КОМПЛЕКС ЦИФРОВОЙ РАДИОГРАФИИ ДЛЯ ИЗМЕРЕНИЯ ТОЛЩИНЫ СТЕНКИ ПРОДУКТОПРОВОДОВ В ПРОЦЕССЕ ЭКСПЛУАТАЦИИ

Комплекс цифровой радиографии для измерения толщины стенки продуктопроводов в процессе эксплуатации, содержащий источник излучения, приемник излучения - многоразовая гибкая фосфорная пластина, устройство для считывания информации с многоразовых гибких фосфорных пластин, запоминающее и обрабатывающее устройство, отличающийся тем, что контролируемое изделие размещается между источником излучения и приемником излучения, а именно многоразовой фосфорной пластиной увеличенного габаритного размера, на расстоянии друг от друга не менее трех диаметров изоляции продуктопровода перпендикулярно направлению просвечивания и позволяет одновременно измерять толщину стеки и определять внешний и внутренний профиль двух противоположных стенок продуктопровода в процессе эксплуатации.

СПОСОБ АНАЛИЗА УСТРОЙСТВА

... 1. Способ, в котором выполняют анализ образца электронного устройства посредством замера некоторого свойства в нескольких точках указанного образца, и подвергают, до выполнения анализа, указанные несколько точек, по меньшей мере, одной обработке, увеличивающей различие указанного свойства, по меньшей мере, в двух элементах образца электронного устройства.2. Способ по п.1, отличающийся тем, что указанное свойство выбирают из группы, включающей механическое свойство, физическое свойство, химическое свойство и электрическое свойство.3. Способ по п.1, отличающийся тем, что анализ выполняют по методике, выбранной из группы, включающей растровую электронную микроскопию, просвечивающую электронную микроскопию и атомно-силовую микроскопию.4. Способ по п.1, отличающийся тем, что, по меньшей мере, два элемента представляют собой, по меньшей мере, два слоя пакета слоев.5. Способ по п.4, отличающийся тем, что электронное устройство включает пакет слоев, а указанная обработка включает резку пакета слоев ...

Способ измерения параметров слоев дорожной одежды

Изобретение относится к области подповерхностной радиолокации и может применяться при определении толщины слоев грунта широкого класса дорожных объектов. Технический результат заключается в повышении точности измерений. Изобретение представляет собой способ обработки георадарных сигналов, основанный на анализе расширения или сужения ширины пиков отраженных сигналов, соответствующих границам слоев с разными значениями их диэлектрической проницаемости, вследствие изменения соответствующих углов преломления радиоволн. Способ содержит: георадарное подповерхностное зондирование дорожной одежды, привязку результатов к сетке координат, определение ширины пятна, попадающего в диаграмму направленности, расчёт ширины пика отражённого сигнала, расчёт параметров, определяющий структуру дорожной одежды. 4 ил.

Verfahren und Vorrichtung zur Extrusion eines nicht rotationssymmetrischen Stranges

Verfahren zur Extrusion eines nicht rotationssymmetrischen Stranges aus mindestens zwei, insbesondere drei, sich zumindest teilweise überlappenden Strangkomponenten, jeweils bestehend aus einem Elastomer oder einer Elastomermischung, insbesondere Kautschuk oder Kautschukmischung, wobei die Strangkomponenten Grenzflächen und/oder Stoßstellen miteinander ausbilden, die Position von Außenkoordinaten des Stranges unter Verwendung eines berührungslosen Messverfahrens, insbesondere eines Lasermessverfahrens, ermittelbar ist, weiterhin zur Bestimmung der Position von Koordinaten der Grenzflächen und/oder Stoßstellen und/oder der Verteilung der Strangkomponenten im Strangquerschnitt elektromagnetische Strahlung emittiert wird, welche den Strang zumindest teilweise durchdringt, die elektromagnetische Strahlung nach dem zumindest teilweisen Durchdringen des Stranges detektiert sowie hierdurch mindestens ein Messsignal erzeugt wird und der Strang sich dabei relativ zu zumindest einer die elektromagnetische ...

Vorrichtung zur Analyse von Werkstoffen und Verwendung dieser Vorrichtung.

Verfahren und Anordnung zur Bestimmung der Wandstärke eines zylindrischen Objektes

Die vorliegende Erfindung betrifft ein Verfahren sowie eine Antennenanordnung zur Bestimmung der Wandstärke eines dielektrischen zylindrischen Objektes. Bei dem Verfahren wird ein Abschnitt des zylindrischen Objektes mit Radarwellen bestrahlt und vom zylindrischen Objekt reflektierte Radarwellen werden erfasst und ausgewertet, um die Wandstärke des bestrahlten Abschnittes zu bestimmen. Das zylindrische Objekt wird dabei mit zylinderförmigen Radarwellen bestrahlt, deren Wellenform an die äußere Form des zylindrischen Körpers angepasst ist. Dies kann durch Nutzung einer Antennenanordnung mit einem speziell geformten Radarreflektor erreicht werden. Das vorgeschlagene Verfahren ermöglicht die hochgenaue Vermessung der Wandstärke zylindrischer Objekte auf kostengünstige Weise.

VERFAHREN ZUR AUTOMATISCHEN WANDDICKENMESSUNG VON ROHREN UND VORRICHTUNG ZUR DURCHFUEHRUNG DES VERFAHRENS

METHOD AND APPARATUS FOR GAUGING THE THICKNESS OF FLAT METAL PRODUCTS

... 1331525 Radar DNEPROPETROVSKY ORDENA TRUDOVOGO KRASNOGO ZNAMEI GOSUDARSTVENNY UNIVERSITET IMENI 300 LETIA VOSSOEDINENIA UKRAINY S ROSSIEI 19 Aug 1971 38883/71 Heading H4D The thickness of a flat metal product is measured by radiating microwave electromagnetic energy on to both sides via a resonator circuit whose parameters are variable to achieve resonance and measuring the resonance signal. Microwave source 9 provides energy via directional coupler 11 to aerial 14 which also receives reflected signals and passes them via ferrite modulator 16 to aerial 19 which picks up the twice reflected signal and passes a portion thereof via coupler 17 to detector 22. The modulator 16 phase shift is continuously varied by oscillator 24 and at resonance logic 23 passes the instantaneous voltage thereof to indicator 26 calibrated in thickness. In a second embodiment (Fig. 3, not shown) a variable frequency source provides energy to a four-port circulator which directs energy to a first aerial, directs ...

Measurement of industrial products manufactured by extrusion techniques

Method of measuring film thickness and monitoring liquid flow using backscattered x-rays and gamma-rays

IMPROVEMENTS IN OR RELATING TO A PROCESS AND DEVICE FOR NON-DESTRUCTIVE TESTING OR MEASURING

Furnace lining measurement

The thickness of a lining (12) of a furnace is measured by irradiating the lining with pulses of fast neutrons from a source (20), and detecting with a detector (22) radiation from the lining (12) received in the interval after one such neutron pulse and before the next neutron pulse. Thermal neutron or gamma radiation may be counted, for example, between 4 ms and 10 ms after a pulse. Such delayed counts are due to neutrons which have diffused through a large thickness of the liner (12), and so enable the thickness to be determined. Wear or erosion of the liner (12) can thus be monitored.

Thickness measurement

A measuring device for determining the thickness of a non-homogeneous medium such as the thickness of a road structure. The device includes a radar transmitter and two spaced receivers. Information on the timing of the transmitted signal as well as the signals received by the two receivers is used to calculate the material thickness while eliminating signal drift.

TUBE BARRIER GAUGE

MEASURING THICKNESS OF THIN LAYERS

Method and device for measuring a layer thickness of an object

METHOD AND AN APPARATUS FOR THE MEASUREMENT OF THE WALL THICKNESS OF A TUBE

... 1490256 Measuring tube thickness MANNESMANNRÍHREN-WERKE AG 23 May 1975 [20 Aug 1974] 22494/75 Heading G1A In an apparatus for measuring the thickness (variations) of a tube 11, a radio-active radiation source 4 and coaxial radiation protection elements 6, together with equi-angularly spaced scintillation counters 5, are attached to a mobile carriage 2. The carriage is moved to and fro (on a bed 1 by a drive 3) between a "testing position", Fig. 1, of the tube 11, and a "calibrating position", Fig. 3 (not shown), wherein the source is inside a piece of calibration tube 8, that is fixed by bars 9 to a rear wall of the bed 1. The source 4 is positioned relative to apertures 7 in the protection elements 6 so that the radiation received by the detectors has travelled along a 45 degrees path.

VERFAHREN ZUR MESSUNG WETTERBEDINGTER ZUSTANDSÄNDERUNGEN AN DER OBERFLÄCHE VON VERKEHRSFLÄCHEN UND VORRICHTUNG ZUM DURCHFÜHREN DES VERFAHRENS

PROCEDURE AND MECHANISM FOR THE MEASUREMENT OF THE THICKNESS OF A MATERIAL LAYER

VERFAHREN ZUR MESSUNG WETTERBEDINGTER ZUSTANDSAENDERUNGEN AN DER OBERFLAECHE VON VERKEHRSFLAECHEN UND VORRICHTUNG ZUM DURCHFUEHREN DES VERFAHRENS

VERFAHREN ZUR MESSUNG DER BESCHICHTUNGSDICKE VON UMMANTELTEN DRAEHTEN ODER ROHREN

Verfahren zum Messen und Anpassen der Wandstärke eines Rohres

Verfahren zum Messen und Anpassen der Wandstärke (W) eines durch ein Schleudergießverfahren hergestellten Rohres (1) während einer Serienfertigung, wobei die Wandstärke (W) durch eine unmittelbar an einer Schleudervorrichtung (2) angeordnete Messvorrichtung (3) gemessen wird.

Method for measuring and adjusting the wall thickness of a pipe

Verfahren zum Messen und Anpassen der Wandstärke (W) eines durch ein Schleudergießverfahren hergestellten Rohres(1) während einer Serienfertigung, wobei die Wandstärke (W) durch eine unmittelbar an einer Schleudervorrichtung (2) angeordnete, radiometrische Messvorrichtung (3) gemessen wird.

STRAY RADIATION PROCEDURE AND - APPARATUS.

COMPUTER-COUPLED TOMOGRAPHI THICKNESS PROFILE MEASUREMENT

Device for the separate attitude of thickness and density of a material under test with a weight per unit area measuring system with radioactive radiation

NONDESTRUCTIVE CHARACTERIZATION OF THIN FILMS USING MEASURED BASIS SPECTRA AND/OR BASED ON ACQUIRED SPECTRUM

A METHOD OF CONTROLLING AND/OR MEASURING LAYER THICKNESS SUCH AS THE THICKNESS OF SURFACE LAYERS

NONDESTRUCTIVE, ABSOLUTE DETERMINATION OF THICKNESS OF OR DEPTH IN DIELECTRIC MATERIALS

Enhanced measurement of thickness in bulk dielectric materials is disclosed. Microwave radiation is partially reflected at interfaces where the dielectric constant changes (e.g., the back wall of a part). The reflected microwaves are combined with a portion of the outgoing beam at each of at least two separate detectors. A pair of sinusoidal or quasi-sinusoidal wave results. Thickness or depth measurement is enhanced by exploiting the phase and amplitude relationships between multiple sinusoidal or quasi-sinusoidal standing waves at detectors sharing a common microwave source. These relationships are used to determine an unambiguous relationship between the signal and the thickness or depth.

Microwave probe for furnace refractory material

A method and system for evaluating the condition of a remote surface of a material, especially a refractory material, including the steps of providing a wide band coherent radar antenna that is selected based upon an impedance match with the material to be evaluated, wherein said antenna is provided a physical configuration adapted to delay receipt of a signal of interest reflected from said remote surface of said material by a time period sufficient to distinguish between said reflected signal of interest and reflected spurious signals from a near surface of said material, placing said antenna adjacent said near surface of said material, irradiating said material with coherent microwave radiation tuned over a frequency range, detecting reflected microwave radiation from said remote surface of said material, and determining the thickness of the material based upon a determined distance traveled by said signal of interest.

Microwave probe for furnace refractory material

A method and system for evaluating the condition of a remote surface of a material, especially a refractory material, including the steps of providing a wide band coherent radar antenna that is selected based upon an impedance match with the material to be evaluated, wherein said antenna is provided a physical configuration adapted to delay receipt of a signal of interest reflected from said remote surface of said material by a time period sufficient to distinguish between said reflected signal of interest and reflected spurious signals from a near surface of said material, placing said antenna adjacent said near surface of said material, irradiating said material with coherent microwave radiation tuned over a frequency range, detecting reflected microwave radiation from said remote surface of said material, and determining the thickness of the material based upon a determined distance traveled by said signal of interest.

Nondestructive, absolute determination of thickness of or depth in dielectric materials

Enhanced measurement of thickness in bulk dielectric materials is disclosed. Microwave radiation is partially reflected at interfaces where the dielectric constant changes (e.g., the back wall of a part). The reflected microwaves are combined with a portion of the outgoing beam at each of at least two separate detectors. A pair of sinusoidal or quasi-sinusoidal waves results. Thickness or depth measurement is enhanced by exploiting the phase and amplitude relationships between multiple sinusoidal or quasi-sinusoidal standing waves at detectors sharing a common microwave source. These relationships are used to determine an unambiguous relationship between the signal and the thickness or depth.

METHOD AND APPARATUS FOR PRODUCING PIPE, WALL THICKNESS VARIATION-OBTAINING DEVICE, AND COMPUTER PROGRAM

In a method of producing a pipe, the producing condition of the pipe is regulated as follows: complex Fourier transform is performed on measured values of thickness at different portions in an axial cross section of a pipe, kinds of wall thickness variations are classified, amounts of the variations are calculated from absolute values of complex Fourier components, positions of thick wall portions or thin wall portions are calculated from phases of the complex Fourier components, and the producing condition of the pipe is regulated based on the kinds of wall thickness variations, the amounts of the variations, and the positions of thick wall portions or thin wall portions. Relationship between an amount (r) of wall thickness variation of a primary wall thickness variation obtained for the axial cross section and a phase (.theta.), which is represented by r.cndot.exp (j.theta.), is subjected to complex Fourier transform as a function in the length direction of the pipe. Wall thickness variations ...

PROCEDURE FOR MEASURING UNIT AREA WEIGHTS

The present invention provides a method for measuring unit area weights in material combinations having a base material, a precoat therein and at least one surface coat which method comprises irradiating the material combination with X-rays which excite the characteristic X-ray radiation of a substance in the precoat, the intensity of which is measured both above and below the coated base material, the absorption in the material combination of the primary radiation from the radiation source is measured and calculated from the mutually independent results of the unit area weights of the different coats of measurement obtained.

APPARATUS AND METHOD FOR LINEARIZING THE OUTPUT OF A NORMALLY NONLINEAR RADIO FREQUENCY THICKNESS GAUGE

MATERIAL EROSION MONITORING SYSTEM AND METHOD

Disclosed is an improved system and method to evaluate the status of a material. The system and method are operative to identify flaws and measure the erosion profile and thickness of different materials, including refractory materials, using electromagnetic waves. The system is designed to reduce a plurality of reflections, associated with the propagation of electromagnetic waves launched into the material under evaluation, by a sufficient extent so as to enable detection of electromagnetic waves of interest reflected from remote discontinuities of the material. Furthermore, the system and method utilize a configuration and signal processing techniques that reduce clutter and enable the isolation of electromagnetic waves of interest. Moreover, the launcher is impedance matched to the material under evaluation, and the feeding mechanism is designed to mitigate multiple reflection effects to further suppress clutter.

TISSUE SENSOR

A non-invasive sensor suitable for measuring the depth of fat in animal tissue is described, the sensor generating and transmitting focussed discrete narrow band microwave signals into the tissue, receiving reflected microwave signals from the tissue and providing magnitude and phase information of the reflected microwave signals for a processing means to compute a value of the fat depth within the tissue.

PROCESS AND METHOD FOR REMOTELY MEASURING AND QUANTIFYING CARBON DIOXIDE SEQUESTRATION FROM OCEAN IRON ENRICHMENT

Disclosed is a method and process for measuring oceanographic parameters that may be used to create estimates of the quantity of carbon dioxide gas that is removed from the atmosphere from an Ocean Iron Enrichment event. This process uses data observations from Autonomous Underwater Vehicles, Satellite observations and/or Unmanned Aerial Vehicles to determine metrics such as chlorophyll, temperature, turbidity, oxygen, particulate inorganic carbon etc. that may be used to calculate the total anthropogenic carbon dioxide that is removed from the atmosphere. Therefore, the carbon dioxide removal may be determined without requiring a manned presence in the area of study, providing a significant reduction in cost. Direct in-situ measurements of carbon flux through analysis of physical samples through the water column may be used as a verification/calibration metric using sediment traps spaced vertically in the water column from surface to the deep thermocline layer. Alternatively, water samples ...

ARRANGEMENT FOR MEASURING THICKNESS OF A MEDIUM

A measuring device for determining the thickness of a non-homogenous medium such as the thickness or a road structure. The device includes a radar transmitter Tx and two spaced receivers Rx1, Rx2. Information on the timing of the transmitted signal as well as the signals received by the two receivers is used to calculate the material thickness whilst eliminating signal drift.

Vorrichtung zum Messen von Materialeigenschaften

Messverfahren zur Bestimmung der Schichtdicke eines auf eine leitende Unterlage im Vakuum aufgetragenen Dielektrikums

Dispositif de mesure d'un déplacement

Appareil pour l'indication et/ou la mesure de l'épaisseur d'un revêtement mince

Procédé de mesure de la position d'une paroi conductrice et dispositif de mise en oeuvre de ce procédé

Verfahren zur Dickenmessung an sich bewegendem Blattmaterial

Vorrichtung zur Einstellung des Sollwertes des Flächengewichtes eines Messgutes an einer Flächengewicht-Messanlage mit radioaktiver Strahlung

Measurement of coating thickness - uses back scatter count with radionuclide radiation and correction for non-linearity

The method is for measuring the thickness of coatings by irradiation with appropriate radiation from a radionuclide and detecting the back-scatter by a detector which generates a number of pulses characterising the thickness of the layers, and feeding the pulses into a computer circuit which corrects for non linearity of relationship between pulse number and layer thickness, the characteristics of the computer being specified by a relationship quoted relating to the numbers of pulses for zero and infinite thickness, a constant for a given radiator and combination of coating/backing materials, a linear constant for a given radiator and coating/backing combination.

PROCEDURE FOR THE MEASUREMENT OF LAYER THICKNESSES AND/OR SEPARATION AND/OR DISSOLUTION SPEEDS WITH DEAD AND GALVANIC SEPARATION PROCEDURES.

PROCEDURE FOR EXAMINING PRODUCT SAMPLES AND ARRANGEMENT FOR THE EXECUTION OF THE PROCEDURE.

DEVICE FOR MEASURING DUENNER LAYERS OF MEANS BETA RAYS.

PROCEDURE FOR THE REGULATION OF THE THICKNESS OF CURRENT MATERIAL UNDER TEST COURSES.

Vorrichtung und Verfahren zur Bestimmung einer Dicke einer Folie.

Die Erfindung betrifft eine Vorrichtung zur Bestimmung einer Dicke einer Folie (10) umfassend eine Röntgenquelle (2) zur Erzeugung einer elektromagnetischen Primärstrahlung (21), einen Detektor (4) zur Erfassung einer von der Folie (10) emittierten elektromagnetischen Sekundärstrahlung (22), welche Sekundärstrahlung (22) durch eine Wechselwirkung der Primärstrahlung (21) mit der Folie (10) induziert ist; und einen Szintillator (3) zur Umwandlung der Sekundärstrahlung (22) in ein vom Detektor (4) detektierbares Licht (23); wobei der Szintillator (3) einen Strahlendurchgang (31) umfasst und die Röntgenquelle (2) derart an dem Strahlendurchgang (31) angeordnet ist, dass die Primärstrahlung (21) durch den Szintillator (3) auf die Folie (10) strahlen kann, ohne direkt mit dem Szintillator in Berührung zu kommen.

Vorrichtung und Verfahren zur Bestimmung einer Dicke einer Folie.

Die Erfindung betrifft eine Vorrichtung zur Bestimmung einer Dicke einer Folie (10) umfassend eine Röntgenquelle (2) zur Erzeugung einer elektromagnetischen Primärstrahlung (21), einen Detektor (4) zur Erfassung einer von der Folie (10) emittierten elektromagnetischen Sekundärstrahlung (22), welche Sekundärstrahlung (22) durch eine Wechselwirkung der Primärstrahlung (21) mit der Folie (10) induziert ist; und einen Szintillator (3) zur Umwandlung der Sekundärstrahlung (22) in ein vom Detektor (4) detektierbares Licht (23); wobei der Szintillator (3) einen Strahlendurchgang (31) umfasst und die Röntgenquelle (2) derart an dem Strahlendurchgang (31) angeordnet ist, dass die Primärstrahlung (21) durch den Szintillator (3) auf die Folie (10) strahlen kann, ohne direkt mit dem Szintillator in Berührung zu kommen. Weiterhin betrifft die Erfindung ein Verfahren zur Messung einer Dicke einer Folie unter Verwendung der erfindungsgemässen Vorrichtung.

X-ray circle

PROBE OF MEASUREMENT OF CORROSION OF DRAINS

Procede de mesure de l'epaisseur de couches de chaussees a l'aide d'un radar impulsionnel

L'invention concerne un procede de mesure de l'epaisseur de couches de chaussees a l'aide d'un radar impulsionnel, qui consiste : 1° prealablement a un cycle de mesure, a faire emettre le radar d'une part en champ libre, d'autre part vers une plaque metallique et a acquerir les signaux respectifs S1 et S2 recus en correspondance, a former un signal S3 = S2 - S1 et a mesurer sur ce signal l'amplitude Ei de l'echo sur la plaque metallique; 2° durant un cycle de mesure, a faire emettre le radar vers la chaussee, en incidence normale, et a acquerir le signal S4 renvoye alors par celle-ci, puis a former un signal S5 = S4 - S1 et a mesurer sur ce signal S5 l'amplitude Er de la premiere impulsion d'echo A, renvoyee par la surface de la chaussee, a en deduire le coefficient de reflexion R = Er / Ei de ladite surface puis la permittivite 'epsilon' du materiau de la chaussee par la formule = (1 + R) / (1 - R)et a calculer l'epaisseur d = c 'DELTA't / 2 de cette couche ou c est la celerite de la lumiere ...

Automatic calender control - for laminating sheet rubber and metallic textiles by comparing thickness measurement before and after lamination

PROCEDE ET DISPOSITIF POUR ESSAIS NON DESTRUCTIFS DE MATERIAUX, NOTAMMENT POUR DES MESURES D'EPAISSEUR

PROCEDE D'ESSAI NON DESTRUCTIF DE MATERIAUX, NOTAMMENT POUR LA DETERMINATION DE L'EPAISSEUR DE MATIERES PLASTIQUES AINSI QUE DES MATIERES CONSTITUANT DES ADHESIFS ET DES REVETEMENTS, AU MOYEN DE CHAMPS ALTERNATIFS ELECTRIQUES ET MAGNETIQUES DE HAUTE FREQUENCE, CARACTERISE EN CE QU'ON AJOUTE AU MATERIAU QUI DOIT ETRE SOUMIS AUX ESSAIS, DANS UNE PROPORTION REPRESENTANT UN VOLUME RELATIVEMENT FAIBLE, DES PARTICULES CONDUCTRICES DE L'ELECTRICITE OU FERROMAGNETIQUES ET QU'ENSUITE ON EFFECTUE SUR LA PIECE D'ESSAI TERMINEE OU RECOUVERTE D'UN REVETEMENT DES MESURES DE CONDUCTIBILITE ELECTRIQUE OU DE PERMEABILITE MAGNETIQUE AU MOYEN DE CHAMPS ALTERNATIFS ELECTRIQUES ET MAGNETIQUES A HAUTE FREQUENCE DONT LES VARIATIONS CHRONOLOGIQUE ET SPATIALE SONT ADAPTEES AU BUT DES MESURES.

MEASURING THE BARRIER OF A TUBE FUEL

BATI POUR DES APPAREILS DESTINES A EFFECTUER UNE MESURE SUR DES BANDES DE PRODUIT EN MOUVEMENT

L'INVENTION CONCERNE UN BATI POUR DES APPAREILS PERMETTANT D'EFFECTUER UNE MESURE SUR DES BANDES DE PRODUIT EN MOUVEMENT. CE BATI COMPREND AU MOINS DEUX BRANCHES ALLONGEES 1 ET 2, EN ELEMENTS TUBULAIRES, FIXEES A UN MONTANT VERTICAL 13, 14, EGALEMENT TUBULAIRE DE FACON A FORMER UNE FENTE DE MESURE POUR LA BANDE DE PRODUIT; LES BRANCHES 1, 2 SONT FIXEES AU MONTANT 13, 14 PAR DES PATTES PLEINES 27, SENSIBLEMENT PARALLELEPIPEDIQUES, QUI SONT POURVUES CHACUNE D'UN TENON 20 SORTANT D'UNE FACE, D'UN ELEMENT D'UN ASSEMBLAGE A VIS 28, TRANSVERSAL A L'AXE DU TENON 20, AINSI QUE D'UNE PLAQUE D'APPUI 31. L'INVENTION EST UTILISABLE NOTAMMENT POUR SUPPORTER UN APPAREIL DE MESURE RADIOMETRIQUE DE L'EPAISSEUR OU DU POIDS PAR UNITE DE SURFACE D'UN PRODUIT EN BANDE.

Beta ray back-scattering appts. - for thin film measurement using beta point source, aperture ring and geiger-mueller counter on adjustable mounting

Process and system with COMPTON effect for the localization of a plan separating two mediums from densitésdifférentes

... - Procédé et système permettant d'effectuer des mesures de haute précision de la localisation d'un plan (7) séparant deux milieux (6) de densités différentes, en utilisant l'effet COMPTON, ainsi que leur application à la mesure de l'épaisseur de couches. - Un ensemble de mesure (14), constitué d'un émetteur-récepteur à rayons X ou gamma focalisés en émission et réception irradie un volume élémentaire (12) desdits milieux (6) et est déplacé perpendiculairement au plan (7) séparant ces milieux (6), et l'on calcule un cinquièmee signal représentant l'excédent, vis-à-vis d'un seuil, de la dérivée, par rapport au déplacament, du signal détecté, puis on calcule le barycentre des déplacements correspondant à la dernière succession de ces cinquièmes signaux de même signe, en pondérant ces déplacements par ledit cinquième signal correspondant.

BUILT FOR APPARATUSES INTEND TO TAKE A MEASUREMENT ON TAPES OF PRODUCT MOVING

METHOD AND APPARATUS FOR MEASURING THE CONCENTRATION OF ELEMENTS IN SOLUTION AND THE THICKNESS OF SOLID SAMPLES

Process for controlling metal thickness, and deposition and degradation rates

PROCEEDED OF REGULATION THICKNESS OF MATTER BANDS TO MEASURE MOVING

Method and apparatuses for in situ monitoring of the thickness of ultrathin films deposited by ion sputtering

DEVICE OF MEASUREMENT THIN THICKNESS OF LAYER BY a X-RADIATION OF FLUORESCENCE

THICKNESS MEASURING METHOD

DEVICE OF MEASUREMENT Of a WEIGHT PER UNIT OF AREA

METHOD FOR MEASURING A DISPLACEMENT AND DEVICE BY [...]

METHOD FOR PAINT THICKNESS DISTRIBUTION VISUALIZATION AND ACTIVE THERMAL IMAGING DEVICE FOR SAME

Disclosed are a method for paint thickness distribution visualization, and an active thermal imaging device for the same. A heating unit performs heating by light beam application while moving relative to a measurement target region of a measurement structure. A measurement unit and the heating unit scan and image the heated measurement target region and generate multiple thermal images related to thermal energy propagation in the measurement target region. Coordinate transformation is performed in accordance with a time-space integrated coordinate transformation algorithm and the dynamic multiple thermal images are transformed into a static time-space integrated thermal image. The thickness of the paint layer can be calculated by using a Fourier thermal conductivity equation. The pre-heating time-space integrated thermal image is subtracted from the transformed time-space integrated thermal image for removal of noise attributable to an external heat source. Also removed are, for example ...

광학 미러, 엑스선 형광 분석 장치 및 엑스선 형광 분석 방법

... 본 발명은 엑스선 형광 분석 장치에 관한 것으로, 엑스선 방사선(19)으로 샘플(15)를 조사하기 위한 엑스선 소스(10), 상기 샘플(15)에 의해 방출된 엑스선 형광 방사선(16)을 측정하기 위한 엑스선 검출기(17), 및 상기 엑스선 소스(10)의 빔 경로에서 소정 각도를 가지도록 배열된 광학 미러(20)에 의해 샘플(15)의 조사된 측정 위치(29)의 광학적 제어 이미지를 생성하는 카메라(25)를 포함하며, 상기 광학 미러는 그 위에 미러층(28)이 제공되는 캐리어(21)를 포함한다. 샘플, 특히 샘플링된 표면 지점의 실제적인 제어 레코딩(control recording)이 가능한 엑스선 형광 장치를 생산하기 위하여 본 발명은 엑스 방사선(19)을 위한 통과 윈도우(23)을 갖는 광학 미러(20)를 포함하는데, 상기 광학 미러는, 캐리어(21) 내의 구멍(opening)(23), 및 미러층(28)을 형성하고 상기 캐리어(21)의 외부 측 상에서 상기 구멍(23)을 커버링하는 포일(foil)(22)에 의해 형성된다.

RADIATION THICKNESS METER CAPABLE OF MEASURING THE THICKNESS OF AN OBJECT FROM THE DOSES OF RADIATION

PURPOSE: A radiation thickness meter is provided to measure the thickness of radiation even when an object is moved to the light axis of the radiation. CONSTITUTION: A radiation thickness meter comprises a C-shaped frame(1d), a radiation source(1a), a main detector(1b), a sub detector(1c), a correction calculating unit(2a), and a thickness calculating unit(2b). The C-shaped frame is installed between objects vertically to a pass line plane for returning the objects. The radiation source is installed on one arm portion facing the C-shaped frame. The main detector detects the penetrating radiation. The sub detector detects the scattered beam scattered from the object around the main detector. The correction calculating unit calculates the difference of the sub detector and the main detector. The thickness calculating unit calculates the thickness from the output of the correction calculating unit. COPYRIGHT KIPO 2011 ...

processo e dispositivo de medida em contínuo de espessura de uma camada de material de revestimento de uma cinta em passagem e instalação de revestimento em contínuo de uma cinta em passagem

Thickness measuring device

This thickness measuring device is provided with: a radiation source for irradiating an object to be measured with radiation; a radiation detector which is disposed at a position facing the radiation source with the object to be measured therebetween, and detects radiation transmitted through the object to be measured; a plurality of A/D converters which are each independently connected to the radiation detector and which convert an output signal from the radiation detector to a digital value; a thickness calculation means that calculates the thickness of the object to be measured on the basis of the digital values of the plurality of A/D converters; an abnormality detection means that detects abnormalities of each of the plurality of A/D converters; and an exclusion means that excludes any A/D converter for which an abnormality has been detected by the abnormality detection means from objects to be calculated of the thickness calculation means.

Silicon germanium thickness and composition determination using combined XPS and XRF technologies

Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.

METHOD OF NANO THIN FILM THICKNESS MEASUREMENT BY AUGER ELECTRON SPECTRSCOPY

A system and method for measuring the thickness of an ultra-thin multi-layer film on a substrate is disclosed. A physical model of an ultra-thin multilayer structure and Auger electron emission from the nano-multilayer structure is built. A mathematical model for the Auger Electron Spectroscopy (AES) measurement of the multilayer thin film thickness is derived according to the physical model. Auger electron spectroscopy (AES) is first performed on a series of calibration samples. The results are entered into the mathematical model to determine the parameters in the mathematical equation. The parameters may be calibrated by the correlation measurements of the alternate techniques. AES analysis is performed on the ultra-thin multi-layer film structure. The results are entered into the mathematical model and the thickness is calculated.

OBSERVATION SPECIMEN FOR USE IN ELECTRON MICROSCOPY, ELECTRON MICROSCOPY, ELECTRON MICROSCOPE, AND DEVICE FOR PRODUCING OBSERVATION SPECIMEN

The electrical charging by a primary electronic is inhibited to produce a clear edge contrast from an observation specimen (i.e., a specimen to be observed), whereby the shape of the surface of a sample can be measured with high accuracy. An observation specimen in which a liquid medium comprising an ionic liquid is formed in a thin-film-like or a webbing-film-like form on a sample is used. An electron microscopy using the observation specimen comprises: a step of measuring the thickness of a liquid medium comprising an ionic liquid on a sample; a step of controlling the conditions for irradiation with a primary electron on the basis of the thickness of the liquid medium comprising the ionic liquid; and a step of irradiating the sample with the primary electron under the above-mentioned primary electron irradiation conditions to form an image of the shape of the sample.

MICROWAVE ICE ACCRETION MEASURING INSTRUMENT

An ice measurement instrument includes a waveguide (53) operating in a transmission mode passing energy from an input port to an output port. The resonant frequency of the waveguide depends on the presence and/or thickness of ice at a measuring location. The energy applied to the input port is swept in frequency from a first frequency to a second frequency at or above an ice-free resonant frequency of said waveguide (53), and back to said first frequency. Energy received at the output port is peak detected (57) to provide a detection signal with four recognizable transitions identifying a pair of peaks which correspond to the resonant frequency of the waveguide (53). The time delay between these peaks can be used, in comparison with the time delay corresponding to an ice-free condition, to determine ice thickness.

SYSTEM AND METHOD FOR MEASURING THICKNESS OF A REFRACTORY WALL OF A GASIFIER USING ELECTROMAGNETIC ENERGY

A system and method for measuring a thickness of a refractory wall of a gasifier using electromagnetic energy is disclosed. The system includes a waveguide with a bistatic or monostatic phased array antenna at one end. The waveguide is operably connected to a Network Analyzer that generates a pulse of electromagnetic energy with a desired bandwidth. The pulse is transmitted through a coaxial cable to the waveguide. The reflection of the pulse is received by the waveguide and input to a data acquisition system. An output device displays the resolvable discontinuities in impedance encountered by the pulse in its propagation path in the system ...

Coating thickness gauge by X-ray fluorescence

In order to automatically measure the thickness of coatings on a sample, a plurality of calibration curves are stored in a memory circuit beforehand, and X-ray fluorescence generated by irradiation of the sample with primary X-rays is detected by an X-ray fluorescence coating thickness gauge. The X-ray fluorescence is differentiated according to wavelength (energy) by a differentiating circuit. By this differential manipulation, the materials of a sample are identified. Based on the identified constituents of a sample, automatic selection can be made of the most probable and suitable calibration curve out of the plural number of calibration curves stored in a memory and finally coating thickness can be measured on the basis of the selected calibration curve and the intensity of X-ray fluorescence of the sample obtained by the coating thickness gauge.

Radiation thickness gauge for sheet material

Apparatus and method for measuring thickness of sheet material, particularly in a rolling mill, and controlling a roll stand. An X-ray florescence analyzer for determining the components of the sheet material, a radiation thickness gauge with a calibration system for gauging material of varying composition, and a computer for calculating a calibration signal for the thickness gauge based on the output of the analyzer, with the thickness gauge output providing a measure of the thickness of the sheet material at the gauge and a control signal for controlling the roll stand.

METHOD OF MEASURING THICKNESS OF NONMETALLIC PAVING MATERIAL WITH COMPENSATION FOR PROPERTIES OF THE MATERIAL

A method and apparatus for nondestructively measuring the thickness of a non-metallic layer, or wall, which utilizes a metallic sheet-like structure placed in the plane of one surface of the layer, or wall, so that apparatus to propagate an electromagnetic radiation field can be positioned against the opposite surface of the layer, or wall, and the thickness determined as a function of changes in the radiation field caused by changes in the distance between the source of the field and the metallic structure; the apparatus being calibrated remotely from the location of the metallic structure by utilizing a second metallic structure and observing the effects when positioned at known distances from the radiation field.

OBSERVATION SPECIMEN FOR USE IN ELECTRON MICROSCOPY, ELECTRON MICROSCOPY, ELECTRON MICROSCOPE, AND DEVICE FOR PRODUCING OBSERVATION SPECIMEN

The electrical charging by a primary electronic is inhibited to produce a clear edge contrast from an observation specimen (i.e., a specimen to be observed), whereby the shape of the surface of a sample can be measured with high accuracy. An observation specimen in which a liquid medium comprising an ionic liquid is formed in a thin-film-like or a webbing-film-like form on a sample is used. An electron microscopy using the observation specimen comprises: a step of measuring the thickness of a liquid medium comprising an ionic liquid on a sample; a step of controlling the conditions for irradiation with a primary electron on the basis of the thickness of the liquid medium comprising the ionic liquid; and a step of irradiating the sample with the primary electron under the above-mentioned primary electron irradiation conditions to form an image of the shape of the sample.

Material erosion monitoring system and method

Disclosed is an improved system and method to evaluate the status of a material. The system and method are operative to identify flaws and measure the erosion profile and thickness of different materials, including refractory materials, using electromagnetic waves. The system is designed to reduce a plurality of reflections, associated with the propagation of electromagnetic waves launched into the material under evaluation, by a sufficient extent so as to enable detection of electromagnetic waves of interest reflected from remote discontinuities of the material. Furthermore, the system and method utilize a configuration and signal processing techniques that reduce clutter and enable the isolation of electromagnetic waves of interest. Moreover, the launcher is impedance matched to the material under evaluation, and the feeding mechanism is designed to mitigate multiple reflection effects to further suppress clutter.

METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEASURING CONTENT OF SILICON CARBIDE BY USING XPS

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

DEVICE AND METHOD FOR TESTING THICKNESS OF A WALL OF A DIELECTRIC TUBULAR OBJECT

СПОСОБ АНАЛИЗА УСТРОЙСТВА

Использование: для выяснения причин отказов устройства или для оценки качества процесса производства внутренней части электронного устройства. Сущность изобретения заключается в том, чтоспособ, в котором выполняют анализ образца электронного устройства посредством замера некоторого свойства в нескольких точках указанного образца и подвергают, до выполнения анализа, указанные несколько точек, по меньшей мере, одной обработке, увеличивающей различие указанного свойства, по меньшей мере, в двух элементах образца электронного устройства, представляющих собой, по меньшей мере, два слоя пакета слоев, включенного в электронное устройство, при этом указанная обработка включает резку пакета слоев таким образом, что создается различие морфологии в поверхности среза, по меньшей мере, между двумя из указанных слоев пакета. Технический результат: обеспечение возможности облегчения исследования качества электронного устройства. 3 з.п. ф-лы, 1 ил.

УСТРОЙСТВО ДЛЯ ИЗМЕРЕНИЯ ВНУТРЕННЕГО ДИАМЕТРА МЕТАЛЛИЧЕСКОЙ ТРУБЫ

Изобретение может быть использовано для бесконтактного измерения внутреннего диаметра металлических труб на металлургических, машиностроительных предприятиях, в том числе при их производстве, например, по методу центробежного литья. Оно может быть применено также при бесконтактном измерении внутреннего диаметра и толщины стенок труб. Предлагаемое устройство для измерения внутреннего диаметра металлической трубы, содержащее размещаемый внутри трубы коаксиально с ней металлический стержень, выполненный из трех участков, первый и второй из которых имеют одинаковый диаметр, а третий участок, расположенный между ними на измерительном участке трубы, имеет отличный от них диаметр, при этом на этом участке трубы возбуждены электромагнитные колебания как в открытом с торцов объемном резонаторе, электронный блок для возбуждения в объемном резонаторе и съема электромагнитных колебаний и измерения резонансной частоты электромагнитных колебаний, электрически соединенный посредством линии связи и элемента ...

Способ определения средней толщины серебряного покрытия на медной оребренной стенке

Использование: для измерения толщины серебряного покрытия на медной оребренной детали неразрушающим способом. Сущность изобретения заключается в том, что выполняют тест-образцы с известной толщиной покрытия, используют рентгеновское излучение, испускаемое рентгенофлюоресцентным анализатором (РФА), измеряют значение концентрации элемента покрытия в весовых процентах (вес. %), получают выражение корреляционной функции между измеренной концентрацией элемента покрытия и толщиной покрытия, при этом вначале измеряют концентрацию серебра в вес. % на поверхности торца ребер, ориентируя ось прибора перпендикулярно оси межреберного канала, определяют толщину серебряного покрытия на поверхности торца ребер, используя корреляционную функцию в виде выражения: H=K⋅C, где H- толщина серебряного покрытия на торце ребра; K- коэффициент корреляции функции для пары медь серебро равный 0.156; C- концентрация серебряного покрытия в вес. %, а среднюю толщину серебряного покрытия на поверхностях оребренной стенки ...

Method and apparatus for the rapid measurement of the thickness of a film

In the production of film, there is a problem in ensuring a uniform thickness of the film. In order to be able to adjust the film production apparatus, it is important to obtain operationally reliable measurements of the thickness at relatively short intervals. The film thickness is measured by directing a beta -radiation source (11), such as a 10 mCi Sr-90, against the film (64) and by measuring the reflected radiation using a scintillation detector (12). The signal from the detector is integrated at a given interval and the integration value is a measure of the film thickness. Such a measurement has considerable uncertainty. The shorter the interval, the greater the uncertainty. Since both rapid and operationally reliable measurements are required, two integration intervals of different length are used, a relatively short interval and a relatively long interval (14, 15). The first interval provides a large number of measurements which have a high uncertainty. The second interval ensures ...

Method for passive measurement of liquid films and/or foam layers on water

A method for passive measurement of liquid films and/or foam layers on water by measuring the radiation temperature by means of at least one radiometer is proposed, in which in order to determine unambiguous values relating to the type and thickness of the oil film the measurement is performed from two different angles of view. ...

DEVICE FOR MEASURING THE THICKNESS OF A STRIP RUNNING OUT OF A ROLLING MILL

Method and apparatus for thickness measurement

Measurement of paint coating quantity

To measure a painted layer 14 on a sample 10 to be analyzed, e.g. a galvanized steel comprising a substrate (13) having the painted layer 12 with or without an intervention of a primer layer (15), the painted layer (14) is irradiated with X-rays so as to excite the sample 10. The amount of paint coating forming the painted layer 14 is calculated from the intensity of resultant Compton scattering rays Bc, with the intensity of resultant fluorescent X-rays B2 emitted from zinc contained in a plated zinc and also the absorption of the fluorescent X-rays B2 being taken into consideration to correct for the contribution to the Compton scattering from the layers other than paint layer 14. In a two layer situation an additional measurement is made of the fluorescent X-rays (B3) emitted by strontium contained in the primer coating layer (15, fig. 2). ...

Calibration standard

Device analysis

Performing an analysis of an electronic device sample by measuring a property at a plurality of points of said electronic device sample, and in advance of said analysis subjecting said plurality of points to at least one treatment that increases the difference in said property between at least two elements of said electronic device sample.

MICROWAVE PROBE FOR FURNACE REFRACTORY MATERIAL

Disclosed is a system and method to aid in these inspections that avoid the disadvantages of the prior art. The system and method are operative to take thickness measurements of, and thus evaluate the condition of, materials including but not limited to refractory materials, operating in frequency bands that result in less loss than previously known technologies, and utilizing a system configuration and signal processing techniques that isolate the reflected signal of interest from other spurious antenna reflections, particularly by creating (through the configuration of the antenna assembly) a time delay between such spurious reflections and the actual reflected signal of interest, thus enabling better isolation of the signal of interest. Still further, the antenna assembly is intrinsically matched to the material to be probed, such as by impedance matching the antenna to the particular material (through knowledge of the dielectric and magnetic properties of the material to be evaluated) to even further suppress spurious reflections. 1. A method for evaluating the condition of a remote surface of a material , comprising the steps of:providing a wide band coherent radar antenna that is selected based upon an impedance match with the material to be evaluated, wherein said antenna is provided a physical configuration adapted to delay receipt of a signal of interest reflected from said remote surface of said material by a time period sufficient to distinguish between said reflected signal of interest and reflected spurious signals from a near surface of said material;placing said antenna adjacent said near surface of said material;irradiating said material with coherent microwave radiation tuned over a frequency range;detecting reflected microwave radiation from said remote surface of said material; anddetermining the thickness of the material based upon a determined distance traveled by said signal of interest.2. The method of claim 1 , wherein said distance traveled ...

PIPE THICKNESS MEASURING DEVICE AND METHOD, AND RECORDING MEDIUM

A pipe thickness measuring device is provided, including a luminance profile obtaining unit obtaining luminance profiles of radiographic images of a pipe to be measured in a direction crossing the pipe, an outer diameter point detecting unit detecting outer diameter points of the pipe based on the obtained luminance profiles, a region setting unit setting a predetermined region inside two of the outer diameter points of the pipe detected by the outer diameter point detecting unit, and an inner diameter point detecting unit detecting inner diameter points of the pipe based on a luminance profile corresponding to the set predetermined region from among the luminance profiles obtained by the luminance profile obtaining unit. 1. A pipe thickness measuring device comprising:a luminance profile obtaining unit which obtains luminance profiles in a direction crossing a pipe to be measured from radiographic images of the pipe;an outer diameter point detecting unit which detects outer diameter points of the pipe based on the obtained luminance profiles;a region setting unit which sets a predetermined region inside two of the outer diameter points of the pipe detected by the outer diameter point detecting unit; andan inner diameter point detecting unit which detects inner diameter points of the pipe based on a luminance profile corresponding to the set predetermined region from among the luminance profiles obtained by the luminance profile obtaining unit.2. The pipe thickness measuring device according to claim 1 , whereinthe outer diameter point detecting unit includesa first order differential profile calculating unit which calculates a first order differential profile by first order differentiating the luminance profile obtained by the luminance profile obtaining unit,a noise removing unit which removes noise components from the first order differential profile, anda unit which detects the outer diameter points each based on a maximum value or a minimum value of the first ...

Method for measuring film thickness of soi layer of soi wafer

A method for measuring a film thickness of an SOI layer of an SOI wafer including at least an insulator layer and the SOI layer which is formed on the insulator layer and is formed of a silicon single crystal, wherein a surface of the SOT layer is irradiated with an electron beam, characteristic X-rays are detected from a side of the SOI layer surface irradiated with the electron beam, the characteristic X-rays being generated by exciting a specific element in the insulator layer with the electron beam that has passed through the SOI layer and has been attenuated in the SOI layer, and the film thickness of the SOI layer is calculated on the basis of an intensity of the detected characteristic X-rays.

MEASUREMENT PROCESSING DEVICE, X-RAY INSPECTION DEVICE, MEASUREMENT PROCESSING METHOD, MEASUREMENT PROCESSING PROGRAM, AND STRUCTURE MANUFACTURING METHOD

A measurement processing device used for an X-ray inspection device includes: a region information acquisition unit that acquires first region information based on X-rays passing through a first region that is a part of a first specimen; a storage unit that stores second region information related to a second region of a second specimen, the second region being larger than the first region; and a determination unit that determines whether or not a region corresponding to the first region is included in the second region, based on the first region information and the second region information. 127-. (canceled)28. A measurement processing device using an X-ray inspection device , comprising:a region information acquisition unit that detects X-rays passing through a partial region of a first specimen and acquires first region information related to a first region;an inclination detection unit that detects an inclination of the first specimen when acquiring the first region information; anda comparison unit that compares a standard inclination and the inclination of the first specimen detected by the inclination detection unit.29. The measurement processing device according to claim 28 , whereinthe region information acquisition unit detects X-rays passing through a partial region of a second specimen, and acquires second region information related to a second region,the inclination detection unit detects an inclination of the second specimen when acquiring the second region information, andthe comparison unit compares the inclination of the second specimen and the inclination of the first specimen detected by the inclination detection unit.30. The measurement processing device according to claim 28 , whereinthe inclination detection unit detects the inclination of the first specimen when acquiring the first region information, based on the first region information.31. The measurement processing device according to claim 28 , whereinthe inclination of the first specimen ...

METHODS FOR MEASURING A THICKNESS OF AN OBJECT

A method for analyzing an object includes measuring a first reflectivity of light from a surface and measuring a second reflectivity of light from the object, after the object is formed on the surface. A variation between the first and second reflectivities is calculated, and the variation is transformed by a predetermined transform. A thickness of the object is determined based on the transformed variation. 1. A method for analyzing an object , the method comprising:measuring a first X-ray reflectivity from a substrate before formation of the object;forming the object on the substrate;measuring a second X-ray reflectivity from the substrate after the formation of the object;calculating a variation between the first and second X-ray reflectivities;transforming the calculated variation using a fast-Fourier transform; anddetermining a thickness of the object based on the transformed calculated variation.2. The method as claimed in claim 1 , further comprising:irradiating an X-ray for measuring each of the first and second X-ray reflectivities at an angle of about 5 degrees or less with respect to a surface of the substrate.3. The method as claimed in claim 1 , wherein:measuring the first X-ray reflectivity includes measuring a first X-ray reflectivity spectrum; andmeasuring the second X-ray reflectivity includes measuring a second X-ray reflectivity spectrum.4. The method as claimed in claim 3 , further comprising:generating a delta-spectrum between the first and second X-ray reflectivity spectrums.5. The method as claimed in claim 3 , wherein calculating the variation includes subtracting a raw first X-ray reflectivity spectrum from a raw second X-ray reflectivity spectrum.6. The method as claimed in claim 1 , wherein the object is a layer or a pattern.7. The method as claimed in claim 6 , wherein the layer or pattern is included in a semiconductor device.8. The method as claimed in claim 1 , further comprising:numerically expressing a full width at half maximum ( ...

DIMENSION MEASUREMENT METHOD USING PROJECTION IMAGE OBTAINED BY X-RAY CT APPARATUS

In measuring a dimension of an object to be measured W made of a single material, a plurality of transmission images of the object to be measured W are obtained by using an X-ray CT apparatus, and then respective projection images are generated. The projection images are registered with CAD data used in designing the object to be measured W. The dimension of the object to be measured W is calculated by using a relationship between the registered CAD data and projection images. In such a manner, high-precision dimension measurement is achieved by using several tens of projection images and design information without performing CT reconstruction. 1. A dimension measurement method using a projection image obtained by an X-ray CT apparatus , the dimension measurement method comprising , in measuring a dimension of an object to be measured made of a single material:obtaining a plurality of transmission images of the object to be measured by using the X-ray CT apparatus, and then generating respective projection images;registering the projection images with CAD data used in designing the object to be measured; andcalculating the dimension of the object to be measured by using a relationship between the registered CAD data and the projection images.2. The dimension measurement method according to claim 1 , further comprising:selecting a representative projection image group for the registered CAD data;obtaining combinations of all projection values in the representative projection image group with transmission lengths estimated from the CAD data; andcalculating the dimension of the object to be measured by using a relationship between the obtained projection values and the estimated transmission lengths.3. The dimension measurement method according to claim 1 , further comprising:determining an attenuation coefficient of X-rays by using the registered CAD data so that a difference between a calculated thickness at a measurement point having a known thickness and a design ...

SELECTIVE PIPE INSPECTION

A method, apparatus, and system operate to include transmitting a plurality of electromagnetic waves, over a range of frequencies, into a plurality of pipes. The secondary electromagnetic field responses, associated with the electromagnetic waves, from the plurality of pipes are measured. Selective ones of the secondary electromagnetic field responses are canceled or reduced based on a selected pipe for inspection of the plurality of pipes. 1. A method comprising:transmitting electromagnetic energy, at a plurality of frequencies, into a plurality of pipes;measuring secondary electromagnetic field responses, associated with the electromagnetic energy, from the plurality of pipes;calculating weights using pipe information or the secondary electromagnetic field responses;combining a plurality of the responses using the weights, at the plurality of frequencies, to generate a signal insensitive to a subset of the pipes or defects in at least one pipe of the plurality of pipes; anddetermining a feature of the at least one pipe of the plurality of pipes based on the signal.2. The method of claim 1 , further comprising adjusting the weights such that the signal is insensitive to defects of a predetermined size.3. The method of claim 1 , wherein the defects comprise variations in thickness of the at least one pipe claim 1 , variations in relative magnetic permeability or the at least one pipe claim 1 , or variations in electrical conductivity of the at least one pipe.4. The method of claim 1 , wherein determining the feature of the at least one pipe comprises comparing the signal to a library of functions or a forward simulation model.5. The method of claim 1 , wherein the defects comprise variations in electrical conductivity of the at least one pipe.6. The method of claim 1 , wherein combining at least two of the responses comprises combining at least N of the plurality of frequencies to generate the signal claim 1 , through adjustment of the weights claim 1 , that is ...

HYBRID METROLOGY TECHNIQUE

A computerized system and method are provided for use in measuring at least one parameter of interest of a structure. The system comprises a server utility configured for data communication with at least first and second data provider utilities. The server utility receives, from the server provider utilities, measured data comprising first and second measured data pieces of different types indicative of parameters of the same structure; and is capable of processing the first and second measured data pieces for optimizing one or more first parameters values of the structure in one of the first and second measured data pieces by utilizing one or more second parameters values of the structure of the other of said first and second measured data pieces. 1. A computerized system for use in measuring at least one parameter of interest of a structure , the system comprising:a server utility configured for data communication with at least first and second data provider utilities, for receiving therefrom measured data comprising first and second measured data pieces of different types indicative of parameters of the same structure, said server utility being configured and operable for concurrently processing said first and second measured data pieces for optimizing one or more first parameters values of the structure in one of the first and second measured data pieces by utilizing one or more second parameters values of the structure of the other of said first and second measured data pieces.2. The system of claim 1 , wherein the server utility comprises:a first processing utility connected to the first data provider for receiving the first measured data piece and determining said one or more first parameters values;a second processing utility connected to the second data provider for receiving the second measured data piece and determining said one or more second parameters values; anda hybrid co-optimization utility connected to the first and second processing utilities, ...

METHOD FOR AUTOMATICALLY DETECTING A LOADING SURFACE AND WASHING INSTALLATION FOR CARRYING OUT SAID METHOD

An automatic detection method for automatically detection a loading surface of a vehicle, includes determining a side contour of a vehicle, determining a height profile of the vehicle, calculating a deviation between the side contour and the height profile, and determining the loading surface based on the deviation. 1. A method for automatically detecting a lower-lying loading area of a vehicle with an at least partially lateral side wall , the method comprising:determining a side contour of a vehicle;determining a height profile of the vehicle;calculating a deviation between the side contour and the height profile; anddetermining the loading area on the basis of the deviation and the position and/or extent of the loading area from a course of the deviation.2. The method according to claim 1 , wherein the depth of the loading area is determined relative to the side wall of the vehicle.3. The method according to claim 1 , wherein the side contour is determined by an electronic camera recording a side view of the vehicle.4. The method according to claim 1 , wherein the side contour is determined by a light grid moving along the vehicle.5. The method according to claim 1 , wherein the side contour is determined by an ultrasonic sensor or a radar sensor.6. The method according to claim 1 , wherein the height profile is determined in the center of the vehicle.7. The method according to claim 1 , wherein the height profile is determined by a runtime measurement of light.8. The method according to claim 1 , wherein the height profile is determined by triangulation of light.9. The method according to claim 1 , wherein the height profile is determined by an ultrasonic sensor or a radar sensor.10. The method according to claim 1 , wherein a first height profile is determined by a radar sensor and a second height profile is determined by a light sensor.11. The method according to claim 1 , wherein the method is used in a vehicle washing system.12. A vehicle washing system ...

Inspection Device for Conveyor Belt

An inspection device is provided in which X-rays are radiated in a fan-like shape with respect to an extension direction of steel cords, are transmitted through a conveyor belt, and reach an X-ray line sensor. A control device makes an X-ray generator and the X-ray line sensor move in a fixed relative position at a certain speed within a certain movement range in a direction parallel with a plane and orthogonal to an extension direction of the steel cords. The control device generates two-dimensional image information on the basis of an X-ray transmission signal obtained each time the X-ray generator and the X-ray line sensor move a unit amount equal to a pixel pitch of the X-ray line sensor. The control device detects measurement information relating to the conveyor belt and the steel cords on the basis of the obtained two-dimensional image information.

Conveyor system and measuring device for determining water content of a construction material

A system is provided. The system includes a conveyor apparatus configured for conveying a material and a water content measurement system positioned about the conveyor apparatus for determining water content in the material. A dimension characteristic measurement system for detecting one or more dimension characteristics of the material is provided and a computer device is configured to manipulate data received from the water content measurement system and the dimension characteristic measurement system to determine a water content of the material.

Scanning electron microscopy system and pattern depth measurement method

A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.

Pattern Measurement Method and Measurement Apparatus

A pattern measurement method and measurement apparatus are provided that appropriately evaluate the deformation of a pattern occurring due to a micro loading effect. In order to achieve the above-mentioned object, there are provided pattern measurement method and apparatus that measure a dimension of a pattern formed on a sample. In the pattern measurement method and apparatus, distances between a reference pattern and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions are measured, and the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions are classified according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern. 1. A pattern measurement method of measuring a dimension of a pattern formed on a sample based on a detection signal acquired based on irradiation of a charged particle beam , the method comprising:measuring distances between a reference pattern formed on the sample and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions; andclassifying the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern.2. The pattern measurement method according to claim 1 ,wherein the classification of the measurement results is divided into a classification in which the distance between the reference pattern and the adjacent pattern is a first distance and a ...

FEED-FORWARD OF MULTI-LAYER AND MULTI-PROCESS INFORMATION USING XPS AND XRF TECHNOLOGIES

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate. 1. A method of thin film characterization , the method comprising:measuring first XPS and/or XRF intensity signals for a sample having a first layer above a substrate, the first XPS and/or XRF intensity signals including information for the first layer and for the substrate;determining a thickness of the first layer based on the first XPS and/or XRF intensity signals;combining the information for the first layer and for the substrate to estimate an effective substrate;measuring second XPS and/or XRF intensity signals for a sample having a second layer above the first layer above the substrate, the second XPS and/or XRF intensity signals including information for the second layer, for the first layer and for the substrate; anddetermining a thickness of the second layer based on the second XPS and/or XRF intensity signals, the thickness accounting for the effective substrate.2. The method of claim 1 ...

Cement evaluation using neutron tool

A method for evaluating cement in a cased wellbore in a geological formation includes placing a downhole tool into the cased wellbore, where the cased wellbore has been cased using a cement that contains a particular material. The method includes emitting neutrons using the downhole tool, wherein the neutrons interact with the particular material via inelastic scattering or capture of neutrons and cause the material to emit an energy spectrum of the gamma rays associated with the material or wherein the time-based measurement of gamma rays or neutrons is influenced by the presence of the material. The method includes using the downhole tool to detect radiation radiation, such as the energy spectrum of the gamma rays, or a die-away pattern of the gamma rays or neutrons that indicates a presence of the particular material and enable to estimate a parameter of the cement.

METHOD AND APPARATUS FOR MEASURING THIN FILM THICKNESS USING X-RAY

Provided is an apparatus and method for measuring for measuring a thickness of thin film using x-ray where a thickness of a thin film of nanometer(nm)-level can be accurately measured without destructing an target sample, through determination of thickness of thin film of the target sample, by determining a calibration curve by comparing a difference of intensities of signals scattered by a special component included in a base layer of the reference sample having a base layer and a base layer formed with the thin film layer with a thickness of the thin film layer, and determining the thickness of thin film layer of the target sample by comparing a difference of intensities of signals scattered by the special component included in the base layer of the target sample having the base layer formed with the thin film layer with the reference sample having the base layer with the calibration curve. 1. A method for measuring thickness of thin film using x-ray , the method comprising:detecting an intensity of a signal scattered by a special component included in a base layer by irradiating x-ray to the base layer of a reference sample;detecting an intensity of a signal scattered by the special component included in the base layer by irradiating x-ray to a thin film layer formed on the base layer of the reference sample;determining a calibration curve by comparing a difference between intensities of signals respectively detected from the base layer irradiation step and the thin film layer irradiation step with a thickness of the thin film layer;detecting an intensity of a signal scattered by the special component included in a base layer by irradiating x-ray to a thin film layer formed on the base layer of a target sample; anddetermining the thickness of thin film layer of the target sample by comparing the difference between intensities of signals respectively detected from the base layer irradiation step and the target sample irradiation step with the calibration curve.2. ...

POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE WITH HEAT SINK, POWER MODULE, METHOD OF MANUFACTURING POWER MODULE SUBSTRATE, AND COPPER MEMBER-BONDING PASTE

This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate a nitride layer that is formed on the surface of the ceramic substrate between the copper plate and the ceramic substrate and an Ag—Cu eutectic structure layer having a thickness of 15 μm or less that is formed between the nitride layer and the copper plate. 1. A power module substrate , comprising:{'sub': 3', '4, 'a ceramic substrate that is formed of AlN or SiNand has a first surface;'}a copper plate that is formed of copper or a copper alloy and is laminated and bonded on the first surface of the ceramic substrate;a nitride layer that contains at least one nitride of elements selected from Ti, Hf, Zr, and Nb and is formed on the first surface of the ceramic substrate between the copper plate and the ceramic substrate; andan Ag—Cu eutectic structure layer that has a thickness of 15 μm or less and is formed between the nitride layer and the copper plate;wherein the thickness of the Ag—Cu eutectic structure layer is measured by a method comprising:obtaining a backscattered electron image of an interface between the copper plate and the ceramic substrate using an EPMA;based on the backscattered electron image, measuring the area of the Ag—Cu eutectic structure layer continuously formed on the bonding interface in a measurement visual field at a magnification of 2000 times;dividing the area of the Ag—Cu eutectic structure layer by the width of the measurement visual field, andobtaining the average of the thicknesses in five measurement visual fields as the thickness of the Ag—Cu eutectic structure layer.2. The power module substrate according to claim 1 , wherein the ceramic substrate is formed of AlN claim 1 , andthe thickness of the Ag—Cu eutectic structure layer is 14 μm or less.3. The power module substrate according to claim 1 , wherein{'sub': 3', '4, 'the ceramic substrate is formed of SiNand'}the thickness of the Ag ...

A METHOD OF GENERATING A THREE DIMENSIONAL SURFACE PROFILE OF A FOOD OBJECT

A method of generating a three dimensional surface profile of a food object is provided wherein a food object is exposed with a conical X-ray beam while the food object is conveyed. The attenuation of the X-rays after penetrating through the food object is detected, and the detection is performed using a plurality of sensors arranged below the food object. The plurality of sensors are positioned at predetermined angular positions in relation to the X-ray source. For each of the plurality of sensors, the detected attenuation is converted into a penetration length of the X-ray beam, and the penetration length indicates the length from where the X-ray beam enters and leaves the food object. Surface coordinates are sequentially determined using the penetration lengths and the angular positions as input data. 110.-. (canceled)11. A method of generating a three dimensional surface profile of a food object , comprising:exposing the food object with a conical X-ray beam while the food object is conveyed,detecting the attenuation of the X-rays after penetrating through the food object, the detection being performed using a plurality of sensors arranged below the food object, the plurality of sensors being positioned at a pre-determined positions in relation to the X-ray source,converting, for each of the plurality of sensors, the detected attenuation into a penetration length of the X-ray beam, the penetration length indicating the length from where the X-ray beam enters and leaves the food object, andsequentially determining surface coordinates using the penetration lengths and the sensor positions as input data.12. The method according to claim 11 , wherein the step of converting the detected attenuation into the penetration length is performed in accordance to a pre-calibration.13. The method according to claim 11 , wherein the plurality of sensors are arranged in at least one line substantially perpendicular to a conveying direction of the food item.14. The method ...

MEASUREMENT SYSTEM AND METHOD FOR MEASURING IN THIN FILMS

A measurement method and system are presented for in-line measurements of one or more parameters of thin films in structures progressing on a production line. First measured data and second measured data are provided from multiple measurements sites on the thin film being measured, wherein the first measured data corresponds to first type measurements from a first selected set of a relatively small number of the measurement sites, and the second measured data corresponds to second type optical measurements from a second set of significantly higher number of the measurements sites. The first measured data is processed for determining at least one value of at least one parameter of the thin film in each of the measurement sites of said first set. Such at least one parameter value is utilized for interpreting the second measured data, thereby obtaining data indicative of distribution of values of said at least one parameter within said second set of measurement sites. 1. A measurement method for in-line measurements of one or more parameters of thin films in structures progressing on a production line , the method comprising:providing first measured data and second measured data from multiple measurements sites on the thin film being measured, wherein the first measured data corresponds to first type measurements from a first selected set of a relatively small number of the measurement sites, and the second measured data corresponds to second type optical measurements from a second set of significantly higher number of the measurements sites;processing the first measured data and determining at least one value of at least one parameter of the thin film in each of the measurement sites of said first set; andutilizing said at least one parameter value for interpreting the second measured data, thereby obtaining data indicative of distribution of values of said at least one parameter within said second set of measurement sites.2. The method of claim 1 , wherein the ...

METHODS AND SYSTEMS FOR THICKNESS MEASUREMENT OF MULTI-LAYER STRUCTURES

A system and method for measuring thicknesses of layers of a multi-layered structure. The method includes generating a terahertz wave pulse, transmitting the terahertz wave pulse to a multi-layered structure having multiple layers of materials, receiving reflected terahertz wave pulses reflected by boundaries between the multiple layers as the terahertz wave pulse penetrates the structure, and processing the reflected terahertz wave pulses to: (i) determine whether the reflected terahertz wave pulses have a pulse width overlap; (ii) in response to determining that a pulse width overlap exists, generate modified reflected terahertz wave pulses; measure the time delays associated with each of the modified reflected terahertz pulses and (ii) determine a thickness of each of the multiple layers of materials based upon the time delay and a material refractive index of each of the materials. 1. A method for measuring thicknesses of layers of a multi-layered structure , the method comprising:generating a terahertz wave pulse;transmitting the terahertz wave pulse to the multi-layered structure having multiple layers of materials;receiving reflected terahertz wave pulses reflected by boundaries between the multiple layers as the terahertz wave pulse penetrates the multi-layered structure; and (i) determine whether the reflected terahertz wave pulses have a pulse width overlap;', '(ii) in response to determining that a pulse width overlap exists, generate modified reflected terahertz wave pulses;', '(iii) measure time delays associated with each of the modified reflected terahertz pulses; and', '(iv) determine a thickness of each of the multiple layers of materials based upon the time delays and a material refractive index of each of the materials., 'processing the reflected terahertz wave pulses to2. The method of claim 1 , wherein processing the reflected terahertz wave pulses to generate modified reflected terahertz wave pulses comprises:determining an amplitude and time ...

METHOD AND DEVICE FOR IDENTIFYING A MATERIAL BY THE SPECTRAL ANALYSIS OF ELECTROMAGNETIC RADIATION PASSING THROUGH SAID MATERIAL

A method identifying a material, includes: measuring an electromagnetic radiation spectrum emitted through the material; determining at least one measurement energy band, and spectral coefficients of a comparison function in the measurement band, using the measured spectrum; estimating, using the determined spectral coefficients, a nature and/or thickness of the material based on a set of reference spectral parameters relating to reference materials and/or thicknesses and defined in reference bands. The estimating includes: prior selecting plural reference materials and/or thicknesses, as possible candidates, from comparing the spectral coefficients determined with at least one portion of the reference spectral parameters; estimating the nature and/or thickness of the material from comparing the spectral coefficients determined with the spectral parameters of at least one portion of the possible candidates, in at least one energy band common to the reference bands of the at least one portion of possible candidates and the measurement band. 110-. (canceled)11. A method for identifying a material by spectral analysis of electromagnetic radiation able to pass through the material , comprising:measuring a spectrum of electromagnetic radiation emitted through the material to be identified;determining at least one energy band, as a measurement band, and spectral coefficients of a comparison function in the measurement band, using the measured spectrum;estimating, using the determined spectral coefficients, a nature and/or thickness of the material to be identified on the basis of a set of reference spectral parameters relating to reference materials and/or thicknesses, the reference spectral parameters being defined for each reference material and/or thickness in at least one energy band as a reference band, prior selecting a plurality of reference materials and/or thicknesses, as possible candidates, from a comparison of the spectral coefficients determined with at least ...

METHOD AND APPARATUS FOR SENSING BOUNDARY BETWEEN MATERIALS

A method and apparatus for sensing boundaries between materials are provided. The method for sensing boundaries between materials comprises the steps of: fixing sensing modules in place; transmitting and receiving radio frequency signals; and analyzing radio frequency signals. The method enables real-time detection of positions of the boundaries between materials and handling and monitoring of changes in the boundary positions. The apparatus for sensing boundaries between materials comprises at least two sensing modules, or a radio frequency transmitting unit and a plurality of radio frequency signals receiving unit, or a plurality of radio frequency transmitting unit and a radio frequency signals receiving unit. The radio frequency signals are transmitted, received and analyzed by the radio frequency transmitting unit and the radio frequency signals receiving unit to determine the boundary positions and changes therein. 1. A method for sensing boundaries between materials , comprising the steps of:applying sensing modules, including fixing at least two said sensing modules vertically to at least one material, at least a said sensing module being disposed in the said material, the sensing modules each comprising a radio frequency signals transmitting unit and a radio frequency signals receiving unit, wherein the radio frequency signals transmitting unit and the radio frequency signals receiving unit are located at different positions in the material and correspond horizontally to each other;transmitting and receiving radio frequency signals, including transmitting the radio frequency signals from each of the radio frequency signals transmitting units and receiving the radio frequency signals by a corresponding one of the radio frequency signals receiving units; andanalyzing radio frequency signals, including analyzing amplitude or phase of the radio frequency signals received by each of the radio frequency signals receiving units, and sensing or monitoring a ...

MEASURING DEVICE, MEASURING METHOD, AND SEMICONDUCTOR STORAGE DEVICE

A measuring device includes a measuring stage on which a subject is placed, an X-ray irradiation unit, an X-ray detection unit that detects scattered X-rays generated from the subject and an analysis unit that analyzes the diffraction image obtained by photo-electrically converting scattered X-rays and presumes (estimates) the three-dimensional shape of the subject. In the subject, holes are formed in the ON stack film from the opening of the etching mask film formed on the ON stack film. The analysis unit presumes the three-dimensional shape of the subject based a plurality of the diffraction images acquired while changing a rotation angle of the measuring stage and the measurement data of the subject by at least one of measuring methods of a multi-wavelength light measurement and a laser ultrasonic wave measurement. 1. A measuring device comprising:a stage arranged to support a subject;an X-ray irradiator configured to irradiate the stage with X-rays;an X-ray detector configured to detect scattered X-rays emitted from the subject based on the irradiation by the X-ray irradiator; anda processor configured to analyze a diffraction image obtained by photo-electrically converting the scattered X-rays, estimate a front surface contour shape of a measurement area irradiated with the X-rays,', 'estimate an interface between a first film and a second film of the subject and a hole portion penetrating the second film,, 'the processor configured towherein the processor is configured to estimate the front surface contour shape based on (i) a plurality of the diffraction images acquired by rotating the subject, and (ii) measurement data obtained by measuring the subject using at least one measuring method of a multi-wavelength light measurement or a laser ultrasonic wave measurement.2. The measuring device according to claim 1 , wherein the x-ray irradiator includes a Transmission Small Angle X-ray Scattering arrangement.3. The measuring device according to claim 1 , wherein ...

METHOD FOR ASCERTAINING A PLANT HEIGHT OF FIELD CROPS

A method for ascertaining a plant height of field crops. The ascertainment of the plant height taking place with the aid of a signal of a radar sensor. 110-. (canceled)11. A method for ascertaining a plant height of field crops , the method comprising:ascertaining the plant height using a signal of a radar sensor.12. The method as recited in claim 11 , wherein the ascertainment of the plant height includes categorizing reflection objects as plant objects or ground objects.13. The method as recited in claim 12 , wherein a distance between the radar sensor and the reflection objects and a relative speed between the reflection objects and the radar sensor are ascertained to categorize the reflection objects.14. The method as recited in claim 13 , wherein the plant height is ascertained in that an extrapolation of a plant object curve is carried out claim 13 , the plant object curve being ascertained based on the distances between the radar sensor and the plant objects.15. The method as recited in claim 14 , wherein the plant object curve is extrapolated to a range which corresponds to a relative speed of zero between the plant objects and the radar sensor.162. The method as recited in claim claim 14 , wherein the categorization of reflection object as plant objects or ground objects takes place using training data.171. The method as recited in claim claim 14 , wherein the radar sensor is situated on an agricultural machine above a maximum plant height.18. A device configured to ascertain a plant height of field crops claim 14 , the device configured to:ascertain the plant height using a signal of a radar sensor.19. A non-transitory memory medium on which is stored a computer program for ascertaining a plant height of field crops claim 14 , the computer program claim 14 , when executed by a control unit claim 14 , causing the control unit to perform:ascertaining the plant height using a signal of a radar sensor. In some agricultural machines, for example combines and ...

ASSISTED CORROSION AND EROSION RECOGNITION

Systems, methods, and computer readable medium are provided for determining a wall loss measurement associated with corrosion and/or erosion present within an insulated pipe. A calibration image is acquired for the pipe wall at a first location and used in conjunction with an inspection image acquired for the pipe wall at a second location to determine an inspection thickness of the pope wall. An amount of wall loss measurement can be determined based on a difference of a calibration thickness for the pipe wall at the first location and the inspection thickness of the pipe wall at the second location. The wall loss measurement characterizing an amount of wall material lost due to corrosion and/or erosion present in the pipe wall at the second location. The wall loss measurement can be output for further processing and/or display. 1. A method comprising:acquiring a calibration image of a pipe wall at a first location of an insulated pipe;acquiring an inspection image of the pipe wall at a second location, the second location different than the first location;determining an inspection thickness of the pipe wall at the second;determining a wall loss measurement of the pipe wall at the second location, the wall loss measurement determined based on a difference of a calibration thickness of the pipe wall at the first location and the determined inspection thickness, the wall loss measurement characterizing an amount of wall loss in the insulated pipe at the second location; andoutputting the wall loss measurement.2. The method of claim 1 , further comprising claim 1 , generating a calibration model of the pipe wall at the first location based on the calibration image claim 1 , the calibration model including an attenuation coefficient associated with the pipe wall at the first location claim 1 , an attenuation coefficient of insulation at the first location claim 1 , and the calibration thickness of the pipe wall at the first location in the calibration image; ...

METHOD OF MEASURING THICKNESS OF Fe-Zn ALLOY PHASE OF GALVANNEALED STEEL SHEET AND APPARATUS FOR MEASURING THE SAME

A method of measuring a thickness of a Fe—Zn alloy phase included in the Fe—Zn alloy coating of the galvannealed steel sheet includes: an X-ray irradiation process of irradiating the galvannealed steel sheet with the incident X-rays; and an X-ray detection process of detecting the diffracted X-rays obtained in the X-ray irradiation process, derived from a Γ·Γphase, a δphase, and a ζ phase included in the Fe—Zn alloy coating with a crystal lattice spacing d of 1.5 Å or higher. 1. A method of measuring a thickness of a Fe—Zn alloy phase of interest included in the Fe—Zn alloy phase of the galvannealed steel sheet , the method comprising:an X-ray irradiation process of irradiating the galvannealed steel sheet with the incident X-rays; and{'sub': 1', '1, 'an X-ray detection process of detecting the diffracted X-rays, which are obtained in the X-ray irradiation process, derived from a Γ·Γphase, a δphase, and a ζ phase included in the Fe—Zn alloy phase with a crystal lattice spacing d of 1.5 Å or higher.'}2. The method of measuring a thickness of a Fe—Zn alloy phase of the galvannealed steel sheet according to claim 1 ,{'sub': 1', '1, 'wherein, in the X-ray detection process, a thickness of the Γ·Γphase is measured using a value obtained by subtracting a background intensity from an intensity of the diffracted X-ray derived from the Γ·Γphase with the crystal lattice spacing d of 1.914 Å.'}3. The method of measuring a thickness of a Fe—Zn alloy phase of the galvannealed steel sheet according to or claim 1 ,{'sub': 1', '1, 'wherein, in the X-ray detection process, a thickness of the δphase is measured using a value obtained by subtracting a background intensity from an intensity of the diffracted X-ray derived from the δphase with the crystal lattice spacing d of 2.363 Å.'}4. The method of measuring a thickness of a Fe—Zn alloy phase of the galvannealed steel sheet according to any one of to claim 1 ,wherein, in the X-ray detection process, a thickness of the ζ phase is ...

METHOD AND SYSTEM FOR NON-DESTRUCTIVELY EVALUATING A HIDDEN WORKPIECE

A method and system are provided for non-destructively evaluating a workpiece hidden by an overlying structure. In the context of a method, a workpiece is interrogated with radiation, such as x-ray radiation, that also propagates through the overlying structure. The method further includes collecting data representative of radiation backscattered from the workpiece. Based upon a thickness and material of the overlying structure, the method compares the data that has been collected from the workpiece with reference data representative of radiation backscattered from a standard that includes different respective material loss indicators hidden by an overlying structure of the same thickness and material. Each material loss indicator is a physical representation of a different amount of material loss. As a result of the comparison, the method estimates the material loss of the workpiece. 1. A method for non-destructively evaluating a workpiece hidden by an overlying structure , the method comprising:interrogating the workpiece with radiation that also propagates through the overlying structure;collecting data representative of radiation backscattered from the workpiece;based upon a thickness and material of the overlying structure, comparing, with a processor, the data that has been collected from the workpiece with reference data representative of radiation backscattered from a standard comprised of different respective material loss indicators hidden by an overlying structure of the same thickness and material, each material loss indicator being a physical representation of a different amount of material loss; andas a result of the comparing, estimating, with the processor, a material loss of the workpiece.2. A method according to further comprising determining at least one of a maximum value of the data representative of radiation backscattered from a portion of the workpiece claim 1 , a minimum value of the data representative of radiation backscattered from the ...

APPARATUS FOR MEASURING SAMPLE THICKNESS AND METHOD FOR MEASURING SAMPLE THICKNESS

An apparatus for measuring thickness includes: a chamber; a sound wave transmitter transmitting a sound wave in the chamber; a sound wave receiver receiving the sound wave transmitted from the sound wave transmitter in the chamber; and a supporter between the sound wave transmitter and the sound wave receiver. 1. An apparatus for measuring thickness comprising:a chamber;a sound wave transmitter transmitting a sound wave in the chamber;a sound wave receiver receiving the sound wave transmitted from the sound wave transmitter in the chamber; anda supporter between the sound wave transmitter and the sound wave receiver.2. The apparatus for measuring thickness of claim 1 , further comprising a thermometer in the chamber.3. The apparatus for measuring thickness of claim 1 , further comprising a cooler for cooling the chamber.4. The apparatus for measuring thickness of claim 1 , wherein an inner wall of the chamber comprises a sound absorbing material.5. The apparatus for measuring thickness of claim 1 , further comprising a controller claim 1 , controls synchronization of the sound wave transmitter and the sound wave receiver, and', 'controls the cooler according to a temperature signal received from the thermometer., 'wherein the controller is connected to the sound wave transmitter, the sound wave receiver, the thermometer, and the cooler,'}6. The apparatus for measuring thickness of claim 1 , wherein the sound wave transmitter is spaced apart from the sound wave receiver by a predetermined distance.7. The apparatus for measuring thickness of claim 1 , wherein the sound wave transmitter transmits a sound wave having an audible frequency claim 1 , andthe sound wave receiver receives the sound wave having an audible frequency.8. The apparatus for measuring thickness of claim 1 , wherein the supporter is spaced apart from the sound wave receiver by a predetermined distance.9. The apparatus for measuring thickness of claim 1 , wherein the supporter has a hole located ...

METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS

A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure. 1. A monitoring system for determining at least one property of an integrated circuit (IC), the system comprising a computer system comprising data input and output utilities, a memory utility, and a data processor and analyzer utility. This application is a continuation-in-part of PCT Application No. PCT/US2016/060147, filed Nov. 2, 2016, which claims priority benefit from U.S. Provisional Application No. 62/249,845, filed on Nov. 2, 2015, the disclosures of each of which being hereby incorporated herein by reference in their entirety.The invention generally ...

Fluoroscopic image density correction method, and image processing device

A reference density profile is generated in an outer circumference direction of a pipe having a reference welded portion on the basis of a reference fluoroscopic image generated from a radiation detection medium when a radiation source is disposed on a central axis of the pipe. A weld inspection density profile is generated in an outer circumference direction of a pipe having an inspection target welded portion on the basis of a weld inspection fluoroscopic image. On the basis of the reference density profile and the weld inspection density profile, density correction information is calculated. The density correction information is for correcting density irregularities in the weld inspection fluoroscopic image in the outer circumference direction of the pipe. On the basis of the density correction information, the density irregularities in the weld inspection fluoroscopic image arc corrected.

CHARGED PARTICLE BEAM DEVICE

A charged particle beam device according to the present invention changes a signal amount of emitted charged particles by irradiating the sample with light due to irradiation under a plurality of light irradiation conditions, and determines at least any one of a material of the sample or a shape of the sample according to the changed signal amount. 1. A charged particle beam device that irradiates a sample with a charged particle beam , the device comprising:a charged particle source that irradiates the sample with primary charged particles;a light source that emits light applied to the sample;a detector that detects secondary charged particles generated from the sample by irradiating the sample with the primary charged particles;a calculation unit that analyzes the sample by using the secondary charged particles detected by the detector;a light irradiation control system that is capable of setting at least one or more of a condition in which the light source applies the light, a first light irradiation condition, and a second light irradiation condition;a detection unit that detects the secondary charged particles emitted from the sample by the charged particle beam; andan image processing unit that forms a secondary charged particle image based on a detection signal of the secondary charged particles,whereinthe light source applies the light under the first light irradiation condition and the second light irradiation condition,the light source detects a change in a signal amount of the secondary charged particles detected by the detector between the first light irradiation condition and the second light irradiation condition by irradiating the sample with the light, andthe calculation unit determines at least any one of a material of the sample or a shape of the sample according to the changed signal amount.2. The charged particle beam device according to claim 1 , whereinthe calculation unit determines a feature of the sample from the secondary charged particle ...

THREE-DIMENSIONAL RECONSTRUCTION OF A SEMICONDUCTOR SPECIMEN

There is provided a system and a method comprising obtaining a first (respectively second) image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first (respectively second) illumination angle, determining a plurality of height values informative of a height profile of the specimen in the area, the determination comprising solving an optimization problem which comprises a plurality of functions, each function being representative of a difference between data informative of a grey level intensity at a first location in the first image and data informative of a grey level intensity at a second location in the second image, wherein, for each function, the second location is determined with respect to the first location, or conversely, when solving the optimization problem, wherein a distance between the first and the second locations depends on the height profile, and the first and second illumination angles. 1. A system of examination of a semiconductor specimen , the system comprising a processor and memory circuitry (PMC) configured to:{'claim-text': ['a first image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first illumination angle, wherein the first image is associated with a first grey level intensity profile, and', 'a second image of the area acquired by the electron beam examination tool at a second illumination angle, different from the first illumination angle,'], '#text': 'obtain:'}wherein the second image is associated with a second grey level intensity profile; anduse the first grey level intensity profile and the second grey level intensity profile to solve an optimization problem enabling determining a plurality of height values informative of a height profile of the semiconductor specimen in the area,{'claim-text': [{'claim-text': ['(1) the second grey level intensity, or data informative thereof, matches the first grey level intensity, or data informative ...

FILM THICKNESS MEASURING DEVICE AND FILM THICKNESS MEASURING METHOD

A film thickness measuring device including: a terahertz wave generator; a prism that has an entrance surface, an abutment surface capable of abutting a surface of a sample including a first film on a side where the first film is formed, and an emission surface; a terahertz wave detector that detects an S-polarization component and a P-polarization component of a reflected wave from the sample, emitted from the emission surface of the prism; and a control section configured to determine a thickness of the first film formed in the sample, based on a difference between a time waveform of the S-polarization component of the reflected wave and a time waveform of the P-polarization component of the reflected wave. 1. A film thickness measuring device comprising:a terahertz wave generator that generates a terahertz wave;a prism that has an entrance surface through which the terahertz wave emitted from the terahertz wave generator is caused to enter, an abutment surface capable of abutting a surface of a sample including a first film on a side where the first film is formed, and an emission surface from which a reflected wave from the sample is emitted;a terahertz wave detector that detects an S-polarization component and a P-polarization component of the reflected wave emitted from the emission surface of the prism; anda control section configured to determine a thickness of the first film formed in the sample, based on a difference between a time waveform of the S-polarization component of the reflected wave and a time waveform of the P-polarization component of the reflected wave.2. The film thickness measuring device according to claim 1 , wherein the sample further includes a second film that is formed on the first film and contains one of a conductive particle and a pore.3. The film thickness measuring device according to claim 2 , wherein:the control section is configured to determine a thickness of the second film, based on a peak in a time waveform obtained by ...

Method and device for determining thickness of rolling stock

Measurement accuracy during determination of the thickness of rolling stock, in particular a rolling strip or a metal plate, is remotely measured using a base measurement value for the thickness obtained by a radiation measurement system having a radiation source and a radiation detector, both carried by a holding mechanism. A reference measurement value for the thickness is measured by an ultrasonic measurement head that is likewise arranged on the holding mechanism. The reference measurement value is used to eliminate the influence of errors on the base measurement value.

METHOD AND APPARATUS FOR NONDESTRUCTIVE MEASURING OF A COATNG THICKNESS ON A CURVED SURFACE

An improved method and apparatus for non-destructive measurements of coating thicknesses on a curved surface by measuring components of the microwave energy reflected from the surface. Preferred embodiments of the present invention provide a portable microwave thickness detector with a rounded rocker-type base allowing the microwave beam to be moved through a range of angles with respect to the target surface. An optical alignment system determines when the microwave angle of incidence is at a desired angle when the components of the reflected microwave energy are measured. Preferred embodiments of the present invention also provide a portable microwave thickness detector which maintains a constant standoff distance between the between the microwave detector and the sample to be measured. 1. An apparatus for nondestructive measurement of a property of a target , the target including a substrate and a coating on the substrate , and the property being the thickness of the coating , the apparatus comprising:a housing containing a first sensor including a microwave transmitter for producing a primary beam of microwave energy, a waveguide for directing said primary beam of microwave energy towards the target, and a detector for receiving microwave energy reflected from said target;an alignment system for producing a signal when the orientation between the beam of microwave energy and the target surface is at a predetermined angle; andan analyzer for determining the thickness of the coating on the substrate by measuring components of the reflected microwave energy when the orientation between the beam of microwave energy and the target surface is at the predetermined angle.2. The apparatus of in which the alignment system comprises:an illumination source for directing illumination towards the target surface; andan optical detector for detecting illumination reflected from the target surface when the orientation between the beam of microwave energy and the target surface ...

Systems, apparatuses, and methods for measuring submerged surfaces

The present disclosure provides systems, apparatuses, and methods for measuring submerged surfaces. Embodiments include a measurement apparatus including a main frame, a source positioned outside a pipe and connected to the main frame, and a detector positioned outside the pipe at a location diametrically opposite the source and connected to the main frame. The source may transmit a first amount of radiation. The detector may receive a second amount of radiation, determine a composition of the pipe based on the first and second amounts of radiation, and send at least one measurement signal. A control canister positioned on the main frame or on a remotely operated vehicle (ROV) attached to the apparatus may receive the at least one measurement signal from the detector and convey the at least one measurement signal to software located topside.

EVALUATING AN OBJECT

A method for evaluating an object, the method may include acquiring, by a charged particle beam system, an image of an area of a reference object, wherein the area includes multiple instances of a structure of interest, and the structure of interest is of a nanometric scale; determining multiple types of attributes from the image; reducing a number of the attributes to provide reduced attribute information; generating guidelines, based on the reduced attribute information and on reference data, for evaluating the reduced attribute information; and evaluating an actual object by implementing the guidelines. 1. A method for evaluating an object , the method comprising:acquiring, by a charged particle beam system, an image of an area of a reference object, wherein the area comprises multiple instances of a structure of interest, and the structure of interest is of a nanometric scale;determining multiple types of attributes from the image;reducing a number of the attributes to provide reduced attribute information;generating guidelines, based on the reduced attribute information and on reference data, for evaluating the reduced attribute information; andevaluating an actual object by implementing the guidelines.2. The method according to claim 1 , wherein a resolution of the image is at least one hundred times finer than a resolution of the reference data.3. The method according to claim 1 , wherein the image is a backscattered electron image of nanometric scale resolution.4. The method according to claim 3 , wherein acquiring the image comprises collecting backscattered electrons by a backscattered electron detector that has a radial angular coverage range of tens of degrees.5. The method according to claim 4 , wherein acquiring the image comprises rejecting secondary electrons by an energy filter that precedes the backscattered electron detector.6. The method according to claim 1 , wherein the multiple instances of the structure of interest are positioned in recesses ...

MANUFACTURING METHOD FOR INSULATING FILM AND MANUFACTURING APPARATUS FOR THE SAME

According to one embodiment, a method of manufacturing an insulating film, includes forming an insulating film on a substrate by sputtering, measuring a thickness of the insulating film at a plurality of locations, and irradiating a surface portion of the insulating film with X rays or ions, based on the measured thickness. 1. A method of manufacturing an insulating film , comprising:forming an insulating film on a substrate by sputtering;measuring a thickness of the insulating film at a plurality of locations; andirradiating a surface portion of the insulating film with X rays or ions, based on the thickness.2. The method of claim 1 , whereinX-ray Fluorescence Analysis of detecting fluorescent X rays generated from the insulating film by the X ray irradiation is employed as measuring the thickness of the insulating film.3. The method of claim 1 , whereinthe insulating film is a nonmagnetic layer of an MTJ element formed by sandwiching the nonmagnetic layer between magnetic layers.4. The method of claim 3 , whereinthe nonmagnetic layer is MgO.5. The method of claim 3 , whereinthe irradiating with the X rays or the ions, selectively, is to irradiate a portion of a greater film thickness so as to uniform in a plane a resistance distribution of the nonmagnetic layer.6. The method of claim 1 , whereinthe forming the insulating film and the irradiating with the X rays or the ions are executed in different chambers.7. A method of manufacturing a magnetoresistive element claim 1 , comprising:forming a first magnetic layer on a substrate by sputtering;forming a nonmagnetic layer on the first magnetic layer by sputtering;measuring a thickness of the nonmagnetic layer at a plurality of locations;irradiating a part of the nonmagnetic layer with X rays or ions, based on the thickness; andforming a second magnetic layer on the nonmagnetic layer irradiated with the X rays or the ions.8. The method of claim 7 , whereinX-ray Fluorescence Analysis of detecting fluorescent X rays ...

MONITORING THICKNESS UNIFORMITY

Devices, methods, and systems for monitoring thickness uniformity are described herein. One system includes a transmitter configured to transmit a signal through a portion of a material while the material is moving, an attenuator configured to absorb a first portion of the transmitted signal, a reflector configured to reflect a second portion of the transmitted signal, a receiver configured to receive the reflected signal, and a computing device configured to determine a thickness of the portion of the material based on a time delay between the transmission of the signal and the reception of the reflected signal 1. A system for monitoring thickness uniformity , comprising:a transmitter configured to transmit a signal through a portion of a material while the material is moving;an attenuator configured to absorb a first portion of the transmitted signal;a reflector configured to reflect a second portion of the transmitted signal;a receiver configured to receive the reflected signal; anda computing device configured to determine a thickness of the portion of the material based on a time delay between the transmission of the signal and the reception of the reflected signal.2. The system of claim 1 , wherein the material is a conveyor belt.3. The system of claim 1 , wherein the transmitter and the reflector are located on opposing sides of the portion of the material.4. The system of claim 1 , wherein the transmitter and the reflector are located on a same side of the portion of the material.5. The system of claim 1 , wherein the first portion of the transmitted signal corresponds to a portion of the transmitted signal reflected towards the attenuator by a surface of the material.6. The system of claim 1 , wherein the computing device is configured to determine the thickness of the material based on:the time delay between the transmission of the signal and the reception of the reflected signal; anda time delay between a transmission of a second signal and a reception of ...

SYSTEM AND METHOD FOR MEASURING COOLING OF A COMPONENT

A system and method for measuring cooling effectiveness of a component is disclosed. The method includes providing a component having a surface provided with a coating including a volatilization-susceptible constituent and a volatilization-resistant constituent. Further, the method includes supplying a first gaseous medium over the surface of the component through a plurality of holes in the component and feeding a second gaseous medium along the surface of the component. The method includes exposing the surface of the component to the first and second gaseous mediums for a predetermined period. The method further includes determining a thickness of the coating exposed to the flow of the first and second gaseous mediums. The method includes analyzing the thickness of the coating to determine whether the coating is removed from the surface of the component upon exposure to the first and second gaseous mediums. 1. A method for measuring cooling effectiveness of a component , the method comprising:providing the component having a surface provided with a coating including a volatilization-susceptible constituent and a volatilization-resistant constituent;supplying a first gaseous medium from a first source, through a plurality of holes in the component, for forming a cooling film of the first gaseous medium on the surface;feeding a second gaseous medium from a second source, along the surface of the component;exposing the component to a flow of the first and second gaseous mediums for a predetermined period;determining a thickness of the coating exposed to the flow of the first and second gaseous mediums from a measurement device; andanalyzing the thickness of the coating to determine whether at least a portion of the coating is removed from the surface of the component upon exposure to the first and second gaseous mediums for the predetermined period, wherein a removed thickness of the coating is indicative of an ineffectively film cooled region on the surface of the ...

METHOD AND APPARATUS FOR MEASURING THICKNESS OF ELECTROLYTE MEMBRANE

An electrolyte membrane thickness measurement apparatus includes a detecting medium supplying portion configured to emit a detecting medium, a detecting portion configured to detect a metal catalyst, and an analyzing unit. A thickness direction profile of a detection signal is generated by the detecting portion, and first and second inflection points are determined in the thickness direction profile based on the intensity of the detection signal by the analyzing unit. The distance between the first and second inflection points is evaluated as the thickness of the electrolyte membrane by the analyzing unit. 1. A method for measuring a thickness of an electrolyte membrane in a membrane electrode assembly containing a first electrode , a second electrode , and the electrolyte membrane sandwiched therebetween , the electrolyte membrane containing a solid polymer , the first electrode including a first electrode catalyst layer containing a metal catalyst , the second electrode including a second electrode catalyst layer containing a metal catalyst , the method comprising the steps of:supplying a detecting medium for detecting the metal catalyst in the first electrode catalyst layer and the second electrode catalyst layer to the membrane electrode assembly in a thickness direction from the first electrode catalyst layer to the second electrode catalyst layer to obtain a thickness direction profile of a detection signal; anddetermining a first inflection point and a second inflection point by an analyzing unit based on an intensity of the detection signal in the thickness direction profile, and evaluating a distance between the first inflection point and the second inflection point as the thickness of the electrolyte membrane.2. The method according to claim 1 , further comprising relatively scanning the membrane electrode assembly by a detecting medium supplying portion configured to supply the detecting medium and a detecting portion configured to detect the metal ...

NON-DESTRUCTIVE BOND LINE THICKNESS MEASUREMENT OF THERMAL INTERFACE MATERIAL ON SILICON PACKAGES

Aspects of the invention include a non-destructive bond line thickness measurement of thermal interface material on silicon packages. A non-limiting example computer-implemented method includes receiving a chip mounted on a laminate and depositing a high-density material on the chip. The computer-implemented method deposits a thermal interface material on the chip and lids the chip, and the laminate with a lid. The computer-implemented method X-rays the lid, the chip, and the laminate to produce an X-ray and measures, using a processor, from the X-ray a bond line thickness of the TIM as a distance from a bottom of the lid to a top surface of the high-density material. 1. A computer-implemented method comprising:receiving a chip mounted on a laminate;depositing a high-density material on the chip;depositing a thermal interface material (“TIM”) on the chip;lidding the chip and the laminate with a lid;X-raying the lid, the chip, and the laminate to produce an X-ray; andmeasuring, using a processor, from the X-ray a bond line thickness (“BLT”) of the TIM as a distance from a bottom of the lid to a top surface of the high-density material.2. The computer-implemented method of claim 1 , wherein the high-density material is a material with sufficiently high mass density as to be detectable by X-rays.35. The computer-implemented method of claim 1 , wherein the high-density material is applied at a thickness of about micrometers.4. The computer-implemented method of claim 1 , wherein the high-density material is applied to a plurality of points on the chip.5. The computer-implemented method of claim 1 , wherein the high-density material is applied as a layer across the chip.6. The computer-implemented method of claim 1 , wherein depositing a high-density material comprises cleaning a surface of the chip.7. The computer-implemented method of claim 6 , wherein depositing a high-density material comprises sputtering a metal seed layer on the surface of the chip.8. The computer- ...

INSPECTION APPARATUS, INSPECTION METHOD, LIBRARY GENERATION APPARATUS, LIBRARY GENERATION METHOD, COMPUTER PROGRAM AND RECORDING MEDIUM

An inspection apparatus is provided with: an irradiating device configured to irradiate a sample in which a plurality of layers are laminated with a terahertz wave; a detecting device configured to detect the terahertz wave from the sample to obtain a detected waveform; and an estimating device configured to estimate a position of a boundary surface of the plurality of layers on the basis of the detected waveform and a library indicating an estimated waveform, the library is generated on the basis of a sample waveform that is the detected waveform obtained by irradiating the sample or a sample member with the terahertz wave, the sample member has specifications that are same as those of the sample. 120-. (canceled)21. An inspection apparatus comprising:An irradiator that is configured to irradiate a sample in which a plurality of layers are laminated with a terahertz wave;a detector that is configured to detect the terahertz wave from the sample to obtain a detected waveform; anda controller that is programmed to estimate a position of a boundary surface of the plurality of layers on the basis of the detected waveform and a library that indicates an estimated waveform of the terahertz wave from the sample,the library being generated on the basis of a sample waveform that is the detected waveform obtained by irradiating the sample or a sample member with the terahertz wave, the sample member having specifications that are same as those of the sample.22. The inspection apparatus according to claim 21 , whereinthe library is generated on the basis of a first pulse waveform that corresponds to an outer surface of the sample or the sample member and that is included in the sample waveform.23. The inspection apparatus according to claim 22 , whereinthe library is generated by a simulation using a reference pulse wave that is set on the basis of the first pulse wave.24. The inspection apparatus according to claim 22 , whereinthe library is generated by a simulation using a ...

X-RAY FLUORESCENCE SPECTROMETER

An X-ray fluorescence spectrometer of the present invention includes a counting time calculation unit () configured to: by a predetermined quantitative calculation method, determine each of quantitative values by using reference intensities of one standard sample and repeatedly perform a procedure of determining each of the quantitative values in a case where only a measured intensity of one of measurement lines is changed by a predetermined value, to calculate a ratio of a change in each of the quantitative values to the predetermined value as a quantitative-value-to-intensity change ratio, the one of the measurement lines having the measured intensity to be changed being different on each repetition of the procedure; and use quantitative-value-to-intensity change ratios calculated thereby for all the measurement lines to calculate a counting time for each of the measurement lines from a quantification precision specified for each of the quantitative values. 1. An X-ray fluorescence spectrometer configured to irradiate a sample with primary X-rays to determine at least one of a quantitative value of a content of a component in the sample and a quantitative value of a thickness of the sample on the basis of measured intensities of secondary X-rays generated ,the X-ray fluorescence spectrometer comprising a counting time calculation unit configured to calculate a counting time for each of measurement lines which are secondary X-rays having intensities to be measured,wherein the counting time calculation unit is configured to:measure a plurality of standard samples to determine calibration curve constants and correction coefficients, or instrument sensitivity constants for a predetermined quantitative calculation method, each of the standard samples being measured in a predetermined provisional counting time;when a quantification precision is specified for each of quantitative values of one standard sample, set a measured intensity of each of the measurement lines as ...

EJECTION VOLUME CORRECTION METHOD FOR INKJET HEAD, EJECTION VOLUME CORRECTION APPARATUS

An aspect of the present invention provides an ejection volume correction method for an inkjet head, including: an arranging step of ejecting functional ink as ink droplets from nozzles of an inkjet head so as to discretely arrange the ink droplets on a front surface of a substrate; a contacting step of filling the functional ink in between a mold and the substrate by causing the mold to contact the ink droplets arranged on the front surface of the substrate; a curing step of curing the filled functional ink so as to generate a functional film ; a separating step of separating the mold from the functional film; a measuring step of measuring a thickness of the functional film; and a correcting step of correcting an ejection volume from the nozzles based on the measured thickness. 1. An ejection volume correction method for an inkjet head , comprising:an arranging step of ejecting functional ink as ink droplets from nozzles of an inkjet head so as to discretely arrange the ink droplets on a front surface of a substrate;a contacting step of filling the functional ink in between a mold and the substrate by causing the mold to contact the ink droplets arranged on the front surface of the substrate;a curing step of curing the filled functional ink so as to generate a functional film;a separating step of separating the mold from the functional film;a measuring step of measuring a thickness of the functional film; anda correcting step of correcting an ejection volume from the nozzles based on the measured thickness.2. The ejection volume correction method for an inkjet head as defined in claim 1 ,wherein, in the arranging step, the ink droplets are arranged by changing the ejection volume from the nozzles in each of prescribed regions on the front surface of the substrate, andthe thickness of the functional film is measured in each of the regions in the measuring step.3. The ejection volume correction method for an inkjet head as defined in claim 2 ,wherein a surface of the ...

MEASUREMENT OF SMALL FEATURES USING XRF

A method for X-ray measurement includes, in a calibration phase, scanning a first X-ray beam, having a first beam profile, across a feature of interest on a calibration sample and measuring first X-ray fluorescence (XRF) emitted from the feature and from background areas of the calibration sample surrounding the feature. Responsively to the first XRF and the first beam profile, a relative emission factor is computed. In a test phase, a second X-ray beam, having a second beam profile, different from the first beam profile, is directed to impinge on the feature of interest on a test sample and second XRF emitted from the test sample is measured in response to the second X-ray beam. A property of the feature of interest on the test sample is computed by applying the relative emission factor together with the second beam profile to the measured second XRF. 1. A method for X-ray measurement , comprising:in a calibration phase, scanning a first X-ray beam, having a first beam profile, across a feature of interest on a calibration sample and measuring first X-ray fluorescence (XRF) emitted, in response to the first X-ray beam, from the feature and from background areas of the calibration sample surrounding the feature;computing, responsively to the first XRF and the first beam profile, a relative emission factor indicative of a relation of XRF emission intensities between the feature and the background areas surrounding the feature;in a test phase, directing a second X-ray beam, having a second beam profile, different from the first beam profile, to impinge on the feature of interest on a test sample and measuring second XRF emitted from the test sample in response to the second X-ray beam; andcomputing a property of the feature of interest on the test sample by applying the relative emission factor together with the second beam profile to the measured second XRF.2. The method according to claim 1 , wherein the computed property is selected from a group of properties ...

MEASUREMENT PROCESSING DEVICE, X-RAY INSPECTION DEVICE, MEASUREMENT PROCESSING METHOD, MEASUREMENT PROCESSING PROGRAM, AND STRUCTURE MANUFACTURING METHOD

A measurement processing device used for an X-ray inspection device includes: a region information acquisition unit that acquires first region information based on X-rays passing through a first region that is a part of a first specimen; a storage unit that stores second region information related to a second region of a second specimen, the second region being larger than the first region; and a determination unit that determines whether or not a region corresponding to the first region is included in the second region, based on the first region information and the second region information. 1. A measurement processing device used for an X-ray inspection device , comprising:a region information acquisition unit that acquires first region information based on X-rays passing through a first region that is a part of a first specimen;a storage unit that stores second region information related to a second region of a second specimen, the second region being larger than the first region; anda determination unit that determines whether or not a region corresponding to the first region is included in the second region, based on the first region information and the second region information.2. The measurement processing device according to claim 1 , whereinthe first region has a predetermined thickness including a predetermined cross section of the first specimen, andthe second region is thicker than the first region.3. The measurement processing device according to claim 2 , whereinthe first specimen and the second specimen have equivalent structures, andthe second region information is information based on design data expressing the structure of the second specimen.4. The measurement processing device according to claim 2 , whereinthe first specimen and the second specimen have equivalent structures, andthe second region information is information based on X-rays passing through the second region of the second specimen.5. The measurement processing device according to ...

METHOD AND DEVICE FOR MEASURING A TUBULAR STRAND

A device for measuring a strand that is tubular includes a first radiation source to emit terahertz radiation in a first measurement region from an inside onto an inner surface of the strand. A first radiation receiver receives terahertz radiation reflected by the strand in a second measurement region. A first evaluation apparatus determines at least one geometric parameter of the strand in the first measurement region. A second radiation source emits terahertz radiation in the second measurement region from an outside onto an outer surface of the strand. A second radiation receiver receives terahertz radiation reflected by the strand in the second measurement region. A second evaluation apparatus determines at least one geometric parameter of the strand in the second measurement region. A third evaluation apparatus determines a change in the at least one geometric parameter of the strand between the first and second measurement regions. 125-. (canceled)26. A method for measuring a tubular strand emerging from an extruder and conveyed in a longitudinal direction , the method comprising:guiding terahertz radiation in a first measurement region from at least one first radiation source from an inside onto an inner surface of the tubular strand;reflecting the terahertz radiation by the tubular strand;receiving the reflected terahertz radiation by at least one first radiation receiver;determining at least one geometric parameter of the tubular strand from the received terahertz radiation in the first measurement region,guiding terahertz radiation in a second measurement region from at least one second radiation source from an outside onto an outer surface of the tubular strand;reflecting the terahertz radiation by the tubular strand;receiving the reflected terahertz radiation by at least one second radiation receiver;determining at least one geometric parameter of the tubular strand from the received terahertz radiation in the second measurement region, wherein the ...

X-ray based metrology of a high aspect ratio hole

A method that includes performing multiple test iterations to provide multiple test results; and processing the multiple test results to provide estimates of a conductivity of each of the multiple bottoms segments. The multiple test iterations includes repeating, for each bottom segment of the multiple bottom segments, the steps of: (a) illuminating the bottom segment by a charging electron beam; wherein electrons emitted from the bottom segment due to the illuminating are prevented from exiting the hole; (b) irradiating, by a probing electron beam, an area of an upper surface of the dielectric medium; (c) collecting electrons emitted from the area of the upper surface as a result of the irradiation of the area by the probing electron beam to provide collected electrons; and (d) determining an energy of at least one of the collected electrons to provide a test result.

METHOD AND DEVICE FOR MEASURING A LAYER THICKNESS OF AN OBJECT

A method and device for measuring the layer thickness of an object. Initially, an object with a layer thickness is provided. Thereupon, at least two measurement steps are performed, where electromagnetic radiation with frequencies in a frequency band associated with the respective measurement step is radiated on the object in each case. The frequency bands are different portions of one bandwidth. Secondary radiation emanating from the boundary surfaces of the object is detected and a measurement signal associated with the measurement step is ascertained. The measurement signals are combined according to the respective frequency bands associated with the measurement steps in order to form an evaluation signal; a fundamental frequency is determined therefrom, and the layer thickness is calculated. A large bandwidth can be realized by a narrow-bandwidth measurement steps by the method. As a result, physical limits of known methods are overcome, and the measurement accuracy is increased. 1. A method for measuring a layer thickness of an object , the method comprising the following steps:providing an object having two boundary surfaces spaced apart by a layer thickness;performing at least two measurement steps, wherein, in each case, electromagnetic radiation with frequencies in a frequency band associated with a respective measurement step is radiated on the object, wherein the frequency bands of the individual measurement steps are different portions of a bandwidth, and secondary radiation emanating from the two boundary surfaces of the object is detected and a measurement signal is ascertained;combining measurement signals of the at least two measurement steps according to the respective frequency bands in order to form an evaluation signal; anddetermining a fundamental frequency of the evaluation signal in order to calculate the layer thickness.2. The method as claimed in claim 1 , wherein the electromagnetic radiation is radiated on the object in pulsed fashion in ...

ASSET LIFE OPTIMIZATION AND MONITORING SYSTEM

Disclosed is a system to evaluate and monitor the status of a material forming part of an asset, such as a refractory furnace. The system is operative to identify flaws and measure the erosion profile and thickness of different materials, including refractory materials of an industrial furnace, using radiofrequency signals. The system is designed to integrate software with a plurality of sensors and additional hardware to collect data during an inspection of the furnace, even in regions of difficult access. Furthermore, the system comprises a software management subsystem configured to implement signal processing techniques to process the data collected and generate reports to visualize the status, estimate the remaining operational life, and determine the level of penetration of molten material into the surrounding layers of the furnace. Moreover, the system's software enables a user to monitor the status of the furnace both locally and remotely. 1. A system for evaluating a status of a material , comprising:a. a sensor head comprising an antenna, a software-controlled device, a radiofrequency module, wherein said antenna is configured to enable a transmission of a first radiofrequency signal from said radiofrequency module onto an area of said material to be evaluated, and to enable a reception by said radiofrequency module of a second radiofrequency signal received from said area of said material to be evaluated, and wherein said software-controlled device comprises first executable computer code configured to operate said radiofrequency module and collect a set of data from said radiofrequency signal received by said radiofrequency module;b. a control unit comprising a computer-based processor having a second executable computer code and a data storage unit, wherein said second executable computer code is configured to control an operation of said sensor head and to manage a communication between said sensor head and said control unit, and wherein said set of ...

System and Method for X-Ray Imaging Spherical Samples for Quality Inspection

An automatic x-ray inspection system and method for inspecting objects, containing a cabinet, a path for an object to roll within the cabinet, from an entry point to an exit point, wherein the path utilizes gravity to alter the position and orientation of the object as it travels along the path, an x-ray imaging system to image the object along the path within the cabinet, wherein the x-ray imaging system has a field of view that captures views of the object along the object's travel, and a computer algorithm to determine a thickness of at least one of a shell and center of the object, wherein if a uniform thickness is determined, the object is tagged as passed or non-passed. 1. An automatic x-ray inspection system for inspecting objects , comprising:a cabinet;a path for an object to roll within the cabinet, from an entry point to an exit point, wherein the path utilizes gravity to alter the position and orientation of the object as it travels along the path;an x-ray imaging system to image the object along the path within the cabinet, wherein the x-ray imaging system has a field of view that captures views of the object along the object's travel; anda computer algorithm to determine a thickness of at least one of a shell and center of the object, wherein if a uniform thickness is determined, the object is tagged as passed.2. The system of claim 1 , wherein if a non-uniform thickness is determined claim 1 , the object is tagged as not-passed.3. The system of claim 1 , wherein the entry and exit ports are steel pipes.4. The system of claim 1 , wherein cabinet is enclosed.5. The system of claim 1 , wherein path provides an indeterminate path.6. The system of claim 1 , wherein if a non-uniform thickness is determined claim 1 , the object is tagged as passed.7. An method for x-ray inspecting objects claim 1 , comprising:rolling an object to roll within an x-ray inspection cabinet, from an entry point to an exit point, wherein the path utilizes gravity to alter the ...

Charged Particle Beam Device and Sample Thickness Measurement Method

Provided is a charged particle beam device which includes a storage unit that stores relationship information indicating a relationship between intensity or an intensity ratio of a charged particle signal obtained when a layer disposed on the sample is irradiated with the charged particle beam and a thickness of the layer; and a calculation unit that calculates the thickness of the layer as a thickness of the sample by using the relationship information and the intensity or the intensity ratio of the charged particle signal. 114.-. (canceled)15. A charged particle beam device , comprising:a charged particle beam column that is configured to emit a charged particle beam;a sample support mechanism that is configured to support a sample to be measured;a detector that is configured to detect a charged particle signal obtained when the sample is irradiated with the charged particle beam;a storage unit that is configured to store in advance relationship information indicating a relationship between intensity or an intensity ratio of a charged particle signal obtained when a reference layer disposed on the sample is irradiated with the charged particle beam and a thickness of the reference layer; anda calculation unit that is configured to calculate the thickness of the reference layer based on the relationship information and the intensity or the intensity ratio of the charged particle signal obtained by irradiating the reference layer with the charged particle beam, whereinthe thickness of the sample is measured based on the calculated thickness of the reference layer.16. The charged particle beam device according to claim 15 , whereinthe intensity ratio of the charged particle signal is a value obtained by dividing each signal intensity value by a signal intensity value in a range in which the signal intensity is constant.17. The charged particle beam device according to claim 15 , whereinthe reference layer is formed of a carbon film, a tungsten film, a platinum film, ...

X-RAY-BASED DETERMINING OF WEIGHTS FOR COATED SUBSTRATES

A measurement apparatus includes an x-ray sensor including an x-ray source having a high voltage power supply for emitting an x-ray spectrum and an x-ray detector for providing a measured x-ray signal value responsive to the x-rays received after transmission through a coated substrate including a sheet material having a coating material thereon. A second sensor is a beta gauge or infrared sensor for providing a second sensor signal that includes data for determining a total weight per unit area of the coated substrate or of the sheet material A computing device receives the measured x-ray signal value and the second sensor signal configured to implement an x-ray based calculation that utilizes absorption coefficients for the coating material and sheet material, the measured x-ray signal value, the x-ray spectrum, and the weight measure as a calculation constraint, for computing at least the weight per unit area of the coating material. 1. A measurement apparatus , comprising:an x-ray sensor including an x-ray source having a high voltage power supply coupled thereto for emitting an x-ray spectrum of x-rays and an x-ray detector for providing a measured x-ray signal value responsive to the x-rays received after being transmitted through a coated substrate comprising a sheet material including a coating material thereon;a second sensor comprising a beta gauge or an infrared (IR) sensor for providing a second sensor signal that includes data for obtaining a weight measure for the coated substrate comprising a total weight per unit area of the coated substrate or a total weight per unit area of the sheet material, anda computing device coupled to receive the measured x-ray signal value and the second sensor signal that includes a processor and a memory, wherein the processor is configured to implement an x-ray based calculation that utilizes absorption coefficients for the coating material and for the sheet material, the measured x-ray signal value, the x-ray spectrum, ...

Measurement and endpointing of sample thickness

The invention relates to a method of determining the thickness of a sample. According to this method, a diffraction pattern image of a sample of a first material is obtained. Said diffraction pattern image comprises at least image values representative for the diffraction pattern obtained for said sample. A slope of said image values is then determined. The slope is compared to a relation between the thickness of said first material and the slope of image value of a corresponding diffraction pattern image of said first material. The determined slope and said relation are used to determine the thickness of said sample.

INSPECTION METHOD AND INSPECTION DEVICE FOR MEMBRANE ELECTRODE ASSEMBLY

An inspection method of a membrane electrode assembly includes a first process of acquiring an X-ray transmission image of the membrane electrode assembly, a second process of identifying a luminance-reduced region having a luminance lower than a luminance of a surrounding region in the X-ray transmission image acquired in the first process, a third process of correcting the luminance of the luminance-reduced region identified in the second process, in accordance with a planar size of the luminance-reduced region, based on a correlation between a planar size of a foreign matter in the membrane electrode assembly and change in luminance due to diffraction of X-rays, and a fourth process of finding a thickness of the foreign matter in the membrane electrode assembly based on the luminance corrected in the third process. 1. An inspection method of a membrane electrode assembly , the inspection method comprising:a first process of acquiring an X-ray transmission image of the membrane electrode assembly;a second process of identifying a luminance-reduced region having a luminance lower than a luminance of a surrounding region in the X-ray transmission image acquired in the first process;a third process of correcting the luminance of the luminance-reduced region identified in the second process, in accordance with a planar size of the luminance-reduced region, based on a correlation between a planar size of a foreign matter in the membrane electrode assembly and change in luminance due to diffraction of X-rays; anda fourth process of finding a thickness of the foreign matter in the membrane electrode assembly based on the luminance corrected in the third process.2. The inspection method according to claim 1 , further comprising a fifth process of finding a three-dimensional size of the foreign matter claim 1 , based on the thickness found in the fourth process and the planar size of the luminance-reduced region.3. The inspection method according to claim 2 , further ...

DEVICE FOR MEASURING THICKNESS OF SPECIMEN AND METHOD FOR MEASURING THICKNESS OF SPECIMEN

A method for measuring the thickness of a specimen, according to an embodiment, can measure the thickness of a specimen having multiple layers in a contactless and non-destructive manner. In addition, when the refractive indexes of materials forming the respective layers are already known, the thicknesses of the respective layers can be integrally measured through differences in reflection times of terahertz waves with respect to the respective layers of the specimen, thereby measuring the thickness of the specimen, such that the time taken for measuring the thickness of the specimen can be reduced. Furthermore, when the refractive indexes of the materials forming the respective layers are not known, the refractive indexes of the respective layers can be measured through differences in transmission times and reflection times of terahertz waves with respect to the respective layers of the specimen, and at the same time, the thicknesses of the respective layers can be measured through differences in transmission times or reflection times of terahertz waves with respect to the respective layers of the specimen, so that the thickness of various specimens can be measured. As such, the present invention has a wide range of applications. 1. A specimen thickness measuring method , the method comprising:emitting, a first terahertz wave toward a first area of an upper portion of a first layer of a specimen including the first layer and a second layer, wherein a lower portion of the second layer of the specimen contacts at least part of the upper portion of the first layer, and the upper portion of the first layer includes the first area formed by removing at least part of the second layer;receiving a first reflected terahertz wave reflected by the specimen;emitting a second terahertz wave toward a second area of an upper portion of the second layer;receiving a second reflected terahertz wave reflected by the specimen;storing refractive indexes of the first layer and the ...

ASSISTED CORROSION AND EROSION RECOGNITION

Systems, methods, and computer readable medium are provided for determining a wall loss measurement associated with corrosion and/or erosion present within an insulated pipe. A inspection image is acquired for a pipe wall of an insulated pipe at a first location and used to determine an inspection thickness of the pipe wall at the first location. An amount of wall loss measurement can be determined based on a difference of a nominal thickness for the pipe wall at the first location and the determined inspection thickness. The wall loss measurement can characterize an amount of wall material lost due to corrosion and/or erosion present in the pipe wall at the first location. The wall loss measurement can be output for further processing and/or display. 1. A method comprising:acquiring an inspection image of a pipe wall of an insulated pipe at a first location;determining an inspection thickness of the pipe wall at the first location based on the inspection image;determining a wall loss measurement of the pipe wall at the first location, the wall loss measurement determined based on a difference of a nominal thickness of the pipe wall at the first location and the determined inspection thickness, the wall loss measurement characterizing an amount of wall loss in the insulated pipe at the first location; andoutputting the wall loss measurement.2. The method of claim 1 , further comprising claim 1 ,determining, at the first location and based on the inspection image, an attenuation coefficient of an insulation of the insulated pipe at a first radial distance of the insulated pipe, an attenuation coefficient of the pipe wall at a second radial distance of the insulated pipe, and an attenuation coefficient of a fluid within the insulated pipe at a third radial distance of the insulated pipe; anddetermining the inspection thickness of the pipe wall at the first location based on applying the attenuation coefficient of the insulation, the attenuation coefficient of the pipe ...

COMPUTER IMPLEMENTED METHOD FOR DETERMINING INTRINSIC PARAMETER IN A STACKED NANOWIRES MOSFET

Embodiments of the invention determine intrinsic parameters of stacked nanowires/nanosheets GAA MOSFETs comprising Nnanowires and/or nanosheets, each nanowire/nanosheet being surrounded in an oxide layer, the oxide layers being embedded in a common gate, wherein the method comprises the following steps: 1. A computer implemented method for determining at least one intrinsic parameter of a stacked nanowires/nanosheets gate-all-around (GAA) metal oxide semiconductor field effect transistor (MOSFET) comprising Nnanowires and/or nanosheets , each nanowire/nanosheet being surrounded in an oxide layer , the oxide layers being embedded in a common gate , wherein the method comprises the following steps: [{'sub': 'w', 'the number of stacked nanowires/nanosheets N,'}, {'sub': w,i', 'w, 'the width W, of the nanowire/nanosheet number i, i being an integer from 1 to N,'}, {'sub': w,i', 'w, 'the thickness of the nanowire/nanosheet H, number i, i being an integer from 1 to N,'}, {'sub': w,i', 'w', 'w,i, 'the corner radius Rof the nanowire/nanosheet number i, i being an integer from 1 to N, R;'}], 'measuring by at least one imaging method the following geometrical parameters of the MOSFET{'sub': T', 'T', 'B, 'calculating, using a physical processor and the measured geometrical parameters, a surface potential x normalized by a thermal voltage ϕgiven by ϕ=kT/q;'}measuring electrically the total gate capacitance for a plurality of gate voltages;determining, using the measured total gate capacitance and the calculated normalized surface potential, the at least one intrinsic parameter of the stacked nanowires/nanosheets MOSFET.3. A computer implemented method according to claim 2 , further comprising a step of determining claim 2 , using a physical processor claim 2 , constants Band Δaccording to geometry parameters of the stacked nanowires/nanosheets GAA MOSFET and process parameters claim 2 , wherein the step of determining constants Band Δcomprises a step of:{'sub': 'effnw,i', ' ...

METHOD AND DEVICE FOR MEASURING TREAD DEPTH OF A TIRE

A method of measuring a tread depth of a tire includes transmitting at least one radio wave from a transmitter through a tread of the tire. The at least one radio wave reflected from a road surface is received with a receiver. The tread depth of the tire is determined based on comparing the at least one radio wave reflected from the road surface with the at least one radio wave from the transmitter. 1. A method of measuring a tread depth of a tire , the method comprising:transmitting at least one radio wave from a transmitter through a tread of the tire;receiving the at least one radio wave reflected from a road surface with a receiver; anddetermining the tread depth of the tire based on comparing the at least one radio wave reflected from the road surface with the at least one radio wave from the transmitter.2. The method of claim 1 , wherein determining the tread depth of the tire is based on at least one of measuring an elapsed time between when the at least one radio wave was transmitted by the transmitter and when the at least one radio wave reflected from the road surface was received by the receiver or measuring a phase of the at least one radio wave that was transmitted by the transmitter and a phase of the at least one radio wave reflected from the road surface and received by the receiver.3. The method of claim 2 , wherein the at least one radio wave includes a plurality of radio waves.4. The method of claim 3 , including generating a distance data set based the plurality of radio waves.5. The method of claim 4 , wherein the distance data set includes distances obtained during a predetermined degree of rotation of the tire.6. The method of claim 5 , wherein the predetermined degree of rotation of the tire is determined by an accelerometer.7. The method of claim 5 , wherein the predetermined degree of rotation of the tire is between negative 45 degrees and positive 45 degrees relative a vertical line from the road surface through a center of the tire.8. The ...

Feed-Forward of Multi-Layer and Multi-Process Information using XPS and XRF Technologies

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate. 1. A method of thin film characterization , the method comprising:measuring first XPS and/or XRF intensity signals for a sample having a first layer above a substrate, the first XPS and/or XRF intensity signals including information for the first layer and for the substrate;determining a thickness of the first layer based on the first XPS and/or XRF intensity signals;combining the information for the first layer and for the substrate to estimate an effective substrate;measuring second XPS and/or XRF intensity signals for a sample having a second layer above the first layer above the substrate, the second XPS and/or XRF intensity signals including information for the second layer, for the first layer and for the substrate; anddetermining a thickness of the second layer based on the second XPS and/or XRF intensity signals, the thickness accounting for the effective substrate.2. The method of claim 1 , wherein combining the information for the first layer and for the substrate to estimate the effective substrate comprises combining signals in a global claim 1 , simultaneous fit by direct or model-based methods.3. The method of claim 1 , wherein estimating the effective substrate comprises ...

Method to Radiographically Determine Geometrical Parameters and/or Substance State of an Object Under Study

The present invention relates to a method to determine geometrical parameters of an object under study by radiography, the object can be described geometrically, wherein intercepts that go through the material of the object under study can be determined from a projection of the object—e.g. a tube—imaged by an X- or gamma-radiation source if exposition data of the radiographic image are available. These intercepts that go through the material of the object—i.e. the intercept curves—allow that the object under study—e.g. the tube—have a dimension that is larger than the dimension of the device (film/detector) used to take the radiographic image. During the course of said method, the source of radiation, the object under study and the device (film/detector) used to take the radiographic image are in a fixed position. 1200200200200400. A method to determine geometrical parameters and/or a material state of an object () to be inspected by an in-situ taken radiographic image of the object () , said object () having geometrical and radiation physical parameters that can be described mathematically in a radiographic arrangement with known nominal parameters of the object () , a source (γ) of radiation , and a radiation receiving device () , the method comprising:{'b': 200', '100, 'irradiating the object () to be inspected by an imaging radiation () emitted by said source (γ) of radiation,'}{'b': 200', '400, 'receiving radiation passing through said object () by said radiation receiving device (),'}{'b': 200', '400', '400', '400, 'displaying the object () to be inspected by said radiation receiving device () as a radiographic image formed by a change in the radiation receiving device () being essentially proportional to an amount of radiation absorbed by said radiation receiving device (),'}{'b': 200', '400, 'maintaining the source (γ) of radiation, the object () to be inspected and the radiation receiving device ()—within acceptable tolerance—in a mutually fixed geometrical ...

Depth Determination in X-ray Backscatter System Using Frequency Modulated X-Ray Beam

An X-ray backscatter imaging system uses frequency modulated X-rays to determine depth of features within a target. An X-ray source generates X-ray radiation modulated by a frequency-modulated bias current. The X-ray radiation impinges upon and is backscattered from multiple depths within the target. A scintillating material receives the backscattered X-rays and generates corresponding photons. A photodetector, having gain modulated by the frequency modulation signal from the local oscillator, receives the photons from the scintillating material and generates an analog output signal containing phase delay information indicative of the distance travelled by the X-rays backscattered from multiple depths within the target. The analog output signal is sampled by an analog-to-digital converter to create a digital output signal. A computer processor performs a discrete Fourier transform on the digital output signal to provide target depth information based on the phase delay information. 1. An X-ray backscatter imaging system comprising:a modulation signal source for generating a frequency modulation signal;a first bias signal source for generating a first bias signal;means for modulating the first bias signal with the frequency modulation signal to provide a first frequency-modulated bias signal;an X-ray radiation source for receiving the first frequency-modulated bias signal and generating X-ray radiation modulated by the first frequency-modulated bias signal, wherein the X-ray radiation impinges upon and penetrates a target, and is backscattered from multiple depths within the target;scintillating material for receiving X-ray radiation backscattered from the multiple depths within the target and for generating photons corresponding to the backscattered X-ray radiation;a second bias signal source for generating a second bias signal;means for modulating the second bias signal with the frequency modulation signal to provide a second frequency-modulated bias signal;photon ...

METHOD OF TESTING BLOCKING ABILITY OF PHOTORESIST BLOCKING LAYER FOR ION IMPLANTATION

A method of testing a blocking ability of a photoresist blocking layer for ion implantation, comprising: forming a photoresist blocking layer (S) on a substrate; measuring a first thickness (S) of the photoresist blocking layer at an arbitrary position on the substrate, the first thickness being a thickness of the photoresist blocking layer; implanting a predetermined amount of ions (S) into the photoresist blocking layer; measuring a second thickness (S) of the photoresist blocking layer at the arbitrary position, the second thickness being a thickness of a hardened portion in the photoresist blocking layer; and determining a blocking ability (S) of the photoresist blocking layer with the first thickness for ion implantation according to the second thickness. This method does not need to use a testing silicon slice during the process of testing the blocking ability of a photoresist blocking layer for ion implantation, and thus can reduce required costs during the testing process. 1. A method of testing a blocking ability of a photoresist blocking layer for ion implantation , comprising:forming a photoresist blocking layer on a substrate;measuring a first thickness of the photoresist blocking layer at an arbitrary position on the substrate, the first thickness being a thickness of the photoresist blocking layer;implanting a predetermined amount of ions into the photoresist blocking layer;measuring a second thickness of the photoresist blocking layer at the arbitrary position, the second thickness being a thickness of a hardened portion in the photoresist blocking layer; anddetermining blocking ability of the photoresist blocking layer with the first thickness for ion implantation based on the second thickness.2. The method of testing a blocking ability of a photoresist blocking layer for ion implantation as claimed in claim 1 , wherein a prebaking process is performed to the substrate; a photoresist layer is formed on the substrate subsequent to the prebaking ...

METHOD OF DETECTING AND CALCULATING HEIGHT OF A JUMP

The invention pertains to a method of detecting and calculating height of a jump performed by an individual, comprising the following steps: 1. A method of detecting and calculating height of a jump performed by an individual , comprising the following steps:A detection of a reception subsequent to the jump, this step comprising a sub-step of detecting a pressure spike of amplitude greater than a first threshold amplitude, within pressure measurements provided by a pressure sensor embedded aboard a watch worn on the wrist of the individual,A calculation of a height of the jump by differencing a starting altitude corresponding to a last stable pressure measured before the pressure spike and a finishing altitude corresponding to a first stable pressure measured after the pressure spike via the pressure sensor, a stable pressure being defined as a pressure whose variations do not exceed 0.1 hectopascals for at least 2 seconds.2. The method according to claim 1 , in which the step of detecting a reception comprising a sub-step of detecting an acceleration spike of amplitude greater than a second threshold amplitude claim 1 , on the basis of acceleration measurements provided by a three-axis accelerometer embedded aboard the watch claim 1 , and a sub-step of comparing the instant associated with the acceleration spike and the instant associated with the pressure spike.3. The method according to claim 2 , in which the second threshold amplitude is greater than 2 g claim 2 , where g is the acceleration of gravity at the Earth's surface.4. The method according to claim 1 , in which the first threshold amplitude is greater than 10 hectopascals. This application claims priority from European patent application No. 16203363.3 filed on Dec. 12, 2016, the entire disclosure of which is hereby incorporated herein by reference.The invention pertains to a method of detecting and calculating height of a jump. The method is particularly suitable for detecting and calculating height of ...

METHOD FOR STUDYING A ZONE OF AN OBJECT SO AS TO DETERMINE A MASS-THICKNESS AND A COMPOSITION THEREOF BY USING AN ELECTRON BEAM AND MEASUREMENTS OF X-RAY RADIATION INTENSITY

A method for studying a zone of an object, the zone exhibiting a mass-thickness and comprising at least one chemical element, the method including a step of exposing a part of the zone of the object to an electron beam, a step of identifying each chemical element present in the said zone by virtue of the exposure step, a step of measuring, for each chemical element identified, a corresponding intensity of an X-ray radiation emergent from the object on account of the said exposure step, a step of determining a value of the said mass-thickness dependent on each measurement step, and a step of determining a value of the concentration of each chemical element identified using the said value of the mass-thickness determined. 6. Method according to claim 5 , wherein the parameter n is determined by the following relation n=nLn +n claim 5 , the parameters nand nbeing given by a chart giving a value of n as a function of whatever a power of the electron beam.8. Method according to claim 5 , wherein the term βis determined by supposing that claim 5 , for any thickness greater than or equal to a maximum ionization depth zof the corresponding chemical element claim 5 , the intensity of the X-ray radiation generated in the object is equivalent to that of the object if the object is opaque to the electron beam.12. Method according to claim 11 , comprising a step of determining a parameter corresponding to the minimum value between and z and defined by the following relation: =Min( claim 11 ,z).17. Method for studying an object comprising:dividing the object into several zones to be studied,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'implementing, for each zone, the method according to with a view to determining the corresponding mass-thickness value and, for each element of the said zone, the corresponding concentration value.'}18. Method according to claim 1 , wherein in the initialization step the intermediate value of the mass-thickness ρzand the intermediate value of ...

X-Ray Scatterometry Metrology For High Aspect Ratio Structures

Methods and systems for characterizing dimensions and material properties of high aspect ratio, vertically manufactured devices using transmission, small-angle x-ray scattering (T-SAXS) techniques are described herein. Exemplary structures include spin transfer torque random access memory (STT-RAM), vertical NAND memory (V-NAND), dynamic random access memory (DRAM), three dimensional FLASH memory (3D-FLASH), resistive random access memory (Re-RAM), and PC-RAM. In one aspect, T-SAXS measurements are performed at a number of different orientations that are more densely concentrated near the normal incidence angle and less densely concentrated at orientations that are further from the normal incidence angle. In a further aspect, T-SAXS measurement data is used to generate an image of a measured structure based on the measured intensities of the detected diffraction orders. In another further aspect, a metrology system is configured to generate models for combined x-ray and optical measurement analysis. 1. A metrology system comprising:an x-ray illumination source configured to generate an amount of x-ray radiation;an x-ray illumination optics subsystem configured to illuminate a measurement target formed on a wafer surface with a focused beam of the amount of x-ray radiation at a plurality of orientations with respect to the measurement target, wherein the measurement target includes one or more high aspect ratio structures, and wherein the plurality of different orientations are more densely concentrated near normal to the wafer surface and less densely concentrated at orientations that are further from normal to the wafer surface;an x-ray detector configured to detect one or more intensities each associated with one or more diffraction orders of an amount of radiation scattered from the measurement target in response to the incident beam of x-ray radiation at each orientation; and 'determine a value of a parameter of interest associated with a model of the ...

DEVICE AND METHOD APPLICABLE FOR MEASURING ULTRATHIN THICKNESS OF FILM ON SUBSTRATE

The present disclosure relates to a device and a method for measuring a thickness of an ultrathin film on a solid substrate. The thickness of the target ultrathin film is measured from the intensity of the fluorescence converted by the substrate and leaking and tunneling through the target ultrathin film at low detection angle. The fluorescence generated from the substrate has sufficient and stable high intensity, and therefore can provide fluorescence signal strong enough to make the measurement performed rapidly and precisely. The detection angle is small, and therefore the noise ratio is low, and efficiency of thickness measurement according to the method disclosed herein is high. The thickness measurement method can be applied into In-line product measurement without using standard sample, and therefore the thickness of the product can be measured rapidly and efficiently. 1. A device for measuring a thickness of a target ultrathin film on a substrate , and the device comprising:{'b': 1', '1, 'a radiation source configured to project an excitation radiation toward an upper surface of the target ultrathin film with an incident angle θ with respect to the upper surface, wherein the incident angle θ is near 90°; and'}{'b': '2', 'a fluorescence X-ray detector configured to measure a fluorescence X-ray converted from the excitation radiation by the substrate with a grazing detection angle θ with respect to the upper surface, over a preset grazing angular range.'}2. The device according to claim 1 , wherein the target ultrathin film has the thickness of a few nanometers (nm) or less.3. The device according to claim 1 , wherein the thickness of the target ultrathin film is 0.2 nm to 2 nm.4. The device according to claim 1 , wherein an energy of the excitation radiation is sufficiently high to excite the fluorescence X-ray from the substrate.5. The device according to claim 1 , wherein the excitation radiation comprises an X-ray beam or an electron beam.6. The device ...

CHARACTERIZING A SAMPLE BY MATERIAL BASIS DECOMPOSITION

The invention relates to a method for characterizing a sample, by estimating a plurality of characteristic thicknesses, each being associated with a calibration material, comprising the following steps: 1. A method for improving accuracy of a characterization of a sample by material basis decomposition , the method comprising:acquiring, by circuitry comprising a memory and a detector connected to a processor, a spectrum transmitted through the sample, said spectrum being an energy spectrum defined by a number of photons transmitted through the sample in each channel of a plurality of energy channels located in an X spectral band and/or a gamma spectral band;acquiring, by said memory, calibration spectra, wherein each of the calibration spectra corresponds to a calibration spectrum transmitted through a stack including plural gauge blocks, each gauge block of said stack consisting of a different calibration material, and said stack consisting of a different set of thicknesses for each of the gauge blocks consisting of a different calibration material;calculating, by said circuitry, values of a likelihood function from said acquired calibration spectra and from the spectrum transmitted through the sample;determining, by said circuitry, a maximum likelihood value from among the calculated values of the likelihood function, the determined maximum likelihood value corresponding to an acquired calibration spectrum corresponding to a stack of gauge blocks, each gauge block of the stack consisting of a different calibration material, the acquired calibration spectrum being most similar to the acquired spectrum transmitted through the sample; andoutputting, from the circuitry, a plurality of estimated characteristic thicknesses, each of the outputted estimated characteristic thicknesses being associated with a different calibration material, from the stack of gauge blocks of the acquired calibration spectrum corresponding to said determined maximum likelihood value.2. The ...

X-RAY SURFACE ANALYSIS AND MEASUREMENT APPARATUS

This disclosure presents systems for x-ray diffraction/scattering measurements that have x-ray flux and x-ray flux density several orders of magnitude greater than existing x-ray technologies. These may therefore be useful for applications such as structural analysis and crystallography. 1. An x-ray system for analyzing a specimen , comprising:at least one x-ray source comprising: [ 'has a source size less than 20 micrometers in at least one direction,', 'each of the x-ray generating sub-sources'}, 'and is aligned along a predetermined axis', 'at least two of the plurality of x-ray generating sub-sources accumulate within a predetermined divergence angle relative to the predetermined axis; and', 'so that x-rays generated from'}, 'additionally comprising:', 'having an optical axis aligned relative to the predetermined axis,', 'an x-ray optical system'}, 'said optical system positioned to collect diverging x-rays accumulated from said at least two of the plurality of the of x-ray generating sub-sources in the x-ray source', 'and to condition and create an x-ray beam with predetermined properties;', 'said optical system additionally comprising a central beam stop positioned to block x-rays propagating parallel to the optical axis;', with a grazing angle of less than 5 degrees', 'onto an area of a surface of a specimen;, 'a means to direct the x-ray beam to be incident'}, 'at least one detector', 'which detects the intensity of the x-rays emerging from the specimen and generates electrical signals; and', 'a signal processor to analyze the electrical signals', 'to obtain information about at least one of:', 'composition, concentration, quantity, and film thickness., 'a plurality of x-ray generating sub-sources, in which'}2. The x-ray system of claim 1 , 'to detect x-rays that are diffracted by the specimen;', 'in which said at least one detector is positioned'}and additionally comprising: 'from the surface of the specimen.', 'at least one additional detector to detect x- ...

METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS

A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure. 1. A monitoring system for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer , the system comprising a computer system comprising data input and output utilities , a memory utility , and a data processor and analyzer utility , wherein:said data input utility is configured to receive measured data comprising data indicative of optical measurements performed on said IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on said IC and data ...

SILICON GERMANIUM THICKNESS AND COMPOSITION DETERMINATION USING COMBINED XPS AND XRF TECHNOLOGIES

Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both. 1. A method for characterizing a silicon germanium film , said method comprising:generating an X-ray beam;positioning a sample in a pathway of said X-ray beam;collecting an X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam;collecting an X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam; anddetermining a thickness of the silicon germanium film from the XRF signal and the XPS signal.2. A method for characterizing a silicon germanium film , said method comprising:generating an X-ray beam;positioning a sample in a pathway of said X-ray beam;collecting an X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam;collecting an X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam; anddetermining a composition of the silicon germanium film from the XRF signal and the XPS signal.3. A system for characterizing a silicon germanium film , said system comprising:an X-ray source for generating an X-ray beam;a sample holder for positioning a sample in a pathway of said X-ray beam;a first detector for collecting an X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam; anda second detector for collecting an X-ray ...

HYBRIDIZATION FOR CHARACTERIZATION AND METROLOGY

A computer-implemented method for measuring a parameter of a semiconductor. A non-limiting example of the computer-implemented method includes receiving, using a processor, a raw signal from a first tool representing a measured parameter of a semiconductor device. The method also receives, using the processor, data on the measured parameter from a second tool, and calculates, using the processor, the measured parameter based on the data received from the second tool and on a constraint based on the raw signal from the first tool. 1. A computer-implemented method comprising:receiving, using a processor, a raw signal from a first tool representing a measured parameter of a semiconductor device;receiving, using the processor, data on the measured parameter from a second tool; andcalculating, using the processor, the measured parameter based on the data received from the second tool and on a constraint based on the raw signal from the first tool.2. The computer-implemented method of claim 1 , wherein the first tool comprises an X-ray tool.3. The computer-implemented method of claim 1 , wherein the second tool comprises an optical tool.4. The computer-implemented method of claim 1 , wherein the constraint based on the raw signal from the first tool is determined by the equation I=f(t claim 1 ,t claim 1 ,x) claim 1 , where I is a count associated with a Germanium L alpha signal claim 1 , t is thickness claim 1 , x is concentration of Germanium claim 1 , and n refers to a layer of a nanosheet.5. The computer-implemented method of claim 4 , wherein the calculation of the parameter uses a library search technique.6. The computer-implemented method of claim 4 , wherein the calculation of the parameter uses an optimization technique.7. The computer-implemented method of claim 4 , wherein the second tool comprises an optical scatterometer.8. A system comprising:a memory; and receive a raw signal from a first tool representing a measured parameter of a semiconductor device;', ' ...

METHOD FOR MEASURING WAVE HEIGHT BY MEANS OF AN AIRBORNE RADAR

A method for determining wave height by means of a radar carried by an aircraft, the method implementing the following steps: a first step of pointing the antenna of the radar; a second step of determining the clutter acquisition plan according to the altitude of the aircraft; a third step of determining, for each clutter zone defined by the acquisition plan, two Doppler parameters PARA1 and PARA2 characterising the zone as a whole; a fourth step of calculating the average values of the parameters PARA1 and PARA2 over all of the zones in question; and a fifth step of estimating the wave height from the averages of the parameters PARA1 and PARA2. The wave height estimated in this way is transmitted to the aircraft and used to determine the conditions for the water landing of the aircraft. 1. A method for determining the height of the waves using a radar borne by an aircraft , comprising the following steps:a first step of pointing the antenna of the radar, said pointing being performed in such a way that the direction targeted by the radar corresponds to the direction of origin of the swell;a second step of determining the plan of acquisition of the clutter, said plan defining, as a function of the altitude of the aircraft, the number of zones to be acquired, the time of acquisition for each zone and the position and the length of the zones;a third step of determining, for each zone of clutter defined by the acquisition plan, two parameters PARA1 and PARA2 corresponding respectively, for a given zone, to the standard deviation of the average Doppler frequencies calculated, for each distance cell, over all of the recurrences forming the zone considered and to the ratio of the first parameter PARA1 to the standard deviation of the average Doppler frequency calculated for each recurrence over all of the distance cells forming the zone considered;a fourth step of calculating, for each of the parameter PARA1 and PARA2 calculated in the third step, the average value of ...

APPARATUS FOR DETERMINING THICKNESS OF LINING LAYER

An apparatus () for determining thickness of refractory material () lining a metal vessel () is disclosed. The apparatus includes a radiation source () for emitting radiation through a metal wall of the vessel and into the refractory material, wherein some of the radiation is scattered by the refractory material, and a radiation detector () for detecting radiation scattered by the refractory material through the wall of the vessel. A converter provides an output signal dependent on the quantity of radiation scattered by the refractory material through the wall of the vessel and detected by the radiation detector. 126-. (canceled)27. An apparatus for determining thickness of refractory material lining a metal vessel , the apparatus comprising:a source of gamma radiation for emitting gamma radiation through a metal wall of the vessel and into said lining material, wherein some of said gamma radiation is scattered by said lining material;a radiation detector for detecting said gamma radiation scattered by said lining material through the wall of the vessel; anda converter for providing at least one output signal dependent on the quantity of radiation scattered by said lining material through the wall of the vessel and detected by said radiation detector.28. The apparatus according to claim 27 , wherein the radiation detector comprises at least one scintillation crystal and at least one photomultiplier.29. The apparatus according to claim 27 , further comprising a first adjustor for adjusting a distance between the source of gamma radiation and the radiation detector.30. The apparatus according to claim 27 , further comprising a second adjustor for adjusting a distance of the source of gamma radiation and/or radiation detector from the wall of the vessel.31. The apparatus according to claim 27 , further comprising a shield for attenuating radiation transmitted directly from said source of gamma radiation to said radiating detector.32. The apparatus according to claim 31 ...

Sensor System For Characterizing A Coating Such As A Paint Film By THz Radiation

A coating facility includes a coating unit for applying a coating layer to a body; and a sensor system for characterizing a coating of the body, the coating including the applied coating layer, in a non-contact manner by use of THz radiation. The sensor system includes a THz system, a processing unit and a positioning system. The THz system includes a light source generating a source light radiation; a flexible first radiation guide cable transmitting the source light radiation; a THz emitter having a THz radiation generator coupled to the light source via the flexible first radiation guide cable for receiving the source light radiation from the light source and adapted for generating outgoing THz radiation from the source light radiation, and a THz optical system for directing the outgoing THz radiation towards the coated body; and a THz detector for detecting incoming THz radiation having interacted with the coating. 2. The coating facility according to claim 1 , wherein the movable unit further carries the THz detector so that by moving the movable unit the THz emitter and the THz detector are positioned relative to the body.3. The coating facility according to claim 2 , the sensor system further comprising a flexible second radiation guide cable and a light delaying unit adapted to delay the light source radiation by a variable delay time claim 2 , whereinthe THz detector comprises a THz radiation receiver and a THz optical system for directing the THz radiation from the body to the THz radiation receiver, whereinthe THz radiation receiver is coupled to the light source via the flexible second radiation guide cable and the light delaying unit for receiving the delayed source light radiation from the light source.4. The coating facility according to claim 1 , wherein the positioning system is adapted for moving the movable unit with at least 2 degrees of freedom.5. The coating facility according to claim 1 , the sensor system further comprising an actuator system ...

METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF). 1. A method for determining a property of a layer of an integrated circuit (IC) , the layer being formed over an underlayer , comprising the steps of:irradiating the IC to thereby generate emission from the IC;collecting the emission from the IC and determining the kinetic energy of emitted species within the emission to thereby calculate emission intensity of various species emitted from the layer and emission intensity of species emitted from the underlayer;calculating a ratio of the emission intensity of species emitted from the layer and emission intensity of species emitted from the underlayer;using the ratio to determine material composition or thickness of the layer.2. The method of claim 1 , wherein the steps of irradiating IC and collecting emission is performed using one of x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).3. The method of claim 1 , wherein the steps of irradiating IC comprises irradiating the IC with ultraviolet radiation.4. The method of claim 1 , wherein the steps of irradiating IC comprises irradiating the IC with monochromatic radiation.5. The method of claim 1 , wherein generate emission from the IC comprises ejecting ...

X-ray imaging apparatus and control method thereof

The present disclosure provides an X-ray imaging apparatus and control method thereof, by which the user's hand is photographed and information about a thickness of a subject, information about a photographed spot or information about a photographing angle may be easily obtained from the photographed image. According to an aspect of an example embodiment, there is an X-ray imaging apparatus comprising an X-ray source configured to generate and irradiate an X-ray; a photographing device equipped in the X-ray source for capturing a camera image; and a controller configured to detect a plurality of indicators from the camera image, calculate a thickness of an X-raying portion of a subject based on a distance between the plurality of indicators, and controlling an X-ray irradiation condition based on the thickness of the X-raying portion.

BLADE PORTIONER CALIBRATION

Calibrating the operation of a cutter used in a portioning system to cut workpieces into portions, wherein the workpiece is carried along a driven conveyance device past a scanner and then to a cutting apparatus. The calibration method employs a correction algorithm to correct for variables or limitations in the condition of one or more components of the portioning system and/or variations or limitations in the operation or operational capabilities of the portioning system. The correction algorithm may also factor in the physical condition, configuration, or composition of the workpieces being portioned, as well as whether the workpieces move on the conveyance device prior to and/or during the portioning operation. 1. A method for calibrating a portioning system having a conveyance device for conveying workpieces past a scanner used to physically characterize the workpiece and then to a cutting device to cut the workpiece into portions , the method comprising:a. operating the portioning system with respect to representative workpieces carried on the conveyance device by scanning the sample workpieces at the scanner;b. using the data from the scanner to physically characterize the workpieces as well as the portions to be cut from the workpieces with respect to one or more selected physical parameters;c. portioning the sample workpieces using the cutting device;d. physically measuring the cut portions for the one or more selected physical parameters;e. determining the variance between the one or more selected physical parameters of the cut portion as determined by the scanner and as physically measured; andf. adjusting the operation of the cutting device based on the variance between the one or more selected physical parameters as determined by the scanner and as physically measured.2. The method according to claim 1 , wherein the operation of the cutting device is adjusted by adjusting the timing of the cuts of the workpiece made by the cutting device.3. The method ...

FILM THICKNESS MEASUREMENT DEVICE

A measurement head () irradiates a film () of a product substrate () with primary X-rays to detect fluorescent X-rays generated from the film (). Analysis means () obtains thickness of the film () from intensity of the fluorescent X-rays detected by the measurement head (). 1. A film thickness measurement device , comprising:{'b': '1', 'a base ();'}{'b': 2', '1', '10, 'a substrate stage () which is provided on the base () and on which a product substrate () having a film is placed;'}{'b': 4', '2', '1', '2, 'a gantry () that extends in a first direction (A) with respect to the substrate stage () and is installed in the base () so as to be movable in a second direction (B) with respect to the substrate stage ();'}{'b': 5', '4, 'a slider () that is installed in the gantry () so as to be movable in the first direction (A);'}{'b': 23', '5', '12', '10', '2', '12, 'a measurement head () that is fixed to the slider () and irradiates a film () of the product substrate () placed on the substrate stage () with primary X-rays to detect fluorescent X-rays generated from the film (); and'}{'b': 33', '12', '23, 'analysis means () that obtains thickness of the film () from intensity of the fluorescent X-rays detected by the measurement head ().'}2. The film thickness measurement device according to claim 1 , further comprising:{'b': 21', '5', '10', '2, 'a camera () that is fixed to the slider () and detects an alignment mark of the product substrate () placed on the substrate stage ();'}{'b': 31', '10', '2', '21, 'substrate position correction means () that corrects position information of the product substrate () placed on the substrate stage () based on a detection result of the camera ();'}{'b': 22', '5', '10', '2, 'a displacement sensor () that is fixed to the slider () and measures distance to the product substrate () placed on the substrate stage (); and'}{'b': 32', '23', '22', '10', '2', '23, 'head position adjustment means () that adjusts a position of the measurement head ...

Pattern Height Measurement Device and Charged Particle Beam Device

A purpose of the present invention is to provide: a pattern height measurement device capable of high-precision measurement of the dimensions of a fine pattern, in the height direction; and a charged particle beam device. In order to achieve the purpose, this pattern height measurement device comprises a calculation device that finds the dimensions of a sample, in the height direction, on the basis of first reflected light information obtained by dispersing light that is reflected when the sample is irradiated with light. The calculation device: finds second reflected light information on the basis of a formula for the relationship between the value for the dimension in the sample surface direction of a pattern formed upon the sample, obtained by irradiation of a charged particle beam on the sample, the value for the dimension in the height direction of the sample, and reflected light information; compares a second reflected light intensity and the first reflected light information; and outputs, as the dimension in the height direction of the pattern, the value for the dimension in the height direction of the sample in the second reflected light information when the first reflected light information and the second reflected light information fulfil prescribed conditions. 1. A pattern height measurement device that is provided with a calculation device that calculates a dimension of a sample in a height direction , on the basis of first reflected light information acquired by dispersing reflected light produced when the sample is irradiated with light ,wherein the calculation device calculates second reflected light information on the basis of a formula for a relationship between a value for dimension of a pattern formed on the sample in a surface direction of the sample, which is obtained by irradiating the sample with a charged particle beam, a value for a dimension of the sample in the height direction, and reflected light information, compares the second ...

Methods of detecting flow line deposits using gamma ray densitometry

A method of measuring a flow line deposit comprising: providing a pipe comprising the flow line deposit; measuring unattenuated photon counts across the pipe; and analyzing the measured unattenuated photon counts to determine the thickness of the flow line deposit and associated systems.

SENSING SYSTEM AND METHOD FOR MEASURING A PARAMETER OF AT LEAST A DIELECTRIC SUBSTANCE IN A TANK; LAYER THICKNESS AND DIELECTRIC PROPERTY MEASUREMENTS IN MULTILAYER SYSTEMS

The sensing system for measuring a parameter of a dielectric substance generally has a tank for containing the dieletric substance; a directional sensor having; an antenna comprising at least one array of at least two antenna elements, the antenna elements being ultra-wide band antenna elements, the antenna being mounted to the tank and adapted to emit a signal comprising radiated electromagnetic energy toward the at least one dielectric substance and along a signal path, the antenna being further adapted to detect a signal after propagation thereof along the signal path; an antenna controller being operatively coupled to the antenna, the antenna controller being adapted to drive the emitted signal based on emission data, adapted to detect the detected signal and to generate detection data indicative of the detected signal; and a computing device operatively coupled to the antenna controller, the computing device being configured to determine the parameter. Methods and apparatus for evaluating properties of layered substances in tanks are disclosed. In particular, such properties can include a layer thickness of a first substance, a layer thickness of a second substance and also one or more dielectric properties of the substances in a multilayer system. The methods and apparatus involve the transmission of radiated electromagnetic energy toward the multilayer system and the detection of radiated electromagnetic energy reflected from the multilayer system to evaluate one or more properties of the layered substances. 1. A sensing system for measuring a parameter of at least one dielectric substance , the sensing system comprising:a tank for containing the at least one dielectric substance; an antenna comprising at least one array of at least two antenna elements, the antenna elements being ultra-wide band antenna elements, the antenna being mounted to the tank and adapted to emit a signal comprising radiated electromagnetic energy toward the at least one dielectric ...

METHOD FOR INSPECTING MEMBRANE ELECTRODE STRUCTURE

A method for inspecting a membrane electrode structure () which includes a first step in which detection medium capable of detecting elements of a first electrode catalyst layer () and a second electrode catalyst layer () and an element of a metal foreign matter () is sent along a thickness direction from the side of a first electrode layer () to a second electrode layer () side to obtain a thickness direction profile of a detection signal, and a second step in which an analysis unit identifies a thickness direction position of the metal foreign matter (), from intensity of the detection signal in the thickness direction profile, and in which the analysis unit identifies thickness direction positions of the first and second electrode catalyst layer ()(), or a thickness direction position of an electrolyte membrane (), from the intensity of the detection signal in the thickness direction profile. 1. A method for inspecting a membrane electrode structure formed by sandwiching an electrolyte membrane between a first electrode layer comprising a first electrode catalyst layer and a first gas diffusion layer , and a second electrode layer comprising a second electrode catalyst layer and a second gas diffusion layer , the method comprising:a first step in which a detection medium capable of detecting elements of the first electrode catalyst layer and the second electrode catalyst layer or an element of the electrolyte membrane, and an element of a metal foreign matter is sent such that a focal point is moved along a thickness direction from a side of the first electrode layer to a side of the second electrode layer, thereby obtaining a thickness direction profile of a detection signal; anda second step in which an analysis unit identifies a thickness direction position of the metal foreign matter, from intensity of the detection signal in the thickness direction profile, and in which the analysis unit identifies thickness direction positions of the first electrode ...

ANALYSIS OF ANTIMICROBIAL COATINGS USING XRF

A method of quantifying an antimicrobial coatings using a handheld XRF analyzer is disclosed. The method provides an estimate of the expected level of antimicrobial efficacy for a thin film comprising silicon and/or titanium by obtaining a Si or Ti peak intensity using XRF spectroscopy and converting the obtained Si or Ti peak intensity to the expected level of efficacy using a calibration curve. A properly calibrated handheld XRF analyzer allows a user to assess the viability of antimicrobial coatings in the field, such as in a hospital where various fomites may be coated with silane and/or titanium compositions. 1. A method of estimating an expected level of residual antimicrobial efficacy for an antimicrobial coating comprising an organosilane having a quaternary ammonium chloride substituent , the method comprising:{'sub': '17', 'obtaining Cl photon counts from the antimicrobial coating using XRF spectroscopy; and'}{'sub': '17', 'converting the obtained Cl photon counts to the expected level of residual antimicrobial efficacy using a calibration curve.'}2. The method of claim 1 , wherein the organosilane having a quaternary ammonium chloride substituent is selected from the group consisting of 3-(trimethoxysilyl) propyl dimethyl octadecyl ammonium chloride claim 1 , 3-(trihydroxysilyl) propyl dimethyl octadecyl ammonium chloride claim 1 , homopolymers therefrom claim 1 , and mixtures thereof.3. The method of claim 1 , wherein the antimicrobial coating further comprises at least one of 3-chloropropyltrimethoxysilane claim 1 , 3-thioropropyltriethoxysilane claim 1 , 3-chloropropylsilanetriol claim 1 , 3-aminopropyltrimethoxysilane claim 1 , 3-aminopropyltdethoxysilane claim 1 , or 3-aminopropylsilanetriol.4. The method of claim 1 , wherein the antimicrobial coating further comprises an organic amine.5. The method of claim 1 , wherein the step of obtaining the Cl photon counts comprises irradiation of the antimicrobial coating with X-rays emanating from a handheld ...

Method And Device For Detecting Of Illegal Hiding Places In Iron Ore Load

A method and device construction for detecting of hiding places with smuggled materials in the extremely heavy railway loads transporting iron ore by the means of neutron beam are disclosed. Upon the scanning of the iron ore load with neutrons the searched cavities or leaden containers with contraband are expressed by reducing of the flow of passing neutrons. The outline width of the scanned load is measured by dimension detectors. Values of differences between the scanned widths of the load and the outline widths are measures of the cavity dimensions with smuggled materials and said measures are included into the neutron radiographic image. 1. Method for detecting of illegal hiding places in an iron ore load , characterized in that:{'b': 6', '1, 'an iron ore load () is irradiated from the upper position with a scanning beam of neutron radiation emitted from a neutron generator () with energy from 14 MeV to 17 MeV,'}{'b': 7', '6', '6, 'a set of neutron detectors () positioned at the ground level across the width of the wagon with the iron ore load () measures the value of the neutron flow density reduction after passing of the neutrons through the scanned layer of iron ore load (),'}{'b': '6', 'a true width of the scanned iron ore load () is determined on the basis of the measured value of the neutron flow density reduction,'}{'b': 8', '11', '6, 'a set of distance detectors () positioned over the wagon measures the apparent outline layer width () at a site of the iron ore load () under the scanning beam of neutron radiation,'}{'b': 11', '6', '6', '9, 'statistic difference between the values of the apparent outline layer width () of the scanned iron ore load () and the real width of the scanned iron ore load () indicates the presence of a cavity (),'}{'b': '6', 'differences between the apparent thickness and real thickness along the area of the scanned surface of the iron ore load () are displayed as neutron radiographic imaging.'}215. A method for detecting of ...

Thickness and convexity detection device for plate strip

The invention relates to a device for detecting the thickness and crown of plates and strips, belonging to the field of nuclear technology applications. The device comprises a C-frame; two ray source mounted in an upper arm of the C-frame and distributed at an interval along the width direction of a steel plate/strip; two rows of gas-pressurized ionization chamber detector arrays mounted in a lower arm of the C-frame and distributed at an interval along the moving direction of the plate/strip; collimators mounted below the two ray source, the collimators enabling the rays of each ray source to only irradiate to a corresponding row of detectors; pre-amplifier modules connected with the detector arrays; a data collector connected with the pre-amplifier modules; a data processing and displaying computer connected with the data collector; and a cooling water and pressurized air service system and a control system for ensuring system operation and monitoring. The device of the invention is simple in structure and high in dynamic measurement accuracy, and the detectors have the advantages of small temperature drift, irradiation resistance, high spatial resolution, high cost performance and the like.

METHOD FOR INSPECTING WELD PENETRATION DEPTH

In a butt-welded joint structure in which the entire peripheral edge or both end sides of the abutting surface are welded, first and second cutouts for determining insufficient penetration and determining excessive penetration are formed. After butt welding, ultrasound is beamed onto each of the first and second cutouts of the joint structure and the reflected wave is measured. The acceptability of the weld penetration depth is thus determined on the basis of both of the reflected waves. This determination is performed on the entire peripheral edge portion or both end side portions of the butted face between the welded materials, and the acceptability of the weld penetration depth of the corresponding portions is inspected. 1. A method for inspecting a weld penetration depth , characterized in thatafter performing butt welding of both end portions or an entire peripheral end portion of abutting surface between workpieces including a joint structure that includes, in each of the both end portions or the entire peripheral end portion of the abutting surface between the workpieces, a cutout that reflects ultrasonic waves in a case where a weld has not penetrated therein, the cutout including a first cutout that is used to determine insufficient weld penetration and a second cutout that is used to determine excessive weld penetration,performing, on the both end portions or the entire peripheral end portion of the abutting surface between the workpieces, a first step of emitting ultrasonic waves toward the first cutout or the second cutout of the joint structure and measuring reflected waves thereof, a second step of emitting the ultrasonic waves toward the second cutout or the first cutout of the joint structure and measuring reflected waves thereof, and a third step of determining whether the weld penetration depth is satisfactory or not based on the reflected waves measured in the first step and the second step, and thus inspecting whether the weld penetration depth ...

MATERIAL EROSION MONITORING SYSTEM AND METHOD

Disclosed is an improved system and method to evaluate the status of a material. The system and method are operative to identify flaws and measure the erosion profile and thickness of different materials, including refractory materials, using electromagnetic waves. The system is designed to reduce a plurality of reflections, associated with the propagation of electromagnetic waves launched into the material under evaluation, by a sufficient extent so as to enable detection of electromagnetic waves of interest reflected from remote discontinuities of the material. Furthermore, the system and method utilize a configuration and signal processing techniques that reduce clutter and enable the isolation of electromagnetic waves of interest. Moreover, the launcher is impedance matched to the material under evaluation, and the feeding mechanism is designed to mitigate multiple reflection effects to further suppress clutter. 1. A system for evaluating a status of a material , comprising:a. an electromagnetic wave launcher having a first feeding end and a second launching end, wherein said first feeding end includes a feeding mechanism to excite an electromagnetic wave able to propagate through said electromagnetic wave launcher, wherein said second launching end is physically structured to reduce a plurality of reflections and probe ringing of said electromagnetic wave propagating through said launching end, by a sufficient extent so as to enable detection of an electromagnetic wave of interest reflected from a remote discontinuity of said material, wherein said electromagnetic wave launcher is provided a physical configuration to have an impedance at said second launching end that substantially matches an impedance of a near surface of said material, wherein said electromagnetic wave launcher is adapted to enable receipt of said electromagnetic wave of interest reflected from said remote discontinuity of said material within a time period sufficient to distinguish between ...

X-RAY INSPECTING DEVICE, X-RAY THIN FILM INSPECTING METHOD, AND METHOD FOR MEASURING ROCKING CURVE

In an X-ray inspection device according to the present invention, an X-ray irradiation unit includes a first X-ray optical element for focusing characteristic X-rays in a vertical direction, and a second X-ray optical element for focusing the characteristic X-rays in a horizontal direction. The first X-ray optical element is constituted by a crystal material having high crystallinity. The second X-ray optical element includes a multilayer mirror. 1. An X-ray inspecting device comprising:a sample stage on which an inspection target sample is placed;image observing means for observing an image of the sample placed on the sample stage;a positioning mechanism that is controlled based on an image observation result of the sample by the image observing means to move the sample stage in two orthogonal directions on a horizontal plane, a height direction, and an in-plane rotation direction;a goniometer including first and second rotation members that rotate independently of each other along a virtual plane perpendicular to a surface of the sample around a rotational axis contained in the same plane as the surface of the sample placed on the sample stage,an X-ray irradiation unit that is installed in the first rotation member and focuses and irradiates characteristic X-rays to an inspection position set in the same plane as the surface of the sample placed on the sample stage; andan X-ray detector installed in the second rotation member, wherein the X-ray irradiation unit includes an X-ray tube for generating X-rays, and an X-ray optical element for receiving X-rays irradiated from the X-ray tube, extracting only characteristic X-rays of a specific wavelength and focusing the extracted characteristic X-rays on the inspection position, and the X-ray optical element includes a first X-ray optical element for focusing the characteristic X-rays so that a height of the characteristic X-rays decreases within a virtual vertical plane orthogonal to the surface of the sample and ...

X-RAY SURFACE ANALYSIS AND MEASUREMENT APPARATUS

This disclosure presents systems for total reflection x-ray fluorescence measurements that have x-ray flux and x-ray flux density several orders of magnitude greater than existing x-ray technologies. These may therefore useful for applications such as trace element detection and/or for total-reflection fluorescence analysis. 1. An x-ray system for analyzing a sample , comprising:at least one x-ray source comprising plurality of sub-sources, in whichat least one sub-source has a source size less than 20 micrometers in at least one direction,aligned along at least one predetermined axisso that x-rays generated from all or some of the sub-sources accumulate along the predetermined axis; 'and condition and create an x-ray beam with predetermined properties;', 'an x-ray optical system aligned with the predetermined axis to collect the x-rays from the x-ray source'}a means to direct the x-ray beam incident with a low grazing angle to an area of a surface of a sample to induce fluorescent x-raysfrom the element(s) of the sample;at least one detectorwhich detects the intensity of the fluorescent x-rays and generates electrical signals; anda signal processor to analyze the electrical signals to obtain information about at least one of:composition, concentration, quantity, and film thickness.2. The x-ray system of claim 1 , comprising additional detectors to detect x-rays reflected from the surface of the material generating fluorescent x-rays.3. An x-ray measurement system claim 1 , comprising:an x-ray source, comprising:at least one electron beam emitter; and a substrate comprising a first selected material; and', 'a plurality of discrete structures comprising a second material selected for its x-ray generation properties;', 'in which each of the plurality of discrete structures is in thermal contact with the substrate; and', 'has at least one dimension of less than 20 microns;', 'in which at least one of the discrete structures'}, 'an optical train to collect x-rays ...

INSPECTING METHOD AND INSPECTION APPARATUS FOR MEMBRANEELECTRODE ASSEMBLY

A method of inspecting a membrane-electrode assembly includes obtaining an X-ray transmission image by applying X-rays to the membrane-electrode assembly, and determining whether a foreign matter having a size equal to or larger than a predetermined value is included in the membrane-electrode assembly, according to a brightness reduction amount in each pixel of the X-ray transmission image obtained, while referring to a correlative relationship between the size of the foreign matter measured in a planar direction of the membrane-electrode assembly, and the brightness reduction amount in the X-ray transmission image. 1. A method of inspecting a membrane-electrode assembly , comprising:obtaining an X-ray transmission image by applying X-rays to the membrane-electrode assembly; anddetermining whether a foreign matter having a size equal to or larger than a predetermined value is included in the membrane-electrode assembly, according to a brightness reduction amount in each of pixels of the X-ray transmission image obtained, while referring to a correlative relationship between the size of the foreign matter measured in a planar direction of the membrane-electrode assembly, and the brightness reduction amount in the X-ray transmission image.2. The method according to claim 1 , further comprising:preparing a plurality of foreign matter samples having different sizes measured in the planar direction;obtaining the brightness reduction amount corresponding to each of the foreign matter samples, from the X-ray transmission image of each of the foreign matter samples; andobtaining the correlative relationship in advance, from the brightness reduction amount obtained, and the size of each of the foreign matter samples.3. A method of inspecting a membrane-electrode assembly claim 1 , comprising:obtaining an X-ray transmission image by applying X-rays to the membrane-electrode assembly;obtaining a thickness of a foreign matter measured in a thickness direction of the membrane- ...

ENERGY SUBTRACTION PROCESSING APPARATUS, METHOD, AND PROGRAM

In an energy subtraction processing apparatus, method, and a non-transitory computer readable recording medium storing program, a high-quality image is generated by acquiring an absorption coefficient suitable for a subject. A subject information acquisition unit acquires the thickness information of a breast and a mammary gland content rate, as subject information, based on a low voltage image acquired by energy subtraction imaging. An absorption coefficient acquisition unit acquires an absorption coefficient corresponding to the subject information with reference to the relationship between the thickness of the breast and the X-ray absorption coefficient, which is calculated in advance. Based on the absorption coefficient acquired by the absorption coefficient acquisition unit, a weighting coefficient calculation unit calculates a weighting coefficient at the time of performing energy subtraction processing. A subtraction unit performs subtraction processing using the weighting coefficient calculated by the weighting coefficient calculation unit. 1. An energy subtraction processing apparatus , comprising:an image acquisition unit that acquires two radiographic images with radiations transmitted through a subject and having different energy distributions;a subject information acquisition unit that acquires subject information including thickness information of the subject based on at least one of the two radiographic images;an absorption coefficient acquisition unit that acquires an absorption coefficient corresponding to the subject information with reference to a relationship between a thickness of the subject and an absorption coefficient of the radiation, which is calculated in advance according to the energy distribution and a substance forming the subject;an weighting coefficient calculation unit that calculates, based on the acquired absorption coefficient, a weighting coefficient in a case of performing weighting subtraction between corresponding pixels of ...

INSPECTION APPARATUS, INSPECTION METHOD, COMPUTER PROGRAM AND RECORDING MEDIUM

An inspection apparatus is provided with: an irradiating device configured to irradiate a sample in which a plurality of layers are laminated with a terahertz wave; a detecting device configured to detect the terahertz wave from the sample to obtain a detected waveform; and an estimating device configured to estimate a position of a first boundary surface on the basis of a second boundary surface pulse wave and a library, the second boundary surface pulse wave appearing in the detected waveform to correspond to a second boundary surface that is farther from an outer surface than the first boundary surface, the library representing an estimated waveform of the terahertz wave from the sample. 1. An inspection apparatus comprising:an irradiator that is configured to irradiate an outer surface of a sample in which a plurality of layers are laminated with a terahertz wave;a detector that is configured to detect the terahertz wave from the sample to obtain a detected waveform; anda controller that is programmed to estimate a position of a first boundary surface of the plurality of layers on the basis of a second boundary surface pulse wave and a library without using a first boundary surface pulse wave corresponding to the first boundary surface, the second boundary surface pulse wave appearing in the detected waveform to correspond to a second boundary surface of the plurality of layers, the second boundary surface being farther from the outer surface than the first boundary surface, the library indicating an estimated waveform of the terahertz wave from the sample.2. (canceled)3. (canceled)4. The inspection apparatus according to claim 1 , whereinthe sample includes a plurality of second boundary surfaces,the controller is programmed to estimate the position of the first boundary surface on the basis of one second boundary surface pulse wave of a plurality of second boundary surface pulse waves, the one second boundary surface pulse wave corresponds to one second ...

X-RAY IMAGING METHOD AND SYSTEM THEREOF

An X-ray imaging method includes the following steps: (a) performing a first object imaging and obtaining a first object intensity signal by detecting an X-ray passing through a first object; (b) performing baseline imaging process, obtaining a baseline intensity signal by detecting the X-ray when the first object is not in a FOV; and; (c) obtaining the first thickness of the first object by performing operations on the first object intensity signal, the baseline intensity signal, and the first attenuation coefficient of the first object. 1. An X-ray imaging method , comprising:(a) performing a first object imaging process to obtain a first object intensity signal by detecting a plurality of X-rays of a X-ray source passing through a first object in an field of view (FOV);(b) performing a baseline imaging process to obtain a baseline intensity signal by detecting the X-rays when the first object is not in the FOV; and;(c) obtaining a first thickness of the first object based on the first object intensity signal, the baseline intensity signal, and a first attenuation coefficient of the first object.2. The X-ray imaging method of claim 1 , wherein obtaining the first thickness in step (c) further comprises:(c-1) calculating an X-ray energy spectrum of the baseline intensity signal and the first attenuation coefficient to obtain a first thickness characteristic curve; and(c-2) obtaining the first thickness based on the first thickness characteristic curve and the first object intensity signal.4. The X-ray imaging method of claim 1 , further comprising a plurality of steps:(d) performing a second object imaging process to obtain a second object intensity signal by detecting the X-rays passing through a second object in the FOV; and(e) obtaining a second thickness of the second object based on the second object intensity signal, the baseline intensity signal, and a second attenuation coefficient of the second object.5. The X-ray imaging method of claim 4 , wherein ...

Method of inspecting a degraded area of a metal structure covered by a composite repair and method of measuring a remaining wall thickness of a composite structure

The method of inspecting a degraded area of a metal structure covered by a composite repair generally comprises operating a Compton scattering inspection device onto the degraded area, including emitting a beam of radiation particles directed towards and across the composite repair, detecting at least some backscattered photons scattered back from the metal structure, and acquiring Compton scattering data from the detected backscattered photons, the Compton scattering data being indicative of remaining wall thickness of the degraded area.

METHOD OF DETECTING FLOW LINE DEPOSITS USING GAMMA RAY DENSITOMETRY

A method of measuring a flow line deposit comprising: providing a pipe comprising the flow line deposit; measuring unattenuated photon counts across the pipe; and analyzing the measured unattenuated photon counts to determine the thickness of the flow line deposit and associated systems. 1. A method of measuring a flow line deposit comprising:providing a pipe comprising the flow line deposit;measuring unattenuated photon counts across the pipe;partitioning the measured unattenuated photon counts; andcalculating the thickness of the flow line deposit based on the partitioned measured unattenuated photon counts.2. The method of claim 1 , wherein measuring unattenuated photon counts across the pipe comprises using a single-source or multiple-source gamma ray device to measure the unattenuated photon counts.3. The method of claim 1 , wherein partitioning the measured unattenuated photon counts comprises partitioning the unattenuated photon counts using slug-unit synchronization.4. The method of claim 1 , wherein partitioning the measured unattenuated photon counts comprises partitioning the unattenuated photon counts based on instantaneous multiphase flow characteristics within the pipe.5. The method of claim 1 , further comprising determining signature elements of a slug unit within the pipe.6. The method of claim 1 , further comprising time tagging characteristic elements of a multiphase flow pattern within the pipe.7. The method of claim 6 , further comprising further comprising partitioning the measured unattenuated photon counts based on time positions between the characteristic elements.8. A method of measuring a flow line deposit of a pipeline with a multiphase flow comprising:providing a pipe comprising the flow line deposit;measuring unattenuated photon counts across the pipe; andanalyzing the measured unattenuated photon counts to determine the thickness of the flow line deposit.9. The method of claim 8 , wherein analyzing the measured unattenuated photon ...

CONVEYOR SYSTEM AND MEASURING DEVICE FOR DETERMINING WATER CONTENT OF A CONSTRUCTION MATERIAL

A system is provided. The system includes a conveyor apparatus configured for conveying a material and a water content measurement system positioned about the conveyor apparatus for determining water content in the material. A dimension characteristic measurement system for detecting one or more dimension characteristics of the material is provided and a computer device is configured to manipulate data received from the water content measurement system and the dimension characteristic measurement system to determine a water content of the material. 1. A system comprising:a conveyor apparatus configured for conveying a material;a water content measurement system positioned about the conveyor apparatus for detecting water content in the material;a dimension characteristic measurement system for detecting one or more dimension characteristics of the material; anda computer device configured to manipulate data received from the water content measurement system and the dimension characteristic measurement system to determine a water content of the material.2. The system according to claim 1 , wherein the water content measurement system and the dimension characteristic measurement system are spaced-apart about the conveyor apparatus to eliminate cross-talk therebetween.3. The system according to claim 1 , wherein the water content measurement system comprises a neutron source spaced-apart from one side of the conveyor apparatus and neutron detector spaced-apart from an opposing side of the conveyor.4. The system according to claim 3 , wherein the neutron source is Cf-252 and the neutron detector is an He-3 neutron detector.5. The system according to claim 1 , wherein the dimension characteristic measurement system is configured to determine one of a height and mass thickness of the material.6. The system according to claim 1 , wherein the dimension characteristic measurement system comprises a gamma-ray source spaced-apart from one side of the conveyor apparatus and a ...

Methods of bandgap analysis and modeling for high k metal gate

Methods of precisely analyzing and modeling band gap energies and electrical properties of a thin film are provided. One method includes: obtaining a substrate and a thin film disposed above the substrate, the thin film including an interfacial layer above the substrate, and a high-k layer above the interfacial layer; determining a thickness of the thin film; analyzing the thin film using deep ultraviolet spectroscopy ellipsometry to determine the photon energy of reflected light; using a model to determine a set of bandgap energies extracted from a set of results of the photon energy of the analyzing step; and determining at least one of: a leakage current from a main bandgap energy, a nitrogen content from a sub bandgap energy, and an equivalent oxide thickness from the nitrogen content and a composition of the interfacial layer.