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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 11273. Отображено 100.
19-01-2012 дата публикации

Printed wiring board and a method of production thereof

Номер: US20120012464A1
Автор: Tomoyuki Ikeda
Принадлежит: Ibiden Co Ltd

A method for manufacturing a printed wiring board including providing an insulating resin substrate having first and second surfaces, irradiating laser upon the first surface such that a first opening portion having an opening on the first surface and tapering inward is formed, irradiating laser upon the second surface such that a second opening portion having an opening on the second surface, tapering inward and communicated to the first opening portion is formed and that a penetrating-hole having the first and second opening portions is formed, forming an electroless plated film on an inner wall surface of the penetrating-hole, and forming an electrolytic plated film on the electroless plated film such that a through hole conductor structure is formed in the penetrating-hole. The opening of the first portion has an axis of the center of gravity offset with respect to that of the opening of the second opening portion.

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Номер записи: 1
02-02-2012 дата публикации

Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv) with heated substrate and cooled electrolyte

Номер: US20120024713A1
Автор: Robert F. Preisser
Принадлежит: Individual

Process of electrodepositing a metal in a high aspect ratio via in a silicon substrate to form a through-silicon-via (TSV), utilizing an electrolytic bath including a redox mediator, in an electrolytic metal plating system including a chuck adapted to hold the silicon substrate and to heat the silicon substrate to a first temperature, a temperature control device to maintain temperature of the electrolytic bath at a second temperature, in which the first temperature is maintained in a range from about 30° C. to about 60° C. and the second temperature is maintained at a temperature (a) at least 5° C. lower than the first temperature and (b) in a range from about 15° C. to about 35° C.

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Номер записи: 2
23-02-2012 дата публикации

Printed circuit board and method of manufacturing the same

Номер: US20120043121A1
Автор: Jong Seok Bae
Принадлежит: Samsung Electro Mechanics Co Ltd

Disclosed herein are a printed circuit board and a method of manufacturing the same. The printed circuit board includes: an insulating layer; a first circuit layer including a first metal layer and a first plating layer provided on an outer side of the first metal layer and embedded in one surface of the insulating layer; a second circuit layer including a second metal layer and a second plating layer provided on an outer side of the second metal layer and embedded in the other surface of the insulating layer; and a bump interconnecting the first circuit layer and the second circuit layer while penetrating through the insulating layer. The bump is used, such that there is no need to perform hole plating. Therefore, an increase in the surface plating thickness due to the hole plating is previously prevented.

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Номер записи: 3
23-02-2012 дата публикации

Working electrode design for electrochemical processing of electronic components

Номер: US20120043216A1
Автор: Charles L. Arvin, Glen N. Biggs, Hariklia Deligianni, Raschid J. Bezama, Tracy A. Tong
Принадлежит: International Business Machines Corp

An electroplating apparatus is provided that includes a plating tank for containing a plating electrolyte. A counter electrode, e.g., anode, is present in a first portion of the plating tank. A cathode system is present in a second portion of the plating tank. The cathode system includes a working electrode and a thief electrode. The thief electrode is present between the working electrode and the counter electrode. The thief electrode includes an exterior face that is in contact with the plating electrolyte that is offset from the plating surface of the working electrode. In one embodiment, the thief electrode overlaps a portion of the working electrode about the perimeter of the working electrode. In one embodiment, a method is provided of using the aforementioned electroplating apparatus that provides increased uniformity in the plating thickness.

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Номер записи: 4
23-02-2012 дата публикации

Mechanisms for forming copper pillar bumps using patterned anodes

Номер: US20120043654A1
Автор: Chih-Wei Lin, Chung-Shi Liu, Ming-Da Cheng, Wen-Hsiung LU
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

The mechanisms of preparing bump structures described by using patterned anodes may simplify bump-making process, reduce manufacturing cost, and improve thickness uniformity within die and across the wafer. In addition, the mechanisms described above allow forming bumps with different heights to allow bumps to be integrated with elements on a substrate with different heights. Bumps with different heights expand the application of copper post bumps to enable further chip integration.

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Номер записи: 5
15-03-2012 дата публикации

Method for forming conductive via in a substrate

Номер: US20120064230A1
Автор: Chien-Hung Ho, Hsiao-Chun Liu, Sheng-Li Hsiao, Shih-Long Wei
Принадлежит: Viking Tech Corp

The steps of the present invention are as follows: (a) a detachable film is formed on both sides of a substrate, respectively; (b) a number of vias running through both sides of the detachable films are formed in the substrate; (c) the vias are filled with a conductive paste; (d) the detachable films are peeled off; (e) a metallic conductive layer is deposited on both sides of the substrate, respectively; (f) a specific mold pattern is formed on the metallic conductive layers, respectively, by a photolithographic process; (g) a metallic circuit layout layer is formed on the patterns, respectively, by an electrochemical process; and (h) the mold patterns and the metallic conductive layers are removed. As such, the substrate is not contaminated by the conductive paste. Further, by using deposition, metallic conductive layers are directly adhered to the substrate and, by using photolithography, layouts with small linewidth could be formed.

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Номер записи: 6
29-03-2012 дата публикации

Electrolytic gold or gold palladium surface finish application in coreless substrate processing

Номер: US20120077054A1
Автор: Charavanakumara Gurumurthy, Tao Wu
Принадлежит: Intel Corp

Electronic assemblies including coreless substrates having a surface finish, and their manufacture, are described. One method includes electrolytically plating a first copper layer on a metal core in an opening in a patterned photoresist layer. A gold layer is electrolytically plated on the first copper layer in the opening. An electrolytically plated palladium layer is formed on the gold layer. A second copper layer is electrolytically plated on the palladium layer. After the electrolytically plating the second copper layer, the metal core and the first copper layer are removed, wherein a coreless substrate remains. Other embodiments are described and claimed.

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Номер записи: 7
21-06-2012 дата публикации

Electrolytic copper process using anion permeable barrier

Номер: US20120152751A1
Автор: Bioh Kim, John Lee Klocke, Kyle M. Hanson, Rajesh Baskaran, Robert W. Batz, Jr., Tom L. Ritzdorf
Принадлежит: Applied Materials Inc

Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and a counter electrode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, a counter electrode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids. Some of the described processes produce deposits over repeated plating cycles that exhibit resistivity values within desired ranges.

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Номер записи: 8
26-07-2012 дата публикации

Structures for improving current carrying capability of interconnects and methods of fabricating the same

Номер: US20120187558A1
Автор: Charles L. Arvin, Harry D. Cox, Krystyna W. Semkow, Raschid J. Bezama, Timothy D. Sullivan, Timothy H. Daubenspeck
Принадлежит: International Business Machines Corp

Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.

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Номер записи: 9
20-09-2012 дата публикации

Nickel-Plated Steel Sheet for Manufacturing Pipe Having Corrosion Resistance Against Fuel Vapors, Pipe Which Uses the Steel Sheet,and Fuel Supply Pipe Which Uses the Steel Sheet

Номер: US20120234428A1
Автор: Hideyuki Minagi, Koh Yoshioka, Tatsuo Tomomori
Принадлежит: Toyo Kohan Co Ltd

Provided is a nickel-plated steel sheet for manufacturing a pipe having corrosion resistance against fuel vapor of fuel such as gasoline, light oil, bioethanol or bio-diesel fuel, and a pipe and a fuel supply pipe. In the nickel-plated steel sheet for manufacturing a pipe, a nickel plating layer having a plating thickness of 0.5 to 10 μm is formed on a surface of a steel sheet thus having corrosion resistance against fuel vapor. In the pipe and the fuel supply pipe, a nickel plating layer having a plating thickness of 0.5 to 10 μm is formed on an inner surface of a pipe formed of a steel sheet thus having corrosion resistance against fuel vapor. In the fuel supply pipe 20 formed of a steel sheet for supplying fuel to a fuel tank 23 , the fuel supply pipe includes: a large-diameter pipe portion 21 through which the fuel passes; and a small-diameter pipe portion 22 which makes an upper portion of the large-diameter pipe portion and a lower portion of the large-diameter pipe portion communicate with each other for ventilation, and a nickel plating layer having a plating thickness of 0.5 to 10 μm is formed on an inner surface of at least the small-diameter pipe portion.

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Номер записи: 10
20-09-2012 дата публикации

Method for Electrochemical Fabrication

Номер: US20120234688A1
Автор: Adam L. Cohen
Принадлежит: University of Southern California USC

An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

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Номер записи: 11
20-09-2012 дата публикации

One-piece decorative trim bezel having plural unpainted finishes

Номер: US20120235436A1
Автор: Haoliang Michael Sun
Принадлежит: FORD GLOBAL TECHNOLOGIES LLC

A one-piece trim bezel formed from multiple components. In the event of two co-molded components, the first co-molded part is composed of a polymerized material having an unpainted surface that may be a high gloss smooth surface or a textured low gloss surface and the second co-molded part, formed with the first part, is composed of a plateable plastic material. The second co-molded part is co-molded with the said first co-molded part to form a single piece trim bezel. The color of the polymerized material of the first co-molded part may be selected from a variety of colors. The plateable plastic material may be plateable with chrome. A multiple-shot injection molding process is used to form the one-piece trim bezel which joins the first co-molded part and the second co-molded part in one operation. The formed part is then subjected to a plating process during which time the chrome only deposits on the surface of the plateable plastic material of the second co-molded part while the surface of the first co-molded part remains unplated.

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Номер записи: 12
04-10-2012 дата публикации

Housing and manufacturing method

Номер: US20120251839A1
Автор: Che-Chao Chu, Shih-Pin Wang, Yan Xiong, Zhe-Xuan Zhang
Принадлежит: Foxconn Technology Co Ltd, Fuzhun Precision Industry Shenzhen Co Ltd

A housing having a coating is disclosed. The housing comprises a base substrate made of metallic material; a micro-arc oxide layer formed on the base substrate; and a protection outer film formed on the micro-arc oxide layer and comprising a coating layer and a metallic layer, wherein the metallic layer is formed on the micro-arc oxide layer and covers a portion of the micro-arc oxide layer; and the coating layer is formed on a remaining portion of the micro-arc oxide layer so that the micro-arc oxide layer is covered by the metallic layer and the coating layer.

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Номер записи: 13
04-10-2012 дата публикации

Method of controlling silicon oxide film thickness

Номер: US20120252228A1
Автор: Yuanchang Zhang
Принадлежит: Natcore Technology Inc

A deposition process for coating a substrate with films of a different thickness on front and rear surface of a substrate can be achieve in one growth. The thickness of the film deposition can be controlled by the separation between the substrates. Different separation distances between the substrates in the same chemical bath will result in different film thicknesses on the substrate. Substrates may be arranged to have different separation distances between front and back surfaces, a V-shaped arrangement, or placed next to a curtain with varying separation distances between a substrate and the curtain.

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Номер записи: 14
18-10-2012 дата публикации

Methods for Forming a Barrier Layer with Periodic Concentrations of Elements and Structures Resulting Therefrom

Номер: US20120263869A1
Автор: Igor C. Ivanov
Принадлежит: Lam Research Corp

A method is provided which includes dispensing and removing different deposition solutions during an electroless deposition process to form different sub-films of a composite layer. Another method includes forming a film by an electroless deposition process and subsequently annealing the microelectronic topography to induce diffusion of an element within the film. Yet another method includes reiterating different mechanisms of deposition growth, namely interfacial electroless reduction and chemical adsorption, from a single deposition solution to form different sub-films of a composite layer. A microelectronic topography resulting from one or more of the methods includes a film formed in contact with a structure having a bulk concentration of a first element. The film has periodic successions of regions each comprising a region with a concentration of a second element greater than a set amount and a region with a concentration of the second element less than the set amount.

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Номер записи: 15
08-11-2012 дата публикации

Continuous micro anode guided electroplating device and method thereof

Номер: US20120279862A1
Автор: Jen-Hung Yang, Jing-Chie Lin, Ting-Chao Chen, Ting-Kang Chang, Yean-Ren Hwang
Принадлежит: National Central University

A continuous micro anode guided electroplating device and a method thereof are revealed. By real-time image monitoring and capillary action of the micro/nanoscale tube, a three-dimensional microstructure is deposited on a workpiece at the cathode. The deposit is growing smoothly under the real-time image monitoring. Moreover, the workpiece is not immersed in an electrolyte so that contaminations of the workpiece caused by electrolyte are reduced.

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Номер записи: 16
08-11-2012 дата публикации

Photoplating of metal electrodes for solar cells

Номер: US20120282731A1
Автор: Alison Maree Wenham, Ly Mai, Stuart Ross Wenham
Принадлежит: NEWSOUTH INNOVATIONS PTY LTD

A method of photoplating a metal contact onto a surface of a cathode of a photovoltaic device is provided using light induced plating technique. The method comprises: a) immersing the photovoltaic device in a solution of metal ions, where the metal ions are a species which is to be plated onto the surface of the cathode of the photovoltaic device; and b) illuminating the photovoltaic device, using a light source of time varying intensity. This results in nett plating which is faster in a direction normal to the surface of the cathode than in a direction in a plane of the surface of the cathode.

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Номер записи: 17
20-12-2012 дата публикации

Apparatus and method for electrochemical processing of thin films on resistive substrates

Номер: US20120318673A1
Автор: Hariklia Deligianni, John M. Cotte, Matteo Flotta, Veeraraghavan S. Basker
Принадлежит: International Business Machines Corp

An electrochemical process comprising: providing a 125 mm or larger semiconductor wafer in electrical contact with a conducting surface, wherein at least a portion of the semiconductor wafer is in contact with an electrolytic solution, said semiconductor wafer functioning as a first electrode; providing a second electrode in the electrolytic solution, the first and second electrode connected to opposite ends of an electric power source; and irradiating a surface of the semiconductor wafer with a light source as an electric current is applied across the first and the second electrodes. The invention is also directed to an apparatus including a light source and electrochemical components to conduct the electrochemical process.

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Номер записи: 18
31-01-2013 дата публикации

Templated circuitry fabrication

Номер: US20130029481A1
Автор: David Fitzpatrick, Kevin Dooley, Lorraine Byrne
Принадлежит: Hewlett Packard Development Co LP

A method of making templated circuitry employs a template system that includes a template of an insulator material on a carrier having a conductive surface. The template includes multiple levels and multiple regions, wherein a first level exposes the conductive surface of the carrier. A first metal is electrochemically deposited on the conductive surface in first regions of the first level. A circuit material is deposited to cover the first metal. The template is etched until a second level of the template exposes the conductive surface in second regions on opposite sides of the first regions. A second metal is electrochemically deposited on the conductive surface in the second regions. The template of deposited materials is transferred from the carrier to a substrate.

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Номер записи: 19
14-03-2013 дата публикации

Embedding a nanotube inside a nanopore for dna translocation

Номер: US20130062212A1
Автор: Ali Afzali-Ardakani, Binquan Luan, Hongbo Peng
Принадлежит: International Business Machines Corp

A technique for embedding a nanotube in a nanopore is provided. A membrane separates a reservoir into a first reservoir part and a second reservoir part, and the nanopore is formed through the membrane for connecting the first and second reservoir parts. An ionic fluid fills the nanopore, the first reservoir part, and the second reservoir part. A first electrode is dipped in the first reservoir part, and a second electrode is dipped in the second reservoir part. Driving the nanotube into the nanopore causes an inner surface of the nanopore to form a covalent bond to an outer surface of the nanotube via an organic coating so that the inner surface of the nanotube will be the new nanopore with a super smooth surface for studying bio-molecules while they translocate through the nanotube.

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Номер записи: 20
14-03-2013 дата публикации

METHOD OF MANUFACTURING AN ELECTROCHROMIC ARTICLE

Номер: US20130062213A1
Автор: Duluard Sandrine
Принадлежит: Essilor International ( Compagnie Generale D'Optique)

The present invention relates to a process for manufacturing an electrochromic article comprising the following successive steps: (a) the deposition of a layer of an electrochromic compound on the surface of a transparent or translucent electrically conductive substrate, said layer of electrochromic compound covering only one portion of the surface of said electrically conductive substrate and leaving free at least one other portion thereof, (b) the deposition of a redox agent which is a reducing agent or an oxidizing agent for the electrochromic compound, on the portion of the surface of the electrically conductive substrate not covered by the layer of electrochromic compound, (c) the contacting of the layer of electrochromic compound, deposited in step (a), and of the layer of redox agent, deposited in step (b), with a liquid electrolyte for a sufficient time to enable the reduction or the oxidation of the electrochromic compound by the redox agent, and (d) the removal of the electrolyte by rinsing and/or drying. 1. A process for manufacturing an electrochromic article comprising the following successive steps:(a) the deposition of a layer of an electrochromic compound on the surface of a transparent or translucent electrically conductive substrate, said layer of electrochromic compound covering only one portion of the surface of said electrically conductive substrate and leaving free at least one other portion thereof,(b) the deposition of a redox agent which is a reducing agent or an oxidizing agent for the electrochromic compound, on the portion of the surface of the electrically conductive substrate not covered by the layer of electrochromic compound,(c) the contacting of the layer of electrochromic compound, deposited in step (a), and of the layer of redox agent, deposited in step (b), with a liquid electrolyte for a sufficient time to enable the reduction or the oxidation of the electrochromic compound by the redox agent, and(d) the removal of the ...

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Номер записи: 21
21-03-2013 дата публикации

COMPOSITION FOR METAL ELECTROPLATING COMPRISING LEVELING AGENT

Номер: US20130068626A1
Автор: Arnold Marco, Emnet Charlotte, Fluegel Alexander, Mayer Dieter, Meier Nicole, Raether Roman Benedikt, Roeger-Goepfert Cornelia, Siemer Michael
Принадлежит: BASF SE

A composition comprising a source of metal ions and at least one leveling agent comprising a linear or branched, polymeric imidazolium compound comprising the structural unit of formula L1 (L1) wherein R, R, Rare each independently selected from an H atom and an organic radical having from 1 to 20 carbon atoms, R4 is a divalent, trivalent or mutlivalent organic radical which does not comprise a hydroxyl group in the α or β position relative to the nitrogen atom of the imidazole rings is an integer. 2. The composition according to claim 1 , wherein Rand Rare H atoms.3. The composition according to claim 1 , wherein Ris an H atom.4. The composition according to claim 1 , wherein Ris a substituted or an unsubstituted C2 to C20 alkandiyl.5. The composition according to claim 4 , wherein Rdoes not comprise hydroxyl groups.6. The composition according to claim 1 , wherein the additive comprises a counterion hu o− claim 1 , wherein o is an integer.7. The composition according to claim 6 , wherein the counterion Y is a chloride claim 6 , a sulfate or an acetate.8. The composition according to claim 1 , wherein a number average molecular weight Mof the polymeric imidazolium compound claim 1 , determined by gel permeation chromatography claim 1 , is greater than 500 g/mol.9. The composition according to claim 1 , wherein the polymeric imidazolium compound comprises more than 80% by weight of structural units of the formula L1.10. The composition according to claim 1 , wherein the additive is prepared by reacting{'sup': 1', '2, 'an α-dicarbonyl compound R—CO—CO—R,'}{'sup': '3', 'an aldehyde R—CHO,'}{'sub': 'm', 'sup': '4', 'at least one amino compound (NH2—)R, and'}{'sup': +', 'o−, 'sub': 'o', 'a protic acid (H)Y.'}11. The composition according to claim 10 , wherein the amino compound is an aliphatic or aromatic diamine claim 10 , triamine claim 10 , multiamin claim 10 , or mixtures thereof.12. (canceled)13. The composition according to claim 1 , further comprising an ...

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Номер записи: 22
28-03-2013 дата публикации

Metal Treatment

Номер: US20130075267A1
Автор: Lewis David Richard, Shawcross James Timothy, Turner Andrew Derek
Принадлежит: ACCENTUS MEDICAL LTD

Metal implants () are treated by anodising the surface () in contact with an electrolyte, and then briefly subjecting the anodised surface to a reversed voltage. During a first anodising stage the surfaces are passivated, while during a subsequent anodising stage pits are formed in the passivating surface layer. Rough portions () of the surface, in particular portions produced by plasma spraying of metal powder, are sealed with a watertight cover () during at least part of the anodising process. After rinsing, biocidal metal ions are subsequently absorbed into the surface of the implant. This provides the implant with biocidal properties. The use of the cover () enables a more uniform geometric distribution of biocidal metal ions to be achieved. 1. A method of treating a metal implant , the implant having a part of its surface provided with a rough metal finish , so as to incorporate a biocidal material in leachable form in the surface , the method comprising:(a) enclosing the part of the surface with the rough metal finish with a watertight cover;(b) contacting the metal object with an anodising electrolyte, and applying an anodising voltage to the metal object to passivate the metal by forming an anodised integral surface layer on the metal object;(c) then removing the watertight cover; and, either before or after step (c),(d) contacting the anodised metal object with a solution containing a biocidal material so as to incorporate said biocidal material into the surface layer.2. A method as claimed in wherein the metal implant is formed of titanium or an alloy of titanium claim 1 , or niobium claim 1 , tantalum or zirconium or their alloys claim 1 , or is plated or coated with such metals or their alloys.3. A method as claimed in wherein before performing steps (c) and (d) the implant is subjected to the steps of:(e) continuing the application of an anodising voltage to produce pits through the integral surface layer formed in step (b);(f) then producing a hydrous ...

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Номер записи: 23
04-04-2013 дата публикации

METHOD FOR TREATING THE SURFACE OF A DEVICE FOR DISPENSING A FLUID PRODUCT

Номер: US20130081953A1
Автор: Bruna Pascal, Laurent Matthieu, Nekelson Fabien, Roussel Sébastien, Tessier Lorraine
Принадлежит: VALOIS SAS

A treatment method for treating the surface of a fluid dispenser device, said method comprising the step of using chemical grafting to form a thin film on at least one support surface of at least one movable portion of said device that is movable while said device is being actuated, said thin film having anti-friction properties. 1. A treatment method for treating the surface of a fluid dispenser device , said method being characterized in that it comprises a step of using chemical grafting to form a thin film on at least one support surface of at least one movable portion of said device that is movable while said device is being actuated , said thin film having anti-friction properties.2. A method according to claim 1 , wherein said grafting step comprises putting said surface that is in contact with the fluid into contact with a solution that includes at least one adhesive primer claim 1 , said adhesive primer being a cleavable aryl salt claim 1 , and at least one monomer or polymer selected from the group constituted by vinyl- or acrylic-terminated siloxanes.3. A method according to claim 1 , wherein vinyl- or acrylic-terminated siloxanes are selected from the group constituted by: vinyl- or acrylic-terminated polyalkylsiloxanes such as vinyl- or acrylic-terminated polymethylsiloxane; vinyl- or acrylic-terminated polydimethylsiloxane such as polydimethylsiloxane-acrylate (PDMS-acrylate); vinyl- or acrylic-terminated polyarylsiloxanes such as vinyl- or acrylic-terminated polyphenylsiloxane such as polyvinylphenylsiloxane; and vinyl- or acrylic-terminated polyarylalkylsiloxanes such as vinyl- or acrylic-terminated polymethylphenylsiloxane.4. A method according to claim 1 , wherein the cleavable aryl salt is selected from the group constituted by: aryl diazonium salts; aryl ammonium salts; aryl phosphonium salts; aryl sulfonium salts; and aryl iodonium salts.5. A method according to claim 1 , wherein said chemical-grafting step is initiated by chemical activation.6. ...

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Номер записи: 24
23-05-2013 дата публикации

Device and a method for applying a coating on a workpiece by electrodeposition

Номер: US20130126335A1
Автор: Alain Le Cleac'h, Jean-Louis Thomas
Принадлежит: SNECMA SAS

The invention relates to a device and a method of applying a coating on a workpiece by electrodeposition. A vessel is provided that is suitable for filling with a bath of electrolyte, anode-forming conductor means being placed in the vessel and connected to a current generator, a cathode-forming workpiece mounted on the mandrel of a lathe, and guidance and movement means for guiding and moving the vessel relative to the lathe, the guidance and movement means enabling the workpiece to be immersed in full or in part in the bath of electrolyte.

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Номер записи: 25
13-06-2013 дата публикации

Electroplating methods for fabricating integrated circuit devices and devices fabricated thereby

Номер: US20130147005A1
Автор: Hei Seung Kim, Insun Park, Jongmin Baek, Jongwon Hong
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Provided are methods of fabricating a semiconductor device and semiconductor devices fabricated thereby. In the methods, dummy recess regions may be formed between cell recess regions and a peripheral circuit region. Due to the presence of the dummy recess regions, it may be possible to reduce a concentration gradient of a suppressor contained in a plating solution near the dummy pattern region, to make the concentration of the suppressor more uniform in the cell pattern region, and to supply an electric current more effectively to the cell pattern region. As a result, a plating layer can be more uniformly formed in the cell pattern region, without void formation therein.

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Номер записи: 26
13-06-2013 дата публикации

GRATINGS FOR X-RAY IMAGING, CONSISTING OF AT LEAST TWO MATERIALS

Номер: US20130148788A1
Автор: Mohr Juergen, Pfeiffer Franz, Reznikova Elena, Schulz Joachim
Принадлежит:

Gratings for analyzing the interference image in interferometers for phase contrast X-ray tomography, comprising a carrier and grating webs produced from at least two different materials, method for producing the same and use thereof. 112.-. (canceled)13. Gratings comprising a carrier and at least two materials which absorb X-rays.14. The gratings of claim 13 , wherein the at least two materials are metals.16. The gratings of claim 15 , wherein the gratings have a layer structure (i).17. The gratings of claim 15 , wherein the gratings have a layer structure (v).18. The gratings of claim 13 , wherein the gratings consist of a carrier and exactly two materials.19. The gratings of claim 18 , wherein the two materials are gold and tungsten.20. The gratings of claim 19 , wherein a ratio of a layer thickness of W to a layer thickness of Au is from 1:2 to 1:6.21. The gratings of claim 20 , wherein a layer structure is carrier/Au/W or W/carrier/Au.22. The gratings of claim 20 , wherein a layer structure is carrier/W/Au.23. The gratings of claim 13 , wherein the carrier is selected from one or more of silicon claim 13 , silicon compounds claim 13 , polymers claim 13 , and materials having a low atomic number.24. A method for producing the gratings of claim 13 , wherein the method comprises:(a1) working a grating structure into a carrier wafer,(b1) filling the grating structure with a first material,(c1) removing first material deposited on a surface and thinning the wafer back on a rear side,(d1.1) applying onto a front side (composite structure first material/wafer) a metallic layer, or(d1.2) applying onto a rear side (composite structure first material/wafer) a metallic layer,which layer later serves as an electroplating start layer, (f1.1) from a front side, or', '(f1.2) from a rear side,, '(e1) applying a negative resist on the metallic layer and patterning the resist with X-ray radiation in accordance with a LIGA method'}(g1) filling freely developed trenches with a ...

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Номер записи: 27
11-07-2013 дата публикации

METHOD OF FORMING A NANO-STRUCTURE

Номер: US20130175177A1
Автор: Fuller Anthony M., Mardilovich Peter, Wei Qingqiao
Принадлежит: Hewlett-Packard Development Company, L.P.

A method of forming a nano-structure (′) involves forming a multi-layered structure () including an oxidizable material layer () established on a substrate (), and another oxidizable material layer () established on the oxidizable material layer (). The oxidizable material layer () is an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. Anodizing the other oxidizable material layer () forms a porous anodic structure (′), and anodizing the oxidizable material layer () forms a dense oxidized layer (′) and nano-pillars () which grow through the porous anodic structure (′) into pores () thereof. The porous structure (′) is selectively removed to expose the nano-pillars (). A surface (I) between the dense oxidized layer (′) and a remaining portion of the oxidizable material layer () is anodized to consume a substantially cone-shaped portion () of the nano-pillars () to form cylindrical nano-pillars (′). 1100. A method of forming a nano-structure (′) , comprising:{'b': 10', '14', '12', '16', '14', '14, 'forming a multi-layered structure () including i) an oxidizable material layer () established on a substrate (), and ii) an other oxidizable material layer () established on the oxidizable material layer (), the oxidizable material layer () being formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1;'}{'b': 16', '16, 'anodizing the other oxidizable material layer () to form a porous anodic structure (′);'}{'b': 14', '14', '20', '16', '18', '16, 'anodizing the oxidizable material layer () to form a dense oxidized layer (′), and nano-pillars () which grow through the porous anodic structure (′) into pores () of the porous anodic structure (′);'}{'b': 16', '20, 'selectively removing the porous anodic structure (′) to expose the nano-pillars (); and'}{'b': 14', '14', '32', '20', '20, 'anodizing a surface (I) between the dense oxidized layer (′) and a remaining portion of the oxidizable ...

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Номер записи: 28
18-07-2013 дата публикации

PRESSURE MASKING SYSTEMS AND METHODS FOR USING THE SAME

Номер: US20130180952A1
Автор: Berkebile Matthew Paul, Fulton Blake Allen, Hunt Mark Lawrence
Принадлежит: GENERAL ELECTRIC COMPANY

Methods of treating a target surface of an article having one or more passageways includes fluidly connecting a pressure masker including pressurized masking fluid to a first side of at least one passageway, passing the pressurized masking fluid through the at least one passageway from the first side to a second side having the target surface, and treating the target surface of the article using a surface treatment system that disposes a surface treating material on the target surface, wherein the pressurized masking fluid passing through the at least one passageway prevents the surface treating material from permanently altering a cross sectional area of the at least one passageway. 1. A method of treating a target surface of an article comprising one or more passageways , the method comprising:fluidly connecting a pressure masker comprising pressurized masking fluid to a first side of at least one passageway;passing the pressurized masking fluid through the at least one passageway from the first side to a second side comprising the target surface; and,treating the target surface of the article using a surface treatment system that disposes a surface treating material on the target surface, wherein the pressurized masking fluid passing through the at least one passageway prevents the surface treating material from permanently altering a cross sectional area of the at least one passageway.2. The method of claim 1 , wherein the surface treatment system comprises a cladding system.3. The method of claim 2 , wherein the surface treating material comprises a powder material such that the pressurized masking fluid passing through the at least one passageway prevents the powder material from permanently altering a cross sectional area of the at least one passageway.4. The method of claim 1 , wherein the surface treatment system comprises a plating system.5. The method of claim 4 , wherein the surface treatment system comprises an electroplating system.6. The method of ...

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Номер записи: 29
25-07-2013 дата публикации

METHODS FOR FABRICATING GAS TURBINE ENGINES

Номер: US20130186763A1
Автор: Farr Howard John, Gupta Bhupendra Kumar, Rucker Michael Howard
Принадлежит: GENERAL ELECTRIC COMPANY

Methods and apparatus of fabricating gas turbine engine components are provided. The method includes positioning a non-consumable shield adjacent to an edge of the component such that a gap is defined between the shield and the component, wherein the shield and gap form a fluid flow restriction adjacent to the edge, and inducing an electrical current from an anode to the component through an electrolyte bath such that a coating is applied to the component. 1. A method for fabricating a gas turbine engine component , said method comprising:positioning a non-consumable shield adjacent to an edge of the component such that a gap is defined between the shield and the component, a distance of the gap extending from about 0.010 inches to about 0.050 inches from the edge to the shield, wherein the shield and gap form a fluid flow restriction adjacent to the edge; andinducing an electrical current from an anode to the component through an electrolyte bath such that a coating is applied to the component.2. The method in accordance with further comprising electroplating the component such that a thickness of the plating coating on the edge of the component is substantially equal to a thickness of the plating coating across the surface of the component.3. The method in accordance with claim 1 , wherein inducing an electrical current from an anode to the component comprises coupling the component as a cathode in the electrical circuit.48-. (canceled)9. The method in accordance with claim 1 , wherein positioning a non-consumable shield adjacent to the edge of the component comprises positioning the shield adjacent to the edge such that the shield has a contour that substantially matches a contour of the edge.1020-. (canceled)21. The method in accordance with claim 2 , wherein positioning a non-consumable shield adjacent to an edge of the component comprises reducing the thickness of the electroplated edge of the component by at least about 0.0001 inches relative to a non- ...

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Номер записи: 30
25-07-2013 дата публикации

Method for manufacturing sensing electrical device and sensing electrical device

Номер: US20130187813A1
Автор: Cheng-Yen Wang, Hui-Mei Chang, Sheng-Hung Yao
Принадлежит: Taiwan Green Point Enterprise Co Ltd

A method for manufacturing a sensing electrical device includes the following steps; (a) forming a conductive trace on an insulating substrate; (b) placing the insulating substrate with the conductive trace in a mold cavity of a mold; (c) injecting an insulating material into the mold cavity to encapsulate the conductive trace to form an injection product; and (d) removing the injection product from the mold cavity.

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Номер записи: 31
15-08-2013 дата публикации

DEVICE FOR FIXEDLY SECURING A METALLIC INLAY

Номер: US20130208577A1
Автор: Froelicher Thomas, NETUSCHILL Alexandre
Принадлежит: Omega S.A.

The invention relates to an element () including a body () comprising at least one recess () forming the pattern cavity for a decoration (), said at least one recess being entirely filled by a galvanic deposition () in order to form an element () inlaid with at least one metallic decoration () with improved visual quality. According to the invention, the element () includes a device for fixedly securing said at least one metallic decoration communicating with said at least one recess in order to improve the securing of said at least one decoration against said element. 1. An element comprising a body including at least one recess forming the pattern cavity of a decoration , the at least one recess being entirely filled by a galvanic deposition so as to form an element inlaid of at least one metallic decoration with improved visual quality , wherein the element includes a device for fixedly securing the at least one metallic decoration comprising at least one hole through said element , communicating with the at least one recess and being at least partially filled with the galvanic deposition so as to improve the securing of the at least decoration against the element.2. The element according to claim 1 , wherein the diameter of the at least one hole flares gradually as it gets further away from the at least one recess so as to hold the galvanic deposition against the element.3. The element according to claim 1 , wherein the galvanic deposition completely fills said at least one hole.4. The element according to claim 3 , wherein the galvanic deposition covers the shoulder of the end of the at least one hole claim 3 , which is opposite the end communicating with the at least one recess in order to block any movement of the at least one decoration relative to the body.5. The element according to claim 1 , wherein the galvanic metal deposition includes gold and/or copper and/or silver and/or indium and/or platinum and/or palladium and/or nickel.6. The element according ...

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Номер записи: 32
12-09-2013 дата публикации

MATERIAL SURFACE TREATMENT METHOD USING CONCURRENT ELECTRICAL AND PHOTONIC STIMULATION

Номер: US20130233718A1
Автор: Roarty Brian P., Walker Carol J.
Принадлежит:

A material surface treatment protocol (e.g., FIG. ) uses concurrent electronic and photonic stimulation to generate an exothermic reaction and coat the surface (e.g., FIGS. and ) of a material, such as palladium. This protocol is performed at or near the boiling point of water within a sealed vessel that prevents the escape of steam and that is lined with silica or a similar glass to increase the silica available to the reaction. The great majority of the applied energy is heat used to elevate the temperature to near the boiling point, while concurrent stimulations provide only about 100 mW of additional energy for the surface treatment. 1. A method of preparing materials at or near their surfaces , comprising:preparing a solution including a lithium silicate, in a liquid;heating and maintaining the solution at an elevated temperature to within 5° C. of the boiling point in a sealed reactor;photonically stimulating the solution with illumination from a light source; andelectrically stimulating two or more conductive electrodes immersed within the solution over an extended time period by applying a voltage between electrodes such that an exothermic reaction occurs evidenced by measured temperature increases during such electrical and photonic stimulating, at least one of the electrodes having a surface to be treated thereby and in intimate contact with a source of silicaceous material, wherein at least one electrode being treated experiences local vaporization of the solution.2. The method as in claim 1 , wherein the liquid for the solution comprises water.3. The method as in claim 2 , wherein the water is predominantly light water (HO).4. The method as in claim 2 , wherein the water is a combination of light water (HO) and heavy water (DO).5. The method as in claim 2 , wherein the water is predominantly heavy water (DO).6. The method as in claim 1 , wherein a surfactant is added to the solution.7. The method as in claim 1 , wherein a buffering agent is added to the ...

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Номер записи: 33
12-09-2013 дата публикации

Semiconductor Processing Methods

Номер: US20130237056A1
Автор: Er-Xuan Ping, Junting Liu-Norrod, Seiichi Takedai
Принадлежит: Micron Technology Inc

Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a plating bath to grow conductive contact regions within the openings. The insulative material across the back side may protect the back side from being plated during the growth of the conductive contact regions over the front side. In some embodiments, plasma-enhanced atomic layer deposition may be utilized to for the deposition, and may be conducted at a temperature suitable to anneal passivation materials so that such annealing occurs simultaneously with the plasma-enhanced atomic layer deposition.

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Номер записи: 34
19-09-2013 дата публикации

PLATED TERMINATIONS

Номер: US20130240366A1
Автор: Dattaguru Sriram, Galvagni John L., Heistand, II Robert, Ritter Andrew P.
Принадлежит: AVX CORPORATION

Improved termination features for multilayer electronic components are disclosed. Monolithic components are provided with plated terminations whereby the need for typical thick-film termination stripes is eliminated or greatly simplified. Such termination technology eliminates many typical termination problems and enables a higher number of terminations with finer pitch, which may be especially beneficial on smaller electronic components. The subject plated terminations are guided and anchored by exposed internal electrode tabs and additional anchor tab portions which may optionally extend to the cover layers of a multilayer component. Such anchor tabs may be positioned internally or externally relative to a chip structure to nucleate additional metallized plating material. External anchor tabs positioned on top and bottom sides of a monolithic structure can facilitate the formation of wrap-around plated terminations. 150-. (canceled)51. A method of forming plated terminations on a multi-layer electronic component using a self-determining process , comprising the steps of:providing electrode layers, and providing dielectric layers which are respectively interleaved with said electrode layers and which otherwise form an insulative substrate;exposing selected portions of said electrode layers; andelectrolessly plating termination material on the exposed portions of said electrode layers using said exposed portions of said electrode layers as nucleation points and guides for the termination material.52. The method of claim 51 , wherein the step of electrolessly plating is followed by an electrochemical process.53. The method of claim 51 , wherein the step of electrolessly plating includes plating termination material on the exposed portions of said electrode layers until the exposed portions of selected of said electrode layers are connected claim 51 , while otherwise spaced on said insulative substrate.54. The method of claim 53 , wherein the electrolessly plating ...

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Номер записи: 35
17-10-2013 дата публикации

Method to realize flux free indium bumping

Номер: US20130273730A1
Автор: Gaowei Xu, Le Luo, Qiuping Huang, Yuan Yuan
Принадлежит: Shanghai Institute of Microsystem and Information Technology of CAS

A method to realize flux free indium bumping process includes several steps including substrate metallization, contact holes opening, underbump metallization (UBM) layer thickening, indium bump preparation and Ag layer coating. The method can be used in the occasion for some special application, e.g., the packaging of the photoelectric chip (with optical lens), MEMS and biological detection chip, where the usage of flux is prohibited.

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Номер записи: 36
24-10-2013 дата публикации

Workpiece having glossy coating layer

Номер: US20130280553A1
Автор: Cheng-Yung Lee, Shun-Fa Kang
Принадлежит: Universal Trim Supply Co Ltd

A workpiece has a glossy coating layer disposed thereon. A barrel plating device is electrified with an alternating current, which has a voltage between 1V and 100V, a current density between 0.02 A/dm 2 and 50 A/dm 2 , and a frequency between 1 Hz to 60 KHz. The alternating current is rectified by a low ripple DC rectifier into a direct current whose ripple coefficient is between 0.3% and 26%. Thereby, a surface of the workpiece is electroplated with the glossy coating layer, which contributes to a glossy and even effect on the surface of the workpiece.

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Номер записи: 37
07-11-2013 дата публикации

Methods for improving corrosion resistance and applications in electrical connectors

Номер: US20130292161A1
Автор: Min Zheng, Rod Martens, Zhengwei Liu
Принадлежит: Tyco Electronics Corp

A method of manufacturing an electrical conductor includes providing a substrate layer, depositing a graphene layer on the substrate layer and selectively depositing boundary cappings on defects of the graphene layer to inhibit corrosion of the substrate layer at the defects. Optionally, the boundary cappings may include nano-sized crystals deposited only at the defects. The selectively depositing may include electrodepositing boundary cappings on exposed portions of the substrate layer at the defects. The selectively depositing may include reacting boundary capping material with exposed portions of the substrate layer at the defects to deposit the boundary cappings only at the defects.

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Номер записи: 38
28-11-2013 дата публикации

Cross flow manifold for electroplating apparatus

Номер: US20130313123A1
Автор: Bryan L. Buckalew, Richard Abraham, Robert Rash, Steven T. Mayer
Принадлежит: Novellus Systems Inc

The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

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Номер записи: 39
05-12-2013 дата публикации

ELECTROLYTIC COPPER PLATING SOLUTION AND METHOD OF ELECTROLYTIC COPPER PLATING

Номер: US20130319867A1
Автор: HAYASHI Shinjiro, MIZUNO Yoko, MORINAGA Toshiyuki, SAITO Mutsuko, Sakai Makoto
Принадлежит:

An electrolytic copper plating solution is provided which has an excellent via filling ability without using formaldehyde, which is harmful to the environment. An electrolytic copper plating solution which contains compounds which have an —X—S—Y— structure wherein X and Y are individually atoms selected from a group comprising hydrogen, carbon, sulfur, nitrogen, and oxygen atoms and X and Y can be the same only when they are carbon atoms and specific nitrogen-containing compounds. Good filled vias can be made without causing a worsening of the exterior appearance of the plating by using this electrolytic copper plating solution. 3. An electrolytic copper plating solution in accordance with or , which also contains levelers and carriers.43. A method of copper-electroplating substrates using electrolytic copper plating solutions in accordance with any 1 of -.5. Substrates produced by the method referred to in . This invention concerns an electrolytic copper plating solution which contains a compound containing a sulfur atom and a specific nitrogen-containing compound, as well as a method of electrolytic copper plating which uses this electrolytic copper plating solution.In recent years, a plating method known as “through-hole plating” or “via filling plating” has been used in basic production of printed circuit boards used in electronic devices such as personal computers. Electrolytic copper plating is expected to have application to through-hole and via plating, since the rate of deposition of the plating film is rapid, 10-50 μm/hr. However, if the copper is deposited on the whole inner via surfaces, the rate of deposition near the bottom of the vias must be more rapid than the rate of deposition in their opening parts in order for the inside of the vias to be filled with copper without leaving voids. If the rate of deposition near the bottoms is the same as or slower than the rate of deposition in the opening parts, either the vias will not be filled, or the opening ...

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Номер записи: 40
19-12-2013 дата публикации

PROTECTING ANODES FROM PASSIVATION IN ALLOY PLATING SYSTEMS

Номер: US20130334052A1
Автор: Chua Lee Peng, Mayer Steven T., Ponnuswamy Thomas A., PORTER David W.
Принадлежит:

An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use. 1. An apparatus for simultaneous electroplating a first metal and a second , more noble metal onto a substrate , comprising:(a) an anode chamber for containing anolyte and an active anode, said active anode comprising the first metal;(b) a cathode chamber for containing catholyte and the substrate;(c) a separation structure positioned between the anode chamber and the cathode chamber and permitting passage of ionic current during electroplating; and(d) a getter comprising a solid phase getter material that undergoes disproportionation when contacting ions of the second metal, wherein the getter is positioned to contact the anolyte but not contact the catholyte during electroplating,wherein the getter is positioned at a first distance from the cathode chamber, the active anode is positioned at a second distance from the cathode chamber, the first distance is greater than the second distance, andwherein the getter is structurally distinct from the active anode.2. The apparatus of claim 1 , wherein the first metal is tin and ...

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Номер записи: 41
19-12-2013 дата публикации

PHOTODEFINED APERTURE PLATE AND METHOD FOR PRODUCING THE SAME

Номер: US20130334339A1
Автор: Xu Hong
Принадлежит: STAMFORD DEVICES LTD.

In one embodiment, a method for manufacturing an aperture plate includes depositing a releasable seed layer above a substrate, applying a first patterned photolithography mask above the releasable seed layer, the first patterned photolithography mask having a negative pattern to a desired aperture pattern, electroplating a first material above the exposed portions of the releasable seed layer and defined by the first mask, applying a second photolithography mask above the first material, the second photolithography mask having a negative pattern to a first cavity, electroplating a second material above the exposed portions of the first material and defined by the second mask, removing both masks, and etching the releasable seed layer to release the first material and the second material. The first and second material form an aperture plate for use in aerosolizing a liquid. Other aperture plates and methods of producing aperture plates are described according to other embodiments. 1. A method for manufacturing an aperture plate , the method comprising:depositing a releasable seed layer above a substrate;applying a first patterned photolithography mask above the releasable seed layer, the first patterned photolithography mask having a negative pattern to a desired aperture pattern;electroplating a first material above the exposed portions of the releasable seed layer and defined by the first mask;applying a second photolithography mask above the first material, the second photolithography mask having a negative pattern to a first cavity;electroplating a second material above the exposed portions of the first material and defined by the second mask;removing both masks; andetching the releasable seed layer to release the first material and the second material,wherein the first material and the second material form an aperture plate for use in aerosolizing a liquid.2. The method as recited in claim 1 , wherein the first patterned photolithography mask imparts apertures ...

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Номер записи: 42
19-12-2013 дата публикации

MICROORGANISM DETECTION SENSOR AND METHOD OF MANUFACTURING THE SAME

Номер: US20130337498A1
Автор: Ikemizu Mugihei, Nagaoka Tsutomu, Shiigi Hiroshi, Takahashi Mari, Tokonami Shiho
Принадлежит:

The present invention provides a sensor including a detection unit having a detection electrode and a polymer layer that is disposed on the detection electrode and includes a mold having a three-dimensional structure complementary to a steric structure of a microorganism to be detected. The sensor detects the microorganism based on a state of capturing the microorganism in the mold. The polymer layer is formed by a manufacturing method including: a polymerization step of polymerizing a monomer in the presence of the microorganism to be detected, to form the polymer layer having captured the microorganism on the detection electrode; a destruction step of partially destroying the microorganism captured in the polymer layer; and a peroxidation step of peroxidizing the polymer layer to release the microorganism from the polymer layer. 1. A sensor comprising a detection unit including a detection electrode and a polymer layer that is disposed on said detection electrode and includes a mold having a three-dimensional structure complementary to a steric structure of a microorganism to be detected ,said sensor detecting said microorganism based on a state of capturing said microorganism in said mold, andsaid polymer layer being formed by a manufacturing method including: a polymerization step of polymerizing a monomer in presence of the microorganism to be detected, to form said polymer layer having captured said microorganism on said detection electrode; a destruction step of partially destroying the microorganism captured in said polymer layer; and a peroxidation step of peroxidizing said polymer layer to release said microorganism from said polymer layer.2. The sensor according to claim 1 , further comprising a counter electrode claim 1 , whereinsaid sensor applies an alternating-current (AC) voltage between said detection electrode of said detection unit and said counter electrode in a state where said detection unit and said counter electrode are in contact with a ...

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Номер записи: 43
02-01-2014 дата публикации

Multi-Layer Encapsulated Structures

Номер: US20140004374A1
Автор: Cohen Adam L.
Принадлежит: UNIVERSITY OF SOUTHERN CALIFORNIA

An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed. 1. A multi-layer structure , comprising:i. at least one first layer comprising at least one first planarized material;ii. at least one second layer comprising at least one core material and at least one second material, whereby the at least one second material completely surrounds the sides of the at least one core material and wherein the at least one core material is completely bounded from below by the first layer; and 'wherein the at least one core material is completely encapsulated by a combination of the at least one first planarized material, the at least one second material, and the at least one third material.', 'iii. at least one third layer comprising at least one third planarized material wherein the third layer completely bounds the at least one core material of the at least one second layer from above;'}2. The structure of wherein the at least one first material is a single material.3. The structure of wherein the at least one second material is a single material.4. The structure of wherein the at least one third material is a single material.5. The structure of wherein the at least one first material claim 4 , the at least one second material claim 4 , and the at least one third material is the same material.6. The structure of wherein the same material comprises nickel and the at least one core material comprises copper.7. The structure of wherein the at least one second layer is a single layer.8. The structure of wherein the at least one ...

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Номер записи: 44
09-01-2014 дата публикации

Articles from microarc processes and methods of manufacturing same

Номер: US20140008231A1
Автор: David Amit
Принадлежит: PCT PROTECTIVE COATING Tech Ltd

Disclosed articles as results of a microarc oxidation process, or plurality thereof, which are not limited by size, specifically by certain dimensions of their size, such as their length. Different sections or surfaces of articles of the invention may be subjected to a microarc oxidation process at any given time, such as by gradually subjecting a surface of an article to a microarc oxidation process, or such as by sequentially subjecting different sections of an articles to a microarc oxidation process. Furthermore, disclosed are methods for manufacturing of articles of the invention, or otherwise for subjecting articles of the invention to a microarc oxidation process, or plurality thereof. In some examples, tubes of above 6 meter in length may be coated according to methods of the invention. The coating of said tubes may be beneficial for desalination applications. In other examples, only grooves of pulleys are coated. Further disclosed are articles which underwent a microarc oxidation process, or plurality thereof, which included different solution, optionally by utilizing a solution modulator.

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Номер записи: 45
09-01-2014 дата публикации

METAL MEMBER AND METHOD OF MANUFACTURING SAME

Номер: US20140008232A1
Автор: Inokuchi Kohji, Mizuno Osamu, Numano Masatada
Принадлежит: Sumitomo Electric Industries, Ltd.

Provided is a metal member including a metal substrate and a covering layer disposed on a surface of the metal substrate, where the covering layer includes a region containing an insulating layer made of an insulating material, and a region containing an electrodeposited layer having a different texture from the insulating layer and formed by electrodeposition coating or electroplating. The metal member is manufactured by an insulating-layer-forming step of forming an insulating layer made of an insulating material on the entire surface of a region of the metal substrate in which the covering layer is to be formed, a removing step of removing a portion of the insulating layer to form an exposed portion of the metal substrate, and an electrodeposited-layer-forming step of applying a paint having a different texture from the insulating layer to the exposed portion by electrodeposition coating or electroplating to form an electrodeposited layer. 1. A metal member , comprising: a metal substrate; and a covering layer disposed on a surface of the metal substrate , whereinthe covering layer includesa region containing an insulating layer made of an insulating material, anda region containing an electrodeposited layer having a different texture from the insulating layer and formed by electrodeposition coating or electroplating.2. The metal member according to claim 1 , wherein the texture includes a tactile texture.3. The metal member according to claim 1 , wherein the texture includes a visual texture.4. The metal member according to claim 1 , wherein at least one of the insulating layer and the electrodeposited layer formed by electrodeposition coating is made of a resin containing an additive agent.5. The metal member according to claim 1 , whereinthe metal substrate includes a mirror-finished surface portion on a part of the surface of the metal substrate,one of the insulating layer and the electrodeposited layer formed by electrodeposition coating is made of a ...

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Номер записи: 46
09-01-2014 дата публикации

Method of Forming Electrically Isolated Structures Using Thin Dielectric Coatings

Номер: US20140008235A1
Автор: Cohen Adam L., Kumar Ananda H., Lockard Michael S., Smalley Dennis R.
Принадлежит: Microfabrica Inc.

Electrochemical fabrication processes and apparatus for producing multi-layer structures where each layer includes the deposition of at least two materials and wherein the formation of at least some layers including operations for providing coatings of dielectric material that isolate at least portions of a first conductive material from (1) other portions of the first conductive material, (2) a second conductive material, or (3) another dielectric material, and wherein the thickness of the dielectric coatings are thin compared to the thicknesses of the layers used in forming the structures. In some preferred embodiments, portions of each individual layer are encapsulated by dielectric material while in other embodiments only boundaries between distinct regions of materials are isolated from one another by dielectric barriers. 1. A method for forming a three dimensional structure from a plurality of adhered layers , comprising: (A) the dielectric material is deposited during the forming of the plurality of layers and which has a coating thickness less than a layer thickness;', '(B) the dielectric material is (i) not located between those portions of two consecutive layers where the filler material on an upper layer overlies filler material on a lower layer and (ii) not located between portions of two consecutive layers where the first conductive material on the upper layer overlies the first conductive material on the lower layer;', '(C) the dielectric material separates those portions of two consecutive layers where the filler material on the upper layer overlies the filler material on the lower layer;', '(D) the dielectric material is located in interface regions between up-facing regions of the first conductive material and down-facing regions of the filler material; or', '(E) the dielectric material is located in interface regions between up-facing regions of filler material and down-facing regions of the first conductive material., '(1) forming a plurality of ...

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Номер записи: 47
16-01-2014 дата публикации

PHOTORESIST-FREE METAL DEPOSITION

Номер: US20140014522A1
Автор: Drewery John Stephen, Mayer Steven T., Webb Eric G.
Принадлежит: NOVELLUS SYSTEMS, INC.

Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. (canceled)17. (canceled)18. (canceled)19. (canceled)20. (canceled)21. (canceled)22. (canceled)23. (canceled)24. (canceled)25. (canceled)26. (canceled)27. (canceled)28. (canceled)29. (canceled)30. (canceled)31. (canceled)32. (canceled)33. (canceled)34. (canceled)35. (canceled)36. (canceled)37. (canceled)38. (canceled)39. (canceled)40. (canceled)41. (canceled)42. (canceled)43. (canceled)44. (canceled)45. (canceled)46. (canceled)47. (canceled)48. (canceled)49. (canceled)50. (canceled)51. (canceled)52. A method comprising:selectively adsorbing in a pattern a pre-deposition agent to a substrate to form a treated region comprising the pre-deposition agent and a non-treated region not comprising the pre-deposition agent, wherein the pre-deposition agent is selected from the group consisting of deposition inhibitor and deposition inhibitor precursor; andafter selectively adsorbing in the pattern the pre-deposition agent to the substrate, plating copper on the substrate, wherein a deposition rate of the copper in the non-treated region is higher than a deposition rate of the copper in the treated region.53. The method of claim 52 , wherein the pre-deposition agent is deposition inhibitor.54. The method of claim 52 , wherein the pre-deposition agent is deposition ...

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Номер записи: 48
06-02-2014 дата публикации

SELECTIVELY COATED CRP COMPONENTS AND PROCESS FOR THE PRODUCTION THEREOF

Номер: US20140037919A1
Автор: Brinkmann Andreas, Fangmeier Armin, Kott Rouven, Lemckau Thomas, Plagemann Peter, Schroeder Simone, Zockoll Anja
Принадлежит:

A component made of carbon fiber reinforced plastic is described, consisting of or comprising a matrix material (M) and carbon fibers embedded into the matrix material (M), wherein the component has at least one surface portion (A), having one or a plurality of exposed regions of the carbon fibers, characterized in that the exposed regions(s) of the carbon fibers is or are selectively coated with a layer (S). 1. A component in carbon fiber reinforced plastic , consisting of or comprising a matrix material (M) and carbon fibers embedded into the matrix material (M) ,wherein the component has at least one surface portion (A), having one or a plurality of exposed regions of the carbon fibers, a layer of dipping paint applied by electrophoretic dip-painting', 'a layer created by electropolymerization., 'characterized in that the exposed region(s) of the carbon fibers is or are selectively coated with a layer (S), wherein the layer (S) is'}2. (canceled)3. The component as claimed in claim 1 , that can be produced by a process comprising the following steps:(i) providing a component in carbon fiber reinforced plastic, consisting of or comprising a matrix material (M) and carbon fibers embedded into the matrix material (M), wherein the component has at least one surface portion (A), having one or a plurality of exposed regions of the carbon fibers, and (a) electrophoretic dip-painting, preferably by cataphoretic dip-painting,', '(b) electropolymerization, preferably potentiostatic, galvanostatic or potentiodynamic electropolymerization, preferably potentiostatic electropolymerization,, '(ii) coating the exposed regions of the carbon fibers with a layer (S) by'}so that the exposed regions of the carbon fibers of the at least one surface portion (A) are selectively coated with a layer (S).4. The component as claimed in claim 3 , wherein the coating of the exposed regions of the carbon fibers with a layer (S) takes place by (a) electrophoretic dip-painting.5. The component as ...

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Номер записи: 49
13-02-2014 дата публикации

Freely mounted wheel set made of micro-machinable material and method of fabricating the same

Номер: US20140041477A1
Автор: Jean-Philippe Thiebaud, Pierre Cusin
Принадлежит: Nivarox Far SA

The invention relates to a gear train ( 51, 51′ ) including an arbour ( 53, 53′ ) a first end of which is fitted with an integral collar ( 52, 52′ ), a first wheel set ( 55, 55′ ) made of micro-machinable material being fitted onto the second end of the arbour ( 53, 53′ ). According to the invention, the gear train ( 51, 51′ ) includes a second wheel set ( 57, 57′ ) made of micro-machinable material, which is independent of the movements of said first wheel set and which includes an aperture ( 58, 58′ ) whose wall is mounted opposite said arbour so that the second wheel set ( 57, 57′ ) is freely mounted on said first end of the arbour ( 53, 53′ ).

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Номер записи: 50
20-02-2014 дата публикации

METHOD FOR STRUCTURING A SURFACE USING COLLOIDAL PARTICLES IN AN ELECTRIC FIELD, RESULTANT SURFACES AND USES THEREOF

Номер: US20140050885A1
Автор: Bazin Damien, Faure Chrystel
Принадлежит:

The present invention relates to a method of preparing inorganic and/or organic surfaces comprising organized micro- or nanostructures using colloidal particles in an electric field, to the micro- or nanostructured surfaces obtained by application of this method, as well as to the various applications of these structured surfaces, notably in the field of photonics, catalysis, magnetic storage or biosensors. 1. A method of preparing a surface micro- or nanostructured by organized inorganic and/or organic micro- or nanostructures , said method employing colloidal particles and an electrochemical cell having a positive electrode and a negative electrode , said electrodes being plane-parallel relative to one another , with conducting faces opposite each other , and separated from one another by an insulating spacer having at least two openings and delimiting a free volume (V) between the two electrodes , said method comprising the steps of:{'b': 1', '1, 'i) preparing a dispersion of electrically charged, monodispersed hydrophilic colloidal particles (particles P) in an aqueous phase, said particles P having a size greater than or equal to about 0.5 μm;'}{'b': 2', '2', '1', '1, 'ii) preparing a dispersion of electrically charged colloidal particles (particles P) in an aqueous phase, said particles P having a size less than that of the particles P, being of the same electric charge as the particles P, and optionally containing at least one electrochemical species;'}{'b': '1', 'iii) introducing the dispersion of particles P into the free volume (V) through one of the openings in the spacer;'}{'b': 1', '1, 'iv) causing the particles P to migrate toward the surface of the electrode of charge opposite to that of the particles P (working electrode), by applying a sinusoidal electric field perpendicularly to said electrodes,'}{'b': '1', 'v) applying a sinusoidal electric field of decreasing frequencies at constant potential, to cause aggregation of the particles P on the ...

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Номер записи: 51
27-02-2014 дата публикации

PATTERN FORMING DEVICE AND PATTERN FORMING METHOD

Номер: US20140054176A1
Автор: Matsuo Kazuaki, STOIMENOV Boyko, Suzuki Masahiro, Yamakawa Kazuyoshi
Принадлежит: JTEKT CORPORATION

A pattern forming device includes a plurality of tanks, and a power supply device. Each of the tanks has an open end having the same shape as a profile shape of a corresponding one of regions of a surface of a workpiece, in which different types of films are to be formed, and stores a corresponding one of electrodeposition solutions used to form the different types of films in a state where the open end is in contact with the surface. The power supply device applies a predetermined voltage to between the workpiece that serves as a first electrode, and each one of second electrodes in the tanks. 1. A pattern forming device that forms , by electrodeposition , different types of films in corresponding multiple regions of a surface of a workpiece to obtain a predetermined film pattern from the films , the pattern forming device comprising:a plurality of tanks each of which has an open end having the same shape as a profile shape of a corresponding one of the regions in which the different types of films are to be formed, and each of which stores a corresponding one of electrodeposition solutions used to form the different types of films in a state where the open end is in contact with the surface; anda power supply device that applies a predetermined voltage to between the workpiece that serves as a first electrode, and each one of second electrodes in the tanks.2. The pattern forming device according to claim 1 , wherein the power supply device applies the voltage to between the first electrode and the second electrodes in the tanks at the same time.3. The pattern forming device according to claim 1 , further comprising:sealing portions that prevent leakage of the electrodeposition solutions in the tanks from between the surface of the workpiece and the open ends of the tanks in the state where the open ends are in contact with the surface of the workpiece.4. The pattern forming device according to claim 2 , further comprising:sealing portions that prevent leakage of ...

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Номер записи: 52
27-02-2014 дата публикации

Semiconductor device, and method of manufacturing semiconductor device

Номер: US20140054757A1
Автор: Keiko Ikuta, Kohichi Tanda, Lianji Jin, Norihito Tsukahara, Takayuki Hirose, Toshiyuki Kojima
Принадлежит: Panasonic Corp

A semiconductor device which can reduce a heat stress to a solder layer while suppressing an increase of thermal resistance is provided. A semiconductor device includes a semiconductor element, a solder layer which is arranged on at least one surface of the semiconductor element and a lead frame which is arranged on the solder layer so that a porous nickel plating part is sandwiched between the lead frame and the solder layer. Compared with a case that the semiconductor element and the lead frame are jointed by a solder directly, an increased part of a thermal resistance of the solder junction is held down only to a part of the porous nickel plating part and a thermal resistance applied to the solder layer can be reduced.

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Номер записи: 53
06-03-2014 дата публикации

Methods for the implementation of nanocrystalline and amorphous metals and alloys as coatings

Номер: US20140061056A1
Автор: Alan C. Lund, Christopher A. Schuh
Принадлежит: Xtalic Corp

Methods for the use of nanocrystalline or amorphous metals or alloys as coatings with industrial processes are provided. Three, specific, such methods have been detailed. One of the preferred embodiments provides a method for the high volume electrodeposition of many components with a nanocrystalline or amorphous metal or alloy, and the components produced thereby. Another preferred embodiment provides a method for application of a nanocrystalline or amorphous coatings in a continuous electrodeposition process and the product produced thereby. Another of the preferred embodiments of the present invention provides a method for reworking and/or rebuilding components and the components produced thereby.

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Номер записи: 54
20-03-2014 дата публикации

DEVICE FOR SINGLE-SIDED ELECTROLYTIC TREATMENT OF A FLAT SUBSTRATE

Номер: US20140076732A1
Автор: Loermans Peter Jacobus Gerardus
Принадлежит: MECO EQUIPMENT ENGINEERS B.V.

The present invention provides a device for single-sided electrolytic treatment of a flat substrate. The device comprises a bath for electrolytic fluid and conveying means for conveying the flat substrate in a conveying direction at the free surface of the fluid in the bath, with the flat substrate being horizontally oriented such that the underside of the flat substrate makes contact with the free surface of the fluid in the bath. The conveying means comprise two conveying elements disposed opposite each other, which extend along two respective conveying paths, which conveying paths each comprise an electrolytic part, which electrolytic parts extend on two opposite longitudinal sides of the bath. 1. A device for single-sided electrolytic treatment of a flat substrate , comprising a bath for electrolytic fluid , conveying means for conveying the flat substrate in a conveying direction at the free surface of the electrolytic fluid in the bath , with the flat substrate being horizontally oriented such that the underside of the flat substrate makes contact with the free surface of the electrolytic fluid in the bath , said conveying means comprising two conveying elements disposed opposite each other , which extend along two respective conveying paths , which two conveying paths each comprise an electrolytic part , which electrolytic parts extend on two opposite longitudinal sides of the bath , wherein each of the two conveying elements comprises at least one carrier body of a dielectric material having , at least at the location of the associated electrolytic part , a support edge directed toward the bath for supporting , with an upper side thereof , the flat substrate on one side thereof , which support edge forms a moving part of a longitudinal wall of the bath , and at least one guide member of an electrically conductive material , which is connected to said at least one carrier body , for cathodically connecting the underside of the substrate on the side of the ...

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Номер записи: 55
20-03-2014 дата публикации

Method of forming channel layer of electric device and method of manufacturing electric device using the same

Номер: US20140080274A1
Автор: Jun Ho CHUN, Seok Ha LEE, Yeonkyu CHOI, Young June Park
Принадлежит: SNU R&DB FOUNDATION

A method of forming a channel layer of an electric device according to an embodiment is provided. First, a conductive substrate including an insulating layer on the substrate is provided. The conductive substrate and a metal to be plated are used as respective electrodes to carry out electroplating within an electrolyte solution. In this case, electrons provided by a tunneling current passing through the insulating layer from the conductive substrate are bonded with ions of the metal within the electrolyte solution to form a metal channel layer on the insulating layer.

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Номер записи: 56
03-04-2014 дата публикации

SUPPORTING UNIT, SUBSTRATE TREATING DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SUPPORTING UNIT

Номер: US20140091077A1
Автор: KONG Tae Kyung
Принадлежит:

Provided is a supporting unit. The supporting unit includes: a supporting plate including a substrate on a top surface thereof; and a heater having a predetermined pattern at a bottom surface of the supporting plate and heating the supporting plate, wherein the heater includes: a first metal plating layer applied on the bottom surface of the supporting plate along the predetermined pattern; an anti-oxidation layer of a conductive material applied on the first metal plating layer along the predetermined pattern; and a second metal plating layer of a conductive material applied on the anti-oxidation layer in a portion of the pattern. 1. A supporting unit comprising:a supporting plate including a substrate on a top surface thereof; anda heater having a predetermined pattern at a bottom surface of the supporting plate and heating the supporting plate,wherein the heater comprises:a first metal plating layer applied on the bottom surface of the supporting plate along the predetermined pattern;an anti-oxidation layer of a conductive material applied on the first metal plating layer along the predetermined pattern; anda second metal plating layer of a conductive material applied on the anti-oxidation layer in a portion of the predetermined pattern.2. The supporting unit of claim 1 , wherein the second metal plating layer has a thicker thickness than the anti-oxidation layer.3. The supporting unit of claim 1 , wherein the anti-oxidation layer and the second metal plating layer are formed of the same material.4. The supporting unit of claim 3 , wherein the second metal plating layer is formed of gold (Au).5. The supporting unit of claim 2 , wherein the predetermined pattern includes a terminal part that is directly connected to a wire connected to an external power claim 2 , and the first metal plating layer claim 2 , the anti-oxidation layer claim 2 , and the second metal plating layer are sequentially applied on the terminal part.6. The supporting unit of claim 2 , wherein ...

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Номер записи: 57
10-04-2014 дата публикации

ELECTRODEPOSITION OF BIAXIALLY TEXTURED LAYERS ON A SUBSTRATE

Номер: US20140100112A1
Автор: BHATTACHARYA Raghu N., CHAUDHURI Tapas, PHOK Sovannary, SPAGNOL Priscila
Принадлежит: ALLIANCE FOR SUSTAINABLE ENERGY, LLC

Methods of producing one or more biaxially textured layer on a substrate, and articles produced by the methods, are disclosed. As exemplary method may comprise electrodepositing on the substrate a precursor material selected from the group consisting of rare earths, transition metals, actinides, lanthanides, and oxides thereof. An exemplary article may comprise a biaxially textured base material, and at least one biaxially textured layer selected from the group consisting of rare earths, transition metals, actinides, lanthanides, and oxides thereof. The at least one biaxially textured layer is formed by electrodeposition on the biaxially textured base material. 1. A method of producing at least one biaxially textured layer on a substrate , comprising electrodepositing on the substrate a precursor material selected from the group consisting of rare earths , transition metals , actinides , lanthanides , and oxides thereof.2. The method of claim 1 , wherein the precursor material is selected from the group consisting of CeO claim 1 , doped CeO claim 1 , LaO claim 1 , Ir claim 1 , Ni—Ir claim 1 , Ni YSZ claim 1 , YO claim 1 , and La—Mn—O.3. The method of claim 1 , wherein the substrate is biaxially textured.4. The method of claim 1 , wherein the substrate comprises Ni.5. The method of claim 1 , wherein the substrate comprises Ni—W.6. The method of claim 1 , wherein the precursor material is CeO.7. The method of claim 1 , wherein the precursor material is a doped CeO.8. The method of claim 1 , wherein the CeOis doped with Sm claim 1 , Gd claim 1 , or Zr.9. The method of claim 1 , further comprising electrodepositing CeOon electrodeposited YO.10. The method of claim 1 , wherein electrodepositing is at a current density in the range of about 0.05 to 25 mA/cm.11. The method of claim 1 , wherein electrodepositing is during stirring of a bath containing the precursor material.12. The method of claim 1 , wherein the electrodepositing is in the range of about 20° C. to 100° C. ...

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Номер записи: 58
05-01-2017 дата публикации

Manufacturing method and manufacturing apparatus for aluminum film

Номер: US20170002474A1
Автор: Akihisa Hosoe, Hideaki Sakaida, Junichi Motomura, Junichi Nishimura, Kazuki Okuno, Kengo Goto, Koutarou Kimura
Принадлежит: Sumitomo Electric Industries Ltd

Provided are a manufacturing method and a manufacturing apparatus for an aluminum film in which moisture and oxygen do not intrude into a plating chamber. A manufacturing method for an aluminum film, in which aluminum is electrodeposited on a surface of a long, porous resin substrate imparted with electrical conductivity in a molten salt electrolytic solution, includes a step of transferring the substrate W into a plating chamber 1 through a sealing chamber 4 disposed on the entrance side of the plating chamber; a step of electrodepositing an aluminum film on the surface of the substrate W in the plating chamber 1 ; and a step of transferring the substrate having the aluminum film electrodeposited thereon from the plating chamber 1 through a sealing chamber 5 disposed on the exit side of the plating chamber 1 , in which an inert gas is supplied into the plating chamber such that the plating chamber has a positive pressure relative to outside air, and the inert gas is forcibly discharged from an inert gas exhaust pipe 7 provided on each of the two sealing chambers.

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Номер записи: 59
07-01-2016 дата публикации

METHOD OF PRODUCING SURFACE-TREATED STEEL SHEET

Номер: US20160002809A1
Автор: FUKUTOMI Satoko, HIROTSU Munemitsu, Kanazawa Seitaro, KUROKAWA Wataru, TAGUCHI Naomi, YOSHIMURA Kunihiro
Принадлежит:

A method of producing a surface-treated steel sheet is provided. The method has a step of performing electrolytic treatment thereby to form a layer including a metal-oxygen compound on a surface of a steel sheet. The electrolytic treatment is performed so that the steel sheet is continuously fed into electrolytic treatment baths each including a treatment liquid and an electrode. The treatment liquid contains metal ions. The method is characterized in that: rolls provided for each of the electrolytic treatment baths (a roll for feeding the steel sheet into the electrolytic treatment bath and a roll for feeding the steel sheet out of the electrolytic treatment bath) comprise an energized roll that is electrically connected to a power source for flowing a direct current through the steel sheet and a non-energized roll that is not connected to a power source; and the energized roll is arranged such that, once the metal-oxygen compound has been formed by electrolytic treatment on a surface of the steel sheet to be in contact with the rolls, the metal-oxygen compound and the energized roll are not in contact with each other so as not to generate an arc spot. 1. A method of producing a surface-treated steel sheet , the method comprising performing electrolytic treatment using an electrolytic treatment apparatus thereby to form a layer including a metal-oxygen compound on a surface of a steel sheet ,the electrolytic treatment apparatus having electrolytic treatment baths each comprising a treatment liquid and at least one electrode,the treatment liquid containing metal ions,the electrolytic treatment being performed in each of the electrolytic treatment baths by continuously feeding the steel sheet into each of the electrolytic treatment baths and flowing a direct current between the steel sheet and the electrode, wherein:the steel sheet is continuously fed by rolls into each of the electrolytic treatment baths, the rolls comprising a roll for feeding the steel sheet into ...

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Номер записи: 60
04-01-2018 дата публикации

Compositions Including a High Molecular Weight Acid Suitable for Conductive Polymer Formation on Dielectric Substrate

Номер: US20180002541A1
Автор: Glöckner Andreas, Rietmann Christian
Принадлежит:

The invention relates to a composition and a process for the deposition of conductive polymers on dielectric substrates. In particular, the invention relates to a composition for the formation of electrically conductive polymers on the surface of a dielectric substrate, the composition comprising at least one polymerizable monomer which is capable to form a conductive polymer, an emulsifier and an acid, characterized in that the composition comprises at least one metal-ion selected from the group consisting of lithium-ions, sodium-ions, aluminum-ions, beryllium-ions, bismuth-ions, boron-ions, indium-ions and alkyl imidazolium-ions. The acid is typically a high molecular weight polymeric acid having molecular weight of at least 500,000 Da including, for example, polystyrene sulfonic acid having a molecular weight of approximately 1,000,000 Da. 1. A composition for the formation of electrically conductive polymers on the surface of a dielectric substrate , the composition comprising:at least one polymerizable monomer which is capable of forming a conductive polymer,an emulsifier, andan acid,{'sub': x', 'y, 'wherein the composition comprises at least one metallic or nitrogenous ion selected from the group consisting of lithium-ions, sodium-ions, aluminum-ions, beryllium-ions, bismuth-ions, BO-anions, indium-ions, and alkylimidazolium-ion, and'}wherein the acid is a polymeric acid having a molecular weight of at least 500,000 Da.2. The composition according to wherein the polymeric acid has a molecular weight of at least about 600 claim 1 ,000 Da.3. The composition according to wherein the polymeric acid has a molecular weight of between about 500 claim 1 ,000 Da and about 1 claim 1 ,500 claim 1 ,000 Da.4. The composition according to claim 1 , wherein the acid comprises at least one acid and/or a salt of an acid selected from the group consisting of sulfuric acid claim 1 , sulfonic acid claim 1 , alky sulfonic acid claim 1 , polymeric sulfonic acid claim 1 , ...

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Номер записи: 61
02-01-2020 дата публикации

Copper plating solution and copper plating method

Номер: US20200002830A1
Автор: Hisamitsu Yamamoto, Tomoharu Nakayama, Yuko Yoshioka
Принадлежит: C Uyemura and Co Ltd

A copper plating solution includes: water-soluble copper salt; ethylenediamine; at least one of EDTA, a substituted derivative of EDTA, an ethylenediamine derivative, or glycine; and at least one of hydantoin or a substituted derivative thereof. The copper plating solution allows an aluminum or aluminum alloy base to be displacement-plated with copper.

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Номер записи: 62
07-01-2021 дата публикации

PLATING DEVICE AND PLATING METHOD

Номер: US20210002781A1
Автор: JODAI Kazuo, NISHIKIUCHI Hisashi
Принадлежит:

A plating device comprises: a frame body shaped to surround a region to be plated on one principal surface of a substrate; a conveying unit that conveys the substrate to a position below the frame body while supporting the other principal surface of the substrate with the region to be plated faced up; a lifting unit that relatively lifts the substrate with respect to the frame body to form a storage space for storing a plating solution by the frame body and the region to be plated; a supply unit that supplies the plating solution to the storage space; a cathode electrode configured to be electrically connected to the region to be plated; and an anode electrode configured to be held in contact with the plating solution stored in the storage space. 1. A plating device for applying a plating process to a region to be plated on one principal surface of a substrate , comprising:a frame body shaped to surround the region to be plated;a conveying unit that conveys the substrate to a position below the frame body while supporting the other principal surface of the substrate with the region to be plated faced up;a lifting unit that relatively lifts the substrate with respect to the frame body to form a storage space for storing a plating solution by the frame body and the region to be plated;a supply unit that supplies the plating solution to the storage space;a cathode electrode configured to be electrically connected to the region to be plated; andan anode electrode configured to be held in contact with the plating solution stored in the storage space, whereinthe plating process is performed by causing a current to flow between the cathode electrode and the anode electrode while the other principle surface of the substrate is supported from below by at least one of the lifting unit and the conveying unit.2. The plating device according to claim 1 , wherein:the lifting unit includes a lifting member movable upward and downward along a vertical direction and a lifting ...

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Номер записи: 63
03-01-2019 дата публикации

Plating device

Номер: US20190003069A1
Автор: Chikako Suzuki, Katsunori Akiyama, Masazumi ISHIGURO, Wataru Yamamoto
Принадлежит: Yamamoto MS Co Ltd

A plating device comprising: a water tank into which a plating solution is poured; a tubular nozzle being disposed in the water tank and serving as an anode; a to-be-plated object being disposed in the water tank so as to be opposed to the nozzle and serving as a cathode; a direct-current power source to apply a voltage between the nozzle and the to-be-plated object; and a pump to circulate the plating solution such that the plating solution poured into the water tank passes through the nozzle and is ejected onto the to-be-plated object. A perforated plate member, which includes a through-hole having a smaller diameter than the inside diameter of the nozzle, is arranged on the inflow side of the nozzle such that the through-hole is opposed to an open region of the nozzle.

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Номер записи: 64
03-01-2019 дата публикации

SYSTEMS, METHODS, AND ANODES FOR ENHANCED IONIC LIQUID BATH PLATING OF TURBOMACHINE COMPONENTS AND OTHER WORKPIECES

Номер: US20190003070A1
Автор: Chung Vincent, Piascik James, Poandl Lee
Принадлежит: HONEYWELL INTERNATIONAL INC.

Ionic liquid bath plating systems, methods, and plating anodes are provided for depositing metallic layers over turbomachine components and other workpieces. In an embodiment, the method includes placing workpieces in a plurality of cell vessels such that the workpieces are at least partially submerged in plating solution baths, which are retained within the cell vessels when the plating system is filled with a selected non-aqueous plating solution. After plating anodes are positioned adjacent the workpieces in the plating solution baths, the plurality of cell vessels are enclosed with lids such that the plurality of cell vessels contain vessel headspaces above the plating solution baths. A first purge gas is then injected into the plurality of cell vessels to purge the vessel headspaces. The workpieces and the plating anodes are then energized to deposit metallic layers on selected surfaces of the workpieces utilizing an ionic liquid bath plating process. 1. A method carried-out utilizing an ionic liquid bath plating system including a plurality of cell vessels , the method comprising:placing workpieces in the plurality of cell vessels such that the workpieces are at least partially submerged in plating solution baths, which are retained within the cell vessels when the ionic liquid bath plating system is filled with a selected non-aqueous plating solution;positioning plating anodes adjacent the workpieces in the plating solution baths;after positioning the plating anodes adjacent the workpieces, enclosing the plurality of cell vessels with lids such that the plurality of cell vessels contain vessel headspaces above the plating solution baths;after enclosing the plurality of cell vessels with lids, injecting a first purge gas into the plurality of cell vessels to purge the vessel headspaces; andenergizing the workpieces and the plating anodes to deposit metallic layers on selected surfaces of the workpieces utilizing an ionic liquid bath plating process.2. The ...

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Номер записи: 65
13-01-2022 дата публикации

DEVICE FOR MICROELECTRODEPOSITION THROUGH LASER ASSISTED FLEXIBLE FOLLOWING TOOL ELECTRODE AND DEPOSITION METHOD USING THE DEVICE THEREOF

Номер: US20220010448A1
Автор: DAI Xueren, GU Qinming, WANG Anbin, WANG Hong, Wu Yucheng, XU KUN, ZHANG Zhaoyang
Принадлежит: Jiangsu University

Disclosed are a device and a method for microelectrodeposition through a laser assisted flexible following tool electrode. Localization of electrodeposition and dimensional precision of members are enhanced by using the flexible following tool electrode to restrict a dispersion region of an electric field and a reaction region of electrodeposition, and a complex-shaped member can be deposited by controlling a motion path of the flexible following tool electrode. Since a laser has a high power density, introducing laser irradiation changes an electrode state in a radiated region, accelerates ion diffusion and electron transfer speeds, and increases a deposition rate, thus reducing defects such as pitting and cracking in a deposit, enhancing deposition quality, and achieving fabrication of a micro-part by a synergistic action of both electrochemical energy and laser energy. 1. A device for microelectrodeposition through a laser assisted flexible following tool electrode , comprising a workpiece processing system , a laser irradiation system , and a motion control system , whereinthe workpiece processing system comprises an X-Y two-coordinate workbench, a vertical lifting workbench, a direct current (DC) pulse power supply, a working tank, a flexible following tool anode, and a cathode substrate;the flexible following tool anode is connected to a positive electrode of the DC pulse power supply and is clamped by a work arm of the X-Y two-coordinate workbench; the cathode substrate is connected to a negative electrode of the DC pulse power supply; the flexible following tool anode and the cathode substrate are both arranged in an electrolyte in the working tank, and when energized, an electrochemical loop is formed; and the working tank is arranged on the vertical lifting workbench;the laser irradiation system comprises a pulsed laser, a reflector, and a focusing lens; a laser beam emitted by the pulsed laser is reflected by the reflector, then focused by the focusing ...

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Номер записи: 66
08-01-2015 дата публикации

METHODS FOR THE IMPLEMENTATION OF NANOCRYSTALLINE AND AMORPHOUS METALS AND ALLOYS AS COATINGS

Номер: US20150008135A1
Автор: Lund Alan C., Schuh Christopher A.
Принадлежит: Xtalic Corporation

Methods for the use of nanocrystalline or amorphous metals or alloys as coatings with industrial processes are provided. Three, specific, such methods have been detailed. One of the preferred embodiments provides a method for the high volume electrodeposition of many components with a nanocrystalline or amorphous metal or alloy, and the components produced thereby. Another preferred embodiment provides a method for application of a nanocrystalline or amorphous coatings in a continuous electrodeposition process and the product produced thereby. Another of the preferred embodiments of the present invention provides a method for reworking and/or rebuilding components and the components produced thereby. 120-. (canceled)21. A method of manufacturing a component strip , comprising:applying a nanocrystalline or amorphous material coating to a component strip,wherein the component strip includes a series of components along a length of the strip, wherein the nanocrystalline or amorphous material coating comprises a nickel-tungsten alloy,wherein the nanocrystalline or amorphous material coating is applied through an electrodeposition process, said electrodeposition process comprised of a beginning portion of the component strip entering an electrodeposition bath before an adjoining portion of the component enters the electrodeposition bath and the beginning portion of the component strip also exiting the electrodeposition bath before the adjoining portion of the component strip exits the electrodeposition bath.22. The method according to claim 21 , wherein the component strip travels through the bath continuously.23. The method according to claim 21 , wherein the component strip to be coated is fed from a reel.24. The method according to claim 23 , wherein the coated component strip is collected on a reel.25. The method according to claim 21 , wherein the component strip is an electrode in the electrodeposition process.26. The method according to claim 21 , wherein the ...

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Номер записи: 67
20-01-2022 дата публикации

LOW TEMPERATURE DIRECT COPPER-COPPER BONDING

Номер: US20220018036A1
Автор: Banik, Buckalew Bryan L., II Stephen J., OBERST Justin, Ponnuswamy Thomas Anand, Thorkelsson Kari
Принадлежит:

Direct copper-copper bonding at low temperatures is achieved by electroplating copper features on a substrate followed by electroplanarizing the copper features. The copper features are electroplated on the substrate under conditions so that nanotwinned copper structures are formed. Electroplanarizing the copper features is performed by anodically biasing the substrate and contacting the copper features with an electrolyte so that copper is electrochemically removed. Such electrochemical removal is performed in a manner so that roughness is reduced in the copper features and substantial coplanarity is achieved among the copper features. Copper features having nanotwinned copper structures, reduced roughness, and better coplanarity enable direct copper-copper bonding at low temperatures. 1. A method of preparing copper features for direct copper-copper bonding , the method comprising:forming a plurality of first copper features on a first substrate, each of the plurality of first copper features having nanotwinned copper structures; andelectroplanarizing the plurality of first copper features by electrochemically removing a portion of exposed copper from the first copper features prior to directly bonding the first substrate to a second substrate having a plurality of second copper features disposed on the second substrate.2. The method of claim 1 , further comprising:forming the plurality of second copper features on the second substrate, each of the plurality of second copper features having nanotwinned copper structures; andelectroplanarizing the plurality of second copper features by electrochemically removing a portion of exposed copper from the second copper features.3. The method of claim 1 , wherein electroplanarizing the plurality of first copper features comprises:anodically biasing the first substrate and contacting the plurality of first copper features with an electrolyte.4. The method of claim 3 , wherein anodically biasing the first substrate and ...

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Номер записи: 68
07-01-2016 дата публикации

METHOD FOR FORMING ELECTRICALLY CONDUCTIVE ULTRAFINE PATTERN, ELECTRICALLY CONDUCTIVE ULTRAFINE PATTERN, AND ELECTRIC CIRCUIT

Номер: US20160007477A1
Автор: Fujikawa Wataru, Katayama Yoshinori, Katsuta Haruhiko, MURAKAWA Akira, Saitou Yukie, Shirakami Jun, Yoshihara Sunao
Принадлежит: DIC CORPORATION

There is provided a method for forming an electrically conductive ultrafine pattern which has an excellent pattern cross-sectional shape is provided by a composite technique including a printing process and a plating process, and furthermore, by imparting excellent adhesion to each interface of a laminate including a plating core pattern, an electrically conductive ultrafine pattern which can be preferably used as a highly accurate electric circuit and a method for manufacturing the same are also provided. The method includes (1) a step of applying a resin composition to form a receiving layer on a substrate; (2) a step of printing an ink containing plating core particles by a reverse offset printing method to form a plating core pattern on the receiving layer; and (3) a step of depositing a metal on the plating core pattern formed in the step (2) by an electrolytic plating method. 1. A method for forming an electrically conductive ultrafine pattern , the method comprising:(1) a step of applying a resin composition (a) to form a receiving layer (A) on a substrate;(2) a step of printing an ink (b) containing particles (b1) to be formed into plating cores by a reverse offset printing method to form a plating core pattern (B) on the receiving layer (A); and(3) a step of depositing a metal on the plating core pattern (B) formed in the step (2) by an electrolytic plating method.2. The method for forming an electrically conductive ultrafine pattern according to claim 1 , wherein the resin composition (a) includes a urethane resin (a1) having a weight average molecular weight of 5 claim 1 ,000 or more or a vinyl resin (a2) claim 1 , and a medium (a3).3. The method for forming an electrically conductive ultrafine pattern according to claim 2 , wherein the urethane resin (a1) has a hydrophilic group and 2 claim 2 ,000 to 5 claim 2 ,500 mmol/kg of an aliphatic cyclic structure with respect to the total mass.4. The method for forming an electrically conductive ultrafine ...

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Номер записи: 69
04-01-2018 дата публикации

LAMINATE PRODUCTION METHOD

Номер: US20180007800A1
Автор: Fujita Shigeru, SHINDOU Natsuko
Принадлежит:

To provide a manufacturing method of a laminate body, including: a step of forming onto a supporting body a curable resin composition layer formed from a thermosetting resin composition to obtain a curable resin composition layer with a supporting body; a step of laminating the curable resin composition onto a substrate on a curable resin composition layer forming surface side to obtain a pre-cured composite with a supporting body formed from a substrate and a curable resin composition layer with a supporting body; a step of performing a first heating of the pre-cured composite and thermally curing the curable resin composition layer to obtain a cured composite with a supporting body formed from a substrate and a cured resin layer with a supporting body; a step of performing hole punching from the supporting body side of the cured composite with a supporting body to form a via hole in the cured resin layer; step of removing resin residue in the via hole of the cured composite with a supporting body; a step of peeling the supporting body from the cured composite with a supporting body to obtain a cured composite formed from a substrate and a cured resin layer, and a step of forming a dry plated conductor layer by dry plating on an inner wall surface of the via hole of the cured composite and on the cured resin layer. 1. A manufacturing method of a laminate body , comprising:a first operation of forming onto a supporting body a curable resin composition layer formed from a thermosetting resin composition to obtain a curable resin composition layer with a supporting body;a second operation of laminating the aforementioned curable resin composition layer with a supporting body onto a substrate on a curable resin composition layer forming surface side to obtain a pre-cured composite with a supporting body formed from a substrate and a curable resin composition layer with a supporting body;a third operation of performing heating of the aforementioned composite and ...

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Номер записи: 70
20-01-2022 дата публикации

METHOD AND DEVICE FOR PLATING A RECESS IN A SUBSTRATE

Номер: US20220020591A1
Автор: ENGESSER Philipp, GLEISSNER Andreas, Knoll Oliver, Markut Franz, Okom-Schmidt Harald, WIRNSBERGER THOMAS
Принадлежит: Semsysco GmbH

The teaching relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate includes the following: 110. A method for plating a recess in a substrate () , comprising the following steps:{'b': 10', '11, 'providing a substrate () with a substrate surface () comprising at least one recess,'}{'b': 30', '20', '20, 'applying a replacement gas () to the recess to replace an amount of ambient gas () in the recess to at least partially clear the recess from the ambient gas (),'}{'b': 40', '30', '40', '30, 'applying a processing fluid () to the recess, wherein the replacement gas () dissolves in the processing fluid () to at least partially clear the recess from the replacement gas (), and'}{'b': '10', 'plating the recess in the substrate ().'}23040. Method according to claim 1 , wherein the replacement gas () and the processing fluid () essentially remove any gaseous barrier in the recess before plating the recess.3304020. Method according to claim 2 , wherein the replacement gas () has at a processing temperature a higher solubility in the processing fluid () than the ambient gas ().43040. Method according to claim 3 , wherein the ambient gas is air and the Henry's law solubility constant Hof the replacement gas () in the processing fluid () at room temperature is larger than 6.4×10mol mPa claim 3 , preferably equal to or larger than 1.2×10mol mPaand more preferably equal to or larger than 3.3×10mol mPa53040. Method according to claim 4 , wherein the replacement gas () comprises COand the processing fluid () is essentially water.6. Method according to claim 5 , wherein the plating is an at least partial filling of the recess with an alloy or a metal and in particular with copper claim 5 , nickel claim 5 , indium claim 5 , or cobalt.740401040aa. Method according to claim 6 , wherein the processing fluid () is a plating ...

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Номер записи: 71
20-01-2022 дата публикации

METHOD FOR PRODUCING PACKAGE SUBSTRATE FOR LOADING SEMICONDUCTOR DEVICE

Номер: US20220020602A1
Автор: HIRANO Syunsuke, Kato Yoshihiro, Ogashiwa Takaaki
Принадлежит: MITSUBISHI GAS CHEMICAL COMPANY, INC.

A method for manufacturing a package substrate including an insulating layer and a wiring conductor, including: forming, on one or both sides of a core resin layer, a substrate including a peelable first metal layer that has a thickness of 1-70 μm, a first insulating resin layer, and a second metal layer; forming a non-through hole reaching a surface of the first metal layer, performing electrolytic and/or electroless copper plating on its inner wall, and connecting the second and first metal layers; arranging a second insulating resin layer and a third metal layer and heating and pressurizing the first substrate to form a substrate; forming a non-through hole reaching a surface of the second metal layer, performing electrolytic and/or electroless copper plating on its inner wall, and connecting the second and third metal layers; peeling a third substrate; and patterning the first and third metal layers to form the wiring conductor. 1. A method for manufacturing a package substrate for mounting a semiconductor device comprising an insulating layer and a wiring conductor provided on the insulating layer , the method comprising:forming a first substrate comprising a first metal layer that has a thickness of 1 μm to 70 μm and that is peelable from the core resin layer, a first insulating resin layer, and a second metal layer in this order on one side or both sides of a core resin layer;forming a non-through hole reaching a surface of the first metal layer on a surface of the first substrate, carrying out electrolytic copper plating and/or electroless copper plating on an inner wall of the non-through hole, and connecting the second metal layer and the first metal layer;forming a second substrate by heating and pressurizing a laminate formed by arranging a second insulating resin layer and a third metal layer in this order on a surface of the second metal layer of the first substrate;forming a non-through hole reaching the surface of the second metal layer on a surface ...

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Номер записи: 72
08-01-2015 дата публикации

Method for Marking a Tool

Номер: US20150010707A1
Автор: LIN Jian- Liang
Принадлежит:

A method is provided for marking a tool. The method includes the steps of providing a dented mark in the tool, providing a first protection layer on the tool except the dented mark, and providing a second protection layer on the first protection layer. The first and second protection layers are made of colors that are selected so that when there is a scratch in the second protection layer, a color shown in the scratch is similar to the color of the second protection layer. 1. A method for marking a tool including the steps of providing a dented mark in the tool , providing a first protection layer on the tool except the dented mark , and providing a second protection layer on the first protection layer , wherein the first and second protection layers are made of colors that are selected so that when there is a scratch in the second protection layer , a color shown in the scratch is similar to the color of the second protection layer.2. The method according to claim 1 , wherein the color of the first protection layer is at least similar to that of the second protection layer.3. The method according to claim 2 , wherein the first protection layer is a black film of manganese phosphate provided by bonderizing claim 2 , wherein the protection layer is a black film provided by dying.4. The method according to claim 1 , wherein the first protection layer is transparent while the color of the second protection layer is at least similar to that of the tool.5. The method according to claim 4 , wherein the first protection layer is a transparent film of zinc phosphate provided by bonderizing while the protection layer is a metallic film provided by electroplating.6. The method according to claim 1 , wherein the color of the first protection layer is at least similar to that of the tool while the second protection layer is transparent.7. The method according to claim 1 , including the step of subjecting the bit to heat treatment after the step of providing the dented mark on ...

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Номер записи: 73
14-01-2016 дата публикации

Coating and coating method for gas turbine engine component

Номер: US20160010472A1
Автор: Basta William C., Murphy Kenneth S.
Принадлежит: Howment Corporation

The present invention provides a protective coating for a gas turbine blade or other component wherein the duplex coating includes an aluminum-bearing coating, such as a diffusion aluminide, formed on a first, relatively higher temperature region of the blade/component and a later-applied chromium-bearing diffusion coating formed on an adjacent relatively lower temperature region of the blade/component subject to hot corrosion in service. The chromium-bearing coating is applied after the aluminum-bearing coating by masking that coating and depositing a metallic chromium coating on the adjacent region followed by diffusing the chromium into the blade/component alloy to form a chromium-enriched diffusion coating thereon. 1. A method of forming a coating on a substrate , comprising the steps of first applying an aluminum-bearing coating on a first region of the substrate , then depositing a metallic coating comprising chromium on the substrate , and then diffusing the chromium into the substrate to form a chromium-enriched diffused layer thereon.2. The method of including applying masking on said second region before the aluminum-bearing coating is applied.3. The method of including applying masking on the aluminum-bearing coating before applying the metallic coating.4. The method of including applying the aluminum-bearing coating on both said first region and second region followed by removal of the aluminum-bearing coating from said adjacent region before the metallic coating is applied.5. The method of wherein the metallic coating is applied using a liquid deposition medium.6. The method of wherein the liquid deposition medium is a electroplating bath or electrophoretic bath.7. The method of wherein the liquid deposition medium is a slurry of chromium-bearing particles.8. The method of wherein the aluminum-bearing coating is applied as a diffusion aluminide.9. A method of forming a duplex coating on a nickel or cobalt based alloy turbine blade claim 1 , comprising ...

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Номер записи: 74
10-01-2019 дата публикации

PHOTOELECTRODE, METHOD OF MANUFACTURING THE SAME, AND PHOTOELECTROCHEMICAL REACTION DEVICE INCLUDING THE SAME

Номер: US20190010617A1
Автор: KITAGAWA Ryota, Kudo Yuki, Mikoshiba Satoshi, ONO Akihiko, Sugano Yoshitsune, Tamura Jun, TSUTSUMI Eishi, Yamagiwa Masakazu
Принадлежит: KABUSHIKI KAISHA TOSHIBA

A method of manufacturing a photoelectrode of an embodiment includes: preparing a stack including a first electrode layer having a light transmitting electrode, a second electrode layer having a metal electrode, and a photovoltaic layer disposed between the electrode layers; immersing the stack in an electrolytic solution containing an ion including a metal constituting a catalyst layer which is to be formed on the first electrode layer; and passing a current to the stack through the second electrode layer to electrochemically precipitate at least one selected from the metal and a compound containing the metal, onto the first electrode layer, thereby forming the catalyst layer. 1. A method for manufacturing an electrode , the method comprising:preparing a stack comprising a first electrode layer, a second electrode layer comprising a metal electrode, and a voltaic layer disposed between the first electrode layer and the second electrode layer, the voltaic layer comprising a pin junction or a pn junction of semiconductors;immersing the stack in an electrolytic solution comprising an ion comprising a metal constituting at least part of a catalyst layer which is to be formed on the first electrode layer; andpassing a current to the stack immersed in the electrolytic solution through the second electrode layer to electrochemically precipitate at least one selected from the group consisting of the metal and a compound comprising the metal, onto the first electrode layer.2. The method of claim 1 ,wherein the electrolytic solution comprises: at least one cation selected from the group consisting of an ion of the metal, an oxide ion of the metal, and a complex ion of the metal; and at least one anion selected from the group consisting of an inorganic acid ion and a hydroxide ion, andwherein a counter electrode is immersed in the electrolytic solution to face the stack immersed in the electrolytic solution, and at least one selected from the group consisting of the metal, a ...

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Номер записи: 75
10-01-2019 дата публикации

Cobalt Filling of Interconnects

Номер: US20190010624A1
Автор: Commander John, JR. Vincent, Paneccasio, Sun Shaopeng, Whitten Kyle, Yakobson Eric
Принадлежит:

Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features. 1. A composition for the electrolytic deposition of cobalt comprising:a source of cobalt ions;a suppressor compound;a buffering agent; andone or more of a depolarizing compound and a uniformity enhancer;wherein the composition has a concentration of divalent sulfur compounds of less than 1 mg/l; andwherein the composition is free of nickel ions.2. A composition according to claim 1 , wherein the composition is free of any functional concentration of reducing agents that are capable of reducing cobaltous ions (Co) to metallic cobalt (Co).3. A composition according to further comprising a stress reducer claim 1 , wherein the stress reducer comprises saccharin.4. A composition according to claim 3 , wherein the stress reducer comprises saccharin at a concentration of between about 10 and about 300 ppm.5. (canceled)6. A composition according to claim 1 , wherein the suppressor is selected from the group consisting of propargyl alcohol claim 1 , ethoxylated propargyl alcohol claim 1 , a reaction product of ethoxylated propargyl alcohol and 1 claim 1 ,4-butanediol diglycidyl ether claim 1 , diethylene glycol bis(2-propynyl) ether claim 1 , 1 claim 1 ,4-bis(2-hydroxyethoxy)-2-butyne claim 1 , 2-butyne-1 claim 1 ,4-diol claim 1 , ethoxylated and/or propoxylated propargyl alcohol compounds and combinations of ...

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Номер записи: 76
11-01-2018 дата публикации

Self-aligned spatial filter

Номер: US20180011335A1
Автор: Michael Yagoda SHAGAM, Robert Joseph WALTERS
Принадлежит: Integrated Plasmonics Corp

A spatial filter is made by forming a structure comprising a focusing element and an opaque surface, the opaque surface being disposed remotely from the focusing element in substantially the same plane as a focal plane of the focusing element; and by forming a pinhole in the opaque surface at or adjacent to a focal point of the focusing element by transmitting a substantially collimated laser beam through the focusing element so that a point optimally corresponding to the focal point is identified on the opaque surface and imperfection of the focusing element, if any, is reflected on the shape and position of the pinhole so formed.

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Номер записи: 77
09-01-2020 дата публикации

COPPER ELECTROPLATING COMPOSITIONS AND METHODS OF ELECTROPLATING COPPER ON SUBSTRATES

Номер: US20200010970A1
Автор: POKHREL Ravi
Принадлежит:

Copper electroplating compositions which include an imidazole compound enables the electroplating of copper having uniform morphology on substrates. The composition and methods of enable copper electroplating of photoresist defined features. Such features include pillars, bond pads and line space features. 2: The composition of claim 1 , wherein the one or more imidazole compounds are in amounts of 0.25 ppm to 1000 ppm.3: The composition of claim 1 , wherein R claim 1 , R claim 1 , R claim 1 , R claim 1 , Rand Rare independently chosen from hydrogen; and (C-C)alkyl.4: The composition of claim 3 , wherein R claim 3 , R claim 3 , Rand Rare independently chosen from hydrogen; and methyl; and Rand Rare hydrogen.59-. (canceled) The present invention is directed to copper electroplating compositions and methods of electroplating copper on substrates, wherein the copper electroplating compositions include an imidazole compound to provide copper deposits having uniform morphology. More specifically, the present invention is directed to copper electroplating compositions and methods of electroplating copper on substrates, wherein the copper electroplating compositions include an imidazole compound to provide copper deposits having uniform morphology and wherein the copper electroplating compositions and copper electroplating methods can be used to electroplate photoresist defined features.Photoresist defined features include copper pillars and redistribution layer wiring such as bond pads and line space features for integrated circuit chips and printed circuit boards. The features are formed by the process of lithography where a photoresist is applied to a substrate such as a semiconductor wafer chip often referred to as a die in packaging technologies, or epoxy/glass printed circuit boards. In general, the photoresist is applied to a surface of the substrate and a mask with a pattern is applied to the photoresist. The substrate with the mask is exposed to radiation such as ...

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Номер записи: 78
09-01-2020 дата публикации

METHOD FOR FORMING PLATING

Номер: US20200010971A1
Автор: Fujioka Yuhei, Sakamoto Ichizo, Suzuki Masafumi
Принадлежит: Omron Corporation

A plating is formed on one side of a cathode by applying a paste composed of particles mixed with a plating liquid to one side of the cathode, disposing a liquid holding member impregnated with the plating liquid on one side of an anode, opposing the cathode and the anode face, and then bringing the liquid holding member and the paste into contact with each other, and applying a voltage between the cathode and the anode. 1. A method for forming a plating , the method forming a plating on one side of a cathode by:applying, to the side of the cathode, a paste obtained by mixing particles with a plating liquid;disposing a liquid holding member impregnated with the plating liquid on one side of an anode;opposing the cathode and the anode, and then bringing the liquid holding member and the paste into contact with each other; andapplying a voltage between the cathode and the anode,wherein the particles comprise either a metal or a resin.2. The method according to claim 1 , wherein the paste is mixed with a surfactant.3. (canceled)4. The method for forming a plating according to claim 1 , wherein the particles have a particle size of 0.02 μm or more and 0.6 μm or less.5. The method for forming a plating according to claim 1 , wherein the particles are 10% by weight or more and 72% by weight or less with respect to the paste.6. The method for forming a plating according to claim 1 , wherein the liquid holding member is a sponge.7. The method for forming a plating according to claim 2 , wherein the particles have a particle size of 0.02 μm or more and 0.6 μm or less.8. The method for forming a plating according to claim 2 , wherein the particles are 10% by weight or more and 72% by weight or less with respect to the paste.9. The method for forming a plating according to claim 4 , wherein the particles are 10% by weight or more and 72% by weight or less with respect to the paste.10. The method for forming a plating according to claim 2 , wherein the liquid holding member is ...

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Номер записи: 79
12-01-2017 дата публикации

PRETREATMENT METHOD FOR PHOTORESIST WAFER PROCESSING

Номер: US20170011906A1
Автор: Buckalew Bryan L., Rea Mark L.
Принадлежит:

Certain embodiments herein relate to methods and apparatus for processing a partially fabricated semiconductor substrate in a remote plasma environment. The methods may be performed in the context of wafer level packaging (WLP) processes. The methods may include exposing the substrate to a reducing plasma to remove photoresist scum and/or oxidation from an underlying seed layer. In some cases, photoresist scum is removed through a series of plasma treatments involving exposure to an oxygen-containing plasma followed by exposure to a reducing plasma. In some embodiments, an oxygen-containing plasma is further used to strip photoresist from a substrate surface after electroplating. This plasma strip may be followed by a plasma treatment involving exposure to a reducing plasma. The plasma treatments herein may involve exposure to a remote plasma within a plasma treatment module of a multi-tool electroplating apparatus. 1. A method of removing photoresist scum and electroplating metal into photoresist features , the method comprising: (i) at least one plasma treatment module comprising a plasma treatment chamber and a plasma generation chamber connected to the plasma treatment chamber; and', '(ii) at least one electroplating module comprising an electroplating chamber;', 'wherein the substrate comprises:', '(i) a metal seed layer, and', '(ii) a layer of photoresist over and directly in contact with the metal seed layer, wherein the layer of photoresist comprises photoresist features patterned therein, and wherein a bottom of the photoresist features comprise photoresist scum;, '(a) receiving a substrate in a multi-tool electroplating apparatus, the multi-tool electroplating apparatus comprising(b) generating a reducing plasma from a reducing plasma generation gas in the plasma generation chamber;(c) flowing the reducing plasma from the plasma generation chamber into the plasma treatment chamber to thereby expose the substrate to the reducing plasma, react the ...

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Номер записи: 80
15-01-2015 дата публикации

Plated instrumentation probes and sensors

Номер: US20150013480A1
Автор: Grant O. Cook, Iii, Shari L. Bugaj, Wendell V. Twelves, Jr.
Принадлежит: United Technologies Corp

A component comprises a non-metallic core having an outer surface, a first catalyst deposited onto at least a first portion of the outer surface of the non-metallic core, a second catalyst deposited onto at least a second portion of the outer surface of the non-metallic core, an electrical interface, and a metallic coating. The electrical interface is plated onto the first catalyst, and includes a first interface layer electroless plated onto the first catalyst. The metallic coating is plated onto the second catalyst.

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Номер записи: 81
10-01-2019 дата публикации

METHOD OF MANUFACTURING NANOWIRE GRID POLARIZER

Номер: US20190011770A1
Автор: HOU Jun
Принадлежит:

The present disclosure provides a method of manufacturing a nanowire grid polarizer, including the steps as follows: S1, providing a nanoimprint mold and filling the nanoimprint mold by using a photoresist material to obtain a nanoimprint component; S2, pairing the nanoimprint component and a conductive substrate to cure the photoresist material on a surface of the conductive substrate, removing the nanoimprint mold and forming a nano photoresist array on the surface of the conductive substrate; wherein the nano photoresist array has a first void array therebetween; and S3, depositing a metal in the first void array by using an electrodeposition method and removing the nano photoresist array, and forming a nanowire grid on the surface of the conductive substrate to obtain the nanowire grid polarizer. According to the manufacturing method of the present disclosure, an etching process is avoided, and metals of different materials and different sizes may be deposited according to the needs, moreover, a growth speed of the metal may be controlled by adjusting the electrodeposition parameters, and it is easy to obtain the nanowire grid with a short cycle and a high depth-to-width ratio, thereby obtaining a better polarizing effect in application. 1. A method of manufacturing a nanowire grid polarizer , comprising the steps as follows:S1, providing a nanoimprint mold and filling the nanoimprint mold by using a photoresist material to obtain a nanoimprint component;S2, pairing the nanoimprint component and a conductive substrate to cure the photoresist material on a surface of the conductive substrate, removing the nanoimprint mold and forming a nano photoresist array on the surface of the conductive substrate; wherein the nano photoresist array has a first void array therebetween; andS3, depositing a metal in the first void array by using an electrodeposition method and removing the nano photoresist array, and forming a nanowire grid on the surface of the conductive ...

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Номер записи: 82
15-01-2015 дата публикации

PERPENDICULAR WRITE HEAD WITH LAMINATED SIDE SHIELDS

Номер: US20150014174A1
Автор: Hutchinson Christina Laura, Seets David Christopher
Принадлежит:

A perpendicular write head, the write head having an air bearing surface, the write head including a magnetic write pole, wherein at the air bearing surface, the write pole has a trailing side, a leading side that is opposite the trailing side, and first and second sides; side gaps, wherein the side gaps are proximate the write pole along the first and second side edges; and side shields proximate the side gaps, wherein the side shields have gap facing surfaces and include at least one set of alternating layers of magnetic and non-magnetic materials, wherein only one kind of material makes up the gap facing surfaces at the air bearing surfaces. 120-. (canceled)21. A method of forming laminated side shields comprising the steps of:forming a conductive seedlayer;forming a block that encapsulates the conductive seedlayer, the block having vertical side walls and a top;forming a layer of magnetic material on at least one of the vertical side walls of the block by electroplating; andforming a layer of non-magnetic material on the layer of magnetic material by electroplating.22. The method according to claim 21 , wherein the conductive seedlayer is formed on or within a substrate.23. The method according to claim 22 , wherein the substrate is configured to allow electrical connection to the conductive seedlayer.24. The method according to claim 23 , wherein the conductive seedlayer is grounded to the substrate.25. The method according to claim 23 , wherein the conductive seedlayer is formed in electrical contact with a conductive non-plating trace.26. The method according to claim 21 , wherein the conductive seedlayer comprises Ru claim 21 , NiFe claim 21 , NiP claim 21 , or combinations thereof.27. The method according to claim 25 , wherein the conductive non-plating trace comprises chromium or tantalum.28. The method according to claim 21 , wherein the block comprises a conductive material.29. The method according to claim 28 , wherein the conductive material comprises ...

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Номер записи: 83
15-01-2015 дата публикации

WAFER PROCESSING APPARATUS HAVING SCROLL PUMP

Номер: US20150014176A1
Автор: Thompson Raymon F.
Принадлежит:

A wafer processing apparatus is disclosed that includes a wafer support and a processing base. The wafer support is configured to support a wafer at a processing position with respect to a processing base. The processing base includes a scroll pump oriented to pump a processing fluid in a substantially perpendicular direction with respect to the surface of the wafer when the wafer contacts the processing fluid while in the processing position. While in contact with the processing fluid, the wafer support may rotate the wafer in the processing fluid. In one embodiment, the diameter of the scroll pump is substantially the same as or greater than the diameter of the surface of the wafer being processed. 1. A wafer processing apparatus comprising:a wafer support configured to support a wafer; anda processing base having a scroll pump oriented to pump a processing fluid in a substantially perpendicular direction with respect to the surface of the wafer.2. The wafer processing apparatus of claim 1 , wherein the diameter of the scroll pump is substantially the same as or greater than the diameter of the surface of the wafer.3. The wafer processing apparatus of claim 1 , wherein the first scroll is fixed and the second scroll oscillates with respect to the first scroll.4. The wafer processing apparatus of claim 3 , wherein the first scroll is configured as the anode.5. The wafer processing apparatus of claim 3 , wherein the processing base includes a motor including a rotor having a cam claim 3 , wherein the cam is configured to engage a cam follower disposed at a bottom portion of the second scroll to oscillate the second scroll with respect to the first scroll.6. The wafer processing apparatus of claim 1 , wherein the first scroll and second scroll are configured to co-rotate in synchronous motion at offset centers of rotation.7. The wafer processing apparatus of claim 1 , wherein the processing base is configured to selectively provide the processing fluid to the scroll ...

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Номер записи: 84
11-01-2018 дата публикации

PHOTOVOLTAIC CELL WITH POROUS SEMICONDUCTOR REGIONS FOR ANCHORING CONTACT TERMINALS, ELECTROLITIC AND ETCHING MODULES, AND RELATED PRODUCTION LINE

Номер: US20180012782A1
Автор: Balucani Marco
Принадлежит:

A photovoltaic cell is proposed. The photovoltaic cell includes a substrate of semiconductor material, and a plurality of contact terminals each one arranged on a corresponding contact area of the substrate for collecting electric charges being generated in the substrate by the light. For at least one of the contact areas, the substrate includes at least one porous semiconductor region extending from the contact area into the substrate for anchoring the whole corresponding contact terminal on the substrate. In the solution according to an embodiment of the invention, each porous semiconductor region has a porosity decreasing moving away from the contact area inwards the substrate. An etching module and an electrolytic module for processing photovoltaic cells, a production line for producing photovoltaic cells, and a process for producing photovoltaic cells are also proposed. 1. A method for performing an electrolytic process continually on a batch of substrates , the method including:delivering a solution through at least one delivery mouth of each of a set of electrolytic heads on an operative surface of a support element of the electrolytic head being made at least partially of an electrically conductive material configured to contact the electrolytic solution, the processing heads including an electrolytic head with the solution being delivered by said at least one delivery mouth of the electrolytic head being an electrolytic solution,sucking the delivered solution through at least one suction mouth arranged around said at least one delivery mouth on the operative surface using a suction pump that creates a depression at the suction mouth thereby forming a dynamic drop on the operative surface in a fixed position with a content of the dynamic drop that is continuously refreshed thanks to a flow of the solution from the delivery mouth to the suction mouth, the dynamic drop being formed by a portion of the solution that remains attached to the operative surface ...

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Номер записи: 85
19-01-2017 дата публикации

Electrodermal Activity Sensor

Номер: US20170014043A1
Автор: Daragh Mcdonnell
Принадлежит: Galvanic Ltd

The present invention is directed towards a method of manufacturing a sensor disc for use as a dry electrode in a skin conductance measuring device, the sensor disc comprising a plurality of layers of different materials and the method of manufacturing comprising the steps of etching a copper base layer; electroplating the copper base layer with an intermediate bright copper layer; plating the intermediate bright copper layer with an intermediate palladium plated layer; and, plating the intermediate palladium plated layer with a gold plated surface layer. The advantage of a method of manufacturing a sensor disc in accordance with the present invention is that a roughened surface is created by the etching. This increased roughness corresponds to an increase in surface area of skin in contact with the sensor disc. The larger contact area implies a larger sweat layer between skin and metal, resulting in reduced electrical impedance and hence an improvement in the signal-to-noise ratio of the skin conductance signal detected by the sensor disc. Furthermore, the surface roughness assists in trapping the sweat, also leading to reduced impedance and an improvement in the signal-to-noise ratio of the detected signals. Moreover, in addition to the high performance of the sensor discs manufactured by this process, the sensor discs produced also meet the ergonomic and aesthetic expectations of a contemporary mass market and may be advantageously utilized in a consumer electronics product.

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Номер записи: 86
09-01-2020 дата публикации

Formation of Fine Pitch Traces Using Ultra-Thin PAA Modified Fully Additive Process

Номер: US20200013700A1
Автор: Cheung Chee Wah, Pun Kelvin Po Leung
Принадлежит:

A method to produce a substrate suitable for diffusion bonding is described. A flexible dielectric substrate is provided. An alkaline modification is applied to the dielectric substrate to form a polyamic acid (PAA) anchoring layer on a surface of the dielectric substrate. A Ni—P seed layer is electrolessly plated on the PAA layer. Copper traces are plated within a photoresist pattern on the Ni—P seed layer. A surface finishing layer is electrolytically plated on the copper traces. The photoresist pattern and Ni—P seed layer not covered by the copper traces are removed to complete the substrate suitable for diffusion bonding. 1. A method of manufacturing a flexible substrate comprising:providing a flexible dielectric substrate;applying an alkaline modification to said dielectric substrate to form a polyamic acid (PAA) anchoring layer on a surface of said dielectric substrate;electrolessly plating a Ni—P seed layer on said PAA layer;forming a photoresist pattern on said Ni—P seed layer;plating copper traces within said photoresist pattern;plating a surface finishing layer on said copper traces; andremoving said photoresist pattern and etching away said Ni—P seed layer not covered by said copper traces to complete said flexible substrate.2. The method according to wherein said dielectric substrate comprises: any kind of polyimide (PI) claim 1 , including Kapton PI or Upisel PI claim 1 , or liquid crystal polymer (LCP).3. The method according to wherein said alkaline modification comprises applying a KOH/alkaline base chemical to said dielectric substrate wherein said PAA layer has a thickness of less than 100 nm and preferably less than 10 nm.4. The method according to further comprising depositing a catalyst layer comprising Palladium (Pd) or Nickel (Ni) on said PAA layer by immersion into an ionic metal solution to activate said PAA layer for subsequent electroless Ni—P seed layer plating.5. The method according to wherein said electrolessly plating said Ni—P seed ...

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Номер записи: 87
03-02-2022 дата публикации

Substrate processing system, controller for substrate processing system and operation method of substrate processing system

Номер: US20220033989A1
Автор: Hideki Wakabayashi, Kazuma Ideguchi, Shugo Midorikawa, Tensei SATO, Yosuke Nagasawa
Принадлежит: Ebara Corp

Provided is a technique configured to cause a first actual operation to be started in a short time when the actual operation of a substrate processing component group is performed a plurality of times. A substrate processing system 10 includes a substrate processing apparatus 11 having a substrate processing component group 20 and a controller 40. The substrate processing component group 20 is configured to perform a test operation and an actual operation. The substrate processing component group 20 has a first substrate processing component and a second substrate processing component. When the actual operation is performed a plurality of times, the controller 40 causes the first substrate processing component to perform the test operation and causes the actual operation of the first substrate processing component to be started after completion of the test operation of the first substrate processing component.

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Номер записи: 88
19-01-2017 дата публикации

STRUCTURE OF DUAL-COLOR ELECTROPLATED ARTICLE

Номер: US20170016133A1
Автор: CHANG WEN-TSAN
Принадлежит:

An improved structure of a dual-color electroplated article includes a base material, which has an outside surface, on which a metallic plating layer is electroplated to have the metallic plating layer tightly wrap around and enclose the outside surface and which includes at least one recess formed therein to be alternate with non-recessed portions of the outside surface and each receiving therein a black chrome plating layer electroplated therein to have the black chrome plating layer tightly attached in the recess; and a protection layer, which is formed, through electrophoretic deposition, to tightly wrap around and enclose the metallic plating layer and the black chrome plating layer of the base material. The metallic plating layer formed on the outside surface of the base material and the black chrome plating layer formed in the recess provide the base material with two different metallic colors and a dual-color article is provided. 1. A structure of a dual-color electroplated article , comprising:a base material, which has an outside surface, the outside surface comprising a metallic plating layer formed thereon through electroplating in such a way that the metallic plating layer tightly wraps around and encloses the outside surface, the outside surface comprising at least one recess formed therein to be alternate with non-recessed portions of the outside surface, each of the recesses receiving a black chrome plating layer formed therein in such a way that the black chrome plating layer is tightly attached in the recess; anda protection layer, which is formed, through electrophoretic deposition, to tightly wrap around and enclose the metallic plating layer and the black chrome plating layer of the base material.2. The structure of the dual-color electroplated article according to claim 1 , wherein the metallic plating layer is formed of one of bronze claim 1 , red brass claim 1 , and tin.3. The structure of the dual-color electroplated article according to ...

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Номер записи: 89
03-02-2022 дата публикации

METHOD FOR PRODUCING PLATED FORMED PRODUCT

Номер: US20220035246A1
Автор: ENDO Ayako, Ishii Akira, MATSUMOTO Tomoyuki, NISHIGUCHI Naoki
Принадлежит: JSR Corporation

A method for producing a plated formed product includes: a step (1) of forming on a substrate of the substrate having a metal film a resin film of a photosensitive resin composition containing a sulfur-containing compound having at least one selected from a mercapto group, a sulfide bond, and a polysulfide bond; a step (2) of exposing the resin film; a step (3) of developing the exposed resin film to form a resist pattern film; a step (4) of performing plasma treatment of a substrate having the resist pattern film on the metal film with oxygen-containing gas; and a step (5) of performing, after the plasma treatment, plating treatment with the resist pattern film as a mold. 1: A method for producing a plated formed product , the method comprising:a step (1) of forming on a substrate of the substrate having a metal film a resin film of a photosensitive resin composition containing a sulfur-containing compound having at least one selected from a mercapto group, a sulfide bond, and a polysulfide bond;a step (2) of exposing the resin film;a step (3) of developing the exposed resin film to form a resist pattern film;a step (4) of performing plasma treatment of a substrate having the resist pattern film on the metal film with oxygen-containing gas; anda step (5) of performing, after the plasma treatment, plating treatment with the resist pattern film as a mold.2: The method for producing a plated formed product according to claim 1 , wherein the photosensitive resin composition further contains polymer (A) having an acid dissociative group and photoacid generator (B).3: The method for producing a plated formed product according to claim 2 , wherein a content of the sulfur-containing compound is 0.2 to 2.0 parts by mass claim 2 , with respect to 100 parts by mass of a polymer component including polymer (A) having an acid dissociative group included in the photosensitive resin composition.4: The method for producing a plated formed product according to claim 1 , wherein the ...

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Номер записи: 90
18-01-2018 дата публикации

ECOLOGIC METHOD FOR THE CONTINUOUS CHROME PLATING OF BARS AND ASSOCIATED DEVICE

Номер: US20180016688A1
Автор: Angelini Giorgio
Принадлежит:

Method and plant for continuous chrome plating of metal bars, tubular elements and similar, wherein the bar to be chromed is made move forward fastly in a device of chrome plating without of tank of chrome plating including a plurality of anodic cells of chrome plating with tubular-torx shape, into which an electrolytic solution flows with high density of current, for forming on the bar a multi-layer chromium plating while the bar moves forward through the anodes-cells themselves, and wherein the device is characterized in feeding the electrolytic solution with a flow axially distributed and with a circulation of the electrolyte in a turbulent flow, controlled through the anode of chrome plating, said plant including furthermore many cooling stations of the bar by a jet of liquid with cryoscopic thermal step, the sealing of the bath is guaranteed by gaskets in plastic material which are reinforced by armonic steel springs. 127. Plant for the continuous chrome plating of metal bars () , tubular elements and similar , comprising:{'b': '30', 'a chamber of chrome plating () having an input and output aperture of said bars axially aligned in the direction of motion of the bars themselves;'}{'b': 24', '30, 'a roller () for making said bars move forward through said chamber of chrome plating ();'}{'b': 17', '17', '30, 'one or more tubular anodes () of chrome plating, preferably at least three, axially aligned with the path of the bars to be chromed, each of said anodes () presenting a plurality of surface holes, and arranged in said chamber of chrome plating ();'}{'b': '16', 'a sacrificial annular anode () with holes for axial nozzles;'}{'b': 28', '31', '37', '28', '17', '16, 'a pump (, ) for making a forced circulation and in an independent way an electrolytic solution (, ′) of chrome plating inside, respectively, of said anodes tubular () and of said sacrificial annular anode with axial nozzles (); and'}{'b': 29', '37', '28, 'a storage reservoir () containing said ...

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Номер записи: 91
18-01-2018 дата публикации

APPARATUS AND METHOD OF CONTACT ELECTROPLATING OF ISOLATED STRUCTURES

Номер: US20180016695A1
Автор: Kadija Igor V.
Принадлежит:

The presently disclosed apparatus and method offer the capability to electroplate pure metals or alloys onto substrates, having no current collectors or being connected to the power supply by a low conductivity seed layer. Thus, the disclosed system enables pure metal or alloy deposition on various substrates, including flexible electronic circuits, wafers for IC processing, and discrete electronic devices in surface finishing applications. 1. An apparatus for electroplating a metal onto a substrate comprising an isolated seed pattern or a substrate comprising a seed pattern connected to a resistance current collector with conductivity of less than 1e+5 ohm-cm , said apparatus comprising:a. a working electrode comprising fine metal mesh, metal fiber cloth, or metal web, wherein the working electrode is configured to directly contact the seed pattern of the substrate; i. fine metal mesh, metal fiber cloth, or metal web; or', 'ii. metal mesh; and, 'b. a counter electrode comprising either wherein current collectors link both electrodes to the respective polarity of a power supply, and', 'wherein the working electrode is free from electrically conductive bristles., 'c. a chemically inert porous material;'}2. The apparatus of claim 1 , wherein the working electrode and counter electrode are constructed from:(a) gold, silver, copper, nickel, palladium, platinum, titanium, stainless steel, cobalt, thallium, tantalum, rhodium, iridium, ruthenium, osmium or alloys of gold, alloys of silver, alloys of copper, tungsten, vanadium, alloys of nickel, alloys of palladium, alloys of platinum, platinized titanium, platinum clad niobium or tantalum, gold plated stainless steel, copper, nickel, or combinations thereof; or(b) chemically inert polymer textile material combined with one or more materials selected from (a).3. The apparatus of claim 1 , wherein the chemically inert porous material is selected from the group comprising porous polymer sponge claim 1 , pile cloth material ...

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Номер записи: 92
17-01-2019 дата публикации

ELECTROCHEMICAL THREE-DIMENSIONAL PRINTING AND SOLDERING

Номер: US20190017185A1
Автор: Rosa-Ortiz Sabrina Marie, Takshi Arash
Принадлежит: UNIVERSITY OF SOUTH FLORIDA

A hydrogen evolution assisted electroplating nozzle includes a nozzle tip configured to interface with a portion of a substructure. The nozzle also includes an inner coaxial tube connected to a reservoir containing an electrolyte and an anode, the inner coaxial tube configured to dispense the electrolyte through the nozzle tip onto the portion of the substructure. The nozzle also includes an outer coaxial tube encompassing the inner coaxial tube, the outer coaxial tube configured to extract the electrolyte from the portion of the substructure. The nozzle also includes at least one contact pin configured to make electrical contact with a conductive track on the substrate. 1. A hydrogen evolution assisted electroplating nozzle , the nozzle comprising:a nozzle tip configured to interface with a portion of a substructure;an inner coaxial tube connected to a reservoir containing an electrolyte and an anode, the inner coaxial tube configured to dispense the electrolyte through the nozzle tip onto the portion of the substructure; andan outer coaxial tube encompassing the inner coaxial tube, the outer coaxial tube configured to extract the electrolyte from the portion of the substructure;at least one contact pin configured to make electrical contact with a conductive track on the substrate.2. The nozzle of claim 1 , wherein the inner coaxial tube and the outer coaxial tube circulate the electrolyte at the nozzle tip to remove hydrogen bubbles forming at the portion of the sub structure.3. The nozzle of claim 1 , wherein the at least one contact pin is connected to the nozzle via a spring positioned within a tube guide.4. The nozzle of claim 1 , wherein the nozzle further comprises a sensing mechanism claim 1 , the sensing mechanism configured to detect a quality of an electroplated area formed via the nozzle.5. The nozzle of claim 4 , wherein the sensing mechanism is an ammeter configured to monitor a current along the conductive track.6. The nozzle of claim 5 , wherein the ...

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Номер записи: 93
17-01-2019 дата публикации

Electrochemical Fabrication Methods Incorporating Dielectric Materials and/or Using Dielectric Substrates

Номер: US20190017189A1
Автор: Cohen Adam L., Frodis Uri, Kim Kieun, Le Qui T., Lockard Michael S., McPherson Dale S., Smalley Dennis R., Zhang Gang
Принадлежит: Microfabrica Inc.

Some embodiments are directed to techniques for building single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while others use an intervening adhesion layer material. Some embodiments use different seed layer and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while others apply the materials in blanket fashion. Some embodiments remove extraneous material via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer. 1: A batch process for forming a plurality of multilayer three-dimensional structures , comprising:(a) forming on and adhering a first layer of material at least indirectly to a substrate containing at least one region of dielectric material, wherein the first layer of material comprises at least one first structural material and at least one first sacrificial material that are planarized to set a boundary level for the first layer of material;(b) forming and adhering at least one additional layer of material on and at least indirectly to a previously formed layer of material, to build up the plurality of three-dimensional structures from a plurality of adhered layers, wherein each of the at least one additional layers comprises at least one additional structural material and at least one additional sacrificial material that are planarized to set a boundary level for each, respective, additional layer of ...

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Номер записи: 94
21-01-2021 дата публикации

ELECTROCHEMICAL DEPOSITION SYSTEMS

Номер: US20210017661A1
Автор: GUARNACCIA Dave, HANDER Jon, Keigler Arthur, MOON Robert, PAPAPANAIYATOU Demetrius
Принадлежит:

An electrochemical deposition system for depositing metal onto a workpiece, comprises a deposition chamber adapted to receive plating solution, a workpiece holder for holding a workpiece in a first plane, a shield holder for holding a shield in a second plane substantially parallel to the first plane, an agitation plate having a profiled surface to agitate plating solution, wherein the workpiece holder, shield holder and agitation plate are all adapted for insertion into and removal from the deposition chamber, and further comprising an actuator operable to change a relative distance between the workpiece holder and shield holder, in a direction normal to the first and second planes, while they are located within the deposition chamber. 1. An electrochemical deposition system for depositing metal onto a workpiece , comprising:a deposition chamber adapted to receive plating solution in use,a workpiece holder for holding a workpiece in a first plane,a shield holder for holding a shield in a second plane substantially parallel to the first plane,an agitation plate having a profiled surface to agitate plating solution in use,wherein the workpiece holder, shield holder and agitation plate are all adapted for insertion into and removal from the deposition chamber, andwherein the electrochemical deposition system further comprises an actuator operable to change a relative distance between the workpiece holder and shield holder, in a direction normal to the first and second planes, while they are located within the deposition chamber.2. The system of claim 1 , wherein the agitation plate and shield holder are assembled together as a cartridge claim 1 , for insertion into and removal from the deposition chamber.3. The system of claim 2 , wherein the agitation plate is mounted on the shield holder.4. The system of claim 3 , wherein the agitation plate is movably mounted on the shield holder claim 3 , to permit relative motion therebetween claim 3 , in a direction parallel to ...

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Номер записи: 95
21-01-2021 дата публикации

SUBSTRATE LOCKING SYSTEM, DEVICE AND PROCEDURE FOR CHEMICAL AND/OR ELECTROLYTIC SURFACE TREATMENT

Номер: US20210017662A1
Автор: GLEISSNER Andreas, Ötzlinger Herbert, WIRNSBERGER THOMAS
Принадлежит:

Exemplary substrate locking system, device, apparatus and method for chemical and/or electrolytic surface treatment of a substrate in a process fluid can be provided. For example, it is possible to provide a first element, a second element and a locking unit. The first element and the second element can be configured to hold the substrate between each other. The locking unit can be configured to lock the first element and the second element with each other. The locking unit can comprise a magnet control device and a magnet. The magnet can be arranged at or near the first element and/or the second element. The magnet control device can be configured to control a magnetic force between the first element and the second element. 119-. (canceled)20. A substrate locking method for at least one of a chemical surface treatment or an electrolytic surface treatment of a substrate in a process fluid , comprising:arranging a substrate between a first element and a second element, andlocking the first element and the second element with each other using a locking arrangement which comprises a magnet control device and a plurality of magnets distributed at or near the first element along the substrate, wherein the magnet control device is configured to control a magnetic force between the first element and the second element.21. The substrate locking method according to claim 20 , wherein the locking arrangement comprises at least one further magnet that is arranged at or near the second element claim 20 ,22. The substrate locking method according to claim 20 , wherein the first element is a first contact ring claim 20 , and the second element is a second contact ring claim 20 , and wherein the first and second contact rings are configured to hold at least one substrate between each other.23. The substrate locking method according to claim 20 , wherein the first element is a substrate holder claim 20 , and the second element is a contact loop claim 20 , and wherein the substrate ...

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Номер записи: 96
18-01-2018 дата публикации

METHOD FOR PROCESSING A WAFER, AND LAYER STACK

Номер: US20180019127A1
Автор: Santos Rodriguez Francisco Javier
Принадлежит:

In various embodiments, a method for processing a wafer is provided. The method includes forming a layer stack, including a support layer and a useful layer and a sacrificial region between them, said sacrificial region having, vis-à-vis a processing fluid, a lower mechanical and/or chemical resistance than the support layer and than the useful layer. The support layer has a depression, which exposes the sacrificial region. The method further includes forming at least one channel in the exposed sacrificial region by means of the processing fluid. The channel connects the depression to an exterior of the layer stack. 1. A method for processing a wafer , the method comprising:forming a layer stack, comprising a support layer and a useful layer and a sacrificial region between them, said sacrificial region having, vis-à-vis a processing fluid, at least one of a lower mechanical or chemical resistance than the support layer and than the useful layer;wherein the support layer has a depression, which exposes the sacrificial region;forming at least one channel in the exposed sacrificial region by means of the processing fluid, wherein the channel connects the depression to an exterior of the layer stack.2. The method of claim 1 ,wherein the useful layer comprises at least one electrical circuit element.3. The method of claim 1 ,wherein the depression is formed through the support layer or at least into the latter by virtue of material being removed from the support layer or by virtue of material being deposited by means of a mask.4. The method of claim 1 ,wherein the support layer comprises the wafer; orwherein the useful layer is arranged between the support layer and the wafer.5. The method of claim 1 ,wherein at least one of the useful layer and the support layer or the useful layer and the sacrificial region have an epitaxial relation to one another.6. The method of claim 1 ,wherein the useful layer is grown epitaxially onto the support layer and the sacrificial region ...

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Номер записи: 97
22-01-2015 дата публикации

PATTERN TRANSFER MOLD AND PATTERN FORMATION METHOD

Номер: US20150021191A1
Автор: Inanami Ryoichi, KOKUBUN Koichi, Li Yongfang, Mimotogi Akiko, Saito Masato, Sato Takashi
Принадлежит:

According to one embodiment, a pattern transfer mold includes a base body, first and second stacked bodies, first and second electrodes. The base body includes a base unit including a first surface, a first protrusion provided on the first surface and having a first side surface, and a second protrusion provided on the first surface, separated from the first protrusion, and having a second side surface opposing the first side surface. The first stacked body is provided on the first side surface, and includes first conductive layers and a first insulating layer. The second stacked body is provided on the second side surface, separated from the first stacked body, and includes second conductive layers and a second insulating layer. The first electrode is electrically connected to at least one of the first conductive layers. The second electrode is electrically connected to at least one of the second conductive layers. 1. A pattern transfer mold , comprising: a base unit including a first surface,', 'a first protrusion provided on the first surface, the first protrusion having a first side surface intersecting the first surface, and', 'a second protrusion provided on the first surface and separated from the first protrusion in a first direction parallel to the first surface, the second protrusion having a second side surface intersecting the first surface and opposing the first side surface in the first direction;, 'a base body including'}a first stacked body provided on the first side surface between the first protrusion and the second protrusion, the first stacked body including a plurality of first conductive layers and a first insulating layer, the first conductive layers being arranged in the first direction, the first insulating layer being provided between the first conductive layers;a second stacked body provided on the second side surface between the first protrusion and the second protrusion and separated from the first stacked body, the second stacked body ...

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Номер записи: 98
19-01-2017 дата публикации

Cover for electronic device, antenna assembly, electronic device, and method for manfuacturing the same

Номер: US20170019510A1
Автор: Dae Seong Jeon, Jong Lae Kim, Kang Ryong CHOI
Принадлежит: Samsung Electro Mechanics Co Ltd

A cover for an electronic device may include a metal plate having a first metal region formed of a metal; a through-hole formed in a portion of the first metal region of the metal plate; and an electrical open path extending from the through-hole to an end portion on one side of the first metal region through metal oxidation.

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Номер записи: 99
19-01-2017 дата публикации

PRINTED CIRCUIT BOARD AND METHOD OF FABRICATING THE SAME

Номер: US20170019992A1
Автор: Bae Yun Mi, Choi Dae Young, HWANG Jung Ho, Jeong Dong Hun, Jeong In Ho, Kim Sang Hwa, Kwon Soon Gyu, Lee Han Su, Lee Jin Hak, LEE Sang Young
Принадлежит:

A printed circuit board includes an insulating layer, a circuit pattern on the insulating layer, and a surface treatment layer on the circuit pattern. The surface treatment layer includes a bottom surface having a width wider than a width of a top surface of the circuit pattern. 1. A printed circuit board comprising:an insulating layer;a circuit pattern on the insulating layer; anda surface treatment layer on the circuit pattern,wherein the surface treatment layer includes a bottom surface having a width wider than a width of a top surface of the circuit pattern.2. The printed circuit board of claim 1 , wherein claim 1 , in the circuit pattern claim 1 , at least one of an upper right lateral side and an upper left lateral side thereof has a predetermined curvature.3. The printed circuit board of claim 1 , wherein the width of the top surface of the circuit pattern is narrower than a width of a bottom surface of the circuit pattern claim 1 , andthe bottom surface of the circuit pattern comprises a first area vertically overlapped with the top surface of the circuit pattern and a second area except for the first area.4. The printed circuit board of claim 3 , wherein the surface treatment layer comprises a contact area making contact with the top surface of the circuit pattern and a non-contact area that does not make contact with the top surface of the circuit pattern claim 3 ,the second area of the circuit pattern comprises a third area that is not vertically overlapped with the non-contact area of the surface treatment layer and a fourth area vertically overlapped with the non-contact area of the surface treatment layer, andthe third area has a width wider than a width of the fourth area.5. The printed circuit board of claim 4 , wherein the width of the third area to the width of the fourth area satisfies a range of 1.5 to 4.0.6. The printed circuit board of claim 1 , wherein the surface treatment layer comprises a gold (Au) surface treatment layer including a ...

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Номер записи: 100