching comprises immersing the aluminum alloy member in the CrOaqueous solution of at a temperature of about 20 to 30° C.5. The method of claim 4 , wherein the first etching comprises immersing the aluminum alloy member in the CrOaqueous solution for about 3 minutes.6. The method of claim 4 , wherein the CrOaqueous solution has a concentration of CrOof about 150 g/l to 200 g/l.7. The method of claim 3 , wherein the second etching comprises immersing the aluminum alloy member in the FeClaqueous solution of a temperature of about 20 to 30° C.8. The method of claim 7 , wherein the second etching comprises immersing the aluminum alloy member in the FeClaqueous solution for about 0.5 to 1 minutes.9. The method of claim 7 , wherein the FeClaqueous solution has a concentration of FeClof about 50 g/l -150 g/l.10. The method of claim 3 , wherein the third etching comprises immersing the aluminum alloy member in the HCl aqueous solution of a temperature of about 20 to 30° C.11. The ...

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Номер записи: 86

07-08-2014 дата публикации

Composite of metal and resin and method for manufacturing the same

Номер: US20140217064A1

Автор: Masanori Naritomi, Naoki Andoh

Принадлежит: Taisei Purasu Co Ltd

It is an object to manufacture a composite of a metal part and a resin composition part, which is improved so as to securely join and integrate stainless steel and a resin. A stainless steel part whose surface has been suitably roughened by chemical etching or the like can be used. An integrated product is obtained by inserting a stainless steel piece 1 with its surface treated into a cavity formed by a movable-side mold plate 2 and a fixed-side mold plate 3 of a metallic mold for injection molding 10 and injecting a specific resin. PBT, PPS or an aromatic polyamide resin can be used as the main resin component of a resin composition 4 that is used. High injection joining strength is obtained if the resin composition contains, as an auxiliary component, PET and/or a polyolefin resin in the case of PBT, a polyolefin resin in the case of PPS and an aliphatic polyamide resin in the case of an aromatic polyamide resin.

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Номер записи: 87

17-05-2018 дата публикации

OXIDE FILM REMOVING METHOD

Номер: US20180135186A1

Автор: HIRAMATSU Noriyuki, MORII Osamu, SASAKI Wataru, TAMURA Tomoko

Принадлежит:

An oxide film removing method is a method of removing an oxide film formed in a surface of a superalloy part that contains a first metal as a base metal and a second metal different from the first metal. The oxide film removing method includes arranging the superalloy part inside a heating chamber; reducing the oxide of the base metal to the base metal by heating the inside of the heating chamber in a condition that a reduction gas atmosphere or a vacuum atmosphere is maintained; and carrying out acid processing to apply acid solution to the superalloy part after the reduction. The oxide film formed in the surface of the superalloy is removed effectively without using a highly toxic gaseous fluoride. 1. An oxide film removing method of removing an oxide film formed in a surface of a superalloy part that contains a first metal as a base metal and a second metal different from the first metal , the oxide film containing oxide of the base metal and oxide of the second metal ,the oxide film removing method comprising:arranging the superalloy part inside a heating chamber;preparing a reduction gas atmosphere or a vacuum atmosphere inside the heating chamber;reducing the oxide of the base metal of the oxide film to the base metal by heating the inside of the heating chamber in a condition that the reduction gas atmosphere or the vacuum atmosphere is maintained; andcarrying out acid processing to apply acid solution to the superalloy part after the reduction,wherein the acid processing comprises:dissolving the base metal; andseparating the oxide of the second metal left without being reduced through the reduction, from the superalloy part together with the dissolved base metal.2. The oxide film removing method according to claim 1 , wherein the acid processing is carried out after the reduction.3. The oxide film removing method according to claim 1 , wherein the base metal is nickel or cobalt.4. The oxide film removing method according to claim 1 , wherein the oxide of the ...

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Номер записи: 88

10-06-2021 дата публикации

Aluminium multilayer brazing sheet for fluxfree brazing

Номер: US20210170532A1

Автор: Bechir Chehab, Carole Loable

Принадлежит: Constellium Neuf Brisach SAS

The present invention relates to a process for the production of an aluminium multilayer brazing sheet which comprises a core layer made of a 3xxx alloy comprising 0.1 to 0.25 wt. % Mg, a brazing layer made of a 4xxx alloy on one or both sides of the core layer, and optionally an interlayer between the core layer and the brazing layer on one or both sides of the core layer, the process comprising the successive steps of:providing the layers to be assembled or simultaneous casting of the layers to obtain a sandwich;rolling of the resulting sandwich to obtain a sheet; andtreating the surface of the sheet with an alkaline or acidic etchant.

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Номер записи: 89

30-04-2020 дата публикации

CHEMICAL PROCESS FOR MATIFICATION

Номер: US20200131646A1

Автор: Saget Pierre-Joseph Xavier Hervé

Принадлежит: SAFRAN AIRCRAFT ENGINES

The invention relates to a method for mattifying a turbine engine part () comprising a metal material, the method comprising a step of immersing said part in a chemical bath () for mattifying said metal part (), the bath () comprising at least sodium fluoride (NaF) and hydrofluoric (HF) acid, characterised in that the immersion step lasts between 2 and 15 minutes. 110141014. Method for mattifying a turbine engine part () comprising a metal material , the method comprising a step of immersing said part in a chemical bath () for mattifying said metal part () , the bath () comprising at least sodium fluoride (NaF) and hydrofluoric (HF) acid , characterised in that the immersion step lasts between 2 and 15 minutes.210. Method according to claim 1 , characterised in that the immersion step is configured so as to create a homogenous dissolution of the metal material over a thickness of around 3 to 10 μm claim 1 , and in that the part () is enriched with a minimum quantity of dihydrogen (H).310. Method according to claim 1 , characterised in that the metal material of the part () comprises titanium (Ti) claim 1 , a titanium alloy and/or titanium oxides (TiO).4. Mattifying method according to claim 1 , characterised in that the dissolved material thickness is 5 μm.510. Mattifying method according to claim 1 , characterised in that the enriching with dihydrogen (H) of the part () is around 15 ppm.610. Mattifying method according to claim 1 , characterised in that the part () has claim 1 , on the surface claim 1 , a titanium oxide (TiO) and alpha case layer claim 1 , the homogenous dissolution making is possible to remove the titanium oxide (TiO) and alpha case layer.7. Mattifying method according to claim 6 , characterised in that the homogenous dissolution occurs successively and/or at the same time according to two of the following chemical reactions:{'br': None, 'sub': 2', '4', '4, 'NaF+HSO═FH+NaHSO\u2003\u2003(1)'}{'br': None, 'sub': 2', '6', '2', '2, 'TiO+6HF→TiFH+HO.\ ...

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Номер записи: 90

08-09-2022 дата публикации

PREPARATION METHOD, APPARATUS, AND DEVICE FOR COPLANAR WAVEGUIDE STRUCTURE, AND SUPERCONDUCTING DEVICE

Номер: US20220285819A1

Автор: TANG Chengchun

Принадлежит:

A method for preparing a coplanar waveguide structure includes acquiring a structure to be etched, the structure to be etched including an aluminum film provided on a substrate structure and a photoresist structure provided at an upper end of the aluminum film, wherein the photoresist structure is configured to cover partial areas of the aluminum film; performing a first etching operation on the aluminum film provided on the substrate structure by using an acidic solution to obtain a first etched structure; rinsing the first etched structure to obtain an intermediate structure; performing a second etching operation on the intermediate structure by using an alkaline solution to obtain a second etched structure; and rinsing the second etched structure to obtain a target structure for generating a coplanar waveguide structure, the target structure including the aluminum film and the photoresist structure, wherein the photoresist structure covers all areas of the aluminum film. 1. A preparation method for a coplanar waveguide structure , comprising:acquiring a structure to be etched, the structure to be etched comprising an aluminum film provided on a substrate structure and a photoresist structure provided at an upper end of the aluminum film, wherein the photoresist structure is configured to cover partial areas of the aluminum film;performing a first etching operation on the aluminum film provided on the substrate structure by using an acidic solution to obtain a first etched structure;rinsing the first etched structure to obtain an intermediate structure;performing a second etching operation on the intermediate structure by using an alkaline solution to obtain a second etched structure; andrinsing the second etched structure to obtain a target structure for generating a coplanar waveguide structure, the target structure comprising the aluminum film provided on the substrate structure and the photoresist structure provided at the upper end of the aluminum film, ...

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Номер записи: 91

10-06-2021 дата публикации

Porous Solid Materials and Methods for Fabrication

Номер: US20210174982A1

Автор: VEREECKEN Philippe M., Zankowski Stanislaw Piotr

Принадлежит:

Porous solid materials are provided. The porous solid materials include a plurality of interconnected wires forming an ordered network. The porous solid materials may have a predetermined volumetric surface area ranging between 2 m/cmand 90 m/cm, a predetermined porosity ranging between 3% and 90% and an electrical conductivity higher than 100 S/cm. The porous solid materials may have a predetermined volumetric surface area ranging between 3 m/cmand 72 m/cm, a predetermined porosity ranging between 80% and 95% and an electrical conductivity higher than 100 S/cm. The porous solid materials () may have a predetermined volumetric surface area ranging between 3 m/cmand 85 m/cm, a predetermined porosity ranging between 65% and 90% and an electrical conductivity higher than 2000 S/cm. Methods for the fabrication of such porous solid materials and devices including such porous solid material are also disclosed. 1. A porous solid material comprising a plurality of interconnected wires , the plurality of interconnected wires forming an ordered network , wherein the porous solid material has any of:{'sup': 2', '3', '2', '3, 'a predetermined volumetric surface area ranging between 2 m/cmand 90 m/cm, a predetermined porosity ranging between 3% and 90% and an electrical conductivity higher than 100 S/cm; or'}{'sup': 2', '3', '2', '3, 'a predetermined volumetric surface area ranging between 3 m/cmand 72 m/cm, a predetermined porosity ranging between 80% and 95% and an electrical conductivity higher than 100 S/cm; or'}{'sup': 2', '3', '2', '3, 'a predetermined volumetric surface area ranging between 3 m/cmand 85 m/cm, a predetermined porosity ranging between 65% and 90% and an electrical conductivity higher than 2000 S/cm.'}2. The porous solid material according to claim 1 , wherein the porous solid material has any of:{'sup': 2', '3', '2', '3, 'a predetermined volumetric surface area ranging between 2 m/cmand 90 m/cm, a predetermined porosity ranging between 3% and 90% and an ...

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Номер записи: 92

02-06-2016 дата публикации

Salt Based Etching of Metals and Alloys for Fabricating Superhydrophobic and Superoleophobic Surfaces

Номер: US20160153094A1

Автор: Gurin Michael, Mukhopadhyay Kausik, TUTEJA Anish

Принадлежит:

A process to etch hierarchical, re-entrant texture into the surface of metals and their alloys using salt-based etching solutions. The process imbues superhydrophobic, oleophobic or superoleophobic, omniphobic or superomniphobic properties by further imparting a low surface energy coating onto the etched surfaces by chemical functionalization by low surface energy hydrophobilizing compounds. 1. A method for creating a hierarchical re-entrant texture of a metallic or metallic alloy surface comprising: etching the metal surface with an etching solution having 1 to 500 grams per liter of an at least one salt including an inorganic salt or organic salt , and water.2. The method of wherein the at least one salt is a weak acid-strong base claim 1 , weak base-strong acid claim 1 , weak acid-weak base claim 1 , or strong acid-strong base salt.3. The method of wherein the etching solution is comprised of a salt having a strong acid-weak base in solution claim 2 , or having a weak acid-strong base in solution claim 2 , or a combination of two or more salts having either a weak acid-weak base with another salt that is a promoter or catalyst for etching claim 2 , or a combination of two or more salts having a first salt of a strong acid-strong base and a second salt that is a promoter or a catalyst.4. The method of wherein the at least one salt is operable to dissociate a cation and an anion in the etching solution and wherein the at least one salt contains potassium hydrogen carbonate claim 1 , potassium hydrogen phosphate claim 1 , potassium dihydrogen phosphate claim 1 , ammonium carbonate claim 1 , sodium dihydrogen carbonate claim 1 , ammonium bromide claim 1 , sodium carbonate claim 1 , sodium acetate claim 1 , potassium carbonate claim 1 , ammonium acetate claim 1 , iron chloride claim 1 , iron sulfate claim 1 , iron nitrate claim 1 , cobalt chloride claim 1 , cobalt sulfate claim 1 , cobalt nitrate claim 1 , pyridine hydrochloride claim 1 , ammonium claim 1 , sodium ...

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Номер записи: 93

31-05-2018 дата публикации

Linear groove formation method and linear groove formation device

Номер: US20180147663A1

Автор: Masanori Uesaka, Shigehiro Takajo

Принадлежит: JFE Steel Corp

A linear groove formation method of forming linear grooves in a steel sheet surface using etching can form linear grooves of a uniform shape while suppressing a decrease in magnetic property of a grain-oriented electrical steel sheet caused by laser irradiation for resist removal. A linear groove formation method includes: coating a surface of a grain-oriented electrical steel sheet with a resist; performing a laser scan cyclically in a rolling direction of the grain-oriented electrical steel sheet, the laser scan being applying a laser while scanning the laser in a direction crossing the rolling direction to remove the resist in a portion irradiated with the laser; and etching the grain-oriented electrical steel sheet in each portion in which the resist is removed, to form a linear groove. A coating thickness of the resist is 0.5 μm to 10 μm, and a power of the laser is 1500 W or more.

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Номер записи: 94

07-05-2020 дата публикации

PROCESS FOR REGENERATING A BATH FOR CHEMICAL ETCHING OF TITANIUM PARTS

Номер: US20200141011A1

Автор: NICOLAS Mathieu

Принадлежит:

Disclosed is a method of regenerating a nitric and hydrofluoric acid bath contained in a machining vessel, the method including, when the etching bath is spent, performing steps of: transferring a portion of the spent etching bath, referred to as the “spent” solution, from the machining vessel into a reactor; adding NaF and NaNOto the spent solution, to form HF, HNO, and NaTiF; separating the resulting precipitate from the supernatant; transferring the supernatant, which is a regenerated solution, into a tank; measuring the concentrations of HF, of HNO, and of dissolved titanium in the tank and in the machining vessel; and determining the volume of regenerated solution that can be added to the spent etching bath to obtain a regenerated bath in which the concentrations of HF, of HNO, and of dissolved titanium lie in acceptable concentration ranges, and transferring the regenerated solution into the machining vessel. 1100. A method of regenerating a nitric and hydrofluoric acid bath for chemically etching parts made of titanium or titanium alloy and contained in a machining vessel () , the method comprising determining whether said etching bath is spent , and if so , in performing the steps consisting in:{'b': 100', '1, 'a) transferring a portion of the spent etching bath, referred to as the “spent” solution, from the machining vessel () into a reactor ();'}{'sub': 3', '3', '2', '6, 'b) adding a quantity of NaF and a quantity of NaNOto the spent solution, and allowing it to react to form HF, HNO, and NaTiF;'}c) settling to separate the resulting precipitate from the supernatant;{'b': '2', 'd) transferring the supernatant, which is a regenerated solution, into a tank ();'}{'sub': '3', 'b': 2', '100, 'e) measuring the concentrations of HF, of HNO, and of dissolved titanium in the tank () and in the machining vessel (); and'}{'sub': '3', 'b': '100', 'f) determining the volume of regenerated solution that can be added to the spent etching bath in order to obtain a ...

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Номер записи: 95

02-06-2016 дата публикации

PROCESS FOR NiFe FLUXGATE DEVICE

Номер: US20160155935A1

Автор: EISSA Mona M., JENSON Mark, ZHANG Yousong

Принадлежит:

An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern. 1. An etchant for the simultaneous etching of NiFe and AlN comprising:phosphoric acid;acetic acid;nitric acid; anddistilled water;21040. The etchant of claim 1 , wherein the phosphoric acid is concentrated phosphoric acid with a weight percent between % and % claim 1 , the acetic acid is concentrated acetic acid with a weight percent between 1% and 10% claim 1 , and the nitric acid is concentrated nitric acid with a weight percent between 0.1% and 3%.3. The etchant of claim 2 , wherein the weight percent of concentrated phosphoric acid is 30% claim 2 , the weight percent of concentrated acetic acid is 4% claim 2 , and the weight percent of concentrated nitric acid is 0.45%.4. A method of forming an integrated circuit claim 2 , comprising the steps:forming a first dielectric layer on a wafer of the integrated circuit;forming a layer of magnetic core material composed of alternating layers of NiFe permalloy and AlN dielectric on the first dielectric layer;forming a magnetic core pattern on the magnetic core material which exposes areas outside a magnetic core;etching with a wet etchant to remove the magnetic core material where exposed ...

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Номер записи: 96

17-06-2021 дата публикации

CHEMICAL SOLUTION AND METHOD FOR TREATING SUBSTRATE

Номер: US20210180192A1

Автор: SEKI Hiroyuki, SUGIMURA Nobuaki, Takahashi Tomonori

Принадлежит: FUJIFILM Corporation

The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO, NO, PO, and BO. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two or more kinds of the specific anions, a content of each of two or more kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two or more kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution. 1. A chemical solution used for removing a transition metal-containing substance on a substrate , comprising:one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof; and{'sub': 4', '3', '4', '3, 'sup': 2−', '−', '3−', '3−, 'one or more kinds of specific anions selected from the group consisting of SO, NO, PO, and BO,'}wherein in a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution, andin a case where the chemical solution contains two or more kinds of the specific anions, a content of each of two or more kinds of the specific anions is equal ...

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Номер записи: 97

16-05-2019 дата публикации

ETCH CHEMISTRIES FOR METALLIZATION IN ELECTRONIC DEVICES

Номер: US20190148420A1

Автор: BREWER Alex, Hogan Patrick, MOORE John, PETTIT Jared

Принадлежит:

In various embodiments, etchants featuring (i) mixtures of hydrochloric acid, methanesulfonic acid, and nitric acid, or (ii) mixtures of phosphoric acid, methanesulfonic acid, and nitric acid, are utilized to etch metallic bilayers while minimizing resulting etch discontinuities between the layers of the bilayer. 191.-. (canceled)92. A method of forming an electrode of a thin-film transistor , the method comprising:providing a base layer comprising at least one of silicon or glass;depositing over the base layer a barrier layer comprising molybdenum and nickel;depositing over the barrier layer a conductor layer comprising copper;forming a mask layer over the barrier layer;patterning the mask layer to reveal a portion of the conductor layer, a remaining portion of the mask layer at least partially defining a shape of the electrode; andthereafter, applying an etchant to remove portions of the conductor layer and the barrier layer not masked by the patterned mask layer, thereby forming a sidewall of the electrode comprising (a) an exposed portion of the barrier layer, (b) an exposed portion of the conductor layer, and (c) an interface between the exposed portion of the barrier layer and the exposed portion of the conductor layer.93. The method of claim 92 , wherein the etchant comprises a mixture of hydrochloric acid claim 92 , methanesulfonic acid claim 92 , nitric acid claim 92 , and claim 92 , optionally claim 92 , citric acid and/or a non-acid diluent.94. The method of claim 93 , wherein the etchant comprises claim 93 , by weight claim 93 , 5%40% nitric acid claim 93 , 5%-15% hydrochloric acid claim 93 , 20%-40% methanesulfonic acid claim 93 , and 0%-7% citric acid claim 93 , the balance being water.95. The method of claim 93 , wherein the etchant contains at least 49% diluent by weight.96. The method of claim 93 , wherein the etchant comprises 2%-7% citric acid by weight.97. The method of claim 92 , wherein the etchant consists of a mixture of hydrochloric acid ...

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Номер записи: 98

07-06-2018 дата публикации

Method for producing metal containing composite and metal containing composite formed by adhesion

Номер: US20180154608A1

Автор: Naoki Andoh

Принадлежит: Andoh-Corporation Co LP

An adhesive (B) of solvent containing adhesive as a suspension of low viscosity is prepared by adding a solvent MIBK to a one-part epoxy adhesive of a dicyandiamide-curable type (A). Metal shaped articles (M 1 to M 5 ) as adherends are prepared each of which, through various surface treatment, has specific surface configuration of roughened face and/or ultrafine irregularities and the surface is entirely covered with a thin layer of ceramics such as a metal oxide or metal phosphate. The specified face of each metal shaped article (M 1 to M 5 ) is painted with the solvent containing adhesive (B). The faces painted with the adhesive of two metal shaped articles (M 1 to M 5 ) are caused to abut each other, the articles are heated to cure the one-epoxy adhesive to accomplish adhesion. With one of the adherends replaced by a CFRP shaped article (P 2 ), a composite of a metal and CFRP can be formed.

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Номер записи: 99

22-09-2022 дата публикации

METHOD OF FINISHING A METALLIC SURFACE

Номер: US20220298647A1

Автор: Carter Christopher J.

Принадлежит:

A method of finishing a metallic surface includes the steps of: disposing a mask layer onto an initial metallic surface of a substrate, etching at least a portion of the initial metallic surface with an etchant to provide an etched surface, and separating the etchant from the etched surface. The etched surface is smoother than the initial metallic surface. On a depth basis: the etchant etches said at least a portion of the mask layer and said at least a portion of the initial metallic surface at substantially the same rate; and/or the etchant penetrates said at least a portion of the mask layer and etches said at least a portion of the initial metallic surface at substantially the same rate. A substrate finished by the disclosed method and a kit for practicing the method are also disclosed. 116-. (canceled)17. A method of finishing a metallic surface , the method comprising steps:(a) disposing a mask layer onto an initial metallic surface of a substrate, wherein the mask layer has a major surface opposite the initial metallic surface that is smoother than the initial metallic surface; (i) the etchant etches said at least a portion of the mask layer and said at least a portion of the initial metallic surface at substantially the same rate; and/or', '(ii) the etchant penetrates said at least a portion of the mask layer and etches said at least a portion of the initial metallic surface at substantially the same rate; and, '(b) etching at least a portion of the initial metallic surface with an etchant to provide an etched surface, wherein on a depth basis(c) separating the etchant from the etched surface, wherein the etched metallic surface is smoother than the initial metallic surface.18. The method of claim 17 , wherein the etchant etches said at least a portion of the mask layer and said at least a portion of the initial metallic surface at substantially the same rate.19. The method of claim 17 , wherein the mask layer is completely removed during step (b).20. The ...

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Номер записи: 100