Способ управления магнитоупругой связью с помощью когерентного оптического лазерного излучения в эпитаксиальных плёнках феррит-граната

Изобретение относится к области сенсорики и сверхвысокочастотной (СВЧ) техники, в частности к созданию управляемых сенсоров магнитных полей, фильтров, модуляторов и маршрутизаторов СВЧ-излучения, оптически управляемых логических элементов, преобразователей сигналов, рабочим материалом которых являются эпитаксиальные пленки феррит-гранатов с перестраиваемыми свойствами за счет управления магнитоупругой связью в монокристалле с помощью когерентного оптического (лазерного) излучения. Способ управления магнитоупругой связью в монокристаллических магнитных эпитаксиальных пленках катион-замещенных феррит-гранатов 1 включает установку образца пленки феррит-граната 1 в измерительную ячейку 2, помещенную во внешнее переменное магнитное поле В, характеризующееся частотами СВЧ-излучения, при приложении внешнего постоянного магнитного поля В0, при этом измерительная ячейка 2 подключена к векторному анализатору цепей 3 для взаимодействия СВЧ-излучения со спиновой системой магнитной пленки для возбуждения ...

Solution of silicon in a metal, coating process and silicon thin film obtainable in accordance with the process

A method is described for coating a material surface with a silicon thin film, silicon being dissolved in a metallic solution and the dissolved silicon then being precipitated from the solution in a temperature range in which a silicon layer is formed on the metal surface. The solvent is a mixture of gold and a metal or metals which either have a melting point which is below the deposition temperature range or which, together with gold, form a eutectic which has a eutectic temperature which is below the deposition temperature range.

Verfahren zur Herstellung eines optischen einkristallinen Films

MAGNETIC DEVICES

... 1373119 Magnetic storage arrangements WESTERN ELECTRIC CO Inc 16 Nov 1971 [16 Nov 1970 12 April 1971 29 Oct 1971] 53125/71 Heading H3B [Also in Division B1] A garnet substrate on which a garnet layer is grown by liquid phase epitaxial deposition (see Division B1) is used in magnetic devices in particular in "bubble" devices for switching, memory and logic functions. Such devices are shown in Figs. 1 and 2. Fig. 1 shows an arrangement 10 including a sheet or slice 11 of material in which single wall domains can be moved by bar and T-shaped segments and the reorienting in-plane field rotates clockwise in the plane of sheet 11 as viewed. The reorienting field is represented by block 12 and may comprise mutually orthogonal coil pairs (not shown) driven in quadrature. Only closed "information" loops are shown. The movement of domain patterns simultaneously in all the registers represented by loops is synchronized by the in-plane field source 12. Each rotation of the inplane field advances a ...

GROWING EPITAXIAL LAYERS

... 1386856 Epitaxial growth on a substrate WESTERN ELECTRIC CO INC 11 April 1972 [12 April 1971 16 July 1971] 16611/72 Heading B1S An epitaxial layer is grown on a substrate by contacting the latter with a liquid nutrientflux solution so that growth occurs on contact and wherein prior to contact the nutrient-flux solution is super-saturated and formed by cooling the solution to an initial nucleation temperature which is less than 950‹C and is at least 10‹C below the saturation temperature of the solution which remains in the liquid state. The lattice parameters between the epitaxial layer and the substrate may differ by not more than 1.0%. The specification includes an extensive list of substrates, nutrients and fluxes. The substrates and nutrients may be selected from garnets, spinels ferrites, orthoferrites, corundum, yttrium, rare earth orthoaluminates or lead niobate. The nutrient flux is preferably a boron oxide-, lead oxide mixture or a bismuth oxide-vanadium oxide mixture. Nutrient-flux ...

METHOD OF MANUFACTURING A MONOCRYSTALLINE SUBSTRATE BODY

... 1432686 Depositing epitaxial layers PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 11 July 1973 [14 July 1972] 33026/73 Heading B1S A monocrystalline body consisting of a substrate with an epitaxial layer deposited thereon is made by dissolving a surface layer of a monocrystalline substrate material in a melt which consists of a solution of the components of the substrate material dissolved in a flux and then depositing a monocrystalline layer of the substrate material on the resulting surface from a melt which consists of a solution of the components of the substrate material dissolved in a flux. The dissolution of the surface layer and subsequent depository of the layer may be carried out in the same melt. In example I, a plate of gadolinium gallium garnet was treated with a melt of Gd 2 O 3 , Ga 2 O 3 , PbO, and B 2 O 3 at a temperature above the saturation temperature of the melt, the plate removed from the melt and the thinner plate provided with a layer of the composition by liquid ...

Epitaxial strengthening of crystals

An epitaxial layer is used to place the surface of a crystal in compression so as to greatly increase the durability of the crystal such as a laser medium crystal. The layer may be applied by LPE or by VPE molecular beam epitaxy being specified. Increasing the strength of the crystals in this way allows them to operate with higher laser power output.

METHOD OF PREPARATION OF SINGLE-CRYSTAL FILMS

... 1384745 Single crystal thin film COMMISSARIAT A L'ENERGIE ATOMIQUE 18 May 1972 [25 May 1971] 23472/72 Heading C1A A single crystal thin film is prepared by placing a single crystal substrate in a deposition zone of an aqueous solution containing compounds which undergo a double decomposition reaction to form in situ the composition of the single crystal film the compounds being added to a high temperature dissolution zone of the solution where they dissolve and decompose to form the composition of the single crystal thin film which is transported to the deposition zone where it crystallizes on to the substrate. The thin film may be a synthetic double oxide having a garnet structure and a formula T 3 M 5 O 12 where T represents yttrium or a rare earth element or atomic number 62 to 71 and M represents Fe, Al, Ga or a transition element of atomic number 21 to 28 and may be prepared from an aqueous solution of a mixed oxide of a metal and of an alkali metal and a hydroxide or a salt of rare ...

MAGNETIC STRUCTURES

SINGLE MODE OPTICAL WAVEGUIDE

MAGNETO-OPTIC BI.SUB.1 LU.SUB.2 FE.SUB.5 O IN12 XX CRYSTALS

MAGNETO-OPTIC Bi1 Lu2 Fe5O12 CRYSTALS A mixture and method are disclosed for growing bismuth lutetium iron garnet crystals via liquid phase epitaxy on a gadolinium gallium garnet (GGG) substrate wherein the crystals exhibit a relatively high Faraday rotation and an improved optical absorption.

Halbleitervorrichtung und Verfahren zu deren Herstellung

Verfahren zur Herstellung einer Halbleitervorrichtung auf aus Einkristallen bestehenden Substraten

Halbleitervorrichtung

Single crystal on the basis of gallium garnet

SINGLE CRYSTAL FROM NON MAGNETIC SYNTHETIC GARNET MATERIAL, AS WELL AS ITS USE AS SUBSTRATE TO ZUECHTUNG THE BLISTER DOMAIN LAYER.

Method of depositing epitaxial layers of PbTe, PbSnTe, ZnTe, CdTe and CdHgTe from a molten solution in Me(2)Te(3) (Me=As,Sb)

Thin epitaxial layers of PbTe, PbSnTe, ZnTe, CdTe and CdHgTe can be deposited by liquid-phase epitaxy from a molten solution of these substances in As2Te3, Sb2Te3 or their mixtures. The physical properties of deposited layers may be varied by small additions of other substances, by changing the stoichiometric composition of dissolved compounds and by means of the deposition temperature. The method can easily be carried out technologically and results in layers of high crystal perfection which are suitable for technical applications.

Process for preparing thin films of potassium niobate, potassium tantalate, and mixed crystals thereof

Epitaxial layers of KNbO3, KTaO3 or mixed crystals thereof can be deposited on suitable substrates from a melt solution of these substances in potassium metavanadate. The physical properties of the thin films can in the process be largely influenced by the choice of the chemical composition of the solution and the deposition temperature. The relatively simple technology of liquid-phase epitaxy of these substances in particular provides for the preparation of wave-guiding thin films for the active components of integrated optics.

Apparatus for producing nitride single crystal

Disclosed is an apparatus for growing a nitride single crystal by using a flux (7) containing an easily oxidizable substance. The apparatus comprises a crucible (1) for containing the flux (7), a pressure vessel (20) for housing the crucible (1) and being filled with an atmosphere containing at least a nitrogen gas, furnace members (15A, 15B) arranged outside the crucible (1) in the pressure vessel (20), heaters (17, 18) fixed to the furnace members, and an alkali-resistant, heat-resistant metal layers (16A, 16B) covering the furnace members.

PROCESS IMPROVES PRODUCTION Of a MAGNETIC FILM ON a GARNET SUBSTRATE

Manufactoring process of devices semiconductors on substrates monocristrats flaxes

MAGNETIC STRUCTURE FOR DISPLACEMENT OF MAGNETIC BUBBLES HAS SINGLE WALL, AND OPERATIVE DEVICE BY MAGNETIC BUBBLES

METHOD OF PREPARATION BY GROWTH BY EPITAXY IN LIQUID PHASE OF SINGLE-CRYSTAL LAYERS Of MAGNESIUM AND LANTHANUM ALUMINATE (LMA) AND COMPONENT OPTICS INCLUDING/UNDERSTANDING THESE LAYERS

Process for the realization of a thin film in synthetic garnet monocrystal like films in conformity with those thus obtained

PROCEDE DE FABRICATION D'UNE COUCHE DIELECTRIQUE

... a. Procédé de fabrication d'une couche diélectrique b. Procédé caractérisé en ce que le pseudisystème à trois composants étant choisi de façon que dans un diagramme ternaire Bi2 O3 , Ge O2 et (Y + xGa2 O3 ), le rapport Bi2 O3 /Ge O2 /(Y + xGa2 O3 ) en rapport molaire est entouré par une plage reliant trois points A, B, C, le point A ayant des coordonnées 0,760/0,002/0,238, le point B ayant comme coordonnées 0,004/0,002/0,004, et le point C ayant comme coordonnées 0,760/0,004 et x satisfaisant à la condition 0,05 < x < 5,0 ...

반도체 소자용 에피택셜 기판, 반도체 소자, 및 반도체 소자용 에피택셜 기판의 제조 방법

... 전류 콜랩스의 발생이 억제되어 이루어지는 반도체 소자용의 에피택셜 기판을 제공한다. 반도체 소자용 에피택셜 기판이, Zn이 도핑된 GaN으로 이루어지는 반절연성의 자립 기판과, 상기 자립 기판에 인접하여 이루어지는 버퍼층과, 상기 버퍼층에 인접하여 이루어지는 채널층과, 상기 채널층을 사이에 두고서 상기 버퍼층과는 반대쪽에 마련되어 이루어지는 장벽층을 포함하고, 상기 버퍼층이 AlpGa1-pN(0.7≤p≤1)으로 이루어지고, 상기 자립 기판에서 상기 채널층으로의 Zn의 확산을 억제하는 확산 억제층이도록 했다.

METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL

An AlN single crystal is grown by applying a pressure to a melt containing at least gallium, aluminum and sodium in a nitrogen-containing atmosphere. Preferably, an AlN single crystal is grown under a nitrogen partial pressure of not more than 50 atom at a temperature of not less than 850°C but not more than 1200°C. © KIPO & WIPO 2007 ...

SINGLE CRYSTAL GROWING METHOD

A single crystal is grown by melting a material in a container (1) under a nitrogen containing non oxidative atmosphere. The single crystal is grown by swinging the container (1), in a status where an agitating medium (12) composed of a solid material made of a mixed melt (10) and a nonreactive material is brought into contact with the mixed melt (10).

SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LAMINATE CONTAINING SAME

This semiconductor light-emitting element is provided with: a group 13 element nitride film (3) grown on a seed crystal substrate in a nitrogen-containing atmosphere from a melt containing a flux and a group 13 element by a flux method; an n-type semiconductor layer (21) disposed on the group 13 element nitride film (3); a light-emitting region (23) disposed on the n-type semiconductor layer; and a p-type semiconductor layer (25) which is disposed on the light-emitting region. The semiconductor light-emitting element contains: an inclusion-distributed layer (3a), in which an inclusion derived from the components of the melt is distributed, disposed in a region that is 50 μm or less from an interface (11a) on the seed crystal semiconductor side of the group 13 element nitride film (3); and an inclusion-deficient layer (2b), which is deficient in inclusion, disposed on the inclusion-distributed layer.

Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphere

The present invention suppresses anomalous growth of a Group III nitride semiconductor at the periphery of a seed substrate. The invention is directed to a method for producing a Group III nitride semiconductor including feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate. The oxygen concentration of the furnace internal atmosphere is elevated after the growth initiation temperature of the Group III nitride semiconductor has been achieved. In a period from the initiation of the growth to a certain timing, the oxygen concentration of the furnace internal atmosphere is controlled to 0.02 ppm or less, and thereafter, to greater than 0.02 ppm and 0.1 ppm or less.

Liquid phase epitaxial growth of high temperature superconducting oxide wafer

This invention provides a method of manufacturing of a superconducting oxide wafer in which a plural system oxide superconducting single crystal thin film is grown by the liquid epitaxy process using the flux on a crystal substrate.

METHOD AND APPARATUS FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL

A method is for manufacturing a group 13 nitride crystal by a flux method. The method includes: placing a seed crystal and a mixed melt that contains an alkali metal or an alkali-earth metal and a group 13 element in a reaction vessel; and rotating the reaction vessel to stir the mixed melt. The reaction vessel includes a structure to stir the mixed melt. More than one seed crystals are installed point-symmetrically with respect to a central axis of the reaction vessel at positions other than the central axis such that a c plane of each of the seed crystals is substantially parallel to a bottom of the reaction vessel. The structure is installed point-symmetrically with respect to the central axis at at least part of the reaction vessel other than the central axis.

Preparation method and application of sodium barium fluoroborate birefringent crystal

A preparation method and application of a Na3Ba2(B3O6)2F birefringent crystal, the crystal having a chemical formula of Na3Ba2(B3O6)2F, and belonging to a hexagonal crystal system, the space group being P63/m, and the lattice parameters comprising a=7.3490(6) Å, c=12.6340(2) Å, V=590.93(12) Å3, Z=2; the crystal is used for an infrared/deep ultraviolet waveband, and is an uniaxial negative crystal, ne Подробнее

Method for manufacturing group 13 nitride crystal and group 13 nitride crystal

In a method for manufacturing a group 13 nitride crystal, a seed crystal made of a group 13 nitride crystal is arranged in a mixed melt containing an alkali metal and a group 13 element, and nitrogen is supplied to the mixed melt to grow the group 13 nitride crystal on a principal plane of the seed crystal. The seed crystal is manufactured by vapor phase epitaxy. At least a part of contact members coming into contact with the mixed melt in a reaction vessel accommodating the mixed melt is made of Al2O3. An interface layer having a photoluminescence emission peak whose wavelength is longer than the wavelength of a photoluminescence emission peak of the grown group 13 nitride crystal is formed between the seed crystal and the grown group nitride crystal.

Faraday rotator for optical isolator

Magnetic garnet film and manufacturing method therefor

УСТРОЙСТВО ДЛЯ ПОЛУЧЕНИЯ МОНОКРИСТАЛЛИЧЕСКИХ ОКСИДНЫХ ПЛЕНОК ПУТЕМ ЖИДКОФАЗНОЙ ЭПИТАКСИИ

Устройство для получения монокристаллических оксидных пленок путем жидкофазной эпитаксии включает изолирующую центральную трубу со средством внешнего высокочастотного индукционного нагрева, электропроводящий цилиндрический элемент конструкции с отверстиями на обоих концах, расположенный в центральной трубе, а также тигель, изготовленный из электропроводящего материала и коаксиально расположенный в цилиндрическом элементе конструкции.

Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls

Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls auf einem Einkristallsubstrat umfassend die Schritte des Heizens von Silizium in einem Graphittiegel, um eine Schmelze zu bilden, des Inkontaktbringens eines Siliziumcarbideinkristallsubstrats mit der Schmelze, und des Abscheidens und Aufwachsens eines Siliziumcarbideinkristalls aus der Schmelze, wobei die Schmelze 30 bis 70 Atom% Chrom basierend auf der Gesamtatommenge der Schmelze und 1 bis 25 Atom% X basierend auf der Gesamtatommenge der Schmelze, wobei X mindestens eines ausgewählt ist aus der Gruppe bestehend aus Nickel und Kobalt, und Kohlenstoff umfasst.

DÜNNFILMEINZELKRISTALL AUS LITHIUMNIOBAT UND VERFAHREN ZU SEINER HERSTELLUNG

Single mode optical waveguides

Magnetic structure suitable for the propagation of single-walled magnetic domains

A magnetic structure in which magnetic domains can propagate. The structure comprises a monocrystalline gallium garnet substrate having a surface which is substantially parallel to a (100) crystal plane and on which a layer of rare-earth iron garnet, having a partial substitution of maganese ions in iron sites, is grown in compression. By using a substrate material having a lattice constant between 12.23 and 12.38 ANGSTROM , the compression of a epilayer having certain desired magnetic properties can be adjusted by adjusting the incorporation of lutetium and yttrium ions in the epilayer, without adversely affecting magnetic properties of the layer.

Epitaxial growth of garnet films

The described invention relates to the growing of garnet films. The specification describes the growing of a garnet film by the liquid phase epitaxy process in which in order to reduce strain during she growth of a plurality of substrates the substrates are separated during the epitaxy process by means of a powder material including lead oxide which is applied prior to the epitaxy process. The material acts to separate the substrates in order to reduce strain but the separation is insufficient to allow the melt in which the films are grown to seep between the substrates. The invention is particularly applicable to the growing of garnet films for the production of magnetic bubble devices.

PROCEDURE FOR THE PRODUCTION A UVLICHTEMITTIERENDEN OF A HEXAGONAL ONE OF BORON NITRIDE CRYSTAL

PROCEDURE FOR THE PRODUCTION OF A GAN CRYSTAL AND DEVICE FOR THE PRODUCTION OF A GANKRISTALL

GROWTH OF SUPERCONDUCTOR MATERIAL FROM A FLUSSMITTEL-SCHMELZE, AS WELL AS MANUFACTURING ARTICLE.

GROWTH OF SUPERCONDUCTOR MATERIAL IN A FLUXED MELT, AND ARTICLE OF MANUFACTURE

METHOD OF MANUFACTURING A MONOCRYSTALLINE SUBSTRATE BODY

FREESTANDING III-NITRIDE SINGLE-CRYSTAL SUBSTRATE AND METHODOF MANUFACTURING SEMICONDUCTOR DEVICE UTILIZING THE SUBSTRATE

Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5 x 10 5 cm-2 and that are fracture resistant, and a method of manufacturing semiconductor devices utilizing suc h freestanding III-nitride single-crystal substrates are made available. The freestanding III-nitride single-crystal substrate includes one or more high-dislocation-density regions (20h), and a plurality of low-dislocation-density regions (20k) in which the dislocation density is lower than that of the high-dislocation-density regions (20h), wherein the average dislocation density is not greater than 5 x 10 5 cm-2. Herein, the ratio of the dislocation density of the high-dislocation-density region(s) (20h) to the average dislocation density is sufficiently large to check the propagation of cracks in the substrate. And the semiconductor device manufacturing method utilizes the freestanding III-nitride single crystal substrate (20p).

MAKING SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL USING A FREE-STANDING INTERPOSER SHEET

An interposer sheet can be used for making semiconductor bodies, such as of silicon, such as for solar cell use. It is free-standing, very thin, flexible, porous and able to withstand the chemical and thermal environment of molten semiconductor without degradation. It is typically of a ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. It is provided between a forming surface of a mold sheet, and the molten material from which a semiconductor body will be formed. It may be secured to the forming surface or deposited upon the melt. The interposer sheet suppresses grain nucleation, and limits heat flow from the melt. It promotes separation of the semiconductor body from the forming surface. It can be fabricated before its use. Because free-standing and not adhered to the forming surface, problems of mismatch of CTE are minimized. The interposer sheet and semiconductor body are ...

Used for making the article 13 group nitride crystal method and apparatus

Nitride crystal and method for producing the same

Procédé pour former sur un substrat une couche monocristalline en oxyde à structure de spinelle ou de grenat.

LA FORMATION EPITAXIALE DE COUCHES MONOCRISTALLINES EN OXYDE A STRUCTURE DE GRENAT OU DE SPINELLE A PARTIR D'UN BAIN DE FUSION SURFONDU CONTENANT UN SOLVANT A BASE DE PLOMB PERMET L'OBTENTION DE COUCHES TRES HOMOGENES ET LISSES SI LA FORMATION A LIEU SUR DES CRISTAUX-SUBSTRATS DONT LA FACE DE DEPOT ET UNE FACE NATURELLE DU CRISTAL FORMENT UN ANGLE COMPRIS ENTRE 0,3 ET 10. LA VITESSE DE CROISSANCE F PEUT ETRE PLUS FACILEMENT AJUSTEE EN UTILISANT UN SUBSTRAT DESORIENTE (COURBE A) QUE DANS LE CAS D'UN SUBSTRAT ORIENTE PARALLELEMENT A UNE FACE NATURELLE (COURBEB).

Junction with silicon carbide usable like source of light, and proceeded for its establishment

ORMEE PAR VOIE D'EPITAXIE

Grenat monocristallin non magnétique, à savoir le grenat de calcium-gallium-germanium. A l'aide du procédé de Czochralski, on peut former par croissance des monocristaux de grenat de calcium-gallium-germanium en présence de températures beaucoup plus faibles que dans le cas d'emploi de grenats habituels, de terre rare - gallium. Les monocristaux conformes à l'invention conviennent très bien pour former sur ceux-ci, par voie d'épitaxie, des couches à bulles magnétiques, en particulier des couches dont la composition répond à la formule générale Lu3 Fe5 O12 . Application : aux appareils d'enregistrement et/ou de reproduction.

PROCESS FOR THE GROWTH OF SINGLE-CRYSTAL EPITAXIAL LAYERS OUT OF RARE EARTH AND IRON GARNET

A semiconductor device and method of manufacturing the same

MAGNETIC BUBBLE DEVICES AND GARNET FILMS THEREFOR

PROCESS FOR THE GROWTH OF SINGLE-CRYSTAL EPITAXIAL LAYERS OUT OF RARE EARTH AND IRON GARNET

HEAT TREATMENT OF SMALL PLATES UTILISEES LIKE SUBSTRATE

RESONATOR HAS DISC PRESENTING a EPITAXIAL LAYER OF GARNET AND DEVICE HAS MICROWAVES PROVIDED With SUCH a RESONATOR HAS DISC

MONOCRYSTAL ON THE BASIS OF GALLIUM GARNET

Microwave device production involves cutting a garnet single crystal substrate into chips and growing a magnetic garnet single crystal film on each chip by liquid-phase epitaxial growth

Un procédé de fabrication d'un dispositif micro-ondes qui utilise un film monocristallin en grenat magnétique met en jeu la découpe d'un substrat monocristallin en grenat selon des puces (12). Ensuite, un film monocristallin en grenat magnétique est obtenu par croissance sur la surface de chacune des puces de substrat monocristallin en grenat (12) au moyen du procédé de croissance épitaxiale de cristal en phase liquide (15, 16, 17). Ce procédé est avantageux en ce sens qu'aucune fissuration du substrat monocristallin ne se produit pendant la croissance du film monocristallin en grenat magnétique, une formation d'éclat ou un ébréchage ne se produit pas et une faible variation de l'épaisseur du film entre des substrats est réalisée.

Magnetostatic wave device, has substrate with monocrystalline film provided on substrate having two layers with magnetizations of different saturation

Pour réaliser un dispositif à onde magnétostatique qui peut fonctionner simultanément dans plusieurs bandes de fréquence avec application d'un champ magnétique externe constant, on a fabriqué un dispositif qui comprend une pellicule monocristalline de grenat magnétique composée d'au moins deux couches ayant des aimantations à saturation différentes de préférence, l'épaisseur d'une première couche (3) entrant dans la constitution de la pellicule monocristalline de grenat magnétique est plus mince que l'autre couche (2), laquelle est celle qui est la plus proche du substrat (1).

A METHOD OF PRODUCING CRYSTALS OF NITRIDES OF GROUP 13 ELEMENTS AND MELT COMPOSITIONS

Epitaxial substrate for semiconductor elements, semiconductor element, and production method for epitaxial substrates for semiconductor elements

Provided is an epitaxial substrate for semiconductor elements, having suppressed occurrence of current collapse. The epitaxial substrate for semiconductor elements comprises: a semi-insulating independent substrate comprising GaN doped with Zn; a buffer layer adjacent to the independent substrate; a channel layer adjacent to the buffer layer; and a barrier layer provided on the opposite side to the buffer layer, sandwiching the channel layer therebetween. The epitaxial substrate is configured such that the buffer layer comprises AlpGa1-pN (0.7 ≤ p ≤ 1) and is a diffusion-suppressing layer that suppresses diffusion of Zn from the independent substrate to the channel layer.

GROUP III NITRIDE CRYSTAL, METHOD FOR GROWING THE GROUP III NITRIDE CRYSTAL, AND APPARATUS FOR GROWING CRYSTAL

When group III nitride crystals are grown under a pressurized atmosphere of a nitrogen-containing gas from a melt (50) containing at least a group III element, nitrogen, an alkali metal or an alkaline earth metal, a melt holding vessel (160) that holds the melt (50) is shaken around two axes different from each other in direction, for example, an X-axis and a Y-axis. According to the above constitution, the melt (50) can be stirred so as to flow at a sufficient flow rate over the whole interface of the melt (50) and the bottom surface of the vessel (or seed crystals). Thus, crystals having few macro-defects within the crystals can be grown. In addition, uniform flow of the melt (50) can be formed in the whole melt holding vessel (160). This also can reduce macro-defects, and crystals having no significant uneven thickness and having excellent in-plane evenness can be grown.

PROCESS FOR PRODUCING GROUP III ELMENT NITRIDE CRYSTAL, AND GROUP III ELEMENT NITRIDE CRYSTAL

This invention provides a process for producing a group III element nitride crystal, which can realize a high crystal growth rate and can produce a high-quality crystal, and a group III element nitride crystal. In the production process, a group III element, an alkali metal, and a seed crystal of a group III element nitride are placed in a crystal growth vessel. The crystal growth vessel is pressurized and heated under a nitrogen-containing gas atmosphere to allow the group III element and nitrogen to react in a melt containing the group III element, the alkali metal, and nitrogen and thus to grow a group III element nitride crystal using the seed crystal as a nucleus. Before the crystal growth vessel is pressurized and heated, a hydrocarbon having a higher boiling point than the alkali metal is added.

Cathode ray tube with single crystal target

Light output of single crystal phosphors used on cathode ray tubes can be vastly improved by use of a microfaceted surface structure conveniently produced by use of a single crystal epitaxial layer with lattice constant slightly larger than the single crystal substrate. Such epitaxial layers are conveniently grown using substituents that increase the lattice constant compared to the single crystal substrate.

CR4+DOPED MIXED ALLOY LASER MATERIALS AND LASERS AND METHODS USING THE MATERIALS

A laser medium includes a single crystal of Cr⁴⁺:Mg_2-xM_xSi_1-yA_yO₄, where, where M is a bivalent ion having an ionic radius larger than Mg²⁺, and A is a tetravalent ion having an ionic radius larger than Si⁴⁺. In addition, either a) 0<=x<2 and 02+ and x=1 then y is not 0. The laser medium can be used in a laser device, such as a tunable near infrared (NIR) laser.

Method of making magnetic film-substrate composites

Magnetic film-substrate composites of enhanced quality are provided by rotating a garnet substrate immersed in a melt of magnetic film material to obtain a growth of magnetic film having uniaxial anistropy on the substrate normal to the substrate surface and maintaining the immersed substrate stationary in the melt after a desired film growth has been achieved to effect enhancement of the anisotropy constant of the film.

Method of growing single crystals of rare earth metal iron garnet materials

A method of growing monocrystalline bismuth rare earth iron garnet, either as a single crystal or as an epitaxial layer, from a solution containing composing components of the garnet together with a flux. The flux consists essentially of a mixture of Bi2O3 and RO2, wherein R is at least one of the elements Si, Ge, Ti, Sn, Zr, Ce and Te, wherein the system Bi2O3-RO2 includes a eutectic composition having a eutectic temperature which is below the melting temperature of pure Bi2O3. By using these Bi2O3-RO2 fluxes, the monocrystalline garnets produced have lower optical absorption coefficients at, for example 5100 A and 5600 A than similar garnets grown using lead-containing fluxes. Furthermore higher growth rates and higher growth temperatures are possible when using the Bi2O3-RO2 fluxes rather than lead-containing fluxes.

Method for preparing silicon carbide single crystal

A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.

GROUP 13 ELEMENT NITRIDE CRYSTAL SUBSTRATE AND FUNCTION ELEMENT

A crystal substrate 1 includes an underlying layer 2 and a thick film 3. The underlying layer 2 is composed of a crystal of a nitride of a group 13 element and includes a first main face 2a and a second main face 2b. The thick film 3 is composed of a crystal of a nitride of a group 13 element and provided over the first main face of the underlying layer. The underlying layer 2 includes a low carrier concentration region 5 and a high carrier concentration region 4 both extending between the first main face 2a and the second main face 2b. The low carrier concentration region 5 has a carrier concentration of 1017/cm3 or lower and a defect density of 107/cm2 or lower. The high carrier concentration region 4 has a carrier concentration of 1019/cm3 or higher and a defect density of 108/cm2 or higher. The thick film 3 has a carrier concentration of 1018/cm3 or higher and 1019/cm3 or lower and a defect density of 107/cm2 or lower.

Faraday rotator for optical isolator

A bismuth-substituted rare earth iron garnet single crystal film is represented by a general equation TbxLuyBi3-x-yFe5-zAlzO12 (where 0.09 y/x 0.23, 1.40 x + y 1.70, 0.20 z 0.38) grown on a non-magnetic garnet substrate (CaGd)3(MgZrGa)5O12 having a lattice constant of 12.490 Å - 12.500 Å by a liquid phase epitaxial method. The bismuth-substituted rare earth iron garnet single crystal film satisfies three conditions that (1) the Faraday effect is large, i.e., the film thickness required for the Faraday rotator at a wavelength of 1.55 µm is 450 µm or less, (2) the saturated magnetic field is 800 (Oe) or less, and (3) the temperature coefficient is 0.07 deg/°C or less. ...

Method for producing AlN single crystal and AlN single crystal

複合基板、その製造方法、機能素子および種結晶基板

АЛМАЗНЫЙ МАТЕРИАЛ ОПТИЧЕСКОГО КАЧЕСТВА

FIELD: technological process. ^ SUBSTANCE: invention pertains to the technology of obtaining monocrystalline diamond material and can be used in optics for making optical and laser windows, optical reflectors and refractors, diffraction grating and calibration devices. The diamond material is obtained using chemical vapour deposition method (CVDM) in the presence of a controlled nitrogen level, which allows for controlling development of crystal defects and therefore obtain diamond material with basic characteristics, necessary for use in optics. ^ EFFECT: material with basic characteristics, necessary for use in optics. ^ 75 cl, 8 tbl, 15 ex, 9 dwg ÐÎÑÑÈÉÑÊÀß ÔÅÄÅÐÀÖÈß (19) RU (11) 2 332 531 (13) C2 (51) ÌÏÊ C30B C30B G02B A44C 25/02 (2006.01) 29/04 (2006.01) 1/02 (2006.01) 17/00 (2006.01) ÔÅÄÅÐÀËÜÍÀß ÑËÓÆÁÀ ÏÎ ÈÍÒÅËËÅÊÒÓÀËÜÍÎÉ ÑÎÁÑÒÂÅÍÍÎÑÒÈ, ÏÀÒÅÍÒÀÌ È ÒÎÂÀÐÍÛÌ ÇÍÀÊÀÌ (12) ÎÏÈÑÀÍÈÅ ÈÇÎÁÐÅÒÅÍÈß Ê ÏÀÒÅÍÒÓ (21), (22) Çà âêà: 2005119631/15, 20.11.2003 (24) Äàòà íà÷àëà îòñ÷åòà ñðîêà äåéñòâè ïàòåíòà: 20.11.2003 (30) Êîíâåíöèîííûé ïðèîðèòåò: 21.11.2002 (ïï.1-75) GB 0227261.5 (43) Äàòà ïóáëèêàöèè çà âêè: 27.12.2006 R U (72) Àâòîð(û): ÃÎÄÔÐÈÄ Ãåðìàí Ôèëèï (NL), ÑÊÀÐÑÁÐÓÊ Äæåôôðè Àëàí (GB), ÒÓÈÒ×ÅÍ Äàíèåë Äæåéìñ (GB), ÕÀÓÂÌÀÍ Ýâåðò Ïèòåð (NL), ÍÅËÈÑÑÅÍ Âèëõåëìóñ Ãåðòðóäà Ìàðè (NL), ÓÀÉÒÕÅÄ Ýíäðüþ Äæîí (GB), ÕÀËË Êëàéâ Ýäâàðä (NL), ÌÀÐÒÈÍÎÓ Ôèëèï Ìîðèñ (GB) (45) Îïóáëèêîâàíî: 27.08.2008 Áþë. ¹ 24 (73) Ïàòåíòîîáëàäàòåëü(è): ÝËÅÌÅÍÒ ÑÈÊÑ ËÈÌÈÒÅÄ (GB) 2 3 3 2 5 3 1 R U (86) Çà âêà PCT: IB 03/05281 (20.11.2003) C 2 C 2 (85) Äàòà ïåðåâîäà çà âêè PCT íà íàöèîíàëüíóþ ôàçó: 21.06.2005 (87) Ïóáëèêàöè PCT: WO 2004/046427 (03.06.2004) Àäðåñ äë ïåðåïèñêè: 101000, Ìîñêâà, Ì.Çëàòîóñòèíñêèé ïåð., 10, êâ.15, ÅÂÐÎÌÀÐÊÏÀÒ, ïàò.ïîâ. Ì.Á.Âåñåëèöêîìó (54) ÀËÌÀÇÍÛÉ ÌÀÒÅÐÈÀË ÎÏÒÈ×ÅÑÊÎÃÎ ÊÀ×ÅÑÒÂÀ (57) Ðåôåðàò: Èçîáðåòåíèå îòíîñèòñ ê òåõíîëîãèè ïîëó÷åíè ìîíîêðèñòàëëè÷åñêîãî àëìàçíîãî ìàòåðèàëà è ìîæåò áûòü èñïîëüçîâàíî â îïòèêå äë èçãîòîâëåíè îïòè÷åñêèõ è ëàçåðíûõ îêîí, îïòè÷åñêèõ ðåôëåêòîðîâ è ...

СПОСОБ ПОЛУЧЕНИЯ СВЕРХПРОВОДЯЩЕГО ТОНКОПЛЕНОЧНОГО МАТЕРИАЛА, СВЕРХПРОВОДЯЩЕЕ УСТРОЙСТВО И СВЕРХПРОВОДЯЩИЙ ТОНКОПЛЕНОЧНЫЙ МАТЕРИАЛ

Способ получения сверхпроводящего тонкопленочного материала включает парофазный этап создания сверхпроводящего слоя (3) парофазным способом и жидкофазный этап создания сверхпроводящего слоя (4) жидкофазным способом, причем последний сверхпроводящий слой (4) находится в контакте с первым сверхпроводящим слоем (3). Предпочтительно способ включает, кроме того, этап образования промежуточного слоя (2) между первым сверхпроводящим слоем (3) и металлической подложкой (1). Металлическая подложка (1) сделана из металла, а промежуточный слой (2) предпочтительно сделан из оксида, имеющего кристаллическую структуру, являющуюся одной из структур типа скальной породы, типа перовскита и типа пирохлора, причем как первый сверхпроводящий слой (3), так последний сверхпроводящий слой (4) имеют состав RE123. Техническим результатом предложенного изобретения является повышение критической плотности тока и значений критического тока. 5 н. и 3 з.п. ф-лы, 10 ил., 1 табл.

Verfahren und Vorrichtung zur Herstellung einkristalliner Oxydfilmen

Herstellungsverfahren eines III-V-Verbindungskristalls und Herstellungsverfahren für eine Halbleitervorrichtung

Angegeben wird ein Verfahren zur Herstellung eines III-V-Verbindungskristalls, das einen Schritt der Zurverfügungstellung eines Keimkristall-gebildeten Substrates zur Verfügungstellung eines Keimkristall-gebildeten Substrates, worin ein III-V-Verbindungskeimkristall auf einem Substrat gebildet ist, einen Keimkristall-Teiltrennschritt zum Trennen eines Teils eines Bereiches, der mit dem Substrat in dem III-V-Verbindungskeimkristall in Kontakt steht, von dem Substrat und einen Kristallwachstumsschritt enthält, zum Erzeugen und Wachsen lassen des III-V-Verbindungskristalls durch Reaktion eines Elementes der Gruppe III und eines Elementes der Gruppe V durch Verwendung des III-V-Verbindungskeimkristalls als Nukleus nach dem Keimkristall-Teiltrennschritt.

THERMISCHE BEHANDLUNG VON SUBSTRATPLAETTCHEN

Monotyp-Lichtwellenleiter

Monotyp (Monomode)-Lichtwellenleiter, der einen LiNbO3-Kristall in Form einer Dünnfilmwellenleiterschicht aufweist, welche einen Na-Gehalt in einem Bereich von 0,1 bis 14,3 Mol% und einen Mg-Gehalt in einem Bereich von 0,8 bis 10,8 Mol% umfaßt, wodurch eine Gitterabstimmung der LiNbO3-Dünnfilmwellenleiterschicht und des LiTaO3-Einkristallsubstrats erfolgt, und daß folgender Zusammenhang erfüllt ist: beim TM-Typ 1.9 < (T + 0.7)/λ < 5.7 (T > 0) beim TE-Typ 0.29 < (T + 0.04)/λ < 1.19 (T > 0) wobei T (μm) eine Dicke der Wellenleiterschicht darstellt und λ (μm) eine Wellenlänge der geführten Welle ist, dadurch gekennzeichnet, dass die Form des Lichtwellenleiters den folgenden Zusammenhang erfüllt: beim TM-Typ W ≤ (4λ - 0.5) x (λ2/ΔT + 2.0) beim TE-Typ W ≤ (0.04λ3 + 0.1λ2)/ΔT + 2.5λ wobei der Wellenleiter ein Steg-Wellenleiter ist, W (μm) eine Breite des Wellenleiters darstellt und ΔT (μm) eine Ätztiefe darstellt.

Verfahren zum Herstellen einer Halbleiteranordnung,bestehend aus einer Folge von duennen,vorzugsweise einkristallinen Schichten aus unterschiedlichen Materialien

Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls

Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls auf einem Einkristallsubstrat umfassend die Schritte des Heizens von Silizium in einem Graphittiegel, um eine Schmelze zu bilden, des Inkontaktbringens eines Siliziumcarbideinkristallsubstrats mit der Schmelze, und des Abscheidens und Aufwachsens eines Siliziumcarbideinkristalls aus der Schmelze, wobei die Schmelze 30 bis 70 Atom% Chrom basierend auf der Gesamtatommenge der Schmelze und 1 bis 25 Atom% X basierend auf der Gesamtatommenge der Schmelze, wobei X mindestens eines ausgewählt ist aus der Gruppe bestehend aus Nickel und Kobalt, und Kohlenstoff umfasst.

EPITAXIAL STRENGTHENING OF CRYSTALS

Semiconductor material

A semiconductor material comprises Sn doped InGaP. The mixed crystal composition of the Sn doped InGaP layer as expressed by the molar fraction of GaP is 0.50 to 0.75. The material 2, 3, 4 forms part of a structure with a GaAs substrate 1 to form a light emitting diode or laser diode which emits visible light of 550 to 650 nm band wavelength. According to the method for developing mixed crystals of InGaP, GaP and InP are dissolved in Sn to make a solution. The solution is allowed to come in contact with a GaAs substrate so that InGaP crystals are developed directly on the GaAs substrate without a gradient layer for coordinating the lattice constant formed on the GaAs substrate. ...

Optical quality diamond material

Improvements in and relating to semiconductor devices

... 1,087,134. Semi-conductor devices. MULLARD Ltd. June 23, 1964 [July 17, 1963], No. 28298/63. Heading H1K. A heterojunction semi-conductor device is made by forming on a body of an A III B V compound or a mixed crystal of two or more such compounds (e.g. GaAs x P 1-x ) a melt comprising said compound or mixed crystal and another A III B V compound and a carrier material and recrystallizing to form an epitaxial layer consisting of a solid solution thereof. In a typical example an alloy of bismuth, 80 parts by weight, and gallium antimonide 20 parts, is placed on one face of a tellurium doped N-type gallium arsenide wafer and an alloy of bismuth, tin and platinum on the other. After etching in a solution of bromine in methanol the assembly is heated at 550‹ C. for 2 hours and then cooled over a period of 3 hours. After etching again platinum wires are soldered to the alloy residues to complete a rectifier diode with a PN heterojunction. A photo-diode is similarly formed but using an alloy ...

Disc resonators

Disc resonators, for use in microwave oscillators and filters, comprise monocrystalline A3(- Ga1-pDp)5O12 substrates bearing epitaxial ferrimagnetic Y3Fe5-xMxO12 layers. The difference between the lattice constants a0 of the substrate and layer materials is not more than 0.0003nm. In the above formulae, A is at least one element from group IIIA of the Mendeleev periodic table, D is a non-magnetic ion which is smaller than the gallium ion and occupies octahedral and tetrahedral sites in the garnet lattice, x>0, p>/=0. A does not consist solely of Gd when p = 0.

Improvements in or relating to methods of manufacturing i-n or i-p junctions

... 909,701. Semi-conductor devices; electrolytic dissolution of lead. COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. March 3, 1959 [March 6, 1958], No. 7344/59. Drawings to Specification. Classes 37 and 41. An I-N or I-P junction in a germanium body is produced by heating a pellet of lead or lead-germanium alloy in contact with the body and recrystallizing whereby the recrystallized lead then contains impurities removed from the germanium body to leave a substantially intrinsic region. The impurity-containing lead may be removed by washing with chromic acid or electrolytic etching in lead acetate solution. A very small amount of significant impurity may be contained in the pellet to compensate for slight residual N or P-type conductivity which may be present in the substantially intrinsic region. Arsenic and indium are given as examples of impurities. The invention may be applied to a field effect type of transistor having source and drain electrodes provided on a thin intrinsic region.

method for sythesising diamond

Improvements in and relating to semiconductor devices

... 1,105,314. Semi-conductor devices. MULLARD Ltd. 19 Nov., 1964 [23 Dec., 1963], No. 50672/63. Heading H1K. A semi-conductor device contains a junction between a region of a single or mixed crystal AIIIBV compound and a region of a manganese arsenide having a composition in the range Mn 1 . 9 As to Mn 2 . 3 As. During the formation of the junction it is possible that one or more very thin intermediate layers of further compounds (e.g. Mn 3 As 2 ) or of material having different electrical properties or different crystalline structure may be formed between the two regions. Such layers if present have a total maximum thickness of the order of 1 Á. Junctions may be made having the characteristics of PN, PP, or NN junctions. They are incorporated in devices such as high-speed switching diodes, tunnel diodes, or especially in photo diodes and in opto-electronic transistors in which they form the collector-base junction. Each of the three embodiments specifically described is ...

MATERIAL FOR LIGHT EMITTING ELEMENT

Semiconductor device, particularly photodiode or opto-electronic transistor

IMPROVED SOLUTION GROWTH OF SILICON FILMS

Crystallization from high-temperature solutions of Si in copper

Method of production of sic single crystal

The present invention provides a method of production of SiC single crystal using the solution method which prevents the formation of defects due to causing a seed crystal to touch the melt for seed touch, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal which causes an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt in the state where the C is not yet saturated.

MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF A GROUP III NITRIDE CRYSTAL

A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal. 117-. (canceled)18. A method for manufacturing a group III nitride crystal in a holding vessel holding a melt containing a group III metal , an alkali metal and nitrogen , comprising the steps of:contacting a seed crystal with said melt when a nitrogen concentration in said melt is stabilized; andgrowing said seed crystal.19. The method for manufacturing a group III nitride crystal as claimed in claim 18 , wherein said nitrogen concentration is stabilized as a result of nucleation claim 18 , by increasing said nitrogen concentration to a concentration where nucleation takes place.20. The method for manufacturing a group III nitride crystal as claimed in claim 19 , further comprising the step of removing microcrystals grown from said nuclei from said melt before causing said seed crystal to contact with said melt.21. The method for manufacturing a group III nitride crystal as claimed in claim 20 , wherein said removing step comprises the steps of:submerging said holding vessel in a fixed auxiliary vessel filled with said melt; andpulling up said holding vessel fro said fixed auxiliary vessel when said nitrogen concentration in said melt is stabilized, wherein said step of causing said seed crystal to make contact with said melt is conducted such that said seed crystal is ...

Method of Manufacturing III-Nitride Crystal

Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates. 1. A method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001} , designated by choice , the III-nitride crystal manufacturing method including:a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation;a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; anda step of growing III-nitride crystal onto the major surfaces of the substrates.2. A III-nitride crystal manufacturing method as set forth in claim 1 , wherein the designated plane orientation is misoriented by an off angle of 5° or less with respect to any crystallographically equivalent plane orientation selected from the group consisting of {1−10x} (wherein x is a whole number) claim 1 , {11−2y} ( ...

GaN Whiskers and Methods of Growing Them from Solution

Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL AND METHOD FOR PRODUCING A GaN SUBSTRATE

The present invention provides a method for producing a Group III nitride semiconductor single crystal having excellent crystallinity, and a method for producing a GaN substrate having excellent crystallinity, the method including controlling melting back. Specifically, a mask layer is formed on a GaN substrate serving as a growth substrate. Then, a plurality of trenches which penetrate the mask layer and reach the GaN substrate are formed through photolithography. The obtained seed crystal and raw materials of a single crystal are fed to a crucible and subjected to treatment under pressurized and high temperature conditions. Portions of the GaN substrate exposed to the trenches undergo melting back with a flux. Through dissolution of the GaN substrate, the dimensions of the trenches increase, to provide large trenches. The GaN layer is grown from the surface of the mask layer as a starting point. 1. A method for producing a Group III nitride semiconductor single crystal , the method comprising:{'sub': x', 'y', '(1-X-Y), 'a seed crystal preparation step of preparing a seed crystal, which step comprises forming a mask layer made of AlInGaN (0 Подробнее

Group iii nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device

Objects of the present invention are to provide a method for producing a Group III nitride semiconductor single crystal, which method enables production of a Group III nitride semiconductor single crystal having a flat surface by means of a crucible having any inside diameter; to provide a self-standing substrate obtained from the Group III nitride semiconductor single crystal; and to provide a semiconductor device employing the self-standing substrate. The production method includes adding the template, a flux, and semiconductor raw materials to a crucible and growing a Group III nitride semiconductor single crystal while the crucible is rotated. In the growth of the semiconductor single crystal, the crucible having an inside diameter R (mm) is rotated at a maximum rotation speed ω (rpm) satisfying the following conditions: ω1−4≦ω≦ω1+4; ω1=10 z ; and z=−0.78× log 10 ( R )+3.1.

Crystal growth apparatus and manufacturing method of group iii nitride crystal

A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

Composite of III-Nitride Crystal on Laterally Stacked Substrates

Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. With x-ray diffraction FWHMs being measured along an axis defined by a <0001> direction of the substrate projected onto either of the major surfaces, FWHM peak regions are present at intervals of 3 to 5 mm width. Also, with threading dislocation density being measured along a <0001> direction of the III-nitride crystal substrate, threading-dislocation-density peak regions are present at the 3 to 5 mm intervals.

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL ELEMENT, AND METHOD OF PRODUCING GROUP 13 ELEMENT NITRIDE LAYER

A group 13 nitride layer is composed of a polycrystalline group 13 nitride and is constituted by a plurality of monocrystalline particles having a particular crystal orientation approximately in a normal direction. The group 13 nitride comprises gallium nitride, aluminum nitride, indium nitride or the mixed crystal thereof. The group 13 nitride layer includes an upper surface and a bottom surface, and a full width at half maximum of a (1000) plane reflection of X-ray rocking curve on the upper surface is 20000 seconds or less and 1500 seconds or more. 1. A group 13 nitride layer comprising a polycrystalline group 13 nitride ,said group 13 nitride layer comprising a plurality of monocrystalline particles having a particular crystal orientation approximately in a normal direction,wherein said group 13 nitride comprises gallium nitride, aluminum nitride, indium nitride or the mixed crystal thereof,wherein said group 13 nitride layer comprises an upper surface and a bottom surface, andwherein a full width at half maximum of a (1000) plane reflection of an X-ray rocking curve on said upper surface is 20000 seconds or more and 1500 seconds or less.2. The group 13 nitride layer of claim 1 ,wherein said monocrystalline particles exposed to said upper surface of said group 13 nitride layer is communicated with said bottom surface of said group 13 nitride layer without intervening a particle boundary, andwherein a ratio DT/DB of an average cross-sectional diameter DT at outermost surfaces of said monocrystalline particles exposed to said upper surface of said group 13 nitride layer with respect to an average cross-sectional diameter DB at outermost surfaces of said monocrystalline particles exposed to said bottom surface of said group 13 nitride layer exceeds 1.0.3. The group 13 nitride layer of claim 2 , wherein said average cross-sectional diameter DT at said outermost surfaces of said monocrystalline particles exposed to said upper surface is 10 μm or larger.4. The group ...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD FOR EPITAXIAL SUBSTRATES FOR SEMICONDUCTOR ELEMENTS

Provided is an epitaxial substrate for semiconductor elements which suppresses an occurrence of current collapse. The epitaxial substrate for the semiconductor elements includes: a semi-insulating free-standing substrate formed of GaN being doped with Zn; a buffer layer being adjacent to the free-standing substrate; a channel layer being adjacent to the buffer layer; and a barrier layer being provided on an opposite side of the buffer layer with the channel layer therebetween, wherein the buffer layer is a diffusion suppressing layer that suppresses diffusion of Zn from the free-standing substrate into the channel layer. 1. An epitaxial substrate for semiconductor elements , comprising:a semi-insulating free-standing substrate formed of GaN being doped with Zn;{'sup': 18', '−3, 'a buffer layer being adjacent to said free-standing substrate and being a group 13 nitride layer that is doped with C at a concentration equal to or higher than 1×10cmin at least part of said buffer layer in a thickness direction;'}a channel layer being adjacent to said buffer layer; anda barrier layer being provided on an opposite side of said buffer layer with said channel layer therebetween, whereinsaid buffer layer is a diffusion suppressing layer that suppresses diffusion of Zn from said free-standing substrate into said channel layer, and{'sup': 16', '−3, 'a concentration of Zn in said channel layer is equal to or lower than 1×10cm.'}2. The epitaxial substrate for the semiconductor elements according to claim 1 , whereinsaid group 13 nitride layer is a GaN layer.3. The epitaxial substrate for the semiconductor elements according to claim 1 , whereinsaid group 13 nitride layer is either of{'sup': 18', '−3, 'a multi-layered buffer layer, which is formed by laminating two or more group 13 nitride layers having different compositions, at least one of said two or more group 13 nitride layers being doped with C at a concentration of 1×10cmor more, or'}a composition gradient buffer layer ...

METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE

A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×10cmin a crystal near the principal surface over an entire in-plane region thereof. 1. A method for manufacturing a group III nitride semiconductor crystal substrate , comprising:providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method; andhomoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate,{'sup': 17', '−3, 'wherein the principal surface of the seed crystal substrate is a +c-plane, and wherein the seed crystal substrate has an atomic oxygen concentration of not more than 1×10cmin a crystal near the principal surface over an entire in-plane region thereof.'}2. The method for manufacturing a group m nitride semiconductor crystal substrate according to claim 1 , wherein the group III nitride single crystal grown on the seed crystal substrate by the vapor phase growth method has an atomic oxygen concentration of not more than 1×10cmin the crystal.3. The method for manufacturing a group III nitride semiconductor crystal substrate according to claim 1 , wherein the seed crystal substrate comprises claim 1 , at least on the principal surface claim 1 , a crystalline region grown in a state that a flat growth interface in two-dimensional growth mode is maintained during crystal growth.4. The method for manufacturing a group III nitride semiconductor crystal substrate according to claim 1 , wherein the seed crystal substrate comprises a ...

OPTICAL QUALITY DIAMOND MATERIAL

A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications. 1. A CVD single crystal diamond material which shows a low and uniform optical scatter such that for a sample of a specified thickness of at least 0.4 mm the forward scatter at 1.064 μm , measured over a specified area of at least 1.3 mm×1.3 mm , integrated over a solid angle from 3.5° to 87.5° from the transmitted beam , is less than 0.4% , when measured at 20° C.2. A CVD single crystal diamond material according to claim 1 , wherein the forward scatter at a wavelength of 1.064 μm measured in sample of the specified thickness and area claim 1 , integrated over a solid angle from 3.5° to 87.5° from the transmitted beam claim 1 , is less than 0.2%.3. A CVD single crystal diamond material according to claim 2 , which exhibits a forward scatter at 1.064 μm of less than 0.1%.4. A CVD single crystal diamond material according to claim 1 , wherein the diamond material has a single substitutional nitrogen concentration of more than 3×10atoms/cmand less than 5×10atoms/cmas measured by electron paramagnetic resonance (EPR).5. A CVD single crystal diamond material according to claim 1 , which shows a low optical birefringence claim 1 , indicative of low strain claim 1 , such that when a sample of the material is prepared as an optical plate having a thickness of at least 0.5 mm thickness and measured at 20° C. claim 1 , over an area of at least 1.3 mm×1.3 mm claim 1 , |sin δ| claim 1 , the modulus of the sine of the phase shift claim 1 , for at least 98% of the ...

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

A method for producing a Group III nitride semiconductor includes feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate. At least an oxidation amount of Na, serving as the flux, is controlled outside the furnace, and the controlled Na is fed into the furnace. 1. A method for producing a Group III nitride semiconductor , the method comprising:feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate,wherein at least an oxidation amount of Na, serving as the flux, is controlled outside the furnace, and the controlled Na is fed into the furnace.2. The method for producing the Group III nitride semiconductor production according to claim 1 , wherein molten Na claim 1 , prepared by liquefying Na claim 1 , is circulated through a first state where the temperature is maintained at a first temperature and a second state where a temperature is maintained at a second temperature lower than the first temperature claim 1 , whereby oxidized Na claim 1 , contained in the molten Na claim 1 , is removed in the second state claim 1 , and the oxidation amount of Na is regulated by modifying the second temperature.3. The method for producing the Group III nitride semiconductor production according to claim 2 , wherein the second temperature is controlled in a range from 120° C. to 300° C.4. The method for producing the Group III nitride semiconductor production according to claim 3 , wherein circulation of molten Na claim 3 , performed for controlling the oxidation amount of Na and purity of Na claim 3 , is conducted by a circulation apparatus claim 3 ,wherein the Na circulation apparatus includes a circulation path for converting an Na material to liquid and causing the liquid to flow, andwherein the circulation path includes an Na purity ...

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

A low-resistance p-type SiC single crystal containing no inclusions is provided. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient in which the temperature falls from the interior toward the surface, to grow a SiC single crystal, and wherein the method comprises: using, as the Si—C solution, a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al, and making the temperature gradient y (° C./cm) in the surface region of the Si—C solution satisfy the following formula (1): y≧0.15789x+21.52632 (1) wherein x represents the Al content (at %) of the Si—C solution. 1. A method for producing a SiC single crystal wherein a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient in which the temperature falls from the interior toward the surface , to grow a SiC single crystal , and wherein the method comprises:using, as the Si—C solution, a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al, and {'br': None, 'i': y≧', 'x+, '0.1578921.52632\u2003\u2003(1)'}, 'making the temperature gradient y (° C./cm) in the surface region of the Si—C solution satisfy the following formula (1)wherein x represents the Al content (at %) of the Si—C solution.2. The method for producing a SiC single crystal according to claim 1 , comprising limiting the temperature gradient in the surface region of the Si—C solution to the range of 28 to 55° C./cm with the Al content in the range of 3 to 41 (at %) in the Si—C solution.3. A p-type SiC single crystal containing no inclusions and having resistivity of 35 to 120 mΩ·cm. The present invention relates to a SiC single crystal that is suitable as a semiconductor element, and to a method for producing the same.SiC single crystals are thermally and chemically very stable, ...

Method for producing group iii nitride semiconductor

To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.

Method for Peeling Group 13 Element Nitride Film

A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and the group 13 element under nitrogen containing atmosphere. The film 3 of the nitride of the group 13 element includes an inclusion distributed layer 3 a in a region distant from an interface 11 a of the film 3 of the nitride of the group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3 b, with the inclusion depleted. provided on the layer 3 a. Laser light A is irradiated from the side of the back face 1 b of the seed crystal substrate 11 to peel the single crystal 3 of the nitride of the group 13 element from the seed crystal substrate 11 by laser lift-off method.

METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, AND DEVICE FOR PRODUCING GROUP-III NITRIDE CRYSTAL

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first crystal by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals to produce a first crystal 1. A method for producing a Group III nitride crystal , comprising:a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a seed crystal selection step of selecting a plurality of parts of a preliminarily provided Group III nitride as seed crystals for generation and growth of Group III nitride crystals;', 'a contact step of bringing the surfaces of the seed crystals into contact with an alkali metal melt; and', 'a Group III nitride crystal liquid phase growth step of causing a Group III element and nitrogen to react with each other in a nitrogen-containing atmosphere in the alkali metal melt to generate and grow Group III nitride crystals, wherein, 'a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first Group III nitride crystal by vapor phase epitaxy, the first Group III nitride crystal production process comprisingin the Group III nitride crystal liquid phase growth step, the Group III nitride ...

PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first crystal by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals to produce a first crystal 1. A method for producing a Group III nitride crystal , comprising:a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a seed crystal selection step of selecting a plurality of parts of a preliminarily provided Group III nitride as seed crystals for generation and growth of Group III nitride crystals;', 'a contact step of bringing the surfaces of the seed crystals into contact with an alkali metal melt; and', 'a Group III nitride crystal liquid phase growth step of causing a Group III element and nitrogen to react with each other in a nitrogen-containing atmosphere in the alkali metal melt to generate and grow Group III nitride crystals, wherein, 'a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first Group III nitride crystal by vapor phase epitaxy, the first Group III nitride crystal production ...

Method for Producing Group III Nitride Semiconductor, Seed Substrate and Group III Nitride Semiconductor Crystal

The seed substrate comprises a base substrate and a base layer comprising a Group III nitride semiconductor formed on the base substrate, which has a high dislocation density region and a low dislocation density region. The planar pattern of the high dislocation density region is a honeycomb pattern. A hollow exists between the base substrate and the low dislocation density region. The object layer is grown through a flux method using the seed substrate. The high dislocation density region is melted back at an initial stage of crystal growth, and thereafter, the object layer is grown on the top surface of the low dislocation density region. A cavity remains between the high dislocation density region and the object layer. The presence of the cavity and the hollow makes easy to peel the object layer from the seed substrate.

COMPOSITE SUBSTRATE, METHOD FOR FABRICATING SAME, FUNCTION ELEMENT, AND SEED CRYSTAL SUBSTRATE

A composite substrate includes a polycrystalline ceramic substrate, a silicon substrate directly bonded to the polycrystalline ceramic substrate, a seed crystal film formed on the silicon substrate by vapor phase process and made of a nitride of a group 13 element, and a gallium nitride crystal layer grown on the seed crystal film by flux method. 1. A method for manufacturing a composite substrate , said method comprising the steps of:thinning a silicon substrate of a composite body, said composite body comprising a polycrystalline ceramic substrate and said silicon substrate directly bonded with each other;depositing a seed crystal film comprising a nitride of a group 13 element on said silicon substrate by a gas-phase method; andgrowing a gallium nitride crystal layer on said seed crystal film by a flux method.2. The method of claim 1 , wherein said nitride of said group 13 element comprises gallium nitride.3. The method of claim 1 , wherein said polycrystalline ceramic substrate comprises alumina or aluminum nitride.4. The method of claim 1 , wherein said silicon substrate is thinned to a thickness of not less than 0.2 μm nor more than 8 μm in said thinning step claim 1 ,5. A method of manufacturing a functional element claim 1 , said method comprising the steps of:thinning a silicon body of a composite body, said composite body comprising a polycrystalline ceramic substrate and said silicon substrate directly bonded with each other;depositing a seed crystal film comprising a nitride of a group 13 element on said silicon substrate by a gas-phase method;growing a gallium nitride crystal layer on said seed crystal film by a flux method; andforming a functional layer comprising a nitride of a group 13 element on said gallium nitride crystal layer by a gas-phase method.6. The method of claim 5 , wherein said functional layer has a function of emitting light.7. The method of claim 5 , wherein said nitride of said group 13 element comprises gallium nitride.8. The ...

BARIUM TETRABORATE COMPOUND AND BARIUM TETRABORATE NON-LINEAR OPTICAL CRYSTAL, AND PREPARATION METHOD AND USE THEREOF

The present invention relates to a barium tetraborate compound and a barium tetraborate non-linear optical crystal, and a preparation method and use thereof, wherein the chemical formulae of the barium tetraborate compound and the non-linear optical crystal thereof are both BaBO, with a molecular weight of 292.58; the barium tetraborate non-linear optical crystal has a non-centrosymmetric structure, which belongs to a hexagonal system, and has a space group P6and lattice parameters of a=6.7233(6) Å, c=18.776(4) Å, V=735.01(17) Å, and Z=6, wherein the powder frequency-doubled effect thereof is two times that of KDP (KHPO), and the ultraviolet cut-off edge is lower than 170 nm. The barium tetraborate compound is synthesised by a solid-phase reaction method; the barium tetraborate non-linear optical crystal is grown by a high-temperature molten solution method; and the crystal has a moderate mechanical hardness, is easy to cut, polish and store, and is widely applicable in the non-linear optics of a double-frequency doubling generator, an upper frequency converter, a lower frequency converter or an optical parameter oscillator etc. 1. A barium tetraborate compound , wherein the compound has a chemical formula of BaBOand a molecular weight of 292.58 , the compound has a non-centrosymmetric structure , belongs to a hexagonal crystal system , has a space group P6 , with lattice parameters of a=6.7233(6) Å , c=18.776(4) Å , V=735.01(17) Åand Z=6.2. A barium tetraborate non-linear optical crystal , wherein the crystal has a chemical formula of BaBOand a molecular weight of 292.58 , the crystal is non-centrosymmetric , belongs to a hexagonal crystal system , has a space group P6 , with lattice parameters of a=6.7233(6) Å , c=18.776(4) Å , V=735.01(17) Åand Z=6.3. A preparation method of the barium tetraborate non-linear optical crystal according to claim 2 , wherein it uses the high temperature solution method to make the crystal growing claim 2 , and is conducted ...

GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, SELF-SUPPORTING SUBSTRATE, AND FUNCTIONAL ELEMENT

A group 13 nitride crystal layer is composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, and the group 13 nitride crystal layer includes an upper surface and bottom surface. The group 13 nitride crystal layer includes high-luminance layers and low-luminance layers being present alternately, and the low-luminance layers have thicknesses of 3 or larger and 10 or smaller provided that 1 is assigned to a thickness of the high-luminance layer, when a cross section of the group 13 nitride crystal layer cut in a direction perpendicular to the upper surface is observed by cathode luminescence. 1. A group 13 nitride crystal layer comprising a group 13 nitride crystal selected from gallium nitride , aluminum nitride , indium nitride or the mixed crystals thereof , said group 13 nitride crystal layer comprising an upper surface and bottom surface ,wherein said group 13 nitride crystal layer comprises high-luminance layers and low-luminance layers being present alternately and wherein said low-luminance layers have thicknesses of 3 or larger and 10 or smaller provided that 1 is assigned to a thickness of said high-luminance layer, when a cross section of said group 13 nitride crystal layer cut in a direction perpendicular to said upper surface is observed by cathode luminescence.2. The group 13 nitride crystal layer of claim 1 , wherein a total of thicknesses of one of said high-luminance layers and one of said low-luminance layers adjacent to each other is 4 μm or smaller.3. The group 13 nitride crystal layer of claim 1 , further comprising a low-luminance band extending in a direction intersecting said upper surface.4. The group 13 nitride crystal layer of claim 1 , wherein a ratio of the maximum value and the minimum value of said total of said thicknesses of said one of said high-luminance layers and said one of said low-luminance layers adjacent to each other is 1.8 or smaller.5. The group 13 ...

Li4Sr(BO3)2 Compound, Li4Sr(BO3)2 Nonlinear Optical Crystal, Preparation Method and Use Thereof

The present invention relates to the field of nonlinear optical crystal materials and provided herein a LiSr(BO)compound, a LiSr(BO)nonlinear optical crystal as well as preparation method and use thereof. The LiSr(BO)nonlinear optical crystal has a second harmonic conversion efficiency at 1064 nm of about two times that of a KHPO(KDP) crystal, and an UV absorption cut-off edge less than 190 nm. Furthermore, the crystal did not disintegrate. By flux method with LiO, LiO-BO and LiO-BO-LiF used as flux agent, large-size and transparent LiSr(BO)nonlinear optical crystal can grow. The LiSr(BO)crystal had stable physicochemical properties, moderate hardness, and was easy to cut, processing, preserve and use. Therefore it can be used for preparing nonlinear optical devices and thus for developing nonlinear optical applications in the ultraviolet and deep-ultraviolet band. 1. A compound having a chemical formula of LiSr(BO).2. A nonlinear optical crystal of a LiSr(BO)compound according to claim 1 , wherein the crystal does not contain symmetric center and belongs to monoclinic space group Cwith lattice parameters of α=9.117(5) Å claim 1 , b =5.239(2) Å claim 1 , c =11.762(6) Å claim 1 , β=105.22(1)° claim 1 , V =542.08 (127) Å claim 1 , and Z =4.3. A preparation method of a LiSr(BO)nonlinear optical crystal according to claim 2 , wherein the growth of the LiSr(BO)nonlinear optical crystal is carried out by flux method claim 2 , and the flux agent is selected from LiO claim 2 , LiO-BOor LiO-BO-LiF.4. The preparation method according to claim 3 , wherein the method comprises the following steps:{'sub': 2', '2', '3', '4', '3', '2', '2', '2', '3', '2', '2', '3', '4', '3', '2', '2', '2', '3, 'LiO, SrO and BO, with a molar ratio of 4-8:1:1-3 (equivalent to a molar ratio of LiSr(BO):LiO: BO=1: 2-6: 0-2), or LiO, SrO, BOand LiF, with a molar ratio of 4-8:1: 1-3:1-3 (equivalent to a molar ratio, LiSr(BO): LiO: BO: LiF=1: 2-6: 0-2: 1-3) are mixed, homogeneously ground and melted, and ...

GALLIUM NITRIDE SELF-SUPPORTED SUBSTRATE, LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR

Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 μm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body. 1. A self-supporting gallium nitride substrate composed of a plate composed of a plurality of gallium nitride-based single crystal grains , wherein the plate has a single crystal structure in an approximately normal direction.2. The self-supporting gallium nitride substrate according to claim 1 , wherein a cross-sectional average diameter of the gallium nitride-based single crystal grains at an outermost surface of the substrate is 0.3 μm or greater.3. The self-supporting gallium nitride substrate according to claim 2 , wherein the cross-sectional average diameter is 3 μm or greater.4. The self-supporting gallium nitride substrate according to claim 2 , wherein the cross-sectional average diameter is 20 μm or greater.5. The self-supporting gallium nitride substrate according to claim 1 , having a thickness of 20 μm or greater.6. The self-supporting gallium nitride substrate according to claim 1 , having a diameter of 100 mm or greater.7. The self-supporting gallium nitride substrate according to claim 1 , wherein ...

Method for Producing Nitride of Group-13 Element, and Melt Composition

It is produced a crystal of a nitride of a group 13 element in a melt including the group 13 element and a flux including at least an alkali metal under atmosphere comprising a nitrogen-containing gas. An amount of carbon is made 0.005 to 0.018 atomic percent, provided that 100 atomic percent is assigned to a total amount of said flux, said group 13 element and carbon in said melt.

GALLIUM NITRIDE SELF-SUPPORTED SUBSTRATE, LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR

Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 μm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body. 1. A self-supporting gallium nitride substrate composed of a plate composed of a plurality of gallium nitride-based single crystal grains , wherein the plate has a single crystal structure in an approximately normal direction , wherein an aspect ratio T/D , which is defined as a ratio of a thickness T of the self-supporting gallium nitride substrate to a cross-sectional average diameter Dat an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting gallium nitride substrate , is 0.7 or greater.2. The self-supporting gallium nitride substrate according to claim 1 , wherein a cross-sectional average diameter of the gallium nitride-based single crystal grains at an outermost surface of the substrate is 0.3 μm or greater.3. The self-supporting gallium nitride substrate according to claim 2 , wherein the cross-sectional average diameter is 3 μm or greater.4. The self-supporting gallium nitride substrate according to claim 2 , wherein the cross-sectional ...

Method of Forming a Crystallized Silicon Layer on the Surface of a Plurality of Substrates

The present invention concerns a method of forming, by liquid phase epitaxial growth, on the surface of a plurality of substrates, a layer of crystallised silicon having a grain size greater than or equal to 200 μm, comprising at least the steps consisting of: (i) arranging a liquid bath formed from a liquid metal solvent phase in which liquid silicon is homogeneously dispersed; (ii) immersing, in the bath of step (i), said substrates (), in such a way that each of the surfaces of the substrates () that need to be coated is in contact with the liquid bath, said surfaces being arranged parallel to one another, and perpendicularly to the interface () of the liquid bath () and the gas atmosphere () contiguous to said liquid bath or according to an inclination angle of at least 45° in relation to said interface (); (iii) imposing, on the whole of step (ii), conditions conducive to the vaporisation of said liquid solvent phase and to the establishing of a natural convection movement of the liquid bath in the vicinity of the surfaces to be coated of the substrates, which are held in fixed position; and (iv) recovering the substrates coated with the crystallised silicon layer formed at the end of step (iii). 114.-. (canceled)15. A method of forming a layer of crystalline silicon having a grain size greater than or equal to 200 μm , by liquid phase epitaxial growth on the surface of a plurality of substrates , comprising the steps of:(i) providing a liquid bath formed from a liquid metallic solvent phase, in which liquid silicon is dispersed uniformly;(ii) immersing said substrates in the bath from step (i), so that each of the surfaces of the substrates that are to be coated is in contact with the liquid bath, said surfaces being arranged parallel to one another, and perpendicularly to the interface of the liquid bath and gas atmosphere contiguous with said liquid bath or at an angle of inclination of at least 45° relative to said interface;(iii) imposing, on the whole of ...

ORIENTED ALUMINA SUBSTRATE FOR EPITAXIAL GROWTH

An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more. 1. An oriented alumina substrate for epitaxial growth , comprising:crystalline grains constituting a surface thereof,the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.2. The oriented alumina substrate for epitaxial growth according to claim 1 ,wherein the crystalline grains constituting the surface has an average sintered grain size of 20 μm or more.3. The oriented alumina substrate for epitaxial growth according to claim 1 ,wherein the content of each of Na, Mg, Si, P, Ca, Fe, Ti, and Zn is 1,500 ppm or less.4. The oriented alumina substrate for epitaxial growth according to claim 2 ,wherein the content of each of Na, Mg, Si, P, Ca, Fe, Ti, and Zn is 1,500 ppm or less.5. The oriented alumina substrate for epitaxial growth according to claim 1 ,wherein the content of Mg is 15 ppm or more.6. The oriented alumina substrate for epitaxial growth according to claim 2 ,wherein the content of Mg is 15 ppm or more.7. The oriented alumina substrate for epitaxial growth according to claim 3 ,wherein the content of Mg is 15 ppm or more.8. The oriented alumina substrate for epitaxial growth according to claim 4 ,wherein the content of Mg is 15 ppm or more. The present invention relates to an oriented alumina substrate for epitaxial growth.As substrates for epitaxial growth for light-emitting devices such as light-emitting diodes (LEDs) and semiconductor devices, sapphire (single crystal α-alumina) substrates and composite substrates in which layers of semiconductor crystals such as GaN are grown on sapphire substrates are used. Substrates, for light-emitting devices, having a structure including an n-type GaN ...

ORIENTED ALUMINA SUBSTRATE FOR EPITAXIAL GROWTH

An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 1° or more and 3° or less and an average sintered grain size of 20 μm or more. 1. An oriented alumina substrate for epitaxial growth , comprising:crystalline grains constituting a surface thereof,the crystalline grains having a tilt angle of 1° or more and 3° or less and an average sintered grain size of 20 μm or more.2. The oriented alumina substrate for epitaxial growth according to claim 1 ,wherein the content of each of Na, Mg, Si, P, Ca, Fe, Ti, and Zn is 1,500 ppm or less.3. The oriented alumina substrate for epitaxial growth according to claim 1 ,wherein the content of Mg is 15 ppm or more.4. The oriented alumina substrate for epitaxial growth according to claim 2 ,wherein the content of Mg is 15 ppm or more. The present invention relates to an oriented alumina substrate for epitaxial growth.As substrates for epitaxial growth for light-emitting devices such as light-emitting diodes (LEDs) and semiconductor devices, sapphire (single crystal α-alumina) substrates and composite substrates in which layers of semiconductor crystals such as GaN are grown on sapphire substrates are used. Substrates, for light-emitting devices, having a structure including an n-type GaN layer, multiple quantum well (MQW) layers, and a p-type GaN layer stacked, in this order, on such a substrate for epitaxial growth are mass-produced, the MQW layers including quantum well layers of InGaN layers and barrier layers of GaN layers alternately stacked.However, sapphire substrates are generally small in area and are expensive. The inventors report the use of oriented alumina substrates in place of sapphire substrates (see PTLs 1 and 2). In PTL 1, a substrate for a light-emitting device is produced by forming a GaN seed crystal layer on an oriented alumina substrate by an MOCVD method, ...

OPTICAL QUALITY DIAMOND MATERIAL

A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications. 119-. (canceled)20. A CVD single crystal diamond material comprising:a low optical birefringence, indicative of low strain, such that when a sample of the material is prepared as an optical plate having a thickness of at least 0.5 mm and measured at room temperature, nominally 20° C., over an area of at least 1.3 mm×1.3 mm, |sin δ|, the modulus of the sine of the phase shift, for at least 98% of the measured area of the sample remains in first order, such that δ does not exceed π/2, and |sin δ| does not exceed 0.9.21. A CVD single crystal diamond material according to claim 20 , wherein |sin δ| does not exceed 0.9 over 100% of the measured area of the sample.22. A CVD single crystal diamond material according to claim 20 , wherein |sin δ| does not exceed 0.6 over at least 98% of the measured area of the sample.23. A CVD single crystal diamond material according to claim 20 , wherein |sin δ| does not exceed 0.6 over at least 100% of the measured area of the sample.24. A CVD single crystal diamond material according to claim 20 , wherein the diamond material has a single substitutional nitrogen concentration of more than 3×10atoms/cmand less than 5×10atoms/cmas measured by electron paramagnetic resonance (EPR).25. A CVD single crystal diamond material according to claim 24 , wherein the single substitutional nitrogen concentration is less than 2×10atoms/cmas measured by electron paramagnetic resonance (EPR).26. A CVD single crystal diamond material ...

METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FOR CRYSTAL GROWTH

There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth. 1. A method for manufacturing a nitride crystal substrate , comprising:arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other;growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film;growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; andgrowing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.2. The ...

Epitaxial Quartz Homeotypes Crystal Growth On Beta Quartz For Pressure Sensors and Accelerometers

The purpose of quartz homeotypes grown epitaxially on beta quartz for use in pressure sensors or accelerometers is to be able to drastically cut down production costs on otherwise expensive or time-consuming to grow crystals that are necessary in various industrial applications. This is done via epitaxial growth of quartz homeotypes across the whole surface of a sample of beta quartz, an easily accessible and high temperature capable crystal. This invention also applies to the epitaxial application of piezoelectric material atop a piezoelectric crystal for the purpose of altering its piezoelectric coefficient and the epitaxial application of a piezoelectric crystal atop a host crystal for the purpose of increasing its insulation resistance. 1) A piezoelectric crystal in which a layer of a quartz homeotype is grown epitaxially on a sample of beta quartz.2) Same as claim 1 , wherein Gallium Orthophosphate is used as the quartz homeotype.3) Same as claim 1 , wherein Gallium Arsenate is used as the quartz homeotype.4) Same as claim 1 , wherein Barium Zinc Oxide is used as the quartz homeotype.5) Same as claim 1 , wherein Aluminum Phosphate is used as the quartz homeotype.6) Same as claim 1 , wherein the epitaxial layer is thin claim 1 , ranging between one nanometer and up to fifty micrometers7) Same as claim 1 , wherein the piezoelectric layer applied on the host crystal is thick claim 1 , ranging between fifty-one micrometers to one meter8) Same as claim 1 , wherein the epitaxial layer is grown via the hydrothermal crystal growth method.9) Same as claim 1 , wherein the epitaxial layer is grown via the flux crystal growth method.10) Same as claim 1 , wherein the epitaxial layer is grown via the vapor chemical deposition crystal growth method.11) A piezoelectric crystal with its piezoelectric coefficient ultimately altered by a layer of a different piezoelectric material.12) Same as claim 11 , wherein the piezoelectric layer covers the whole surface of the host crystal. ...

UNDERLYING SUBSTRATE, METHOD OF MANUFACTURING UNDERLYING SUBSTRATE, AND METHOD OF PRODUCING GROUP 13 NITRIDE CRYSTAL

An underlying substrate including a seed crystal layer of a group 13 nitride, wherein projections and recesses repeatedly appear in stripe shapes at a principal surface of the seed crystal layer, and the projections have a level difference of 0.3 to 40 μm and a width of 5 to 100 μm, and the recesses have a bottom thickness of 2 μm or more and a width of 50 to 500 μm. 1. An underlying substrate including a seed crystal layer of a group 13 nitride ,wherein projections and recesses repeatedly appear in stripe shapes at a principal surface of the seed crystal layer, andthe projections have a level difference of 0.3 to 40 μm and a width of 5 to 100 μm, and the recesses have a bottom thickness of 2 μm or more and a width of 50 to 500 μm.2. The underlying substrate according to claim 1 , wherein the level difference of the projections is 0.5 to 10 μm claim 1 , the width of the projections is 10 to 50 μm claim 1 , and the width of the recesses is 100 to 250 μm.3. The underlying substrate according to claim 1 , wherein edges of the projections are parallel to an a-plane of a group 13 nitride crystal.4. The underlying substrate according to claim 1 , wherein an off-angle of the seed crystal layer is 0.24 to 2.4° in a direction of an a-axis.5. The underlying substrate according to claim 4 , wherein the off-angle is 0.36 to 1.2° in the direction of the a-axis.6. The underlying substrate according to claim 1 , wherein the bottom thickness of the recesses is 2 to 40 μm.7. A method of manufacturing the underlying substrate according to claim 1 ,wherein the underlying substrate is obtained by epitaxially growing a group 13 nitride crystal into a film on a sapphire substrate with a gas-phase method, the group 13 nitride crystal constituting the seed crystal layer, and by patterning a principal surface of the seed crystal layer such that projections and recesses repeatedly appear in stripe shapes at the principal surface.8. A method of producing a group 13 nitride crystal claim 1 ,{' ...

Lead oxychloride, infrared nonlinear optical crystal, and preparation method thereof

An oxychloride infrared nonlinear optical crystal and the preparation method and use thereof, the optical crystal has a general chemical formula of Pb 2+x OCl 2+2x , therein 0<x<0.139 or 0.141<x<0.159 or 0.161<x≤0.6. The crystal is non-centrosymmetric, belongs to orthonormal system with space group of Fmm2, cell parameter is a=35.4963(14)±0.05 Å, b=5.8320(2)±0.05 Å, c=16.0912(6)±0.05 Å. The crystal is prepared by high temperature melt method or flux method. The crystal has a strong second harmonic generation efficiency of 4 times that of KDP (KH 2 PO 4 ) tested by Kurtz method, it is phase machable, transparent in the range of 0.34-7 μm. The laser damage threshold is 10 times that of the current commercial infrared nonlinear optical crystal AgGaS 2 . No crystalline water exists in lead oxychloride, and it is stable in the air and has good thermal stability.

ALUMINA SUBSTRATE

An alumina substrate wherein an AlN layer is formed on a surface of the alumina substrate and a rare earth elements-containing layer and/or rare earth elements-containing regions is/are formed in the interior of the AlN layer or in the interface between the AlN layer and the alumina substrate. 1. An alumina substrate wherein an AlN layer is formed on a surface of the alumina substrate and a rare earth elements-containing layer and/or rare earth elements-containing regions is/are formed in the interior of the AlN layer or in the interface between the AlN layer and the alumina substrate.2. The alumina substrate of claim 1 , wherein claim 1 , the content of the rare earth elements is 1-10000 ppm in the ratio relative to Al element.3. The alumina substrate of claim 1 , wherein claim 1 , the thickness of the AlN layer is 0.02 μm to 100 μm.4. The alumina substrate of claim 1 , wherein claim 1 ,the alumina substrate is sapphire.5. The alumina substrate of claim 4 , wherein claim 4 ,the AlN layer is mainly composed of single crystals.6. The alumina substrate of claim 2 , wherein claim 2 ,the thickness of the AlN layer is 0.02 μm to 100 μm.7. The alumina substrate of claim 2 , wherein claim 2 ,the alumina substrate is sapphire.8. The alumina substrate of claim 3 , wherein claim 3 ,the alumina substrate is sapphire.9. The alumina substrate of claim 6 , wherein claim 6 ,the alumina substrate is sapphire.10. The alumina substrate of claim 7 , wherein claim 7 ,the AlN layer is mainly composed of single crystals.11. The alumina substrate of claim 8 , wherein claim 8 ,the AlN layer is mainly composed of single crystals.12. The alumina substrate of claim 9 , wherein claim 9 ,the AlN layer is mainly composed of single crystals. The present invention related to an alumina substrate on the main surface of which an aluminum nitride layer is disposed.In the present invention, a substrate made by a-alumina (AlO) single crystal (hereinafter, it is called as sapphire) is called as sapphire ...

Method of Producing Crystals of Nitrides of Group 13 Elements and Melt Compositions

It is provided a method of producing a crystal of a nitride of a group 13 element in a melt by flux method. The melt is generated by heating a composition including a material for the group 13 element, a material for at least one of an alkali metal and an alkaline earth metal and a liquid material for germanium. Upon producing a crystal of a nitride of a group 13 element in a melt by flux method, it is thereby possible to reduce in-plane distribution of a property such as carrier density of the thus obtained crystal of a nitride of a group 13 element. 113. A method of producing a crystal of a nitride of a group element in a melt by flux method , the method comprising the step of:{'b': '13', 'heating a composition comprising a material for said group element, a material for at least one of an alkali metal and an alkaline earth metal and a liquid material for germanium to generate said melt.'}2. The method of claim 1 , wherein said material for germanium comprises a germanium tetrahalide.3. The method of claim 1 , wherein said material for germanium comprises an organic germanium compound.4. The method of claim 3 , wherein said organic germanium compound comprises a tetraalkoxy germanium.5. The method of claim 1 , wherein said composition further comprises a carbon source.613. The method of claim 1 , wherein said group element comprises at least one of gallium and aluminum.7. A melt composition for growing a nitride of a group 13 element in a melt by flux method claim 1 , said melt being generated by heating said composition claim 1 , said composition comprising:a material for said group 13 element;a material for at least one of an alkali metal and an alkaline earth metal; anda liquid material for germanium.8. The composition of claim 7 , wherein said material for germanium comprises a germanium tetrahalide.9. The composition of claim 7 , wherein said material for germanium comprises an organic germanium compound.10. The composition of claim 9 , wherein said organic ...

METHOD OF GROWTH OF LEAD ZIRCONATE TITANATE SINGLE CRYSTALS

Growth of single crystals of lead zirconate titanate (PZT) and other perovskites is accomplished by liquid phase epitaxy onto a substrate of suitable structural and lattice parameter match. A solvent and specific growth conditions for stable growth are required to achieve the desired proportions of Zr and Ti. 1. A method of growing a lead zirconate titanate (PZT) single crystal having room temperature PZT lattice parameters comprisinga=4.03±0.02 Å and c=4.15±0.02 Åor b=4.08±0.02 Å and b=a [{'sub': 2', '2', '3', '3, 'providing a substrate in a solution, wherein the substrate has a perovskite crystal structure and one or more periodic repeat distances in the plane of growth that are integer multiples of the PZT periodic repeat distances of the same crystal orientation to within 2%, and wherein the solution comprises a solvent and a solute, and wherein the solute comprises PZT or PZT precursors PbO, TiO, ZrO, PbZrO(PZ) and PbTiO(PT); and'}, 'growing the PZT single crystal from the solution onto the substrate using liquid phase epitaxy, wherein the temperature of the solution is held to within 25° C. of a constant growth temperature., 'using liquid phase epitaxy, comprising2. The method of claim 1 , wherein the solvent includes a compound selected from the group consisting of PbF claim 1 , LiF claim 1 , NaF claim 1 , KF claim 1 , NaAlF claim 1 , PbO claim 1 , Pb(PO) claim 1 , PbCl claim 1 , BO claim 1 , WO claim 1 , MoO claim 1 , VO claim 1 , PO claim 1 , PbWO claim 1 , PbMoO claim 1 , LiBO claim 1 , NaBO claim 1 , KBO claim 1 , and PbVO.3. The method of claim 1 , wherein the liquid phase epitaxy is performed at a temperature of 700-900° C.4. The method of claim 1 , wherein the substrate has at least one room temperature substrate lattice parameter in the range 4.05±0.04 Å or a multiple of 4.05±0.04 Å by 2 or √2.5. The method of claim 1 , wherein the solution comprises ZrOor PbZrO(PZ) and wherein the solubility of ZrOor PZ is higher than predicted by ideal solution ...

GaN Template Substrate

A device substrate in which no streaked morphological abnormality occurs is achieved. A GaN template substrate includes: a base substrate; and a first GaN layer epitaxially formed on the base substrate, wherein the first GaN layer has a compressive stress greater than or equal to 260 MPa that is intrinsic in an inplane direction, or a full width at half maximum of a peak representing E2 phonons of GaN near a wavenumber of 568 cmin a Raman spectrum is lower than or equal to 1.8 cm. With all of these requirements, a device substrate includes: a second GaN layer epitaxially formed on the first GaN layer; and a device layer epitaxially formed on the second GaN layer and made of a group 13 nitride. 1. A GaN template substrate , comprising:a base substrate made of sapphire;a buffer layer formed on said base substrate and made of GaN; anda first GaN layer epitaxially formed on said buffer layer,wherein said first GaN layer has a compressive stress greater than or equal to 260 MPa, the compressive stress being intrinsic in an inplane direction.2. A GaN template substrate , comprising:a base substrate made of sapphire; anda first GaN layer epitaxially formed on said base substrate,{'sup': −1', '−1, 'wherein a full width at half maximum of a peak near a wavenumber of 568 cmin a Raman spectrum is lower than or equal to 1.8 cm, the peak representing E2 phonons of GaN, the Raman spectrum being obtained by measuring said first GaN layer by Raman spectroscopy.'}3. A GaN template substrate , comprising:a base substrate made of sapphire;a buffer layer formed on said base substrate and made of GaN; anda first GaN layer epitaxially formed on said buffer layer,wherein said first GaN layer has a compressive stress greater than or equal to 260 MPa, the compressive stress being intrinsic in an inplane direction, and{'sup': −1', '−1, 'a full width at half maximum of a peak near a wavenumber of 568 cmin a Raman spectrum is lower than or equal to 1.8 cm, the peak representing E2 phonons of ...

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL, AND SEMICONDUCTOR DEVICE

The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer () as seed crystals for generation and growth of Group III nitride crystals (); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially coincide with each other, and in the crystal growth step, the plural Group III nitride crystals () grown from the plural seed crystals by the growth of the Group III nitride crystals () are bound. 1. A method for producing a Group III nitride crystal , comprising:a seed crystal selection step of selecting plural parts of previously-provided Group III nitride as seed crystals for generation and growth of Group III nitride crystals;a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt;a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow Group III nitride crystals, whereinthe seed crystals are hexagonal crystals,in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not almost coincide with each other, andin ...

Method for Crystallizing Group IV Semiconductor, and Film Forming Apparatus

A method for crystallizing a group IV semiconductor to form group IV semiconductor crystals on a process surface of a workpiece on which a process is performed, includes forming an additive-containing group IV semiconductor film on the process surface of the workpiece by supplying a group IV semiconductor precursor gas serving as a precursor of the group IV semiconductor and an additive gas which lowers a melting point of the group IV semiconductor and which includes an additive whose segregation coefficient is smaller than “1”, liquefying the additive-containing group IV semiconductor film, and solidifying the liquefied additive-containing group IV semiconductor film from the side of the process surface of the workpiece to form the group IV semiconductor crystals. 1. A method for crystallizing a group IV semiconductor to form group IV semiconductor crystals on a process surface of a workpiece on which a process is performed , the method comprising:forming an additive-containing group IV semiconductor film on the process surface of the workpiece by supplying a group IV semiconductor precursor gas serving as a precursor of the group IV semiconductor and an additive gas which lowers a melting point of the group IV semiconductor and which includes an additive whose segregation coefficient is smaller than “1”;liquefying the additive-containing group IV semiconductor film; andsolidifying the liquefied additive-containing group IV semiconductor film from the side of the process surface of the workpiece to form the group IV semiconductor crystals.2. The method of claim 1 , wherein the process surface includes the same crystals of the group IV semiconductor as the group IV semiconductor included in the group IV semiconductor precursor gas.3. The method of claim 1 , wherein liquefying the additive-containing group IV semiconductor film includes applying heat equal to the melting point of the additive-containing group IV semiconductor film or more and less than a melting ...

Group 13 element nitride layer, free-standing substrate and functional element

A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of a crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. A normal line to the upper surface has an off-angle of 2.0° or less with respect to <0001> direction of the crystal of the nitride of the group 13 element.

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD FOR EPITAXIAL SUBSTRATES FOR SEMICONDUCTOR ELEMENTS

Provided is an epitaxial substrate for semiconductor elements which suppresses an occurrence of current collapse. The epitaxial substrate for the semiconductor elements includes: a semi-insulating free-standing substrate formed of GaN being doped with Zn; a buffer layer being adjacent to the free-standing substrate; a channel layer being adjacent to the buffer layer; and a barrier layer being provided on an opposite side of the buffer layer with the channel layer therebetween, wherein the buffer layer is a diffusion suppressing layer that suppresses diffusion of Zn from the free-standing substrate into the channel layer. 1. An epitaxial substrate for semiconductor elements , comprising:a semi-insulating free-standing substrate formed of GaN being doped with Zn;{'sup': 18', '−3, 'a buffer layer being adjacent to said free-standing substrate and being a group 13 nitride layer that is doped with C at a concentration equal to or higher than 1×10cmin at least part of said buffer layer in a thickness direction;'}a channel layer being adjacent to said buffer layer; anda barrier layer being provided on an opposite side of said buffer layer with said channel layer therebetween, whereinsaid buffer layer is a diffusion suppressing layer that suppresses diffusion of Zn from said free-standing substrate into said channel layer, and{'sup': 18', '−3, 'a concentration of Zn in said channel layer is equal to or lower than 1×10cm.'}2. The epitaxial substrate for the semiconductor elements according to claim 1 , whereinsaid group 13 nitride layer is a GaN layer.3. The epitaxial substrate for the semiconductor elements according to claim 1 , whereinsaid group 13 nitride layer is either of{'sup': 18', '−3, 'a multi-layered buffer layer, which is formed by laminating two or more group 13 nitride layers having different compositions, at least one of said two or more group 13 nitride layers being doped with C at a concentration of 1×10cmor more, or'}a composition gradient buffer layer ...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD FOR EPITAXIAL SUBSTRATES FOR SEMICONDUCTOR ELEMENTS

Provided is an epitaxial substrate for semiconductor elements which suppresses an occurrence of current collapse. The epitaxial substrate for the semiconductor elements includes: a semi-insulating free-standing substrate formed of GaN being doped with Zn; a buffer layer being adjacent to the free-standing substrate; a channel layer being adjacent to the buffer layer; and a barrier layer being provided on an opposite side of the buffer layer with the channel layer therebetween, wherein the buffer layer is a diffusion suppressing layer formed of Al-doped GaN and suppresses diffusion of Zn from the free-standing substrate into the channel layer. 1. An epitaxial substrate for semiconductor elements , comprising:{'sup': 7', '−2, 'a semi-insulating free-standing substrate whose dislocation density is equal to or lower than 5.0×10cm, formed of GaN being doped with Zn;'}{'sup': 18', '−3', '21', '−3, 'a buffer layer being adjacent to said free-standing substrate and having a thickness of 20 nm to 200 nm and Al concentration of 5×10cmto 1×10cm;'}{'sup': 16', '−3, 'a channel layer being adjacent to said buffer layer and having concentration of Zn equal to or lower than 1×10cm; and'}a barrier layer being provided on an opposite side of said buffer layer with said channel layer therebetween, whereinsaid buffer layer is a diffusion suppressing layer formed of Al-doped GaN and suppresses diffusion of Zn from said free-standing substrate into said channel layer.2. The epitaxial substrate for the semiconductor elements according to claim 1 , whereinsaid channel layer is formed of GaN, and said barrier layer is formed of AlGaN.3. A semiconductor element claim 1 , comprising:{'sup': 7', '−2, 'a semi-insulating free-standing substrate whose dislocation density is equal to or lower than 5.0×10cm, formed of GaN being doped with Zn;'}{'sup': 18', '−3', '21', '−3, 'a buffer layer being adjacent to said free-standing substrate and having a thickness of 20 nm to 200 nm and Al concentration ...

METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition. 120-. (canceled)21. A method of forming a GaN single crystal in a chamber having a first region having a first end and a second region having a second end , said method comprising:Disposing a nucleation center in said first region and a GaN source material in said second region;pressurizing the chamber;establishing a first temperature distribution in said chamber in which a first temperature gradient exists between a first temperature at said first end and a second temperature at said second end; andestablishing a second temperature distribution in said chamber in which a second temperature gradient exists between a third temperate at said first end and a fourth temperature said second end, said third temperature being sufficient to supersaturate a GaN solvent and cause growth of at least one GaN single crystal in said first region, and said fourth temperature being sufficient to cause etching of said GaN source material in said second region,wherein either (1) said first temperature gradient is opposite in sign to said second temperature gradient; or (2) said second temperature gradient has the same sign but is larger in magnitude than said first temperature gradient and said second temperature gradient is sufficient to cause said GaN crystal growth in said first region.22. The method of forming a GaN single crystal of claim 21 , wherein the second temperature gradient is opposite in sign than the first temperature gradient.23. The method of forming a GaN ...

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND RAMO4-CONTAINING SUBSTRATE

A method for producing a Group III nitride crystal includes: preparing a protective layer on a region except for an epitaxial growth surface of an RAMOsubstrate containing a single crystal represented by the general formula RAMO(wherein R represents one or a plurality of a trivaient element selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of a trivalent element selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of a divalent element selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd); and forming a Group III nitride crystal on the epitaxial growth surface of the RAMOsubstrate by a flux method. 1. A method for producing a Group III nitride crystal , comprising:{'sub': 4', '4', '4', '4, 'preparing an RAMO-containing substrate having an RAMOsubstrate containing a single crystal represented by the general formula RAMO(wherein R represents one or a plurality of a trivalent element selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of a trivalent element selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of a divalent element selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), and a protective layer disposed on a region except for an epitaxial growth surface of the RAMOsubstrate; and'}{'sub': '4', 'forming a Group III nitride crystal on the epitaxial growth surface of the RAMOsubstrate by a flux method.'}2. The method for producing a Group III nitride crystal according to claim 1 , wherein{'sub': 4', '4, 'the preparing the RAMO-containing substrate further comprises preparing a seed crystal layer containing a Group III nitride on the epitaxial growth surface of the RAMOsubstrate, and'}the forming the Group III nitride crystal comprises forming the Group III nitride crystal on the seed ...

Wide Band Gap Semiconductor Wafers Grown and processed in a Microgravity Environment and Method of Production

Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.

Method for Separating Group 13 Element Nitride Layer, and Composite Substrate

A composite substrate includes a sapphire substrate and a layer of a nitride of a group 13 element provided on the sapphire substrate. The layer of the nitride of the group 13 element is composed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies the following formulas (1), (2) and (3). A laser light is irradiated to the composite substrate from the side of the sapphire substrate to decompose crystal lattice structure at an interface between the sapphire substrate and the layer of the nitride of the group 13 element. 5.0≦(an average thickness (μm) of the layer of the nitride of the group 13 element/a diameter (mm) of the sapphire substrate)≦10.0 . . . (1); 0.1≦ a warpage (mm) of said composite substrate×(50/a diameter (mm) of said composite substrate)0.6 . . . (2); 1.10≦a maximum value (μm) of a thickness of said layer of said nitride of said group 13 element/a minimum value (μm) of said thickness of said layer of said nitride of said group 13 element . . . (3) 1. A method of separating a layer of a nitride of a group 13 element: the method comprising the steps of;preparing a composite substrate comprising a sapphire substrate and said layer of said nitride of said group 13 element provided on said sapphire substrate, said layer of said nitride of said group 13 element comprising gallium nitride, aluminum nitride or gallium aluminum nitride, and said composite substrate satisfying the following formulas (1), (2) and (3); and [{'br': None, '5.0≦(an average thickness (μm) of said layer of said nitride of said group 13 element/a diameter (mm) of said sapphire substrate)≦10.0 \u2003\u2003(1)'}, {'br': None, 'sup': '2', '0.1≦a warpage (mm) of said composite substrate×(50/a diameter (mm) of said composite substrate)≦0.6 \u2003\u2003(2)'}, {'br': None, '1.10≦a maximum value (μm) of a thickness of said layer of said nitride of said group 13 element/a minimum value (μm) of said thickness of said layer of said nitride of said ...

Group 13 Element Nitride Crystal Substrate and Function Element

A crystal substrate is composed of a crystal of a nitride of a group 13 element and has a first main face and a second main face. The crystal substrate includes a low carrier concentration region and a high carrier concentration region both extending between the first main face and second main face. The low carrier concentration region has a carrier concentration of 10/cmor lower and a defect density of 10/cmor lower. The high carrier concentration region has a carrier concentration of 10/cmor higher and a defect density of 10/cmor higher. 1. A crystal substrate comprising a crystal of a nitride of a group 13 element and having a first main face and a second main face:wherein said crystal substrate comprises a low carrier concentration region and a high carrier concentration region both extending between said first main face and said second main face;{'sup': 18', '3, 'wherein said low carrier concentration region has a carrier concentration of 10/cmor lower;'}{'sup': 7', '2, 'wherein said low carrier concentration region has a defect density of 10/cmor lower;'}{'sup': 19', '3, 'wherein said high carrier concentration region has a carrier concentration of 10/cmor higher;'}{'sup': 8', '2, 'wherein said high carrier concentration region has a defect density of 10/cmor higher; and'}wherein said low carrier concentration region and said high carrier concentration region are alternately provided and adjacent to each other.2. The crystal substrate of claim 1 , wherein said crystal substrate has a thickness of 250 μm or larger and 450 μm or smaller.3. The crystal substrate of claim 1 , wherein said crystal of said nitride of said group 13 element comprises a crystal emitting fluorescence having a peak in a wavelength range of 440 to 470 nm or 540 to 580 nm when a light having a wavelength of 330 to 385 nm is irradiated to said crystal.4. The crystal substrate of claim 1 , wherein said first main face of said crystal substrate is a polished surface.5. The crystal substrate ...

Group 13 Element Nitride Crystal Layer and Function Element

A crystal layer of a nitride of a group 13 element includes a pair of main surfaces. The crystal layer includes high carrier concentration regions having a carrier concentration of 1×10/cmor more and low carrier concentration regions having a carrier concentration of 9×10/cmor less, viewed in a cross section perpendicular to the main surfaces of the crystal layer. Each of the low carrier concentration regions is extended in an elongated shape. The low carrier concentration regions include association parts. The low carrier concentration regions are extended continuously between the pair of the main surfaces.

GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL

A Group III nitride substrate contains a base material part of a Group III nitride having a front surface and a back surface, the front surface of the base material part and the back surface of the base material part having different Mg concentrations from each other. 1. A Group III nitride substrate comprising:a base material part including a Group III nitride and having a front surface and a back surface,wherein the front surface of the base material part and the back surface of the base material part have different Mg concentrations.2. The Group III nitride substrate according to claim 1 , wherein the front surface of the base material part is a surface claim 1 , on which a Group III nitrate crystal is to be grown claim 1 , and the Mg concentration of the front surface is lower than the Mg concentration of the back surface.3. The Group III nitride substrate according to claim 2 , wherein the front surface of the base material part is a +C plane claim 2 , and the back surface is −C plane.4. The Group III nitride substrate according to claim 1 , wherein the Mg concentration of the front surface of the base material part is 5×10(atoms/cm) or less claim 1 , and{'sup': 17', '3, 'the Mg concentration of the back surface of the base material part exceeds 5×10(atoms/cm).'}5. The Group III nitride substrate according to claim 4 , wherein the Mg concentration of the front surface of the base material part is in a range from 1×10to 2×10(atoms/cm) claim 4 , inclusive claim 4 , and{'sup': 17', '18', '3, 'the Mg concentration of the back surface of the base material part is in a range from 8×10to 1×10(atoms/cm), inclusive.'}6. The Group III nitride substrate according to claim 1 , wherein an Mg concentration of a center in a thickness direction of the base material part is from 4×10to 5×10(atoms/cm).7. The Group III nitride substrate according to claim 1 , wherein an Mg concentration in the base material part is gradually changed in a thickness direction of the base material ...

METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal. 1. A method of manufacturing a group-III nitride crystal comprising:a seed crystal preparation step of preparing a plurality of dot-shaped group-Ill nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; anda crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal, a nucleation step of forming crystal nuclei from the plurality of seed crystals;', 'a pyramid growth step of growing a plurality of pyramid-shaped first group-III nitride crystals from the plurality of crystal nuclei; and', 'a lateral growth step of growing second group-Ill nitride crystals so that gaps of the plurality of pyramid-shaped first group-III nitride crystals are filled to form a flattened surface., 'wherein the crystal growth step comprises2. The method of manufacturing a group-III nitride crystal according to claim 1 , wherein the nucleation step is performed at 874° C. or less.3. The method of manufacturing a group-III nitride crystal according to claim 1 , wherein at the nucleation step claim 1 , the plurality of seed crystals are immersed in the melt within 5 minutes to 10 hours.4. The ...

Seed Crystal Substrates, Composite Substrates and Functional Devices

A seed crystal substrate 8 includes a base body 1 and a plurality of rows of stripe-shaped seed crystal layers 3 formed on the base body 1 . An upper face 3 a of the seed crystal layer 3 is (11-22) plane, a groove 4 is formed between the adjacent seed crystal layers 3 , and a longitudinal direction of the groove 4 is a direction in which a c-axis of a crystal forming the seed crystal layer is projected on the upper face. A nitride of a group 13 element is formed on the seed crystal substrate.

PRODUCTION METHOD FOR GROUP III NITRIDE CRYSTAL

A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals. 1. A production method for a group III nitride crystal , the production method comprising:preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate; andgrowing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, on the basis of the plurality of seed crystals; and', 'growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals., 'wherein the step of growing a group III nitride crystal comprises2. The production method for a group III nitride crystal according to claim 1 , wherein at the step of growing second group III nitride crystals claim 1 , a plurality of group III nitride crystal layers are formed on an inclined surface of ...

Semiconductor substrate, gallium nitride single crystal, and method for producing gallium nitride single crystal

There is provided a semiconductor substrate including: a sapphire substrate; an intermediate layer formed of gallium nitride with random crystal directions and provided on the sapphire substrate; and at least one or more semiconductor layers each of which is formed of a gallium nitride single crystal and that are provided on the intermediate layer.

COMPOSITE SUBSTRATE FOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREFOR

Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate. 1. A composite substrate for light emitting devices , comprising:a substrate composed of an oriented polycrystalline alumina sintered body;a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate; andoptionally, a buffer layer between the light emitting functional layer and the oriented polycrystalline alumina sintered body substrate, wherein the semiconductor single crystal grains constituting a top surface of the light emitting functional layer connect to a bottom surface of the light emitting functional layer facing toward the oriented polycrystalline alumina sintered body substrate and/or a bottom surface of the buffer layer facing toward the oriented polycrystalline alumina sintered body substrate, without intervention of a grain boundary,wherein at least one layer selected from (i) a lower layer among the layers constituting the light emitting functional layer, wherein the lower layer is located in a position that is closer to the oriented polycrystalline alumina sintered body substrate than an interface or a layer that actually emits light, and (ii) the buffer layer, is a grain diameter increasing layer, in which the semiconductor crystal grains constituting the at least one layer increase in cross-sectional average diameter from a side closer ...

Preparation method and application of sodium barium fluoroborate birefringent crystal

A preparation method and application of a Na 3 Ba 2 (B 3 O 6 ) 2 F birefringent crystal, the crystal having a chemical formula of Na 3 Ba 2 (B 3 O 6 ) 2 F, and belonging to a hexagonal crystal system, the space group being P6 3 /m, and the lattice parameters comprising a=7.3490(6) Å, c=12.6340(2) Å, V=590.93(12) Å 3 , Z=2; the crystal is used for an infrared/deep ultraviolet waveband, and is an uniaxial negative crystal, n e <n o , the transmission range being 175-3,350 nm, the birefringence of 0.090 (3,350 nm)-0.240 (175 nm), and the crystal being grown by employing a melting method or a flux method; the crystal prepared via the method has a short growth cycle, high crystal quality and large crystal size, is easy to grow, cut, polish and store, is stable in the air, and difficult to deliquesce, and can be used for preparation of various polarization beam polarization beam splitter prism and infrared/deep ultraviolet waveband optical communication elements.

NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME

A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation. 19-. (canceled)10. A method for producing a nitride crystal , the method comprising:(a) forming a mixed molten liquid of an alkali metal and a substance including at least a Group III element in a reaction vessel;(b) installing a seed crystal inside the reaction vessel;(c) growing a Group III nitride crystal in the mixed molten liquid and the nitrogen dissolved into the mixed molten liquid, from the seed crystal, by bringing a gas containing nitrogen into contact with the mixed molten liquid and by dissolving the nitrogen in the gas into the mixed molten liquid;(d) fluctuating a condition for crystal growth; and(e) forming a first partial region and a second partial region within the nitride crystal.11. The method for producing a nitride crystal according to claim 10 ,wherein (d) comprisesfluctuating the nitrogen partial pressure in the gas during the crystal growth of the nitride crystal so as to form the first partial region and the second partial region.12. The method for producing a nitride crystal according to claim 10 ,wherein (d) comprisesfluctuating the temperature of the mixed molten liquid during the crystal growth of the nitride crystal so as to form the first partial region and the second partial region.13. The method for producing a nitride crystal according to claim 11 ,wherein the fluctuating the nitrogen partial pressure is carried out immediately before a termination of the growing the nitride crystal.14. The method for producing a nitride crystal according to claim 12 ,wherein the fluctuating the temperature of the mixed molten liquid is carried out immediately before a termination of the growing the nitride crystal.15. The ...

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

The present invention suppresses anomalous growth of a Group III nitride semiconductor at the periphery of a seed substrate. The invention is directed to a method for producing a Group III nitride semiconductor including feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate. The oxygen concentration of the furnace internal atmosphere is elevated after the growth initiation temperature of the Group III nitride semiconductor has been achieved. In a period from the initiation of the growth to a certain timing, the oxygen concentration of the furnace internal atmosphere is controlled to 0.02 ppm or less, and thereafter, to greater than 0.02 ppm and 0.1 ppm or less. 1. A method for producing a Group III nitride semiconductor comprising feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace , to thereby grow a Group III nitride semiconductor on a seed substrate , wherein the oxygen concentration of the furnace internal atmosphere is elevated after the growth initiation temperature of the Group III nitride semiconductor has been achieved.2. The Group III nitride semiconductor production method according to claim 1 , wherein the oxygen concentration of the furnace internal atmosphere before achieving the growth initiation temperature is controlled to 0.02 ppm or less.3. The Group III nitride semiconductor production method according to claim 1 , wherein claim 1 , in a period from the initiation of the growth of the Group III nitride semiconductor to a certain timing claim 1 , the oxygen concentration of the furnace internal atmosphere is controlled to 0.02 ppm or less and thereafter claim 1 , to greater than 0.02 ppm and 0.1 ppm or less.4. The Group III nitride semiconductor production method according to claim 3 , wherein the period is adjusted to 5 to 15 hours after the initiation of the growth of ...

METHOD OF LIQUID-PHASE EPITAXIAL GROWTH OF LEAD ZIRCONATE TITANATE SINGLE CRYSTALS

Growth of single crystals of lead zirconate titanate (PZT) and other perovskites is accomplished by liquid phase epitaxy onto a substrate of suitable structural and lattice parameter match. A solvent and specific growth conditions for stable growth are required to achieve the desired proportions of Zr and Ti. 1. A lead zirconate titanate (PZT) single crystal having room temperature PZT lattice parameters comprising a=4.03±0.02 Å , c=4.15±0.02 Å , and b=4.03±0.02 Å , formed by a method comprising:{'sub': 2', '2', '3', '3, 'providing a substrate in a solution, wherein the substrate has a perovskite crystal structure and one or more periodic repeat distances in the plane of growth that are integer multiples of the PZT periodic repeat distances of the same crystal orientation to within 2%, and wherein the solution comprises a solvent and a solute, and wherein the solute comprises PZT or PZT precursors PbO, TiO, ZrO, PbZrO(PZ) and PbTiO(PT); and'}growing the PZT single crystal from the solution onto the substrate using liquid phase epitaxy, wherein the temperature of the solution is held to within 25° C. of a constant growth temperature;wherein the liquid phase epitaxy is performed at a temperature of greater than 700° C.2. The PZT single crystal of claim 1 , wherein the solvent includes a compound selected from the group consisting of PbF claim 1 , LiF claim 1 , NaF claim 1 , KF claim 1 , NaAlF claim 1 , PbO claim 1 , Pb(PO) claim 1 , PbCl claim 1 , BO claim 1 , WO claim 1 , MoO claim 1 , VO claim 1 , PO claim 1 , PbWO claim 1 , PbMoO claim 1 , LiBO claim 1 , NaBO claim 1 , KBO claim 1 , and PbVO.3. The PZT single crystal of claim 1 , wherein the PZT single crystal is of the monoclinic structure.4. The PZT single crystal of claim 1 , wherein at least a portion of the PZT single crystal is in an unstable morphotropic phase boundary region and comprises a mixture of ferroelectric domains comprising one or more of the tetragonal claim 1 , monoclinic claim 1 , rhombohedral ...

METHOD OF MANUFACTURING A GARNET TYPE CRYSTAL

Provided are a practical method for manufacturing TAG single crystal. The method of manufacturing a garnet type crystal brings a raw material solution into contact with a substrate formed of a YAlOcrystal or a DyAlOcrystal and performs liquid phase epitaxial growth. The garnet type crystal is represented by (TbRBi) AlO(R is one or more elements selected from Y or a lanthanoid (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu), ≤x, and ≤y)). 1. A method of manufacturing a garnet type crystal represented by (TbRBi)AlO(R is one or more elements selected from Y or a lanthanoid (La , Ce , Pr , Nd , Pm , Sm , Eu , Gd , Tb , Dy , Ho , Er , Tm , Yb , or Lu) , 0≤x , and 0≤y)) , comprising bringing a raw material solution into contact with a substrate formed of a YAlOcrystal or a DyAlOcrystal and performing liquid phase epitaxial growth.2. The method of manufacturing a garnet type crystal according to claim 1 , wherein TbOand AlOare dissolved in the raw material solution at ratios of from 1.0 to 5.0 mol % and from 30.0 to 40.0 mol % claim 1 , respectively.3. The method of manufacturing a garnet type crystal according to claim 1 , wherein an Al element is present in the raw material solution in an amount to be from 3.0 to 20.0 times an amount of a Tb element.4. The method of manufacturing a garnet type crystal according to claim 1 , wherein a raw material solution is brought into contact with a substrate formed of a DyAlO(crystal and liquid phase epitaxial growth is performed. This non-provisional application claims priority under 35 U.S.C. § 119(a) from Japanese Patent Application No. 2018-074724, filed on Apr. 9, 2018, the entire contents of which are incorporated herein by reference.The present invention relates to a Faraday rotator, an optical isolator using the same, a manufacturing method of a garnet type crystal to be used in a Faraday rotator or the like.In the opto-processing technology or the opto-measuring technology using laser light, the laser ...

Method for manufacturing group 13 nitride crystal and group 13 nitride crystal

In a method for manufacturing a group 13 nitride crystal, a seed crystal made of a group 13 nitride crystal is arranged in a mixed melt containing an alkali metal and a group 13 element, and nitrogen is supplied to the mixed melt to grow the group 13 nitride crystal on a principal plane of the seed crystal. The seed crystal is manufactured by vapor phase epitaxy. At least a part of contact members coming into contact with the mixed melt in a reaction vessel accommodating the mixed melt is made of Al 2 O 3 . An interface layer having a photoluminescence emission peak whose wavelength is longer than the wavelength of a photoluminescence emission peak of the grown group 13 nitride crystal is formed between the seed crystal and the grown group nitride crystal.

METHOD FOR PRODUCING N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, AND CRYSTAL SUBSTRATE

A method of producing an n-type group III nitride single crystal includes putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel; melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal, which is doped with oxygen as a donor, from the group III element, the nitrogen, and oxygen in the boron oxide that are dissolved in the mixed melt. 16-. (canceled)7. An n-type group III nitride single crystal that is doped with oxygen to a concentration of 10cmor more and doped with boron to a concentration of 10cmor more.8. The n-type group III nitride single crystal according to claim 7 , wherein the oxygen concentration of the n-type group III nitride single crystal is 10cmor more.9. The n-type group III nitride single crystal according to claim 7 , wherein the boron concentration of the n-type group III nitride single crystal is 10cmor more.10. A crystal substrate comprising an n-type group III nitride single crystal that is doped with oxygen to a concentration of 10cmor more and doped with boron to a concentration of 10cmor more.11. The crystal substrate according to claim 10 , wherein the oxygen concentration of the n-type group III nitride single crystal is 10cmor more.12. The crystal substrate according to claim 10 , wherein the boron concentration of the n-type group III nitride single crystal is 10cmor more. The present application claims priority to and incorporates by reference the entire contents of Japanese Patent Application No. 2010-194552 filed in Japan on Aug. 31, 2010 and ...

Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same

A free-standing substrate of a polycrystalline nitride of a group 13 element contains a plurality of monocrystalline particles having a particular crystal orientation in approximately a normal direction. The polycrystalline nitride of the group 13 element is composed of gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof. The free-standing substrate has a top surface and bottom surface. The free-standing substrate contains at least one of zinc and calcium. A root mean square roughness Rms at the top surface is 3.0 nm or less.

Method of producing substrates including gallium nitride

A method of producing a functional device has an etched gallium nitride layer and a functional layer having a nitride of a group 13 element. The method includes providing a body comprising a surface gallium nitride layer, performing a dry etching treatment of a surface of the surface gallium nitride layer to provide the etched gallium nitride layer using a plasma etching system comprising an inductively coupled plasma generating system, introducing an etchant during the dry etching treatment, the etchant consisting essentially of a fluorine-based gas, and forming the functional layer on a surface of the etched gallium nitride layer.

包含氮化镓层的基板及其制造方法

对于具有氮化镓层的基板，降低了氮化镓层在表面处理后的表面损伤，并改善了基板上形成的功能元件的品质。本发明提供一种至少具有氮化镓层的基板4。使用具备电感耦合式等离子体发生装置的等离子体刻蚀装置，使标准化直流偏置电位为?10V/cm 2 以上，引入氟系气体，对氮化镓层3的表面3a进行干法刻蚀处理。

シリコン結晶の液相成長方法及びそれを用いた太陽電池の製造方法

(57)【要約】 【課題】 液相成長方法によって、結晶性が良好でドー パント濃度がよく制御された薄膜結晶シリコンを成長す る方法を提供し、もって高性能で低コストな太陽電池 や、高コントラストで色むらの無い画像表示装置の量産 に寄与すること。 【解決手段】 カーボンのボートや石英の坩堝(301)の 内部で、溶融したインジウムに、ホウ素、又はアルミニ ウム、又はリン、又は砒素を所定濃度含むシリコンの固 体(310)を溶かしてメルト(302)を調整し、このメルトを 過飽和として、メルトに浸漬した基板に、ドーパント元 素を含む結晶シリコンを成長させる。

복합 기판, 그 제조 방법, 13족 원소 질화물로 이루어진 기능층의 제조 방법 및 기능 소자

본 발명의 복합 기판(10)은, 사파이어 기판(1A), 사파이어 기판의 표면에 형성된 질화갈륨 결정으로 이루어진 종결정막(4) 및 이 종결정막(4) 상에 결정 성장시킨 두께 200 ㎛ 이하의 질화갈륨 결정층(7)을 포함한다. 사파이어 기판(1A)과 종결정막(4)의 계면에는 보이드(3)가 형성되어 있고, 이 보이드 비율은 4.5%∼12.5%이다.

Crystal growth method, semiconductor device and manufacturing method therefor

(57)【要約】 【課題】 多孔質シリコン（Ｓｉ）層上に、異常成長を させることなく、多孔質Ｓｉ層を覆い尽くす結晶Ｓｉ層 をエピタキシャル成長させる方法を提供する。 【解決手段】 多孔質Ｓｉ層を表面に有する基板上に、 結晶Ｓｉ層をエピタキシャル成長させる。液相成長でエ ピタキシャル成長させる場合、メルトに予め、Ｓｉ原料 を高温で溶かし込んでおいて、その後、成長させるＳｉ 基板をメルトに浸す。そして、徐々に温度を下げること によって、メルトから析出したＳｉがＳｉ基板上にエピ タキシャル成長する。このとき、Ｓｉ基板として、（１ １１）面を主面にした基板を使用する。

Group 13 element nitride film and laminate thereof

在晶种基板（11）上，通过助熔剂法由含有助熔剂及13族元素的熔液，于含氮氛围下育成13族元素氮化物（3）。13族元素氮化物膜（3）含有夹杂物分布层（3a）和夹杂物缺乏层（3b），所述夹杂物分布层（3a）被设置于自晶种基板（11）侧的界面起50μm以下的区域，且分布有源自熔液的构成成分的夹杂物，所述夹杂物缺乏层（3b）被设置于该夹杂物分布层（3a）上。

Magnetic garnet single crystal, optical device using same and method for producing single crystal

本发明涉及通过液相外延(LPE)法生长的磁性石榴石单晶及使用该磁性石榴石单晶的光学元件及单晶的制造方法，其目的在于提供降低了铅含量的磁性石榴石单晶及使用该磁性石榴石单晶的光学元件及单晶的制造方法。本发明涉及一种通过液相外延生长法生长得到的用化学式Bi x Na y Pb z M1 3-x-y-z Fe 5-w M2 w O 12 表示的磁性石榴石单晶(式中的M1表示从Y、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中选出的至少1种以上元素，M2表示从Ga、Al、In、Ti、Ge、Si、Pt中选出的至少1种以上元素，0.5＜x≤2.0、0＜y≤0.8、0≤z＜0.01、0.19≤3-x-y-z＜2.5、0≤w≤1.6)。

Method for manufacturing group III nitride crystal substrate

Method of making a gallium nitride crystalline composition having a low dislocation density

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm −1 , with an absorbance per unit thickness of greater than about 0.01 cm −1 . In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×10 18 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Method of growing group III nitride crystals

This disclosure pertains to a process for making single crystal Group III nitride, particularly gallium nitride, at low pressure and temperature, in the region of the phase diagram of Group III nitride where Group III nitride is thermodynamically stable comprises a charge in the reaction vessel of (a) Group III nitride material as a source, (b) a barrier of solvent interposed between said source of Group III nitride and the deposition site, the solvent being prepared from the lithium nitride (Li 3 N) combined with barium fluoride (BaF 2 ), or lithium nitride combined with barium fluoride and lithium fluoride (LiF) composition, heating the solvent to render it molten, dissolution of the source of GaN material in the molten solvent and following precipitation of GaN single crystals either self seeded or on the seed, maintaining conditions and then precipitating out.

Method for producing group III element nitride crystal and group III element nitride crystal

Group III nitride crystal substrate for light emitting device, light emitting device and method for producing the same

Method for surfactant crystal growth of a metal-nonmetal compound

Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to contact with the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.

Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

The manufacture method of group III nitride semiconductor crystalline substrates

本发明提供第III族氮化物半导体晶体衬底的制造方法，其中，将利用液相生长法生长而成的第III族氮化物单晶作为晶种衬底，利用气相生长法使第III族氮化物单晶在所述晶种衬底的主面上进行同质外延生长，所述晶种衬底的主面为+C面，在所述晶种衬底面内的整个区域中，所述晶种衬底的主面附近处的晶体中的氧原子浓度为1×10 17 cm ‑3 以下。

Nitride crystal and method for producing the same

본 발명은 종결정의 외주를 둘러싸는 질화물 결정을 제공하며, 본 실시예의 질화물 결정은, 제1 부분 영역과, 광학적 특성이 제1 부분 영역과 상이하고 결정 방위를 나타내는 광학적 특성을 갖는 제2 부분 영역을 구비한다. The present invention provides a nitride crystal surrounding the outer circumference of the seed crystal, wherein the nitride crystal of the present embodiment has a first partial region and a second partial region having optical characteristics different from the first partial region and exhibiting crystal orientations. It is provided.

Method of solid-phase flux epitaxy growth

본 발명은, 벌크 결정에 필적하는 결정 완전성을 가진 박막을 제조할 수 있으며, 제조 원가가 낮은 고상 플럭스 에피택시 성장법으로서, 기판상에 에피택시 성장하는 물질, 즉 목적 물질과, 이 목적 물질과의 사이에서 공정(共晶)을 형성하며, 또한 화합물을 형성하지 않는 물질로 이루어진 플럭스가 혼합된 비정질 박막을 공정점 온도 미만의 저온에서 퇴적시키고, 상기 기판을 목적 물질과 플럭스의 공정점 온도에서 열처리한다. 고상 반응, 즉 고상 확산에 의해 목적 물질과 플럭스가 혼합되고, 공정 상태의 액상이 형성되어, 이 액상으로부터 목적 물질이 석출되어 기판상에 에피택시 성장된다. The present invention is a solid-phase flux epitaxy growth method capable of producing a thin film having crystal integrity comparable to bulk crystals, and having a low manufacturing cost, comprising: a material epitaxy grown on a substrate, that is, a target material, An amorphous thin film containing a flux formed of a material which forms a process between and which does not form a compound is deposited at a low temperature below the process point temperature, and the substrate is formed at the process point temperature of the target material and the flux. Heat treatment. By the solid phase reaction, that is, solid phase diffusion, the target substance and the flux are mixed, a liquid phase in a process state is formed, and the target substance is precipitated from this liquid phase and grown epitaxially on the substrate. 플럭스, 에피택시, 단결정, 박막, 고상, 메모리 Flux, epitaxy, single crystal, thin film, solid state, memory

Method for manufacturing garnet-type crystals

Method for producing compound single crystal and production apparatus for use therein

The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.

Low temperature method of preparing GaN single crystals

A low temperature method for preparing GaN single crystals for use, for example, for blue light emitting diodes and laser diodes, comprises using sodium as a flux in a reaction system containing only gallium, sodium and nitrogen, e.g., by thermally decomposing sodium azide in a closed reaction zone containing gallium or by reacting gallium with nitrogen supplied from a tank in a closed reaction zone containing sodium, optionally in the presence of a catalytic amount of an alkaline earth metal.

GaN TEMPLATE SUBSTRATE AND DEVICE SUBSTRATE

줄무늬의 모폴로지 이상이 생기지 않는 디바이스 기판을 실현한다. GaN 템플릿 기판이, 하지 기판과, 하지 기판의 위에 에피택셜 형성된 제1 GaN층을 구비하고, 제1 GaN층의 면내 방향에 내재된 압축 응력이 260 MPa 이상, 또는, 라만 스펙트럼에 있어서의 파수 568 cm -1 근방에서의 GaN의 E2 포논의 피크의 반값폭이 1.8 cm -1 이하, 이들이 모두 만족되도록 하고, 디바이스 기판이, 제1 GaN층의 위에 에피택셜 형성된 제2 GaN층과, 제2 GaN층의 위에 에피택셜 형성된 13족 질화물로 이루어진 디바이스층을 구비하도록 한다. It realizes a device substrate that does not cause streak morphology abnormalities. The GaN template substrate includes a base substrate and a first GaN layer epitaxially formed on the base substrate, and the compressive stress inherent in the in-plane direction of the first GaN layer is 260 MPa or more, or wave number 568 in the Raman spectrum The half width of the peak of the E2 phonon of GaN in the vicinity of cm -1 is 1.8 cm -1 or less, so that all of them are satisfied, and the device substrate is formed with a second GaN layer epitaxially formed on the first GaN layer, and a second GaN. A device layer made of a group 13 nitride formed epitaxially on the layer is provided.

A kind of grower of sodium flux growth metrhod gallium nitride single crystal

本发明公开了一种钠助熔剂法氮化镓单晶的生长装置。本装置在内部设计了籽晶夹具、反应容器、载物台等结构，在进行单晶外延生长时，降低载物台高度，可防止籽晶与未达到氮原子浓度过饱和的金属熔融液接触，从而避免了籽晶分解，防止表面质量劣化；传动杆连接的电机带动反应腔托盘转动，使反应容器及其内部坩埚与籽晶夹具产生相对转动，实现籽晶夹持杆对金属熔融液的搅拌，改善其内部的氮原子浓度均匀性，从而达到提高籽晶周围氮原子浓度的目的，避免晶体贫氮；半密封式的反应容器结构能够减少晶体生长过程中钠蒸气的逸出并阻挡外界杂质气氛，从而使金属钠能够持续发挥助熔剂的作用，为氮化镓单晶外延提供稳定、纯净的生长条件。

Process for growing single-crystal silicon carbide

본 발명은, 흑연 도가니 내에서 가열된 Si를 융해한 융액에 탄화규소 결정을 접촉시켜 단결정 기판 상에 탄화규소 단결정을 성장시키는 방법에 있어서, 상기 융액 내에, Cr 및 X(X는 Ni 및 Co 중 적어도 1종임)의 원소를 전체 조성 중의 각각의 원소의 비율로서 Cr이 30 내지 70at.％, X가 1 내지 25at.％가 되는 범위로 하여 첨가한 Si-Cr-X-C 융액으로부터 탄화규소 단결정을 석출 및 성장시키는 것을 특징으로 하는 탄화규소 단결정의 성장법이다. 용액법에 의한 결정 성장층 표면의 모폴로지의 향상을 실현할 수 있다. The present invention relates to a method of growing silicon carbide single crystals on a single crystal substrate by contacting silicon carbide crystals with a molten Si melted in a graphite crucible, wherein Cr and X (X is Ni and Co) Precipitates a silicon carbide single crystal from a Si-Cr-XC melt added with at least one element) in a range such that Cr is 30 to 70 at.% And X is 1 to 25 at.% As a proportion of each element in the whole composition. And a silicon carbide single crystal growth method characterized by growing. Improvement of the morphology of the surface of the crystal growth layer by the solution method can be realized. 단열재, 흑연 도가니, 탄화수소 단결정, 열전대, 고주파 코일 Insulation, graphite crucible, hydrocarbon single crystal, thermocouple, high frequency coil

A method of producing crystals of nitrides of group 13 elements and melt compositions

플럭스법에 의해 융액 내에서 13족 원소 질화물을 제조하는 방법으로서, 융액을, 13족 원소 원료, 알칼리 금속과 알칼리 토류 금속 중 적어도 하나의 원료 및 액체의 게르마늄 원료의 조성물을 가열하여 생성시킨다. 이것에 의해, 플럭스법에 의해 융액 내에서 13족 원소 질화물 결정을 제조함에 있어서, 얻어진 13족 원소 질화물 결정의 캐리어 농도 등의 특성의 면내 분포를 억제할 수 있다. A method for producing a Group 13 element nitride in a melt by a flux method, wherein the melt is produced by heating a composition of a Group 13 elementary raw material, a raw material of at least one of an alkali metal and an alkaline earth metal, and a germanium raw material. This makes it possible to suppress the in-plane distribution of the characteristics such as the carrier concentration of the Group 13 nitride element crystals obtained when the Group 13 nitride element crystals are produced in the melt by the flux method.

Method for producing silicon carbide single crystal

Method for producing group III nitride compound semiconductor crystal

Crystal growth apparatus and manufacturing method of group III nitride crystal

A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

Process for producing superconducting thin-film material and superconducting equipment

초전도 박막 재료의 제조 방법은 기상법에 의해 초전도층(3)을 형성하는 기상 공정과, 초전도층(3)에 접하도록 액상법에 의해 초전도층(4)을 형성하는 액상 공정을 구비하고 있다. 초전도층(3)과 금속 기판(1) 사이에 중간층(2)을 형성하는 공정이 더 구비되어 있는 것이 바람직하다. 금속 기판(1)은 금속으로 이루어져 있고, 또한 중간층(2)은 암석형, 페로브스카이트형 또는 파이로클로어형 중 어느 하나의 결정 구조를 갖는 산화물로 이루어져 있고, 또한 초전도층(3) 및 초전도층(4)은 모두 RE123계의 조성을 갖고 있는 것이 바람직하다. 이것에 의해, 임계 전류치를 향상할 수 있다. The method for producing a superconducting thin film material includes a gas phase step of forming the superconducting layer 3 by a gas phase method and a liquid phase step of forming the superconducting layer 4 by a liquid phase method so as to contact the superconducting layer 3. It is preferable that the process of forming the intermediate | middle layer 2 between the superconducting layer 3 and the metal substrate 1 further is provided. The metal substrate 1 is made of metal, and the intermediate layer 2 is made of an oxide having a crystal structure of any one of rock type, perovskite type or pyrochlore type, and also the superconducting layer 3 and superconducting. It is preferable that all the layers 4 have the composition of RE123 type | system | group. Thereby, the threshold current value can be improved.

PROCESS FOR FORMING A CRYSTALLIZED SILICON LAYER IN SURFACE OF MULTIPLE SUBSTRATES

PROCESS FOR THE PREPARATION OF MONOCRYSTALLINE CUBIC SESQUIOXIDES AND THEIR APPLICATIONS

La présente invention est relative à un procédé de préparation de monocristaux massifs ou en couches minces de sesquioxydes cubiques (groupe d'espace n°206, Ia-3) de scandium, d'yttrium ou de terres rares dopés aux ions lanthanides de valence +III, par une technique de croissance en flux à haute température, et aux diverses applications des monocristaux obtenus selon ce procédé, notamment dans le domaine de l'optique. The present invention relates to a method for preparing solid or thin-layer single crystals of cubic sesquioxides (space group No. 206, Ia-3) of scandium, yttrium or rare earths doped with lanthanide ions of valence + III, by a high temperature flow growth technique, and the various applications of single crystals obtained according to this process, particularly in the field of optics.

PROCESS FOR THE PREPARATION OF MONOCRYSTALLINE CUBIC SESQUIOXIDES AND THEIR APPLICATIONS

Method for obtaining single crystal ferrite films

Manufacturing process for monocrystalline ferrite films

Low temperature silicon growth